Display device and image-capturing device

Abstract

Display device containing a pixel (30) on a substrate (5) which has a first sub-pixel (10R, 10G, 10B) and a second sub-pixel (10R, 10G, 10B) which emits a color different from the color of the first sub-pixel, wherein each first and second sub-pixel comprises a light-emitting device (11), a transistor (12) connected to the light-emitting device (11), and a capacitive element (16, 17) connected to the transistor, wherein the capacitive element of the first sub-pixel and the capacitive element of the second sub-pixel overlap in a direction perpendicular to a main surface of the substrate, further comprising a conductive layer (36) between the capacitive element of the first sub-pixel and the capacitive element of the second sub-pixel, wherein a potential of the conductive layer (36) is unchanging.

Description

TECHNICAL AREA

[0001] The present invention relates to a display device and an image-capturing device located therein. STATE OF THE ART

[0002] Active-matrix display devices already exist for controlling video signals using transistors in pixels fed to display elements. One example is an organic electroluminescent (EL) display device with a self-illuminating light-emitting device. More precisely, it is an organic EL display device with an organic EL element as the light-emitting device, which is a current-controlling element.

[0003] The organic EL display device contains independently applied red (R), green (G), and blue (B) organic EL materials, which are vapor-deposited using a mask. Additionally, each color of the RGB primary colors can be extracted by combining an organic EL element that emits white light with color filters, instead of applying each of the RGB organic EL materials individually.

[0004] According to Japanese patent application JP 2010 2476 A (Patent Document 1), a display device is structured such that the dimensions of a pixel circuit element present in each sub-pixel vary for each sub-pixel, depending on the required control current. Additionally, the dimensions of a capacitive element also vary in each sub-pixel. The display device is designed to prevent the increase of pattern distortion due to dust or similar factors and to improve the performance rate by avoiding an increase in pixel pattern density within a specific sub-pixel.

[0005] The larger the capacitance of a capacitive element in a current-driven, light-emitting device, which serves to maintain the gate voltage of a transistor connected to the light-emitting device, the better the capacitive element can suppress voltage fluctuations at a pixel electrode during a light-emitting phase. If the voltage fluctuation at a pixel electrode can be suppressed, the display device is able to prevent an increase in the amount of light emitted, which can occur due to voltage fluctuations at low brightness. This process allows for an improvement in contrast. However, to achieve the necessary increase in capacitance of the capacitive element, an expansion of the capacitive element is appropriate. If each sub-pixel is equipped with a capacitive element, however, the spacing at which the capacitive elements can be placed is limited.Therefore, the capacitive element of each sub-pixel is divided into several layers, and the capacitive elements are electrically interconnected, resulting in an increase in capacitance within the capacitive element. However, because it is necessary to delineate the capacitive elements in each sub-pixel by structuring them within the sub-pixel, the size of the capacitive element decreases according to the required spacing for this structuring.

[0006] Furthermore, an OLED display device is disclosed in patent application US 2015 / 0 243 722 A1, while high-resolution OLED devices, displays, and related methods are disclosed in patent application US 2014 / 0 197 385 A1. Additionally, a display device, an electronic device, and a substrate are disclosed in patent application US 2015 / 0 279 872 A1, and a pixel structure is disclosed in patent application US 2011 / 0 149 184 A1. SUMMARY

[0007] Accordingly, the object of the present invention is to create a display device with a sufficiently large capacity of a capacitive element in each sub-pixel that can suppress both voltage fluctuations of a pixel electrode and an increase in the amount of light emission due to voltage fluctuations that may occur at low brightness.

[0008] According to one embodiment of the present invention, a display device according to claim 1 is provided. Further advantageous embodiments are specified in the dependent claims.

[0009] Further features of the present invention will become apparent in the following description of the exemplary embodiments with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. Figure 1 is an overall view of a display device of an exemplary embodiment. Fig. Figure 2 is a representation of a delta-shaped arrangement (triangular arrangement). Fig. 3 is an equivalent circuit of a pixel circuit that is connected to a sub-pixel of the embodiment. Fig. 4A and Fig. Figure 4B shows an arrangement relationship between capacitive elements in a pixel of a first explanatory example. Fig. Figure 5 describes the arrangement relationship between capacitive elements in a pixel of the exemplary embodiment. Fig. Figure 6 describes the arrangement relationship between capacitive elements in a pixel of a second illustrative example. Fig. 7 is a substitute circuit of a pixel circuit that is connected to a sub-pixel of the display device of a comparison example. Fig. 8A and Fig. 8B describes the arrangement relationship between capacitive elements in a pixel of the comparison example. DESCRIPTION OF THE EXAMPLES OF EXECUTION

[0010] Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings. [Example of implementation]

[0011] Preferred embodiments of the display device of the present invention are described below with reference to the drawings.

