A METHOD FOR PROVIDING A PLANIZABLE WORKPIECE CARRIER, A WORKPIECE PLANIZING ARRANGEMENT AND A CHUCK

Abstract

Workpiece planarization arrangement (100), comprising: a chuck (102) comprising a support support (102c) and a workpiece carrier (102s), wherein the workpiece carrier (102s) has at least one for carrying a or a section (102p) configured for several workpieces (106), wherein the at least one section (102p) has a support surface (122s) configured to provide physical contact with the one or more workpieces (106); and a planarization tool (104) configured to planarize the support surface (122s) of at least one section (102p) of the chuck (102) and one or to planarize several workpieces (106) on at least one section (102p) of the chuck (102); wherein at least one section (102p) of the chuck (102) comprises at least one of particles, pores and / or a polymer, where the mechanical hardness of at least one section (102p) is less than the mechanical hardness of the support carrier (102c).

Description

Field of expertise

[0001] Various embodiments generally relate to a method for providing a planarizable workpiece carrier, a workpiece planarization assembly, and a chuck. background

[0002] In general, semiconductor materials can be processed in semiconductor technology on or in a substrate (also called a wafer or carrier), e.g., to produce integrated circuits (also called chips). During the processing of the semiconductor material, certain process steps can be performed, such as thinning the wafer, doping the semiconductor material, or forming one or more layers over the wafer.

[0003] Typically, the wafer is thinned to remove excess material from the backside of the integrated circuits until the integrated circuits reach a predefined thickness, which affects their electronic performance. For precise thinning of all integrated circuits to the same thickness, the integrated circuits may need to be aligned parallel to a thinning plane. To align the integrated circuits, the wafer can be integrated into a planarization package, which is planarized to provide two nearly plane-parallel surfaces, enabling precise thinning of all integrated circuits on the wafer.

[0004] To minimize deviation between the two nearly plane-parallel surfaces, the chuck on which the planarization housing is mounted during planarization can be adjusted to the plane in which the planarization housing is being planarized. During this process, the chuck can be aligned plane-parallel to the planarization plane through a self-planarization process.

[0005] Typically, the self-planarization process is limited in its precision due to inherent technological variations in the process itself. Therefore, the nearly plane-parallel surfaces of the planarization package may deviate from each other up to the highest precision of the self-planarization process. Minimizing variations in the resulting thickness of the integrated circuits (also referred to as total thickness variation) can thus be limited, e.g., in the case of a 300 mm diameter wafer, to more than approximately 2 µm. The total thickness variation may not be amenable to subsequent corrections and can be carried over to further processing steps. For example, stability of the total thickness variation for the finished chips can be limited to approximately ± 3 µm, e.g., measured across a plurality of processed wafers or a plurality of processed chips in a wafer.

[0006] US 2013 / 0 316 623 A1 describes a device for chemical-mechanical planarization comprising a spindle assembly and at least one substrate support that perform a linear lateral movement relative to each other, while grinding surfaces of a plurality of cylindrical spindles in the spindle assembly contact and rotate relative to at least one substrate mounted on the at least one substrate support. The direction of the linear lateral movement lies in the plane tangentially contacting the plurality of cylindrical spindles and can be orthogonal to the rotation axes of the plurality of cylindrical spindles.

[0007] US 2012 / 0 063 862 A1 describes a method for monitoring the condition of a consumable board on a CNC machine.

[0008] DE 10 2014 117 966 A1 describes a planarization process, for example to reduce surface roughness or to reduce variations in the depth profile of a carrier or a wafer surface containing structural elements with different heights. Summary

[0009] Workpiece planarization arrangements according to the invention, a chuck, a method for providing a planarizable workpiece carrier, and a method for planarizing one or more workpieces are specified in the independent patent claims. Additional features for advantageous embodiments are specified in the dependent patent claims. Short description of the drawings

[0010] In the drawings, like reference characters generally designate the same parts throughout the several views. The drawings are not necessarily to scale, with emphasis generally placed upon illustrating the principles of the invention. In the following description, various embodiments of the invention are described with reference to the following drawings, in which: Fig. 1 shows a workpiece planarization arrangement in a schematic top view according to various embodiments; Fig. 2 to 4 show a workpiece planarization arrangement in a schematic cross-sectional view or a side view according to various embodiments; Fig. 5 shows a chuck in a schematic cross-sectional view according to various embodiments; Fig. 6A and Fig. 6B show a chuck and a workpiece carrier in a schematic view according to various embodiments; Fig. 7A and Fig. 7B show a chuck and a workpiece carrier in a schematic view according to various embodiments; Fig. 8A shows a workpiece carrier in a schematic cross-sectional view according to various embodiments; Fig. 8B and Fig. 9 show a chuck in a schematic cross-sectional view according to various embodiments; Fig. 10A shows an interchangeable workpiece carrier in a schematic cross-sectional view and Fig. 10B shows the interchangeable workpiece carrier in a corresponding plan view according to various embodiments; Fig. 11 and Fig. 12 show a method in a schematic flow diagram according to various embodiments; Fig. 13A and Fig. 13B shows a workpiece planarization arrangement in a schematic cross-sectional view according to various embodiments; Fig. 14 to Fig. 16 show a method in a schematic flow diagram according to various embodiments; Fig. 17A and Fig. 17B show a chuck and a workpiece carrier in a schematic perspective view according to various embodiments; Fig. 18 shows a chuck in a schematic cross-sectional view or a side view according to various embodiments; Fig. 19 and Fig. 20 show a method in a schematic cross-sectional view and side view according to various embodiments; Fig. 21A and Fig. 21B show a workpiece carrier in a schematic perspective view according to various embodiments; and Fig. 22A and Fig. 22B show a workpiece planarization arrangement in various schematic views according to various embodiments. Description

[0011] The following detailed description refers to the accompanying drawings, which show specific details and embodiments in which the invention may be practiced.

[0012] The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any embodiments or configurations described herein as "exemplary" should not necessarily be construed as preferred or advantageous over other embodiments or configurations.

[0013] The word "over," used with reference to a material deposited "over" a side or surface, may be used herein to mean that the deposited material may be formed "directly on," e.g., in direct contact with, the specified side or surface. The word "over," used with reference to a material deposited "over" a side or surface, may be used herein to mean that the deposited material may be formed "indirectly on" the specified side or surface, with one or more additional layers disposed between the specified side or surface and the deposited material.

[0014] The term "lateral," used with reference to the "lateral" extent of a structure (or a substrate, wafer, or support beam), or "laterally" adjacent, may be used herein to refer to an extent or a positional relationship along a surface of a substrate, wafer, or support beam. This means that a surface of a substrate (e.g., a surface of a support beam or a surface of a wafer) may serve as a reference, which is commonly referred to as the main processing surface of the substrate (or the main processing surface of the support beam or wafer). Furthermore, the term "width," used with reference to a "width" of a structure (or a structural element), may be used herein to refer to the lateral extent of a structure.Furthermore, the term "height", used with reference to a height of a structure (or a structural element), may be used herein to refer to an extension of a structure along a direction that is perpendicular to the surface of a substrate (e.g., perpendicular to the main processing surface of a substrate). The term "thickness", used with reference to a "thickness" of a layer, may be used herein to refer to the spatial extension of the layer perpendicular to the surface of the carrier (the material) on which the layer is deposited. If the surface of the carrier is parallel to the surface of the substrate (e.g., the main processing surface), the "thickness" of the layer deposited on the carrier may be the same as the height of the layer. Furthermore, a "vertical" structure may be referred to as a structure that extends in a direction perpendicular to the lateral direction (e.g.,perpendicular to the main processing surface of a substrate), and a "vertical" extension may be referred to as an extension along a direction perpendicular to the lateral direction (e.g., an extension perpendicular to the main processing surface of a substrate).

[0015] According to various embodiments, at least one of a substrate (also referred to as a wafer) and a semiconductor region may comprise or be formed from a semiconductor material of various types, including, for example, a Group IV semiconductor (e.g., silicon or germanium), a compound semiconductor, e.g., a Group III-V compound semiconductor (e.g., gallium arsenide or gallium nitride), or other types, including Group III semiconductors, Group V semiconductors, Group IV-IV semiconductors (e.g., silicon carbide), or polymers. In one embodiment, at least one of the substrate and the semiconductor region is made of silicon (doped or undoped); in an alternative embodiment, at least one of the substrate and the semiconductor region is a silicon-on-insulator (SOI) wafer.As an alternative for at least one of the substrate and the semiconductor region, any other suitable semiconductor material may be used, for example a semiconductor compound material such as gallium phosphide (GaP), indium phosphide (InP), but also any suitable ternary semiconductor compound material or quaternary semiconductor compound material such as indium gallium arsenide (InGaAs).

[0016] According to various embodiments, at least one of the wafer and the semiconductor region may be further processed to form one or more semiconductor chips, at least one of which is in or above the semiconductor region or the corresponding wafer. A semiconductor chip may include an active chip area. The active chip area may be deposited in a semiconductor region of the wafer and may include one or more semiconductor circuit elements, such as a transistor, a resistor, a capacitor, a diode, or the like. The one or more semiconductor circuit elements may be configured to perform computing or storage operations. Alternatively or additionally, the one or more semiconductor elements may be configured to perform switching or rectification operations, e.g., in power electronics (e.g., using one or more power semiconductor circuit elements).

[0017] Various semiconductor circuit elements, such as at least one of a transistor and a diode, may be configured for high-voltage applications (also referred to as a high-voltage diode or high-voltage transistor). Alternatively or additionally, various semiconductor circuit elements, such as at least one of a transistor and a diode, may be configured to be emitter-controlled (also referred to as EMCON). Various semiconductor circuit elements may be a power semiconductor circuit element.

[0018] According to various embodiments, a transistor may be one of various types of transistors, such as, but not limited to, a bipolar transistor (BJT), a heterojunction BJT, a Schottky BJT, an insulated gate BJT also referred to as IGBT, a field effect transistor (FET), a junction field effect transistor, a metal oxide semiconductor field effect transistor (MOSFET), a dual gate MOSFET, a fast reverse or fast recovery epitaxial diode FET, an insulated gate heterostructure FET, a modulation doped FET, a tunnel FET.

[0019] According to various embodiments, a semiconductor chip may be singulated from the wafer by removing material from a cut region of the wafer (also referred to as dicing or cutting the wafer). For example, the removal of material from the cut region may be performed by scribing and breaking, cleaving, dicing, plasma dicing, laser sawing, or mechanical sawing (e.g., using a dicing saw). After singulation, the semiconductor chip may be electrically contacted and encapsulated, e.g., by molding materials, in a chip carrier (also called a chip package), which is then suitable for use in electronic devices. For example, the semiconductor chip may be bonded to a chip carrier by wires, and the chip carrier may be soldered to a circuit board and / or a lead frame (e.g., an IGBT or a power MOSFET).

[0020] According to various embodiments, a method for planarizing one or more workpieces, a workpiece planarization assembly, a chuck, and an interchangeable workpiece carrier (e.g., for a chuck) are provided. The one or more workpieces (in other words, the workpiece or each workpiece) may be a planarization housing comprising the wafer and sacrificial material (e.g., in the form of a sacrificial foil). It is understood herein that other workpieces may also be processed.

[0021] According to various embodiments, it has been found that a self-planarization process of a chuck is limited in its precision due to the material typically chosen for the chuck. A conventional chuck is made of steel and coated with a nickel-phosphorus alloy. For the self-planarization process, a portion of the nickel-phosphorus coating is removed (e.g., approximately 3 µm to 10 µm per self-planarization). The nickel-phosphorus coating is significantly harder than the planarization housing, which makes it necessary for the conventional self-planarization process to modify the configuration of the entire device (e.g., changing the cutting edge, slower cutting speed, slower rotation), resulting in at least one of the thermal and mechanical conditions being different from planarizing one or more workpieces (e.g., the planarization housing).This difference significantly influences the planarization levels in both configurations, making them different from each other. Furthermore, conventional self-planarization requires a long tool downtime (e.g., more than 4 to 5 hours). Frequent vacuum failures can occur during conventional self-planarization.

[0022] In addition, the chuck must be replaced when the nickel-phosphorus coating wears off, which is very costly. Due to the modification of the fixture and the limited thickness of the nickel-phosphorus coating, the total and / or per-time self-planarization cycles are limited. Therefore, plane-parallel alignment is susceptible to particle contamination of the chuck, especially if the particles cannot be removed by damage-free cleaning.

[0023] Various embodiments provide a novel chuck design for strip planarization. Various embodiments provide an insert (e.g., consisting of a synthetic material such as PET) for a chuck (e.g., a wafer chuck). The insert can be a cost-effective part that can be replaced after several self-cuts. Various embodiments provide an insert disk, e.g., with grooves.

[0024] According to various embodiments, the chuck is configured to be self-planarized in at least one of the same physical configuration and using the same cutting part as the one or more workpieces (e.g., in nearly the same cutting part configuration). Therefore, no difference in the planarization levels may occur for both the planarization of the one or more workpieces and the chuck, such that they have identical planarization levels. For example, the chuck may comprise a material similar to that of the workpiece or each workpiece (e.g., the sacrificial material), such that the chuck is machineable in at least one of the same physical configuration and using the same cutting part as the workpiece or each workpiece. For example, the chuck may comprise a polymer (e.g.,Polyethylene terephthalate) having a modulus of elasticity configured to allow the chuck and the one or more workpieces to be planarized under the same conditions.

[0025] Compared to conventional chucks (e.g. with a nickel-phosphorus coating), the following can be provided: The process parameters for planarizing one or more workpieces and the chuck (also referred to as self-cutting) can be similar, e.g., the same. Thermal influences (e.g., loading) during planarizing the one or more workpieces and the chuck can be similar, e.g., the same. a total thickness variation can be reduced to less than about 2 µm, e.g., less than about 1 µm, e.g., less than about 0.5 µm, e.g., less than about 0.2 µm; alternatively or additionally, the total thickness variation can be kept stable (e.g., reproducible) over the processing of more than one wafer, e.g., more than 10 wafers, e.g., more than 100 wafers; The workpiece planarization assembly can be used in at least one of the same physical configuration and the same cutting part (e.g., in the same configuration, also referred to as the cutting part configuration). In other words, it is not necessary to modify the workpiece planarization assembly when switching between planarizing the one or more workpieces and planarizing the chuck; reducing (e.g. avoiding) wear of the diamond cutting part and reducing (e.g. avoiding) damage to the diamond cutting part (during self-planarization); reducing (e.g. avoiding) maintenance intervention (e.g. self-planarization can be performed in a standard configuration); reducing the downtime of the plant (e.g. to less than a few minutes); reducing costs due to deposit replacement;

[0026] The chuck can be self-planarized (also called self-cutting) in accordance with a predetermined frequency, e.g. more frequently than monthly, e.g. more frequently than weekly, e.g. more frequently than daily, e.g. more frequently than hourly; increased stability of at least one of the integrated circuit manufacturing process and the integrated circuit manufacturing system; reducing maintenance and service costs; reducing the friction of the cutting part; if particle contamination is detected, self-planarization can be performed (e.g., automatic control can be provided); a risk of contamination on at least one of the chuck and the integrated circuits can be reduced; and the stability of the vacuum during the processing of one or more workpieces (e.g. including the wafer) can be increased.

[0027] According to various embodiments, the overall thickness variation of a wafer and / or integrated circuits can be improved. For example, a workpiece planarization arrangement is provided that enables the reduction of thickness variations, for example, to less than 1 µm, e.g., in the case of a wafer with a 300 mm diameter. This can increase the reproducibility of the thinning process, reduce the number of defective integrated circuits, and improve the quality of the integrated circuits.

[0028] Fig. 1 illustrates a workpiece planarization assembly 100 in a schematic top view according to various embodiments.

[0029] The workpiece planarization assembly 100 may include a chuck 102 and, optionally, one or more workpieces 106 arranged thereon. The workpiece planarization assembly 100 may also include a planarization tool 104.

[0030] The planarization tool 104 can have a cutting part carrier 104c rotatable about a rotation axis 101a. Furthermore, the planarization tool 104 can have a cutting part 104b mounted on the cutting part carrier 104c. The cutting part 104b can have or be formed from a tip. Alternatively or additionally, the cutting part 104b can have or be formed from a blade.

[0031] The rotatable cutting part carrier 104c and the chuck 102 can be configured for at least two-axis displacement relative to each other. A first axis 101 of the two-axis displacement can be parallel to the rotation axis 101a. A second axis 103 of the two-axis displacement can be normal to the rotation axis 101a. The rotatable cutting part carrier 104c and the chuck 102 can be configured for at least one of a first displacement 101d along the first axis 101 (see also Fig. 2) and a second displacement 103d along the second axis 103. Optionally, the rotatable cutting part carrier 104c and the chuck 102 can be configured for displacement along a third axis 105, which is perpendicular to both the first axis 101 and the second axis 103.

[0032] A rotational speed for rotating the cutting part carrier 104c and / or rotating the cutting part 104b may be in a range of about 500 revolutions per minute to about 5000 revolutions per minute, e.g., in a range of about 1000 revolutions per minute to about 3000 revolutions per minute, e.g., about 2000 revolutions per minute.

[0033] A speed of the second displacement 103d may be in the range of about 0.1 mm per second to about 20 mm per second (mm / s), e.g., in the range of about 0.1 mm per second to about 5 mm per second, e.g., in the range of about 0.5 mm per second to about 2 mm per second, e.g., about 1 mm per second.

[0034] The workpiece planarization assembly 100 may include or be formed from a fly knife. The workpiece planarization assembly 100 may include a rotating spindle 104c with a diamond tip 104b. The rotating diamond tip 104b may be configured to remove material from the one or more workpieces 106, e.g., from a sacrificial foil disposed on a wafer. The workpiece 106 or each workpiece 106 may be planarized to provide one or more workpieces 106 having two mutually plane-parallel surfaces (also referred to as a planarized workpiece or planarized workpieces). According to various embodiments, variations during planarization may be reduced.

