Optoelectronic semiconductor device and method for manufacturing an optoelectronic semiconductor device

Abstract

Optoelectronic semiconductor device (1) with - a semiconductor body (10) comprising an active region (101) designed to generate electromagnetic radiation, - a wavelength conversion element (20) comprising a conversion area (202) and a sacrificial area (201), - a shaped body (30) in which the semiconductor body (10) and the wavelength conversion element (20) are at least partially embedded and which at least partially borders directly on the semiconductor body (10) and the wavelength conversion element (20), wherein - the conversion area (202) is set up to convert at least some of the electromagnetic radiation of a first wavelength range generated in the active area (101) into electromagnetic radiation of a second wavelength range, - the conversion area (202) is arranged between the sacrificial area (201) and the semiconductor body (10), - the victim area (201) is transparent to the electromagnetic radiation of the first wavelength range and the electromagnetic radiation of the second wavelength range, - the shaped body (30) and the sacrificial area (201) show traces of a wear process, - the shaped body (30) is designed as a reflector for the electromagnetic radiation of the first wavelength range and for the electromagnetic radiation of the second wavelength range, - the shaped body (30) has a concave curvature when viewed from a point outside the optoelectronic semiconductor device (1), and - the shaped body (30) and the sacrificial area (201) are flush with each other in the direction of a normal vector to a principal extension plane of the semiconductor body (10).

Description

[0001] An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are described. The optoelectronic semiconductor device is, in particular, a radiation-emitting optoelectronic semiconductor device that emits electromagnetic radiation, for example, light, during operation.

[0002] One problem to be solved is to specify an optoelectronic semiconductor device that exhibits improved optical contrast between an emission surface and a region surrounding the emission surface.

[0003] Another task to be solved is to specify a method for manufacturing an optoelectronic semiconductor device that enables simplified production.

[0004] Optoelectronic semiconductor devices and methods for manufacturing an optoelectronic semiconductor device are known from documents WO 2015 / 104 623 A1 and WO 2015 / 071 109 A1.

[0005] The optoelectronic semiconductor device comprises a semiconductor body with an active region configured for generating electromagnetic radiation. The active region preferably comprises a pn junction, a double heterostructure, a single quantum well (SQW), or, particularly preferably, a multi quantum well (MQW) for generating electromagnetic radiation of a first wavelength range.

[0006] The optoelectronic semiconductor device comprises a wavelength conversion element with a conversion region and a sacrificial region. The conversion region is configured to convert at least a portion of the electromagnetic radiation of the first wavelength range generated in the active region into electromagnetic radiation of a second wavelength range.

[0007] The conversion region can be formed with a conversion material, for example, an organic or inorganic phosphor, in particular yttrium aluminum garnet (YAG). The conversion region can also be homogeneous, for example, in the form of a platelet made of the aforementioned conversion material. Particularly preferably, the conversion region comprises a ceramic conversion material. Furthermore, the conversion region can be formed with a matrix material in which particles of the conversion material are embedded. The particles of the conversion material can also be configured as quantum dots. A quantum dot is a structure in which charge carriers are restricted in their mobility in all three spatial directions such that their energy can only assume discrete values. Quantum dots absorb electromagnetic radiation and re-emit it in a desired spectral range.

[0008] The sacrificial region is transparent to electromagnetic radiation of the first wavelength range and the second wavelength range, forming an emission surface of the optoelectronic semiconductor device. In particular, such a sacrificial region can be translucent or transparent. A large portion of the electromagnetic radiation generated during operation in the optoelectronic semiconductor device exits the device through this emission surface.

[0009] The optoelectronic semiconductor device comprises a shaped body in which the semiconductor body and the wavelength conversion element are at least partially embedded, and which at least partially borders directly on the semiconductor body and the wavelength conversion element.

[0010] The shaped body preferably completely covers the side surfaces of the semiconductor body and the side surfaces of the wavelength conversion element. The side surfaces of the semiconductor body and the wavelength conversion element extend transversely to the principal plane of extension of the semiconductor body and the wavelength conversion element. This means that the semiconductor body and the wavelength conversion element are completely surrounded by the shaped body at their edges. The shaped body is designed as a reflector for the electromagnetic radiation of the first wavelength range and for the electromagnetic radiation of the second wavelength range.

[0011] The sacrificial area and the shaped part each exhibit traces of a material removal process on their side facing away from the semiconductor device. Such a material removal process can be used to thin the optoelectronic semiconductor component to a predetermined thickness. The traces of the material removal process on the shaped part can originate from the same material removal process as the traces of the material removal process on the sacrificial area.

[0012] The shaped body does not project beyond the sacrificial region in any direction perpendicular to the principal extension direction of the semiconductor body. In other words, the shaped body and the sacrificial region are flush with each other in the direction of a normal vector to the principal extension plane of the semiconductor body.

