Optoelectronic component and method for manufacturing an optoelectronic component

Abstract

Optoelectronic device (100) comprising a layer stack with an optically active region (212) and an optically inactive region (214), the layer stack comprising: • an organic functional layer structure (112), wherein the organic functional layer structure (112) is applied to or over a support (102) and is configured to receive and / or provide electromagnetic radiation;• an antireflection / getter layer structure arranged in the beam path of the organic functional layer structure (112), comprising: ◯ a getter layer (204, 210, 404) with getter material having a lower mean refractive index than the mean refractive index of the organic functional layer structure (112), wherein the getter layer (204, 210, 404) has a first thickness in the optically active region and a second thickness in the optically inactive region, the second thickness being smaller than the first thickness, and wherein the getter layer (204, 210, 404) at least partially surrounds the organic functional layer structure (112) laterally;and◯ an antireflective layer (128, 502), wherein material of the antireflective layer is arranged at least partially between the organic functional layer structure (112) and the getter layer (204, 210, 404) in the beam path of the organic functional layer structure (112), and wherein the material of the antireflective layer (128, 502) arranged between the organic functional layer structure (112) and the getter layer (204, 210, 404) has an average refractive index greater than the refractive index of the getter material and / or has at least one scattering additive material distributed in a matrix of the antireflective layer (128, 502), wherein the getter layer (204, 210, 404) at least partially surrounds the antireflective layer (128, 502) laterally.

Description

In various embodiments, an optoelectronic component and a method for producing an optoelectronic component are provided.The following publications describe an optoelectronic component: US 2004 / 0 080 264 A1, US 2011 / 0 171 764 A1, US 2005 / 0 194 896 A1, US 2003 / 0 038 590 A1.Optoelectronic components based on organic light, for example an organic light emitting diode (OLED) or an organic solar cell, are increasingly widely used.An OLED may have two electrodes, for example two contact metallization configured as an anode and a cathode, with an organic functional layer system in between. The organic functional layer system may have one or more emitter layer / s in which electromagnetic radiation is generated, for example, one or more charge carrier pair generation layer structures comprising in each case two or more charge generating layer(s) for charge carrier pair generation, and one or more electron blocking layers, also referred to as hole transport layer(s) (HTL), and one or more hole blocking layers, also referred to as electron transport layer(s) (ETL), in order to direct the current flow.The organic functional layer system or at least a part thereof can comprise organic substances and / or organic substance mixtures. Organic materials and / or organic material mixtures may, however, be susceptible to harmful environmental influences. A harmful environmental influence can be understood to mean all influences which can potentially lead to degradation or aging, for example crosslinking or crystallization, of organic substances and / or organic substance mixtures and can thus limit the operating time of the OLED, for example. A harmful environmental influence can be, for example, a substance harmful to organic substances or organic substance mixtures, for example oxygen and / or water.In order to protect the organic functional layer system and the electrodes from harmful environmental influences, the organic, electronic component is encapsulated. When encapsulating an OLED, for example, the organic functional layer structure and the electrodes are surrounded by an encapsulation layer which is impermeable to harmful environmental influences, for example a thin film which is impermeable to water and oxygen (illustrated in FIG. 6 ).FIG. 6 shows different embodiments of a conventional optoelectronic component.A first electrode 604 is formed on a carrier 602. An organic functional layer structure 606 is formed on the first electrode 604. A second electrode 608 is formed on the organic functional layer structure 606. An encapsulation layer 610, 612 is formed on the second electrode 608. This type of encapsulation is also referred to as thin-film encapsulation.The encapsulation layer 610, 612 is formed such that the encapsulation layer 610, 612 together with the carrier 602 completely surrounds the first electrode 604, the organic functional layer structure 606 and the second electrode 608-illustrated in FIG. 6 a.In a further conventional optoelectronic component-illustrated in FIG. 6 b-the encapsulation layer 610, 612 may be structured-illustrated as encapsulation layer 610.In conventional optoelectronic components, the ambient humidity is in direct, full-area contact with the encapsulation layer 610-correspondingly high requirements are therefore placed on this encapsulation layer 610.The encapsulation layer for thin-film-encapsulated organic light-emitting diodes should be absolutely defect-free. During encapsulation, however, it cannot be completely ruled out that defects are still present in the encapsulation layer.Even a microscopic defect or a diffusion channel along a grain boundary in this encapsulation layer may lead to a defect of the entire OLED, for example. As a result, in the field of view of the OLED, non-luminous, circular points (black spot) can form by means of the action of moisture, which can grow over the course of time.In order to keep the potential damage for an OLED small, a glass cover is applied to the encapsulation layer of a rigid optoelectronic component in a conventional method.In another conventional method, a glass cover can be applied to the encapsulation layer, for example by means of a frit connection (glass frit bonding / glass soldering / seal glass bonding) by means of a conventional glass solder in the geometrical edge regions.In another conventional method, the glass cover may be laminated by means of a laminating adhesive. The glass cover can be configured as a cavity glass and can be adhesively bonded, for example laminated, onto the OLED. The adhesive connection is formed in the geometric edge of the OLED. However, the glass cover can only reduce the speed at which, for example, water diffuses into the OLED. Water can still diffuse, for example, through the laminating adhesive into the organic functional layer structure, so that, for example, a defect in the encapsulation layer of an OLED leads to a visible defect only with a slow deceleration.In a conventional method, a layer (getter layer) of a water-absorbing material (getter) is set up in the cavity of the cavity glass. By means of the getter, the moisture, i.e. the water, which penetrates through the adhesive edge can be bound. However, a getter layer in the beam path of an optoelectronic component, for example in the light path, may impair the overall aesthetic appearance of the optoelectronic component and lead to a reduction in the proportion of electromagnetic radiation that can be picked up or provided by the optoelectronic component.In various embodiments, an optoelectronic component and a method for producing an optoelectronic component are provided, with which it is possible to increase the proportion of electromagnetic radiation that can be absorbed or provided by the optoelectronic component with a getter layer.In the context of this description, an organic substance can be understood to mean a compound of carbon which, irrespective of the respective state of aggregation, is present in chemically uniform form and is characterized by characteristic physical and chemical properties. Furthermore, in the context of this description, an inorganic substance can be understood to mean a compound which is present in chemically uniform form, irrespective of the respective state of aggregation, is characterized by characteristic physical and chemical properties and is not carbon or is a simple carbon compound. In the context of this description, an organic-inorganic substance (hybrid substance) can be understood to mean a compound, irrespective of the respective state of aggregation, present in chemically uniform form and characterized by characteristic physical and chemical properties, with connecting parts which contain carbon and are free of carbon. In the context of this description, the term "substance" comprises all the substances mentioned above, for example an organic substance, an inorganic substance, and / or a hybrid substance. Furthermore, in the context of this description, a substance mixture can be understood to mean what constituents consist of two or more different substances, the constituents of which are very finely distributed, for example. A substance class is understood to mean a substance or a substance mixture of one or more organic substance(s), one or more inorganic substance(s) or one or more hybrid substance(s). The term "material" can be used interchangeably with the term "substance".In the context of this description, a first substance or a first substance mixture can be the same as a second substance or a second substance mixture if the chemical and physical properties of the first substance or first substance mixture are identical to the chemical and physical properties of the second substance or of the second substance mixture.In the context of this description, a first substance or a first substance mixture can be similar to a second substance or a second substance mixture if the first substance or the first substance mixture and the second substance or the second substance mixture have an approximately identical stoichiometric composition, approximately identical chemical properties and / or approximately identical physical properties with respect to at least one size, for example the density, the refractive index, the chemical resistance or the like.For example, regarding the stoichiometric composition, crystalline SiO2(quartz) can be considered to be the same as amorphous SiO2(silica glass) and similar to SiO X. However, as for the refractive index, crystalline SiO 2 may be different from SiO X or amorphous SiO 2. By adding additives, for example in the form of dopants, amorphous SiO 2 can have the same or a similar refractive index as crystalline SiO 2, but then be different from crystalline SiO2in terms of chemical composition and / or chemical resistance.The reference variable in which a first substance resembles a second substance can be explicitly specified or can result from the context, for example from the common properties of a group of substances or substance mixtures.In the context of this description, a dye can be understood to be a chemical compound or a pigment which can dye other substances or substance mixtures, i.e. changes the external appearance of the substance or of the substance mixture.The term "coloring" can also be understood to mean "color-changing" by means of a dye, it being possible to color-change the external color of a substance without coloring the substance, for example similar to a color filter. In other words, "color changing" of a fabric may not always have "coloring" of the fabric.In various configurations, a dye may comprise or be formed from an organic substance from one of the following organic dye classes: acridine, acridone, anthraquino, anthracene, cyanine, dansyl, squallium, spiropyrans, boron dipyrromanes (BODIPY), perylenes, pyrenes, naphthalenes, flavines, pyrroles, porphrines and their metal complexes, diarylmethane, triarylmethane, nitro, nitroso, phthalocyanine and their metal complexes, quinones, azo, indophenol, oxazines, oxazone, thiazines, thiazoles, xanthenes, fluorenes, flurones, pyroins, rhodamines, Coumarins, metallocenes.In various embodiments, a dye may comprise or be formed from an inorganic substance from one of the following inorganic dye class, inorganic dye derivatives or inorganic dye pigments: transition metals, rare earth oxides, sulfides, cyanides, iron oxides, zirconium silicates, bismuth vanadate, chromium oxides.In various configurations, a dye may comprise nanoparticles or be formed therefrom, for example carbon, for example carbon black; gold, silver, platinum.In the context of this description, a substance can be understood as a phosphor which converts lossy electromagnetic radiation of one wavelength into electromagnetic radiation of another wavelength, for example longer wavelength (Stokes shift) or shorter wavelength (anti-Stokes shift), for example by means of phosphorescence or fluorescence. The energy difference of absorbed electromagnetic radiation and emitted electromagnetic radiation can be converted into phonons, i.e. heat, and / or by emitting electromagnetic radiation having a wavelength as a function of the energy difference.In various embodiments, a phosphor may include, for example, Ce 3+ doped garnets such as YAG:Ce and LuAG, for example (Y, Lu) 3( Al, Ga) 5 O 12: Ce 3+; Eu 2+ doped nitrides, for example CaAlSiN 3: Eu 2+, ( Ba,Sr) 2 Si 5 N8:Eu2+; Eu 2+ doped sulfides, SIONe, SiAlON, orthosilicates, for example (Ba,Sr,Ca) 2 SiO 4: Eu 2+; chlorosilicates, chlorophosphates, BAM (barium magnesium aluminate:Eu) and / or SCAP, halophosphate or can be formed therefrom.Within the scope of this description, a UV-absorbing additional material can reduce the transmission for electromagnetic radiation with a wavelength of less than approximately 400 nm at least in a wavelength range.The lower UV transmission can be formed, for example, by means of a higher absorption and / or reflection and / or scattering of UV radiation by means of the UV-absorbing additional material.In various configurations, a UV-absorbing additive material may comprise or be formed from a substance, a substance mixture or a stoichiometric compound from the group of the substances: TiO 2, CeO 2, Bi 2 O 3, ZnO, SnO 2, a phosphor, UV-absorbing glass particles and / or suitable UV-absorbing metallic nanoparticles, wherein the phosphor, the glass particles and / or the nanoparticles have an absorption of electromagnetic radiation in the UV range.In various configurations, the UV-absorbing nanoparticles can have, for example, no solubility or a low solubility in a molten glass solder and / or do not react with it or react only poorly with it.In various configurations, the nanoparticles can lead to no or only a slight scattering of electromagnetic radiation, for example nanoparticles which have a grain size of less than approximately 50 nm, for example made of TiO 2, CeO 2, ZnO or Bi 2 O 3.A dimensionally stable substance can become plastically formable, i.e. liquefied, by adding plasticizers, for example solvents, or increasing the temperature.A plastically formable substance can become dimensionally stable, i.e. be consolidated, by means of a crosslinking reaction, removal of plasticizers and / or heat.The solidification of a substance or substance mixture, i.e. the transition of a substance from formable to dimensionally stable, can comprise a change in the viscosity, for example an increase in the viscosity from a first viscosity value to a second viscosity value. The second viscosity value may be many times greater than the first viscosity value, for example in a range from about 10 to about 10 6. The fabric may be moldable at the first viscosity and dimensionally stable at the second viscosity.The solidification of a substance or substance mixture, i.e. the transition of a substance from formable to dimensionally stable, can have a method or a process in which low molecular weight constituents are removed from the substance or substance mixture, for example solvent molecules or low molecular weight, uncrosslinked constituents of the substance or of the substance mixture, for example drying or chemical crosslinking of the substance or of the substance mixture. The substance or the substance mixture can have, for example, a higher concentration of low molecular mass substances on the entire substance or substance mixture in the moldable state than in the dimensionally stable state.However, a body made of a dimensionally stable substance or substance mixture can be formable, for example if the body is configured as a film, for example a plastic film, a glass film or a metal film. Such a body can be referred to as mechanically flexible, for example, since changes in the geometric shape