[0012] Fig. Figure 1 is an overall representation of a display device of the present embodiment. The display device is made of Fig. The device 1 has a display area 1, a horizontal drive circuit 2, a vertical drive circuit 3, and a connection terminal unit 4 on a substrate 5. In the display area 1, a plurality of pixels are arranged in a matrix, each pixel having a plurality of sub-pixels. These plurality of sub-pixels each have a first sub-pixel and a second sub-pixel, which emit a different color than the first sub-pixel. Furthermore, a third sub-pixel may exist, which emits a different color than the first and second sub-pixels. The horizontal drive circuit 2 is a circuit that outputs a data signal and is connected to the output line. The vertical drive circuit 3 is a circuit that outputs a selection signal.The connection terminal unit 4 is a terminal block which outputs a clock signal and an image data signal and the like to the horizontal control circuit 2 and the vertical control circuit 3, and which is connected to the horizontal control circuit 2 and the vertical control circuit 3 by means of cables (not shown).

[0013] Each sub-pixel has a current-driven light-emitting device, a transistor to supply the light-emitting device with electrical current, and a capacitive element to maintain the transistor's gate voltage. The light-emitting device on the sub-pixel can be an organic light-emitting device, such as an organic EL device, with an electrode pair and an organic mixture layer positioned between the electrode pair. Examples of the electrode pair include an anode and a cathode.

[0014] The organic mixture layer in the organic light-emitting device can be formed from a single layer or from a plurality of layers, as long as the organic mixture layer includes a light-emitting layer. If the organic mixture layer is formed from a plurality of layers, these layers can, for example, include a hole injection layer, a hole conduction layer, an electrode confinement layer, a light-emitting layer, a hole confinement layer, an electron transport layer, and an electron injection layer.

[0015] The light-emitting layer can be composed of multiple light-emitting layers. However, if this is the case, the light-emitting layer can come into contact with another light-emitting layer. To prevent this, the space between the light-emitting layer and another light-emitting layer can be filled with an intermediate layer.

[0016] The emission color of the light-emitting layer is not specifically limited, but can be white due to light emissions from a variety of light-emitting layers. Combinations in which the light-emitting layers emit white light include combinations of red, green, and blue, combinations of blue and yellow or yellow-green, or the like. Yellow or yellow-green can be formed by having the same light-emitting layer contain both red and green light-emitting materials.

[0017] In the case of a combination of red, green, and blue light-emitting layers, the space between the blue light-emitting layer and another light-emitting layer can be filled with an intermediate layer. More precisely, if the light-emitting layers are arranged in the order red, blue, and green from the anode side, the intermediate layer can be placed between the red and blue light-emitting layers.

[0018] The light-emitting device can have a protective layer on the electrode pair, which can consist of multiple layers. This protective layer can be formed using CVD, sputtering, ALD, or similar processes. If the protective layer consists of multiple layers, several production processes can be combined. For example, the first protective layer can be formed using a CVD process and the second protective layer using an ALD process. Furthermore, the materials used in the multiple protective layers can vary. Suitable materials for the protective layer include SiN, SiO, Al₂O₃, and SiO₄.

[0019] The light-emitting device may additionally include a color filter, which can be red, green, or blue. The red, green, and blue color filters can be arranged in various ways, including a delta shape, as shown in Fig. Figure 2 shows pixel 30 and sub-pixels 10R, 10G and 10B, which emit the colors red (R), green (G) and blue (B).

[0020] The following is an example in which the light-emitting device is an organic EL element and pixel 30 has sub-pixels 10R, 10G and 10B, each emitting the colors R, G and B, but the present invention is not limited to the present example.

[0021] First, with reference to Fig. 3 describes a circuit that is connected to the sub-pixel of the display device of the present embodiment. Fig. Figure 3 shows a corresponding circuit diagram of the pixel circuit connected to the sub-pixel. In this figure, the sub-pixel 10 includes a current-driven organic EL element 11, the brightness of which changes according to the current flow, and a control circuit that supplies current to the organic EL element 11.