[0013] The molded body is formed, in particular, with a matrix material in which, for example, titanium dioxide particles are embedded as a reflective filler material. The reflectivity of the molded body for electromagnetic radiation in the first and second wavelength ranges is, in particular, 80% and preferably 90%. Specifically, assuming the molded body is configured as a plane-parallel plate with a thickness of 50 µm that extends sufficiently far, and in particular infinitely far, relative to an illuminated surface, the molded body has a reflectivity of at least 70%, preferably at least 80%, and most preferably at least 90% for electromagnetic radiation in the first and second wavelength ranges. The concentration of, for example, titanium dioxide particles in the molded body is, in particular, at least 10 vol%, preferably at least 15 vol%, and most preferably at least 20 vol%.The shaped body reflects light generated during the operation of the optoelectronic semiconductor device back into the semiconductor body and the wavelength conversion element. This advantageously reduces or prevents the coupling of electromagnetic radiation through the shaped body into the laterally surrounding areas of the semiconductor body and the wavelength conversion element. The contrast between the emission surface of the optoelectronic semiconductor device and the surrounding housing is thus advantageously increased.

[0014] The optoelectronic semiconductor device comprises - a semiconductor body comprising an active region designed to generate electromagnetic radiation, - a wavelength conversion element comprising a conversion region and a sacrificial region, - a shaped body in which the semiconductor body and the wavelength conversion element are at least partially embedded and which at least partially borders directly on the semiconductor body and the wavelength conversion element, wherein - the conversion area is set up to convert at least part of the electromagnetic radiation of a first wavelength range generated in the active area into electromagnetic radiation of a second wavelength range, - the conversion area is located between the sacrificial area and the semiconductor body, - the victim area is transparent to electromagnetic radiation of the first wavelength range and electromagnetic radiation of the second wavelength range, - the mold body and the sacrificial area show traces of a erosion process, and - the shaped body is designed as a reflector for the electromagnetic radiation of the first wavelength range and for the electromagnetic radiation of the second wavelength range.

[0015] The following considerations, among others, underlie the design of the optoelectronic semiconductor device described here: A radiating halo can form around the emission surface of an optoelectronic semiconductor device. This halo can be caused by scattering effects and waveguiding within the optoelectronic semiconductor device and reduces the optical contrast between the emission surface and the surrounding area. To increase the contrast between the emission surface of the optoelectronic semiconductor device and the surrounding material, it is desirable to reduce or prevent the lateral coupling of electromagnetic radiation from the optoelectronic semiconductor device and thus restrict the coupling to the emission region. In other words, coupling of electromagnetic radiation outside the emission region is undesirable.

[0016] The optoelectronic semiconductor device described here utilizes, among other things, the concept of surrounding the emission area of ​​the optoelectronic semiconductor device with a highly reflective housing to reduce or prevent lateral coupling of electromagnetic radiation from the semiconductor body and the wavelength conversion element. Furthermore, an absorbing housing can be placed downstream of the reflective housing to further enhance the contrast.

[0017] According to at least one embodiment of the optoelectronic semiconductor device, the shaped body has a width of at least 10 µm, preferably at least 20 µm, and particularly preferably at least 50 µm in a direction parallel to the main extension direction of the semiconductor body. A sufficient width of the shaped body around the semiconductor body is advantageous to ensure sufficiently high reflectivity. The necessary width depends on the reflectivity of the material in the shaped body. Higher reflectivity advantageously allows for a smaller width of the shaped body.

[0018] According to at least one embodiment of the optoelectronic semiconductor device, the conversion region is formed with a polysiloxane or a glass in which particles of a conversion material are embedded. Polysiloxane and glass can advantageously exhibit high thermal and UV radiation resistance.

[0019] According to at least one embodiment of the optoelectronic semiconductor device, the sacrificial region is formed with a ceramic, a polysiloxane, or a glass. The sacrificial region is transparent to electromagnetic radiation of the first and second wavelength ranges. The sacrificial region is preferably designed to be readily removable by abrasive mechanical processes such as grinding or lapping. That is, the sacrificial region is sufficiently hard and exhibits only a low lubricating effect to be readily removable by abrasive mechanical processes such as grinding or lapping. In particular, the sacrificial region serves as a grinding stop layer. That is, the sacrificial region has a significantly greater hardness than the surrounding material and can thus act as a stop layer in an abrasive removal process.To avoid possible bending due to stresses and different coefficients of thermal expansion in the wavelength conversion element, it is particularly advantageous to make the sacrificial area and the conversion area from the same materials.

