ORGANIC OPTOELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING AN ORGANIC OPTOELECTRONIC COMPONENT

Abstract

comprising an organic optoelectronic component (100, 300): - a substrate (110, 310) with an optically active region (170) and an optically inactive region (160a, 160b, 360a, 360b) arranged next to the optically active region, wherein at least one electrode is arranged on or above the substrate (110, 310) in the optically active region (170) and at least one contact pad (140, 340) is arranged on or above the substrate (110, 310) in the optically inactive region (160a, 160b, 360a, 360b), wherein the at least one electrode is connected to the at least one contact pad (140, 340), wherein the optically inactive region (160a, 160b, 360a, 360b) is free of the at least one electrode, - a coating layer (150, 350) on or above the substrate (110, 310), wherein the coating layer (150, 350) is configured to absorb a predetermined electromagnetic radiation (180, 380) with an intensity in a wavelength range, - at least one mirror structure (130a, 334) arranged in the optically inactive region (160a, 160b, 360a, 360b) on or above the substrate (110, 310), wherein the mirror structure (130a, 334) has a reflectance with respect to the wavelength range of the specified electromagnetic radiation (180, 380) of at least 85%, wherein the mirror structure (130a, 334) and the coating layer (150, 350) are arranged such that the specified electromagnetic radiation (180, 380) is incident on the mirror structure (130a, 334) from at least one direction of incidence through the coating layer (150, 350), wherein the mirror structure (130a, 334) is arranged between the substrate (110, 310) and the coating layer (150, 350), wherein the organic optoelectronic device (100, 300) has an encapsulation layer (130, 332) arranged between the substrate (110, 310) and the coating layer (150, 350), wherein the mirror structure (130a, 334) is arranged between the encapsulation layer (130, 332) and the coating layer (150, 350), and wherein the organic optoelectronic device (100, 300) is a light-emitting device with an organic light-emitting layer stack arranged between the at least one electrode and a second electrode, wherein light with a further predetermined wavelength range can be emitted from the organic light-emitting layer stack, wherein the mirror structure (130a, 334) has a reflectance with respect to the light emitted by the organic light-emitting layer stack which is less than approximately 20%.

Description

[0001] The invention relates to an organic optoelectronic component and a method for manufacturing an organic optoelectronic component.

[0002] Organic-based optoelectronic components, such as organic light-emitting components, are increasingly being used in vehicle lighting, aircraft lighting, display lighting, and general lighting, for example as area light sources.

[0003] The following publications concern organic optoelectronic components: DE 10 2015 118 717 A1, DE 10 2013 106 992 A1, DE 10 2014 119 538 A1.

[0004] As in Fig. As illustrated in Figure 5, an organic optoelectronic device has a multitude of (organic) layers. For example, these (organic) layers are a substrate 510, an organic optoelectronic layer stack 520 with an electrode 522 connected to a contact pad 540, an encapsulation layer 532, and a coating layer 524. Conventionally, parts of the (organic) layers, for example, the coating layer in the optically inactive region 560a, 560b, for example, at the edge region 560b of the optoelectronic device, are removed during the fabrication of the organic optoelectronic device by ablation using localized laser radiation 580, for example, to expose contact areas and / or singulation grooves of the optoelectronic device.

[0005] Fig. Figure 6A illustrates the transmittance 604 of a conventional protective layer 524 as a function of the wavelength 602 of electromagnetic radiation. For laser radiation with a wavelength of 355 nm, the protective layer 524 exhibits a transmittance of approximately 85%. From a wavelength of approximately 400 nm, the protective layer 524 exhibits a transmittance of approximately 100%. In other words, the protective layer 524 is essentially transparent to laser radiation 580 with a wavelength range from approximately 400 nm to approximately 1200 nm.

[0006] Fig. Figure 6B shows the transmittance of 604 of a conventional stack in the optically inactive region of the optoelectronic device with the in Fig. The protective layer 524 shown in Figure 6A and an encapsulation layer 532 arranged below the protective layer 524 with respect to the direction of the laser radiation are shown as a function of the wavelength of the laser radiation 602. For laser radiation with a wavelength of 355 nm, the transmittance of the laser radiation through the stack is approximately 0%. From the graph in Fig. Figure 6B also shows that the laser radiation is mainly absorbed by the encapsulation layer 532.

[0007] Fig. Figure 7A shows the reflectance 704 of a conventional stack in the optically inactive region of the optoelectronic device with a conventional encapsulation layer 532 arranged on a soda lime glass substrate 510 as a function of the wavelength 702 of the electromagnetic radiation. Fig. Figure 7B shows the reflectance 704 of a conventional encapsulation layer 532 arranged on a contact pad 540 as a function of the wavelength 702 of electromagnetic radiation. Fig. 7A and Fig. Figure 7B shows that a conventional encapsulation layer 532 has a reflectance of less than 20% at wavelengths up to 355 nm. Furthermore, in the wavelength range shown, the encapsulation layer 532 has a reflectance of less than 90% at wavelengths above 355 nm.

[0008] In a conventional organic optoelectronic component, 580 is produced using localized laser radiation due to the high transmission ( Fig. 6A, Fig. 6B) of the protective layer 524 with respect to the laser radiation 580 and the low absorption of the laser radiation 580 in the encapsulation layer 532, a removal of the encapsulation layer 532 instead of - as in Fig. Figure 5 illustrates this, instead of the desired removal of the protective layer 524. This leads to damage, for example, pronounced, undefined cracks, fractures, and layer delamination, in the encapsulation layer 532 and an additional lifting of the protective layer 524, i.e., the surface of the protective layer becomes uneven (see Figure 5). Fig. 5, Fig. 590).

[0009] However, it is desirable to provide an organic, optoelectronic device that has an area which, when exposed to electromagnetic radiation, such as laser radiation, remains free or substantially free from unwanted damage in the irradiated area.

[0010] The object of the invention is to provide an organic optoelectronic component designed to reduce or avoid damage caused by electromagnetic radiation in conventional organic optoelectronic components.

[0011] Another task is to provide a method for manufacturing an optoelectronic component that enables cost-effective and simple production of the optoelectronic component described above.

[0012] An organic optoelectronic device is provided. This device comprises a substrate with an optically active region and an optically inactive region adjacent to it. At least one electrode is arranged on or above the substrate in the optically active region, and at least one contact pad is arranged on or above the substrate in the optically inactive region. The at least one electrode is electrically connected to the at least one contact pad. The second region is free of the at least one electrode. The organic optoelectronic device also has a coating layer on or above the substrate. This coating layer is configured to absorb a predefined electromagnetic radiation range.Furthermore, the organic optoelectronic component has at least one mirror structure arranged on or above the substrate in the optically inactive region. The mirror structure has a reflectance of at least 85% with respect to the wavelength range of the specified electromagnetic radiation. Moreover, the mirror structure and the coating layer are arranged relative to each other such that the specified electromagnetic radiation is incident on the mirror structure from at least one direction through the coating layer.

