Optoelectronic component and method for manufacturing an optoelectronic component

Abstract

Optoelectronic device (100) comprising: • a support (102); • a protective layer (106) on or over the support (102); • a first electrode (110) on or over the protective layer (106); • an organic functional layer structure (112) on or over the first electrode; and • a second electrode (114) on or over the organic functional layer structure (112); wherein the support (102) comprises or is formed from a soda-lime silicate glass, wherein the protective layer (106) comprises UV-absorbing particles (902, 1202) formed as scattering particles in a matrix with glass such that the protective layer (106) has a lower transmission than the support (102) for electromagnetic radiation with a wavelength of less than approximately 400 nm (506) at least in one wavelength range, and wherein the protective layer (106) has a thickness in the range of 1 µm to 100 µm, wherein one type of UV-absorbing particle (902,1202) comprises or is formed from a mixture or stoichiometric compound of the group consisting of: TiO2, CeO2, Bi2O3, ZnO, SnO2, phosphors: Ce3+-doped garnets such as YAG:Ce and LuAG, Eu3+-doped nitrides, sulfides, sialon, orthosilicates, chlorosilicates, chlorophosphates, BAM (barium magnesium aluminate:Eu) and halophosphate, glass particles, metallic nanoparticles, wherein the phosphors exhibit absorption of electromagnetic radiation in the UV range.

Description

In various embodiments, an optoelectronic component and a method for producing an optoelectronic component are provided.An organic light emitting diode (OLED) on a carrier has an organic functional layer structure between a first electrode and a second electrode, wherein the first electrode is in contact with the carrier and an encapsulation layer can be deposited on or above the second electrode. A current flow between the electrodes leads to the generation of electromagnetic radiation in the organic functional layer system. Light emitting diodes of this type are known, for example, from DE 10 2008 031 533 A1, EP 0 809 420 B1, WO 2005 / 083 813 A2, WO 2009 / 083 693 A2, WO 2009 / 134 211 A1, WO 2011 / 089 343 A1, WO 2012 / 007 575 A1, WO 2012 / 017 183 A1. The publication US 2005 / 008297 A1 describes OLED structures having a barrier layer and stress relief. The publication US 2005 / 0116245 A1 relates to a hermetically sealed glass package and a method for its production.The organic constituents of organic components, for example organic optoelectronic components, for example an OLED, are frequently sensitive to UV radiation (electromagnetic radiation having a wavelength below about 400 nm) of daylight, since this radiation can lead to aging or degradation of the organic constituents, for example by breaking chemical bonds, for example of C-O-O-H at 270-290 kJ / mol (E 380nm-400nm about 290-305 kJ / mol) and / or crosslinking.A conventional method for protecting organic optoelectronic components from UV radiation is the application of UV-radiation-absorbing (UV-absorbing) plastic films to the substrate glass or the transparent cover glass depending on the light exit side.With the applied UV-absorbing plastic film, the optoelectronic component has a plastic surface instead of a glass surface. As a result, the valence of the appearance of the optoelectronic component can be reduced.Furthermore, conventional plastic films are more sensitive to mechanical damage to the surface, for example scratches, than glass, which can have an interfering effect on the optics and the coupling out of light.Furthermore, by means of the application of the UV-absorbing plastic film, for example by means of lamination, a further process step is required in the production of the optoelectronic component, as a result of which the process flow can be extended.The invention relates to an optoelectronic component according to claim 1 and to a method for producing an optoelectronic component according to claim 8.In various embodiments, an optoelectronic component and a method for producing an optoelectronic component are provided, with which it is possible to protect an optoelectronic component having a protective layer with respect to electromagnetic radiation having a wavelength below approximately 400 nm.In the context of this description, an organic substance can be understood to mean a compound of carbon which, irrespective of the respective state of aggregation, is present in chemically uniform form and is characterized by characteristic physical and chemical properties. Furthermore, in the context of this description, an inorganic substance can be understood to mean a compound which is present in chemically uniform form, irrespective of the respective state of aggregation, is characterized by characteristic physical and chemical properties and is not carbon or is a simple carbon compound. In the context of this description, an organic-inorganic substance (hybrid substance) can be understood to mean a compound, irrespective of the respective state of aggregation, present in chemically uniform form and characterized by characteristic physical and chemical properties, with connecting parts which contain carbon and are free of carbon. In the context of this description, the term "substance" comprises all the substances mentioned above, for example an organic substance, an inorganic substance, and / or a hybrid substance. Furthermore, in the context of this description, a substance mixture can be understood to mean what constituents consist of two or more different substances, the constituents of which are very finely distributed, for example. A substance class is understood to mean a substance or a substance mixture of one or more organic substance(s), one or more inorganic substance(s) or one or more hybrid substance(s). The term "material" can be used interchangeably with the term "substance".In various embodiments, an optoelectronic component is provided, the optoelectronic component having: a carrier, a protective layer on or above the carrier, a first electrode on or above the protective layer, an organic functional layer structure on or above the first electrode, and a second electrode on or above the organic functional layer structure, wherein the protective layer has UV-absorbing particles in a matrix with glass such that the protective layer has a lower transmission than the carrier for electromagnetic radiation having a wavelength of less than 400 nm at least in a wavelength range, and wherein the protective layer has a layer thickness in a range from 1 μm to 100 μm. The lower UV transmission of the protective layer with UV-absorbing particles with respect to the carrier and / or the matrix can be formed, for example, by means of a higher absorption and / or reflection and / or scattering of UV radiation by means of the UV-absorbing particles. Clearly, a special glass which has a lower transmission with respect to electromagnetic radiation with a wavelength of less than approximately 400 nm at least in a wavelength range than the carrier, for example a carrier glass, can thus be provided as protective layer in various embodiments with UV protection characteristics. As will be explained in more detail below, such a special glass can also be provided with additional particles which likewise have UV-absorbing properties and can additionally scatter light in the visible wavelength range as scattering particles.In one configuration, the carrier can be configured to be planar.The carrier comprises or is formed from a soft glass.The soft glass is soda-lime silicate glass.In another configuration, the protective layer may have a layer of a molten glass solder powder on or above the carrier or be formed therefrom, wherein the molten glass solder layer has an intrinsically lower UV transmission than the carrier. By means of the lower UV transmission of the melted glass solder layer, a UV protection for layers can be formed on or over the protective layer. The lower UV transmission of the melted glass solder of the protective layer with respect to the carrier can be formed, for example, by means of a higher absorption and / or reflection of UV radiation.In another configuration, the glass solder powder of the protective layer can comprise a substance or a substance mixture or be formed therefrom from the group of the glass systems: PbO-containing systems: PbO-B 2 O 3, PbO-SiO 2, PbO-B 2 O 3- SiO 2, PbO-B 2 O 3- ZnO 2, PbO-B 2 O 3- Al 2 O 3, wherein the PbO-containing glass solder can also have Bi 2 O 3 ; Bi 2 O 3- containing systems: Bi 2 O 3- B2O3, Bi2O3-B2O3-SiO2, Bi 2 O 3- B 2 O 3- ZnO, Bi 2 O 3- B 2 O 3- ZnO-SiO 2.In another configuration, the Bi-containing protective layer may additionally comprise a substance or a substance mixture from the group of the substances: Al 2 O 3, alkaline earth metal oxides, alkali metal oxides, ZrO 2, TiO 2, HfO 2, Nb 2 O 5, Ta 2 O 5, TeO 2, WO3, MO3, Sb2O3, Ag2O, SnO2, Rare earth oxides.In another configuration, UV-absorbing compounds can be added to the glass as glass components. For example, to increase the UV absorption, substances or substance mixtures comprising Ce, Fe, Sn, Ti, Pr, Eu and / or V compounds can be added as glass mixture constituents to low-melting glasses, for example lead-containing glasses, in the process of the glass melt. The UV absorbing compounds may then be dissolved in the glass as constituents. Following the glass melting process, the glass may be pulverized and then applied to the carrier in the form of coatings. By means of a temperature treatment, glazing of the glass solder powder which has been modified by means of the compounds can form a molten glass solder layer having an intrinsically lower UV transmission. The glass modified with the compounds can be formed as a protective layer with intrinsic UV protection or as a substance mixture of the matrix of the protective layer, to which additional UV-absorbing additives and / or scattering additives can be added.In another configuration, the substance or the substance mixture of the glass solder powder of the protective layer can be liquefied at a temperature up to a maximum of approximately 600° C.In another configuration, the matrix of the protective layer can have a refractive index greater than 1.7.In another configuration, the matrix of the protective layer may be amorphous.In another configuration, the matrix of the protective layer can comprise a substance or substance mixture or be formed therefrom from the group of the glass systems: PbO-containing systems: PbO-B 2 O 3, PbO-SiO 2, PbO-B 2 O 3- SiO 2, PbO-B 2 O 3- ZnO 2, PbO-B 2 O3-Al2O3, wherein the PbO-containing glass solder can also have Bi 2 O 3 ; Bi 2 O 3- containing systems: Bi 2 O 3- B 2 O 3, Bi 2 O 3- B2O3-SiO2, Bi2O3-B2O3-ZnO, Bi 2 O 3- B 2 O 3- ZnO-SiO 2.In another configuration, the Bi-containing protective layer may additionally comprise a substance or a substance mixture from the group of the substances: Al 2 O 3, alkaline earth metal oxides, alkali metal oxides, ZrO 2, TiO 2, HfO 2, Nb 2 O 5, Ta 2 O 5, TeO 2, WO3, MO3, Sb2O3, Ag2O, SnO2, Rare earth oxides.In one embodiment, UV-absorbing additives can be added to the glass of the matrix as glass components. For example, to increase the UV absorption, in the process of the glass melt, low-melting glasses, for example lead-containing glasses, substances or substance mixtures comprising Ce, Fe, Sn, Ti, Pr, Eu and / or V compounds can be added as glass mixture constituents.A process of melting glass can be understood to mean thermal liquefaction, i.e. melting, of a glass. The UV-absorbing additives can be dissolved as a constituent in the glass. Following the glass melting process, the glass can be pulverized, applied in the form of coatings to a carrier and subsequently vitrified by means of a temperature treatment.In another configuration, the substance or the substance mixture of the matrix of the protective layer can be liquefied at a temperature up to a maximum of approximately 600° C.In another configuration, the UV-absorbing additives can comprise an inorganic substance or an inorganic substance mixture or be formed therefrom.In one embodiment, at least one type of UV-absorbing additive can be added to the matrix. In another configuration, one type of UV-absorbing additives may comprise or be formed from a substance or substance mixture or a stoichiometric compound from the group of the substances: TiO 2, CeO 2, Bi 2 O 3, ZnO, SnO 2, phosphors: for example Ce 3+ doped garnets such as YAG:Ce and LuAG, Eu 3+ doped nitrides, sulfides, SIONE, sialon, orthosilicates, chlorosilicates, chlorophosphates, BAM (barium magnesium aluminate:Eu) and / or SCAP, Halophosphate and UV-absorbing glass particles, suitable UV-absorbing metallic nanoparticles, wherein the phosphors have an absorption of electromagnetic radiation in the UV range. For example, UV-absorbing nanoparticles can be added to low-melting glasses in order to increase the UV absorption. The UV-absorbing nanoparticles can have no or a low solubility in the molten glass solder and / or cannot react with it or react only poorly with it. Furthermore, the nanoparticles can lead to no or only a slight scattering of electromagnetic radiation, for example nanoparticles which have a grain size of less than approximately 50 nm, for example of TiO 2, CeO 2, ZnO or Bi 2 O 3, wherein the nanoparticles should be very well dispersed in the glass.In another configuration, one type of UV-absorbing additives can comprise or be formed from a substance or substance mixture or a stoichiometric compound from the group of substances phosphors: for example Ce 3+ doped garnets such as YAG:Ce and LuAG, Eu 3+ doped nitrides, sulfides, SIONE, sialon, orthosilicates, chlorosilicates, chlorophosphates, BAM (barium magnesium aluminate:Eu) and / or SCAP, halophosphate and glass particles, wherein the phosphor or the glass has an absorption in the UV range.In another configuration, the UV-absorbing additives can be as the UV-absorbing particles which comprise or are formed from UV-absorbing glass.The UV-absorbing particles may have an average grain size in a range from about 0.1 μm to about 10 μm, for example in a range from about 0.1 μm to about 1 μm.In another configuration, the UV-absorbing additives may have a layer on or above the carrier in the protective layer with a thickness of about 5 nm to about 10 μm.In another configuration, the UV-absorbing additives of the protective layer can have a plurality of layers one above the other on the carrier, wherein the individual layers are of different design.In another configuration, the average particle size of at least one UV-absorbing additive in the layers of UV-absorbing additives may decrease from the surface of the carrier, it also being possible for the UV-absorbing additives to scatter visible light.In another configuration, the individual layers of the UV-absorbing additives can have a different average particle size and / or a different transmission for electromagnetic radiation with a wavelength of less than approximately 400 nm at least in a wavelength range.In another configuration, the protective layer can be formed with phosphors as UV-absorbing