[0020] According to at least one embodiment of the optoelectronic semiconductor device, the sacrificial region is formed with a transparent ceramic, glass, or polysiloxane in which glass particles are embedded. Ceramic, polysiloxane, and glass are advantageously suited for an abrasive removal process and exhibit good transmittance for electromagnetic radiation in the visible wavelength range. The embedding of transparent glass particles allows the coefficient of thermal expansion of the polysiloxane to be influenced. This advantageously reduces or eliminates stresses in the wavelength conversion element.

[0021] According to at least one embodiment of the optoelectronic semiconductor device, the wavelength conversion element has a transparent compensation area on the side opposite the sacrificial area, wherein the compensation area is preferably formed with the same material or materials as the sacrificial area. In particular, the compensation area has the same coefficient of thermal expansion and the same thickness as the sacrificial area. Thus, any bending of the wavelength conversion element prior to its mounting on a semiconductor body, caused by the different coefficients of thermal expansion of the sacrificial area and the conversion area, is reduced or compensated for.

[0022] According to at least one embodiment of the optoelectronic semiconductor device, the shaped body has a concave, meniscus-like region. A concave, meniscus-like design is understood to mean a concave curvature of the shaped body as viewed from a point outside the optoelectronic semiconductor device. The shaped body extends from the upper edge of the sacrificial region, facing away from the semiconductor body, to the lower edge of the semiconductor body. The meniscus-like design of the shaped body corresponds to a concave meniscus on the semiconductor body, the tip of which, facing the upper edge of the sacrificial region, is truncated. The semiconductor body and the wavelength conversion element are preferably completely covered by the shaped body on their side surfaces.

[0023] According to at least one embodiment of the optoelectronic semiconductor device, the component body is surrounded by a housing body in a direction parallel to the main extension direction of the semiconductor body. The housing body can be formed, for example, with an epoxy or a polysiloxane, particularly silicone. The housing body can be used, in particular, for mechanical stabilization of the optoelectronic semiconductor device and / or for improved optical separation of the housing body from an emission region.

[0024] According to at least one embodiment of the optoelectronic semiconductor device, the housing material has an absorption coefficient of at least 70% for electromagnetic radiation of the first and / or second wavelength range. Preferably, the housing material has an absorption coefficient of at least 90% for electromagnetic radiation of the first and / or second wavelength range. Due to the absorbing effect of the housing, an improvement in the contrast between the emission surface and the housing is achieved. Any small portions of electromagnetic radiation that may not yet be completely reflected by the housing can thus be absorbed before they can exit the optoelectronic semiconductor device.The requirements for the stability of the housing body with respect to the electromagnetic radiation generated by the semiconductor body or converted by the wavelength conversion element are advantageously reduced, since the proportion of radiation reaching the housing body is reduced by means of the reflective shaped body.

[0025] Furthermore, a method for manufacturing an optoelectronic semiconductor device is described. In particular, the semiconductor device described herein can be manufactured using this method. That is to say, all features described for the semiconductor device are also disclosed for the method, and vice versa.

[0026] The process involves providing a semiconductor body with an active area set up to generate electromagnetic radiation.

[0027] The semiconductor body is positioned on the top side of a substrate that extends beyond the semiconductor body in its main direction of extension. The substrate is, for example, made of a semiconductor material. The substrate can provide mechanical support and impart mechanical stability to the optoelectronic semiconductor device.

[0028] A wavelength conversion element, comprising a conversion region and a sacrificial region, is positioned on the side of the semiconductor body facing away from the substrate, such that the sacrificial region faces away from the semiconductor body. The wavelength conversion element is designed to convert electromagnetic radiation. It is attached to the semiconductor body, for example, by bonding, soldering, or adhesive bonding.

[0029] A shaped body is applied to the top surface of the substrate such that the semiconductor body and the wavelength conversion element are at least partially embedded in the shaped body, with the shaped body projecting vertically beyond the sacrificial area. The shaped body can be applied, in particular, by compression molding. The vertical direction corresponds to the direction of a normal vector of the principal plane of extension of the semiconductor body. The shaped body preferably projects beyond the sacrificial area by a maximum of 100 µm, and more preferably by a maximum of 50 µm. Such a shaped body projecting beyond the sacrificial area advantageously allows for sufficient tolerance in a subsequent ablation process in which the shaped body and the sacrificial area are at least partially ablated.Furthermore, the application of the molded part using, for example, injection molding or compression molding is advantageously facilitated if the molded part extends beyond the sacrificial area, thus creating a gap between the sacrificial area and, for example, a compression mold. This gap allows the molded part material to be distributed effectively within the mold, and damage to the optoelectronic semiconductor component from a potential collision with the compression mold can be advantageously avoided.

[0030] The removal of at least a portion of the mold body and the sacrificial area is carried out in a vertical direction, and the sacrificial area is exposed using a mechanical and / or chemical removal process. A thicker mold body advantageously allows for easier application due to larger permissible tolerances, but requires a longer machining time for material removal due to the increased volume of material to be removed.

