Method for manufacturing an optoelectronic device

Abstract

Method (100) for manufacturing an optoelectronic device (101, 301, 401), comprising the method in the sequence: - Providing (120) a substrate (102) having a first state which has a non-planar shape, - Transformation (140) of the substrate (102) into a second state by fixing the substrate (102) in the second state by means of a releasable mechanical connection having at least one clamp (112), wherein the at least one clamp (112) has a shape memory material, wherein the second state has a planar or substantially planar shape, - Forming (160) at least one optoelectronic component (104) on the substrate (102), - Transformation (180) of the substrate (102) into a third state, - where the third state is the same or essentially the same as the first state.

Description

[0001] The invention relates to a method for manufacturing an optoelectronic device.

[0002] The following publications relate to a method and / or an optoelectronic device: US 2015 / 0 171 354 A1, JP 2001 - 118 680 A, US 2014 / 0 072 771 A1, US 2016 / 0 313 769 A1, US 2009 / 0 124 062 A1.

[0003] Organic optoelectronic components, also known as organic optoelectronic devices, are finding increasingly widespread application. For example, organic light-emitting diodes (OLEDs) are increasingly being used in general lighting, such as as area light sources. An optoelectronic component with an organic light-emitting diode as its emission unit has a multitude of (organic) layers. Currently, there is growing interest in OLED light panels or OLED displays that exhibit a 3D appearance.

[0004] To give OLED light panels or OLED displays a permanent 3D or 2.5D appearance, they are typically mounted onto a correspondingly 3D-shaped holder made of plastic or metal, for example using an adhesive. A 2.5D appearance is understood as a two-dimensional surface with depth information.

[0005] Fixing the OLED light panels or OLED displays to this 3D-shaped holder using this method requires force to overcome the holder's restoring forces. This force is exerted, among other things, through pressure on the active area of ​​the OLED, which can lead to defects in the OLED. For example, the pressure can cause particle contaminants to be pressed into the organic layers of the OLED, which in turn can lead to a short circuit and failure of the OLED device.

[0006] To produce OLED light surfaces or OLED displays with a 3D or 2.5D appearance, it is also known to temporarily fix the OLEDs to a negative mold, for example using a vacuum, followed by bonding the OLEDs into the actual mold (positive mold) using an adhesive. During the curing of the adhesive, the OLEDs are held in place between the mold and the negative mold.

[0007] The object of the invention is to provide a cost-effective, simple method for manufacturing an optoelectronic device with at least one optoelectronic component having a 3D or 2.5D appearance, wherein the method prevents or avoids the occurrence of defects in the at least one optoelectronic component of the optoelectronic device during its manufacture.

[0008] The method that prevents or avoids defects in the optoelectronic components of the optoelectronic device should alternatively or additionally be carried out in such a way that no external forces are required on the active surface to transform the optoelectronic device with a 3D or 2.5D appearance, for example, no or essentially no mechanical pressure is exerted on the active surface.

[0009] Another object of the invention is to provide an optoelectronic device produced by the method, the shape of which represents a 3D or 2.5D appearance that is free or substantially free of compressions and / or elongations.

[0010] In various aspects, a method for manufacturing an optoelectronic device is provided. The method includes providing a substrate. The substrate has a first state, which is unplanar. The method further includes transforming the substrate into a second state. The second state has a planar or substantially planar shape. The method further includes forming at least one optoelectronic component on the substrate. The method also includes transforming the substrate into a third state. The third state is the same as or substantially the same as the first state.

[0011] This allows the at least one optoelectronic component to be formed on a planar or essentially planar substrate, simplifying the process and procedural conditions. Furthermore, the method enables the optoelectronic component to be easily transformed on the substrate into a non-planar, i.e., 3D or 2.5D, appearance. This prevents pressure, i.e., mechanical stress, from acting directly on the at least one optoelectronic component, for example, its encapsulation structure.

[0012] The optoelectronic component is formed on a substrate surface. The substrate surface on which the optoelectronic component is formed can be planar, for example, with low roughness. Low roughness, for instance, has a medium roughness in the range of approximately 0.1 nm to approximately 50 nm. However, the substrate and / or its surface can also be unplanar at the microscopic or macroscopic level, exhibiting, for example, waviness, curvature, or kink, such as a convex shape. In the following, when the planar or unplanar substrate or surface is described, the microscopic or macroscopic planarity of the substrate or its surface is meant.

[0013] When forming the at least one optoelectronic device, the surface of the substrate has a planar shape. This means that the at least one optoelectronic device can be formed on a planar or substantially planar surface of the substrate, which simplifies the process and procedure conditions.

[0014] The term "unplanar shape" is used in this description to mean that the shape has at least one kink or curvature on its surface. The unplanar surface is the surface on which the at least one optoelectronic component is applied or formed after the substrate's unplanar surface has been transformed into a planar or substantially planar surface. For example, in the first state, the substrate has two coplanar surfaces that exhibit a kink or curvature. The substrate itself may also have at least one kink or curvature in the first state. For example, the substrate may be a film or a sheet. For example, the substrate may have been wound on a roll and exhibits a curvature from this winding. In this respect, the substrate is unplanar, i.e., uneven or not flat.

[0015] The term "substrate" is used here to mean a support on which at least one optoelectronic component can be formed, i.e., deposited or applied. A molten material, such as a molding compound, is not a substrate in this sense. However, a substrate can be formed from the molten material, for example, by shaping and solidifying it into a predetermined form.

[0016] In a further development, the unplanar shape exhibits at least one curvature or kink. Visually, the substrate thus has a shape that results in a 3D or 2.5D appearance of the optoelectronic device.

[0017] In a further development, the substrate possesses a shape-memory material. This causes the substrate to form a shape, for example, to be articulated, which it can then revert to after a mechanical deformation, such as an elastic deformation, by means of an external stimulus.

[0018] In a further refinement, the shape memory material comprises a metallic alloy or at least a polymer. If the shape memory material is a metallic alloy, this ensures that the heat generated during operation of the optoelectronic device is dissipated or evenly distributed. If the shape memory material is a polymer, this allows the optoelectronic device to be easily recycled.

[0019] In a further refinement, the transformation of the substrate from the first state to the second state involves a phase transition of the shape memory material. This phase transition can be, for example, a discontinuous, martensitic, or continuous phase transition. This phase transition results in the shape memory material exhibiting stable phases in the second state, thus stabilizing the substrate in that state.

[0020] In a further development, the substrate is initially unplanar, meaning it intrinsically possesses an unplanar shape. Alternatively, the substrate is initially planar and is then brought into an unplanar shape, for example, by means of embossing. This allows the shape-memory material of the substrate to be imprinted with a permanent, unplanar shape.

[0021] In a further development, the transformation of the substrate from the first state to the second state involves mechanical deformation. This mechanical deformation causes a mechanical deformation, for example, an elastic deformation of the substrate, such as a substrate containing shape-memory material.

[0022] The transformation of the substrate from the first state to the second state involves fixing it in the second state by means of a releasable mechanical connection, for example, by clamping, such as with a clamp or clamping connection. The releasable mechanical connection is formed by means of a connecting element or connection structure, for example, by positioning and clamping the substrate between a holder and a clamp. Alternatively or additionally, the transformation of the substrate from the first state to the second state involves fixing it by means of at least one property of the shape memory material. This results in the substrate having a flat or planar surface, which is stable and / or stabilized, allowing the optoelectronic component to be formed in a simple, stable, and practical manner. This further enables the formation or...Fixing the at least one optoelectronic component on the substrate 102, wherein the formation of the at least one optoelectronic component on the substrate 102 is free from external forces on the at least one optoelectronic component.

[0023] The detachable mechanical connection has at least one clamp. This clamp incorporates a shape-memory material. The clamp with shape-memory material enables the stabilization of the substrate in a planar or substantially planar shape.

[0024] In a further refinement, the formation of at least one optoelectronic component on the substrate involves lamination of the component onto the substrate. This results in a metallurgical bond between the component and the substrate. Alternatively or additionally, the formation of the component on the substrate includes at least the formation of a first electrode on the substrate, the formation of an organically functional layer stack on the first electrode, and the formation of a second electrode on the organically functional layer stack. This enables a more cost-effective formation of multiple optoelectronic components that share a common substrate.

[0025] In a further refinement, the transformation of the substrate from the second state to the third state involves the release of the detachable mechanical connection, for example, the removal of at least one clamp. Alternatively or additionally, the transformation of the substrate from the second state to the third state involves a further phase transition of the shape memory material, for example, by means of a stimulus. The substrate and / or the connecting element can contain the shape memory material. This enables the transformation of the optoelectronic device or the substrate of the optoelectronic device into a non-planar, for example, convexly curved shape, without the need for an external force, such as pressure, i.e., a mechanical load on the optoelectronic component, for example, on the active surface of the at least one optoelectronic component or its encapsulation layer.