additives at the same time for wavelength conversion of electromagnetic radiation, wherein the phosphors have a Stokes shift and emit incident electromagnetic radiation having a higher wavelength.In another configuration, the matrix can have at least one type of scattering additives, such that the protective layer can additionally form a scattering effect with respect to incident electromagnetic radiation in at least one wavelength range, for example by means of a refractive index different from the matrix and / or a diameter which corresponds approximately to the size of the wavelength of the radiation to be scattered. The scattering effect can also relate to electromagnetic radiation emitted by an organic functional layer system on or above the protective layer, for example in order to increase the coupling-out of light.In another configuration, the light-scattering additives can additionally absorb UV radiation.In another configuration, the protective layer with scattering additives can have a difference in the refractive index of the scattering additives from the refractive index of the matrix of greater than approximately 0.05.In another configuration, the scattering additives can have a curved surface.In another configuration, the geometric shape of the scattering additives can have a geometric shape and / or a part of a geometric shape from the group of the shapes: spherical, aspherical, for example prismatic, ellipsoidal, hollow, compact, plate- or rod-shaped.In one configuration, the scattering additives can be formed as particles, wherein the scattering particles have an average grain size in a range from approximately 0.1 μm to approximately 10 μm, for example in a range from approximately 0.1 μm to approximately 1 μm.In another configuration, the matrix of the protective layer may have a refractive index greater than about 1.7.In another configuration, the matrix of the protective layer may be amorphous.In another configuration, the matrix of the protective layer can comprise a substance or substance mixture or be formed therefrom from the group of the glass systems: PbO-containing systems: PbO-B 2 O 3, PbO-SiO 2, PbO-B 2 O 3- SiO 2, PbO-B 2 O 3- ZnO 2, PbO-B 2 O3-Al2O3, wherein the PbO-containing glass solder can also have Bi 2 O 3 ; Bi 2 O 3- containing systems: Bi 2 O 3- B 2 O 3, Bi 2 O 3- B2O3-SiO2, Bi2O3-B2O3-ZnO, Bi 2 O 3- B 2 O 3- ZnO-SiO 2.In another configuration, the Bi-containing protective layer may additionally comprise a substance or a substance mixture from the group of the substances: Al 2 O 3, alkaline earth metal oxides, alkali metal oxides, ZrO 2, TiO 2, HfO 2, Nb 2 O 5, Ta 2 O 5, TeO 2, WO3, MO_NER #1_, Sb_NER #2_O_NER #2_, Ag2O, SnO 2, rare earth oxides.In one embodiment, UV-absorbing additives can be added to the glass of the matrix as glass components. For example, to increase the UV absorption, in the process of the glass melt, low-melting glasses, for example lead-containing glasses, substances or substance mixtures comprising Ce, Fe, Sn, Ti, Pr, Eu and / or V compounds can be added as glass mixture constituents.A process of melting glass can be understood to mean thermal liquefaction, i.e. melting, of a glass.The UV-absorbing additives can be dissolved as a constituent in the glass. Following the glass melting process, the glass can be pulverized, applied in the form of coatings to a carrier and subsequently vitrified by means of a temperature treatment.In another configuration, the substance or the substance mixture of the matrix of the protective layer can be liquefied at a temperature up to a maximum of approximately 600° C.In another configuration, the scattering additives may comprise an inorganic substance or an inorganic substance mixture or be formed therefrom.In another configuration, one type of scattering additives may comprise a substance or substance mixture or a stoichiometric compound or be formed therefrom from the group of the substances: TiO 2, CeO 2, Bi 2 O 3, ZnO, Al 2 O 3, SiO 2, Y 2 O 3 or ZrO 2.In another configuration, the one type of scattering additives can additionally absorb UV radiation.In another configuration, one type of scattering additives may comprise a substance or substance mixture or a stoichiometric compound or be formed therefrom from the group of the phosphors: for example Ce 3+ doped garnets such as YAG:Ce and LuAG, Eu 3+ doped nitrides, sulfides, SIONE, sialon, orthosilicates, chlorosilicates, chlorophosphates, BAM (barium magnesium aluminate:Eu) and / or SCAP, halophosphate.In another configuration, the protective layer with phosphors can be formed as scattering additives simultaneously for wavelength conversion of electromagnetic radiation, wherein the phosphors have a Stokes shift and emit incident electromagnetic radiation with a higher wavelength.In another configuration, the scattering additives can comprise a glass or be formed therefrom.In another configuration, the scattering additives on or above the carrier in the protective layer may have a layer with a thickness of about 5 nm to about 10 μm.In another configuration, the scattering additives of the protective layer can have a plurality of layers one above the other on the carrier, the individual layers being of different design.In another configuration, in the layers of scattering additives, the average particle size of at least one scattering additive may decrease from the surface of the support.In another configuration, the individual layers of the scattering additives can have a different average particle size and / or a different refractive index for electromagnetic radiation. In another configuration, the material of the matrix can have an intrinsically lower UV transmission than the carrier. By means of the lower UV transmission of the matrix, UV protection for layers can be formed on or over the protective layer. The lower UV transmission of the matrix of the protective layer with respect to the carrier can be formed, for example, by means of a higher absorption and / or reflection of UV radiation. In addition, scattering particles which, for example, do not absorb UV radiation, for example Al 2 O 3, SiO 2, Y 2 O 3 or ZrO 2. can also be added to the matrix. In the event that the UV transmission of the material of the matrix is still too high with respect to a desired UV protection, UV-absorbing additives can also be added to the matrix, for example in addition to the non-UV-absorbing but scattering additives.In another configuration, the scattering additives can also act or be configured as UV-absorbing additives or the UV-absorbing additives can also act or be configured as scattering additives.In another configuration, the protective layer can be formed with phosphors as UV-absorbing additives at the same time for wavelength conversion of electromagnetic radiation, wherein the phosphors have a Stokes shift and emit incident electromagnetic radiation having a higher wavelength.In another configuration, the protective layer can have an average refractive index greater than or approximately equal to the refractive index of further layers in the layer cross section.In another configuration, the protective layer may have a thickness of at least about 1 μm to about 100 μm.In another configuration, the protective layer can be formed as a layer in a section plane of a light-emitting diode.In various embodiments, a method for producing an optoelectronic component is provided, the method comprising: forming a protective layer on or over a carrier, forming a first electrode on or over the protective layer, forming an organic functional layer structure on or over the first electrode, and forming a second electrode on or over the organic functional layer structure, wherein the protective layer is formed with UV-absorbing particles in a matrix with glass such that the protective layer for electromagnetic radiation having a wavelength of less than 400 nm has a lower transmission of electromagnetic radiation than the carrier at least in a wavelength range, wherein the protective layer is formed with a layer thickness in a range from 1 μm to 100 μm.In one configuration of the method, the carrier can be configured to be planar.The carrier comprises or is formed from a soft glass.The soft glass is soda-lime silicate glass.In another configuration of the method, the protective layer can have a layer of a molten glass solder powder on or above the carrier or can be formed therefrom, wherein the molten glass solder layer has an intrinsically lower UV transmission than the carrier. By means of the lower UV transmission of the melted glass solder layer, a UV protection for layers can be formed on or over the protective layer. The lower UV transmission of the melted glass solder of the protective layer with respect to the carrier can be formed, for example, by means of a higher absorption and / or reflection of UV radiation.In another configuration of the method, the glass solder powder of the protective layer can comprise a substance or substance mixture or be formed therefrom from the group of the glass systems: PbO-containing systems: PbO-B 2 O 3, PbO-SiO 2, PbO-B 2 O 3- SiO 2, PbO-B 2 O 3- ZnO 2, PbO-B 2 O 3- Al 2 O 3, wherein the PbO-containing glass solder can also have Bi 2 O 3 ; Bi 2 O 3- containing systems: Bi 2 O 3- B2O3, BiO3-BO3-SiO, Bi 2 O 3- B 2 O 3- ZnO, Bi 2 O 3- B 2 O 3- ZnO-SiO 2.In another configuration, the Bi-containing protective layer may additionally comprise a substance or a substance mixture from the group of the substances: Al 2 O 3, alkaline earth metal oxides, alkali metal oxides, ZrO 2, TiO 2, HfO 2, Nb 2 O 5, Ta 2 O 5, TeO 2, WO3, MO3, Sb2O3, Ag2O, SnO 2, rare earth oxides.In one embodiment of the method, the UV-absorbing additives can be added to the glass as glass components. For example, to increase the UV absorption, in the process of the glass melt, low-melting glasses, for example lead-containing glasses, substances or substance mixtures comprising Ce, Fe, Sn, Ti, Pr, Eu and / or V compounds can be added as glass mixture constituents.A process of melting glass can be understood to mean thermal liquefaction, i.e. melting, of a glass. The UV-absorbing additives can be dissolved as a constituent in the glass. Following the glass melting process, the glass can be pulverized, applied in the form of coatings to a carrier and subsequently vitrified by means of a temperature treatment.In another configuration of the method, the substance or the substance mixture of the glass solder powder of the protective layer can be liquefied at a temperature up to a maximum of approximately 600° C.In another configuration of the method, the protective layer can have a matrix and at least one first type of UV-absorbing additives embedded therein, wherein the UV-absorbing additives reduce the transmission for electromagnetic radiation having a wavelength of less than approximately 400 nm at least in a wavelength range with respect to the matrix and / or the carrier.The lower UV transmission of the protective layer with additives with respect to the carrier and / or the matrix can be formed, for example, by means of a higher absorption and / or reflection and / or scattering of UV radiation by means of the UV-absorbing additives.In another configuration of the method, the matrix of the protective layer can have a refractive index greater than approximately 1.7.In another configuration of the method, the matrix of the protective layer can be formed amorphous.In another configuration of the method, the matrix of the protective layer can comprise a substance or substance mixture or be formed therefrom from the group of the glass systems: PbO-containing systems: PbO-B 2 O 3, PbO-SiO 2, PbO-B 2 O 3- SiO 2, PbO-B 2 O 3- ZnO 2, PbO-B 2 O 3- Al 2 O 3, wherein the glass solder containing PbO can also have Bi 2 O 3 ; Bi 2 O 3- containing systems: Bi 2 O 3- B2O3, Bi2O3-B2O3-SiO2, Bi 2 O 3- B 2 O 3- ZnO, Bi 2 O 3- B 2 O 3- ZnO-SiO 2.In another configuration of the method, the Bi-containing protective layer can additionally comprise a substance or a substance mixture from the group of the substances: Al 2 O 3, alkaline earth metal oxides, alkali metal oxides, ZrO 2, TiO 2, HfO 2, Nb 2 O 5, Ta 2 O 5, TeO 2, WO3, MO3, Sb2O3, Ag2O, SnO 2, rare earth oxides.In one embodiment of the method, UV-absorbing additives can be added to the glass of the matrix as glass components. For example, to increase the UV absorption, in the process of the glass melt, low-melting glasses, for example lead-containing glasses, substances or substance mixtures comprising Ce, Fe, Sn, Ti, Pr, Eu and / or V compounds can be added as glass mixture constituents.A process of melting glass can be understood to mean thermal liquefaction, i.e. melting, of a glass. The UV-absorbing additives can be dissolved as a constituent in the glass. Following the glass melting process, the glass can be pulverized, applied in the form of coatings to a carrier and subsequently vitrified by means of a temperature treatment.In another configuration of the method, the substance or the substance mixture of the matrix of the protective layer can be liquefied at a temperature up to a maximum of approximately 600° C.In another configuration of the method, UV-absorbing additives can comprise an inorganic substance or an inorganic substance mixture or be formed therefrom.Instead of or in addition to the added compounds, UV-absorbing nanoparticles can be added to the low-melting glasses in order to increase the UV absorption.The UV-absorbing nanoparticles can have no or a low solubility in the molten glass solder and / or cannot react with it or react only poorly with it. Furthermore, the nanoparticles can lead to no or only a slight scattering of electromagnetic radiation, for example visible electromagnetic radiation, for example nanoparticles which have a grain size of less than approximately 50 nm, for example of TiO 2, CeO 2, ZnO or Bi 2 O 3, wherein the nanoparticles should be well dispersed in the glass.In another configuration of the method, one type of UV-absorbing additives can comprise or be formed from a substance or substance mixture or a stoichiometric compound from the group of substances phosphors: for example Ce 3+ doped garnets such as YAG:Ce and LuAG, Eu 3+ doped nitrides, sulfides, SIONE, sialon, orthosilicates, chlorosilicates, chlorophosphates, BAM (barium magnesium aluminate:Eu) and / or SCAP, halophosphate, glass particles, wherein the phosphor has an absorption in the UV range.In another configuration of the method, the UV-absorbing additives can comprise particles, UV-absorbing glass or be formed therefrom.In another configuration of the method, the UV-absorbing particles can have an average grain size in a range from approximately 0.1 μm to approximately 10 μm, for example in a range from approximately 0.1 μm to approximately 1 μmIn another configuration of the method, one type of UV-absorbing additives can comprise a substance or substance mixture or a stoichiometric compound or be formed therefrom from the group of the substances: TiO 2, CeO 2, Bi 2 O 3, Y 2 O 3, ZrO 2, SiO 2, Al 2 O 3, ZnO, SnO2, Phosphors: for example Ce 3+ doped garnets such as YAG:Ce and LuAG, Eu 3+ doped