[0013] The organic, optoelectronic component with its mirror structure ensures that the encapsulation layer and / or the contact pad remain undamaged during an ablation process of the coating layer using electromagnetic radiation, such as laser radiation. This reduces or prevents cracking in the encapsulation layer and / or the contact pad, as well as subsequent delamination of the encapsulation layer and / or the contact pad. In other words, the mirror structure acts as a shield for the encapsulation layer and / or the contact pad from the applied electromagnetic radiation during its application to the coating layer.

[0014] The mirror structure is positioned between the substrate and the coating layer.

[0015] The organic optoelectronic device has an encapsulation layer arranged between the substrate and the coating layer, with the mirror structure arranged between the encapsulation layer and the coating layer.

[0016] This ensures that when electromagnetic radiation is applied to the surface of the organic optoelectronic device facing away from the substrate, the electromagnetic radiation only passes through the coating layer and is reflected by the mirror structure. Thus, the encapsulation layer and, if applicable, the contact pad are protected from the electromagnetic radiation or are not, or only minimally, affected by it.

[0017] In another embodiment, the organic optoelectronic device has an encapsulation layer arranged between the substrate and the coating layer, with the mirror structure arranged between the encapsulation layer and the contact pad. The mirror structure can be a second mirror structure, with the first mirror structure arranged between the encapsulation layer and the coating layer.

[0018] This is relevant, for example, when electromagnetic radiation is incident on or applied to the surface of the organic optoelectronic device facing away from the substrate, and ablation of the coating layer and removal of the first mirror structure have already occurred. In this case, this arrangement of the mirror structure between the encapsulation layer and the contact pad allows the encapsulation layer to be selectively ablated by the electromagnetic radiation, i.e., without damaging the contact pad.

[0019] In another embodiment, the organic optoelectronic device has an encapsulation layer arranged between the substrate and the coating layer, wherein the encapsulation layer is at least partially configured as the mirror structure. The encapsulation layer can be formed over the entire surface or substantially over the entire surface of the organic optoelectronic layer structure and encapsulate it. For example, only the portion of the encapsulation layer located in the optically inactive region is configured as a mirror structure.

[0020] In yet another embodiment, the mirror structure consists of a metal or a metal alloy.

[0021] In another embodiment, the mirror structure is a dielectric Bragg mirror. This enables a highly reflective mirror structure for the specified electromagnetic radiation. In other wavelength ranges, the Bragg mirror can be transparent, thus maintaining a high-quality, light-transmitting appearance of the optoelectronic component, specific to the application. Other wavelength ranges include, for example, wavelength ranges from which the specified electromagnetic radiation is unaffected, or wavelength ranges of the specified electromagnetic radiation that are not used for ablating the coating layer, i.e., secondary wavelength ranges.

[0022] In yet another embodiment, the mirror structure has several alternating thin layers of aluminum oxide and titanium oxide.

[0023] In yet another embodiment, the specified electromagnetic radiation exhibits significant intensity only in the wavelength range between 400 nm and 1500 nm.

[0024] In other words, a UV protective layer is not considered a mirror structure 130 within the meaning of the invention in various embodiments.

[0025] In the wavelength range outside of 400 nm to 1500 nm, the given electromagnetic radiation can exhibit an intensity of less than approximately 5% of the intensity of the intensity maximum in the wavelength range between 400 nm and 1500 nm. The intensity of the electromagnetic radiation outside the range of 400 nm to 1500 nm can also be described as negligible.

[0026] In yet another embodiment, the coating layer has an absorption coefficient, wherein the absorption coefficient of the coating layer with respect to the specified electromagnetic radiation is at least 15% of the incident, specified electromagnetic radiation.

[0027] In yet another embodiment, the mirror structure is further arranged in the optically active area of ​​the substrate.

[0028] This allows for easy application and / or formation of the mirror structure, as structuring or structured application of the mirror structure is optional.

[0029] The organic optoelectronic device is a light-emitting device with an organic light-emitting layer stack arranged between a first electrode and a second electrode, wherein light with a further predetermined wavelength range can be emitted from the organic light-emitting layer stack, wherein the mirror structure has a reflectance with respect to the light emitted by the organic light-emitting layer stack that is less than approximately 20%.

[0030] This is relevant, for example, when the mirror structure is formed across the entire surface or substantially across the entire surface of both the optically inactive and optically active regions. In this case, the mirror structure protects the organic optoelectronic layer stack from the specified electromagnetic radiation, while only slightly affecting or reducing the light output of the organic optoelectronic device.

[0031] A method for fabricating an organic optoelectronic device is provided. The method comprises forming a substrate with an optically active region and an optically inactive region arranged adjacent to the optically active region. At least one electrode is arranged on or above the substrate in the optically active region, and at least one contact pad is arranged on or above the substrate in the optically inactive region. The at least one electrode is electrically connected to the at least one contact pad. The method further comprises forming a coating layer on or above the substrate. The coating layer is configured to absorb a predetermined electromagnetic radiation with an intensity within a specific wavelength range. The method also comprises forming at least one mirror structure arranged on or above the substrate in the optically inactive region.The mirror structure has a reflectance of at least 85% with respect to the wavelength range of the specified electromagnetic radiation. The mirror structure and the coating layer are arranged relative to each other such that the specified electromagnetic radiation strikes the mirror structure through the coating layer from at least one direction of incidence.

[0032] An encapsulation layer is formed between the substrate and the coating layer, with the mirror structure positioned between the encapsulation layer and the coating layer. In other words, the encapsulation layer is formed on the substrate, and the coating layer is formed on top of the encapsulation layer.

[0033] In one embodiment, an encapsulation layer is formed between the substrate and the coating layer, wherein the encapsulation layer is at least partially configured as the mirror structure. In other words, the encapsulation layer is formed on the substrate, and at least a portion of the encapsulation layer is configured as a mirror structure.

[0034] Exemplary embodiments of the invention are shown in the figures and are explained in more detail below.

[0035] They show: Fig. 1 a schematic sectional view of an organic, optoelectronic component according to various embodiments; Fig. 2A-D graphs showing the reflectance of the mirror layer of an organic, optoelectronic component depending on the wavelength range of the electromagnetic radiation according to various embodiments; Fig. 3A, B a schematic top view and a schematic sectional view of an organic, optoelectronic component according to various embodiments; Fig. 4 a schematic cross-sectional view of an optoelectronic component according to various embodiments; Fig. 5 a schematic sectional view of a conventional, organic, optoelectronic component; Fig. 6A, B Graphs illustrating the transmittance of a coating layer or a mirror layer of an organic, optoelectronic component; Fig. 7A, B Graphs illustrating the reflectance of the mirror layer of an organic, optoelectronic component; and Fig. 8 a flowchart for a method for manufacturing an organic, optoelectronic component according to various embodiments.

[0036] The following detailed description refers to the accompanying drawings, which form part of this description and in which specific embodiments of the invention are shown for illustrative purposes. Since components of embodiments can be positioned in a number of different orientations, the directional terminology serves only for illustration and is in no way restrictive. It is understood that the features of the various embodiments described herein can be combined with one another unless specifically stated otherwise. In the figures, identical or similar elements are provided with identical reference numerals where appropriate.

[0037] Within the scope of this description, the terms "connected," "attached," and "coupled" are used to describe both direct and indirect connections, direct or indirect links, and direct or indirect couplings. In the figures, identical or similar elements are labeled with identical reference symbols where appropriate.