[0026] In a further refinement, the transformation of the substrate from the second state to the third state involves the deformation of at least one clamp made of shape-memory material, for example, by means of a stimulus. The at least one clamp with shape-memory material supports or protects the edge region of the optoelectronic device during the transformation of the substrate into the third state. This reduces or prevents delamination of the at least one optoelectronic component from the substrate during the transformation.

[0027] In a further refinement, the process includes the formation of an encapsulation layer after the formation of at least one optoelectronic component on the substrate. The formation of the encapsulation layer and the transformation of the substrate into the third state can occur simultaneously. Forming the encapsulation layer after the formation of the at least one optoelectronic component on the substrate and before the transformation of the substrate into the third state can result in a stabilized transformation of the substrate into the third state. This reduces or prevents delamination of the at least one optoelectronic component from the substrate.

[0028] In another aspect, a method for manufacturing an optoelectronic device is provided. The method involves providing a first substrate and a second substrate. The first substrate and the second substrate are each provided in an unplanar shape, i.e., they are intrinsically unplanar. Alternatively, the first substrate and the second substrate are transformed from a planar shape into the unplanar shape, for example, by means of a die-casting process.

[0029] The process further involves transforming the first substrate and the second substrate into a planar or substantially planar form.

[0030] The method further comprises forming at least one optoelectronic device on the first substrate, which has a planar or substantially planar shape, or on the second substrate, which also has a planar or substantially planar shape. The at least one optoelectronic device is sandwiched between the first and second substrates, for example, arranged in a specific configuration.

[0031] The process further comprises transforming the first substrate with the planar shape or substantially planar shape and the second substrate with the planar shape or substantially planar shape into a non-planar shape.

[0032] The arrangement of the at least one optoelectronic component between a first substrate and a second substrate allows the at least one optoelectronic component to be formed in the neutral fiber or in the region of the neutral fiber when the first and second substrates are transformed into a non-planar shape, for example, when the optoelectronic device is transformed into a convex curved shape. This enables an optoelectronic device with a 3D or 2.5D appearance in which at least one optoelectronic component is free or substantially free from compression or strain. This reduces the mechanical stress on the optoelectronic component.

[0033] In a further training exercise, an optoelectronic device is provided. The optoelectronic device comprises a first substrate with a first unplanar shape, a second substrate with a second unplanar shape, and at least one optoelectronic component. The optoelectronic component is sandwiched between the first and second substrates. The first substrate contains a first shape-memory material, and the second substrate contains a second shape-memory material. The first shape-memory material can be the same as or different from the second shape-memory material. The second unplanar shape is the same as, or substantially the same as, the first unplanar shape. The first substrate is coplanar or substantially coplanar with the second substrate.

[0034] This allows at least one optoelectronic component to be located in or near the neutral fiber. This results in an optoelectronic device with a 3D or 2.5D appearance, in which the mechanical stress on the optoelectronic component due to compression or stretching is reduced or avoided.

[0035] In various advanced training courses, the optoelectronic device and its components, for example the at least one optoelectronic component and the first and second substrate, have the same features as the optoelectronic device implemented in the process and vice versa.

[0036] Exemplary embodiments of the invention are shown in the figures and are explained in more detail below.

[0037] They show: Fig. 1A, Fig. 1B, Fig. 1C, Fig. 1D schematic sectional views of a method for manufacturing an optoelectronic device according to various embodiments; Fig. 2 a schematic cross-sectional view of an optoelectronic component according to various embodiments; Fig. 3A, Fig. 3B, schematic sectional views of a method for manufacturing an optoelectronic device according to various embodiments; and Fig. 4A, Fig. 4B, Fig. 4C, Fig. 4D schematic sectional views of a method for manufacturing an optoelectronic device according to various embodiments.

[0038] The following detailed description refers to the accompanying drawings, which form part of this description and in which specific embodiments are shown for illustration purposes, illustrating how the invention can be implemented. Since components of embodiments can be positioned in a number of different orientations, the directional terminology serves only for illustration and is in no way restrictive. It is understood that other embodiments may be used and structural or logical modifications may be made. It is understood that the features of the various embodiments described herein may be combined with one another, unless specifically stated otherwise. In the figures, identical or similar elements are designated with identical reference numerals where appropriate.

[0039] Within the scope of this description, the terms "connected," "attached," and "coupled" are used to describe both direct and indirect connections, direct or indirect links, and direct or indirect couplings. In the figures, identical or similar elements are labeled with identical reference symbols where appropriate.

[0040] For the purposes of this description, an optoelectronic device is understood to be an optoelectronic assembly comprising one, two, or more optoelectronic components. The optoelectronic device can, for example, be configured as a display or a light-emitting module.

[0041] Within the scope of this description, an optoelectronic component can be understood as a component that emits or absorbs electromagnetic radiation by means of a semiconductor device.

[0042] An electromagnetic radiation-absorbing component can be, for example, a solar cell or a photodetector.

[0043] An electromagnetic radiation-emitting component can, in various embodiments, be an electromagnetic radiation-emitting semiconductor component and / or be configured as an electromagnetic radiation-emitting diode, an organic electromagnetic radiation-emitting diode, an electromagnetic radiation-emitting transistor, or an organic electromagnetic radiation-emitting transistor. The radiation can be, for example, visible light, ultraviolet light, and / or infrared light. In this context, the electromagnetic radiation-emitting component can, for example, be configured as a light-emitting diode (LED), an organic light-emitting diode (OLED), a light-emitting transistor, or an organic light-emitting transistor.The light-emitting component can be part of an integrated circuit in various embodiments. Furthermore, multiple light-emitting components can be provided, for example, housed in a common package.

[0044] An organic optoelectronic device features an organic functional layer system, also referred to as an organic functional layer structure. This structure comprises or is composed of an organic material or mixture, which is designed, for example, to generate electromagnetic radiation from an applied electric current. The radiation can be, for instance, visible light, ultraviolet light, and / or infrared light. An organic light-emitting diode (OLED) is configured as a top emitter and / or a bottom emitter. In a bottom emitter, electromagnetic radiation is emitted from the electrically active region through the substrate.In a top emitter, electromagnetic radiation is emitted from the top of the electrically active area and not through the substrate.

[0045] A "shape memory material" is understood to be a material that possesses the property of temporarily or reversibly exhibiting a different shape than its original shape after mechanical deformation, such as elastic deformation, and of reverting to its original shape upon external stimulus. The shape memory material can be reshaped and modified to achieve specific configurations and shape changes. The phenomenon of shape memory is a function of the material itself, which the material acquires after suitable steps, for example, after reshaping the shape memory material above its transition temperature and then rapidly cooling it.

[0046] The term "permanent form" of shape memory material is a term specific to shape memory materials. It refers to a form of the shape memory material that is retained in the material's memory. The shape memory material is imprinted with the permanent form, for example, after reshaping it into a shape above its transition temperature and then rapidly cooling it. The permanent form can also be referred to as the original form of the shape memory material. After reshaping the shape memory material imprinted with the permanent form, it is reshaped back into the permanent form by means of a stimulus. In various embodiments where the substrate is made of or contains shape memory material, the permanent form is also understood as the initial state of the substrate.

[0047] The term "temporary shape" of shape memory material is a term specific to shape memory materials. It refers to the shape of the shape memory material that differs from its permanent shape. The temporary shape can be obtained, for example, after reshaping the substrate with the permanent shape, such as by mechanical deformation or elastic deformation of the shape memory material. The temporary shape is reversible from the permanent shape. It can also be referred to as the temporary form. In various embodiments where the substrate is made of or contains shape memory material, the temporary shape is also understood as a second state of the substrate.

[0048] Within the context of this description, an external stimulus can be understood as a change in a physical parameter or the value of a physical quantity that triggers the shape memory effect in a given shape memory material. For example, a stimulus for a wide variety of shape memory materials is a change in temperature above a specific switching temperature (also referred to as a transition or limit temperature). Such a switching temperature could be, for example, the glass transition temperature or the melting temperature of the shape memory material. Alternatively or additionally, irradiation with light of a specific wavelength, such as UV light, can trigger cross-linking of the shape memory material. Other stimuli can include a change in a magnetic field or a change in mechanical stress.

[0049] Within the context of this description, a 3D appearance of the optoelectronic device can be understood to mean that the spatial representation of an image of the optoelectronic device is three-dimensional. Within the context of this description, a 2.5D appearance of the optoelectronic device can be understood to mean that the spatial representation of an image of the optoelectronic device is two-dimensional with additional depth information.

