OPTOELECTRONIC COMPONENT, METHOD FOR MANUFACTURING THE SAME

Abstract

Optoelectronic component (1, 100, 300, 310, 320), comprising: an optically active layer structure (104) with a surface (106); at least one particle (108) with a mean diameter (D) that is larger than a specified threshold, wherein the particle (108) is arranged directly on the surface (106) of the optically active layer structure (104), and wherein the particle (108) has a shape such that a cavity (110) is formed between the particle (108) and the surface (106) of the optically active layer structure (104); a buffer structure (114) in direct contact with the particle (108) and the surface (106) of the optically active layer structure (104), wherein the buffer structure (114) is configured such that it substantially fills the cavity (110) and surrounds the particle (108); and an encapsulation layer (116) on or above the surface (106) of the optically active layer structure (104) and the buffer structure (14), wherein the buffer structure (114) is embedded in the encapsulation layer (116), wherein the buffer structure (114) is locally confined to the particle (108) and has a lateral dimension in the range of 2 to 5 times the mean diameter (D) of the enclosed particle (108).

Description

[0001] The invention relates to an optoelectronic component and a method for manufacturing the same.

[0002] Environmentally sensitive electronic components, such as organic light-emitting diodes (OLEDs) or organic photovoltaic devices (OPVs), have an electrically active layered structure that is protected against harmful environmental influences by encapsulation. Harmful environmental influences include water, oxygen that could diffuse into the electrically active layered structure, and mechanical stresses acting upon it. Traditionally, thin-film encapsulation is used to surround the electrically active layered structure. This thin-film encapsulation is typically an inorganic layer with a small thickness, for example, in the range of 10 nm to 250 nm. Thin-film encapsulation is very sensitive to particle inclusions, such as particles that are located on or partially within the thin-film encapsulation, and generally to even the smallest damage.

[0003] Particle inclusions and minor damage can cause electronic components to fail. Therefore, it is essential to detect or prevent such inclusions and damage before shipping the electronic components.

[0004] Currently, considerable effort is being invested in producing flawless thin-film encapsulations. For example, the thin-film encapsulation is being made more robust by inkjet-printed organic layers or thick, gas-phase-deposited inorganic layers, with these layers encapsulating the particle contaminants, a process also known as particle trapping. However, such thick layers on the thin-film encapsulation lead to easier delamination of the encapsulation due to thermomechanical stress. Therefore, current research focuses on minimizing the thickness of these layers on the thin-film encapsulation to find a compromise between particle trapping and delamination.

[0005] The publications DE 102013106937 A1, WO 2015 / 196612 A1, DE 102011079160 A1, US 2011 / 0287682 A1 describe optoelectronic components.

[0006] The object of the invention is to provide an optoelectronic component that exhibits higher reliability. A further object of the invention is to provide a method for manufacturing an optoelectronic component that increases the yield of reliable optoelectronic components.

[0007] The problem is solved by an optoelectronic component according to claim 1.

[0008] According to one aspect of the invention, the problem is solved by an optoelectronic device comprising: an optically active layer structure with a surface; at least one particle with a mean diameter larger than a predetermined threshold, wherein the particle is arranged directly on the surface of the optically active layer structure, and wherein the particle has a shape such that a cavity is formed between the particle and the surface of the optically active layer structure; a buffer structure in direct contact with the particle and the surface of the optically active layer structure, wherein the buffer structure is configured to substantially fill the cavity and enclose the particle; and an encapsulation layer on or above the surface of the optically active layer structure and the buffer structure, wherein the buffer structure is embedded in the encapsulation layer.

[0009] The particle is a particle contaminant. By enclosing the particle and filling the cavity, the buffer layer increases the particle's fixation, such as its positional stability, on the surface of the optically active layer structure. This prevents the particle from moving laterally on the surface of the optically active layer structure, or at least allows it to move only under considerable force. Movement of the particle on the surface of the optically active layer structure can damage the surface, potentially leading to the failure of the optoelectronic device. Therefore, by improving the particle fixation provided by the buffer structure, the reliability and stability of the optoelectronic device can be increased.

[0010] Because the particle is additionally fixed by filling the cavity with the buffer structure material, the encapsulation layer can be made thinner than conventional layers while maintaining the same particle-trapping effect. This reduces thermomechanical stresses in the optoelectronic component, leading to a lower risk of delamination of the component layers and thus to more stable optoelectronic components. This also reduces the failure rate of the optoelectronic component for the customer.

[0011] The cavity can be filled, for example, by means of a wet-chemically formed buffer structure made of an organic material or by local physical vapor deposition under normal pressure.

[0012] The term "optically active layer structure" can refer to different layers of an optoelectronic component, depending on the application. The optically active layer structure can be the part of the optoelectronic component in which an electric current flows during operation and / or light is absorbed or emitted. Additionally, the optically active layer structure can incorporate a thin-film encapsulation structure, which protects it from the diffusion of water and / or oxygen.

[0013] In a training course, the specified threshold value has a value in the range of approximately 1 µm to approximately 20 µm.

[0014] In a further development, the specified threshold value depends on at least one predefined property of the particle. This predefined property could be, for example, a predefined optical property of the particle, such as its transparency to visible light or its average refractive index for visible light. Alternatively or additionally, the predefined property could be, for example, the electrical conductivity or the hardness of the particle material. This allows only particles classified as critical with regard to the probability of failure of the optoelectronic component to be surrounded by a buffer structure. This reduces the number and quantity of buffer structures and thus their potential visibility.

[0015] In a further refinement, the optically active layer structure includes an electrode. This electrode has a surface, and the surface of the electrode, at least in the area of ​​direct contact between the particle and the surface of the optically active layer structure, corresponds to the surface of the optically active layer structure. This allows particles to be fixed in place even before an encapsulation layer is formed on or above the electrode. A thin-film encapsulation structure, such as a hermetically sealed, atomically layered deposition (ALD) encapsulation layer, can then enclose and hermetically seal the buffer structure. This enables an optoelectronic device with improved encapsulation.

[0016] In a further development, the optically active layer structure has a thin-film encapsulation structure, wherein the thin-film encapsulation structure has a surface and the surface of the thin-film encapsulation structure corresponds to the surface of the optically active layer structure at least in the area of ​​direct contact of the particle with the surface of the optically active layer structure.