[0038] An organic optoelectronic device can be either an electromagnetic radiation emitter or an electromagnetic radiation absorber. An electromagnetic radiation absorber could be, for example, a solar cell or a photodetector. An organic electromagnetic radiation emitter can, in various embodiments, be an organic electromagnetic radiation emitting semiconductor device and / or be configured as an organic electromagnetic radiation emitting diode, an organic electromagnetic radiation emitting transistor, or an organic electromagnetic radiation emitting transistor. The radiation can be, for example, visible light, ultraviolet light, and / or infrared light.In this context, the organic electromagnetic radiation-emitting component can be designed, for example, as a light-emitting diode (LED), an organic light-emitting diode (OLED), a light-emitting transistor, or an organic light-emitting transistor. The light-emitting component can be part of an integrated circuit in various embodiments.

[0039] The organic optoelectronic device features an organic functional layer stack, also referred to as an organic functional layer structure. This structure comprises or is composed of an organic material or mixture, which is configured, for example, to generate electromagnetic radiation from an applied electric current. An organic light-emitting diode (LED) is configured as a top emitter and / or a bottom emitter. In a bottom emitter, electromagnetic radiation is emitted from the electrically active area through the substrate. In a top emitter, electromagnetic radiation is emitted from the top surface of the electrically active area and not through the substrate.

[0040] An optically active region of an electrically active region according to various embodiments is understood to be the region of the organic, optoelectronic component in which an electric current flows for the operation of the organic, optoelectronic component and in which electromagnetic radiation is generated or absorbed.

[0041] According to various embodiments, an optically inactive region is understood to be the area of ​​the organic optoelectronic component that contains the electrical contact areas, also referred to as contact pads, for the external electrical supply of the organic optoelectronic component. The areas of the organic optoelectronic component that contain the electrical busbars are not considered optically inactive regions in this sense. According to various embodiments, the optically inactive region does not overlap with the optically active region.

[0042] The term "coating layer" can, in various embodiments, refer to a structure that surrounds or encases at least part of the organic, light-emitting component. The coating layer is typically an organic layer arranged over an inorganic encapsulation layer, such as a thin-film encapsulation, barrier thin film, barrier layer, encapsulation layer, or barrier film. The coating layer protects the organic, light-emitting component from harmful mechanical environmental influences, such as impacts or bending.

[0043] The term "mirror structure" can refer, in various embodiments, to a structure that has a reflective surface. The reflective surface is, for example, configured such that light incident on the mirror structure is substantially reflected, i.e., at least 70%, relative to the intensity of the incident electromagnetic radiation when the beam strikes the mirror structure perpendicularly. The reflection can be diffuse or specular in various embodiments.

[0044] The term "reflectivity" can, in various embodiments, be understood as the ratio of the intensity reflected by the mirror structure to the intensity of electromagnetic radiation incident on the mirror structure when the electromagnetic radiation is incident perpendicularly on the mirror structure.

[0045] The term "absorption coefficient" can, in various embodiments, be understood as the ratio of the intensity of electromagnetic radiation passing through and exiting the coating layer to the intensity of electromagnetic radiation incident on the coating layer when the electromagnetic radiation strikes the mirror structure perpendicularly. In other words, the absorption coefficient is understood as the proportion of light that is absorbed by the coating layer without reflection from the mirror structure.

[0046] Fig. Figure 1 shows a schematic sectional view of an organic, optoelectronic component according to various embodiments.

[0047] In various embodiments, an organic optoelectronic component 100 is provided. The organic optoelectronic component 100 has a substrate 110 with an optically active region 170 and an optically inactive region 160a, 160b arranged adjacent to the optically active region. In the optically active region 170, at least one electrode is arranged on or above the substrate 110. In the optically inactive region 160a, 160b, at least one contact pad 140 is arranged on or above the substrate 110. The optically inactive region is free of the at least one electrode. The at least one electrode is electrically connected to the at least one contact pad 140.

[0048] The organic optoelectronic component 100 further comprises a coating layer 150 on or over the substrate 110. The coating layer 150 is formed in the optically active region 170 and in the optically inactive region 160a, 160b. In some regions, the coating layer 150 may be formed directly on the substrate 110, i.e., in physical or immediate contact. In other regions, one or more additional layers are formed between the coating layer 150 and the substrate 110. In other words, in these other regions, the coating layer 150 is formed over the substrate 110. Thus, in these other regions, the coating layer 150 is in indirect or mediated contact with the substrate 110.

[0049] The coating layer 150 is configured to absorb a specified electromagnetic radiation, for example, from a laser beam 180, with a defined wavelength range. The specified electromagnetic radiation exhibits an intensity greater than zero within this wavelength range, for example, a global or local intensity maximum. For instance, the wavelength range may contain one or more linewidths corresponding to one or more spectral lines.

[0050] Furthermore, the organic optoelectronic component 100 has at least one mirror structure 130a arranged in the optically inactive region 160a, 160b on or above the substrate 110. The mirror structure 130a has a reflectance with respect to the wavelength range of the specified electromagnetic radiation 180 of at least 85%, for example at least 95%, for example at least 98%.

[0051] The mirror structure 130a and the coating layer 150 are arranged relative to each other such that the specified electromagnetic radiation 180 is incident on the mirror structure 130a through the coating layer 150 from at least one direction of incidence. This means that the electromagnetic radiation, for example in the form of a laser beam 180, can be incident on the mirror structure 130a through the coating layer 150 in the direction of incidence. The coating layer 150 and the mirror structure 130a are accordingly unobstructed or accessible to the laser beam 180 in the direction of incidence. The direction of incidence is, for example, perpendicular to the substrate 110, as shown in Fig. 1 is illustrated.

[0052] The organic optoelectronic component with the mirror structure 130a enables the encapsulation layer 130 and / or the contact pad 140 to remain undamaged or to reduce damage during an ablation process of the coating layer 150 using electromagnetic radiation. This reduces or prevents crumbling or tearing of the encapsulation layer and / or the contact pad and subsequent delamination of the encapsulation layer and / or the contact pad. In other words, the mirror structure 130a acts as a shield for the encapsulation layer and / or the contact pad from the electromagnetic radiation during the application of electromagnetic radiation to the coating layer.

[0053] The term "substrate" is used here to mean a support structure that mechanically supports and holds together the optoelectronic component. The optoelectronic component is deposited on the substrate 110, i.e., formed on it in a sequence of layers.

[0054] The term "encapsulation layer" is understood here to mean a covering structure arranged on or over the deposited, current-carrying layers of the optoelectronic component to protect it from external contaminants and electrical short circuits. A substrate on which the optoelectronic component is deposited is not considered an encapsulation layer within the meaning of the invention.

[0055] As in Fig. As illustrated in Figure 1, the organic optoelectronic device 100 comprises a substrate 110, an encapsulation layer 130, and a coating layer 150. The substrate 110, the encapsulation layer 130, and the coating layer 150 are configured as a common substrate 110, common encapsulation layer 130, and common coating layer 150 for a first organic optoelectronic device segment 102 and a second organic optoelectronic device segment 104.