[0050] Within the scope of this description, a neutral fiber of an optoelectronic component or optoelectronic device can be understood as the area of ​​the layer cross-section that is not subject to stretching or compression when bent, i.e., when tensile and compressive forces are applied to the cross-section.

[0051] In the bending area, the fabric or fabric mixture can be stretched on the outside of the layer cross-section with respect to the bending edge, while the fabric or fabric mixture is compressed on the inner edge.

[0052] The position of the neutral fiber within the cross-section of the optoelectronic device can depend on the elastic moduli of the layers within that cross-section. The neutral fiber can also be referred to as the neutral phase.

[0053] In this description, the term "reactive" is used to describe the property of agents, compounds, or additives to react with the components of the polymer, leading to chemical or physical cross-linking points in and with the polymer. This can be achieved by irradiation or treatment, such as temperature treatment (e.g., heating), IR irradiation, gamma radiation, beta radiation, a magnetic and / or electric field, or UV light.

[0054] Fig. Figure 1 shows a schematic sectional view of a method for manufacturing an optoelectronic device according to various embodiments.

[0055] The method for manufacturing an optoelectronic device comprises providing 120 a substrate 102, transforming 140 the substrate 102 into a second state, forming 160 at least one optoelectronic component 104 on the substrate 102, and transforming 180 the substrate 102 into a third state.

[0056] Upon provision of substrate 102, the substrate 102 exhibits a first state. The first state has a non-planar shape. In other words, the substrate has a non-planar shape in the first state. If the substrate is a shape-memory material, the first state represents the state of the substrate in which it has a permanent shape.

[0057] The second state exhibits a planar or essentially planar shape. In other words, the substrate has a planar or essentially planar shape in the second state. The planar or essentially planar shape refers essentially to the surface of the substrate on which the optoelectronic device is formed. If the substrate is a shape-memory material, the second state represents the state of the substrate in which it has the temporary shape.

[0058] The third state is the same as, or substantially the same as, the first state. In other words, in the third state, the substrate has a non-planar shape that is the same as, or substantially the same as, the non-planar shape in the first state—for example, similar to, i.e., derivable from, or identical to, that shape. If the substrate is a shape-memory material, the third state represents the state of the substrate in which, after reshaping it with the temporary shape, it has the permanent shape or a shape identical to the permanent shape.

[0059] The method for fabricating an optoelectronic device enables the formation of at least one optoelectronic component on a planar or substantially planar substrate. After the formation of the at least one optoelectronic component, the optoelectronic device is transformed into a third state such that it has a non-planar shape, for example, a convexly curved shape. This allows the fabrication of an optoelectronic device with a 3D or 2.5-dimensional appearance. By transforming the substrate with the at least one optoelectronic component, an optoelectronic device with a non-planar shape is easily produced. This prevents pressure, i.e., mechanical stress, from acting directly on the at least one optoelectronic component, for example, its encapsulation structure.This allows defects that previously occurred in the at least one optoelectronic component during its formation on the substrate to be reduced or avoided.

[0060] Fig. Figure 1A illustrates the provision 120 of the substrate 102 in the method for manufacturing the optoelectronic device 101 according to various embodiments.

[0061] In various embodiments, the unplanar shape exhibits at least one curvature and / or a kink. Within the scope of this description, a curvature can be a bend, a bulge, a flexure, or similar feature. Within the scope of this description, a kink can be a fold or similar feature. For a curvature, a radius of curvature is defined, which quantifies the degree of (un)planarity. No radius of curvature is defined for a kink, as the kink represents a discontinuity in the shape's contour.

[0062] In other words, when providing 120 of the substrate and / or when forming 180 of the substrate from the second state to the third state, the substrate 102 is designed such that it has a curvature and / or a kink. This makes it possible to form an optoelectronic device that has a 3D or 2.5D appearance without damaging the optoelectronic component during the forming process.

[0063] The substrate 102 is, for example, a film or a holder for the optoelectronic device 101. Alternatively or additionally, the substrate 102 is, for example, the substrate of the at least one optoelectronic component 104, for example, the common substrate for several optoelectronic components of the optoelectronic device 101.

[0064] Substrate 102, for example, is an elastic substrate, a pseudoelastic substrate, a viscoelastic substrate and / or a thermoelastic substrate.

[0065] In various embodiments, the substrate 102 comprises or is formed from a shape memory material. The shape memory material is, for example, a one-way shape memory material or a multi-way shape memory material, such as a two-way or a three-way shape memory material.

[0066] This results in the substrate being formed with a shape that it can resume after mechanical deformation, such as elastic deformation, by means of an external stimulus suitable for the shape memory material. This allows, for example, easier shipping of the optoelectronic device as a planar, thin body that can be easily assembled into its final 3D or 2.5D structure by the customer after purchase. Alternatively or additionally, it enables self-repair of the optoelectronic device. For example, after the optoelectronic device has been manufactured, an accidental mechanically induced deformation of the substrate may occur, such as an accidental mechanically induced deformation. The shape memory substrate can correct this accidental mechanically induced deformation by means of an external stimulus suitable for the shape memory material.By correcting the accidental mechanically induced deformation, it is understood that the substrate, which has been reshaped by the accidental mechanically induced deformation, returns to the shape encoded in the shape memory material by means of the external stimulus.

[0067] In various embodiments, the shape memory material comprises or is composed of a metallic alloy. The metallic alloy is, for example, a nickel-, copper-, iron-, copper-zinc-nickel-, copper-aluminum-nickel-, silver-nickel-, or gold-cadmium-based alloy, or combinations thereof. For example, the metallic alloy is a nickel-titanium or a nickel-titanium-copper-based alloy. For example, the metallic alloy is a mixture of nickel and titanium in a 1:1 ratio with respect to the number of atoms (also known as nitinol).

[0068] In various embodiments, the shape memory material comprises or is composed of at least one polymer, for example, two or three polymers. The at least one polymer may be, for example, a copolymer and / or a combination of at least two polymer materials. The at least one polymer may be, for example, an elastic polymer, a viscoelastic polymer, a pseudoplastic polymer, a thermoplastic polymer, and / or a thermoset polymer. The shape memory polymer may be, for example, a physically cross-linked polymer or a chemically cross-linked polymer. Examples of polymers or...Polymer materials include polyurethane (PUR), polyamide (PA), for example nylon 6 or nylon 66, polyester, for example polyethylene terephthalate (PET), polypropylene terephthalate (PPT), polycarbonate (PC), acrylonitrile butadiene styrene (ABS), vinyl polymer or polyolefin, for example polystyrene (PS), poly(1,4-butadiene), copolymer of polystyrene with poly(1,4-butadiene), polyvinyl chloride (PVC), polyvinylpyrrolidone (PVP), polyacrinitiril (PAN), polyethylene (PE), polypropylene (PP), polyethylene oxide (PEO), polyether, poly(2-methyl-2-oxazoline), polytetrahydrofuran, copolymer of poly(2-methyl-2-oxazoline) with polytetrahydrofuran, polyethylene oxide (PEO), copolymer of polyethylene terephthalate (PET) with polyethylene oxide (PEO), polynorbornene, polycyanate, maleic anhydride, etc.

[0069] Optionally, the shape memory material may contain polymer additives, such as crosslinkers, reactive oligomers, reactive fillers and / or other additives, such as glycerin, trimethylolpropane, dimethyl 5-isophthalate, antioxidants, UV absorbers, fillers, reinforcing materials, dyes, processing aids.

[0070] If the shape memory material is a metallic alloy, the heat generated during operation of the optoelectronic device is dissipated or evenly distributed. If the shape memory material is a polymer, the optoelectronic device can be recycled more easily.

[0071] The provision 120 of substrate 102, for example, involves the unplanar formation of the substrate 102. For instance, the substrate 102 is provided such that it has an unplanar shape. In other words, the substrate 102 is formed in a state that has an unplanar shape. Alternatively or additionally, the provision 120 of substrate 102 involves first providing the substrate 102 with a planar or substantially planar shape, followed by applying or reshaping the substrate 102 into a state that has an unplanar shape. In other words, the substrate 102 is formed planarly and then brought into the unplanar shape. For example, the change in the state of the substrate 102 from the planar shape to the unplanar shape is achieved by means of a die-casting process. In other words, the planar substrate 102 can be die-cast such that it has an unplanar shape. Furthermore, the embossing can be convexly curved.Alternatively or additionally, the embossing may include a crease. Furthermore, the embossing process takes place, for example, at a temperature in the range of approximately 300 °C to approximately 600 °C, or from approximately 400 °C to approximately 500 °C.