[0022] In the organic EL element 11, the cathode is connected to a common power supply 25, which is interconnected with all sub-pixels 10.

[0023] The control circuit that supplies the organic EL element 11 includes a drive transistor 12, a selection transistor 13, switching transistors 14 and 15, a first capacitive element 16 and a second capacitive element 17. A P-channel transistor is used for each of the drive transistor 12, the selection transistor 13 and the switching transistors 14 and 15.

[0024] The control transistor 12 is a transistor that supplies the light-emitting device with current and the organic EL cell 11 with control current by being connected in series with the organic EL cell 11. Specifically, a drain electrode of the control transistor 12 is connected to an anode (pixel electrode) of the organic EL cell 11.

[0025] In the selection transistor 13, the gate electrode is connected to a sampling line 21, the source electrode to a signal line 24, and the drain electrode to the gate electrode of the drive transistor 12. The signals are fed from the vertical drive circuit 3 through the sampling line 21 to the gate electrode of the selection transistor 13.

[0026] In switching transistor 14, the gate electrode is connected to the sensing line 22, the source electrode to the first power supply potential VDD, and the drain electrode to the source electrode of the driver transistor 12. A signal for controlling the brightness is fed from the vertical driver circuit 3 through the sensing line 22 to the gate electrode of switching transistor 14. In the other switching transistor 15, the gate electrode is connected to the sensing line 23, the source electrode to a second power supply potential VSS, and the drain electrode to the anode of the organic EL cell 11. A signal for controlling the potential of the anode of the organic EL cell 11 is fed from the vertical driver circuit 3 through the sensing line 23 to the gate electrode of switching transistor 15.

[0027] The first capacitive element 16 maintains the gate voltage of the transistor and is connected between the gate electrode and the source electrode of the drive transistor 12. The second capacitive element 17 is connected between the source electrode of the drive transistor 12 and the first power supply potential VDD. Fig. In Figure 3, both the first capacitive element 16 and the second capacitive element 17 are represented as one capacitive element; however, it is permissible to use different capacitive elements connected in parallel as one capacitive element.

[0028] The vertical drive circuit 3, to which the sampling lines 21, 22 and 23 are connected, feeds in signals sequentially, causing the first capacitive element 16 of each sub-pixel to maintain the signal voltage and the reference voltage, and controls the sub-pixels in such a way that they emit light, with the brightness being reproduced according to the signal voltage.

[0029] In Fig. 3. A PMOS transistor is used as a MOS transistor, although an NMOS transistor can also be used. The driver circuit is not limited to a 4Tr2C switching configuration containing four transistors and two capacitive elements. Furthermore, a transistor formed on a silicon wafer can be used as a MOS transistor, as can a thin-film transistor on a glass substrate.

[0030] In sub-pixel 10, with the configuration described above, the selector transistor 13 is switched to a conductive state in response to a signal fed from the vertical drive circuit 3 through the sampling line 21 to the gate electrode. During this process, the selector transistor 13 taps the signal voltage or the reference voltage according to the brightness information and stores the voltage in sub-pixel 10. During the injection of the reference voltage, the vertical drive circuit 3 corrects the deviation of the threshold voltage of the drive transistor 12 in each sub-pixel and can thus reduce the brightness deviation in each sub-pixel caused by the threshold voltage deviation. The stored signal voltage or reference voltage is fed to the gate electrode of the drive transistor 12 and is simultaneously maintained by the first capacitive element 16.

[0031] The drive transistor 12 is designed to operate in a saturated state and receives electrical current from the first power supply potential VDD via the switching transistor 14. This current drives the organic EL cell 11 to emit light. The amount of electrical current flowing through the organic EL cell 11 is determined by the current maintained by the first capacitive cell 16, and the drive transistor 12 can therefore control the amount of light emitted by the organic EL cell 11.

[0032] The switching transistor 14 is switched to a conductive state in response to a signal for controlling the light emission, which is fed from the vertical drive circuit 3 through the scanning line 22 to the gate electrode. In particular, the switching transistor 14 has a control function for the brightness of the organic EL cell 11.

[0033] The switching transistor 15 supplies current from the second power supply potential VSS specifically to the anode of the organic EL cell 11, in response to a signal for controlling the anode potential, which is supplied to the gate electrode by the vertical drive circuit 3 via the scanning line 23. Assuming that the common power supply 25, which is connected to the cathode of the organic EL cell 11, is represented by Vcath and a threshold voltage of the organic EL cell 11 is represented by Vthel, the second power supply potential VSS is configured such that it satisfies the condition VSS < Vcath + Vthel. Thus, the second power supply potential VSS provides the organic EL cell 11 with a reverse bias voltage, provided the switching transistor 15 is in a conductive state, and can therefore switch the organic EL cell 11 to a non-illuminating state.