of the body, for example bending a film, can be reversible. A mechanically flexible body, for example a film, can however also be plastically deformable, for example by the mechanically flexible body being consolidated after the deformation, for example a deep-drawing of a plastic film.The connection of a first body to a second body can be positive locking, non-positive locking and / or materially integral. The connections can be designed to be releasable, i.e. reversible. In various embodiments, a reversible, positive connection can be realized, for example, as a screw connection, a hook and loop connection, a clamping / use of clamps.However, the connections can also be designed to be non-releasable, i.e. irreversible. A non-detachable connection can only be separated by destroying the connecting means. In various embodiments, an irreversible, positive connection can be realized, for example, as a rivet connection, an adhesive connection or a soldered connection.In the case of a cohesive connection, the first body can be connected to the second body by means of atomic and / or molecular forces. Material connections can frequently be non-releasable connections. In various embodiments, a cohesive connection can be realized, for example, as an adhesive connection, a solder connection, for example, of a glass solder, or of a metalot, a welded connection.Within the scope of this description, electrical contacting of an electrical component or an electrical region of the electrical component, for example an electronic component, for example an optoelectronic component, can be understood, for example, as including the optoelectronic component in an electrical circuit, wherein the circuit can be electrically closed, for example, by means of the electrical contacting of the electronic component.Within the scope of this description, an electronic component can be understood to mean a component which relates to the control, regulation or amplification of an electrical current, for example by using semiconductor components. An electronic component can comprise a component from the group of components: for example a diode, a transistor, a thermogenerator, an integrated circuit, a thyristor.Within the scope of this description, an electrically contacted, electronic component can be understood as an embodiment of an electrical component.Within the scope of this description, an optoelectronic component can be understood to mean an embodiment of an electronic component, wherein the optoelectronic component has an optically active region.Within the scope of this description, an optically active region of an optoelectronic component can be understood to mean the region of an optoelectronic component which can absorb electromagnetic radiation and form a photocurrent therefrom or can emit electromagnetic radiation by means of an applied voltage to the optically active region.Within the scope of this description, providing electromagnetic radiation can be understood to mean emitting electromagnetic radiation.Within the scope of this description, recording electromagnetic radiation can be understood to mean absorbing electromagnetic radiation.An optoelectronic component which has two planar, optically active sides can be transparent, for example, as a transparent organic light emitting diode.However, the optically active region can also have a planar, optically active side and a planar, optically inactive side, for example an organic light-emitting diode which is configured as a top emitter or bottom emitter.In various configurations, a component emitting electromagnetic radiation can be, for example, a semiconductor component emitting electromagnetic radiation and / or can be embodied as a diode emitting electromagnetic radiation, as a diode emitting organic electromagnetic radiation, as a transistor emitting electromagnetic radiation or as a transistor emitting organic electromagnetic radiation. The radiation can be, for example, light in the visible range, UV light and / or infrared light. In this context, the electromagnetic radiation-emitting component can be configured, for example, as a light-emitting diode (LED), as an organic light-emitting diode (OLED), as a light-emitting transistor or as an organic light-emitting transistor. In various configurations, the light-emitting component can be part of an integrated circuit. Furthermore, a plurality of light-emitting components can be provided, for example accommodated in a common housing.Within the scope of this description, an organic optoelectronic component in various configurations, for example as an organic light emitting diode (OLED), an organic photovoltaic system, for example an organic solar cell; can have or be formed from an organic substance or an organic substance mixture in the organic functional layer system, which is / is configured, for example, for providing electromagnetic radiation from a provided electrical current or for providing an electrical current from a provided electromagnetic radiation.Within the scope of this description, a harmful environmental influence can be understood to mean all influences which can potentially lead, for example, to degradation, cross-linking, and / or crystallization of the organic substance or of the organic substance mixture and can thus limit the operating duration of organic components, for example.A harmful environmental influence can be, for example, a substance harmful to organic substances or organic substance mixtures, for example oxygen and / or, for example, a solvent, for example water.A harmful environmental influence can be, for example, an environment harmful to organic substances or organic substance mixtures, for example a change above or below a critical value, for example the temperature and / or a change in the ambient pressure.In the context of this description, a diffusion channel in a layer can be understood as a cavity in the layer having at least two openings, for example a hole, a pore, a connection (interconnect) or the like. A substance or substance mixture can migrate or diffuse through the diffusion channel from one opening of the diffusion channel to the at least one second opening of the diffusion channel, for example by means of an osmotic pressure or electrophoretically. A diffusion channel can be formed in the layer, for example, in such a way that different sides of the layer are connected to one another (interconnect) by the diffusion channel. A diffusion channel may have a diameter in a range from about the diameter of a water molecule to about a few nm, for example. A diffusion channel in a layer may be, for example, defects, grain boundaries or the like in the layer or may be formed thereby.Within the scope of this description, a getter layer can comprise a getter or be formed therefrom. A getter layer comprising a getter may comprise, for example, a getter in the form of particles dispersed and / or dissolved in a matrix.In the context of this description, a "getter" can comprise a substance or a substance mixture which absorbs harmful substances and / or harmful substance mixtures, for example oxygen or water of the atmospheric humidity. However, a getter can also be distributed in a matrix, for example in the form of particles or dissolved, and, by means of the absorption of harmful substances or harmful substance mixtures, the substance or substance mixture of the matrix additionally has oxygen-repellent and / or moisture-repellent properties.In the context of this description, a "getter" may comprise a substance or a substance mixture which absorbs harmful substances and / or harmful substance mixtures, for example oxygen or the water of the atmospheric humidity. However, a getter can also be distributed in a matrix, for example in the form of particles or dissolved, and, by means of the absorption of harmful substances or harmful substance mixtures, the substance or substance mixture of the matrix additionally has oxygen-repellent and / or moisture-repellent properties. In various configurations, a getter can have, for example, an oxidizable substance as substance or be formed therefrom. An oxidizable substance can react, for example, with oxygen and / or water and thereby bind these substances. Getters can therefore have, for example, easily oxidizing substances from the chemical group of the alkali metal and / or alkaline earth metals or can be formed therefrom, for example magnesium, calcium, barium, cesium, cobalt, yttrium, lanthanum and / or rare earth metals. Furthermore, other metals can also be suitable, for example aluminum, zirconium, tantalum, copper, silver and / or titanium or oxidizable nonmetallic substances. In addition, a getter may also comprise or be formed from CaO, BaO and MgO. However, a getter can also comprise or be formed from a desiccant. for example, water can be absorbed irreversibly in desiccant without changing the volume or water can bond by means of physisorption without significantly changing its volume in the process.By supplying heat, for example by increasing the temperature, the adsorbed water molecules can be removed again. In various configurations, a getter can have, for example, dried silica gels or zeolites or be formed therefrom. A getter comprising or formed from a zeolite may adsorb oxygen and / or water in the pores and channels of the zeolite. When water and / or oxygen is adsorbed by means of dried silica gels and / or zeolites, no harmful substances or substance mixtures can be formed for the underlying layers. Furthermore, the getters of dried silica gels and / or zeolite cannot have a change in volume by means of the reaction with water and / or oxygen.In various configurations, the getter particles can have an average diameter of less than approximately 50 μm, for example less than approximately 1 μm. The mean diameter of the getter particles should not be greater than the thickness of the getter layer, for example in order not to damage the adjacent layers and the component.In various configurations, the getter particles can have, for example, a maximum average diameter which corresponds to approximately 20% of the thickness of the getter layer.Getter particles having an average diameter of less than about 1 μm, for example in a range from about 0 nm to about 500 nm, can have the advantage that even with a dense packing of the getter particles, punctiform forces on, for example, an OLED are reduced. Furthermore, getter particles having an average diameter of less than approximately 100 nm can be optically inactive, for example they cannot scatter light.Within the scope of this description, an antireflection layer can be understood as a layer which is configured for internal decoupling or internal coupling.During the internal decoupling, for example, electromagnetic radiation, for example light, can be decoupled, which is guided in the organic functional layer structure of the optoelectronic component, for example the organic functional layer structure and / or the electrodes.In the context of this description, an average refractive index of a layer structure having a plurality of sublayers can be understood as an averaged refractive index of the sublayers. The mean refractive index can be the sum of the layer thickness-averaged refractive indices of the sublayers. In order to determine a layer-thickness-averaged refractive index of a sublayer, the refractive index of the sublayer can be weighted with the relative proportion of the thickness of the layer to the thickness of the layer structure.An optoelectronic component is provided, the optoelectronic component having: optionally a carrier; an organic functional layer structure, wherein the organic functional layer structure is formed on or above a carrier and is configured to absorb and / or provide electromagnetic radiation; an antireflection / getter layer structure arranged in the beam path of the organic functional layer structure, which comprises: getter material having a lower average refractive index than the organic functional layer structure; an antireflection layer, wherein material of the antireflection layer is arranged in the beam path of the organic functional layer structure at least partially between the organic functional layer structure and the getter material, and wherein the material of the antireflection layer arranged between the organic functional layer structure and the getter material has an average refractive index which is greater than the average refractive index of the getter material and / or has at least one scattering additive material distributed in a matrix.In one configuration of the optoelectronic component, the getter can be formed in a getter layer, wherein the getter is contained in a getter matrix.In one configuration of the optoelectronic component, the substance or the substance mixture of the getter matrix can be configured for the substance-to-substance bonding, for example can comprise an adhesive or be formed therefrom.In one configuration of the optoelectronic component, at least one type of getter can be configured as at least one type of particle, wherein the at least one type of getter particle is distributed in the getter matrix.In one configuration of the optoelectronic component, at least one type of getter can be dissolved in the getter matrix.In one configuration of the optoelectronic component, at least one type of getter can be configured such that the getter reacts with at least one harmful substance.In one configuration of the optoelectronic component, the getter can comprise a substance or be formed therefrom, such that the at least one harmful substance chemically reacts with the getter.In one configuration of the optoelectronic component, the getter can comprise a substance or be formed therefrom, such that the at least one harmful substance is physisorbed on the getter.In one configuration of the optoelectronic component, the organic functional layer structure, the getter layer and / or the antireflection layer can / can be formed translucent and / or transparent.In one configuration of the optoelectronic component, the optoelectronic component can be formed as an organic optoelectronic component, for example an organic solar cell or an organic light-emitting diode.In one configuration of the optoelectronic component, the organic functional layer structure of the optoelectronic component may further comprise a first electrode and a second electrode, wherein the organic functional layer structure is arranged electrically between the electrodes.In one configuration of the optoelectronic component, the optoelectronic component may further comprise at least one barrier thin film between the organic functional layer structure and the getter.In one configuration of the optoelectronic component, the at least one barrier thin-film layer can be formed in such a way that the organic functional layer structure is protected from harmful substances, for example by the barrier thin-film layer being formed in physical contact with the organic functional layer structure and surrounding the latter.In one configuration of the optoelectronic component, the at least one barrier thin-film layer may comprise or be formed from a substance which is intrinsically impermeable with respect to harmful substances with respect to the organic functional layer structure, for example impermeable with respect to water and / or oxygen.In one configuration of the optoelectronic component, the at least one barrier thin film may comprise a ceramic, a metal and / or a metal oxide or be formed therefrom.In one configuration of the optoelectronic component, the at least one barrier thin film can at least partially surround the organic functional layer structure, for example at least partially from below, at least partially laterally and / or at least partially from above, for example completely.In one configuration of the optoelectronic component, the at least one barrier thin-film layer can surround the organic functional layer structure laterally and / or flatly.In one configuration of the optoelectronic component, the at least one barrier thin-film layer can completely surround the organic functional layer structure together with the carrier.In one configuration of the optoelectronic component, the barrier thin-film layer may have diffusion channels with respect to at least one harmful substance of the organic functional layer structure, wherein the diffusion channels penetrate the barrier thin-film layer.The optoelectronic component has an optically active region and an optically inactive region.In one configuration of the optoelectronic