[0072] This results in the substrate being imprinted with a non-planar shape corresponding to the first state. This allows the substrate with the imprinted non-planar shape to be reshaped into another shape by means of mechanical stress, and after the mechanical stress is released, the substrate can be reshaped into a shape that is the same as, or substantially the same as, the non-planar shape corresponding to the first state.

[0073] In the event that the substrate 102 contains a shape memory material, the provision 120 of the substrate 102 involves imprinting the shape memory material with a permanent shape, for example, by reshaping the shape memory material into a shape above the transition value of the shape memory material, such as the transition temperature of the shape memory material, and then rapidly cooling the shape memory material. This imprints the substrate 102 with the permanent shape. The permanent shape of the substrate is a non-planar shape, for example, a convexly curved shape. In this case, the substrate with the shape memory material exhibits the first state, i.e., a non-planar shape, for example, a convexly curved shape.

[0074] By imprinting the shape memory material of the substrate with the permanent shape, it is made possible that the substrate, after being reshaped into a different state and / or a temporary shape, for example by means of a mechanical deformation, for example elastic deformation, by means of a stimulus, for example a change in the value of a physical quantity above the transition value of the shape memory material, for example the transition temperature of the shape memory material, is reshaped back into the first state and / or into the permanent shape.

[0075] Fig. Figure 1B illustrates a preliminary stage of the optoelectronic device 101 in the method for manufacturing the optoelectronic device 101 according to various embodiments. The optoelectronic device can correspond to one of the optoelectronic devices described above. The substrate and the shape memory material can, for example, be configured according to one of the embodiments described above.

[0076] As in Fig. As illustrated in Figure 1B, substrate 102 has a planar or essentially planar shape. The planar or essentially planar shape of the substrate represents the second state of substrate 102.

[0077] Substrate 102 may contain a shape memory material.

[0078] In various embodiments, the forming 140 of the substrate 102 with shape memory material from the first state to the second state involves a phase transition or phase transformation of the shape memory material.

[0079] This causes the shape memory material to exhibit stable phases in the second state through the phase transition. This enables stabilization of the substrate in the second state.

[0080] If the shape memory material is a metallic alloy or is formed from one, the metallic alloy exhibits at least a first crystal structure or phase in the first state and a second crystal structure or phase in the second state. The first and second crystal structures are different. The first crystal structure is the crystal structure of the metallic alloy as it is formed within the shape memory material. The first crystal structure thus represents the permanent form of the metallic alloy. The second crystal structure is a structure obtained, for example, through mechanical deformation, such as elastic deformation of the metallic alloy. The second crystal structure thus represents the temporary form of the metallic alloy.The metallic alloy can transform from the first crystal structure to the second crystal structure and vice versa. For example, the metallic alloy transforms from the first crystal structure to the second crystal structure by means of a mechanical deformation, such as elastic deformation, for example, by smoothing or flattening the substrate. Alternatively, the metallic alloy can transform from the second crystal structure to the first crystal structure by means of a stimulus that triggers the transformation, such as a change in the value of a physical quantity above the transition value of the metallic alloy, for example, above the transition temperature of the metallic alloy. The first crystal structure has one or more lattice parameters that differ from the lattice parameter(s) of the second crystal structure.This allows the substrate to have a different shape in the first crystal structure than in the second. For example, a lattice constant is a lattice parameter, which can result in different lattice forms in the crystal structures.

[0081] If the shape memory material comprises or is formed from a polymer or polymer mixture, it exhibits at least a first molecular network structure phase and a second molecular network structure phase. The first molecular network structure phase is the molecular network structure phase of the polymer or polymer mixture that is present in the polymer or polymer mixture containing the shape memory material. The first molecular network structure phase thus represents the permanent shape of the polymer or polymer mixture. The second molecular network structure phase is a structure that is obtained, for example, by mechanical deformation, such as elastic deformation of the polymer or polymer mixture. The second molecular network structure phase thus represents the temporary shape of the polymer or polymer mixture.The at least one polymer can transform from the first molecular network structure phase to the second molecular network structure phase and vice versa. For example, the polymer or polymer mixture transforms from the first molecular network structure phase to the second molecular network structure phase by means of a mechanical deformation, such as an elastic deformation, for example, by smoothing or flattening the substrate. Alternatively, the polymer or polymer mixture can transform from the second molecular network structure phase to the first molecular network structure phase by means of a stimulus that triggers the transformation in the metallic alloy, for example, a change in the value of a physical quantity above the transition value of the polymer or polymer mixture, such as the transition temperature of the polymer or polymer mixture.

[0082] Alternatively or additionally, the forming process 140 of the substrate 102 from the first state to the second state involves mechanical forming. For example, mechanical forming includes drawing, pressing, and / or rolling. Drawing can involve drawing the sides located at the outermost edge of the substrate 102. Rolling is, for example, flattening. The mechanical forming thus causes a mechanical deformation, for example, an elastic deformation of the substrate, such as a substrate with shape memory material.

[0083] In various embodiments, the forming process 140 of the substrate 102 from the first state to the second state includes a fixation. The fixation in the second state is achieved, for example, by means of a releasable mechanical connection, such as a clamp. The releasable mechanical connection includes a connecting element, such as a carrier temporarily bonded to the substrate or at least one clamp 112 (in Fig. (3A shown). Alternatively or additionally, the clamp can be configured as follows: a first plate and a second plate, wherein the first plate and the second plate are designed to be connected together, for example by screwing them together. The first plate can be solid. The second plate has a single large-area recess on the side onto which the OLED is processed. Alternatively, the second plate has multiple recesses on the side onto which the OLED is processed, through which the OLED(s) can be processed onto the substrate. Alternatively or additionally, in the second configuration, fixation is achieved by means of at least one property of the shape memory material. The property of the shape memory material is material-specific, i.e., shape memory material-dependent.The shape memory material's property is, for example, the structure of the at least one polymer after deformation into the second state. Alternatively or additionally, the shape memory material's property is the cross-linking of the at least one polymer retained after deformation into the second state. This shape memory property stabilizes the temporary shape of the material at temperatures ranging from approximately -10 °C to approximately 100 °C.

[0084] Forming the substrate into a planar shape results in a stable or stabilized substrate with a flat surface. The at least one optoelectronic component 104 can be formed on the planar surface of the substrate in a simple, stable, and practical manner.

[0085] This also enables the formation or fixing of the at least one optoelectronic component 104 on the substrate 102 without damaging the optoelectronic component 104 or its active surface by means of pressure, i.e. a mechanical load on the optoelectronic component 104.

[0086] Fig. Figure 1C illustrates a preliminary stage of the optoelectronic device 101 in the method for manufacturing the optoelectronic device 101 according to various embodiments. The optoelectronic device can correspond to any of the optoelectronic devices described above. The substrate and the shape memory material can, for example, be configured according to any of the embodiments described above.

[0087] As in Fig. As illustrated in Figure 1C, at least one optoelectronic component 104 is formed on the planar or substantially planar substrate 102, for example, several optoelectronic components. The at least one optoelectronic component is described in more detail below (see, for example, Figure 1C). Fig. 2).

[0088] The formation of the at least one optoelectronic device 104 on the planar substrate allows pressure, i.e., a mechanical load, to be applied to the optoelectronic device 104, for example, to the active surface of the optoelectronic device 104 or its encapsulation layer. This reduces or prevents the defects that previously occurred during the formation of the at least one optoelectronic device 104.

[0089] In various embodiments, the formation 160 of at least one optoelectronic component 104 on the substrate 102 involves lamination of the at least one optoelectronic component 104 onto the substrate 102. For example, the optoelectronic component 104 is fixed to the substrate 102 by means of heat, pressure, welding, and / or bonding. The optoelectronic component is, for example, a fully formed optoelectronic component, for example, encapsulated, or an optoelectronic component formed without an encapsulation layer.

[0090] Alternatively or additionally, the optoelectronic component 104 can be formed directly on the substrate 102, for example by being deposited layer by layer in physical contact with the substrate 102. Alternatively, the optoelectronic component 104 can be formed, for example, on top of the substrate 102. In other words:

[0091] Alternatively or additionally, the formation of at least one optoelectronic device 104 on the substrate 102 comprises at least the formation of the first electrode on the substrate 102, the formation of the organic functional layer stack on the first electrode, and the formation of the second electrode on the organic functional layer stack. In other words, the optoelectronic device 104 is formed or deposited stepwise or sequentially on the substrate 102. Alternatively or additionally, the formation of at least one optoelectronic device 104 on the substrate 102 comprises the deposition of a conductive layer on the substrate 102, which contains the first electrode of the optoelectronic device. This enables a more cost-effective formation of multiple optoelectronic devices that share a common substrate.