[0056] The first organic optoelectronic device segment 102 and the second organic optoelectronic device segment 104 each have an optically active region 170 and an optically inactive region 160a, 160b. In the optically active region, the first organic optoelectronic device segment 102 and the second organic optoelectronic device segment 104 each have an organic optoelectronic layer structure 120 with at least one electrode (not shown) arranged between the common substrate 110 and the common encapsulation layer 130. The organic optoelectronic layer structure 120 is described in more detail below (see, for example, [reference]). Fig. 4).

[0057] Furthermore, the first organic optoelectronic component segment 102 and the second organic optoelectronic component segment 104 have at least one contact pad 140 arranged between the substrate 110 and the encapsulation layer 130 in the optically inactive region 160a, 160b for external electrical contact. The region in which the at least one contact pad 140 is arranged can be referred to as contact region 160a.

[0058] The optically inactive region 160a, 160b also includes, for example, a singulation region 160b without a contact pad, in which the encapsulation layer 130 is in direct physical contact with the substrate 110. Singulation grooves can be formed in this singulation region 160b using the specified electromagnetic radiation, for example, laser radiation 180. The optically inactive region 160a, 160b is free or substantially free of organic optoelectronic layer structure 120. In various embodiments, the optically inactive region can include a portion of the organic optoelectronic layer structure 120, this portion being electroluminescent and emitting no or substantially no electromagnetic radiation.The part of the organic, optoelectronic layer structure 120 in the optically inactive area can, for example, serve only as an electrically conductive connecting structure between contact pad and electrode or as an electrical insulating structure.

[0059] In various embodiments, the mirror structure 130a is arranged between the substrate 110 and the coating layer 150. For example, at least a portion of the encapsulation layer 130 is configured as the mirror structure 130a. The portion of the encapsulation layer 130 configured as the mirror structure 130a is located at least in the optically inactive region, for example, in the contact region 160a and / or in the singulation region 160b. Alternatively or additionally, the portion of the encapsulation layer 130 configured as the mirror structure 130a extends, for example, into the optically active region 170. The encapsulation layer 130 can be configured entirely as a mirror structure 130a, for example, across its entire surface, between the substrate 110 and the coating layer 150. This facilitates the simple application and / or formation of the mirror structure 130a.This makes structuring or a structured application of the mirror structure 130a optional.

[0060] In various embodiments, the mirror structure 130a and / or the encapsulation layer 130 comprises or is formed from a metal, a metal oxide, a metal oxynitride, a metal nitride, or a metal alloy. The metal or the metal of the compound or alloy can be one of the following materials: aluminum, titanium, copper, silicon, molybdenum, nickel, silver, gold, chromium, magnesium, or calcium. For example, the mirror structure 130a is configured as a Bragg mirror for the specified electromagnetic radiation, for example, as a dielectric Bragg mirror. This enables a highly reflective mirror structure 130a for certain wavelengths, while the Bragg mirror remains transparent to other wavelengths. In other words, the mirror structure 130a is configured as a sequence of layers with several thin films formed alternately from different materials.The layer composition of the mirror structure 130a can be represented as follows:. 5×(Ablation wavelength4×n(Mat.A)nm+Ablation wavelength4×n(Mat.B)nm) where n(Mat. B) <n(Mat. A) where “n” is the refractive index of the respective materials and “nm” stands for nanometer.

[0061] In one embodiment, the layer composition can comprise several alternating thin layers of aluminum oxide and titanium oxide. The layer composition of the mirror structure 130a, consisting of aluminum oxide and titanium oxide, can be represented as follows: 5×(ablation wavelength10.5nm TiO2+1.7×ablation wavelength10.5nm Al2O3) where “the ablation wavelength” is the wavelength used of the specified electromagnetic radiation 180, which is incident on the coating layer 150 and the mirror layer 130 during the ablation process, and “nm” stands for nanometer.

[0062] Examples of layer compositions of the mirror structure 130a are shown in the following Table 1: Table 1: Nr Ablationswellenlänge Zusammensetzung derSpiegelstruktur 1 355 nm 5 × (34 nm TiO2 + 56 nm Al2O3) 2 532 nm 5 × (49 nm TiO2 + 84 nm Al2O3)

[0063] Here, the ablation wavelength is a wavelength, for example an intensity maximum, within the wavelength range of the given electromagnetic radiation. The wavelength range could, for example, be the linewidth of a spectral line of a laser.

[0064] Fig. 2A, Fig. 2B, Fig. 2C and Fig. 2D displays graphs about the reflectance of a surface like the one in Fig. Figure 1 describes a mirror layer with the layer compositions shown in the table, depending on the wavelength of the incident, given electromagnetic radiation. The x-axis represents the wavelength 202 of the given electromagnetic radiation 180. The y-axis represents the reflectance 204 of the mirror layer 130.

[0065] In Fig. 2A or Fig. Figure 2B illustrates the reflectance for a mirror structure 130a with composition 1 (see Table 1), which is optimized for the ablation wavelength of 355 nm, based on the contact pad ( Fig. 2A) or on soda-lime glass ( Fig. 2B). From Fig. 2A and Fig. Figure 2B shows that the mirror structure with five alternating layers of 34 nm thick aluminum oxide and 56 nm thick titanium oxide has a reflectance of over 90% at a wavelength of 355 nm.

[0066] In Fig. 2C or Fig. Figure 2D illustrates the reflectance for a mirror structure 130a with composition 2 (see Table 1), optimized for an ablation wavelength of 532 nm, based on the contact pad ( Fig. 2C) or on soda-lime glass ( Fig. 2D) is arranged. From Fig. 2C and Fig. In 2D, it is evident that the mirror structure with five alternating layers of 49 nm thick aluminum oxide and 84 nm thick titanium oxide has a reflectance of over 90% at a wavelength of 532 nm.

[0067] In various embodiments, the specified electromagnetic radiation 180 exhibits significant intensity only in the wavelength range between 400 nm and 1500 nm. In other words, the mirror structure 130a is designed to have a reflectance of at least 85% for at least one wavelength range of the specified electromagnetic radiation, which lies between 400 nm and 1500 nm. In other words, in these embodiments, the mirror structure 130a is not configured as a UV protection layer; that is, the mirror structure has a reflectance of less than 90% with respect to electromagnetic radiation with a wavelength range below 400 nm.

[0068] In various embodiments, the coating layer 150 has an absorption coefficient of at least 15% with respect to the specified electromagnetic radiation 180. For example, the absorption coefficient is between 20% and 60%.

[0069] In various embodiments, the organic optoelectronic component 100 is a light-emitting component. The organic optoelectronic component 100 has an organic, light-emitting layer stack arranged between a first electrode and a second electrode (in Fig. (1 not shown). The organic, light-emitting layer stack can emit light with a further predefined wavelength range, for example, visible light. The mirror structure 130a is designed such that it has a reflectance of less than 20% with respect to the light emitted by the organic, light-emitting layer stack. In other words, the mirror layer 130 is, for example, at least partially or substantially transparent to light emitted by the organic, optoelectronic device.This is relevant, for example, when the mirror structure 130a covers the entire area in the optically inactive region 160a, 160b and in the optically active region 170, wherein the mirror structure 130a protects the organic, optoelectronic layer structure 120 from the specified electromagnetic radiation, while not affecting or reducing the light output of the organic, optoelectronic device.

