Ion beam source, processing arrangement and method

Abstract

Ion beam source (100a, 100b, 200), comprising: • a cathode (202) and an anode (204) for generating ions in an elongated emission region (211, 213); and • an adhesion-promoting surface element (110h) which is arranged on a surface (204a, 204b, 202o) of the anode (204) and / or the cathode (202); • wherein the adhesion-promoting surface element (110h) adjoins the emission region (211, 213) and has a greater roughness than the surface (204a, 204b, 202o) and / or than 3 µm.

Description

[0001] The invention relates to an ion beam source, a processing arrangement and a method.

[0002] In general, materials or substrates, such as plate-shaped substrates, glass panes, wafers, or other carriers, can be processed, machined, or pretreated using ions. For this purpose, a substrate can be irradiated with an ion beam, which can be generated using an ion beam source and directed onto a surface of a substrate to be machined. The substrate can be etched using the ion beam, for example, in a so-called ion beam etching process, where the ions of the ion beam can sputter substrate material and thus remove (etch) it from the irradiated substrate.

[0003] For irradiating wide substrates (e.g., with a width of more than one meter), an ion beam source can be used that generates an ion beam that can be extended across the entire width of the substrate (e.g., a so-called anode-layer ion beam source can be used). Illustratively, conventional ion beam sources for processing wide substrates can be designed to irradiate large surfaces in a time-efficient manner.

[0004] During ion beam etching, a parasitic coating can form on the ion beam source, whereby material removed from the substrate and / or the ion beam source can be deposited on the ion beam source. The deposited material (parasitic coating) can detach as it becomes thicker, thereby impairing the operation of the ion beam source, e.g., due to short circuits or voltage surges. To ensure trouble-free operation, it may therefore be necessary to frequently clean the ion beam source, which incurs additional costs (e.g., due to production downtime during cleaning).

[0005] Traditionally, the surfaces of the ion beam source that are exposed to the parasitic coating are either not specially treated at all or are roughened using a blasting agent (particle irradiation), which increases the adhesion to the parasitic coating and thus delays its detachment. Intensive particle irradiation can indeed provide a high level of roughness and thus a high degree of adhesion, but at the same time can lead to deformation of the irradiated components, especially if the treatment is only carried out on one side. If the components are protected, i.e., less intensively particle irradiated, the adhesion can only be improved slightly. Since deformation of the components of the ion beam source is difficult to reverse, the lower adhesion is traditionally accepted. The deformation can be problematic because the components, for example,an anode-layer ion source should meet a high level of precision (i.e., have very tight dimensional tolerances). Nevertheless, even gentle particle irradiation for cleaning and subsequent roughening of the ion beam source, which is frequently used, can gradually damage the components of the ion beam source.

[0006] In this regard, reference is made to DE 10 2008 023 248 A1, US 2006 / 0 008 654 A1, US 2007 / 0 051 622 A1 and US 6 130 507 A.

[0007] According to various embodiments, an ion beam source, a processing arrangement, and a method are clearly provided which improve adhesion promotion. Clearly, the surfaces of the ion beam source which are exposed to a parasitic coating (e.g., the surfaces facing the processing region) are covered, e.g., coated, with an adhesion-promoting surface element (e.g., comprising or formed from an adhesion-promoting layer). The adhesion-promoting surface element clearly increases the roughness of the ion beam source, which leads to improved adhesion promotion, and can be gently applied to the components of the ion beam source, i.e., without deforming them. Furthermore, the adhesion-promoting surface element itself can be particle-blasted and / or renewed without damaging the components of the ion beam source.

[0008] According to various embodiments, the coating is carried out using solid particles and / or by means of a thermal spraying process (e.g., thermally treated), which, for example, distributes solid particles on the surface to be coated. The solid particles are clearly deposited on the surface of the ion beam source to be coated, thereby increasing its roughness. Optionally, the solid particles can be at least partially melted and / or activated by means of a plasma (can also be referred to as plasma spraying), which increases their adhesion to the surface of the ion beam source to be coated.

[0009] According to various embodiments, an ion beam source may comprise: a cathode and an anode for generating ions in an elongated emission region; and an adhesion-promoting surface element (e.g. comprising or formed from an adhesion-promoting layer) arranged on a surface (surface to be covered or coated) of the anode and / or the cathode; wherein the adhesion-promoting surface element adjoins the emission region and has a roughness greater than the surface and / or than 3 µm (e.g. an arithmetic mean roughness or R a -value, e.g. spatially averaged).

[0010] The arithmetic mean roughness can be understood as standardized according to DIN EN ISO 4287:2010.

[0011] Optionally, the cathode and / or anode can also be roughened. In this case, the surface can have a roughness greater than 3 µm.

[0012] Roughness achieved by particle blasting (e.g. sandblasting or glass bead blasting) can be limited to less than 3 µm, e.g. if the particle blasting is not intended to deform the cathode and / or anode and / or the treated material is not too soft (e.g. stainless steel).

[0013] According to various embodiments, the adhesion-promoting surface element (e.g. comprising the adhesion-promoting layer or formed therefrom) can have a roughness (e.g. an arithmetic mean roughness, e.g. spatially averaged) that is more than approximately twice as great as the surface, e.g. more than approximately three times as great, e.g. more than approximately four times as great, e.g. more than approximately five times as great, e.g. in a range from approximately twice to approximately ten times as great or more than approximately ten times as great. The greater the roughness, the greater the adhesion of the parasitic coating to the adhesion-promoting surface element (e.g. comprising the adhesion-promoting layer or formed therefrom) can be.

[0014] Alternatively or additionally, the adhesion-promoting surface element (e.g. the adhesion-promoting layer) can have a roughness (e.g. an arithmetic mean roughness, e.g. spatially averaged) of more than approximately 3.5 micrometers (µm), e.g. of more than approximately 3.7 µm, e.g. of more than approximately 3.9 µm, e.g. of more than approximately 4 µm, e.g. of more than approximately 4.5 µm, e.g. of more than approximately 5 µm, e.g. of more than approximately 5.3 µm, e.g. of more than approximately 6 µm, e.g. of more than approximately 10 µm, e.g. of more than approximately 15 µm, e.g. of more than approximately 20 µm, e.g. of more than approximately 30 µm, e.g. of more than approximately 50 µm, e.g. of more than approximately 100 µm. The thinner the adhesion promoting surface element (e.g. the adhesion promoting layer) is, the less it can influence the specified geometry and the specified gap dimensions of the ion beam source.

[0015] Optionally, the surface of the cathode and / or the anode may have a roughness (e.g., an arithmetic mean roughness, e.g., spatially averaged) of more than about 3.5 micrometers (µm), e.g., more than about 3.7 µm, e.g., more than about 3.9 µm, e.g., more than about 4 µm, e.g., more than about 4.5 µm, e.g., more than about 5 µm, e.g., more than about 5.3 µm, e.g., more than about 6 µm, e.g., more than about 10 µm, e.g., more than about 15 µm, e.g., more than about 20 µm, e.g., more than about 30 µm, e.g., more than about 50 µm, e.g., more than about 100 µm.

[0016] According to various embodiments, the cathode may have an emission gap into which the emission region extends and / or is arranged.

[0017] According to various embodiments, the cathode may have a greater magnetic permeability than the anode and / or the adhesion-promoting surface element (e.g., the adhesion-promoting layer). Alternatively or additionally, a magnetic permeability of the adhesion-promoting surface element (e.g., the adhesion-promoting layer) may be substantially equal to or less than the permeability of the anode. Illustratively, the adhesion-promoting surface element (e.g., the adhesion-promoting layer) may have a low (or negligible) magnetic permeability (e.g., approximately 0).

[0018] According to various embodiments, the cathode may comprise a ferromagnetic material (i.e., having a magnetic permeability greater than approximately 1 or much greater than 1, e.g., greater than approximately 5, e.g., greater than approximately 10). Alternatively or additionally, the adhesion-promoting surface element (e.g., the adhesion-promoting layer) and the anode may be approximately equal in their magnetic permeability or have a smaller difference from each other than a value of the permeability of the anode, e.g., a difference from each other of less than approximately 50% of the permeability of the anode, e.g., less than approximately 25% of the permeability of the anode, e.g., less than approximately 10% of the permeability of the anode, e.g., less than approximately 5% of the permeability of the anode. For example, the anode and / or the adhesion-promoting surface element (e.g., the adhesion-promoting layer) may be non-magnetic (i.e.,with a magnetic permeability of essentially 1, ie, with a magnetic permeability of 1 plus or minus 10%). This can ensure that the anode and / or the adhesion-promoting surface element (e.g., the adhesion-promoting layer) interfere less with the magnetic field in the emission gap.

[0019] According to various embodiments, the adhesion-promoting surface element (e.g., the adhesion-promoting layer) can comprise a metal and / or oxygen. For example, the metal (e.g., Al, Ti, or Cr) can comprise a chemical compound with oxygen. Then, the adhesion-promoting surface element (e.g., the adhesion-promoting layer) can comprise a chemical compound of the metal and oxygen or be formed therefrom (e.g., metal oxide). This can increase the stability of the adhesion-promoting surface element (e.g., the adhesion-promoting layer) with respect to a reactive atmosphere (e.g., comprising oxygen).

[0020] According to various embodiments, the adhesion-promoting surface element (e.g., the adhesion-promoting layer) may comprise at least one of the following: aluminum (Al), titanium (Ti), chromium (Cr), an alloy comprising aluminum and / or titanium and / or chromium, an oxygen-to-metal ratio of less than 1 (e.g., less than approximately 0.95, e.g., less than approximately 0.90, e.g., less than approximately 0.8, e.g., less than approximately 0.7, e.g., less than approximately 0.6, e.g., less than approximately 0.5). The metal oxide may, for example, have an oxygen-to-metal ratio of less than 1.

[0021] The metals listed here are only examples and can easily be created as coatings using spraying techniques. Of course, other metals can also be used to create rough coatings.

[0022] If the adhesion-promoting surface element (e.g., the adhesion-promoting layer) comprises a metal oxide or is formed therefrom, it may be necessary to ensure that the layer has at least a residual electrical conductivity or more (e.g., residual electrical conductivity and / or electrical conductivity) and / or has at least a partial layer with a residual electrical conductivity. This can be achieved, for example, by providing or becoming substoichiometrically a chemical composition of the adhesion-promoting surface element (e.g., the adhesion-promoting layer) (e.g., in the case of TiO 2-x ). For TiO 2-x "x" denotes the fraction of unoccupied vacancies. These vacancies can provide charge carriers and / or increase their mobility.

[0023] According to various embodiments, substoichiometric (or substoichiometric chemical composition) can be understood to mean that a body or region (or the material from which they are formed) has vacancies (e.g. oxygen vacancies). A vacancy can be understood as a place in the regular arrangement of atoms, ions or molecules in the crystal lattice that is unoccupied. Substoichiometric can, for example, be understood to mean that more than approximately 0.01% of the places in the crystal lattice are empty (i.e. unoccupied) (corresponds to 0.01% atomic percent vacancies or 0.01% deviation from stoichiometry), e.g. more than approximately 0.1%, e.g. more than approximately 1%, e.g. more than approximately 2% (or 5% or 10), e.g. more than approximately 25%, e.g. more than approximately 50%. In other words, the adhesion promoting surface element (e.g., the adhesion promoting layer) may have more than approximately 0.01 atomic percent (at%) vacancies, e.g.more than approximately 0.1 at% e.g. more than approximately 1 at%, e.g. more than approximately 2 at% (or 5 at% or 10 at%), e.g. more than approximately 25 at%, e.g. more than approximately 50 at%. For example, the crystal lattice can be polycrystalline. Alternatively or additionally, a substoichiometric body or region (or the material from which they are formed) can tend to absorb atoms (e.g. oxygen) from the environment (e.g. in air at atmospheric pressure), e.g. when thermally activated, which atoms can be incorporated into the crystal lattice (i.e. occupy the vacancies). As atoms are incorporated into the crystal lattice, its electrical conductivity can decrease. When a chemically stoichiometric composition is reached, the absorption of atoms can stagnate (illustratively, all vacancies are then occupied, i.e. equilibrium is reached).Clearly, a substoichiometric chemical composition can exhibit greater chemical reactivity than a stoichiometric chemical composition of the same material combination and / or the same crystal structure.

[0024] The less oxygen the adhesion-promoting surface element (e.g. the adhesion-promoting layer) has, the greater the electrical conductivity of the adhesion-promoting surface element (e.g. the adhesion-promoting layer) can be.

[0025] According to various embodiments, a thickness of the adhesion-promoting surface element (e.g., the adhesion-promoting layer) can decrease in a direction away from the emission region. In other words, the adhesion-promoting surface element (e.g., the adhesion-promoting layer) can have a gradient in thickness (e.g., a layer thickness of the adhesion-promoting layer). The thickness or layer thickness of the adhesion-promoting surface element, e.g., the adhesion-promoting layer, (e.g., averaged, e.g., spatially averaged) can be less than approximately 1 mm, e.g., less than approximately 0.5 mm, e.g., less than approximately 0.3 mm, e.g., less than approximately 0.25 mm, e.g., less than approximately 0.1 mm. The adhesion-promoting surface element (e.g., the adhesion-promoting layer) can be or become multilayered. The more layers (individual layers) the multilayered adhesion-promoting surface element (e.g.,The thicker the adhesion promoter layer (the multi-layered adhesion promoter layer), the more gently it can be applied and / or the harder it can be.

