Semiconductor structure and method for its production

Abstract

Semiconductor structure (100, 200, 300, 400), comprising: a first substrate (101); a second substrate (108); a third substrate (106) disposed between the first substrate (202) and the second substrate (108); a plug (107) extending through the third substrate (101); a first sensor structure (106a) above the first substrate (101) and between the first substrate (101) and the second substrate (108); a via (109) extending through the second substrate (108); a second sensor structure (110) over the second substrate (108) and having a connection structure (110a) electrically connected to the via (109) and a sensor material (110b) at least partially covering the connection structure (110a); and wherein the second substrate (108) is connected to the first substrate (101) via the via (109) and the plug (107).

Description

BACKGROUNDElectronic devices including semiconductor devices are essential for many modern applications. Semiconductor devices have experienced rapid growth. Technical advances in materials and design have produced generations of semiconductor devices where each generation has smaller and more complex circuits than the previous generation. As advances and innovations progress, the functional density (i.e., the number of interconnected elements per chip area) has generally increased, while the pattern width (i.e., the smallest component that can be produced by a fabrication process) has decreased. Such an advance has increased the complexity of processing and manufacturing semiconductor devices.Microelectromechanical systems (MEMS) have recently been developed and are frequently incorporated into electronic devices. A MEMS device is a micro-sized device, typically ranging from less than 1 micrometer to several millimeters. A MEMS device involves the fabrication of semiconductor materials to form mechanical and electrical elements. A MEMS device may include a number of elements (e.g., stationary or movable elements) to perform electromechanical functions. For many applications, MEMS devices are electrically connected to external circuitry to form complete MEMS systems. Normally, the connections are formed by wire bonding. MEMS devices are generally used in various applications. MEMS applications include motion sensors, gas detectors, pressure sensors, print nozzles, and the like. Furthermore, MEMS applications are extended to optical applications, such as movable mirrors and radio frequency (RF) applications such as RF switches or the like.As technologies develop, the design of the devices becomes more difficult in view of the small dimensions as a whole and the increase in the functionality and amount of the circuits. Various manufacturing processes are implemented within such a small and high performance semiconductor device. The manufacture of a semiconductor device on a miniaturized scale becomes more difficult. The increase in complexity of manufacturing may result in errors such as high yield loss, poor reliability of electrical connections, warpage, etc. Therefore, there is a continuing need to change structures and manufacturing methods of the devices in electronic devices to improve device performance and reduce manufacturing cost and processing time.DE 10 2012 208 031 A1 describes measures for realizing hybrid integrated components. Such a component includes an ASIC device having a processed front side, a first MEMS device having a micromechanical structure extending over the entire thickness of the first MEMS substrate, and a first cap wafer mounted over the micromechanical structure of the first MEMS device. The first MEMS component is mounted on the processed front side of the ASIC component in such a way that a gap exists between the micromechanical structure and the ASIC component.US 2015 / 0 028 433 A1 discloses a structure for encapsulating a microstructure fabricated on and / or in a substrate and positioned in at least one cavity formed between the substrate and a cap firmly bonded to the substrate, the cap comprising at least one layer of a first material, a surface of which forms an inner wall of the cavity, and mechanical reinforcement portions firmly bonded at least to the surface of the layer of the first material.Further prior art is known from US 2014 / 0 015 123 A1, US 2013 / 0 193 527 A1 and US 2015 / 0 355 219 A1.The invention is defined in the claims.BRIEF DESCRIPTION OF THE DRAWINGSAspects of the present invention will be best understood from the following detailed description when read with the accompanying drawings. It is emphasized that, in accordance with the usual practice in the industry, various elements are not drawn to scale. Indeed, the dimensions of the various elements may be increased or decreased arbitrarily for clarity of discussion. FIG. 1 is a schematic view of a semiconductor structure in accordance with some embodiments of the present disclosure. FIG. 1A is a schematic view of a semiconductor structure in accordance with some embodiments of the present disclosure. FIG. 2 is a schematic view of a semiconductor structure in accordance with another aspect of the present disclosure. FIG. 2A is a schematic view of a semiconductor structure in accordance with some embodiments of the present disclosure. FIG. 3 is a schematic view of a semiconductor structure in accordance with another aspect of the present disclosure. FIG. 4 is a schematic view of a semiconductor structure in accordance with another aspect of the present disclosure. FIG. 5 is a flow diagram of a method of manufacturing a semiconductor structure in accordance with some embodiments of the present disclosure. FIGS. 5A to 5F are schematic views for fabricating a semiconductor structure by a method of FIG. 5, in accordance with some embodiments of the present disclosure. FIG. 6 is a flow diagram of a method of manufacturing a semiconductor structure in accordance with some embodiments of the present disclosure. FIGS. 6A to 6F are schematic views for fabricating a semiconductor structure by a method of FIG. 6, in accordance with some embodiments of the present disclosure. FIG. 7 is a flow diagram of a method of manufacturing a semiconductor structure in accordance with some embodiments of the present disclosure. FIGS. 7A to 7H are schematic views for manufacturing a semiconductor structure by a method of FIG. 7 in accordance with some embodiments of the present disclosure. FIG. 8 is a flow diagram of a method of manufacturing a semiconductor structure in accordance with some embodiments of the present disclosure. FIGS. 8A to 8H are schematic views for fabricating a semiconductor structure by a method of FIG. 8, in accordance with some embodiments of the present disclosure. FIG. 9 is a flow diagram of a method of manufacturing a semiconductor structure in accordance with some embodiments of the present disclosure. FIGS. 9A to 9E are schematic views for fabricating a semiconductor structure by a method of FIG. 9, in accordance with some embodiments of the present disclosure. FIG. 10 is a flow diagram of a method of manufacturing a semiconductor structure in accordance with some embodiments of the present disclosure. FIGS. 10A to 10E are schematic views for manufacturing a semiconductor structure by a method of FIG. 10 in accordance with some embodiments of the present disclosure.DETAILED DESCRIPTION OF THE DISCLOSUREThe following disclosure provides many different embodiments or examples to implement different devices of the intended subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Forming a first device over or on a second device in the following description may include, for example, embodiments in which the first and second devices are formed in direct contact, and may also include embodiments in which additional devices may be formed between the first device and the second device, such that the first and second devices need not be in direct contact. In addition, the present disclosure may repeat reference numerals and / or letters in the various examples. This repetition is for purposes of simplicity and clarity and does not in itself impose any relationship between the various embodiments and / or configurations described.Further, spatially relative terms such as "bottom," "below," "lower," "above," "upper," and the like, may be used herein for convenience of description to describe the relationship of an element or feature with one or more other elements or features as shown in the figures. The spatially relative terms are intended to encompass different orientations of the device being used or operated in addition to the orientation shown in the figures. The device may be otherwise oriented (rotated 90 degrees or in another orientation) and the spatially relative terms used herein may also be interpreted accordingly.An electronic device may include multiple MEMS sensors, and these sensors may be integrated into a semiconductor die in the last generations of MEMS applications. For example, motion or inertial sensors are used for motion activated user interfaces in entertainment electronics such as smart phones, tablets, game consoles, and automotive accident detection systems. To detect a full space of movements within a three-dimensional space, motion sensors often use an accelerometer and a gyroscope in combination. The accelerometer senses linear movements and the gyroscope senses rotational movements. In addition, a magnetic sensor, such as an electronic compass, is also integrated on the chip for navigation. The magnetic sensor may detect a direction of an external magnetic field. In order to meet the demand of users for low cost, high quality, and small device footprint, multiple sensors are integrated together on the same substrate.MEMS sensors are manufactured and integrated on the substrate by various methods. The sensors are integrated laterally or horizontally on the substrate so as to become the electronic device. The sensors are arranged adjacent to each other. Such integration, however, would result in undesirably large element sizes or shape factors of the electronic device. Further, the sensors are integrated and electrically connected by wire bonding. Such connections would cause parasitic capacitance and result in high noise or poor overall performance of the electronic device. In addition, the sensors are connected to each other by wafer bonding operations requiring a high temperature. Some of the sensors are easily destroyed by the high temperature. The high temperature may cause damage to some sensors and thus adversely affect their sensitivity or performance.The present disclosure relates to a semiconductor structure including a plurality of devices integrated on / over a substrate. The semiconductor structure includes a substrate and one or more devices disposed over the substrate and integrated by a plurality of conductive vias. The integration of the devices through the conductive vias allows stacking of the devices over each other on the substrate to reduce the device size or form factor of the semiconductor structure. Further, electrical connection of the devices through the conductive vias may reduce the generation of noise and improve the performance of the semiconductor structure. Further, some of the devices may be fabricated after completion of high temperature processes such as wafer bonding operations. These devices are not damaged by the high temperature. As such, devices such as magnetic devices comprising anisotropic magnetoresistive material (AMR), giant magnetoresistive material (GMR), or tunnel magnetoresistive material (TMR), which are easily affected by high temperature (greater than about 300° C.), would not be affected by the high temperature and thus may also be formed in the semiconductor structure. Other embodiments are also disclosed.FIG. 1 is a schematic cross-sectional view of a semiconductor structure 100 in accordance with some embodiments of the present disclosure. In some embodiments, the semiconductor structure 100 is configured such that various