1Optoelectronic component and method for producing the same

Abstract

Optoelectronic component (100) comprising: a substrate (102); a first electrode (104) disposed on the substrate (102) and having a first reflective surface (104a); a second electrode (112) disposed above the first electrode (104) and having a second reflective surface (112a), the second reflective surface (112a) and the first reflective surface (104a) being configured to form an optical cavity; a first layer (106) comprising a first material disposed between the first reflective surface (104a) and the second reflective surface (112a); a second layer (108) comprising a second material disposed between the first layer (106) and the second reflective surface (112a), the second material being different from the first material; and a third layer (110) comprising a third material disposed between the first layer (106) and the second layer (108), the third material being different from the first material and the second material, wherein the second material has a highest occupied molecular orbital (218-1) having a higher energy than the highest occupied molecular orbital (220-1) of the third material, and a lowest unoccupied molecular orbital (218-2) having a higher energy than the lowest unoccupied molecular orbital (220-2) of the third material, and the third material has a highest occupied molecular orbital (220-1) having a higher energy than the highest occupied molecular orbital (216-1) of the first material, and a lowest unoccupied molecular orbital (220-2) having a higher energy than the lowest unoccupied molecular orbital (216-2) of the first material; wherein the first material, the second material and the third material each comprise at least one organic material or a compound of at least one organic material and the energy levels of the first material, the second material and the third material are arranged such that when the optoelectronic component (100) is irradiated by means of an electromagnetic wave, - charge carrier pairs consisting of a charge carrier of a first type and a charge carrier of a second type are generated in the third layer (110) by absorption of the electromagnetic wave in the third material, - the charge carrier pairs generated in the third layer (110) are separated at the interface of the third layer (110) to the first or second layer (106, 108), wherein • Charge carriers of the first type of a charge carrier pair generated in the third layer (110) are transferred from the third layer (110) to the first layer (106) when a charge carrier pair generated in the third layer (110) comes to the interface between the first layer (106) and the third layer (110); • the transfer of charge carriers of the second type of a charge carrier pair generated in the third layer (110) to the first layer (106) is prevented when a charge carrier pair generated in the third layer (110) comes to the interface between the first layer (106) and the third layer (110); • Charge carriers of the second type of a charge carrier pair generated in the third layer (110) are transferred from the third layer (110) to the second layer (108) when a charge carrier pair generated in the third layer (110) comes to the interface between the second layer (108) and the third layer (110); and • the transfer of charge carriers of the first type of a charge carrier pair generated in the third layer (110) to the second layer (108) is prevented when a charge carrier pair generated in the third layer (110) comes to the interface between the second layer (108) and the third layer (110); - the transferred charge carriers of the first type in the first layer (106) are transported to the first electrode (104), and - the transferred charge carriers of the second type in the second layer (108) are transported to the second electrode (112), wherein the third layer (110) consists of at least two individual parts of the third material, wherein the individual parts are spaced from each other by a gap, so that the third layer (110) is arranged as a non-closed layer, and wherein the third layer (110) is arranged such that it is located in a maximum of a longitudinal mode of the electromagnetic wave when the optoelectronic component (100) is irradiated by means of the electromagnetic wave.

Description

[0001] Various embodiments relate to an optoelectronic component and a method for producing an optoelectronic component.

[0002] In general, the detection of radiation (e.g. electromagnetic radiation) using photodiodes is based on the generation of charge carriers due to the absorption of the radiation in the photodiode. For example, conventional photodiodes with spectrally selective detection are currently mainly based on silicon (range 400 nm-1100 nm) or indium gallium arsenide (InGaAs, range 700 nm-1700 nm). Photodiodes based on organic materials (e.g. bulk detectors) traditionally use a so-called donor-acceptor heterojunction to achieve detection. The spectral range to be detected is determined by the absorption properties of the donor and acceptor materials. Other photodiodes based on organic materials also use a donor-acceptor heterojunction, but the absorption occurs via a so-called "charge transfer state" (CT).In these CT detectors, the absorbing material is a donor-acceptor mixture, which provides the CT state.

[0003] In "Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption," Nat. Commun, 2017, Vol. 8, p. 15421, Siegmund, B. et al. describe an optoelectronic component comprising a donor-acceptor mixed layer as the photoactive layer, which is arranged in an optical cavity in such a way that the intermolecular CT absorption is enhanced by resonance. The CT states generated by the absorption of a suitable electromagnetic wave dissociate into free electrons and holes at donor-acceptor interfaces in the photoactive layer. The removal of the electrons or holes then initially occurs in the photoactive layer.

[0004] Andersen, TR et al., in "Scalable, ambient atmosphere roll-to-roll manufacture of encapsulated large area, flexible organic tandem solar cell modules," Energy Environ. Sci., 2014, Vol. 7, pp. 2925-2933, disclose materials and processes for polymer tandem solar cell modules produced entirely by roll-to-roll processes.

[0005] Gilot, J. et al., in “The use of ZnO as optical spacer in polymer solar cells: Theoretical and experimental study,” Appl. Phys. Lett., 2007, Vol. 91, p. 113520, describes the use of ZnO as an optical spacer between the photoactive layer and the reflective electrode in polymer solar cells.

[0006] In “Role of Polaron Pair Diffusion and Surface Losses in Organic Semiconductor Devices,” Phys. Rev. Lett., Vol. 105, 2010, p. 266602, Strobel, T. et al. describe a model for simulating polaron pairs and the associated loss factors in organic optoelectronic and photovoltaic devices.

[0007] Ko, D.-K. et al. disclose in “pin Heterojunction Solar Cells with a Colloidal Quantum-Dot Absorber Layer”, Adv. Mater., Vol. 26, 2014, pp. 4845-4850, a solar cell based on inorganic materials, namely CuI, PbSe, and ZnO, where the PbSe layer contains quantum dots and has an absorbing effect.

[0008] The present invention provides an optoelectronic component and a method for producing such an optoelectronic component according to the independent claims.

[0009] Various embodiments relate to an optoelectronic component for detecting electromagnetic radiation with high sensitivity and fine spectral resolution.

[0010] Various embodiments relate to an optoelectronic component that can be configured such that electromagnetic radiation (e.g., an electromagnetic wave, such as light) can be detected by the optoelectronic component. For example, the optoelectronic component can be configured to generate an electrical signal (e.g., a voltage, a current, such as a photocurrent, etc.) when an electromagnetic wave to be detected is incident on the optoelectronic component.

[0011] According to various embodiments, an optoelectronic component comprises: a substrate; a first electrode arranged on the substrate and having a first reflective surface; a second electrode arranged above the first electrode and having a second reflective surface, wherein the second reflective surface and the first reflective surface are configured to form an optical cavity; a first layer comprising a first material, which is arranged between the first reflective surface and the second reflective surface; a second layer comprising a second material, which is arranged between the first layer and the second reflective surface, wherein the second material is different from the first material;a third layer comprising a third material disposed between the first layer and the second layer, the third material being different from the first material and the second material;wherein the first material, the second material, and the third material are configured such that, when the optoelectronic component is irradiated by means of an electromagnetic wave, charge carriers of a first type and charge carriers of a second type are generated in the third layer by means of absorption of the electromagnetic wave in the third material, the charge carriers of the first type generated in the third layer are transferred from the third layer to the first layer, the charge carriers of the second type generated in the third layer are transferred from the third layer to the second layer, the transferred charge carriers of the first type in the first layer are transported to the first electrode, and the transferred charge carriers of the second type in the second layer are transported to the second electrode;

[0012] According to various embodiments, a method for manufacturing an optoelectronic component comprises: forming a first electrode on a substrate, which electrode has a first reflective surface; forming a second electrode above the first electrode, the second electrode having a second reflective surface, the second reflective surface and the first reflective surface being configured to form an optical cavity; forming a first layer comprising a first material, which is arranged between the first reflective surface and the second reflective surface; forming a second layer comprising a second material, which is arranged between the first layer and the second reflective surface, the second material being different from the first material;Forming a third layer comprising a third material disposed between the first layer and the second layer, the third material being different from the first material and the second material;wherein the first material, the second material, and the third material are configured such that, when the optoelectronic component is irradiated by means of an electromagnetic wave, charge carriers of a first type and charge carriers of a second type are generated in the third layer by means of absorption of the electromagnetic wave in the third material, the charge carriers of the first type generated in the third layer are transferred from the third layer to the first layer, the charge carriers of the second type generated in the third layer are transferred from the third layer to the second layer, the transferred charge carriers of the first type in the first layer are transported to the first electrode, and the transferred charge carriers of the second type in the second layer are transported to the second electrode;

[0013] Embodiments of the invention are illustrated in the figures and are explained in more detail below.

[0014] It shows Fig. 1 shows an optoelectronic component in a schematic representation, according to various embodiments; Fig. 2 shows the energy levels of the first, second and third materials in a schematic representation, according to various embodiments; Fig. 3A, Fig. 3B and Fig. 3C shows a layer arrangement in a schematic representation, according to various embodiments; Fig. 4A, Fig. 4B, Fig. 4C and Fig. 4D shows an optoelectronic component and a longitudinal mode of an electromagnetic wave, each in a schematic representation, according to various embodiments; Fig. 5 shows an optoelectronic component in a schematic representation, according to various embodiments; Fig. 6 shows an optoelectronic component in a schematic representation, according to various embodiments; and Fig. 7 shows a flow diagram of a device comprising an optoelectronic component, according to various embodiments.

[0015] Throughout this description, the terms "connected," "attached," and "coupled" are used to describe both a direct and indirect connection, a direct or indirect connection, and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals where appropriate.

[0016] In the context of this description, for the sake of brevity, the term “at least one” is used, which can mean: one, exactly one, several (e.g. exactly two, or more than two), many (e.g. exactly three or more than three), etc. The meaning of “several” does not necessarily mean that there are several identical elements, but rather essentially functionally identical elements.

[0017] At least some embodiments are described below using the example of a use of the optoelectronic component for detecting an electromagnetic wave (e.g., for detecting electromagnetic radiation). It is understood that the optoelectronic component can also be used in the same or similar manner for other suitable applications. In general, the optoelectronic component can be configured to convert an electromagnetic wave incident on the optoelectronic component into an electrical signal. For example, the optoelectronic component can be configured to generate an electrical signal (e.g., a photocurrent) in response to an electromagnetic wave incident on the optoelectronic component.

[0018] In this description, the term "to be detected" is used to describe a wavelength or an electromagnetic wave of interest. For example, a stronger electrical signal can be generated by the optoelectronic component when it is irradiated by an electromagnetic wave to be detected (e.g., an electromagnetic wave having a wavelength to be detected) than when it is irradiated by an electromagnetic wave that is not to be detected (e.g., an electromagnetic wave having a wavelength that is not to be detected). Alternatively or additionally, no electrical signal can be generated by the optoelectronic component when the optoelectronic component is irradiated by an electromagnetic wave that is not to be detected. For example, a wavelength to be detected can be in a spectral range (e.g.,from approximately 150 nm to approximately 10 µm, for example, from approximately 400 nm to approximately 2500 nm), and a wavelength not to be detected may lie outside this spectral range. For example, both a wavelength to be detected and a wavelength not to be detected may lie in the same spectral range, but an electromagnetic wave to be detected may be more strongly absorbed in an absorber material of the optoelectronic component.

[0019] In this description, the term “layer” is used to describe both a closed structure and an arbitrarily interrupted structure, which can, for example, consist of a large number of isolated parts.

[0020] Currently, there are no monolithic hybrid systems for detecting multiple spectral ranges, e.g., for detecting visible (VIS, e.g., from approximately 400 nm to approximately 700 nm) and near-infrared (NIR, e.g., from approximately 780 nm to approximately 2500 nm) light. The detection of radiation up to 1100 nm is carried out almost exclusively with silicon (Si) photodiodes, while the detection of near-infrared radiation at room temperature is predominantly carried out with InGaAs photodiodes. Both approaches cannot be combined in a miniaturized detector. While existing organic bulk or CT detectors can theoretically cover the VIS and NIR ranges, neither of them allows for separate optimization of the optical and electrical components, since electrical charge transport always also occurs on the absorbing materials. In the case of the organic bulk detector, this is the acceptor and / or donor material.In the case of the CT detector, this is the donor-acceptor mixture, which provides the CT state. In bulk and CT systems, the absorption of the radiation takes place on at least one of the two materials or at the interface via the so-called CT state. Charge carrier separation takes place at the interface between donor and acceptor, and then the charge carriers are discharged separately to the acceptor material and donor material. The absorption, charge carrier separation, and transport of the photoactive system are usually determined by the properties of the donor and acceptor materials, so these materials should be advantageously designed for all three sub-processes in order to achieve the desired high sensitivity. The optimal material proportions (e.g., mixed layer ratio or layer thicknesses) for good absorption, good charge carrier separation, and good transport are sometimes contradictory.For example, it would be possible to have only a small proportion of absorbing material in an optical cavity, so that the extinction is low and thus the width of the absorption window determined by the cavity is equally small. However, this means that only a small amount of this material is available for charge carrier transport and is therefore typically not optimal. CT absorption, for example, has very low absorption coefficients, which means that the achievable sensitivities are low and thick absorber layers should be used. Due to the thick absorber layers, higher-order light is also absorbed in the optical cavity, which can lead to unwanted signals. While bulk detectors can use materials with higher absorption coefficients, they should be incorporated in such a way that good transport properties are also ensured.This, in turn, can lead to higher-order light being absorbed, resulting in unwanted signals. Furthermore, the absorption often cannot be adjusted to the ideal level for the optical cavity, for example, to achieve very narrow detection ranges. Bulk and CT detectors therefore often incorporate additional filters that suppress unwanted signals and further narrow the spectral range. These optical filters result in high component complexity, poor miniaturization, and thus limited applicability.

[0021] An optoelectronic component, as described herein in various embodiments, can be a monolithically integrated component that can be configured to detect electromagnetic waves in the ultraviolet (UV) and / or visible and / or near-infrared and / or infrared (IR) spectral range. For example, the optoelectronic component can be configured such that the spectrally selective detection of electromagnetic waves can occur at room temperature.

[0022] Fig. 1 illustrates an optoelectronic component 100 in a schematic representation, according to various embodiments.

[0023] The detection of an electromagnetic wave by means of the optoelectronic component 100 can, for example, be achieved by means of the absorption of the electromagnetic wave (e.g., light) in a third layer 110 (e.g., an absorber layer) of the optoelectronic component 100, which can be arranged between a first layer 106 (e.g., an acceptor layer) and a second layer 108 (e.g., a donor layer). For example, the first layer 106, the second layer 108, and the third layer 110 can form a photoactive element 130 of the optoelectronic component 100.

[0024] The first layer 106 may comprise a first material (e.g., an acceptor material). The second layer 108 may comprise a second material (e.g., a donor material) that differs from the first material. The third layer 110 may comprise a third material (e.g., an absorber material) that differs from the first material and the second material.

[0025] The arrangement of the photoactive element 130 comprising the different layers 106, 108, 110, and thus the different materials, enables the separation of the generation and transport of charge carriers, which can occur when the optoelectronic component 100 is irradiated by means of an electromagnetic wave.

[0026] For example, charge carriers of a first type (e.g., electrons) and charge carriers of a second type (e.g., holes) can be generated in the third layer 110 by absorption of the electromagnetic wave in the third material when the optoelectronic component 100 is irradiated by the electromagnetic wave. Charge carrier pairs are generated in the third layer 110 by absorption of the electromagnetic wave in the third material when the optoelectronic component 100 is irradiated by the electromagnetic wave, wherein a charge carrier pair comprises one charge carrier of the first type and one charge carrier of the second type. The charge carriers of the first type can be different from the charge carriers of the second type.

[0027] For example, the third material (e.g., the atoms or molecules of the third material) may have such energy levels (e.g., energy levels in a valence band and energy levels in a conduction band) that an electron can transition from an energy level in the valence band to an energy level in the conduction band when appropriate energy is transferred to it by an incident photon, leaving a hole in the valence band.

[0028] The charge carriers of the first type generated in the third layer 110 are transferred from the third layer 110 to the first layer 106. The charge carriers of the second type generated in the third layer 110 are transferred from the third layer 110 to the second layer 108. The first material (e.g., the atoms or molecules of the first material) and the second material (e.g., the atoms or molecules of the second material) can, for example, have energy levels that can be adapted to the energy levels of the third material, so that the transfer of the generated charge carriers of the respective type can occur.

[0029] The transferred charge carriers of the first type are transported in the first layer 106. The transferred charge carriers of the first type are transported in the first layer 106 to a first electrode 104 (e.g., a cathode) of the optoelectronic component 100. The first electrode 104 can, for example, collect the charge carriers of the first type transported in the first layer 106. The transferred charge carriers of the second type are transported in the second layer 108. The transferred charge carriers of the second type are transported in the second layer 108 to a second electrode 112 (e.g., an anode) of the optoelectronic component 100. The second electrode 112 can, for example, collect the charge carriers of the second type transported in the second layer 108.

