SEMICONDUCTOR DEVICE

Abstract

Semiconductor device (10), comprising: a substrate (14) comprising a conductor pattern (13) in which a concave joining space (13a1) is formed, and an insulating plate (11) on which the conductor pattern (13) is formed; and a contact component (27) comprising a body section (17a) in which a cylindrical hollow hole (17b) is formed, and a flange (17d) which is formed on at least one of open end sections (17b1, 17b2) on both sides of the body section (17a), and which extends outwards from one of the open end sections (17b1, 17b2) in a radial direction of the hollow hole (17b); wherein, when the flange (17d) is arranged at one of the open end sections (17b1, 17b2) of the contact component (27) in the joining space (13a1), an entire front surface of the flange (17d) is arranged at a lower level than a front surface of the conductor pattern (13) in a side view of the semiconductor device (10), and an inner wall of the hollow hole (17b) at one of the open end sections (17b1, 17b2) of the body section (17a) and an outer periphery of the flange (17d) are joined with the conductor pattern (13) in the joining space (13a1) by means of a joining element (19).

Description

BACKGROUND OF THE INVENTIONField of the invention

[0001] The embodiments discussed here relate to a semiconductor device. General state of the art

[0002] A semiconductor device comprises semiconductor elements such as insulated-gate bipolar transistors (IGBTs) or power metal-oxide-semiconductor field-effect transistors (power MOSFETs). Such a semiconductor device is used, for example, as a power converter.

[0003] The semiconductor device comprises a substrate having an insulating plate and conductive patterns formed on the front surface of the insulating plate. Semiconductor elements and external terminals are arranged on the conductive patterns. Signals applied to the external terminals are input to the semiconductor elements via the conductive patterns.

[0004] When attaching the external terminals to the circuit boards, cylindrical contact components are used. The contact components are joined to the circuit boards using solder, and the external terminals are pressed into the contact components. Thus, the external terminals are electrically connected to the circuit boards through the contact components.

[0005] See, for example, the international publication WO 2014 / 148 319 A1.

[0006] However, if the amount of solder (solder thickness) joining the substrate's circuit patterns and the contact components is small, the joining strength of the contact components to the circuit patterns is reduced. If the joining strength of the contact components to the circuit patterns is reduced, the reduced joining strength may cause a reduction in the reliability of the semiconductor device. If the amount of solder is large, the heat applied when joining the contact components to the circuit patterns causes the solder to creep up into the hollow holes of the contact components. If the solder creeps up into the hollow holes, the external terminals are not pressed into the contact component, possibly causing a reduction in the reliability of the semiconductor device. In addition, the solder overflows and wets an undesirable area on the substrate.This may cause the solder to spread around another component, potentially causing a reduction in the reliability of the semiconductor device.

[0007] DE 10 2014 107 241 A1 relates to establishing an electrical connection between a metallization layer and a contact pin. For this purpose, a contact sleeve is soldered to the metallization layer. To prevent uncontrolled sagging of the contact sleeve during soldering, the contact sleeve has a projection that engages a recess in the metallization layer. Reference is also made to DE 10 2009 032 973 A1, JP 2012 - 4 226 A, and JP 2014 - 146 845 A. SUMMARY OF THE INVENTION

[0008] The present invention was conceived in view of these problems. An object of the present invention is to provide a semiconductor device that prevents a reduction in the joining strength of the contact components by preserving the solder thickness while preventing the solder from creeping up into the hollow holes of the contact components.

[0009] According to one aspect of the embodiments, a semiconductor device is provided. The semiconductor device comprises: a substrate including a conductive pattern in which a concave joining space is formed, and an insulating plate on which the conductive pattern is formed; and a contact member including a body portion in which a cylindrical hollow hole is formed, and a flange formed on at least one of open end portions on both sides of the body portion and extending outward from the one of the open end portions in a radial direction of the hollow hole;wherein, when the flange is disposed at the one of the open end portions of the contact member in the joining space, an entire front surface of the flange is disposed at a lower level than a front surface of the conductive pattern in a side view of the semiconductor device, and an inner wall of the hollow hole at the one of the open end portions of the body portion and an outer periphery of the flange are joined to the conductive pattern in the joining space by means of a joining element; BRIEF DESCRIPTION OF THE DRAWINGS

[0010] They show: Fig. 1 is a side cross-sectional view of a semiconductor device of a first embodiment; Fig. 2A and Fig. 2B shows a contact component of the first embodiment; Fig. 3 is a side cross-sectional view of a joining portion of a contact member of the semiconductor device of the first embodiment; Fig. 4A and Fig. 4B are plan views of joining spaces formed in a conductive pattern of the semiconductor device of the first embodiment; Fig. 5A to 5D show a method of applying solder in the semiconductor device of the first embodiment; Fig. 6A and Fig. 6B shows another method of applying solder in the semiconductor device of the first embodiment; Fig. 7A and Fig. 7B shows a contact component of a second embodiment; Fig. 8 is a side cross-sectional view of a joining portion of a contact member of a semiconductor device of the second embodiment; Fig. 9 is a side cross-sectional view of a joining portion of a contact member of a semiconductor device of a third embodiment; Fig. 10 is a side cross-sectional view of a joining portion of a contact component of a semiconductor device of a fourth embodiment; and Fig. 11 is a side cross-sectional view of a joining portion of a contact member of a semiconductor device of a fifth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0011] Some embodiments are described below with reference to the accompanying drawings. First embodiment

[0012] A semiconductor device of a first embodiment will be described with reference to Fig. 1 described.

[0013] Fig. 1 is a side cross-sectional view of the semiconductor device of the first embodiment.

[0014] As in Fig. 1, a semiconductor device 10 comprises a substrate 14, semiconductor elements 15 and contact components 17 arranged on the front surface of the substrate 14, and external terminals 18 attached to the corresponding contact components 17. Although the plurality of semiconductor elements 15 are arranged on the substrate 14, Fig. 1 of one of the semiconductor elements 15. A heat-radiating plate 20 is arranged on the back surface of the substrate 14. The components, including the substrate 14, the semiconductor elements 15, and the external terminals 18, are housed by the heat-radiating plate 20 and a housing 21. However, the front ends of the external terminals 18 extend out of the housing 21. Here, the front surface refers to a surface on the side from which the front ends of the external terminals 18 extend out of the housing 21 in the semiconductor device 10. The back surface refers to a surface on the side on which the heat-radiating plate 20 is arranged in the semiconductor device 10.

[0015] Hereinafter, in the case where the conductive patterns 13a, 13b, 13c, 13d, 13e, and 13f described below are not distinguished from each other, they are represented as conductive patterns 13. Similarly, in the case where the bonding wires 16a, 16b, 16c, 16d, 16e, 16f, and 16g described below are not distinguished from each other, they are represented as bonding wires 16.