component, at least the optically inactive region can comprise a getter, for example a getter layer.The getter layer has a first thickness in a first region and a second thickness in a second region, wherein the second thickness is smaller than the first thickness. The transition between the first region and the second region can be discontinuous, for example, similar to a step, or continuous, for example linear, nonlinear.The first region has the optically active region and the second region has the optically inactive region.In one configuration of the optoelectronic component, the antireflection layer can be configured in such a way that the proportion of the electromagnetic radiation which is reflected by at least one boundary surface of the getter layer is reduced.In one configuration of the optoelectronic component, the antireflection layer can have a higher refractive index than the getter layer.In one configuration of the optoelectronic component, the antireflection layer can have a higher average refractive index than the organic functional layer structure.In one configuration of the optoelectronic component, the antireflection layer can be formed in the beam path of the optoelectronic component between the organic functional layer structure and the getter layer.In one configuration of the optoelectronic component, the antireflection layer can have an average refractive index in a range from approximately 1.5 to approximately 2.5.In one configuration of the optoelectronic component, the antireflection layer can have at least one type of additive in a matrix. The substance or the substance mixture of the matrix can also be referred to as a molding material or potting material.In one configuration of the optoelectronic component, the matrix may include a substance or a substance mixture which / which intrinsically has a refractive index in a range from approximately 1.3 to approximately 2.5.In one configuration of the optoelectronic component, at least one type of additional material of the antireflection layer of the antireflection layer can be formed in such a way that the antireflection layer has an average refractive index in a range from approximately 1.5 to approximately 2.5.In one configuration of the method, a type of additional material which increases the refractive index of the antireflection layer can be formed as particles. The particles can be designed, for example, to be non-scattering for light, for example, having an average diameter in a range from approximately 10 nm to approximately 200 nm. The particles may have, for example, a refractive index in a range from about 1.5 to about 2.5. This type of additive material can have or be formed from, for example, a metal, a metal oxide, and / or a ceramic as substance or substance mixture, for example TiO 2, Al 2 O 3, Y 2 O 3 or ZrO 2. This type of additive material may have, for example, a mass fraction with respect to the antireflection layer in a range from about 2% to about 70%.In one configuration of the optoelectronic component, the antireflection layer can comprise at least one type of additional material.In one configuration of the optoelectronic component, the getter can be formed as a type of additional material of the antireflection layer.In one configuration of the optoelectronic component, at least one type of additive material can be formed as particles, i.e. particulate additives.In one configuration of the optoelectronic component, at least one type of additional material can be dissolved in the matrix.In one configuration of the optoelectronic component, the matrix may include or be formed from a glass solder and / or a plastic.In one configuration of the optoelectronic component, the antireflection layer can be formed, for example arranged, in a planar manner, for example over the whole area, on or above the substrate.In one configuration of the optoelectronic component, the antireflection layer may have a thickness in a range from approximately 1 μm to approximately 100 μm, for example in a range from approximately 10 μm to approximately 100 μm, for example approximately 25 μm.In one configuration of the optoelectronic component, the antireflection layer can be formed as a layer in a sectional plane of an organic light-emitting diode and / or an organic solar cell.In one configuration of the optoelectronic component, the matrix of the antireflection layer can be amorphous.In one configuration of the optoelectronic component, the matrix of the antireflection layer can comprise a glass and / or a plastic.In one configuration of the optoelectronic component, the matrix of the antireflection layer can comprise a substance or substance mixture or be formed therefrom from the group of the glass systems: PbO-containing systems: PbO-B 2 O 3, PbO-SiO 2, PbO-B 2 O 3- SiO 2, PbO-B 2 O 3- ZnO 2, PbO-B 2 O 3- Al 2 O 3, wherein the PbO-containing glass solder can also have Bi 2 O 3 ; Bi 2 O 3- containing systems: Bi 2 O 3- B2O3, Bi2O3-B2O3-SiO2, Bi 2 O 3- B 2 O 3- ZnO, Bi 2 O 3- B 2 O 3- ZnO-SiO 2.In one configuration of the optoelectronic component, the Bi-containing antireflection layer can additionally comprise a substance or a substance mixture from the group of the substances: Al 2 O 3, alkaline earth metal oxides, alkali metal oxides, ZrO 2, TiO 2, HfO 2, Nb 2 O 5, Ta 2 O 5, TeO 2, WO3, MO3, Sb2O3Ag2O, SnO 2, rare earth oxides.In one configuration of the optoelectronic component, UV-absorbing additives may be added to the glass of the matrix as glass components. For example, to increase the UV absorption, in the process of the glass melt, low-melting glasses, for example lead-containing glasses, substances or substance mixtures comprising Ce, Fe, Sn, Ti, Pr, Eu and / or V compounds can be added as glass mixture constituents.A process of glass melting can be understood to mean thermal liquefaction, i.e. melting, of a glass. The UV-absorbing additives can be dissolved as a constituent in the glass. Following the glass melting process, the glass can be pulverized, applied in the form of coatings to a carrier and subsequently vitrified by means of a temperature treatment.In one configuration of the optoelectronic component, the substance or the substance mixture of the matrix can have an intrinsically lower UV transmission than the substrate.By means of the lower UV transmission of the matrix, a V protection for layers with respect to the beam path can be formed on or above the antireflection layer. The lower UV transmission of the matrix of the antireflection layer with respect to the substrate can be formed, for example, by means of a higher absorption and / or reflection of UV radiation.In one configuration of the optoelectronic component, the substance or the substance mixture of the matrix of the antireflection layer can be liquefied at a temperature up to a maximum of approximately 600° C.In one configuration of the optoelectronic component, the matrix can comprise one of the following substances or be formed therefrom: a silicone, for example polydimethylsiloxane, polydimethylsiloxane / polydiphenylsiloxane; a silazane, an epoxy, a polyacrylate, a polycarbonate, a polyimide, a polyurethane or the like, for example a silicone hybrid, a silicone-epoxy hybrid.In one configuration of the optoelectronic component, the additives may comprise or be formed from an inorganic substance or an inorganic substance mixture.In one configuration of the optoelectronic component, the at least one type of additional material of the antireflection layer can comprise a substance, a substance mixture or a stoichiometric compound or be formed therefrom from the group of the substances: TiO 2, CeO 2, Bi 2 O 3, ZnO, SnO 2, Al 2 O 3, SiO 2, Y 2 O 3, ZrO_NER100, a phosphor, a dye, a UV-absorbing additional material, Examples of such materials are UV-absorbing glass particles, UV-absorbing metallic nanoparticles, and a UV-absorbing phosphor.In one configuration of the optoelectronic component, the additions may have a curved surface, for example similar or identical to an optical lens, for example similar to a converging lens or diverging lens.In one configuration of the optoelectronic component, the particulate additives may have one of the following geometric shapes and / or a part of one of the following geometric shapes: spherical, aspherical, for example prismatic, ellipsoidal, hollow, for example percutaneous; compact, platelet-shaped, rod-shaped or thread-like.In one configuration of the optoelectronic component, the particulate additives may comprise a glass or be formed therefrom.In one configuration of the optoelectronic component, the particulate additives may have an average grain size in a range from approximately 0.01 μm to approximately 10 μm, for example in a range from approximately 0.1 μm to approximately 1 μm.In one configuration of the optoelectronic component, the additives on or above the substrate in the antireflection layer may have a layer having a thickness of approximately 0.1 μm to approximately 100 μm.In one configuration of the optoelectronic component, the additions of the antireflection layer can have a plurality of layers one above the other on or above the substrate, wherein the individual layers can be formed differently.In one configuration of the optoelectronic component, in the layers of the additives, the average size of the particulate additives of at least one particulate additive material may decrease from the surface of the substrate.In one configuration of the optoelectronic component, the individual layers of the additives may have a different average size of the particulate additives and / or a different optical property for electromagnetic radiation in at least one wavelength range, for example having a wavelength of less than approximately 400 nm.In one configuration of the optoelectronic component, the individual layers of the additives may have a different average size of the particulate additives and / or a different refractive index for electromagnetic radiation.In one configuration of the optoelectronic component, the antireflection layer can be configured as a scattering layer, i.e. as an outcoupling layer or incoupling layer.In one configuration of the optoelectronic component, the antireflection layer can have particulate additives which are configured as scattering particles for electromagnetic radiation, for example light, wherein the scattering particles can be distributed in the matrix.In other words: the matrix can have at least one scattering additive material, such that the antireflection layer can additionally form a scattering effect with respect to incident electromagnetic radiation in at least one wavelength range, for example by means of a refractive index of the scattering particles or scattering additives that is different from the matrix and / or a diameter which corresponds approximately to the size of the wavelength of the radiation to be scattered.The scattering effect can relate to electromagnetic radiation emitted or absorbed by the organic functional layer system, for example in order to increase the light decoupling or light coupling.In one configuration of the optoelectronic component, the antireflection layer with scattering additives can have a difference in the refractive index of the scattering additives from the refractive index of the matrix of greater than approximately 0.05.In one configuration of the optoelectronic component, the part of the scattering layer above the scattering centers can have a thickness equal to or greater than the roughness of the uppermost layer of the scattering particles without a matrix, such that at least one smooth surface is formed, i.e. the surface can have a low root mean square (RMS) roughness, for example less than 10 nm.In one configuration of the optoelectronic component, an additional material may be configured as a dye.In one configuration of the optoelectronic component, the optical appearance of the antireflection layer can be changed by means of the dye.In one configuration of the optoelectronic component, the dye can absorb electromagnetic radiation in a wavelength range or undesired wavelength ranges not relevant to application specific, for example greater than approximately 700 nm. As a result, the optical appearance of the antireflection layer can be changed, for example the antireflection layer can color without degrading the efficiency in a wavelength range that is technically relevant for the application of the optoelectronic component. In other words: in one configuration, the antireflection layer can additionally be configured as a color layer.In one configuration of the optoelectronic component, an additional material of the antireflection layer can be configured as a type of UV-absorbing additional material.In other words: in one configuration, the antireflection layer can additionally be configured as a UV protection layer.In one configuration of the optoelectronic component, an additional material of the antireflection layer can be configured as a wavelength-converting additional material, for example as a phosphor.In other words: in one configuration, the antireflection layer can additionally be configured as a phosphor layer.In one configuration of the optoelectronic component, an additional material of the antireflection layer can be configured as a getter.In other words: in one configuration, the antireflection layer can additionally be configured as a getter layer.In one configuration of the optoelectronic component, the additives can scatter electromagnetic radiation, absorb UV radiation, convert the wavelength of electromagnetic radiation, color the antireflection layer and / or bind harmful substances.Additives which can, for example, scatter electromagnetic radiation and cannot absorb UV radiation can, for example, comprise Al 2 O 3, SiO 2, Y 2 O 3 or ZrO2or be formed therefrom.Additives which, for example, scatter electromagnetic radiation and convert the wavelength of electromagnetic radiation can, for example, be configured as glass particles with a phosphor.In one configuration of the optoelectronic component, the getter particles can be configured as scattering particles.In one configuration of the optoelectronic component, the antireflection layer can be structured, for example topographically, for example laterally and / or vertically; for example by means of a different material composition of the antireflection layer, for example laterally and / or vertically, for example with a different local concentration of at least one additional material.In one configuration of the optoelectronic component, the concentration of the additives in the antireflection layer can be smaller or greater in at least a third region than in a fourth region.In one configuration of the optoelectronic component, the antireflection layer may have at least one structured boundary surface. The at least one structured interface can be formed, for example, by roughening one of the interfaces or forming a pattern on one of the interfaces of the antireflection layer.In one configuration of the optoelectronic component, the structured boundary surface of the antireflection layer can be formed by microlenses.The microlenses and / or the interface roughness can be understood, for example, as scattering centers, for example for increasing the light input / output.In one configuration of the optoelectronic component, the antireflection layer can be formed as an optical grating, wherein the optical grating has a structured layer having regions with a low refractive index.In one configuration of the optoelectronic component, at least one antireflection layer together with the carrier can at least partially surround the organic functional layer structure, for example at least partially from below, at least partially laterally and / or at least partially from above, for example completely.In one configuration of the optoelectronic component, the at least one getter layer together with the carrier can at least partially surround the organic functional layer structure, the at least one barrier thin film and / or the at least one antireflection layer, for example at least partially from below, at least partially laterally and / or at least partially from above, for example completely.In one configuration of the optoelectronic component, the optoelectronic component can furthermore have at least one protective layer on or above the antireflection layer, wherein the protective layer is formed in such a way that the antireflection layer is protected from at least one harmful substance.In one configuration of the optoelectronic component, the at least