characteristics such as motion, magnetic field, pressure, etc., or combinations thereof may be measured. In some embodiments, the semiconductor structure 100 is configured to be capable of detecting linear motion, rotational motion, direction of the magnetic field, etc. In some embodiments, the semiconductor structure 100 includes one or more substrates stacked over each other and one or more devices for measuring various predetermined characteristics. In some embodiments, as shown in FIG. 1, the semiconductor structure 100 includes a first substrate 101, a second substrate 108, a first sensor structure 106 aand a second sensor structure 110. Note that the semiconductor structure 100 may include one or more substrates and one or more sensor structures.In some embodiments, the semiconductor substrate 100 includes the first substrate 101. In some embodiments, the first substrate 101 may include multiple circuits and one or more active elements such as transistors, etc., disposed over or in the first substrate 101. In some embodiments, the circuits formed over or in the first substrate 101 may be any type of circuit suitable for a particular application. In accordance with some embodiments, the circuits may include various n-type metal oxide semiconductor (NMOS) and / or p-type metal oxide semiconductor (PMOS) devices such as transistors, capacitors, resistors, diodes, photodiodes, fuses, and / or the like. The circuits may be interconnected to perform one or more functions. In some embodiments, the first substrate 101 includes ASIC components disposed over or within the first substrate 101. In some embodiments, the first substrate 101 includes CMOS components disposed over or within the first substrate 101. In some embodiments, the first substrate 101 includes semiconductor materials such as silicon or other suitable materials. In some embodiments, the first substrate 101 is a silicon substrate or a silicon wafer. In some embodiments, a CMOS substrate is incorporated into the first substrate 101.In some embodiments, the first sensor structure 106 ais arranged over the first substrate 101. In some embodiments, the first sensor structure 106 ais configured to sense motion, such as a motion sensing device. In some embodiments, the first sensor structure 106 ais a gyroscope for measuring angular velocity. In some embodiments, the first sensor structure 106 ais an accelerometer for measuring linear acceleration. In some embodiments, the first sensor structure 106 aincludes a proof mass that can respond to movement along a plane and a support spring for holding the proof mass. In some embodiments, the first sensor structure 106 ais a single or multi-axis gyroscope, a single or multi-axis accelerometer, or a single or multi-axis sensor device.In some embodiments, the second substrate 108 is disposed over the first substrate 101 and the first sensor structure 106 a. In some embodiments, the second substrate 108 is vertically stacked over the first substrate 101. In some embodiments, the second substrate 108 is a cap substrate or cap wafer to cover the first substrate 101. In some embodiments, the second substrate 108 comprises silicon or other suitable materials.In some embodiments, a cavity 105 is disposed between the first substrate 101 and the second substrate 108. In some embodiments, the cavity 105 surrounds the first sensor structure 106 a. The first sensor structure 106 ais movable within the cavity 105. In some embodiments, the cavity 105 is in a vacuum or has a gas pressure of less than about 1 atmospheric pressure (atm). In some embodiments, the first sensor structure 106 ais sealed in the cavity 105.In some embodiments, a bond pad 108 bmay be a combination of two distributed materials, wherein a first bond material is used on the first substrate 101 and a second bond material is used on the second substrate 108. The first bonding material and the second bonding material may be of the metal-metal or metal-semiconductor type. The first bonding material and the second bonding material may include silicon (Si) on aluminum (Al), silicon (Si) on gold (Au), germanium (Ge) on aluminum (Al), titanium (Ti) on aluminum (Al), copper (Cu) on tin (Sn), indium (In) on gold (Au), or any type of suitable bonding layers.In some embodiments, a via 109 is disposed in the second substrate 108. In some embodiments, via 109 extends through second substrate 108. In some embodiments, via 109 is electrically connected to bond pad 108b. In some embodiments, via 109 is disposed over bond pad 108 b. In some embodiments, the second substrate 108 is connected to the first substrate 101 through the via 109. In some embodiments, via 109 is a substrate via (TSV) or a silicon via (TSV). In some embodiments, via 109 includes conductive material, metallic material, or semiconductor material. In some embodiments, via 109 includes gold, silver, copper, nickel, tungsten, aluminum, tin, and / or alloys thereof. In some embodiments, via 109 is a copper column. In some embodiments, via 109 includes silicon, polysilicon, etc. In some embodiments, via 109 is a silicon pillar.In some embodiments, a first isolation layer 109 ais disposed over the second substrate 108 and between the second substrate 108 and the via 109. In some embodiments, the first isolation layer 109 ais conformal with a surface of the second substrate 108 and a sidewall of the via 109. In some embodiments, the first isolation layer 109 asurrounds the via 109. In some embodiments, the first isolation layer 109 aincludes dielectric material such as oxide, silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, polymer, or the like.In some embodiments, a second sensor structure 110 is disposed over the second substrate 108. In some embodiments, the second sensor structure 110 is configured to measure or detect a magnetic field, determine a direction, etc. In some embodiments, the second sensor structure 110 is a magnetic field sensor, a magnetic sensor, a single or multiple axis magnetic sensor, a magnetometer, a geo-magnetic sensor, etc. In some embodiments, the second sensor structure 110 serves as an electronic or digital compass. In some embodiments, the second sensor structure 110 cooperates with the first sensor structure 106 ato determine a direction of movement.In some embodiments, the second sensor structure 110 includes a connection structure 110 athat is electrically connected to the via 109. In some embodiments, the interconnect structure 110 ais disposed over the second substrate 108 or the first isolation layer 109 aand is in communication with the via 109 to be electrically connected to the via 109. In some embodiments, the interconnect structure 110 ais electrically connected to the via 109 and the bond pad 108 b. In some embodiments, the second sensor structure 110 is connected to the first substrate 101 via the connection structure 110 aand the via 109. In some embodiments, the interconnect structure 110 ais a magnetic sensing electrode configured to send an electrical signal to the first substrate 101 or the second substrate 108. In some embodiments, the interconnect structure 110 ais a post-passivation interconnect (PPI) or part of a redistribution layer (RDL). In some embodiments, the interconnect structure 110 aincludes aluminum, copper, nickel, gold, tungsten, titanium, alloys thereof, or multi-layers thereof.In some embodiments, the second sensor structure 110 comprises a sensor material 110 bthat at least partially covers the connection structure 110 a. In some embodiments, the sensor material 110 bis configured to be able to measure a magnetic field. In some embodiments, the sensor material 110 bis a magnetic sensor material. In some embodiments, the connection structure 110 amay transmit an electrical signal corresponding to the magnetic field sensed by the sensor material 110 b. For example, when the magnetic field is applied to the sensor material or around the semiconductor structure 100, an electric resistance of the sensor material 110 bchanges, and the connection structure 110 atransmits the electric signal corresponding to the change in resistance to the first substrate 101 or the second substrate 108 for further processing, and thus the magnetic field is measured and detected. In some embodiments, the sensor material 110 bincludes anisotropic magnetoresistive (AMR) material, giant magnetoresistive (GMR) material, or tunnel magnetoresistive (TMR) material, or other suitable materials.In some embodiments, a second insulation layer 110 cis disposed over the second substrate 108 and covers or surrounds the connection structure 110 aand the sensor material 110 b. In some embodiments, the second insulation layer 110 cis configured to protect the connection structure 110 aand the sensor material 110 b. In some embodiments, the second isolation layer 110 ccomprises dielectric material such as oxide, silicon dioxide, silicon oxynitride, silicon carbide, polymer, or the like.FIG. 1A is a schematic cross-sectional view of a semiconductor structure 100', in accordance with some embodiments of the present disclosure. In some embodiments, the semiconductor structure 100 is configured such that various characteristics such as motion, magnetic field, pressure, etc., or combinations thereof can be measured. In some embodiments, the semiconductor structure 100 is configured to be capable of detecting linear motion, rotational motion, direction of the magnetic field, etc. In some embodiments, the semiconductor structure 100 includes one or more substrates stacked over each other and one or more devices for measuring various predetermined characteristics. In some embodiments, as shown in FIG. 1A, the semiconductor structure 100' includes a first substrate 101, a third substrate 106, a second substrate 108, a first sensor structure 106a, and a second sensor structure 110. It will be appreciated that the semiconductor structure 100 may include one or more substrates and one or more sensor structures.In some embodiments, the semiconductor structure 100' includes the first substrate 101. In some embodiments, the first substrate 101 may include multiple circuits and one or more active elements such as transistors, etc., disposed over or in the first substrate 101. In some embodiments, the circuits formed over or in the first substrate 101 may be any type of circuit suitable for a particular application. In accordance with some embodiments, the circuits may include various n-type metal oxide semiconductor (NMOS) and / or p-type metal oxide semiconductor (PMOS) devices such as transistors, capacitors, resistors, diodes, photodiodes, fuses, and / or the like. The circuits may be interconnected to perform one or more functions. In some embodiments, the first substrate 101 includes ASIC components disposed over or within the first substrate 101. In some embodiments, the first substrate 101 includes CMOS components disposed over or within the first substrate 101. In some embodiments, the first substrate 101 includes semiconductor materials such as silicon or other suitable materials. In some embodiments, the first substrate 101 is a silicon substrate or a silicon wafer. In some embodiments, a CMOS substrate is incorporated into the first substrate 101.In some embodiments, the first substrate 101 includes a first surface 101 aand a second surface 101 bopposing the first surface 101 a. In some embodiments, the first surface 101 ais an active side or a front side of the first substrate 101 such that multiple circuits or electrical components are arranged over the first surface 101 a. In some embodiments, the second surface 101 bis an inactive side or a back side of the first substrate 101 where the circuits or electrical components are absent.In some embodiments, an inter-metal dielectric (IMD) layer 102 is disposed over the first substrate 101. In some embodiments, the IMD layer 102 is disposed on the first surface 101 aof the first substrate 101. In some embodiments, the IMD layer 102 includes a conductive structure 103 and a dielectric material 102 aof