Method for providing an electron beam and control device therefor

Abstract

Method (500) for providing an electron beam (112e), comprising the method (500): • providing (501) data representing a time-dependent target deflection of the electron beam (112e); • determining (503) information representing a rate of change of the target deflection; • generating (505) a deflection signal (302a), wherein the deflection signal (302a) comprises a carrier signal (702) and a correction signal (704) superimposed on the carrier signal (702), • wherein the carrier signal (702) represents the target deflection and the correction signal (704) represents the information; • smoothing (507) the deflection signal (302a); • deflecting (509) the electron beam (112e) based on the smoothed deflection signal (302a) by applying the smoothed deflection signal (302a) is fed to a deflection unit (308).

Description

The invention relates to a method for providing an electron beam and to a control device for this purpose.In general, a high-power electron beam may be provided by a so-called electron beam gun, so that a carrier or a target may be processed by the electron beam within a vacuum process chamber. For example, the electron beam can be guided along a surface of a target within the vacuum process chamber and / or target material of the target can be evaporated. Thus, for example, an electron beam coating process can be realized for coating a substrate within the vacuum process chamber with evaporated target material. Furthermore, the electron beam can also be used to process, e.g. heat, a substrate or a carrier within the vacuum process chamber or to change, e.g. cut, its shape or structure, wherein the electron beam can be guided along a surface of a substrate or of the carrier. In general, for various processes, it may be necessary to guide or change the location of incidence P(x,y,z) of an electron beam within a vacuum process chamber along a predefined trajectory T(P,t). The respective location of incidence P(x,y,z) of the electron beam results from the course of the electron beam in the vacuum process chamber and the relative position of the respective region which limits the propagation of the electron beam (i.e. the position of the surface on which the electron beam then impinges) with respect to the electron beam.For example, substrates may be processed or treated, e.g., processed, heated, and / or structurally altered. One method of coating (coating) a substrate is physical vapor deposition (PVD), which is also referred to as physical vapor deposition. In this case, a material to be evaporated (the so-called material to be evaporated or target material) is converted into the vapor phase (gas phase) by means of physical methods, for example by means of so-called electron beam evaporation (EB-PVD).An electron beam gun may, for example, comprise an electron beam source and a deflection device, wherein a directed electron beam may be generated by means of the electron beam source and wherein the directed electron beam may be deflected by an angle (also referred to as deflection angle) by means of the deflection device. Conventionally, various approaches are used to provide the necessary electrical currents to the deflection device, starting from the target location of impingement P(x,y,z), the strengths of which ultimately define the deflection angle. For example, for the deflection of electron beams, continuous analog signals, such as sine, square and triangular signals, which are easy to produce electronically are superimposed to form the required electrical currents. The variety of deflection patterns that can be generated as a result is also subject to significant limitations with increasing simplicity.To overcome these limitations, programmable discrete point deflection patterns are used. The basis of this approach is to convert a digitally stored deflection pattern into the required electrical currents. The required signal is calculated conventionally by means of a computer and / or a signal processor, for example a digital signal processor (also referred to as DSP), and is converted into an analog voltage by digital-to-analog converters (also referred to as DAC). This analog voltage serves illustratively as a setpoint value for the deflection amplifier, which then generates the required power signal. When generating an analog signal by DAC, a signal with steps, i.e. with discrete signal strengths, is produced between which a jump is made.These steps are conventionally at least partially smoothed (illustratively "ground") by the low-pass behavior of the amplifier or by an additional low-pass in the signal path to the amplifier. The low-pass behavior of the amplifier is mainly due to its limited slew rate ("slew rate") and is dependent on the signal amplitude. The smaller the signal amplitude, the less smoothing is therefore effective. Signals with a small amplitude may be insufficiently smoothed.However, these steps result in the electron beam remaining at an impact location for a longer time and then changing abruptly to the next impact location. In the process, the steps result in an uneven speed at which the trajectory is traversed (also referred to as beam speed) and these in turn result in different energy inputs and thus in undesired temperature differences on the applied (irradiated) material. For example, such temperature differences may cause undesired evaporation during melting or splashing of material during evaporation by means of electron beams. If, in addition, a larger area is to be irradiated by means of the electron beam, a dense network of locations of incidence must be predefined in order to prevent the area from being merely "perforated".If an additional low-pass filter is introduced into the signal path in order to achieve greater smoothing, however, a change in the amplitude and the phase of the deflection signal must be accepted, and it must also be accepted that the low-pass filter again prevents rapid jumps, for example between two processors.DE 10 2016 122 671 A1 describes a prediction mechanism for an electron beam gun, for which the required deflection signal is calculated, which counteracts the effects of a disturbance of the supply voltage. DE 197 45 771 A1 describes a dynamic correction by means of which it is intended to compensate for the eddy currents flowing in the iron of the deflection coil, which eddy currents have a frequency-dependent feedback effect on the coil current.According to various embodiments, it has been clearly recognized that a compromise between a uniform energy input and the accuracy with which the electron beam can be deflected is conventionally required, i.e. a conventional electron gun can be optimized either for a uniform energy input or for a high deflection precision.According to various embodiments, a method, a control device and an electron beam gun are provided which enables a uniform energy input with high deflection precision.Clearly, according to various embodiments, it is made possible that the electron beam can be moved at a speed that is as uniform as possible and at the same time meets the predetermined deflection locations as exactly as possible and reaches them as quickly as possible. Slowing down or stopping the beam at a small jump that can be covered in a very short time can be avoided according to various embodiments. In this context, it is possible, however, to execute jumps at a maximum beam speed in certain situations, which can be predetermined, for example.At the same time, according to various embodiments, the outlay on technique for generating the deflection signal is kept low. In particular, fast and / or expensive DAC components can be dispensed with, which would otherwise be necessary in order to be able to generate fine steps at a very high output rate.Illustratively, the delay and attenuation of the deflection signal due to its smoothing is compensated for by generating the deflection signal with a higher and / or higher rate of change, so that the smoothed deflection signal comes closer to the desired behavior.For example, it has been recognized that the low pass filter primarily attenuates high frequencies in the deflection signal, which reduces the rate of change of the deflection signal. This effect is taken into account in that the high frequencies are already amplified during the generation of the deflection signal (which clearly increases its rate of change), so that their attenuation during the smoothing is compensated.According to various embodiments, a method for providing an electron beam may include: providing data representing a time-dependent target deflection of the electron beam; determining information representing a rate of change of the target deflection; forming a deflection signal, wherein the deflection signal includes a carrier signal and a correction signal superimposed on the carrier signal, wherein the carrier signal represents the target deflection and the correction signal represents the information; smoothing the deflection signal; deflecting the electron beam on the basis of the smoothed deflection signal.Exemplary embodiments of the invention are illustrated in the figures and are explained in more detail below.They show FIG. 1 shows an electron beam process arrangement according to various embodiments in a schematic side view or cross-sectional view; FIG. 2A shows an electron beam source according to various embodiments in a schematic side view or cross-sectional view; FIG. 2B shows an electron beam gun according to various embodiments in a schematic side view or cross-sectional view; FIG. 3 shows a deflection system according to various embodiments in a schematic side view or cross-sectional view; FIGS. 4 to 9 and 13 each show a method according to various embodiments in various schematic diagrams; FIGS. 10A to 10C each show a circuit in different configurations according to various embodiments in a schematic circuit diagram; FIGS. 11A to 11C each show a circuit in various configurations according to various embodiments in a schematic circuit diagram; FIGS. 12A to 12C each show a smoothing element in various configurations according to various embodiments in a schematic circuit diagram; and FIG. 14A illustrates a control device according to various embodiments in a schematic circuit diagram.In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the figure(s) described. Since components of embodiments may be positioned in a number of different orientations, the direction terminology is for the purpose of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other, unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended examples.In the context of this description, the terms "connected", "connected" and "coupled" are used to describe both a direct and an indirect connection (e.g. ohmic and / or electrically conductive, e.g. an electrically conductive connection), a direct or indirect connection and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.According to various embodiments, the term "coupled" or "coupling" may be understood in the sense of a (e.g. mechanical, hydrostatic, thermal and / or electrical), e.g. direct or indirect, connection and / or interaction. A plurality of elements may be coupled to one another, for example, along an interaction chain, e.g., a signal path. According to various embodiments, "coupled" can be understood in the sense of a mechanical (e.g. physical or physical) coupling, e.g. by means of a direct physical contact. A clutch may be configured to transmit a mechanical interaction (e.g., force, torque, etc.).According to various embodiments, a quantity may be understood to mean a physical quantity which represents (e.g. describes) a quantitatively detectable property of a physical object, process or state. Its value (magnitude value) can optionally depend on the time t, for example the strength of a signal (also referred to as signal strength). Optionally, the physical variable, e.g. an electric field, can have an anisotropy with respect to the physical space and / or in time, i.e. the variable value depends on the measurement direction and / or measurement sequence.According to various embodiments, the signal strength may generally represent an electrical variable of a signal (e.g. of the deflection signal), e.g. its current, voltage, amplitude, power, DC value, peak value, etc. Illustratively, the signal strength may have at least one electrical value (i.e. one or more electrical values) characterizing at least one power value of the signal (e.g. of the deflection signal), e.g. at least one electrical current intensity, at least one electrical flux, at least one electrical potential, at least one electrical power and / or at least one electrical voltage, e.g. at least one temporal profile of the at least one electrical value. The signal strength can correlate, for example, with an electric and / or magnetic field, by means of which the electron beam is deflected and / or generated.A magnitude of a signal (also referred to as a signal magnitude) may more generally refer to the signal strength or a temporal magnitude of the signal, such as its frequency (also referred to