one protective layer can at least partially surround the organic functional layer structure, the at least one barrier thin film, the at least one antireflection layer and / or the at least one getter layer, for example at least partially from below, at least partially laterally and / or at least partially from above, for example completely.In one configuration of the optoelectronic component, the optoelectronic component can furthermore have a cover on or above the getter, wherein the cover is arranged in such a way that the diffusion rate of at least one harmful substance into the getter is reduced, for example on or above a planar surface of the optoelectronic component.In one configuration of the optoelectronic component, the organic functional layer structure may be arranged on or above the getter and / or the barrier thin-film layer.In one configuration of the optoelectronic component, at least one electrical feedthrough can be formed in the at least one protective layer, the carrier, the at least one barrier thin film, the at least one antireflection layer and / or the at least one getter layer, wherein the electrical feedthrough is configured for electrically contacting the organic functional layer structure, for example for electrically contacting the at least one electrode which is electrically connected to the organic functional layer structure.In one configuration of the optoelectronic component, the optoelectronic component may have at least two antireflection / getter layer structures, wherein the at least two antireflection / getter layer structures are arranged on or above the same side or on or above different sides of the organic functional layer structure.A method for producing an optoelectronic component is provided, the method comprising: providing an organic functional layer structure on or above a carrier, wherein the organic functional layer structure is formed for receiving and / or providing electromagnetic radiation; forming an antireflection / getter layer structure in the beam path of the organic functional layer structure, the antireflection / getter layer structure comprising: a getter material which has a lower average refractive index than the organic functional layer structure; an antireflection layer, wherein material of the antireflection layer is formed in the beam path of the organic functional layer structure at least partially between the organic functional layer structure and the getter material, and wherein the material of the antireflection layer which is arranged between the organic functional layer structure and the getter material has an average refractive index which is greater than the average refractive index of the getter material and / or has at least one scattering additive material distributed in a matrix.In one configuration of the method, the organic functional layer structure, the getter layer and / or the antireflection layer can be formed to be translucent and / or transparent.In one configuration of the method, the optoelectronic component can be formed as an organic optoelectronic component, for example an organic solar cell or an organic light-emitting diode.In one configuration of the method, the method may further comprise forming a first electrode and a second electrode, wherein the organic functional layer structure is formed electrically between the electrodes.In one configuration of the method, the getter can be formed in a getter layer, wherein the getter is contained in a getter matrix.In one configuration of the method, the substance or the substance mixture of the getter matrix can be configured for the materially bonded connection, for example can comprise an adhesive or can be formed therefrom.In one configuration of the method, at least one type of getter can be configured as at least one type of particle, wherein the at least one type of getter particle is distributed in the getter matrix, for example homogeneously and / or as at least one layer.In one embodiment of the method, at least one type of getter can be dissolved in the getter matrix.In one configuration of the method, at least one type of getter can be formed in such a way that the getter reacts with the at least one harmful substance.In one configuration of the method, the getter can comprise a substance or be formed therefrom, such that the at least one harmful substance chemically reacts with the getter.In one configuration of the method, the getter can comprise a substance or be formed therefrom, such that the at least one, harmful substance is physisorbed on the getter.In one configuration of the method, the method can furthermore form an optically active region and an optically inactive region, wherein a getter, for example a getter layer, is formed at least in the optically inactive region.The getter layer is formed in a first region having a first thickness and in a second region having a second thickness, the second thickness being smaller than the first thickness. The transition between the first region and the second region can be discontinuous, for example, similar to a step, or continuous, for example linear, nonlinear.The first region has the optically active region and the second region has the optically inactive region.In one configuration of the method, the method can furthermore comprise forming at least one barrier thin film between the organic functional layer structure and the getter, for example in physical contact with the organic functional layer structure.In one configuration of the method, the at least one barrier thin film can be formed in such a way that the organic functional layer structure is protected from harmful substances.In one configuration of the method, the at least one barrier thin-film layer can comprise or be formed from a substance which is intrinsically impermeable with respect to harmful substances, for example impermeable with respect to water and / or oxygen.In one configuration of the method, the at least one barrier thin-film layer can comprise a ceramic, a metal and / or a metal oxide or can be formed therefrom.In one configuration of the method, the at least one barrier thin film can be formed in such a way that the at least one barrier thin film surrounds the organic functional layer structure at least partially, for example at least partially from below, at least partially laterally and / or at least partially from above, for example completely.In one configuration of the method, the at least one barrier thin film can be formed in such a way that the at least one barrier thin film surrounds the organic functional layer structure laterally and / or flatly.In one configuration of the method, the at least one barrier thin film can be formed in such a way that the at least one barrier thin film together with the carrier completely surrounds the organic functional layer structure.In one configuration of the method, the barrier thin-film layer can have diffusion channels with respect to at least one harmful substance of the organic functional layer structure, wherein the diffusion channels penetrate the barrier thin-film layer.In one configuration of the method, the antireflection layer can be formed in such a way that the proportion of the electromagnetic radiation which is reflected by at least one boundary surface of the getter layer is reduced.In one configuration of the method, the antireflection layer can be formed in such a way that the antireflection layer has a higher average refractive index than the organic functional layer structure.In one configuration of the method, the antireflection layer can be formed in the beam path of the optoelectronic component between the organic functional layer structure and the getter layer.In one configuration of the method, the antireflection layer can be formed in such a way that the antireflection layer has approximately an average refractive index between the amount of the average refractive index of the organic functional layer structure and the amount of the average refractive index of the getter layer.In one configuration of the method, the antireflection layer can be formed in such a way that the antireflection layer has an average refractive index in a range from approximately 1.5 to approximately 2.5.In one configuration of the method, the antireflection layer can be formed in such a way that the antireflection layer has at least one type of additional material in a matrix. The substance or the substance mixture of the matrix can also be referred to as a molding material or potting material.In one embodiment of the method, at least one type of additional material can be distributed in the matrix.In one configuration of the method, at least one type of additive material can be formed as particles, i.e. particulate additives.In one embodiment of the method, at least one type of additional material can be dissolved in the matrix.In one configuration of the method, the matrix may comprise a substance or a substance mixture which intrinsicly has a refractive index in a range from approximately 1.3 to approximately 2.5.In one configuration of the method, at least one type of additional material of the antireflection layer can be formed in such a way that the antireflection layer has an average refractive index in a range from approximately 1.5 to approximately 2.5.In one configuration of the method, a type of additional material which increases the refractive index of the antireflection layer can be formed as particles. The particles can be designed, for example, to be non-scattering for light, for example have an average diameter in a range from approximately 10 nm to approximately 200 nm. The particles may have, for example, a refractive index in a range from about 1.5 to about 2.5. This type of additive material can have or be formed from, for example, a metal, a metal oxide, and / or a ceramic as substance or substance mixture, for example TiO 2, Al 2 O 3, Y 2 O 3 or ZrO 2. This type of additive material may have, for example, a mass fraction with respect to the antireflection layer in a range from about 2% to about 70%.In one configuration of the method, the getter can be formed as a type of additional material of the antireflection layer.In one configuration of the method, the matrix can comprise a glass solder and / or a plastic or can be formed therefrom.In one configuration of the method, the antireflection layer can be formed, for example arranged, over the whole area on or above the substrate.In one configuration of the method, the antireflection layer can be formed with a thickness in a range from approximately 1 μm to approximately 100 μm, for example in a range from approximately 10 μm to approximately 100 μm, for example approximately 25 μm.In one configuration of the method, the matrix of the antireflection layer can be formed amorphous.In one configuration of the method, the matrix of the antireflection layer can comprise one of the substances or be formed therefrom from the following group of glass systems: PbO-containing systems: PbO-B 2 O 3, PbO-SiO 2, PbO-B 2 O 3- SiO 2, PbO-B 2 O 3- ZnO 2, PbO-B 2 O 3- Al 2 O 3, wherein the PbO-containing glass solder can also have Bi 2 O 3 ; Bi 2 O 3- containing systems: Bi 2 O 3- B2O3, Bi2O3-B2O3-SiO2, Bi 2 O 3- B 2 O 3- ZnO, Bi 2 O 3- B 2 O 3- ZnO-SiO 2.In one configuration of the method, the Bi-containing antireflection layer can additionally have one of the following substances or a substance mixture of the following substances: Al 2 O 3, alkaline earth metal oxides, alkali metal oxides, ZrO 2, TiO 2, HfO 2, Nb 2 O 5, Ta 2 O 5, TeO 2, WO3, MO2, Sb2O3AG2O, SnO 2, rare earth oxides.In one embodiment of the method, additives, for example UV-absorbing additives, can be added as glass components to the glass of the matrix.For example, to increase the UV absorption, in the process of the glass melt, low-melting glasses, for example lead-containing glasses, substances or substance mixtures comprising Ce, Fe, Sn, Ti, Pr, Eu and / or V compounds can be added as glass mixture constituents.A process of glass melting can be understood to mean thermal liquefaction, i.e. melting, of a glass.Additives, for example UV-absorbing additives, can be dissolved, for example, as a constituent in the glass.Following the glass melting process, the glass can be pulverized to glass particles, applied in the form of coatings to a carrier and subsequently vitrified by means of a temperature treatment.In one configuration of the method, the substance or the substance mixture of the matrix can have an intrinsically lower UV transmission than the substrate.By means of the lower UV transmission of the matrix, UV protection for layers can be formed on or above the antireflection layer. The lower UV transmission of the matrix of the antireflection layer with respect to the substrate can be formed, for example, by means of a higher absorption and / or reflection of UV radiation.In one configuration of the method, the substance or the substance mixture of the matrix of the antireflection layer can be liquefied at a temperature up to a maximum of approximately 600° C.In one configuration of the method, the substance or the substance mixture of the matrix can be formed as glass particles before the formation of the antireflection layer.In one configuration of the method, the glass particles can have additives, for example the particulate additives.In one configuration of the method, a layer of particulate additives can be formed on or above the substrate from the at least one type of additive.In one configuration of the method, a coating of glass particles can be formed on or over a layer of particulate additives. The formation of the coating of glass particles can be carried out, for example, by means of a glass particle suspension or glass particle paste.In one configuration of the method, the glass particle suspension or glass particle paste can be dried on or over the particulate additives by means of evaporating constituents at a first temperature.In one embodiment of the method, by increasing the temperature, the organic constituents (binders) can be substantially completely removed from the dried layer of the particulate additives and from the dried glass powder layer.In one configuration of the method, by increasing the temperature to a second value, wherein the second temperature is very much greater than the first temperature of the drying, the glass or glass powder of the substance or of the substance mixture of the matrix of the antireflection layer can be softened in such a way that it is liquefied, for example can flow.The maximum amount of the second temperature value for liquifying or glazing the glass powder layer may be dependent on the carrier of the optoelectronic component. The temperature regime (temperature and time) may be chosen such that the carrier does not deform, but the glass solder of the antireflection layer already has a viscosity such that it can run, i.e. flow, smoothly and a very smooth glassy surface can be formed.The glass of the glass powder layer can have a second temperature, i.e. the glazing temperature, for example below the transformation point of the carrier, for example of the carrier glass (viscosity of the carrier η=10 14,5 dPa·s), and at maximum at the softening temperature viscosity of the carrier=10 7,6 dPa·s) of the carrier glass, for example below the softening temperature and approximately at the upper cooling point (viscosity of the carrier η=10 13,0 dPa s).In one configuration of the method, when using soda-lime glass as the carrier, the glass powder can be vitrified at temperatures up to a maximum of approximately 600° C.In one configuration of the method, at least one continuous glass connection of the carrier with the liquefied glass above the particulate additions can be formed by means of the liquefied glass of the substance or of the substance mixture of the matrix of the antireflection layer, which flows between the particulate additions.In one configuration of the method, the surface of the liquefied glass above the particulate additions can be additionally smoothed once again after solidification of the glass by means of local heating.In one configuration of the method, the local heating can be formed by means of plasma or laser radiation.In one configuration of the method, the matrix of the antireflection layer can comprise one of the following substances or be formed therefrom: a silicone, for example polydimethylsiloxane, polydimethylsiloxane / polydiphenylsiloxane; a silazane, an epoxy, a polyacrylate, a polycarbonate, a polyimide, a polyurethane or the like, for example a silicone hybrid, a