[0031] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor device, the molded body is formed with a polysiloxane, in particular silicone, into which filler particles are preferably embedded. Polysiloxanes advantageously exhibit high temperature and UV stability. The coefficient of thermal expansion of the polysiloxane can be modified by introducing filler particles. Titanium dioxide particles can be used as filler particles, which advantageously result in high optical reflectivity of the molded body.

[0032] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor device, the molded part is applied by compression molding. A polysiloxane, in particular silicone, is suitable for the compression molding process because it has a low viscosity and therefore very good flow properties.

[0033] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor device, the shaped component is applied using a dispensing process. In a dispensing process, a specific quantity of material can be applied precisely to a designated area using a needle. Alternatively, a jetting process can be used, in which a material is ejected from a nozzle at high pressure and blown onto a surface. The addition of solvents advantageously allows the use of very high titanium dioxide filler concentrations, as this reduces the viscosity of the material.

[0034] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor device, the molded body is arranged using a spray coating process. With a spray coating process, the use of harder polysiloxanes, particularly silicones with high titanium dioxide filler content, is possible. The filler content describes the proportion of a filler material in a matrix material. A high titanium dioxide filler content advantageously produces high optical reflectivity of the molded body.

[0035] Thus, even with a relatively thin molded part, sufficiently high reflectivity can be achieved. A high filler content of titanium dioxide is generally associated with a disadvantageously high viscosity, which is due to the small size of the titanium dioxide particles. High viscosity makes the material difficult to process. The addition of solvents advantageously allows the use of very high titanium dioxide filler contents, as this reduces the material's viscosity. When using a spray application process, the addition of solvents is particularly easy.

[0036] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor device, the component is arranged in several layers. Each layer can, for example, exhibit cracks and fissures caused by shrinkage during the curing of the individual layers. The occurrence of cracks and fissures can also be artificially increased, for example, by cooling the layers during curing. The cracks and fissures in the layer below are filled by the layer above. The unfilled cracks and fissures in the uppermost and final layer are eliminated by the ablation process, so that the uppermost layer is subsequently flat and no longer exhibits any cracks or fissures.

[0037] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor device, the molded body has a concave, meniscus-like region and furthermore completely surrounds the semiconductor body and the wavelength conversion element laterally. In other words, the side surfaces of the semiconductor body and the wavelength conversion element are completely covered by the molded body. The concave, meniscus-like region of the molded body extends from the upper edge of the sacrificial region facing away from the semiconductor body to the substrate. The molded body, in particular, has the shape of a concave meniscus, the tip of which facing away from the substrate is truncated.

[0038] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor device, the sacrificial area is exposed such that a ridge of at least 10 µm, preferably at least 100 µm, is formed on the edge of the sacrificial area facing away from the semiconductor body. The width of the ridge must be sufficient to ensure the desired high reflectivity of the component. The thickness of this ridge can be varied by the titanium dioxide fill level of the component. A high fill level results in high reflectivity and thus allows for a thinner ridge. Due to the meniscus-like shape of the component, increased material removal from the sacrificial area produces a wider ridge, and vice versa.In other words, the more of the tip of the meniscus-shaped body facing away from the substrate is ground away, the wider the remaining rib of the body becomes in a direction perpendicular to the direction of removal.

[0039] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor device, the component body is formed from a housing body by means of an injection molding or compression molding process in a direction parallel to the main extension direction of the semiconductor body. The housing body can be made of an absorbing material. Advantageously, the housing body can also be made of a UV-unstable material. The greater design freedom of the housing body allows, for example, a better match between the coefficient of thermal expansion of the housing body and the coefficient of thermal expansion of the semiconductor body and, in particular, the substrate.

[0040] Further advantages and beneficial designs and developments of the optoelectronic semiconductor device result from the following exemplary embodiments, in connection with the embodiments shown in the figures.

[0041] They show: Fig. Figures 1A to 1C are schematic cross-sections through an optoelectronic semiconductor device described herein, according to a first embodiment, at various stages of its fabrication. The fabrication is carried out according to an embodiment of a method described herein. Fig. 2 a schematic cross-section through an optoelectronic semiconductor device described herein according to a second embodiment, Fig. 3 a schematic cross-section through an optoelectronic device described here Semiconductor device according to a third embodiment, Fig. 4 a schematic cross-section through a wavelength conversion element described herein according to a first embodiment, Fig. 5A to 5C schematic cross-sections through an optoelectronic semiconductor device described herein according to a fourth embodiment in various stages of its manufacture, Fig. 6 a schematic cross-section through an optoelectronic semiconductor device described herein according to a fifth embodiment, and Fig. 7 A schematic top view of an optoelectronic semiconductor device described herein according to the fifth embodiment.