as a signal frequency), period duration, phase angle, duty cycle, rate of change, and / or its duration (also referred to as a signal duration).In general, different (physical) quantities may be used to represent the same property. The various physical variables can be linked to one another, so that they can be transformed into one another taking into account the linkage (e.g. a function or dependency among one another). Thus, for example, impulse and kinetic energy are a function of the mass and the speed, i.e. are linked to one another by means of the mass and the speed, and can both represent the speed and / or one another, for example, given knowledge of the mass. In other words, the (physical) quantities linked to one another can be transformed into one another without making reference to another property which is represented by the quantities, i.e. they also represent one another.The kinetic energy of the electron beam (i.e. of its electrons) can also be expressed by the acceleration voltage (e.g. a high voltage), the electric acceleration field, by the velocity of the electrons or their impulse using the corresponding combination (e.g. the electron charge and / or the electron mass). The kinetic energy of the electron beam can be defined by the acceleration voltage with which the electron beam is generated, i.e. by means of which the electrons of the electron beam are accelerated. The greater the acceleration voltage, the greater the kinetic energy of the electrons of the electron beam, and thus their velocity, can be. The sum of the kinetic energy of all electrons of the electron beam (i.e. the kinetic electron energy of the electron beam) may define the total energy or power of the electron beam.Controlling may be understood as an intended influencing of a system according to various embodiments. In this case, the state of the system can be changed in accordance with a specification. Control can be understood as control, wherein a change in state of the system due to disturbances is additionally counteracted. Illustratively, the controller can have a forward-directed control path and thus illustratively implement a sequence controller which converts an input variable into an output variable. However, the control path can also be part of a control loop, so that a control is implemented. In contrast to the pure forward control, the control system has a continuous influence of the output variable on the input variable which is effected by the control loop (feedback). In other words, as an alternative or in addition to the control, a regulation can be used or as an alternative or in addition to the control, a regulation can take place.According to various embodiments, an electron beam may be understood to mean a directed (e.g. collinear and / or collimated) propagation of electrons. In this case, the power density (power per area) introduced by means of the electron beam can only fluctuate and / or decrease insignificantly along the beam path. For example, a power density may decrease less than about 20% per meter (beam length) (e.g., less than about 10%, 5%, or 1%).By means of an electron beam gun, a directed electron beam (e.g. with a beam power of more than one kilowatts, e.g. with a beam power in a range of about 1 kW to about 1 MW) can be generated and deflected by means of controlled and / or regulated magnetic fields transversely to its propagation direction (described as x- and y-direction). The magnetic fields can be generated by means of deflection coils, wherein the currents required for the deflection coils can be generated by means of a deflection signal and a deflection amplifier for amplifying the deflection signal. In this case, the deflection amplifier can receive or receive the deflection signal for driving the x- and y-setpoint values for the deflection of the electron beam as an analog deflection signal with the deflection voltages (U x( t), U y( t)). The deflection voltages (U x( t), U y( t)) of the analog deflection signal define, for example, the deflection currents (I x( t), I y( t)) provided by means of the deflection amplifier, which in turn define the corresponding deflection angles (α x( t), α y( t)) of the deflection of the electron beam from its propagation direction.These analog deflection signals with the deflection voltages (U x( t), U y( t)) can be generated and / or stored, for example, in a computer (by means of a computing unit). The deflection signals can be generated without interruption at high speed, for example, during the entire process time (during which the electron beam is generated).According to various embodiments, the required output rate of the deflection signals (e.g. DAC signals) may be relatively low, which keeps the cost for DSP technology low. Alternatively or additionally, the electron beam can be moved at a very uniform speed, jumps at a maximum speed still being possible.According to various embodiments, at least one of the following is provided:• a virtually linear beam profile between two coordinate points;• a substantially constant beam velocity;• Almost no dwell of the electron beam on the coordinate points;• Targeted jumps (with optionally subsequent short dwell of the electron beam at the target point) are possible;• Optimization for a fixed output rate;The step increase described below can be achieved by means of a larger voltage swing at the DSP output.FIG. 1 illustrates an electron beam process arrangement 100 according to various embodiments in a schematic side view or cross-sectional view.According to various embodiments, an electron beam process arrangement 100 may include: a vacuum chamber 802 (also referred to as a vacuum process chamber) in which at least one (i.e. exactly one or more than one) impact region 802 a, 802 bis arranged; at least one electron beam gun 112 including an electron beam source 112 qand a deflection system 112 afor deflecting an electron beam 112 einto the plurality of impact regions 802 a, 802 b.The electron beam 112 emay be deflected, for example, according to a deflection sequence, e.g. several times in succession according to the same deflection sequence. A deflection sequence can clearly represent a sequence of target points of incidence and / or a target trajectory onto which the electron beam 112 eis directed (i.e. which is to be traversed by means of the electron beam 112 e). The or each deflection sequence can have and / or define at least one (i.e. exactly one or more than one) deflection figure. The or each deflection figure can define a self-contained trajectory 155 or a sequence of target points of impingement 155 along the self-contained trajectory 155 which is to be irradiated (the so-called impingement figure 155). The impact figure 155 can represent, for example, a trajectory T(P,t) of the point of impact P(x,y,z) of the electron beam 112 e. The size and orientation of the impingement figure 155 can depend on its position in space. More generally, the impingement figure 155 is described by the deflection figure (also referred to as deflection pattern), which can be related to the deflection angle (α x( t), α y( t)), for example. The or each deflection figure can be assigned to a deflection region 802 a, 802 b, for example. For example, the corresponding impingement figure 155 can be arranged in a deflection region 802 a, 802 b. More generally, the deflection figure can image the electron beam onto the incidence figure 155 (analogous to a central projection).Optionally, the electron beam process assembly 100 may include at least one target holder 114 (i.e., exactly one or more than one target holder) for holding the target material (also referred to as sputter material or coating material) in one or more than one impingement area 802 a, 802 bof the plurality of impingement areas. The or each impingement region 802 a, 802 bmay optionally comprise a target material which is to be evaporated by means of the electron beam 112 e. Alternatively or additionally, a substrate to be irradiated can be arranged in the region of incidence 802 a, 802 b.The target material may include, for example, a metal (e.g., an alloy), an organic material, a plastic, graphite, or a ceramic. The distance of the electron beam source 112 qto the material to be evaporated can be, for example, in a range from about 0.5 m to about 5 m, for example in a range from about 1 m to about 2 m.The target material can have, for example, a material to be evaporated (also referred to as material to be evaporated), a material to be heated (e.g. a substrate) and / or a material to be melted (also referred to as material to be melted). For example, a substrate can be irradiated by means of the electron beam 112 e, which is coated with the target material.FIG. 2A illustrates an electron beam source 112 qaccording to various embodiments in a schematic side view or cross-sectional view.According to various embodiments, the electron beam source 112 qmay include an electron source 202 for generating and / or emitting electrons 202 e. The electron source 202, e.g. a thermal electron source 202, may for example comprise a cathode (e.g. made of tungsten or another temperature-resistant metal) from which the electrons exit (into the free space, i.e. into a vacuum).Furthermore, the electron beam source 112 qmay have a beam shaping unit 204 (also referred to as a beam splitter) which concentrates the electrons 202 e(emitted by the electron source 202) to form a beam 112 e, the so-called electron beam 112 e. The beam shaping unit 204 (e.g. comprising an annular anode) can generate, for example, an electric field (also referred to as acceleration field) which accelerates the generated electrons 202 eand / or concentrates them (i.e. collimates them, for example) to form a beam 112 e.In order to be able to generate and emit an electron beam 112 ein the high-power mode, the cathode of the electron source 202 can be adapted to a high electron beam current or be designed to generate a high electron beam current (also referred to as a high-current cathode). An electron source 202 according to various embodiments may include, for example, a high-current cathode in the form of a flat cathode (e.g. in the form of a truncated cone or in the form of another truncated body) or hollow cathode. A flat cathode, unlike a sharpened cathode (in the case of conventional welding guns), may have a flat emission surface from which the electrons exit from which an electron beam is subsequently formed.The electron beam source 112q may be configured to generate an electron beam 112e having a diameter (beam diameter) in a range from about 1 mm to about 6 mm and / or having a power greater than about 5 kW (kilowatts), or 10 kW or 100 kW.FIG. 2B illustrates an electron beam gun 112, e.g. the electron beam process arrangement 100, according to various embodiments, in a schematic side view or cross-sectional view.The greater the power of the electron beam 112 e, the greater the rate of gaseous coating material generated by the electron beam 112 e, e.g., the coating rate may increase. For example, for a low coating rate, an electron beam may be provided with a power (also referred to as beam power) in a range from about 5 kW to about 10 kW. Alternatively, for a high coating rate, an electron beam having a beam power in a range from about 100 kW to about 1000 kW may be provided.According to various embodiments, an electron beam source 112 q(e.g. when operated in a high power mode) may provide a beam power of more than 5 kW, e.g. of more than about 10 kW, e.g. of more than about 50 kW, e.g. of more than about 100 kW, e.g. of more than about 500 kW, e.g. in a range of about 100 kW to about 1000 kW, e.g. in a range of about 500 kW to about 1000 kW.For this purpose, the electron beam process arrangement 100 or the electron beam gun 112 can have a power supply 224 which is coupled to the electron beam source 112 q. The power supply 224 may supply electric power to the electron beam source 112 q, for example, according to the beam power or more. Alternatively or additionally, the power supply 224 may be configured to provide an electrical high voltage (acceleration voltage) with several thousand V (volts), i.e. in the kV range, and to supply it to the electron beam source 112 q, e.g. its beam shaping unit 204, for accelerating the electrons 202 e, e.g. an electrical high voltage with more than about 5 kV, e.g. with more than about 10 kV, e.g. with more than about 20 kV, e.g. with more than about 30 kV, e.g. with more than about 40 kV, e.g. with more than about 50 kV, e.g. in a range from about 25 kV to about 60 kV.The electric current and / or the electric voltage provided by the power supply 224 may define an electric power which the power supply supplies to the electron beam source 112 qand which the electron beam source 112 qtakes, respectively. For example, the power supply 224 may be configured to provide and supply an electric power equal to or greater than the beam power to the electron beam source 112 q.FIG. 3 illustrates a deflection system 112 aaccording to various embodiments in a schematic side view or cross-sectional view. The deflection system 112 amay include a control device 