High-frequency devices and associated manufacturing processes

Abstract

High-frequency device, including: an encapsulation material (2); a high-frequency chip (4) embedded in the encapsulation material (2), wherein the high-frequency chip (4) has a first principal area (6) and a second principal area (8); an electrical redistribution layer (10) arranged above the first main surface (6) of the high-frequency chip (4) and the encapsulation material (2); a high-frequency antenna (12) formed in the redistribution layer (10), designed to radiate signals in a direction from the second main surface (8) to the first main surface (6) and / or to receive signals in a direction from the first main surface (6) to the second main surface (8); and a microwave component (14) arranged below the high-frequency antenna (12) and embedded in the encapsulation material (2) with an electrically conductive wall structure (22), wherein the microwave component (14) extends only partially into the encapsulation material (2) from a first main surface of the encapsulation material (2), the encapsulation material (2) forming a bottom surface of the microwave component (14).

Description

Technical field

[0001] The present disclosure relates generally to radio frequency (RF) technology. In particular, the present disclosure relates to radio frequency devices and associated manufacturing processes. background

[0002] RF devices can be used in various applications, including automotive safety systems. For example, radar sensors can be used for blind spot detection, automated speed control, collision avoidance systems, and more. In one known approach, the RF signals provided by an RF device can be radiated by antennas mounted on a printed circuit board (PCB). This typically requires the PCB to have an expensive RF laminate for the RF signal paths. Furthermore, this approach can result in signal transmission losses between the RF chip and the RF antennas. RF device manufacturers are constantly striving to provide improved RF devices and manufacturing processes. In particular, it may be desirable to provide cost-effective RF devices with low power losses, along with associated manufacturing processes.

[0003] Publication US 2016 / 0293557A1 concerns a package for embedding one or more electronic components, in particular using a silicon-based packaging technology.

[0004] The publication DE 11 2015 005 575 T5 relates to a microwave antenna device, a microwave antenna unit and a method for manufacturing a microwave antenna device.

[0005] Document US 2014 / 0 285 389 A1 concerns a high-frequency system with a microstrip-to-waveguide transition.

[0006] Publication DE 10 2019 118 691 A1 concerns a semiconductor package with a plastic waveguide.

[0007] Document US 2016 / 0118705A1 concerns IC waveguide interfaces for packaged semiconductor devices. Brief description

[0008] Several aspects pertain to a high-frequency device. The high-frequency device comprises an encapsulation material. The high-frequency device further comprises a high-frequency chip embedded in the encapsulation material, the high-frequency chip having a first main surface and a second main surface. The high-frequency device further comprises an electrical redistribution layer arranged above the first main surface of the high-frequency chip and the encapsulation material. The high-frequency device further comprises a high-frequency antenna formed in the redistribution layer, which is configured to radiate signals in a direction from the second main surface to the first main surface and / or to receive signals in a direction from the first main surface to the second main surface.The high-frequency device further comprises a microwave component arranged below the high-frequency antenna and embedded in the encapsulation material, having an electrically conductive wall structure, wherein the microwave component extends only partially into the encapsulation material from a first main surface of the encapsulation material, the encapsulation material forming a bottom surface of the microwave component.

[0009] Several aspects relate to a method for manufacturing a high-frequency device. The method comprises embedding a high-frequency chip in an encapsulation material. The method further comprises forming a microwave component with an electrically conductive wall structure in the encapsulation material, wherein the microwave component extends only partially into the encapsulation material from a first principal surface, the encapsulation material forming a base surface of the microwave component. The method further comprises forming an electrical redistribution layer over the high-frequency chip and the encapsulation material. The method further comprises forming a high-frequency antenna in the redistribution layer and over the microwave component.

[0010] Several aspects pertain to a high-frequency device. The high-frequency device comprises an encapsulation material. The high-frequency device further comprises a high-frequency chip embedded in the encapsulation material, the high-frequency chip having a first main surface and a second main surface. The high-frequency device further comprises an electrical redistribution layer arranged above the first main surface of the high-frequency chip and the encapsulation material. The high-frequency device further comprises a high-frequency antenna formed in the redistribution layer, which is configured to radiate signals in a direction from the second main surface to the first main surface and / or to receive signals in a direction from the first main surface to the second main surface.The high-frequency device further comprises a microwave component arranged below the high-frequency antenna and embedded in the encapsulation material, having an electrically conductive wall structure, wherein the microwave component forms a waveguide extending at least partially into the encapsulation material, and wherein the microwave component extends from a first principal surface of the encapsulation material completely through the encapsulation material to a second principal surface of the encapsulation material. Brief description of the drawings

[0011] The devices and methods according to the disclosure are explained in more detail below with reference to the drawings. The elements shown in the drawings are not necessarily drawn to scale relative to each other. Identical reference numerals may denote identical components. Fig. Figure 1 schematically shows a cross-sectional side view of an RF device 100 according to the disclosure. Fig. Figure 2 schematically shows a cross-sectional side view of an RF device 200 according to the disclosure. Fig. Figure 3 schematically shows a cross-sectional side view of an RF device 300 according to the disclosure. Fig. Figure 4 schematically shows a cross-sectional side view of an RF device 400 according to the disclosure. Fig. Figure 5 schematically shows a cross-sectional side view of an RF device 500 according to the disclosure. Fig. Figure 6 schematically shows a cross-sectional side view of an RF device 600 according to the disclosure. Fig. Figure 7 schematically shows a cross-sectional side view of an RF device 700 according to the disclosure. Fig. Figure 8 schematically shows a cross-sectional side view of an RF device 800 according to the disclosure. Fig. Figure 9 schematically shows a cross-sectional side view of an RF device 900 according to the disclosure. Fig. Figure 10 schematically shows a cross-sectional side view of an RF device 1000 according to the disclosure. Fig. Figure 11 shows a flowchart of a process for manufacturing an RF device according to the disclosure. Fig. Figure 12 shows a flowchart of a process for manufacturing an RF device according to the disclosure. Fig. Figure 13 schematically shows a cross-sectional side view of an RF device 1300 according to the disclosure. Fig. Figure 14 schematically shows a cross-sectional side view of a multi-layer injection-molded plastic 1400 with an integrated waveguide. Detailed description