[0034] In order to describe an arrangement relationship between the capacitive elements in the pixel of the present embodiment, a display device of a comparative example is described below.

[0035] Fig. 7 is an equivalent circuit of a pixel circuit, which is connected to a sub-pixel of the display device of the comparison example. The difference to the pixel circuit that is in Fig. The reason for this, as shown in Figure 3, is that the first capacitive element 16 is designed as a capacitive element with a plurality of capacitive elements 16a, 16b and 16c connected in parallel.

[0036] Fig. 8A and Fig. 8B describes the arrangement relationship between capacitive elements in the pixel of the present comparison example. Fig. Figure 8A schematically shows a cross-section of the first capacitive element 16 of the three sub-pixels 10R, 10G, and 10B of the RGB color space in a pixel 30, with other elements in the pixel circuit omitted. The cross-section shown in Fig. 8A is a plane that is perpendicular to the substrate plane (XY plane) and extends in the direction of sub-pixels 10R, 10G and 10B (X direction), with an unrepresented substrate positioned in the lower part of the page. Fig. 8B is a section view along the line 8B-8B from Fig. 8A.

[0037] In Fig. 8A describes the R sub-pixel 10R. The capacitive elements 16aR, 16bR and 16cR each correspond to the capacitive elements 16a, 16b and 16c from Fig. 7. The capacitive element 16aR is a capacitive element having a layered structure, comprising an insulating layer 32R layered over the lower electrode 31R and an upper electrode 33R layered over the insulating layer 32R. The capacitive elements 16bR and 16cR, with a similar structure, are provided with different wiring and insulating layers, and the capacitive elements 16aR, 16bR, and 16cR in the R sub-pixel 10R can be used as a single capacitive element (first capacitive element 16) by connecting them in parallel. Similarly, in a G sub-pixel 10G and a B sub-pixel 10B, as in the R sub-pixel 10R, the three capacitive elements 16a, 16b and 16c in each sub-pixel are connected in parallel and represent the first capacitive element 16.

[0038] In the comparative example, the multitude of capacitive elements 16a, 16b and 16c, which are layered along a direction (Z-direction) perpendicular to the substrate plane, are connected in parallel in the sub-pixel 10 by using different wiring layers and insulation layers, thereby increasing the capacitance on a planar surface in the sub-pixel 10.

[0039] However, it is necessary to electrically separate the capacitive elements of the different sub-pixels 10 from each other, and according to the comparative example, the size of the capacitive element decreases due to the required distance. In the comparative example, the capacitive elements of the different sub-pixels 10 are electrically separated from each other by using a wiring layer pattern to form the lower electrode 31 and the upper electrode 33. Specifically, with regard to the lower electrode 31, a distance 35 is provided between the lower electrodes 31 to separate the capacitive elements of the different sub-pixels 10 from each other, as shown in Fig. Figure 8B shows the arrangement of an upper electrode 32. The arrangement is similar, and consequently, the capacitive elements 16aR, 16aG, and 16aB are electrically isolated from each other. When a pixel size decreases due to high resolution, the size of the capacitive element decreases due to the available spacing required to structure the capacitive element; however, there is a limit to the increase in capacitance of the capacitive element.

[0040] The comparative example was described with reference to the first capacitive element 16, however, all capacitive elements that have the wiring layer can be described in the same way as above.

[0041] The capacitive element in the pixel of the present first illustrative example is subsequently described with reference to Fig. 4A and Fig. 4B described.

[0042] Fig. 4A and Fig. 4B describe an arrangement relationship between capacitive elements in the pixel of the present first illustrative example. Fig. Figure 4A schematically represents a cross-section of the first capacitive element 16 of the three sub-pixels 10R, 10G, and 10B in pixel 30, omitting other elements in the pixel circuit. The cross-section shown in Fig. 4A is a plane that is perpendicular to the substrate plane (XY plane) and extends in the direction of sub-pixels 10R, 10G and 10B (X direction), with an unspecified substrate positioned in the lower part of the page. Fig. 4B is a section view along the line 4B-4B from Fig. 4A.