[0070] Fig. Figure 3A illustrates a schematic top view and Fig. 3B a schematic sectional view of an organic, optoelectronic component according to various embodiments.

[0071] The following describes various modifications and configurations of the organic optoelectronic device, whereby the fundamental features and functions of the organic optoelectronic device described above can be applied analogously to one of the embodiments described above. Furthermore, the features and functions described below can be applied analogously to the device described in the Fig. 1. The organic, optoelectronic component described above can be transferred or used with the component described in the Fig. The organic optoelectronic component described in section 1 can be combined with the organic optoelectronic component described in section 1. Furthermore, the described features and functionalities can be applied analogously to the component described in section 1. Fig. The 8 described methods for manufacturing the organic optoelectronic component can be transferred in an analogous manner or combined with the described organic optoelectronic component.

[0072] Fig. Figure 3A shows a top view of an organic optoelectronic device 300 and illustrates an optically inactive region arranged in the edge region of the organic optoelectronic device, comprising a mirror structure 334 and a contact pad 340. The mirror structure 334 can be configured similarly to an embodiment of the mirror structure described above. The contact pad 340 can be configured similarly to the one described in Figure 3. Fig. The contact pad 140 described in section 1 corresponds in function and design. In an optically active region arranged next to the optically inactive region, the organic optoelectronic component 300 further comprises metallizations 326, for example, consisting of chromium / aluminum / chromium layers, which can represent busbars or busbars, and an optoelectronic layer structure 324. In the optically inactive region and the optically active region, the organic optoelectronic component 300 further comprises an encapsulation layer 332, which is shown for simplified representation in Fig. 3A does not cover the contact pad 340, the metallizations 326, and the optically active area 324. In Fig. Figure 3A shows the coating layer of the organic optoelectronic component, but this is not shown. However, the coating layer can be described according to a diagram in Fig. The coating layer shown in the illustration and description should be formed.

[0073] In various embodiments, the mirror structure 334 is a structure different from the encapsulation layer 332, wherein the encapsulation layer 332 is arranged, for example, between the substrate 310 and the coating layer 350, as in Fig. 3A is illustrated. Alternatively or additionally, the encapsulation structure can be as shown in Fig. 1 described as being formed as a mirror structure.

[0074] Fig. 3B shows a cross-sectional view of the in Fig. Figure 3A shows the organic optoelectronic device 300. The encapsulation layer 332 is arranged between the substrate 310 and the coating layer 350. The encapsulation layer surrounds and encapsulates the organic optoelectronic layer structure 320. The organic optoelectronic layer structure 320 has, for example, an electrode 322, a metallization 326, and an active area 324. As shown in Fig. As illustrated in Figure 3B, the mirror structure 334 is arranged, for example, between the encapsulation layer 332 and the coating layer 350. This ensures that when electromagnetic radiation is applied to or incident on the surface of the organic optoelectronic device facing away from the substrate, the electromagnetic radiation 380 passes only through the coating layer 350 and is reflected by the mirror structure 334. Thus, the encapsulation layer 332 and, if applicable, the contact pad 340 are protected from the electromagnetic radiation 380 and are not eroded by it.

[0075] Alternatively or additionally, the mirror structure 334 can be exposed on the coating layer 350 (not shown).

[0076] This arrangement is relevant, for example, when the mirror layer is illuminated by the specified electromagnetic radiation on the side of the substrate 310 and through the substrate 310, the encapsulation layer 332, optionally the contact pad 340, and the coating layer 350. Alternatively or additionally, the mirror structure 334 can be arranged between the encapsulation layer 332 and the contact pad 340 (not shown). This allows, for example, when the electromagnetic radiation is applied to the surface side of the organic optoelectronic device facing away from the substrate, the encapsulation layer to be selectively removed by the electromagnetic radiation after the coating layer has been ablated and the first mirror structure has been removed, i.e., without damaging the contact pad.

[0077] Furthermore, the mirror structure 334, as in Fig. As described in section 1, the mirror structure can be arranged in the optically inactive region and / or in the optically active region. The arrangement of the mirror structure as part of the encapsulation layer can be extended to the arrangement of the mirror structure as a structure other than the encapsulation layer.

[0078] Fig. Figure 4 shows a schematic cross-sectional view of an organic optoelectronic device according to various embodiments. The organic optoelectronic device 1 can correspond to an embodiment of an optoelectronic device described above.

[0079] In various embodiments, the optoelectronic component 1 is an organic, light-emitting component.

[0080] The substrate 12 of the organic optoelectronic device 1 can be translucent or transparent.

[0081] Substrate 12 can be combined with the one in the Fig. 1, Fig. 3 described, substrate 110, 310 agree.

[0082] The substrate 12 serves as a support element for electronic elements or layers, for example, light-emitting elements. The substrate 12 can, for example, consist of or be formed from plastic, metal, glass, quartz, and / or a semiconductor material. Furthermore, the substrate 12 can consist of or be formed from a plastic film or a laminate with one or more plastic films. The substrate 12 can be mechanically rigid or mechanically flexible.

[0083] On the substrate 12, the organic optoelectronic component 1 has an organic optoelectronic layer structure 2.

[0084] The organic, optoelectronic layer structure 2 can be compared with the one described in the Fig. 1, Fig. 3 described, organic, optoelectronic layer structure 120, 324 agree.

[0085] The organic, optoelectronic layer structure 2 has a first electrode layer 14, which has a first contact section 16, a second contact section 18 and a first electrode 20.

[0086] A first barrier layer, not shown, for example a first barrier thin layer, can be formed between the substrate 12 and the first electrode structure 14.

[0087] The second contact section 18 is electrically coupled to the first electrode 20. The first electrode 20 is electrically isolated from the first contact section 16 by means of an electrical insulation barrier 21. The first electrode 20 can be configured as an anode or as a cathode. The first electrode 20 can be translucent or transparent. The first electrode 20 comprises an electrically conductive material, for example, a metal and / or a transparent conductive oxide (TCO), or a stack of multiple layers comprising metals or TCOs. The first electrode 20 can, for example, have a stack of layers combining a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers.The first electrode 20 can alternatively or additionally comprise: networks of metallic nanowires and particles, for example made of Ag, networks of carbon nanotubes, graphene particles and layers and / or networks of semiconducting nanowires.

[0088] The first electrode 20, or the second electrode 23 described below, is, for example, the one in Fig. 1 described electrode of the optically active area. Contact sections 16, 18 can each be a contact pad as described above.