[0012] The following detailed description refers to the accompanying drawings, which illustrate specific aspects and embodiments in which the disclosure can be practically implemented. In this context, directional terms such as "top," "bottom," "front," "back," etc., may be used to refer to the orientation of the described figures. Since the components of the described embodiments can be positioned in various orientations, these directional terms are used for illustrative purposes only and are in no way restrictive.

[0013] The following are schematic representations of RF devices according to the disclosure. The RF devices may be depicted in a general way to qualitatively describe aspects of the disclosure. Each RF device may also have further aspects that are not shown in the figures for the sake of simplicity. For example, the respective RF devices may be extended to include any aspects described in connection with other devices or methods according to the disclosure.

[0014] Fig. Figure 1 schematically shows a cross-sectional side view of an RF device 100 according to the disclosure. The RF device 100 can comprise an encapsulation material 2 and an RF chip 4 embedded in the encapsulation material 2. The RF chip 4 can have a first main surface 6 and a second, opposite main surface 8. An electrical redistribution layer (or rewiring layer) 10 can be arranged above the first main surface 6 of the RF chip 4 and the encapsulation material 2. At least one RF antenna 12 can be formed in the redistribution layer 10. The RF antenna 12 can be configured to radiate signals in a direction from the second main surface 8 to the first main surface 6 and / or to receive signals in a direction from the first main surface 6 to the second main surface 8. Fig. Figure 1 shows two RF antennas 12 as examples. However, the RF device 100 can include further RF antennas, which may not be visible due to the chosen cross-sectional side view. In other examples, the RF device 100 can include any number of RF antennas, each of which can be configured as a receiving and / or transmitting antenna. The RF device 100 can also include one or more microwave components 14 with an electrically conductive wall structure 22. The respective microwave component 14 can be arranged below the respective RF antenna 12 and embedded in the encapsulation material 2. Viewed in the z-direction, a microwave component 14 and the RF antenna 12 arranged above it can overlap at least partially.

[0015] The RF chip 4 and the microwave component 14 can each be at least partially embedded in the encapsulation material 2. That is, the encapsulation material 2 can form a housing for the RF device 100. In this context, the RF device 100 can also be referred to as a semiconductor package or RF package. In the example of the Fig. 1. The side surfaces of the RF chip 4 and the side surfaces of the microwave component 14 can be covered by the encapsulation material 2. The encapsulation material 2 protects the RF chip 4 and the microwave component 14 against external influences such as moisture, leakage currents, or mechanical shocks. The encapsulation material 2 can, for example, comprise at least one of a mold compound, a laminate, an epoxy, a filled epoxy, a glass fiber-filled epoxy, an imide, a thermoplastic, a thermosetting polymer, or a polymer mixture.

[0016] The RF chip 4 can, in particular, comprise or correspond to a monolithic microwave integrated circuit (MMIC). The RF chip 4 can operate in different frequency ranges. Accordingly, the RF antennas 12 electrically coupled to the RF chip 4 can be designed to transmit and / or receive signals with frequencies in these frequency ranges. For example, the RF chip 4 can operate in a high-frequency or microwave frequency range, which generally extends from about 10 GHz to about 300 GHz. Therefore, for example, integrated circuits in the RF chip 4 can operate in a frequency range greater than about 10 GHz, and the RF antennas 12 can transmit and / or receive signals with a frequency greater than about 10 GHz.Such microwave circuits can include, for example, microwave transmitters, microwave receivers, microwave transceivers, microwave sensors, or microwave detectors. The RF devices described herein can be used, for example, in radar applications where the frequency of the RF signal can be modulated. Radar microwave devices can be used, for example, in automotive or industrial applications for distance detection / measuring systems. Automatic vehicle cruise control systems or vehicle anti-collision systems, for example, can operate in the microwave frequency range, such as in the frequency bands from 76 GHz to 77 GHz and from 77 GHz to 81 GHz.

[0017] Alternatively or additionally, the RF chip 4 can operate in a Bluetooth frequency range. Such a frequency range can, for example, include an ISM (Industrial, Scientific and Medical) band between approximately 2.402 GHz and approximately 2.480 GHz. The RF chip 4, or circuits integrated into the RF chip 4, can therefore be designed more generally to operate in a frequency range greater than approximately 1 GHz, and the RF antennas 12 can accordingly be designed to transmit and / or receive signals with a frequency greater than approximately 1 GHz.