[0026] According to various embodiments, at least two individual layers of the adhesion-promoting surface element (e.g., the adhesion-promoting layer) can differ from one another, e.g., by one of the following: their thickness, their electrical conductivity, their mechanical hardness, their chemical composition, and / or their microstructure. Alternatively or additionally, the adhesion-promoting surface element (e.g., the adhesion-promoting layer) can have a gradient, e.g., by one of the following: their thickness, their electrical conductivity, their mechanical hardness, their chemical composition, and / or their microstructure.

[0027] According to various embodiments, the adhesion-promoting surface element (e.g., the adhesion-promoting layer) can be electrically conductive and / or have an electrically conductive surface (or individual layer). This can enable interference-free current transport through the adhesion-promoting surface element (e.g., the adhesion-promoting layer).

[0028] According to various embodiments, the adhesion-promoting surface element may comprise or be formed from at least one of the following: an adhesion-promoting layer; a plate, a sheet, and / or a foil.

[0029] According to various embodiments, the adhesion-promoting surface element (e.g., the adhesion-promoting layer) may have a resistance value (e.g., surface contact resistance and / or specific resistance) which is greater than that of the anode and / or cathode (or the material from which they are formed).

[0030] According to various embodiments, the adhesion-promoting surface element (e.g. the adhesion-promoting layer) can have a surface contact resistance (e.g. at a contact pressure of the measuring electrodes of 150 N / cm 2 or more) less than approximately 100 Ω·cm 2 e.g. less than approximately 50 Ω·cm 2 , e.g. less than approximately 5 Ω·cm 2 , e.g. less than approximately 1 Ω·cm 2 , e.g. less than approximately 0.1 Ω·cm 2 , e.g. less than approximately 50 mΩ·cm 2 , e.g. less than approximately 25 mΩ·cm 2 , e.g. less than approximately 10 mΩ·cm 2 , e.g. less than approximately 5 mΩ·cm 2 , e.g. less than approximately 1 mΩ·cm 2 The lower the surface contact resistance, the more smoothly the current can be transported through the adhesion promoting surface element (e.g. the adhesion promoting layer).

[0031] According to various embodiments, the surface contact resistance can be measured by measuring the resistance of the anode (e.g., a steel anode), especially when the layers are very thin. For example, the measured value can be compared with an uncoated anode to determine the surface contact resistance.

[0032] According to various embodiments, the specific resistance of the layer can be determined alternatively or additionally, e.g., based on the surface contact resistance. For example, a first ion beam source and a second ion beam source, which differ in at least one adhesion-promoting surface element, e.g., an adhesion-promoting layer (e.g., on the anode and / or the cathode) according to various embodiments, can differ from one another in their impedance (during operation, e.g., during the plasma discharge) by less than approximately 5%, e.g., less than approximately 2%, e.g., less than approximately 1%. In other words, the adhesion-promoting surface element (e.g., the adhesion-promoting layer) can be configured such that it causes a change (e.g., increase) in the impedance during operation of the ion beam source by less than 5% (or, respectively, 2% or 1%).

[0033] According to various embodiments, the surface contact resistance (ie the electrical resistance per area A C , also known as ICR value, Interfacial Contact Resistance) by clamping the object to be measured (e.g. the anode) between two planar measuring electrodes (e.g. gold contact plates), which are subjected to a predefined contact pressure (e.g. 150 N / cm 2 or more) against each other. The contact area of ​​the measuring electrodes with the object to be measured can be the area A C The electrical resistance is then measured between the two measuring electrodes, i.e., through the object being measured. In other words, the interface resistance can be measured between opposite sides of the object being measured.

[0034] According to various embodiments, a processing arrangement may comprise: a process chamber for processing a substrate in a processing region of the process chamber; and an ion beam source according to various embodiments for generating an ion beam toward the processing region.

[0035] According to various embodiments, a method for treating an ion beam source having a cathode and an anode may comprise: providing a surface of the cathode and / or the anode, wherein the surface has a first roughness; and applying (may also be referred to as applying) an adhesion-promoting surface element to the surface, which has a second roughness; wherein the second roughness is greater than the first roughness and / or than 3 µm.

[0036] According to various embodiments, the adhesion-promoting surface element may comprise a sheet and / or a foil which is attached to the surface.

[0037] According to various embodiments, the fastening may be performed by means of at least one (one or more) of the following: screwing, gluing, soldering and / or bonding.

[0038] According to various embodiments, the adhesion-promoting surface element can have the second roughness prior to application. For example, the method can further comprise: processing the adhesion-promoting surface element prior to application, wherein the processing results in the second roughness. In other words, the adhesion-promoting surface element can be processed according to the second roughness. Alternatively or additionally, the adhesion-promoting surface element (e.g., a sheet and / or a foil) can have or be formed from an adhesion-promoting layer.

[0039] According to various embodiments, applying the adhesion-promoting surface element may comprise coating the surface with an adhesion-promoting layer having the second roughness.

[0040] According to various embodiments, the coating can be carried out using solid particles, which are exposed to a plasma for coating. Alternatively or additionally, the coating can comprise thermal spray coating.

[0041] According to various embodiments, the adhesion promoting layer may be applied using an electrochemical deposition (may also be referred to as electroplating or electroplating).

[0042] According to various embodiments, the method may further comprise: processing the adhesion-promoting layer after coating to create the second roughness (in other words, the processing may cause the second roughness). In other words, the adhesion-promoting layer may be processed according to the second roughness.

[0043] According to various embodiments, the processing may comprise roughening, e.g. by irradiation with a blasting agent, e.g. by particle irradiation.

[0044] According to various embodiments, the adhesion-promoting surface element can be applied by bonding, soldering or screwing a thin plate, wherein the roughness (surface roughness) of the adhesion-promoting surface element is processed before or after the application according to the second roughness.

[0045] For example, a soft plate (e.g., a metal plate), foil, and / or sheet can be applied and subsequently corundum blasted. Alternatively, the plate (or foil and / or sheet) can be corundum blasted before application, with the plate (or foil and / or sheet) optionally being leveled (e.g., straightened) before application.

[0046] According to various embodiments, a hardness of the adhesion-promoting surface element (e.g., the sheet and / or the foil) may be smaller than a hardness of the cathode and / or the anode.

[0047] According to various embodiments, the application of the adhesion-promoting surface element can be carried out by means of electroplating (can also be referred to as electroplating) a thin layer (can also be referred to as adhesion-promoting layer), the surface roughness of which is processed after application according to the second roughness.

[0048] According to various embodiments, a plate and / or a sheet can be understood as mechanically self-supporting, ie, clearly mechanically stable against gravity (e.g., vertically aligned), ie, capable of supporting its own weight. A foil, on the other hand, can only partially adapt to the shape of the surface to which it is applied under the influence of gravity. Particularly thin sheets (e.g., with a thickness of less than approximately 60 µm) can be referred to as foils according to various embodiments.

[0049] According to various embodiments, the adhesion-promoting surface element may comprise one (ie, one or more) of the following elements (e.g., a laminate thereof): one or more plates, one or more sheets, one or more films, and / or one or more adhesion-promoting layers. At least two of the elements may form a laminate.

[0050] According to various embodiments, a method for treating an ion beam source having a cathode and an anode may comprise: providing a surface of the cathode and / or the anode, wherein the surface has a first roughness; and coating the surface with an adhesion-promoting layer having a second roughness; wherein the second roughness is greater than the first roughness, e.g., more than approximately twice as great, e.g., more than approximately three times as great, e.g., more than approximately four times as great, e.g., more than approximately five times as great, e.g., in a range from approximately twice to approximately ten times as great or more than approximately ten times as great.

[0051] According to various embodiments, the coating can be carried out using solid particles and / or a thermal spraying process, which are exposed to a plasma for coating. Alternatively or additionally, the coating can comprise a thermal spray coating.

[0052] According to various embodiments, the coating can be carried out in multiple layers, e.g. in more than 10 layers, e.g. in more than 50 layers, in more than 100 layers. Alternatively or additionally, each layer can have a thickness in a range from approximately 10 µm to approximately 50 µm, e.g. in a range from approximately 20 µm to approximately 30 µm. Cooling of the surface can take place between the individual layers, e.g. by more than half the temperature (than it has during or immediately after formation of a layer), e.g. to less than approximately 600°C, e.g. to less than approximately 400°C, e.g. to less than approximately 200°C. A layer can have a thickness in a range from approximately 10 µm to approximately 50 µm, e.g. in a range from approximately 20 µm to approximately 30 µm.

[0053] According to various embodiments, the anode and / or the cathode can have a greater mechanical hardness than the adhesion-promoting surface element (e.g. the adhesion-promoting layer), e.g. more than approximately twice as large, e.g. more than approximately three times as large, e.g. more than approximately four times as large, e.g. more than approximately five times as large, e.g. in a range from approximately twice to approximately ten times as large or more than approximately ten times as large. The lower the hardness of the adhesion-promoting surface element (e.g. the adhesion-promoting layer), the easier it is to design and adapt, e.g. by means of particle irradiation, e.g. according to a predetermined roughness.

[0054] According to various embodiments, for example, a sheet or a foil can be applied, which is subsequently particle irradiated (e.g. using corundum particles).

[0055] According to various embodiments, an adhesion-promoting surface element (e.g., a thin sheet and / or foil) can be applied to the anode and / or the cathode. The adhesion-promoting surface element can comprise or be formed from aluminum and / or copper, or another metal that has a lower hardness than the anode (e.g., a stainless steel anode) and / or the cathode.

[0056] The adhesion-promoting surface element (e.g., a thin sheet and / or foil) can be attached to the anode and / or cathode, e.g., bonded, soldered, glued, and / or screwed. For example, the adhesion-promoting surface element can be attached using a so-called "flash bonding process." The flash bonding process can, for example, result in a maximum heating of the anode or cathode of less than 100°C.

[0057] To provide a flash bonding process, the adhesion-promoting surface element (e.g., the adhesion-promoting layer) can comprise a plurality of layers (e.g., a laminate), wherein adjacent layers differ in their chemical composition. The plurality of layers can, for example, comprise a plurality of first layers comprising a first material (e.g., aluminum), and a plurality of second layers comprising a different second material (e.g., nickel). The first layers and the second layers can be arranged alternately. The first material and the second material can be configured such that they chemically react with each other exothermically. If the chemical reaction is initiated at one location, it propagates through the adhesion-promoting surface element (e.g.,the adhesion-promoting layer), which can bring about a material bonding of the plurality of layers to one another and / or a material bonding of the adhesion-promoting surface element (e.g. the adhesion-promoting layer) to a substrate, e.g. the cathode and / or the anode.

[0058] The adhesion-promoting surface element (e.g., a thin sheet and / or foil) can be processed after application to increase its roughness (e.g., roughened, e.g., blasted). For example, subsequent processing (e.g., particle blasting) can achieve a greater roughness than a similar processing of the anode and / or cathode itself. Optionally, deformation during processing can be reduced because the adhesion-promoting surface element of the anode and / or cathode is stabilized (illustratively, for example, because a significantly stiffer stainless steel profile lies underneath). After processing, the adhesion-promoting surface element can exhibit the second roughness.

[0059] Alternatively, or in addition to the processing (e.g., roughening, i.e., to increase the roughness), the adhesion-promoting surface element can be coated with the adhesion-promoting layer. This allows their effects to be combined and enables uncomplicated replacement.

[0060] According to various embodiments, the adhesion-promoting surface element can have a thickness (transverse to the surface dimension) in a range from approximately 0.3 millimeters (mm) to approximately 10 mm, e.g., in a range from approximately 0.5 mm to approximately 2 mm. A greater thickness can cause a bimetallic effect upon cooling after attachment (e.g., a bonding process), which deforms the anode or cathode. A smaller thickness, on the other hand, can better absorb the resulting thermal stresses and thus protect the cathode or anode.

[0061] According to various embodiments, a thickness of the adhesion-promoting surface element (eg the adhesion-promoting layer) may be smaller than a distance of the anode and / or the adhesion-promoting surface element (eg the adhesion-promoting layer) from the cathode, eg smaller than approximately 50% of the distance, eg smaller than approximately 25% of the distance, eg smaller than approximately 10% of the distance, eg in a range from approximately 5% to approximately 50% of the distance.

[0062] If the adhesion promoting surface element (e.g. the adhesion promoting layer) has a greater thickness, the ion beam source can be structurally adjusted so that the original distance is restored.