[0030] For example, the first material, the second material and the third material can be configured such that a current (e.g., a photocurrent) can be generated when the optoelectronic component 100 is irradiated by means of an electromagnetic wave.

[0031] The separation of the different functionalities in the different layers 106, 108, 110 (e.g., in the different materials) enables individual optimization of the relevant properties of the layers. The first material can be configured to transport charge carriers of the first type. The second material can be configured to transport charge carriers of the second type. The third material can be configured to generate charge carriers of the first type and the second type by absorbing an electromagnetic wave. The first material and the second material can thus be selected and optimized, for example, independently of their absorption properties, because ideally no absorption of the electromagnetic wave should occur in the first layer 106 and the second layer 108.For example, the first material and the second material may be configured such that they do not absorb an electromagnetic wave having a wavelength in a predefined spectral range (e.g., from approximately 150 nm to approximately 10 µm, for example, from approximately 400 nm to approximately 2500 nm), while the third material may be configured to absorb an electromagnetic wave having a wavelength in this spectral range. Similarly, the third material may be selected and optimized independently of its charge carrier transport properties, because no transport of charge carriers should occur in the third layer 110.

[0032] The first electrode 104 and the second electrode 112 can form an optical cavity within which the first layer 106, the second layer 108 and the third layer 110 can be arranged. The first electrode 104 can, for example, comprise a metal (e.g., aluminum, copper, titanium, gold, silver, platinum, etc.) or consist of a metal. Alternatively or additionally, the first electrode 104 can also comprise another electrically conductive material, such as an electrically conductive oxide (e.g., indium tin oxide, ITO), an electrically conductive polymer (e.g., an electrically conductive, highly reflective polymer, such as a polymer comprising a plurality of nanotubes, etc.), etc., or consist of another electrically conductive material. The first electrode 104 can, for example, comprise graphene or consist of graphene. The second electrode 112 can, for example, comprise a metal (e.g.,Aluminum, copper, titanium, gold, silver, platinum, etc.) or consist of a metal. Alternatively or additionally, the second electrode 112 can also comprise another electrically conductive material, such as an electrically conductive oxide (e.g. ITO), an electrically conductive polymer (e.g. an electrically conductive highly reflective polymer, such as a polymer comprising a plurality of nanotubes, etc.), etc., or consist of another electrically conductive material. The second electrode 112 can, for example, comprise graphene or consist of graphene.

[0033] The first electrode 104 may be arranged on a substrate 102 (e.g., a rigid substrate, a flexible substrate, etc.) of the optoelectronic component 100 and may have a first reflective (e.g., specular) surface 104a. The first reflective surface 104a may, for example, face away from the substrate 102. For example, the first electrode 104 may have a first side and a second side opposite the first side. The first side may face the substrate 102, and the second side may face away from the substrate 102. The first reflective surface 104a may be arranged on the second side of the first electrode 104.

[0034] The second electrode 112 may be arranged above the first electrode 104 and may, for example, have a second reflective surface 112a. The second reflective surface 112a may, for example, face the first reflective surface 104a. For example, the second electrode 112 may have a first side and a second side opposite the first side. The first side may, for example, face the first electrode 104, and the second side may, for example, face away from the first electrode 104. The second reflective surface 112a may, for example, be arranged on the first side of the second electrode 112.

[0035] The first reflective surface 104a and the second reflective surface 112a can be configured to form an optical cavity. The second reflective surface 112a and the first reflective surface 104a can, for example, be arranged opposite one another. The first reflective surface 104a and the second reflective surface 112a can, for example, be arranged parallel (e.g., substantially parallel) to the substrate 102. The first reflective surface 104a and the second reflective surface 112a can, for example, be arranged parallel (e.g., substantially parallel) to one another.

[0036] For example, the first reflective surface 104a and / or the second reflective surface 112a may have a reflection factor greater than 0.9 (e.g., greater than 0.95, greater than 0.99, etc.). The first reflective surface 104a and / or the second reflective surface 112a may, for example, comprise a highly reflective material (e.g., a material having a reflection factor greater than 0.95, greater than 0.99, etc.). For example, the first reflective surface 104a and / or the second reflective surface 112a may comprise a metal (e.g., gold, silver, etc.) or be made of a metal.

[0037] In one embodiment, the first reflective surface 104a and / or the second reflective surface 112a may be a dielectric mirror or configured as a dielectric mirror. The first reflective surface 104a and / or the second reflective surface 112a may, for example, consist of a plurality of layers of dielectric materials, wherein the layers may have different refractive indices and / or different thicknesses. In one embodiment, the first reflective surface 104a and / or the second reflective surface 112a may comprise a combination of a metal mirror and a dielectric mirror.The first reflective surface 104a and / or the second reflective surface 112a may, for example, consist of a plurality of layers, wherein the layers may consist of dielectric materials and / or of metal or may comprise metal, and wherein the layers may have different refractive indices and / or different thicknesses from one another.

[0038] The geometric distance between the first reflective surface 104a and the second reflective surface 112a can be from approximately 20 nm to approximately 5000 nm. For example, the geometric distance between the first reflective surface 104a and the second reflective surface 112a can be less than 1000 nm, less than 500 nm, less than 200 nm, less than 100 nm, less than 50 nm, etc. The optical length of the optical cavity can, for example, be configured such that only electromagnetic waves having specific wavelengths (e.g., a wavelength to be detected) can propagate within the optical cavity. The optical cavity can thus, for example, have the function of an optical filter.

[0039] The combination of the optical cavity formed by the first reflective surface 104a and the second reflective surface 112a with the individual optimization of the properties (e.g., absorption properties, transport properties, etc.) of the layers 106, 108, 110 (e.g., the materials of the layers 106, 108, 110) can increase the spectral selectivity of the optoelectronic component 100. The optoelectronic component 100 can thus, for example, be configured to spectrally selectively detect electromagnetic waves and can enable high spectral resolution and bandwidth. For example, the optoelectronic component 100 can ensure hyperspectral resolutions across multiple detection ranges (e.g., across multiple spectral ranges).For example, a wavelength to be detected can be selected, and the optoelectronic component 100 can be configured to generate an electrical signal only when the optoelectronic component 100 is irradiated by an electromagnetic wave having the selected wavelength. For example, the optoelectronic component 100 can be configured to generate an electrical signal even when the optoelectronic component 100 is irradiated by an electromagnetic wave having a wavelength close to the selected wavelength (e.g., in a spectral window around the wavelength to be detected) (e.g., the wavelength and the selected wavelength can differ by less than 50 nm, and / or less than 20 nm, and / or less than 10 nm, and / or less than 5 nm, etc.).

[0040] The first layer 106, the second layer 108 and the third layer 110 may be arranged between the first reflective surface 104a and the second reflective surface 112a, clearly within the optical cavity formed by the reflective surfaces 104a, 112a.

[0041] The first layer 106 may be disposed between the first reflective surface 104a and the second reflective surface 112a (e.g., above the first electrode 104). The second layer 108 may be disposed between the first layer 106 and the second reflective surface 112a (e.g., above the first layer 106). The third layer 110 may be disposed between the first layer 106 and the second layer 108.

[0042] The third layer 110 can, for example, be arranged directly on the first layer 106. Thus, the third layer 110 can be arranged in physical contact (e.g., in direct physical contact) with the first layer 106. The second layer 108 can, for example, be arranged directly on the third layer 110. Thus, the third layer 110 can be arranged in physical contact (e.g., in direct physical contact) with the second layer 108. It is understood that in this embodiment, the third material can be in physical contact with the first material, and that the third material can be in physical contact with the second material.

[0043] In one embodiment, the first layer 106 may be in physical contact (e.g., in direct physical contact) with the second layer 108. It is understood that in this embodiment, the first material may be in physical contact with the second material. For example, the first layer 106 and the second layer 108 may form an interface (e.g., a charge separation interface). Such an interface may, for example, be configured to separate charge carrier pairs (e.g., electron-hole). For example, a charge carrier of the first type may be transferred to the first layer 106 and a charge carrier of the second type may be transferred to the second layer 108 when a charge carrier pair comes to the interface between the first layer 106 and the second layer 108. For example, the first layer 106 and the second layer 108 may form a heterojunction (e.g., a donor-acceptor heterojunction).

[0044] The third layer 110 may be arranged at the interface between the first layer 106 and the second layer 108. The third layer 110 may cover the interface between the first layer 106 and the second layer 110 completely (e.g., the part covered by the third layer 110 may be 100% of the interface between the first layer 106 and the second layer 108) or at least partially (e.g., the part covered by the third layer 110 may be 5%, 10%, 50%, 75%, etc. of the interface between the first layer 106 and the second layer 108).

[0045] In one embodiment, for example, the first layer 106, the second layer 108, and the third layer 110 may be at least partially mixed with one another. The first layer 106 and the third layer 110 may, for example, be at least partially mixed with one another. The second layer 108 and the third layer 110 may, for example, be at least partially mixed with one another. It is understood that the first material, the second material, and the third material may be at least partially mixed with one another. For example, the first material and the second material may be at least partially mixed with one another and / or the first material and the third material may be at least partially mixed with one another and / or the second material and the third material may be at least partially mixed with one another.

[0046] The detection of the electromagnetic wave can be assisted, for example, by applying a voltage (e.g., a bias voltage) to the optoelectronic component 100. The applied voltage can, for example, amplify the electrical signal generated by the optoelectronic component 100 when the optoelectronic component 100 is irradiated by the electromagnetic wave.

[0047] For example, a first electrical potential may be applied to the first electrode 104 (e.g., the first electrode 104 may be coupled to a first voltage source). Alternatively or additionally, a second electrical potential may be applied to the second electrode 112 (e.g., the second electrode 112 may be coupled to a second voltage source). The first potential may be different from the second potential; for example, the second potential may be less than the first potential or greater than the first potential. The difference between the potential applied to the first electrode 104 and the potential applied to the second electrode 112 results in the applied voltage (e.g., the applied bias voltage).

[0048] It is understood that various combinations for the applied potentials are possible. For example, the first electrode 104 may be coupled to ground, and a positive or negative potential may be applied to the second electrode 112. Alternatively, the second electrode 112 may be coupled to ground, and a positive or negative potential may be applied to the first electrode 104. Alternatively, a positive or negative potential may be applied to the first electrode 104, and a positive or negative potential may be applied to the second electrode 112.

[0049] Fig. 2 illustrates the energy levels of the first material, the second material and the third material in a schematic representation, according to various embodiments.

[0050] The first material, the second material, and the third material are selected such that the energy levels of the materials enable the transfer of charge carriers from the third layer 110 to the first layer 106 and to the second layer 108 in an efficient manner, in other words, in an energetically favorable manner, as will be explained in more detail below. Fig. 2, the charge carriers of the first type are marked with a "-" and the charge carriers of the second type are marked with a "+".

[0051] The first material and the third material are configured such that charge separation of the charge carriers of the first type occurs at an interface between the first layer 106 and the third layer 110 when the optoelectronic component 100 is irradiated by the electromagnetic wave. For example, a charge carrier of the first type is transferred from the third layer 110 to the first layer 106 when a charge carrier pair generated in the third layer 110 reaches the interface between the first layer 106 and the third layer 110. The first material and the third material are also configured such that the transfer of charge carriers of the second type from the third layer 110 to the first layer 106 is prevented when a charge carrier pair generated in the third layer 110 reaches the interface between the first layer 106 and the third layer 110.For example, the first material and the third material may be configured such that the charge carriers of the second type generated in the third layer 110 are blocked (e.g., not transferred) at an interface between the first layer 106 and the third layer 110 when the optoelectronic component 100 is irradiated by means of the electromagnetic wave.

[0052] Similarly, the second material and the third material are configured such that charge separation of the charge carriers of the second type occurs at an interface between the second layer 108 and the third layer 110 when the optoelectronic component 100 is irradiated by the electromagnetic wave. For example, a charge carrier of the second type is transferred from the third layer 110 to the second layer 108 when a charge carrier pair generated in the third layer 110 reaches the interface between the second layer 108 and the third layer 110. The second material and the third material are also configured such that the transfer of charge carriers of the first type from the third layer 110 to the second layer 108 is prevented when a charge carrier pair generated in the third layer 110 reaches the interface between the second layer 108 and the third layer 110.For example, the second material and the third material may be configured such that the charge carriers of the first type generated in the third layer 110 are blocked at an interface between the second layer 108 and the third layer 110 when the optoelectronic component 100 is irradiated by means of the electromagnetic wave.

[0053] These processes can be carried out, for example, by appropriately adjusting the energy levels of the materials. For example, the first material and the third material can be selected such that the energy levels of the first material and the energy levels of the third material enable the transfer of charge carriers of the first type from the third layer 110 to the first layer 106 and prevent the transfer of charge carriers of the second type from the third layer 110 to the first layer 106. For example, it may be energetically favorable for a charge carrier of the first type to be transferred from the third layer 110 to the first layer 106, and it may be energetically unfavorable for a charge carrier of the second type to be transferred from the third layer 110 to the first layer 106.

[0054] Similarly, the second material and the third material may be selected such that the energy levels of the second material and the energy levels of the third material enable the transfer of charge carriers of the second type from the third layer 110 to the second layer 108 and prevent the transfer of charge carriers of the first type from the third layer 110 to the second layer 108. For example, it may be energetically favorable for a charge carrier of the second type to be transferred from the third layer 110 to the second layer 108 and may be energetically unfavorable for a charge carrier of the first type to be transferred from the third layer 110 to the second layer 108.

[0055] The energy levels can also be adjusted, for example, using additional materials (e.g., spacer materials), which can be used to modify the chemical structure of the first material and / or the second material and / or the third material. For example, the first material can be modified (e.g., doped) with a first spacer material. The first material modified in this way can thus, for example, be configured such that it can be energetically more favorable for a charge carrier of the first type to be transferred from the third layer 110 to the first layer 106 than if the first layer 106 comprises the unmodified first material.The first material modified in this way can thus, for example, also be configured such that it can be energetically less favorable for a charge carrier of the second type to be transferred from the third layer 110 to the first layer 106 than if the first layer 106 comprises the unmodified first material. It is understood that the first material and / or the second material and / or the third material can be modified with any suitable spacer materials, so that the energy levels of the materials can be adjusted such that the transfer of the charge carriers of the first type from the third layer 110 to the first layer 106 and / or the transfer of the charge carriers of the second type from the third layer 110 to the second layer 108 can take place.The first material and / or the second material and / or the third material can also be modified, for example, with any suitable spacer materials, so that the energy levels of the materials can be adjusted such that the transfer of the charge carriers of the second type from the third layer 110 to the first layer 106 and / or the transfer of the charge carriers of the first type from the third layer 110 to the second layer 108 can be prevented.

[0056] To provide efficient charge separation between the third layer 110 and the first layer 106, the third material has a highest occupied molecular orbital (HOMO) 220-1, which has a higher energy than the highest occupied molecular orbital (HOMO) 216-1 of the first material. The third material also has a lowest unoccupied molecular orbital (LUMO) 220-2, which has a higher energy than the lowest unoccupied molecular orbital (LUMO) 216-2 of the first material. Thus, it may be energetically favorable for a charge carrier of the first type to be transferred from the third layer 110 to the first layer 106.

[0057] To provide efficient charge separation between the third layer 110 and the second layer 108, the third material has a highest occupied molecular orbital 220-1 (HOMO), which has a lower energy than the highest occupied molecular orbital 218-1 (HOMO) of the second material. The third material also has a lowest unoccupied molecular orbital 220-2 (LUMO), which has a lower energy than the lowest unoccupied molecular orbital 218-2 (LUMO) of the second material. Thus, it may be energetically favorable for a charge carrier of the second type to be transferred from the third layer 110 to the second layer 108. It is understood that different arrangements of the HOMO-LUMO molecular orbitals are also possible.

[0058] The configuration of the third layer 110 and the properties (e.g., the absorption properties) of the third material can be selected, for example, based on the wavelength or wavelengths to be detected by the optoelectronic component 100. Optimal absorption can be provided by the choice of the third material and the thickness (e.g., layer thickness) of the third layer 110. The thickness of a layer can be viewed, for example, as the size of the layer along the direction 103.

[0059] The third material can, for example, be configured to generate charge carriers of the first type and the second type by absorbing electromagnetic waves having a wavelength (e.g., a wavelength to be detected) in a specific spectral range (e.g., in the ultraviolet spectral range and / or in the visible spectral range and / or in the near-infrared spectral range and / or in the infrared spectral range, etc.). For example, the third material can be configured to generate charge carriers of the first type and the second type by absorbing electromagnetic waves having a wavelength in a spectral range from approximately 150 nm to approximately 10 µm, for example, from approximately 400 nm to approximately 2500 nm.