[0017] The thin-film encapsulation structure is, for example, a hermetically sealed atomically layered deposition (ALD) layer. The encapsulation layer can be another atomically layered deposition (ALD) layer or a chemically or physically vapor-deposited layer. The buffer structure increases the robustness of the thin-film encapsulation structure with respect to damage caused by particle displacement on the surface. This, in turn, increases the reliability of the optoelectronic device.

[0018] In a further development, the thin-film encapsulation structure has several barrier layers, wherein one barrier layer of the several barrier layers has a surface and the surface of the barrier layer corresponds to the surface of the optically active layer structure at least in the area of ​​direct contact of the particle with the surface of the optically active layer structure.

[0019] In other words, the thin-film encapsulation structure is a stack of layers or a (nano)laminate consisting of multiple barrier layers, which can also be referred to as thin-film encapsulation layers or encapsulation layers. The thin-film encapsulation structure can be designed as a photonic crystal or Bragg mirror, and / or the individual barrier layers can have different moduli of elasticity, resulting in low mechanical stress within the thin-film encapsulation structure. This increases the reliability of the optoelectronic device.

[0020] In a further refinement, the thin-film encapsulation structure comprises at least one barrier layer that encloses another particle embedded by means of a further buffer structure. Alternatively, the barrier layer with the embedded particle can also be considered an encapsulation layer, and the surface of this encapsulation layer can be considered the surface of the optically active layer structure on which another encapsulation layer is formed. In other words, the optoelectronic device can have multiple buffer structures, and these buffer structures are not necessarily located in the same plane or on the same surface.

[0021] In a further refinement, the optically active layer structure, together with the buffer structure, has a first surface with a first roughness, and the encapsulation layer has a second surface with a second roughness, the second roughness being lower than the first. The encapsulation layer thus enables planarization of the optoelectronic device's surface. This reduces the pressure acting on the optically active layer structure in the area of ​​the particle and the buffer structure, as the contact area is increased by the flat surface of the encapsulation layer.

[0022] In a further refinement, several particles with a mean diameter greater than the specified threshold and several buffer structures are arranged on the surface of the optically active layer structure, with each particle enclosed by a buffer structure. The particles are particle contaminants. The multiple buffer structures and particles are therefore not to be understood as conventional scattering structures. In particular, the position of the particles on the surface of the optically active layer structure is random, whereas in a conventional scattering structure, the particles are arranged within a predetermined area.

[0023] In a further refinement, at least one particle with a mean diameter smaller than the specified threshold is arranged on the surface of the optically active layer structure, with the encapsulation layer directly enclosing this at least one particle. In other words, it is neither necessary nor a given that non-critical particles, i.e., those particles that do not cause optical disturbance or that cannot damage the optically active layer structure, or can only damage it to a negligible extent, are surrounded by a buffer structure.

[0024] In a further development, the buffer structure essentially consists of or is composed of an organic material. This organic material can act as a bonding agent, for example, as an adhesive, between the particle and the material on the surface of the optically active layer structure. This enables better positional fixation of the particle and thus a more stable optoelectronic component.

[0025] The buffer structure can, for example, consist of or be made from one of the following materials: a polyimide, a polyacrylate.

[0026] In a further refinement, the buffer structure exhibits a lateral dimension that is in the range of 2 to 5 times the mean diameter of the enclosed particle. This allows the buffer structure to completely enclose the particle. This, in turn, enables reliable and therefore secure positioning of the particle on the surface of the optically active layer structure.

[0027] According to a further aspect of the invention, the problem is solved by a method for manufacturing an optoelectronic component. The method comprises: forming an optically active layer structure with a surface; capturing at least one particle with a mean diameter greater than a predetermined threshold, wherein the particle is arranged directly on the surface of the optically active layer structure; and forming a buffer structure in direct contact with the particle and the surface of the optically active layer structure. The buffer structure is configured such that it essentially fills a cavity formed between the particle and the surface of the optically active layer structure and surrounds the particle.The method further features the formation of an encapsulation layer on or above the surface of the optically active layer structure and the buffer structure, with the buffer structure being embedded in the encapsulation layer.

[0028] This allows local defects, such as particle contamination, to be detected during the formation of the encapsulation, for example, thin-film encapsulation, by means of a particle detection step, i.e., by checking for particle contamination, for example, using automated optical inspection (AOI) during the fabrication of the optoelectronic device. The particle contamination can then be treated locally before the completion of the optoelectronic device fabrication, for example, before the encapsulation layer has finished forming, so that the contaminated area is protected against subsequent failure and / or is undetectable.

[0029] This results in a better balance between manufacturing and process effort and high-quality encapsulation. Particle-free or virtually particle-free processes are enabled. Furthermore, the thickness of the encapsulation layer can be reduced because the particle is additionally fixed by filling the cavity. This also reduces the defect rate of the optoelectronic component at the customer's site.

[0030] The detection of particles on the optically active layer structure and the corresponding reaction (by forming a buffer structure) to their presence thus occurs earlier in the value chain than with a conventional optoelectronic component. Conventional components would typically be discarded. Therefore, this method can improve the manufacturing yield of the optoelectronic component.

[0031] In a further training course, the buffer structure is formed using wet chemical methods. This enables the cavity to be reliably filled, for example, by using capillary action to draw liquid buffer structure material into the cavity.

[0032] In a further training course, at least one particle is detected using an optical method, for example, an automated optical inspection (AOI) system. This enables cost-effective and reliable detection of particles or potentially critical particle contamination. Furthermore, it can be determined optically, for example using polarization, dark-field, or phase-contrast microscopy, whether a buffer structure is necessary for a detected particle.

[0033] In a further development step, the buffer structure is formed using a serial process, for example, inkjet printing or directed plasma deposition under normal pressure. To illustrate, with multiple particles on the surface of the optically active layer structure, a buffer structure is formed locally around each particle individually and separately.