[0089] Above the first electrode 20, the organic optoelectronic layer stack 22 of the organic optoelectronic layer structure 2 is formed. The organic optoelectronic layer stack 22 can, for example, have one, two, or more sublayers. For example, the organic optoelectronic layer stack 22 can be a light-emitting layer stack. The organic optoelectronic layer stack 22 can have a hole injection layer, a hole transport layer, an emitter layer, an electron transport layer, and / or an electron injection layer. The hole injection layer serves to reduce the band gap between the first electrode and the hole transport layer. In the hole transport layer, the hole conductivity is greater than the electron conductivity. The hole transport layer serves to transport the holes. In the electron transport layer, the electron conductivity is greater than the hole conductivity.The electron transport layer serves to transport the electrons. The electron injection layer serves to reduce the band gap between the second electrode and the electron transport layer. Furthermore, the organic optoelectronic layer stack 22 can comprise one, two, or more functional layer structure units, each of which has the aforementioned sublayers and / or further intermediate layers.

[0090] A second electrode of the organic optoelectronic layer structure 2 is formed above the organic optoelectronic layer stack 22 and is electrically coupled to the first contact section 16. The second electrode 23 can be configured according to one of the embodiments of the first electrode 20, whereby the first electrode 20 and the second electrode 23 can be identical or different. The first electrode 20 serves, for example, as the anode or cathode of the optoelectronic layer structure. Correspondingly to the first electrode, the second electrode 23 serves as the cathode or anode of the optoelectronic layer structure 22.

[0091] The organic optoelectronic layer stack 22 is electrically connected to the first electrode structure 14 and the second electrode 23. In other words, the first electrode structure 14 is electrically connected to the second electrode 23 via the organic optoelectronic layer stack 22. In other words, an electric current for operating the organic optoelectronic device 1 can flow from the first electrode structure 14 through the organic optoelectronic layer stack 22 to the second electrode 23, or alternatively in the reverse direction.

[0092] A getter structure (not shown) can be arranged on or above the second electrode. The getter layer can be translucent, transparent, or opaque. The getter layer can consist of, or be made of, a material that absorbs and binds substances harmful to the active area.

[0093] An encapsulation layer 24 is formed over the second electrode 23 and partially over the first contact section 16 and partially over the second contact section 18, which encapsulates the organic, optoelectronic layer structure.

[0094] The encapsulation layer 24 can be combined with the one in the Fig. 1, Fig. 3 described encapsulation layer 130, 332 agree.

[0095] In the encapsulation layer 24, a first recess is formed above the first contact section 16, and a second recess is formed above the second contact section 18. A first contact pad 32 is exposed in the first recess, arranged in a first contact area, and a second contact pad 34 is exposed in the second recess, arranged in a second contact area. The contact pad 32 in the first contact area serves to electrically contact the first contact section 16, and the contact pad 34 in the second contact area serves to electrically contact the second contact section 18. The encapsulation layer 24 can be configured as a second barrier layer, for example, as a second barrier thin film. The encapsulation layer 24 can also be referred to as thin-film encapsulation.The encapsulation layer 24 forms a barrier against chemical impurities and atmospheric substances, particularly water (moisture) and oxygen. The encapsulation layer 24 can be configured as a single layer, a stack of layers, or a layered structure. The encapsulation layer 24 can consist of or be composed of: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, poly(p-phenylene terephthalamide), nylon 66, as well as mixtures and alloys thereof. Optionally, the first barrier layer on the substrate 12 can be configured correspondingly to a specific configuration of the encapsulation layer 24.

[0096] An adhesive layer can be formed above the encapsulation layer 24. The adhesive layer 36 may, for example, contain an adhesive, such as a laminating adhesive, a lacquer, and / or a resin. The adhesive layer 36 may, for example, contain particles that scatter electromagnetic radiation, such as light-scattering particles.

[0097] The adhesive layer 36 can be combined with the one in the Fig. 1, Fig. The coating layer described in section 3 corresponds to 150, 350.

[0098] A cover body 38 can be formed or arranged above the adhesive layer 36, for example, by being laminated onto it. The adhesive layer 36 serves, for example, to attach the cover body 38 to the encapsulation layer 24. The cover body 38 comprises, for example, glass and / or metal. For example, the cover body 38 can be made primarily of glass and have a thin metal layer, for example, a metal foil, and / or a graphite layer, for example, a graphite laminate, on the glass body. The cover body 38 serves to protect the optoelectronic component 1, for example, from external mechanical forces. Furthermore, the cover body 38 can serve to distribute and / or dissipate heat generated in the optoelectronic component 1.For example, the glass of the cover body 38 can serve as protection against external influences, and the metal layer of the cover body 38 can serve to distribute and / or dissipate the heat generated during the operation of the optoelectronic component 1.

[0099] Fig. Figure 8 shows a flowchart for a method for manufacturing an organic optoelectronic component according to various embodiments. The method 800 can be adapted according to the embodiments described in the Fig. 1, Fig. 3, Fig. 4 described organic, optoelectronic components.

[0100] In various embodiments, method 800 comprises a substrate 802 with an optically active region and an optically inactive region arranged adjacent to the optically active region. At least one electrode is arranged on or above the substrate in the optically active region. At least one contact pad is arranged on or above the substrate in the optically inactive region. The at least one electrode is electrically connected to the at least one contact pad, while the optically inactive region is free of the at least one electrode. Method 800 further comprises a coating layer 804 on or above the substrate. The coating layer is configured to absorb a predetermined electromagnetic radiation with a specific wavelength range.Furthermore, method 800 comprises a formation 806 of at least one mirror structure arranged in the optically inactive region on or above the substrate. The mirror structure has a reflectance of at least 85% with respect to the wavelength range of the specified electromagnetic radiation. The mirror structure and the coating layer are arranged relative to each other such that the specified electromagnetic radiation is incident on the mirror structure from at least one direction of incidence through the coating layer.

[0101] In various embodiments, the organic optoelectronic device has an encapsulation layer arranged between the substrate and the coating layer. The mirror structure can be arranged between the encapsulation layer and the coating layer. Alternatively or additionally, the encapsulation layer can be at least partially configured as the mirror structure.

[0102] According to an embodiment 1, a method 600 comprises an organic, optoelectronic component 100, 300: - a substrate 110, 310 with an optically active area 170 and an optically inactive area 160a, 160b, 360a, 360b arranged next to the optically active area, wherein at least one electrode is arranged on or above the substrate 110, 310 in the optically active area 170 and at least one contact pad 140, 340 is arranged on or above the substrate 110, 310 in the optically inactive area 160a, 160b, 360a, 360b, wherein the at least one electrode is connected to the at least one contact pad 140, 340, - a coating layer 150, 350 on or over the substrate 110, 310, wherein the coating layer 150, 350 is configured to absorb a predetermined electromagnetic radiation 180, 380 with an intensity in a wavelength range, - at least one mirror structure 130, 334 arranged in the optically inactive region 160a, 160b, 360a, 360b on or above the substrate 110, 310, wherein the mirror structure 130, 334 has a reflectance with respect to the wavelength range of the specified electromagnetic radiation 180, 380 of at least 85%, wherein the mirror structure 130, 334 and the coating layer 150, 350 are arranged such that the specified electromagnetic radiation 180, 380 is incident on the mirror structure 130, 334 from at least one direction of incidence through the coating layer 150, 350.

[0103] According to an embodiment 2, the organic optoelectronic component 100, 300 according to embodiment 1 can be designed such that the mirror structure 130, 334 is arranged between the substrate 110, 310 and the coating layer 150, 350.