nitrides, sulfides, SIONE, sialon, orthosilicates, chlorosilicates, chlorophosphates, BAM (barium magnesium aluminate:Eu) and / or SCAP, halophosphate, glass particles, metallic nanoparticles, wherein the phosphor can have an absorption in the UV range.In another configuration of the method, the UV-absorbing additives can be formed on or above the carrier in the protective layer as a layer having a thickness of approximately 5 nm to approximately 10 μm.In another embodiment of the method, a plurality of layers of UV-absorbing additives can be formed one above the other on the carrier, wherein the individual layers are formed differently.In another configuration of the method, the layers of UV-absorbing additives can be formed in such a way that the average particle size of at least one UV-absorbing additive decreases from the surface of the carrier.In another configuration of the method, the individual layers of the UV-absorbing additives can be formed in such a way that the UV-absorbing additives have a different average particle size and / or a different transmission for electromagnetic radiation having a wavelength of less than approximately 400 nm at least in a wavelength range.In another configuration of the method, the protective layer can be formed with phosphors as UV-absorbing additives simultaneously for wavelength conversion of electromagnetic radiation, wherein the phosphors have a Stokes shift and emit incident electromagnetic radiation with a higher wavelength. In another configuration of the method, at least one type of scattering additives can be formed in the matrix, such that the protective layer can simultaneously form a scattering effect with respect to incident electromagnetic radiation in at least one wavelength range, for example by means of a refractive index different from the matrix and a diameter which corresponds approximately to the size of the wavelength of the radiation to be scattered. The scattering effect can also relate to electromagnetic radiation emitted by an organic functional layer system on or above the protective layer, for example in order to increase the coupling-out of light.In another configuration of the method, at least one scattering additive can have a difference in the refractive index from the refractive index of the matrix of greater than approximately 0.05.In another configuration of the method, the scattering additives can have a curved surface.In another configuration of the method, the geometric shape of the scattering additives can have a geometric shape and / or a part of a geometric shape from the group of the shapes: spherical, aspherical, for example prismatic, ellipsoidal, hollow, compact.In one configuration of the method, the scattering additives can be formed as particles, wherein the scattering particles have an average grain size in a range from approximately 0.1 μm to approximately 10 μm, for example in a range from approximately 0.1 μm to approximately 1 μm.In another configuration of the method, the matrix of the protective layer can have a refractive index greater than approximately 1.7 after the solidification of the protective layer.In another configuration of the method, the matrix of the protective layer can be formed amorphous.In another configuration of the method, the matrix of the protective layer can comprise a substance or substance mixture or be formed therefrom from the group of the glass systems: PbO-containing systems: PbO-B 2 O 3, PbO-SiO 2, PbO-B 2 O 3- SiO 2, PbO-B 2 O 3- ZnO 2, PbO-B 2 O 3- Al 2 O 3, wherein the PbO-containing glass solder can also have Bi 2 O 3 ; Bi 2 O 3- containing systems: Bi 2 O 3- B2O3, Bi2O3-B2O3-SiO2, Bi 2 O 3- B 2 O 3- ZnO, Bi 2 O 3- B 2 O 3- ZnO-SiO 2.In another configuration of the method, the Bi-containing protective layer can additionally comprise a substance or a substance mixture from the group of the substances: Al 2 O 3, alkaline earth metal oxides, alkali metal oxides, ZrO 2, TiO 2, HfO 2, Nb 2 O 5, Ta 2 O 5, TeO 2, WO3, MO3, Sb2O3, Ag2O, SnO 2, rare earth oxides.In one embodiment of the method, UV-absorbing additives can be added to the glass of the matrix as glass components. For example, to increase the UV absorption, in the process of the glass melt, low-melting glasses, for example lead-containing glasses, substances or substance mixtures comprising Ce, Fe, Sn, Ti, Pr, Eu and / or V compounds can be added as glass mixture constituents.A process of melting glass can be understood to mean thermal liquefaction, i.e. melting, of a glass. The UV-absorbing additives can be dissolved as a constituent in the glass. Following the glass melting process, the glass can be pulverized, applied in the form of coatings to a carrier and subsequently vitrified by means of a temperature treatment.In another configuration of the method, the substance or the substance mixture of the matrix of the protective layer can be liquefied at a temperature up to a maximum of approximately 600° C. In another configuration of the method, the scattering additives may comprise an inorganic substance or an inorganic substance mixture or be formed therefrom.In another configuration of the method, one type of scattering additives can comprise a substance or substance mixture or a stoichiometric compound or be formed therefrom from the group of substances: TiO 2, CeO 2, Bi 2 O 3, ZnO.In another configuration of the method, one type of scattering additives may comprise or be formed from a substance or substance mixture or a stoichiometric compound from the group of the phosphors: for example Ce 3+ doped garnets such as YAG:Ce and LuAG, Eu 3+ doped nitrides, sulfides, SIONE, sialon, orthosilicates, chlorosilicates, chlorophosphates, BAM (barium magnesium aluminate:Eu) and / or SCAP, halophosphate.In another configuration of the method, the protective layer with phosphors can be formed as scattering additives simultaneously for wavelength conversion of electromagnetic radiation, wherein the phosphors have a Stokes shift and incident electromagnetic radiation with a higher wavelength is emitted.In another configuration of the method, the scattering additives can comprise or be formed from a UV-absorbing glass, wherein the glass can be formed to be UV-absorbing.In another configuration of the method, the scattering additives can be formed on or above the carrier in the protective layer in such a way that the scattering additives form a layer having a thickness of approximately 5 nm to approximately 10 μm. In another configuration of the method, a plurality of layers of scattering additives can be formed on top of one another on the carrier, the individual layers being of different configuration.In another configuration of the method, the layers of scattering additives can be formed in such a way that the average particle size of at least one scattering additive decreases from the surface of the carrier.In another configuration of the method, the individual layers of the scattering additives can be formed in such a way that the individual layers have a different average particle size and / or a different refractive index for electromagnetic radiation.In another configuration of the method, the material of the matrix can have an intrinsically lower UV transmission than the carrier. By means of the lower UV transmission of the matrix, UV protection for layers can be formed on or over the protective layer. The lower UV transmission of the matrix of the protective layer with respect to the carrier can be formed, for example, by means of a higher absorption and / or reflection of UV radiation.In the event that the UV transmission of the material of the matrix is still too high with respect to a desired UV protection, UV-absorbing additives can also be added to the matrix, for example, in addition to the non-UV-absorbing but scattering additives, for example comprising Al 2 O 3, SiO 2, Y 2 O 3 or ZrO 2. The UV-absorbing additives can also act as scattering additives or be configured.In another configuration of the method, the UV-absorbing additives and / or scattering additives can be formed on or above the carrier and the glass solder powder can be formed on or above the layer of the UV-absorbing additives and / or scattering additives, and the glass can be liquefied in such a way that a part of the liquefied glass flows between the particles of the UV-absorbing additives and / or the scattering additives towards the surface of the carrier in such a way that a part of the liquefied glass still remains above the added particles.The part of the protective layer above the added particles should have a thickness equal to or greater than the roughness of the uppermost layer of the scattering centers without glass, so that at least one smooth surface is formed, i.e. the surface has a low root mean square (RMS) roughness, for example less than 10 nm. The roughness of the uppermost layer of added particles is dependent on the actual size of the added particles, i.e. not only on the average particle size and the concentration of the added particles in the plane parallel to the carrier.The essential aspect of the method is the liquefaction of the glass after the addition of the added particles. As a result, the distribution of the added particles in the UV-absorbing protective layer can be adjusted and a smooth surface of the UV-absorbing protective layer can be formed in a single liquefaction process of the glass, for example tempering process. The production of a suspension or paste from glass particles or with a glass powder is not to be understood in this sense as liquifying, since the appearance of the glass particles is not changed by the suspension.In a further embodiment of the method, the glass powder can be mixed with scattering additives and / or UV-absorbing additives and applied to the carrier as a paste or suspension by screen or stencil printing. After glazing, this can lead to a homogeneous distribution of the additives in the glass matrix.In another configuration of the method, a carrier made of soda-lime silicate glass is used in combination with a glass powder which can be vitrified at temperatures up to a maximum of 600° C., which is to say that the glass powder softens to such an extent that it smoothes.In another configuration of the method, the glass can be designed as a glass powder and can be vitrified at a temperature up to a maximum of approximately 600° C., i.e. the glass powder softens in such a way that it can form a smooth surface. The substance or substance mixture of the carrier, for example soda-lime silicate glass, should be thermally stable at the glazing temperature of the glass powder, i.e. have an unchanged layer cross section.In another configuration of the method, the UV-absorbing added particles can be formed from a suspension or paste in which the added particles are contained, on or over the carrier.Methods for producing layers from suspensions or pastes can be, for example, screen printing, stencil printing, doctor-coating, or else spraying methods.In another configuration of the method, the suspension or paste in which the added particles are contained can comprise liquid evaporating and / or organic constituents in addition to the added particles. These constituents can be different additives, known as additives, for example solvents, binders, for example cellulose, cellulose derivatives, nitrocellulose, cellulose acetate, acrylates and can be added to the added particles or glass particles for adjusting the viscosity for the respective method and for the respective desired layer thickness.Organic additives, which may mostly be liquid and / or volatile, can be removed thermally from the layer, i.e. the layer can be dried thermally. Nonvolatile organic additives can be removed by pyrolysis. An increase in the temperature can thereby accelerate or enable the drying or pyrolysis.In another configuration of the method, the glass particle suspension or glass particle paste can have liquid evaporating and / or organic components, for example binders, in addition to the glass particles or glass powder.In another configuration of the method, the glass particle suspension or glass particle paste and the suspension or paste in which the added particles are contained can have liquid evaporating and / or organic components that are miscible with one another. Thereby, phase separation or precipitation of additives within the dried suspension or paste in which the added particles are contained and the dried glass layer suspension or paste in which the added particles are contained, respectively, can be prevented.In another configuration of the method, the glass particle suspension or paste in which the added particles are contained can be dried on or over the added particles by means of evaporating constituents.In another configuration of the method, by increasing the temperature, the organic constituents (binders) can be substantially completely removed from the dried particle layer and from the dried glass powder layer.In another configuration of the method, by increasing the temperature to a second value, wherein the second temperature is very much greater than the first temperature of the drying, the glass or glass powder can be softened in such a way that it can flow, for example becomes liquid.The maximum amount of the second temperature value for liquifying or glazing the glass powder layer may be dependent on the carrier. The temperature regime (temperature and time) may be chosen such that the carrier does not deform, but the glass solder of the glass powder layer may already have a viscosity such that it may run, i.e. flow, smoothly and a very smooth glassy surface may be formed.The glass of the glass powder layer may have a second temperature, i.e. the glazing temperature, for example below the transformation point of the support, for example of the support glass (viscosity of the support η=10 14,5 dPa·s), and at maximum at the softening temperature (viscosity of the support η=10 7,6 dPa·s) of the support glass, for example below the softening temperature and approximately at the upper cooling point (viscosity of the support η=10 13,0 dPa·s).In another configuration of the method, when using a soda-lime silicate glass as carrier, the glass powder can be vitrified at temperatures up to a maximum of approximately 600° C.In another configuration of the method, at least one continuous glass connection of the carrier to the liquefied glass above the UV-absorbing particles can be formed by means of liquefied glass between the UV-absorbing particles.In another configuration of the method, the carrier can comprise or be formed from soda-lime silicate glass, wherein the temperature for glazing the glass powder or the glass powder layer should be at most a value of approximately 600° C.In another configuration of the method, the surface of the liquefied glass above the UV-absorbing particle layer can be additionally smoothed once again after solidification by means of local heating.In another configuration of the method, the local heating can be formed by means of plasma or laser radiation.In another configuration of the method, the protective layer can be formed as a layer in a