[0018] The redistribution layer 10 can have one or more electrically conductive structures 16 in the form of metal layers or metal traces, which can run essentially parallel to the top surfaces of the RF chip 4 and / or the encapsulation material 2. The metal layers 16 can be made of, for example, copper or a copper alloy. One or more dielectric layers 18 can be arranged between the metal layers 16 to electrically insulate them from one another. The dielectric layers 18 can be made of, for example, an oxide and / or a nitride. Furthermore, metal layers 16 arranged at different levels can be electrically connected to one another by a plurality of vias.

[0019] The metal layers 16 of the redistribution layer 10 can perform the function of redistribution or rewiring and are designed to provide connections of the RF chip 4 at other positions of the RF device 100. In the example of the Fig. For example, the connections of the RF chip 4 can be electrically coupled to electrical contact pads 20 via the redistribution layer 10. Circuits integrated into the RF chip 4 from outside the RF device 100 can be electrically contacted via the electrical contact pads 20. The electrical contact pads 20 can, in particular, have a larger area than the contact pads of the connections of the RF chip 4. An increase in size and electrical redistribution of the connections of the RF chip 4 can be achieved when the RF device 100 is subsequently embedded in a printed circuit board (see Figure 1). Fig. 2) be advantageous. For example, the enlarged electrical contact areas 20 can act as stop layers when forming holes in the printed circuit board using a laser process.

[0020] In the example of the Fig. 1. The redistribution layer 10 allows for a redistribution of the connections of the RF chip 4 to the electrical contact pads 20, which, viewed in the z-direction, may be located outside the outline of the RF chip 4. An RF device 100 with such a spreading of the chip connections can be referred to as a "fan-out" device or "fan-out" package. In the example of the Fig. 1. The RF device 100 can be a wafer-level package, which may be manufactured using an eWLB (embedded wafer-level ball grid array) process. In this package type, the top surfaces of the RF chip 4 and the encapsulation material 2 can lie in a common plane, i.e., be coplanar, due to the manufacturing process. However, RF devices according to the disclosure are not limited to a specific semiconductor package type. Another exemplary package type in an RF device according to the disclosure is described in the Fig. 8 shown and described.

[0021] One or more of the metal layers 16 can be designed to provide one or more electronic components (or functional elements) in the redistribution layer 10. The electronic components can, in particular, include passive electronic components. A passive electronic component can, for example, include one or more of the following: resistor, capacitor, inductive component (e.g., inductor or coil), etc. In the example of the Fig. 1. In particular, the RF antennas 12 can be formed from the metal layers 16 of the redistribution layer 10. The respective RF antenna 12 can be configured, for example, as a dipole antenna, an array of two dipole antennas, a coplanar patch antenna, a slot antenna, a Vivaldi antenna, etc. Viewed in the z-direction, the RF antennas 12 can, for example, be arranged outside the outline of the RF chip 4.

[0022] The microwave component 14 can be at least partially embedded in the encapsulation material 2. In one example, the microwave component 14 can be a prefabricated insert that has been embedded in the encapsulation material 2. Such an insert can, for example, be made of a material similar to the encapsulation material 2. In another example, the microwave component 14 can be produced directly in the encapsulation material 2 after the encapsulation material 4 has been formed.

[0023] The microwave component 14 can have at least one electrically conductive wall structure 22. In particular, the electrically conductive wall structure 22 can form side walls of the microwave component 14. Viewed in the z-direction, the electrically conductive wall structure 22 can thus at least partially, and in particular completely, enclose the interior of the microwave component 14. In other words, the electrically conductive wall structure 22 can form an electrically conductive cage around the interior of the microwave component 14 and below the RF antenna 12. In further examples, the electrically conductive wall structure 22 can additionally form a base surface of the microwave component 14.

[0024] In one example, the electrically conductive wall structure 22 can be an "open structure" and comprise a multitude of metallized via holes. The via holes can be formed directly in the encapsulation material 2 and / or in an insert. For example, the via holes in the encapsulation material 2 can be created by laser drilling, and metallization of the inner walls of the via holes can be achieved, for example, by conductive paste or metal plating. In another example, the electrically conductive wall structure 22 can, for example, comprise a metal coating on one wall of such an insert. In this case, the electrically conductive wall structure 22 can be configured as a grid or network of conductive strips formed on the side walls of the insert. Furthermore, the electrically conductive wall structure 22 can be configured as a continuous metal coating on the side walls of the insert.

[0025] The microwave component 14 can form a waveguide extending at least partially into the encapsulation material 2. For example, metallized via holes formed in the microwave component 14 can be considered a continuation of a waveguide arranged above the microwave component 14, as is the case, for example, in the Fig. 2 is shown.

[0026] The microwave component 14 can be, or act as, an electromagnetic shield. As previously described, an RF antenna 12 arranged above the microwave component 14 can be designed, among other things, to radiate signals in the positive z-direction. With such radiation, the RF antenna 12 can also emit components of electromagnetic radiation in the negative z-direction as well as in the x- and y-directions. The microwave component 14 can be designed, in particular, to electromagnetically shield such signal components emanating from a specific RF antenna 12 from other RF antennas 12 of the RF device 100. This can provide improved isolation or separation of the transmit and / or receive channels provided by the RF antennas 12 of the RF device 100.Electromagnetic shielding by the microwave component 14 can be achieved in particular if the microwave component 14 and the associated RF antenna 12 overlap at least partially when viewed in the z-direction.

