Component for displaying a pictogram and method for producing a component
The integration of a mirror layer and frame-like structure in a semiconductor component simplifies the production and enhances compactness and contrast in displaying pictograms, addressing the bulkiness and complexity of existing technologies.
Patent Information
- Application Number
- DE102016116986
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2016-09-09
- Publication Date
- 2025-07-31
- Estimated Expiration
- 2036-09-09
AI Technical Summary
Existing optoelectronic components for displaying pictograms are bulky and require complex manufacturing processes involving masks, limiting their compactness and efficiency.
A semiconductor component with a mirror layer integrated between the semiconductor body and carrier, defining the pictogram contour, and a frame-like structure for high contrast, eliminating the need for masks and simplifying production through laser-defined trenches.
Enables compact and efficient display of pictograms with high contrast and simplified manufacturing, utilizing a mirror layer and frame-like structure to define illuminated regions without additional masks.
Smart Images

Figure 00000000_0000_ABST
Abstract
Claims
[1] Component (100) with a carrier (1), a semiconductor body (2) and a mirror layer (3) located therebetween, wherein - the semiconductor body has an active layer (23) which is designed to generate light during operation of the component, - the component has a main surface (101) which illuminates during operation of the component, wherein luminous areas of the main surface represent visually detectable information in the form of a pictogram (P), - the pictogram, when viewed from above on the main surface, has a contour which is at least partially defined by a contour of the mirror layer, - the mirror layer is designed to electrically contact the semiconductor body, and - the component, when viewed from above on the main surface, has an outline that differs from the contour of the pictogram. [2] Component according to claim 1, wherein the semiconductor body (2) and the pictogram (P) have similar outer contours in a plan view of the main surface (101). [3] Component according to claim 1, wherein the semiconductor body (2) and the pictogram (P) have different outer contours in plan view of the main surface (101). [4] Component according to one of the preceding claims, in which the mirror layer (3) and the pictogram (P) have similar outer contours in plan view of the main surface (101). [5] Component according to one of the preceding claims, which has a frame-like structure (6, 61, 62) which, in a plan view of the main surface (101), laterally encloses the mirror layer (3) and / or the pictogram (P) at least in regions, wherein the frame-like structure (6, 61, 62) is designed at least in regions as a contact structure (61) for electrically contacting a first semiconductor layer (21) of the semiconductor body (2), wherein the active layer (23) is arranged in the vertical direction between the first semiconductor layer and the mirror layer (3). [6] Component according to the preceding claim, wherein the semiconductor body (2) has a second semiconductor layer (22), wherein the active layer (23) is arranged between the first semiconductor layer (21) and the second semiconductor layer and the contact structure (61) extends in the vertical direction from the carrier (1) to the first semiconductor layer. [7] Component according to one of claims 1 to 4, which has a frame-like structure (6, 61, 62) which, in a plan view of the main surface (101), laterally encloses the mirror layer (3) and / or the pictogram (P) at least in regions, wherein the frame-like structure (6, 61, 62) is formed at least partially from a radiation-absorbing material. [8] Component according to one of claims 1 to 4 or 7, which has a via (81) which extends through the mirror layer (3) and the active layer (23) for electrically contacting a first semiconductor layer (21) of the semiconductor body (2). [9] Component according to one of the preceding claims, in which - the semiconductor body (2) in plan view of the carrier (1) completely covers the mirror layer (3) and has an outer contour which differs from the outer contour of the mirror layer, and - an electrically non-contactable material is arranged at least on edge regions of the semiconductor body which are not covered by the mirror layer. [10] Component according to one of the preceding claims, in which the carrier (1) has a metallic carrier layer (4), a first through-contact (41) and a second through-contact (42), wherein - the first via is laterally spaced from the second via by an intermediate region (40), and - the metallic carrier layer laterally bridges the intermediate region in a plan view of the main surface (101). [11] Component according to the preceding claim, in which the carrier (1) has an electrically insulating molded body (5) which laterally encloses the first through-contact (41) and the second through-contact (42) and fills the intermediate region (40). [12] Component according to one of the preceding claims, which is designed as an optoelectronic radiation-emitting semiconductor chip, wherein the component has the carrier (1) as the only carrier of the semiconductor chip. [13] A component according to any one of the preceding claims, wherein the pictogram (P) is a character or a series of characters from a group consisting of letters, numbers, everyday symbols, figurative marks, company logos, warning signs, characters, traffic signs, prohibition signs and information signs. [14] Component according to one of the preceding claims, in which an optical element (7) is arranged on the semiconductor body (2), wherein the optical element is arranged to project the pictogram. [15] Method in which a component (100) or a plurality of components (100) according to claim 1 is produced, and in which the semiconductor body (2) is structured at wafer level such that the mirror layer (3) and the semiconductor body have similar outer contours which define the contour of the pictogram (P) to be displayed. [16] Method in which a component (100) or a plurality of components (100) according to claim 1 is produced, and in which the mirror layer (3) is formed at the wafer level in such a way that the mirror layer has an outer contour which defines the contour of the pictogram (P) to be displayed, wherein - the semiconductor body, in a plan view of the carrier (1), completely covers the mirror layer and has an outer contour which differs from the outer contour of the mirror layer, and - an electrically non-contactable material is applied at least to edge regions of the semiconductor body which are not covered by the mirror layer. [17] Method in which a component (100) or a plurality of components (100) according to claim 1 is produced, and in which a surface of the semiconductor body (3) facing the carrier (2) is electrically inactivated in some areas to define the contour of the pictogram (P). [18] Component (100) with a carrier (1), a semiconductor body (2) and a mirror layer (3) located therebetween, wherein - the semiconductor body has an active layer (23) which is designed to generate light during operation of the component, - the component has a main surface (101) which illuminates during operation of the component, wherein luminous areas of the main surface represent visually detectable information in the form of a pictogram (P), - the pictogram, when viewed from above on the main surface, has a contour which is at least partially defined by a contour of the mirror layer, - the construction element has an outline in plan view of the main surface that differs from the contour of the pictogram, - which has a frame-like structure (6, 61, 62) which, in plan view of the main surface (101), laterally encloses the mirror layer (3) and / or the pictogram (P) at least in some areas, and - the frame-like structure (6, 61, 62) is designed at least in regions as a contact structure (61) for electrically contacting a first semiconductor layer (21) of the semiconductor body (2), wherein the active layer (23) is arranged in the vertical direction between the first semiconductor layer and the mirror layer (3).
Citation Information
Patent Citations
Radiation-emitting thin-film semiconductor chip and method for manufacturing a radiation-emitting thin-film semiconductor chip
DE102008021620A1
Optical device for improving the black panel surface
DE102009022348A1
Optoelectronic semiconductor devices
DE102014108300A1
Electroluminescent display device and method for its manufacture
DE2716205A1
Optoelectronic projection device
US20110241031A1