the conductive structure 103. In some embodiments, the conductive structure 103 is disposed over or within the IMD layer 102. In some embodiments, the conductive structure 103 is electrically connected to a circuit or element in the first substrate 101. In some embodiments, the conductive structure 103 includes copper, aluminum, tungsten, etc. In some embodiments, the dielectric material 102 aincludes oxide, silicon dioxide, silicon nitride, silicon oxynitride, silicon carbide, polymer, or the like.In some embodiments, a dielectric layer 104 is disposed over the IMD layer 102. In some embodiments, the dielectric layer 104 is disposed over or covers the conductive structure 103. In some embodiments, the dielectric layer 104 includes oxide, silicon dioxide, silicon nitride, silicon oxynitride, silicon carbide, polymer, or the like. In some embodiments, a first cavity 105 is disposed in the dielectric layer 104. The first cavity 105 extends through the dielectric layer 104. In some embodiments, the first cavity 105 extends through the dielectric layer 104 to the dielectric material 102 aof the IMD 102. In some embodiments, the dielectric layer 104 includes the same or different materials than the dielectric material 102 a.The third substrate 106 is disposed over the first substrate 101. In some embodiments, the third substrate 106 is disposed on the dielectric layer 104. In some embodiments, the third substrate 106 is bonded over the first substrate 101. In some embodiments, the third substrate 106 is vertically stacked over the first substrate 101. In some embodiments, the third substrate 106 is directly bonded to the dielectric layer 104. In some embodiments, the third substrate 106 comprises silicon, glass, ceramic, or other suitable materials. In some embodiments, the third substrate 106 is a silicon substrate or a silicon wafer. In some embodiments, the third substrate 106 includes a MEMS substrate. In some embodiments, the third substrate 106 includes electrical circuits formed on or in the first substrate 106. In some embodiments, the third substrate 106 includes transistors, capacitors, resistors, diodes, photodiodes, and / or the like. In some embodiments, the third substrate 106 includes a MEMS device or component.In some embodiments, the third substrate 106 includes a first sensor structure 106 a. In some embodiments, the first sensor structure 106 ais configured to sense motion, such as a motion sensing device. In some embodiments, the first sensor structure 106 ais a gyroscope for sensing angular velocity. In some embodiments, the first sensor structure 106 ais an accelerometer for sensing linear acceleration. In some embodiments, the first sensor structure 106 aincludes a proof mass that can respond to movement along a plane and a support spring for holding the proof mass. In some embodiments, the first sensor structure 106 ais a single or multi-axis gyroscope, a single or multi-axis accelerometer, or a single or multi-axis sensor device. In some embodiments, the first sensor structure 106 ais disposed over or aligned with the first cavity 105. In some embodiments, the first sensor structure 106 ais movable within the first cavity 105 and relative to the first substrate 101, the IMD layer 102, or the dielectric layer 104.In some embodiments, a plug 107 is disposed in the third substrate 106. In some embodiments, the plug 107 extends through the third substrate 106 and is electrically connected to the conductive structure 103. In some embodiments, the plug 107 is disposed over the first substrate 101. The plug 107 extends through the third substrate 106 and the dielectric layer 104 and is connected to at least a portion of the conductive structure 103. In some embodiments, the plug 107 comprises conductive materials such as gold, silver, copper, nickel, tungsten, aluminum, tin, and / or alloys thereof.In some embodiments, a first bond pad 106 bis disposed over the third substrate 106. In some embodiments, the first bond pad 106 bis configured to receive an interconnect structure. In some embodiments, the first bond pad 106 bis disposed over the plug 107 or the conductive structure 103. In some embodiments, the first bond pad 106 b, the plug 107, and the conductive structure 103 are electrically connected. In some embodiments, the first bond pad 106 bincludes aluminum, copper, titanium, gold, nickel, or other suitable materials.In some embodiments, the second substrate 108 is disposed over the third substrate 106. In some embodiments, the second substrate 108 is vertically stacked over the third substrate 106 or the first substrate 101. In some embodiments, the second substrate 108 is disposed over the dielectric layer 104 and the IMD layer 102. In some embodiments, the second substrate 108 is a cap substrate or cap wafer to cover the first substrate 101 and the third substrate 106. In some embodiments, the second substrate 108 comprises silicon or other suitable materials.In some embodiments, the second substrate 108 includes a second cavity 108 awithin the second substrate 108. In some embodiments, the second cavity 108 aextends through a portion of the second substrate 108 and away from the first substrate 101 or the third substrate 106. In some embodiments, the second cavity 108 ais disposed over the first sensor structure 106 aand the first cavity 105. In some embodiments, the first cavity 105 and the second cavity 108 aare connected and aligned with each other to become a cavity (the first cavity 105 and the second cavity 108 a), allowing the first sensor structure 106 ato move therein. In some embodiments, the cavity (the first cavity 105 and the second cavity 108 a) is defined by the first substrate 101 and the second substrate 108 and surrounds the first sensor structure 106 a. The first sensor structure 106 ais movable within the cavity (the first cavity 105 and the second cavity 108 a) defined by the first substrate 101 and the second substrate 108. In some embodiments, the cavity (the first cavity 105 and the second cavity 108 a) is in a vacuum or has a gas pressure of less than about 1 atmospheric pressure (atm). In some embodiments, the first sensor structure 106 ais sealed in the cavity (the first cavity 105 and the second cavity 108 a).In some embodiments, a second bond pad 108 bis disposed over the second substrate 108. In some embodiments, the second bond pad 108 bis disposed between the second substrate 108 and the third substrate 106. In some embodiments, the second bond pad 108 bis disposed adjacent and aligned with the first bond pad 106 b. In some embodiments, the second bond pad 108 bis electrically connected to the first bond pad 106 b. In some embodiments, the second bond pad 108 bis disposed over and electrically connected to the plug 107 and the conductive structure 103 via the first bond pad 106 b. In some embodiments, the second bond pad 108 bincludes germanium, silicon, or other suitable materials. In some embodiments, the second bond pad 108 bis bonded to the first bond pad 106 bsuch that the second substrate 108 is bonded to the third substrate 106. In some embodiments, the second bond pad 108 bis eutectically bonded to the first bond pad 106 b. In some embodiments, the first bond pad 106 band the second bond pad 108 bmay be made of a material combination of silicon (Si) on aluminum (Al), silicon (Si) on gold (Au), germanium (Ge) on aluminum (Al), titanium (Ti) on aluminum (Al), copper (Cu) on tin (Sn), indium (In) on gold (Au), or any type of suitable bond layers.In some embodiments, a via 109 is disposed in the second substrate 108. In some embodiments, the via 109 passes through the second substrate 108 and is electrically connected to the plug 107 and the conductive structure 103. In some embodiments, via 109 is electrically connected to plug 107 via first bond pad 106 band second bond pad 108 b. In some embodiments, via 109 is disposed over second bond pad 108 b, first bond pad 106 b, plug 107, or conductive structure 103. The second bond pad 108 bis disposed over the via 109 and the second substrate 108. In some embodiments, the second bond pad 108 bis connected to the via 109. In some embodiments, the second substrate 108 is connected to the third substrate 106 or the first substrate 101 via the via 109 and the plug 107. In some embodiments, via 109 is a substrate via (TSV) or a silicon via (TSV). In some embodiments, via 109 includes conductive material, metallic material, or semiconductor material. In some embodiments, via 109 includes gold, silver, copper, nickel, tungsten, aluminum, tin, and / or alloys thereof. In some embodiments, via 109 is a copper column. In some embodiments, via 109 includes silicon, polysilicon, etc. In some embodiments, via 109 is a silicon pillar.In some embodiments, a first isolation layer 109 ais disposed over the second substrate 108 and between the second substrate 108 and the via 109. In some embodiments, the first isolation layer 109 ais conformal with a surface of the second substrate 108 and a sidewall of the via 109. In some embodiments, the first isolation layer 109 asurrounds the via 109. In some embodiments, the first isolation layer 109 aincludes dielectric material such as oxide, silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, polymer, or the like.In some embodiments, a second sensor structure 110 is disposed over the second substrate 108. In some embodiments, the second sensor structure 110 is configured to measure or sense a magnetic field, determine a direction, etc. In some embodiments, the second sensor structure 110 is a magnetic field sensor, a magnetic sensor, a single or multiple axis magnetic sensor, a magnetometer, a geo-magnetic sensor, etc. In some embodiments, the second sensor structure 110 serves as an electronic or digital compass. In some embodiments, the second sensor structure 110 cooperates with the first sensor structure 106 ato determine a direction of movement.In some embodiments, the second sensor structure 110 includes a connection structure 110 athat is electrically connected to the via 109. In some embodiments, the interconnect structure 110 ais disposed over the second substrate 108 or the first isolation layer 109 aand is in communication with the via 109 to be electrically connected to the via 109. In some embodiments, the interconnect structure 110 ais electrically connected to the via 109, the second bond pad 108 b, the first bond pad 106 b, the plug 107, or the conductive structure 103. In some embodiments, the second sensor structure 110 is connected to the first substrate 101 or the third substrate 106 through the connection structure 110 aand the via 109. In some embodiments, the interconnect structure 110 ais a magnetic sensing electrode configured to send an electrical signal to the first substrate 101, the third substrate 106, or the second substrate 108. In some embodiments, the interconnect structure 110 ais a post-passivation interconnect (PPI) or part of a redistribution layer (RDL). In some embodiments, the interconnect structure 110 aincludes aluminum, copper, nickel, gold, tungsten, titanium, alloys thereof, or multi-layers thereof.In some embodiments, the second sensor structure 110 comprises a sensor material 110 bthat at least partially covers the connection structure 110 a. In some embodiments, the sensor material 110 bis configured to be capable of sensing a magnetic field. In some embodiments, the sensor material 110 bis a magnetic sensor material. In some embodiments, the connection structure 110 amay transmit an electrical signal corresponding to the magnetic field sensed by the sensor material 110 b. For example, when the magnetic field is applied to the sensor material or around the semiconductor structure 100, an electric resistance of the sensor material 110 bchanges, and the connection structure 110 atransmits the electric signal corresponding to the change in resistance to the first substrate 101, the third substrate 106, or the second substrate 108 for further processing, and thus the magnetic field is detected and detected. In