[0035] Fig. 2 illustrates a workpiece planarization arrangement 200 in a schematic cross-sectional view or a side view according to various embodiments (e.g., view along direction 105), e.g., the previously described workpiece planarization arrangement.

[0036] The cutting part carrier 104c may have a cutting part base 104h (e.g., a shank) for receiving the cutting part 104b. The cutting part 104b may be replaceably attached via the cutting part base 104h.

[0037] According to various embodiments, interchangeably attached may mean configured for non-destructive assembly and disassembly, e.g., without destroying or damaging the two interchangeably attached parts.

[0038] The rotatable cutting part carrier 104c and the chuck 102 can be configured for physical contact of the cutting part 104b with at least one of the chuck 102 and the (or each) workpiece 106, e.g., by reducing a distance between the cutting part 104b of at least one of the chuck 102 and the workpiece 106 or each workpiece 106 (e.g., the first displacement 101d along the first axis 101) by the first displacement 101d. For the first displacement 101d, at least one of the chuck 102 and the planarization tool 104 can be configured to move parallel to direction 101 (e.g., parallel to axis 101a). For the second displacement 103d, at least one of the chuck 102 and the planarization tool 104 may be configured to move parallel to direction 103 (e.g., perpendicular to axis 101a).

[0039] Fig. 3 illustrates a workpiece planarization assembly 300 in a schematic cross-sectional view according to various embodiments (e.g., view along direction 105).

[0040] The planarization tool 104 may be configured to planarize the workpiece 106 or each workpiece 106 on the chuck 102. While the cutting part 104b is in contact with at least one of the chuck 102 and the workpiece 106 or each workpiece 106, the cutting part 104b may rotate about the rotational axis 101a. During the physical contact, the workpiece 106 or each workpiece 106 may be planarized by subtractive manufacturing (including at least one of cutting and machining).

[0041] The workpiece 106 or each workpiece 106 may comprise or be formed from one or more layers, e.g., a plurality of layers (also referred to as a layer stack). The workpiece 106 or each workpiece 106 may comprise or be formed from at least one of the following layers: a first layer 106f, a second layer 106s, a third layer 106a, and a fourth layer 106w. The first layer 106f (also referred to as sacrificial layer 106f or portion to be planarized) may comprise or be formed from a polymer, e.g., one or more polymer films (also referred to as polymer films) and / or one or more polymer tapes. A tape may also be referred to as a self-adhesive film.

[0042] The optional third layer 106a (also referred to as adhesion layer 106a) may include or be formed from an adhesion polymer (e.g., imide). The fourth layer 106w (also referred to as semiconductor layer 106w or wafer 106w) may include or be formed from semiconductor material. The optional second layer 106s (also referred to as stabilization layer 106s) may include or be formed from a material that is more stable (e.g., at least one of harder and thicker) than at least one of the first layer 106f and the fourth layer 106w. For example, the fourth layer 106w may include or be formed from at least one of a ceramic, a metal, and / or a glass. The optional second layer 106s may be disposed between the first layer 106f and the fourth layer 106w. The first layer 106f may be adhered to the second layer 106s (if present).

[0043] According to various embodiments, at least the first layer 106 of the workpiece 106 or each workpiece 106 may be subtractively manufactured by the machining cutting part 104b. Subtractive manufacturing may form a planarized surface 106p of the workpiece 106 or each workpiece 106. The planarized surface 106p of the workpiece 106 or each workpiece 106 may be plane-parallel to a surface 106b of the wafer 106w that is in contact with the chuck 102 (opposite the first layer 106f).

[0044] The wafer 106 may include one or more integrated circuits 106c, e.g., each comprising or formed from a chip, a transistor, or a diode, e.g., in the form of integrated power circuits 106c. The one or more integrated circuits 106c may each include a plurality of doped semiconductor regions. The one or more integrated circuits 106c may be covered by the first layer 106f, optionally the second layer 106s, and optionally the third layer 106a.

[0045] The first layer 106f may be planarized (smoothed and aligned) by rotating 101r the cutting part carrier 104c, which includes the machining cutting part 104b. According to various embodiments, a mechanical hardness of the machining cutting part 104b may be greater than (e.g., about 200% or about 500%) a mechanical hardness of the workpiece 106 or each workpiece 106, for example, a mechanical hardness of at least one of the first layer 106f, the second layer 106s, the third layer 106a, and the fourth layer 106w.

[0046] According to various embodiments, the machining cutting part 104b may comprise or be formed from carbon, e.g., in at least one of a diamond configuration and a diamond-like carbon configuration. Alternatively or additionally, the machining cutting part 104b may comprise or be formed from at least one of a carbide and a nitride (e.g., a metal carbide such as tungsten carbide and / or a metal nitride).

[0047] For example, the cutting edge part 104b may comprise or be formed from a ceramic. A ceramic may be understood as an inorganic, non-metallic solid material, e.g., including metal, non-metal, and / or metalloid atoms held primarily in ionic and covalent bonds. For example, the ceramic may comprise or be formed from a carbide (e.g., a metal carbide), a nitride (e.g., metal nitride), or an oxide (e.g., a metal oxide such as aluminum oxide, e.g., corundum).

[0048] A mechanical hardness of the cutting edge 104 may be a Mohs hardness of greater than about 4 (corresponding to a Vickers hardness of greater than about 189 and a Rockwell B hardness of greater than about 92 and a Rockwell C hardness of greater than about 13), e.g., greater than or equal to about 5, e.g., greater than or equal to about 6, e.g., greater than or equal to about 7, e.g., greater than or equal to about 8, e.g., greater than or equal to about 9, e.g., greater than or equal to about 9.5.

[0049] For example, the front surface 106p and the back surface 106b are plane-parallel after planarization.

[0050] In various embodiments, the first layer 106f may comprise or be formed from a polymer film. In various embodiments, the second layer 106s may comprise or be formed from a glass plate. In various embodiments, the third layer 106a may comprise or be formed from a polymer adhesive. In various embodiments, the fourth layer 106w may comprise or be formed from a semiconductor substrate.

[0051] In an optional embodiment, the first layer 106f may be bonded to the fourth layer 106w (e.g., in direct physical contact or with an adhesive therebetween). For example, the polymer film may be in direct contact with the semiconductor substrate (e.g., using a self-adhesive film).

[0052] Fig. 4 illustrates a workpiece planarization assembly 400 in a schematic cross-sectional view according to various embodiments (e.g., view along direction 105).

[0053] The workpiece planarization assembly 400 may include the chuck 102. The chuck 102 may include or be formed from a support beam 102c and a workpiece carrier 102s. The workpiece carrier 102s may be configured to receive the one or more workpieces 106. For example, the workpiece 106 or each workpiece 106 may be disposed in and on the workpiece carrier 102s. For example, the workpiece 106 or each workpiece 106 may be replaceably secured to the workpiece carrier 102s (also referred to as an insert), e.g., by at least one of adhesion, fastening (e.g., by pins, screws, or the like), and form-fitting. Alternatively or additionally, at least one of electrostatic adhesion and pneumatic adhesion may be used to secure the workpiece carrier 102s.The pneumatic adhesion may be provided by at least one of the formation and maintenance of a vacuum between the workpiece 106 or each workpiece 106 and the workpiece carrier 102s.

[0054] A thickness of the workpiece carrier 102s (extension parallel to the rotation axis 101a) can be more than about 10 micrometers (µm), e.g. more than about 100 µm, e.g. more than about 250 µm, e.g. more than about 500 µm, e.g. more than about 1 millimeter (mm), e.g. more than about 10 mm.

[0055] According to various embodiments, the support carrier 102c may comprise or be formed from a metallic material, e.g., stainless steel. According to various embodiments, a metallic material may comprise or be formed from at least one chemical element from the following group of chemical elements (also referred to as metals): tungsten (W), aluminum (Al), copper (Cu), nickel (Ni), magnesium (Mg), chromium (Cr), iron (Fe), zinc (Zn), tin (Sn), gold (Au), silver (Ag), iridium (Ir), platinum (Pt), indium (In), cadmium (Cd), bismuth (Bi), vanadium (V), titanium (Ti), palladium (Pd), or zirconium (Zr), or a metal alloy comprising at least one chemical element from the group of chemical elements. For example, a metal alloy may comprise at least two metals (e.g., two or more than two metals, e.g., in the case of an intermetallic compound) or at least one metal (e.g.,one or more than one metal) and at least one other chemical element (e.g., a non-metal or a semi-metal). For example, a metal alloy may comprise or be formed from at least one metal and at least one non-metal (e.g., carbon (C) or nitrogen (N)), e.g., in the case of steel (e.g., stainless steel). For example, a metal alloy may comprise or be formed from more than one metal (e.g., two or more metals), e.g., different compositions of gold with aluminum, different compositions of copper with aluminum, different compositions of copper and zinc (e.g., “brass”), or different compositions of copper and tin (e.g., “bronze”), e.g., including various intermetallic compounds. According to various embodiments, a metallic material may be electrically conductive.

[0056] The workpiece carrier 102s may be replaceably mounted on the support carrier 102c, e.g., by at least one of: adhesion, fastening (e.g., by pins, screws, and the like), and positive locking. Alternatively or additionally, at least one of electrostatic adhesion and pneumatic adhesion may be used. Pneumatic adhesion may be provided by at least one of forming and maintaining a vacuum between the workpiece carrier 102s and the support carrier 102c. According to various embodiments, replaceably mounted may mean configured for non-destructive assembly and disassembly, e.g., without destroying or damaging the workpiece carrier 102s and the support carrier 102c.

[0057] Additionally, the workpiece planarization assembly 400 may include the planarization tool 104. The planarization tool 104 may be configured to planarize the workpiece carrier 102s (e.g., to adjust the chuck through self-planarization) and to planarize one or more workpieces when disposed on the chuck 102.

[0058] The planarization tool 104 and the chuck 102 may be configured for physical contact of the planarization tool 104 (e.g., its cutting edge 104b) with the workpiece support 102s, e.g., by reducing a distance between the cutting edge 104b and the workpiece support 102s (by the displacement along the first axis 101) through the first displacement 101d. For the first displacement 101d, at least one of the chuck 102 and the planarization tool 104 may be configured to move parallel to direction 101 (e.g., parallel to axis 101a).

[0059] The planarization tool 104 may be configured to planarize the workpiece support 102s (also referred to as self-planarization). While the machining cutting part 104b is in physical contact with the workpiece support 102s, the machining cutting part 104b may rotate about the rotation axis 101a. Due to the physical contact, at least a portion 102p of the workpiece support 102s may be subtractively machined by the planarization tool 104 (including at least one of cutting and machining), thereby forming a planarized surface 122s of the workpiece support 102s. The at least one portion 102p of the workpiece support 102s (planarized or to be planarized) may also be referred to as a sacrificial support region 102p. The planarized surface 102s of the workpiece carrier 102s may be plane-parallel to a planarization plane defined by the planarization tool 104.

[0060] A mechanical hardness of the sacrificial support region 102p (also referred to as sacrificial portion 102p of the workpiece carrier 102s) may be less than (e.g., about 75%, about 50%, about 25%, about 10%, about 5%, or about 2% of) a mechanical hardness of at least one of the support carrier 102c and the machining cutting part 104b. Alternatively or additionally, the mechanical hardness of the support carrier 102c may be less than (e.g., about 75%, about 50%, about 25%, about 10%, about 5%, or about 2% of) the mechanical hardness of the machining cutting part 104b. In other words, the mechanical hardness of the machining cutting part 104b may be greater (more) than the mechanical hardness of at least one of the support carrier 102c and the sacrificial support region 102p.

[0061] During planarization of the one or more workpieces 106, at least a portion 106f of the workpiece 106 may be subtractively fabricated by the planarization tool 104. The at least one portion 106f of the workpiece 106 or each workpiece 106 (planarized or to be planarized) may also be referred to as a sacrificial workpiece region 106f.

[0062] According to various embodiments, the mechanical hardness of the sacrificial support region 102p may be in a range of about 20% to about 500% of the mechanical hardness of the sacrificial workpiece region 106f (e.g., the first layer 106f), e.g., in a range of 50% to about 200% of the mechanical hardness of the sacrificial workpiece region 106f. Alternatively or additionally, the mechanical hardness of the sacrificial support region 102p may be less than (e.g., about 75%, about 50%, about 25%, about 10%, about 5%, or about 2% of) a mechanical hardness of at least one of a nickel-based alloy (e.g., produced by electroless nickel plating), e.g., a nickel-phosphorus alloy, and an iron-based alloy, e.g., steel. The mechanical hardness of the nickel-based alloy (e.g. a Rockwell C hardness of more than about 50, which corresponds to a Brinell hardness of more than about 469) may be greater than the mechanical hardness of the iron-based alloy (e.g.a Rockwell C hardness of greater than about 25, which corresponds to a Brinell hardness of greater than about 250). A metal-based alloy may refer to an alloy that has more than about 50 atomic percent of the metal, e.g., more than about 70 atomic percent of the metal, e.g., more than about 80 atomic percent of the metal, e.g., more than about 90 atomic percent of the metal.

[0063] The mechanical hardness of at least one of the sacrificial support region 102p, the one or more workpieces 106, the chuck 102, the support carrier 102c, and the workpiece carrier 102s may be less than (e.g., about 75%, about 50%, about 25%, about 10%, about 5%, or about 2%) a mechanical hardness of the cutting part 104.

[0064] According to various embodiments, the tool carrier 102s may consist entirely of the sacrificial support region 102p. Alternatively, the sacrificial support region 102p may be removed from the support carrier 102c. For example, the sacrificial support region 102p may comprise at least one layer (see, e.g., Fig. 8), e.g. at least one of a film and a plate, or consist of it.

[0065] According to various embodiments, mechanical hardness (also referred to simply as hardness) can be understood as a measure of how resistant a solid material or body is to various types of permanent deformation when a compressive force is applied.

[0066] The mechanical hardness of a body or material may depend on at least one of the ductility of the body or material, elastic stiffness of the body or material, plasticity of the body or material, stress of the body or material, strength of the body or material, toughness of the body or material, viscoelasticity of the body or material, and viscosity of the body or material. A hard body or material may comprise or be formed from ceramics, certain metals, and metal compounds. A soft body or material may comprise or be formed from a polymer, such as plastic. The hard body or material may have greater mechanical hardness than a soft body or material.

[0067] According to various embodiments, the relationships in mechanical hardness can be understood as referring to the same measurement method, e.g., to at least one of a compressive hardness measurement and a scratch hardness measurement. A compressive hardness measurement can indicate the hardness of a material or body against deformation due to a constant compression load from a standardized object, e.g., a sharp object. A scratch hardness measurement can indicate the resistance of a material or body to fracture or permanent plastic deformation due to friction from a standardized object, e.g., a sharp object.

[0068] Mechanical hardness can refer to a compressive hardness, e.g., in accordance with at least one of the following measurement methods: Rockwell hardness (DIN EN ISO 6508-1), Martens hardness (DIN EN ISO 14577), Brinell hardness (EN ISO 6506-1 to EN ISO 6506-4), Vickers hardness (DIN EN ISO 6507-1), and Shore hardness (DIN EN ISO 868 and DIN ISO 7619-1). Alternatively or additionally, mechanical hardness can refer to a scratch hardness, e.g., in accordance with the Mohs scale (Mohs hardness), or a grinding hardness, e.g., in accordance with the Rosiwal scale (Rosiwal hardness). Rockwell hardness can differentiate between Rockwell B hardness and Rockwell C hardness.

[0069] The mechanical hardness of the sacrificial support region 102p may be a Vickers hardness of less than or equal to about 200, e.g., less than or equal to about 150, e.g., less than or equal to about 100, e.g., less than or equal to about 75, e.g., less than or equal to about 50, e.g., less than or equal to about 25, e.g., less than or equal to about 20, e.g., less than or equal to about 10, e.g., less than or equal to about 5, e.g., less than or equal to about 2.5.

[0070] The mechanical hardness of the sacrificial support region 102p may be a Mohs hardness of less than or equal to about 4 (corresponding to a Vickers hardness of less than or equal to about 189 and a Rockwell B hardness of less than or equal to about 92 and a Rockwell C hardness of less than or equal to about 13), e.g., less than or equal to about 3 (corresponding to a Vickers hardness of less than or equal to about 109 and a Rockwell B hardness of less than or equal to about 61), e.g., less than or equal to about 2.5, e.g., less than or equal to about 2 (corresponding to a Vickers hardness of less than or equal to about 36), e.g., less than or equal to about 1.5, e.g., less than or equal to about 1 (corresponding to a Vickers hardness of less than or equal to about 2.4).

[0071] According to various embodiments, a mechanical hardness of a material may refer to a standardized mechanical hardness of a body made from the material, e.g., a block made from the material and / or a pore-free body. The mechanical hardness of a material may be understood as independent of the shape of the body.

[0072] According to various embodiments, the mechanical hardness may be a spatially averaged mechanical hardness, e.g., spatially averaged over at least one of a region, a body, and a material.

[0073] According to various embodiments, a mechanical hardness according to a first measurement method can be converted into a corresponding mechanical hardness according to a second measurement method (e.g., using a hardness conversion table), for example, expressing the same physical property. For example, a mechanical hardness value according to Brinell hardness can be substantially equivalent to the value according to Vickers hardness (within a deviation of less than 10%).

[0074] A relationship described herein (greater or smaller) may be maintained during the conversion from the first measurement method to the second measurement method. For example, a relationship of "a first mechanical hardness greater than a second mechanical hardness" may be maintained regardless of whether it was expressed according to the first measurement method or the second measurement method. A body or material having the first mechanical hardness may scratch or deform at least one of a body or material having the second mechanical hardness when a load physically touching them (contact pressure) is applied.

[0075] A thickness of the at least one section 102p (extension parallel to the rotation axis 101a) may be more than about 10 micrometers (µm), e.g., more than about 100 µm, e.g., more than about 250 µm, e.g., more than about 500 µm, e.g., more than about 1 millimeter (mm), e.g., more than about 10 mm.