section plane of a light-emitting diode.Exemplary embodiments of the invention are illustrated in the figures and are explained in more detail below.They show FIG. 1 shows a schematic cross-sectional view of an organic light emitting diode, according to various embodiments; FIG. 2 shows a flow diagram of a method for producing a protective layer, according to various exemplary embodiments; FIG. 3 shows a schematic cross-sectional view of a protective layer in a method for producing a protective layer after removing nonvolatile organic constituents of the glass layer precursor having glass particles on the surface of a carrier, according to various exemplary embodiments; FIG. 4 is a schematic cross-sectional view of a protective layer in a method for producing a protective layer after liquefaction of a protective layer. glass solder and flowing the glass solder on the surface of the carrier, according to various embodiments; FIG. 5 shows a diagram for transmitting electromagnetic radiation through different structures, according to various exemplary embodiments; FIG. 6 shows a diagram for transmitting electromagnetic radiation through different structures, according to various exemplary embodiments; FIG. 7 shows a diagram for transmitting electromagnetic radiation through different structures, according to various exemplary embodiments; FIG. 8 shows a flow diagram of a method for producing a protective layer, according to various exemplary embodiments; FIG. 9 shows a schematic cross-sectional view of a protective layer in a method for producing a protective layer after removal of nonvolatile organic constituents of a glass layer precursor having glass particles with UV-absorbing additives on the surface of a carrier, according to various exemplary embodiments; FIG. 10 shows a schematic cross-sectional view of a protective layer in the method for producing a protective layer after liquefaction of a glass solder with UV-absorbing additives and decomposition of the glass solder on the surface of, for example, the carrier, according to various exemplary embodiments; FIG. 11 shows a flow diagram of a method for producing a protective layer, according to various exemplary embodiments; FIG. 12 shows a schematic cross-sectional view of a protective layer in the method for producing a protective layer after removing nonvolatile organic constituents of a glass layer precursor having glass particles and a scattering center precursor having scattering centers on the surface of a carrier, wherein the scattering centers may be UV-absorbing, according to various exemplary embodiments; FIG. 13 shows a schematic cross-sectional view of the protective layer 106 in the method for producing a protective layer 1100 according to various embodiments, after liquefying 210 the glass 304 and flowing into the free volume 1206 between the scattering centers 1202, wherein the scattering centers 1202 may also be UV-absorbing, according to various embodiments; and FIG. 14 shows a diagram for transmitting electromagnetic radiation through different structures, according to various exemplary embodiments.In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the figure(s) described. Since components of embodiments may be positioned in a number of different orientations, the direction terminology is for the purpose of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other, unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.In the context of this description, the terms "connected", "connected" and "coupled" are used to describe both a direct and an indirect connection, a direct or indirect connection and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.FIG. 1 shows a schematic cross-sectional view of an organic light emitting diode 100 according to various embodiments.The light-emitting component 100 in the form of an organic light-emitting diode 100 may have a carrier 102. The carrier 102 can serve, for example, as a carrier element for electronic elements or layers, for example light-emitting elements. For example, the carrier 102 can be a glass (soft glass or hard glass, preferably soft glass) or a quartz glass. Furthermore, the carrier 102 can comprise a plastic film or a laminate with one or more plastic films. The carrier 102 can be translucent or even transparent.In various embodiments, the term "translucent" or "translucent layer" can be understood to mean that a layer is transmissive to light, for example to the light generated by the light-emitting component, for example one or more wavelength ranges, for example to light in a wavelength range of visible light (for example at least in a partial range of the wavelength range from 380 nm to 780 nm). For example, the term "translucent layer" in various exemplary embodiments is to be understood to mean that substantially the entire amount of light coupled into a structure (for example a layer) is also coupled out of the structure (for example layer), wherein a portion of the light can be scattered in this case.In various exemplary embodiments, the term "transparent" or "transparent layer" can be understood to mean that a layer is transmissive to light (for example at least in a partial region of the wavelength range from 380 nm to 780 nm), wherein light coupled into a structure (for example a layer) is also coupled out of the structure (for example layer) substantially without scattering or light conversion. Thus, "transparent" in various embodiments is to be considered a special case of "translucent".In the case that, for example, a light-emitting monochrome electronic component or an electronic component limited in the emission spectrum is to be provided, it is sufficient for the optically translucent layer structure to be translucent at least in a partial region of the wavelength range of the desired monochrome light or for the limited emission spectrum.In various exemplary embodiments, the organic light-emitting diode 100 (or else the light-emitting components according to the exemplary embodiments described above or still below) can be configured as a so-called top and bottom emitter. A top and bottom emitter can also be referred to as an optically transparent component, for example a transparent organic light emitting diode.In various embodiments, a barrier layer 104 can optionally be arranged on or above the carrier 102. The barrier layer 104 may include or consist of one or more of the following materials: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, and mixtures and alloys thereof. Furthermore, in various exemplary embodiments, the barrier layer 104 may have a layer thickness in a range from approximately 0.1 nm (one atomic layer) to approximately 5000 nm, for example a layer thickness in a range from approximately 10 nm to approximately 200 nm, for example a layer thickness of approximately 40 nm.Thus, in various embodiments, the protective layer 106 may be formed on or above the barrier layer 104 (or, if the barrier layer 104 is not present, on or above the carrier 102).The protective layer 106 absorbs the UV radiation harmful to the organic functional layer structure 112. This can be realized by means of the composition of the substance or substance mixture of the protective layer 106, for example the glass, or by means of the addition of particles which absorb or reflect UV radiation.In order to increase the coupling-out of light and thus the coupling-out efficiency of the component 100, the protective layer 106 can comprise a high-refractive-index glass (high index) having a refractive index greater than approximately 1.7 and distributed UV-absorbing scattering centers, for example UV-absorbing scattering particles.However, the refractive index of the protective layer 106 should be optically matched to the layer thickness-weighted mean value of the refractive indices of the organic functional layer structure 112 and the transparent electrodes 110, 114.A layer-thickness-weighted refractive index is an average value of the refractive indices of the individual layers weighted with the respective layer thickness fractions.In an embodiment, the protective layer 106 may have a similar refractive index as the first electrode 110 and the organic functional layer structure 112 and greater than about 1.7.The surface of the protective layer 106 should have a low root mean square roughness (RMS), i.e. be very smooth, for example in a range from about 0.1 nm to about 10 nm. Spikes, i.e. discontinuities on the surface with a high aspect ratio and a height of a few 10 nm, should be prevented, since they may lead to problems in the encapsulation and leakage currents during operation of the optoelectronic component.During the production of the optoelectronic component, spikes can lead to abrupt dewetting of the organic layers in the vicinity of the spikes. In the case of a small total thickness of the electrically active region 108 and the multiplicity of method steps for forming the electrically active region 108, the second electrode 114 can be formed by means of the spikes in physical contact with the first electrode 110, i.e. a short circuit can occur.Furthermore, the thin-film encapsulation 116, at a layer thickness of a few 10 nm, can decrosslink layers lying beneath by means of the spikes of the protective layer 106, for example the second electrode 114, in the vicinity of the spikes. As a result, the organic optoelectronic component 100 can no longer be sufficiently protected from external influences, for example diffusing-in chemical substances, for example water and / or oxygen.In order to avoid spikes of the substrate 102 that could penetrate the electrically active region 108, polished glass substrates 102 can be used as the carrier 102.In order to avoid alkali diffusion possibly originating from the substrate glass 102, the substrate 102 can be formed with an SiO 2- barrier layer 104.If an alkali-free or low-alkali glass solder is used for the protective layer 106, it may not be necessary to apply a barrier layer 104.In one configuration, the protective layer 106 can comprise low-melting, high-refractive-index glasses and / or glass solders.Among the low-melting glasses, Bi 2 O 3- containing substance mixtures can have a good absorption of UV radiation and a high refractive index (greater than approximately 1.7), for example: Bi 2 O 3- B 2 O 3, Bi 2 O 3- B 2 O 3- SiO2, Bi2O3-B2O3-ZnO, Bi 2 O 3- B 2 O 3- ZnO-SiO 2.The Bi 2 O 3- containing systems can also have further glass components, for example Al 2 O 3, alkaline earth metal oxides, alkali metal oxides, ZrO 2, TiO 2, HfO 2, Nb 2 O 5, Ta 2 O5, TeO2, WO3, MO3, Sb2O3, Ag2O, SnO 2, and rare earth oxides.A good absorption of UV radiation of a layer can be understood to mean a transmission of electromagnetic radiation having a wavelength of less than approximately 350 nm through this layer up to a maximum of approximately 5%, less than approximately 380 nm, a maximum of approximately 20%, preferably a maximum of approximately 10%. Below approximately 340 nm, the UV radiation is absorbed or reflected by the protective layer to an extent of approximately 100%.In one configuration of the optoelectronic component, the glass of the protective layer 106 can also have a glass solder or be formed therefrom from the group of the PbO-containing glass systems:Examples of the following are examples: PbO-B 2 O 3, PbO-SiO 2, PbO-B 2 O 3- SiO 2, PbO-B 2 O 3- ZnO 2, PbO-B 2 O3-Al2O3, wherein the PbO-containing glass solder can also have Bi2O3.In one embodiment, UV-absorbing compounds can be added to the glass of the matrix as glass components. For example, to increase the UV absorption, in the process of the glass melt, low-melting glasses, for example lead-containing glasses, substances or substance mixtures comprising Ce, Fe, Sn, Ti, Pr, Eu and / or V compounds can be added as glass mixture constituents.A process of melting glass can be understood to mean thermal liquefaction, i.e. melting, of a glass. The UV-absorbing additives can be dissolved as a constituent in the glass. Following the glass melting process, the glass can be pulverized, applied in the form of coatings to a carrier and subsequently vitrified by means of a temperature treatment.The substance or substance mixture of the protective layer can be formed, for example, as pastes on the carrier 102. The pastes can comprise a glass powder, a binder and / or a solvent. The application of the paste to the carrier 102 can be realized, for example, by means of screen printing, stencil printing or a spraying method.By means of a temperature treatment, i.e. by means of increasing the temperature, of the pastes applied to the carrier 102, a liquefaction, for example a glazing, can take place and the protective layer 106 can be formed.In another configuration, the carrier 102 can comprise a soda-lime silicate glass and the glazing temperature of the paste of the protective layer can be in a range from approximately 400° C. to approximately 600° C., for example below the transformation point of the carrier 102, in order to avoid or keep a bending or deformation of the carrier 102 low. The temperature increase can be realized, for example, by means of a furnace, laser sintering or in situ by means of a thermal spraying process.However, the PbO-containing glasses may not have sufficient UV absorption, so that a specific modification of the glasses may be necessary, for example by addition of UV-absorbing additives, for example chemical compounds, in the glass melt of the PbO-containing glasses and / or by addition of UV-absorbing nanoparticles which have no or a low solubility in the glass solder and / or react chemically with it and / or do not lead to significant scattering.In various embodiments, the protective layer 106 may have a thickness of about 1 μm to about 50 μm, for example about 1 μm to about 40 μm, for example 3 μm to about 30 μm, for example 5 μm to about 20 μm.Further specifications of the protective layer 106 can be gathered from the description of FIGS. 2-14.In various exemplary embodiments, the first electrode 110 (for example in the form of a first electrode layer 110) can be applied on or above the protective layer 106. The first electrode 110 (also referred to below as lower electrode 110) may be formed from an electrically conductive material, such as a metal or a conductive transparent oxide (TCO) or a layer stack of a plurality of layers of the same metal or different metals and / or the same TCO or different TCOs. Transparent conductive oxides are transparent conductive materials, for example metal oxides, such as, for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin oxide (ITO). Besides binary metal oxygen compounds, such as ZnO, SnO 2, or In 2 O 3 ternary metal oxygen compounds, such as AlSnO, Zn 2 SnO 4, CdSnO 3, ZnSnO 3, MgIn 2 O 4, GaInO 3, also belong, Zn 2 In 2 O 5 or In 4 Sn 3 O 12 or mixtures of different transparent conductive oxides to form the group of TCOs and can be used in various exemplary embodiments. Furthermore, the TCOs do not necessarily correspond to a stoichiometric composition and can furthermore be p-doped or n-doped.In various embodiments, the first electrode 110 may include a metal; for