[0016] The substrate 14 includes an insulating plate 11, a metal plate 12 formed on the back surface of the insulating plate 11, and the conductive patterns 13 formed on the front surface of the insulating plate 11. The insulating plate 11 is made of ceramic having high thermal conductivity, such as alumina, aluminum nitride, or silicon nitride. The metal plate 12 is made of metal having high thermal conductivity, such as aluminum, iron, silver, copper, or an alloy containing at least one of these. The conductive patterns 13 are made of metal having high electrical conductivity, such as copper or a copper alloy. The substrate 14 having such a configuration is achieved using, for example, a direct copper bonding (DCB) substrate or an active soldering (AMB) substrate.The substrate 14 conducts the heat generated by the semiconductor elements 15 to the heat radiating plate 20 through the conductive patterns 13a, 13b, 13c, 13d, 13e and 13f, the insulating plate 11 and the metal plate 12.

[0017] Some of the conductive patterns 13a, 13d and 13f are provided with concave joining spaces 13a1, 13d1 and 13f1 in which the contact components 17 are arranged. Although the plurality of conductive patterns 13 is formed on the insulating plate 11, Fig. 1 the conductive patterns 13a, 13b, 13c, 13d, 13e and 13f of the plurality of conductive patterns 13.

[0018] A cross-sectional shape of the concave joining spaces 13a1, 13d1, and 13f1 of the conductive patterns 13a, 13d, and 13f includes a bottom portion and an inner wall portion. The bottom portion is formed perpendicular to a stacking direction of the substrate 14. The inner wall portion is shown extending from the outer periphery of the bottom portion to the front surface of the conductive patterns 13a, 13d, and 13f. The inner wall portion may be perpendicular to the bottom portion or may be blunt or acute relative to the bottom portion. Preferably, the shape of the concave joining spaces 13a1, 13d1, and 13f1 in a plan view is a circle or a polygon, such as a quadrilateral. For example, the concave joining spaces 13a1, 13d1, and 13f1 may be formed like a cylinder or a bowl. In addition, the concave joining spaces 13a1, 13d1 and 13f1 of the conductive patterns 13a, 13d and 13f may have a convex portion (protruding portion) formed on their bottom portions.The cross-sectional shape of the convex portion (protruding portion) may be perpendicular to the bottom portion of each of the concave joint spaces 13a1, 13d1, and 13f1, or may be obtuse or acute to the bottom portion. Preferably, the shape of the convex portion (protruding portion) in a plan view is a circle or a polygon, such as a quadrilateral. For example, the convex portion may be formed like a hemisphere, a cone, or a quadrangular pyramid. Furthermore, the concave joint spaces 13a1, 13d1, and 13f1, which have different shapes, may be variously combined with the convex portions (protruding portions) which have different shapes. For example, in the case where the shape of the inner wall portions of the concave joint spaces 13a1, 13d1 and 13f1 is a circle and the shape of the convex portions (protruding portions) is also a circle, an annular concave portion is formed.With the joining spaces 13a1, 13d1, and 13f1 formed in this way, sufficient joining strength is achieved between the conductive patterns 13a, 13d, and 13f and the cylindrical contact components 17. Some of the shapes of the joining spaces 13a1, 13d1, and 13f1 will be described later.

[0019] Examples of the semiconductor elements 15 include a switching device such as an IGBT or a power MOSFET. For example, each of these semiconductor elements 15 includes a drain electrode (or a collector electrode) formed on its back surface as the main electrode, and a gate electrode and a source electrode (or an emitter electrode) formed on its front surface as the main electrodes.

[0020] Examples of the semiconductor elements 15 also include a diode, such as a Schottky Barrier Diode (SBD) or a Freewheeling Diode (FWD), as needed. These semiconductor elements 15 each include a cathode electrode formed on their back surface as the main electrode and an anode electrode formed on their front surface as the main electrode. The back surfaces of the semiconductor elements 15 described above are joined to the predetermined conductive patterns 13 using solder (not shown).

[0021] The contact components 17 each have a cylindrical shape in which a hollow hole is formed. The hollow hole passes through a portion between the open end portions of each of the contact components 17. A portion of each of the contact components 17 on the side of an open end portion is joined to a corresponding one of the conductive patterns 13 using a joining element, and each of the external connection terminals 18 is press-fitted into a corresponding one of the contact components 17 from the other open end portion thereof. Each of the contact components 17 may include a body portion in which the hollow hole is formed and a flange formed at least on one of the open end portions of the body portion. The contact components 17 are joined to the conductive patterns 13 using solder. Although the contact components 17 are arranged on the plurality of conductive patterns 13 on the substrate 14, Fig. 1 shows some of the contact components 17 arranged on the conductive patterns 13a, 13d, and 13f. The contact components 17 are made of aluminum, iron, silver, copper, which have excellent conductivity, or an alloy containing at least one of these. To improve corrosion resistance, a metal layer made of, for example, nickel or gold may be formed on the surfaces of the contact components 17 by plating or the like. Examples of the metal other than nickel and gold include a nickel-phosphorus alloy and a nickel-boron alloy. In addition, a gold layer may be formed on a nickel-phosphorus alloy layer. The contact components 17 will be described in detail later.

[0022] The external terminals 18 are made of aluminum, iron, silver, copper, which exhibit excellent conductivity, or an alloy containing at least one of these. The external terminals 18 are rod-shaped and have a cross-section whose shape is, for example, square. The external terminals 18 are pressed into the hollow holes of the contact components 17 and are thus electrically connected to the conductor patterns 13 through the contact components 17.

[0023] On the substrate 14, the conductive patterns 13 are electrically connected to one another via bond wires 16. For example, the conductive patterns 13a and 13b are electrically connected to one another via bond wires 16a and 16b, and the conductive patterns 13b and 13c are electrically connected to one another via bond wires 16c and 16d. Also on the substrate 14, some of the conductive patterns 13 and the semiconductor element 15 are electrically connected to one another via bond wires 16. For example, the conductive pattern 13d and the semiconductor element 15 are electrically connected to one another via a bond wire 16e. The conductive pattern 13f and the semiconductor element 15 are also electrically connected to one another via bond wires 16f and 16g.Thus, in the semiconductor device 10, the bonding wires 16 connect the conductive patterns 13 to each other and connect some of the conductive patterns 13 and the semiconductor elements 15; the external connection terminals 18 are electrically connected to the conductive patterns 13; and thus, a predetermined circuit including the semiconductor element 15 is formed.

[0024] The heat radiating plate 20 is made of, for example, aluminum, iron, silver, copper, which have high thermal conductivity, or an alloy containing at least one of these. To improve corrosion resistance, a layer made of, for example, nickel can be formed on the surface of the heat radiating plate 20 by plating or the like. Examples of the layer material other than nickel include a nickel-phosphorus alloy and a nickel-boron alloy.

[0025] To improve heat radiation performance, a cooler (not shown) can be attached to the back surface of the heat radiation plate 20 using solder or silver solder. In this case, the cooler is made of aluminum, iron, silver, copper, which have high thermal conductivity, or an alloy containing at least one of these. Furthermore, fins, a heat sink consisting of a plurality of fins, or a water-cooled cooler can be used as the cooler. The heat radiation plate 20 can be integrally formed with such a cooler. In this case, the heat radiation plate 20 and the cooler are made of aluminum, iron, silver, copper, which have high thermal conductivity, or an alloy containing at least one of these.To improve corrosion resistance, a layer made of, for example, nickel and integral with the radiator may be formed on the surface of the heat-radiating plate 20 by metallization or the like. Examples of the material of the layer other than nickel include a nickel-phosphorus alloy and a nickel-boron alloy.