[0104] According to an embodiment 3, the organic optoelectronic component 100, 300 according to embodiment 1 or 2 can be designed such that the organic optoelectronic component 100, 300 has an encapsulation layer 130, 332 arranged between the substrate 110, 310 and the coating layer 150, 350, wherein the mirror structure 130, 334 is arranged between the encapsulation layer 130, 332 and the coating layer 150, 350.

[0105] According to an embodiment 4, the organic optoelectronic component 100, 300 according to one of the embodiments 1 to 3 can be designed such that the organic optoelectronic component 100, 300 has an encapsulation layer 130, 332 arranged between the substrate 110, 310 and the coating layer 150, 350, wherein the mirror structure 130, 334 is arranged between the encapsulation layer 130, 332 and the contact pad 140, 340.

[0106] According to an embodiment 5, the organic optoelectronic component 100, 300 according to one of the embodiments 1 to 4 can be designed such that the organic optoelectronic component 100, 300 has an encapsulation layer 130, 332 arranged between the substrate 110, 310 and the coating layer 150, 350, wherein the encapsulation layer 130, 332 is at least partially designed as the mirror structure 130, 334.

[0107] According to an embodiment 6, the organic optoelectronic component 100, 300 according to one of the embodiments 1 to 5 can be designed such that the mirror structure 130, 334 consists of a metal or a metal alloy.

[0108] According to an embodiment 7, the organic optoelectronic component 100, 300 according to one of the embodiments 1 to 6 can be designed such that the mirror structure 130, 334 is a dielectric Bragg mirror.

[0109] According to an embodiment 8, the organic optoelectronic component 100, 300 according to one of the embodiments 1 to 6 is designed such that the mirror structure 130, 334 has several alternating thin layers of aluminum oxide and titanium oxide.

[0110] According to an embodiment 9, the organic optoelectronic component 100, 300 according to one of the embodiments 1 to 8 can be designed such that the specified electromagnetic radiation 180, 380 has a significant intensity only in the wavelength range between 400 nm and 1500 nm.

[0111] According to an embodiment 10, the organic optoelectronic component 100, 300 according to one of the embodiments 1 to 9 can be designed such that the coating layer 150, 350 has an absorption coefficient, wherein the absorption coefficient of the coating layer 150, 350 with respect to the specified electromagnetic radiation 180, 380 is at least 15% of the incident, specified electromagnetic radiation.

[0112] According to an embodiment 11, the organic optoelectronic component 100, 300 according to one of the embodiments 1 to 10 can be designed such that the mirror structure 130, 334 is further arranged in the optically active area 170 of the substrate 110, 310.

[0113] According to an embodiment 12, the organic optoelectronic component 100, 300 according to one of the embodiments 1 to 11 can be designed such that the organic optoelectronic component 100, 300 is a light-emitting component with an organic light-emitting layer stack arranged between the first electrode and the second electrode, wherein light with a further predetermined wavelength range can be emitted from the organic light-emitting layer stack, wherein the mirror structure 130, 334 has a reflectance with respect to the light emitted by the organic light-emitting layer stack that is less than approximately 20%.

[0114] According to an embodiment 13, a method 800 for manufacturing an organic optoelectronic component 100, 300 can comprise: - Forming 802 a substrate 110, 310 with an optically active area 170 and an optically inactive area 160a, 160b arranged next to the optically active area, wherein at least one electrode is arranged on or above the substrate 110, 310 in the optically active area 170 and at least one contact pad 140, 340 is arranged on or above the substrate 110, 310 in the optically inactive area 160a, 160b, wherein the at least one electrode is electrically connected to the at least one contact pad 140, 340, - Forming 804 a coating layer 150, 350 on or over the substrate 110, 310, wherein the coating layer 150, 350 is configured to absorb a predetermined electromagnetic radiation 180, 380 with an intensity in a wavelength range, - Forming 806 at least one mirror structure 130, 334 arranged in the optically inactive region 160a, 160b on or above the substrate 110, 310, wherein the mirror structure 130, 334 has a reflectance with respect to the wavelength range of the specified electromagnetic radiation 180, 380 of at least 85%, wherein the mirror structure 130, 334 and the coating layer 150, 350 are arranged such that the specified electromagnetic radiation 180, 380 is incident on the mirror structure 130, 334 from at least one direction of incidence through the coating layer 150, 350.

[0115] According to an embodiment 14, the method 800 according to embodiment 13 can be designed such that an encapsulation layer 130, 332 is formed between the substrate 110, 310 and the coating layer 150, 350, wherein the mirror structure 130, 334 is arranged between the encapsulation layer 130, 332 and the coating layer 150, 350.

[0116] According to an embodiment 15, the method 800 according to embodiment 13 or 14 can be designed such that an encapsulation layer 130, 332 is formed between the substrate 110, 310 and the coating layer 150, 350, wherein the encapsulation layer 130, 332 is formed at least partially as the mirror structure 130, 334.

[0117] According to an embodiment 16, the method 800 can be designed according to one of the 13th to 15th embodiments such that the mirror structure 130, 334 is formed between the substrate 110, 310 and the coating layer 150, 350.

[0118] According to an embodiment 17, the method 800 according to one of the embodiments 13 to 16 can be designed such that an encapsulation layer 130, 332 is formed between the substrate 110, 310 and the coating layer 150, 350, wherein the mirror structure 130, 334 is arranged between the encapsulation layer 130, 332 and the contact pad 140, 340.

[0119] According to an embodiment 18, the method 800 according to one of the embodiments 13 to 17 can be designed such that the mirror structure 130, 334 consists of a metal or a metal alloy.

[0120] According to an embodiment 19, the method 800 according to one of the embodiments 13 to 18 can be designed such that the mirror structure 130, 334 is a dielectric Bragg mirror.

[0121] According to an embodiment 20, the method 800 according to one of the embodiments 13 to 19 can be designed such that the mirror structure 130, 334 has several alternating thin layers of aluminium oxide and titanium oxide.

[0122] According to an embodiment 21, the method 800 according to one of the embodiments 13 to 20 can be designed such that the specified electromagnetic radiation 180, 380 has a significant intensity only in the wavelength range between 400 nm and 1500 nm.

[0123] According to an embodiment 22, the method 800 according to one of the embodiments 13 to 21 can be designed such that the coating layer 150, 350 has an absorption coefficient, wherein the absorption coefficient of the coating layer 150, 350 with respect to the specified electromagnetic radiation 180, 380 is at least 15% of the incident, specified electromagnetic radiation.

[0124] According to an embodiment 23, the method 800 according to one of the embodiments 13 to 22 can be designed such that the mirror structure 130, 334 is further arranged in the optically active area 170 of the substrate 110, 310.

[0125] According to an embodiment 24, the method 800 according to one of the embodiments 13 to 23 can be designed such that the organic optoelectronic component 100, 300 is a light-emitting component with an organic light-emitting layer stack arranged between the first electrode and the second electrode, wherein light with a further predetermined wavelength range can be emitted from the organic light-emitting layer stack, wherein the mirror structure 130, 334 has a reflectance with respect to the light emitted by the organic light-emitting layer stack which is less than approximately 20%.