some embodiments, the sensor material 110 bincludes anisotropic magnetoresistive (AMR) material, giant magnetoresistive (GMR) material, or tunnel magnetoresistive (TMR) material, or other suitable materials.In some embodiments, a second insulation layer 110 cis disposed over the second substrate 108 and covers or surrounds the connection structure 110 aand the sensor material 110 b. In some embodiments, the second insulation layer 110 cis configured to protect the connection structure 110 aand the sensor material 110 b. In some embodiments, the second isolation layer 110 ccomprises dielectric material such as oxide, silicon dioxide, silicon oxynitride, silicon carbide, polymer, or the like.FIG. 2 is a schematic cross-sectional view of a semiconductor structure 200 in accordance with some embodiments of the present disclosure. In some embodiments, the semiconductor structure 200 includes a first substrate 101, a second substrate 108, a first sensor structure 106 aand a cavity 105 arranged in a similar configuration as described above and shown in FIG. 1. In some embodiments of FIG. 2, the semiconductor structure 200 includes a second sensor structure 110 disposed over a second surface 101 bor a back side of the first substrate 101 and a via extending through the first substrate 101.In some embodiments, the via 109 extends from the second surface 101 band within the first substrate 101. In some embodiments, via 109 is a TSV. In some embodiments, via 109 includes conductive material, metallic material, or semiconductor material. In some embodiments, via 109 includes gold, silver, copper, nickel, tungsten, aluminum, tin, and / or alloys thereof. In some embodiments, via 109 is a copper column. In some embodiments, via 109 includes silicon, polysilicon, etc. In some embodiments, via 109 is a silicon pillar.In some embodiments, a first isolation layer 109 ais disposed over the second surface 101 bof the first substrate 101 and between the via 109 and the first substrate 101. In some embodiments, the first isolation layer 109 ais conformal with the second surface of the first substrate 101 and a sidewall of the via 109. In some embodiments, the first isolation layer 109 asurrounds the via 109. In some embodiments, the first isolation layer 109 aincludes dielectric material such as oxide, silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, polymer, or the like.In some embodiments, a second sensor structure 110 is disposed over the first substrate 101. In some embodiments, a connection structure 110 a, a sensor material 110 band a second insulation layer 110 care arranged over the first substrate 101. In some embodiments, the connection structure 110 ais disposed over the first insulation layer 109 a. In some embodiments, the interconnect structure 110 ais disposed over and electrically connected to the via 109. In some embodiments, the interconnect structure 110 ais a magnetic sensing electrode configured to transmit an electrical signal to the first substrate 101 or the second substrate 108. In some embodiments, the interconnect structure 110 ais a post-passivation interconnect (PPI) or part of a redistribution layer (RDL). In some embodiments, the interconnect structure 110 aincludes aluminum, copper, nickel, gold, tungsten, titanium, alloys thereof, or multi-layers thereof.In some embodiments, the sensor material 110 bis disposed over the first substrate 101 and at least partially covers the connection structure 110 a. In some embodiments, the sensor material 110 bis configured to be capable of sensing a magnetic field, such as a magnetic sensor material. In some embodiments, the connection structure 110 amay transmit an electrical signal corresponding to the magnetic field measured by the sensor material 110 b. In some embodiments, the sensor material 110 bincludes AMR material, GMR material, TMR material, or other suitable materials.In some embodiments, the second insulation layer 110 cis disposed over the first substrate 101 and covers or surrounds the connection structure 110 aand the sensor material 110 b. In some embodiments, the second insulation layer 110 cis configured to protect the connection structure 110 aand the sensor material 110 b. In some embodiments, the second isolation layer 110 ccomprises dielectric material such as oxide, silicon dioxide, silicon oxynitride, silicon carbide, polymer, or the like.FIG. 2A is a schematic cross-sectional view of a semiconductor structure 200' in accordance with some embodiments of the present disclosure. In some embodiments, the semiconductor structure 200' includes a first substrate 101, an intermetallic dielectric (IMD) layer 102, a dielectric layer 104, a third substrate 106, a plug 107, a second substrate 108, and a cavity (a first cavity 105 and a second cavity 108a) arranged in a similar configuration as described above and shown in FIG. 1A. In some embodiments of FIG. 2A, the semiconductor structure 200 includes a second sensor structure 110 disposed over a second surface 101 bor a back side of the first substrate 101 and a via 109 extending through the first substrate 101.In some embodiments, a conductive structure 103 disposed over or within a dielectric material 102 aof the IMD layer 102 includes an upper portion 103 aand a lower portion 103 b. In some embodiments, the upper portion 103a is disposed over and electrically connected to the lower portion 103b. In some embodiments, the upper portion 103 ais an upper metal layer and the lower portion 103 bis a lower metal layer. In some embodiments, the upper portion 103a is proximal to the third substrate 106 and distal to the first substrate 101 and the lower portion 103b is proximal to the first substrate 101. In some embodiments, the upper portion 103 aof the conductive structure 103 is disposed over or connected to the plug 107. In some embodiments, the via 109 extends from the second surface 101 bof the first substrate 101 to the first surface 101 aof the first substrate 101 and is disposed over or connected to the bottom portion 103 bof the conductive structure 103. In some embodiments, the via 109 is electrically connected to the bottom portion 103 bof the conductive structure 103. In some embodiments, the via 109 extends through the first substrate 101 to the IMD layer 102. In some embodiments, via 109 is a TSV. In some embodiments, via 109 includes conductive material, metallic material, or semiconductor material. In some embodiments, via 109 includes gold, silver, copper, nickel, tungsten, aluminum, tin, and / or alloys thereof. In some embodiments, via 109 is a copper column. In some embodiments, via 109 includes silicon, polysilicon, etc. In some embodiments, via 109 is a silicon pillar.In some embodiments, a first isolation layer 109 ais disposed over the second surface 101 bof the first substrate 101 and between the via 109 and the first substrate 101 or the IMD layer 102. In some embodiments, the first isolation layer 109 ais conformal with the second surface of the first substrate 101 and a sidewall of the via 109. In some embodiments, the first isolation layer 109 asurrounds the via 109. In some embodiments, the first isolation layer 109 aincludes dielectric material such as oxide, silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, polymer, or the like.In some embodiments, a second sensor structure 110 is disposed over the first substrate 101. In some embodiments, a connection structure 110 a, a sensor material 110 band a second insulation layer 110 care arranged over the first substrate 101. In some embodiments, the connection structure 110 ais disposed over the first insulation layer 109 a. In some embodiments, the interconnect structure 110 ais disposed over the via 109 such that the interconnect structure 110 ais electrically connected to the conductive structure 103 via the via 109. In some embodiments, the connection structure 110 a, the via 109, the conductive structure 103, and the plug 107 are electrically connected. In some embodiments, the interconnect structure 110 ais a magnetic sensing electrode configured to send an electrical signal to the first substrate 101, the third substrate 106, or the second substrate 108. In some embodiments, the interconnect structure 110 ais a post-passivation interconnect (PPI) or part of a redistribution layer (RDL). In some embodiments, the interconnect structure 110 aincludes aluminum, copper, nickel, gold, tungsten, titanium, alloys thereof, or multi-layers thereof.In some embodiments, the sensor material 110 bis disposed over the first substrate 101 and at least partially covers the connection structure 110 a. In some embodiments, the sensor material 110 bis configured to be capable of sensing a magnetic field, such as a magnetic sensor material. In some embodiments, the connection structure 110 amay transmit an electrical signal corresponding to the magnetic field sensed by the sensor material 110 b. In some embodiments, the sensor material 110 bincludes AMR material, GMR material, TMR material, or other suitable materials.In some embodiments, the second insulation layer 110 cis disposed over the first substrate 101 and covers or surrounds the connection structure 110 aand the sensor material 110 b. In some embodiments, the second insulation layer 110 cis configured to protect the connection structure 110 aand the sensor material 110 b. In some embodiments, the second isolation layer 110 ccomprises dielectric material such as oxide, silicon dioxide, silicon oxynitride, silicon carbide, polymer, or the like.FIG. 3 is a schematic cross-sectional view of a semiconductor structure 300 in accordance with some embodiments of the present disclosure. In some embodiments, the semiconductor structure 300 has a similar configuration to the semiconductor structure 100 described above and shown in FIG. 1 or the semiconductor structure 100' described above and shown in FIG. 1A. In some embodiments of FIG. 3, the semiconductor structure 300 includes a connection structure 111 disposed over the second substrate 108. In some embodiments, the interconnect structure 111 electrically connects the first substrate 101, the third substrate 106, or the second substrate 108 to an external circuit or component. In some embodiments, the interconnect structure 111 includes an under bump metallization (UBM) pad 111 aand a conductive bump 111 bdisposed over the second substrate 108, the second sensor structure 110, or the interconnect structure 110 a.In some embodiments, the UBM pad 111 ais disposed over and electrically connected to a portion of the connection structure 110 a. In some embodiments, the UBM pad 111 ais electrically connected to the via 109 via the interconnect structure 110 a. In some embodiments, the UBM pad 111 ais disposed over or extends through the second insulation layer 110 cto the interconnect structure 110 a, via the second insulation layer 110 c. In some embodiments, the UBM pad 111 ais disposed over the portion of the interconnect structure 110 a, the via 109, or the plug 107. In some embodiments, the UBM pad 111 afunctions as a platform for receiving a conductive material to be electrically connected to an external circuit or component. In some embodiments, the UBM pad 111 ais electrically connected to the first substrate 101, the third substrate 106, or the second substrate 108 via the connection structure 110 a, the via 109, or the plug 107. In some embodiments, the UBM pad 111 ais a metallurgical layer or a metallurgical stack film over the interconnect structure 110 aand the second insulation layer 110 c. In some embodiments, the UBM pad 111 aincludes metal or metal alloys such as gold, silver, copper, nickel, tungsten, aluminum, palladium, and / or alloys thereof.In some embodiments, the conductive bump 111 bis disposed over the UBM pad 111 a. In some embodiments, the conductive bump 111 bis received by the UBM pad and is configured to be electrically connected to an external circuit or component. In some embodiments, the conductive bump 111b is mountable over another substrate or circuit board. In