[0026] The housing 21 may be box-shaped and made of a thermoplastic resin. Examples of the thermoplastic resin include polyphenylene sulfide (PPS), polybutylene terephthalate (PBT) resin, polybutylene succinate (PBS) resin, polyamide (PA) resin, and acrylonitrile butadiene styrene (ABS) resin.

[0027] The interior of the housing 21 may be sealed with a sealing member (not shown). The sealing member is made, for example, of a thermosetting resin such as maleimide-modified epoxy resin, maleimide-modified phenolic resin, or maleimide resin. The sealing member may be in gel form. Such a sealing member is injected into the housing 21 through a predetermined inlet formed in the housing 21 and seals the substrate 14, the semiconductor element 15, the contact components 17, the bonding wires 16, and portions of the external terminals 18 arranged on the heat-radiating plate 20.

[0028] Next, the contact components 17 are assembled with reference to Fig. 2A and Fig. 2B.

[0029] Fig. 2A and Fig. 2B depict a contact component of a first embodiment which does not fall within the wording of the claims. Fig. 2A is a plan view of a contact component 17. Fig. Figure 2B is a cross-sectional view taken along an alternate long and short dashed line XX of Fig. 2A seen.

[0030] The contact member 17 has a cylindrical hollow hole 17b formed in the contact member 17, and includes one open end portion 17b1 and the other open end portion 17b2. A portion of the contact member 17 on the open end portion 17b2 side (or on the open end portion 17b1 side) is joined to the conductive pattern 13 using solder. The external connection terminal 18 is press-fitted into the open end portion 17b1 (or the open end portion 17b2) opposite the open end portion 17b2 (or the open end portion 17b1) joined to the conductive pattern 13.

[0031] In the contact member 17 having such a structure, the inner diameter of the hollow hole 17b at the open end portions 17b1 and 17b2 is preferably 0.20 mm or more and 2.00 mm or less, and more preferably 0.50 mm or more and 1.50 mm or less. The outer diameter of the contact member 17 at the open end portions 17b1 and 17b2 is preferably 1.00 mm or more and 2.50 mm or less, and more preferably 1.50 mm or more and 2.00 mm or less.

[0032] Next, a joining portion of the contact component 17 is bonded to the conductive pattern 13 of the substrate 14 with reference to Fig. 3 described.

[0033] Fig. 3 is a side cross-sectional view of a joining portion of a contact member of the semiconductor device of the first embodiment, which does not fall within the scope of the claims. Fig. 3 depicts a portion of the substrate 14 in which the conductive pattern 13a is formed. A joining space 13a1, described below, formed in the conductive pattern 13a is also formed in other conductive patterns 13. The substrate 14 includes the insulating plate 11, the metal plate 12 formed on the back surface of the insulating plate 11, and the conductive pattern 13a formed on the front surface of the insulating plate 11.

[0034] The conductive pattern 13a is formed such that the joining space 13a1, in which the contact component 17 is to be arranged, is concave. The joining space 13a1 is formed by etching a predetermined joining area of ​​the conductive pattern 13 defined for the contact component 17. The joining space 13a1 includes a bottom portion 13a3 perpendicular to the stacking direction of the substrate 14 and an inner wall portion 13a2 formed along the outer periphery of the bottom portion 13a3 and extending perpendicular to the bottom portion 13a3.

[0035] The thickness of the conductive pattern 13a is preferably 0.10 mm or more and 1.00 mm or less, and more preferably 0.20 mm or more and 0.50 mm or less. The height of the inner wall portion 13a2 is preferably 0.10 mm or more and 0.8 times or less the thickness of the conductive pattern 13a, and more preferably 0.12 mm or more and 0.5 times or less the thickness of the conductive pattern 13a. The width of the joining space 13a1 is preferably 1.05 times or more the outer diameter of the open end portion 17b2 of the contact member 17 and 1.50 times or less the outer diameter of the open end portion 17b2 of the contact member 17; and more preferably 1.1 times or more of the outer diameter of the open end portion 17b2 of the contact member 17 and 1.25 times or less of the outer diameter of the open end portion 17b2 of the contact member 17.When the contact member 17 is arranged in a central portion of the joining space 13a1 having the above-described diameter, a suitable joining distance D1 is achieved from the outer periphery of the open end portion 17b2 of the contact member 17 to the inner wall portion 13a2.

[0036] A solder 19 (joining element) is arranged in the joining space 13a1 of the conductor pattern 13. The solder 19 may be a lead-free tin-based solder. The portion of the contact component 17 on the side of the open end portion 17b2 is arranged in the joining space 13a1, in which the molten solder 19 is arranged, and then the contact component 17 is Fig. 3 pressed down.

[0037] The contact component 17 is arranged in the concave joining space 13a1 formed in the conductive pattern 13a. As a result, the molten solder 19 remains in the joining space 13a1 and does not overflow and wet the substrate 14 (conductive pattern 13a), thus preserving the amount of solder 19 in the joining space 13a1.

[0038] After the contact member 17 is thus arranged in the concave joint space 13a1, when the solder 19 solidifies, the solder thickness of the solder 19 is maintained in the joint space 13a1. Thus, a lower end portion of the inner wall of the hollow hole 17b of the contact member 17, which is located on the side of the open end portion 17b2, is joined to the solder 19. Further, a lower end portion of the outer wall of the contact member 17, which is located on the side of the open end portion 17b2, is joined to the solder 19.

[0039] Thus, a contact area between the contact component 17 and the solder 19 is preserved, and the solder thickness of the solder 19 joining the contact component 17 and the conductive pattern 13a is maintained. This achieves sufficient joining strength between the contact component 17 and the conductive pattern 13a (joining space 13a1). Therefore, a reduction in the reliability of the semiconductor device 10 is prevented.

[0040] Furthermore, since an appropriate amount of solder 19 is retained in the joining space 13a1, no additional amount of solder 19 needs to be applied in advance. This prevents the solder 19 from creeping up into the hollow hole 17b of the contact member 17 caused by the heat applied when the contact member 17 is joined to the conductive pattern 13a.

[0041] Next, a shape in a plan view of the concave joining space 13a1 formed in the conductive pattern 13a is shown with reference to Fig. 4A and Fig. 4B.

[0042] Fig. 4A and Fig. 4B are plan views of joining spaces formed in the conductive pattern of the semiconductor device of the first embodiment.

[0043] As in Fig. 4A, the shape in a plan view of the joining space 13a1 formed in the conductive pattern 13a may be a circle corresponding to the annular open end portion 17b2 (see Fig. 2A and Fig. 2B) of the contact member 17. In this case, the contact member 17 is arranged in a central portion of the joining space 13a1, and the distance from the outer periphery of the open end portion 17b2 of the contact member 17 to the inner wall portion 13a2 is desirably the joining distance D1 as shown in Fig. 3.