[0076] Fig. 5 illustrates a chuck 500 in a schematic cross-sectional view according to various embodiments (e.g., view along direction 105).

[0077] According to various embodiments, the support bracket 102c may include at least one vacuum line 402 (e.g., a plurality of vacuum lines 402) for connecting to a vacuum-generating system 404. The vacuum-generating system 404 may include or be formed from at least one pump, e.g., a vacuum pump. The vacuum-generating system 404 may be connected to the at least one vacuum line 402 of the support bracket 102c, e.g., via a vacuum tube. The vacuum-generating system 404 may be configured to generate a vacuum in the at least one vacuum line 402 of the support bracket 102c via the connection. The vacuum line(s) 402 may also be referred to as vacuum channel(s) or vacuum tube(s).

[0078] According to various embodiments, the workpiece carrier 102s may have at least one through-opening 414 (e.g., a plurality of through-openings 414) connected to the at least one vacuum line 402 of the support carrier 102c (e.g., such that one or more workpieces adhere to the workpiece carrier 102s by suction force when a vacuum is generated via the at least one vacuum line 402 of the support carrier 102c). In other words, the at least one through-opening 414 may be arranged such that it couples the at least one vacuum line 402 when the workpiece carrier 102s is arranged at least in or on the support carrier 102c.

[0079] According to various embodiments, the workpiece carrier 102s may have a recess 414r connected to the at least one through-opening 414. The recess 414r may define an adhesion region of the workpiece carrier 102s, via which the one or more workpieces 106 may be adhered by suction force when a vacuum is generated via the at least one vacuum line 402 of the support carrier 102c. For example, during the planarization of one or more workpieces 106, a vacuum may be generated in the recess 414r via the at least one through-opening 414.

[0080] A depth of the recess 414r (extension parallel to the rotation axis 101a) may be less than a thickness of at least one of the workpiece carrier 102s and the sacrificial support region 102p, e.g., in the range of about 50% to about 95% of the thickness of at least one of the workpiece carrier 102s and the sacrificial support region 102p, e.g., more than about 100 µm, e.g., more than about 250 µm, e.g., more than about 500 µm, e.g., more than about 1 millimeter (mm), e.g., more than about 10 mm.

[0081] The chuck 500 (e.g., its support bracket 102c) may include a supply port 502 for supplying the workpiece. The supply port 502 may include or be formed from one or more supply connections. The one or more supply connections may be configured for connection to a supply device (e.g., a vacuum-generating system 404 or a voltage source 404), e.g., via a supply connection.

[0082] For example, if the chuck 500 is configured to adhere the workpiece 106 by suction (also referred to as pneumatic adhesion), the supply port 502 may include or be formed from one or more vacuum connectors. The supply port 502 may be configured to be coupled to the vacuum generating system 404 or may be coupled thereto. The supply port 502 may couple all of the vacuum lines 402 together. Pneumatic adhesion may be provided by at least one of forming and maintaining a vacuum at least in or via the vacuum lines 402.

[0083] For example, if the chuck 500 is configured to adhere the workpiece 106 by electrostatic force (also referred to as electrostatic adhesion), the supply port 502 may include or be formed from one or more electrical connectors. The supply port 502 may be configured to be coupled to, or may be coupled to, a corresponding electrical voltage source 404 (e.g., a power source). Electrostatic adhesion may be achieved by providing an electrostatic potential (also referred to as electrical voltage) to the chuck 500 (e.g., its workpiece carrier 102s).

[0084] Optionally, the supply port 502 may be configured for adhering the workpiece carrier 102c, optionally, e.g., by at least one of electrostatic adhesion and pneumatic adhesion.

[0085] In a related embodiment, the support carrier 102c may include a plurality of vacuum lines 402. The workpiece carrier 102s may include a plurality of through-openings 414. Each through-opening of the plurality of through-openings 414 may be connected to at least one vacuum line of the plurality of vacuum lines 402.

[0086] According to various embodiments, the support bracket 102c may include a recess 416r for receiving the workpiece carrier 102s. The recess 416r of the support bracket 102c may be configured such that the workpiece carrier 102s protrudes from the support bracket 102c when received in the recess 416r of the support bracket 102c. The recess 416r may enable the positioning of the workpiece carrier 102s relative to the support bracket 102c to connect each through-hole to at least one vacuum line.

[0087] The workpiece carrier 102s may protrude from the support carrier 102c by more than about 10 micrometers (µm), e.g., more than about 100 µm, e.g., more than about 250 µm, e.g., more than about 500 µm, e.g., more than about 1 millimeter (mm), e.g., more than about 10 mm.

[0088] Fig. 6A illustrates a sacrificial support region 600 (e.g., of a chuck 102 or its workpiece carrier 102s) according to various embodiments in a schematic cross-sectional view or plan view (e.g., view along direction 101) and Fig. 6B illustrates the sacrificial support region 600 in a schematic cross-sectional view 651 (e.g., view along direction 105). The sacrificial support region 600 may be planarized or to be planarized. The sacrificial support region 600 may be understood as being used for processing a plurality of workpieces 106 (e.g., before being replaced). In one or more embodiments, the sacrificial support region 600 may be consumed during planarization of the chuck 102. After the sacrificial support region 600 has been consumed, it may be replaced (e.g., by replacing the entire chuck 102 or at least the workpiece carrier 102s). In other words, the sacrificial support region 600 may be a wear support region 600.

[0089] According to various embodiments, the sacrificial support region 600 may include two or more than two (a plurality of) adhesion regions 602a, 602b that are separated from each other, e.g., separated gases. For example, the adhesion regions 602a, 602b may be separated from each other by one or more protruding partition walls 604.

[0090] Each adhesion region of the plurality of adhesion regions 602a, 602b may have at least one through-opening of the plurality of through-openings 414. For example, a first adhesion region 602a may have one or more through-openings 414, and a second adhesion region 602b may have one or more through-openings 414. The one or more through-openings of the first adhesion region 602a may be spaced apart from the one or more through-openings of the second adhesion region 602b, e.g., separated by the partition wall 604.

[0091] For example, the first adhesion region 602a may at least partially surround the second adhesion region 602b. Optionally, the one or more further adhesion regions may at least partially surround the first adhesion region 602a and the second adhesion region 602b.

[0092] According to various embodiments, at least one adhesion region of the plurality of adhesion regions 602a, 602b may have a recess 414r connected to the at least one through-opening 414 of the adhesion region of the plurality of adhesion regions 602a, 602b. For example, the first adhesion region 602a may have a recess 414r connected to the at least one through-opening 414 of the first adhesion region 602a. Alternatively or additionally, the second adhesion region 602b may have a recess 414r connected to at least one through-opening 414 of the second adhesion region 602b.

[0093] According to various embodiments, the partition wall 604 of each adhesion region of the plurality of adhesion regions 602a, 602b may be part of the sacrificial support region 102p, e.g., monolithically. The partition wall 604 of each adhesion region of the plurality of adhesion regions 602a, 602b may be the sidewalls of the recess 414r of the corresponding adhesion region. The recesses 414r of the plurality of adhesion regions 602a, 602b may be formed in the sacrificial support region 600.

[0094] For example, the partition walls 604 of each adhesion region of the plurality of adhesion regions 602a, 602b may be monolithically connected to one another, e.g., as a monolithic part of the sacrificial support region 600.

[0095] Fig. 7A illustrates a sacrificial support region 700 (e.g., of a chuck 102 or its workpiece carrier 102s) according to various embodiments in a schematic cross-sectional view or top view (e.g., view along direction 101) and Fig. 7B illustrates the sacrificial support region 700 in a schematic cross-sectional view 751 (e.g., a view along direction 105). The sacrificial support region 700 may be planarized or to be planarized.

[0096] According to various embodiments, at least one adhesion region of the plurality of adhesion regions 602a, 602b may include one or more support protrusions 704 disposed in the recess 414r of the adhesion region of the plurality of adhesion regions 602a, 602b. For example, the first adhesion region 602a may include one or more support protrusions 704 disposed in the recess 414r of the first adhesion region 602a. Alternatively or additionally, the second adhesion region 602b may include one or more support protrusions 704 disposed in the recess 414r of the second adhesion region 602b.

[0097] According to various embodiments, the support projections 704 may be part of at least one portion of the workpiece carrier 700. Alternatively or additionally, the support projections 704 may be monolithically connected to at least one of each other and the partition wall 604, e.g., as a monolithic part of the sacrificial support region 700.

[0098] Fig. 8A illustrates a workpiece carrier 800 of a chuck according to various embodiments in a schematic cross-sectional view or top view (e.g., view along direction 101).

[0099] According to various embodiments, the workpiece carrier 800 may include at least one further portion 802 (e.g., proximate to at least one of the support carrier 102c and a first side 800a). For example, the at least one further portion 802 of the workpiece carrier 800 may provide stabilization of the sacrificial support region 102p. The at least one further portion 802 may also be referred to as a carrier stabilization region 802.

[0100] According to various embodiments, the workpiece carrier 800 and the support carrier 102c may be configured relative to each other such that the at least one portion 102p of the workpiece carrier 800 protrudes from the support carrier 102c.

[0101] The sacrificial support region 102p may include at least one of a surface to be planarized and the planarized surface 122s (also referred to as a support surface) that provides physical contact with one or more workpieces 106 on the workpiece support 800.

[0102] The sacrificial support region 102p may be disposed on a second side 800b of the workpiece carrier 800 (also referred to as the carrier side). The carrier stabilization region 802 may be disposed on a first side 800a of the workpiece carrier 800 (also referred to as the attachment side). The first side 800a may be opposite the second side 800b. Optionally, one or more additional portions of the workpiece carrier 800 may be disposed between the sacrificial support region 102p and the carrier stabilization region 802.

[0103] When the workpiece carrier 800 is disposed in the support carrier 102c, the carrier stabilization region 802 may be disposed between the support carrier 102c and the sacrificial support region 102p.

[0104] According to various embodiments, the workpiece carrier 800 can be plate-shaped. For example, the workpiece carrier 800 can comprise a plate (e.g., a disk) or be formed from it.

[0105] Fig. 8B illustrates a chuck 850 according to various embodiments in a schematic cross-sectional view or top view (e.g., view along direction 101) with a non-replaceable workpiece carrier 102s. For example, the chuck 850 may not necessarily include the replaceable workpiece carrier 102s. The workpiece carrier 102s may be connected to the support carrier 102c of the chuck 850.

[0106] According to various embodiments, the chuck 850 may include the sacrificial support region 102p and the support beam 102c (e.g., analogous to the beam stabilization region 102c).

[0107] The sacrificial support region 102p may include at least one of a surface to be planarized and the planarized surface 122s (also referred to as a support surface) that provides physical contact with one or more workpieces 106 on the chuck 850.

[0108] The sacrificial support region 102p may be disposed on a second side 800b of the chuck 850 (also referred to as the support side). The support support 102c may be disposed on a first side 800a of the chuck 850 (also referred to as the attachment side). The first side 800a may be opposite the second side 800b. Optionally, one or more additional portions of the chuck 850 may be disposed between the sacrificial support region 102p and the support support 102c.

[0109] According to various embodiments, the chuck 850 may be plate-shaped. For example, the chuck 850 may comprise or be formed from a plate (e.g., a disk).

[0110] The sacrificial support region 102p of the chuck 850 may be configured similarly to the sacrificial support region 102p of the interchangeable workpiece carrier 800. Since the sacrificial support region 102p is a part of the chuck 850 or the interchangeable workpiece carrier 850 (see Fig. 8A and Fig. 8B), a mechanical hardness of the sacrificial support region 102p may be less than (e.g., about 75%, about 50%, about 25%, about 10%, about 5%, or about 2%) the mechanical hardness of at least one of: the beam stabilization region 802 and the support beam 102c. Alternatively or additionally, the mechanical hardness of the sacrificial support region 102p may be less than (e.g., about 75%, about 50%, about 25%, about 10%, about 5%, or about 2%) a mechanical hardness of at least one of a nickel-based alloy (e.g., made by electroless nickel plating), e.g., a nickel-phosphorus alloy, and an iron-based alloy, e.g., steel.

[0111] Optionally, the mechanical hardness of the support stabilization region 802 may be less than (e.g., about 75%, about 50%, about 25%, about 10%, about 5%, or about 2%) the mechanical hardness of at least one of: the support support 102c and the machining cutting part 104b.

[0112] According to various embodiments, the sacrificial support region 102p may comprise or be formed from a coating. The coating may comprise or be formed from one or more films, e.g., one or more polymer films, or one or more layers (e.g., forming a coating), e.g., one or more polymer layers, and optionally an adhesive layer to adhere the sacrificial support region 102p to the carrier stabilization region 802. For example, the sacrificial support region 102p (e.g., the one or more films) may be adhered to the carrier stabilization region 802, e.g., by the adhesive layer. Additionally or alternatively, the sacrificial support region 102p (e.g., the one or more layers) may be arranged on the carrier stabilization region 802, e.g., sprayed or powder-coated. The arranging may comprise exposure to an aerosol (also referred to as aerosol deposition, e.g.,Aerosol coating), wherein the aerosol comprises particles (e.g., solid and / or viscous, e.g., liquid, particles). Additionally or alternatively, the sacrificial support region 102p (e.g., the one or more layers) may be laminated, pressed, and / or cast.

[0113] For example, one or more films may be laminated to the support stabilization region 802 to form the one or more layers. Additionally or alternatively, a material may be pressed onto the support stabilization region 802 to form the one or more layers. Pressing may include deforming the material using pressure. For example, lamination may include pressing the film onto the support stabilization region 802 while heating the film.

[0114] For example, a material (also referred to as sacrificial material) disposed on the support stabilization region 802 may be cast and / or sintered to form the one or more layers. For example, the castable material may comprise or be formed from particles (e.g., from the aerosol) and / or may comprise or be formed from a paste (e.g., including a viscous material and / or particles). For example, the viscous material may be heat-solidified (e.g., dried) and / or form a matrix (e.g., a polymer matrix) in which the particles (e.g., metallic particles) are embedded. The matrix and the particles may differ in material, e.g., chemical composition. Additionally or alternatively, a hardness of the particles may be greater than a hardness of the matrix.

[0115] According to various embodiments, the sacrificial support region 102p (e.g., the particles, the sacrificial material, and / or the foil) may comprise or be formed from a polymer (e.g., organic or inorganic), e.g., at least one of a synthetic rubber, phenol-formaldehyde resin (or Bakelite), neoprene, nylon, polyvinyl chloride (PVC or vinyl), polystyrene, polyethylene (e.g., polyethylene terephthalate, also referred to as PET), polypropylene, polyacrylonitrile, PVB, silicone, or the like. Alternatively or additionally, the sacrificial support region 102p (e.g., the particles, the sacrificial material, and / or the foil) may comprise or be formed from a metallic material, e.g., having a Mohs hardness of less than about 4, e.g., less than about 3, e.g., less than about 2.5, e.g., less than about 2, e.g., less than about 1.5, e.g., less than about 1.For example, the metallic material of the sacrificial support region 102p may comprise at least one of the following metals: lead, indium, silver, aluminum, copper, and gold.

[0116] For example, the particles and / or the at least one layer may comprise or be formed from the sacrificial material, e.g. the polymer and / or the metal.

[0117] Laminating, casting, and / or pressing may be suitable for a sacrificial support region 102p (e.g., its one or more layers) comprising or formed from the polymer (e.g., polymer particles and / or polymer film). Sintering, pressing, and / or casting may be suitable for a sacrificial support region 102p (e.g., its one or more layers) comprising or formed from the metal (e.g., metal particles).

[0118] Optionally, casting, sintering, aerosol deposition, and / or powder coating may result in a sacrificial support region 102p (e.g., its one or more layers) containing a plurality of pores (e.g., between adjacent particles) and / or containing a plurality of particles (e.g., in contact with each other, e.g., like grains, and / or deformed). For example, the particles that were melted or sintered (during densification of the material) may be further visible as their remnants (e.g., deformed and / or interconnected particles). These particles (e.g., deformed and / or interconnected particles) may also be referred to as particle remnants.

[0119] A porosity (also referred to as vacancy fraction or pore fraction), e.g. of the sacrificial support region 102p (e.g. at least of its one sacrificial layer), may refer to vacancy space in a region and may be understood as a fraction of the volume of vacancies (also referred to as pores, e.g. gas inclusions) over the total volume or the total area of ​​the region (e.g. a layer or a material). A porous layer (e.g., the at least one sacrificial layer), region (e.g., the sacrificial support region 102p) or a porous material (in other words, containing pores) may, for example, have a porosity in the range of about 0.01 to about 0.9 (e.g., about 0.1 to about 0.9), or in other words, as a percentage in the range of about 1% to about 90% (e.g., about 10% to about 90%) or less than about 1% (e.g., more than about 0.01%, e.g., more than about 0.1%), e.g., in the range of about 0.01% to about 1%.The porosity may refer to a spatially averaged value, e.g., averaged over a region. According to various embodiments, the pore density and the spatial pore size may define the porosity. Alternatively or additionally, the pore density and the porosity may define the spatial pore size. Alternatively or additionally, the porosity and the spatial pore size may define the pore density. The more pores are present (e.g., contained in a region, e.g., a layer), the higher the pore density and / or the porosity may be.

[0120] For example, the density of the porous layer, region, or material may be lower than its full density (due to vacancies).

[0121] According to various embodiments, the carrier stabilization region 802 may comprise or be formed from a different metallic material, e.g., than the support carrier 102c.

[0122] Since the sacrificial support region 102p is part of the chuck 850 or the workpiece carrier 850, it can be configured as previously described (see, for example, Fig. 6A and Fig. 6A or Fig. 7A and Fig. 7B).