some embodiments, the conductive bump 111 bincludes fusible material such as solder, lead, tin, copper, gold, nickel, etc., or metal alloys such as a combination of lead, tin, copper, gold, nickel, etc. In some embodiments, the conductive bump 111 bincludes a solder paste mixture of metal powder and flux. In some embodiments, the conductive bump 111 bis a ball grid array (BGA) ball, a flip chip connection (C4) bump, micro bump, or the like. In some embodiments, the conductive bump 111 bis in a spherical or hemispherical shape. In some embodiments, the conductive bump 111 bis in a cylindrical shape. In some embodiments, the conductive bump 111 bis a solder ball, a metal pillar, or the like.FIG. 4 is a schematic cross-sectional view of a semiconductor structure 400 in accordance with some embodiments of the present disclosure. In some embodiments, the semiconductor structure 400 has a similar configuration to the semiconductor structure 200 described above and shown in FIG. 2 or the semiconductor structure 200' described above and shown in FIG. 2A. In some embodiments, in FIG. 4, the semiconductor structure 300 includes a connection structure 111 disposed over the first substrate 101. In some embodiments, the interconnect structure 111 electrically connects the first substrate 101, the third substrate 106, or the second substrate 108 to an external circuit or component. In some embodiments, the connection structure 111 includes a UBM pad 111 aand a conductive bump 111 bdisposed over the first substrate 101 or the second surface 101 bof the first substrate 101.In some embodiments, the UBM pad 111 ais disposed over and electrically connected to a portion of the interconnect structure 110 a. In some embodiments, the UBM pad 111 ais electrically connected to the via 109 via the interconnect structure 110 a. In some embodiments, the UBM pad 111 ais disposed over or extends through the second insulation layer 110 cto the connection structure 110 a. In some embodiments, the UBM pad 111 ais electrically connected to the first substrate 101, the third substrate 106, or the second substrate 108 via the connection structure 110 a, the via 109, or the plug 107. In some embodiments, the UBM pad 111 ais a metallurgical layer or a metallurgical stack film over the interconnect structure 110 aand the second insulation layer 110 c. In some embodiments, the UBM pad 111 aincludes metal or metal alloy such as gold, silver, copper, nickel, tungsten, aluminum, palladium, and / or alloys thereof.In some embodiments, the conductive bump 111 bis disposed over the UBM pad 111 a. In some embodiments, the conductive bump 111 bis received by the UBM pad and is configured to be electrically connected to an external circuit or component. In some embodiments, the conductive bump 111b is mountable over another substrate or circuit board. In some embodiments, the conductive bump 111 bincludes fusible material such as solder, lead, tin, copper, gold, nickel, etc., or metal alloys such as combinations of lead, tin, copper, gold, nickel, etc. In some embodiments, the conductive bump 111 bis a BGA ball, a C4 bump, micro bump, or the like. In some embodiments, the conductive bump 111b is in a spherical or hemispherical, cylindrical, or other suitable shape. In some embodiments, the conductive bump 111 bis a solder ball, a metal pillar, or the like.The present disclosure also discloses a method of manufacturing a semiconductor structure 100'. In some embodiments, a semiconductor structure 100' is formed by a method 500. The method 500 includes a number of operations, and the description and illustration should not be viewed as a limitation on the order of the operations. FIG. 5 is an embodiment of a method 500 for manufacturing a semiconductor structure 100. The method 500 includes a number of operations ( 501, 502, 503, 504, 505, and 506).In operation 501, a first substrate 101 is received or provided, as shown in FIG. 5A. In some embodiments, the first substrate 101 includes a first surface 101 aand a second surface 101 bopposing the first surface 101 a. In some embodiments, the first substrate 101 includes multiple circuits and multiple active elements such as transistors, etc., disposed over or in the first substrate 101. In some embodiments, the first substrate 101 includes components such as CMOS components, ASIC components, etc., disposed over or within the first substrate 101. In some embodiments, the first substrate 101 includes semiconductor materials such as silicon or other suitable materials. In some embodiments, the first substrate 101 is a silicon substrate or a silicon wafer. In some embodiments, the first substrate 101 is a CMOS substrate.In some embodiments, an IMD layer 102 is disposed over the first substrate 101. In some embodiments, the IMD layer 102, which includes a dielectric material 102 aand a conductive structure 103, is disposed over or within the first substrate 101. In some embodiments, the IMD layer 102 is formed by depositing a dielectric material 102 aover the first substrate 101 by chemical vapor deposition (CVD) operations or other suitable operations, removing some portions of the dielectric material 102 aby etching operations or other suitable operations, disposing a conductive material by electroplating, sputtering, or other suitable operations, and patterning the conductive material to become the conductive structure 103 by photolithography and etching operations or other suitable operations.In some embodiments, a dielectric layer 104 is disposed over the IMD layer 102, the conductive structure 103, or the first substrate 101. In some embodiments, the dielectric layer 104 is disposed by CVD processes or other suitable processes. In some embodiments, a first cavity 105 is formed that extends through the dielectric layer 104. The first cavity 105 extends from the dielectric layer 104 to the IMD layer 102 or the first substrate 101. In some embodiments, the first cavity 105 is formed by removing a portion of the dielectric layer 104 by photolithography and etching processes or other suitable processes.In operation 502, a third substrate 106 is disposed over the first substrate 101 as shown in FIG. 5B. In some embodiments, the third substrate 106 is a silicon substrate or a silicon wafer. In some embodiments, the third substrate 106 is a MEMS substrate. In some embodiments, the third substrate 106 includes electrical circuits formed on or in the first substrate 106. In some embodiments, the third substrate 106 includes a first sensor structure 106 adisposed over the dielectric layer 104, the IMD layer 102, or the first substrate 101. In some embodiments, the first sensor structure 106 ais configured to sense motion, such as a motion sensing device. In some embodiments, the first sensor structure 106 ais a gyroscope, an accelerometer, a single or multi-axis gyroscope, a single or multi-axis accelerometer, or a single or multi-axis motion sensing device. In some embodiments, the first sensor structure 106 ais disposed over or aligned with the first cavity 105. In some embodiments, the first sensor structure 106 ais movable within the first cavity 105 and relative to the first substrate 101, the IMD layer 102, or the dielectric layer 104.In some embodiments, the third substrate 106 is vertically stacked over the first substrate 101. In some embodiments, the third substrate 106 is bonded over the first substrate 101 by direct bonding, fusion bonding, or other suitable processes. In some embodiments, the third substrate 106 is directly bonded to the dielectric layer 104 by fusion bonding operations.In operation 503, a plug 107 is formed as shown in FIG. 5C. The plug 107 extends through the third substrate 106 and is electrically connected to the conductive pattern 103 disposed between the first substrate 101 and the third substrate 106. In some embodiments, the plug 107 is formed by removing a portion of the third substrate 106 and the dielectric layer 104 to form a first recess 107 aby photolithography and etching processes or other suitable processes, and fill a conductive material into the first recess 107 aby deposition, electroplating or other suitable processes. In some embodiments, the plug 107 is disposed over and electrically connected to the conductive structure 103.In some embodiments, a first bond pad 106 bis disposed over the third substrate 106 or the plug 107. In some embodiments, the first bond pad 106 ais disposed over and electrically connected to the plug 107. In some embodiments, the first bond pad 106 bis formed by sputtering, electroplating, or other suitable processes. In some embodiments, the first bond pad 106 bincludes aluminum, copper, or other suitable materials.In operation 504, a second substrate 108 is disposed over the third substrate 106, as shown in FIG. 5D. In some embodiments, the second substrate 108 is vertically stacked over the third substrate 106 or the first substrate 101. In some embodiments, the second substrate 108 is a cap substrate or cap wafer to cover the first substrate 101 and the third substrate 106. In some embodiments, the second substrate 108 comprises silicon or other suitable materials. In some embodiments, the second substrate 108 is bonded over the third substrate 106 by eutectic bonding processes or other suitable processes. In some embodiments, the second bond pad 108 bis disposed over the second substrate 108 and opposite the first bond pad 106 b. In some embodiments, the second substrate 108 is bonded to the third substrate 106 by bonding the first bond pad 106 band the second bond pad 108 b. In some embodiments, the second bond pad 108 bincludes germanium, silicon, or other suitable materials. In some embodiments, the first bond pad 106 band the second bond pad 108 bare bonded by eutectic bonding operations. In some embodiments, the second substrate is eutectically bonded to the third substrate 106 at a high temperature of greater than about 400° C.In some embodiments, a second cavity 108 ais formed that extends within the substrate 108. In some embodiments, the second cavity 108 ais formed by removing a portion of the second substrate 108 by photolithography and etching processes or other suitable processes. In some embodiments, the second cavity 108 ais formed over the first sensor structure 106 aand the first cavity 105. In some embodiments, the first cavity 105 is connected to the second cavity 108 aso as to become a cavity (the first cavity 105 and the second cavity 108 a). The cavity (the first cavity 105 and the second cavity 108 a) is disposed over the first substrate 101 and defined by the first substrate 101 and the third surface 108. In some embodiments, the first sensor structure 106 ais surrounded by and movable within the cavity.In operation 505, a via 109 is formed as shown in FIG. 5E. In some embodiments, via 109 extends through second substrate 108 and is electrically connected to plug 107. In some embodiments, the via 109 is formed by removing a portion of the second substrate 108 by photolithography and etching processes or other suitable processes to form a second recess 109 band filling a conductive material or semiconductor material into the first recess 107 aby deposition, electroplating or other suitable processes. In some embodiments, the second recess 109 bis filled with a metal such as copper to form the via 109 as a copper pillar. In some embodiments, the second recess 109 bis filled with a semiconductor material such as silicon, polysilicon, etc. to form the via 109 as a silicon pillar. In some embodiments, via 109 is disposed over and electrically connected to plug 107, second bond pad 108 b, or first bond pad 106 b. In some embodiments, a first insulation layer 109 ais disposed over the second substrate 108 and a sidewall of the second recess 109 bafter the second recess 109 bis formed. In some embodiments, the first insulation layer 109 ais disposed by CVD processes or other suitable processes. In some embodiments, the via 109 is surrounded by the first insulation layer 109 a. In some embodiments, the