[0034] In a further development step, the encapsulation layer is formed using a gas-phase deposition process, for example, chemical vapor deposition. The deposition rate of the encapsulation layer can be higher than that of an ALD layer if the optically active layer structure already has an atomic layer deposition (ALD) layer. In other words, the encapsulation layer can have lower hermeticity and greater thickness than an ALD layer. The encapsulation layer can be multilayered and composed of layers of different materials. The thickness of the encapsulation layer can range, for example, from approximately 1 µm to approximately 40 µm.

[0035] Furthermore, a device for carrying out the described method is described. The device comprises: a first component unit for forming the optically active layer structure; a second component unit for capturing the at least one particle; a third component unit for forming the buffer structure; and a fourth component unit for forming the encapsulation layer; and a transport section. The transport section is configured for transporting a substrate between the first, second, third, and fourth component units. The transport section has a gas-tight housing.

[0036] This prevents new particle contamination from reaching the substrate or the optoelectronic component being formed along the transport route.

[0037] Exemplary embodiments of the invention are shown in the figures and are explained in more detail below.

[0038] They show: Fig. 1 A schematic cross-sectional view of an optoelectronic component according to various embodiments; Fig. 2 a schematic cross-sectional view of an optoelectronic component according to various embodiments; Fig. 3A, B, C schematic cross-sectional views of an optoelectronic component according to various embodiments; Fig. 4 a flowchart of an embodiment of a method for manufacturing an optoelectronic component according to various embodiments; and Fig. 5 A schematic representation of a device for carrying out a method for manufacturing an optoelectronic component according to various examples.

[0039] The following detailed description refers to the accompanying drawings, which form part of this description and in which specific embodiments of the invention are shown for illustrative purposes. In this respect, directional terminology such as "top," "bottom," "front," "back," "anterior," "rear," etc., is used with reference to the orientation of the described figure(s). Since components of embodiments can be positioned in a number of different orientations, the directional terminology serves for illustrative purposes and is in no way limiting. It is understood that other embodiments may be used and structural or logical modifications may be made without deviating from the scope of protection of the present invention.It is understood that the features of the various embodiments described herein can be combined with one another, unless specifically stated otherwise. The following detailed description is therefore not to be interpreted as restrictive, and the scope of protection of the present invention is defined by the appended claims.

[0040] Within the scope of this description, the terms "connected," "attached," and "coupled" are used to describe both direct and indirect connections, direct or indirect links, and direct or indirect couplings. In the figures, identical or similar elements are labeled with identical reference symbols where appropriate.

[0041] An optoelectronic assembly can contain one, two, or more optoelectronic components. Optionally, an optoelectronic assembly can also contain one, two, or more electronic components. An electronic component can, for example, be an active and / or a passive component. An active electronic component can, for example, be a computing, control, and / or regulating unit and / or a transistor. A passive electronic component can, for example, be a capacitor, a resistor, a diode, or an inductor.

[0042] An optoelectronic component can be either an electromagnetic radiation emitter or an electromagnetic radiation absorber. An electromagnetic radiation absorber can be, for example, a solar cell or a photodetector. An electromagnetic radiation emitter can, in various embodiments, be an electromagnetic radiation emitting semiconductor component and / or be configured as an electromagnetic radiation emitting diode, an organic electromagnetic radiation emitting diode, an electromagnetic radiation emitting transistor, or an organic electromagnetic radiation emitting transistor. The radiation can be, for example, visible light, ultraviolet light, and / or infrared light.In this context, the electromagnetic radiation-emitting component can be designed, for example, as a light-emitting diode (LED), an organic light-emitting diode (OLED), a light-emitting transistor, or an organic light-emitting transistor. The light-emitting component can be part of an integrated circuit in various embodiments. Furthermore, multiple light-emitting components can be provided, for example, housed in a common package.

[0043] Within the scope of this description, a hermetically sealed layer with respect to water and / or oxygen can be understood as an essentially hermetically sealed layer. A hermetically sealed layer might, for example, have a diffusion rate with respect to water and / or oxygen of less than approximately 10⁻⁵. -1 g / (m 2d) exhibit a hermetically sealed cover and / or a hermetically sealed support, for example, a diffusion rate with respect to water and / or oxygen of less than approximately 10 -4 g / (m 2 d) exhibit, for example in an area of ​​approximately 10 -4 g / (m 2 d) up to approximately 10 -10 g / (m 2 d), for example in an area of ​​approximately 10 -4 g / (m 2 d) up to approximately 10 -6 g / (m 2 d).

[0044] Fig. Figure 1 shows a schematic cross-sectional view of an optoelectronic component 100 according to various embodiments.

[0045] The optoelectronic component 100 has an optically active layer structure 104 on a substrate 102.

[0046] A particle 108 is arranged in direct physical contact 112 on a surface 106 of the optically active layer structure 104. The physical contact 112 is to be understood as the particle 108 being arranged on the surface 106 of the optically active layer structure 106 without an intermediate layer.

[0047] Particle 108 has a mean diameter D. Particle 108 is a particle contaminant for optoelectronic component 100. Particle 108 is, for example, a dust particle. The diameter D is larger than a predefined threshold. The predefined threshold can, for example, be in the range of approximately 1 µm to approximately 20 µm. The predefined threshold can depend on at least one predefined property of the particle, such as its transparency. For example, the predefined threshold for a particle with a transparency of more than 80% for visible light can be in the range of 5 µm to 20 µm or more. Conversely, the threshold for a particle with a transparency of less than 20% for visible light can, for example, be in the range of 1 µm to 20 µm or more.

[0048] Between particle 108 and the surface 106 of the optically active layer structure 104, at least one cavity 110, for example in the form of a blind hole, is formed. The cavity 110 is formed by the fact that the particle 108 has an approximately spherical shape, i.e., it is not flat or rod-shaped, as in Fig. Figure 1 illustrates this. The cavity 110 is, in essence, an accessible or exposed space between the particle 108 and the optically active layer structure 104.

[0049] A buffer structure 114 is formed in direct contact between particle 108 and the surface 106 of the optically active layer structure 104. The buffer structure 114 essentially fills the cavity 110 and surrounds the particle 108. This binds the particle 108 to the surface 106 of the optically active layer structure 104 in the region of the cavity 110. The buffer structure 114 thus binds the particle 108 more strongly to the position, i.e., the direct contact 112, where the particle 108 contacts the surface 106 of the optically active layer structure 104. In other words, a particle 108 enclosed or embedded in this way by the buffer structure 114 is less able to move laterally than in a conventional optoelectronic device. This makes it less likely that the particle 108 will damage the surface 106 of the optically active layer structure 104, which could otherwise lead to a total failure of the optoelectronic component.This makes the optoelectronic component more stable.