silicone-epoxy hybrid.In one configuration of the method, the antireflection layer can be formed wet-chemically, for example from a solution, suspension, dispersion or paste.In one configuration of the method, the additives can be dissolved in the solution, suspension, dispersion or paste of the organic matrix.In one embodiment of the method, the organic matrix can be applied to or over a layer of particulate additives in such a way that the substance or the substance mixture dissolves the additives or runs between the particulate additives.In one configuration, the antireflection layer can be formed by means of doctor-coating a solution, paste, suspension or dispersion.In one configuration of the method, the additives can comprise or be formed from an inorganic substance or an inorganic substance mixture.In one configuration of the method, the at least one type of additive material of the antireflection layer can comprise or be formed from a substance or a substance mixture or a stoichiometric compound from the group of the substances: TiO 2, CeO 2, Bi 2 O 3, ZnO, SnO 2, Al 2 O 3, SiO 2, Y 2 O 3, ZrO2, a phosphor, a dye, a UV-absorbing additive material, for example UV-absorbing glass particles, UV-absorbing metallic nanoparticles, a UV-absorbing phosphor.In one configuration of the method, the additions can have a curved surface, for example similar or identical to an optical lens.In one configuration of the method, the particulate additives may have one of the following geometric shapes and / or a part of one of the following geometric shapes: spherical, aspherical, for example prismatic, ellipsoidal, hollow, for example percutaneous; compact, platelet-shaped, rod-shaped or thread-like.In one configuration of the method, the particulate additives may comprise a glass or be formed therefrom.In one configuration of the method, the particulate additives may have an average grain size in a range from approximately 0.01 μm to approximately 10 μm, for example in a range from approximately 0.1 μm to approximately 1 μm.In one configuration of the method, the additives on or above the substrate in the antireflection layer may have a layer having a thickness of approximately 0.1 μm to approximately 100 μm.In one configuration of the method, the additions of the antireflection layer can have a plurality of layers one above the other on or above the substrate, it being possible for the individual layers to be formed differently.In one configuration of the method, in the layers of the additives, the average size of the particulate additives of at least one particulate additive material can decrease from the surface of the substrate.In one configuration of the method, the individual layers of the additives can have a different average size of the particulate additives and / or a different transmission for electromagnetic radiation in at least one wavelength range, for example with a wavelength of less than approximately 400 nm.In one configuration of the method, the individual layers of the additives can have a different average size of the particulate additives and / or a different refractive index for electromagnetic radiation.In one configuration of the method, the antireflection layer can be formed as a scattering layer, i.e. as an outcoupling layer or incoupling layer.In one configuration of the method, the antireflection layer can have particulate additives which are configured as scattering particles for electromagnetic radiation, for example light, it being possible for the scattering particles to be distributed in the matrix.In other words: the matrix can have at least one scattering additive material, such that the antireflection layer can additionally form a scattering effect with respect to incident electromagnetic radiation in at least one wavelength range, for example by means of a refractive index of the scattering particles or scattering additives that is different from the matrix and / or a diameter which corresponds approximately to the size of the wavelength of the radiation to be scattered.The scattering effect can relate to electromagnetic radiation emitted or absorbed by the organic functional layer system, for example in order to increase the light decoupling or light coupling.In one configuration of the method, the antireflection layer can be formed in such a way that the antireflection layer with scattering additives has a difference in the refractive index of the scattering additives from the refractive index of the matrix of greater than approximately 0.05.In one configuration of the method, the antireflection layer can be formed in such a way that the part of the antireflection layer above the scattering centers has a thickness equal to or greater than the roughness of the uppermost layer of the scattering particles without a matrix, with the result that at least one smooth surface is formed, i.e. the surface can have a low root mean square (RMS) roughness, for example less than 10 nm.In one configuration of the method, an additional material can be configured as a dye.In one configuration of the method, the optical appearance of the antireflection layer and / or of the optoelectronic component can be changed by means of the dye.In one configuration of the method, the dye can absorb electromagnetic radiation in a wavelength range or undesired wavelength ranges not relevant to the application, for example greater than approximately 700 nm. As a result, the optical appearance of the antireflection layer can be changed, for example the antireflection layer can color without degrading the efficiency in a wavelength range that is technically relevant for the application of the optoelectronic component. In other words: in one configuration, the antireflection layer can additionally be formed as a color layer.In one configuration of the method, an additional material of the antireflection layer can be configured as a type of UV-absorbing additional material.In other words: in one configuration, the antireflection layer can additionally be formed as a UV protection layer.In one configuration of the method, an additional material of the antireflection layer can be formed as a wavelength-converting additional material, for example as a phosphor.In other words: in one configuration, the antireflection layer can additionally be formed as a phosphor layer.In one configuration of the method, an additional material of the antireflection layer can be configured as a getter.In other words: in one configuration, the antireflection layer can additionally be formed as a getter layer.In one embodiment of the method, the additives can scatter electromagnetic radiation, absorb UV radiation, convert the wavelength of electromagnetic radiation, color the antireflection layer and / or bind harmful substances.Additives which can, for example, scatter electromagnetic radiation and cannot absorb UV radiation can, for example, comprise Al 2 O3, SiO 2, Y 2 O 3 or ZrO2or be formed therefrom.Additives which, for example, scatter electromagnetic radiation and convert the wavelength of electromagnetic radiation can, for example, be configured as glass particles with a phosphor.In one configuration of the method, the getter particles can be configured as scattering particles.In one configuration of the method, the antireflection layer can be structured, for example topographically, for example laterally and / or vertically; for example by means of a different material composition of the antireflection layer, for example laterally and / or vertically, for example with a different local concentration of at least one additional material.In one configuration of the method, the concentration of the additives in the antireflection layer can be lower or greater in at least a third region of the optoelectronic component than in a fourth region, for example in the optically inactive region.In one configuration of the method, the antireflection layer can be formed with at least one structured boundary surface.The at least one structured interface can be formed, for example, by roughening one of the interfaces or forming a pattern on one of the interfaces of the antireflection layer.In one configuration of the method, the structured boundary surface of the antireflection layer can be formed by microlenses.The microlenses and / or the interface roughness can be understood, for example, as scattering centers, for example for increasing the light input / output.In one configuration of the method, the antireflection layer can be formed as an optical grating, wherein the optical grating has a structured layer having regions with a low refractive index.In one configuration of the method, the at least one antireflection layer can be formed in such a way that the at least one antireflection layer surrounds the organic functional layer structure at least partially, for example at least partially from below, at least partially laterally and / or at least partially from above, for example completely.The at least one getter layer is formed in such a way that the at least one getter layer surrounds the organic functional layer structure at least partially laterally and, for example, at least partially from below and / or at least partially from above, for example, completely. The at least one getter layer surrounds the at least one antireflection layer at least partially laterally. In addition, the at least one getter layer can at least partially surround the at least one barrier thin film and / or the at least one antireflection layer, for example at least partially from below, at least partially laterally and / or at least partially from above, for example completely.In one configuration of the method, the method can furthermore have a formation of at least one protective layer on or above the antireflection layer, wherein the protective layer is formed in such a way that the antireflection layer is protected from at least one harmful substance.In one configuration of the method, the at least one protective layer can be formed in such a way that the at least one protective layer surrounds the organic functional layer structure, the at least one barrier thin film, the at least one antireflection layer and / or the at least one getter layer at least partially, for example at least partially from below, at least partially laterally and / or at least partially from above, for example completely.In one configuration of the method, the method can furthermore have a formation of a cover on or above the getter, wherein the cover is arranged and / or formed in such a way that the diffusion rate of at least one harmful substance into the getter is reduced, for example on or above a planar surface of the optoelectronic component.In one configuration of the method, the organic functional layer structure can be formed on or above the getter and / or the barrier thin-film layer.In one configuration of the method, at least one electrical feedthrough can be formed in the at least one protective layer, the carrier, the barrier thin film, the at least one antireflection layer and / or the getter layer, wherein the electrical feedthrough is configured for electrically contacting the organic functional layer structure, for example for electrically contacting the at least one electrode of the organic functional layer structure.In one configuration of the method, the optoelectronic component can be formed with at least two antireflection / getter layer structures, wherein the at least two antireflection / getter layer structures are formed on or above the same side or on or above different sides.The organic functional layer structure may also be formed on the sides thereof.Exemplary embodiments of the invention are illustrated in the figures and are explained in more detail below.They show FIG. 1 shows a schematic cross-sectional view of an optoelectronic component, according to a comparative example; FIGS. 2 a, b show schematic cross-sectional views of optoelectronic components, according to various embodiments; FIGS. 3 a, b show schematic cross-sectional views of optoelectronic components, according to various embodiments; FIGS. 4 a- dshow schematic cross-sectional views of optoelectronic components, according to various comparative examples; FIGS. 5 a- c show schematic cross-sectional views of optoelectronic components, according to various embodiments; and FIGS. 6 a, b show different configurations of a conventional optoelectronic component.In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the figure(s) described. Since components of embodiments may be positioned in a number of different orientations, the direction terminology is for the purpose of illustration and is in no way limiting.In the context of this description, the terms "connected", "connected" and "coupled" are used to describe both a direct and an indirect connection, a direct or indirect connection and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.FIG. 1 shows a schematic cross-sectional view of an optoelectronic component, according to various comparative examples.The optoelectronic component 100, for example an electronic component 100 providing electromagnetic radiation, for example a light-emitting component 100, for example in the form of an organic light-emitting diode 100, can have a carrier 102. The carrier 102 can serve, for example, as a carrier element for electronic elements or layers, for example light-emitting elements. For example, the carrier 102 may include or be formed from glass, quartz, and / or a semiconductor material or any other suitable substance. Furthermore, the carrier 102 can comprise or be formed from a plastic film or a laminate with one or more plastic films. The plastic may include or be formed from one or more polyolefins (for example high or low density polyethylene (PE) or polypropylene (PP)). Furthermore, the plastic may include polyvinyl chloride (PVC), polystyrene (PS), polyester and / or polycarbonate (PC), polyethylene terephthalate (PET), polyethersulfone (PES) and / or polyethylene naphthalate (PEN) or be formed therefrom. The carrier 102 may comprise one or more of the above-mentioned substances. The carrier 102 may include or be formed from a metal or a metal compound, for example copper, silver, gold, platinum or the like. A carrier 102 comprising a metal or a metal compound can also be formed as a metal foil or a metal-coated foil. The carrier 102 can be translucent or even transparent.In various examples, the term "translucent" or "translucent layer" can be understood to mean that a layer is transmissive to light, for example to the light generated by the light-emitting component, for example one or more wavelength ranges, for example to light in a wavelength range of visible light (for example at least in a partial range of the wavelength range from 380 nm to 780 nm). For example, the term "translucent layer" in various examples is understood to mean that substantially the entire amount of light coupled into a structure (for example a layer) is also coupled out of the structure (for example layer), wherein a portion of the light can be scattered in this case. In various examples, the term "transparent" or "transparent layer" can be understood to mean that a layer is transmissive to light (for example at least in a partial region of the wavelength range from 380 nm to 780 nm), wherein light coupled into a structure (for example a layer) is also coupled out of the structure (for example layer) substantially without scattering or light conversion. Thus, in various examples, "transparent" is to be considered a special case of "translucent".In the case that, for example, a light-emitting monochrome electronic component or an electronic component limited in the emission spectrum is to be provided, it is sufficient for the optically translucent layer structure to be translucent at least in a partial region of the wavelength range of the desired monochrome light or for the limited emission spectrum.In various examples, the organic light-emitting diode 100 (or else the light-emitting components according to the examples described above or still below) can be configured as a so-called top and bottom emitter. A top and / or bottom emitter can also be referred to as an optically transparent component, for example a transparent organic light emitting diode.In various examples, a barrier layer 104 can optionally be arranged on or above the carrier 102. The barrier layer 104 can comprise or consist of one or more of the following substances:Aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, and mixtures and alloys thereof. Furthermore, in various