Power semiconductor module (three-phase bridge)
CN309926793SActive Publication Date: 2026-04-17JIAXING SIDA MICROELECTRONICS CO LTD
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Designs(China)
- Current Assignee / Owner
- JIAXING SIDA MICROELECTRONICS CO LTD
- Filing Date
- 2025-09-23
- Publication Date
- 2026-04-17
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Figure 000007_ABST
Abstract
1. Name of the product in this design: Power Semiconductor Module (Three-Phase Bridge). 2. Purpose of this design: for use in power semiconductor modules. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: 3D view 1.
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