first insulation layer 109 ais arranged between the via 109 and the second substrate 108.In operation 506, a second sensor structure 110 is formed over the second substrate 108, as shown in FIG. 5F. In some embodiments, the second sensor structure 110 is configured to measure or sense a magnetic field. In some embodiments, the second sensor structure 110 is a magnetic field sensor, a magnetic sensor, a single or multiple axis magnetic sensor, a magnetometer, a geo-magnetic sensor, etc.In some embodiments, the interconnect structure 110 ais formed and disposed over the second substrate 108 and electrically connected to the via 109. In some embodiments, the interconnect structure 110 ais patterned and formed over the first isolation layer 109 aor the second substrate 108. In some embodiments, the interconnect structure 110 ais formed by disposing a conductive material over the second substrate 108 and then patterning the conductive material to become the interconnect structure 110 a. The conductive material is disposed by electroplating, sputtering, or other suitable processes. The conductive material is patterned by photolithography, etching, or other suitable processes. In some embodiments, the interconnect structure 110a is electrically connected to the via 109.In some embodiments, a sensor material 110 bis formed and disposed over the second substrate 108. In some embodiments, the sensor material 110 bcovers, at least in part, the interconnect structure 110 a. In some embodiments, the sensor material 110 bis configured to be able to measure a magnetic field. In some embodiments, the sensor material 110 bis a magnetic sensor material. In some embodiments, the sensor material 110 bis disposed over the second substrate 108 and a portion of the interconnect structure 110 aby deposition, photolithography, etching, or other suitable processes.In some embodiments, the second insulation layer 110 cis disposed over the second substrate 108 and covers the connection structure 110 aand the sensor material 110 b. In some embodiments, the second insulation layer 110 cis configured to protect the connection structure 110 aand the sensor material 110 b. In some embodiments, the second insulation layer 110 cis formed by CVD or other suitable processes.In some embodiments, the semiconductor structure 100' is formed as shown in FIG. 5F, which has a similar configuration as described above and is shown in FIG. 1A. The first substrate 101, the third substrate 106, and the second substrate 108 are vertically stacked one above the other, and thus an element size or a form factor of the semiconductor structure 100 is minimized. Further, while the second sensor pattern 110 is formed after bonding the second substrate 108 to the third substrate 106 under high temperature, the sensor material 110 b, which is easily destroyed by heat or high temperature, is not affected or damaged during the high temperature bonding operations.In some embodiments, a semiconductor structure 200' is formed by a method 600. The method 600 includes a number of acts, and the description and illustration should not be viewed as limiting the order of acts. FIG. 6 is an embodiment of the method 600 for manufacturing a semiconductor structure 200'. The method 600 includes a number of operations ( 601, 602, 603, 604, 605, and 606).In operation 601, a first substrate 101 is received or provided, as shown in FIG. 6A. Operation 601 is similar to operation 501 in FIG. 5A. In operation 602, a third substrate 106 is disposed over the first substrate 101 as shown in FIG. 6B. Operation 602 is similar to operation 502 in FIG. 5 b. In operation 603, a plug 107 is formed as shown in FIG. 6C. Operation 603 is similar to operation 503 in FIG. 5C. In operation 604, a second substrate 108 is disposed as shown in FIG. 6D. Operation 604 is similar to operation 504 in FIG. 5D.In operation 605, a via 109 is formed as shown in FIG. 6E. In some embodiments, the via 109 extends through the first substrate 101 to the IMD layer 102 and is electrically connected to the conductive structure 103 and the plug 107. In some embodiments, the via 109 is formed by removing a portion of the first substrate 101 and the IMD layer 102 by photolithography and etching operations or other suitable operations and filling a conductive material or semiconductor material into the second recess 109 aby deposition, electroplating, or other suitable operations. In some embodiments, the second recess 109 bis filled with a metal such as copper to form the via 109 as a copper pillar. In some embodiments, the second recess 109 bis filled with a semiconductor material such as silicon, polysilicon, etc. to form the via 109 as a silicon pillar. In some embodiments, via 109 is disposed over and electrically connected to plug 107, second bond pad 108 b, or first bond pad 106 b. In some embodiments, the via 109 is connected to the bottom portion 103 bof the conductive structure 103. In some embodiments, a first insulation layer 109 ais disposed over the first substrate 101 and a sidewall of the second recess 109 bafter the second recess 109 bis formed. In some embodiments, the first insulation layer 109 ais disposed by CVD processes or other suitable processes. In some embodiments, the via 109 is surrounded by the first insulation layer 109. In some embodiments, the first insulation layer 109 is arranged between the via 109 and the first substrate 101.In operation 606, a second sensor structure 110 is formed over the first substrate 101 as shown in FIG. 6F. In some embodiments, the second sensor structure 110 is configured to measure or sense a magnetic field. In some embodiments, the second sensor structure 110 is a magnetic field sensor, a magnetic sensor, a single or multiple axis magnetic sensor, a magnetometer, a geo-magnetic sensor, etc. In some embodiments, a connection structure 110 ais formed and disposed over the first substrate 101 and is electrically connected to the via 109. In some embodiments, the interconnect structure 110 ais patterned and formed over the first isolation layer 109 aor the first substrate 101. In some embodiments, the connection pattern 110 ais formed by disposing a conductive material over the first substrate 101 and then patterning the conductive material to become the connection pattern 110 a. The conductive material is disposed by electroplating, sputtering, or other suitable processes. The conductive material is patterned by photolithography, etching, or other suitable processes. In some embodiments, the interconnect structure 110a is electrically connected to the via 109.In some embodiments, a sensor material 110 bis formed and disposed over the first substrate 101. In some embodiments, the sensor material 110 bcovers, at least in part, the interconnect structure 110 a. In some embodiments, the sensor material 110 bis configured to be able to measure a magnetic field. In some embodiments, the sensor material 110 bis a magnetic sensor material. In some embodiments, the sensor material 110 bis disposed over the first substrate 101 and a portion of the interconnect structure 110 aby deposition, photolithography, etching, or other suitable processes.In some embodiments, the second insulation layer 110 cis disposed over the first substrate 101 and covers the connection structure 110 aand the sensor material 110 b. In some embodiments, the second insulation layer 110 cis configured to protect the connection structure 110 aand the sensor material 110 b. In some embodiments, the second insulation layer 110 cis formed by CVD or other suitable processes. In some embodiments, a semiconductor structure 200' is formed as shown in FIG. 6F, having a similar configuration as described above and shown in FIG. 2.In some embodiments, a semiconductor structure 300 is formed by a method 700. The method 700 includes a number of acts, and the description and illustration should not be viewed as a limitation on the order of acts. FIG. 7 is an embodiment of a method 700 for manufacturing a semiconductor structure 300. The method 700 includes a number of operations ( 701, 702, 703, 704, 705, 706, and 708).In operation 701, a first substrate 101 is received or provided, as shown in FIG. 7A. Operation 701 is similar to operation 501 in FIG. 5A. In operation 702, a third substrate 106 is disposed over the first substrate 101 as shown in FIG. 7B. Operation 702 is similar to operation 502 in FIG. 5B. In operation 703, a plug 107 is formed as shown in FIG. 7C. Operation 703 is similar to operation 503 in FIG. 5C. In operation 704, a second substrate 108 is disposed as shown in FIG. 7D. Operation 704 is similar to operation 504 in FIG. 5D. In operation 705, a via 109 is formed as shown in FIG. 7E. Operation 705 is similar to operation 505 in FIG. 5E. In operation 706, a second sensor structure 110 is formed over the second substrate 108, as shown in FIG. 7F. Operation 706 is similar to operation 506 in FIG. 5F.In operation 707, a UBM pad 111 ais formed over the second substrate 108 or a portion of the interconnect structure 110 a, as shown in FIG. 7G. In some embodiments, the UBM pad 111 ais electrically connected to the portion of the interconnect structure 110 aand the via 109. In some embodiments, the UBM pad 111 ais formed by removing a portion of the second insulation layer 110 cby etching or other suitable operations and disposing a conductive material by electroplating, sputtering, or other suitable operations. In some embodiments, the UBM pad 111 ais formed by patterning the conductive material by photolithography and etching processes or other suitable processes.In operation 708, a conductive bump 111 bis disposed over the UBM pad 111 a, as shown in FIG. 7H. In some embodiments, the conductive bump 111 bis formed by ball mounting operations, stencil printing operations (insertion of solder material over a stencil), or other suitable operations. In some embodiments, the conductive bump 111 bis reflowed or thermally cured after being disposed over the UBM pad 111 a. In some embodiments, the conductive bump 111 bis electrically connected to the UBM pad 111 a, the connection pattern 110 a, and the via 109. In some embodiments, the semiconductor structure 300 is formed as shown in FIG. 7H, which has a similar configuration as described above and shown in FIG. 3.In some embodiments, a semiconductor structure 400 is formed by a method 800. The method 800 includes a number of operations, and the description and illustration should not be viewed as a limitation on the order of the operations. FIG. 8 is an embodiment of a method 800 for manufacturing a semiconductor structure 400. The method 800 includes a number of operations (801, 802, 803, 804, 805, 806, 807, and 808).In operation 801, a first substrate 101 is received or provided, as shown in FIG. 8A. Operation 801 is similar to operation 601 in FIG. 6A. In operation 802, a third substrate 106 is disposed over the first substrate 101 as shown in FIG. 8B. Operation 802 is similar to operation 602 in FIG. 6B. In operation 803, a plug 107 is formed as shown in FIG. 8C. Operation 803 is similar to operation 603 in FIG. 6C. In operation 804, a second substrate 108 is disposed as shown in FIG. 8D. Operation 804 is similar to operation 604 in FIG. 6D. In operation 805, a via 109 is formed in the first substrate 101 as shown in FIG. 8E. Operation 805 is similar to operation 605 in FIG. 6E. In operation 806, a second sensor structure 110 is formed over the first substrate 101 as shown in FIG. 8F. Operation 806 is similar to operation 606 in FIG. 6F.In operation 807, a UBM pad 111 ais formed over the first substrate 101 bor a portion of the interconnect structure 110 a, as shown in FIG. 8G. In some embodiments, the UBM pad 111 ais electrically connected to the portion of the interconnect structure 110 aand the via 109. In some embodiments, the UBM pad 111 ais formed by removing a portion of the second insulation layer 110 cby etching or other suitable operations and disposing a conductive material by electroplating, sputtering, or other