[0042] Identical, similar, or similarly effective elements in the figures are marked with the same reference symbols. The figures and the relative sizes of the elements depicted within them are not to be considered to scale. Rather, individual elements may be exaggerated for clarity and / or to improve representation. Fig. Figure 1A shows a schematic cross-section through an optoelectronic semiconductor device 1 described herein according to the first embodiment in a first stage of a method for its fabrication. The depicted optoelectronic semiconductor device 1 comprises a semiconductor body 10 having an active region 101. The active region 101 includes a pn junction and is configured to emit electromagnetic radiation of a first wavelength range. The thickness and position of the active region 101 in the schematic Fig. Figure 1A is for illustrative purposes only and may differ from the thickness and position in a real component. The semiconductor body 10 is arranged on an electrical contact surface 60 on a substrate 70. The electrical contact surface 60 comprises, for example, a metal or a metal alloy and serves for the electrical connection of the semiconductor body 10. A bond wire 50 and another electrical contact surface 60 are also provided for electrical contacting the semiconductor body 10.

[0043] Furthermore, the optoelectronic semiconductor device 1 comprises a wavelength conversion element 20, which is formed with a conversion region 202 and a sacrificial region 201. The wavelength conversion element 20 is arranged on the side of the semiconductor body 10 facing away from the substrate 70, such that the conversion region 202 is located between the sacrificial region 201 and the semiconductor body 10.

[0044] The conversion region 202 is formed with a conversion material, for example, an organic or inorganic phosphor, in particular yttrium aluminum garnet (YAG). The conversion region 202 can further be homogeneous, for example, in the form of a plate made of the aforementioned conversion material. The conversion region 202 particularly preferably comprises a ceramic conversion material. Furthermore, the conversion region 202 can be formed with a matrix material in which particles of the conversion material are embedded. The particles of the conversion material can also be configured as quantum dots. The conversion region 202 is designed for the conversion of electromagnetic radiation of the first wavelength range emitted during operation of the optoelectronic semiconductor device 1 in the active region 101.The conversion area 202 converts at least a portion of the electromagnetic radiation of the first wavelength range to electromagnetic radiation of a second wavelength range.

[0045] The sacrificial area 201 is formed in particular with a polysiloxane, a transparent ceramic or glass. The sacrificial area 201 is permeable to electromagnetic radiation of the first wavelength range and the second wavelength range, in particular being translucent or transparent.

[0046] Fig. Figure 1B shows a schematic cross-section through an optoelectronic semiconductor device 1 described herein according to the first embodiment in a further stage of a process for its manufacture. Fig. 1B essentially corresponds to the one in Fig. In the embodiment shown in Figure 1A, a molded body 30 is arranged on the substrate 70. This molded body completely surrounds the semiconductor body 10, the wavelength conversion element 20, the electrical contact surfaces 60, and the bonding wire 50. The molded body 30 is formed with a polysiloxane, in particular a silicone, an epoxy, or a polymer, and is applied to the substrate 70 by a compression molding process. The molded body 30 projects beyond the sacrificial area 201 in a direction parallel to a normal vector of the principal plane of extension of the sacrificial area 201 by a projection D1 of at least 100 µm. This projection D1 provides the compression mold with sufficient tolerance to prevent a collision with the optoelectronic semiconductor device 1. The molded body 30 is, in particular, filled with titanium dioxide particles.The concentration of titanium dioxide particles in the molded body 30 is at least 10 vol%, preferably at least 15 vol%, and particularly preferably at least 20 vol%. Titanium dioxide exhibits a preferably high reflectivity for electromagnetic radiation in the visible wavelength range and thus results in a high reflectivity of the molded body 30.

[0047] Fig. Figure 1C shows a schematic cross-section through an optoelectronic semiconductor device 1 described herein according to the first embodiment in a further stage of a process for its manufacture. Fig. 1C essentially corresponds to the one in Fig. In the embodiment shown in Figure 1B, the shaped body 30 and the sacrificial area 201 are abraded by a grinding and / or polishing process such that the sacrificial area 201 of the wavelength conversion element 20 is at least partially exposed. The surface of the shaped body 30 facing away from the substrate 70 and the surface of the sacrificial area 201 facing away from the conversion area 202 lie in a common plane. The sacrificial area 201 and the shaped body 30 thus exhibit traces of an abrading process. The electromagnetic radiation emitted in the semiconductor body 10 during the operation of the optoelectronic semiconductor device 1 and converted in the wavelength conversion element 20 can now exit the optoelectronic semiconductor device 1 unhindered through the optically transparent sacrificial area 201. The reflective shaped body 30 completely covers the side surfaces of the semiconductor body 10 and the wavelength conversion element 20.The reflective shaped body 30 thus also limits electromagnetic radiation emanating laterally from the semiconductor body 10 and the wavelength conversion element 20, reflecting at least some of it back into the semiconductor body 10 and the wavelength conversion element 20. In a top view of the optoelectronic semiconductor device 1, this results in a advantageously high contrast between the emission region E formed by the sacrificial region 201 and the surrounding shaped body 30. The emitted electromagnetic radiation is thus limited in later directions to the area of ​​the sacrificial region 201.