[0123] A thickness of the sacrificial support region 102p (extension parallel to the rotation axis 101a) may be more than about 10 micrometers (µm), e.g., more than about 100 µm, e.g., more than about 250 µm, e.g., more than about 500 µm, e.g., more than about 1 millimeter (mm), e.g., more than about 10 mm, e.g., more than about 20 mm.

[0124] Fig. 9 illustrates a chuck 900 according to various embodiments in a schematic cross-sectional view or top view (e.g., view along direction 101).

[0125] According to various embodiments, the chuck 900 may include a support carrier 102c and a workpiece carrier 102s replaceably mounted on the support carrier 102c. The mechanical hardness of the sacrificial support region 102p may be lower than the mechanical hardness of the support carrier 102c, e.g., as previously described. Optionally, the workpiece carrier 102s may extend at least partially into the support carrier 102c, as shown in Fig. 9. Alternatively, the workpiece carrier 102s may be arranged above the support carrier 102c (see e.g. Fig. 4). In both cases, at least the sacrificial support region 102p may protrude from the support carrier 102c. This may enable adjustment of the workpiece carrier 102s by planarization of the planarization tool 104.

[0126] Fig. Fig. 10A illustrates an interchangeable workpiece carrier 1000 (e.g., for a chuck) according to various embodiments in a schematic cross-sectional view (e.g., view along direction 101, e.g., along a cross-section 1051), and Fig. 10B shows the interchangeable workpiece carrier 1000 in a schematic plan view.

[0127] The interchangeable workpiece carrier 1000 may include a first side 800a configured to be interchangeably mounted on a support carrier 102c of the chuck 102, e.g., configured similarly to a support carrier 102c described above. The interchangeable workpiece carrier 1000 may further include a second side 800b opposite the first side 800a. The second side 800b may be configured to support one or more workpieces 106 and / or may include one or more protrusions.

[0128] The interchangeable workpiece carrier 1000 may further include at least one through-opening 414 (e.g., a plurality of through-openings 414) extending from the first side 800a to the second side 800b. This may allow one or more workpieces 106 picked up via the second side 800b to be adhered by suction when a vacuum is created in the at least one through-opening 414.

[0129] A mechanical hardness of at least a portion 102p (sacrificial support region 102p) of the workpiece carrier 1000 proximate to the second side 800b (e.g., partially covering it) may be less than (e.g., about 75%, about 50%, about 25%, about 10%, about 5%, or about 2%) a mechanical hardness of at least one of a nickel-based alloy, e.g., a nickel-phosphorus alloy, and an iron-based alloy, e.g., steel. Alternatively or additionally, the sacrificial support region 102p may comprise or be formed from a polymer. This may allow the workpiece carrier 1000 to be customized by planarization using a planarization tool 106.

[0130] Fig. 11 illustrates a method 1100 for planarizing one or more workpieces according to various embodiments in a schematic flow diagram.

[0131] According to various embodiments, the method at 1102 may include: exchanging (e.g., at least one of attaching and detaching) a workpiece carrier of a chuck (e.g., from the support carrier).

[0132] The method may further comprise, at 1104, planarizing the workpiece carrier using a planarization tool. For example, at 1104, the method may comprise, at least a portion of the workpiece carrier using a planarization tool.

[0133] The method may further comprise, at 1106, disposing one or more workpieces over the workpiece carrier after planarizing the at least one portion of the workpiece carrier.

[0134] The method may further comprise, at 1108, planarizing one or more workpieces using the planarization tool. For example, at 1108, the method may comprise, at least a portion of the workpiece or each workpiece using the planarization tool.

[0135] The workpiece carrier may be configured as described herein. The mechanical hardness of at least one portion of the workpiece carrier may be lower than a support bracket of the chuck that receives the workpiece carrier.

[0136] According to various embodiments, the mechanical hardness of the at least one portion of the workpiece carrier may be in a range of about 20% to about 500% of the mechanical hardness of at least one portion of the workpiece or each workpiece (e.g., a sacrificial workpiece region), e.g., in a range of about 50% to about 200% of the mechanical hardness of the at least one portion of the workpiece or each workpiece. Alternatively or additionally, the mechanical hardness of the at least one portion of the workpiece carrier may be less than (e.g., about 75%, about 50%, about 25%, about 10%, about 5%, or about 2%) a mechanical hardness of at least one of a nickel-based alloy (e.g., produced by chemical nickel plating), e.g., a nickel-phosphorus alloy, and an iron-based alloy, e.g., steel.

[0137] The at least a portion of the workpiece or each workpiece may be planarized using the planarization tool.

[0138] Optionally, the method may comprise planarizing the at least one portion of the workpiece carrier using the planarization tool.

[0139] As an example, the at least one portion (of at least one of: the workpiece or each workpiece and the workpiece carrier) may comprise or be formed from a polymer.

[0140] According to various embodiments, the more than one workpiece 106 may comprise a plurality of workpieces 106, e.g., more than about 10 workpieces, e.g., more than about 100 workpieces, e.g., more than about 1000 workpieces. According to various embodiments, the plurality of workpieces 106 may be planarized sequentially (in other words, one after the other) using the workpiece planarization assembly. According to various embodiments, the planarization of the workpiece or workpieces 106 may be performed between a first planarization of the workpiece carrier and a second planarization of the workpiece carrier. According to various embodiments, the planarization of the workpiece carrier may be performed between the planarization of a first workpiece (or first plurality of workpieces) 106 and the planarization of a second workpiece (or second plurality of workpieces) 106.

[0141] Fig. 12 illustrates a method 1200 for adapting a workpiece planarization assembly according to various embodiments in a schematic flow diagram. The workpiece planarization assembly may include a chuck and a planarization tool, e.g., configured as described herein.

[0142] The chuck may comprise or be formed from a support carrier and a workpiece carrier replaceably mounted on the support carrier. The mechanical hardness of the workpiece carrier may be less than (e.g., approximately 75%, approximately 50%, approximately 25%, approximately 10%, approximately 5%, or approximately 2%) the mechanical hardness of the support carrier.

[0143] According to various embodiments, the method at 1202 may include: exchanging (e.g., at least one of attaching and detaching) the workpiece carrier of the chuck (e.g., to or from the support carrier).

[0144] The method may further comprise, at 1202, planarizing the workpiece carrier using the planarization tool. For example, the method may comprise planarizing at least a portion of the workpiece carrier using the planarization tool.

[0145] The method may optionally comprise: arranging one or more workpieces over the workpiece carrier after planarization of the workpiece carrier.

[0146] The method may optionally comprise planarizing one or more workpieces using the planarization tool. For example, the method may comprise planarizing at least a portion of the workpiece or each workpiece using the planarization tool, e.g., each of the more than one workpiece.

[0147] According to various embodiments, the mechanical hardness of the at least one portion of the workpiece carrier may be in a range of about 20% to about 500% of the mechanical hardness of at least one portion of the workpiece or each workpiece (e.g., a sacrificial layer of the workpiece or each workpiece), e.g., in a range of about 50% to about 200% of the mechanical hardness of the at least one portion of the workpiece or each workpiece. Alternatively or additionally, the mechanical hardness of the at least one portion of the workpiece carrier may be less than (e.g., about 75%, about 50%, about 25%, about 10%, about 5%, or about 2%) a mechanical hardness of at least one of a nickel-based alloy (e.g., produced by chemical nickel plating), e.g., a nickel-phosphorus alloy, and an iron-based alloy, e.g., steel.

[0148] The (e.g., at least a portion of) one or more workpieces (e.g., the workpiece or each workpiece) may be planarized using the planarization tool.

[0149] Optionally, the method may comprise planarizing the (e.g., at least a portion of) the workpiece carrier using the planarization tool.

[0150] As an example, the at least one portion (of at least one of the workpiece or each workpiece and the workpiece carrier) may comprise or be formed from a polymer.

[0151] Fig. 13A illustrates a workpiece planarization arrangement 1300 according to various embodiments in a schematic cross-sectional view or top view (e.g., view along direction 101) with one or more workpieces 106 and Fig. 13B shows the workpiece planarization assembly 1300 without the workpiece 106 in the same view.

[0152] According to various embodiments, the workpiece planarization assembly 1300 may include a chuck 102 and a planarization tool 104. The planarization tool 104 may be configured to planarize the chuck 102 (without the one or more workpieces 106) and to planarize one or more workpieces 106 on the chuck 102. For example, planarizing the chuck 102 (also referred to as self-planarization) may adjust the chuck 102 to planarize the one or more workpieces 106.

[0153] According to various embodiments, a hardness of a portion 102p of the (planarized or to be planarized) chuck 102 may be configured such that planarizing the portion 102p of the (planarized or to be planarized) chuck 102 and planarizing a portion 106f to be planarized of the one or more workpieces 106 (in other words, the workpiece or each workpiece 106) use the planarizing tool 104 in at least one of the same physical configuration and the same cutting-edge configuration (in other words, in a first cutting-edge configuration for planarizing the one or more workpieces and a second cutting-edge configuration for planarizing the at least one portion of the chuck, wherein the first cutting-edge configuration and the second cutting-edge configuration are the same).

[0154] In the same physical configuration, it can be understood that the physical configuration of the planarization tool 104 is not necessarily changed between the planarization of the one or more workpieces 106 and the planarization of the chuck 102. For example, the planarization tool 104 may be mounted in at least one of the same position and orientation with respect to the chuck 102.

[0155] The same cutting part configuration can be understood to mean that the same cutting part 104b is used, for example, in the same physical configuration. For example, the (e.g., one and the same) cutting part 104b can be mounted in at least one of the same position and orientation with respect to the chuck 102. Alternatively or additionally, the cutting part 104b can be mounted in at least one of the same position and orientation in the cutting part base 104h.

[0156] For example, planarizing the chuck 102 (e.g., its workpiece support 102s) may use the same conditions (e.g., at least one of mechanical and thermal) as planarizing the one or more workpieces 106 (in other words, the workpiece or each workpiece 106). For example, planarizing the chuck 102 (e.g., its workpiece support 102s) and planarizing the one or more workpieces 106 may use the same conditions (e.g., at least one of mechanical and thermal) as the one or more workpieces 106. For example, planarizing the chuck 102 (e.g., its workpiece support 102s) and planarizing the one or more workpieces 106 may use the same conditions (e.g., at least one of the following parameters): rotational speed 101r of the planarizing tool 104 (e.g., its cutting part 104b), speed of the second displacement 103d, rotational speed of the cutting part 104b, and contact pressure between the chuck 102 and the planarizing tool 104 (e.g., its cutting part 104b). Alternatively, at least one of the above parameters may be different between the planarization of the one or more workpieces 106 and the chuck 102.For example, the planarization of the chuck 102 (e.g., its workpiece carrier 102s) and the planarization of the one or more workpieces 106 may differ in at least one of the following parameters (e.g., by less than about 90%, e.g., by less than 75%, e.g., by less than 50%, e.g., by less than 25%): rotational speed 101r of the planarization tool 104 (e.g., its cutting part 104b), speed of the second displacement 103d (also referred to as displacement speed), rotational speed of the cutting part 104b, and contact pressure between the chuck 102 and the planarization tool 104 (e.g., its cutting part 104b).

[0157] According to various embodiments, the speed of the second displacement 103d for planarizing the chuck 102 (e.g., its workpiece carrier 102s) and for planarizing the one or more workpieces 106 may be more than about 0.1 mm / s, e.g., more than about 0.2 mm / s, e.g., more than about 0.3 mm / s, e.g., more than about 0.4 mm / s, e.g., more than about 0.5 mm / s, e.g., more than about 0.75 mm / s, e.g., more than or equal to about 1 mm / s (e.g., in the range of about 1 mm / s to about 2 mm / s), e.g., more than or equal to about 2 mm / s, e.g., more than or equal to about 5 mm / s.

[0158] According to various embodiments, the speed of at least one of the rotation 101r of the planarization tool 104 and revolution of the cutting cutting part 104b for planarizing the chuck 102 (e.g., its workpiece carrier 102s) and planarizing the one or more workpieces 106 may be more than about 500 rounds per minute (also referred to as revolutions per minute or rotations per minute), e.g., more than about 1000 rounds per minute, e.g., more than about or equal to 1500 rounds per minute, e.g., more than about 2000 rounds per minute, e.g., more than about or equal to 2200 rounds per minute.

[0159] According to various embodiments, the mechanical hardness of the portion 102p of the (planarized or to be planarized) chuck 102 may be less than (e.g., about 75%, about 50%, about 25%, about 10%, about 5%, or about 2%) at least one of: five times (500%) the mechanical hardness of the (planarized or to be planarized) portion 106f of the one or more workpieces 106 (e.g., the sacrificial layer 106f), and a mechanical hardness of at least one of a nickel-based alloy, e.g., a nickel-phosphorus alloy, and an iron-based alloy, e.g., steel.

[0160] As an example, the chuck 102 may comprise or be formed from a polymer.

[0161] According to various embodiments, the workpiece planarization assembly 1300 may include a sensor configured to sense a total thickness variation of the planarized workpiece 106. Self-planarization may be initiated when the total thickness variation meets a predetermined criterion (e.g., exceeds a predetermined value), e.g., automatically. Therefore, the workpiece planarization assembly 1300 may include a controller configured to compare the total thickness variation with the predetermined criterion and configured to initiate self-planarization when the total thickness variation meets the predetermined criterion. Alternatively or additionally, the workpiece planarization assembly 1300 may include a switch configured to initiate self-planarization when the switch is pressed.

[0162] During self-planarization, the workpiece planarization assembly 1300 may be in a workpiece planarization configuration in which the planarization tool 104 is configured to planarize one or more workpieces 106 on the chuck 102. In other words, the at least one portion 102p of the chuck 102 may be planarized by the planarization tool in the workpiece planarization configuration.

[0163] In an alternative embodiment, the chuck 102 may be rotatable about a rotational axis alternatively or in addition to the rotatable cutting part 104b.

[0164] In one or more embodiments, the chuck 102 may be made of a polymer.

[0165] Fig. 14 illustrates a method 1400 for planarizing one or more workpieces according to various embodiments in a schematic flow diagram. The workpiece planarization assembly may include a chuck and a planarization tool, e.g., configured as described herein.

[0166] According to various embodiments, the method may include, at 1402, planarizing (at least a portion of) a workpiece carrier using a planarization tool.

[0167] The method may further comprise at 1404: placing one or more workpieces over the workpiece carrier after planarizing the workpiece carrier.

[0168] The method may further comprise at 1406: planarizing (e.g., at least a portion) of the one or more workpieces using the planarization tool.

[0169] According to various embodiments, a hardness of the workpiece carrier (e.g., the at least one portion thereof, e.g., planarized or to be planarized) may be configured such that the planarization of the workpiece carrier (e.g., the at least one portion thereof) and the planarization of one or more workpieces (e.g., the at least one portion thereof, e.g., planarized or to be planarized) use the planarization tool in at least one of the same physical configuration (e.g., without modification or reconfiguration) and the same cutting part (e.g., in the same configuration, in other words, without modification or reconfiguration). This may allow the two planarizations to be adapted to each other.

[0170] Alternatively or additionally, a hardness of the workpiece carrier (e.g., the at least one portion thereof, e.g., planarized or to be planarized) may be configured such that the planarizing of the workpiece carrier (e.g., the at least one portion thereof, e.g., planarized or to be planarized) and the planarizing of the one or more workpieces (e.g., the at least one portion thereof) utilize at least one of the same physical configuration between the workpiece carrier and the planarizing tool (e.g., for adjusting the planarized carrier surface and the planarized workpiece surface to each other) and the same machining cutting part.

[0171] Fig. 15 illustrates a method 1500 for planarizing one or more workpieces according to various embodiments in a schematic flow diagram. The workpiece planarization assembly may include a chuck and a planarization tool, e.g., configured as described herein.

[0172] The method may include, at 1502, planarizing a workpiece carrier using a planarization tool.

[0173] The method may further comprise at 1504: placing one or more workpieces over the workpiece carrier after planarizing the workpiece carrier.

[0174] The method may further comprise at 1506: planarizing one or more workpieces using the planarization tool to form a planarized workpiece surface of the one or more workpieces.

[0175] According to various embodiments, a hardness of the workpiece carrier (e.g., the at least one portion thereof, e.g., planarized or to be planarized) may be configured such that planarizing the workpiece carrier (e.g., the at least one portion thereof) and planarizing the one or more workpieces (e.g., the at least one portion thereof, e.g., planarized or to be planarized) use the same physical configuration of at least one of the planarizing tool and the cutting part (e.g., the same cutting part).

[0176] Alternatively or additionally, a hardness of the workpiece carrier (e.g., the at least one portion thereof, e.g., planarized or to be planarized) may be configured such that the planarization of the workpiece carrier (e.g., the at least one portion thereof) and the planarization of the one or more workpieces (e.g., the at least one portion thereof, e.g., planarized or to be planarized) use the same physical configuration of at least one of the workpiece carrier and the planarization tool and the cutting part (e.g., for aligning a planarized carrier surface and the planarized workpiece surface).

[0177] Fig. 16 illustrates a method 1600 for setting up a workpiece planarization assembly according to various embodiments in a schematic flow diagram. The workpiece planarization assembly may include a chuck and a planarization tool, e.g., configured as described herein.

[0178] The chuck may comprise or be formed from a support carrier and a workpiece carrier replaceably attached to the support carrier. A mechanical hardness of the workpiece carrier (e.g., of at least a portion thereof, e.g., planarized or to be planarized) is less than (e.g., approximately 75%, approximately 50%, approximately 25%, approximately 10%, approximately 5%, or approximately 2%) a mechanical hardness of the support carrier.

[0179] The method may include, at 1602, providing a workpiece planarization configuration of the planarization tool (e.g., its cutting edge) in which the planarization tool is configured to planarize one or more workpieces on the workpiece support.

[0180] The method may further comprise at 1604: planarizing the workpiece carrier (e.g., at least a portion thereof) by the planarization tool in the workpiece planarization configuration.