[0027] In the example of the Fig. 1. The microwave component 14 can extend completely through the encapsulation material 2 from the first main surface 6 of the encapsulation material 2 to the opposite main surface 8 of the encapsulation material 2. Further examples with differently shaped microwave components 14 are, for example, in the Fig. 3, Fig. 4, Fig. 5 to Fig. 6 shown and described. In the Fig. 1. The wall structure 22 can form side walls of the microwave component 14, but not necessarily a base surface of the microwave component 14. In the example shown, such a base surface can instead be provided by a metallization 24 arranged on the second main surface 8 of the encapsulation material 2. The metallization 24, and the base surface it forms, can further improve the electromagnetic shielding of the microwave component 14 as described above. Alternatively or additionally, the metallization 24 can provide a thermal connection and be designed to dissipate heat generated by the RF chip 4.

[0028] Fig. Figure 2 schematically shows a cross-sectional side view of an RF device 200 according to the disclosure. The RF device can comprise a printed circuit board 26, a semiconductor package 28 embedded in the printed circuit board 26, and a waveguide component 30 arranged above the top surface of the printed circuit board 26. The semiconductor package 28 of the Fig. 2 can, for example, be the RF device 100 of the Fig. 1. similar, so that in this regard there are no further explanations regarding Fig. 1 can be referred to.

[0029] The printed circuit board 26 can contain one or more electrically conductive structures 32 in the form of metal layers or metal traces, which can essentially run in the x-direction. The metal layers 32 can be arranged within the printed circuit board 26 as well as on the top and / or bottom surface of the printed circuit board 26. The metal layers 32 arranged on the top and / or bottom surface of the printed circuit board 26 can form contact surfaces of the printed circuit board 26 on which electronic components can be mounted. For example, the metal layers 32 can be made of copper or a copper alloy. One or more dielectric layers 34 can be arranged between the metal layers 32 to electrically insulate the metal layers 32 from each other. The dielectric layers 34 can be made, for example, of a PCB material such as a fiber-reinforced plastic, in particular a composite material of epoxy resin and glass fiber fabric (e.g., epoxy resin, tungsten carbide, or ferrous ...B. FR4). The metal layers 32, arranged on different levels, can be electrically interconnected by a multitude of vias 36. The metal layers 32 can perform the function of electrical redistribution or rewiring. This redistribution can be provided within the printed circuit board 26 and / or between the electrical contact pads arranged on the outer surfaces of the printed circuit board 26.

[0030] The semiconductor package 28 can be at least partially embedded in or encapsulated by the printed circuit board 26. In particular, all areas of the semiconductor package 28 can be covered by the layers of the printed circuit board 26. Electrical contact of the RF chip 4 from outside the printed circuit board 26 can be provided via the metal layers 32, the vias 36, and the redistribution layer 10 of the semiconductor package 28. In the example of the Fig. 2. The semiconductor package 28 can be arranged on the uppermost inner metal layer 32B of the printed circuit board 26, for example via an adhesive or solder joint. A small distance can be provided between the RF antennas 12 and the upper outer surface of the printed circuit board 26, thus reducing power losses of signals radiated and / or received in the z-direction as they pass through the dielectric layer 34C. The distance between the top surface of the semiconductor package 28 and the top surface of the printed circuit board 26 can be less than about 200 micrometers, more precisely less than about 150 micrometers, and even more precisely less than about 100 micrometers.

[0031] The waveguide component 30 can have one or more waveguides 38, each of which can be arranged above one of the RF antennas 12. Each of the RF antennas 12 can be configured to feed or radiate RF signals generated by the RF chip 4 and directed to the RF antenna 12 into the corresponding waveguide 38. Fig. Figure 2 shows an example of the radiation of electromagnetic waves by RF antennas 12 in the z-direction into the overlying waveguides 38, indicated by wavefronts 40 and arrows. Alternatively or additionally, the RF antennas 12 can be designed to receive RF signals radiated into the waveguides 38 from outside the RF device 200, which can then be forwarded to the RF chip 4. Viewed in the z-direction, the respective waveguide 38 and the associated RF antenna 12 can overlap, at least partially. In this context, the RF antenna 12 can also be referred to as a "waveguide feed". An electrical connection between the RF antenna 12 and the RF chip 4 can be provided by the redistribution layer 10 of the semiconductor package 28.

[0032] The waveguide component 30 can be mounted on a mounting surface of the printed circuit board 26 and mechanically contact it. Due to the embedding of the semiconductor package 28 in the printed circuit board 26, the mounting surface can be essentially flat. This allows the waveguide component 30 to be mounted flush with the mounting surface, providing a small gap between the RF antennas 12 and the waveguides 38. The RF antennas 12 can thus radiate into the waveguides 38 above them with minimal loss, and signals can be received via the waveguides 38 with minimal loss. In the example of the Fig. 2. The waveguide component 30 can be arranged, in particular, above the top surface of the printed circuit board 26. A mechanical connection between the printed circuit board 26 and the waveguide component 30 can be provided by one or more screws, adhesives, solder, clamps, clips, etc.

[0033] The waveguide component 30 can be formed in one piece or comprise a multitude of parts. The waveguide component 30 can be made of plastic, a ceramic material, and / or a dielectric material. In the example of the Fig. 2. The waveguides 38 can be configured as waveguides with metallized inner walls. The waveguides can, in particular, be air- or gas-filled, i.e., contain no solid or liquid. In other words, one or more of the waveguides 38 can be "material-free" waveguides. In further examples, the waveguides of RF devices according to the disclosure can alternatively or additionally be configured as dielectric waveguides or substrate-integrated waveguides (SIW).