[0063] According to various embodiments, a thickness of the adhesion-promoting surface element (e.g., the adhesion-promoting layer) can be less than approximately 2 mm (e.g., less than approximately 1 mm, e.g., less than approximately 0.5 mm, e.g., less than approximately 0.25 mm, e.g., less than approximately 0.2 mm, e.g., less than approximately 0.1 mm) and / or greater than approximately 20 µm (e.g., greater than approximately 30 µm, e.g., greater than approximately 50 µm, e.g., greater than approximately 100 µm, e.g., greater than approximately 200 µm, e.g., greater than approximately 500 µm). According to various embodiments, at least one surface of the ion beam source (e.g., the surface of the cathode and / or the anode to be coated with the adhesion-promoting layer or coated with the adhesion-promoting layer) can be or become roughened (also referred to as a roughened surface), e.g.,by sandblasting, by glass bead blasting, by grinding or by etching or by irradiation with another blasting medium, also referred to as particle blasting (for example, the blasting medium can comprise or be formed from a metal oxide such as corundum or metal nitride or a metal carbide or semi-metal carbide such as silicon carbide). The abrasive can have a grain size of, for example, F12 or larger. For example, the roughened surface of the ion beam source can have a roughness that is greater than a roughness of an opposite inner surface of the ion beam source (e.g. the anode or the cathode, e.g. an uncoated surface), e.g. within a cavity in which the anode is arranged.

[0064] For example, the roughened surface may have a mean roughness value (or R a-roughness) of greater than about 0.2 µm, e.g. greater than about 0.5 µm, e.g. greater than about 1 µm, e.g. greater than about 2 µm, e.g. greater than about 5 µm, e.g. greater than about 7.5 µm, e.g. greater than about 10 µm, and / or e.g. in a range from about 0.2 µm to about 20 µm, e.g. in a range from about 1 µm to about 15 µm, e.g. about 12.2 µm.

[0065] For example, by blasting aluminum with corundum, a roughness (Ra value) of approximately 12.2 µm can be achieved. By blasting steel in a similar manner, a lower roughness can be achieved.

[0066] According to various embodiments, an ion beam source may further comprise a magnet arrangement with one or more magnets for generating a magnetic field in the emission region or the emission gap, ie which penetrates the emission region or the emission gap.

[0067] According to various embodiments, an ion beam source may comprise an anode and a cathode for generating and emitting the ion beam. The emission characteristics of the ion beam source may be defined by the shape of the anode and / or the shape of the cathode and / or their relative arrangement to one another.

[0068] The emission characteristics of an ion beam source can be influenced by the location where the ions are created (emission region), as well as the electric and / or magnetic field distribution at the location where the ions are created (generated) in the ion beam source. The electric and / or magnetic field distribution can clearly influence the direction in which ions are emitted. For example, in an ion beam source, a large proportion of the ions can be generated (generated) in an area in the immediate vicinity of the anode (e.g., by means of the cathode), whereby the electric field in this area can be approximately perpendicular to the surface of the anode (anode surface) (e.g., in an anode-layer type ion beam source). Thus, the shape and / or orientation of the anode surface can influence the electric field distribution and thus the emission characteristics.

[0069] The trajectory of the ions generated in the emission region (e.g., at the anode surface) and emitted away from the anode can also be influenced by a magnetic field penetrating the emission region. For example, a cathode can have two cathode poles between which a magnetic field can be applied. Due to the high mass of ions compared to electrons, the magnetic field may have less influence on the trajectory of the ions than, for example, with electrons. The magnetic field may lead to a slight tilt of the beam relative to the normal direction of the anode surface, e.g., with a small velocity component in the racetrack direction (the direction of rotation of the racetrack).

[0070] According to various embodiments, an apparatus for generating an ion beam may comprise a cathode and an anode for generating ions in an emission region; wherein the anode may have an anode surface associated with the emission region, wherein the anode surface defines a main propagation direction (also referred to as emission direction) for the ions generated in the emission region, which is directed away from the anode.

[0071] According to various embodiments, the main propagation direction can be directed substantially perpendicular (e.g., with a tolerance of less than ±5°, e.g., with a tolerance of less than ±2°, e.g., with a tolerance of less than ±1°) to the anode surface. In other words, the normal vector of the anode surface can substantially define the respective main propagation direction. Illustratively, the main propagation direction can denote a direction in which ions emitted into the emission region (the center of gravity of the emitted ions) move away from the anode surface over time.

[0072] The center of gravity of ions (e.g., a plurality of ions or a spatial distribution of ions) of an ion distribution can be described as an average of the ion positions weighted by the mass of the ions in the ion distribution. Analogously, the center of gravity movement can describe the movement of the center of gravity of the plurality of ions over time. For example, the ions provided at a given time in the emission region (at the associated anode surface) can be spatially distributed and form an ion distribution, wherein the ion distribution has a center of gravity that is emitted over time (from that time on) away from the emission region and in the main propagation direction defined by the associated anode surface.In other words, a main propagation direction can correspond to the direction of the average momentum of the ions that are located between the ion beam source and the substrate at a given time (in one of the emission regions) and / or are emitted from it. The momentum of an ion can be defined by its mass, its velocity, and its velocity direction.

[0073] The anode and / or the cathode can comprise or be formed from an electrically conductive material, e.g., a metal (such as copper, iron, aluminum, etc.), a metal alloy (such as steel, brass, bronze, etc.), or a carrier (e.g., an insulating carrier such as a ceramic) with an electrically conductive adhesion-promoting surface element (e.g., comprising or formed from an electrically conductive adhesion-promoting layer). If the anode is water-cooled, for example, corrosion-resistant materials can be used, e.g., copper or (stainless) stainless steel.

[0074] According to various embodiments, the cathode can be (e.g., plate-shaped and) have a gap (emission gap) that partially exposes the anode, e.g., at least the anode surface. The anode surface can be coated with the adhesion-promoting layer. Alternatively or additionally, a surface of the cathode (cathode surface) that borders the emission region (e.g., a surface of the cathode poles) can be coated with an adhesion-promoting layer.

[0075] Illustratively, the anode can be arranged at the emission gap such that a portion of the anode is not covered by the cathode. For example, the anode can be arranged relative to the cathode such that the anode and the cathode are spaced apart by at least 1 mm. In other words, the anode can be arranged relative to the cathode such that the anode is separated from the cathode by a further gap, wherein the further gap has an extension between the anode and the cathode in a range from approximately 1 mm to approximately 10 mm.

[0076] A cathode can be configured such that the emission region (or the emission gap) can have a closed shape (e.g., annular, oval, or square, with rounded corners). According to various embodiments, an ion beam source can be configured such that a racetrack can form along an emission region (or the emission gap of the cathode). For example, a closed electron stream can circulate uninterruptedly along the racetrack. Illustratively, the emission region (or the emission gap) can run along a closed path and divide the cathode into an inner section and an outer section surrounding the inner section.

[0077] A plate-shaped cathode can have two essentially parallel base surfaces and at least one side surface adjacent to the two base surfaces. Optionally, the side surfaces can taper towards each other toward the emission region (illustratively, a tapered shape of the magnetic poles).

[0078] The distance between the base surfaces can define a thickness in the thickness direction (perpendicular to the base surfaces) of the plate-shaped cathode, whereby an extension of the plate-shaped cathode perpendicular to the thickness direction (illustratively, a width) can be greater than the thickness, e.g., greater than three times the thickness. Illustratively, a body referred to herein as plate-shaped can have a smaller thickness (height) than width (perpendicular to the thickness or height).

[0079] According to various embodiments, the cathode and the anode can be configured such that the emission region has two emission region sections that are arranged (arranged) longitudinally adjacent to one another. The two emission region sections can be spaced apart from one another and can be longitudinally extended in a direction perpendicular to the spacing. The two emission region sections can each extend into and / or be arranged within a section of the emission gap (emission gap sections).

[0080] The two emission region sections can be connected to each other by at least one further curved emission region section, e.g., by a curved emission region section on opposite sides. Thus, an emission region can be provided that runs along a self-contained path (also referred to as a racetrack).

[0081] The cathode, the anode and / or the emission region (or the emission gap), e.g. each of the two emission region sections (or emission gap sections), may have a longitudinal extension (extension) of more than approximately 0.1 m, e.g. of more than approximately 0.3 m, e.g. of more than approximately 1 m, e.g. of more than approximately 2 m, e.g. of more than approximately 3 m, e.g. in a range from approximately 2 m to approximately 5 m.

[0082] According to various embodiments, the (e.g. plate-shaped) cathode may have a cathode surface, wherein the emission gap may extend through the cathode between two opposite boundary surfaces of the cathode.

[0083] The emission gap can have two gap walls extending between the two boundary surfaces. The two gap walls clearly form one wall of the emission gap. The gap walls can extend at an angle to each other. For example, the emission gap can be configured as an elongated through-opening in the cathode, wherein the elongated through-opening or the emission gap can have an opening angle.

[0084] Illustratively, the gap width of the cathode (width of the emission gap, corresponding to the distance between the cathode poles) can increase along the thickness direction of the cathode (away from the anode). The average gap width can be in the range of a few millimeters; for example, the average gap width can be less than approximately 20 mm, e.g., less than approximately 10 mm, e.g., less than approximately 5 mm, e.g., approximately 2 mm. During the course of operation of the ion beam source, the cathode can become worn (e.g., due to erosion), which can lead to an increase in the gap width. For example, the initial gap width can be approximately 2 mm and increase due to erosion with increasing operating time.

[0085] According to various embodiments, a distance between the ion beam source and the processing region (eg the substrate and / or a transport surface along which the substrate is transported, eg measured perpendicular to the substrate and / or the transport surface) may be in a range from approximately 100 mm to approximately 400 mm, eg in a range from approximately 100 mm to approximately 200 mm.

[0086] According to various embodiments, the adhesion-promoting surface element (e.g., the adhesion-promoting layer) can have greater resistance to ablation (e.g., sputtering) during operation of the ion beam source than the surface, e.g., per power (kilowatt - kW) and / or per time (e.g., per hour). In other words, the adhesion-promoting surface element (e.g., the adhesion-promoting layer) can have a lower ablation rate (ablated thickness per power and / or per time) than the surface. For example, the adhesion-promoting surface element (e.g., the adhesion-promoting layer) can have a ablation rate (ablated thickness per kilowatt-hour - kWh) of less than approximately 10 µm / kWh, e.g., less than approximately 5 µm / kWh, e.g., less than approximately 2 µm / kWh, e.g., less than approximately 1 µm / kWh, e.g., less than approximately 0.5 µm / kWh. The removal rate can be related to the length of the emission area (ie a removed thickness per length-related kilowatt-hour), e.g.based on a length of the emission region in a range of approximately 1 m to approximately 2 m (e.g., approximately 1.42 m). For example, the adhesion-promoting surface element (e.g., the adhesion-promoting layer) may have a removal rate of less than approximately 7 µm / kWh·m, e.g., less than approximately 3.5 µm / kWh·m, e.g., less than approximately 1.4 µm / kWh·m, e.g., less than approximately 0.7 µm / kWh·m, e.g., less than approximately 0.35 µm / kWh·m. The removal rate may represent the increase in gap width, which occurs, for example, on each side of the gap. For example, the gap width may increase at twice the removal rate.

[0087] The removal rate can be related to a process gas and / or its chemical composition, which can contain or be formed from oxygen and / or argon, for example.

[0088] According to various embodiments, the surface can have or form a depression in which the adhesion-promoting surface element (e.g. the adhesion-promoting layer) is arranged. For example, the adhesion-promoting surface element (e.g. the adhesion-promoting layer) can be at least partially arranged and / or countersunk in a depression (e.g. in the form of a groove) of the anode. For example, the adhesion-promoting surface element (e.g. the adhesion-promoting layer) can be flush with the surrounding surface or lie deeper than this. The thickness of the adhesion-promoting surface element (e.g. the adhesion-promoting layer) can therefore have less influence on the geometry of the ion beam source. The roughness (can also be referred to as roughness) of the adhesion-promoting surface element (e.g. the adhesion-promoting layer) can increase with increasing thickness (e.g. for certain coating processes).Therefore, according to various embodiments, an adhesion-promoting surface element (e.g., the adhesion-promoting layer) can have the greatest thickness or layer thickness (e.g., in the form of a thickening) below the emission gap (which, e.g., decreases toward the edge).

[0089] Embodiments of the invention are illustrated in the figures and are explained in more detail below.

[0090] It shows Fig. 1A and Fig. 1B shows an ion beam source according to various embodiments in a schematic cross-sectional view or side view; Fig. 2A and Fig. 2B shows an ion beam source according to various embodiments in a schematic cross-sectional view or side view; Fig. 3 shows an ion beam source according to various embodiments in a schematic plan view; Fig. 4A and Fig. 4B shows an ion beam source according to various embodiments in a schematic cross-sectional view or side view; Fig. 5A and Fig. 5B shows a processing arrangement according to various embodiments in a schematic cross-sectional view or side view; Fig. 6A shows an ion beam source according to various embodiments in a schematic perspective view; Fig. 6B shows a processing arrangement according to various embodiments in a schematic cross-sectional view or side view; Fig. 7A and Fig. 7B shows an anode according to various embodiments in a schematic detailed view; Fig. 8A and Fig. 8B shows an anode according to various embodiments in a schematic detailed view; Fig. 9 shows a processing arrangement according to various embodiments in a schematic perspective view; Fig. 10 shows an ion beam source according to various embodiments in a schematic perspective view; Fig. 11A and Fig. 11B shows a processing arrangement according to various embodiments in a schematic cross-sectional view or side view; Fig. 12A, Fig. 12B and Fig. 12C each show an ion beam source in a method according to various embodiments in a schematic cross-sectional view or side view; Fig. 13 a method according to various embodiments in a schematic flowchart; Fig. 14 shows an ion beam source in a method according to various embodiments in a schematic plan view; Fig. 15A and Fig. 15B shows an anode according to various embodiments in a schematic detailed view; Fig. 16A and Fig. 16B shows an anode according to various embodiments in a schematic detailed view; Fig. 17A shows an anode according to various embodiments in a schematic detailed view; and Fig. 17B shows a cathode according to various embodiments in a schematic detailed view.