[0050] On or above the surface of the optically active layer structure 106 and the buffer structure 114, for example in direct physical contact, as in Fig. As illustrated in Figure 1, an encapsulation layer 116 is formed. The buffer structure 114 is thus encapsulated within the encapsulation layer 116. The encapsulation layer 116 surrounds the buffer layer 114 at least laterally, for example, in a ring-like fashion. Alternatively or additionally, the encapsulation layer 116 can completely enclose the buffer layer 114.

[0051] The buffer structure 114 essentially comprises or is formed from an organic material. Furthermore, the buffer structure 114 can be formed using wet chemical processes, for example, as a solution or dispersion. The material of the buffer structure 114 is dissolved in a solvent, such as an organic solvent that is readily volatile under normal conditions, for example, acetone. The solvent allows the material of the buffer structure 114 to fill the cavity 110. For example, the solvent in the solution containing the material of the buffer structure 114 lifts the particle 108. The material of the buffer structure 114 can then position itself between the particle 108 and the surface 106 of the optically active layer structure 104. Subsequently, as the solvent is withdrawn, the particle 108 settles back onto or above the surface 106 of the optically active layer structure 104.

[0052] Alternatively, the buffer structure 114 essentially comprises or is formed from an inorganic material. The inorganic buffer structure 114 can be formed, for example, by spot deposition or plasma coating, such as plasma treatment under atmospheric pressure.

[0053] To securely fix particle 108 in its position, the buffer structure 114 can be designed with a lateral dimension that is in the range of 2 to 5 times the mean diameter D of the enclosed particle 108. The buffer structure is thus locally confined to particle 108.

[0054] Fig. Figure 2 shows a schematic cross-sectional view of an optoelectronic component 1 according to various embodiments. For the sake of simplicity, the particle and the buffer structure are omitted. Fig. 2 are not shown, although they are included.

[0055] The optoelectronic component 100 of the Fig. 1 corresponds to an embodiment of the in Fig. 2 and Fig. 3A, Fig. 3B, Fig. 3C illustrates the optoelectronic component in more detail.

[0056] The in Fig. The optically active layer structure 104 illustrated in Figure 1 can be or have one or more of the layers or structures 12, 20, 21, 22, 23, 24, 36, 38 described in more detail below.

[0057] The optoelectronic component 1 has a substrate 12. The substrate 12 can be translucent or transparent. The substrate 12 serves as a support for electronic elements or layers, for example, light-emitting elements. The substrate 12 can be made of, for example, plastic, metal, glass, quartz, and / or a semiconductor material. Furthermore, the substrate 12 can be made of, or consist of, a plastic film or a laminate with one or more plastic films. The substrate 12 can be mechanically rigid or mechanically flexible.

[0058] An optically active layer structure is formed on the support 12. This optically active layer structure comprises a first electrode layer 14, which includes a first contact section 16, a second contact section 18, and a first electrode 20. The support 12 with the first electrode layer 14 can also be referred to as the substrate. A first barrier layer (not shown), for example, a first barrier thin film, can be formed between the support 12 and the first electrode layer 14.

[0059] The first electrode 20 is electrically isolated from the first contact section 16 by means of an electrical insulation barrier 21. The second contact section 18 is electrically coupled to the first electrode 20 of the optoelectronic layer structure. The first electrode 20 can be configured as an anode or as a cathode. The first electrode 20 can be translucent or transparent. The first electrode 20 comprises an electrically conductive material, for example, a metal and / or a transparent conductive oxide (TCO), or a stack of multiple layers comprising metals or TCOs. The first electrode 20 can, for example, comprise a stack of layers combining a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.The first electrode 20 can alternatively or additionally comprise: networks of metallic nanowires and particles, for example made of Ag, networks of carbon nanotubes, graphene particles and layers and / or networks of semiconducting nanowires.

[0060] Above the first electrode 20, an optically functional layer structure, for example an organic functional layer structure 22, of the optoelectronic layer structure is formed. The organic functional layer structure 22 can, for example, have one, two, or more sublayers. For example, the organic functional layer structure 22 can have a hole injection layer, a hole transport layer, an emitter layer, an electron transport layer, and / or an electron injection layer. The hole injection layer serves to reduce the band gap between the first electrode and the hole transport layer. In the hole transport layer, the hole conductivity is greater than the electron conductivity. The hole transport layer serves to transport the holes. In the electron transport layer, the electron conductivity is greater than the hole conductivity. The electron transport layer serves to transport the electrons.The electron injection layer serves to reduce the band gap between the second electrode and the electron transport layer. Furthermore, the organic functional layer structure 22 can comprise one, two, or more functional layer structure units, each of which includes the aforementioned sublayers and / or further intermediate layers.

[0061] A second electrode 23 of the optoelectronic layer structure is formed above the organic functional layer structure 22 and is electrically coupled to the first contact section 16. The second electrode 23 can be configured according to one of the embodiments of the first electrode 20, whereby the first electrode 20 and the second electrode 23 can be identical or different. The first electrode 20 serves, for example, as the anode or cathode of the optoelectronic layer structure. Correspondingly to the first electrode, the second electrode 23 serves as the cathode or anode of the optoelectronic layer structure.

[0062] The optically active layer structure is an electrically and / or optically active region. The active region is, for example, the area of ​​the optoelectronic device 10 in which electric current flows to operate the optoelectronic device 10 and / or in which electromagnetic radiation is generated or absorbed. A getter structure (not shown) can be arranged on or above the active region. The getter layer can be translucent, transparent, or opaque. The getter layer can comprise or be formed from a material that absorbs and binds substances that are harmful to the active region.