[0044] As in Fig. 4B, the shape in a plan view of the joining space 13a1 formed in the conductive pattern 13a may be a square, which defines the outer periphery of the open end portion 17b2 (see Fig. 2A and Fig. 2B) of the contact component 17. In this case, too, similar to Fig. 4A, the contact member 17 is arranged in a central portion of the joining space 13a1, and the distance from the outer periphery of the open end portion 17b2 of the contact member 17 to the inner wall portion 13a2 is desirably the joining distance D1 as shown in Fig. 3.

[0045] Fig. 4A and Fig. 4B depict the shape of the joining space 13a1 in a plan view, which is a circle or a square. However, the shape is not limited to this. For example, the shape of the joining space 13a1 in a plan view can be an ellipse, a rectangle, or a polygon.

[0046] Next, a method of applying solder to the conductive pattern 13a of the substrate 14 will be described.

[0047] As in Fig. 1, since the semiconductor element 15 and the contact components 17 are assembled with the conductive patterns 13a, 13d, 13e and 13f in the semiconductor device 10, corresponding solder metals are applied to the conductive patterns 13a, 13d, 13e and 13f.

[0048] In the semiconductor device 10, screen printing can be used to apply the solder metals that join the semiconductor element 15 and the contact components 17 to the conductive patterns. The following describes the methods for applying the solder metals to the conductive patterns 13a and 13e of the semiconductor device 10 using screen printing with reference to Fig. 5A to 5D.

[0049] Fig. 5A to 5D illustrate a method for applying solder metals in the semiconductor device of the first embodiment. Fig. 5A to 5D illustrate the timing of the process when a solder is applied to join one of the contact components 17 to the conductive pattern 13a of the substrate 14 and another solder is applied to join one of the semiconductor elements 15 to the conductive pattern 13e of the substrate 14.

[0050] In Fig. 5A to 5D, among the conductive patterns 13, the conductive pattern 13a in which the joining space 13a1 is formed and the conductive pattern 13e including a joining space 15a for the semiconductor element 15 are shown; and the other conductive patterns 13b, 13c, 13d, and 13f are omitted from the figures.

[0051] First, the joining space 13a1 is formed in advance by etching in a joining area for the contact component 17 defined in the conductive pattern 13a of the substrate 14. Then, as shown in Fig. 5A, a first mask 30 is placed on the conductive patterns 13, which include the conductive pattern 13a in which the concave joining space 13a1 is formed. The first mask 30, which is placed on the substrate 14, is provided with an opening 31 corresponding to the joining space 13a1. Next, the joining space 15a for the semiconductor element 15 arranged on the conductive pattern 13e is covered with the first mask 30.

[0052] Then, a solder material is placed on the first mask 30 and forced to slide along the first mask 30 by a squeegee. Then, the joining space 13a1, which corresponds to the opening 31 of the first mask 30, is filled with the solder material. When the first mask 30 is removed from the substrate 14, the solder 19 has been applied to the joining space 13a1 of the conductive pattern 13a, as shown in Fig. 5B shown.

[0053] Then, as in Fig. 5C, a second mask 30a is placed on the conductive patterns 13, which comprise the conductive pattern 13a in which the solder 19 has been applied to the concave joining space 13a1. The second mask 30a, which is placed on the conductive patterns 13 of the substrate 14, is provided with an opening 31a corresponding to the joining space 15a for the semiconductor element 15. Next, the joining space 13a1 of the conductive pattern 13a, to which the solder 19 has been applied, is covered with the second mask 30a.

[0054] Then, a solder material is applied to the second mask 30a and forced to slide along the second mask 30a by a doctor blade. Then, the joining space 15a, which corresponds to the opening 31a of the second mask 30a, is filled with the solder material. When the second mask 30a is removed from the substrate 14, a solder 19a has been applied to the joining space 15a for the semiconductor element 15 formed on the conductive pattern 13e, as shown in Fig. 5D shown.

[0055] Using the application method described above, the solder metal 19a for joining the semiconductor element 15 and the solder metal 19 for joining the contact component 17 are applied to the conductive patterns 13e and 13a, respectively.

[0056] Next, another method for applying the solder metals to the conductive patterns 13 of the semiconductor device 10 using screen printing will be described with reference to Fig. 6A and Fig. 6B.

[0057] Fig. 6A and Fig. 6B illustrate another method for depositing the solder metals in the semiconductor device of the first embodiment.

[0058] Also in Fig. 6A and Fig. 6B, among the conductive patterns 13, the conductive pattern 13a in which the joining space 13a1 is formed and the conductive pattern 13e including the joining space 15a for the semiconductor element 15 are shown; and the other conductive patterns 13b, 13c, 13d, and 13f are omitted from the figures.

[0059] Also in this case, similar to the above description, the joining space 13a1 is formed in advance by etching in a joining area for the contact component 17 defined in the conductive pattern 13a of the substrate 14. Then, as shown in Fig. 6A, a third mask 30b is placed on the conductive patterns 13 in which the concave joining space 13a1 is formed. The third mask 30b, which is placed on the substrate 14, is provided with an opening 31b corresponding to the joining space 13a1 and with the opening 31a corresponding to the joining space 15a for the semiconductor element 15. In this case, the opening area of ​​the opening 31b is smaller than the opening area of ​​the joining space 13a1.

[0060] Then, a solder material is applied to the third mask 30b and forced to slide along the third mask 30b by a squeegee. Then, the joining space 15a for the semiconductor element 15, which corresponds to the opening 31a of the third mask 30b, is filled with the solder material. The joining space 13a1, which corresponds to the opening 31b of the third mask 30b, is also filled with the solder material. Since the opening area of ​​the opening 31b is smaller than the opening area of ​​the joining space 13a1, the amount of solder material that is introduced into the joining space 13a1 by the squeegee is now limited. This limitation prevents overfilling of the solder material into the joining space 13a1.

[0061] Thus, when the third mask 30b is removed from the substrate 14, the solder 19 has been applied to the joining space 13a1 of the conductive pattern 13a, and the solder 19a has been applied to the joining space 15a for the semiconductor element 15, as shown in Fig. 6B shown.

[0062] Using the application method described above, the solder 19a for joining the semiconductor element 15 and the solder 19 for joining the contact component 17 are applied to the conductive patterns 13e and 13a, respectively. In comparison to the Fig. The application process shown in Figures 5A to 5D eliminates the Fig. 6A and Fig. The deposition process shown in Figure 6B eliminates the need to replace a mask, thus reducing the laborious work and production cost of the semiconductor device. Second embodiment

[0063] Next, another embodiment of the contact member 17 will be described with reference to Fig. 7A and Fig. 7B.

[0064] Fig. 7A and Fig. 7B depict a contact component of a second embodiment. Fig. 7A is a plan view of a contact component 27. Fig. Figure 7B is a cross-sectional view taken along an alternate long and short dashed line XX of Fig. 7A seen.