example, Ag, Pt, Au, Mg, Al, Ba, In, Ag, Au, Mg, Ca, Sm, or Li, as well as compounds, combinations, or alloys of these materials.In various embodiments, the first electrode 110 may be formed by a layer stack of a combination of a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.In various embodiments, the first electrode 110 may provide one or more of the following materials, alternatively or in addition to the above mentioned materials: networks of metallic nanowires and particles, for example of Ag; networks of carbon nanotubes; graphene particles and layers; networks of semiconducting nanowires.Further, the first electrode 110 may include electrically conductive polymers or transition metal oxides or electrically conductive transparent oxides.In various embodiments, the first electrode 110 and the carrier 102 may be formed to be translucent or transparent. In the case that the first electrode 110 is formed from a metal, the first electrode 110 can have, for example, a layer thickness of less than or equal to approximately 25 nm, for example a layer thickness of less than or equal to approximately 20 nm, for example a layer thickness of less than or equal to approximately 18 nm. Furthermore, the first electrode 110 may have a layer thickness of greater than or equal to approximately 10 nm, for example a layer thickness of greater than or equal to approximately 15 nm, for example. In various exemplary embodiments, the first electrode 110 may have a layer thickness in a range from approximately 10 nm to approximately 25 nm, for example a layer thickness in a range from approximately 10 nm to approximately 18 nm, for example a layer thickness in a range from approximately 15 nm to approximately 18 nm.Furthermore, in the case that the first electrode 110 is formed from a conductive transparent oxide (TCO), the first electrode 110 can have, for example, a layer thickness in a range from approximately 50 nm to approximately 500 nm, for example a layer thickness in a range from approximately 75 nm to approximately 250 nm, for example a layer thickness in a range from approximately 100 nm to approximately 150 nm.Furthermore, in the case that the first electrode 110 is formed from, for example, a network of metallic nanowires, for example, Ag, which may be combined with conductive polymers, a network of carbon nanotubes, which may be combined with conductive polymers, or graphene layers and composites, the first electrode 110 may have, for example, a layer thickness in a range from approximately 1 nm to approximately 500 nm, for example a layer thickness in a range from approximately 10 nm to approximately 400 nm, for example a layer thickness in a range from approximately 40 nm to approximately 250 nm.The first electrode 110 can be designed as an anode, i.e. as a hole-injecting electrode, or as a cathode, i.e. as an electron-injecting electrode.The first electrode 110 can have a first electrical terminal to which a first electrical potential (provided by an energy source (not shown), for example a current source or a voltage source) can be applied. Alternatively, the first electrical potential can be applied to the carrier 102 and then indirectly supplied to the first electrode 110 via it. The first electrical potential can be, for example, the ground potential or another predefined reference potential.Furthermore, the electrically active region 108 of the light-emitting component 100 may have an organic electroluminescent layer structure 112 or organic functional layer structure 112 which is or is applied on or above the first electrode 110.The organic electroluminescent layer structure 112 may include one or more emitter layers 118, for example with fluorescent and / or phosphorescent emitters, and one or more hole-conducting layers 120 (also referred to as hole-transport layer(s) 120). In various exemplary embodiments, alternatively or additionally one or more electron-conducting layers 122 (also referred to as electron-transport layer(s) 122) may be provided.Examples of emitter materials that can be used for the emitter layer(s) 118 in the light-emitting component 100 according to various exemplary embodiments include organic or organometallic compounds, such as derivatives of polyfluorene, polythiophene and polyphenylene (e.g. 2- or 2,5-substituted poly-p-phenylenevinylene) and metal complexes, for example iridium complexes, such as blue-phosphorescent FlrPic (bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl)iridium III), green-phosphorescent Ir(ppy) 3( tris(2-phenylpyridine)iridium III), Red phosphorescent Ru (dtb-bpy) 3*2( PF 6) ( tris[4,4'-di-tert-butyl-(2,2')-bipyridine]ruthenium(III) complex), and blue fluorescent DPAVBi (4,4-bis[4-(di-p-tolylamino)styryl]biphenyl), green fluorescent TTPA (9,10-bis[N,N-di-(p-tolyl)amino]anthracene), and red fluorescent DCM2 (4-dicyanomethylene)-2-methyl-6-julolideyl-9-enyl-4H-pyran) as nonpolymeric emitters. Such non-polymeric emitters can be deposited, for example, by means of thermal evaporation. Furthermore, polymer emitters can be used which can be deposited in particular by means of a wet chemical method, such as, for example, a spin coating method (also referred to as spin coating). The emitter materials can be embedded in a matrix material in a suitable manner.It should be noted that other suitable emitter materials are also provided in other embodiments.The emitter materials of the emitter layer(s) 118 of the light-emitting component 100 can be selected, for example, such that the light-emitting component 100 emits white light. The emitter layer(s) 118 can / can have a plurality of emitter materials emitting in different colors (for example blue and yellow or blue, green and red), or alternatively the emitter layer(s) 118 can also be constructed from a plurality of sublayers, such as a blue-fluorescent emitter layer 118 or blue-phosphorescent emitter layer 118, a green-phosphorescent emitter layer 118 and a red-phosphorescent emitter layer 118. The mixing of the different colors can result in the emission of light with a white color impression. Alternatively, it can also be provided that a converter material is arranged in the beam path of the primary emission generated by these layers, which converter material at least partially absorbs the primary radiation and emits a secondary radiation of a different wavelength, so that a white color impression results from a (not yet white) primary radiation as a result of the combination of primary radiation and secondary radiation.The organic electroluminescent layer structure 112 may generally include one or more electroluminescent layers. The one or more electroluminescent layers may comprise organic polymers, organic oligomers, organic monomers, organic small, non-polymeric molecules (small molecules), or a combination of these materials. For example, the organic electroluminescent layer structure 112 may include one or more electroluminescent layers embodied as a hole transport layer 120, such that, for example, in the case of an OLED, an effective hole injection into an electroluminescent layer or an electroluminescent region is enabled. Alternatively, in various embodiments, the organic electroluminescent layer structure 112 may comprise one or more functional layers which is or are embodied as an electron transport layer 122, such that, for example, effective electron injection into an electroluminescent layer or an electroluminescent region is made possible in an OLED. As the material for the hole transport layer 120, for example, tertiary amines, carbazole derivatives, conductive polyaniline, or polyethylenedioxythiophene can be used. In various embodiments, the one or more electroluminescent layers may be embodied as an electroluminescent layer.In various embodiments, the hole transport layer 120 may be applied, for example deposited, on or above the first electrode 110, and the emitter layer 118 may be applied, for example deposited, on or above the hole transport layer 120. In various embodiments, electron transport layer 122 may be applied, for example deposited, on or above emitter layer 118.In various exemplary embodiments, the organic electroluminescent layer structure 112 (i.e. for example the sum of the thicknesses of hole transport layer(s) 120 and emitter layer(s) 118 and electron transport layer(s) 122) may have a layer thickness of at most approximately 1.5 μm, for example a layer thickness of at most approximately 1.2 μm, for example a layer thickness of at most approximately 1 μm, for example a layer thickness of at most approximately 800 nm, for example a layer thickness of at most approximately 500 nm, for example a layer thickness of at most approximately 400 nm, for example a layer thickness of at most approximately 300 nm. In various exemplary embodiments, the organic electroluminescent layer structure 112 can have, for example, a stack of a plurality of organic light emitting diodes (OLEDs) arranged directly one above the other, wherein each OLED can have, for example, a layer thickness of at most approximately 1.5 μm, for example a layer thickness of at most approximately 1.2 μm, for example a layer thickness of at most approximately 1 μm, for example a layer thickness of at most approximately 800 nm, for example a layer thickness of at most approximately 500 nm, for example a layer thickness of at most approximately 400 nm, for example a layer thickness of at most approximately 300 nm. In various embodiments, the organic electroluminescent layer structure 112 may, for example, comprise a stack of two, three or four OLEDs arranged directly one above the other, in which case, for example, the organic electroluminescent layer structure 112 may have a layer thickness of at most approximately 3 μm.The light-emitting component 100 can optionally generally have further organic functional layers, for example arranged on or above the one or more emitter layers 118 or on or above the electron transport layer(s) 122, which serve to further improve the functionality and thus the efficiency of the light-emitting component 100.The second electrode 114 (for example in the form of a second electrode layer 114) can be applied on or above the organic electroluminescent layer structure 112 or optionally on or above the one or more further organic functional layers.In various embodiments, the second electrode 114 may comprise the same materials or be formed therefrom as the first electrode 110, wherein metals are particularly suitable in various embodiments.In various exemplary embodiments, the second electrode 114 (for example in the case of a metallic second electrode 114) can have, for example, a layer thickness of less than or equal to approximately 50 nm, for example a layer thickness of less than or equal to approximately 45 nm, for example a layer thickness of less than or equal to approximately 40 nm, for example a layer thickness of less than or equal to approximately 35 nm, for example a layer thickness of less than or equal to approximately 30 nm, for example a layer thickness of less than or equal to approximately 25 nm, for example a layer thickness of less than or equal to approximately 20 nm, for example a layer thickness of less than or equal to approximately 15 nm, for example a layer thickness of less than or equal to approximately 10 nm.The second electrode 114 may be formed generally similar to or different from the first electrode 110. In various exemplary embodiments, the second electrode 114 can be formed from one or more of the materials and with the respective layer thickness, as described above in connection with the first electrode 110. In various embodiments, the first electrode 110 and the second electrode 114 are both formed translucent or transparent. Thus, the light-emitting component 100 illustrated in FIG. 1 can be configured as a top and bottom emitter (in other words as a bidirectionally emitting light-emitting component 100). The second electrode 114 can be designed as an anode, i.e. as a hole-injecting electrode, or as a cathode, i.e. as an electron-injecting electrode.The second electrode 114 can have a second electrical terminal, to which a second electrical potential (which is different from the first electrical potential), provided by the energy source, can be applied. The second electrical potential can have, for example, a value such that the difference from the first electrical potential has a value in a range from approximately 1.5 V to approximately 20 V, for example a value in a range from approximately 2.5 V to approximately 15 V, for example a value in a range from approximately 3 V to approximately 12 V.An encapsulation 116, for example in the form of a barrier thin-film / thin-film encapsulation 116, can optionally also be formed on or above the second electrode 114 and thus on or above the electrically active region 108.A "barrier thin film" or a "barrier thin film" 116 can be understood in the context of this application to mean, for example, a layer or a layer structure which is suitable for forming a barrier with respect to chemical contaminants or atmospheric substances, in particular with respect to water (moisture) and oxygen. In other words, the barrier thin-film layer 116 is formed in such a way that it cannot be penetrated, or at most to very small proportions, by OLED-damaging substances such as water, oxygen or solvent.According to one configuration, the barrier thin film 116 may be formed as a single layer (in other words, as a single layer). According to an alternative configuration, the barrier thin-film layer 116 can have a plurality of partial layers formed on top of one another. In other words, according to one configuration, the barrier thin-film layer 116 can be formed as a layer stack (stack). The barrier thin film 116 or one or more sublayers of the barrier thin film 116 may be formed, for example, by means of a suitable deposition method, e.g. by means of an atomic layer deposition (ALD) method according to one configuration, e.g. a plasma enhanced atomic layer deposition (PEALD) method or a plasmaless atomic layer deposition (PLALD) method, or by means of a chemical vapor deposition (CVD) method according to another configuration, For example, a plasma enhanced chemical vapor deposition (PECVD) method or a plasma less chemical vapor deposition (PCVD) method, or alternatively, by other suitable deposition methods.Very thin layers can be deposited by using an atomic layer deposition (ALD) method. In particular, layers can be deposited whose layer thicknesses are in the atomic layer range.According to one configuration, in the case of a barrier thin-film layer 116 which has a plurality of sublayers, all sublayers can be formed by means of an atomic layer deposition method. A layer sequence which only has ALD layers can also be referred to as a "nanolaminate".According to an alternative configuration, in the case of a barrier thin-film layer 116 which has a plurality of sublayers, one or more sublayers of the barrier thin-film layer 116 can be deposited by means of a deposition method other than an atomic layer deposition method, for example by means of a vapor deposition method.The barrier thin film 116 