[0092] In various embodiments, the method 100 for manufacturing the optoelectronic device 101, after forming 160 the at least one optoelectronic component 104 on the substrate 102, further comprises forming 170 an encapsulation layer. For example, the formation 170 of the encapsulation layer and the forming 180 of the substrate 102 in the third state occur simultaneously. This enables a stabilized forming of the optoelectronic device and improved, supported encapsulation.

[0093] Fig. Figure 1D illustrates the optoelectronic device 101 in the method for manufacturing the optoelectronic device 101 according to various embodiments. The optoelectronic device can correspond to any of the optoelectronic devices described above. The substrate, the shape memory material, and the at least one optoelectronic component can, for example, be configured according to any of the embodiments described above.

[0094] As in Fig. As illustrated in Figure 1D, the optoelectronic device 101 has a non-planar shape. The optoelectronic device 101 comprises the substrate 102 and at least one optoelectronic component 104 formed on the substrate 102. For example, several optoelectronic components 104 can be formed on a common substrate 102.

[0095] The optoelectronic device can be designed, for example, to be flexible. Alternatively, the optoelectronic device can be designed, for example, to be rigid or inflexible. Furthermore, the optoelectronic device can be designed, for example, to be transparent. Alternatively, the optoelectronic device can be designed, for example, to be translucent or opaque.

[0096] The unplanar shape of the third state is the shape that is the same as, or substantially the same as, the shape that the substrate 102 has in the first state. In other words, the substrate is transformed into the third state such that it has the same or substantially the same shape as in the first state.

[0097] In various embodiments, the forming process 180 of the substrate 102 from the second state to the third state involves releasing the releasable mechanical connection, for example, relieving the mechanical stress or clamping. For example, releasing the releasable mechanical connection involves removing the at least one clamp 112 from the substrate 102.

[0098] Alternatively or additionally, the transformation 180 of substrate 102 from the second state to the third state involves a further phase transition of the shape memory material. This phase transition can be the opposite phase transition of the shape memory material of substrate 102 to the phase transition that transforms substrate 102 from the first state to the second state. The phase transition can be triggered, for example, by a stimulus. The stimulus could be, for instance, a change in the value of a physical parameter or quantity, such as temperature, the wavelength of UV light, the strength of the magnetic field, or mechanical stress, above a defined threshold that triggers the phase transition.

[0099] This causes the substrate containing shape-memory material to reshape from a temporary form to a form that is the same as, or substantially the same as, the permanent form. This allows the substrate or optoelectronic device to be reshaped from a planar or substantially planar form to a non-planar form. The non-planar form has a kink or curvature. For example, the non-planar form is a convexly curved shape. This makes it possible to obtain an optoelectronic device that reproduces a 3D or 2.5D appearance.

[0100] This also enables the transformation of the optoelectronic device or the substrate of the optoelectronic device into an unplanar or convex curved shape without requiring an external force, for example pressure, i.e. a mechanical load, on the active surface of the at least one optoelectronic component.

[0101] Fig. Figure 2 illustrates a schematic cross-sectional view of an optoelectronic component according to various embodiments. The optoelectronic component 1 can essentially be compared to the optoelectronic component 104 according to the embodiments shown in Figure 2. Fig. 1. Examples of implementation shown.

[0102] The optoelectronic component 1 is, for example, designed to be mechanically flexible or mechanically rigid. The optoelectronic component 1 can be transparent, translucent, or opaque.

[0103] The optoelectronic component 1 has a support 12. The support 12 can be translucent or transparent. The support 12 serves as a substrate for electronic elements or layers, for example, light-emitting elements. The support 12 can, for example, be made of or consist of plastic, metal, glass, quartz, and / or a semiconductor material. Furthermore, the support 12 can be made of or consist of a plastic film or a laminate with one or more plastic films. The support 12 can be mechanically rigid or mechanically flexible. The support 12 can be bonded to the substrate 102 according to the specifications in Fig. 1. Alternatively, the support 12 can be mounted on the substrate 102 according to the embodiments shown in 1. Fig. 1. Examples of implementation shown.

[0104] An optoelectronic layer structure is formed on the support 12. The optoelectronic layer structure has a first electrode layer 14, which includes a first contact section 16, a second contact section 18, and a first electrode 20. The support 12 with the first electrode layer 14 can also be referred to as the substrate. A first barrier layer (not shown), for example, a first barrier thin film, can be formed between the support 12 and the first electrode layer 14.

[0105] The carrier 12 can correspond to the described substrate 102 in various embodiments. Alternatively, the carrier 12 can be fixed to the substrate 102, for example by gluing it on.

[0106] The first electrode 20 is electrically isolated from the first contact section 16 by means of an electrical insulation barrier 21. The second contact section 18 is electrically coupled to the first electrode 20 of the optoelectronic layer structure. The first electrode 20 can be configured as an anode or as a cathode. The first electrode 20 can be translucent or transparent. The first electrode 20 comprises an electrically conductive material, for example, a metal and / or a transparent conductive oxide (TCO), or a stack of multiple layers comprising metals or TCOs. The first electrode 20 can, for example, comprise a stack of layers combining a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.The first electrode 20 can alternatively or additionally comprise: networks of metallic nanowires and particles, for example made of Ag, networks of carbon nanotubes, graphene particles and layers and / or networks of semiconducting nanowires.

[0107] Above the first electrode 20, an optically functional layer structure, for example an organic functional layer structure 22, of the optoelectronic layer structure is formed. The organic functional layer structure 22 can, for example, have one, two, or more sublayers. For example, the organic functional layer structure 22 can have a hole injection layer, a hole transport layer, an emitter layer, an electron transport layer, and / or an electron injection layer. The hole injection layer serves to reduce the band gap between the first electrode and the hole transport layer. In the hole transport layer, the hole conductivity is greater than the electron conductivity. The hole transport layer serves to transport the holes. In the electron transport layer, the electron conductivity is greater than the hole conductivity. The electron transport layer serves to transport the electrons.The electron injection layer serves to reduce the band gap between the second electrode and the electron transport layer. Furthermore, the organic functional layer structure 22 can comprise one, two, or more functional layer structure units, each of which includes the aforementioned sublayers and / or further intermediate layers.

[0108] A second electrode 23 of the optoelectronic layer structure is formed above the organic functional layer structure 22 and is electrically coupled to the first contact section 16. The second electrode 23 can be configured according to one of the embodiments of the first electrode 20, whereby the first electrode 20 and the second electrode 23 can be identical or different. The first electrode 20 serves, for example, as the anode or cathode of the optoelectronic layer structure. Correspondingly to the first electrode, the second electrode 23 serves as the cathode or anode of the optoelectronic layer structure.

[0109] The optoelectronic layer structure is an electrically and / or optically active region. The active region is, for example, the area of ​​the optoelectronic device 10 in which electric current flows to operate the optoelectronic device 10 and / or in which electromagnetic radiation is generated or absorbed. A getter structure (not shown) can be arranged on or above the active region. The getter layer can be translucent, transparent, or opaque. The getter layer can comprise or be formed from a material that absorbs and binds substances that are harmful to the active region.

[0110] An encapsulation layer 24 of the optoelectronic layer structure is formed over the second electrode 23 and partially over the first contact section 16 and partially over the second contact section 18. This encapsulation layer 24 encapsulates the optoelectronic layer structure. The encapsulation layer 24 can be configured as a second barrier layer, for example, as a second barrier thin film. The encapsulation layer 24 can also be referred to as thin-film encapsulation. The encapsulation layer 24 forms a barrier against chemical impurities and atmospheric substances, particularly water (moisture) and oxygen. The encapsulation layer 24 can be configured as a single layer, a stack of layers, or a layered structure.The encapsulation layer 24 can comprise or be formed from: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, poly(p-phenylene terephthalamide), nylon 66, as well as mixtures and alloys thereof. Optionally, the first barrier layer on the support 12 can be configured corresponding to an embodiment of the encapsulation layer 24.

[0111] In the encapsulation layer 24, a first recess is formed above the first contact section 16, and a second recess is formed above the second contact section 18. A first contact area 32 is exposed in the first recess, and a second contact area 34 is exposed in the second recess. The first contact area 32 serves to electrically contact the first contact section 16, and the second contact area 34 serves to electrically contact the second contact section 18.

[0112] In various embodiments, the encapsulation layer is formed after the formation or application of the at least one optoelectronic component on or over the second electrode of the at least one optoelectronic component.