[0091] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top," "bottom," "front," "back," "fore," "rear," etc., will be used with reference to the orientation of the described figure(s). Since components of embodiments can be positioned in a number of different orientations, the directional terminology is for purposes of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention.It is understood that the features of the various exemplary embodiments described herein may be combined with one another unless specifically stated otherwise. The following detailed description is therefore not to be construed in a limiting sense, and the scope of the present invention is defined by the appended claims.

[0092] Throughout this description, the terms "connected," "attached," and "coupled" are used to describe both a direct and an indirect connection, a direct or indirect connection, and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals where appropriate.

[0093] According to various embodiments, a roughness can be understood as an arithmetic mean roughness value (also as mean roughness value or R a -value).

[0094] According to various embodiments, a ferromagnetic material or body can be understood as meaning that the material or body has a magnetic permeability of greater than approximately 10, e.g. greater than approximately 20, e.g. greater than approximately 50, e.g. greater than approximately 100, e.g. greater than approximately 150, e.g. greater than approximately 200, e.g. greater than approximately 300. According to various embodiments, a non-magnetic material or body can be understood as meaning that the material or body has a magnetic permeability substantially of approximately 1, e.g. in a range from approximately to approximately from approximately 0.5 to 1.5, e.g. in a range from approximately to approximately from approximately 0.75 to 1.25, in a range from approximately to approximately from approximately 0.9 to 1.1. The magnetic permeability µ (also referred to as magnetic conductivity) defines the permeability of matter to magnetic fields.Magnetic permeability (also simply permeability) describes the ratio of the magnetic flux density to the magnetic field strength inside the material.

[0095] According to various embodiments, an electrically conductive material or body can be understood to mean that the material or body has an electrical conductivity of more than approximately 10 4 S / m, e.g. more than approximately 10 5 S / m, e.g. of more than about 10 6 S / m, e.g. of more than approximately 2·10 6 S / m, e.g. of more than approximately 5·10 6 S / m, e.g. of more than about 10 7 S / m, e.g. of more than approximately 2·10 7 S / m, e.g. of more than approximately 5·10 7S / m. According to various embodiments, a residually electrically conductive material or body can be understood as having an electrical conductivity greater than electrically insulating and less than electrically conductive.

[0096] The impedance of the ion beam source (or its plasma discharge, also referred to as plasma impedance) can depend on the length of the discharge area (racetrack length). The impedance of the plasma discharge (plasma impedance) relative to a racetrack length segment (e.g., in a range from approximately 0.2 cm to approximately 2 cm, e.g., approximately 1 cm) can range from approximately 0.5 MOhm (megaohms) to approximately 2 MOhm, e.g., approximately 1 MOhm. For example, with a racetrack length of approximately 1.44 m, operation with argon and an applied voltage of approximately 3000 volts (V), a discharge current of approximately 0.5 amperes (A) can result. The resulting impedance of 6 kOhms can be approximately 864 kOhms (kiloohms) relative to approximately 1 cm of the racetrack. Depending on the design and process gas used, the plasma impedance may vary.

[0097] According to various embodiments, the adhesion-promoting surface element (e.g. comprising an electrically conductive material or body, e.g. the adhesion-promoting layer) can have a smaller electrical impedance than the discharge of the ion beam source, ie the impedance of the adhesion-promoting surface element (or the adhesion-promoting layer) is smaller than the plasma impedance, e.g. less than approximately 10% of the plasma impedance, e.g. less than approximately 1% of the plasma impedance, e.g. less than approximately 0.1% of the plasma impedance, e.g. less than approximately 0.01% of the plasma impedance.

[0098] According to various embodiments, an apparatus for ion beam etching of substrates is provided, for example for pretreating, machining or processing substrates. According to various embodiments, a simple and robust anode-layer ion source (or anode-layer ion beam source) can be used, which is optionally configured such that a (e.g. focused) ion beam can be generated. For example, an ion beam can be generated from a self-contained racetrack (an area in which plasma is provided), wherein the ions then emitted can be focused, for example. In a section (e.g. in a cross-section) through a linear ion beam source, two separate beam bundles (ion partial beams) with low divergence (partial beam divergence) can arise, which emerge from forward and backward regions of the racetrack.

[0099] The characteristic dimensions of the active part of an ion beam source, ie the distance between the cathode poles and / or between the cathode poles and the anode, can be in the range of a few millimeters, eg in a range from approximately 1 mm to approximately 10 mm, eg in a range from approximately 1 mm to approximately 5 mm, eg approximately 2.5 mm.

[0100] During operation of the ion beam source, a layer grows parasitically on the anode and / or cathode of the ion beam source (e.g., an anode-layer ion source), i.e., these are parasitically coated. The material of the parasitically grown layer can originate from the substrate treated (processed), e.g., etched, by the ion beam source. Alternatively or additionally, the material of the parasitically grown layer can originate from the poles of the cathodes (cathode poles), which can be removed (e.g., sputtered off) during operation.

[0101] The area of ​​the anode that is parasitically coated can be similar in size to the emission gap. Illustratively, the area can be a few millimeters below the emission gap. Due to the intense plasma in the emission space (also referred to as the discharge space or emission region), the parasitic coating can be subjected to mechanical stress. Likewise, negative ions (e.g., when oxygen is admitted) in the space between the anode and cathode can be accelerated towards the anode, thereby becoming incorporated into the parasitic coating and thus increasing the layer stress. If the adhesion of the parasitic coating to the anode is exceeded, this can lead to (at least partial) detachment of the parasitic coating. The detached parts of the parasitic coating can subsequently lead to short circuits and premature termination of the campaign (shutdown of the ion beam source).

[0102] To improve adhesion, the anodes and / or cathode can optionally be blasted (also referred to as sandblasting or particle blasting) using a blasting medium (e.g., glass beads, sand, and / or corundum), thereby roughening them. The resulting roughness (roughness) can define the initial roughness.

[0103] When roughening, e.g., using corundum as the blasting material, the workpiece being machined, e.g., the anode, may tend to deform. To reduce this tendency to deform (i.e., so that the workpiece does not warp or warps less), glass beads, for example, can be used as the blasting material. This can result in a lower roughness than if, for example, corundum particles are used. Alternatively, the workpiece can be made of or comprised of a harder material to reduce the tendency to deform, e.g., steel.

[0104] The harder the material being blasted with the grit, the lower the roughness achieved can be. When blasting a hard material, such as steel (e.g., stainless steel), with the grit (e.g., by blasting with corundum), a lower roughness can be achieved than when blasting a softer material, such as aluminum and / or copper. Therefore, while using a softer material can provide greater roughness, it also increases the tendency for deformation during blasting (i.e., the material may warp during sandblasting).

[0105] According to various embodiments, the anode and / or the cathode can be made of a hard material and the required roughness can be or be provided by means of the adhesion-promoting surface element (e.g. the adhesion-promoting layer). In other words, according to various embodiments, the mechanical properties of the anode and / or the cathode can be or be decoupled from their adhesion-promoting properties. The anode and / or the cathode can comprise or be formed from steel. For example, the anode can comprise or be formed from non-magnetic stainless steel. For example, the cathode can comprise or be formed from ferromagnetic steel (e.g. structural steel). According to various embodiments, the anode can comprise or be formed from a hollow profile, e.g. a stainless steel hollow profile.

[0106] According to various embodiments, an adhesion-promoting surface element (e.g., an adhesion-promoting layer) is provided that roughens the surface of the anode and / or the cathode. The coating with the adhesion-promoting surface element (e.g., the adhesion-promoting layer) can be carried out by means of a thermal spraying process (e.g., by means of plasma spraying). The (e.g., sprayed-on) adhesion-promoting surface element (e.g., the (e.g., sprayed-on) adhesion-promoting layer) can be electrically conductive, e.g., to enable the function of the anode.

[0107] According to various embodiments, the adhesion-promoting surface element (e.g. the adhesion-promoting layer) may comprise aluminum or substoichiometric titanium oxide (TiO x with x less than 2) or be formed from it.

[0108] According to various embodiments, an ion source (e.g., anode layer) is provided in which the anode has a roughened surface at least below the emission gap and / or the cathode has a roughened surface at the emission gap. For example, a roughness of the anode can be greater on a side toward the emission gap (e.g., at least below the emission gap) than on a side opposite the emission gap. For example, a roughness of the cathode can be greater on a side toward the emission gap (e.g., at the emission gap) and / or opposite the anode (outside) than on a side opposite the emission gap and / or on a side toward the anode (inside).

[0109] According to various embodiments, the anode at least below the emission gap and / or the cathode at the emission gap can be provided with a rough and / or electrically conductive adhesion-promoting surface element (e.g. a rough and / or electrically conductive adhesion-promoting layer).

[0110] According to various embodiments, the adhesion-promoting surface element (e.g., the adhesion-promoting layer) can be applied by means of plasma spraying. According to various embodiments, the adhesion-promoting surface element (e.g., the adhesion-promoting layer) can comprise or be formed from a metal and / or electrically conductive oxide. The adhesion-promoting surface element (e.g., the adhesion-promoting layer) can, for example, be titanium, aluminum (Al) and / or chromium (Cr), an alloy of aluminum, chromium and / or titanium (Ti) and / or substoichiometric metal oxide (e.g., TiO 2-x ) or be formed (consist) of them.

[0111] According to various embodiments, the adhesion-promoting surface element (eg the adhesion-promoting layer) can have a mean roughness in a range of approximately 3 µm to approximately 100 µm, eg in a range of approximately 3 µm to approximately 50 µm.

[0112] According to various embodiments, the adhesion-promoting surface element (e.g., the adhesion-promoting layer) can be or become thinner with increasing distance from the (active) emission region. In other words, a thickness of the adhesion-promoting surface element (e.g., the adhesion-promoting layer) can decrease with increasing distance from the emission gap. For example, the adhesion-promoting surface element (e.g., the adhesion-promoting layer) can be arranged only on a central region of the anode. For example, the adhesion-promoting surface element (e.g., the adhesion-promoting layer) can be or become formed without masking or covering, e.g., by being or becoming sprayed.

[0113] According to various embodiments, the adhesion-promoting surface element (eg the adhesion-promoting layer) can be or will be formed along the entire emission gap (eg along its entire circumference).

[0114] Fig. 1A and Fig. 1B each illustrate an ion beam source 100a, 100b according to various embodiments in a schematic cross-sectional view (e.g., cut along the main propagation direction 207, 209) or side view.

[0115] According to various embodiments, the ion beam source 100a, 100b may include a cathode 202 and an anode 204.

[0116] According to various embodiments, the cathode 202 can be substantially plate-shaped (e.g., the cathode 202 can comprise or be formed from a sheet metal). For example, the cathode 202 can have two mutually parallel surfaces 202o (base surfaces), the distance 202d between which defines the thickness 202d of the cathode 202. For example, the cathode 202 can have a thickness in a range from approximately 1 mm to approximately 1 cm, e.g., approximately 2 mm. For example, the cathode 202 can be formed using a laser process.

[0117] The anode 204 can have two anode sections arranged side by side, each anode section having a first anode surface 204a and a second anode surface 204b. The two anode sections (or the first anode surface 204a and the second anode surface 204b) can be connected to one another by at least one further curved anode section (or its anode surface), e.g., by a curved anode section (or its anode surface) on opposite sides. Thus, the anode 204 (or its entire anode surface) can extend along a self-contained path (e.g., in the form of a ring).

[0118] Illustratively, the anode surfaces 204a, 204b can form a boundary surface of the anode 204 (or the anode sections) or be part of a boundary surface of the anode 204. Furthermore, the anode surfaces 204a, 204b can be flat (in other words, level). Illustratively, the anode surfaces 204a, 204b can be flat, for example, by grinding or milling.

[0119] Furthermore, the cathode 202 may have one or more gaps 202s (emission gap 202s or emission opening 202s). The anode 204 and the emission gap 202s may be arranged relative to each other such that the emission gap 202s may expose the anode surfaces 204a, 204b of the anode 204. The emission gap 202s may be configured as through-openings and extend through the cathode 202 along the thickness direction 205.

[0120] In the emission gap 202s, the ion beam source 100a, 100b can have a first emission region section 211 and a second emission region section 213. The emission region sections 211, 213 can descriptively designate the sections in which an ion-forming gas (e.g., a process gas) can be ionized to provide ions. The ions can be provided, for example, by means of a plasma generated in the two emission region sections 211, 213 (e.g., from the ion-forming gas). To form an ion beam from the provided ions, the provided ions can be emitted in a direction 207, 209 (main propagation direction 207, 209) away from the anode 204 (or in a direction away from the emission region sections 211, 213).

[0121] For this purpose, an electric field can be provided between the anode 204 and the cathode 202 in the two emission region sections 211, 213. The electric field can be provided in the emission gap 202s. To provide the electric field, the cathode 202 and the anode 204 can be coupled to a voltage source for generating a voltage (operating voltage) between the cathode 202 and the anode 204. In this case, a first electric potential can be provided at the cathode 202 and a second electric potential can be provided at the anode 204 by means of the voltage source, wherein an electric field can be formed between the first electric potential and the second electric potential.