[0181] Fig. 17A shows a replaceable workpiece carrier 1700 (e.g., for a chuck) or a non-replaceable workpiece carrier 1700 of a chuck according to various embodiments in a perspective view and Fig. 17B shows the workpiece carrier 1700 in a detailed view.

[0182] The workpiece carrier 1700 may include a plurality of support projections 704 disposed in the recess of each adhesion region of the plurality of adhesion regions 602a, 602b.

[0183] According to various embodiments, a polymer workpiece carrier 1700 may be provided compared to a conventional chuck. The workpiece carrier 1700 may be structured on the second side 800b to provide at least two adhesion regions 602a, 602b (also referred to as vacuum regions). For example, the smaller adhesion regions 602b may have a diameter of approximately 8 inches, and the larger adhesion regions 602a may have a diameter of approximately 12 inches.

[0184] The replaceable workpiece carrier 1700 and the non-replaceable workpiece carrier 1700 may enable the chuck to be planarized without changing the configuration of the planarization tool 104 (at least one of thermal and mechanical). The replaceable workpiece carrier 1700 may be a consumable part, e.g., configured to be manufactured at low cost and replaced (e.g., when it is consumed or irreversibly contaminated).

[0185] According to various embodiments, a total thickness variation may be monitored (e.g., detected by sensors). Self-planarization may be initiated when the total thickness variation meets a predetermined criterion (e.g., exceeds a predetermined value).

[0186] Fig. 18 illustrates a chuck 1800 with a non-replaceable workpiece carrier 102s according to various embodiments in a schematic cross-sectional view or side view. The non-replaceable workpiece carrier 102s may be configured similarly to the replaceable workpiece carrier described herein.

[0187] According to various embodiments, the chuck 1800 (e.g., at least one portion 102p of the chuck 1800) may include or be formed from sacrificial material. The sacrificial material may be configured to provide mechanical hardness to the at least one portion 102p of the chuck 1800 configured as follows.

[0188] The mechanical hardness of the at least one portion 102p of the (planarized or to be planarized) chuck 1800, e.g., the complete chuck 1800, may be in a range of about 20% to about 500% of the mechanical hardness of the at least one portion of the one or more (planarized or to be planarized) workpieces, e.g., in a range of about 50% to about 200% of the mechanical hardness of the at least one portion of the one or more workpieces.

[0189] Alternatively or additionally, the mechanical hardness of the at least one portion 102p of the (planarized or to be planarized) chuck 1800, e.g., the complete chuck 1800, may be less than (e.g., about 75%, about 50%, about 25%, about 10%, about 5%, or about 2%) of at least one of a mechanical hardness of at least one of a nickel-based alloy, e.g., a nickel-phosphorus alloy, and an iron-based alloy, e.g., steel (in other words, the nickel-based alloy and / or the iron-based alloy).

[0190] Fig. 19 illustrates a method 1900 for thinning a wafer according to various embodiments in a schematic cross-sectional view or side view.

[0191] According to various embodiments, the method may include, at 1902, providing a wafer 106w including a plurality of integrated circuits 106c. The wafer 106w may comprise or be formed from a semiconductor material, e.g., comprise or be formed from silicon. Each integrated circuit of the plurality of integrated circuits 106c may be electrically contacted by at least two (e.g., two or three) contact polishing pads.

[0192] The method may further comprise, at 1904, coupling the wafer 106w and a stabilization layer 106s, e.g., a glass carrier. Coupling the wafer 106w may comprise adhering the wafer 106w to the stabilization layer 106s using an adhesion layer 106a.

[0193] The method may further comprise, at 1906, disposing a sacrificial layer 106f (e.g., a self-adhesive tape) over the stabilization layer 106s. The sacrificial layer 106f may comprise or be formed from a sacrificial material (e.g., a polymer). The sacrificial material may be configured such that the sacrificial layer 106f has a first mechanical hardness. The first mechanical hardness may be less than (e.g., about 75%, about 50%, about 25%, about 10%, about 5%, or about 2%) a mechanical hardness of at least one of a nickel-based alloy (e.g., produced by electroless nickel plating), e.g., a nickel-phosphorus alloy, and an iron-based alloy, e.g., steel.

[0194] The method may further comprise, at 1908, planarizing the sacrificial layer 106f, e.g., by subtractive manufacturing (e.g., comprising at least one of cutting and machining). By planarizing the sacrificial layer 106f, a planarized surface 106p may be formed. The planarized surface 106p may be plane-parallel to a back surface 106b of the wafer opposite the sacrificial layer 106f.

[0195] According to various embodiments, the planarization package 106f, 106s, 106a, 106w (including at least one of the sacrificial layer 106f, the stabilization layer 106s, the adhesion layer 106a, and the wafer 106w) may be one or more workpieces 106.

[0196] The method may further comprise, at 1910, thinning the wafer 106w. Thinning the wafer 106w may comprise removing material from the wafer 106w (from the back surface 106b), e.g., by subtractive manufacturing (e.g., including grinding). For example, thinning the wafer 106w may comprise forming a recess in the wafer or formed therefrom. Optionally, thinning the wafer 106w may comprise forming at least one of a recess 116r and a protruding edge 106r (sometimes referred to as a Taiko ring).

[0197] After thinning the wafer 106w, a thickness variation of the wafer 106w between two integrated circuits of the plurality of integrated circuits 106c (arranged at maximum distance from each other, e.g., diametrically) may be less than about 1 µm, e.g., less than about 0.5 µm, less than about 0.2 µm.

[0198] In various embodiments, thinning the wafer 106w may include thinning at least a portion of the wafer 106w (in other words, partially or completely thinning the wafer 106w).

[0199] Fig. 20 illustrates a method 2000 of planarizing the chuck (e.g., its workpiece carrier 102s) according to various embodiments in a schematic cross-sectional view or side view.

[0200] According to various embodiments, the method may comprise at 2002: providing at least one section 102p of a chuck 102 (e.g., its workpiece carrier 102s) for planarization. The at least one section 102p to be planarized may deviate from a predefined plane 2001, e.g., by at least about 0.1 µm, e.g., by at least about 0.2 µm, e.g., by at least about 0.5 µm, e.g., by at least about 1 µm, e.g., by at least about 2 µm, e.g., by at least about 3 µm, e.g., by at least about 4 µm, e.g., by at least about 5 µm, e.g., by at least about 6 µm, e.g., by at least about 7 µm, e.g., by at least about 8 µm, e.g., by at least about 9 µm, e.g., by at least about 10 µm. For example, the at least one section 102p may be contaminated by a particle 2003. Alternatively or additionally, the at least one section 102p may have or be formed from an uneven surface (e.g., provided by the support projections 704).

[0201] The plane 2001 may be predefined by the planarization tool 104. In one or more embodiments, the predefined plane 2001 may deviate from a mathematically planar plane (e.g., due to physical tolerances). The predefined plane 2001 may be plane-parallel (or at least substantially plane-parallel) to the planarization plane defined by the planarization tool 104. For example, the predefined plane 2001 may be perpendicular to the rotation axis 101a (see Fig. 2). Alternatively or additionally, the predefined plane 2001 may be parallel (or at least substantially parallel) to at least one of the second displacements 103d (see Fig. 2). In various embodiments, the predefined plane 2001 may be parallel (or at least substantially parallel) to the direction 103 and direction 105 (see Fig. 2) be.

[0202] The method may further comprise, at 2004, planarizing the at least one portion 102p, e.g., by a planarizing tool 104. Planarizing the at least one portion 102p may comprise subtractively manufacturing the at least one portion 102p, e.g., using a machining cutting part 104b. The machining cutting part 104b may be moved over the at least one portion 102p, e.g., by rotation 101r of the cutting part carrier 104c.

[0203] The method may further comprise, at 2006, forming at least one planarized section 102p' by planarizing 2004 the at least one section 102p. The at least one planarized section 102p' may be substantially plane-parallel to the predefined plane 2001, ie, the at least one planarized section 102p' may deviate from the predefined plane 2001 by less than the at least one section 102p (prior to planarizing 2004), e.g., by less than or equal to about 2 µm, e.g., by less than about 1 µm, e.g., less than about 0.5 µm, less than about 0.2 µm. The deviation can be understood as measured over a lateral extension of the predefined plane 2001, e.g. over more than or equal to about 100 mm, e.g. over more than or equal to about 200 mm, e.g. over more than or equal to about 300 mm.

[0204] As an example, the deviation of the at least one planarized portion 102p' from the predefined plane 2001 may be less than about 2 µm (e.g., over more than or equal to about 300 mm).

[0205] After thinning the wafer 106w, the sacrificial layer 106f may be removed, and optionally, at least one of the stabilization layer 106s and the adhesion layer 106a may be removed, if present. The integrated circuits 106c may be further processed (e.g., with the third layer 106a on top), e.g., singulated.

[0206] Fig. 21A illustrates a workpiece carrier 2100 according to various embodiments in a perspective view and Fig. 21B shows the workpiece carrier 2100 in a detailed view.

[0207] The workpiece carrier 2100 may comprise or be formed from a synthetic polymer, e.g., at least one of a thermoplastic and an elastomer.

[0208] The workpiece carrier 2100 may include or be formed from more than two adhesion regions 602a, 602b, 602c. Each adhesion region of the more than two adhesion regions 602a, 602b, 602c may include a circular recess 414r (e.g., in the form of a groove).

[0209] Fig. 22A illustrates a planarization arrangement 2200 according to various embodiments in a top view (e.g., onto the second side 800b) and a corresponding cross-sectional view 2101 and side view 2203, wherein Fig. 22B shows the chuck base 2202 in plan view without chuck 102.

[0210] The planarization assembly 2200 may include a chuck base 2202. The chuck base 2202 may include an opening 2202o. The chuck 102 (e.g., its support bracket 102c) may include one or more vacuum ports 412 (e.g., in a supply port). The one or more vacuum ports 412 may be coupled to the at least one vacuum line 402 of the chuck 102. The chuck 102 (e.g., its support bracket 102c) may include a first mounting structure 102f configured to attach the chuck 102 to the chuck base 2202, e.g., to a corresponding second mounting structure 2202f of the chuck base 2202. For example, the chuck 102 may be attached to the chuck base 2202 by screws.

[0211] The opening 2202o of the chuck base 2202 may expose at least a portion of the first side 800a of the chuck 102 (e.g., its support beam 102c), e.g., at least the supply port 502. For example, the opening 2202o of the fixture base 2202 may expose the one or more vacuum ports 412 of the chuck 102. The opening 2202o of the fixture base 2202 may extend through the chuck base 2202, e.g., from a first side 800a of the chuck base 2202 to a second side 800b of the chuck base 2202 opposite the first side 800a.

[0212] Fig. 23A to Fig. 23C illustrate a workpiece carrier 102s in a method for planarizing the workpiece carrier 102s according to various embodiments in a schematic cross-sectional view or side view.

[0213] Methods 2300a through 2300b may be applied to the workpiece carrier 102s (e.g., its carrier stabilization region 802) without the support carrier 102c (e.g., which is absent), e.g., to the workpiece carrier 102s that is disassembled (e.g., detached) from the support carrier 102c (e.g., when the workpiece carrier 102s is configured to be replaceably mounted to the support carrier 102c). Alternatively, the methods 2300a through 2300b may be applied to the entire chuck 102 (e.g., when the workpiece carrier 102s is not configured to be replaceably mounted to the support carrier 102c, or when the workpiece carrier 102 remains mounted to the support carrier 102c).

[0214] According to various embodiments, the method at 2300b may include: providing at least one portion 102p of the workpiece carrier 102s to be planarized. For example, the workpiece carrier 102s can be provided unassembled from the support carrier 102c or mounted on the support carrier 102c, e.g. as part of the chuck 102 to be planarized. The at least one section 102p to be planarized can, for example, deviate from a predefined plane 2001, e.g. by at least about 0.1 µm, e.g. by at least about 0.2 µm, e.g. by at least about 0.5 µm, e.g. by at least about 1 µm, e.g. by at least about 2 µm, e.g. by at least about 3 µm, e.g. by at least about 4 µm, e.g. by at least about 5 µm, e.g. by at least about 6 µm, e.g. by at least about 7 µm, e.g. by at least about 8 µm, e.g. by at least about 9 µm, e.g. by at least about 10 µm. For example, the at least one section 102p may be contaminated, e.g. by a particle 2003.Alternatively or additionally, the at least one portion 102p may have or be formed from an uneven surface (e.g., provided by the support projections 704).

[0215] The plane 2001 may be predefined by the planarization tool 104, as previously described. In one or more embodiments, the predefined plane 2001 may deviate from a mathematically planar plane (e.g., due to physical tolerances). The predefined plane 2001 may be plane-parallel (or at least substantially plane-parallel) to the planarization plane(s) defined by the planarization tool 104. For example, the predefined plane 2001 may be perpendicular to the rotation axis 101a (see Fig. 2). Alternatively or additionally, the predefined plane 2001 may be parallel (or at least substantially parallel) to at least one of the second displacements 103d (see Fig. 2). In various embodiments, the predefined plane 2001 may be parallel (or at least substantially parallel) to the direction 103 and the direction 105 (see Fig. 2).

[0216] The method may further comprise, in 2300c, planarizing the at least one portion 102p, e.g., by a planarization tool 104. Planarizing the at least one portion 102p may comprise subtractive fabrication of the at least one portion 102p, e.g., using a machining cutting part 104b. The machining cutting part 104b may move over the at least one portion 102p, e.g., by rotating 101r the cutting part carrier 104c.

[0217] The method may further comprise, in 2300c, forming at least one planarized section 102p' by planarizing the at least one section 102p. The at least one planarized section 102p' may be substantially plane-parallel to the predefined plane 2001, e.g., the at least one planarized section 102p' may deviate from the predefined plane 2001 by less than the at least one section 102p (prior to planarization 2004), e.g., by less than or equal to about 2 µm, e.g., by less than about 1 µm, e.g., less than about 0.5 µm, less than about 0.2 µm. The deviation can be understood as measured over a lateral extension of the predefined plane 2001, e.g. over more than or equal to about 100 mm, e.g. over more than or equal to about 200 mm, e.g. over more than or equal to about 300 mm.

[0218] As an example, the deviation of the at least one planarized portion 102p' from the predefined plane 2001 may be less than about 2 µm (e.g., over more than or equal to about 300 mm).

[0219] The method may optionally include, in 2300a, e.g., prior to 2300b, providing a workpiece carrier 102s (e.g., its carrier stabilization region 802), e.g., as part of the chuck 102 or disassembled from the support carrier 102c. The workpiece carrier 102s, e.g., its carrier stabilization region 802, may optionally include one or more support projections 704 and / or one or more recesses 414r.

[0220] According to various embodiments, the planarization of the at least one portion 102p may not penetrate through the at least one portion 102p, ie, may not expose the carrier stabilization region 802 and / or the one or more support protrusions 704.

[0221] The method may optionally comprise, in 2300b, forming and / or reinforcing the sacrificial support region 102p, e.g., by adding material (also referred to as sacrificial material) to the sacrificial support region 102p and / or to the workpiece carrier 102s, e.g., its carrier stabilization region 802. For example, reinforcing the sacrificial support region 102p may be applied at least once after planarizing the at least one portion 102p, or if a thickness of the sacrificial support region 102p (extension parallel to the rotation axis 101a, e.g., measured at the one or more support protrusions 704) is possibly less than about 100 µm, e.g., possibly less than about 10 µm, e.g., possibly less than about 1 µm.

[0222] In general, the sacrificial material may be deposited dry (e.g., as a solid sacrificial material without any further viscous material) or wet (e.g., as a viscous sacrificial material or together with a viscous, e.g., liquid, material). Deposition of the sacrificial material may, for example, comprise physical (e.g., vapor, liquid, or solid) deposition, dip coating, sol-gel coating, spin coating, evaporation, and / or be free of plating. For example, the sacrificial material may be deposited (e.g., coated) in the form of particles on the carrier stabilization region 802 and / or to form the at least one sacrificial layer 102l, e.g., one or more sacrificial layers 102l. In addition or alternatively to particle deposition, the sacrificial material may be deposited in the form of a viscous material that is solidified after deposition and / or may be deposited in the form of a solid film.

[0223] For example, the sacrificial support region 102p may be reinforced or formed by exposing the workpiece carrier 102s, e.g., its carrier stabilization region 802, to an aerosol (also referred to as aerosol deposition or aerosol deposition). For example, the aerosol may be emitted (e.g., sprayed, e.g., spray-coated) to or onto the workpiece carrier 102s, e.g., its carrier stabilization region 802. The aerosol may comprise or be formed from a colloid of (e.g., solid and / or viscous, e.g., liquid) particles (e.g., with a diameter of less than one micrometer) in air or another gas. For example, the particles comprise or are formed from viscous (e.g., liquid) droplets or a solid-state powder. For example, exposing the workpiece carrier 102s, e.g., its carrier stabilization region 802, to the aerosol may comprise aerosol spraying, atomization (e.g.,through a nozzle), atomization, electrospraying and / or vibratory aerosol generation.

[0224] In general, the particles may be deposited dry (e.g., as solid particles, e.g., as a powder, without any further viscous material) or wet (e.g., as viscous particles or together with a viscous, e.g., liquid, material). For example, the particles may be aerosol-deposited (e.g., coated) on the support stabilization region 802 and / or form at least one sacrificial layer 102l, e.g., one or more sacrificial layers 102l, of the sacrificial support region 102p and / or on the support stabilization region 802. Additionally or alternatively, the particles may be deposited in other ways, e.g., from a suspension (e.g., a gel or paste) and / or using dipping, smearing, or spinning, or the like.

[0225] Optionally, the particles and / or the at least one sacrificial layer 102l may be adhered to the carrier stabilization region 802, e.g., by an adhesion material (e.g., a viscous, e.g., liquid, adhesion material), e.g., deposited from the aerosol (e.g., in the case of wet aerosol deposition) or as part of a corresponding adhesion layer (e.g., comprising pre-deposited adhesion material) formed prior to exposure to the aerosol (e.g., in the case of dry aerosol deposition). The adhesion material may be deposited in solid (e.g., in the form of particles) or viscous (e.g., liquid) form.