examples, the barrier layer 104 may have a layer thickness in a range from approximately 0.1 nm (one atomic layer) to approximately 5000 nm, for example a layer thickness in a range from approximately 10 nm to approximately 200 nm, for example a layer thickness of approximately 40 nm.An electrically active region 106 of the light-emitting component 100 can be arranged on or above the barrier layer 104. The electrically active region 106 can be understood as the region of the light-emitting component 100 in which an electrical current flows for operating the light-emitting component 100. In various examples, the electrically active region 106 may include a first electrode 110, a second electrode 114 and an organic functional layer structure 112, as will be explained in more detail below.Thus, in various examples, the first electrode 110 (for example in the form of a first electrode layer 110) can be applied on or above the barrier layer 104 (or, if the barrier layer 104 is not present, on or above the carrier 102). The first electrode 110 (also referred to below as lower electrode 110) can be formed from an electrically conductive substance, such as, for example, from a metal or a conductive transparent oxide (TCO) or a layer stack of a plurality of layers of the same metal or different metals and / or the same TCO or different TCOs. Transparent conductive oxides are transparent conductive substances, for example metal oxides, such as, for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin oxide (ITO). Besides binary metal oxygen compounds, such as ZnO, SnO2or In 2 O 3 ternary metal oxygen compounds, such as AlSnO, Zn 2 SnO 4, CdSnO 3, ZnSnO 3, MgIn 2 O 4, GaInO 3, also belong, Zn 2 In 2 O 5 or In 4 Sn 3 O 12 or mixtures of different transparent conductive oxides to form the group of TCOs and can be used in various examples. Furthermore, the TCOs do not necessarily correspond to a stoichiometric composition and can furthermore be p-doped or n-doped.In various examples, the first electrode 110 may include a metal; for example, Ag, Pt, Au, Mg, Al, Ba, In, Ag, Au, Mg, Ca, Sm, or Li, as well as compounds, combinations, or alloys of these materials.In various examples, the first electrode 110 may be formed by a layer stack of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.In various examples, the first electrode 110 may comprise one or more of the following substances alternatively or in addition to the above-mentioned substances: networks of metallic nanowires and particles, for example of Ag; networks of carbon nanotubes; graphene particles and layers; networks of semiconducting nanowires.Further, the first electrode 110 may include electrically conductive polymers or transition metal oxides or electrically conductive transparent oxides.In various examples, the first electrode 110 and the carrier 102 may be formed to be translucent or transparent. In the case that the first electrode 110 comprises or is formed from a metal, the first electrode 110 can have, for example, a layer thickness of less than or equal to approximately 25 nm, for example a layer thickness of less than or equal to approximately 20 nm, for example a layer thickness of less than or equal to approximately 18 nm. Furthermore, the first electrode 110 may have, for example, a layer thickness of greater than or equal to approximately 10 nm, for example, a layer thickness of greater than or equal to approximately 15 nm. In various examples, the first electrode 110 may have a layer thickness in a range from about 10 nm to about 25 nm, for example a layer thickness in a range from about 10 nm to about 18 nm, for example a layer thickness in a range from about 15 nm to about 18 nm.Furthermore, in the case that the first electrode 110 comprises or is formed from a conductive transparent oxide (TCO), the first electrode 110 can have, for example, a layer thickness in a range from approximately 50 nm to approximately 500 nm, for example a layer thickness in a range from approximately 75 nm to approximately 250 nm, for example a layer thickness in a range from approximately 100 nm to approximately 150 nm.Furthermore, in the case that the first electrode 110 is formed from, for example, a network of metallic nanowires, for example, Ag, which may be bonded with conductive polymers, a network of carbon nanotubes, which may be combined with conductive polymers, or graphene layers and composites, the first electrode 110 may have, for example, a layer thickness in a range from about 1 nm to about 500 nm, for example, a layer thickness in a range from about 10 nm to about 400 nm, for example, a layer thickness in a range from about 40 nm to about 250 nm.The first electrode 110 can be designed as an anode, i.e. as a hole-injecting electrode, or as a cathode, i.e. as an electron-injecting electrode.The first electrode 110 may have a first electrical contact pad to which a first electrical potential (provided by an energy source (not shown), for example a current source or a voltage source) may be applied. Alternatively, the first electrical potential can be applied to the carrier 102 and then indirectly applied to the first electrode 110 via it. The first electrical potential can be, for example, the ground potential or another predefined reference potential.Furthermore, the electrically active region 106 of the light-emitting component 100 may have an organic functional layer structure 112 applied or formed on or above the first electrode 110.The organic functional layer structure 112 may have one or more emitter layers 118, for example with fluorescent and / or phosphorescent emitters, and one or more hole-conducting layers 116 (also referred to as hole-transport layer(s) 120). In various examples, alternatively or additionally, one or more electron conducting layers 116 (also referred to as electron transport layer(s) 116) may be provided.Examples of emitter materials that can be used in the light-emitting component 100 according to various examples for the emitter layer(s) 118 include organic or organometallic compounds such as derivatives of polyfluorene, polythiophene and polyphenylene (e.g. 2- or 2,5-substituted poly-p-phenylenevinylene) and metal complexes, for example iridium complexes such as blue-phosphorescent FlrPic (bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl)iridium III), green-phosphorescent Ir(ppy) 3( tris(2-phenylpyridine)iridium III), Red phosphorescent Ru (dtbbpy)3*2(PF 6) ( tris[4,4'-di-tert-butyl-(2,2')-bipyridine]ruthenium(III) complex), blue fluorescent DPAVBi (4,4-bis[4-(di-p-tolylamino)styryl]biphenyl), green fluorescent TTPA (9,10-bis[N,N-di-(p-tolyl)-amino]anthracene), and red fluorescent DCM2 (4-dicyanomethylene)-2-methyl-6-julolideyl-9-enyl-4H-pyran) as nonpolymeric emitters. Such non-polymeric emitters can be deposited, for example, by means of thermal evaporation. Furthermore, polymer emitters can be used which can be deposited in particular by means of a wet chemical method, such as, for example, a spin coating method (also referred to as spin coating).The emitter materials can be embedded in a matrix material in a suitable manner.It should be appreciated that other suitable emitter materials are also provided in other examples.The emitter materials of the emitter layer(s) 118 of the light-emitting component 100 can be selected, for example, such that the light-emitting component 100 emits white light. The emitter layer(s) 118 can / can have a plurality of emitter materials emitting in different colors (for example blue and yellow or blue, green and red), or alternatively the emitter layer(s) 118 can also be constructed from a plurality of sublayers, such as a blue-fluorescent emitter layer 118 or blue-phosphorescent emitter layer 118, a green-phosphorescent emitter layer 118 and a red-phosphorescent emitter layer 118. The mixing of the different colors can result in the emission of light with a white color impression. Alternatively, it can also be provided that a converter material is arranged in the beam path of the primary emission generated by these layers, which converter material at least partially absorbs the primary radiation and emits a secondary radiation of a different wavelength, so that a white color impression results from a (not yet white) primary radiation as a result of the combination of primary radiation and secondary radiation.The organic functional layer structure 112 may generally include one or more electroluminescent layers. The one or more electroluminescent layers may comprise organic polymers, organic oligomers, organic monomers, organic small non-polymeric molecules (small molecules), or a combination of these substances. For example, the organic functional layer structure 112 may include one or more electroluminescent layers embodied as a hole transport layer 120, such that, for example, in the case of an OLED, an effective hole injection into an electroluminescent layer or an electroluminescent region is made possible. Alternatively, in various examples, the organic functional layer structure 112 may include one or more functional layers embodied as an electron transport layer 116, such that, for example, in an OLED, an effective electron injection into an electroluminescent layer or an electroluminescent region is made possible. As the material for the hole transport layer 120, for example, tertiary amines, carbazo derivatives, conductive polyaniline, or polyethylenedioxythiophene can be used. In various examples, the one or more electroluminescent layers may be embodied as an electroluminescent layer.In various examples, the hole transport layer 120 may be deposited, e.g., deposited, on or over the first electrode 110, and the emitter layer 118 may be deposited, e.g., deposited, on or over the hole transport layer 120. In various embodiments, the electron transport layer 116 may be applied, for example deposited, on or above the emitter layer 118.In various examples, the organic functional layer structure 112 (i.e. for example the sum of the thicknesses of hole transport layer(s) 120 and emitter layer(s) 118 and electron transport layer(s) 116) may have a layer thickness of at most approximately 1.5 μm, for example a layer thickness of at most approximately 1.2 μm, for example a layer thickness of at most approximately 1 μm, for example a layer thickness of at most approximately 800 nm, for example a layer thickness of at most approximately 500 nm, for example a layer thickness of at most approximately 400 nm, for example a layer thickness of at most approximately 300 nm. In various examples, the organic functional layer structure 112 can have, for example, a stack of a plurality of organic light emitting diodes (OLEDs) arranged directly one above the other, wherein each OLED can have, for example, a layer thickness of at most approximately 1.5 μm, for example a layer thickness of at most approximately 1.2 μm, for example a layer thickness of at most approximately 1 μm, for example a layer thickness of at most approximately 800 nm, for example a layer thickness of at most approximately 500 nm, for example a layer thickness of at most approximately 400 nm, for example a layer thickness of at most approximately 300 nm. In various examples, the organic functional layer structure 112 may, for example, have a stack of two, three or four OLEDs arranged directly one above the other, in which case, for example, organic functional layer structure 112 may have a layer thickness of not more than approximately 3 μm.The light-emitting component 100 can optionally generally have further organic functional layers, for example arranged on or above the one or more emitter layers 118 or on or above the electron transport layer(s) 116, which serve to further improve the functionality and thus the efficiency of the light-emitting component 100.The second electrode 114 (for example in the form of a second electrode layer 114) can be applied on or above the organic functional layer structure 12 or optionally on or above the one or more further organic functional layer structures.In various examples, the second electrode 114 may include or be formed from the same substances as the first electrode 110, wherein metals are particularly suitable in various examples.In various examples, the second electrode 114 (for example in the case of a metallic second electrode 114) can have, for example, a layer thickness of less than or equal to approximately 50 nm, for example a layer thickness of less than or equal to approximately 45 nm, for example a layer thickness of less than or equal to approximately 40 nm, for example a layer thickness of less than or equal to approximately 35 nm, for example a layer thickness of less than or equal to approximately 30 nm, for example a layer thickness of less than or equal to approximately 25 nm, for example a layer thickness of less than or equal to approximately 20 nm, for example a layer thickness of less than or equal to approximately 15 nm, for example a layer thickness of less than or equal to approximately 10 nm.The second electrode 114 may be formed generally similar to or different from the first electrode 110. In various examples, the second electrode 114 can be formed from one or more of the substances and with the respective layer thickness, as described above in connection with the first electrode 110. In various examples, the first electrode 110 and the second electrode 114 are both formed translucent or transparent. Thus, the light emitting device 100 illustrated in FIG. 1 may be configured as a top and bottom emitter (in other words as a transparent light emitting device 100).The second electrode 114 can be designed as an anode, i.e. as a hole-injecting electrode, or as a cathode, i.e. as an electron-injecting electrode.The second electrode 114 can have a second electrical terminal, to which a second electrical potential (which is different from the first electrical potential), provided by the energy source, can be applied. The second electrical potential can have, for example, a value such that the difference from the first electrical potential has a value in a range from approximately 1.5 V to approximately 20 V, for example a value in a range from approximately 2.5 V to approximately 15 V, for example a value in a range from approximately 3 V to approximately 12 V.An encapsulation 108, for example in the form of an area thin layer / thin layer encapsulation 108, can optionally also be formed on or above the second electrode 114 and thus on or above the electrically active region 106.In the context of this application, a "barrier thin film" 108 or a "barrier thin film" 108 can be understood to mean, for example, a layer or a layer structure which is suitable for forming a barrier to chemical contaminants or atmospheric substances, in particular to water (moisture) and oxygen. In other words, the barrier thin-film layer 108 is formed in such a way that it cannot be penetrated by OLED-damaging substances such as water, oxygen or solvent, or at most in very small proportions.According to one configuration, the barrier thin film 108 may be formed as a single layer (in other words, as a single layer). According to an alternative configuration, the barrier thin-film layer 108 can have a plurality of partial layers formed on top of one another. In other words, according to one configuration, the barrier thin-film layer 108 can be formed as a layer stack (stack). The barrier thin film 108 or one or more sublayers of the barrier thin film 108 can be formed, for example, by means of a suitable deposition method, e.g. by means of an atomic layer deposition (ALD) method according to one configuration, e.g. a plasma-enhanced atomic layer deposition (PEALD) method or a plasma-less atomic layer deposition (PLALD) method, or by means of a chemical vapor deposition (CVD) method according to another configuration, For example, a plasma enhanced chemical vapor deposition (PECVD) method or a plasma less chemical vapor deposition (PCVD) method, or alternatively, by other suitable deposition methods.Very thin layers can be deposited by using an atomic layer deposition (ALD) method. In particular, layers can be deposited whose layer thicknesses are in the atomic layer range.According to one configuration, in the case of a barrier thin-film layer 108 which has a plurality of sublayers, all sublayers can be formed by means of an atomic layer deposition method. A layer sequence which only has ALD layers can also be referred to as a "nanolaminate".According to an alternative configuration, in the case of a barrier thin-film layer 108 which has a plurality of sublayers, one or more