[0063] An encapsulation layer 24 of the optically active layer structure is formed over the second electrode 23 and partially over the first contact section 16 and partially over the second contact section 18. This encapsulation layer 24 encapsulates the optically active layer structure. The encapsulation layer 24 can be configured as a second barrier layer, for example, as a second barrier thin film. The encapsulation layer 24 can also be referred to as thin-film encapsulation. The encapsulation layer 24 forms a barrier against chemical impurities and atmospheric substances, particularly water (moisture) and oxygen. The encapsulation layer 24 can be configured as a single layer, a stack of layers, or a layered structure.The encapsulation layer 24 can comprise or be formed from: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, poly(p-phenylene terephthalamide), nylon 66, as well as mixtures and alloys thereof. Optionally, the first barrier layer on the support 12 can be configured corresponding to an embodiment of the encapsulation layer 24.

[0064] In the encapsulation layer 24, a first recess is formed above the first contact section 16, and a second recess is formed above the second contact section 18. A first contact area 32 is exposed in the first recess, and a second contact area 34 is exposed in the second recess. The first contact area 32 serves to electrically contact the first contact section 16, and the second contact area 34 serves to electrically contact the second contact section 18.

[0065] An adhesive layer 36 is formed above the encapsulation layer 24. The adhesive layer 36 comprises, for example, an adhesive, such as a laminating adhesive, a lacquer, and / or a resin. The adhesive layer 36 may, for example, contain particles that scatter electromagnetic radiation, such as light-scattering particles.

[0066] A cover body 38 is formed above the adhesive layer 36. The adhesive layer 36 serves to attach the cover body 38 to the encapsulation layer 24. The cover body 38 comprises, for example, plastic, glass, and / or metal. For example, the cover body 38 can be made primarily of glass and have a thin metal layer, such as a metal foil, and / or a graphite layer, such as a graphite laminate, on the glass body. The cover body 38 serves to protect the conventional optoelectronic device 1, for example, from external mechanical forces. Furthermore, the cover body 38 can serve to distribute and / or dissipate heat generated in the conventional optoelectronic device 1.For example, the glass of the cover body 38 can serve as protection against external influences and the metal layer of the cover body 38 can serve to distribute and / or dissipate the heat generated during the operation of the conventional optoelectronic component 1.

[0067] Fig. Figures 3A, B, and C show schematic cross-sectional views of an optoelectronic component according to various embodiments.

[0068] The in the Fig. 3A, Fig. 3B, Fig. Figures 300, 310, and 320, illustrated in more detail in Section 3C, correspond to exemplary embodiments of the optoelectronic components described above.

[0069] The in Fig. The optically active layer structure 104 illustrated in Figure 1 can be or have one or more of the layers or structures 12, 20, 21, 22, 23, 24, 36, 38 described in more detail below.

[0070] As in Fig. As illustrated in Figure 3A, the optically active layer structure has, for example, an electrode 23. The electrode 23 has a surface, and the surface of the electrode 23 corresponds, at least in the area of ​​direct contact between the particle 108 and the surface of the optically active layer structure, to the surface of the optically active layer structure.

[0071] Furthermore, in Fig. Figure 3A illustrates that the optoelectronic component has several particles 108 (in Fig. 3A shows two particles 108 on the surface of the electrode 23). The encapsulation layer 116 of the Fig. 1 is in the embodiment of the Fig. 3B, for example, the encapsulation layer 24 of an embodiment of the Fig. 2. The optoelectronic component also has several buffer structures 114.

[0072] The multiple particles 108 in Fig. 3A each have a mean diameter larger than the specified threshold. Each particle 108 is enclosed by a buffer structure, as shown in Fig. 1 is described in more detail.

[0073] The optically active layer structure with the buffer structure can be considered a first surface with a first roughness. The encapsulation layer 24 is formed on the first surface and has a second surface opposite the first surface. The second surface has a second roughness. The encapsulation layer can be configured such that the second roughness is lower than the first roughness, as shown in Fig. Figure 3A illustrates the left particle 108. In other words, the encapsulation layer 24 can have a planarizing effect with respect to particle 108 and the buffer structure 114. Alternatively or additionally, for example next to a planarized particle – as in Fig. As illustrated in 3A, the encapsulation layer may exhibit a topographic elevation above the buffer structure, as shown in Fig. Figure 3A illustrates the right-hand particle 108. The second roughness can also be smaller than the first roughness in this area. In other words, a flat surface of the encapsulation layer 24 is optional in the area of ​​the buffer structure 114.

[0074] As in Fig. As illustrated in Figure 3B, the optically active layer structure has, for example, a thin-film encapsulation structure 24A or an electrode 23. The thin-film encapsulation structure 24A is, for example, an encapsulation layer 24 of a multilayer encapsulation structure (24A, 24B), as shown in Figure 3B. Fig. 2 is described in more detail. The thin-film encapsulation structure 24A has a surface. The surface of the thin-film encapsulation structure 24A corresponds, at least in the area of ​​direct contact between the particle 108 and the surface of the optically active layer structure, to the surface of the optically active layer structure. In this case, the buffer structure 114 is formed on the surface of the thin-film encapsulation structure 24A. Another thin-film encapsulation structure 24B surrounds the buffer structure 114, as described in the context of the encapsulation layer 116 in Fig. 1 is described.

[0075] Furthermore in Fig. Figure 3B illustrates that the optoelectronic component can have further particles 312, 314 316 which are not or optionally surrounded by a buffer structure 114.

[0076] For example, a buffer structure 114 is optional if the respective particle 316 has a mean diameter that is smaller than the specified threshold. In this case, the encapsulation layer 116 or the further thin-film encapsulation structure 24B directly encloses the at least one particle 316.

[0077] For example, a buffer structure 114 is optional if the respective particle 312 on the surface of the optically active layer structure has a predefined optical property or a predefined material property. In this case, the encapsulation layer 116 or the further thin-film encapsulation structure 24B directly encloses the at least one particle 312. For example, a buffer structure 114 is optional if the particle 312 has a transparency of more than 80% for visible light and / or a refractive index greater than a predefined refractive index. Alternatively or additionally, a buffer structure 114 is optional if the particle 312 has a predefined material property, such as a low degree of hardness.

[0078] For example, a buffer structure 114 is optional if the respective particle 314 is arranged at a predetermined distance above the surface of the optically active layer structure, i.e., if the particle 314 does not rest on the surface of the optically active layer structure. In this case, the encapsulation layer 116 or the further thin-film encapsulation structure 24B directly encloses the at least one particle 314.