[0226] Optionally, the particles and / or the at least one sacrificial layer 102l can be heated, e.g., during or after they are / were exposed to the aerosol. Heating the particles (e.g., a deposited and / or dry-deposited powder) and / or the at least one sacrificial layer 102l can, for example, comprise at least partial melting of the particles and / or the at least one sacrificial layer 102l, e.g., in the case that a polymer or a metal that melts at low temperature, e.g., lead and indium, is included. Additionally or alternatively, a viscous material (e.g., the adhesive material and / or viscous particles) can be solidified by or after heating. For example, the adhesive material can form (by heating) a matrix (e.g., a polymer matrix) in which the particles are embedded and / or can form a porous layer containing the particles.

[0227] In addition or alternatively to melting, the particles (e.g., a deposited and / or dry-deposited powder) and / or the at least one sacrificial layer 102l may be sintered (by heating), e.g., in case a metal that melts at a high temperature, e.g., such as silver, aluminum, copper, and gold, is included. After sintering and / or melting (in the case of particles, also referred to as densification), pores may remain in the at least one sacrificial layer 102l, indicating the manufacturing process (e.g., the heating and / or densification). For example, a porosity of the at least one sacrificial layer 102l may be greater than a porosity (if present) of the carrier stabilization region 802.

[0228] In addition or alternatively to aerosol deposition, the particles and / or the at least one sacrificial layer 102l can be at least partially cast. In addition or alternatively to aerosol deposition, the at least one sacrificial layer 102l can be formed from at least one film, e.g., by laminating the at least one film onto the workpiece carrier 102s (e.g., its carrier stabilization region 802). In addition or alternatively to aerosol deposition, the at least one sacrificial layer 102l can be formed by pressing the film (e.g., comprising or formed from a polymer) and / or the particles onto the workpiece carrier 102s (e.g., its carrier stabilization region 802) and, if appropriate, sintering or melting the particles.

[0229] The workpiece carrier 102s (e.g., its carrier stabilization region 802) may, for example, comprise or be formed from a material having a low thermal expansion coefficient, e.g., Invar, Super-Invar, a ceramic, and / or a glass (e.g., a glass-ceramic, also referred to as Ceran). For example, the thermal expansion coefficient of the workpiece carrier 102s (e.g., its carrier stabilization region 802) may be less than approximately 20·10 -6 K -1 , e.g. smaller than about 10·10 -6 K -1 , e.g. smaller than about 5·10 -6 K -1 , e.g. less than about 2·10 -6 K -1 .

[0230] According to various embodiments, the particles and / or the at least one sacrificial layer 102l may comprise or be formed from a polymer (e.g., organic or inorganic), e.g., at least one of a synthetic rubber, a resin (e.g., epoxy, phenol-formaldehyde resin, or Bakelite), neoprene, nylon, polyvinyl chloride (PVC or vinyl), polystyrene, polyethylene (e.g., polyethylene terephthalate, also referred to as PET), polypropylene, polyacrylonitrile, PVB, silicone, or the like. Alternatively or additionally, the particles and / or the at least one sacrificial layer 102l may comprise or be formed from a metallic material, e.g., having a Mohs hardness of less than about 4, e.g., less than about 3, e.g., less than about 2.5, e.g., less than about 2, e.g., less than about 1.5, e.g., less than about 1.For example, the metallic material of the particles and / or the at least one sacrificial layer 102l may comprise at least one of the following metals: lead, indium, silver, aluminum, copper and gold.

[0231] According to various embodiments, the particles and / or the at least one sacrificial layer 102l may be arranged (e.g., coated) on the (e.g., all) protrusions 704 and / or in the (e.g., all) recesses 414r of the workpiece carrier 102s, e.g., forming a continuous coating. For example, the particles and / or the at least one sacrificial layer 102l may cover more than approximately 50% of the second side 800b and / or the carrier stabilization region 802, e.g., more than approximately 75%, e.g., more than approximately 90%.

[0232] The method may optionally comprise, in 2300a, e.g., as part of providing the workpiece carrier 102s, removing the at least one planarized portion 102p' or cleaning the carrier stabilization region 802, e.g., prior to 2300b. For example, the method may optionally comprise, in 2300a, removing the at least one sacrificial layer 102l (e.g., after planarization). The removal or cleaning may comprise etching (e.g., wet etching) and / or heating the workpiece carrier 102s. Heating the workpiece carrier 102s may, for example, comprise ashing or evaporating the at least one sacrificial layer 102l (also referred to as sacrificial coating 102l).

[0233] Furthermore, various embodiments are described below.

[0234] According to various embodiments, a workpiece planarization assembly may comprise: a chuck having: a support carrier (e.g., including a supply port for workpiece adhesion supply); and a workpiece carrier replaceably attached to the support carrier; and a planarization tool configured to planarize the at least one portion of the workpiece carrier and to planarize one or more workpieces on the at least one portion of the workpiece carrier, e.g., on the chuck (e.g., for adjusting the chuck by self-planarization).

[0235] According to various embodiments, a mechanical hardness of the at least one portion of the workpiece carrier may be lower than a mechanical hardness of the support carrier.

[0236] According to various embodiments, a workpiece planarization arrangement may comprise: a chuck having: a support carrier (e.g., including a supply connection for workpiece adhesive supply); and a workpiece carrier replaceably attached to the support carrier; wherein a mechanical hardness of the at least one portion of the workpiece carrier is less than a mechanical hardness of the support carrier; and a planarization tool configured to planarize the at least one portion of the workpiece carrier and to planarize one or more workpieces on the at least one portion of the workpiece carrier, e.g., on the chuck (e.g., for adjusting the chuck by self-planarization).

[0237] According to various embodiments, a workpiece planarization assembly may comprise: a chuck; and a planarization tool configured to planarize the chuck and to planarize one or more workpieces on the chuck (e.g., for adjusting the chuck by self-planarization); wherein a mechanical hardness of at least a portion of the chuck to be planarized is less than at least one of: five times a mechanical hardness of at least a portion of the one or more workpieces to be planarized; and a mechanical hardness of at least one of a nickel-based alloy and an iron-based alloy.

[0238] According to various embodiments, the planarization tool may be configured to planarize one or more workpieces when arranged on the chuck (e.g., placed on the chuck).

[0239] According to various embodiments, a chuck may comprise: a support carrier (e.g., including a supply connection for workpiece adhesion supply); and a workpiece carrier replaceably mounted on the support carrier; wherein a mechanical hardness of the at least one portion of the workpiece carrier is lower than a mechanical hardness of the support carrier.

[0240] According to various embodiments, a chuck may comprise: a first side configured to be attached to a chuck holder (e.g., a chuck base); a support bracket (e.g., including a supply port for workpiece clamping supply) proximate to the first side; a second side opposite the first side, the second side configured to support (e.g., opposite) one or more workpieces; and a workpiece carrier proximate to the second side (e.g., remote from the support carrier) and replaceably mounted on the support carrier.

[0241] According to various embodiments, a mechanical hardness of the at least one portion of the workpiece carrier may be lower than a mechanical hardness of the support carrier.

[0242] According to various embodiments, an interchangeable workpiece carrier (e.g., for a chuck) may comprise: a first side configured to be interchangeably mounted on a support carrier of the chuck (e.g., including a supply connection for workpiece adhesion supply); a second side opposite the first side, wherein the second side is configured to support (e.g., opposite) one or more workpieces; and at least one through-opening extending from the first side to the second side, such that one or more workpieces received via the second side are adhered by suction when a vacuum is created in the at least one through-opening; and wherein a mechanical hardness of at least a portion of the workpiece carrier close to the second side (e.g., remote from the support carrier) is lower than a mechanical hardness of at least one of a nickel-based alloy and an iron-based alloy (e.g., for adjusting the chuck by planarizing the sacrificial support region).

[0243] According to various embodiments, an interchangeable workpiece carrier (e.g., for a chuck) may comprise: a first side configured to be interchangeably attached to a support carrier of the chuck (e.g., including a supply port for workpiece adhesion supply); a second side opposite the first side, wherein the second side is configured to support (e.g., oppose) one or more workpieces; and at least one through-opening extending from the first side to the second side such that one or more workpieces received via the second side are adhered by suction when a vacuum is created in the at least one through-opening; and wherein at least a portion of the workpiece carrier proximate the second side (e.g., remote from the support carrier) comprises a polymer.

[0244] According to various embodiments, the mechanical hardness may be according to the same measurement method.

[0245] According to various embodiments, the planarization tool may comprise a cutting part carrier rotatable about a rotation axis; wherein the workpiece planarization assembly is configured to move at least one of the cutting part carrier and the chuck along a direction perpendicular to the rotation axis.

[0246] According to various embodiments, the planarization tool may comprise: a rotatable cutting part carrier; and a cutting cutting part mounted on the cutting part carrier; wherein the rotatable cutting part carrier and the chuck are configured for two-axis translation relative to each other.

[0247] According to various embodiments, a mechanical hardness of the cutting part may be greater than the mechanical hardness of at least one of the support carrier and the workpiece carrier.

[0248] According to various embodiments, the machining cutting part may comprise or be formed from carbon.

[0249] According to various embodiments, the machining cutting part may comprise or be formed from at least one of a carbide and a nitride.

[0250] According to various embodiments, a mechanical hardness of the cutting part is more than (in other words, greater than) a mechanical hardness of at least one of the chuck and the one or more workpieces. For example, the cutting part may comprise or be formed from a material hard enough to planarize the one or more workpieces and the chuck.

[0251] According to various embodiments, the machining cutting part may comprise or be formed from carbon in at least one of a carbide (e.g., a metal carbide such as tungsten carbide), a diamond configuration, or a diamond-like carbon configuration.

[0252] According to various embodiments, the machining cutting part may comprise or be formed from a ceramic.

[0253] According to various embodiments, the planarization tool may be configured to planarize at least one of the workpiece carrier and the one or more workpieces by subtractive manufacturing (including at least one of cutting and machining).

[0254] According to various embodiments, the support carrier may comprise at least one vacuum line for connection to a vacuum-generating system; wherein the workpiece carrier may comprise at least one through-opening connected to the at least one vacuum line (so that one or more workpieces are adhered to the workpiece carrier by suction force when a vacuum is generated via the at least one vacuum line).

[0255] According to various embodiments, the workpiece carrier may have a recess which is connected to the at least one through opening.

[0256] According to various embodiments, the support carrier may comprise a plurality of vacuum lines; wherein the workpiece carrier may comprise a plurality of mutually separate adhesion regions, wherein each adhesion region of the plurality of adhesion regions may comprise at least one through-opening; wherein the at least one through-opening of each adhesion region of the plurality of adhesion regions is connected to at least one vacuum line of the plurality of vacuum lines (so that the adhesion of one or more workpieces is controllable by selectively providing vacuum by means of the at least one vacuum line of the adhesion region).

[0257] According to various embodiments, the at least one adhesive region of the plurality of adhesive regions may have a recess that is connected to the at least one through-opening of the adhesive region of the plurality of adhesive regions.

[0258] According to various embodiments, the at least one portion may be remote from the support carrier; wherein the workpiece carrier may have at least one further portion (e.g., comprising or formed from a stabilization region) proximate to the support carrier (and the corresponding second side); and wherein a mechanical hardness of the at least one further portion is greater than the mechanical hardness of the at least one portion.

[0259] According to various embodiments, a support surface of the at least one portion may be configured to provide physical contact with one or more workpieces on the chuck.

[0260] According to various embodiments, the mechanical hardness may comprise or be formed from a spatially averaged mechanical hardness.

[0261] According to various embodiments, the workpiece carrier may comprise a carrier stabilization region for stabilizing the sacrificial support region, wherein the stabilization region is arranged on the second side.

[0262] According to various embodiments, the support stabilization region may be arranged between the sacrificial support region and the support support.

[0263] According to various embodiments, the at least one portion may comprise or be formed from at least one of a film (e.g., a tape), a layer (e.g., a coating), and a plate.

[0264] According to various embodiments, the at least one section may contain particles or be formed from particles and / or an aerosol.

[0265] According to various embodiments, the support carrier may have a recess for receiving the workpiece carrier.

[0266] According to various embodiments, the mechanical hardness of the at least one portion of the workpiece carrier may be lower than the mechanical hardness of at least one of a nickel-based alloy and an iron-based alloy.

[0267] According to various embodiments, the at least one portion of the workpiece carrier is proximate to a second side of the workpiece carrier configured to support one or more workpieces and / or includes one or more protrusions.

[0268] According to various embodiments, the mechanical hardness of the at least one portion of the workpiece carrier is lower than a mechanical hardness of chemically deposited nickel.

[0269] According to various embodiments, electroless nickel plating may refer to a plating process that uses a reducing agent, e.g., hydrogenated sodium hypophosphite, which reacts with the metal ions (nickel) to deposit electroless nickel. The electroless nickel may have a phosphorus concentration in the range of about 2 atomic percent (low phosphorus) to about 14 atomic percent, e.g., in the range of about 5 atomic percent to about 11 atomic percent.

[0270] According to various embodiments, the mechanical hardness of the workpiece carrier may be lower than a mechanical hardness of at least one of a nickel-phosphorus alloy and an iron-based alloy.

[0271] According to various embodiments, the at least one portion of the workpiece carrier may comprise or be formed from a polymer.

[0272] According to various embodiments, the workpiece carrier may comprise or be formed from a polymer.

[0273] According to various embodiments, the chuck may comprise or be formed from a polymer.

[0274] According to various embodiments, the support carrier may comprise or be formed from a metallic material (with the mechanical hardness of the support carrier).

[0275] According to various embodiments, the workpiece carrier may be a plate (e.g. a disk).

[0276] According to various embodiments, the at least one portion of the workpiece carrier can protrude from the support carrier.

[0277] According to various embodiments, the at least one portion of the workpiece carrier may be configured to be subtractively manufactured to planarize the workpiece carrier.

[0278] According to various embodiments, a method for planarizing one or more workpieces may comprise: at least one of attaching and detaching a workpiece carrier of a chuck (e.g., exchanging, in other words detaching, a first workpiece carrier attachment and attaching a second workpiece carrier); planarizing the workpiece carrier using a planarization tool; arranging one or more workpieces over the workpiece carrier after planarizing the workpiece carrier; and planarizing the one or more workpieces using the planarization tool.

[0279] According to various embodiments, a method for adjusting a workpiece planarization assembly comprising a chuck and a planarization tool, wherein the chuck comprises: a support beam (e.g., including a supply port for workpiece adhesion supply); a workpiece carrier replaceably attached to the support beam; wherein the method may comprise: at least one of attaching and detaching (e.g., exchanging) the workpiece carrier of a chuck; and planarizing the workpiece carrier by the planarization tool.

[0280] According to various embodiments, a mechanical hardness of the workpiece carrier is lower than a mechanical hardness of the support carrier.

[0281] According to various embodiments, a method for adjusting a workpiece planarization assembly comprising a chuck and a planarization tool, wherein the chuck comprises: a support beam (e.g., including a supply port for workpiece adhesion supply); a workpiece carrier replaceably attached to the support beam; wherein the method may comprise: at least one of attaching and detaching (e.g., exchanging) the workpiece carrier of a chuck; and planarizing the workpiece carrier by the planarization tool.

[0282] According to various embodiments, a mechanical hardness of the workpiece carrier is lower than a mechanical hardness of the support carrier.

[0283] According to various embodiments, a method for adjusting a workpiece planarization assembly comprising a chuck and a planarization tool, wherein the chuck comprises: a support carrier (e.g., including a supply port for workpiece adhesion supply); a workpiece carrier replaceably attached to the support carrier; wherein a mechanical hardness of the workpiece carrier is less than a mechanical hardness of the support carrier, the method may comprise: at least one of attaching and detaching (e.g., exchanging) the workpiece carrier of a chuck; and planarizing the workpiece carrier by the planarization tool.

[0284] According to various embodiments, a method for planarizing one or more workpieces may comprise: planarizing at least a portion of a workpiece carrier using a planarization tool; disposing one or more workpieces over the workpiece carrier after planarizing the workpiece carrier; and planarizing at least a portion of the workpiece using the planarization tool; wherein a hardness of the at least one portion of the workpiece carrier is configured such that planarizing the workpiece carrier and planarizing the at least a portion of the one or more workpieces (in other words, the workpiece or each workpiece) use at least one of the planarization tool in the same physical configuration (e.g., without modification or reconfiguration) and the same cutting part configuration (e.g., without modification or reconfiguration).

[0285] According to various embodiments, a method for planarizing one or more workpieces may comprise: planarizing at least a portion of a workpiece support using a planarizing tool to form a planarized support surface of the workpiece support; disposing one or more workpieces over the planarized surface of the workpiece support; and planarizing at least a portion of the one or more workpieces using the planarizing tool to form a planarized workpiece surface of the one or more workpieces; wherein a hardness of the at least a portion of the workpiece support is configured such that the planarizing of the workpiece support and the planarizing of the one or more workpieces comprise at least one of the same physical configuration of the planarizing tool and the same cutting part configuration (e.g.without modification or reconfiguration).

[0286] According to various embodiments, a method for adjusting a workpiece planarization arrangement comprising a chuck and a planarization tool, wherein the chuck has a support carrier (e.g., including a supply connection for workpiece adhesive supply) and a workpiece carrier replaceably attached to the support carrier (wherein a mechanical hardness of the workpiece carrier is optionally lower than a mechanical hardness of the support carrier), may comprise: providing a workpiece planarization configuration of the planarization tool (e.g., its cutting part) in which the planarization tool is configured to planarize one or more workpieces on the workpiece carrier; and planarizing the workpiece carrier by the planarization tool in the workpiece planarization configuration.