[0060] In one embodiment, the first layer 106 can be transparent. For example, the first layer 106 can be configured such that the first layer 106 can transmit an electromagnetic wave (e.g., an electromagnetic wave to be detected) when the optoelectronic component 100 is irradiated by the electromagnetic wave. For example, the first layer 106 can be transparent in a desired spectral range. For example, the first layer 106 can be transparent in the ultraviolet spectral range and / or in the visible spectral range and / or in the near-infrared spectral range and / or in the infrared spectral range. For example, the first layer 106 can be transparent in a spectral range from approximately 150 nm to approximately 10 µm, for example from approximately 400 nm to approximately 2500 nm.For example, the first layer 106 can be transparent to electromagnetic waves having a wavelength in a selected spectral range, wherein the third material can be configured to generate charge carriers of the first type and the second type by absorbing electromagnetic waves having a wavelength in such a spectral range. In one embodiment, the first layer 106 can be translucent in the ultraviolet spectral range and / or in the visible spectral range and / or in the near-infrared spectral range and / or in the infrared spectral range. For example, the first layer 106 can be translucent in a spectral range from approximately 150 nm to approximately 10 µm, for example from approximately 400 nm to approximately 2500 nm.

[0061] In one embodiment, the second layer 108 can be transparent. For example, the second material can be configured such that the second layer 108 can transmit an electromagnetic wave (e.g., an electromagnetic wave to be detected) when the optoelectronic component 100 is irradiated by the electromagnetic wave. For example, the second layer 108 can be transparent in a desired spectral range. For example, the second layer 108 can be transparent in the ultraviolet spectral range and / or in the visible spectral range and / or in the near-infrared spectral range and / or in the infrared spectral range. For example, the second layer 108 can be transparent in a spectral range from approximately 150 nm to approximately 10 µm, for example from approximately 400 nm to approximately 2500 nm.For example, the second layer 108 can be transparent to electromagnetic waves having a wavelength in a selected spectral range, wherein the third material can be configured to generate charge carriers of the first type and the second type by absorbing electromagnetic waves having a wavelength in such a spectral range. In one embodiment, the second layer 108 can be translucent in the ultraviolet spectral range and / or in the visible spectral range and / or in the near-infrared spectral range and / or in the infrared spectral range. For example, the second layer 108 can be translucent in a spectral range from approximately 150 nm to approximately 10 µm, for example from approximately 400 nm to approximately 2500 nm.

[0062] For example, the third layer 110 can be configured such that charge carrier transport of the charge carriers of the first type and the second type generated in the third layer 110 is prevented in the third layer 110. For example, the third layer 110 can be configured so thin that no charge carrier transport takes place thereon.

[0063] Due to the thin layer thickness of the third layer 110 and the directly adjacent layers of first material and second material, no charge carrier transport should occur on the third material. However, optimal charge carrier separation and transport can be ensured independently of the third material by selecting the first material and the second material. The thickness of the third layer 110 can influence the spectral selectivity of the optoelectronic component 100. The thicker the third layer 110, the wider the spectral window can be around the desired wavelength of the wave to be detected (e.g., the light to be detected).

[0064] The amount of third material per area can be specified as the effective layer thickness if the density is known. The effective layer thickness corresponds to the layer thickness of a homogeneous layer that has the same mass per area as the amount of third material. The minimum absorption of the layer at the selected wavelength should be greater than 1×10 -6 (i.e., one thousandth of a thousandth of the incident electromagnetic wave is absorbed). For absorber materials that have high extinction coefficients (also known as absorption index) of k=1, the corresponding effective layer thickness is 1×10 -5 nm. This means that smaller layer thicknesses lead to a minimum absorption of less than the minimum desired 1×10 -6This minimum required layer thickness scales indirectly proportionally with the extinction coefficient of the third material used. For example, the effective layer thickness for materials with k=0.1 can be 1×10 -5 nm, for materials with k=0.01 1×10 -4 nm, etc.

[0065] For example, the third layer 110 may be thinner than 15 nm (e.g., thinner than 5 nm, thinner than 1 nm, etc.). For example, the third layer 110 may have a layer thickness of approximately 1×10 -5nm to approximately 10 nm. The third layer 110 may be thinner than the first layer 106. The first layer 106 may have a layer thickness of approximately 10 nm to approximately 500 nm (e.g., from approximately 30 nm to approximately 400 nm, from approximately 50 nm to approximately 200 nm, etc.). The third layer 110 may be thinner than the second layer 108. The second layer 108 may have a layer thickness of approximately 10 nm to approximately 500 nm (e.g., from approximately 30 nm to approximately 400 nm, from approximately 50 nm to approximately 200 nm, etc.). The third material may, for example, also be present in amounts that can typically be considered an impurity of the first material and the second material.

[0066] The third material may have a higher absorption coefficient than the first material. The third material may have a higher absorption coefficient than the second material. The third material may, for example, have an absorption index that may be 1 or greater than 1. The minimum absorption of the third layer 110 may, for example, be 1×10 -6 or even larger than 1×10 -6 be.

[0067] For example, the minimum absorption of the third material can be 1×10 -6 or even larger than 1×10 -6 be.

[0068] The absorption index of the third material can, for example, depend on the wavelength of the electromagnetic wave. For example, the third material can be configured such that the third material has a higher absorption index at the wavelength to be detected than at all other wavelengths (e.g., at the wavelengths not to be detected). For example, the third material can be configured such that electromagnetic waves having a wavelength to be detected are absorbed more strongly in the third material than electromagnetic waves having a wavelength other than the wavelength to be detected. For example, the third material can have a first absorption index for a first (e.g., to be detected) wavelength and a second absorption index for a second (e.g., not to be detected) wavelength, wherein the first absorption index is higher than the second absorption index.

[0069] Various exemplary options for selecting the materials of the first, second, and third layers 106, 108, 110 are presented below. It is understood that any other suitable materials or combinations of materials may also be selected.

[0070] The first material can be or comprise an organic material (e.g. a polymer). For example, the first material can be or comprise a naphthalenetetracarboxylic acid diimide derivative. The first material can comprise an inorganic material (e.g. an inorganic semiconductor material). In one embodiment, the first material can be or comprise a compound (e.g. an organic compound, such as a polymeric compound, an inorganic compound, etc.). For example, the first material can be or comprise a compound of at least one organic material and at least one inorganic material. The first material can be doped (e.g. n-doped), for example. The first material can be or comprise at least one material from the following list of materials or a compound of two or more materials from the following list of materials: BPhen:Cs; BCP:Yb; Alq3; NTCDA; Me-NTCDI; HATNA-Cl6.

[0071] The second material can be or comprise an organic material (e.g. a polymer). For example, the second material can be or comprise an amine. For example, the second material can be or comprise a carboxylic acid derivative. The second material can comprise an inorganic material (e.g. an inorganic semiconductor material). In one embodiment, the second material can be or comprise a compound (e.g. an organic compound, such as a polymeric compound, an inorganic compound, etc.). For example, the second material can be or comprise a compound of at least one organic material and at least one inorganic material. The second material can be doped (e.g. p-doped), for example. The second material can be or comprise at least one material from the following list of materials or a compound of two or more materials from the following list of materials.have: BF-DPB; a-NPB; BPAPF; 1-TNATA; 2-TNATA; 4P-TPD; Di-NPD; m-MTDATA; MeO-TPD; PV-TPD; Spiro-MeO-TPD; Spiro-TAD; Spiro-TTB; TAPC.

[0072] The third material can be or comprise an organic material (e.g., a polymer). For example, the third material can be or comprise graphene. The third material can comprise an inorganic material (e.g., an inorganic semiconductor material). In one embodiment, the third material can be or comprise, for example, a compound (e.g., an organic compound, such as a polymeric compound, an inorganic compound, etc.). For example, the third material can be or comprise a compound of at least one organic material and at least one inorganic material.

[0073] The third material may be or comprise at least one material from the following list of materials or a combination of two or more materials from the following list of materials: ZnPc; F4ZnPc; F8ZnPc; CuPc; F16CuPc; CuNC; SnOPC; SnNCCl2; C70; C60; DCV2-3T; DCV2-5T; DCV2-6T; DIP; Pentacene; Me-PTCDI; SubNc; Cl6SubPc; DPP(TBFu)2; DTDCTB; HB194; TPDCDTS; TBDI; 3,6-DTNFMN; BDT2TH; PhO-BsubPc; F8TBT; Si-OMeTPA; IDIC; DTT-8.

[0074] For example, the following combinations of materials can be used to form the layers 106, 108, 110 (the combinations describe possible materials for the first layer 106 / the third layer 110 / the second layer 108): HATNA-CI6 / DCV2-5T / BF-DPB; HATNA-CI6 / ZnPC / BF-DPB; HATNA-CI6 / C60 / a-NPB; HATNA-CI6 / C60 / BPAPF; NTCDA / DCV2-5T / BF-DPB; NTCDA / ZnPC / BF-DPB; NTCDA / C60 / a-NPB; NTCDA / C60 / BPAPF. These combinations of materials can enable the charge carriers of the first type and the charge carriers of the second type to be generated and transported in an efficient manner (e.g., in an energetically favorable manner). It is understood that other possible combinations may be used in the same or similar manner.

[0075] As in Fig. 2, the combination of the first, second and third materials can be selected such that efficient charge separation can be enabled.

[0076] Fig. 3A, Fig. 3B and Fig. 3C illustrate a layer arrangement in a schematic representation, according to various embodiments, wherein Fig. 3A is an exemplary representation of the prior art.

[0077] The Fig. 3A to Fig. The configurations of the third layer 110 shown in Figure 3C are selected as examples. It is understood that other possible configurations of the third layer 110 can be used in the same or similar manner.

[0078] The third layer 110 may be a closed layer or arranged as a closed layer, as for example in Fig. 3A. The third layer 110 may, for example, be arranged such that it uniformly covers the interface between the first layer 106 and the second layer 108.

[0079] According to the invention, the third layer 110 is a non-closed layer or is arranged as a non-closed layer, as for example in Fig. 3B. Illustratively, the third layer 110 has at least one gap (e.g., a plurality of gaps). For example, the third layer 110 can consist of a plurality of isolated parts (e.g., islands). In this embodiment, the isolated parts can be homogeneously distributed or inhomogeneously distributed. For example, the third layer 110 can have a homogeneous distribution of islands or an inhomogeneous distribution of islands (of the same or different size and / or shape).

[0080] For example, the third layer 110 may consist of at least one two-dimensional structure (e.g., a monolayer, such as a graphene monolayer). For example, the third layer 110 may consist of a plurality of two-dimensional structures (e.g., a plurality of monolayers arranged one above the other).

[0081] Alternatively or additionally, the third layer 110 may consist of at least one one-dimensional structure (e.g., a nanoparticle, such as a metal nanoparticle, a nanotube, a nanofiber, a nanorod, etc.). In one embodiment, the third layer 110 may consist of a plurality of one-dimensional structures (e.g., a plurality of nanoparticles, such as metal nanoparticles, a plurality of nanotubes, a plurality of nanofibers, a plurality of nanorods, etc.), as described, for example, in Fig. 3C. The one-dimensional structures of the plurality of one-dimensional structures can, for example, be arranged in an ordered manner (e.g., a symmetric array of one-dimensional structures, a symmetric matrix of one-dimensional structures, etc.) or in a disordered manner in the third layer 110.

[0082] In one embodiment, for example, the first layer 106 and the second layer 108 may be at least partially mixed with each other and the third layer 110 may consist of a plurality of one-dimensional structures which may be dispersed in the resulting mixed layer.

[0083] In one embodiment, the third layer 110 can consist of at least one quantum dot structure (e.g., a colloidal quantum dot structure, such as a colloidal PbS quantum dot structure). The at least one quantum dot structure can, for example, comprise a sulfide (e.g., PbS (lead(II) sulfide)). The third layer 110 can also consist of a plurality of quantum dot structures, for example. For example, colloidal quantum dot structures made of PbS (lead(II) sulfide) with a diameter of a few nanometers can be used for their absorption (which can be adjusted by the diameter) for detection in the visible and near-infrared spectral range. The quantum dot structures can, for example, be arranged in the third layer 110 in an ordered manner (e.g., a symmetrical array of quantum dot structures, a symmetrical matrix of quantum dot structures, etc.) or in a disordered manner.

[0084] For example, a molar area density can be used (e.g. as mol / cm 2 or as number of molecules / cm 2 ) to determine a minimum amount of the third material. For example, the third layer 110 may be at least 1×10 9 molecules / cm 2 of the third material or 2.4·10 -15 mol / cm 2 of the third material. This minimum required amount scales inversely proportional to the extinction coefficient of the third material used.

[0085] At least one additional element (e.g., a nanoparticle, etc.), which may comprise a fourth material (e.g., a metal), may be or become arranged (e.g., dispersed) in the third layer 110. The at least one additional element may, for example, be configured to increase the absorption of the electromagnetic wave in the third material through optical near-field amplification. In one embodiment, a plurality of additional elements (e.g., a plurality of nanoparticles, etc.), which may comprise the fourth material, may be or become arranged in the third layer 110.

[0086] Fig. 4A, Fig. 4B, Fig. 4C and Fig. 4D illustrate an optoelectronic component 100 and a longitudinal mode of an electromagnetic wave in a respective schematic representation, according to various embodiments.

[0087] For the sake of clarity, only the third layer 110 is shown in the Fig. 4A to Fig. 4D. It is understood that the other components of the optoelectronic device 100 (e.g., the first layer 106, the second layer 108, etc.) may also be present. The Fig. 4A to Fig. The placements of the third layer 110 shown in Figure 4D are selected as examples. It is understood that other possible placements of the third layer 110 can be used in the same or similar manner.

[0088] The first reflective surface 104a and the second reflective surface 112a may be configured such that one or more longitudinal modes of the electromagnetic wave are generated between the first reflective surface 104a and the second reflective surface 112a when the optoelectronic component 100 is irradiated by the electromagnetic wave.

[0089] Within the optical cavity formed by the first reflective surface 104a and the second reflective surface 112a, only standing waves can be present, for which the optical length of the optical cavity is an integer multiple of half the wavelength of the waves. Waves having other wavelengths will be eliminated due to destructive interference. The optical length (e.g., optical path length) can be seen as the geometric length of the path traversed by the electromagnetic wave, multiplied by the respective refractive indices of the media traversed. For example, the optical length of the optical cavity formed by the first reflective surface 104a and the second reflective surface 112a can be defined as the thickness of the layers arranged within the cavity (e.g.,the first layer 106, the second layer 108 and the third layer 110) multiplied by the respective refractive indices of the layers 106, 108, 110.

[0090] The longitudinal modes correspond to the wavelength (or frequencies) of an electromagnetic wave allowed within the cavity. It is understood that a plurality of longitudinal modes for an electromagnetic wave can be present within the optical cavity, whereby the longitudinal modes can be of different orders (e.g., first order, second order, third order, etc.) corresponding to different wavelengths of the electromagnetic wave (e.g., one fundamental wavelength, one-half of the fundamental wavelength, one-third of the fundamental wavelength, etc.).

[0091] The longitudinal modes of the electromagnetic wave may have nodes axially along the length of the optical cavity (e.g., along direction 103). The various longitudinal modes of the electromagnetic wave may, for example, have maxima (e.g., one optical field maximum, a plurality of optical field maxima) and minima (e.g., one optical field minimum, a plurality of optical field minima) located at different positions within the optical cavity.

[0092] The third layer 110 is configured such that it is located at a maximum of a longitudinal mode (e.g., a first-order longitudinal mode, or a longitudinal mode of an order higher than the first order) of the electromagnetic wave when the optoelectronic component 100 is irradiated by the electromagnetic wave. In this embodiment, an electromagnetic wave (e.g., an electromagnetic wave to be detected) having a wavelength associated with this longitudinal mode can be absorbed more strongly in the third material (e.g., in the third layer 110) than electromagnetic waves having wavelengths not associated with this longitudinal mode. Clearly, the associated electrical signal can be amplified.

[0093] For example, the first layer 106 and the second layer 108 may be configured such that a maximum of a longitudinal mode of the electromagnetic wave (e.g., a longitudinal mode of the first order, or a longitudinal mode of an order higher than the first order) is located between the first layer 106 and the second layer 108 when the optoelectronic component 100 is irradiated by means of the electromagnetic wave.

[0094] Fig. 4A, Fig. 4C and Fig. 4D show, for example, that the third layer 110 is configured such that it is located in the maximum of the first-order longitudinal mode and / or in a maximum of the second-order longitudinal mode and / or in a maximum of the third-order longitudinal mode.

[0095] The other wavelengths, which are assigned to other longitudinal modes (e.g., longitudinal modes of other orders), are absorbed more weakly in the third material (e.g., in the third layer 110). For example, the third layer 110 can be configured such that it is located at a minimum (e.g., at a node) of a longitudinal mode (e.g., a first-order longitudinal mode, or a longitudinal mode of an order higher than the first order) of an electromagnetic wave. Clearly, the associated electrical signals can be masked out. For example, the third layer 110 can be placed arbitrarily within the optical cavity, whereby signals from unwanted orders can be easily masked out.

[0096] Fig. For example, Figure 4B shows that the third layer 110 may be configured to be located at the minimum of the second-order longitudinal mode.