[0122] The provided ions can interact with each other, e.g., repel each other, and / or interact with the electric field. A force can act on the provided ions, accelerating them such that they are emitted in directions 207, 209 away from the anode 204 and / or away from the two emission region sections 211, 213. In order to form a (e.g., focused) ion beam from the ions emitted by the two emission region sections 211, 213, ions can be emitted with a first main propagation direction 207 from the first emission region section 211 (first emission direction 207) and with a second main propagation direction 209 from the second emission region section 213 (second emission direction 209), which extend at an angle to each other.The course of the electric field lines (and thus, for example, the shape of the anode or the angle of the anode surfaces 204a, 204b to each other) of the electric field can have an influence on the two emission directions 207, 209.

[0123] The electric field can be defined and / or influenced by the shape of the cathode 202 and / or the shape of the anode 204. For example, electric field lines emerging at the anode surfaces 204a, 204b can extend into the two emission region sections 211, 213. The first emission direction 207 can be defined or become defined at least by the first anode surface 204a associated with the first emission region section 211 (e.g., adjacent to the first emission region section 211). For example, the first emission direction 207 can run perpendicular to the first anode surface 204a, e.g., parallel to the direction 205.

[0124] Analogously, the second emission direction 209 can be or become defined at least by the second anode surface 204b (associated with the second emission region section 213). The second emission direction 209 can, analogously to the first emission direction 207, run perpendicular to the second anode surface 204b, for example. In this case, the first emission direction 207 can be at an angle 513 (convergence angle) to the second emission direction 209 (cf. Fig. 5A) or parallel (compare Fig. 6B) to this.

[0125] The geometry (e.g., the size) of the emission gap 202s can be configured such that the ions emitted from the anode surfaces 204a, 204b do not collide (or collide only slightly) with the cathode 202. For example, the two emission directions 207, 209 can extend from the two anode surfaces 204a, 204b through the emission gap 202s. Illustratively, the emission gap 202s can be wide enough for ions to be emitted through the emission gap 202s.

[0126] According to various embodiments, the ion beam source 100a may include an adhesion-promoting surface element 110h (e.g., comprising or formed from an adhesion-promoting layer 110h) arranged on the first anode surface 204a and / or the second anode surface 204b. The adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) may be arranged at least on a portion of the surface of the anode 204 facing the respective emission region portion 211, 213 (the first anode surface 204a and / or the second anode surface 204b).

[0127] Optionally, the first anode surface 204a and / or the second anode surface 204b (and / or the curved anode surfaces) may be or become roughened, e.g., before the adhesion-promoting surface element 110h is applied thereto (e.g., the adhesion-promoting layer 110h is formed). The adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h), the first anode surface 204a, and / or the second anode surface 204b may have a roughness that is greater than a roughness of at least one of the following: e.g., a surface 202o of the cathode 202 facing the anode 204 (e.g., at a distance from the emission gap 202s), and a surface of the anode 204 facing away from the first anode surface 204a and / or the second anode surface 204b (e.g., an underside of the anode 204).

[0128] According to various embodiments, the ion beam source 100a may comprise an adhesion-promoting surface element 110h (e.g., comprising or formed from an adhesion-promoting layer 110h) arranged on the cathode 202 (e.g., the cathode poles). As shown in Fig. As illustrated in Figure 1B, an adhesion-promoting surface element 110h (e.g., an adhesion-promoting layer 110h) may be arranged on a surface 202o of the cathode 202 facing away from the anode 204. The adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) may optionally extend into the emission gap 202s.

[0129] Optionally, an adhesion-promoting surface element 110h (e.g. comprising or formed from an adhesion-promoting layer 110h) can be arranged on a surface 202o of the cathode 202 facing the anode 204 (compare, for example, Fig. 17B).

[0130] An extension of the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) on the anode 204 along direction 201 may be greater than an extension 304d of the emission gap 202s along direction 201 (width 304d of the emission gap 202s).

[0131] Fig. 2A and Fig. 2B each illustrate an ion beam source 200a, 200b according to various embodiments in a schematic cross-sectional view or side view.

[0132] According to various embodiments, the two anode surfaces 204a, 204b may be inclined to each other, e.g., symmetrically (e.g., with the same angle, e.g., in magnitude), e.g., with respect to the cathode surface 202o. For example, the angle of the first anode surface 204a to the direction 201 may correspond to the angle of the second anode surface 204b to the direction 201.

[0133] The cathode 202 can have side surfaces 212s, 222s, which can laterally delimit the emission gap 202s and / or can define the geometry of the emission gap 202s. The side surfaces 212s, 222s of the cathode 202 can extend at an angle to the direction 205, at an angle to the cathode surface 202o, and / or at an angle to one another. For example, the emission gap 202s delimited by the side surfaces 212s, 222s can have a trapezoidal cross-section. Illustratively, the side surfaces 212s, 222s can be beveled (i.e., have a chamfer), e.g., symmetrically or asymmetrically with respect to the cathode surface 202o.

[0134] As in Fig. 2A and Fig. 2B, the emission gap 202s may separate the cathode 202 into an inner portion 212 and an outer portion 222 surrounding the inner portion 212.

[0135] According to various embodiments, the first angle 212w and the second angle 222w may be in a range from approximately 10° to approximately 80°, e.g., in a range from approximately 25° to approximately 65°. Furthermore, the first angle 212w and the second angle 222w may differ from each other by an angular difference (asymmetric). The angular difference may be in a range from approximately 1° to approximately 40°. According to various embodiments, the angular difference may approximately correspond to the inclination angle of the anode surfaces 204a, 204b. For example, the first angle 212w may be in a range from approximately 40° to approximately 50°, and the second angle 222w may be in a range from approximately 50° to approximately 60°.

[0136] The adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) can be arranged on at least one of the following surfaces: a side wall 222s, 212s of the emission gap 202s, a cathode surface 222o (which faces away from the anode and / or adjoins the emission gap 202s), an anode surface facing the emission gap 202s, a cathode surface 212o arranged between two sections of the emission gap 202s, and / or another cathode surface 252o (which faces the anode and / or adjoins the emission gap 202s).

[0137] The anode 204 and the cathode 202 may have a distance 210d from each other in a range of about 1 mm to about 10 mm.

[0138] Fig. 3 illustrates an ion beam source 300 according to various embodiments in a schematic plan view.

[0139] The emission gap 202s formed in the cathode 202 can have emission gap sections arranged side by side and extending longitudinally (e.g., in a direction 203), similar to a racetrack. Illustratively, the emission gap sections can have a spacing 302d perpendicular to their longitudinal extension (along direction 203). The spacing 302d can be smaller than the longitudinal extension. For example, two emission gap sections 202s can extend and / or be aligned parallel to each other.

[0140] The racetrack can extend along a self-contained path (depictively, a track). For example, the path can be circular.

[0141] The gap width 304d of the emission gap 202s (e.g., the average gap width 304d) can be defined by the distance between the side surfaces 222s, 212s (also referred to as side walls of the emission gap 202s) of the cathode 202 (which delimit the emission gap 202s). For example, the emission gap 202s can have a constant gap width 304d.

[0142] According to various embodiments, the emission gap 202s may define (or provide) the respective emission region sections 211, 213. Each of the two emission region sections 211, 213 may be at least partially extended and / or arranged within one of the two emission gap sections.

[0143] The outer section 222 of the cathode 202 can surround the inner section 212 of the cathode 202, wherein the emission gap 202s can be provided between the inner section 212 and the outer section 222 of the cathode 202. According to various embodiments, the emission gap 202s can extend along a closed path and, for example, be annular, oval, or rectangular (e.g., with rounded corners).

[0144] As described above, a plasma can be generated in the emission region sections 211, 213 to provide ions. The plasma can be generated, for example, in a plasma channel, wherein the plasma channel can extend along the emission gap 202s (and / or the emission region sections 211, 213). For example, the plasma channel can be self-contained and extend through the emission region sections 211, 213. A self-contained plasma channel can be referred to as a racetrack, wherein the shape and / or position of the plasma channel can be or can be predefined by the cathode 202 or its emission gap 202s.

[0145] Fig. 4A and Fig. 4B each illustrate an ion beam source 400a, 400b according to various embodiments in a schematic cross-sectional view or side view.

[0146] According to various embodiments, the anode 204 may be arranged in a cavity 402a or in a recess 402a of a housing 402. The recess 402a of the housing 402 may further be covered by the cathode 202 (e.g., a plate-shaped cathode 202), e.g., such that the emission gap 202s formed between the inner portion 212 of the cathode 202 and the outer portion 222 of the cathode 202 is arranged above the anode 204.

[0147] The housing 402 can, for example, provide electrical and / or magnetic shielding to enable operation of the ion beam source 400a, 400b within predetermined operating parameters (e.g., to generate an ion beam with a predetermined ion intensity and / or predetermined emission direction). Furthermore, according to various embodiments, the housing 402 can act as a support structure (which can provide rigidity to the ion beam source 400a, 400b), as part of the magnetic circuit, and / or as a shield for the anode 204. The housing 402 can, for example, be ferromagnetic.

[0148] Furthermore, the housing 402 may include a supply structure for electrically supplying the cathode 202 and / or the anode 204. For example, the cathode 202 and / or the anode 204 may be coupled to a voltage supply by means of the supply structure to provide a voltage between the cathode 202 and the anode 204.

[0149] Furthermore, the housing 402 can include a cooling device for adjusting a temperature at the cathode 202 and / or the anode 204. For example, a cooling device can include a tube through which a cooling fluid flows, which is thermally and / or physically coupled to the cathode 202 and / or the anode 204. For example, the anode 204 itself can have water flowing through it.

[0150] The opening angle 402w of the emission slit 202s can, for example, be in a range from approximately 0° to approximately 120°, e.g., from approximately 40° to approximately 120°, e.g., in a range from approximately 80° to approximately 100°, e.g., approximately 90°. Furthermore, the opening angle 402w of the emission slit 202s can be tilted according to the first emission direction 207, 209. In this case, an angle bisector of the opening angle 402w can coincide with the respective emission direction 207, 209.

[0151] For example, the cathode 202 can comprise or be formed from a laser-cut sheet or multiple laser-cut sheets. Vertical (or mutually parallel) flanks of the laser cut can then form the side walls 222s, 212s (i.e., delimit the emission gap 202s). The cathode 202 can, for example, have a thickness that can be processed using a laser method (i.e., laser cutting), e.g., in a range from approximately 1 mm to approximately 5 mm, e.g., approximately 2 mm. In other words, the emission gap 202s can be formed by means of a laser cut.

[0152] According to various embodiments, the ion beam source 400a, 400b may include a magnet arrangement 404 for generating a magnetic field 403a, 403b. Plasma formation in the emission gap 202s may be supported by the magnetic field 403a, 403b.

[0153] The magnet arrangement 404 can, for example, comprise one magnet or several magnets (e.g., permanent magnets), wherein the magnets can have a magnetization 401m (e.g., in one direction 205).

[0154] The cathode 202 and / or the housing 402 may comprise a material with a relative (magnetic) permeability (permeability number) greater than 10, e.g., greater than approximately 50, e.g., greater than approximately 100. For example, the cathode 202 and / or the housing 402 may comprise a ferromagnetic material (e.g., iron, cobalt, magnetite, ferrite, nickel, or a steel alloy such as silicon steel, tungsten steel, cast steel, etc.), or may be ferromagnetic, such that the cathode 202 and / or the housing 402 is / are magnetizable by means of the magnet assembly 404. The magnet assembly 404 may be disposed between the interior portion 212 of the cathode 202 and the housing 402.

[0155] Thus, as in Fig. 4A, a magnetic flux 403a, 403b may be provided in the emission gap 202s, with the emission region sections 211, 213 being penetrated by the magnetic flux (or magnetic field) 403a, 403b. In other words, a portion of the magnetic flux may form a magnetic circuit along a closed path around the anode 204.

[0156] The regions of the cathode 202 that delimit the emission gap 202s can be referred to as cathode poles, wherein the cathode poles can optionally be arranged offset in height from one another.

[0157] The side surfaces 212s, 222s of the cathode 202 that delimit the emission gap 202s can define a profile of the magnetic field 403a, 403b within the emission gap 202s. For example, a gradient of the magnetic field 403a, 403b in the emission gap 202s can be increased the larger the angle at which the side surfaces 212s, 222s of the cathode 202 that delimit the emission gap 202s extend to each other. In other words, the magnetic stray field can be larger with beveled side surfaces 212s, 222s than with parallel side surfaces 212s, 222s.

[0158] To ensure that the anode 204 does not influence the magnetic flux pattern (or the magnetic field pattern 403a, 403b) or influences it only to a negligible extent, the anode may comprise a material with a low permeability (essentially 1), e.g., a non-magnetic material or a diamagnetic material (with a permeability of less than 1). The anode 204 may comprise, for example, copper, graphite, non-magnetic steel, or a ceramic (e.g., an electrically conductive or residually electrically conductive one).