[0287] According to various embodiments, the mechanical hardness of the at least one portion of the workpiece carrier may be in a range of about 20% to about 500% of the mechanical hardness of the at least one portion of the one or more workpieces, e.g., in a range of about 50% to about 200% of the mechanical hardness of the at least one portion of the one or more workpieces.

[0288] According to various embodiments, a relative deviation of the mechanical hardness of the at least one portion of the workpiece carrier and the mechanical hardness of the at least one portion of the one or more workpieces may be less than about 100% (e.g., less than about 75%, e.g., less than about 50%, e.g., less than about 25%, e.g., less than about 10%, e.g., less than about 5%, e.g., less than about 2%). The relative deviation of two numerical values ​​may be defined by their (positive, in other words, natural) difference from each other divided by their arithmetic mean. The arithmetic mean (also referred to as mean or average) may be defined as equal to the sum of the numerical values ​​divided by two.

[0289] According to various embodiments, the chuck support bracket is optional. In this case, the chuck can be configured similarly to the workpiece carrier.

[0290] According to various embodiments, the mechanical hardness of the at least one portion of the chuck (planarized or to be planarized) may be in a range of about 20% to about 500% of the mechanical hardness of the at least one portion of the one or more workpieces (planarized or to be planarized), e.g., in a range of about 50% to about 200% of the mechanical hardness of the at least one portion of the one or more workpieces.

[0291] According to various embodiments, the mechanical hardness of the at least one portion of the chuck (planarized or to be planarized) may be in a range of about 20% to about 500% of the mechanical hardness of the at least one portion of the one or more workpieces (planarized or to be planarized), e.g., in a range of about 50% to about 200% of the mechanical hardness of the at least one portion of the one or more workpieces.

[0292] According to various embodiments, replaceably mounted may be understood as a mount configured for non-destructive disassembly.

[0293] According to various embodiments, a workpiece planarization assembly may comprise: a chuck having at least one portion configured to support one or more workpieces and / or including one or more protrusions; and a planarization tool configured to planarize the at least one portion of the chuck and to planarize one or more workpieces on the at least one portion of the chuck, wherein a mechanical hardness of the at least one portion of the chuck is configured such that planarizing the one or more workpieces and planarizing the at least one portion of the chuck use (in other words, can be performed with) the planarization tool in the same cutting-edge configuration, e.g., with the cutting-edge in the same physical configuration.

[0294] According to various embodiments, the planarization tool may be configured to planarize the one or more workpieces when they are arranged on the chuck (e.g., placed on the chuck).

[0295] According to various embodiments, a planarization tool may comprise: a cutting part carrier rotatable about a rotation axis, wherein the planarization tool and the chuck are configured for translation relative to each other parallel to a direction perpendicular to the rotation axis.

[0296] According to various embodiments, a mechanical hardness of the cutting part is more than (in other words, greater than) a mechanical hardness of at least one of the chuck and the one or more workpieces. For example, the cutting part may comprise or be formed from a material hard enough to planarize the one or more workpieces and the chuck.

[0297] According to various embodiments, the machining cutting part may comprise or be formed from carbon in at least one of a carbide (e.g., a metal carbide such as tungsten carbide), a diamond configuration, or a diamond-like carbon configuration.

[0298] According to various embodiments, the machining cutting part may comprise or be formed from a ceramic.

[0299] According to various embodiments, the chuck may comprise at least one vacuum line for connection to a vacuum-generating system; wherein the at least one portion of the chuck may comprise at least one through-opening connected to the at least one vacuum line.

[0300] According to various embodiments, the chuck may comprise a plurality of vacuum lines; wherein the at least one portion of the chuck may comprise a plurality of mutually separated adhesion regions, wherein each adhesion region of the plurality of adhesion regions may comprise at least one through-opening; wherein the at least one through-opening of each adhesion region of the plurality of adhesion regions is connected to at least one vacuum line of the plurality of vacuum lines.

[0301] According to various embodiments, the at least one portion of the chuck may be proximate to a side of the chuck (e.g., configured to support one or more workpieces, e.g., each opposite the one or more workpieces, and / or including one or more projections); wherein the chuck may have at least one further portion remote from the side; and wherein the mechanical hardness of the at least one further portion of the chuck may be greater than a mechanical hardness of the at least one portion of the chuck.

[0302] According to various embodiments, the at least one further section may comprise or be formed from a metallic material.

[0303] According to various embodiments, the at least one section of the chuck can protrude from the at least one further section.

[0304] According to various embodiments, the at least one portion may comprise or be formed from at least one of a film, a layer (e.g., a coating), and a plate.

[0305] According to various embodiments, the at least one section may contain particles or be formed from particles and / or an aerosol.

[0306] According to various embodiments, the mechanical hardness of the at least one portion of the chuck is less than a mechanical hardness of at least one of a nickel-based alloy and an iron-based alloy.

[0307] According to various embodiments, the at least one portion of the chuck may comprise or be formed from a polymer.

[0308] According to various embodiments, the planarizing of the one or more workpieces and the planarizing of the at least one portion of the chuck differ in speed (e.g., by more than about 10%, 20%, or 30% and / or by less than about 90%, 75%, or 50%) of at least one of: a rotation of the planarizing tool, a translation between the chuck and the planarizing tool, a revolution of a cutting cutting part of the planarizing tool.

[0309] According to various embodiments, a chuck may comprise: a first side configured to be attached to a chuck holder (e.g., to a chuck base); a second side opposite the first side, wherein the second side is configured to support (e.g., opposite) one or more workpieces; at least one vacuum line for connection to a vacuum-generating system; and at least one portion close to the second side (e.g., remote from the support beam) including at least one through-opening connected to the at least one vacuum line such that one or more workpieces picked up via the second side are adhered by suction when a vacuum is generated in the at least one vacuum line; wherein a mechanical hardness of the at least one portion close to the second side (e.g.,remote from the support beam) is configured such that planarizing the one or more workpieces and planarizing the at least one portion use at least one of a planarizing tool and a cutting part in the same physical configuration.

[0310] According to various embodiments, the chuck may comprise at least one vacuum line for connection to a vacuum-generating system; wherein the at least one portion of the chuck may comprise at least one through-opening connected to the at least one vacuum line.

[0311] According to various embodiments, at least two vacuum lines can be decoupled from each other.

[0312] According to various embodiments, the at least one portion may be remote from the first side; wherein the chuck may have at least one further portion proximate to the first side; and wherein a mechanical hardness of the at least one further portion is greater than the mechanical hardness of the at least one portion.

[0313] According to various embodiments, the at least one further section may comprise or be formed from a metallic material.

[0314] According to various embodiments, the at least one portion may comprise or be formed from at least one of a film, a layer (e.g., a coating), and a plate.

[0315] According to various embodiments, the at least one section may contain particles or be formed from particles and / or an aerosol.

[0316] According to various embodiments, the mechanical hardness of the at least one portion of the chuck may be less than a mechanical hardness of at least one of a nickel-based alloy and an iron-based alloy.

[0317] According to various embodiments, the at least one portion of the chuck may comprise or be formed from a polymer.

[0318] According to various embodiments, the planarizing of the one or more workpieces and the planarizing of the at least one portion of the chuck may differ in a speed of at least one of: a rotation of the planarizing tool, a translation between the chuck and the planarizing tool, a revolution of a cutting cutting part of the planarizing tool.

[0319] According to various embodiments, a method for planarizing one or more workpieces may comprise: planarizing at least a portion of a chuck using a planarizing tool; disposing one or more workpieces over the at least one portion of the chuck after planarizing the at least one portion of the chuck; and planarizing the one or more workpieces using the planarizing tool; wherein a mechanical hardness of the at least one portion of the chuck is configured such that planarizing the one or more workpieces and planarizing the at least one portion of the chuck use the planarizing tool in the same cutting part configuration, e.g., the cutting part in the same physical configuration.

[0320] According to various embodiments, a method of planarizing one or more workpieces, the method comprising: planarizing at least a portion of a chuck using a planarizing tool to form a planarized support surface of the chuck; disposing one or more workpieces over the planarized surface of the chuck; and planarizing the one or more workpieces using the planarizing tool to form a planarized workpiece surface of the one or more workpieces; wherein a mechanical hardness of the at least one portion of the chuck is configured such that planarizing the one or more workpieces and planarizing the at least one portion of the chuck use the planarizing tool in the same cutting part configuration, e.g., the cutting part in the same physical configuration.

[0321] According to various embodiments, a method for adjusting a workpiece planarization assembly including a chuck and a planarization tool, wherein a mechanical hardness of the at least one portion of the chuck is configured such that planarizing the one or more workpieces and planarizing the at least one portion of the chuck use the planarization tool in the same configuration, may comprise: providing a machining cutting configuration (e.g., in a workpiece planarization configuration) of the planarization tool in which the planarization tool is configured to planarize one or more workpieces on the workpiece support; and planarizing the at least one portion of the chuck by the planarization tool in the machining cutting configuration (e.g., in the workpiece planarization configuration).

[0322] According to various embodiments, the workpiece planarization assembly may include a base (also referred to as a chuck base) for mounting the chuck. The chuck base may optionally include a vacuum-generating system (e.g., at least one pump, e.g., comprising at least one vacuum pump) for generating a vacuum in the chuck. In various embodiments, the chuck may be attached to the chuck base or at least configured to be attached to the chuck base. For example, the chuck base may include or be formed from a stand on which the chuck is mounted. In one or more embodiments, the chuck may protrude from the chuck base (e.g., at least one of laterally and vertically). In one or more embodiments, the chuck may have a planar surface (e.g., including openings for the at least one through-hole).In one or more embodiments, the chuck and the chuck base can be coupled to one another in an airtight manner (in other words, vacuum-tight, e.g., by a seal). Alternatively or additionally, the workpiece carrier and the support carrier can be coupled to one another in an airtight manner (in other words, vacuum-tight, e.g., by a seal). In one or more embodiments, at least one of the chuck and the chuck base can be metallic. In one or more embodiments, at least one of the chuck and the workpiece carrier can be non-metallic. In one or more embodiments, the workpiece carrier can protrude from the support carrier (e.g., laterally). In one or more embodiments, at least one of the support carrier, the chuck, and the workpiece carrier can be plate-like. For example, at least one of the support carrier, the chuck, and the workpiece carrier can comprise or be formed from a plate.The chuck base can have a table or be formed from it. The workpiece carrier can have an insert or be formed from it.

[0323] According to various embodiments, the workpiece planarization assembly may further comprise a chuck holder, wherein the support beam may be configured to be attached to the chuck holder.

[0324] According to various embodiments, the chuck holder may comprise or be formed from a chuck base.

[0325] According to various embodiments, the chuck, e.g., its support carrier, can have a supply port for workpiece clamping. The supply port can comprise or be formed from at least one of one or more electrical connectors and one or more vacuum connectors. The supply port can remain connected to a supply device during workpiece carrier replacement. This enables quick and economical replacement of the workpiece carrier, e.g., when the workpiece carrier has been thinned to a certain degree or thickness (in other words, worn out).

[0326] In one or more embodiments, the chuck and the workpiece may be planarized in the same cutting-edge configuration. Using the same cutting-edge configuration may provide a reproducible transfer of the planarization plane from the chuck to the workpiece. Other parameters (e.g., speed of the second translation, speed of rotation of the cutting-edge, and / or contact pressure between the chuck and the planarizing tool) may differ from planarizing the chuck to planarizing the workpiece. In one or more embodiments, at least one of the speed of the second translation, the speed of rotation of the cutting-edge, and the contact pressure between the chuck and the planarizing tool may be the same during planarizing the chuck and planarizing the workpiece.The cutting part configuration can be defined by the cutting part used and its spatial configuration, e.g., at least one of position and orientation. For example, the cutting part can be maintained between the planarization of the chuck and the planarization of the workpiece. Alternatively or additionally, the spatial configuration of the cutting part can be maintained between the planarization of the chuck and the planarization of the workpiece. In other words, the same cutting part configuration can be understood as using the cutting part in the same physical configuration for both the planarization of the chuck and the planarization of the workpiece.

[0327] According to various embodiments, the planarization tool may comprise or be formed from a cutting cutting part configured to rotate about a rotational axis; wherein the planarization tool and the chuck are configured to be displaceable relative to each other in a direction perpendicular to the rotational axis (in other words, displaceable along mutually parallel axes, wherein the parallel axes are aligned perpendicular to the rotational axis).

[0328] According to various embodiments, a method for planarizing one or more workpieces may include: planarizing at least a portion of a chuck using a planarization tool; disposing one or more workpieces over the at least a portion of the chuck after planarizing the at least a portion of the chuck; and planarizing the one or more workpieces using the planarization tool; and coating or forming the at least a portion of the chuck using an aerosol (e.g., by exposing it to an aerosol).

[0329] According to various embodiments, a method for planarizing a workpiece carrier may comprise: planarizing at least a portion of the workpiece carrier using a planarization tool; and coating or forming the at least a portion of the workpiece carrier (e.g., comprising one or more protrusions of the workpiece carrier) using an aerosol (e.g., by exposing it to an aerosol).

[0330] According to various embodiments, a workpiece planarization assembly may comprise: a chuck having at least one portion configured to support one or more workpieces; and a planarization tool configured to planarize the at least one portion of the chuck and to planarize one or more workpieces on the at least one portion of the chuck; wherein the at least one portion of the chuck comprises at least one of particles (e.g., particle remnants), pores, and / or a polymer.

[0331] According to various embodiments, the planarization tool may comprise: a cutting part configured to rotate about a rotation axis; wherein the planarization tool and the chuck are configured to be displaceable (in other words, for translation) relative to each other, parallel to a direction perpendicular to the rotation axis (in other words, displaceable along mutually parallel axes, wherein the parallel axes are aligned perpendicular to the rotation axis).

[0332] According to various embodiments, a mechanical hardness of the cutting part may be higher than a mechanical hardness of at least one of the chuck and the one or more workpieces.

[0333] According to various embodiments, the chuck may comprise at least one vacuum line for connection to a vacuum-generating system; wherein the at least one portion of the chuck comprises at least one through-opening connected to the at least one vacuum line.

[0334] According to various embodiments, a mechanical hardness of the at least one portion of the chuck is configured such that planarizing the one or more workpieces and planarizing the at least one portion of the chuck utilize the planarizing tool in the same cutting part configuration.

[0335] According to various embodiments, the chuck may comprise a plurality of vacuum lines; wherein the at least one portion of the chuck may comprise a plurality of adhesion regions separated from one another, wherein each adhesion region of the plurality of adhesion regions has at least one through-opening; wherein the at least one through-opening of each adhesion region of the plurality of adhesion regions is connected to at least one vacuum line of the plurality of vacuum lines.

[0336] According to various embodiments, the at least one portion of the chuck is located proximate a side of the chuck configured to support one or more workpieces; wherein the chuck may include at least one further portion remote from the side; and wherein the mechanical hardness of the at least one further portion of the chuck may be greater than a mechanical hardness of the at least one portion of the chuck.

[0337] According to various embodiments, the at least one further section may comprise or be formed from a metallic material and / or a ceramic material (e.g. having a greater hardness than the at least one section).

[0338] According to various embodiments, the at least one section of the chuck may have a higher porosity than the at least one further section of the chuck.

[0339] According to various embodiments, the at least one section of the chuck may have a higher particle density than the at least one further section of the chuck.

[0340] According to various embodiments, the at least one section of the chuck may have a lower melting temperature or glass transition temperature than the at least one further section of the chuck.

[0341] According to various embodiments, the at least one portion of the chuck may have more projections than the at least one further portion of the chuck.

[0342] According to various embodiments, the at least one section of the chuck may have a greater thermal expansion than the at least one further section of the chuck.

[0343] According to various embodiments, the at least one section of the chuck may have a lower mechanical hardness than the at least one further section of the chuck.

[0344] According to various embodiments, a thermal expansion coefficient of the at least one further section may be less than approximately 1 10 -5 / K, e.g. less than about 5·10 -6 / K, e.g. less than about 2·10 -6 / K, e.g. less than about 1·10 -6 / K, e.g. less than about 5·10 - 7 / K, e.g. less than about 2·10 -7 / K.

[0345] According to various embodiments, the particles may be embedded in the polymer or form a matrix in which the pores (vacancy spaces) are embedded.

[0346] According to various embodiments, the at least one portion may comprise or be formed from at least one of the following: at least one film comprising or formed from the polymer, at least one (e.g., porous) layer comprising the pores and / or the particles; and a composite material comprising the polymer and the particles embedded in the polymer.

[0347] According to various embodiments, the at least one portion may comprise one or more protrusions and at least one layer (e.g., a film or a porous layer), wherein the at least one layer comprises at least one of the polymer, the pores, and the particles, wherein the at least one layer covers (e.g., at least partially, in other words, partially or completely) the one or more protrusions, e.g., at least an upper portion of each protrusion of the one or more protrusions.

[0348] According to various embodiments, the polymer may comprise or be formed from a thermoplastic polymer or a thermosetting polymer (e.g., a resin).

[0349] According to various embodiments, the thermoplastic polymer may comprise or be formed from acrylic, acrylonitrile butadiene styrene, nylon, polylactic acid, polybenzimidazole, polycarbonate, polyethersulfone, polyetheretherketone, polyetherimide, polyethylene, polyphenylene oxide, polyphenylene sulfide, polypropylene, polystyrene, polyvinyl chloride, and / or Teflon.

[0350] According to various embodiments, a workpiece planarization assembly may include or be formed from: a chuck having at least one portion configured to support one or more workpieces; and a planarization tool configured to planarize the at least one portion of the chuck and to planarize one or more workpieces on the at least one portion of the chuck; wherein the at least one portion of the chuck includes or is formed from at least one of the following: particles (e.g., particle debris), pores, and / or a polymer; wherein a mechanical hardness of the at least one portion of the chuck is configured such that planarizing the one or more workpieces and planarizing the at least one portion of the chuck utilize the planarization tool in the same cutting part configuration.