300.According to various embodiments, the deflection system 112 a, e.g. its control device 300, may include a deflection signal generator 302, e.g. including a digital signal processor (DSP) and / or a digital-to-analog converter (DAC). The deflection signal generator 302 may be configured to provide the deflection signal 302 a, e.g. based on at least one deflection parameter. The deflection signal generator 302 may be computer-assisted or computer-based, for example.According to various embodiments, the deflection signal generator 302 may be any suitable electronic component, e.g. a chip, a sound processor or audio processor, a main processor (CPU), a multi-core processor, a microprocessor, a digital sound processor with a coupled D / A converter (digital / analog converter), an analog sound processor, a digital / analog sound processor, a signal processor, a digital signal processor with a coupled D / A converter, a digital / analog signal processor, a field programmable gate array (FPGA, a programmable logic gate array), a reduced instruction set computer (RISC CPU), a complex instruction set computer (CISC CPU), and / or the like. Optionally, the deflection signal generator 302 can be provided by means of one or the microcomputer, e.g. a PC.For example, a signal processor, e.g., digital signal processor (DSP), may be used that receives deflection data 304d from one or more data units 304 (e.g., multiple data units 304). The one or more data units 304 can be provided, for example, by means of a beam guidance computing unit 304 (also referred to as a beam guidance computer, e.g. in the form of a microcomputer, e.g. a PC). Generally, the one or more data units 304 may be configured to provide the data, e.g. to form, output, store and / or modify the data. For example, one or more than one computer may be connected to the DSP and provide the deflection data 304 dand / or load the deflection data 304 don the same.The deflection data 304 dmay include or be formed from one or more data sets of deflection parameters (deflection parameter sets) which are processed (i.e. processed) cyclically (i.e. repeatedly) with a clock time t 0( to be predetermined, e.g. in a range from approximately 1 μs to approximately 100 μs). The signal processor may generate a corresponding (e.g. digital) deflection signal based on the deflection data 304 d, which is converted by the DAC into an analog deflection signal 302 a. The data sets may be created and processed in the data unit 304 (e.g. modified, i.e. adapted and / or modified, based on a measurement signal or a specification) and then transmitted to the signal processor (illustratively, these may be loaded onto the signal processor). Alternatively or additionally, the data unit 304 can have a memory in which the data (e.g. the data records) are stored.A deflection parameter may define a path along which the electron beam 112 eruns (also referred to as a beam trajectory) when deflected according to the deflection parameter. For example, a deflection parameter may define a point within an impact region 802 a, 802 bto which the electron beam 112 eis directed when deflected according to the deflection parameter. Alternatively or additionally, the deflection parameter may define a deflection angle by which the electron beam 112 eis deflected towards the region of incidence 802 a, 802 b.A deflection parameter may include a deflection value (e.g., a vectorial deflection value) that generally represents a measure (e.g., an angle, a distance, a curvature, or a force, e.g., Lorenz force) by which the electron beam 112 eis deflected. For example, the deflection value may represent an angle (also referred to as a deflection angle) by which the electron beam 112 eis deflected. Alternatively or additionally, the deflection value may represent a force (e.g., Lorenz force) with which the electron beam 112 eis deflected.Optionally, a deflection parameter may have a time value (e.g., a time coordinate t), e.g., a time at which a different deflection parameter is switched to, or a time duration (also referred to as a point dwell time) during which the electron beam 112 eis deflected according to the deflection value. The time value can clearly define how long a specific point in space is irradiated and / or what power is input into it by means of the electron beam 112 e.According to various embodiments, the deflection system 112 amay include at least one deflection unit 308, e.g. a first deflection unit for deflecting the electron beam along a first axis (e.g. x-axis) and a second deflection unit for deflecting the electron beam along a second axis (e.g. y-axis). The second axis can be, for example, perpendicular to the first axis or at least linearly independent of the latter. The electron beam source 112 qmay emit the electron beam 112 ealong a third axis (e.g. z-axis, also referred to as beam axis), perpendicular to the first axis and to the second axis, in the direction of the at least one deflection unit 308.According to various embodiments, the deflection signal 302 amay include a plurality of components (also referred to as coordinate components), e.g. a first coordinate component for deflecting the electron beam 112 ealong the first axis and a second coordinate component for deflecting the electron beam 112 ealong the second axis. Analogously, the deflection parameter and / or the signal strength may have a plurality of corresponding coordinate components. For example, each coordinate component of the deflection signal may be transmitted by means of a separate electric voltage U x( t) and U y( t), e.g. to the corresponding first / second deflection unit.The deflection parameter(s), the coordinate component(s), the deflection signal(s), the signal strength(s), the formation rule(s) and / or the transformation(s) can / can be effected, for example, on the basis of one or more coordinates of a coordinate system (for example a spherical coordinate system, a cylindrical coordinate system or a Cartesian coordinate system). For example, a coordinate (e.g., an angle, a time duration, and / or a length) may be stretched or compressed. It is therefore understood that the description herein is not limited to rectangular Cartesian coordinates, since any other suitable coordinate system can also be used in an equivalent or similar manner, which results from a similarity transformation or coordinate transformation, for example. In the following and herein, for the purposes of better understanding, the familiar and illustrative Cartesian coordinates are used.The deflection system 112 a, e.g. its control device 300, can optionally have a signal processing unit 316, which amplifies and / or smoothes the deflection signal 302 aand supplies the amplified and / or smoothed deflection signal 312 ato the deflection unit 308 and / or couples it in. The signal processing unit 316 may include an amplifier 306 for amplifying and / or a smoothing element 402 for smoothing the deflection signal 302 a. The amplifier 306 and / or the smoothing element 402 may also be part of and / or be implemented jointly with the deflection signal generator 302.As described herein, the deflection signal may be processed in various ways. The various stages through which the deflection signal traverses along its signal path may be referred to below as first deflection signal 302 a. The deflection signal ultimately supplied to the deflection unit 308 and / or this coupled-in deflection signal may be referred to as a second deflection signal 312 a. The first and / or the second deflection signal may comprise or be formed from an analog signal.The deflection signal generator 302 may include at least one clock, e.g., as part of the signal processor and / or the DAC. The clock generator can provide a clock signal whose frequency f t( also referred to as clock frequency) or whose reciprocal, the period duration t 0, synchronizes the components of the deflection signal generator 302 with one another. The clock signal can be coupled to the DAC and / or the signal processor and / or provided by means of the latter.One or the digital-to-analog converter (DAC) is configured to generate a (e.g. stepped) analog signal from one or the digital signal. The digital signal can be formed from the data, for example, by means of the at least one signal processor. The data may include a sequence of deflection parameters that are sequentially converted to a signal strength of the analog signal. The rate at which the deflection parameters are converted successively into individual signal strengths of the deflection signal can correspond to the clock frequency.The conversion of the deflection data into the deflection signal can be effected, for example, according to the clock frequency. For example, with each clock or per period duration t 0 of the clock signal, a deflection parameter can be converted into a signal strength of the deflection signal. In other words, the rate at which the deflection parameters are converted one after the other into individual signal strengths of the deflection signal may correspond to the clock frequency f T.Optionally, the clock frequency f T of the deflection signal generator 302 can be adapted to a grid frequency, e.g. can be synchronized therewith.FIG. 4 illustrates a method according to various embodiments in a schematic diagram.According to various embodiments, the method may include in 401: forming a first deflection signal 302 abased on at least one deflection parameter A(P(x,t),P(y,t)), e.g. according to a formation rule B and / or by means of the deflection signal generator 302. The deflection signal generator 302 may implement the forming rule B, for example. The deflection signal 302 amay have the (time-dependent) signal strength S A( t)=B(A).The at least one deflection parameter A(P(x,t),P(y,t)) can be part of a data set, for example, or form this. Optionally, the deflection signal 302 amay include at least one first coordinate component S A,x( t,A(x,t )) associated with a first coordinate x and / or a second coordinate component S A,y( t,A(y,t )) associated with a second coordinate y.The formation rule B may illustratively take into account the geometry and the properties of the electron beam gun as well as the process environment, i.e. for example the relative position, orientation, power strength and size of the elements of the electron beam gun to one another, such as e.g. the electron beam source 112 qand the deflection system. Illustratively, the formation rule B may direct the electron beam 112 egenerated according to an operating point of the electron beam source 112 q(also referred to as a reference electron beam) to a coordinate represented by the deflection parameter A(P(x,t),P(y,t) (i.e. intended to be irradiated with the electron beam).Furthermore, in 403, the method may include: smoothing the deflection signal 302 a, e.g. according to a smoothing characteristic G(t) and / or by means of a smoothing element 402. The smoothing element 402 may implement the smoothing characteristic G(t), for example.Smoothing can be understood to mean clearly that a first curve is converted into a second curve with a smaller curvature (i.e. with a lower extreme value of the second time derivative), which simultaneously deviates as little as possible from the original. In this sense, low order approximation polynomials, for example, meet the requirements of smoothing very well. The smoothing may convert the first deflection signal 302 ato a second deflection signal 312 a. For example, the second deflection signal 312 amay have a time derivative with a smaller variation and / or amplitude than the first deflection signal 302 a.The smoothing can be carried out, for example, by filtering out (e.g. removing and / or attenuating) certain features of the first deflection signal 302 a, e.g. frequency components and / or noise. The filtering can be effected, for example, by means of a filter of the smoothing element 402.The smoothing characteristic can be described analytically, for example, by means of a smoothing function (also referred to as a smoothing transfer function). The transfer function G of a circuit (also referred to as a system function) describes in system theory (mathematically) the relationship between the input and output signals. Using the transfer function G, the output signal, i.e. the system behavior, can be analytically predicted for any input signal. The smoothing characteristic represents this system behavior and can be determined experimentally, for example. Typical of the system behavior is, for example, the time-delayed response of the output signal with respect to the input signal. The smoothing characteristic can represent, for example, at least one of the following parameters: a time delay, a gain factor, an order of the delay, a cut-off frequency, a resonant frequency (i.e. eigencircle frequency), a characteristic circuit frequency (or the time constant T reciprocal thereto), an attenuation factor and / or a phase relationship.The smoothing can be carried out, for example, by means of a decomposition (e.g. a frequency decomposition, e.g. a Fourier decomposition) of the deflection signal 302 a. This splits the