[0043] In Fig. 4A describes an R sub-pixel 10R. A first capacitive element 16R corresponds to the first capacitive element 16 in Fig. 3. The first capacitive element 16R is a capacitive element with a layered structure, comprising an insulating layer 32R layered over the lower electrode 31R and an upper electrode 33R layered over the insulating layer 32R. The first capacitive elements 16G and 16B of a G sub-pixel 10G and a B sub-pixel 10B are similar to the R sub-pixel 10R.

[0044] The difference from the comparison example lies in the fact that the first capacitive elements 16 of the various sub-pixels 10 at least partially overlap, can completely overlap, and specifically overlap when viewed from a direction (Z-direction) perpendicular to the substrate plane. More precisely, the first capacitive element 16 is arranged along the planar area of ​​another sub-pixel 10, similar to all R sub-pixels 10R, G sub-pixels 10G, and B sub-pixels 10B. In other words, a first capacitive element 10G of a G sub-pixel 10G is layered over the first capacitive element 16R of an R sub-pixel 10R, and a first capacitive element 16B of a B sub-pixel 10B is layered over the capacitive element 16G of a G sub-pixel 10G, so that they are electrically separated from each other, for example by an insulating layer or the like.

[0045] In the present description, “overlap” can express both “layered” and that the capacitive element of the first sub-pixel is positioned between the substrate and the capacitive element of the second sub-pixel.

[0046] In the present first illustrative example, the locations where the first capacitive elements 16 are placed are not divided by a planar surface in each sub-pixel 10, but rather by the use of multiple layers; and the areas where the first capacitive elements 16 are arranged are divided among different sub-pixels 10 in a planar direction (XY plane direction). This allows the display device to reduce the distance for electrical isolation of the first capacitive elements 16 between the different sub-pixels 10 in the planar direction, and consequently allows for a larger size of the first capacitive element 16 provided in each of the sub-pixels 10.As soon as the capacitance of the first capacitive element 16 increases, the resulting capacitive element 16 suppresses the voltage fluctuation of the pixel electrode, thus preventing the amount of light emission from increasing due to the voltage fluctuation at low brightness and thus improving the contrast.

[0047] In the present first illustrative example, the first capacitive elements 16 of sub-pixel 10 in the same pixel 30 are stacked such that they overlap planarly, and the first capacitive elements 16 of sub-pixels 10 of different pixels 30 are electrically separated from each other by structuring wiring layers, thereby forming a lower electrode 31 and an upper electrode 33. However, sub-pixels 10 that are stacked such that they overlap planarly are not limited to the sub-pixels 10 in the same pixel 30; rather, the first capacitive elements 16 of a sub-pixel 10 from different pixels 30 can, for example, be stacked such that they overlap planarly.Furthermore, the order in which the first capacitive element 16 is layered is not limited to the present first illustrative example, but the first capacitive element 16B can, for example, be attached to the upper part of the first capacitive element 16R and the first capacitive element 16G can be layered on the upper part of the first capacitive element 162B.

[0048] The present first explanatory example was described with respect to the first capacitive element 16; however, all capacitive elements that use a wiring layer can be described similarly. For example, a second capacitive element 17 can be added to the present first explanatory example. Furthermore, it is permissible, as in the comparison example, to construct a capacitive element by combining the setup of connecting capacitive elements of the same sub-pixel in parallel with a setup according to the present first explanatory example. [Example of implementation]

[0049] The present embodiment is described with reference to Fig. 5 described. Fig. Figure 5 is an illustration to describe an arrangement relationship between capacitive elements in a pixel of the present embodiment and shows a cross-section similar to Fig. 4A, where other elements in the pixel circuit are similar to Fig. 4A, have been omitted. The structure and description of the illustrative example can be applied similarly to the present embodiment. The difference between the illustrative example and the present embodiment is that a conductive layer 36 is placed between the capacitive elements 16 of the various sub-pixels 10.

[0050] In the present embodiment, a conductive layer 36 is placed both between the first capacitive element 16R and the first capacitive element 16G, and between the first capacitive element 16G and the first capacitive element 16B. Due to the conductive layer 36 between the first capacitive elements 16 of the different sub-pixels 10, the display device can suppress the capacitive coupling that occurs between the first capacitive elements 16, thus reducing mutual interference between the sub-pixels 10. Therefore, the display device can improve color reproduction. It is desirable that the potential of the conductive layer 36 be constant. For example, the same potential as the second power supply potential VSS or the first power supply potential VDD can be applied. The conductive layer 36 can also serve as a protective layer.