sublayers of the barrier thin-film layer 108 can be deposited by means of a deposition method other than an atomic layer deposition method, for example by means of a vapor deposition method.The barrier thin film 108 may have a film thickness of about 0.1 nm (an atomic layer) to about 1000 nm, for example, a film thickness of about 10 nm to about 100 nm according to one configuration, for example, about 40 nm according to one configuration, according to one configuration.According to an embodiment in which the barrier thin-film layer 108 comprises a plurality of sublayers, all sublayers may have the same layer thickness. According to another configuration, the individual sublayers of the barrier thin-film layer 108 may have different layer thicknesses. In other words, at least one of the sublayers may have a different layer thickness than one or more other of the sublayers.The barrier thin-film layer 108 or the individual sublayers of the barrier thin-film layer 108 can be formed as a translucent or transparent layer, according to one configuration. In other words, the barrier thin film 108 (or the individual sublayers of the barrier thin film 108) may consist of a translucent or transparent substance (or a substance mixture which is translucent or transparent).According to one configuration, the barrier thin film 108 or (in the case of a layer stack having a plurality of sublayers) one or more of the sublayers of the barrier thin film 108 may include or be formed from one of the following substances: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, and mixtures and alloys thereof. In various examples, the barrier thin film 108 or (in the case of a layer stack having a plurality of sublayers) one or more of the sublayers of the barrier thin film 108 may include one or more high-refractive-index substances, in other words one or more substances having a high refractive index, for example having a refractive index of at least 2.In one configuration, the cover 126, for example made of glass, can be applied for example by means of a frit connection (glass frit bonding / glass soldering / seal glass bonding) by means of a conventional glass solder in the geometrical edge regions of the organic optoelectronic component 100 having the barrier thin layer 108.In various examples, an anti-reflective layer 128 may be formed on or over the barrier film 108, wherein the anti-reflective layer 128 may have a refractive index in a range from about 1.5 to about 5.5 and a thickness in a range from about 1 μm to about 100 μm. In one embodiment, the anti-reflective layer 128 may include a material having an intrinsic refractive index in a range from about 1.5 to about 2.5. The at least one type of additive can be formed and distributed in the matrix, for example, in such a way that the average refractive index of matrix and additive material is increased in a range from approximately 1.5 to approximately 2.5. In one configuration, the matrix can have at least one further type of additives, wherein the at least one further type of additives scatter electromagnetic radiation, absorb UV radiation, convert the wavelength of electromagnetic radiation, color the antireflection layer and / or can bind harmful substances.In one embodiment, the type of additive material that can bind harmful substances (getter) may be formed in a separate layer on or over the barrier thin film 108. This layer can also be referred to as a getter layer, for example the getter layer 204, 404, wherein the getter layer comprises a getter or is formed therefrom. A getter layer comprising a getter may comprise, for example, a getter matrix in which the getter is distributed.The anti-reflective layer 128 and the getter may be formed on or over the carrier 102 and / or on or over the barrier film 108.FIGS. 2 to 6 show various exemplary embodiments and comparative examples of an optoelectronic component having a getter layer in order to illustrate different configurations for the position of a getter layer in the layer cross section.By means of separated antireflection layer 128 and getter layer, efficient coupling-out of light or coupling-in of light from or into the organic functional layer structure can be realized, for example if the getter layer cannot be formed with high refractive power and with sufficient scattering effect, for example by means of dispersed scattering particles, without comparable outlay with respect to the formation of antireflection layer 128.In various embodiments, an adhesive and / or a protective varnish 124 can be provided on or above the barrier thin film 108, by means of which, for example, a cover 126 (for example a glass cover 126, a metal foil cover 126, a sealed plastic foil cover 126) is fastened, for example adhesively bonded, on or on the barrier thin film 108, for example has physical contact with the antireflection layer 128 and / or the getter layer.In various exemplary embodiments, an outer barrier layer may be formed on or above the cover 126 (not illustrated), for example according to one of the configurations of the barrier layer 104 and / or the barrier thin layer 108.In various exemplary embodiments, the optically translucent layer made of adhesive and / or protective varnish 124 may have a layer thickness of greater than 1 μm, for example a layer thickness of a plurality of μm. In various embodiments, the adhesive may comprise or be a lamination adhesive.In various exemplary embodiments, light-scattering particles can also be embedded in the layer of the adhesive (also referred to as adhesive layer), which particles can lead to a further improvement in the color angle distortion and the coupling-out efficiency. In various exemplary embodiments, the light-scattering particles provided may be, for example, dielectric scattering particles such as, for example, metal oxides such as, for example, silicon oxide (SiO2), zinc oxide (ZnO), zirconium oxide (ZrO2), indium tin oxide (ITO) or indium zinc oxide (IZO), gallium oxide (Ga2Oa), aluminum oxide, or titanium oxide. Other particles may also be suitable provided they have a refractive index which is different from the effective refractive index of the matrix of the translucent layer structure, for example air bubbles, acrylate, or hollow glass spheres. Furthermore, for example, metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like can be provided as light-scattering particles.In various exemplary embodiments, an electrically insulating layer (not shown) may also be applied between the second electrode 114 and the layer of adhesive and / or protective varnish 124, for example SiN, for example with a layer thickness in a range from approximately 300 nm to approximately 1.5 μm, for example with a layer thickness in a range from approximately 500 nm to approximately 1 μm, in order to protect electrically unstable substances, for example during a wet chemical process.In various embodiments, the adhesive may be configured to itself have a refractive index that is less than the refractive index of the cover 126. Such an adhesive may be, for example, a low refractive index adhesive such as an acrylate having a refractive index of about 1.3. In one configuration, an adhesive can be, for example, a high-refractive adhesive which has, for example, high-refractive, non-scattering particles and has an average refractive index which corresponds approximately to the average refractive index of the organically functional layer structure, for example in a range from approximately 1.7 to approximately 2.0. Furthermore, a plurality of different adhesives can be provided, which form an adhesive layer sequence.It should also be noted that in various exemplary embodiments, an adhesive 124 can also be completely dispensed with, for example in configurations in which the cover 126, for example made of glass, is applied to the barrier thin-film layer 108 by means of, for example, plasma spraying.FIGS. 2 a, b show schematic cross-sectional views of optoelectronic components, according to various embodiments.The schematic cross-sectional view in FIG. 2 shows an exemplary embodiment of an optoelectronic component according to one of the configurations of the description of FIG. 1-characterized by the cutout 100 in the cross-sectional view 200.The carrier 102, the first electrode 110, the organic radio signal layer structure 112, the second electrode 114, the barrier thin film 108 and the antireflection layer 128 may be formed according to one of the configuration of the descriptions of FIG. 1.The getter layer 204 may comprise a getter matrix and at least one type of getter, for example a zeolite. The getter matrix may be formed similar to a configuration of the adhesive layer 124 of the descriptions of FIG. 1.The barrier layer 206 or the protective layer 206 can be formed according to one of the configurations of the barrier layer 104 and / or the barrier thin-film layer 108 of the description FIG. 1.The carriers 208 of the outer barrier layer 206 may be formed according to one of the configurations of the cover 126 of the description of FIG. 1.FIG. 2 ashows a schematic layer cross section of an exemplary embodiment of an optoelectronic component according to various configurations.A first electrode 110 may be formed on or over the carrier 102. An organic functional layer structure 112 may be formed on or above the first electrode 110. A second electrode 114 may be formed on or above the organic functional layer structure 112. A barrier thin film 108 may be formed on or over the second electrode 114.In the schematically illustrated embodiment, the barrier thin-film layer 108 may be formed in a structured manner such that the barrier thin-film layer 108 at least partially surrounds, for example completely surrounds together with the carrier 102, the first electrode 110, the organic functional layer structure 112 and the second electrode 114. In one configuration, the barrier thin-film layer 108 can be unstructured and additionally be formed in a planar manner on or above the carrier 102 without an electrically active region 106 (not illustrated).The planar region of the carrier 102 with electrically active region 106 can also be referred to as optically active region 212. The planar region of the optoelectronic component on or above the carrier 102 without organic functional layer structure 112 can also be referred to as an optically inactive region 214.An anti-reflective layer 128 may be formed on or over the barrier film 108.The antireflection layer 128 can be formed in such a way that the antireflection layer 128 at least partially surrounds, for example completely surrounds, together with the carrier 102, the first electrode 110, the organic functional layer structure 112, the second electrode 114 and the barrier thin-film layer 108.A getter layer 204 may be formed on or over the anti-reflective layer 128.The getter layer 204 may be formed in such a way that the getter layer 204 at least partially surrounds, for example completely surrounds, together with the carrier 102, the first electrode 110, the organic functional layer structure 112, the second electrode 114, the barrier thin layer 108 and the antireflection layer 128.An outer barrier layer 206 may be formed on or over the getter layer 204. The outer barrier layer 106 can also be referred to as a protective layer 206, for example.The getter layer 204 may be configured to absorb moisture which may penetrate through the outer barrier layer 206, for example, via the geometric edge of the optoelectronic component.The outer barrier layer 206 may be formed such that the moisture diffusion into the getter layer 204 is reduced, so that the amount of diffused-in water can be permanently bound by the getter of the getter layer 204.A cover 208 may be formed on or over the outer barrier layer 206. The cover 208 may also be configured as a carrier 208 or substrate 208 of the outer barrier layer 06.In one configuration, the outer barrier layer 206 can be formed on or above the cover 208 and can be bonded to the getter layer 204 in a materially bonded manner, for example by the getter layer 204 comprising an adhesive.In one configuration, the cover 208 with outer barrier layer 206 can be designed as a barrier film and can be laminated onto the getter layer 204, for example.In one configuration, the cover 208 with outer barrier layer 206 may include or be formed from an intrinsically hermetically sealed substance with respect to at least one harmful substance (for the optically active region), for example a ceramic, a metal and / or a metal oxide, for example in the form of a film, for example a metal film.The cover 208 with outer barrier layer 206 may prevent direct, full-surface contact of ambient moisture with the getter layer 204.Since the amount of the area of the side surfaces of the getter layer 04 is small with respect to the planar dimension of the getter layer 204, the direct contact of ambient moisture with the getter layer by the side surfaces of the getter layer 204 can be relatively small, so that the penetrating moisture can be permanently absorbed by the getter.In one configuration, the getter layer 204 may be formed in such a way that the getter layer 204 has a smaller layer thickness in the edge region of the optoelectronic component, for example in the optically inactive region 214, than in the optically active region 212. As a result, the direct contact of the getter layer 204 with ambient moisture can be reduced.The getter layer 204 and the outer barrier layer 206 may reduce the amount of water, i.e. moisture, that reaches the barrier thin layer 108, i.e. both layers in combination may lead to a relief of the actual barrier, i.e. the barrier thin layer 108, with respect to diffusing-in harmful substances. This allows a reliable flexible encapsulation to be realized.In one configuration, however, the cover 208 and / or the outer barrier layer 206 may also be optional.FIG. 2 b shows an example of an optoelectronic component according to various configurations, wherein an antireflection layer 210 is formed on or above the barrier thin-film layer 108, wherein the antireflection layer 210 comprises a getter as additional material.The antireflection layer 210 with getter additive material can be formed in such a way that the antireflection layer 210 with getter additive material at least partially surrounds the first electrode 110, the organic functional layer structure 112, the second electrode 114 and the barrier thin-film layer 108, for example completely surrounds them together with the carrier 102.FIGS. 3 a, b show schematic cross-sectional views of optoelectronic components, according to various embodiments.The type of configuration shown in FIG. 3 can also be referred to as the cover side.The carrier 102, the first electrode 110, the organic radio signal layer structure 112, the second electrode 114, the barrier thin film 108 and the antireflection layer 128 may be formed according to one of the configurations of the descriptions of FIG. 1 or 2.The getter layer 204 may be formed according to a configuration of the adhesive layer 124 of the description of FIG. 1 and / or the antireflection layer 210 of the description of FIG. 2, wherein the getter layer 204 comprises a getter matrix and at least one type of getter.The outer barrier layer 206 or the protective layer 206 can be formed according to one of the configurations of the barrier layer 104 and / or the barrier thin layer 108 of the description FIG. 2.The carriers 208 of the outer barrier layer 206 may be formed according to one of the configurations of the cover 126 of the description of FIG. 1.FIG. 3 ashows a schematic layer cross section of an exemplary embodiment of an optoelectronic component, similar to a configuration of the optoelectronic component of FIG. 2 a. Additionally, the outer barrier layer 206 may surround the side surfaces of the getter layer 204.In other words: in one configuration, the outer barrier layer 206 may be formed such that the barrier layer 206 completely surrounds the first electrode 110, the organic functional layer structure 112, the second electrode 114 and the barrier thin film 108, the antireflection layer 128, 210 and / or the getter layer 204 together with the carrier 102.FIG. 3 b shows a schematic layer cross section of an exemplary embodiment of an optoelectronic component, similar to a configuration of the optoelectronic component of FIG. 3 a.In an embodiment, the cover 208 may be formed on or over the outer barrier layer 206 as a scratch guard 302. The scratch protection 302 can be configured such that the optically active