[0065] The contact member 27 includes a body portion 17a, a flange 17c formed at the open end portion 17b1 of the body portion 17a, and a flange 17d formed at the open end portion 17b2 of the body portion 17a. A portion of the contact member 27 on the flange 17d side (or on the flange 17c side) is joined to the conductive pattern 13 using the solder 19. The external connection terminal 18 is press-fitted into a portion of the contact member 27 on the flange 17c side (or on the flange 17d side) opposite the open end portion joined to the conductive pattern. Here, the flanges 17c and 17d are formed, for example, at the two open end portions 17b1 and 17b2, respectively. However, a flange may be formed on only one of the open end portions.

[0066] The body portion 17a is shaped like a cylinder in which the hollow hole 17b is formed. The hollow hole 17b passes through a portion between the open end portions 17b1 and 17b2. The flange 17c is shaped like a ring and is provided with convex portions 17c1, 17c2, and 17c3 at three portions of the outer peripheral portion of the flange 17c. In the flange 17c, the thickness of the convex portions 17c1, 17c2, and 17c3 is greater than the thickness of a bottom portion 17c5 of the flange 17c. Regarding the thickness of a lateral edge surface 17c4 along the outer periphery of the flange 17c, the thickness of the lateral edge surface 17c4 of the convex portions 17c1, 17c2, and 17c3 is greater than the thickness of the lateral edge surface 17c4 of the bottom portion 17c5. Furthermore, stepped portions 17c6 are formed in steps between the convex portions 17c1, 17c2, and 17c3 and the bottom portion 17c5.The height of the step portions 17c6 is a difference between the thickness of the convex portions 17c1, 17c2 and 17c3 and the thickness of the bottom portion 17c5.

[0067] The flange 17d has the same structure as the flange 17c. That is, the flange 17d is formed like a ring and is provided with convex portions (of the convex portions, the convex portions 17d1 and 17d2 are shown) at three portions of the outer peripheral portion of the flange 17d. In the flange 17d in which the convex portions 17d1 and 17d2 are formed, the thickness of the convex portions 17d1 and 17d2 is greater than the thickness of a bottom portion 17d5 of the flange 17d. Thus, with respect to the thickness of a lateral edge surface 17d4 along the outer periphery of the flange 17d, the thickness of the lateral edge surface 17d4 of the convex portions 17d1 and 17d2 is greater than the thickness of the lateral edge surface 17d4 of the bottom portion 17d5. In addition, the step portions 17d6 are formed in steps between the convex portions 17d1 and 17d2 and the bottom portion 17d5.The height of the step portions 17d6 is a difference between the thickness of the convex portions 17d1 and 17d2 and the thickness of the bottom portion 17d5. The height of the step portions 17d6 is preferably 0.01 mm or more and 0.2 mm or less.

[0068] With the convex portions 17c1, 17c2, 17c3, 17d1, and 17d2 formed in the outer peripheral portions of the flanges 17c and 17d, the flanges 17c and 17d ensure a predetermined thickness of the solder 19 joining the contact component 27 and the conductive pattern 13. This maintains a higher joining strength between the conductive pattern 13 and the contact component 27.

[0069] In the contact member 27 having such a structure, the inner diameter of the body portion 17a is preferably 0.2 mm or more and 2.00 mm or less, and more preferably 0.5 mm or more and 1.5 mm or less. The thickness of the convex portions 17c1, 17c2, 17c3, 17d1, and 17d2 of the flanges 17c and 17d is preferably 0.05 mm or more and 0.3 mm or less, and more preferably 0.1 mm or more and 0.2 mm or less.

[0070] Next, a joining portion of the contact component 27 is bonded to the conductive pattern 13 of the substrate 14 with reference to Fig. 8 described.

[0071] Fig. Fig. 8 is a side cross-sectional view of a joining portion of a contact member of a semiconductor device of the second embodiment. Similar to Fig. 3 of the first embodiment forms Fig. 8 shows a portion of the substrate 14 in which the conductive pattern 13a is formed. In the second embodiment, the concave joining space 13a1 formed in the conductive pattern 13a of the substrate 14 of the semiconductor device 10 of the first embodiment is depicted in relation to the flange 17d of the contact component 27. In the flange 17d, at least the bottom portion 17d5, the step portions 17d6, and the lateral edge surface 17d4 (see Fig. 7B) each have a joining region for joining with the solder 19. Furthermore, the bottom portion of the convex portion 17d1 may have a joining region for joining with the solder 19. The entire surface of the bottom portion 17d5 and the step portions 17d6 may be used as a joining region for joining with the solder 19. Alternatively, a partial surface of each of the bottom portion 17d5, the step portions 17d6, and the side edge surface 17d4 may be used as a joining region.

[0072] The thickness of the conductive pattern 13a is preferably 0.1 mm or more and 1.0 mm or less, and more preferably 0.2 mm or more and 0.5 mm or less. The height of the inner wall portion 13a2 is preferably equal to or less than 0.8 times the thickness of the conductive pattern 13a; and more preferably equal to or less than 0.5 times the thickness of the conductive pattern 13a. The height of the inner wall portion 13a2 does not exceed 0.8 times the thickness of the conductive pattern 13a; it is preferably equal to or greater than 0.5 times the height of the step portions 17d6 of the flange 17d (see Fig. 7B); and is more preferably equal to or greater than 1.0 times the height of the step portions 17d6. Alternatively, the height of the inner wall portion 13a2 does not exceed 0.8 times the thickness of the conductive pattern 13a; preferably, it is equal to or greater than 0.2 times the thickness of the convex portions 17d1 and 17d2 of the flange 17d (see Fig. 7B); and more preferably, it is equal to or greater than 1.0 times the thickness of the convex portions 17d1 and 17d2. The width of the joining space 13a1 is preferably equal to or greater than 1.05 times the outer diameter of the flange 17d and equal to or less than 1.5 times the outer diameter of the flange 17d; and more preferably, equal to or greater than 1.1 times the outer diameter of the flange 17d and equal to or less than 1.25 times the outer diameter of the flange 17d. When the contact component 27 is arranged in a central portion of the joining space 13a1 having the above-described diameter, a suitable joining distance D1 from the lateral edge surface 17d4 (see Fig. 7B) of the flange 17d of the contact component 27 to the inner wall section 13a2.

[0073] The solder 19 is arranged as a joining element in the joining space 13a1 of the conductor pattern 13. The solder 19 may be a lead-free tin-based solder. The portion of the contact component 27 on the flange 17d side is arranged in the joining space 13a1, where the molten solder 19 is arranged; then the contact component 27 is Fig. 8 pressed down.

[0074] At this time, since the contact member 27 is arranged in the concave joining space 13a1 formed in the conductive pattern 13a, the molten solder 19 remains in the joining space 13a1 and does not overflow and wet the substrate 14 (conductive pattern 13a), so that the amount of the solder 19 in the joining space 13a1 is preserved.

[0075] After the contact member 27 is thus arranged in the concave joint space 13a1, when the solder 19 solidifies, the solder thickness of the solder 19 is maintained in the joint space 13a1. Thus, a lower end portion of the inner wall of the hollow hole 17b of the contact member 27, which is located on the flange 17d side, is joined to the solder 19. Further, the side edge surface 17d4 of the contact member 27, which is located on the flange 17d side, is joined to the solder 19.