[0097] For example, the third layer 110 can be configured such that it is located in a maximum of a first longitudinal mode (e.g. a longitudinal mode of the first order, or a longitudinal mode of an order which is higher than the first order) of the electromagnetic wave, and that it is located in a minimum of a second longitudinal mode (e.g. a longitudinal mode of the first order, or a longitudinal mode of an order which is higher than the first order) of the electromagnetic wave when the optoelectronic component 100 is irradiated by means of the electromagnetic wave, wherein the order of the first longitudinal mode differs from the order of the second longitudinal mode. Fig. 4A and Fig. 4B show, for example, that the third layer 110 can be configured to be located at the maximum of the first-order longitudinal mode and at the minimum of the second-order longitudinal mode.

[0098] The placement of the third layer 110 can thus also have the effect of an optical filter, in which the electromagnetic waves having a wavelength to be detected can be strongly absorbed in the third material (e.g., in the third layer 110), so that the electrical signal generated by the optoelectronic component 100 can be amplified. For example, the electromagnetic waves having a different (e.g., undetectable) wavelength can be absorbed more weakly in the third material (e.g., in the third layer 110), so that the electrical signal generated by the optoelectronic component 100 can be masked out.

[0099] For example, an external quantum efficiency (EQE) of the optoelectronic device 100 can be selected for different wavelengths by means of the placement of the third layer 110 and / or by means of the selection of the properties of the third layer 110 (e.g., the selection of the layer thickness of the third layer 110, the selection of the third material, etc.).

[0100] Fig. 5 illustrates an optoelectronic component 100 in a schematic representation, according to various embodiments.

[0101] The optoelectronic component 100 may further comprise a first transport layer 524 (e.g., an electron transport layer), which may be arranged between the first reflective surface 104a (e.g., the first electrode 104) and the first layer 106. The first transport layer 524 may, for example, be configured such that, when the optoelectronic component 100 is irradiated by the electromagnetic wave, the charge carriers of the first type transported in the first layer 106 can be transferred from the first layer 106 to the first transport layer 524. For example, the charge carriers of the first type transferred in the first transport layer 524 may be transported in the first transport layer 524 to the first electrode 104.

[0102] The optoelectronic component 100 may further comprise a second transport layer 526 (e.g., a hole transport layer), which may be arranged between the second reflective surface 112a (e.g., the second electrode 112) and the second layer 108. The second transport layer 526 may, for example, be configured such that, when the optoelectronic component 100 is irradiated by the electromagnetic wave, the charge carriers of the second type transported in the second layer 108 can be transferred from the second layer 108 to the second transport layer 526. For example, the charge carriers of the second type transferred in the second transport layer 526 may be transported in the second transport layer 526 to the second electrode 112.

[0103] The first transport layer 524 and the second transport layer 526 can facilitate the transport of charge carriers to the electrodes 104, 112. For example, the first transport layer 524 can be configured such that the charge carriers of the first type can be transported faster in the first transport layer 524 than in the first layer 106. For example, the second transport layer 526 can be configured such that the charge carriers of the second type can be transported faster in the second transport layer 526 than in the second layer 108.

[0104] In one embodiment, the first transport layer 524 may, for example, be doped (e.g., n-doped). For example, the second transport layer 526 may be doped (e.g., p-doped). The doping of the first transport layer 524 and / or the second transport layer 526 may, for example, further facilitate the transport of charge carriers to the electrodes 104, 112.

[0105] In one embodiment, for example, the first transport layer 524 can further be configured such that charge carriers of the second type can be blocked at an interface between the first layer 106 and the first transport layer 524. For example, the first transport layer 524 can be configured such that the transfer of charge carriers of the second type from the first layer 106 to the first transport layer 524 can be prevented. For example, the second transport layer 526 can further be configured such that charge carriers of the first type can be blocked at an interface between the second layer 108 and the second transport layer 526. For example, the second transport layer 526 can be configured such that the transfer of charge carriers of the first type from the second layer 108 to the second transport layer 526 can be prevented.The transport layers can therefore also act as block layers (e.g. hole block layer and / or electron block layer).

[0106] For example, the optoelectronic component 100 may have an encapsulation 528, which may be arranged over the second electrode 112. The encapsulation 528 may, for example, at least partially cover the second electrode 112. In one embodiment, the encapsulation 528 may, for example, at least partially encapsulate the optoelectronic component 100. For example, the encapsulation 528 may be configured such that the various components of the optoelectronic component 100 can be at least partially covered by the encapsulation 528.

[0107] The optoelectronic component 100 can, for example, be configured such that it generates an electrical signal when the optoelectronic component 100 is irradiated by means of the electromagnetic wave through the substrate 102 and / or through the encapsulation 528. The optoelectronic component 100 can thus be irradiated through its lower side (e.g., through the substrate 102) and / or through its upper side (e.g., through the encapsulation 528).

[0108] The substrate 102 may be transparent. For example, the substrate 102 may be transparent in the ultraviolet spectral range and / or in the visible spectral range and / or in the near-infrared spectral range and / or in the infrared spectral range. For example, the substrate 102 may be transparent in a spectral range from approximately 150 nm to approximately 10 µm (for example, from approximately 400 nm to approximately 2500 nm). For example, the substrate 102 may be configured such that the electromagnetic wave incident on the optoelectronic component 100 can pass through the substrate 102 without being scattered by the substrate 102. For example, the substrate 102 may be configured such that the substrate 102 can transmit an electromagnetic wave when the optoelectronic component 100 is irradiated by the electromagnetic wave through the substrate 102.For example, the substrate 102 can be configured such that the electromagnetic wave is absorbed in the third material (e.g., in the third layer 110) when the optoelectronic component 100 is irradiated by the electromagnetic wave through the substrate 102. In one embodiment, the substrate 102 can be translucent in the ultraviolet spectral range and / or in the visible spectral range and / or in the near-infrared spectral range and / or in the infrared spectral range. For example, the substrate 102 can be translucent in a spectral range from approximately 150 nm to approximately 10 µm (e.g., from approximately 400 nm to approximately 2500 nm).

[0109] The substrate 102 may comprise a non-electrically conductive material (e.g., glass, plastic, etc.). For example, the substrate 102 may comprise a polymer (e.g., polyethylene terephthalate, polymethyl methacrylate, polystyrene, etc.). Alternatively or additionally, the substrate 102 may comprise, for example, an electrically conductive material (e.g., a metal oxide, a metal such as aluminum, copper, gold, etc.). For example, the substrate 102 may comprise a semiconductor material (e.g., silicon).

[0110] The encapsulation 528 may be transparent. For example, the encapsulation 528 may be transparent in the ultraviolet spectral range and / or in the visible spectral range and / or in the near-infrared spectral range and / or in the infrared spectral range. For example, the encapsulation 528 may be transparent in a spectral range from approximately 150 nm to approximately 10 µm (for example, from approximately 400 nm to approximately 2500 nm). For example, the encapsulation 528 may be configured such that the electromagnetic wave incident on the optoelectronic component 100 can pass through the encapsulation 528 without being scattered by the encapsulation 528. For example, the encapsulation 528 may be configured such that the encapsulation 528 can allow an electromagnetic wave to pass through when the optoelectronic component 100 is irradiated by the electromagnetic wave through the encapsulation 528.For example, the encapsulation 528 can be configured such that the electromagnetic wave is absorbed in the third material (e.g., in the third layer 110) when the optoelectronic component 100 is irradiated by the electromagnetic wave through the encapsulation 528. In one embodiment, the encapsulation 528 can be translucent in the ultraviolet spectral range and / or in the visible spectral range and / or in the near-infrared spectral range and / or in the infrared spectral range. For example, the encapsulation 528 can be translucent in a spectral range from approximately 150 nm to approximately 10 µm (e.g., from approximately 400 nm to approximately 2500 nm).

[0111] The encapsulation 528 may comprise a non-electrically conductive material (e.g., glass, plastic, etc.). For example, the encapsulation 528 may comprise a polymer (e.g., polyethylene terephthalate, polymethyl methacrylate, polystyrene, etc.).

[0112] The substrate 102 can serve as a filter (e.g., as an optical filter). For example, the substrate 102 can be configured such that electromagnetic waves can be blocked by means of the substrate 102 when the optoelectronic component 100 is irradiated through the substrate 102. For example, the substrate 102 can be configured such that electromagnetic waves having a wavelength not to be detected can be blocked by means of the substrate 102 and / or only electromagnetic waves having a wavelength to be detected can pass through the substrate 102. For example, the substrate 102 can have a first transmission coefficient for a first wavelength (e.g., a wavelength to be detected) and a second transmission coefficient for a second wavelength (e.g., a wavelength not to be detected). For example, the first transmission coefficient can be higher than the second transmission coefficient.

[0113] Alternatively or additionally, filter layers can be arranged in the optoelectronic component 100. For example, filter layers can be arranged on the lower side of the optoelectronic component 100. In one embodiment, for example, a first filter layer can be arranged above a first side of the substrate 102 (e.g., the first side of the substrate 102 can face away from the first electrode 104) and / or a second filter layer can be arranged above a second side of the substrate 102 (e.g., between the substrate 102 and the first electrode 104). The first filter layer and / or the second filter layer can be configured, for example, such that electromagnetic waves can be blocked by means of the first filter layer and / or by means of the second filter layer when the optoelectronic component 100 is irradiated through the substrate 102.For example, the first filter layer and the second filter layer can be configured such that electromagnetic waves having a wavelength that is not to be detected can be blocked by means of the first filter layer and / or by means of the second filter layer and / or only electromagnetic waves having a wavelength that is to be detected can pass through the first filter layer and / or the second filter layer.

[0114] The encapsulation 528 can serve as a filter (e.g., as an optical filter). For example, the encapsulation 528 can be configured such that electromagnetic waves can be blocked by means of the encapsulation 528 when the optoelectronic component 100 is irradiated through the encapsulation 528. For example, the encapsulation 528 can be configured such that electromagnetic waves having a wavelength not to be detected can be blocked by means of the encapsulation 528 and / or only electromagnetic waves having a wavelength to be detected can pass through the encapsulation 528. For example, the encapsulation 528 can have a first transmission coefficient for a first wavelength (e.g., a wavelength to be detected) and a second transmission coefficient for a second wavelength (e.g., a wavelength not to be detected).For example, the first transmission coefficient may be higher than the second transmission coefficient.

[0115] Alternatively or additionally, filter layers can be arranged on the upper side of the optoelectronic component 100. In one embodiment, for example, a third filter layer can be arranged above a first side of the encapsulation 528 (e.g., the first side of the encapsulation 528 can face away from the second electrode 112) and / or a fourth filter layer can be arranged above a second side of the encapsulation 528 (e.g., between the encapsulation 528 and the second electrode 112). The third and / or fourth filter layer can be configured, for example, such that electromagnetic waves can be blocked by means of the third and / or fourth filter layer when the optoelectronic component 100 is irradiated through the encapsulation 528.For example, the third and fourth filter layers can be configured such that electromagnetic waves having a wavelength that is not to be detected can be blocked by means of the third and / or the fourth filter layer and / or only electromagnetic waves having a wavelength that is to be detected can pass through the third and / or the fourth filter layer.

[0116] The first electrode 104 and / or the second electrode 112 may be transparent (e.g., at least semi-transparent) in the spectral range of the wavelength to be detected. For example, the first electrode 104 and / or the second electrode 112 may be transparent (e.g., at least semi-transparent) in the ultraviolet spectral range and / or in the visible spectral range and / or in the near-infrared spectral range and / or in the infrared spectral range. For example, the first electrode 104 and / or the second electrode 112 may be transparent (e.g., at least semi-transparent) in a spectral range from approximately 150 nm to approximately 10 µm (e.g., from approximately 400 nm to approximately 2500 nm).For example, the first electrode 104 and / or the second electrode 112 can be configured such that the electromagnetic wave incident on the optoelectronic component 100 can pass through the first electrode 104 and / or the second electrode 112 without being scattered by the first electrode 104 and / or the second electrode 112. For example, the first electrode 104 and / or the second electrode 112 can be configured such that the first electrode 104 and / or the second electrode 112 can allow an electromagnetic wave to pass through when the optoelectronic component 100 is irradiated by the electromagnetic wave. In one embodiment, the first electrode 104 and / or the second electrode 112 may be translucent in the ultraviolet spectral range and / or in the visible spectral range and / or in the near-infrared spectral range and / or in the infrared spectral range.For example, the first electrode 104 and / or the second electrode 112 may be translucent in a spectral range from about 150 nm to about 10 µm (e.g., from about 400 nm to about 2500 nm).

[0117] The optoelectronic component 100 may be coupled (e.g., electrically connected) to a device that may be configured to generate a signal (e.g., an analog signal, a digital signal, etc.) based on the electrical signal generated by the optoelectronic component 100 (e.g., the generated electrical current, the generated voltage, etc.) when the optoelectronic component 100 is irradiated by means of the electromagnetic wave.

[0118] For example, the first electrode 104 and / or the second electrode 112 may be coupled (e.g., electrically connected) to a device that may be configured to generate a signal based on the electrical signal generated by the optoelectronic component 100 (e.g., the generated electrical current, the generated voltage, etc.) when the optoelectronic component 100 is irradiated by means of the electromagnetic wave.

[0119] This device may, for example, be an ammeter, a voltmeter, and / or any other suitable device for generating a signal in response to the electrical signal generated by the optoelectronic component 100 when the optoelectronic component 100 is irradiated by means of the electromagnetic wave.

[0120] Alternatively or additionally, the first electrode 104 and / or the second electrode 112 may be coupled (e.g., electrically connected) to a load and / or to any other suitable electronic element to which the electrical current generated by the optoelectronic component 100 and / or the voltage generated by the optoelectronic component 100 may be applied.

[0121] Fig. 6 illustrates an optoelectronic component 100 in a schematic representation, according to various embodiments.

[0122] The optoelectronic component 100 may include an additional photoactive element 632, which may be arranged above and / or below the photoactive element 130. In other words, the photoactive element 130 and the additional photoactive element 632 may be arranged one above the other. The additional photoactive element 632 may have the same or similar features as the photoactive element 130.

[0123] The additional photoactive element 632 may, for example, comprise a first layer 106-2, a second layer 108-2, and a third layer 110-2.

[0124] For example, a third electrical potential may be applied to the first layer 106-2 of the additional photoactive element 632 (e.g., the first layer 106-2 of the additional photoactive element 632 may be coupled to a third voltage source). The third potential may, for example, differ from the first potential and / or the second potential and may, for example, be used to amplify the electrical signal generated by the optoelectronic component 100.

[0125] The thickness of the photoactive element 130 may differ from the thickness of the additional photoactive element 632. For example, the thickness of the third layer 110 of the photoactive element 130 may differ from the thickness of the third layer 110-2 of the additional photoactive element 632.

[0126] The third layer 110 of the photoactive element 130 may comprise a third material that differs from the material of the third layer 110-2 of the additional photoactive element 632.

[0127] The third layer 110 of the photoactive element 130 can thus be configured such that charge carriers of the first type and of the second type are generated in the third material of the third layer 110 by absorbing a first electromagnetic wave having a first wavelength to be detected when the optoelectronic component 100 is irradiated by the first electromagnetic wave. The third layer 110-2 of the additional photoactive element 632 can be configured such that charge carriers of the first type and of the second type are generated in the third material of the third layer 110-2 by absorbing a second electromagnetic wave having a second wavelength to be detected when the optoelectronic component 100 is irradiated by the second electromagnetic wave. The first wavelength to be detected can be different from the second wavelength to be detected.

[0128] In one embodiment, the thickness of the photoactive element 130 and the thickness of the additional photoactive element 632 may be the same. For example, the thickness of the third layer 110 of the photoactive element 130 and the thickness of the third layer 110-2 of the additional photoactive element 632 may be the same. For example, the third layer 110 of the photoactive element 130 and the third layer 110-2 of the additional photoactive element 632 may comprise the same third material. In this embodiment, charge carriers can thus be generated in the third layer 110 of the photoactive element 130 and in the third layer 110-2 of the additional photoactive element 632 in response to the same electromagnetic wave, so that a stronger electrical signal can be generated for this electromagnetic wave.

[0129] The optoelectronic component 100 may, for example, comprise an intermediate layer 634 arranged between the photoactive element 130 and the additional photoactive element 632. For example, the intermediate layer 634 may be in physical contact (e.g., in direct physical contact) with the second layer 108 of the photoactive element 130 and with the first layer 106-2 of the additional photoactive element 632. It is understood that other suitable arrangements may also be selected.

[0130] The intermediate layer 634 may be a charge recombination layer (also referred to as a charge conversion layer) or may be configured as a charge recombination layer. For example, the intermediate layer 634 may be configured such that charge carriers of the first type and charge carriers of the second type can recombine with each other in the intermediate layer 634.

[0131] The optoelectronic component 100 may further comprise a third electrode, which may be arranged between the photoactive element 130 and the additional photoactive element 632. The third electrode may, for example, comprise a third reflective surface and a fourth reflective surface. For example, the third reflective surface may face the first reflective surface 104a, and the fourth reflective surface may face the second reflective surface 112a. For example, the third reflective surface and the first reflective surface 104a may be configured such that they form a first optical cavity. For example, the fourth reflective surface and the second reflective surface 112a may be configured such that they form a second optical cavity. Illustratively, the photoactive element 130 may be arranged within the first optical cavity (e.g.between the first reflective surface 104a and the third reflective surface), and the additional photoactive element 632 can be arranged within the second optical cavity (e.g., between the second reflective surface 112a and the fourth reflective surface). The third electrode can be arranged, for example, instead of the intermediate layer 634.