[0051] In the present embodiment, the conductive layer is not arranged in a planar plane (XY plane direction) between the first capacitive elements 16 of the various sub-pixels 10, but rather at a distance in a direction (Z direction) perpendicular to the plane direction. This allows the display device to reduce mutual interference without reducing the area of ​​the first capacitive element 16. [Second illustrative example]

[0052] The present second illustrative example is given with reference to Fig. 6 described. Fig. Figure 6 describes an arrangement relationship between capacitive elements in a pixel of the present second illustrative example and presents a cross-section similar to Fig. 4A represents this, with other elements of the pixel circuitry omitted, similar to Fig.4A. The structure and description of the first explanatory example can be similarly applied to the present second explanatory example. The difference between the first and second explanatory examples is that the arrangement in which the first capacitive elements 16 of the different sub-pixels 10 are stacked so that they overlap planarly applies only to the sub-pixels 10 of certain colors.

[0053] In the second illustrative example presented here, only the first capacitive element 16R of the R sub-pixel 10R and the first capacitive element 16G of the G sub-pixel 10G are layered, so that they overlap planarly. In the first capacitive element 16B of the B sub-pixel 10B, the capacitive elements 16aB and 16bB are connected in parallel. Therefore, in this second illustrative example, unlike the first explanatory example, where the first capacitive element 16 consists of three layers in the direction perpendicular to the planar plane (XY plane direction), the first capacitive element 16 can consist of two layers, and the number of layered capacitive elements 16 is reduced. Consequently, the number of steps required to form the first capacitive elements 16 can be reduced, and therefore, an improvement in yield can be achieved.

[0054] In the second illustrative example presented here, only the first capacitive element of sub-pixel B 10B is positioned so that it does not planarly overlap the first capacitive elements 16R and 16G of the other sub-pixels 10R and 10G. However, this second illustrative example is not limited to this combination, and the combination can be modified according to the characteristics of the display element. For example, if it is necessary to increase the capacitance of the first capacitive elements 16 of sub-pixel G and sub-pixel B 10B compared to sub-pixel R 10R, the first capacitive elements 16G and 16B of sub-pixel G 10G and sub-pixel B 10B can be stacked so that they planarly overlap.

[0055] The display device of the present invention can, for example, serve as a display unit for the following devices: televisions, PC monitors, in automobiles, in mobile devices, smartphones or tablets. [Image-capturing device]

[0056] The display device of the present invention can be used as a display unit of an image-capturing device. The image-capturing device can include an optical system having a plurality of lenses and an image-capturing device that receives light passed through the optical system. The display unit shows an image that has been captured by the image-capturing device.

[0057] The image-capturing device can be a digital still camera, a network camera, or the like. In this case, the display unit can be a rear display unit of a digital still camera, a viewfinder, or a display unit that shows a captured image from another camera and / or the camera's status.

[0058] As described above, according to the present invention, the capacity of the capacitive elements provided in each of the sub-pixels can be increased, and accordingly both voltage fluctuations of the pixel electrode and an increase in the amount of light emission caused by the voltage fluctuation at low brightness can be suppressed.

[0059] As described above, according to the present invention, the capacity of the capacitive elements provided in each of the sub-pixels can be increased, and accordingly both voltage fluctuations of the pixel electrode and the increase in the amount of light emission caused by the voltage fluctuation at low brightness can be suppressed.

[0060] A display device comprises a pixel, which contains a plurality of sub-pixels. Each sub-pixel contains a current-driven light-emitting device, a transistor to supply the light-emitting device with electrical current, and a capacitive element to maintain the gate voltage of the transistor. The capacitive element of one sub-pixel and the capacitive elements of the other sub-pixels overlap at least partially. 1 Display area 2 Horizontal control circuit 3 Vertical control circuit 4 Connection unit 5 Substrat 10 sub-pixels, 10R, 10G, 10B Sub-Pixel 11 Organic EL element 12. Control transistor 13 Selection transistor 14, 15 Switching transistor 16 First capacitive element 16a, 16aR, 16b, 16bR, 16c, 16cR capacitive elements 17 Second capacitive element 21, 22, 23 scanning line 24 Signal line 25 Shared power supply 30 pixels 31, 31R Lower electrode 32, 33, 33R Upper electrode 32R insulation layer 35 distance 36 Conductive layer VDD First Power Supply Potential VSS Second Power Supply Potential

Images