[0079] As in Fig. As illustrated in Figure 3C, the optically active layer structure can have a thin-film encapsulation structure with at least one barrier layer. The barrier layer can include a further particle 318 embedded by means of another buffer structure 114.

[0080] Fig. Figure 4 shows a flowchart of an embodiment of a method 400 for manufacturing an optoelectronic component according to various embodiments.

[0081] The optoelectronic component is designed according to an embodiment described above.

[0082] Method 400 features the formation of an optically active layer structure with a surface (S1).

[0083] The optically active layer structure is formed with an electrode. The electrode has a surface, and the surface of the electrode corresponds, at least in the area of ​​direct contact between the particle and the surface of the optically active layer structure, to the surface of the optically active layer structure. Alternatively or additionally, the optically active layer structure is formed with a thin-film encapsulation structure, wherein the thin-film encapsulation structure has a surface, and the surface of the thin-film encapsulation structure corresponds, at least in the area of ​​direct contact between the particle and the surface of the optically active layer structure, to the surface of the optically active layer structure.Alternatively or additionally, the thin-film encapsulation structure is formed from several stacked barrier layers, wherein one of the barrier layers has a surface and the surface of the barrier layer corresponds to the surface of the optically active layer structure, at least in the area of ​​direct contact between the particle and the optically active layer structure. For example, the thin-film encapsulation structure is formed with at least one barrier layer that surrounds or embeds another particle embedded by means of a further buffer structure.

[0084] Method 400 further features the detection of at least one particle with a mean diameter greater than a predefined threshold. The particle is located directly on the surface of the optically active layer structure.

[0085] During detection S2, at least one particle with a mean diameter smaller than the specified threshold can be detected. This at least one particle is directly enclosed by the encapsulation layer; that is, a buffer structure optionally surrounds this particle.

[0086] At least one particle can be detected using an optical method, for example an automated optical method.

[0087] The specified threshold has a value in the range of approximately 1 µm to approximately 20 µm. The specified threshold can depend on at least one predefined property of the particle. On the surface of the optically active layer structure, multiple particles with a mean diameter larger than the specified threshold can be detected, forming multiple buffer structures, each containing one particle.

[0088] Furthermore, method 400 features the formation of a buffer structure S3 in direct contact with the particle and the surface of the optically active layer structure. The buffer structure is formed such that it essentially fills a cavity formed between the particle and the surface of the optically active layer structure and surrounds the particle.

[0089] The buffer structure can be formed using a serial process, for example inkjet printing or directed plasma deposition.

[0090] The buffer structure is essentially formed from an organic material. For example, the buffer structure can be formed using wet chemical processes or by means of plasma spraying under atmospheric conditions, also known as open air plasma vapor deposition.

[0091] The buffer structure can be designed with a lateral dimension that is in the range of 2 to 5 times the mean diameter of the enclosed particle.

[0092] Furthermore, method 400 features the formation of an encapsulation layer S4 on or above the surface of the optically active layer structure and the buffer structure. The buffer structure is embedded in the encapsulation layer.

[0093] The optically active layer structure with the buffer structure can be considered a first surface with a first roughness. The encapsulation layer can be formed with a second surface with a second roughness, the second roughness being lower than the first. The second surface can be opposite the first surface.

[0094] The encapsulation layer can be designed in such a way that the buffer layer is enclosed at least laterally, for example in a ring shape, or completely enclosed.

[0095] The encapsulation layer can be formed by means of a gas phase deposition, for example a chemical gas phase deposition.

[0096] The process steps S1, S2, S3 and S4 are carried out in this order, for example, as shown in Fig. 4 is illustrated.

[0097] Fig. Figure 5 shows a schematic representation of a device for carrying out a method for manufacturing an optoelectronic component according to various examples.

[0098] The procedure can be performed in Fig. 4 correspond to the embodiment described and the optoelectronic component is in Fig. 1, Fig. 2, Fig. 3A, Fig. 3B or Fig. 3C described embodiment.

[0099] The device 500 has a first component unit BE1 for forming the optically active layer structure.

[0100] The device 500 further comprises a second component unit BE2 for capturing the at least one particle.

[0101] The device 500 has a third component unit BE3 for forming the buffer structure.

[0102] The device 500 also features a fourth component unit BE4 for forming the encapsulation layer.

[0103] Furthermore, the device has a transport section 510, which can have several sections 510A, 510B, 510C, 510D, 510E. Sections 510A, 510B, 510C, 510D, 510E connect, for example, the individual component units. The transport section 510 is generally used to transport a substrate, for example, substrate 102. Fig. 1 or the carrier 12 in Fig. 2, between the first, second, third and fourth component units BE1, BE2, BE3, BE4. The substrate can be provided by a section 510A and, after the formation of the encapsulation layer, transported further by a further section 510E.

[0104] The transport section 510 may have a housing. The housing is gas-tight so that no further external particles enter the space for carrying out process steps S1, S2, S3, S4 during the execution of the process (see Fig. 4) can be reached.

[0105] The individual component units BE1, BE2, BE3, BE4 for forming the optoelectronic component can be arranged in a common device with a housing 520. Alternatively, the individual component units BE1, BE2, BE3, BE4 can be implemented in separate, distinct devices or systems, each with its own housing. In this case, the substrate 102 / 12 is transported between the individual component units BE1, BE2, BE3, BE4. This transport can be carried out, for example, by means of a conveyor belt, a gripper arm, and a container, which together can be considered a transport route 510 or, alternatively, sections 510A-E. The housing 520 can, for example, take the form of a container in which one or more substrates 102, 12 are transported, or it can take the form of an isolated manufacturing environment, such as a cleanroom or gray room.

[0106] In an embodiment 1, an optoelectronic device is provided comprising: an optically active layer structure with a surface; at least one particle with a mean diameter greater than a predetermined threshold, wherein the particle is arranged directly on the surface of the optically active layer structure, and wherein the particle has a shape such that a cavity is formed between the particle and the surface of the optically active layer structure; a buffer structure in direct contact with the particle and the surface of the optically active layer structure, wherein the buffer structure is configured to substantially fill the cavity and enclose the particle; and an encapsulation layer on or above the surface of the optically active layer structure and the buffer structure, wherein the buffer structure is embedded in the encapsulation layer.