[0132] The optical length of the first optical cavity may differ from the optical length of the second optical cavity. For example, the geometric distance between the first reflective surface 104a and the third reflective surface may differ from the geometric distance between the second reflective surface 112a and the fourth reflective surface.

[0133] For example, the third layer 110 of the photoactive element 130 can be configured such that it is located in a maximum of a first longitudinal mode (e.g., a longitudinal mode of the first order, or a longitudinal mode of an order higher than the first order) of a first electromagnetic wave when the optoelectronic component 100 is irradiated by the first electromagnetic wave. For example, the first longitudinal mode can be generated between the first reflective surface 104a and the third reflective surface. For example, the third layer 110-2 of the additional photoactive element 632 can be configured such that it is located in a maximum of a second longitudinal mode (e.g.,a longitudinal mode of the first order, or a longitudinal mode of an order higher than the first order) of a second electromagnetic wave when the optoelectronic component 100 is irradiated by the second electromagnetic wave. For example, the second longitudinal mode can be generated between the second reflective surface 112a and the fourth reflective surface.

[0134] The optoelectronic component 100 can thus be configured to detect a plurality of wavelengths, and the properties of the optical cavities and the third layers 110, 110-2 can be selected and optimized based on the wavelengths to be detected.

[0135] It is understood that the optoelectronic component 100 may also have more than two photoactive elements 130, 632.

[0136] The optoelectronic component 100 can be configured as a photodiode.

[0137] An optoelectronic component structure can comprise a plurality of optoelectronic components 100. For example, the optoelectronic components 100 of the plurality of optoelectronic components 100 can be arranged in a matrix arrangement. The optoelectronic component structure can be configured, for example, as a photodiode.

[0138] Fig. 7 illustrates a flowchart of a detection system 700, which may include an optoelectronic device 100 according to various embodiments.

[0139] The detection system 700 can be used, for example, to convert radiation (e.g., electromagnetic radiation, such as an electromagnetic wave) into a readable signal (e.g., an analog signal, a digital signal). The detection system 700 can, for example, be a spectrophotometer (e.g., a microspectrometer) and / or a camera (e.g., a hyperspectral camera). For example, the detection system 700 can enable qualitative and quantitative determination of, for example, ingredients of food, materials, and liquids.

[0140] The detection system 700 may, for example, comprise at least one optical element 702 (e.g., at least one lens, such as an objective lens, etc.), which may be configured to direct an electromagnetic wave incident on the detection system 700 onto at least one sensor element 704 of the detection system 700. The at least one sensor element 704 may, for example, be configured to generate an electrical signal in response to the electromagnetic wave. The at least one sensor element 704 may, for example, be an optoelectronic component 100 according to one of the embodiments. The optoelectronic component 100 may, for example, be a part of the at least one sensor element 704. It is understood that a plurality of optoelectronic components 100 may also be used as sensor elements 704 of the detection system 700.

[0141] The at least one sensor element 704 can, for example, be communicatively coupled to at least one processor 706 of the detection system 700. The at least one processor 706 can, for example, be configured to process the electrical signal generated by the at least one sensor element 704 and provide corresponding signal information. The detection system 700 can, for example, comprise any suitable processor type, e.g., at least one single-core processor, at least one dual-core processor, at least one SoC (System on a Chip), at least one microcontroller, etc.

[0142] Furthermore, the detection system 700 may include at least one memory 708, e.g., volatile memory, non-volatile memory, etc. The at least one processor 706 may, for example, be communicatively coupled to the at least one memory 708. The at least one memory 708 may, for example, be configured to store the signal information provided by the at least one processor 706.

[0143] The detection system 700 may include at least one display 710, which may be configured to display signal information in a corresponding graphical representation. For example, the at least one display 710 may be communicatively coupled to the at least one processor 706 and / or to the at least one memory 708 and configured to display signal information provided by the processor 706 and / or to display the signal information stored in the at least one memory 708.

[0144] The various components of the detection system 700 can be coupled to one another, for example, by means of a bus and / or by means of any suitable connection for transmitting electrical signals.

[0145] A method for manufacturing an optoelectronic component 100 may include: forming a first electrode 104 on a substrate 102, which may include a first reflective surface 104a; forming a second electrode 112 over the first electrode 104, wherein the second electrode 112 may include a second reflective surface 112a, wherein the first reflective surface 104a and the second reflective surface 112a may be configured to form an optical cavity; and forming a photoactive element 130 between the first reflective surface 104a and the second reflective surface 112a, wherein the photoactive element 130 may be formed from multiple (e.g., three) materials.

[0146] The formation of the first electrode 104 and / or the second electrode 112 may be performed using deposition techniques (e.g., metal deposition techniques).

[0147] In one embodiment, forming the first electrode 104 may include forming a first reflective surface 104a of the first electrode 104. Forming the first reflective surface 104a may, for example, include depositing a plurality of layers of dielectric materials and / or depositing a plurality of layers of dielectric materials and / or metal.

[0148] In one embodiment, forming the second electrode 112 may include forming a second reflective surface 112a of the second electrode 112. Forming the second reflective surface 112a may, for example, include depositing a plurality of layers of dielectric materials and / or depositing a plurality of layers of dielectric materials and / or metal.

[0149] Forming the photoactive element 130 may include forming a first layer 106 comprising a first material, which may be disposed between the first reflective surface 104a and the second reflective surface 112a; forming a second layer 108 comprising a second material, which may be disposed between the first layer 106 and the second reflective surface 112a, wherein the second material is different from the first material; forming a third layer 110 comprising a third material, which may be disposed between the first layer 106 and the second layer 108, wherein the third material is different from the first material and the second material.

[0150] The first material, the second material, and the third material can be configured such that, when the optoelectronic component 100 is irradiated by means of an electromagnetic wave, charge carriers of a first type and charge carriers of a second type can be generated in the third layer 110 by means of absorption of the electromagnetic wave in the third material, the charge carriers of the first type generated in the third layer 110 can be transferred from the third layer 110 to the first layer 106, the charge carriers of the second type generated in the third layer 110 can be transferred from the third layer 110 to the second layer 108, the transferred charge carriers of the first type in the first layer 106 can be transported to the first electrode 104, and the transferred charge carriers of the second type in the second layer 108 can be transported to the second electrode 112.

[0151] The first layer 106 and / or the second layer 108 and / or the third layer 110 may be formed by a deposition process (e.g., physical vapor deposition such as vacuum sublimation, chemical vapor deposition, spray deposition, etc.). The first layer 106 and / or the second layer 108 may also be deposited, for example, in the liquid phase.

[0152] However, the first layer 106 and / or the second layer 108 and / or the third layer 110 can also be formed by means of a coating process (e.g., slot die coating, spin coating, dip coating, doctor blade coating, etc.).

[0153] The method may further comprise forming a first transport layer 524. The first transport layer 524 may be formed, for example, between the first reflective surface 104a and the first layer 106.

[0154] The method may further comprise forming a second transport layer 526. The second transport layer 526 may be formed, for example, between the second reflective surface 112a and the second layer 108.

[0155] The method may further comprise forming an encapsulation 528. The encapsulation 528 may, for example, be formed over the second electrode 112. The encapsulation 528 may, for example, at least partially cover the second electrode 112. In one embodiment, the encapsulation 528 may, for example, at least partially encapsulate the optoelectronic component 100. For example, the encapsulation 528 may be configured such that the various components of the optoelectronic component 100 can be at least partially covered by the encapsulation 528.

[0156] The method may further comprise forming an additional photoactive device 632, wherein the photoactive device 130 and the additional photoactive device 632 may be arranged one above the other.

[0157] In the following, various examples are described which relate to what has been described and illustrated above.

[0158] Example 1 is an optoelectronic component, which may comprise: a substrate; a first electrode arranged on the substrate and having a first reflective surface; a second electrode arranged above the first electrode and having a second reflective surface, wherein the second reflective surface and the first reflective surface are configured to form an optical cavity; a first layer comprising a first material, which is arranged between the first reflective surface and the second reflective surface; a second layer comprising a second material, which is arranged between the first layer and the second reflective surface, wherein the second material is different from the first material;a third layer comprising a third material disposed between the first layer and the second layer, the third material being different from the first material and the second material;wherein the first material, the second material, and the third material are configured such that, when the optoelectronic component is irradiated by means of an electromagnetic wave, charge carriers of a first type and charge carriers of a second type are generated in the third layer by means of absorption of the electromagnetic wave in the third material, the charge carriers of the first type generated in the third layer are transferred from the third layer to the first layer, the charge carriers of the second type generated in the third layer are transferred from the third layer to the second layer, the transferred charge carriers of the first type in the first layer are transported to the first electrode, and the transferred charge carriers of the second type in the second layer are transported to the second electrode;

[0159] For example, the first layer, the second layer and the third layer may form a photoactive element of the optoelectronic device.

[0160] In Example 2, the optoelectronic component according to Example 1 may further comprise that the first reflective surface and the second reflective surface are arranged parallel to each other.

[0161] In Example 3, the optoelectronic component according to Example 1 or 2 may further comprise that the first reflective surface and the second reflective surface are arranged opposite one another.

[0162] In Example 4, the optoelectronic component according to any one of Examples 1 to 3 may further comprise that the first reflective surface and the second reflective surface are configured such that one or more longitudinal modes of the electromagnetic wave are generated between the first reflective surface and the second reflective surface when the optoelectronic component is irradiated by means of the electromagnetic wave.

[0163] In Example 5, the optoelectronic component according to any one of Examples 1 to 4 may further comprise that the third layer is configured such that it is located in a maximum of a longitudinal mode of the electromagnetic wave when the optoelectronic component is irradiated by means of the electromagnetic wave.

[0164] In Example 6, the optoelectronic component according to any one of Examples 1 to 5 may further comprise that the third layer is configured such that it is located in a minimum of a longitudinal mode of the electromagnetic wave when the optoelectronic component is irradiated by means of the electromagnetic wave.

[0165] In Example 7, the optoelectronic component according to Example 5 or 6 may further comprise that the longitudinal mode is a first-order longitudinal mode.

[0166] In Example 8, the optoelectronic component according to Example 5 or 6 may further comprise that the longitudinal mode is a longitudinal mode of an order higher than the first order.

[0167] In Example 9, the optoelectronic component according to any one of Examples 1 to 4 may further comprise that the third layer is configured such that it is located in a maximum of a first longitudinal mode of the electromagnetic wave and that it is located in a minimum of a second longitudinal mode of the electromagnetic wave when the optoelectronic component is irradiated by means of the electromagnetic wave, wherein the order of the first longitudinal mode differs from the order of the second longitudinal mode.

[0168] In Example 10, the optoelectronic component according to Example 9 may further comprise that the first longitudinal mode is a first-order longitudinal mode.

[0169] In Example 11, the optoelectronic component according to Example 9 may further comprise that the first longitudinal mode is a longitudinal mode of an order higher than the first order.

[0170] In Example 12, the optoelectronic component according to any one of Examples 1 to 4 may further comprise that the third layer is configured such that it is located in a maximum of a first longitudinal mode of a first electromagnetic wave (e.g. an electromagnetic wave to be detected) when the optoelectronic component is irradiated by means of the first electromagnetic wave, and is located in a minimum of a second longitudinal mode of a second electromagnetic wave (e.g. an electromagnetic wave not to be detected) when the optoelectronic component is irradiated by means of the second electromagnetic wave, wherein the wavelength of the first electromagnetic wave differs from the wavelength of the second electromagnetic wave.

[0171] In Example 13, the optoelectronic component according to Example 12 may further comprise that the order of the first longitudinal mode differs from the order of the second longitudinal mode.

[0172] In Example 14, the optoelectronic component according to any one of Examples 1 to 13 may further comprise that the third material is configured to generate charge carriers of the first type and charge carriers of the second type by means of absorption of electromagnetic waves having a wavelength in the ultraviolet spectral range.

[0173] In Example 15, the optoelectronic component according to any one of Examples 1 to 14 may further comprise that the third material is configured to generate charge carriers of the first type and charge carriers of the second type by means of absorption of electromagnetic waves having a wavelength in the visible spectral range.

[0174] In Example 16, the optoelectronic component according to any one of Examples 1 to 15 may further comprise that the third material is configured to generate charge carriers of the first type and charge carriers of the second type by means of absorption of electromagnetic waves having a wavelength in the near-infrared spectral range.

[0175] In Example 17, the optoelectronic component according to any one of Examples 1 to 16 may further comprise that the third material is configured to generate charge carriers of the first type and charge carriers of the second type by means of absorption of electromagnetic waves having a wavelength in the infrared spectral range.

[0176] In Example 18, the optoelectronic component according to any one of Examples 1 to 17 may further comprise that the third material is configured to generate charge carriers of the first type and charge carriers of the second type by means of absorption of electromagnetic waves having a wavelength in a spectral range from approximately 150 nm to approximately 10 µm, for example from approximately 400 nm to approximately 2500 nm.

[0177] In Example 19, the optoelectronic component according to any one of Examples 1 to 18 may further comprise that the first layer is configured such that the first layer transmits an electromagnetic wave to be detected when the optoelectronic component is irradiated by means of the electromagnetic wave to be detected.

[0178] In Example 20, the optoelectronic component according to any one of Examples 1 to 19 may further comprise that the second layer is configured such that the second layer transmits an electromagnetic wave to be detected when the optoelectronic component is irradiated by means of the electromagnetic wave to be detected.

[0179] In Example 21, the optoelectronic device according to any one of Examples 1 to 20 may further comprise that the third layer is in physical contact (e.g., in direct physical contact) with the first layer.

[0180] In Example 22, the optoelectronic device according to any one of Examples 1 to 21 may further comprise that the third layer is in physical contact (e.g., in direct physical contact) with the second layer.

[0181] In Example 23, the optoelectronic component according to any one of Examples 1 to 22 may further comprise that the first layer and the second layer form an interface (e.g., a charge separation interface) configured to separate charge carrier pairs (e.g., electron-hole).

[0182] In Example 24, the optoelectronic device according to Example 23 may further comprise that the third layer is arranged at the interface between the first layer and the second layer.

[0183] In Example 25, the optoelectronic component according to Example 23 or 24 may further comprise that the third layer at least partially covers the interface between the first layer and the second layer.

[0184] For example, the part covered by the third layer can be 5%, 10%, 50%, 75%, etc. of the interface between the first layer and the second layer.

[0185] In Example 26, the optoelectronic component according to any one of Examples 23 to 25 may further comprise that the third layer completely covers the interface between the first layer and the second layer.

[0186] In Example 27, the optoelectronic component according to any one of Examples 1 to 26 may further comprise that the first material and the third material are configured such that charge separation of the charge carriers of the first type takes place at an interface between the first layer and the third layer when the optoelectronic component is irradiated by means of the electromagnetic wave.

[0187] In Example 28, the optoelectronic component according to any one of Examples 1 to 27 may further comprise that the first material and the third material are configured such that the charge carriers of the second type generated in the third layer are blocked at an interface between the first layer and the third layer when the optoelectronic component is irradiated by means of the electromagnetic wave.

[0188] In Example 29, the optoelectronic component according to any one of Examples 1 to 28 may further comprise that the second material and the third material are configured such that charge separation of the charge carriers of the second type takes place at an interface between the second layer and the third layer when the optoelectronic component is irradiated by means of the electromagnetic wave.

[0189] In Example 30, the optoelectronic component according to any one of Examples 1 to 29 may further comprise that the second material and the third material are configured such that the charge carriers of the first type generated in the third layer are blocked at an interface between the second layer and the third layer when the optoelectronic component is irradiated by means of the electromagnetic wave.

[0190] In Example 31, the optoelectronic device according to any one of Examples 1 to 30 may further comprise that the third material has a highest occupied molecular orbital which has a higher energy than the highest occupied molecular orbital of the first material.

[0191] In Example 32, the optoelectronic device according to any one of Examples 1 to 31 may further comprise that the second material has a highest occupied molecular orbital which has a higher energy than the highest occupied molecular orbital of the third material.

[0192] In Example 33, the optoelectronic device according to any one of Examples 1 to 32 may further comprise that the third material has a lowest unoccupied molecular orbital which has a higher energy than the lowest unoccupied molecular orbital of the first material.

[0193] In Example 34, the optoelectronic device according to any one of Examples 1 to 33 may further comprise that the second material has a lowest unoccupied molecular orbital which has a higher energy than the lowest unoccupied molecular orbital of the third material.

[0194] In Example 35, the optoelectronic device 100 according to any one of Examples 1 to 34 may further comprise that the geometric distance between the first reflective surface and the second reflective surface is from approximately 20 nm to approximately 5000 nm.