suitable operations. In some embodiments, the UBM pad 111 ais formed by patterning the conductive material by photolithography and etching processes or other suitable processes.In operation 808, a conductive bump 111 bis disposed over the UBM pad 111 a, as shown in FIG. 8H. In some embodiments, operation 808 is similar to operation 708 shown in FIG. 7H. In some embodiments, a semiconductor structure 400 is formed as shown in FIG. 8H, which has a similar configuration as described above and shown in FIG. 4.In some embodiments, a semiconductor structure 100 is formed by a method 900. The method 900 includes a number of operations, and the description and illustration should not be viewed as a limitation on the order of the operations. FIG. 9 is an embodiment of a method 900 for manufacturing a semiconductor structure 100. The method 900 includes a number of operations ( 901, 902, 903, 904, and 905).In operation 901, a first substrate 101 is received or provided, as shown in FIG. 9A. In some embodiments, the first substrate 101 includes multiple circuits and multiple active elements such as transistors, etc., disposed over or in the first substrate 101. In some embodiments, the first substrate 101 includes components such as CMOS components, ASIC components, etc., disposed over or within the first substrate 101. In some embodiments, the first substrate 101 includes semiconductor materials such as silicon or other suitable materials. In some embodiments, the first substrate 101 is a silicon substrate or a silicon wafer. In some embodiments, a CMOS substrate is incorporated into the first substrate 101.In operation 902, a first sensor structure 106 ais disposed over the first substrate 101 as shown in FIG. 9B. In some embodiments, the first sensor structure 106 ais configured to sense motion, such as a motion sensing device. In some embodiments, the first sensor structure 106 ais a gyroscope, an accelerometer, a single or multi-axis gyroscope, a single or multi-axis accelerometer, or a single or multi-axis motion sensing device.In operation 903, a second substrate 108 is disposed over the first substrate 101 and the first sensor structure 106 a, as shown in FIG. 9C. In some embodiments, the second substrate 108 is vertically stacked over the first substrate 101. In some embodiments, the second substrate 108 is a cap substrate or cap wafer to cover the first substrate 101. In some embodiments, the second substrate 108 comprises silicon or other suitable materials. In some embodiments, the second substrate 108 is bonded over the first substrate 101 by eutectic bonding or other suitable processes. In some embodiments, a bond pad 108 bis disposed over the second substrate 108. In some embodiments, the second substrate 108 is bonded over the first substrate 101 by the bond pad 108 bby eutectic bonding operations at a high temperature of greater than about 300° C.In some embodiments, a cavity 105 is formed by removing a portion of the first substrate 101 or the second substrate 108 by photolithography and etching processes or other suitable processes. The cavity 105 is disposed between the first substrate 101 and the second substrate 108. In some embodiments, the first sensor structure 106 ais surrounded by and movable within the cavity 105.In operation 904, a via 109 is formed as shown in FIG. 9D. In some embodiments, via 109 extends through second substrate 108. In some embodiments, the via 109 is formed by removing a portion of the second substrate 108 by photolithography and etching processes or other suitable processes to form a recess 109 band filling a conductive material or semiconductor material into the recess 109 bby deposition, electroplating, or other suitable processes. In some embodiments, the recess 109 bis filled with a metal such as copper to form the via 109 as a copper pillar. In some embodiments, the recess 109 bis filled with a semiconductor material such as silicon, polysilicon, etc., to form the via 109 as a silicon pillar. In some embodiments, via 109 is disposed over and electrically connected to bond pad 108 b. In some embodiments, a first insulation layer 109 ais disposed over the second substrate 108 and a sidewall of the recess 109 bafter the second recess 109 bis formed. In some embodiments, the first insulation layer 109 ais disposed by CVD processes or other suitable processes. In some embodiments, the via 109 is surrounded by the first insulation layer 109 a. In some embodiments, the first isolation layer 109 ais disposed between the via 109 and the second substrate 108.In operation 905, a second sensor structure 110 is formed over the second substrate 108, as shown in FIG. 9E. In some embodiments, the second sensor structure 110 is configured to measure or sense a magnetic field. In some embodiments, the second sensor structure 110 is a magnetic field sensor, a magnetic sensor, a single or multiple axis magnetic sensor, a magnetometer, a geo-magnetic sensor, etc.In some embodiments, the interconnect structure 110 ais formed and disposed over the second substrate 108 and electrically connected to the via 109. In some embodiments, the interconnect structure 110 ais patterned and formed over the first isolation layer 109 aor the second substrate 108. In some embodiments, the interconnect structure 110 ais formed by disposing a conductive material over the second substrate 108 and then patterning the conductive material to become the interconnect structure 110 a. The conductive material is disposed by electroplating, sputtering, or other suitable processes. The conductive material is patterned by photolithography, etching, or other suitable processes. In some embodiments, the interconnect structure 110a is electrically connected to the via 109.In some embodiments, a sensor material 110 bis formed and disposed over the second substrate 108. In some embodiments, the sensor material 110 bcovers, at least in part, the interconnect structure 110 a. In some embodiments, the sensor material 110 bis configured to be capable of sensing a magnetic field. In some embodiments, the sensor material 110 bis a magnetic sensor material. In some embodiments, the sensor material 110 bis disposed over the second substrate 108 and a portion of the interconnect structure 110 aby deposition, photolithography, etching, or other suitable processes.In some embodiments, the second insulation layer 110 cis disposed over the second substrate 108 and covers the connection structure 110 aand the sensor material 110 b. In some embodiments, the second insulation layer 110 cis configured to protect the connection structure 110 aand the sensor material 110 b. In some embodiments, the second insulation layer 110 cis formed by CVD or other suitable processes.In some embodiments, a semiconductor structure 100 is formed as shown in FIG. 9E, which has a similar configuration as described above and shown in FIG. 1. The first substrate 101 and the second substrate 108 are vertically stacked one above the other, and thus a device size or a form factor of the semiconductor structure 100 is minimized. Further, while the second sensor pattern 110 is formed after bonding the second substrate 108 over the first substrate 101 under high temperature, the sensor material 110 b, which is easily destroyed by heat or high temperature, is not affected or damaged during the high temperature bonding operations.In some embodiments, a semiconductor structure 200' is formed by a method 1000. The method 1000 includes a number of operations, and the description and illustration should not be viewed as a limitation on the order of the operations. FIG. 10 is an embodiment of a method 1000 for manufacturing a semiconductor structure 200'. The method 1000 includes a number of operations (1001, 1002, 1003, 1004, and 1005).In operation 1001, a first substrate 101 is received or provided, as shown in FIG. 9A. Operation 1001 is similar to operation 901 in FIG. 9A. In operation 1002, a first sensor structure 106 ais disposed over the first substrate 101 as shown in FIG. 10B. Operation 1002 is similar to operation 902 in FIG. 9B. In operation 1003, a second substrate 108 is disposed as shown in FIG. 10C. Operation 1003 is similar to operation 903 in FIG. 9C.In operation 1004, a via 109 is formed as shown in FIG. 10D. In some embodiments, the via 109 extends through the first substrate 101. In some embodiments, the via 109 is formed by removing a portion of the first substrate 101 by photolithography and etching processes or other suitable processes and filling a conductive material or semiconductor material into the recess 109 bby deposition, electroplating or other suitable processes. In some embodiments, the recess 109 bis filled with a metal such as copper to form the via 109 as a copper pillar. In some embodiments, the recess 109 bis filled with a semiconductor material such as silicon, polysilicon, etc., to form the via 109 as a silicon pillar. In some embodiments, the via 109 is disposed over and electrically connected to a conductive structure in the first substrate 101. In some embodiments, a first insulation layer 109 ais disposed over the first substrate 101 and a sidewall of the recess 109 b. In some embodiments, the first insulation layer 109 ais disposed by CVD processes or other suitable processes. In some embodiments, the via 109 is surrounded by the first insulation layer 109 a. In some embodiments, the first insulation layer 109 ais arranged between the via 109 and the first substrate 101.In operation 1005, a second sensor structure 110 is formed over the first substrate 101, as shown in FIG. 10E. In some embodiments, the second sensor structure 110 is configured to measure or sense a magnetic field. In some embodiments, the second sensor structure 110 is a magnetic field sensor, a magnetic sensor, a single or multiple axis magnetic sensor, a magnetometer, a geo-magnetic sensor, etc. In some embodiments, a connection structure 110 ais formed and disposed over the first substrate 101 and is electrically connected to the via 109. In some embodiments, the connection structure 110 ais patterned and formed over the first insulation layer 109 aor the first substrate 101. In some embodiments, the connection pattern 110 ais formed by disposing a conductive material over the first substrate 101 and then patterning the conductive material to become the connection pattern 110 a. The conductive material is disposed by electroplating, sputtering, or other suitable processes. The conductive material is patterned by photolithography, etching, or other suitable processes. In some embodiments, the interconnect structure 110a is electrically connected to the via 109.In some embodiments, a sensor material 110 bis formed and disposed over the first substrate 101. In some embodiments, the sensor material 110 bcovers, at least in part, the interconnect structure 110 a. In some embodiments, the sensor material 110 bis configured to be capable of sensing a magnetic field. In some embodiments, the sensor material 110 bis a magnetic sensor material. In some embodiments, the sensor material 110 bis disposed over the first substrate 101 and a portion of the interconnect structure 110 aby deposition, photolithography, etching, or other suitable processes.In some embodiments, the second insulation layer 110 cis disposed over the first substrate 101 and covers the connection structure 110 aand the sensor material 110 b. In some embodiments, the second insulation layer 110 cis configured to protect the connection structure 110 aand the sensor material 110 b. In some embodiments, the second insulation layer 110 cis formed by CVD or other suitable processes. In some embodiments, the semiconductor structure 200 is formed as shown in FIG. 10E, which has a similar configuration as described above and shown in FIG. 2.The present disclosure relates to a semiconductor structure including a plurality of devices integrated on a substrate. The semiconductor structure includes a substrate and one or more devices disposed over the substrate and integrated by a