[0034] The waveguide component 30 can be formed in a single-layer or multi-layer injection-molded plastic. The at least one waveguide 38 can comprise a metallized waveguide formed in the injection-molded plastic. In the example of the Fig. 2. The waveguide component 30 can have waveguide sections extending both vertically and horizontally through the waveguide component 30. In another example, the waveguide component 30 can only have vertically extending waveguide sections. An exemplary embodiment of a horizontal waveguide section in a multilayer injection-molded plastic is shown in the Fig. 14 shown and described.

[0035] Fig. Figure 3 schematically shows a cross-sectional side view of an RF device 300 according to the disclosure. The RF device 300 can, for example, be compared to the RF device 200 of the Fig. 2 are at least partially similar. In contrast to the Fig. 2. The semiconductor package 28 can be placed in the Fig. 3. The microwave component 14 does not have a metallization 24 on its underside. The microwave component 14 can only partially extend from the top of the encapsulation material 2 into the encapsulation material 2. The bottom surface of the microwave component 14 can therefore be formed by the encapsulation material 2. In comparison to the Fig. 2. This can reduce the electromagnetic shielding provided by the microwave component 14. However, sufficient insulation between the individual channels of the RF device 200 can still be provided by the wall structure 22 of the microwave component 14. In the example of the Fig. 3 The underside of the RF chip 2 can be covered by the encapsulation material 2. The semiconductor package 28 can thus be mounted on a metal layer of the circuit board 26 via the encapsulation material 2. In comparison to the Fig. 2 is in the Fig. 2 For the sake of simplicity, only a smaller section of the circuit board 26 is shown.

[0036] Fig. Figure 4 schematically shows a cross-sectional side view of an RF device 400 according to the disclosure. The RF device 400 can, for example, be compared to the RF device 300 of the Fig. 3 are at least partially similar. In contrast to the Fig. 3. The underside of the RF chip 4 may be uncovered by the encapsulation material 2. Furthermore, a dimension of the microwave component 14 in the z-direction may be reduced. In particular, in the example of the Fig. 4 a dimension of the microwave component 14 in the z-direction be smaller than a corresponding dimension of the RF chip 4.

[0037] Fig. Figure 5 schematically shows a cross-sectional side view of an RF device 500 according to the disclosure. The RF device 500 can, for example, be compared to the RF device 300 of the Fig. 3 be at least partially similar. Analogous to Fig. 3. The RF device 500 cannot have backside metallization. In contrast to the Fig. 3 The undersides of the microwave components 14 and the RF chip 4 can be uncovered by the encapsulation material 2.

[0038] Fig. Figure 6 schematically shows a cross-sectional side view of an RF device 600 according to the disclosure. The RF device 600 can, for example, be compared to the RF device 400 of the Fig. 4. at least partially similar. Analogous to Fig. 4. The microwave component 14 can only partially extend from the top of the encapsulation material 2 into the encapsulation material 2. In contrast to the Fig. 4. One or more of the microwave components 14 can each have an electrically conductive base surface 42. The base surfaces 42 can be made, for example, of a metal (e.g., copper) or a metal alloy. The electrically conductive base surfaces 42 may or may not be considered part of the electrically conductive wall structure 22 of the microwave component 14.

[0039] Fig. Figure 7 schematically shows a cross-sectional side view of an RF device 700 according to the disclosure. The RF device 700 can, for example, be compared to the RF device 200 of the Fig. 2 are at least partially similar. In contrast to the Fig. 2. The RF device 700 cannot have microwave components 14. Compared to the Fig. 2. The probability of crosstalk between channels of the RF device 700 may be increased, while a method for manufacturing the RF device 700 may be simplified.

[0040] Fig. Figure 8 schematically shows a cross-sectional side view of an RF device 800 according to the disclosure. The RF device 800 can, for example, be compared to the RF device 200 of the Fig. 2 are at least partially similar. Unlike the Fig. 2. The RF device 800 may have a different semiconductor package type. For example, the semiconductor package 28 in the Fig. 8 is an FCBGA (Flip Chip Ball Grid Array). The semiconductor package 28 can have a substrate 44, which can be a BGA (Ball Grid Array) substrate. An RF chip 4 can be mounted on the underside of the substrate 44 using a flip-chip technique. The RF chip 4 can be electrically and mechanically connected to the substrate 44, for example, via solder deposits. Signal guidance structures arranged in the substrate 44 can redistribute the connections of the RF chip 4 to the top side of the substrate 44. The RF chip 4 can be electrically contacted from outside the circuit board 26 via the internal conductive structures of the circuit board 26. One or more RF antennas 12 can be formed on the top side of the substrate 44, which can be designed to radiate and / or receive signals in the z-direction. The RF chip 4 can be electrically coupled to the RF antennas 12 via the substrate 44.

[0041] Fig. Figure 9 schematically shows a cross-sectional side view of an RF device 900 according to the disclosure. The RF device 900 can, for example, be compared to the RF device 700 of the Fig. 7 are at least partially similar. In contrast to the Fig. 7. The RF chip 4 could be a "bare die", i.e., a semiconductor chip without a package. In the example of the Fig. 9 One or more RF antennas 12 can be formed in a redistribution layer 10 arranged above the top surface of the RF chip 4. In another example, the RF chip 4 can have no redistribution layer, and the RF antennas 12 can be formed directly on the top surface of the RF chip 4, for example by front-end metallizations.