[0195] For example, the geometric distance between the first reflecting surface and the second reflecting surface may be less than 1000 nm, less than 500 nm, less than 200 nm, less than 100 nm, less than 50 nm, etc.

[0196] In Example 36, the optoelectronic component according to any one of Examples 1 to 35 may further comprise that the third layer is configured such that charge carrier transport of the charge carriers of the first type and of the second type generated in the third layer is prevented in the third layer.

[0197] In Example 37, the optoelectronic component according to any one of Examples 1 to 36 may further comprise that the third layer is thinner than 15 nm, for example thinner than 5 nm, for example thinner than 1 nm.

[0198] In Example 38, the optoelectronic component according to any one of Examples 1 to 37 may further comprise that the third layer has a layer thickness of approximately 1×10 -5 nm to approximately 10 nm.

[0199] In Example 39, the optoelectronic component according to any one of Examples 1 to 38 may further comprise that the third layer has at least 1×10 9 Molecules of the third material per cm 2 has.

[0200] In Example 40, the optoelectronic component according to any one of Examples 1 to 39 may further comprise that the third layer is 2.45×10 -15 mol of the third material per cm 2 has

[0201] In Example 41, the optoelectronic component according to any one of Examples 1 to 40 may further comprise that the first layer has a layer thickness of approximately 10 nm to approximately 500 nm, for example from approximately 30 nm to approximately 400 nm, for example from approximately 50 nm to approximately 200 nm.

[0202] In Example 42, the optoelectronic component according to any one of Examples 1 to 41 may further comprise that the second layer has a layer thickness of approximately 10 nm to approximately 500 nm, for example from approximately 30 nm to approximately 400 nm, for example from approximately 50 nm to approximately 200 nm.

[0203] In Example 43, the optoelectronic component according to any one of Examples 1 to 42 may further comprise that the minimum absorption index of the third layer is 1×10 -6 is.

[0204] In Example 44, the optoelectronic component according to any one of Examples 1 to 43 may further comprise that the third material has an absorption index which is 1 or greater than 1.

[0205] In Example 45, the optoelectronic component according to any one of Examples 1 to 44 may further comprise that the third material has a first absorption index for a wavelength to be detected and a second absorption index for a wavelength not to be detected, wherein the first absorption index is higher than the second absorption index.

[0206] In Example 46, the optoelectronic component according to any one of Examples 1 to 45 may further comprise that a first electrical potential is applied to the first electrode.

[0207] In Example 47, the optoelectronic component according to any one of Examples 1 to 46 may further comprise that a second electrical potential is applied to the second electrode.

[0208] For example, the first potential may differ from the second potential. Thus, an electrical voltage may be generated between the first electrode and the second electrode.

[0209] In Example 48, the optoelectronic component according to any one of Examples 1 to 47 may further comprise that the first reflective surface has a reflection factor which is greater than 0.95, for example greater than 0.99.

[0210] In Example 49, the optoelectronic component according to any one of Examples 1 to 48 may further comprise that the second reflective surface has a reflection factor which is greater than 0.95, for example greater than 0.99.

[0211] In Example 50, the optoelectronic component according to any one of Examples 1 to 49 may further comprise that the third material has a higher absorption coefficient than the first material.

[0212] In Example 51, the optoelectronic component according to any one of Examples 1 to 50 may further comprise that the third material has a higher absorption coefficient than the second material.

[0213] In Example 52, the optoelectronic component according to any one of Examples 1 to 51 may further comprise that the first material is or comprises an organic material (e.g., a polymer).

[0214] In Example 53, the optoelectronic component according to any one of Examples 1 to 52 may further comprise that the first material is or comprises a compound (e.g., an organic compound, such as a polymeric compound).

[0215] In Example 54, the optoelectronic component according to any one of Examples 1 to 53 may further comprise that the first material is or comprises a naphthalenetetracarboxylic acid diimide derivative.

[0216] In Example 55, the optoelectronic component according to any one of Examples 1 to 54 may further comprise that the first material is or comprises at least one material from the following list of materials or a compound of two or more materials from the following list of materials: BPhen:Cs; BCP:Yb; Alq3; NTCDA; Me-NTCDI; HATNA-Cl6.

[0217] In Example 56, the optoelectronic component according to any one of Examples 1 to 55 may further comprise that the first material is or comprises an inorganic material.

[0218] In Example 57, the optoelectronic component according to any one of Examples 1 to 56 may further comprise that the first material is or comprises a compound of at least one organic material and at least one inorganic material.

[0219] In Example 58, the optoelectronic component according to any one of Examples 1 to 57 may further comprise that the second material is or comprises an organic material (e.g., a polymer).

[0220] In Example 59, the optoelectronic component according to any one of Examples 1 to 58 may further comprise that the second material is or comprises a compound (e.g., an organic compound, such as a polymeric compound).

[0221] In Example 60, the optoelectronic device according to any one of Examples 1 to 59 may further comprise that the second material is or comprises an amine.

[0222] In Example 61, the optoelectronic component according to any one of Examples 1 to 60 may further comprise that the second material is or comprises a carboxylic acid derivative.

[0223] In Example 62, the optoelectronic component according to any one of Examples 1 to 61 may further comprise that the second material is or comprises at least one material from the following list of materials or a compound of two or more materials from the following list of materials: BF-DPB; a-NPB; BPAPF; 1-TNATA; 2-TNATA; 4P-TPD; Di-NPD; m-MTDATA; MeO-TPD; PV-TPD; Spiro-MeO-TPD; Spiro-TAD; Spiro-TTB; TAPC.

[0224] In Example 63, the optoelectronic component according to any one of Examples 1 to 62 may further comprise that the second material is or comprises an inorganic material.

[0225] In Example 64, the optoelectronic component according to any one of Examples 1 to 63 may further comprise that the second material is or comprises a compound of at least one organic material and at least one inorganic material.

[0226] In Example 65, the optoelectronic component according to any one of Examples 1 to 64 may further comprise that the third material is or comprises an organic material (e.g., a polymer).

[0227] In Example 66, the optoelectronic component according to any one of Examples 1 to 65 may further comprise that the third material is or comprises a compound (e.g., an organic compound, such as a polymeric compound).

[0228] In Example 67, the optoelectronic component according to any one of Examples 1 to 66 may further comprise that the third material is or comprises a compound of at least one organic material and at least one inorganic material.

[0229] In Example 68, the optoelectronic device according to any one of Examples 1 to 67 may further comprise that the third material is or comprises at least one material from the following list of materials: ZnPc; F4ZnPc; F8ZnPc; CuPc; F16CuPc; CuNC; SnOPC; SnNCCl2; C70; C60; DCV2-3T; DCV2-5T; DCV2-6T; DIP; Pentacene; Me-PTCDI; SubNc; CI6SubPc; DPP(TBFu)2; DTDCTB; HB194; TPDCDTS; TBDI; 3,6-DTNFMN; BDT2TH; PhO-BsubPc; F8TBT; Si-OMeTPA; IDIC; DTT-8.

[0230] In Example 69, the optoelectronic device according to any one of Examples 1 to 68 may further comprise that the third material is or comprises a compound of two or more materials from the following list of materials: ZnPc; F4ZnPc; F8ZnPc; CuPc; F16CuPc; CuNC; SnOPC; SnNCCl2; C70; C60; DCV2-3T; DCV2-5T; DCV2-6T; DIP; Pentacene; Me-PTCDI; SubNc; CI6SubPc; DPP(TBFu)2; DTDCTB; HB194; TPDCDTS; TBDI; 3,6-DTNFMN; BDT2TH; PhO-BsubPc; F8TBT; Si-OMeTPA; IDIC; DTT-8.

[0231] In Example 70, the optoelectronic device according to any one of Examples 1 to 69 may further comprise that the following combinations of materials may be used to form the first layers, the second layer, and the third layer (the combinations describe possible materials for the first layer / the third layer / the second layer): HATNA-CI6 / DCV2-5T / BF-DPB; HATNA-CI6 / ZnPC / BF-DPB; HATNA-CI6 / C60 / a-NPB; HATNA-CI6 / C60 / BPAPF; NTCDA / DCV2-5T / BF-DPB; NTCDA / ZnPC / BF-DPB; NTCDA / C60 / a-NPB; NTCDA / C60 / BPAPF.

[0232] In Example 71, the optoelectronic component according to any one of Examples 1 to 70 may further comprise that the third material is or comprises an inorganic material (e.g., an inorganic semiconductor material).

[0233] In Example 72, the optoelectronic component according to any one of Examples 1 to 71 may further comprise that the third layer is a non-closed layer or is arranged as a non-closed layer.

[0234] In Example 73, the optoelectronic component according to any one of Examples 1 to 72 may further comprise that the third layer consists of a plurality of isolated parts (e.g., islands).

[0235] In Example 74, the optoelectronic device according to any one of Examples 1 to 73 may further comprise that the third layer consists of a one-dimensional structure (e.g., a nanoparticle such as a metal nanoparticle, a nanotube, a nanofiber, a nanorod, etc.).

[0236] In Example 75, the optoelectronic device according to any one of Examples 1 to 74 may further comprise that the third layer consists of a plurality of one-dimensional structures (e.g., a plurality of nanoparticles such as metal nanoparticles, a plurality of nanotubes, a plurality of nanofibers, a plurality of nanorods, etc.).

[0237] In Example 76, the optoelectronic device according to any one of Examples 1 to 75 may further comprise that the third layer is formed from at least one quantum dot structure.

[0238] In Example 77, the optoelectronic device according to any one of Examples 1 to 76 may further comprise that the third layer consists of a two-dimensional structure (e.g., a monolayer, such as a graphene monolayer).

[0239] In Example 78, the optoelectronic device according to any one of Examples 1 to 77 may further comprise that the third layer consists of a plurality of two-dimensional structures (e.g., a plurality of monolayers, such as a plurality of graphene monolayers).

[0240] In Example 79, the optoelectronic component according to any one of Examples 1 to 78 may further comprise that at least one additional element (e.g., a nanoparticle), which may comprise a fourth material (e.g., a metal), is arranged in the third layer. For example, a plurality of additional elements (e.g., a plurality of nanoparticles, etc.), which may comprise the fourth material, may be arranged in the third layer.

[0241] In Example 80, the optoelectronic component according to any one of Examples 1 to 79 may further comprise that the substrate comprises a non-electrically conductive material (e.g., glass, plastic, etc.). For example, the substrate may comprise a polymer (e.g., polyethylene terephthalate, polymethyl methacrylate, polystyrene, etc.).

[0242] In Example 81, the optoelectronic component according to any one of Examples 1 to 79 may further comprise that the substrate comprises an electrically conductive material (e.g., a metal oxide, a metal such as aluminum, copper, gold, etc.).

[0243] In Example 82, the optoelectronic device according to any one of Examples 1 to 79 may further comprise that the substrate comprises a semiconductor material (e.g., silicon).

[0244] In Example 83, the optoelectronic component according to any one of Examples 1 to 82 may further comprise that the substrate is configured to transmit the electromagnetic wave when the optoelectronic component is irradiated by means of the electromagnetic wave.

[0245] In Example 84, the optoelectronic component according to any one of Examples 1 to 83 may further comprise that the substrate is configured such that electromagnetic waves are blocked by the substrate when the optoelectronic component is irradiated through the substrate. For example, electromagnetic waves having a wavelength that cannot be detected may be blocked by the substrate.

[0246] In Example 85, the optoelectronic component according to any one of Examples 1 to 84 may further comprise a first filter layer arranged over a first side of the substrate and configured such that electromagnetic waves are blocked by the first filter layer when the optoelectronic component is irradiated through the substrate. For example, electromagnetic waves having a wavelength that cannot be detected may be blocked by the first filter layer.

[0247] In Example 86, the optoelectronic component according to any one of Examples 1 to 84 may further comprise a second filter layer arranged over a second side of the substrate and configured such that electromagnetic waves are blocked by the second filter layer when the optoelectronic component is irradiated through the substrate. For example, electromagnetic waves having a wavelength that cannot be detected may be blocked by the second filter layer.

[0248] In Example 87, the optoelectronic component according to any one of Examples 1 to 86 may further comprise an encapsulation arranged over the second electrode and at least partially encapsulating the optoelectronic component.

[0249] In Example 88, the optoelectronic component according to Example 87 may further comprise that the encapsulation is configured such that it allows the electromagnetic wave to pass through when the optoelectronic component is irradiated by means of the electromagnetic wave.

[0250] In Example 89, the optoelectronic component according to Example 87 or 88 may further comprise that the encapsulation is configured such that electromagnetic waves are blocked by the encapsulation when the optoelectronic component is irradiated through the encapsulation. For example, electromagnetic waves having a wavelength that cannot be detected may be blocked by the encapsulation.

[0251] In Example 90, the optoelectronic component according to any one of Examples 87 to 89 may further comprise a third filter layer arranged over a first side of the encapsulation and configured such that electromagnetic waves are blocked by the third filter layer when the optoelectronic component is irradiated through the encapsulation. For example, electromagnetic waves having a wavelength that cannot be detected may be blocked by the third filter layer.

[0252] In Example 91, the optoelectronic component according to any one of Examples 87 to 90 may further comprise a fourth filter layer arranged over a second side of the encapsulation and configured such that electromagnetic waves are blocked by the fourth filter layer when the optoelectronic component is irradiated through the encapsulation. For example, electromagnetic waves having a wavelength that cannot be detected may be blocked by the fourth filter layer.

[0253] In Example 92, the optoelectronic component according to any one of Examples 1 to 91 may further comprise a first transport layer which is arranged between the first reflective surface and the first layer and is configured such that, when the optoelectronic component is irradiated by means of the electromagnetic wave, the charge carriers of the first type transported in the first layer are transferred from the first layer to the first transport layer, and the charge carriers of the first type transferred in the first transport layer are transported in the first transport layer to the first electrode.

[0254] In Example 93, the optoelectronic component according to any one of Examples 1 to 92 may further comprise a second transport layer which is arranged between the second reflective surface and the second layer and is configured such that, when the optoelectronic component is irradiated by means of the electromagnetic wave, the charge carriers of the second type transported in the second layer are transferred from the second layer to the second transport layer, and the charge carriers of the second type transferred in the second transport layer are transported in the second transport layer to the second electrode.

[0255] In Example 94, the optoelectronic component according to any one of Examples 1 to 93 may further comprise an additional photoactive element. For example, the additional photoactive element and the photoactive element may be arranged one above the other.

[0256] In Example 95, the optoelectronic device according to Example 94 may further comprise that the thickness of the photoactive element differs from the thickness of the additional photoactive element.

[0257] In Example 96, the optoelectronic device according to Example 94 or 95 may further comprise that the thickness of the third layer of the photoactive element differs from the thickness of a third layer of the additional photoactive element.

[0258] In Example 97, the optoelectronic device according to Example 94 may further comprise that the thickness of the photoactive element and the thickness of the additional photoactive element are the same.

[0259] In Example 98, the optoelectronic device according to Example 94 or 97 may further comprise that the thickness of the third layer of the photoactive element and the thickness of a third layer of the additional photoactive element are the same.

[0260] In Example 99, the optoelectronic component according to any one of Examples 94 to 98 may further comprise an intermediate layer (e.g., a charge recombination layer) arranged between the photoactive element and the additional photoactive element and configured such that charge carriers of the first type and charge carriers of the second type can recombine with each other in the intermediate layer.

[0261] In Example 100, the optoelectronic device according to Example 99 may further comprise that a third electrical potential is applied to the intermediate layer.

[0262] For example, the third potential may differ from the first potential and / or the second potential.

[0263] In Example 101, the optoelectronic device according to Example 99 or 100 may further comprise that the intermediate layer is in physical contact (e.g., in direct physical contact) with the second layer of the photoactive element and with the first layer of the additional photoactive element.

[0264] In Example 102, the optoelectronic device according to any one of Examples 94 to 101 may further comprise a third electrode arranged between the photoactive element and the additional photoactive element and having a third reflective surface and a fourth reflective surface.

[0265] In Example 103, the optoelectronic component according to Example 102 may further comprise that the third reflective surface and the first reflective surface are configured to form a first optical cavity.

[0266] In example 104, the optoelectronic component according to example 102 or 103 may further comprise that the fourth reflective surface and the second reflective surface are configured to form a second optical cavity.

[0267] In Example 105, the optoelectronic component according to Example 104 may further comprise that the optical length of the first optical cavity differs from the optical length of the second optical cavity.

[0268] In Example 106, the optoelectronic component according to any one of Examples 102 to 105 may further comprise that the photoactive element is arranged between the first reflective surface and the third reflective surface.

[0269] In Example 107, the optoelectronic component according to any one of Examples 102 to 106 may further comprise that the additional photoactive element is arranged between the second reflective surface and the fourth reflective surface.

[0270] In example 108, the optoelectronic component according to any one of examples 94 to 107 may further comprise that the third layer of the photoactive element is configured such that it is located in a maximum of a first longitudinal mode (e.g., a longitudinal mode of the first order, or a longitudinal mode of an order which is higher than the first order) of a first electromagnetic wave when the optoelectronic component is irradiated by means of the first electromagnetic wave.