[0351] According to various embodiments, a chuck may comprise: a first side configured to be attached to a chuck holder; a second side opposite the first side, the second side configured to support one or more workpieces; at least one vacuum line for connection to a vacuum-generating system; and at least one portion proximate the second side, the portion having at least one through-opening connected to the at least one vacuum line such that one or more workpieces picked up via the second side are adhered by suction when a vacuum is generated via (e.g., through and / or into) the at least one vacuum line; wherein the at least one portion proximate the second side comprises at least one of particles (e.g., particle residues), pores, and / or a polymer.

[0352] According to various embodiments, the at least one section is remote from the first side; wherein the chuck has at least one further section proximate to the first side; and wherein a mechanical hardness of the at least one further section is greater than the mechanical hardness of the at least one section.

[0353] According to various embodiments, the at least one further section may comprise or be formed from a metallic material and / or a ceramic material (e.g. having a greater hardness than the at least one section).

[0354] According to various embodiments, a thermal expansion coefficient of the at least one further section is less than approximately 1 10 -5 / K, e.g. less than about 5·10 -6 / K, e.g. less than about 2·10 -6 / K, e.g. less than about 1·10 -6 / K, e.g. less than about 5·10 -7 / K, e.g. less than about 2·10 -7 / K.

[0355] According to various embodiments, the particles may comprise or be formed from the polymer or a metal (e.g. having a lower hardness than another portion of the workpiece carrier).

[0356] According to various embodiments, the at least one portion may comprise or be formed from at least one of the following: at least one film comprising or formed from the polymer, at least one (e.g., porous) layer comprising the pores and / or the particles; and a composite material comprising the polymer and the particles embedded in the polymer.

[0357] According to various embodiments, the at least one portion may comprise one or more protrusions and at least one layer (e.g., a film or a porous layer), wherein the at least one layer may comprise at least one of the polymer, the pores, and the particles, wherein the at least one layer covers (e.g., at least partially, in other words, partially or completely) the one or more protrusions, e.g., at least an upper portion of each protrusion of the one or more protrusions.

[0358] According to various embodiments, a method for providing a planarizable workpiece carrier may comprise the following: providing a chuck having a first side configured to be attached to a chuck holder; a second side opposite the first side, and at least one vacuum line for connecting to a vacuum-generating system; wherein the second side is configured to support one or more workpieces; and forming or reinforcing at least one portion proximate the second side, wherein the at least one portion has at least one through-opening connected to the at least one vacuum line such that one or more workpieces picked up via the second side are adhered by suction when a vacuum is generated via (e.g., through and / or in) the at least one vacuum line; wherein forming or reinforcing comprises exposing the second side to an aerosol (e.g.,solvent-free), or at least one of casting, pressing or laminating a (e.g. metal-free) material onto the second side (e.g. by dry deposition and / or solvent-free).

[0359] According to various embodiments, the method may further comprise: planarizing at least a portion of a chuck using a planarization tool; disposing one or more workpieces over the at least one portion of the chuck after planarizing the at least one portion of the chuck; and planarizing the one or more workpieces using the planarization tool.

[0360] Various embodiments may be configured similarly or at least as one of the following examples.

[0361] Example 1: A workpiece planarization assembly comprising: a chuck having at least one portion configured to support one or more workpieces; and a planarization tool configured to planarize the at least one portion of the chuck and planarize one or more workpieces on the at least one portion of the chuck; wherein a mechanical hardness of the at least one portion of the chuck is configured such that planarizing the one or more workpieces and planarizing the at least one portion of the chuck utilize the planarizing tool in the same cutting part configuration.

[0362] Example 2: The workpiece planarization assembly of Example 1, wherein the planarization tool comprises: a cutting part configured to rotate about a rotational axis; wherein the planarization tool and the chuck are configured to be displaceable (in other words, displaceable) relative to each other parallel to a direction perpendicular to the rotation axis.

[0363] Example 3: The workpiece planarization arrangement according to Example 1, wherein a mechanical hardness of the cutting cutting part is greater than a mechanical hardness of at least one of the chuck and the one or more workpieces.

[0364] Example 4: The workpiece planarization arrangement according to Example 1, wherein the chuck has at least one vacuum line for connection to a vacuum generating system; and wherein the at least one portion of the chuck has at least one through-opening connected to the at least one vacuum line.

[0365] Example 5: The workpiece planarization arrangement according to Example 1, wherein the chuck has a plurality of vacuum lines; wherein the at least one portion of the chuck has a plurality of adhesion regions separated from one another, each adhesion region of the plurality of adhesion regions having at least one through-opening; wherein the at least one through-opening of each adhesion region of the plurality of adhesion regions is connected to at least one vacuum line of the plurality of vacuum lines.

[0366] Example 6: The workpiece planarization arrangement according to Example 1, wherein the at least one portion of the chuck is proximate to a side of the chuck configured to support one or more workpieces; wherein the chuck has at least one further portion remote from the side; and wherein a mechanical hardness of the at least one further portion of the chuck is greater than a mechanical hardness of the at least one portion of the chuck.

[0367] Example 7: The workpiece planarization arrangement according to Example 6, wherein the at least one further section comprises a metallic material.

[0368] Example 8: The workpiece planarization arrangement according to Example 6, wherein the at least one portion of the chuck protrudes from the at least one further portion.

[0369] Example 9: The workpiece planarization arrangement according to Example 6, wherein the at least one section of the chuck is replaceably attached to the at least one further section.

[0370] Example 10: The workpiece planarization arrangement according to Example 1, wherein the at least one portion comprises at least one of a film, a layer, and a plate.

[0371] Example 11: The workpiece planarization arrangement according to Example 1, wherein a mechanical hardness of the at least one portion of the chuck is less than a mechanical hardness of at least one of a nickel-based alloy and an iron-based alloy.

[0372] Example 12: The workpiece planarization arrangement according to Example 1, wherein at least one portion of the chuck comprises a polymer.

[0373] Example 13: The workpiece planarization arrangement according to Example 1, wherein the planarizing of the one or more workpieces and the planarizing of the at least one portion of the chuck differ in a speed of at least one of the following: a rotation of the planarizing tool, a translation between the chuck and the planarizing tool, a revolution of a cutting edge of the planarizing tool.

[0374] Example 14: A chuck comprising: a first side configured for attachment to a chuck holder; a second side opposite the first side, the second side configured to support one or more workpieces; at least one vacuum line for connection to a vacuum generating system; and at least one portion proximate the second side, having at least one through-opening connected to the at least one vacuum line, such that one or more workpieces received via the second side adhere by suction when a vacuum is created via the at least one vacuum line; wherein a mechanical hardness of the at least one portion proximate the second side is configured such that planarizing the one or more workpieces and planarizing the at least one portion use a planarizing tool in the same cutting part configuration.

[0375] Example 15: The Chuck according to Example 14, wherein the at least one portion is removed from the first side; wherein the chuck has at least one further section proximate to the first side; and wherein a mechanical hardness of the at least one further section is greater than the mechanical hardness of the at least one section.

[0376] Example 16: The Chuck according to Example 15, wherein the at least one further section comprises a metallic material.

[0377] Example 17: The Chuck according to Example 14, wherein the at least one portion comprises at least one of a film, a layer, and a plate.

[0378] Example 18: The Chuck according to Example 14, wherein the mechanical hardness of the at least one portion of the chuck is less than a mechanical hardness of at least one of a nickel-based alloy and an iron-based alloy.

[0379] Example 19: The Chuck according to Example 14, wherein at least one portion of the chuck comprises a polymer.

[0380] Example 20: A method for planarizing one or more workpieces, the method comprising: Planarizing at least a portion of a chuck using a planarization tool; Placing one or more workpieces over the at least one portion of the chuck after planarizing the at least one portion of the chuck; and Planarizing the one or more workpieces using the planarization tool; wherein a mechanical hardness of the at least one portion of the chuck is configured that planarizing the one or more workpieces and planarizing the at least one portion of the chuck use the planarizing tool in the same cutting part configuration.

[0381] In one or more embodiments, the mechanical hardness of the at least one portion (of the chuck) may be configured such that planarizing the one or more workpieces and planarizing the at least one portion of the chuck use the planarizing tool in the same cutting part configuration. Additionally or alternatively, the at least one portion may include or be formed from at least one layer (also referred to as at least one sacrificial layer). The at least one sacrificial layer may be formed, for example, by aerosol exposure, molding a material (e.g., a polymer, e.g., a thermoplastic) disposed on the chuck (e.g., its support stabilization region), laminating and / or pressing a material (e.g., a film) onto the chuck (e.g., its support stabilization region), or the like.The finished at least one sacrificial layer may comprise at least one of the following: particles, a polymer and / or pores, e.g., a plurality of at least one of particles and / or pores as the carrier stabilization region and / or further at least one section.

[0382] Although the invention has been particularly shown and described with reference to specific embodiments, it should be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of the invention as defined by the appended claims. Accordingly, the scope of the invention is indicated by the appended claims, and all changes which come within the meaning and range of equivalence of the claims are intended to be embraced therein.

Claims

[1] Workpiece planarization arrangement (100), comprising: a chuck (102) comprising a support beam (102c) and a workpiece carrier (102s), wherein the workpiece carrier (102s has at least one for carrying one or a portion (102p) configured to support a plurality of workpieces (106), wherein the at least one portion (102p) has a support surface (122s) configured to provide physical contact with the one or more workpieces (106); and a planarization tool (104) configured to planarize the support surface (122s) of the at least one portion (102p) of the chuck (102) and one or planarizing a plurality of workpieces (106) on the at least one portion (102p) of the chuck (102); wherein the at least one portion (102p) of the chuck (102) comprises at least one of particles, pores and / or a polymer, wherein a mechanical hardness of the at least one portion (102p) is smaller than a mechanical hardness of the support beam (102c). [2] The workpiece planarization assembly (100) of claim 1, wherein a mechanical hardness of the at least one portion (102p) of the chuck (102) is configured such that planarizing the one or more workpieces (106) and planarizing the at least one portion (102p) of the chuck (102) use the planarization tool (104) with the same cutting edge (104b). [3] The workpiece planarization assembly (100) of claim 1 or 2, wherein the particles comprise the polymer or a metal. [4] Workpiece planarization arrangement (100) according to one of claims 1 to 3, wherein the at least one section (102p) comprises at least one of the following: at least one film comprising the polymer, at least one layer comprising the pores and / or the particles; and a composite material comprising the polymer and the particles embedded in the polymer. [5] Workpiece planarization arrangement (100) according to one of claims 1 to 4, wherein the at least one section (102p) has one or more projections (704) and at least one layer, wherein the at least one layer comprises at least one of the polymer, the pores and the particles, wherein the at least one layer covers the one or more protrusions (704). [6] Workpiece planarization arrangement (100), comprising: a chuck (102) comprising a support beam (102c) and a workpiece carrier (102s), wherein the workpiece carrier (102s) has at least one portion (102p) configured to support one or more workpieces (106), wherein the portion (102p) has a support surface (122s) configured to provide physical contact with the one or more workpieces (106); and a planarization tool (104) configured to planarize the support surface (122s) of the at least one portion (102p) of the chuck (102) and one or planarizing a plurality of workpieces (106) on the at least one portion (102p) of the chuck (102); wherein a mechanical hardness of the at least one portion (102p) of the chuck (102) is configured such that the planarization of the one or more workpieces (106) and the planarization of the support surface (122s) of the at least one section (102p) of the chuck (102) uses the planarization tool (104) with the same cutting part (104b), wherein a mechanical hardness of the at least one portion (102p) is smaller than a mechanical hardness of the support beam (102c). [7] The workpiece planarization assembly (100) of any one of claims 1 to 6, wherein the planarization tool (104) comprises: a cutting part (104b) configured to rotate about a rotation axis (101a); wherein the planarization tool (104) and the chuck (102) are configured for displacement relative to each other parallel to a direction perpendicular to the rotation axis (101a). [8] Workpiece planarization arrangement (100) according to one of claims 1 to 7, wherein a mechanical hardness of the cutting cutting part (104b) is greater than a mechanical hardness of at least one of the chuck (102) and the one or more workpieces (106). [9] Workpiece planarization arrangement (100) according to one of claims 1 to 8, wherein the chuck (102) has at least one vacuum line (402) for connection to a vacuum generating system (404); and wherein the at least one section (102p) of the chuck (102) has at least one through-opening (414) connected to the at least one vacuum line (402). [10] Workpiece planarization arrangement (100) according to one of claims 1 to 9, wherein the chuck (102) has a plurality of vacuum lines (402); wherein the at least one portion (102p) of the chuck (102) has a plurality of adhesion regions (602a, 602b) separated from one another, each adhesion region of the plurality of adhesion regions (602a, 602b) having at least one through-opening (414); wherein the at least one through-opening (414) of each adhesion region of the plurality of adhesion regions (602a, 602b) is connected to at least one vacuum line of the plurality of vacuum lines (402). [11] Workpiece planarization arrangement (100) according to one of claims 1 to 10, wherein the at least one portion (102p) of the chuck (102) is proximate to a side (800b) of the chuck (102) configured to support one or more workpieces (106); wherein the chuck (102) has at least one further section (802) remote from the side (800b); and wherein a mechanical hardness of the at least one further section (802) of the chuck (102) is greater than a mechanical hardness of the at least one section (102p) of the chuck (102). [12] The workpiece planarization assembly (100) of claim 11, wherein the at least one further portion (802) comprises a metallic material and / or a ceramic material. [13] Workpiece planarization arrangement (100) according to claim 11 or 12, wherein a thermal expansion coefficient of the at least one further section (802) is less than 1·10 -5 / K is. [14] Workpiece planarization arrangement (100) according to one of claims 11 to 13, wherein the at least one portion (102p) of the chuck (102) is replaceably mounted. [15] Workpiece planarization arrangement (100) according to one of claims 1 to 14, wherein the at least one section (102p) comprises at least one of a foil and a plate. [16] Chuck (850), featuring: a first side (800a) configured for attachment to a chuck holder; a second side (800b) opposite the first side (800a), the second side (800b) being configured to support one or more workpieces (106); a support bracket (102c) arranged on the first side (800a); a sacrificial support region (102p) disposed on the second side (800b), the sacrificial support region (102p) having a support surface (122s) configured to provide physical contact with the one or more workpieces (106); at least one vacuum line (402) for connecting to a vacuum generating system (404); and wherein the sacrificial support region (102p) has at least one through-opening (414) connected to the at least one vacuum line (402), so that one or several workpieces (106) which are picked up via the second side (800b), adheres / adheres by suction force when a vacuum is created via the at least one vacuum line (402); wherein the sacrificial support region (102p) comprises at least one of particles, pores and / or a polymer, wherein a mechanical hardness of the sacrificial support region (102p) is smaller than a mechanical hardness of the support beam (102c). [17] Chuck (850) according to claim 16, wherein the sacrificial support region (102p) comprises at least one of the following: at least one film comprising the polymer, at least one layer comprising the pores and / or the particles; and a composite material comprising the polymer and the particles embedded in the polymer. [18] Chuck (850) according to claim 16 or 17, wherein the sacrificial support region (102p) has one or more protrusions (704) and at least one layer, wherein the at least one layer comprises at least one of the polymer, the pores and the particles, wherein the at least one layer covers the one or more protrusions (704). [19] Chuck (850) according to one of claims 16 to 18, wherein the support carrier (102c) comprises a metallic material and / or a ceramic material. [20] Chuck (850) according to one of claims 16 to 19, wherein a thermal expansion coefficient of the support beam (102c) is less than 1·10 -5 / K is. [21] A method for providing a planarizable workpiece carrier (102s), the method comprising: Providing a chuck (850) having a first side (800a) configured to be attached to a chuck holder, a second side (800b) opposite the first side (800a), and at least one vacuum line (402) for connecting to a vacuum-generating system (404), wherein the second side (800b) is configured to support one or more workpieces (106), wherein the chuck (850) has a support bracket (102c) arranged on the first side (800a); and Forming or reinforcing at least one section (102p) located on the second side (800b), wherein the at least one section (102p) has at least one through-opening (414) connected to the at least one vacuum line (402) such that one or more workpieces (106) received via the second side (800b) are adhered by suction when a vacuum is generated via the at least one vacuum line (402), wherein the at least one section (102p) has a support surface (122s) configured to provide physical contact with the one or more workpieces (106), wherein a mechanical hardness of the at least one section (102p) is less than a mechanical hardness of the support carrier (102c); wherein forming or reinforcing comprises exposing the second side (800b) to an aerosol, or at least one of casting, pressing, or laminating a material onto the second side (800b); Planarizing a support surface (122s) of the at least one portion (102p) of the chuck (850) using a planarization tool (104); Arranging one or more workpieces (106) over the at least one portion (102p) of the chuck (850) after planarizing the support surface (122s) of the at least one portion (102p) of the chuck (850); and Planarizing the one or more workpieces using the planarization tool (104). [22] A method for planarizing one or more workpieces (106), the method comprising: Planarizing at least one support surface (122s) of a portion (102p) of a chuck (850) using a planarization tool (104), wherein the support surface (122s) is configured to make physical contact with the one or to provide a plurality of workpieces (106), wherein the chuck (850) comprises a support carrier (102c) and a workpiece carrier (102s), wherein the workpiece carrier (102s) has at least one section (102p) configured to support the one or more workpieces (106), wherein the at least one section (102p) has the carrier surface (122s), wherein a mechanical hardness of the at least one section (102p) is less than a mechanical hardness of the support carrier (102c); Arranging one or more workpieces (106) over the at least one portion (102p) of the chuck (850) after planarizing the support surface (122s) of the at least one portion (102p) of the chuck (850); and Planarizing the one or more workpieces (106), using the planarization tool (104); wherein a mechanical hardness of the at least one portion (102p) of the chuck (850) is configured such that planarizing the one or more workpieces (106) and planarizing the support surface (122s) of the at least one portion (102p) of the chuck (850) use the planarizing tool (104) with the same cutting edge (104b).

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