[0042] Fig. Figure 10 schematically shows a cross-sectional side view of an RF device 1000 according to the disclosure. The RF device 1000 can, for example, be compared to the RF device 700 of the Fig. 7 are at least partially similar. In contrast to the Fig. 7 The waveguide component 30 can be mounted on a side face of the printed circuit board 26. At least one of the RF antennas 12 formed in the redistribution layer 10 can be configured to radiate and / or receive signals in a direction parallel to the redistribution layer 10, i.e., in the x and / or y direction. Such lateral radiation / reception can be provided, for example, by a Vivaldi antenna or a Vivaldi-like antenna. Viewed in the lateral direction, the RF antenna 12 and a waveguide 38 arranged above it of the waveguide component 30 can overlap at least partially. Fig. 10 is a qualitative representation in which such an overlap is not shown for representational reasons.

[0043] Fig. Figure 11 shows a flowchart of a process for manufacturing an RF device according to the disclosure. For example, the process can be used to manufacture one of the RF devices of the Fig. 2, Fig. 3, Fig. 4, Fig. 5, Fig. 6, Fig. 7, Fig. 8, Fig. 9 to Fig. 10. The procedure is presented in a general way to qualitatively describe aspects of the revelation. The procedure can be extended to include one or more aspects described in connection with previously described examples according to the revelation.

[0044] In 46, a semiconductor device can be manufactured. The semiconductor device can include an RF chip and an RF antenna arranged within the semiconductor device. In 48, the manufactured semiconductor device can be embedded in a printed circuit board.

[0045] In a concrete example, the procedure of Fig. 11 can be used to operate the RF device 200 of the Fig. 2 to manufacture. First, the semiconductor package 28 can be manufactured. During manufacturing, the RF chip 4 can be embedded in the encapsulation material 2. One or more of the following techniques can be used, for example: compression molding, injection molding, powder molding, liquid molding, etc. Subsequently, the electrical redistribution layer 10 can be formed over the RF chip 4 and the encapsulation material 2. Conductive traces of the redistribution layer 10 can be produced, for example, by sputtering, electroless deposition, or gas-phase deposition. Dielectric layers of the redistribution layer 10 can be deposited from a gas phase or a solution, or laminated.Structuring the components of the redistribution layer 10 can be carried out, for example, using photolithographic processes, etching processes, and / or laser drilling. During the fabrication of the redistribution layer 10, or during the structuring of the electrically conductive structures of the redistribution layer 10, one or more RF antennas 12 can be formed within the redistribution layer 10. The RF antennas 12 and their electrical leads within the redistribution layer 10 can be structured with particular precision and detail using photolithographic processes.

[0046] The manufactured semiconductor package 28 can be embedded in the printed circuit board 26. The metal layers 32 and the dielectric layers 34 of the printed circuit board 26 can be formed sequentially in the z-direction from bottom to top. After the formation of the uppermost, inner metal layer 32B, the semiconductor package 28 can be mounted on it, for example, via a soldered or adhesive bond. The dielectric layer 34C can then be formed, encapsulating the semiconductor package 28.

[0047] In a further step, holes can be formed in the printed circuit board 26 or in the uppermost dielectric layer 34C, thereby exposing a conductor layer 16 of the redistribution layer 10 or the electrical contact pads 20 of the semiconductor package 28. The formation of the holes can, for example, involve a laser process, which can be stopped by the electrical contact pads 20. The manufactured holes can be filled with an electrically conductive material that can electrically contact the contact pads 20. The electrically conductive material can form perpendicular vias 36 that electrically contact the contact pads 20 on the top surface of the redistribution layer 10. In a further step, the electrically conductive contacts of the printed circuit board 26, arranged on the top surface, can be formed.

[0048] In a further step, the waveguide component 30 can be produced with at least one waveguide 38. The produced waveguide component 30 can be placed above the top surface of the printed circuit board 26 such that the waveguide(s) 38 are aligned with their respective associated RF antennas 12. After alignment, the waveguide component 30 can be mounted on the mounting surface of the printed circuit board 26.

[0049] Fig. Figure 12 shows a flowchart of a process for manufacturing an RF device according to the disclosure. For example, the process can be used to manufacture the RF device of Fig. 1 or one of the previously described semiconductor packages embedded in a printed circuit board. The method is presented in a general way to qualitatively describe aspects of the disclosure. The method can be extended to include one or more aspects described in connection with previously described examples according to the disclosure.

[0050] In 50, an RF chip can be embedded in an encapsulation material. In 52, a microwave component with an electrically conductive wall structure can be formed in the encapsulation material. In 54, an electrical redistribution layer can be formed over the RF chip and the encapsulation material. In 56, an RF antenna can be formed in the redistribution layer and over the microwave component.

[0051] Fig. Figure 13 schematically shows a cross-sectional side view of an RF device 1300 according to the disclosure. The RF device 1300 can, for example, be compared to the RF device 200 of the Fig. 2 are at least partially similar and, in comparison to this one, are reversed. In contrast to the HF device 200 of the Fig. 2. The RF device 1300 may be manufactured in a different way. In connection with the Fig. Section 11 described the order in which the layers of the printed circuit board 26 can be formed in the RF device 200. In comparison, the following applies to the RF device 1300: Fig. 13 the metal layers 32 and the dielectric layers 34 of the printed circuit board 26 are formed on top of each other in reverse order. Referring to the view of the Fig. 13. The layers of the printed circuit board 26 can be built up sequentially in the z-direction from bottom to top. First, the lowest dielectric layer 34C and the lowest metal layers 32B, 32C can be formed. The semiconductor package 28 can be mounted on the top surface of the lowest inner metal layer 32B and electrically coupled to it. Then, the semiconductor package 28 can be embedded in the printed circuit board 26 by forming the further layers of the printed circuit board 26. In the example of the Fig. 13 The RF device 1300 may have one or more additional electronic components 58 which may be mounted on the underside and / or top side of the circuit board 26.