[0271] In example 109, the optoelectronic component according to any one of examples 94 to 108 may further comprise that the third layer of the additional photoactive element is configured such that it is located in a maximum of a second longitudinal mode (e.g., a longitudinal mode of the first order, or a longitudinal mode of an order which is higher than the first order) of a second electromagnetic wave when the optoelectronic component is irradiated by means of the second electromagnetic wave.

[0272] In example 110, the optoelectronic component according to any one of examples 1 to 109 may be configured as a photodiode.

[0273] Example 111 is an optoelectronic device structure comprising a plurality of optoelectronic devices according to any one of Examples 1 to 109.

[0274] Example 112 is a method of manufacturing an optoelectronic device, the method may include: forming a first electrode on a substrate having a first reflective surface; forming a second electrode over the first electrode, the second electrode having a second reflective surface, the second reflective surface and the first reflective surface being configured to form an optical cavity; forming a first layer comprising a first material disposed between the first reflective surface and the second reflective surface; forming a second layer comprising a second material disposed between the first layer and the second reflective surface, the second material being different from the first material;Forming a third layer comprising a third material disposed between the first layer and the second layer, the third material being different from the first material and the second material;wherein the first material, the second material and the third material are arranged such that, when the optoelectronic component is irradiated by means of an electromagnetic wave, charge carriers of a first type and charge carriers of a second type are generated in the third layer by means of absorption of the electromagnetic wave in the third material, the charge carriers of the first type generated in the third layer are transferred from the third layer to the first layer, the charge carriers of the second type generated in the third layer are transferred from the third layer to the second layer, the transferred charge carriers of the first type in the first layer are transported to the first electrode, and the transferred charge carriers of the second type in the second layer are transported to the second electrode;

[0275] For example, the first layer, the second layer and the third layer may form a photoactive element of the optoelectronic device.

[0276] In Example 113, the method of Example 112 may further include the first reflective surface and the second reflective surface being arranged parallel to each other.

[0277] In example 114, the method of example 112 or 113 may further comprise the first reflective surface and the second reflective surface being arranged opposite each other.

[0278] In Example 115, the method according to any one of Examples 112 to 114 may further comprise that the first reflective surface and the second reflective surface are configured such that one or more longitudinal modes of the electromagnetic wave are generated between the first reflective surface and the second reflective surface when the optoelectronic component is irradiated by means of the electromagnetic wave.

[0279] In example 116, the method according to any one of examples 112 to 115 may further comprise that the third layer is configured such that it is located in a maximum of a longitudinal mode of the electromagnetic wave when the optoelectronic component is irradiated by means of the electromagnetic wave.

[0280] In Example 117, the method according to any one of Examples 112 to 116 may further comprise that the third layer is configured such that it is located in a minimum of a longitudinal mode of the electromagnetic wave when the optoelectronic component is irradiated by means of the electromagnetic wave.

[0281] In Example 118, the method of Example 116 or 117 may further comprise that the longitudinal mode is a first-order longitudinal mode.

[0282] In Example 119, the method of Example 116 or 117 may further comprise that the longitudinal mode is a longitudinal mode of an order higher than the first order.

[0283] In example 120, the method according to any one of examples 112 to 115 may further comprise that the third layer is configured such that it is located in a maximum of a first longitudinal mode of the electromagnetic wave, and that it is located in a minimum of a second longitudinal mode of the electromagnetic wave when the optoelectronic component is irradiated by means of the electromagnetic wave, wherein the order of the first longitudinal mode differs from the order of the second longitudinal mode.

[0284] In Example 121, the method of Example 120 may further include the first longitudinal mode being a first-order longitudinal mode.

[0285] In Example 122, the method of Example 120 may further include the first longitudinal mode being a longitudinal mode of an order higher than the first order.

[0286] In Example 123, the method according to any one of Examples 112 to 115 may further comprise that the third layer is configured such that it is located in a maximum of a first longitudinal mode of a first electromagnetic wave (e.g., an electromagnetic wave to be detected) when the optoelectronic component is irradiated by means of the first electromagnetic wave, and is located in a minimum of a second longitudinal mode of a second electromagnetic wave (e.g., an electromagnetic wave not to be detected) when the optoelectronic component is irradiated by means of the second electromagnetic wave, wherein the wavelength of the first electromagnetic wave differs from the wavelength of the second electromagnetic wave.

[0287] In Example 124, the method of Example 123 may further include that the order of the first longitudinal mode is different from the order of the second longitudinal mode.

[0288] In Example 125, the method according to any one of Examples 112 to 124 may further comprise that the third material is configured to generate charge carriers of the first type and charge carriers of the second type by means of absorption of electromagnetic waves having a wavelength in the ultraviolet spectral range.

[0289] In Example 126, the method according to any one of Examples 112 to 125 may further comprise that the third material is configured to generate charge carriers of the first type and charge carriers of the second type by means of absorption of electromagnetic waves having a wavelength in the visible spectral range.

[0290] In Example 127, the method according to any one of Examples 112 to 126 may further comprise that the third material is configured to generate charge carriers of the first type and charge carriers of the second type by means of absorption of electromagnetic waves having a wavelength in the near-infrared spectral range.

[0291] In Example 128, the method according to any one of Examples 112 to 127 may further comprise that the third material is configured to generate charge carriers of the first type and charge carriers of the second type by means of absorption of electromagnetic waves having a wavelength in the infrared spectral range.

[0292] In Example 129, the method according to any one of Examples 112 to 128 may further comprise that the third material is configured to generate charge carriers of the first type and charge carriers of the second type by means of absorption of electromagnetic waves having a wavelength in a spectral range from approximately 150 nm to approximately 10 µm, for example from approximately 400 nm to approximately 2500 nm.

[0293] In Example 130, the method according to any one of Examples 112 to 129 may further comprise that the first layer is configured such that the first layer transmits an electromagnetic wave to be detected when the optoelectronic component is irradiated by means of the electromagnetic wave to be detected.

[0294] In Example 131, the method according to any one of Examples 112 to 130 may further comprise that the second layer is configured such that the second layer transmits an electromagnetic wave to be detected when the optoelectronic component is irradiated by means of the electromagnetic wave to be detected.

[0295] In Example 132, the method of any one of Examples 112 to 131 can further comprise the third layer being in physical contact (e.g., in direct physical contact) with the first layer.

[0296] In Example 133, the method of any of Examples 112 to 132 can further comprise the third layer being in physical contact (e.g., in direct physical contact) with the second layer.

[0297] In Example 134, the method according to any one of Examples 112 to 133 may further comprise that the first layer and the second layer form an interface (eg, a charge separation interface) configured to separate charge carrier pairs (eg, electron-hole).

[0298] In Example 135, the method of Example 134 may further comprise the third layer being disposed at the interface between the first layer and the second layer.

[0299] In Example 136, the method of Example 134 or 135 may further comprise the third layer at least partially covering the interface between the first layer and the second layer.

[0300] For example, the part covered by the third layer can be 5%, 10%, 50%, 75%, etc. of the interface between the first layer and the second layer.

[0301] In Example 137, the method of any one of Examples 134 to 136 may further comprise the third layer completely covering the interface between the first layer and the second layer.

[0302] In Example 138, the method according to any one of Examples 112 to 137 may further comprise that the first material and the third material are configured such that charge separation of the charge carriers of the first type takes place at an interface between the first layer and the third layer when the optoelectronic component is irradiated by means of the electromagnetic wave.

[0303] In Example 139, the method according to any one of Examples 112 to 138 may further comprise that the first material and the third material are configured such that the charge carriers of the second type generated in the third layer are blocked at an interface between the first layer and the third layer when the optoelectronic component is irradiated by means of the electromagnetic wave.

[0304] In Example 140, the method according to any one of Examples 112 to 139 may further comprise that the second material and the third material are configured such that charge separation of the charge carriers of the second type takes place at an interface between the second layer and the third layer when the optoelectronic component is irradiated by means of the electromagnetic wave.

[0305] In Example 141, the method according to any one of Examples 112 to 140 may further comprise that the second material and the third material are configured such that the charge carriers of the first type generated in the third layer are blocked at an interface between the second layer and the third layer when the optoelectronic component is irradiated by means of the electromagnetic wave.

[0306] In Example 142, the method of any one of Examples 112 to 141 can further comprise the third material having a highest occupied molecular orbital that has a higher energy than the highest occupied molecular orbital of the first material.

[0307] In Example 143, the method of any one of Examples 112 to 142 can further comprise the second material having a highest occupied molecular orbital that has a higher energy than the highest occupied molecular orbital of the third material.

[0308] In Example 144, the method of any one of Examples 112 to 143 can further comprise the third material having a lowest unoccupied molecular orbital that has a higher energy than the lowest unoccupied molecular orbital of the first material.

[0309] In Example 145, the method of any one of Examples 112 to 144 can further comprise the second material having a lowest unoccupied molecular orbital that has a higher energy than the lowest unoccupied molecular orbital of the third material.

[0310] In Example 146, the method 100 according to any one of Examples 112 to 145 may further include the geometric distance between the first reflective surface and the second reflective surface being from about 20 nm to about 5000 nm.

[0311] For example, the geometric distance between the first reflecting surface and the second reflecting surface may be less than 1000 nm, less than 500 nm, less than 200 nm, less than 100 nm, less than 50 nm, etc.

[0312] In Example 147, the method according to any one of Examples 112 to 146 may further comprise that the third layer is configured such that charge carrier transport of the charge carriers of the first type and of the second type generated in the third layer is prevented in the third layer.

[0313] In Example 148, the method of any one of Examples 112 to 147 may further comprise that the third layer is thinner than 15 nm, for example thinner than 5 nm, for example thinner than 1 nm.

[0314] In Example 149, the method of any one of Examples 112 to 148 may further comprise that the third layer has a layer thickness of approximately 1×10 -5nm to approximately 10 nm.

[0315] In Example 150, the method of any one of Examples 112 to 149 may further comprise that the third layer is at least 1×10 9 Molecules of the third material per cm 2 has.

[0316] In Example 151, the method of any one of Examples 112 to 150 may further comprise that the third layer is 2.45×10 -15 mol of the third material per cm 2 has

[0317] In Example 152, the method according to any one of Examples 112 to 151 may further comprise that the first layer has a layer thickness of about 10 nm to about 500 nm, for example from about 30 nm to about 400 nm, for example from about 50 nm to about 200 nm.

[0318] In Example 153, the method according to any one of Examples 112 to 152 may further comprise that the second layer has a layer thickness of about 10 nm to about 500 nm, for example from about 30 nm to about 400 nm, for example from about 50 nm to about 200 nm.

[0319] In Example 154, the method of any one of Examples 112 to 153 may further comprise that the minimum absorption index of the third layer is 1×10 -6 is.

[0320] In Example 155, the method of any one of Examples 112 to 154 can further comprise the third material having an absorption index that is 1 or greater than 1.

[0321] In Example 156, the method of any one of Examples 112 to 155 can further comprise the third material having a first absorption index for a wavelength to be detected and a second absorption index for a wavelength not to be detected, wherein the first absorption index is higher than the second absorption index.

[0322] In Example 157, the method of any one of Examples 112 to 156 may further comprise applying a first electrical potential to the first electrode.

[0323] In Example 158, the method of any of Examples 112 to 157 may further comprise applying a second electrical potential to the second electrode.

[0324] For example, the first potential may differ from the second potential. Thus, an electrical voltage may be generated between the first electrode and the second electrode.

[0325] In Example 159, the method according to any one of Examples 112 to 158 may further comprise that the first reflective surface has a reflection factor that is greater than 0.95, for example, greater than 0.99.

[0326] In Example 160, the method according to any one of Examples 112 to 159 may further comprise that the second reflective surface has a reflection factor that is greater than 0.95, for example, greater than 0.99.

[0327] In Example 161, the method of any one of Examples 112 to 160 can further comprise the third material having a higher absorption coefficient than the first material.

[0328] In Example 162, the method of any one of Examples 112 to 161 can further comprise the third material having a higher absorption coefficient than the second material.

[0329] In Example 163, the method of any of Examples 112 to 162 may further comprise that the first material is or comprises an organic material (e.g., a polymer).

[0330] In Example 164, the method of any one of Examples 112 to 163 can further comprise that the first material is or comprises a compound (e.g., an organic compound, such as a polymeric compound).

[0331] In Example 165, the method according to any one of Examples 112 to 164 can further comprise that the first material is or comprises a naphthalenetetracarboxylic acid diimide derivative.

[0332] In Example 166, the method of any one of Examples 112 to 164 can further comprise that the first material is or comprises at least one material from the following list of materials or a compound of two or more materials from the following list of materials: BPhen:Cs; BCP:Yb; Alq3; NTCDA; Me-NTCDI; HATNA-Cl6.

[0333] In Example 167, the method of any one of Examples 112 to 166 can further comprise that the first material is or comprises an inorganic material.

[0334] In Example 168, the method of any one of Examples 112 to 167 can further comprise that the first material is or comprises a compound of at least one organic material and at least one inorganic material.

[0335] In Example 169, the method of any one of Examples 112 to 168 can further comprise that the second material is or comprises an organic material (e.g., a polymer).

[0336] In Example 170, the method of any one of Examples 112 to 169 can further comprise that the second material is or comprises a compound (e.g., an organic compound, such as a polymeric compound).

[0337] In Example 171, the method of any one of Examples 112 to 170 can further comprise that the second material is or comprises an amine.

[0338] In Example 172, the method of any one of Examples 112 to 171 can further comprise that the second material is or comprises a carboxylic acid derivative.

[0339] In Example 173, the method of any one of Examples 112 to 172 can further comprise that the second material is or comprises at least one material from the following list of materials or a combination of two or more materials from the following list of materials: BF-DPB; a-NPB; BPAPF; 1-TNATA; 2-TNATA; 4P-TPD; Di-NPD; m-MTDATA; MeO-TPD; PV-TPD; Spiro-MeO-TPD; Spiro-TAD; Spiro-TTB; TAPC.

[0340] In Example 174, the method of any one of Examples 112 to 173 can further comprise that the second material is or comprises an inorganic material.

[0341] In Example 175, the method of any one of Examples 112 to 174 can further comprise that the second material is or comprises a compound of at least one organic material and at least one inorganic material.

[0342] In Example 176, the method of any one of Examples 112 to 175 can further comprise that the third material is or comprises an organic material (e.g., a polymer).

[0343] In Example 177, the method of any one of Examples 112 to 176 can further comprise that the third material is or comprises a compound (e.g., an organic compound, such as a polymeric compound).

[0344] In Example 178, the method of any one of Examples 112 to 177 can further comprise that the third material is or comprises a compound of at least one organic material and at least one inorganic material.

[0345] In Example 179, the method of any one of Examples 112 to 178 can further comprise that the third material is or comprises at least one material from the following list of materials: ZnPc; F4ZnPc; F8ZnPc; CuPc; F16CuPc; CuNC; SnOPC; SnNCCl2; C70; C60; DCV2-3T; DCV2-5T; DCV2-6T; DIP; Pentacene; Me-PTCDI; SubNc; Cl6SubPc; DPP(TBFu)2; DTDCTB; HB194; TPDCDTS; TBDI; 3,6-DTNFMN; BDT2TH; PhO-BsubPc; F8TBT; Si-OMeTPA; IDIC; DTT-8.

[0346] In Example 180, the method of any one of Examples 112 to 179 can further comprise that the third material is or comprises a compound of two or more of the following list of materials: ZnPc; F4ZnPc; F8ZnPc; CuPc; F16CuPc; CuNC; SnOPC; SnNCCl2; C70; C60; DCV2-3T; DCV2-5T; DCV2-6T; DIP; Pentacene; Me-PTCDI; SubNc; Cl6SubPc; DPP(TBFu)2; DTDCTB; HB194; TPDCDTS; TBDI; 3,6-DTNFMN; BDT2TH; PhO-BsubPc; F8TBT; Si-OMeTPA; IDIC; DTT-8.

[0347] In Example 181, the method of any one of Examples 112 to 180 can further include that the following combinations of materials can be used to form the first layers, the second layer, and the third layer (the combinations describe possible materials for the first layer / the third layer / the second layer): HATNA-CI6 / DCV2-5T / BF-DPB; HATNA-CI6 / ZnPC / BF-DPB; HATNA-CI6 / C60 / a-NPB; HATNA-CI6 / C60 / BPAPF; NTCDA / DCV2-5T / BF-DPB; NTCDA / ZnPC / BF-DPB; NTCDA / C60 / a-NPB; NTCDA / C60 / BPAPF.

[0348] In Example 182, the method of any of Examples 112 to 181 may further comprise that the third material is or comprises an inorganic material (e.g., an inorganic semiconductor material).

[0349] In Example 183, the method of any one of Examples 112 to 182 may further comprise that the third layer is a non-closed layer or is arranged as a non-closed layer.

[0350] In Example 184, the method of any one of Examples 112 to 183 may further comprise that the third layer consists of a plurality of isolated parts (e.g., islands).