[0076] Thus, a contact area between the contact component 27 and the solder 19 is maintained, and the solder thickness of the solder 19 joining the contact component 27 and the conductive pattern 13a is maintained. This achieves sufficient joining strength between the contact component 27 and the conductive pattern 13a (joining space 13a1). Therefore, a reduction in the reliability of the semiconductor device 10 is prevented.

[0077] Furthermore, since an appropriate amount of solder 19 is retained in the joining space 13a1, no additional amount of solder 19 needs to be applied in advance. This prevents the solder 19 from creeping up into the hollow hole 17b of the contact component 27 caused by the heat applied when the contact component 27 is joined to the conductive pattern 13. Third embodiment

[0078] In a third embodiment, the concave joining space formed in the conductive pattern 13a of the substrate 14 of the semiconductor device 10 of the second embodiment is widened toward the opening of the concave joining space, as shown in Fig. 9 shown.

[0079] Fig. 9 is a side cross-sectional view of a joining portion of a contact member of a semiconductor device of the third embodiment.

[0080] In a joining space 23a1 of the third embodiment, an inner wall portion 23a2 is inclined at an angle greater than a right angle (or at an obtuse angle) relative to the bottom portion 13a3. Meanwhile, the joining space 23a1 described below, which is formed in the conductive pattern 13a, is also formed in other conductive patterns 13.

[0081] Similar to Fig. 8, since the contact member 27 is disposed in the concave joining space 23a1 formed in the conductive pattern 13a, the molten solder 19 remains in the joining space 23a1 and does not overflow and wet the substrate 14 (conductive pattern 13a), so that the amount of the solder 19 in the joining space 23a1 is preserved.

[0082] After the contact component 27 is arranged in the concave joint space 23a1, when the solder 19 solidifies, the solder thickness of the solder 19 is maintained in the joint space 23a1. Thereby, the bottom portion 17d5 and the step portions 17d6 (see Fig. 7B) of the flange 17d of the contact component 27 is joined to the solder 19. In addition, a lower end portion of the inner wall of the hollow hole 17b of the body portion 17a of the contact component 27 is joined to the solder 19. Furthermore, the lateral edge surface 17d4 (see Fig. 7B) of the flange 17d of the contact component 27 is joined to the solder metal 19.

[0083] Thus, a contact area between the contact member 27 and the solder 19 is preserved, and the solder thickness of the solder 19 joining the contact member 27 and the conductive pattern 13a is maintained. This achieves sufficient joining strength between the contact member 27 and the conductive pattern 13a (joining space 23a1). Therefore, a reduction in the reliability of the semiconductor device 10 is prevented. In addition, since an appropriate amount of the solder 19 is maintained in the joining space 23a1, no additional amount of solder 19 needs to be applied in advance. This prevents creep of the solder 19 into the hollow hole 17b of the contact member 27 caused by the heat applied when joining the contact member 27 to the conductive pattern 13a.

[0084] In the case of the joining space 23a1, which is Fig. As shown in Fig. 9, since the inner wall portion 23a2 is inclined at an obtuse angle relative to the bottom portion 13a3, the contact member 27 is easily fitted into the joining space 23a1. With this structure, the assembly work of the contact member 27 to the joining space 23a1 is facilitated, thereby reducing the assembly workload and the production cost of the semiconductor device 10.

[0085] In the third embodiment, the description has been given for the configuration using the contact member 27 in which the flanges 17c and 17d are made of Fig. 7A and Fig. 7B. Another configuration using the contact component 17 shown in Fig. 2A and Fig. 2B, however, also produces similar effects. Fourth embodiment

[0086] In a fourth embodiment, the description will be given for a case where a convex portion (protruding portion) is formed in a central portion of the joining space 13a1 of the conductive pattern 13a of the semiconductor device 10 of the first embodiment. Meanwhile, a joining space 33a1 described below, which is formed in the conductive pattern 13a, is also formed in other conductive patterns 13.

[0087] The fourth embodiment also uses the semiconductor device 10 and the contact member 27 shown in Fig. 1, Fig. 7A and Fig. 7B, with the exception of the joining space of the conductive pattern 13a. Thus, the detailed description of the semiconductor device 10 and the contact component 27 is omitted.

[0088] Next, a joining portion of the contact component 27 is bonded to the conductive pattern 13a of the substrate 14 with reference to Fig. 10 described.

[0089] Fig. 10 is a side cross-sectional view of a joining portion of a contact member of the semiconductor device of the fourth embodiment.

[0090] The joining space 33a1 is formed in the joining region of the conductive pattern 13a of the substrate 14, in which the contact component 27 is to be arranged. The joining space 33a1 is concave and shaped like a ring, and has a cylindrical convex portion 33b formed in a central portion of the joining space 33a1. The joining space 33a1 is formed by etching the joining region of the conductive pattern 13a defined for the contact component 27, leaving the convex portion 33b exposed. The joining space 33a1 includes a bottom portion 33a3 perpendicular to the stacking direction of the substrate 14 and formed in a circular shape, and an inner wall portion 13a2 extending perpendicular to the bottom portion 33a3 and formed along the outer periphery of the bottom portion 33a3. In addition, the joining space 33a1 includes a peripheral wall 33b1 of the convex portion 33b. The shape of the peripheral wall 33b1 is a circle in a plan view.

[0091] The height of the inner wall portion 13a2 is the same as that of the second embodiment. The width (diameter) of the joint space 33a1 is preferably equal to or greater than 1.05 times the outer diameter of the flange 17d and equal to or less than 1.50 times the outer diameter of the flange 17d; and more preferably equal to or greater than 1.10 times the outer diameter of the flange 17d and equal to or less than 1.25 times the outer diameter of the flange 17d. When the contact component 27 is arranged in a central portion of the joint space 33a1 having the above-described diameter, a suitable joint distance D1 from the lateral edge surface 17d4 (see Fig. 7B) of the flange 17d of the contact component 27 to the inner wall section 13a2.

[0092] A width (diameter) D2 of the convex portion 33b is preferably equal to or greater than 0.5 times the width (diameter) of the hollow hole 17b of the contact member 27 and less than 1.0 times the width (diameter) of the hollow hole 17b; and more preferably equal to or greater than 0.6 times the width (diameter) of the hollow hole 17b and equal to or less than 0.9 times the width (diameter) of the hollow hole 17b. With this structure, an appropriate distance D3 is achieved from the peripheral wall 33b1 of the convex portion 33b to the inner wall of the hollow hole 17b of the contact member 27 into which the convex portion 33b enters.

[0093] The shape of the inner wall portion 13a2 of the joining space 33a1 in a plan view may be a circle, as shown in Fig. 4A, which corresponds to the shape of the annular flange 17d of the contact component 27. Alternatively, the shape may be a square, as in Fig. 4B, which receives the annular flange 17d of the contact component 27.

[0094] The solder 19 is arranged in the joining space 33a1 of the conductor pattern 13a. A portion of the contact component 27 on the side of the flange 17d is arranged in the joining space 33a1, where the molten solder 19 is arranged. Now, the convex portion 33b formed on the joining space 33a1 allows the contact component 27 to be correctly positioned relative to the joining space 33a1. Then, the contact component 27 is Fig. 10 is pressed downward, with the convex portion 33b being fitted into the open end portion 17b2 of the hollow hole 17b of the body portion 17a of the contact member 27.