may have a film thickness of about 0.1 nm (an atomic layer) to about 1000 nm, for example, a film thickness of about 10 nm to about 100 nm according to one configuration, for example, about 40 nm according to one configuration, according to one configuration.According to a configuration in which the barrier thin-film layer 116 comprises a plurality of sublayers, all sublayers may have the same layer thickness. According to another configuration, the individual sublayers of the barrier thin-film layer 116 may have different layer thicknesses. In other words, at least one of the sublayers may have a different layer thickness than one or more other of the sublayers.The barrier thin-film layer 116 or the individual sublayers of the barrier thin-film layer 116 can be formed as a translucent or transparent layer, according to one configuration. In other words, the barrier thin film 116 (or the individual sublayers of the barrier thin film 116) may consist of a translucent or transparent material (or a material combination that is translucent or transparent).According to one configuration, the barrier thin film 116 or (in the case of a layer stack having a plurality of sublayers) one or more of the sublayers of the barrier thin film 116 may include or consist of one of the following materials: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, and mixtures and alloys thereof. In various embodiments, the barrier thin film 116 or (in the case of a layer stack having a plurality of sublayers) one or more of the sublayers of the barrier thin film 116 may comprise one or more high-refractive-index materials, in other words one or more materials having a high refractive index, for example having a refractive index of at least 2.On or above the barrier thin-film layer 116, an adhesive and / or a protective varnish 124 can be provided, by means of which, for example, a cover 126 (for example a glass cover 126) is fastened, for example adhesively bonded, to the barrier thin-film layer 116. In various exemplary embodiments, the optically translucent layer made of adhesive and / or protective varnish 124 may have a layer thickness of greater than 1 μm, for example a layer thickness of a plurality of μm. In various embodiments, the adhesive may comprise or be a lamination adhesive.In various exemplary embodiments, light-scattering particles can also be embedded in the layer of the adhesive (also referred to as adhesive layer), which particles can lead to a further improvement in the color angle distortion and the coupling-out efficiency. In various exemplary embodiments, the light-scattering particles provided may be, for example, dielectric scattering particles such as, for example, metal oxides such as, for example, silicon oxide (SiO 2), zirconium oxide (ZrO 2), aluminum oxide, or titanium oxide. Other particles may also be suitable provided they have a refractive index which is different from the effective refractive index of the matrix of the translucent layer structure, for example air bubbles, acrylate, or hollow glass spheres. Furthermore, for example, metallic nanoparticles, metals such as gold, silver, iron nanoparticles, or the like can be provided as light-scattering particles. In various exemplary embodiments, an electrically insulating layer (not shown) may also be applied between the second electrode 114 and the layer of adhesive 124 and / or protective varnish 124, for example SiN, for example with a layer thickness in a range from approximately 300 nm to approximately 1.5 μm, for example with a layer thickness in a range from approximately 500 nm to approximately 1 μm, in order to protect electrically unstable materials, for example during a wet chemical process.In various embodiments, the adhesive may be configured to itself have a refractive index that is less than the refractive index of the cover 126. Such an adhesive may be, for example, a low refractive index adhesive such as an acrylate having a refractive index of about 1.3. Furthermore, a plurality of different adhesives can be provided, which form an adhesive layer sequence.It should also be noted that in various exemplary embodiments, an adhesive 124 can also be dispensed with completely, for example in embodiments in which the cover 126, for example made of glass, is applied to the barrier thin-film layer 116 by means of, for example, plasma spraying.In various embodiments, the cover 126 and / or the adhesive 124 may / may have a refractive index (for example at a wavelength of 633 nm) of 1.55.Furthermore, in various exemplary embodiments, one or more anti-reflection layers (for example combined with the encapsulation 116, for example the thin-film encapsulation 116) may additionally be provided in the light-emitting component 100.FIG. 2 shows a flow diagram 200 of a method for producing a protective layer 106, according to various embodiments.The illustration shows the preparation of a carrier 202, application of a glass layer precursor 204, drying of the glass layer precursor 206, removal of nonvolatile organic constituents from the glass layer (debindering) 208, liquefaction of the glass layer precursor 210 or liquefaction (yellowing) of the glass powder layer 210, solidification of the glass 212 and adjustment of the surface properties 214, it being possible for the adjustment of the surface properties 214 to be optional.Preparing 202 the carrier, for example a soda-lime silicate glass with a refractive index of about 1.5, can comprise, for example, applying a barrier layer 104, for example SiO 2, cleaning the surface of the carrier 102 or of the barrier layer 104, or adjusting the surface roughness or chemical groups on the surface 302 of the carrier 102 or of the barrier layer 104.After preparing 202 the carrier 102, a glass layer precursor 204 can be applied to the carrier 102, for example by screen printing or stencil printing, for example using a glass powder suspension or glass powder paste, which can comprise a powder of bismuth borate glass particles or bismuth borosilicate glass particles, having, for example, a refractive index in a range between approximately 1.7 and approximately 2.1.The glass powder suspension or glass powder paste can comprise a commercially available screen printing medium (e.g. nitrocellulose in ethyl acetate or cellulose derivatives in glycol ethers).The bismuth borate glass particles or bismuth borosilicate glass particles may have, for example, a grain size distribution D50of about 1 μm and a thermal expansion coefficient of about 8.5·10 -61 / K for the temperature range of about 50° C. to about 350° C. Alternatively, it is also possible to select, for example, bismuth zinc borate glass particles or bismuth zinc borosilicate glass particles having a grain size distribution D50of about 7 μm and a thermal expansion coefficient of about 10·10 -61 / K for the temperature range from about 50° C. to about 300° C.After applying 204 the glass layer precursor 310, the method may include drying 206 the glass layer precursor 310, for example at 70° C. for 3 hours, in order to remove volatile constituents.After drying 206 the glass layer precursor 310, the non-volatile organic constituents in the dried glass layer precursor 310 can be thermally removed by removing non-volatile organic constituents 208, for example by pyrolysis. The screen printing medium should be chosen such that the debindering is complete before the glass powder softens. Since the bismuth borosilicate glass used can begin to soften from about 500° C., the two binder-solvent systems mentioned above are well suited for this glass, since they can burn out already between about 200° C. and about 400° C., depending on the system.After removing the non-volatile organic constituents 208, the liquefaction 210 of the glass layer precursor 310 can take place.In the case of the above-mentioned bismuth borosilicate glass as glass powder layer 310, the glazing can take place at temperatures above approximately 500° C.In the example of a soda-lime silicate glass as carrier 102 with an upper cooling temperature of approximately 550° C., the upper temperature limit can have a value of approximately 600° C. in order to keep deformation of the carrier low or to avoid deformation, depending on the heating method. During glazing, the viscosity of the glass layer precursor 304 or of the glass particles 306 is reduced. As a result, the glass layer precursor 304 or the glass particles 306 can form a protective layer 106 on the surface 302 of the carrier 102. This process is also referred to as glazing. If the glazing takes place below the transformation temperature of the carrier 102 or carrier glass 102, then no thermal stresses are incorporated therein. The thermal expansion coefficient of the two composite partners, i.e. of the carrier 102 and of the glass solder 306, should not differ too much in order to avoid excessively strong composite stresses between the carrier 102 and the protective layer 106 and thus ensure a permanent connection.Since the protective layer 106 can act similar to a barrier layer, a barrier thin layer 104 could be dispensed with, for example if the glass matrix 312 is alkali-free.By means of the glazing, the thickness of the protective layer 106 can be reduced with respect to the thickness of the glass layer precursor 304 by filling the interstices 308 between the glass particles 306, for example to a thickness of approximately 10 μm.After the liquefaction of the glass layer precursor 210 and the formation of a glass layer, the glass 306 can be consolidated 212, for example by means of cooling, for example passively cooled. By means of the consolidation 212 of the glass 306, the protective layer 106 can be formed.After the solidification 212 of the protective layer 106, the surface property 214 of the protective layer 106 can be adjusted, for example polishing, i.e. smoothing of the surface 402 of the protective layer 106, for example by means of short-term local increase of the temperature, for example by means of directed plasmas, for example as fire polishing or also as laser polishing.FIG. 3 shows a schematic cross-sectional view of a protective layer 106 in a method for producing a protective layer 200 after removing nonvolatile organic constituents 206 of a glass layer precursor 304 having glass particles 306 on the surface 302 of a carrier 102, according to various embodiments.By removing 206 non-volatile organic constituents of the glass layer precursor 304, a free volume 308 may be formed between the glass particles 306. The precursor layer 304 describes the applied layers of the glass particles 306 with or without volatile and / or nonvolatile organic constituents.FIG. 4 shows a schematic cross-sectional view of the protective layer 106 in the method for producing a protective layer 200 according to various embodiments, after liquefaction 210 or solidification 212 of the glass solder 306 and decomposition on the surface 302 of the carrier 102, for example.By means of liquefying 210 the glass solder 306, the free volume 308 between the glass particles 308 can be filled and a smooth, pore-free surface 402 can be formed on the protective layer 106. The formation of the smooth, pore-free surface 402 can also be adjusted only after a treatment 214 of the surface, for example a polishing.The layer cross section of the protective layer 106 shown corresponds, for example, to the layer cross section after solidification 216 of the liquefied glass particles 308 and the formation of the glass layer 408 or the glass matrix 408. The glass 408 may have a free surface 402 and share a common boundary surface 404 with the carrier 102 or the barrier layer 104, respectively.FIG. 5 shows a diagram 500 for transmitting electromagnetic radiation through different structures, according to various exemplary embodiments.In the transmission spectrum 500 in FIG. 5, the transmission 502 of electromagnetic radiation of different wavelengths 504 through a carrier 512 and through the carrier 512 with different protective layers 514, 516, 518 containing Bi 2 O 3- is illustrated. The wavelength range 504 of the electromagnetic radiation can be divided into a visible range 508 that is non-hazardous for organic substances and a harmful UV range 506, wherein the two regions 506, 508 merge into one another, i.e. are separated from one another, at a wavelength of approximately 400 nm by the UV edge 510.Different Bi-containing protective layers 106 may be deposited on a carrier 512 (approximately 1 mm thickness) by means of a printing process of a glass layer precursor 304 and may be formed (glazing) according to the description of FIG. 2. Of the vitrified protective layers 516, 518 with a thickness of approximately 20 μm and 514 with approximately 30 μm, the transmission 502 with respect to incident electromagnetic radiation of different wavelengths 504 can be measured.The uncoated support 512 has a higher transmission in the UV range 506 than the supports with Bi-containing protective layers 514, 516, 518 and thereby has a lower UV protection than the supports with Bi-containing protective layers 514, 516, 518.By selecting the Bi-containing glass and the layer thickness of the protective layer 106, a UV protection for the organic functional layer structure 112 can be formed in a broad range of the harmful wavelengths 506 of the electromagnetic radiation by means of the protective layers 514, 516, 518.FIG. 6 shows a diagram 600 for transmitting electromagnetic radiation through different protective layers, according to various exemplary embodiments.The transmission 502 of electromagnetic radiation of different wavelengths 504 through the carrier 602 and through the carrier 602 with different protective layers 604, 606, 608 containing Bi 2 O 3- is illustrated in the transmission spectrum 600 in FIG. 6. The wavelength range 504 of the electromagnetic radiation can be divided into a visible range 508 that is non-hazardous for organic substances and a harmful UV range 506, wherein the two regions 506, 508 merge into one another, i.e. are separated from one another, at a wavelength of approximately 400 nm by the UV edge 510.In a further configuration, different Bi-containing protective layers 604, 606, 608 can be applied by means of screen printing glass layer precursors 304 to a soft glass substrate 102 ( 602) with a thickness of approximately 0.7 mm and, after the glazing and cooling 212, have a layer thickness of approximately 10 μm, for example.Forming the protective layer 106 from the glass layer precursor 304 can be formed according to the description of FIG. 2.The uncoated support 602 has a higher transmission than the supports with Bi-containing protective layers 604, 606, 608 and thus does not have sufficient UV protection. The supports with Bi-containing protective layers 604, 606, 608, on the other hand, exhibit UV protection. With a thickness of the protective layer of about 10 μm or thinner, a portion of harmful UV radiation may be transmitted through the protective layer 106.FIG. 7 shows a diagram 700 for transmitting electromagnetic radiation through different protective layers, according to various exemplary embodiments.The transmission 