deflection signal 302a into a series of signals of different frequency and / or phase. From the decomposed deflection signal 302 a, high frequency signals may then be selectively cancelled and / or attenuated and the remaining signals may be composited (e.g., superimposed) to form the second deflection signal 312 a. Alternatively or additionally, the smoothing can be effected by means of a convolution of the deflection signal 302 awith a filter core (often referred to as a filter only). For example, the folding can be effected by means of a rectangular filter. In this case, the value is clearly replaced at each point of the deflection signal 302 ain each case by the mean value of its neighbors. Weighted mean values can also be used, however.Alternatively or additionally, the method may include, in 403, amplifying the deflection signal 302 a, e.g. according to a gain characteristic and / or by means of an amplifier 306. For example, the amplifier 306 may implement the gain characteristic.The amplifying may include, for example, converting the first deflection signal 302 ato a second deflection signal 312 awhich has a greater signal strength (e.g. power) than the first deflection signal 302 a. The amplifier 306 may be understood as an electronic package having at least one active device (e.g., a transistor and / or an electron tube) that processes the incoming first deflection signal 302 asuch that the output quantity (i.e., the output signal strength) becomes greater than the incoming signal strength. For example, the amplifier can output more power on the output side than on the input side (i.e. at its signal input). The additional power may be provided to the amplifier 306 via a power source.The amplifier 306 may parasitically cause smoothing of the first deflection signal 302 a. The smoothing element 402 may parasitically cause the first deflection signal 302 ato be amplified and / or attenuated.For example, the smoothing element 402 and / or the amplifier 306 may both smooth and amplify the first deflection signal 302 a. However, the signal strength thereof is increased (i.e. amplified) by means of the smoothing element 402 less than by means of the amplifier 306, e.g. to less than approximately ten times, e.g. to less than approximately five times, e.g. to less than approximately twice. By means of the amplifier 306, a gain (i.e. increase of the signal strength) can be effected by more than approximately twice, e.g. more than approximately five times, e.g. more than approximately ten times, e.g. more than approximately fifty times, e.g. more than approximately hundred times. In other words, the smoothing element 402 may have a lower amplification factor than the amplifier 306.For example, the smoothing element 402 may have a gain factor of less than 1 (the inverse of which is also referred to as attenuation factor in the case). For example, the gain of amplifier 306 may be substantially equal to the attenuation of smoothing element 402, or these factors may deviate from each other at least less than about 50% (e.g., 25%, 10%, 5%, or 1%). For example, if the smoothing includes an exemplary attenuation by a factor of 2, then the amplifier may amplify by a factor of about 2.However, by means of the smoothing element 402, a smoothness of the deflection signal 302 ais changed (e.g. increased) more than by means of the amplifier 306, e.g. increased to more than approximately 200%, e.g. to more than approximately 400%, e.g. to more than approximately 1000%. By means of the smoothing element 402, the smoothing (i.e. reduction of the curvature) can take place substantially independently of the rate of rise and / or signal amplitude of the first deflection signal 302 a. In other words, the smoothing element 402 may be configured to convert the deflection signal 302 ainto a deflection signal of greater smoothness (e.g. 2nd order), i.e. of lesser curvature. N-th order smoothness can be understood to mean the quadratic mean of the n-th derivative (where n can be two, for example).FIG. 5 illustrates a method 500 according to various embodiments in a schematic flow diagram.The method 500 may include, in 501, providing data representing a time-dependent desired deflection of the electron beam.Method 500 may optionally include, in 503, ascertaining information (also referred to as rate of change information) which represents a rate of change of the setpoint deflection.The method 500 may include, at 505, forming a first deflection signal. The first deflection signal can optionally comprise a carrier signal and a correction signal superimposed on the carrier signal. The carrier signal may represent the desired deflection and the correction signal may represent the rate of change information.The method 500 may include, in 507: smoothing the first deflection signal 302 a. By means of the smoothing, the second deflection signal 312 acan be provided.The smoothing can be carried out, for example, according to a smoothing characteristic, for example, according to a filter characteristic.Optionally, the second deflection signal 312 amay be an amplified deflection signal at 505. For example, the first deflection signal may be amplified, e.g. before and / or after smoothing. Alternatively or additionally, the deflection signal can be smoothed, e.g. before and / or after the amplification.The method 500 may include, in 509: deflecting the electron beam based on the smoothed deflection signal.The method 500 may optionally include, in 511: changing the smoothing characteristic if the data, the setpoint deflection (e.g. its rate of change) and / or the deflection signal (e.g. its rate of change) meet a criterion.The changing of the smoothing characteristic can have, for example, changing a characteristic time constant T of the smoothing characteristic and / or changing a characteristic transmission constant K of the smoothing characteristic.The method 500 may optionally include: reducing a signal magnitude, e.g. signal strength (i.e. attenuation) and / or rate of change, of the correction signal when changing the smoothing characteristic. For example, reducing the signal magnitude of the correction signal may include setting the signal strength to a time-invariant value (e.g., zero). Illustratively, the smoothing can be interrupted, for example, if and / or as long as the smoothing characteristic is or is changed.For example, the method 500 may include reducing the signal magnitude of the correction signal 704 when the smoothing element bridges, reducing the characteristic time constant T of the smoothing characteristic and / or increasing the characteristic transmission constant K of the smoothing characteristic. Alternatively or additionally, the method 500 may comprise increasing the signal magnitude of the correction signal 704 when the bridging of the smoothing element is canceled, the characteristic time constant T of the smoothing characteristic is increased and / or a characteristic transmission constant K of the smoothing characteristic is decreased.For example, the characteristic transmission constant K can be changed by means of a digital signal, e.g. switched between two signal magnitudes.The changing of the characteristic transmission constant K may be optionally omitted. Alternatively, for example, in addition to the characteristic time constant T, the characteristic transmission constant K may also be changed.Reducing the correction signal can be used, for example, if the deflection signal is to follow a jump. Then, the smoothing can additionally be carried out in such a way that the signal level after the jump is the correct one. This can be achieved, for example, by selecting K=1. The same signal level as at the input can then be clearly established very quickly at the output of the smoothing.According to various embodiments, the smoothing may be performed in a first exemplary mode (illustratively a desired "linear" smoothing), wherein in the first mode T=t 0 / ln( 2) and K=2. Alternatively or additionally, the smoothing can take place in a second exemplary mode (illustratively at a desired jump), wherein in the second mode T is approximately 0 (i.e. is very small, e.g. positive and less than 0.1) and K=1.For example, the characteristic transmission constant K can be changed by switching between the first mode and the second mode. Alternatively or additionally, the characteristic transmission constant K can be changed by switching the characteristic transmission constant K between two values, for example between K<2 (e.g. K=1) and K≥2 (e.g. K=2).For example, the correction signal can be effected by means of the changeover of the characteristic transmission constant K, for example by changing over between two values, for example between K<2 (for example K=1) and K≥2 (for example K=2).Optionally, the switching of the characteristic transmission constant K may be omitted, e.g., when switching between the first mode and the second mode.The method 500 may be implemented by means of a control device 300 described herein.For example, the control device 300 may provide a plurality of operation modes, a first operation mode of which implements a first smoothing characteristic according to which a deflection signal is smoothed, and a second operation mode of which implements a second smoothing characteristic (different from the first) according to which the deflection signal is smoothed. Alternatively or additionally, the deflection signal can have a first correction signal in the first operating mode and a second (different from the first) correction signal in the second operating mode.The first smoothing characteristic can have, for example, a greater characteristic time constant T and / or a smaller characteristic transmission constant K than the second smoothing characteristic.The method 500 may optionally include: reducing a signal magnitude, e.g. signal strength and / or rate of change, of the correction signal when switching from the first smoothing characteristic to the second smoothing characteristic. For example, reducing the signal magnitude of the correction signal may include setting the signal strength to a time-invariant value (e.g., zero).The method 500 may optionally include: increasing a signal magnitude of the correction signal when switching from the second smoothing characteristic to the first smoothing characteristic. For example, increasing the signal magnitude of the correction signal may include setting the signal strength to a time-variant value (e.g., different from zero).The method 500 may optionally include: changing between the first operating mode and the second operating mode.The method 500 can optionally comprise: irradiating an item to be evaporated and / or a substrate by means of the deflected electron beam.The method 500 may optionally comprise: transporting a substrate in a vacuum region; and irradiating the substrate or an item to be coated on the substrate by means of the deflected electron beam, wherein, for example, a repeated passing through a deflection sequence is carried out, according to which the electron beam is deflected.FIG. 6 illustrates the method 500 according to various embodiments in a plurality of schematic diagrams illustrating a signal magnitude S (e.g. signal strength such as current and / or voltage) over time t.Diagram 601 shows the desired deflection, which is drawn in as desired deflection signal 602 (illustratively the deflection signal which ideally maps desired deflection W) for the sake of better illustration. Illustratively, the setpoint deflection can represent at which point in time and for which time duration t the electron beam 112 eis intended to irradiate which point of impingement P(x,y). The desired deflection signal represents the deflection signal that would be needed to deflect the electron beam 112e exactly according to the desired deflection W. The desired deflection W can be stored, called up and / or modified, for example, by means of data.Furthermore, a carrier signal 702 and a correction signal 704 are shown in diagram 601. The carrier signal 702 and / or the correction signal 704 may be intermediate products, for example, which are further processed to provide the second deflection signal 312 aafter. Alternatively or additionally, the carrier signal 702 and / or the correction signal 704 may denote a signal portion which is / are inherently formed and / or output together with the second deflection signal 312 a.The carrier signal 702 may be illustratively output by a DSP, for example, if no correction is made or if it operates entirely without correction.For example, the data may include at least one deflection parameter in the form of a function (i.e., from a function space) corresponding to curve 602. Alternatively or additionally, the deflection data can have, for example, time-discrete deflection parameters, the values of which correspond to the points W n and W n+1 in diagram 601.The data may be processed by the signal generator 302. For example, in clock t 0 of the signal generator, a signal variable S corresponding thereto (e.g. signal strength) can be generated. For example, the or each deflection parameter at the clock t 0 of the signal generator 