[0048] Fig. Figure 2 shows a schematic cross-section through an optoelectronic semiconductor device 1 described herein, according to the second embodiment. The second embodiment corresponds essentially to the first embodiment except for the structure of the molded body 30. The molded body 30 is applied to the substrate 70 in a multi-stage process. This process is, in particular, a spraying process, a jetting process, or a metering process. The individual layers applied each exhibit cracks and fissures caused by shrinkage during the curing of the layers. The cracks and fissures are filled by the layer applied above them. Since the cracks are always filled by the subsequent layer, only the last layer applied still exhibits cracks and fissures. Below the last layer, a solid body without cracks or fissures is formed.These cracks and fissures are tolerable, however, because the upper part of the last layer is removed in a subsequent ablation process. This results in a crack- and fissure-free surface of the molded body 30, which facilitates the subsequent alignment of optical components, such as a lens.

[0049] Fig. Figure 3 shows a schematic cross-section through an optoelectronic semiconductor device 1 described herein according to the third embodiment. The third embodiment corresponds essentially to the second embodiment and differs in the structure of the molded body 30. The molded body 30 is applied to the substrate 70 in a multi-stage process. A spraying process or a metering process with the addition of solvents is used to apply the molded body 30. Using such processes, the molded body 30 can be produced from a polysiloxane with a very high titanium dioxide content. Optionally, the addition of transparent glass particles is also possible to match the coefficient of thermal expansion of the molded body 30 to the coefficient of thermal expansion of the semiconductor body 10 and / or the substrate 70.The inherently disadvantageous high viscosity, caused by a very high titanium dioxide filler content, can be compensated for in these processes by the addition of solvents. The deposition of the individual layers is partially independent of direction. The overlapping layers replicate the shape of the underlying semiconductor body 10 and result in an uneven surface. This unevenness is, however, tolerable, since the shaped body 30 is planarized in a subsequent ablation process.

[0050] Fig. Figure 4 shows a schematic cross-section through a wavelength conversion element 20 described herein according to the first embodiment. The wavelength conversion element 20 shown here comprises a sacrificial region 201, a conversion region 202, and a compensation region 203. The conversion region 202 lies between the compensation region 203 and the sacrificial region 201. The compensation region 203 preferably comprises a material with a very similar or identical coefficient of thermal expansion to that of the sacrificial region 201. The sacrificial region 201 is transparent to the electromagnetic radiation of the first wavelength range and the electromagnetic radiation of the second wavelength range. The thickness of the sacrificial region 201 and the compensation region 203 are preferably equal. The thickness is defined as the maximum extent in a direction parallel to a normal vector of the principal plane of extension of a region.This design advantageously reduces or prevents bending due to differing coefficients of thermal expansion between the sacrificial area 201 and the conversion area 202. This allows the conversion element 20 to be manufactured separately before being applied to the semiconductor device 10.

[0051] Fig. Figure 5A shows a schematic cross-section through an optoelectronic semiconductor device 1 described herein, according to the fourth embodiment, in a first stage of a method for its fabrication. The illustrated embodiment corresponds essentially to that described in Figure 5A. Fig. In the embodiment shown in Figure 1A, the shaped body 30 is additionally attached to the side surfaces of the wavelength conversion element 20 and the semiconductor body 10 by means of a concave, meniscus-like shape. A concave, meniscus-like shape refers to a concave curvature of a meniscus onto an existing surface, as seen from a point outside the optoelectronic semiconductor device 1. The shaped body 30 extends from the edge of the sacrificial area 201 facing away from the substrate 70 to the substrate 70. The side surfaces of the semiconductor body 10 and the wavelength conversion element 20 are completely covered by the shaped body 30. The shaped body 30 is formed with a polysiloxane, in particular a silicone, in which titanium dioxide is incorporated as a filler material.The molded body 30, with a thickness of 50 µm, already exhibits a reflectivity of at least 90% for the electromagnetic radiation generated during operation in the optoelectronic semiconductor device 1. The molded body 30 is applied using a dispensing or jetting process. The side surfaces of the semiconductor body 10 and the wavelength conversion element 20 are completely covered by the molded body 30.