[0107] In embodiment 2, embodiment 1 optionally features that the specified threshold has a value in a range of approximately 1 µm to approximately 20 µm.

[0108] In an embodiment 3, embodiment 1 or 2 optionally features that the specified threshold value depends on at least one specified property of the particle, for example, its transparency.

[0109] In an embodiment 4, embodiments 1 to 3 optionally feature that the optically active layer structure has an electrode, wherein the electrode has a surface and the surface of the electrode corresponds to the surface of the optically active layer structure at least in the area of ​​direct contact of the particle with the surface of the optically active layer structure.

[0110] In an embodiment 5, embodiments 1 to 3 optionally feature that the optically active layer structure has a thin-film encapsulation structure, wherein the thin-film encapsulation structure has a surface and the surface of the thin-film encapsulation structure corresponds to the surface of the optically active layer structure at least in the area of ​​direct contact of the particle with the surface of the optically active layer structure.

[0111] In an embodiment 6, embodiment 5 optionally features the thin-film encapsulation structure having several barrier layers, wherein one barrier layer of the several barrier layers has a surface and the surface of the barrier layer corresponds to the surface of the optically active layer structure at least in the area of ​​direct contact of the particle with the surface of the optically active layer structure.

[0112] In an embodiment 7, embodiment 5 or 6 optionally features that the thin-film encapsulation structure has at least one barrier layer that encloses a further particle embedded by means of a further buffer structure.

[0113] In an embodiment 8, embodiments 1 to 7 optionally feature that the optically active layer structure with the buffer structure has a first surface with a first roughness and the encapsulation layer has a second surface with a second roughness, wherein the second roughness is less than the first roughness.

[0114] In an embodiment 9, embodiments 1 to 8 optionally have several particles with a mean diameter that is each larger than the specified threshold, and several buffer structures, wherein each particle is enclosed by a buffer structure.

[0115] In an embodiment 10, embodiments 1 to 9 optionally further include at least one particle with a mean diameter that is smaller than the specified threshold, wherein the encapsulation layer directly encloses this at least one particle.

[0116] In an embodiment 11, embodiments 1 to 9 optionally feature that the buffer structure essentially comprises or is formed from an organic material.

[0117] In an embodiment 12, embodiments 1 to 10 optionally feature that the buffer structure is formed using wet chemical methods.

[0118] In an embodiment 13, embodiments 1 to 12 optionally feature that the buffer structure has a lateral dimension which is in the range of 2 to 5 times the mean diameter of the enclosed particle.

[0119] In an embodiment 14, embodiments 1 to 13 optionally feature that the encapsulation layer surrounds the buffer layer at least laterally, for example in a ring shape.

[0120] In an embodiment 15, embodiments 1 to 14 optionally feature that the encapsulation layer completely surrounds the buffer layer.

[0121] In another embodiment 16, a method for manufacturing an optoelectronic component is provided.The method comprises: forming an optically active layer structure with a surface; capturing at least one particle with a mean diameter greater than a predetermined threshold, wherein the particle is positioned directly on the surface of the optically active layer structure; forming a buffer structure in direct contact with the particle and the surface of the optically active layer structure, wherein the buffer structure is configured to substantially fill a cavity formed between the particle and the surface of the optically active layer structure and to enclose the particle; and forming an encapsulation layer on or above the surface of the optically active layer structure and the buffer structure, wherein the buffer structure is embedded in the encapsulation layer.

[0122] In an embodiment 17, embodiment 16 optionally features that the specified threshold has a value in a range of approximately 1 µm to approximately 20 µm.

[0123] In an embodiment 18, embodiment 16 or 17 optionally features that the specified threshold value depends on at least one specified property of the particle, for example, its transparency.

[0124] In an embodiment 19, embodiments 16 to 18 optionally feature that the optically active layer structure is formed with an electrode, wherein the electrode has a surface and the surface of the electrode corresponds to the surface of the optically active layer structure at least in the area of ​​direct contact of the particle with the surface of the optically active layer structure.

[0125] In an embodiment 20, embodiments 16 to 18 optionally feature that the optically active layer structure is formed with a thin-film encapsulation structure, wherein the thin-film encapsulation structure has a surface and the surface of the thin-film encapsulation structure corresponds to the surface of the optically active layer structure at least in the area of ​​direct contact of the particle with the surface of the optically active layer structure.

[0126] In an embodiment 21, embodiments 16 to 20 optionally feature that the thin-film encapsulation structure is formed from several stacked barrier layers, wherein one barrier layer of the several barrier layers has a surface and the surface of the barrier layer corresponds to the surface of the optically active layer structure at least in the area of ​​direct contact of the particle with the surface of the optically active layer structure.

[0127] In an embodiment 22, embodiments 16 to 21 optionally feature that the thin-film encapsulation structure is formed with at least one barrier layer that surrounds or embeds a further particle embedded by means of a further buffer structure.

[0128] In an embodiment 23, embodiments 16 to 22 optionally feature that the optically active layer structure with the buffer structure has a first surface with a first roughness and the encapsulation layer has a second surface with a second roughness, wherein the second roughness is less than the first roughness.

[0129] In an embodiment 24, embodiments 16 to 23 optionally feature that several particles with a mean diameter, each larger than the specified threshold, are detected on the surface of the optically active layer structure, and several buffer structures are formed, each containing a particle enclosed by a buffer structure.

[0130] In an embodiment 25, embodiment 16 to 24 optionally further includes the capture of at least one particle with a mean diameter that is smaller than the specified threshold, wherein this at least one particle is directly enclosed by means of the encapsulation layer.

[0131] In an embodiment 26, embodiments 16 to 25 optionally feature that the buffer structure essentially comprises or is formed from an organic material.

[0132] In an embodiment 27, embodiments 16 to 26 optionally feature that the buffer structure is formed using wet chemical processes.

[0133] In an embodiment 28, embodiments 16 to 27 optionally feature that the buffer structure is formed with a lateral dimension that is in a range of 2 to 5 times the mean diameter of the enclosed particle.