[0095] At this time, since the contact component 27 is arranged in the joining space 33a1 formed in the conductive pattern 13a, the molten solder 19 remains in the joining space 33a1 and does not overflow and wet the substrate 14 (conductive pattern 13a), so that the amount of the solder 19 in the joining space 33a1 is preserved.

[0096] After the contact component 27 has been arranged in the joining space 33a1, when the solder 19 solidifies, the solder thickness of the solder 19 is maintained in the joining space 33a1. Thereby, the bottom portion 17d5 and the step portions 17d6 (see Fig. 7B) of the flange 17d of the contact component 27 is joined to the solder 19. In addition, a lower end portion of the inner wall of the hollow hole 17b of the body portion 17a of the contact component 27 is joined to the solder 19. Furthermore, the lateral edge surface 17d4 (see Fig. 7B) of the flange 17d of the contact component 27 is joined to the solder metal 19.

[0097] In addition, since the convex portion 33b enters the open end portion 17b2 of the hollow hole 17b of the contact member 27, the amount of solder 19 entering the open end portion 17b2 of the hollow hole 17b of the contact member 27 is limited compared to the amount of solder 19 in the first and second embodiments. For example, even if a vacuum is created in the hollow hole 17b of the contact member 27 to remove defects of the solder 19, the amount of solder 19 creeping up toward the open end portion 17b1 of the hollow hole 17b is reduced because the convex portion 33b limits the amount of solder 19 entering the hollow hole 17b. This prevents a reduction in the amount of the solder 19 of the joining space 33a1 and preserves the solder thickness of the solder 19 of the joining space 33a1 more reliably.

[0098] Thus, a contact area between the contact component 27 and the solder 19 is maintained, and the solder thickness of the solder 19 joining the contact component 27 and the conductive pattern 13a is maintained more reliably than in the first and second embodiments. This achieves sufficient joining strength between the contact component 27 and the conductive pattern 13a (joining space 33a1). Therefore, a reduction in the reliability of the semiconductor device 10 is prevented.

[0099] In addition, since an appropriate amount of solder 19 is retained in the joining space 33a1, no additional amount of solder 19 needs to be applied in advance. Furthermore, the amount of solder is limited by the convex portion 33b formed at the joining space 33a1. This can more effectively prevent the solder 19 from creeping up into the hollow hole 17b of the contact member 27, which is caused by the heat applied when the contact member 27 is joined to the conductive pattern 13a.

[0100] The creepage of the solder 19 is more effectively prevented by increasing the height of the convex portion 33b as much as possible. However, since the external connection terminal 18 is press-fitted into a portion of the contact member 27 on the side of the open end portion 17b1, the height of the convex portion 33b is preferably equal to or greater than 0.5 times the height of the inner wall portion 13a2 and equal to or less than 2.0 times the height of the inner wall portion 13a2; and more preferably equal to the height of the inner wall portion 13a2.

[0101] The convex portion 33b may be formed in a central portion of the joining space 23a1 ( Fig. 9) of the third embodiment. In this case, similar effects to those of the fourth embodiment are achieved.

[0102] In the fourth embodiment, the description has been made for the configuration using the contact member 27 in which the flanges 17c and 17d of Fig. 7A and Fig. 7B. Another configuration using the contact component 17 shown in Fig. 2A and Fig. 2B, however, also produces similar effects. Fifth embodiment

[0103] In a fifth embodiment, the description will be given for a case where the inner wall portion 13a2 of the joining space 33a1 of the conductive pattern 13a of the semiconductor device 10 of the fourth embodiment is inclined at an acute angle relative to the bottom portion 33a3. Here, a joining space 43a1 described below, which is formed in the conductive pattern 13a, is also formed in other conductive patterns 13.

[0104] The fifth embodiment also uses the semiconductor device 10 and the contact member 27 shown in Fig. 1, Fig. 7A and Fig. 7B, with the exception of the joining space of the conductive pattern 13a. Thus, the detailed description of the semiconductor device 10 and the contact component 27 is omitted.

[0105] Next, a joining portion of the contact component 27 is bonded to the conductive pattern 13a of the substrate 14 with reference to Fig. 11 described.

[0106] Fig. 11 is a side cross-sectional view of a joining portion of a contact member of the semiconductor device of the fifth embodiment.

[0107] The joining space 43a1 is formed in the joining region of the conductive pattern 13a of the substrate 14, in which the contact component 27 is to be arranged. The joining space 43a1 is concave and shaped like a ring and has a convex portion 43b formed in a central portion of the joining space 43a1. The joining space 43a1 is formed by etching the joining region of the conductive pattern 13a defined for the contact component 27, leaving the convex portion 43b exposed. The joining space 43a1 includes a bottom portion 43a3 perpendicular to the stacking direction of the substrate 14 and formed in a circular shape, and an inner wall portion 43a2 inclined at an angle less than a right angle (or at an acute angle) relative to the bottom portion 43a3. Furthermore, the joining space 43a1 includes a peripheral wall 43b1 of the convex portion 43b. The peripheral wall 43b1 is also inclined at an acute angle relative to the bottom portion 43a3.The depth of the joining space 43a1 is equal to the height of the inner wall portion 13a2 of the second embodiment. Preferably, the widths (diameters) of the joining space 43a1 from the front surface of the conductive pattern 13a to the bottom portion 43a3 fall within the following range. Specifically, the widths (diameters) are equal to or greater than 1.05 times the outer diameter of the flange 17d and equal to or less than 1.5 times the outer diameter of the flange 17d; and more preferably, equal to or greater than 1.1 times the outer diameter of the flange 17d and equal to or less than 1.25 times the outer diameter of the flange 17d. When the contact component 27 is arranged in a central portion of the joining space 43a1 having the above-described diameters, an appropriate joining distance from the lateral edge surface 17d4 (see ). Fig. 7B) of the flange 17d of the contact component 27 to the inner wall portion 43a2. The shape of the inner wall portion 43a2 of the joining space 43a1 in a plan view may be a circle, as in Fig. 4A, which corresponds to the shape of the annular flange 17d of the contact component 27. Alternatively, the shape may be a square, as in Fig. 4B, which receives the annular flange 17d of the contact component 27.

[0108] The solder 19 is arranged in the joining space 43a1 of the conductor pattern 13a. A portion of the contact component 27 on the side of the flange 27d is arranged in the joining space 43a1, where the molten solder 19 is arranged. Now, the convex portion 43b formed on the joining space 43a1 allows the contact component 27 to be correctly positioned relative to the joining space 43a1. Then, the contact component 27 is Fig. 11 is pressed downward, with the convex portion 43b being fitted into the open end portion 17b2 of the hollow hole 17b of the body portion 17a of the contact member 27.

[0109] At this time, since the contact component 27 is arranged in the joining space 43a1 formed in the conductive pattern 13a, the molten solder 19 remains in the joining space 43a1 and does not overflow and wet the substrate 14 (conductive pattern 13a), so that the amount of the solder 19 in the joining space 43a1 is preserved.