502 of electromagnetic radiation of different wavelengths 504 through the carrier 702 and through the carrier 702 with different lead-containing protective layers 704, 706 compared to a bismuth-containing protective layer 708 is illustrated in the transmission spectrum 700 in FIG. 7. The wavelength range 504 of the electromagnetic radiation can be divided into a visible range 508 that is non-hazardous for organic substances and a harmful UV range 506, wherein the two ranges 506, 508 merge into one another, i.e. are separated from one another, from the UV edge 510 at a wavelength of approximately 400 nm.FIG. 7 shows the transmission curves of a soft glass substrate having a thickness of approximately 0.7 mm and of comparable glass carriers having PbO-containing glass layers and Bi-containing glass layers having a thickness of approximately 10 μm.The glass layer precursor 304 made of lead-containing glass, for example of lead borate glass or lead borosilicate glass, can be applied by screen printing to a glass substrate 102 having a thickness of approximately 0.7 mm and, after cooling 212, can be formed to form a layer which is as pore-free and smooth as possible and has a layer thickness of approximately 10 μm, for example.Forming the protective layer 106 from the glass layer precursor 304 can be formed according to the description of FIG. 2.The uncoated carrier 702 has a higher transmission than the carrier with Bi-containing protective layer 708 or the lead-containing protective layers 704, 706 and thus has a lower UV protection than the carrier with Bi-containing protective layer 708 or the lead-containing protective layers 704, 706.The lead-containing protective layers 704, 706 may provide higher UV protection than the carrier 702. However, the lead-containing protective layers 704, 706 may have a lower absorption of UV radiation and thus a lower UV protection than the Bi-containing protective layer 708 at the selected layer thickness.FIG. 8 shows a flow diagram 800 of a method for producing a protective layer 106, according to various embodiments.In one configuration for producing a protective layer 106, UV-absorbing additives 902, for example TiO 2, CeO 2, Bi 2 O 3, ZnO or SnO 2 having an average grain size in a range from about 0.1 to about 1 μm, can be added to the glass solder in order to increase the UV absorption, for example to the glass solder powder 306 in the glass solder powder paste 306, wherein the UV-absorbing additives 902 should be distributed homogeneously in the glass solder powder paste 306. In another configuration for producing a protective layer 106, UV-absorbing additives 902, for example UV-absorbing nanoparticles 902 (not shown), can be added to the glass solder in order to increase the UV absorption, for example to the glass solder powder 306 in the glass solder powder paste, wherein the UV-absorbing additives 902 should be distributed homogeneously in the glass solder powder paste 306.The UV-absorbing nanoparticles 902 may have no or a low solubility in the molten glass solder 306 and / or may not react with it or only react with it poorly. Furthermore, the nanoparticles can lead to no or only a slight scattering of electromagnetic radiation, for example nanoparticles which have a grain size of less than approximately 50 nm, for example made of TiO 2, CeO 2, ZnO or Bi 2 O 3.In another configuration, the UV-absorbing additives 902 (not shown) may include or be formed from a phosphor, wherein the phosphor has an absorption in the UV range 506.In another configuration, the additives 902 may comprise or be formed from a UV-absorbing glass.The UV-absorbing additives 902 made of glass or phosphors can have an average grain size in a range from about 50 nm to about 10 μm, for example in a range from about 0.1 μm to about 1 μm.In addition to absorbing electromagnetic radiation in the UV range 506, the UV-absorbing additives 902 may cause an increase in the light decoupling from the optoelectronic component 100 by means of scattering.In a further embodiment, the glass powder is mixed with at least one type of UV-absorbing additives and applied as a paste or suspension to the carrier 102 by screen or stencil printing. As a result, a homogeneous distribution of the UV-absorbing additives in the glass matrix can be formed after the glazing.The at least one type of UV-absorbing additives may comprise a UV-absorbing additive from the group of the UV-absorbing additives: UV-absorbing particles 902 such as TiO 2, CeO 2, Bi 2 O 3, ZnO or SnO 2 with an average grain size of 0.1-1 μm, nanoparticles 902, phosphor 902 or UV-absorbing glass particles 902; wherein each of the UV-absorbing additives 902 with the glass matrix 306, i.e. the protective layer 106 with UV-absorbing additives 902, has a low transmission of UV radiation than the carrier 102.The glass powder suspension or the glass powder paste with UV-absorbing additives can be applied to the surface 302 after preparing 202 the surface 302 of the carrier 102 or the barrier thin layer 104 (204). Details regarding the further method steps 206, 208, 210, 212, 214 and substances or substance mixtures, for example the glass solder 306, the binder, etc., which are necessary for forming the protective layer 106 can be formed according to the description of FIG. 2.FIG. 9 shows a schematic cross-sectional view of a protective layer 106 in the method for producing a protective layer 800 after removing nonvolatile organic constituents 206 of a glass layer precursor 304 comprising glass particles 306 and UV-absorbing additives 902 on the surface 302 of a carrier 102, according to various embodiments. In the embodiment shown, the glass powder was mixed with at least one type of UV-absorbing additive and applied as a paste or suspension to the carrier 102 by screen or stencil printing. By removing 206 non-volatile organic constituents of the glass layer precursor 304, a free volume 308 may be formed between the glass particles 306. The precursor layer 304 describes the applied layers of the glass particles 306 with or without volatile and / or nonvolatile organic constituents. The UV-absorbing additives 902 are homogeneously mixed with the glass particles 306.FIG. 10 shows a schematic cross-sectional view of the protective layer 106 in the method for producing a protective layer 800 according to various exemplary embodiments, after liquefaction 210 and liquefaction on the surface 302, for example of the carrier 102 or solidification 212 of the glass solder 306 with the UV-absorbing additives 902.By means of liquifying 210 the glass solder 306, the free volume 308 between the glass particles 308 can be filled and a smooth, pore-free surface 402 can be formed on the protective layer 106. The formation of the smooth, pore-free surface 402 can also be adjusted only after a treatment 214 of the surface, for example a polishing.The UV-absorbing additives 902, for example according to the description of FIG. 8, can be distributed, for example homogeneously, in the glass 306 of the protective layer 106 after solidification 212 of the liquefied and flown glass particles 306, i.e. after formation of the protective layer 106.FIG. 11 shows a flow diagram 1100 of a further method for producing a protective layer 106, according to various exemplary embodiments.The illustration shows the preparation of the carrier 202, application of the scattering center precursor 1102, drying of the scattering center precursor 1104, application of the glass layer precursor 204, drying of the glass layer precursor 206, removal of nonvolatile organic constituents from the scattering center layer and the glass layer (debindering) 208, liquefaction of the glass layer precursor 210 or liquefaction (glazing) of the glass powder layer 210, solidification of the glass 212 and adjustment of the surface properties 214, it being possible for the adjustment of the surface properties 214 to be optional. The scattering center precursor may include UV absorbing scattering particles, for example TiO 2, CeO 2, Bi 2 O 3, ZnO or SnO 2 having an average grain size in a range from about 0.1 to about 1 μm, phosphor or non-UV absorbing only scattering particles, for example Al 2 O 3, SiO 2, Y 2 O 3 or ZrO 2 having an average grain size in a range from about 0.1 to about 1 μm.Preparing 202 the carrier, for example a soda-lime silicate glass with a refractive index of about 1.5, can comprise, for example, applying a barrier layer 104, for example SiO 2, cleaning the surface of the carrier 102 or of the barrier layer 104, or adjusting the surface roughness or chemical groups on the surface 302 of the carrier 102 or of the barrier layer 104.After preparing 202 the carrier 102, the scattering center precursor 1102 can be applied to the surface 302 of the carrier 102 or of the barrier layer 104. The application of the scattering center precursor 1102 can comprise, for example, applying a suspension or a paste of scattering centers 1202 and volatile and nonvolatile organic constituents to the surface 302.The essential aspect of the method is the liquefaction of the glass after application of scattering and / or UV-absorbing additives, for example the scattering centers. As a result, the distribution of the scattering additives in the protective layer can be adjusted and a smooth surface of the protective layer can be formed in a single liquefaction process of the glass, for example tempering process. The production of a suspension or paste from glass particles or with a glass powder is not to be understood in this sense as liquifying, since the appearance of the glass particles is not changed by the suspension.In one configuration, the substance or substance mixture of the scattering centers 1202 can have only a slight reduction or no reduction in the UV transmission with respect to the substance of the carrier 102, wherein the substance or substance mixture of the scattering centers 1202 has a substance or a stoichiometric compound thereof or is formed therefrom from the group of the substances: Al 2 O 3, SiO 2, ZrO 2, Y 2 O 3.In a further embodiment, the scattering centers 1202 can comprise or be formed from a UV-absorbing substance or a UV-absorbing substance mixture, for example TiO 2, CeO 2, ZnO, Bi 2 O 3.In another configuration, the scattering centers 1202 may include or be formed from a phosphor which has an absorption in the UV range 506.In another configuration, the scattering centers 1202 may comprise or be formed from a glass, for example glass particles, wherein the glass may additionally be formed as UV-absorbing glass, but does not change or soften during the glazing process.The scattering particles 1202 made of glass or phosphors can have an average grain size in a range from about 50 nm to about 10 μm, for example in a range from about 0.1 μm to about 1 μm.In one embodiment, which is to be considered as non-limiting, a thin screen-printing layer 1204 or scattering center precursor 1204 having a wet layer thickness of, for example, approximately 30 μm can be formed from a screen-printable paste or suspension of oxidic scattering particles 306, for example KRONOS 2056 (TiO 2, d 50= 0,45 μm) or CR10 (Al 2 O 3, d 50= 0,45 μm), and a commercially available screen-printing medium (for example nitrocellulose in ethyl acetate or cellulose derivatives in glycol ethers).After application of the scattering center precursor 1102 by means of volatile solvents, for example in a suspension or paste, the scattering center precursor 1204 is dried 1104. For example, the screen printing layer 1204 may be dried at 70° C. for 3 hours. During the drying 1104, the volatile constituents of the screen printing layer 1204 are removed. However, the screen printing layer 1204 still includes non-volatile organic constituents, such as the binder, which binds the scattering particles to one another and to the carrier and thereby imparts a certain mechanical strength to the layer for subsequent process steps.After drying 1104 the screen printing layer 1204, a glass layer precursor 304 can be applied, for example, by screen printing or stencil printing, for example, using a glass powder suspension or glass powder paste, which can comprise a powder of lead borate glass particles or lead borosilicate glass particles.The glass powder suspension or glass powder paste likewise contains a commercially available screen printing medium (e.g. nitrocellulose in ethyl acetate or cellulose derivatives in glycol ethers). The glass powder print layer 304 can have a wet layer thickness of approximately 30 μm, for example. The lead borate glass particles or lead borosilicate glass particles may have, for example, a refractive index in a range from about 1.7 to about 1.9. The lead borate glass particles or the lead borosilicate glass particles can have, for example, a grain size distribution with a D90<12 μm and a D50<3 μm. The thermal expansion coefficient of the lead borate glass particles or the lead borosilicate glass particles may be, for example, about 7.5·10 -61 / K for the temperature range of about 50° C. to about 400° C., and the thermal expansion coefficient of the support comprising soda-lime silicate glass may be, for example, about 8.5-9·10 -61 / K.The thickness of the glass layer precursor 304 may be such that the total volume of the glass 306 in the glass layer precursor 304 is greater than the free volume between the scattering centers 1206 and the volume of volatile and nonvolatile organics, such as binders, solvents, or, in other words, greater than the total volume of the interstices 1206 between the scattering centers 1202 in the scattering center precursor 1204.The part of the protective layer above the scattering additives should have a thickness equal to or greater than the roughness of the uppermost layer of the scattering and / or UV-absorbing additives, for example UV-absorbing scattering centers, for example light-scattering particles without glass, so that at least one smooth surface is formed, i.e. the surface has a low root mean square (RMS) roughness, for example less than 10 nm. The roughness of the uppermost layer of scattering additives is dependent on the actual size of the scattering additives.After applying 204 the glass layer precursor 304, the method may include drying 206 the glass layer precursor 304, for example at 70° C. for 3 hours, to remove volatiles.After drying 206 the glass layer precursor 304, the non-volatile organics in the dried screen print layer 1204 and the dried glass layer precursor 304 may be thermally removed by removing non-volatile organics 208, for example by pyrolysis.The screen printing medium should be selected such that the debindering is complete before the glass powder 306 softens. Since the lead borosilicate glass used can begin to soften from about 500° C., the two binder-solvent systems mentioned above are well suited for this glass, since they can burn out already between about 200° C. and about 400° C., depending on the system.Removing nonvolatile organics 208 in scattering center precursor 1204 and glass layer precursor 304 may form free volume 1206, 308 in scattering center precursor 1204 and glass layer precursor 310.After removal of the