[0052] Fig. Figure 5B shows a schematic cross-section through an optoelectronic semiconductor device 1 described herein according to the fourth embodiment in a further stage of a process for its fabrication. The illustrated embodiment corresponds essentially to that in Fig. The embodiment shown in Figure 5A is illustrated in the following example. A housing body 40 is arranged around the molded body 30. The housing body 40 completely surrounds the molded body 30. The housing body 40 is applied using a film-supported molding process, an injection molding process, a compression molding process, a spraying process, a jetting process, or a metering process. The housing body 40 provides, for example, mechanical stabilization of the optoelectronic semiconductor device 1 and / or an improvement in the contrast between the emission area E and the housing body 40. The housing body 40 is protected by the molded body 30 from the electromagnetic radiation generated in the optoelectronic semiconductor device 1 during operation.

[0053] Fig. Figure 5C shows a schematic cross-section through an optoelectronic semiconductor device 1 described herein, according to the fourth embodiment, in a further stage of a process for its fabrication. The illustrated embodiment corresponds essentially to that described in Figure 5C. Fig. 5B illustrated embodiment. The shaped body 30, the housing body 40 and the sacrificial area 201 are removed by a mechanical ablation process such that the sacrificial area 201 is exposed, and the upper part of the shaped body 30 forms a web with a width of at least 10 µm, preferably at least 50 µm. The web width D2 of the meniscus-shaped molded body 30 results from the maximum extent of the molded body 30 in a direction parallel to the main extension direction of the substrate 70 on the side of the molded body 30 facing away from the substrate 70. Since the width of the molded body 30 increases in a direction from the sacrificial area 201 towards the substrate 70, the desired web width D2 of the molded body 30 on the side facing away from the substrate 70 can be adjusted by the material removal volume of the molded body 30, the housing body 40 and the sacrificial area 201.A larger material removal volume necessitates a greater material removal depth, resulting in a larger web width D2 of the molded body 30. Depending on the fill level of the molded body 30 with titanium dioxide, a smaller web width D2 may also be sufficient to ensure adequate reflectivity of the molded body 30 for the electromagnetic radiation generated in the optoelectronic semiconductor device 1 during operation.

[0054] Fig. Figure 6 shows a schematic cross-section through an optoelectronic semiconductor device 1 described herein, according to the fifth embodiment. The illustrated embodiment essentially corresponds to the one in Fig. The embodiment shown in Figure 5C is described in the following example. The shaped body 30 is completely enclosed by a housing body 40, which contains an absorbing filler. The housing body 40 can, for example, be made of a dark plastic, such as an epoxy material, in which absorbing filler materials are embedded. Since the shaped body 30 already has a reflective effect, high reflectivity for the housing body 40 is advantageous, but not essential. Furthermore, the proportion of electromagnetic radiation generated in the semiconductor body 10 or the wavelength conversion element 20 during the operation of the optoelectronic semiconductor device 1 that can penetrate the housing body 40 is advantageously low or completely negligible. This advantageously increases the design freedom for the material of the housing body 40, as non-radiation-resistant, and in particular UV-resistant, materials can also be used for it.This also allows the use of materials with a coefficient of thermal expansion better suited to the substrate 70, the semiconductor body 10, and the wavelength conversion element 20, which were previously unusable due to their limiting radiation or UV stability. Fig.Figure 7 shows a schematic top view of an optoelectronic semiconductor device 1 described herein, according to the fifth embodiment. The wavelength conversion element 20 forms an emission region E through which at least the predominant portion of the electromagnetic radiation generated in the optoelectronic semiconductor device 1 during operation exits the optoelectronic semiconductor device 1. The shaped body 30 is arranged laterally around the wavelength conversion element 20. The shaped body 30 completely surrounds the wavelength conversion element 20. The shaped body 30 has a web width D2 of 100 µm. The shaped body 30 is completely surrounded laterally by the housing body 40.Electromagnetic radiation emitted laterally from the semiconductor body 10 and / or the wavelength conversion element 20 is predominantly reflected within the shaped body 30, while the non-reflected portion of the electromagnetic radiation can be absorbed by the material of the housing body 40. This results in a advantageously high contrast between the emission surface E and the shaped body 30 as well as the housing body 40. Reference symbol list 1 optoelectronic semiconductor device 10 semiconductor bodies 101 active area 20 wavelength conversion element 201 Victim area 202 Conversion area 203 Compensation area 30 molded bodies 40 Housing bodies 50 bond wire 60 electrical connection surfaces 70 substrate D1 overhang D2 bridge width E emission range