302 may be converted into a signal strength S of the carrier signal 702.Due to the limited temporal resolution (i.e. the discrete-time mapping by means of the clock t 0), the signal magnitude S of the carrier signal 702 generated by the signal generator 302 may have a rectangular characteristic (illustratively steps).According to various embodiments, the method may include, in 601, ascertaining 503 information (also referred to as change information) representing a rate of change δa of the setpoint deflection W. The rate of change δa may be the temporal gradient of the desired deflection W, e.g., ΔW / Δt, e.g., ΔW / t 0. For example, the rate of change δa may be proportional to the difference ΔW between two values W n and W n+1 of the setpoint deflection W (also referred to as setpoint values W n and W n+1 ), e.g. between a first (illustratively old) setpoint value W n= W(t=t n) and a subsequent second (illustratively new) setpoint value W n+1= W(t=t n+1), and indirectly proportional to the clock duration t 0. The clock duration t 0 may be the inverse of the clock frequency f t and / or equal to Δt=t n+1- t n. The index n may be, for example, a natural number.The change information may alternatively or additionally be related to the electron beam 112 e. For example, the change information can represent or be a spatial distance between two successive target locations of incidence (e.g. a jump width), an angular velocity of the movement of the electron beam, a (e.g. scalar and / or temporal) difference of two successive deflection parameters, or the like.Alternatively or additionally, the change information can be related to a reference signal, e.g. the carrier signal 702 and / or the desired deflection signal 602. For example, the change information can represent or be a value difference, a step height, a temporal gradient, or the like of the reference signal.For example, the change information can represent the difference of the signal magnitude S of the reference signal between two times t n and t n+1. The two points in time t n and t n+1 can have a distance at the level of the time interval t 0. The time interval t 0 can be, for example, a clock duration (i.e. period duration of the clock) with which the deflection signal 302 ais formed.In diagram 601, the correction signal 704 or its signal variable can optionally be time-invariant (e.g. zero).Diagram 603 illustrates a signal 604 to be smoothed, e.g. a square-wave signal 604, and a smoothed signal 604 gformed therefrom by means of smoothing in a detailed view. The smoothed signal 604 gmay have, for example, a step response to the signal 604 to be smoothed or be formed therefrom. Then, the smoothing characteristic may represent, for example, a step response function.The signal 604 to be smoothed can have or be formed from, for example, the first deflection signal 302 aand / or the carrier signal 702 and optionally the correction signal 704. The smoothed signal 604 gmay include or be formed from the smoothed carrier signal and optionally the smoothed correction signal 704 and / or the second deflection signal 312 a, for example.The step response can be implemented, for example, by means of the smoothing element, e.g. by means of a PT n- element. PT n- element can be understood to mean a linear time-invariant system (LZI system) which has a proportional transmission behavior with n-th order delay. The parameter n can be, for example, 1 or 2. In general, the smoothing element can have or be formed from a PT 1- element and / or a PT 2- element, for example. The PT n- element can have, for example, an n-th order low-pass filter or be formed therefrom. For example, the PT 1- element can have a 1-th order low-pass filter or be formed therefrom.The increase and / or the curvature of the step response can depend on the smoothing element used and / or its smoothing characteristic. For example, a steeper and / or flatter step response 604 pmay result than the ones illustrated.The signal magnitude S 604g of the smoothed signal 604 gmay be: S 604g= G(S 604). as a function of the time and the signal magnitude S 604 of the signal 604 to be smoothed.The smoothing characteristic G(t) can, for example, fulfil the following relation (also referred to as step response relation): or related to a predefined signal strength S nThe asymptotic value S n describes the signal magnitude to be achieved for S(t=t n) or the magnitude of the step function.In this case, G(S n, t), or more generally G(S(t),t), can denote the signal magnitude of the smoothed signal over time t, and K can denote the characteristic amplification factor and T can denote the characteristic time constant (also denoted as τ) of the smoothing characteristic G. In general, G can be defined at least by the parameters T and K. If the smoothing characteristic brings about attenuation, K<1, for example.The characteristic time constant T can be understood as the time duration required for a process (e.g. exponentially decreasing or increasing) to decrease to 1 / e (about 36.8%) of its initial value or to increase to 1-1 / e (about 63.2%) of its final value (i.e. the asymptotic value thereof).The curve S(t) approximates asymptotically to the final value K for large t. After time t=T, S(t=T) takes the value 0.63·K, and after t=3T, S(t=T) takes the value 0.95·K. For K=1, the asymptotic value coincides with the upper value of the rectangular function 604. The value K / 2 is obtained at about t=0.69·T.FIG. 7 illustrates the method 500 according to various embodiments in a plurality of schematic diagrams illustrating a signal magnitude S (e.g. current and / or voltage) over time t.In diagram 701, the desired deflection by the desired deflection signal 602 is illustrated. For comparison, the carrier signal 702 is illustrated in the first interval of the desired deflection and the correction signal 704 is illustrated in the second interval. In diagram 703, these are illustrated in comparison with the first deflection signal 302 a.The first deflection signal 302 amay include or be formed from a superposition of the carrier signal 702 and the correction signal 704, e.g. a superposition (e.g. addition) thereof. The first deflection signal 302 amay be formed, for example, from the carrier signal 702 and from the correction signal 704. Alternatively or additionally, the carrier signal 702 and the correction signal 704 may be signal portions of the first deflection signal 302 a, which are or may be inherently formed in forming the first deflection signal 302 a.FIG. 8 illustrates the method 500 according to various embodiments in a plurality of schematic diagrams illustrating a signal magnitude S (e.g. current and / or voltage) over time t.In diagram 801, the smoothing of the signal 604 to be smoothed (e.g. of the carrier signal 702 or of the first deflection signal 302) is exemplarily illustrated.In order for the smoothed signal 604 gto come as close as possible to the setpoint deflection, K >1 (e.g. K=2) and / or T>t may be 0( e.g. T=t 0 / Ln( 2)). This has the consequence that essentially the approximately linear part of the step response curve is utilized.However, if only the carrier signal 702 or without the correction signal 704 is smoothed (for example with K=2), a considerable time delay (dotted area) arises between the smoothed signal 604 gand the setpoint deflection and optionally a deviating amplitude. The superimposed correction signal 704 may reduce this time delay, as will be explained in more detail below. The deviating amplitude clearly results from the asymptotic approach of the smoothed signal to the desired signal strength, and the deviation thereof increases, each time none of the ratio (t n+1- t n) / is T. Illustratively, the smoothed signal lags behind the unsmoothed signal in time, so that fast changes of the unsmoothed signal are hardly transmitted to the smoothed signal and / or are transmitted too late.Diagram 803 illustrates the smoothing of the first deflection signal 302 a, which has the correction signal 704. In order that the smoothed deflection signal 312 acomes as close as possible to the desired deflection, the carrier signal 702 may be superimposed with the correction signal 704 to form the first deflection signal 302 a. This results in the deflection signal 302a having a greater swing in signal strength S than the carrier signal 702, such that the smoothed deflection signal 312a leads the smoothed carrier signal 604g. This compensates for the time delay. Illustratively, the carrier signal 702 may be the signal output by a DSP, for example, if no correction is made.For example, the correction signal 702 may be configured such that, at one or each clock t n the signal strength S 604g of the smoothed signal 604 gis equal to the signal strength S 602 of the desired signal 602, i.e. S 604g( t n) = S 602( t n). Alternatively or additionally, the correction signal 702 may be configured such that after a clock, i.e. at the time t=t n+1, the signal strength S 604g of the smoothed signal 604 gis equal to the signal strength S 702 of the setpoint signal 602 before the clock, i.e. at the time t=t n, i.e. S 604g( t n+1) = S 702( t n).The signal magnitude S of the deflection signal 302 a(also referred to as S A( t)) may depend, for example, on the signal magnitude S of the carrier signal 702 (also referred to as S T( t)) and the signal magnitude S of the correction signal 704 (also referred to as S K( t)).For example, the deflection signal 302 amay satisfy the relation S A( t)=S(S T( t), S K( t)), e.g. S A( t)=S T( t)+S K( t).The signal magnitude S K of the correction signal 704 may be provided according to a plurality of methods. The signal magnitude S K of the correction signal 704 can be proportional or equal to the rate of change δa, for example proportional or equal to the difference between two (e.g. consecutive) setpoint values W n and W n+1 e.g. between a first setpoint value W n= W(t=t n) and a subsequent second setpoint value W n+1= W(t=t n+1), e.g. W n+1= W(t+t 0)). The clock duration t 0 may be the inverse of the clock frequency f t and / or equal to t n+1- t n.For example, the signal magnitude S K of the correction signal 704 may satisfy the following relationship: dS K( t)=dB+P·δa(t)dt and / or S K( t)=B(S=P·δa(t)·Δt ). The expression dS K( t) / dt can denote the time derivative of S K( t), the parameter P can be a scaling factor of the formation rule B, which can be adapted, for example, as required. For example, P >1 (e.g., equal to about 2), e.g., may be between about 1 and about 5. By way of example, S may be K( t)=B(S=P·(W(t)-W(t n+1)) e.g., S K( t)=B(S=P·(W(t)-W(t+t 0))).Optionally, the scaling factor P and / or the signal variable S K( t) of the correction signal 704 may be adapted to a grid frequency, by means of which the electron beam 112 eis electrically supplied.FIG. 9 illustrates the method 500 according to various embodiments in a schematic diagram 901, which illustrates a signal magnitude S (e.g. current and / or voltage) over time t.In order that the smoothed deflection signal 312 acomes as close as possible to the desired deflection, the parameters K and T of the smoothing characteristic can be related to one another and to the clock t 0. The parameter K is also referred to as the transmission constant K.For example, the parameters K and T of the smoothing characteristic can be selected such that the step response S(t) at S(t=t 0) is substantially 1 or deviates therefrom at least by less than 20%. If K=2 and satisfies the smoothing characteristic of the step response relation, T=t may be 0 / ln(2), for example, about T=1.44·t 0. Generally, the parameters K and T may satisfy the relation T=-t 0 / ln(1-(1 / K)) (for any K), or more simply T=t 0 / ln(K / (K-1)), and / or may deviate less than 20% therefrom. Alternatively or additionally, S(t=t 0) may be proportional to ΔW.Alternatively or additionally, the correction signal 704 can be adapted to the smoothing characteristic G in such a way that the following relationship is fulfilled:G(S A( t))=S T( t) or at most about 20% thereof. Alternatively or additionally, the following relation can be fulfilled or G(S A( t+t 0))= S A( t) or at most approximately 20% thereof will be deviated therefrom. The time t can be, for example, at the clock t=t n= n·t 0 and / or it can be S A( t)=S T( t)+S K( t) or S A( t+t 0)= S T( t+t 0)+ S K( t+t0).FIGS. 10A to 10C each illustrate a circuit 1000 in the method 500 in different configurations 1000 ato 1000 caccording to various embodiments in a schematic circuit diagram.The circuit 1000 may be part of the control device 300 and may, for example, generally be configured to ascertain the change information and to form the deflection signal 302 ato be smoothed.In 1000 a, the circuit 1000 may include a correction unit 1002 configured to acquire the data 304 dtransmitted from the data unit 304 to the digital-to-analog converter 1004 and to provide corrected data 314 d, which take account of the change information, on the basis of the data 304 d. The change information may be determined based on the data 304 d, for example. The data 304 dmay be transmitted, for example, as a digital signal stream and processed by the