non-volatile organic constituents 208, the liquefaction 210 of the glass layer precursor 304 can take place.In the case of the above-mentioned lead borosilicate glass solder as the glass powder layer 304, the glazing can take place at temperatures above approximately 500° C. In the example of a soda-lime silicate glass as carrier 102 with an upper cooling temperature of approximately 550° C., the upper temperature limit can have a value of approximately 600° C. in order to keep deformation of the carrier low or to avoid deformation, depending on the heating method. During glazing, the viscosity of the glass layer precursor 304 or of the glass particles 306 is reduced. As a result, the glass layer precursor 304 or the glass particles 306 can assume the free volume 1206 between the scattering centers 1202 of the dried screen printing layer 1204. This process is also referred to as glazing. If the glazing takes place below the transformation temperature of the carrier 102 or carrier glass 102, then no thermal stresses are incorporated therein. The thermal expansion coefficient of the two composite partners, i.e. of the carrier 102 and of the glass solder 306, should not differ too much in order to avoid excessively strong composite stresses between the carrier 102 and the protective layer 106 and thus ensure a permanent connection. Since the protective layer 106 can act similar to a barrier layer, a barrier thin-film layer 104 could be dispensed with, for example if the glass matrix 306 is alkali-free.By means of the glazing, the thickness of the protective layer 106 can be reduced with respect to the thickness of the scattering center precursor 1204 and the layer thickness of the glass layer precursor 304, for example to a thickness of approximately 10 μm.After the liquefaction of the glass layer precursor 210 and the inflow of the liquid glass into the space 1206 between the scattering centers 1202, the glass 304 can solidify 212, for example by means of cooling, for example cooled passively. By means of the consolidation 212 of the glass 304, the protective layer 106 can be formed.After the solidification 212 of the protective layer 106, the surface property 214 of the protective layer 106 can be adjusted, for example polishing, i.e. smoothing of the surface 402 of the protective layer 106, for example by means of short-term local increase of the temperature, for example by means of directed plasmas, for example as fire polishing or also as laser polishing.In another configuration, lead borate glass particles or lead borosilicate glass particles can be used for the glass layer precursor 304, which particles have, for example, a grain size distribution with a D90<15 μm and a D50<6 μm. The lead borate glass particles or lead borosilicate glass particles may have a coefficient of thermal expansion of, for example, about 12.5·10 -61 / K. When using this glass, the glazing may be formed at temperatures below about 500°C, since its softening may begin at about 360°C. In a further configuration, lead-free glass particles can also be used for the glass layer precursor 304, which can have a refractive index of, for example, between approximately 1.7 and approximately 2.1. These may be, for example, bismuth borate glass particles or bismuth borosilicate glass particles having a grain size distribution D50of approximately 1 μm and a thermal expansion coefficient of approximately 8.5·10 -61 / K for the temperature range of approximately 50° C. to approximately 350° C. Alternatively, it is also possible, for example, to select bismuth zinc borate glass particles or bismuth zinc borosilicate glass particles having a grain size distribution D50of approximately 7 μm and a thermal expansion coefficient of approximately 10·10 -61 / K for the temperature range of approximately 50° C. to approximately 300° C.The total layer thickness of the scattering particle protective layer may be formed in a range of about 1 μm to about 100 μm.FIG. 12 shows a schematic cross-sectional view of a protective layer 106 in the method for producing a protective layer 1100 after removing nonvolatile organic constituents 206 of a glass layer precursor 304 having glass particles 306 and a scattering center precursor 1204 having scattering centers 1202 on the surface 302 of a carrier 102, wherein the scattering centers 1202 may be UV-absorbing, according to various embodiments.By removing nonvolatile organic constituents of the scattering center precursor 1202 and the glass layer precursor 304, a free volume 1206, 308 may be formed between the scattering centers 1202 and between the glass particles 304. The precursor layers 1204, 304 describe the applied layers of the scattering centers 1204 and glass particles 304 with or without volatile and / or nonvolatile organic constituents.FIG. 13 shows a schematic cross-sectional view of the protective layer 106 in the method for producing a protective layer 1100 according to various embodiments, after liquefying 210 the glass 304 and flowing into the free volume 1206 between the scattering centers 1202, wherein the scattering centers 1202 may also be UV-absorbing, according to various embodiments.The illustrated layer cross section of the protective layer 106 corresponds, for example, to the layer cross section after solidification 212 of the liquefied glass particles 304 and the formation of the glass layer 1302 or the glass matrix 1302. The glass 1302 may have a free surface 1304 and share a common interface 136 with the carrier 102 and the barrier layer 104, respectively. Further, the glass layer 1302 may share a common interface 1308 or multiple common interfaces 1308 with the scattering centers 1202.Electromagnetic radiation can be scattered at the interface 1308 of the glass matrix 1302 with the scattering centers 1202, as a result of which the light decoupling from the optoelectronic component can be increased, wherein the scattering centers 1202 can be UV-absorbing, for example.FIG. 14 shows a diagram 1400 for transmitting electromagnetic radiation through different protective layers, according to various exemplary embodiments.In the transmission spectrum 1400 in FIG. 14, the transmission 502 of electromagnetic radiation of different wavelengths 504 through the carrier 1402 and through the carrier with different protective layers 1404, 1406, 1408, 1410 is illustrated. The wavelength range 504 of the electromagnetic radiation can be divided into a visible range 508 that is non-hazardous for organic substances and a harmful UV range 506, wherein the two regions 506, 508 merge into one another, i.e. are separated from one another, from the UV edge 510 at a wavelength of approximately 400 nm.The transmission of protective layers 106 with TiO 2- scattering centers in a Bi-containing 1408 glass matrix 1302 and a PbO-containing 1406 glass matrix 1302 are shown, which can have been formed, for example, by means of a method according to the description from FIG. 11. The TiO 2- scattering centers are additionally UV-absorbing, i.e. the TiO 2- scattering centers in this embodiment are the UV-absorbing additives 902 and additionally the scattering centers 1202 in one embodiment.In addition, the transmission of a Bi-containing 1404 protective layer 106 and a PbO-containing 1410 protective layer 106 are illustrated, which can have been formed, for example, by means of a method according to the description from FIG. 2.The structures with protective layer 1404, 1406, 1408, 1410 were applied to comparable carriers 102, for example a soft glass substrate 102 with a thickness of approximately 0.7 mm. Therefore, the transmission 1402 of the carrier 102 may be used as a reference value for the structures with protective layer 1404, 1406, 1408, 1410. The protective layers 106 of the illustrated transmissions 1404, 1406, 1408, 1410 may each have a thickness of approximately 10 μm.The uncoated carrier 1402 has a higher transmission and thus a lower UV protection than the carriers 102 with a Bi-containing protective layer 1404, 1408 or a lead-containing protective layer 1406, 1410.The lead-containing protective layers 1406, 1410 may provide higher UV protection than the carrier 1402. However, the lead-containing protective layers 1406, 1410 can have a lower absorption of UV radiation and thus a lower UV protection than the Bi-containing protective layers 1404, 1408 at the selected layer thickness.The UV-absorbing additives 902 may be formed in the protective layer 106 by a method according to the description of FIG. 8 or FIG. 11. By means of the UV-absorbing additives 902, the UV edge 510 can be shifted to the right, i.e. to higher wavelengths 504, as a result of which the UV absorption for the Bi-containing protective layer (1408) and the lead-containing (1410) protective layer 106 was increased compared to those without scattering particles (1404 for Bi-containing and 1410 for Bei-containing).In various embodiments, an optoelectronic component and a method for producing an optoelectronic component are provided, with which it is possible to protect organic optoelectronic components from UV radiation without applying a UV-absorbing plastic film to the outer side of the component. This can prevent the aesthetic appearance of the organic optoelectronic component from being impaired. Furthermore, the process step of applying the plastic film to the optoelectronic component and the film itself can be dispensed with. Furthermore, the UV-absorbing layer can advantageously be formed in such a way that the UV-absorbing particles simultaneously act as scatterers for visible light and the light decoupling of organic optoelectronic components is thereby increased.

Claims

Optoelectronic component (100), comprising: • a carrier (102); • a protective layer (106) on or above the carrier (102); • a first electrode (110) on or above the protective layer (106); • an organic functional layer structure (112) on or above the first electrode; and • a second electrode (114) on or above the organic functional layer structure (112); wherein the carrier (102) comprises or is formed from a soda-lime silicate glass, wherein the protective layer (106) comprises UV-absorbing particles (902, 1202) formed as scattering particles in a matrix with glass such that the protective layer (106) has a lower transmission for electromagnetic radiation having a wavelength of less than approximately 400 nm (506) than the carrier (102), at least in a wavelength range, and wherein the protective layer (106) has a layer thickness in a range from 1 μm to 100 μm, wherein one type of the UV-absorbing particles (902, 1202) comprises a substance mixture or a stoichiometric compound or is formed therefrom from the group of the substances: TiO 2, CeO 2, Bi 2 O 3, ZnO, SnO 2, phosphors: Ce 3+ doped garnets such as YAG:Ce and LuAG, Eu 3+ doped nitrides, sulfides, sialons, orthosilicates, chlorosilicates, chlorophosphates, BAM (barium magnesium aluminate:Eu) and halophosphate, glass particles, metallic nanoparticles, wherein the phosphors have an absorption of electromagnetic radiation in the UV range.Optoelectronic component (100) according to Claim 1, wherein the carrier (102) is configured in a planar manner.Optoelectronic component (100) according to claim 1 or 2, wherein the matrix (306) of the protective layer (106) has a refractive index greater than 1.7.Optoelectronic component (100) according to one of Claims 1 to 3, wherein the matrix (306) of the protective layer (106) is amorphous.Optoelectronic component (100) according to one of Claims 1 to 4, wherein the matrix (306) of the protective layer (106) comprises or is formed from a substance or a substance mixture from the group of the glass systems: PbO-containing systems: PbO-B 2 O 3, PbO-SiO 2, PbO-B 2 O 3- SiO 2, PbO-B 2 O 3- ZnO 2, PbO-B 2 O 3- Al 2 O 3, wherein the glass solder containing PbO can also have Bi 2 O 3 ; Bi 2 O 3- containing systems: Bi 2 O 3- B2O3, Bi2O3-B2O3-SiO2, Bi 2 O 3- B 2 O 3- ZnO, Bi 2 O 3- B 2 O 3- ZnO-SiO 2, wherein this additionally comprises a substance or a substance mixture from the group of the substances: Al 2 O3, alkaline earth oxides, alkali oxides, ZrO2, TiO2, HfO2, Nb 2 O 5, Ta 2 O 5, TeO 2, WO 3, MO 3, Sb 2 O 3, Ag 2 O, SnO2, rare earth oxides.Optoelectronic component (100) according to Claim 5, wherein the substance or substance mixture of the matrix (306) further comprises a substance or is formed therefrom from the group of the substances: Ce, Fe, Sn, Ti, Pr, Eu and / or V compounds.Optoelectronic component (100) according to one of Claims 1 to 6, wherein the optoelectronic component (100) is formed as an organic light-emitting diode (100) or as an organic solar cell (100).A method for producing an optoelectronic component, the method comprising: • forming a protective layer (106) on or over a carrier (102); • forming a first electrode (110) on or over the protective layer (106); • forming an organic functional layer structure (112) on or over the first electrode (110); and • forming a second electrode (114) on or over the organic functional layer structure (112); wherein the carrier (102) comprises or is formed from a soda-lime silicate glass, wherein the protective layer (106) is formed with UV-absorbing particles (902, 1202) formed as scattering particles in a matrix with glass such that the protective layer for electromagnetic radiation having a wavelength of less than approximately 400 nm (506) has a lower transmission of electromagnetic radiation than the carrier (102) at least in a wavelength range, wherein the protective layer (106) is formed with a layer thickness in a range from 1 μm to 100 μm, wherein one type of the UV-absorbing particles (902, 1202) comprises a substance mixture or a stoichiometric compound or is formed therefrom from the group of the substances: TiO 2, CeO 2, Bi 2 O 3, ZnO, SnO 2, phosphors: Ce 3+ doped garnets such as YAG:Ce and LuAG, Eu 3+ doped nitrides, sulfides, sialons, orthosilicates, chlorosilicates, chlorophosphates, BAM (barium magnesium aluminate:Eu) and halophosphate, glass particles, metallic nanoparticles, wherein the phosphors have an absorption of electromagnetic radiation in the UV range.The method of claim 8, wherein forming the protective layer (106) comprises applying a glass solder powder to or over the carrier (102), wherein the glass solder powder (306) is liquefied to form the protective layer (106).Method according to claim 9, wherein at least one type of UV-absorbing compounds is added to the glass solder powder (306) before applying the glass solder powder to the carrier (102).Method according to one of claims 9 or 10, wherein the UV-absorbing particles (902, 1202) are formed as scattering centers (902, 1202) and are applied to or above the carrier (102) and the glass solder powder (306) is applied to or above the layer (1204) of UV-absorbing scattering centers (902, 1202), and the glass (306) is liquefied such that a part of the liquefied glass (306) flows between the scattering centers (1202) towards the surface (1306) of the carrier (302) such that a part of the liquefied glass (306) still remains above the scattering centers (1202).

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