[0110] After the contact component 27 has been arranged in the joining space 43a1, when the solder 19 solidifies, the solder thickness of the solder 19 is maintained in the joining space 43a1. Thereby, the bottom portion 17d5 and the step portions 17d6 (see Fig. 7B) of the flange 17d of the contact component 27 is joined to the solder 19. In addition, a lower end portion of the inner wall of the hollow hole 17b of the body portion 17a of the contact component 27 is joined to the solder 19. Furthermore, the lateral edge surface 17d4 (see Fig. 7B) of the flange 17d of the contact component 27 is joined to the solder metal 19.

[0111] Furthermore, since the convex portion 43b enters the open end portion 17b2 of the hollow hole 17b of the contact member 27, the amount of solder 19 entering the open end portion 17b2 of the hollow hole 17b of the contact member 27 is limited compared to the amount of solder 19 in the first and second embodiments. Therefore, the amount of solder 19 creeping up toward the open end portion 17b1 of the hollow hole 17b is reduced, as in the fourth embodiment. This prevents a reduction in the amount of solder 19 of the joint space 43a1 and more reliably preserves the solder thickness of the solder 19 of the joint space 43a1. Similar to the fourth embodiment, the creeping up of the solder 19 is prevented by increasing the height of the convex portion 43b as much as possible.However, since the external connection terminal 18 is press-fitted into a portion of the contact member 27 on the side of the open end portion 17b1, the height of the convex portion 43b is preferably equal to or higher than 0.5 times the height of the inner wall portion 13a2 (see . Fig. 8) and equal to or less than 2.0 times the height of the inner wall portion 13a2; and more preferably equal to the height of the inner wall portion 13a2 (see Fig. 8).

[0112] The inner wall portion 43a2 of the joining space 43a1 is inclined at an acute angle relative to the bottom portion 43a3. Furthermore, the peripheral wall 43b1 of the convex portion 43b is also inclined at an acute angle relative to the bottom portion 43a3. As a result, the solder 19 between the inner wall portion 43a2 and the bottom portion 43a3 is formed in a conical shape, and the solder 19 between the peripheral wall 43b1 and the bottom portion 43a3 is also formed in a conical shape. With this structure, there are increased solder thicknesses between the inner wall portion 43a2 and the flange 17d of the contact component 27 and between the peripheral wall 43b1 and the flange 17d of the contact component 27, thus increasing the joining strength between the contact component 27 and the conductive pattern 13a.

[0113] Thus, the solder thickness of the solder 19 joining the contact component 27 and the conductive pattern 13a is more reliably maintained than in the first and second embodiments, and thus a more reliable joining strength between the contact component 27 and the conductive pattern 13a (joining space 43a1) is achieved. Therefore, a reduction in the reliability of the semiconductor device 10 is prevented.

[0114] In addition, since an appropriate amount of the solder 19 is retained in the joining space 43a1, no additional amount of solder 19 needs to be applied in advance. This prevents the solder 19 from creeping up into the hollow hole 17b of the contact member 27, which is caused by the heat applied when the contact member 27 is joined to the conductive pattern 13a. In the fifth embodiment, the description was made for the case where the convex portion 43b is formed at the joining space 43a1. The joining space 43a1 also increases the joining strength between the contact member 27 and the conductive pattern 13a relative to the joining strength of the second embodiment, even when the convex portion 43b is not formed, as in the case of the joining space 13a1 ( Fig. 8) of the second embodiment.

[0115] In addition, the joining space 43a1 also increases the joining strength between the contact component 27 and the conductive pattern 13a relative to the joining strength of the fourth embodiment, even if the peripheral wall 43b1 of the convex portion 43b is perpendicular to the bottom portion 43a3.

[0116] In the fifth embodiment, the description has been made for the configuration using the contact member 27 in which the flanges 17c and 17d of Fig. 7A and Fig. 7B. Another configuration using the contact component 17 shown in Fig. 2A and Fig. 2B, however, also produces similar effects.

[0117] The technique of the present disclosure prevents the solder from overflowing and wetting the substrate, thereby preventing a reduction in the bond strength between the conductive pattern and the contact component. Furthermore, the solder from creeping up into the hollow hole of the contact component is also prevented. Therefore, a reduction in the reliability of the semiconductor device is prevented.

Claims

[1] A semiconductor device (10) comprising: a substrate (14) comprising a conductive pattern (13) in which a concave joining space (13a1) is formed, and an insulating plate (11) on which the conductive pattern (13) is formed; and a contact member (27) comprising a body portion (17a) in which a cylindrical hollow hole (17b) is formed, and a flange (17d) formed on at least one of open end portions (17b1, 17b2) on both sides of the body portion (17a) and extending outward from the one of the open end portions (17b1, 17b2) in a radial direction of the hollow hole (17b); wherein, when the flange (17d) is arranged at the one of the open end portions (17b1, 17b2) of the contact member (27) in the joining space (13a1), an entire front surface of the flange (17d) is arranged at a lower level than a front surface of the conductive pattern (13) in a side view of the semiconductor device (10), and an inner wall of the hollow hole (17b) at the one of the open end portions (17b1, 17b2) of the body portion (17a) and an outer periphery of the flange (17d) are joined to the conductive pattern (13) in the joining space (13a1) by means of a joining element (19). [2] The semiconductor device (10) according to claim 1, wherein the joining space (13a1) includes a bottom portion (13a3) perpendicular to a stacking direction of the substrate (14), and an inner wall portion (13a2) perpendicular to the bottom portion (13a3) and formed along the outer periphery of the bottom portion (13a3). [3] The semiconductor device (10) according to claim 1, wherein the joining space (13a1) comprises a bottom portion (13a3) perpendicular to a stacking direction of the substrate (14), and an inner wall portion (13a2) inclined at an obtuse angle with respect to the bottom portion (13a3) and formed along the outer periphery of the bottom portion (13a3). [4] The semiconductor device (10) according to claim 1, wherein the joining space (13a1) includes a bottom portion (13a3) perpendicular to a stacking direction of the substrate (14), and an inner wall portion (13a2) inclined at an acute angle with respect to the bottom portion (13a3) and formed along the outer periphery of the bottom portion (13a3). [5] A semiconductor device (10) according to any one of claims 1 to 4, wherein a protruding portion (33b) is formed on the conductive pattern (13), and wherein the protruding portion (33b) is configured to enter the hollow hole (17b) of the contact member (27) when the contact member (27) is joined to the conductor pattern (13) in the joining space (13a1). [6] The semiconductor device (10) according to any one of claims 1 to 5, wherein the width of the joining space (13a1) is preferably equal to or greater than 1.05 times the outer diameter of the flange (17d) and equal to or less than 1.5 times the outer diameter of the flange (17d). [7] The semiconductor device (10) according to claim 5, wherein an outer diameter of the protruding portion (33b) is equal to or larger than 0.5 times an inner diameter of the hollow hole (17b) of the contact member (27) and smaller than 1.0 times the inner diameter of the hollow hole (17b) of the contact member (27).

Images