[0113] The formation of the encapsulation layer between the formation of the at least one optoelectronic component on the substrate and the transformation of the substrate into the third state can result in a stabilized transformation of the substrate into the third state. This reduces or prevents delamination of the at least one optoelectronic component from the substrate.

[0114] An adhesive layer 36 is formed above the encapsulation layer 24. The adhesive layer 36 comprises, for example, an adhesive, such as a laminating adhesive, a lacquer, and / or a resin. The adhesive layer 36 may, for example, contain particles that scatter electromagnetic radiation, such as light-scattering particles.

[0115] A cover body 38 is formed above the adhesive layer 36. The adhesive layer 36 serves to attach the cover body 38 to the encapsulation layer 24. The cover body 38 comprises, for example, plastic, glass, and / or metal. For example, the cover body 38 can be made primarily of glass and have a thin metal layer, such as a metal foil, and / or a graphite layer, such as a graphite laminate, on the glass body. The cover body 38 serves to protect the conventional optoelectronic device 1, for example, from external mechanical forces. Furthermore, the cover body 38 can serve to distribute and / or dissipate heat generated in the conventional optoelectronic device 1.For example, the glass of the cover body 38 can serve as protection against external influences and the metal layer of the cover body 38 can serve to distribute and / or dissipate the heat generated during the operation of the conventional optoelectronic component 1.

[0116] The cover body 38 can correspond to the described substrate 102 in various embodiments. Alternatively, the cover body 38 can be fixed to the substrate 102, for example by gluing it on.

[0117] Fig. Figure 3 illustrates a schematic sectional view of a method for manufacturing an optoelectronic device 301 according to various embodiments.

[0118] Fig. Figure 3A shows a preliminary stage of the optoelectronic device 301 in the method for manufacturing the optoelectronic device 301 according to various embodiments. The optoelectronic device can correspond to one of the optoelectronic devices described above. The substrate, the shape memory material, and the at least one optoelectronic component can, for example, be configured according to one of the embodiments described in Figure 3A. Fig. 1A to Fig. 1D and Fig. The two described embodiments must be designed as shown.

[0119] As in Fig. As illustrated in Figure 3a, the substrate 108 and the at least one optoelectronic component 104 formed on it are stabilized by means of two clamps 112 at the outermost edge region on the planar or substantially planar substrate with the at least one optoelectronic component.

[0120] The substrate 108 is held or stabilized in a planar or substantially planar shape, for example, by means of at least one clamp 112, or for example, two clamps, before the formation of the at least one optoelectronic component 104. In this case, after the formation of the at least one optoelectronic component 104, the edge region of the substrate 108 covered by the clamps 112 remains free of optoelectronic components (not shown). This enables the substrate 108 to be stabilized in a planar or substantially planar shape by mechanical clamping. Alternatively or additionally, the substrate 108 with the at least one optoelectronic component formed on it is provided by the at least one clamp 112, or for example, two clamps, in the outermost edge region of the substrate 108 with the at least one optoelectronic component formed on it (in Fig. (3A shown). This enables stabilization of the edge region of the substrate 108 with the at least one optoelectronic component formed on it during the forming of the substrate 108 into the third state or into a non-planar, for example convexly curved, shape. This means that the forming can be carried out without delamination or with reduced delamination of the at least one optoelectronic component from the substrate.

[0121] Substrate 108, for example, is an elastic substrate, a pseudoelastic substrate, a viscoelastic substrate and / or a thermoelastic substrate.

[0122] In various embodiments, the substrate 108 is free of shape memory material. Alternatively, the substrate 108 has a shape memory material or is formed from one. Alternatively or additionally, the substrate 108 has a shape memory material that is arranged in the outermost edge region of the substrate.

[0123] In various embodiments, the at least one terminal 112 is free of shape memory material. Alternatively, the at least one terminal 112 has a shape memory material or is formed from one.

[0124] Fig. Figure 3B illustrates the optoelectronic device 301 in the method for manufacturing the optoelectronic device 301 according to various embodiments. The optoelectronic device can correspond to any of the optoelectronic devices described above. The substrate, the shape memory material, and the at least one optoelectronic component can, for example, be configured according to any of the embodiments described above.

[0125] As in Fig. As illustrated in Figure 3B, the optoelectronic device 301 comprises the substrate 108, which contains at least one optoelectronic component 104, for example, several optoelectronic components. Furthermore, a terminal 112 is illustrated in the detailed view. The terminal 112 is arranged at the edge of the substrate. The optoelectronic device 301 has a non-planar, or convex, curved shape.

[0126] In various embodiments, the substrate 108 with shape memory material is transformed into the third state, for example, by removing the at least one clamp 112 from the substrate 108 and / or by applying a stimulus. Alternatively or additionally, the substrate 108 with shape memory material is transformed into the third state by removing the at least one clamp 112 from the substrate with the at least one optoelectronic component formed thereon and by applying a stimulus. Alternatively or additionally, the transformation 380 of the substrate 108 without shape memory material into the third state includes a transformation of the at least one clamp 112. Alternatively or additionally, the transformation 380 of the substrate 108 with shape memory material into the third state includes a stimulus-triggered transformation of the at least one clamp 112 and a stimulus-triggered transformation of the substrate 108.In this case, at least one terminal 112 has a shape memory material or is made of one. The stimulus is, for example, a change in the value of a physical parameter or quantity, such as temperature, the wavelength of UV light, the strength of the magnetic field, or mechanical stress, above a specifically defined value that triggers the phase transition or phase conversion.

[0127] The at least one clamp with shape memory material enables the support or stabilization of the edge region of the optoelectronic device during the forming of the substrate into the third state. This reduces or minimizes delamination of the at least one optoelectronic component from the substrate during the forming of the substrate into the third state.

[0128] In one embodiment, the method for manufacturing an optoelectronic device comprises: - providing a substrate with shape memory material, wherein the shape memory material is characterized by a durable shape that is unplanar, - a transformation of the substrate into a planar or essentially planar shape by means of flattening the substrate, - the application of at least one optoelectronic component to the planar or substantially planar substrate, and - a transformation of the substrate by means of a stimulus into a shape that is the same as or substantially the same as the permanent shape of the shape memory material.

[0129] In one embodiment, the method for manufacturing an optoelectronic device comprises: - providing a substrate with shape memory material, wherein the shape memory material is characterized by a durable shape that is unplanar, - a transformation of the substrate into a planar or substantially planar shape by means of a clamping, for example by means of a detachable mechanical connection, wherein the detachable mechanical connection has at least one clamp, - the application of at least one optoelectronic component to the planar or substantially planar substrate, and - a reshaping of the substrate by means of stimulus and release of the clamping into a shape that is the same or substantially the same as the permanent shape of the molding material.

[0130] In one embodiment, the method for manufacturing an optoelectronic device comprises: - providing a substrate with shape memory material, wherein the shape memory material is characterized by a durable shape that is unplanar, - a transformation of the unplanar substrate into a planar or essentially planar form by means of flattening, - the application of at least one optoelectronic component to the planar or substantially planar substrate, - the application of at least one elastic clamp, for example two clamps at the edge of the optoelectronic substrate with the at least one optoelectronic component, - a reshaping of the substrate of the optoelectronic device by means of a stimulus into a shape that is the same as or substantially the same as the permanent shape of the shape memory material, and - removing at least one clamp.

[0131] In one embodiment, the method for manufacturing an optoelectronic device comprises: - providing a substrate with shape memory material, wherein the shape memory material is characterized by a durable shape that is unplanar, - a transformation of the unplanar substrate into a planar or essentially planar form by means of flattening. - the application of at least one optoelectronic component to the planar or substantially planar substrate, - the application of at least one clamp, for example two clamps, at the edge of the optoelectronic device, wherein the at least one clamp has a different shape memory material, - a reshaping of the substrate of the optoelectronic device by means of a stimulus into a shape that is the same as or substantially the same as the permanent shape of the molding material and a simultaneous reshaping of the at least one clamp by means of a stimulus, and - removing at least one clamp.

[0132] In one embodiment, the method for manufacturing an optoelectronic device comprises: - providing an elastic substrate that has an initial unplanar shape, - a transformation of the unplanar substrate into a planar or substantially planar shape by means of at least one clamp, wherein the at least one clamp comprises a shape memory material which is shaped such that the at least one clamp, by means of a stimulus, transforms the optoelectronic device such that the optoelectronic device has an unplanar shape, - the application of at least one optoelectronic component to the planar or substantially planar substrate, and - a reshaping of the at least one clamp by means of a stimulus such that the optoelectronic device has a second unplanar shape which is the same or substantially the same as the first unplanar shape.