[0134] In an embodiment 29, embodiments 16 to 28 optionally feature that the encapsulation layer is designed such that the buffer layer is enclosed at least laterally, for example in a ring shape.

[0135] In an embodiment 30, embodiment 16 to 29 optionally features the encapsulation layer being designed in such a way that the buffer layer is completely enclosed.

[0136] In an embodiment 31, embodiments 16 to 30 optionally feature that the at least one particle is detected by means of an optical method.

[0137] In an embodiment 32, embodiments 16 to 31 optionally feature that the buffer structure is formed by means of a serial process, for example inkjet printing or directed plasma deposition.

[0138] In an embodiment 33, embodiments 16 to 32 optionally feature that the encapsulation layer is formed by means of a gas phase deposition, for example a chemical gas phase deposition.

[0139] In another example 34, a device for carrying out a method according to one of embodiments 16 to 33 is described. The device comprises: a first component unit for forming the optically active layer structure; a second component unit for capturing the at least one particle; a third component unit for forming the buffer structure; and a fourth component unit for forming the encapsulation layer; and a transport section, wherein the transport section is configured for transporting a substrate between the first, second, third, and fourth component units; and wherein the transport section has a housing that is gas-tight.

[0140] For example, the optoelectronic component can be designed as an organic light-emitting device, such as an organic light-emitting diode (OLED), an organic display device, or an organic lamp. An organic lamp can also be macropixelated, meaning it has multiple pixels, each with an optically active area ranging from several micrometers to several centimeters.

Claims

[1] Optoelectronic component (1, 100, 300, 310, 320), comprising: an optically active layer structure (104) with a surface (106); at least one particle (108) with a mean diameter (D) that is larger than a specified threshold, wherein the particle (108) is arranged directly on the surface (106) of the optically active layer structure (104), and wherein the particle (108) has a shape such that a cavity (110) is formed between the particle (108) and the surface (106) of the optically active layer structure (104); a buffer structure (114) in direct contact with the particle (108) and the surface (106) of the optically active layer structure (104), wherein the buffer structure (114) is configured such that it substantially fills the cavity (110) and surrounds the particle (108); and an encapsulation layer (116) on or above the surface (106) of the optically active layer structure (104) and the buffer structure (14), wherein the buffer structure (114) is embedded in the encapsulation layer (116), wherein the buffer structure (114) is locally confined to the particle (108) and has a lateral dimension in the range of 2 to 5 times the mean diameter (D) of the enclosed particle (108). [2] Optoelectronic device (1, 100, 300, 310, 320) according to claim 1, wherein the specified threshold has a value in a range from approximately 1 µm to approximately 20 µm. [3] Optoelectronic component (1, 100, 300, 310, 320) according to claim 1 or 2, wherein the predetermined threshold value depends on at least one predetermined property of the particle (108), preferably the transparency. [4] Optoelectronic device (1, 100, 300, 310, 320) according to any one of claims 1 to 3, wherein the optically active layer structure (104) has an electrode (20, 23), wherein the electrode (20, 23) has a surface and the surface of the electrode (20, 23) corresponds at least in the area of ​​a direct contact (112) of the particle (108) with the surface (106) of the optically active layer structure (104). [5] Optoelectronic device (1, 100, 300, 310, 320) according to any one of claims 1 to 3, wherein the optically active layer structure (104) has a thin-film encapsulation structure (24), wherein the thin-film encapsulation structure (24) has a surface and the surface of the thin-film encapsulation structure (24) corresponds at least in the area of ​​direct contact (112) of the particle (108) with the surface (106) of the optically active layer structure (104). [6] Optoelectronic device (1, 100, 300, 310, 320) according to claim 5, wherein the thin-film encapsulation structure (24A, 24B) has several barrier layers, wherein one barrier layer (24A) of the several barrier layers (24A, 24B) has a surface and the surface of the barrier layer (24A) corresponds at least in the area of ​​a direct contact (112) of the particle (108) with the surface (106) of the optically active layer structure (104). [7] Optoelectronic device (1, 100, 300, 310, 320) according to one of claims 5 or 6, wherein the thin-film encapsulation structure (24) has at least one barrier layer (24B) enclosing a further particle (314) embedded by means of a further buffer structure (114). [8] Optoelectronic device (1, 100, 300, 310, 320) according to any one of claims 1 to 7, comprising several particles (108) with a mean diameter (D) which is each larger than the specified threshold value, and several buffer structures (114), wherein each particle (108) is enclosed by a buffer structure (114). [9] Optoelectronic component (1, 100, 300, 310, 320) according to any one of claims 1 to 8, further comprising: at least one particle (316) with a mean diameter (D) that is smaller than the specified threshold, wherein the encapsulation layer (116) directly encloses this at least one particle (316). [10] Optoelectronic device (1, 100, 300, 310, 320) according to any one of claims 1 to 9, wherein the buffer structure (114) substantially comprises or is formed from an organic material. [11] Method for manufacturing an optoelectronic device comprising the method: • Forming (S1) an optically active layer structure (104) with a surface (106); • Detecting (S2) at least one particle (108) with a mean diameter (D) that is larger than a predetermined threshold, wherein the particle (108) is located directly on the surface (106) of the optically active layer structure (104); • Forming (S3) a buffer structure (114) in direct contact (112) with the particle (108) and the surface (106) of the optically active layer structure (104), wherein the buffer structure (114) is formed such that it substantially fills a cavity (110) formed between the particle (108) and the surface (106) of the optically active layer structure (104) and surrounds the particle (108); and • Forming (S4) an encapsulation layer (116) on or above the surface (106) of the optically active layer structure (104) and the buffer structure (114), wherein the buffer structure (114) is embedded in the encapsulation layer (116) and an optoelectronic device according to any one of claims 1 to 10 is produced. [12] Method according to claim 11, wherein the buffer structure (114) is formed by wet chemical means. [13] Method according to claim 11 or 12, wherein the at least one particle (108) is detected by an optical method. [14] Method according to any one of claims 11 to 13, wherein the buffer structure (114) is formed by a serial method, preferably inkjet printing or directed plasma deposition. [15] Method according to any one of claims 11 to 14, wherein the encapsulation layer (116) is formed by means of a gas phase deposition, preferably a chemical gas phase deposition.

Images