Claims

[1] Optoelectronic semiconductor device (1) with - a semiconductor body (10) comprising an active region (101) designed to generate electromagnetic radiation, - a wavelength conversion element (20) comprising a conversion area (202) and a sacrificial area (201), - a shaped body (30) in which the semiconductor body (10) and the wavelength conversion element (20) are at least partially embedded and which at least partially borders directly on the semiconductor body (10) and the wavelength conversion element (20), wherein - the conversion area (202) is set up to convert at least some of the electromagnetic radiation of a first wavelength range generated in the active area (101) into electromagnetic radiation of a second wavelength range, - the conversion area (202) is arranged between the sacrificial area (201) and the semiconductor body (10), - the victim area (201) is transparent to the electromagnetic radiation of the first wavelength range and the electromagnetic radiation of the second wavelength range, - the shaped body (30) and the sacrificial area (201) show traces of a wear process, - the shaped body (30) is designed as a reflector for the electromagnetic radiation of the first wavelength range and for the electromagnetic radiation of the second wavelength range, - the shaped body (30) has a concave curvature when viewed from a point outside the optoelectronic semiconductor device (1), and - the shaped body (30) and the sacrificial area (201) are flush with each other in the direction of a normal vector to a principal extension plane of the semiconductor body (10). [2] Optoelectronic semiconductor device (1) according to the preceding claim, wherein the shaped body (30) has a width of at least 10 µm, preferably at least 50 µm, in a direction parallel to the main extension direction of the semiconductor body (10). [3] Optoelectronic semiconductor device (1) according to one of the preceding claims, wherein the conversion area (202) is formed with a ceramic, a polysiloxane or a glass in which particles of a conversion material are embedded. [4] Optoelectronic semiconductor device (1) according to one of the preceding claims, wherein the sacrificial area (201) is formed with a transparent ceramic, a polysiloxane or with a glass. [5] Optoelectronic semiconductor device (1) according to the preceding claim, wherein the sacrificial region (201) is formed with a polysiloxane in which particles of a preferably transparent glass are embedded. [6] Optoelectronic semiconductor device (1) according to one of the preceding claims, wherein the wavelength conversion element (20) has a transparent compensation area (203) on the side of the conversion area (202) opposite the sacrificial area (201), wherein the compensation area (203) is preferably formed with the same material as the sacrificial area (201). [7] Optoelectronic semiconductor device (1) according to one of the preceding claims, wherein the shaped body (30) is surrounded by a housing body (40) in a direction parallel to the main extension direction of the semiconductor body (10). [8] Optoelectronic semiconductor device (1) according to the preceding claim, wherein the material of the housing body (40) has an absorption coefficient of at least 70% for electromagnetic radiation of the first and / or second wavelength range. [9] Method for manufacturing an optoelectronic semiconductor device (1) comprising the following steps: - Providing a semiconductor body (10) comprising an active region (101) configured to generate electromagnetic radiation, - Arranging the semiconductor body (10) on the top side of a substrate (70) which extends beyond the semiconductor body (10) in its main extension direction, - Arranging a wavelength conversion element (20) with a conversion region (202) and a sacrificial region (201) on the side of the semiconductor body (10) facing away from the substrate (70) such that the sacrificial region (201) faces away from the semiconductor body (10), - Applying a shaped body (30) to the top of the substrate (70) such that the semiconductor body (10) and the wavelength conversion element (20) are at least partially embedded in the shaped body (30) and the shaped body (30) extends vertically beyond the sacrificial area (201), - Removing at least a part of the molded body (30) and the sacrificial area (201) in a vertical direction and exposing the sacrificial area (201), wherein - the shaped body (30) has a concave curvature when viewed from a point outside the optoelectronic semiconductor device (1), and - the shaped body (30) and the sacrificial area (201) are flush with each other in the direction of a normal vector to the principal extension plane of the semiconductor body (10). [10] Method for producing an optoelectronic semiconductor device (1) according to the preceding claim, wherein the molded body (30) is formed with a polysiloxane, in particular a silicone, in which filler particles are embedded. [11] Method for manufacturing an optoelectronic semiconductor device (1) according to one of the preceding claims, wherein the application of the shaped body (30) is carried out by means of compression molding. [12] Method for manufacturing an optoelectronic semiconductor device (1) according to one of the preceding claims, wherein the application of the shaped body (30) is carried out by means of a metering method. [13] Method for manufacturing an optoelectronic semiconductor device (1) according to claim 9, wherein the application of the shaped body (30) is carried out by spraying. [14] Method for manufacturing an optoelectronic semiconductor device (1) according to claim 9, wherein the application of the shaped body (30) is carried out in several layers. [15] Method for manufacturing an optoelectronic semiconductor device (1) according to one of the preceding claims, wherein the sacrificial area (201) is exposed in such a way that a web of at least 10 µm, preferably at least 100 µm, width of the shaped body (30) is formed on the edge of the sacrificial area (201) facing away from the semiconductor body (10). [16] Method for manufacturing an optoelectronic semiconductor device (1) according to claim 9, wherein the forming body (30) is formed by a housing body (40) in a direction parallel to the main extension direction of the semiconductor body (10).

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