[0133] Fig. Figure 4 shows a schematic sectional view of a method for manufacturing an optoelectronic device according to various embodiments.

[0134] Method 400 for manufacturing the optoelectronic device 401 comprises providing 420 a first substrate 102 and a second substrate 106. The first substrate 102 and the second substrate 106 each have a non-planar shape. The non-planar shape of the first substrate 102 is the same as, or substantially the same as, the non-planar shape of the second substrate 106. In providing 420 the first substrate 102 and the second substrate 106, the first substrate 102 and the second substrate 106 are each formed in the non-planar shape or brought into the non-planar shape, for example by means of a molding process.

[0135] Method 400 further comprises a forming 440 of the first substrate 102 and the second substrate 106, each into a planar or substantially planar shape. The forming 440 of the first substrate 102 and the second substrate 106 from the first state to the second state includes, for example, mechanical forming. For example, the mechanical forming includes drawing and / or rolling. The drawing can be drawing the sides located at the outermost edge region of the first substrate 102 and the second substrate 106. The rolling is, for example, flattening.

[0136] Method 400 further comprises forming 460 at least one optoelectronic device 104 on the first substrate 102 having a planar or substantially planar shape, or on the second substrate 106 having a planar or substantially planar shape. The at least one optoelectronic device is formed on a planar or planarized surface of the first or second substrate, respectively. The at least one optoelectronic device 104 is sandwiched between the first substrate 102 and the second substrate 106.

[0137] The method further comprises forming 480 of the first substrate 102, which has a planar or substantially planar shape, into a non-planar shape, and forming 480 of the second substrate 106, which has a planar or substantially planar shape, into a non-planar shape. The non-planar shape of the first substrate is the same as, or substantially the same as, the non-planar shape of the second substrate. The non-planar shape of the first substrate and the non-planar shape of the second substrate in the finished device may be the same as, or substantially the same as, the non-planar shape of the first substrate and the second substrate when they are provided 420.

[0138] This enables the optoelectronic device 104 to form on a flat or planar surface of the first or second substrate. This allows the optoelectronic device 104 to form 460 without any or substantially no mechanical pressure, i.e., mechanical stress, being exerted on the optoelectronic device, for example, on the active area of ​​the optoelectronic device or its encapsulation layer. This reduces or prevents the occurrence of damage or defects in the at least one optoelectronic device during its formation on the substrate.

[0139] Furthermore, the arrangement of the at least one optoelectronic component 104 between the first substrate 102 and the second substrate 106 enables an optoelectronic device whose neutral fiber lies in or in the region of the optoelectronic component. As a result, the at least one optoelectronic component is free from deformation, compression, or stretching during the forming 380 of the first substrate 102 and the second substrate 106 into a non-planar shape. In other words, the method 401 for manufacturing the optoelectronic device 401 with two substrates enables the production of the optoelectronic device 401, which has a 3D or 2.5D appearance that is free from changes to the appearance of the optoelectronic device when it is flat.

[0140] Fig. Figure 4A shows a preliminary stage of the optoelectronic device 401 in the method for manufacturing the optoelectronic device 401 according to various embodiments. The optoelectronic device can correspond to one of the optoelectronic devices described above. The first substrate 102, the second substrate 106, and the shape memory material can, for example, correspond to one described in the Fig. 1A to 1D, Fig. 2, Fig. 3A, Fig. The substrate described in 3B must be formed.

[0141] The provision of 420 of the first substrate 102 and the second substrate 106 can be carried out according to one of the Fig. The embodiments described in 1A for providing substrate 102 are carried out.

[0142] As in Fig. As illustrated in Figure 4A, the first substrate 102 and the second substrate 106 have a non-planar shape. The non-planar shape exhibits, for example, a kink or a curve. For instance, the non-planar shape is a convexly curved shape. The non-planar shape of the first substrate 102 may be the same as, or substantially the same as, the non-planar shape of the second substrate 106.

[0143] In various embodiments, the first substrate 102 and the second substrate 106 comprise a shape memory material, wherein the shape memory material is, for example, designed according to a description in the Fig. 1A to 1D, Fig. 2, Fig. 3A, Fig. It can be designed as described in 3B.

[0144] In various embodiments, providing the first substrate 102 and the second substrate 106 involves forming the first substrate 102 and the second substrate 106 into a non-planar shape by means of shape-imprinting the shape-memory material provided in the first substrate 102 and the second substrate 106, respectively. In other words, the first substrate 102 and the second substrate 106 are embossed into a non-planar shape. This non-planar shape represents the permanent shape of the shape-memory material of the respective first and second substrates.

[0145] Fig. Figure 4B shows a preliminary stage of the optoelectronic device 401 in the method for manufacturing the optoelectronic device 401 according to various embodiments. The optoelectronic device can correspond to one of the optoelectronic devices described above. The first substrate 102, the second substrate 106, and the shape memory material can, for example, correspond to one described in the Fig. 1A to 1D, Fig. 2, Fig. 3A, Fig. 3B and Fig. 4A described embodiments.

[0146] The transformation 440 of the first substrate 102 and the second substrate 106 into a planar form can be carried out according to one of the methods described in the Fig. The embodiments described in 1B for transforming the substrate 102 from the first state to the second state are carried out.

[0147] As in Fig. As illustrated in Figure 4B, the first substrate 102 and the second substrate 106 have a planar or essentially planar shape. The planar or essentially planar shape of the first substrate 102 and the second substrate 106 represents the temporary form of the shape memory material of the respective first and second substrates. The temporary form is obtained by transforming the first substrate 102 and the second substrate 106 from their unplanar form to their planar or essentially planar form. The temporary form is reversible to the permanent form of the shape memory material of the respective first and second substrates.

[0148] Fig. Figure 4C shows a preliminary stage of the optoelectronic device 401 in the method for manufacturing the optoelectronic device 401 according to various embodiments. The optoelectronic device can correspond to one of the optoelectronic devices described above. The first substrate 102, the second substrate 106, and the shape memory material can, for example, correspond to one described in the Fig. 1A to 1D, Fig. 2, Fig. 3A, Fig. 3B and Fig. 4A, Fig. The embodiments described in 4B must be designed as shown.

[0149] The formation of at least one optoelectronic component 104 can be carried out according to one of the methods described in the Fig. 1C and Fig. The embodiments described in 3A for forming at least one optoelectronic component 104 on the substrate 102 are carried out.

[0150] As in Fig. As illustrated in Figure 4C, at least one optoelectronic component 104, for example several optoelectronic components, is formed on the first substrate 102 or on the second substrate 106 and arranged in a sandwich-like manner between the first substrate 102 and the second substrate 106.

[0151] This ensures that the at least one optoelectronic component 104 is formed or applied to the first substrate 102 or to the second substrate 106 without any pressure being exerted on the optoelectronic component 104 or on its active surface that could damage it. This allows the defects previously caused by pressure on the optoelectronic component 104 or its active surface during its formation on the substrate to occur during the formation of the at least one optoelectronic component 104.

[0152] The formation of the at least one optoelectronic device 104 comprises, for example, the formation or application of at least one fully formed optoelectronic device onto the first substrate 102 and / or onto the second substrate 16, which may or may not have an encapsulation layer. The formation of the at least one optoelectronic device 104 can be carried out by lamination. Alternatively or additionally, the optoelectronic device 104 is formed, for example, such that it is in physical contact with the first substrate 102 and / or with the second substrate 106. Alternatively or additionally, the formation of the at least one optoelectronic device 104 comprises the deposition of a conductive layer onto the first substrate 102 and / or onto the second substrate 106. The conductive layer may include or form one of the electrodes of the optoelectronic device.Alternatively or additionally, the formation of the at least one optoelectronic device 104 includes at least forming the first electrode on the first substrate 102 or on the second substrate, forming the organic functional layer stack on the first electrode and forming the second electrode on the organic functional layer stack and applying the second substrate 106 or the first substrate 102 to the organic functional layer stack.

[0153] The second substrate 106 is, for example, metallurgically bonded to the at least one optoelectronic component. This metallurgical bond is achieved, for example, by means of an adhesive. This allows the at least one optoelectronic component to be subjected to less stress during the forming of the first substrate 102 and the second substrate 106.

[0154] In various embodiments, the encapsulation layer can be force-fitted to the second substrate 106. This supports the encapsulation effect of the encapsulation layer and stabilizes the transformation of the first and second substrates into the third state.