[0159] The anode 204 may be arranged and / or held electrically insulated from the housing 402 and / or the cathode 202. For example, the anode 204 may be attached to the housing 402 by means of an electrically insulating holder 402s (e.g., a ceramic base). The electrically insulating holder 402s may comprise a material with a low permeability number (approximately 1), which, for example, has a low electrical conductivity (e.g., less than 10 -6 S / m).

[0160] Furthermore, an ion-forming (or plasma-forming) gas, e.g. a process gas, can be supplied to the emission area sections 211, 213 by means of a gas supply 406. The process gas can be supplied by means of the gas supply 406, as in Fig. 4A, the process gas can be supplied to the recess 402a in the housing 402, so that the process gas flows into the recess 402a and out of the recess 402a through the emission gap 202s. The process gas can flow through the emission region sections 211, 213. Alternatively, the process gas can be supplied to the emission region sections 211, 213 from outside the housing (e.g., from a direction 201).

[0161] As in Fig. 4B, the anode 204 may optionally be or become completely covered with the adhesion-promoting surface element 110h (e.g., coated with the adhesion-promoting layer 110h).

[0162] Fig. 5A and Fig. 5B each illustrate a processing arrangement 500a, 500b according to various embodiments in a schematic cross-sectional view or side view.

[0163] The processing arrangement 500a may have a process chamber 502, e.g. configured as a vacuum chamber 502.

[0164] The process chamber 502 can, for example, be configured such that during the processing (or machining) of a substrate 504 in the process chamber 502, the ambient conditions (the process conditions) within the process chamber 502 (e.g., pressure, temperature, gas composition, etc.) can be adjusted or regulated. For this purpose, the process chamber 502 can be configured to be airtight, dusttight, or vacuum-tight, so that a gas atmosphere with a predefined composition or a predefined pressure (e.g., according to a setpoint) can be provided within the process chamber 502. For example, one gas or several different gases can be provided in the process chamber 502.

[0165] The process chamber 502 may have one access area 502z (e.g., one opening) or multiple access areas 502z (e.g., multiple openings) through which the substrate 504 can be brought into the interior of the process chamber 502 or removed from the interior of the process chamber 502. Furthermore, the access area 502z may be sealed from the exterior of the process chamber 502, e.g., by means of a valve or a valve flap. The process chamber 502 may, for example, be coupled to other process chambers 502 by means of the access area 502z.

[0166] Furthermore, the process chamber 502 can be equipped with a pump arrangement 804 (see Fig. 11A and Fig. 11B) for pumping out (evacuating) the process chamber 502 and be configured to be stable against an external pressure (e.g., air pressure). Several interconnected process chambers 502 can form a common vacuum system, wherein the interconnected process chambers 502 can have a lock chamber arrangement for introducing and / or removing the substrate 504.

[0167] The processing arrangement 500a may further comprise a transport device 506 arranged in the process chamber 502 for transporting the substrate 504 into the process chamber 502, out of the process chamber 502 or in the process chamber 502 (eg for positioning the substrate 504 in the process chamber 502).

[0168] According to various embodiments, the processing arrangement 500a may comprise an ion beam source 200 suitable for generating a (e.g., focused) ion beam 508, e.g., for irradiating 805 a surface 504o of the substrate 504 with the ion beam 508 in the process chamber 502. For example, the processing arrangement 500a may comprise an ion beam source 200 (e.g., one of the previously described ion beam sources 100a, 100b, 200a, 200b, 300, 400a, 400b or a similar ion beam source) according to the previous description.

[0169] An ion beam 508 can be provided by the ion beam source 200, wherein the ion beam 508 comprises a first partial ion beam 508a and a second partial ion beam 508b, and wherein the two partial ion beams 508a, 508b are emitted at an angle 513 (convergence angle 513) to each other. The first partial ion beam 508a can be emitted in the first emission direction 207, and the second partial ion beam 508b can be emitted in the second emission direction 209. According to various embodiments, the ion beam source 200 can be configured such that the emitted ions of both partial ion beams 508a, 508b act on a common region 504b of the surface 504o of the substrate 504 (processing region 504b).

[0170] The ions of the (e.g., focused) ion beam 508 can have a mean emission direction 511, which can define an angle 511w (angle of incidence 511w) at which the (e.g., focused) ion beam 508 is directed onto the surface (504o) of the substrate (504). The mean emission direction 511 can be defined by the superposition of the two emission directions 207, 209 of the partial ion beams 508a, 508b. For example, the mean emission direction 511 can run approximately along the angle bisector of the convergence angle 513.

[0171] Illustratively, the distance of the processing region 803 to the first emission region section 211 can approximately correspond to the distance of the processing region 504b to the second emission region section 213, so that the two partial ion beams 508a, 508b can be approximately the same length.

[0172] According to various embodiments, the substrate 504 can be transported by means of the transport device 506 (e.g., optionally by means of a substrate holder) along a transport plane 504e, e.g., through the processing region 803. The (e.g., focused) ion beam 805 can, for example, act on a surface 504o of a substrate 504 from below. Clearly, the arrangement can be oriented (arranged and aligned) as desired relative to a substrate 504 and / or a substrate transport plane 504e in which a substrate 504 can be transported (and, for example, adapted to the shape of a process chamber 502 or the course of the substrate transport plane 504e in the process chamber 502). In other words, the ion beam source 200 can be arranged and aligned relative to a substrate 504 such that a surface 504o of the substrate 504 to be processed can be irradiated by means of the ion beam source 200.

[0173] According to various embodiments, the processing arrangement 500b can comprise one or more carriers 408 (collecting carrier) configured to absorb atomized material 411. The carrier(s) 408 can form a collecting device. Illustratively, the at least one carrier 408 can function as a dirt trap.

[0174] The at least one carrier 408 can be configured, for example, above, to the side, or below the beam path (of the split ion beams 508a, 508b) as a collecting device (absorption device) for the sputtered material 411. According to various embodiments, the carrier 408 can comprise a metal sheet. Furthermore, a louvre curtain can be used as the dirt trap 408. Clearly, the dirt trap can comprise a plurality of metal sheets (aligned approximately parallel to one another) arranged offset from one another (in direction 501, e.g., in the substrate transport direction 501).

[0175] According to various embodiments, the plurality of carriers 408, as in Fig. 5B, can be arranged offset from one another such that material that is not absorbed by one of the carriers 408 can be reflected toward an adjacent carrier 408. For example, the boundary surfaces of the carriers 408 can be configured such that material reflected by the carriers 408 is reflected in a direction away from the ion beam source 200. Parasitic coating of the ion beam source 200 can be reduced by means of the collecting device 408.

[0176] According to various embodiments, the ion beam source 200 can be arranged relative to the surface of the substrate 504 such that an ion beam 508 emitted (e.g., focused) by the ion beam source 200 is directed at an angle 511w onto a surface 504o of a substrate 504. The irradiation of the surface 504o of the substrate 504 by the ion beam 508 can be carried out such that a first part 508a of the ion beam 508 is emitted in a first direction and a second part 508b of the (e.g., focused) ion beam is emitted in a second direction (different from the first direction). In this case, the ion beam source 200 can be arranged relative to the surface 504o of the substrate 504 in such a way that a partial surface of the substrate 504 irradiated by means of the first part 508a of the ion beam 508 and a partial surface of the substrate 504 irradiated by means of the second part 508b of the (egfocused) ion beam 508 irradiated partial surface of the substrate 504.

[0177] Fig. 6A illustrates an ion beam source 600 according to various embodiments in a schematic perspective view and Fig. 6B shows a processing arrangement 600b with the ion beam source 600 according to various embodiments in a schematic cross-sectional view or side view.

[0178] In this case, an (e.g., unfocused) anode-layer ion beam source can be arranged (aligned) relative to a substrate 504 to be irradiated such that the generated ion beam 508a, 508b impinges on the substrate 504 at an angle. Thus arranged, regions of the substrate 504 irradiated by the partial ion beams 508a, 508b (processing regions 504b) can be spaced apart from one another. Clearly, a short partial ion beam 508a and a long partial ion beam 508b can be generated between the ion beam source 600 and the substrate 504 by means of a processing arrangement 600b with an inclined ion beam source 600 and beam bundles 508a, 508b emerging parallel to a direction 207, 209. Clearly, a processing area 504b irradiated by the shorter ion partial beam 508a (e.g.a removal region) of the substrate 504 closer to the ion beam source 600 than a processing region 504b of the substrate 504 irradiated by the longer ion partial beam 508b.

[0179] Fig. 7A and Fig. 7B each illustrate an anode 204 according to various embodiments in a schematic detailed view (e.g., cut transversely to the direction 203).

[0180] The anode 204 may comprise or be formed from a hollow body. In other words, the anode 204 may have a cavity 802. The cavity 802 may be configured to receive a coolant (e.g., a cooling liquid and / or a cooling gas). The cavity 802 may, for example, be coupled to a coolant connection. The coolant connection may be coupled to a coolant supply, which conducts a coolant through the cavity 802 during operation of the ion beam source 200.

[0181] As in Fig. 7A illustrates, a surface 204a, 204b of the anode 204 facing the respective emission region section 211, 213 (or the emission region 211, 213) (e.g. adjacent to the emission region 211, 213) can be or become at least partially (ie partially or completely) covered with the adhesion-promoting surface element 110h (e.g. with the adhesion-promoting layer 110h), e.g. to more than approximately 50%, e.g. to more than approximately 75%, e.g. to more than approximately 90%.

[0182] As in Fig. 7B, a surface 204a, 204b of the anode 204 facing the emission region 211, 213 (e.g., adjacent to the emission region 211, 213) may be or become partially covered with the adhesion-promoting surface element 110h (e.g., with the adhesion-promoting layer 110), e.g., less than approximately 50%, e.g., less than approximately 25%, e.g., less than approximately 10%

[0183] Alternatively or additionally, an extension of the adhesion-promoting surface element 110h (e.g. the adhesion-promoting layer 110h), as in Fig. 7B, be greater than the width 711 of the emission region 211, 213, e.g., greater than twice the width 711 of the emission region 211, 213, e.g., greater than three times the width 711 of the emission region 211, 213. The width 711 of the emission region 211, 213 can be defined by the distance between the side surfaces 212s, 222s of the cathode 202 (e.g., be identical thereto).

[0184] As in Fig. As illustrated in Figure 7B, the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer) 110h may have a gradient in the thickness 110d (e.g., layer thickness 110d), e.g., along a direction parallel to the surface 204a, 204b of the anode 204 (e.g., transverse to the thickness 110d or layer thickness 110d, respectively). For example, the thickness 110d may decrease in a direction having a directional component away from the emission region 211, 213, e.g., on opposite sides of the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h).

[0185] The region 804g of the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h), in which the thickness 110d decreases (gradient region 804g), can have an extension 110g transverse to the thickness 110d that is greater than the thickness 110d.

[0186] Fig. 8A and Fig. 8B each illustrate an anode 204 according to various embodiments in a schematic detailed view (e.g., cut transversely to the direction 203).

[0187] As in Fig. 8A, the gradient region 804g may have an extent 110g transverse to the thickness 110 (e.g., layer thickness 110d) that is smaller than the thickness 110d, e.g., substantially disappearing. Clearly, the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) may have a substantially homogeneous thickness 110d over the entire coated area of ​​the anode 204 (i.e., be substantially formed from a homogeneous region 806), e.g., with a maximum variation of less than approximately 20%, e.g., less than approximately 10%, e.g., less than approximately 5%, e.g., less than approximately 1%).

[0188] As in Fig. 8B, the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) may have a gradient region 804g which at least partially (ie, partially or completely) covers the surface 204a, 204b of the anode 204 facing the emission region 211, 213 (e.g., adjacent to the emission region 211, 213), e.g., to more than approximately 25%, e.g., to more than approximately 50%, e.g., to more than approximately 75%, e.g., in a range from approximately 25% to approximately 75%.

[0189] Alternatively or additionally, the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) may have a homogeneous region 806 having a substantially homogeneous thickness 110d. The homogeneous region 806 may at least partially (i.e., partially or completely) cover the surface 204a, 204b of the anode 204 facing the emission region 211, 213 (e.g., adjacent to the emission region 211, 213), e.g., more than approximately 25%, e.g., more than approximately 50%, e.g., more than approximately 75%, e.g., in a range from approximately 25% to approximately 75%.

[0190] The Fig. 7A, Fig. 7B, Fig. 8A, Fig. 8B illustrate possible cross-sections of the thickness or cross-section of the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110). These can, of course, optionally be approximated by a variety of similar profiles, for example, by rounded shapes, such as a Gaussian profile.

[0191] Fig. 9 illustrates a processing arrangement 900 according to various embodiments in a schematic perspective view.

[0192] The ion beam source 200 may be attached to a chamber lid 904. The chamber lid 904 may have a sealing surface 904d that seals an associated chamber opening in a processing chamber 502 (process chamber 502), e.g., when the chamber lid 904 rests on the chamber opening.