[0126] The invention is not limited to the specified embodiments. For example, several different organic optoelectronic components arranged side by side or one above the other can be used in the form of a display. REFERENCE MARK LIST 1, 100, 300, 500 optoelectronic component 12, 110, 310, 510 substrate 14 Electrode layer 16, 18 Contact section 20, 23, 322, 522 electrode 21 electrical insulation barrier 22, 120, 320, 520 organic, optoelectronic layer structure 24, 130, 332, 532 encapsulation layer 32, 34, 160a, 360a, 560a Contact area 36 Adhesive layer 38 Cover bodies 102, 104 organic optoelectronic component 140, 340, 540 contact pad 150, 350, 550 coating layer 160b, 360b, 560b Singing area 160a, 160b, 360a, 360b, 560a, 560b optically inactive area 170 optically active area 180, 380, 580 electromagnetic radiation 202, 204, 602, 604, 702, 704 graphic axes 130, 334 mirror structure 324 active area 800 procedures 802, 804, 806 Procedure step

Claims

[1] comprising an organic optoelectronic device (100, 300): - a substrate (110, 310) with an optically active region (170) and an optically inactive region (160a, 160b, 360a, 360b) arranged next to the optically active region, wherein at least one electrode is arranged on or above the substrate (110, 310) in the optically active region (170) and at least one contact pad (140, 340) is arranged on or above the substrate (110, 310) in the optically inactive region (160a, 160b, 360a, 360b), wherein the at least one electrode is connected to the at least one contact pad (140, 340), wherein the optically inactive region (160a, 160b, 360a, 360b) is free of the at least one electrode, - a coating layer (150, 350) on or above the substrate (110, 310), wherein the coating layer (150, 350) is configured to absorb a predetermined electromagnetic radiation (180, 380) with an intensity in a wavelength range, - at least one mirror structure (130a, 334) arranged in the optically inactive region (160a, 160b, 360a, 360b) on or above the substrate (110, 310), wherein the mirror structure (130a, 334) has a reflectance with respect to the wavelength range of the specified electromagnetic radiation (180, 380) of at least 85%, wherein the mirror structure (130a, 334) and the coating layer (150, 350) are arranged such that the specified electromagnetic radiation (180, 380) is incident on the mirror structure (130a, 334) from at least one direction of incidence through the coating layer (150, 350), wherein the mirror structure (130a, 334) is arranged between the substrate (110, 310) and the coating layer (150, 350), wherein the organic optoelectronic device (100, 300) has an encapsulation layer (130, 332) arranged between the substrate (110, 310) and the coating layer (150, 350), wherein the mirror structure (130a, 334) is arranged between the encapsulation layer (130, 332) and the coating layer (150, 350), and wherein the organic optoelectronic device (100, 300) is a light-emitting device with an organic light-emitting layer stack arranged between the at least one electrode and a second electrode, wherein light with a further predetermined wavelength range can be emitted from the organic light-emitting layer stack, wherein the mirror structure (130a, 334) has a reflectance with respect to the light emitted by the organic light-emitting layer stack which is less than approximately 20%. [2] Organic optoelectronic device (100, 300) according to claim 1, wherein the organic optoelectronic device (100, 300) has the encapsulation layer (130, 332) arranged between the substrate (110, 310) and the coating layer (150, 350), wherein the mirror structure (130a, 334) is arranged between the encapsulation layer (130, 332) and the contact pad (140, 340). [3] Organic optoelectronic device (100, 300) according to one of claims 1 to 2, wherein the organic optoelectronic device (100, 300) has the encapsulation layer (130, 332) arranged between the substrate (110, 310) and the coating layer (150, 350), wherein the encapsulation layer (130, 332) is at least partially formed as the mirror structure (130a, 334). [4] Organic optoelectronic device (100, 300) according to any one of claims 1 to 3, wherein the mirror structure (130a, 334) consists of a metal or a metal alloy. [5] Organic optoelectronic device (100, 300) according to any one of claims 1 to 4, wherein the mirror structure (130a, 334) is a dielectric Bragg mirror. [6] Organic optoelectronic device (100, 300) according to any one of claims 1 to 5, wherein the mirror structure (130a, 334) comprises several alternating thin layers of aluminium oxide and titanium oxide. [7] Organic optoelectronic device (100, 300) according to one of claims 1 to 6, wherein the specified electromagnetic radiation (180, 380) has a significant intensity only in the wavelength range between 400 nm and 1500 nm. [8] Organic optoelectronic device (100, 300) according to any one of claims 1 to 7, wherein the coating layer (150, 350) has an absorption coefficient, wherein the absorption coefficient of the coating layer (150, 350) with respect to the predetermined electromagnetic radiation (180, 380) is at least 15% of the incident predetermined electromagnetic radiation. [9] Organic optoelectronic device (100, 300) according to one of claims 1 to 8, wherein the mirror structure (130a, 334) is further arranged in the optically active area (170) of the substrate (110, 310). [10] Method (800) for manufacturing an organic optoelectronic device (100, 300) comprising the method: - Forming (802) a substrate (110, 310) with an optically active region (170) and an optically inactive region (160a, 160b) arranged next to the optically active region, wherein at least one electrode is arranged on or above the substrate (110, 310) in the optically active region (170) and at least one contact pad (140, 340) is arranged on or above the substrate (110, 310) in the optically inactive region (160a, 160b), wherein the at least one electrode is electrically connected to the at least one contact pad (140, 340), wherein the optically inactive region (160a, 160b) is free of the at least one electrode, - Forming (804) a coating layer (150, 350) on or over the substrate (110, 310), wherein the coating layer (150, 350) is configured to absorb a predetermined electromagnetic radiation (180, 380) with an intensity in a wavelength range, - Forming (806) at least one mirror structure (130a, 334) arranged in the optically inactive region (160a, 160b) on or above the substrate (110, 310), wherein the mirror structure (130a, 334) has a reflectance with respect to the wavelength range of the specified electromagnetic radiation (180, 380) of at least 85%, wherein the mirror structure (130a, 334) and the coating layer (150, 350) are arranged such that the specified electromagnetic radiation (180, 380) is incident on the mirror structure (130a, 334) from at least one direction of incidence through the coating layer (150, 350), wherein the mirror structure (130a, 334) is arranged between the substrate (110, 310) and the coating layer (150, 350), wherein an encapsulation layer (130, 332) is formed between the substrate (110, 310) and the coating layer (150, 350), wherein the mirror structure (130a, 334) is arranged between the encapsulation layer (130, 332) and the coating layer (150, 350), and wherein the organic optoelectronic device (100, 300) is a light-emitting device with an organic light-emitting layer stack arranged between the at least one electrode and a second electrode, wherein light with a further predetermined wavelength range can be emitted from the organic light-emitting layer stack, wherein the mirror structure (130a, 334) has a reflectance with respect to the light emitted by the organic light-emitting layer stack which is less than approximately 20%. [11] Method (800) according to claim 10, wherein the encapsulation layer (130, 332) is formed between the substrate (110, 310) and the coating layer (150, 350), wherein the encapsulation layer (130, 332) is formed at least partially as the mirror structure (130a, 334).

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