[0155] Fig. Figure 4D illustrates the optoelectronic device 401 in the method for manufacturing the optoelectronic device 401 according to various embodiments. The optoelectronic device can correspond to any of the optoelectronic devices described above. The first substrate 102, the second substrate 106, and the shape memory material can, for example, correspond to one described in the Fig. 1A to 1D, Fig. 2, Fig. 3A, Fig. 3B and Fig. The embodiments described in 4A to 4C must be designed as shown in the examples below.

[0156] The transformation 480 of the first substrate 102 and the second substrate 104 into the unplanar form can be carried out according to one of the methods described in the Fig. 1D and Fig. The embodiments described in 3B for transforming the substrate 102 into the third state are carried out.

[0157] As in Fig.As illustrated in Figure 4D, the optoelectronic device 401 comprises the first substrate 102 having a first non-planar shape, the second substrate 106 having a second non-planar shape, and at least one optoelectronic component 104, for example, several optoelectronic components 104. The at least one optoelectronic component 104 is sandwiched between the first substrate 102 and the second substrate 106. The non-planar shape of the first substrate 102 is the same as, or substantially the same as, the non-planar shape of the second substrate 106. The first substrate 102 is coplanar with the second substrate 106. The first substrate 102 has a first shape-memory material. The second substrate 102 has a second shape-memory material. The first shape-memory material can be the same as, or different from, the second shape-memory material.

[0158] This ensures that when the first substrate 102 and the second substrate 104 are transformed into their unplanar form, the at least one optoelectronic component 106 has neutral fibers or is formed from them. This allows the optoelectronic device produced by this method to be free from compression or stretching.

[0159] According to a first embodiment, a method for manufacturing an optoelectronic device may comprise the following steps in sequence: - Providing a substrate that has a first state which has a non-planar shape, - Transformation of the substrate into a second state, wherein the second state has a planar or substantially planar shape, - Formation of at least one optoelectronic component on the substrate, - Transforming the substrate into a third state, - where the third state is the same or essentially the same as the first state.

[0160] According to a second embodiment, the method according to the first embodiment can be designed such that the unplanar shape has at least one curvature or kink.

[0161] According to a third embodiment, the method according to the first or second embodiment can be designed such that the substrate has a shape memory material.

[0162] According to a fourth embodiment, the method according to the third embodiment can be designed such that the shape memory material comprises a metallic alloy or at least a polymer.

[0163] According to a fifth embodiment, the method according to the third to fourth embodiments can be designed such that the reshaping of the substrate from the first state to the second state involves a phase transition of the shape memory material.

[0164] According to a sixth embodiment, the method according to the first to fifth embodiments can be designed such that when the substrate is provided, the substrate is unplanar, or the substrate is planar and is brought into the unplanar shape, preferably by means of a molding process.

[0165] According to a seventh embodiment, the method according to the first to sixth embodiments can be designed such that the forming of the substrate from the first state to the second state involves mechanical forming.

[0166] According to an eighth embodiment, the method according to the first to sixth embodiments can be designed such that the forming of the substrate from the first state to the second state includes a fixation in the second state by means of a releasable mechanical connection, preferably a clamping, and / or by means of at least one property of the shape memory material.

[0167] According to a ninth embodiment, the method according to the eighth embodiment can be designed such that the releasable mechanical connection has at least one clamp, wherein the at least one clamp has a shape memory material.

[0168] According to a tenth embodiment, the method according to the first to ninth embodiments can be designed such that the formation of at least one optoelectronic component on the substrate includes a lamination of the at least one optoelectronic component on the substrate; and / or includes at least a formation of a first electrode on the substrate, a formation of an organically functional layer stack on the first electrode, and a formation of a second electrode on the organically functional layer stack.

[0169] According to an eleventh embodiment, the method according to the eighth to tenth embodiments can be designed such that the transformation of the substrate from the second state to the third state involves a release of the releasable mechanical connection and / or a further phase transition of the shape memory material, preferably by means of a stimulus.

[0170] According to a twelfth embodiment, the method according to the ninth to tenth embodiments can be designed such that the forming of the substrate from the second state to the third state is carried out by forming the at least one clamp with shape memory material, preferably by means of a stimulus.

[0171] According to a thirteenth embodiment, the method according to the first to twelfth embodiments can be designed such that, after forming the at least one optoelectronic component on the substrate, it further includes forming an encapsulation layer, wherein the formation of the encapsulation layer and the transformation of the substrate in the third state take place simultaneously.

[0172] According to a fourteenth embodiment, the method for manufacturing an optoelectronic device may comprise the following steps: - Providing a first substrate and a second substrate, wherein the first substrate and the second substrate are each formed in a non-planar shape or brought into a non-planar shape, preferably by means of a molding process, - Transforming the first substrate and the second substrate each into a planar or substantially planar form, - Forming at least one optoelectronic device on the first substrate with a planar shape or with a substantially planar shape, or on the second substrate with a planar shape or with a substantially planar shape, wherein the at least one optoelectronic device is formed in a sandwich-like manner between the first substrate and the second substrate, - Transforming the first substrate with the planar shape or with the essentially planar shape and the second substrate with the planar shape or with the essentially planar shape into a non-planar shape.

[0173] According to a fifteenth embodiment, the optoelectronic device can comprise a first substrate with a first unplanar shape, wherein the first substrate comprises a first shape memory material, a second substrate with a second unplanar shape, wherein the second substrate comprises a second shape memory material, and at least one optoelectronic component sandwiched between the first substrate and the second substrate, wherein the second unplanar shape is the same or substantially the same as the first unplanar shape and the first substrate is coplanar or substantially coplanar with the second substrate.

[0174] The invention is not limited to the specified embodiments. For example, several different optoelectronic components arranged side by side or one above the other can be used in the form of a display. For example, the method for manufacturing the optoelectronic device can include further steps that enable the production of a 3D-shaped optoelectronic device with non-elastic bodies, for example, the production of an optoelectronic device with a cylindrical body made of shape-memory material with rings of different sizes, which allow the "unfolding" into the cylindrical shape only to the ring size used, for example, in the outer layer. REFERENCE MARK LIST 100, 400 procedures 120, 140, 160, 180, 360, 380, 420, 440, 460, 480 process steps 101, 301, 401 optoelectronic device 12, 102, 106, 108 Substrat 1,104 optoelectronic component 112 Terminal 12 carriers 14 Electrode layer 16, 18 Contact section 20, 23 electrode 21 electrical insulation barrier 22-layer structure 24 Encapsulation layer 32 Contact area 36 Adhesive layer 38 cover bodies

Claims

[1] Method (100) for manufacturing an optoelectronic device (101, 301, 401), comprising the method in the sequence: - Providing (120) a substrate (102) having a first state which has a non-planar shape, - Transformation (140) of the substrate (102) into a second state by fixing the substrate (102) in the second state by means of a releasable mechanical connection having at least one clamp (112), wherein the at least one clamp (112) has a shape memory material, wherein the second state has a planar or substantially planar shape, - Forming (160) at least one optoelectronic component (104) on the substrate (102), - Transformation (180) of the substrate (102) into a third state, - where the third state is the same or essentially the same as the first state. [2] Method according to claim 1, wherein the unplanar shape has at least one curvature or kink. [3] Method according to claim 1 or 2, wherein the substrate (102) comprises a shape memory material. [4] Method according to claim 3, wherein the shape memory material comprises a metallic alloy or at least a polymer. [5] Method according to one of claims 3 to 4, wherein the forming (140) of the substrate (102) from the first state to the second state includes a phase transition of the shape memory material. [6] Method according to any one of claims 1 to 5, wherein when providing (120) the substrate (102) the substrate (102) is formed in an unplanar shape, or the substrate (102) is formed in a planar shape and is brought into the unplanar shape, preferably by means of a molding process. [7] Method according to any one of claims 1 to 6, wherein the formation (160) of at least one optoelectronic device (104) on the substrate (102) comprises a lamination of the at least one optoelectronic device (104) on the substrate (102); and / or at least one formation of a first electrode on the substrate, one formation of an organically functional layer stack on the first electrode and one formation of a second electrode on the organically functional layer stack. [8] Method according to any one of claims 1 to 7, wherein the forming (180) of the substrate (102) from the second state to the third state comprises a release of the releasable mechanical connection and / or a further phase transition of the shape memory material, preferably by means of a stimulus. [9] Method according to any one of claims 1 to 7, wherein the forming (180) of the substrate from the second state to the third state comprises a forming of the at least one clamp (112) with shape memory material, preferably by means of a stimulus. [10] Method according to any one of claims 1 to 9, further comprising forming (160) the at least one optoelectronic component (104) on the substrate (102): a formation (170) of an encapsulation layer, wherein the formation of the encapsulation layer and the transformation (180) of the substrate (102) into the third state occur simultaneously.

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