[0193] The processing arrangement 900 can have a supply arrangement 910 (also referred to as a supply structure), which is fastened, for example, to the chamber lid 904. The supply arrangement 910 can have a power supply and / or a coolant supply. Alternatively or additionally, the supply arrangement 910 can have one or more supply connections 910a, e.g., one or more power connections, one or more high-voltage connections, high-vacuum pump connections 914, one or more high-voltage connections (designed for more than 1000 volts), one or more forevacuum pump connections 912, and / or one or more coolant connections 916. Optionally, the supply arrangement 910 can have a high-vacuum pump connected to each high-vacuum pump connection 914, which is coupled, for example, to the one or more forevacuum pump connections 912.

[0194] Fig. 10 illustrates an ion beam source 1000 according to various embodiments in a schematic perspective view.

[0195] The ion beam source 1000 may include a mounting assembly 1002 that defines a position and / or orientation of the cathode 202 and / or the anode 204. The mounting assembly 1002 may include an adjustable joint 1004, by means of which the position and / or orientation of the cathode 202 and / or the anode 204 can be adjusted.

[0196] By means of the fastening arrangement 1002, the ion beam source 1000 can be or become fastened to a processing chamber 502, e.g. to its chamber lid 904.

[0197] Fig. 11A and Fig. 11B each illustrate a processing arrangement 1100a, 1100b according to various embodiments in a schematic cross-sectional view or side view.

[0198] According to various embodiments, the processing arrangement 1100a, 1100b may comprise at least one processing chamber 502 (one or more processing chambers 502), which may be provided by the chamber housing. The at least one processing chamber 502 may be configured to generate and / or maintain a vacuum therein. For example, the processing arrangement 1100a, 1100b may comprise several of the Fig. 11A and Fig. 11B, of which, for example, two adjacent processing chambers 502 are adjacent to each other. The adjacent processing chambers 502 can be connected to each other by means of a substrate transfer opening, so that they form, for example, a common vacuum system. Alternatively or additionally, another chamber, for example, a gas separation chamber, can be arranged between two processing chambers 502.

[0199] An ion beam source 200 can be arranged in each processing chamber 502 of the processing arrangement 1100a, 1100b, which can optionally be arranged in pairs. A collecting device 408 can optionally be arranged in at least one of the processing chambers 502 (i.e., in one or more than one processing chamber 502) according to various embodiments.

[0200] According to various embodiments, the processing arrangement 1100a, 1100b may comprise a pump arrangement 804 (comprising at least one high-vacuum pump). The pump arrangement 804 may be configured to extract a gas (e.g., the process gas) from the at least one processing chamber 502 (e.g., the vacuum chamber 502), such that a vacuum (e.g., a pressure of less than 0.3 bar) and / or a pressure in a range of approximately 10 -3 Millibar (mbar) to approximately 10 -7mbar (in other words high vacuum) or a pressure less than high vacuum, e.g. less than about 10 -7 mbar (in other words ultra-high vacuum) can be or will be provided.

[0201] According to various embodiments, the pressure (base pressure) in the processing chamber 502, e.g. for performing an ion beam process (e.g. outside the operation of the ion beam source 200) may be less than approximately 10 -3 mbar, e.g. less than about 10 -4 mbar. Alternatively or additionally, the pressure (process pressure, ie while the process gas is admitted, e.g. by means of the ion beam source 200) can be in a range of approximately 10 -4 mbar to approximately 5·10 -3 mbar, e.g. in a range of approximately 3·10 -4 mbar 2·10 -3 mbar. The process pressure and / or the base pressure may depend on the available pumping speed of the pumps used.

[0202] According to various embodiments, the processing arrangement 1100a, 1100b may include a controller 518, which may be coupled to several components of the processing arrangement 1100a, 1100b (shown in dashed lines).

[0203] Furthermore, the at least one processing chamber 502 can be configured such that the vacuum conditions (the process conditions) within the at least one processing chamber 502 (e.g., process pressure, process temperature, chemical process gas composition, etc.) can be set or regulated, e.g., during the ion beam treatment (i.e., during operation of the ion beam source 200), e.g., by means of the controller 518.

[0204] According to various embodiments, the processing arrangement 1100a, 1100b can have a gas supply 716. A process gas can be supplied to the at least one processing chamber 502 by means of the gas supply 716 to form a process atmosphere in the at least one processing chamber 502. The process gas can, for example, comprise or be formed from a working gas and / or a reactive gas. The process pressure can be formed from an equilibrium of process gas, which is supplied by means of the gas supply 716 and removed by means of the pump arrangement 804.

[0205] According to various embodiments, the reactive gas may comprise at least one of the following: oxygen, nitrogen, hydrogen sulfide, methane, gaseous hydrocarbons, fluorine, chlorine, or another gaseous material. Alternatively or additionally, the working gas may comprise or be formed from an inert gas, such as a noble gas, e.g., argon. The reactive gas may have a higher chemical reactivity than the working gas.

[0206] According to various embodiments, the controller 518 can be configured to control and / or regulate the vacuum conditions. For example, the gas supply 716 and / or the pump arrangement 804 can be controlled and / or regulated by the controller 518, e.g., based on a specification. The specification can, for example, represent the vacuum conditions, e.g., a chemical composition of the gas inside the processing chamber 502, and / or an operating parameter of the ion beam source 200 (e.g., consumed electrical current, applied electrical voltage, ion intensity, and / or consumed electrical power).

[0207] According to various embodiments, the controller 518 can be configured to control and / or regulate the ion beam source 200, e.g., based on the specification. The specification can, for example, represent an operating parameter of the ion beam source 200. For example, the actual processing characteristic in the processing region 803 can be controlled and / or regulated by means of the controller 518, e.g., by setting or regulating operating parameters of the ion beam source 200, e.g., based on a target operating parameter characteristic (e.g., a target ion intensity). Alternatively or additionally, processing of a substrate 504 can be carried out in a controlled and / or regulated manner. Then, the specification can represent a processing characteristic (e.g., a target etching rate). The processing characteristic can comprise at least one of the following: an etching rate (i.e., a quantity of material removed per unit time, e.g.,spatially averaged and / or their spatial distribution), an etching progress (ie a removed amount of material per area, e.g. spatially averaged and / or their spatial distribution) and / or a superposition thereof.

[0208] According to various embodiments, the processing arrangement 1100a may include a substrate transport device 506. According to various embodiments, the substrate transport device 506 of the processing arrangement 1100a may include an unwinding roller 502a for unwinding a strip-shaped substrate 504 into the processing area 803. Furthermore, the substrate transport device 506 of the processing arrangement 1100a may include a take-up roller 502b for winding the strip-shaped substrate 504, which is brought out of the processing area 803.

[0209] A strip-shaped substrate 504 (strip substrate) can, for example, be a metal strip or a metal foil, or a plastic strip (polymer strip) or a plastic foil (polymer foil). According to various embodiments, the strip substrate can comprise any material, e.g., a metal, a semimetal, a polymer, a glass, or any other material that can be processed with a correspondingly low material thickness and / or as fibers using rolls 114r or rollers 114r. Clearly, a strip substrate can be any substrate 504 that can be wound onto a roll 502a, 502b and / or processed, for example, from roll to roll. Depending on the material, a strip substrate can have a thickness in a range from approximately a few micrometers (e.g., approximately 1 µm) to approximately a few millimeters (e.g., up to approximately 10 mm).

[0210] According to various embodiments, the substrate transport device 506 of the processing arrangement 1100a can have a plurality of transport rollers 114r, which define a (e.g., singly or multiply curved) transport path 504e (or a corresponding transport surface 504e), along which the strip-shaped substrate 504 is transported between the unwinding roller 502a and the winding roller 502b through the processing area 803.

[0211] Alternatively, the substrate transport device 506 of the processing arrangement 1100b can have a plurality of transport rollers 114r configured to transport a plate-shaped substrate 504. The plate-shaped substrate 504 can be transported, for example, resting on the transport rollers 114r and / or inserted into a substrate carrier 1110.

[0212] Furthermore, the processing arrangement 1100a, 1100b can include a transport drive 1602, which is coupled to at least some of the plurality of transport rollers 114r and optionally to the unwind roller 502a and the take-up roller 502b. For example, the transport drive 1602 can be coupled to the rollers 114r, 502a, 502b by means of chains, belts, or gears. The transport rollers 114r and the transport drive 1602 can be part of the substrate transport device 506.

[0213] According to various embodiments, the controller 518 can be configured to control and / or regulate the transport drive 1602. For example, a transport state (e.g., a transport speed, a transport position, a substrate flow, etc.) can be controlled and / or regulated by means of the controller 518, e.g., based on a specification representing a processing characteristic and / or based on a position of the at least one substrate 504 or the substrate carrier 1110.

[0214] Fig. 12A and Fig. 12B each illustrate an ion beam source in a method according to various embodiments in a schematic cross-sectional view or side view.

[0215] As illustrated in view 1200a, a workpiece, e.g., the anode 204 and / or the cathode 202 (e.g., its cathode pole) of the ion beam source, may be provided with a surface 1202 to be coated. The surface 1202 to be coated may have a first roughness. The first roughness may be defined by the manufacturing process (e.g., casting, milling, and / or grinding) of the workpiece 202, 204.

[0216] Optionally, the surface 1202 to be coated can be roughened, e.g., by etching, grinding, and / or by irradiation 1212 with a blasting material 1212p (particle irradiation), as illustrated by way of example in view 1200a. The first roughness can then be defined by the roughening. The surface 1202 to be coated can then, for example, have a greater roughness than another surface of the workpiece 202, 204, e.g., a surface of the workpiece 202, 204 opposite the surface 1202 to be coated.

[0217] As illustrated in view 1200b, an adhesion-promoting surface element 110h (e.g., an adhesion-promoting layer 110h) can be arranged on the workpiece 202, 204, e.g., the anode 204 and / or the cathode 202 (e.g., its cathode pole) of the ion beam source. Solid particles 1210p can be used to form the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h). The solid particles 1210p can be heated, e.g., at least partially activated and / or at least partially melted, by means of a plasma 1210 or by means of another thermal process. In other words, the solid particles 1210p can be heated by means of the plasma 1210 to a temperature equal to or higher than their melting temperature. For example, the solid particles 1210p can be supplied 506 to the plasma 1210.

[0218] For example, the plasma 1210 can be provided by a plasma source, e.g., a plasma torch. The plasma torch can provide an arc that ionizes a gas (gas stream) or gas mixture flowing through the plasma torch. The gas can comprise or be formed from argon, nitrogen, hydrogen, and / or helium. Alternatively or additionally, the gas can comprise or be formed from air.

[0219] Due to the ionization, plasma 1210 can be generated, i.e., a highly heated (up to 20,000 Kelvin) and / or electrically conductive gas comprising separated ions and electrons. Solid particles 1210p (e.g., a powder) can be introduced into this plasma 1210. The solid particles 1210p can be melted by the plasma 1210 (i.e., by its plasma temperature). The gas flow (plasma flow) can be directed toward the workpiece 202, 204. The gas flow transports the solid particles 1210p to the surface 1202 of the workpiece 202, 204 to be coated. The solid particles 1210p can attach to the surface 1202 of the workpiece 202, 204 to be coated and form the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h).

[0220] The at least partially activated and / or melted solid particles 1210p can solidify on the surface 1202 of the workpiece 202, 204 to be coated and / or at least partially chemically bond thereto (e.g. a metal-metal bond), for example at least partially fuse thereto and / or chemically react thereto.

[0221] Optionally, a portion of the surface 1202 of the workpiece 202, 204 to be coated can be shielded by a mask 1208. Coating can then be performed through the mask 1208.

[0222] The solid particles 1210p may have an average size (ie, grain size, e.g., diameter) in a range from approximately 5 µm to approximately 120 µm or in a range from approximately 100 nm to approximately 5 µm, e.g., in a range from approximately 5 µm to approximately 50 µm. The adhesion-promoting surface element 110h, e.g., the adhesion-promoting layer 110h, (e.g., its surface 110o) may have a second roughness that is greater than the first roughness.

[0223] For example, the second roughness can be defined by the average dimension of the solid particles 1210p. The second roughness can, for example, be smaller than the average dimension of the solid particles 1210p (grain size). For example, the second roughness can be in a range from approximately 10% of the grain size to approximately 90% of the grain size, e.g., in a range from approximately 10% of the grain size to approximately 50% of the grain size.

[0224] The solid particles 1210p may comprise at least one of the following: aluminum, chromium, titanium, an alloy comprising aluminum and / or titanium, a ratio of oxygen to metal (e.g., titanium) of less than 1. Alternatively or additionally, the solid particles 1210p or the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) may comprise or be formed from aluminum oxide, spinels, and / or a ceramic mixed system (e.g., comprising aluminum oxide).

[0225] Alternatively or additionally, the coating may comprise or be achieved by a thermal spraying process, e.g. arc spraying, powder flame spraying, wire flame spraying, high-velocity flame spraying, plasma spraying and / or cold gas spraying.

[0226] Optionally, after coating, roughening of the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) can be carried out (i.e., a roughness of the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) is increased), e.g., by means of particle irradiation.

[0227] The adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) can have an electrically conductive surface 110o, which is arranged on a side of the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) facing away from the workpiece 202, 204. The electrically conductive surface 110o can, for example, comprise or be formed from a metal and / or an electrically conductive oxide.

[0228] Alternatively or additionally, the surface 110o of the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) may have an electrical conductivity of more than approximately 10 S / m, e.g., more than approximately 10 2 S / m, e.g. of more than about 10 3 S / m, e.g. of more than about 10 4 S / m, e.g. of more than about 10 5 S / m, e.g. of more than about 10 6 S / m.