region 212 and the optically inactive region 214 are protected from mechanical damage, for example as a metal foil, a glass foil or a plastic foil. In an embodiment as scratch protection 302, covering the outer barrier layer 206 may not be optional.FIGS. 4 a- d show schematic cross-sectional views of optoelectronic components, according to various comparative examples.Illustrated in FIGS. 4 a- dare comparative examples of an optoelectronic component according to various configurations, wherein a getter layer 404 and an antireflection layer 128 may be formed between the carrier 102 and the organic functional layer structure 112. This type of configuration can also be referred to as the substrate side and may be necessary, for example, if the substrate has diffusion channels, for example with respect to water and / or oxygen.The carrier 102, the first electrode 110, the organic functional layer structure 112, the second electrode 114, the barrier thin film 108 and the antireflection layer 128 may be formed according to one of the configuration of the descriptions of FIGS. 1-3.According to one configuration of the descriptions of FIG. 1, a barrier layer 104 may be formed on or above the carrier 102.In one configuration, a getter layer 404 can be formed on or above the barrier layer 04, wherein the getter layer 404 can be formed, for example, similar to one of the configurations of the getter layer 204 of the descriptions of FIG. 2.In a comparative example-illustrated in FIG. 4 a-a second protective layer 402 can be formed on or above the getter layer 404, wherein the second protective layer 402 can be formed similar to one of the configurations of the first protective layer 206.In one configuration, however, the second protective layer 402 may also be optional.The antireflection layer 128 can be formed on or above the second protective layer 402 according to one configuration of the description of FIG. 1, wherein the antireflection layer 128 is formed at least partially in the optically active region.The organic functional layer structure 106 may be formed on or over the antireflection layer 128. The barrier thin-film layer 108 can be formed on or above the organic functional layer structure 106, wherein the barrier thin-film layer 108 can at least partially surround the organic functional layer structure 106 and the antireflection layer 128, for example can completely surround them together with the carrier 102.In a comparative example-illustrated in FIG. 4 b-the antireflection layer 128 can be formed on or above the getter layer 404 in such a way that the getter layer 404 surrounds the antireflection layer 128 at least partially, for example at least partially from below, at least partially laterally and / or at least partially from above, for example completely.In other words: the antireflection layer 128 can be formed in a getter layer 404 in one configuration, for example partially or completely surrounded by a getter layer 404.In one embodiment, the second protective layer 402 may be formed on or over the anti-reflective layer 128 and the getter layer 404.In a further comparative example, similar to the exemplary embodiment of FIG. 4 b, the second protective layer 402 can be structured in such a way that the second protective layer 402 is formed substantially in the optically inactive region 214 - illustrated in FIG. 4 c.In other words, the organic functional layer structure 106 may be formed in physical contact with the antireflection layer 128. The barrier thin film 108 and the second protective layer 402 may be formed in such a way that the surface of the optoelectronic component, for example an optically active side of the optoelectronic component, is partially or completely encapsulated.In a further comparative example-illustrated in FIG. 4 d-the antireflection layer 128 can be formed on or over the second protective layer 402, similar to a comparative example in FIG. 4 a, and the second protective layer 402 can be structured-similar to a comparative example in FIG. 4 c,in such a way that a third protective layer 406 is formed on or over the antireflection layer 128.In other words: the barrier thin film 108, the second protective film 402 and the third protective film 406 can be formed in such a way that the surface of the optoelectronic component, for example an optically active surface, is at least partially surrounded, for example encapsulated, by the organic functional layer structure 106, the antireflection layer 128 and / or the getter layer 404.FIGS. 5 a- c show schematic cross-sectional views of optoelectronic components, according to various embodiments.Illustrated in FIGS. 5 a- care exemplary embodiments of an optoelectronic component according to various configurations, wherein the optoelectronic component may comprise getter in a planar manner, on both sides of the organic functional layer structure 106. This type of configuration can also be referred to as both sides.The carrier 102, the first electrode 110, the organic functional layer structure 112, the second electrode 114, the barrier thin film 108 and the antireflection layer 128 may be formed according to one of the configurations of the descriptions of FIG. 1.The getter layers 204, 404 can be formed according to a configuration of the adhesive layer 124 of the description of FIG. 1 and / or the antireflection layer 210 of the description of FIG. 2, wherein the getter layer 204, 404 comprises a getter matrix and at least one type of getter.The barrier layer 104, the protective layer 206, the second protective layer 402, and the barrier thin layer 108 may be formed according to embodiments of the barrier thin layer 108 of the description FIG. 1, wherein the barrier layer 104, the first protective layer 206, and the second protective layer 402 may be optional.The carriers 208 of the outer barrier layer 206 may be formed according to one of the configurations of the cover 126 of the description of FIG. 1.According to one configuration of the descriptions of FIG. 1, a barrier layer 104 may be formed on or above the carrier 102. A getter layer 404 can be formed on or above the barrier layer 104, wherein the getter layer 404 can be formed, for example, similar to one of the configurations of the getter layer 204 of the descriptions of FIG. 2.In one exemplary embodiment, the optoelectronic component may have a first getter layer 204 and a second getter layer 404-illustrated in FIG. 5 a.In other words: a plurality of getter layers 204, 404 can be formed in the beam path of the optically active region 212.In one exemplary embodiment, the optoelectronic component may have a second antireflection layer 502 at least partially in the optically active region 212 of the optoelectronic component, wherein the second antireflection layer 502 may be configured, for example, in a similar manner to the first antireflection layer 128 or in a similar manner to the antireflection layer 210 with getter additives.In other words, a plurality of antireflection layers 128, 502 can be formed in the beam path of the optically active region 212.In an exemplary embodiment-illustrated in FIG. 5 c-the optoelectronic component can have-similar to an embodiment of the descriptions of FIG. 4 c-a first antireflection layer 128, which is surrounded at least partially by a second getter layer 404, for example, and a second antireflection layer 502, which is surrounded at least partially by a first getter layer 204, for example.FIG. 6 shows different embodiments of a conventional optoelectronic component.A first electrode 604 may be formed on or over a carrier 602. An organic functional layer structure 606 may be formed on or above the first electrode 604. A second electrode 608 can be formed on or above the organic functional layer structure 606. An encapsulation layer 610 may be formed on or over the second electrode 608.The encapsulation layer 610 may be formed such that the barrier thin film 612 together with the carrier 602 completely surrounds the first electrode 604, the organic functional layer structure 606 and the second electrode 608 and is additionally formed in a physical contact on or above the carrier 602 - illustrated in FIG. 6 a.In a further conventional optoelectronic component-illustrated in FIG. 6 b-the encapsulation layer 610 may be structured such that the encapsulation layer 610 together with the carrier 602 completely surrounds only the first electrode 604, the organic functional layer structure 606 and the second electrode 608.In various embodiments, an optoelectronic component and a method for producing an optoelectronic component are provided, with which it is possible to increase the proportion of electromagnetic radiation that can be absorbed or provided by the optoelectronic component with a getter layer.A getter layer may have an average refractive index that is smaller than the average refractive index of the organic functional layer structure, may have no scattering effect and / or may have no integration possibility for optical lenses. As a result, a significant proportion of the electromagnetic radiation provided can be reflected, for example totally reflected, at an interface / s of the getter layer. The reflected portion of the electromagnetic radiation cannot then be coupled into the optoelectronic component, for example in the case of organic solar cells or organic sensors, or can be coupled out of the optoelectronic component, for example in the case of an organic light-emitting diode.By means of an antireflection layer in the beam path of the optically active region and of the getter layer, the proportion of reflected electromagnetic radiation can be reduced. The antireflection layer can, for example, comprise a substance or be formed therefrom, as a result of which the antireflection layer has a high average refractive index, for example a higher average refractive index than the getter layer. In addition, the antireflection layer can have a scattering effect, for example by means of structuring the boundary surfaces, for example the surface, for example similar to an optical lens.

Claims

Optoelectronic component (100), comprising a layer stack having an optically active region (212) and an optically inactive region (214), the layer stack comprising: • an organic functional layer structure (112), wherein the organic functional layer structure (112) is applied on or above a carrier (102) and is configured for receiving and / or providing electromagnetic radiation; • an antireflection / getter layer structure arranged in the beam path of the organic functional layer structure (112), which comprises: ◯ a getter layer (204, 210, 404) comprising getter material, which has a lower average refractive index than the average refractive index of the organic functional layer structure (112), wherein the getter layer (204, 210, 404) has a first thickness in the optically active region and a second thickness in the optically inactive region, wherein the second thickness is smaller than the first thickness, and wherein the getter layer (204, 210, 404) surrounds the organic functional layer structure (112) at least partially laterally; and ◯ an antireflection layer (128, 502), wherein material of the antireflection layer in the beam path of the organic functional layer structure (112) is arranged at least partially between the organic functional layer structure (112) and the getter layer (204, 210, 404), and wherein the material of the antireflection layer (128, 502) arranged between the organic functional layer structure (112) and the getter layer (204, 210, 404) has an average refractive index which is greater than the refractive index of the getter material and / or has at least one scattering additive material distributed in a matrix of the antireflection layer (128, 502), wherein the getter layer (204, 210, 404) surrounds the antireflection layer (128, 502) at least partially laterally.Optoelectronic component (100) according to Claim 1, wherein the organic functional layer structure (112), the getter layer (204, 210, 404) and / or the antireflection layer (128, 502) are / is formed to be translucent and / or transparent.Optoelectronic component (100) according to one of claims 1 to 2, further comprising: a first electrode (110) and a second electrode (114), wherein the organic functional layer structure (112) is arranged electrically between the electrodes (110, 114).Optoelectronic component (100) according to any of claims 1 to 3, further comprising: at least one barrier thin film (104, 108) between the organic functional layer structure (112) and the getter layer (204, 210, 404).Optoelectronic component (100) according to one of Claims 1 to 4, wherein the getter material is contained in a getter matrix of the getter layer (204, 210, 404).Optoelectronic component (100) according to one of Claims 1 to 5, wherein the optically inactive region lies in the edge region of the optoelectronic component.Optoelectronic component (100) according to any one of claims 1 to 6, further comprising: a protective layer (206, 402) on or above the antireflection layer (128, 502), wherein the protective layer (206, 402) at least partially laterally surrounds the organic functional layer structure (112), the antireflection layer (128, 502) and / or the getter layer (206, 402).Optoelectronic component (100) according to one of claims 1 to 7, further comprising: at least two antireflection / getter layer structures, wherein the at least two antireflection / getter layer structures are arranged on or above the same side or on or above different sides of the organic functional layer structure (112).Method for producing an optoelectronic component, the method comprising forming a layer stack, comprising: • applying an organic functional layer structure (112) on or above a carrier (102), wherein organic functional layer structure (112) is formed for receiving and / or providing electromagnetic radiation; • forming an antireflection / getter layer structure in the beam path of the organic functional layer structure (112), the antireflection / getter layer structure comprising: - a getter layer (204, 210, 404) having a getter material which has a lower average refractive index than the organic functional layer structure (112); and - an antireflection layer (128, 502), wherein material of the antireflection layer (128, 502) is formed in the beam path of the organic functional layer structure (112) at least partially between the organic functional layer structure (112) and the getter layer (204, 210, 404), and wherein the material of the antireflection layer (128, 502) arranged between the organic functional layer structure (112) and the getter layer (204, 210, 404) has an average refractive index which is greater than the average refractive index of the getter material and / or has at least one scattering additive material distributed in a matrix of the antireflection layer (128, 502); • wherein the getter layer (204, 210, 404) is formed in an optically active region having a first thickness and in an optically inactive region having a second thickness, wherein the second thickness is smaller than the first thickness, wherein the getter layer (204, 210, 404) surrounds the organic functional layer structure (112) at least partially laterally, and wherein the getter layer (204, 210, 404) surrounds the antireflection layer (128, 502) at least partially laterally.Method according to Claim 9, wherein the organic functional layer structure (112), the getter layer (204, 210, 404) and / or the antireflection layer (128, 502) are / becomes translucent and / or transparent.Method according to either of Claims 9 and 10, wherein the optoelectronic component (100) is formed as an organic optoelectronic component.Method according to one of Claims 9 to 11, wherein the optoelectronic component (100) is formed as an organic solar cell (100) or an organic light-emitting diode (100).The method of any of claims 9 to 12, further comprising: forming a first electrode (110) and a second electrode (114), wherein the organic functional layer structure (112) is electrically formed between the electrodes; and forming at least one barrier film (104, 108) between the organic functional layer structure (112) and the getter layer (204, 210, 404).The method according to any one of claims 9 to 13, wherein the antireflection layer (128, 502) is formed such that the amount of the average refractive index of the antireflection layer (128, 502) is greater than the amount of the average refractive index of the organic functional layer structure (112).

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