[0052] Fig. Figure 14 schematically shows a cross-sectional side view of a multilayer injection-molded plastic 1400 with an integrated waveguide. For example, the waveguide components 30 of the previously described figures can be made of a similar injection-molded plastic. The injection-molded plastic 1400 can have a first layer arrangement 60 and a second layer arrangement 62. Each of the layer arrangements 60 and 62 can comprise one or more layers, for example, layers of a ceramic and / or dielectric material. The first layer arrangement 60 can have a horizontally extending recess 64, while the second layer arrangement 62 can have vertically extending through-holes 66. The layer arrangements 60 and 62 can be oriented relative to each other such that the recess 64 and the through-holes 66 form a continuous channel extending through the layer arrangements 60 and 62.The inner walls of this channel can be completely covered by a metallization 68. The channel with its metallized inner walls can thus form a waveguide through the layer arrangements 60 and 62.

[0053] The Fig. Figure 14 illustrates an example of a substantially horizontal path of a waveguide through a multilayer injection-molded plastic 1400. Only a portion of the injection-molded plastic 1400 is shown. The injection-molded plastic 1400 can have any number of additional layer arrangements, which can be structured and arranged one above the other in such a way that one or more waveguides with any combination of, in particular, horizontal and / or vertical sections can extend through the injection-molded plastic 1400. Any desired path of the waveguide(s) through the injection-molded plastic 1400 can be achieved by a suitable combination of horizontal and / or vertical sections. Examples

[0054] The following section explains high-frequency devices and associated manufacturing processes using examples.

[0055] Example 1 is a high-frequency device comprising: an encapsulation material; a high-frequency chip embedded in the encapsulation material, the high-frequency chip having a first principal surface and a second principal surface; an electrical redistribution layer arranged above the first principal surface of the high-frequency chip and the encapsulation material; a high-frequency antenna formed in the redistribution layer, configured to radiate signals in a direction from the second principal surface to the first principal surface and / or to receive signals in a direction from the first principal surface to the second principal surface; and a microwave component arranged below the high-frequency antenna and embedded in the encapsulation material, having an electrically conductive wall structure.

[0056] Example 2 is a high-frequency device according to Example 1, wherein the electrically conductive wall structure is formed by a multitude of metallized via holes.

[0057] Example 3 is a high-frequency device according to Example 1 or 2, wherein the microwave component forms a waveguide extending at least partially into the encapsulation material.

[0058] Example 4 is a high-frequency device according to one of the preceding examples, wherein the microwave component is an electromagnetic shield.

[0059] Example 5 is a high-frequency device according to one of the preceding examples, wherein the microwave component and the high-frequency antenna overlap at least partially in a top view of one of the main surfaces of the high-frequency chip.

[0060] Example 6 is a high-frequency device according to one of the preceding examples, wherein the microwave component extends from a first principal surface of the encapsulation material completely through the encapsulation material to a second principal surface of the encapsulation material.

[0061] Example 7 is a high-frequency device according to Example 6, further comprising: a metallization arranged on the second main surface of the encapsulation material, wherein the metallization forms a bottom surface of the microwave component.

[0062] Example 8 is a high-frequency device according to one of Examples 1 to 5, wherein the microwave component extends only partially into the encapsulation material from a first principal surface of the encapsulation material, the encapsulation material forming a bottom surface of the microwave component.

[0063] Example 9 is a high-frequency device according to one of Examples 1 to 5, wherein the microwave component extends only partially into the encapsulation material from a first main surface of the encapsulation material, and wherein a bottom surface of the microwave component is formed by an electrically conductive material.

[0064] Example 10 is a high-frequency device comprising: a printed circuit board; and a semiconductor package embedded in the printed circuit board comprising: an encapsulation material, a high-frequency chip embedded in the encapsulation material, an electrical redistribution layer arranged above the high-frequency chip and the encapsulation material, and a high-frequency antenna formed in the redistribution layer.

[0065] Example 11 is a high-frequency device according to Example 10, wherein the semiconductor device further comprises: a microwave component arranged below the high-frequency antenna and embedded in the encapsulation material, having an electrically conductive wall structure.

[0066] Example 12 is a high-frequency device according to Example 10 or 11, wherein the high-frequency antenna is designed to radiate and / or receive signals in a direction perpendicular to the redistribution layer.

[0067] Example 13 is a high-frequency device according to Example 10 or 11, wherein the high-frequency antenna is designed to radiate and / or receive signals in a direction parallel to the redistribution layer.

[0068] Example 14 is a high-frequency device according to any of Examples 10 to 13, further comprising: a waveguide component arranged above the printed circuit board, wherein the waveguide component comprises at least one waveguide, and wherein the high-frequency antenna is designed to radiate signals into the at least one waveguide and / or to receive signals via the at least one waveguide.

[0069] Example 15 is a high-frequency device according to Example 14, wherein the waveguide component is formed in a multi-layer injection-molded plastic and the at least one waveguide comprises a metallized waveguide formed in the injection-molded plastic.