[0229] Optionally, the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) may have a (e.g., electrically conductive) passivation layer 110o. For example, the passivation layer 110o may be or become formed when the material of the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) is natively oxidized and / or comprises an electrically insulating oxide. The passivation layer 110o may have an electrical conductivity that is greater than an oxide of the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h), e.g., an electrical conductivity of more than approximately 10 S / m, e.g., more than approximately 10 2 S / m, e.g. of more than about 10 3 S / m, e.g. of more than about 10 4 S / m, e.g. of more than about 10 5 S / m, e.g. of more than about 106 S / m. If the adhesion-promoting surface element 110h (e.g. the adhesion-promoting layer 110h) itself comprises or is formed from an oxide which is sufficiently electrically conductive, e.g. in the case of substoichiometric titanium oxide (TiO x with x less than 2), i.e., if the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) has an oxygen-to-titanium ratio of less than 1, the passivation layer 110o can be omitted. The passivation layer 110o can be more chemically resistant than the surface to which it is applied. For example, the passivation layer 110o can comprise an oxide (e.g., stoichiometric), e.g., for passivating a metallic surface.

[0230] Alternatively or in addition to the passivation layer 110o, a current transport layer 110o (also referred to as a conductive layer or conductive layer) may be used. According to various embodiments, the current transport layer 110o may be electrically conductive or, for example, electrically residually conductive.

[0231] By means of coating, other materials can also be deposited as the adhesion-promoting layer 110h, e.g. a carbide (e.g. tungsten carbide, chromium carbide and / or titanium carbide), a metal (e.g. aluminum, iron, copper, molybdenum, nickel, niobium, tantalum, titanium, tungsten, zinc and / or tin), an alloy comprising the metal, an oxide ceramic (e.g. aluminum oxide, chromium oxide, zirconium oxide, titanium oxide, mullite, yttrium oxide, and / or spinel) and / or a layered composite material (e.g. a nickel alloy / tungsten carbide layered composite material, a nickel-graphite layered composite material and / or a nickel-bentonite layered composite material). For example, the individual layers of the adhesion-promoting surface element 110h (e.g. the adhesion-promoting layer 110h) can differ in their material, their chemical composition and / or their hardness.

[0232] Fig. 12C illustrates an ion beam source in a method according to various embodiments in a schematic cross-sectional view or side view.

[0233] As in view 1200c, the coating can be carried out using a nozzle 1252. The nozzle 1252 can emit the solid particles 1210p (e.g., a powder), e.g., in the direction of the workpiece 202, 204. The nozzle 1252 can cause a collimation of the solid particles 1210p (or their direction of movement). The solid particles 1210p can optionally be transported and / or collimated by means of a gas jet. In other words, the solid particles 1210p can form a particle jet 1262 (collimated, aligned directions of movement), which defines the shape of the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) through its spatial distribution of the solid particles 1210p. For example, the thickness of the adhesion-promoting surface element 110h (e.g. the adhesion-promoting layer 110h) may decrease towards the edge.

[0234] Fig. 13 illustrates a method 1300 according to various embodiments in a schematic flowchart.

[0235] The method 1300 may include, in 1302, providing a surface of the cathode and / or the anode, wherein the surface has a first roughness. Furthermore, in 1304, the method may include applying an adhesion-promoting surface element to the surface, which has a second roughness; wherein the second roughness is greater than the first roughness and / or greater than 3 µm.

[0236] For example, the method in 1304 may include: coating the surface with an adhesion-promoting layer having a second roughness; wherein the second roughness is greater than the first roughness and / or than 3 µm.

[0237] Fig. 14 illustrates an ion beam source 1400 in a method according to various embodiments in a schematic plan view.

[0238] According to various embodiments, the cathode poles (the portions of the cathode 202 adjacent to the emission gap 202s) can be or become covered with an adhesion-promoting surface element 110h (e.g., coated with the adhesion-promoting layer 110h) on both sides of the emission gap 202s.

[0239] The adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) may have a width (along direction 201) that is smaller than a distance between the two emission gap sections 202s. For example, the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) may be configured in the form of a (self-contained) strip that follows the contour of the emission gap 202s. For example, the Fig. The view illustrated in FIG. 14 shows the side of the cathode 202 facing the anode (illustratively the underside). Alternatively, the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) can be arranged and formed on the anode (hidden in the view) and / or the side of the cathode 202 facing away from the anode.

[0240] The outer section 222 may include an outer cathode plate, and the inner section 212 may include or be formed from an inner cathode plate. The outer cathode plate and the inner cathode plate may be attached to the housing (may also be referred to as a cathode body), e.g., by screwing.

[0241] Fig. 15A and Fig. 15B each illustrate an anode 204 according to various embodiments in a schematic detailed view (e.g., cut transversely to the direction 203).

[0242] According to various embodiments, the anode 204 may have a recess 1502 (e.g., a groove 1502). For example, the recess may extend along a closed path. The adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) may be arranged in the recess 1502.

[0243] The recess 1502 can reduce and / or prevent protrusion of the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h). Thus, a greater second roughness can be achieved, e.g., if the second roughness increases with increasing thickness 110d of the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h).

[0244] For example, the recess 1502 may be configured such that the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) is not raised. In other words, a depth of the recess 1502, ie, its extension into the anode 204, may approximately correspond to the thickness 110d of the adhesion-promoting surface element 110h (e.g., the layer thickness of the adhesion-promoting layer 110h), as shown in Fig. 15A. Optionally, the recess 1502 can provide and / or compensate for the region 804g of the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) in which the thickness 110d decreases. For this purpose, the recess 1502 can have sloped side surfaces. For example, a surface of the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) can be or become planarized.

[0245] According to various embodiments, the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) may have a planar surface, as shown in Fig. 15A is illustrated.

[0246] Alternatively, the adhesion promoting surface element 110h (e.g., the adhesion promoting layer 110h) may protrude from the recess 1502, as shown in Fig. 15B is illustrated.

[0247] Fig. 16A and Fig. 16B each illustrate an anode 204 according to various embodiments in a schematic detailed view (e.g., cut transversely to the direction 203), analogous to that described above.

[0248] According to various embodiments, the recess 1502 may have parallel side surfaces.

[0249] Fig. 17A illustrates an anode 204 according to various embodiments in a schematic detailed view (e.g., cut transversely to the direction 203), analogous to that described above.

[0250] According to various embodiments, the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) may have at least one protruding portion 1702 above a side surface of the recess 1502. For example, the at least one protruding portion 1702 may be formed by injection-molding the recess 1502 (e.g., a groove 1502).

[0251] Fig. 17B illustrates a cathode 202 according to various embodiments in a schematic detailed view (e.g., cut transversely to the direction 203), analogous to that described above.

[0252] According to various embodiments, the cathode 202 may include a mounting structure 1704 (e.g., including one or more through holes, threads, holes, screws, etc.) by means of which the cathode 202 may be attached to the housing.

[0253] According to various embodiments, the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) may have at least a first portion 1706, which is arranged on the side surface 212s, 222s of the cathode. The first portion 1706 may have a thickness (measured perpendicular to the side surface 212s, 222s) in a range from approximately 0.1 mm to approximately 0.3 mm or less. The first portion 1706 may, for example, comprise or be formed from a metal oxide (e.g., titanium oxide), e.g., in a substoichiometric composition (e.g., TiO 2-x). Alternatively or additionally, the first section 1706 may be electrically conductive or at least residually electrically conductive. The first section 1706 may have the second roughness.

[0254] According to various embodiments, the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) may have at least a second portion 1712, which is arranged on the further cathode surface 252o. The second portion 1712 may have a thickness (measured perpendicular to the further cathode surface 252o) in a range from approximately 0.1 mm to approximately 0.3 mm, e.g., approximately 0.2 mm or less. The second portion 1712 may, for example, comprise or be formed from a metal oxide (e.g., titanium oxide), e.g., in a substoichiometric composition (e.g., TiO 2-x) and / or the same chemical composition as the first section 1206. Alternatively or additionally, the second section 1712 may be electrically conductive or at least residually electrically conductive. The second section 1712 may have the second roughness.

[0255] According to various embodiments, the adhesion-promoting surface element 110h (e.g., the adhesion-promoting layer 110h) may comprise at least a third portion 1710, which is arranged on an edge of the cathode 202, e.g., an edge at which the further cathode surface 252o and the side surface 212s, 222s abut. The third portion 1710 may have a thickness 1708 (e.g., measured parallel to the further cathode surface 252o) in a range from approximately 0.1 mm to approximately 0.3 mm or more, e.g., less than 0.5 mm. The third portion 1712 may connect the first portion 1706 to the second portion 1712 (i.e., physically contact both). The third portion 1712 may, for example, comprise or be formed from a metal oxide (e.g., titanium oxide), e.g., in a substoichiometric composition (e.g., TiO 2-x) and / or the same chemical composition as the first section 1206. Alternatively or additionally, the third section 1710 may be electrically conductive or at least residually electrically conductive. The third section 1710 may have the second roughness. The third section 1710 may have an edge (e.g., conformal to the cathode 202).

[0256] According to various embodiments, the outer portion 222 may include or be formed from the illustrated portion 1714 of the cathode 205. Alternatively or additionally, the inner portion 212 may include or be formed from the illustrated portion 1714 of the cathode 205.

[0257] According to various embodiments, a thickness of the adhesion promoting surface element 110h (eg, the adhesion promoting layer 110h) may be smaller than a thickness of the cathode 202 (eg, extension along direction 205).

Claims

[1] Ion beam source (100a, 100b, 200), comprising: • a cathode (202) and an anode (204) for generating ions in an elongated emission region (211, 213); and • an adhesion-promoting surface element (110h) which is arranged on a surface (204a, 204b, 202o) of the anode (204) and / or the cathode (202); • wherein the adhesion-promoting surface element (110h) adjoins the emission region (211, 213) and has a greater roughness than the surface (204a, 204b, 202o) and / or than 3 µm. [2] Ion beam source (100a, 100b, 200) according to claim 1, wherein the cathode (202) has an emission gap (202s) into which the emission region (211, 213) extends. [3] The ion beam source (100a, 100b, 200) according to claim 1 or 2, wherein the cathode (202) has a greater magnetic permeability than the anode (204) and the adhesion-promoting surface element (110h); and / or wherein the magnetic permeability of the adhesion-promoting surface element (110h) is substantially equal to or less than the permeability of the anode (204). [4] Ion beam source according to one of claims 1 to 3, wherein the adhesion-promoting surface element (110h) comprises a metal and / or oxygen. [5] Ion beam source (100a, 100b, 200) according to one of claims 1 to 4, wherein the adhesion-promoting surface element (110h) comprises at least one of the following: aluminum, titanium, chromium; an alloy comprising aluminum, chromium and / or titanium; and / or an oxygen to metal ratio of less than 1. [6] The ion beam source (100a, 100b, 200) according to any one of claims 1 to 5, wherein a thickness (110d) of the adhesion-promoting surface element (110h) decreases in a direction away from the emission region (211, 213). [7] Ion beam source (100a, 100b, 200) according to one of claims 1 to 6, wherein the adhesion-promoting surface element (110h) is electrically conductive and / or has an electrically conductive surface (204a, 204b, 202o). [8] Ion beam source (100a, 100b, 200) according to one of claims 1 to 7, wherein the adhesion-promoting surface element (110h) comprises at least one of the following: an adhesion-promoting layer, a plate, a sheet and / or a foil. [9] Processing arrangement (500a, 500b), comprising: • a process chamber (502) for processing a substrate (504) in a processing area (803) of the process chamber (502); and • an ion beam source (100a, 100b, 200) according to one of claims 1 to 8 for generating an ion beam (508) in the direction of the processing region (803). [10] A method (1300) for treating an ion beam source (100a, 100b, 200) having a cathode (202) and an anode (204), the method (1300) comprising: • Providing (1302) a surface (204a, 204b, 202o, 1202) of the cathode (202) and / or the anode (204), wherein the surface (204a, 204b, 202o, 1202) has a first roughness; and • Applying (1304) an adhesion-promoting surface element (110h) to the surface (204a, 204b, 202o, 1202) which has a second roughness; wherein the second roughness is greater than the first roughness and / or than 3 µm. [11] Method (1300) according to claim 10, wherein the adhesion-promoting surface element comprises a sheet and / or a foil which is attached to the surface. [12] The method (1300) according to claim 10 or 11, wherein the adhesion promoting surface element has the second roughness prior to application. [13] Method (1300) according to one of claims 10 to 12, wherein applying the adhesion-promoting surface element (110h) comprises coating the surface (204a, 204b, 202o, 1202) with an adhesion-promoting layer (110h) having the second roughness. [14] Method (1300) according to claim 13, wherein the coating (1304) is carried out using solid particles (1210p) which are exposed to a plasma (1210) for coating; and / or wherein the coating (1304) comprises a thermal spray coating. [15] Method (1300) according to claim 13 or 14, wherein the adhesion-promoting layer (110h) is applied using electrochemical deposition. [16] Method (1300) according to one of claims 13 to 15, further comprising: Machining the adhesion promoter layer after coating to create the second roughness.

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