plurality of conductive vias. The integration of the devices through the conductive vias allows stacking of the devices over one another to reduce the element size of the semiconductor structure. Further, a magnetic sensor structure may be fabricated after completion of high temperature processes such as wafer bonding processes. As such, the magnetic sensor structure is not damaged or impaired by the high temperature.In some embodiments, a semiconductor structure includes a first substrate, a second substrate, a first sensor structure over the first substrate and between the first substrate and the second substrate, a via extending through the second substrate, and a second sensor structure over the second substrate and having a connection structure electrically connected to the via, and a sensor material at least partially covering the connection structure.In some embodiments, the via includes conductive material or semiconductor material. In some embodiments, the via electrically connects the interconnect structure to a bond pad disposed over the second substrate and opposite the interconnect structure. In some embodiments, the semiconductor structure further includes a first bond pad over the first substrate and a second bond pad over the via and the second substrate, wherein the second substrate is bonded over the first substrate by eutectic bonding the first bond pad to the second bond pad. In some implementations, the semiconductor structure further includes a first isolation layer over the second substrate and between the second substrate and the via. In some implementations, the semiconductor structure further includes a second isolation layer over the second substrate and covering the interconnect structure and the sensor material. In some embodiments, the first sensor structure is movable within a cavity defined by the first substrate and the second substrate. In some embodiments, the first sensor structure is an accelerometer, a gyroscope, or a motion sensing device. In some embodiments, the sensor material is a magnetic sensor material for sensing a magnetic field and the connection structure is a magnetic sensing electrode for sending an electrical signal corresponding to the magnetic field sensed by the sensor material. In some embodiments, the sensor material includes anisotropic magnetoresistive (AMR) material, giant magnetoresistive (GMR) material, or tunnel magnetoresistive (TMR) material. In some embodiments, the semiconductor structure further includes a UBM pad over a portion of the interconnect structure and electrically connected to the via, and a conductive bump over the UBM pad.In some embodiments, a semiconductor structure includes a first substrate having a first surface and a second surface opposite the first surface, a second substrate over the first surface of the first substrate, a first sensor structure over the first surface of the first substrate and between the first substrate and the second substrate, a via traversing the first substrate, and a second sensor structure over the second surface of the first substrate, and having a connection structure electrically connected to the via, and a sensor material at least partially covering the connection structure.In some embodiments, the via extends from the second surface of the first substrate to the first surface of the first substrate. In some implementations, the semiconductor structure further includes a first isolation layer over the first substrate and between the first substrate and the via. In some embodiments, the semiconductor structure further includes a second isolation layer over the first substrate and covering the interconnect structure and the sensor material. In some embodiments, the semiconductor structure further comprises a cavity between the first substrate and the second substrate and surrounding the first sensor structure, wherein the cavity is in a vacuum or has a gas pressure of less than about 1 atmospheric pressure (atm).In some embodiments, a method of manufacturing a semiconductor structure includes receiving a first substrate, disposing a first sensor structure, disposing a second substrate over the first substrate and the first sensor structure, forming a via extending through the second substrate, forming a second sensor structure having a connection structure disposed over the second substrate and electrically connected to the via, and a sensor material at least partially covering the connection structure.In some embodiments, forming the via includes removing a portion of the second substrate to form a recess and filling the recess with a conductive material or semiconductor material. In some embodiments, disposing the second substrate includes bonding the second substrate over the first substrate through eutectic bonding operations. In some embodiments, the method further includes disposing a first isolation layer over the second substrate and between the second substrate and the via, disposing a second isolation layer covering the interconnect structure and the sensor material, forming a cavity disposed between the first substrate and the second substrate and surrounding the first sensor structure.

Claims

A semiconductor structure (100, 200, 300, 400) comprising: a first substrate (101); a second substrate (108); a third substrate (106) disposed between the first substrate (202) and the second substrate (108); a plug (107) extending through the third substrate (101); a first sensor structure (106a) over the first substrate (101) and between the first substrate (101) and the second substrate (108); a via (109) extending through the second substrate (108); a second sensor structure (110) over the second substrate (108) and having a connection structure (110a) electrically connected to the via (109) and a sensor material (110b) at least partially covering the connection structure (110a); and wherein the second substrate (108) is connected to the first substrate (101) via the via (109) and the plug (107).The semiconductor structure (100, 200, 300, 400) of claim 1, wherein the via (109) comprises conductive material or semiconductor material.The semiconductor structure of claim 1 or 2, wherein the via (109) electrically connects the interconnect structure (110a) to a bond pad disposed over the third substrate (106) and opposite the interconnect structure (110a).The semiconductor structure (100, 200, 300, 400) of any preceding claim, further comprising a first bond pad (106b) over the first substrate (101) and a second bond pad (108b) over the via (109) and the third substrate (106), wherein the second substrate (108) is bonded over the third substrate (106) to the second bond pad by eutectic bonding of the first bond pad.The semiconductor structure (100, 200, 300, 400) of any preceding claim, further comprising a first isolation layer (109a) over the second substrate (108) and between the second substrate (108) and the via (109).The semiconductor structure (100, 200, 300, 400) of any preceding claim, further comprising a second insulation layer (110c) over the second substrate (108) covering the interconnect structure (110a) and the sensor material (110b).The semiconductor structure (100, 200, 300, 400) of any preceding claim, wherein the first sensor structure (106a) is movable within a cavity (105) defined by the first substrate (101) and the second substrate (108).The semiconductor structure (100, 200, 300, 400) of any preceding claim, wherein the first sensor structure (106a) is an accelerometer, a gyroscope, or a motion sensing device.The semiconductor structure (100, 200, 300, 400) of any of the preceding claims, wherein the sensor material (110b) is a magnetic sensor material (110b) for sensing a magnetic field, and the connection structure (110a) is a magnetic sensing electrode for sending an electrical signal corresponding to the magnetic field sensed by the sensor material (110b).The semiconductor structure (100, 200, 300, 400) of any preceding claim, wherein the sensor material (110b) comprises anisotropic magnetoresistive material (AMR), giant magnetoresistive material (GMR), or tunnel magnetoresistive material (TMR).The semiconductor structure (100, 200, 300, 400) of any preceding claim, further comprising a UBM pad (111a) over a portion of the interconnect structure (110a) and electrically connected to the via (109), and a conductive bump (111b) over the UBM pad (111a).A semiconductor structure (100, 200, 300, 400) comprising: a first substrate (101) having a first surface and a second surface opposite the first surface; a second substrate (108) over the first surface of the first substrate (101); a third substrate (106) disposed between the first substrate (202) and the second substrate (108); a plug (107) extending through the third substrate (106); a first sensor structure (106a) over the first surface of the first substrate (101) and between the first substrate (101) and the second substrate (108); a via (109) extending through the first substrate (101); and a second sensor structure (110) over the second surface of the first substrate (101) and having a connection structure (110a) electrically connected to the via (109) and a sensor material (110b) at least partially covering the connection structure (110a); and wherein the second substrate (108) is connected to the first substrate (101) via the via (109) and the plug (107).The semiconductor structure (100, 200, 300, 400) of claim 12, wherein the via (109) extends from the second surface of the first substrate (101) to the first surface of the first substrate (101).The semiconductor structure (100, 200, 300, 400) of claim 12 or 13, further comprising a first isolation layer (109a) over the first substrate (101) and between the first substrate (101) and the via (109).The semiconductor structure (100, 200, 300, 400) of any of claims 12 to 14, further comprising a second insulation layer (110c) over the first substrate (101) covering the interconnect structure (110a) and the sensor material (110b).The semiconductor structure (100, 200, 300, 400) of any of claims 12 to 15, further comprising a cavity (105) between the first substrate (101) and the second substrate (108) and surrounding the first sensor structure (106a), wherein the cavity (105) is in a vacuum or has a gas pressure of less than about 1 atmospheric pressure (atm).A method of manufacturing a semiconductor structure (100, 200, 300, 400), comprising: receiving a first substrate (101); depositing a first sensor structure (106a); disposing a third substrate (106) over the first substrate (101); forming a plug (107) extending through the third substrate (106); depositing a second substrate (108) over the third substrate (106) and the first sensor structure (106a); forming a via (109) extending through the second substrate (108); and forming a second sensor structure (110) having a connection structure (110a) disposed over the second substrate (108) and electrically connected to the via (109) and a sensor material (110b) at least partially covering the connection structure (110a); wherein the second substrate (108) is connected to the first substrate (101) via the via (109) and the plug (107).The method of claim 17, wherein forming the via (109) comprises removing a portion of the second substrate (108) to form a recess and filling the recess with a conductive or semiconductor material.The method of claim 17 or 18, wherein disposing the second substrate (108) comprises bonding the second substrate (108) over the third substrate (106) by eutectic bonding operations.The method of any of claims 17 to 19, further comprising: disposing a first insulation layer (109a) over the second substrate (108) and between the second substrate (108) and the via (109); disposing a second insulation layer (110a) covering the connection structure (110a) and the sensor material (110b); forming a cavity (105) between the first substrate (101) and the second substrate (108) surrounding the first sensor structure (106a).

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