correction unit 1002. For this purpose, the correction unit 1002 may have a processor, e.g. a digital signal processor, or be formed therefrom, for example.In 1000 b, the circuit 1000 may include a correction unit 1002 configured to read out the data 304 dof the data unit 304 and provide the corrected data 314 d, which takes into account the change information, to the latter. Providing the corrected data 314 dmay include, for example, modifying the data 304 dand / or adding additional data thereto. Alternatively or additionally, the correction unit 1002 may form the corrected data 314 dand store it in the data unit 304. The change information may be determined based on the data 304 d, for example.In 1000 aand 1000 b, the corrected data 314 dmay then be converted into the first deflection signal 302 aby means of a digital-to-analog converter 1004.In 1000 aand 1000 b, the correction unit 1002 and the data unit 304 can be part of a beam guidance computing unit and / or can be provided by means of it, for example.In 1000 c, the circuit 1000 may include a correction unit 1002 configured to detect the carrier signal 702 provided by the digital-to-analog converter 1004 and to superimpose the correction signal 704 thereon. The correction signal 704 may be provided (e.g. determined and / or generated) based on the change information, for example. Alternatively or additionally, the change information may be provided (e.g. determined and / or generated) based on the data 304 dand / or based on the carrier signal 702, for example.The correction unit 1002 may be configured in 1000 c,for example, to process an analog signal. For this purpose, the correction unit 1002 can have a digital signal processing system or be formed therefrom, for example. The signal processing system may include at least one signal processor connected between a DAC and an analog-to-digital converter (ADC). Alternatively or additionally, the correction unit 1002 may include or be formed from a comparator (in other words a 1-bit ADC) and / or an amplifier (e.g. a differential amplifier).In general, the correction unit 1002 can also be implemented by means of software, e.g. on a computing unit.FIGS. 11A to 11C illustrate a circuit 1100 in the method 500 in various configurations 1100 ato 1100 caccording to various embodiments in a schematic circuit diagram, e.g. the circuit 1000.The circuit 1100 may be part of the control device 300 and may be generally configured, for example, to form a deflection signal 302 aand to change the smoothing characteristic.In 1100 a, the circuit 1100 may include a modification unit 1102, which is configured to acquire the data 324 dtransmitted from the data unit 304 to the DAC 1004 and to provide a modification signal 1101 on the basis of the data 324 dwhen the data 324 ddeceeds a predefined criterion. The data 324 dmay be transmitted to the DAC 1004 as a digital signal stream, for example, and processed by the modification unit 1102.In 1100 b, the circuit 1100 may include a changing unit 1102, which is configured to read out 1102 aof the data unit 304 and to provide a changing signal 1101 on the basis of the data 324 d.In 1100 aand / or 1100 b, the data 324 dmay include or be formed from, for example, the data 304 dprovided by the data unit 304 and / or the corrected data 314 dprovided by the correction unit 1002.The change signal 1101 may be determined in 1100 aand 1100 bbased on the data 324 d, for example. For this purpose, the modification unit 1102 can have a digital signal processor or be formed therefrom, for example.In 1100 aand 1100 b, the data 324 dmay be converted into the analog signal 1104 s, for example, by means of a digital-to-analog converter 1004. In 1100 aand 1100 b, the analog signal 1104 sprovided by the digital-to-analog converter 1004 may include at least one of the carrier signal 702, the correction signal 704 and / or the first deflection signal 302 a.In 1100 aand 1100 b, the modification unit 1102 and the data unit 304 can optionally be part of a beam guidance computing unit and / or be provided by means of it. Alternatively or additionally, the modification unit 1102 and the data unit 304 can comprise a semiconductor component and / or be provided by means of software.In 1100 c, the circuit 1100 may include a changing unit 1102, which is configured to detect the analog signal 1104 sprovided by the digital-to-analog converter 1004 (e.g. the carrier signal 702, the correction signal 704 and / or first deflection signal 302 a) and on the basis thereof provide the changing signal 1101. The correction unit 1002 may otherwise be configured in 1100 c, for example, as in 1000 bor 1000 a.The change signal 1101 provided by the switching circuit 1100 may be configured to change the smoothing characteristic, namely if the data 324 dand / or the analog signal 1104 s fulfil a criterion. The criterion may be fulfilled, for example, if the data 324d indicates that the rate of change of the desired deflection exceeds a predefined threshold value. Alternatively or additionally, the criterion may be fulfilled if the rate of change of the analog signal 1104 sexceeds a predefined threshold value.The criterion can clearly represent that the electron beam 112 eis intended to perform a rapid and / or abrupt movement, for example to another region of incidence.Alternatively or additionally, the data may include an instruction (also referred to as a jump instruction) for changing the smoothing characteristic. The jump instruction can signal to the change unit 1102, for example, that when and / or how long the change signal 1101 is to be provided (e.g. output) and / or the smoothing is to be reduced (e.g. interrupted).For example, a jump instruction of the first type (illustratively of the type "jump to the figure") can specify that a jump is to be made to another, for example to the next, deflection figure during a figure change (illustratively of the figure property "jump to the figure"). The jump instruction of the first type instructs the deflection system 112 a, for example, that, when the electron beam 112 eis aligned with the starting coordinate and / or another reference point of the other deflection figure, the smoothing is reduced (e.g. interrupted).For example, a jump instruction of the second type (illustratively of the type "jump in figure repetition") can specify that jump should be made within the same deflection figure, in the case of which at least partial repetition and / or continuation thereof at another point. The second type jump instruction instructs the deflection system 112 ato reduce (e.g., interrupt) the smoothing when aligning the electron beam 112 ewithin the same deflection figure to its starting coordinate and / or another reference point of the same deflection figure, e.g., when its ending coordinate is reached.For example, a jump instruction of third type (illustratively of the type "always jump") can indicate that jump is to be made within the entire deflection figure. The jump instruction of the third type instructs the deflection system 112 ato reduce (e.g. interrupt) the smoothing when the entire deflection figure is scanned by means of the electron beam 112 e.Alternatively or additionally, the data can have a jump indicator which is assigned to a deflection parameter. The jump indicator can indicate, for example, that or how the smoothing characteristic is to be changed for this deflection parameter. For example, the changing unit 1102 may provide the changing signal 1101 only for this parameter and / or according to the jump indicator. The jump indicator can represent a figure property, for example.A jump can be understood to mean that the smoothing is reduced (e.g. deactivated), so that a change in location of the electron beam 112 ecan take place at maximum speed.Optionally, the modifying unit 1102 may be part of the digital-to-analog converter 1004.FIGS. 12A to 12C each illustrate a smoothing element 402 in the method 500 in different configurations 1200 ato 1200 caccording to various embodiments in a schematic circuit diagram.The smoothing element 402 may include a signal processor 1202 in 1200 a. The signal processor may implement the smoothing characteristic, e.g., a frequency filter characteristic. The signal processor 1202 can be configured to change at least one smoothing characteristic when the change signal 1101 is coupled into it.The smoothing element 402 may include at least one PT n- element 1204 in 1200 b. The parameter n may be, for example, 1 or 2 and may indicate the order of the delay of the PT n- element 1204. The PT n- element may have, in 1200 b, for example, at least one filter 1204 (e.g. n-th order) and / or an operational amplifier. For example, the filter can have at least one low-pass filter and / or bandpass filter or can be formed therefrom.The at least one PT n- element 1204 (e.g. the at least one filter 1204) can be active or passive. The at least one PT n- element 1204 (e.g. the at least one filter 1204) can optionally be at least partially electronically embodied and / or implemented by means of software. The at least one active PT n- element 1204 (e.g. the at least one active filter 1204) may comprise, for example, at least one active semiconductor component (such as a transistor and / or operational amplifiers).The at least one PT n- element 1204 may implement the at least one smoothing characteristic. For example, the at least one filter 1204 may implement the at least one frequency filter characteristic.The smoothing element 402 may have at least one crossover 1206 in 1200 c. The at least one crossover 1206 may be active or passive. The at least one crossover 1206 may optionally be electronically designed and / or implemented by means of software. The at least one crossover 1206 may implement the at least one smoothing characteristic.A filter may be configured to attenuate and / or suppress undesired signal portions of the incoming first deflection signal 302 a, e.g. to a greater extent the higher its frequency is. A crossover can be configured for frequency-selective splitting of the incoming first deflection signal 302 a, for example on two or more outputs, of which one output outputs the second deflection signal 312 a.The smoothing element 402 may optionally include a variable (e.g. switchable) circuit component 1108 in 1200 band 1200 c. The circuit component 1108 may have and / or implement, for example, at least two states, between which it may be changed by means of the change signal 1101. The circuit component 1108 may be coupled to the crossover 1206 or the PT n- element 1204 such that a change in the component 1108 causes a change in its smoothing characteristic.The circuit component 1108 can comprise a semiconductor component and / or be provided by means of software, for example.Optionally, the at least one smoothing characteristic can have at least two smoothing characteristics, between which switching is carried out according to the injected change signal 1101. For example, the at least one PT n- element 1204 may have at least two PT n- elements 1204, which differ in their smoothing characteristic, between which switching is switched back and forth by means of the circuit component 1108. Alternatively or additionally, the at least one crossover 1206 may have at least two crossovers 1206, which differ in their smoothing characteristic, between which the circuit component 1108 switches back and forth.Optionally, the at least one smoothing characteristic may be defined by an impedance (e.g. capacitive impedance, inductive impedance and / or ohmic impedance), wherein the impedance is switched, coupled and / or bridged by means of the circuit component 1108 according to the coupled change signal 1101. For example, the at least one PT n- element 1204 and / or the at least one crossover 1206 may have the impedance that is bridged and / or switched by means of the circuit component 1108. Alternatively or additionally, the at least one PT n- element 1204 and / or the at least one crossover 1206 may have at least more than one impedance (e.g., capacitive impedance, inductive impedance, and / or ohmic impedance) between which the circuit component 1108 switches back and forth.The or each impedance can be provided, for example, by means of an ohmic resistor (the ohmic impedance), a capacitor (the capacitive impedance) and / or a coil (the inductive impedance).Optionally, the at least one smoothing characteristic can be defined by a cut-off frequency (e.g. of the filter 1204 and / or the crossover 1206) of the smoothing element 402, e.g. a separation frequency, wherein the cut-off frequency can be changed by means of the change signal 1101.FIG. 13 illustrates the method 500 according to various embodiments in a plurality of schematic diagrams illustrating a signal magnitude S (e.g. current and / or voltage) over time t.In diagram 1300 a, the analog signal 1104 s(e.g., the carrier signal 702 and / or first deflection signal 302 a) and the desired deflection signal 602 are illustrated as representing the desired deflection.In diagram 1300 b, a change signal 1101 is illustrated, which causes a change in the smoothing characteristic as soon as it is detected (e.g. by means of the change rate of the analog signal 1104 s) that a change rate of the desired deflection satisfies the criterion (e.g. exceeds a threshold value).In diagram 1300 c, a change signal 1101 is illustrated, which causes a change in the smoothing characteristic as soon as it is detected (e.g. by means of a signal magnitude of the analog signal 1104 s) that a strength and / or rate of change of the desired deflection meets the criterion (e.g. exceeds a threshold value).The threshold may be (e.g., in 1300 band / or 1300 d), for example, the maximum input voltage of the amplifier 306 and / or the maximum output voltage of the deflection signal generator 302. Illustratively, an automatic jump is provided if, for example, the available output voltage range of the deflection signal generator 302 is not sufficient for a jump increase. Then, the altering unit 1102 (e.g., its software) may automatically disable smoothing and optionally output the un-peaking jump (i.e., only setting the carrier signal 702 and / or the correction signal 704 to zero) (which allows for using a lower signal processor voltage range).Alternatively or additionally, the threshold may be a rate of rise, slope, or the maximum rate of rise or fall of the output voltage of the amplifier 306 (e.g., its operational amplifier). Illustratively, if the smoothed analog signal 1104 shas a rate of change exceeding the threshold value, it would not have to be smoothed, for example.Alternatively or additionally, the threshold value may be an angle (e.g., a solid angle) by which the electron beam 112 eis to be deflected (e.g., from its original propagation direction). Illustratively, the smoothing can be reduced, for example, in the circumferential region of the space which is spanned by the maximum deflection angle by which the electron beam 112 eis deflectable.In diagram 1300 d, a change signal 1101 is illustrated, which causes a change in the smoothing characteristic as soon as it is detected that the data 324 ddeceeds the criterion. For example, the data 324 dmay fulfil the criterion if a switch is made between two subsequences (e.g. differing in their region of incidence 802 a, 802 band / or their deflection figure) within a deflection sequence, a subsequence (e.g. comprising a deflection figure) is started and / or ended, and / or the entire deflection sequence is started and / or ended. Alternatively or additionally, the data 324 dmay fulfil the criterion if they comprise a jump instruction and / or a jump indicator.The jump instruction can define (define) a duration and / or a time of the change signal 1101 to be output, for example.Optionally, the signal magnitude, e.g. signal strength, of the correction signal 704 may be set to a time-invariant value (e.g. zero) when (e.g. as long as) the change signal 1101 causes a change in the smoothing characteristic, e.g. when (e.g. as long as) the change signal 1101 is in a high state (e.g. a digital 1). Illustratively, the correction can be switched off as long as no smoothing or a weaker smoothing takes place. This prevents the corrected deflection signal from being output to the deflection unit in an unsmooth manner and producing errors.For example, the signal magnitude of the correction signal 704 may be reduced if a characteristic time constant T of the smoothing characteristic is reduced and / or a characteristic transmission constant K of the smoothing characteristic is increased. Alternatively or additionally, the signal magnitude of the correction signal 704 may be increased if the characteristic time constant T of the smoothing characteristic is increased and / or a characteristic transmission constant K of the smoothing characteristic is decreased.For example, the change signal 1101 can be pulsed (e.g. have a pulse duration 1101 dand / or pulse characteristic). Optionally, the signal magnitude, e.g. signal strength, of the correction signal 704 may be set to the time-invariant value (e.g. zero) according to the pulse duration 1101 dand / or pulse characteristic.Optionally, the change signal 1101 may switch the smoothing characteristic to the state of stronger smoothing when (e.g., as long as) the DAC converts a new set point to an analog voltage and / or the provided analog signal 1104 sis in a transition state. Disturbances of the deflection signal due to signal delay differences and signal overshoot can thereby be reduced or prevented.FIG. 14A illustrates a control device 1400 ain the method 500 according to various embodiments in a schematic circuit diagram, e.g. the control device 300. 1450 may denote a reference potential, e.g. electrical ground.The smoothing element 402 may implement a first-order low-pass filter, for example. For this purpose, the smoothing element 402 can have, for example, a capacitor 1403 (having the capacitance C) and an ohmic resistor 1402 (having the resistance R), i.e. an RC circuit, in a low-pass filter configuration.The variable (e.g., switchable) circuit component 1108 may include a switch 1108, e.g., a transistor 1108, connected in parallel with the resistor 1402. Alternatively or additionally (not shown), switch 1108 may be connected in series with capacitor 1403, e.g., between node 1450 and resistor 1402. In order to prevent the capacitor 1403 from maintaining its state of charge (i.e. its voltage) or from disturbing the signal 312a with it when it is disconnected from the resistor 1402 (i.e. when the switch is opened) or with it when it is switched back to the resistor 1402 (i.e. when the switch is closed), an additional circuit may be required, e.g. in order to achieve the same behavior as the arrangement shown.The switch 1108 may, for example, bypass the resistor 1402 in a first state (illustratively closed state) and be non-conductive in a second state (illustratively open state).For example, if the smoothing element 402 comprises an RC circuit in a low pass filter configuration and / or a low pass filter (first order), T=C·R may be where C is the capacitance of the low pass filter and R is the resistance (also referred to as ohmic impedance) of the low pass filter.For example, the modification unit 1102 may include and / or provide a digital output of the deflection signal generator 302 (e.g. of the signal processor).For example, the first order low pass filter 1402, 1403 may be provided in the signal path to achieve a near linear voltage response between 2 clocks of the DAC voltage generation 302 a. To this end, jumps in the generated DAC voltage 302 amay be or will become excessive. This low-pass filter 1402, 1403 (e.g. ramp function) can be selectively deactivated and / or inhibited for individual output clocks by means of an additional digital signal 1101.In the signal processor, the output signal 302 amay be changed, for example, in such a way that jumps are amplified (e.g. by the factor P) before the DAC conversion. For example, a doubling of the jump height, i.e. P=2, can be provided. This can be achieved by outputting a corrected value as a new desired value W korr( t) instead of the actual old desired value W(t).For example, the deflection signal 302 amay have a signal strength S A( t, W korr( t)) provided (e.g. output) according to the relation W korr( t)=W n( t)+P·(W n+1( t)-W n( t)). Generally, P >1 may be, e.g., between about 1 and 5.For example, S may be A( t)=S K( t)+S T( t), where S is T( t)=B(S=W n( t)) and S is K( t)=B(S=P·(W n+1( t)-W n( t)).A subsequent PT 1- element can be dimensioned in such a way that the old setpoint value W n( t) is reached exactly after the expiration of a clock cycle (i.e. after the time duration t 0) i.e. W korr( t+t 0)= W n( t). The voltage at the output of the PT 1 changes until then approximately linearly, since only the first part of the impulse response of the PT 1- element comes to bear. In the next clock cycle, the next ramp can be started starting from the voltage reached. In order to be able to achieve fast jumps at certain processors, the filter time constant T can be reduced (clearly drastically shortened) with a digital signal 1101 in individual clocks and / or the jump increase can be suspended at the same time. For this purpose, for example, the resistance of an RC circuit is bridged.The required voltage swing at the signal processor output can then be required, for example, (2·x-1) times as large as the voltage range of the amplifier input. The height of the PT 1- voltage response after a cycle time can be equal to the jump height / x in the case of the dimensioning mentioned above.Alternatively, the couplable voltage swing at the signal processor output may correspond to the couplable voltage swing at the amplifier input and the signal processor software may omit PT 1- smoothing at jumps that would require too large a signal processor output voltage (cf. 1300 c). In practice, this method results in no loss or only very little loss in the deflection quality, because only large jumps in the direction of the edge are affected.Optionally, the signal 1102 smay also be converted by means of oversampling ("oversampling") into finer steps, which in turn may then be smoothed (e.g. ramped) using a smoothing element (e.g. PT 1) as described herein. In this case, a fast jump can be generated without changing the smoothing characteristic (e.g. without additional digital signal 1101) by already covering the entire jump stroke in the first oversampling clock and subsequently outputting a constant voltage for the remaining oversampling clocks.A PT 1- element has a constant time characteristic T according to various embodiments. The step-up factor can be or can be exactly matched to this time constant, so that the new setpoint value at the output of the smoothing element (e.g. PT 1- output) is substantially (e.g. exactly) reached after the time duration of a clock (t 0). In other words, approximately G(S A( t+t 0))= S A( t) may be satisfied.According to various embodiments, the functions, rules and / or characteristics described herein may optionally comprise applying at least one transformation of the following group of transformation: scaling (stretching, or respectively stretching, and / or respectively compressing), translation (shifting), rotation (rotation) or shearing (transvection). A plurality of transformations can be combined with one another and / or carried out one after the other for adapting the deflection signal, for example by means of the multiplier. The transformation(s) can / can, for example, spatially and / or temporally transform.Various examples relating to those described above and illustrated in the figures will be described below.Example 1 is a method 500 for providing an electron beam 112 e, the method 500 comprising: providing 501 data representing a time-dependent desired deflection of the electron beam 112 e; ascertaining 503 information representing a rate of change of the desired deflection; forming 505 a deflection signal 302 a, wherein the deflection signal 302 aincludes a carrier signal 702 and a correction signal 704 superimposed on the carrier signal 702, wherein the carrier signal 702 represents the desired deflection and the correction signal 704 represents the information; smoothing 507 the deflection signal 302 a; deflecting 509 the electron beam 112 ebased on the smoothed deflection signal 302 a.Example 2 is a method 500 according to example 1, wherein the data comprise a plurality of parameters representing a temporal sequence of the desired deflection, wherein the information represents a (e.g. scalar and / or temporal) difference between two (e.g. consecutive according to the temporal sequence) parameters of the plurality of parameters.Example 3 is a method 500 according to example 1 or 2, further comprising: forming corrected data on the basis of the data and the information, wherein the forming of the deflection signal 302 ais carried out on the basis of the corrected data.Example 4 is a method 500 according to one of Examples 1 to 3, further comprising: forming the carrier signal 702 on the basis of the data, forming the correction signal 704 on the basis of the information; and superimposing the carrier signal 702 and the correction signal 704 with one another, e.g. modulating (amplitude modulating) the correction signal 704 onto the carrier signal 702.Example 5 is a method 500 according to one of Examples 1 to 4, wherein the correction signal 704 is constant or zero in a period in which the setpoint deflection and / or its rate of change is constant.Example 6 is a method 500 according to one of Examples 1 to 5, wherein a signal strength of the correction signal 704 represents the rate of change of the desired deflection.Example 7 is a method 500 according to any of examples 1 to 6, wherein a rate of change of the carrier signal 702 and a rate of change of the correction signal 704 are proportional to each other.Example 8 is a method 500 for providing an electron beam 112 e, the method 500 comprising: providing 501 data representing a time-dependent desired deflection of the electron beam 112 e; forming 505 a deflection signal 302 abased on the data; smoothing 507 the deflection signal 302 aaccording to a smoothing characteristic; deflecting 509 the electron