[0351] In Example 185, the method of any one of Examples 112 to 184 can further comprise that the third layer consists of a one-dimensional structure (e.g., a nanoparticle such as a metal nanoparticle, a nanotube, a nanofiber, a nanorod, etc.).

[0352] In Example 186, the method of any one of Examples 112 to 185 can further comprise that the third layer consists of a plurality of one-dimensional structures (e.g., a plurality of nanoparticles such as metal nanoparticles, a plurality of nanotubes, a plurality of nanofibers, a plurality of nanorods, etc.).

[0353] In Example 187, the method of any one of Examples 112 to 186 may further comprise the third layer being formed from at least one quantum dot structure.

[0354] In Example 188, the method of any one of Examples 112 to 187 can further comprise that the third layer consists of a two-dimensional structure (e.g., a monolayer, such as a graphene monolayer).

[0355] In Example 189, the method of any one of Examples 112 to 188 can further comprise that the third layer consists of a plurality of two-dimensional structures (e.g., a plurality of monolayers, such as a plurality of graphene monolayers).

[0356] In Example 190, the method of any of Examples 112 to 189 may further comprise that at least one additional element (e.g., a nanoparticle), which may comprise a fourth material (e.g., a metal), is disposed in the third layer. For example, a plurality of additional elements (e.g., a plurality of nanoparticles, etc.), which may comprise the fourth material, may be disposed in the third layer.

[0357] In Example 191, the method of any of Examples 112 to 190 can further comprise the substrate comprising a non-electrically conductive material (e.g., glass, plastic, etc.). For example, the substrate can comprise a polymer (e.g., polyethylene terephthalate, polymethyl methacrylate, polystyrene, etc.).

[0358] In Example 192, the method of any one of Examples 112 to 191 can further comprise the substrate comprising an electrically conductive material (e.g., a metal oxide, a metal such as aluminum, copper, gold, etc.).

[0359] In Example 193, the method of any of Examples 112 to 192 may further include the substrate comprising a semiconductor material (e.g., silicon).

[0360] In Example 194, the method according to any one of Examples 112 to 193 may further comprise that the substrate is configured such that it transmits the electromagnetic wave when the optoelectronic component is irradiated by means of the electromagnetic wave.

[0361] In Example 195, the method according to any one of Examples 112 to 194 may further comprise that the substrate is configured such that electromagnetic waves are blocked by the substrate when the optoelectronic component is irradiated through the substrate. For example, electromagnetic waves having a wavelength that cannot be detected may be blocked by the substrate.

[0362] In Example 196, the method according to any one of Examples 112 to 195 may further comprise forming a first filter layer arranged over a first side of the substrate and configured such that electromagnetic waves are blocked by the first filter layer when the optoelectronic component is irradiated through the substrate. For example, electromagnetic waves having a wavelength that cannot be detected may be blocked by the first filter layer.

[0363] In Example 197, the method according to any one of Examples 112 to 196 may further comprise forming a second filter layer arranged over a second side of the substrate and configured such that electromagnetic waves are blocked by the second filter layer when the optoelectronic component is irradiated through the substrate. For example, electromagnetic waves having a wavelength that cannot be detected may be blocked by the second filter layer.

[0364] In Example 198, the method of any one of Examples 112 to 197 may further comprise forming an encapsulant disposed over the second electrode and at least partially encapsulating the optoelectronic device.

[0365] In Example 199, the method according to Example 198 may further comprise that the encapsulation is configured such that it allows the electromagnetic wave to pass through when the optoelectronic component is irradiated by means of the electromagnetic wave.

[0366] In example 200, the method according to example 198 or 199 may further comprise that the encapsulation is configured such that electromagnetic waves are blocked by means of the encapsulation when the optoelectronic component is irradiated through the encapsulation. For example, electromagnetic waves having a wavelength that cannot be detected may be blocked by means of the encapsulation.

[0367] In Example 201, the method according to any one of Examples 198 to 200 may further comprise forming a third filter layer arranged over a first side of the encapsulation and configured such that electromagnetic waves are blocked by the third filter layer when the optoelectronic component is irradiated through the encapsulation. For example, electromagnetic waves having a wavelength that cannot be detected may be blocked by the third filter layer.

[0368] In Example 202, the method according to any one of Examples 198 to 201 may further comprise forming a fourth filter layer arranged over a second side of the encapsulation and configured such that electromagnetic waves are blocked by the fourth filter layer when the optoelectronic component is irradiated through the encapsulation. For example, electromagnetic waves having a wavelength that cannot be detected may be blocked by the fourth filter layer.

[0369] In example 203, the method according to any one of examples 112 to 202 may further comprise forming a first transport layer which is arranged between the first reflective surface and the first layer and is configured such that, when the optoelectronic component is irradiated by means of the electromagnetic wave, the charge carriers of the first type transported in the first layer are transferred from the first layer to the first transport layer, and the charge carriers of the first type transferred in the first transport layer are transported in the first transport layer to the first electrode.

[0370] In example 204, the method according to any one of examples 112 to 203 may further comprise forming a second transport layer which is arranged between the second reflective surface and the second layer and is configured such that, when the optoelectronic component is irradiated by means of the electromagnetic wave, the charge carriers of the second type transported in the second layer are transferred from the second layer to the second transport layer, and the charge carriers of the second type transferred in the second transport layer are transported in the second transport layer to the second electrode.

[0371] In Example 205, the method of any one of Examples 112 to 204 may further comprise forming an additional photoactive element.

[0372] For example, the additional photoactive element and the photoactive element can be arranged one above the other.

[0373] In Example 206, the method of Example 205 can further comprise that the thickness of the photoactive element is different from the thickness of the additional photoactive element.

[0374] In Example 207, the method of Example 205 or 206 may further comprise that the thickness of the third layer of the photoactive element differs from the thickness of a third layer of the additional photoactive element.

[0375] In Example 208, the method of Example 205 may further comprise the thickness of the photoactive element and the thickness of the additional photoactive element being the same.

[0376] In Example 209, the method of Example 205 or 208 may further comprise that the thickness of the third layer of the photoactive element and the thickness of a third layer of the additional photoactive element are the same.

[0377] In Example 210, the method according to any one of Examples 205 to 209 may further comprise forming an intermediate layer (e.g., a charge recombination layer) disposed between the photoactive element and the additional photoactive element and configured such that charge carriers of the first type and charge carriers of the second type can recombine with each other in the intermediate layer.

[0378] In Example 211, the method of Example 210 may further comprise applying a third electrical potential to the intermediate layer.

[0379] For example, the third potential may differ from the first potential and / or the second potential.

[0380] In Example 212, the method of Example 210 or 211 may further comprise the intermediate layer being in physical contact (e.g., in direct physical contact) with the second layer of the photoactive element and with the first layer of the additional photoactive element.

[0381] In Example 213, the method of any one of Examples 205 to 212 may further comprise forming a third electrode disposed between the photoactive element and the additional photoactive element and having a third reflective surface and a fourth reflective surface.

[0382] In Example 214, the method of Example 213 may further include the third reflective surface and the first reflective surface being configured to form a first optical cavity.

[0383] In example 215, the method of example 213 or 214 may further comprise that the fourth reflective surface and the second reflective surface are configured to form a second optical cavity.

[0384] In Example 216, the method of Example 215 may further comprise that the optical length of the first optical cavity is different from the optical length of the second optical cavity.

[0385] In Example 217, the method of any one of Examples 213 to 216 may further comprise the photoactive element being disposed between the first reflective surface and the third reflective surface.

[0386] In Example 218, the method of any one of Examples 213 to 217 may further comprise the additional photoactive element being disposed between the second reflective surface and the fourth reflective surface.

[0387] In example 219, the method according to any one of examples 205 to 218 may further comprise that the third layer of the photoactive element is configured such that it is located in a maximum of a first longitudinal mode (e.g., a longitudinal mode of the first order, or a longitudinal mode of an order which is higher than the first order) of a first electromagnetic wave when the optoelectronic component is irradiated by means of the first electromagnetic wave.

[0388] In example 220, the method according to any one of examples 205 to 219 may further comprise that the third layer of the additional photoactive element is configured such that it is located in a maximum of a second longitudinal mode (e.g., a longitudinal mode of the first order, or a longitudinal mode of an order which is higher than the first order) of a second electromagnetic wave when the optoelectronic component is irradiated by means of the second electromagnetic wave.

[0389] Further advantageous embodiments of the methods result from the examples of the optoelectronic component and vice versa.

Claims

[1] Optoelectronic component (100) comprising: a substrate (102); a first electrode (104) disposed on the substrate (102) and having a first reflective surface (104a); a second electrode (112) disposed above the first electrode (104) and having a second reflective surface (112a), the second reflective surface (112a) and the first reflective surface (104a) being configured to form an optical cavity; a first layer (106) comprising a first material disposed between the first reflective surface (104a) and the second reflective surface (112a); a second layer (108) comprising a second material disposed between the first layer (106) and the second reflective surface (112a), the second material being different from the first material; and a third layer (110) comprising a third material disposed between the first layer (106) and the second layer (108), the third material being different from the first material and the second material, wherein the second material has a highest occupied molecular orbital (218-1) having a higher energy than the highest occupied molecular orbital (220-1) of the third material, and a lowest unoccupied molecular orbital (218-2) having a higher energy than the lowest unoccupied molecular orbital (220-2) of the third material, and the third material has a highest occupied molecular orbital (220-1) having a higher energy than the highest occupied molecular orbital (216-1) of the first material, and a lowest unoccupied molecular orbital (220-2) having a higher energy than the lowest unoccupied molecular orbital (216-2) of the first material; wherein the first material, the second material and the third material each comprise at least one organic material or a compound of at least one organic material and the energy levels of the first material, the second material and the third material are arranged such that when the optoelectronic component (100) is irradiated by means of an electromagnetic wave, - charge carrier pairs consisting of a charge carrier of a first type and a charge carrier of a second type are generated in the third layer (110) by absorption of the electromagnetic wave in the third material, - the charge carrier pairs generated in the third layer (110) are separated at the interface of the third layer (110) to the first or second layer (106, 108), wherein • Charge carriers of the first type of a charge carrier pair generated in the third layer (110) are transferred from the third layer (110) to the first layer (106) when a charge carrier pair generated in the third layer (110) comes to the interface between the first layer (106) and the third layer (110); • the transfer of charge carriers of the second type of a charge carrier pair generated in the third layer (110) to the first layer (106) is prevented when a charge carrier pair generated in the third layer (110) comes to the interface between the first layer (106) and the third layer (110); • Charge carriers of the second type of a charge carrier pair generated in the third layer (110) are transferred from the third layer (110) to the second layer (108) when a charge carrier pair generated in the third layer (110) comes to the interface between the second layer (108) and the third layer (110); and • the transfer of charge carriers of the first type of a charge carrier pair generated in the third layer (110) to the second layer (108) is prevented when a charge carrier pair generated in the third layer (110) comes to the interface between the second layer (108) and the third layer (110); - the transferred charge carriers of the first type in the first layer (106) are transported to the first electrode (104), and - the transferred charge carriers of the second type in the second layer (108) are transported to the second electrode (112), wherein the third layer (110) consists of at least two individual parts of the third material, wherein the individual parts are spaced from each other by a gap, so that the third layer (110) is arranged as a non-closed layer, and wherein the third layer (110) is arranged such that it is located in a maximum of a longitudinal mode of the electromagnetic wave when the optoelectronic component (100) is irradiated by means of the electromagnetic wave. [2] Optoelectronic device (100) according to claim 1, wherein the third layer (110) is in physical contact with the first layer (106) and with the second layer (108). [3] Optoelectronic component (100) according to one of claims 1 or 2, wherein the third layer (110) has an effective layer thickness of approximately 1×10 -5 nm to approximately 10 nm. [4] Optoelectronic component (100) according to one of claims 1 to 3, wherein the third layer (110) consists of a plurality of isolated parts. [5] Optoelectronic component (100) according to one of claims 1 to 4, wherein the third material has a first absorption index for a wavelength to be detected and a second absorption index for a wavelength not to be detected, wherein the first absorption index is higher than the second absorption index. [6] Optoelectronic component (100) according to one of claims 1 to 5, wherein the third layer (110) is configured such that it is located in a maximum of a first longitudinal mode of a first electromagnetic wave to be detected when the optoelectronic component (100) is irradiated by means of the first electromagnetic wave, and is located in a minimum of a second longitudinal mode of a second electromagnetic wave not to be detected when the optoelectronic component (100) is irradiated by means of the second electromagnetic wave, wherein the wavelength of the first electromagnetic wave differs from the wavelength of the second electromagnetic wave. [7] Optoelectronic component (100) according to one of claims 1 to 6, further comprising a first transport layer (524) which is arranged between the first reflective surface (104a) and the first layer (106) and is configured such that, when the optoelectronic component (100) is irradiated by means of the electromagnetic wave, the charge carriers of the first type transported in the first layer (106) are transferred from the first layer (106) to the first transport layer (524), and the charge carriers of the first type transferred in the first transport layer (524) are transported in the first transport layer (524) to the first electrode (104); and a second transport layer (526) which is arranged between the second reflective surface (112a) and the second layer (108) and is configured such that, when the optoelectronic component (100) is irradiated by means of the electromagnetic wave, the charge carriers of the second type transported in the second layer (108) are transferred from the second layer (108) to the second transport layer (526), and the charge carriers of the second type transferred in the second transport layer (526) are transported in the second transport layer (526) to the second electrode (112). [8] Optoelectronic component (100) according to one of claims 1 to 7, further comprising an encapsulation (528) which is arranged above the second electrode (112) and at least partially encapsulates the optoelectronic component (100). [9] Optoelectronic component (100) according to one of claims 1 to 8, configured as a photodiode. [10] Optoelectronic component structure comprising a plurality of optoelectronic components (100) according to one of claims 1 to 9. [11] A method for producing an optoelectronic component (100), the method comprising: Forming a first electrode (104) on a substrate (102) having a first reflective surface (104a); Forming a second electrode (112) over the first electrode (104), the second electrode (112) having a second reflective surface (112a), the second reflective surface (112a) and the first reflective surface (104a) being configured to form an optical cavity; Forming a first layer (106) comprising a first material disposed between the first reflective surface (104a) and the second reflective surface (112a); Forming a second layer (108) comprising a second material disposed between the first layer (106) and the second reflective surface (112a), the second material being different from the first material; Forming a third layer (110) comprising a third material disposed between the first layer (106) and the second layer (108), the third material being different from the first material and the second material; wherein the second material has a highest occupied molecular orbital (218-1) having a higher energy than the highest occupied molecular orbital (220-1) of the third material, and a lowest unoccupied molecular orbital (218-2) having a higher energy than the lowest unoccupied molecular orbital (220-2) of the third material, and the third material has a highest occupied molecular orbital (220-1) having a higher energy than the highest occupied molecular orbital (216-1) of the first material, and a lowest unoccupied molecular orbital (220-2) having a higher energy than the lowest unoccupied molecular orbital (216-2) of the first material; wherein the first material, the second material and the third material each comprise at least one organic material or a compound of at least one organic material and the energy levels of the first material, the second material and the third material are arranged such that when the optoelectronic component (100) is irradiated by means of an electromagnetic wave, - charge carrier pairs consisting of a charge carrier of a first type and a charge carrier of a second type are generated in the third layer (110) by absorption of the electromagnetic wave in the third material, - the charge carrier pairs generated in the third layer (110) are separated at the interface of the third layer (110) to the first or second layer (106, 108), wherein • Charge carriers of the first type of a charge carrier pair generated in the third layer (110) are transferred from the third layer (110) to the first layer (106) when a charge carrier pair generated in the third layer (110) comes to the interface between the first layer (106) and the third layer (110); • the transfer of charge carriers of the second type of a charge carrier pair generated in the third layer (110) to the first layer (106) is prevented when a charge carrier pair generated in the third layer (110) comes to the interface between the first layer (106) and the third layer (110); • Charge carriers of the second type of a charge carrier pair generated in the third layer (110) are transferred from the third layer (110) to the second layer (108), • the transfer of charge carriers of the first type of a charge carrier pair generated in the third layer (110) to the second layer (108) is prevented when a charge carrier pair generated in the third layer (110) comes to the interface between the second layer (108) and the third layer (110); - the transferred charge carriers of the first type in the first layer (106) are transported to the first electrode (104), and - the transferred charge carriers of the second type in the second layer (108) are transported to the second electrode (112), wherein the third layer (110) consists of at least two individual parts of the third material, wherein the individual parts are spaced from each other by a gap, so that the third layer (110) is arranged as a non-closed layer, and wherein the third layer (110) is arranged such that it is located in a maximum of a longitudinal mode of the electromagnetic wave when the optoelectronic component (100) is irradiated by means of the electromagnetic wave. [12] The method of claim 11, further comprising Forming a first transport layer (524) disposed between the first reflective surface (104a) and the first layer (106); and Forming a second transport layer (526) disposed between the second reflective surface (112a) and the second layer (108). [13] The method of claim 11 or 12, further comprising forming an encapsulation (528) disposed over the second electrode (112) and at least partially encapsulating the optoelectronic component (100).

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