beam 112 ebased on the smoothed deflection signal 302 a; changing 511 the smoothing characteristic if the data and / or the deflection signal 302 acontains a criterion.Example 9 is a method 500 according to example 8, changing the smoothing characteristic if at least one of the following properties of the deflection signal 302 apreceeds the criterion: a rate of change of the deflection signal 302 a; a peak-to-valley value (e.g. voltage swing) of the deflection signal 302 a; and / or a signal strength of the deflection signal 302 a.Example 10 is a method 500 according to example 8 or 9, wherein the data comprises a plurality of parameters representing a temporal sequence of the desired deflection, wherein the data for a parameter of the plurality of parameters meet the criterion if the data further comprises an indicator assigned to the parameter.Example 11 is a method 500 according to example 8 or 10, wherein the data comprise an indication which defines when and / or for which duration the criterion is fulfilled; wherein the changing of the smoothing characteristic takes place according to the indication.Example 12 is a method 500 according to example 8 or 11, wherein the data comprises an instruction for changing the smoothing characteristic, wherein the changing of the smoothing characteristic takes place according to the instruction.Example 13 is a method 500 according to any of Examples 8 to 12, wherein the data comprise a deflection sequence, wherein the criterion is fulfilled at the beginning and / or at the end of the deflection sequence; wherein the deflection of the electron beam 112 eis effected a plurality of times (e.g. periodically) according to the deflection sequence; and / or wherein the deflection signal 302 aincludes a plurality of sections, each section of which represents the deflection sequence.Example 14 is a method 500 according to one of Examples 8 to 13, wherein the smoothing characteristic remains unchanged at least for a period in which the criterion is not fulfilled.Example 15 is a method 500 according to any of Examples 8 to 14, wherein the changing of the smoothing characteristic comprises changing between exactly two smoothing characteristics which differ from one another (e.g. in their characteristic delay, their order, their gain and / or their characteristic time constant); and / or wherein the changing of the smoothing characteristic comprises reducing a characteristic variable of the smoothing characteristic (e.g. their delay, their order, their gain and / or their characteristic time constant).Example 16 is a method 500 according to one of Examples 8 to 15, wherein changing the smoothing characteristic comprises interrupting the smoothing.Example 17 is a method 500 according to one of Examples 1 to 16, wherein the smoothing of the deflection signal 302 acomprises: filtering the deflection signal 302 a.Example 18 is a method 500 according to any of examples 1 to 17, wherein the smoothing of the deflection signal 302 acomprises: low-pass filtering the deflection signal 302 a(e.g. first order).Example 19 is a method 500 according to one of Examples 1 to 18, wherein the deflection signal 302 ais an analog signal.Example 20 is a control device 300, 1400 aof an electron beam 112 e, the control device 300, 1400 acomprising: a data unit 304 which is configured to provide data, wherein the data represent a time-dependent desired deflection of the electron beam 112 e; a smoothing element 402; a switching circuit 1000, 1100 which is coupled between the data unit 304 and the smoothing element 402 and is configured to ascertain an information item which represents a rate of change of the desired deflection; and to form a deflection signal 302 a, wherein the deflection signal 302 aincludes a carrier signal 702 and a correction signal 704 superimposed on the carrier signal 702, and to couple the deflection signal 302 ato the smoothing element 402, wherein the carrier signal 702 represents the desired deflection and the correction signal 704 represents the information item.Example 21 is a control device 300, 1400 aaccording to example 20, wherein the circuit 1000, 1100 comprises a digital-to-analog converter and a correction element; wherein the correction element is configured to change at least one of the following on the basis of the information: the data and / or a signal coupled out from the digital-to-analog converter.Example 22 is a control device 300, 1400 aof an electron beam 112 e, comprising: a data unit 304 configured to provide data, wherein the data represent a time-dependent desired deflection of the electron beam 112 e; a smoothing element 402 implementing a (e.g. variable) smoothing characteristic; a switching circuit 1000, 1100 coupled between the data unit 304 and the smoothing element 402 and configured to couple the deflection signal 302 ato the smoothing element 402 on the basis of the data; and to change the smoothing characteristic if the data, the desired deflection (e.g. its rate of change) and / or the deflection signal 302 a(e.g. its rate of change) meet a criterion.Example 23 is a control device 300, 1400 aof example 20 or 21, wherein the switching circuit 1000, 1100 is configured to detect at least one property of the following properties of the deflection signal 302 a: a rate of change of the deflection signal 302 a; a peak-to-valley value (e.g. voltage swing) of the deflection signal 302 a; and / or a signal strength of the deflection signal 302 a; wherein the switching circuit 1000, 1100 is configured to change the smoothing characteristic if the properties meet the criterion.Example 24 is a control device 300, 1400 aof example 20 or 22, wherein the data comprises an instruction for changing the smoothing characteristic; wherein the switching circuit 1000, 1100 is configured to change the smoothing characteristic in accordance with the instruction.Example 25 is a control device 300, 1400 aaccording to one of Examples 20 to 23, wherein the data comprise a deflection sequence, wherein the criterion is fulfilled at the beginning and / or at the end of the deflection sequence.Example 26 is a control device 300, 1400 aaccording to example 20 or 24, further comprising: an amplifier circuit 306 which is coupled on the input side to an output of the smoothing element 402.Example 27 is a control device 300, 1400 aaccording to one of Examples 20 to 25, wherein the smoothing element 402 comprises a filter (e.g. a low-pass filter).Example 28 is a control device 300, 1400 aaccording to one of Examples 20 to 26, wherein the smoothing element 402 comprises a PT n- transmission element (e.g. PT 1- element and / or PT 2- element).Example 29 is a control device 300, 1400 aaccording to one of Examples 20 to 27, wherein the smoothing element 402 has a crossover.Example 30 is an electron beam gun, comprising: an electron beam source 112 qfor generating an electron beam 112 e; a deflection unit for deflecting the electron beam 112 eaccording to a deflection signal 302 acoupled to the deflection unit; and a control device 300, 1400 aaccording to one of Examples 20 to 28, which is configured, for example, to provide the deflection signal 302 ato the deflection unit.

Claims

Method (500) for providing an electron beam (112e), the method (500) comprising: • providing (501) data which represent a time-dependent desired deflection of the electron beam (112e); • determining (503) information which represents a rate of change of the desired deflection; • forming (505) a deflection signal (302a), wherein the deflection signal (302a) comprises a carrier signal (702) and a correction signal (704) superimposed on the carrier signal (702), • wherein the carrier signal (702) represents the desired deflection and the correction signal (704) represents the information; • smoothing (507) the deflection signal (302a); • deflecting (509) the electron beam (112e) on the basis of the smoothed deflection signal (302a) by supplying the smoothed deflection signal (302a) to a deflection unit (308).The method (500) of claim 1, wherein the data comprises a plurality of parameters representing a temporal sequence of the desired deflection, the information representing a difference between two parameters of the plurality of parameters.The method (500) of claim 1 or 2, further comprising: forming corrected data based on the data and the information, wherein forming the deflection signal (302a) is based on the corrected data.Method (500) according to one of Claims 1 to 3, wherein the correction signal (704) is time-invariant in a period in which the setpoint deflection and / or its rate of change is time-invariant.The method (500) of any of claims 1 to 4, wherein a signal strength of the correction signal (704) represents the rate of change of the desired deflection.Method (500) for providing an electron beam (112e), the method (500) comprising: • providing (501) data representing a time-dependent desired deflection of the electron beam (112e); • forming (505) a deflection signal (302a) on the basis of the data; • smoothing (507) the deflection signal (302a) according to a smoothing characteristic; • deflecting (509) the electron beam (112e) on the basis of the smoothed deflection signal (302a) by supplying the smoothed deflection signal (302a) to a deflection unit (308); • changing (511) the smoothing characteristic if the data and / or the desired deflection meet a criterion.The method (500) of claim 6, changing the smoothing characteristic if at least one of the following characteristics of the deflection signal (302a) satisfies the criterion: • a rate of change of the deflection signal (302a); • a peak-to-valley value of the deflection signal (302a); and / or • a signal strength of the deflection signal (302a).The method (500) of claim 6 or 7, wherein the data comprises a plurality of parameters representing a temporal sequence of the target deflection, wherein the data for a parameter of the plurality of parameters meets the criterion if the data further comprises a jump indicator associated with the parameter.Method (500) according to one of Claims 6 to 8, wherein the data have an indication which defines when and / or for which duration the criterion is fulfilled; wherein the smoothing characteristic is changed in accordance with the indication.The method (500) of any of claims 6 to 9, wherein the data comprises an instruction to change the smoothing characteristic, wherein the changing of the smoothing characteristic is performed according to the instruction.The method (500) of any of claims 6 to 10, wherein the data defines a deflection sequence, wherein the criterion is fulfilled at the beginning and / or at the end of the deflection sequence; wherein the deflection of the electron beam (112e) is performed multiple times according to the deflection sequence.Method (500) according to one of Claims 6 to 11, wherein the smoothing characteristic remains unchanged at least for a period in which the criterion is not fulfilled.The method (500) of any of claims 6 to 12, wherein changing the smoothing characteristic comprises switching between exactly two smoothing characteristics that are different from each other; and / or wherein changing the smoothing characteristic comprises reducing a characteristic magnitude of the smoothing characteristic.The method (500) of any of claims 6 to 13, wherein changing the smoothing characteristic comprises interrupting the smoothing.The method (500) of any of claims 1 to 14, wherein smoothing the deflection signal (302a) comprises: low pass filtering the deflection signal (302a).Control device (300, 1400a) for driving a deflection unit (308) for an electron beam (112e), the control device (300, 1400a) having: • a data unit (304) which is configured to provide data, wherein the data represent a time-dependent desired deflection of the electron beam (112e); • a smoothing element (402); • a switching circuit (1000, 1100) which is coupled between the data unit (304) and the smoothing element (402) and is configured to ascertain information which represents a rate of change of the desired deflection; and for forming a deflection signal (302a), wherein the deflection signal (302a) has a carrier signal (702) and a correction signal (704) superimposed on the carrier signal (702), and coupling the deflection signal (302a) to the smoothing element (402), • wherein the carrier signal (702) represents the desired deflection and the correction signal (704) represents the information.Control device (300, 1400a) for driving a deflection unit (308) for an electron beam (112e), comprising: • a data unit (304) which is configured to provide data, wherein the data represent a time-dependent desired deflection of the electron beam (112e); • a smoothing element (402) which implements a smoothing characteristic; • a switching circuit (1000, 1100) which is coupled between the data unit (304) and the smoothing element (402) and is configured to couple in the deflection signal (302a) to the smoothing element (402) on the basis of the data; and to change the smoothing characteristic if the data and / or the desired deflection meet a criterion.

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