[0070] Example 16 is a high-frequency device according to Example 14 or 15, wherein the waveguide component is mounted on a mounting surface of the printed circuit board and the mounting surface is mechanically contacted.

[0071] Example 17 is a high-frequency device according to one of Examples 14 to 16, wherein the at least one waveguide and the high-frequency antenna overlap at least partially in a top view of a main surface of the high-frequency chip.

[0072] Example 18 is a high-frequency device comprising: a printed circuit board; a high-frequency chip embedded in the printed circuit board without a housing; and a high-frequency antenna arranged on the high-frequency chip.

[0073] Example 19 is a high-frequency device according to Example 18, further comprising: a waveguide component arranged above the printed circuit board, wherein the waveguide component comprises at least one waveguide, and wherein the high-frequency antenna is designed to radiate signals into the at least one waveguide and / or to receive signals via the at least one waveguide.

[0074] Example 20 is a method for manufacturing a high-frequency device, wherein the method comprises: manufacturing a semiconductor device comprising: a high-frequency chip, and a high-frequency antenna arranged in the semiconductor device; and embedding the manufactured semiconductor device in a printed circuit board.

[0075] Example 21 is a method according to Example 20, wherein the fabrication of the semiconductor device further comprises: embedding the high-frequency chip in an encapsulation material, forming an electrical redistribution layer over the high-frequency chip and the encapsulation material, and forming the high-frequency antenna in the redistribution layer.

[0076] Example 22 is a method according to Example 21, further comprising: forming holes in the printed circuit board, wherein a conductor layer of the redistribution layer is exposed; and filling the holes with an electrically conductive material, wherein the electrically conductive material electrically contacts the conductor layer.

[0077] Example 23 is a method according to Example 22, wherein the formation of the holes includes a laser process, wherein the laser process is stopped by the conductor layer of the redistribution layer.

[0078] Example 24 is a method according to one of Examples 20 to 23, further comprising: producing a waveguide component with at least one waveguide; aligning the at least one waveguide with the high-frequency antenna; and mounting the waveguide component on a mounting surface of the printed circuit board.

[0079] Example 25 is a method for manufacturing a high-frequency device, the method comprising: embedding a high-frequency chip in an encapsulation material; forming a microwave component with an electrically conductive wall structure in the encapsulation material; forming an electrical redistribution layer over the high-frequency chip and the encapsulation material; and forming a high-frequency antenna in the redistribution layer and over the microwave component.

[0080] For the purposes of this description, the terms "connected," "coupled," "electrically connected," and / or "electrically coupled" do not necessarily imply that components must be directly connected or coupled to one another. Intermediate components may exist between the "connected," "coupled," "electrically connected," or "electrically coupled" components.

[0081] Furthermore, the words "over" and "on," used, for example, in reference to a material layer that is formed "over" or "on" a surface of an object, or is located "over" or "on" it, can be used in this description to mean that the material layer is arranged (e.g., formed, deposited, etc.) "directly on," for example, in direct contact with, the surface in question. The words "over" and "on," used, for example, in reference to a material layer that is formed or arranged "over" or "on" a surface, can also be used in this text to mean that the material layer is arranged (e.g., formed, deposited, etc.) "indirectly on" the surface in question, with, for example, one or more additional layers located between the surface in question and the material layer.

[0082] Insofar as the terms "have," "contain," "exhibit," "with," or variants thereof are used either in the detailed description or the claims, these terms shall be understood as inclusive in a similar way to the term "comprise." This means that, for the purposes of this description, the terms "have," "contain," "exhibit," "with," "comprise," and the like are open terms that indicate the presence of the elements or features mentioned, but do not exclude any other elements or features. The articles "a" or "the" shall be understood to include both the plural and singular meanings, unless the context clearly suggests otherwise.

[0083] Furthermore, the word "exemplary" is used in this text to mean that it serves as an example, a case, or an illustration. An aspect or design described as "exemplary" in this text is not necessarily to be understood as having advantages over other aspects or designs. Rather, the use of the word "exemplary" is intended to represent concepts in a concrete way. For the purposes of this application, the term "or" does not mean an exclusive "or," but an inclusive "or." That is, unless otherwise stated or the context does not permit any other interpretation, "X uses A or B" means any of the natural inclusive permutations. That is, if X uses A, X uses B, or X uses both A and B, then "X uses A or B" is satisfied in each of the above cases.Furthermore, the articles “one / a / an” within the meaning of this application and the accompanying claims may generally be interpreted as “one or more”, unless expressly stated or clearly evident from the context that only a singular form is meant. Moreover, “at least one of A or B or the like” generally means A or B or both A and B.

[0084] This description details devices and methods for manufacturing devices. Notes made in connection with a described device may also apply to a corresponding method, and vice versa. For example, if a specific component of a device is described, a corresponding method for manufacturing the device may include an action for providing the component in a suitable manner, even if such an action is not explicitly described or illustrated in the figures. Furthermore, the features of the various exemplary aspects described in this text may be combined unless expressly stated otherwise.

[0085] Furthermore, even if a particular feature of the disclosure has been disclosed with reference to only one of several different implementations, such a feature can be combined with one or more other features of the other implementations as is desired and advantageous for a given or particular application.

Claims

[1] High-frequency device comprising: an encapsulation material (2); a high-frequency chip (4) embedded in the encapsulation material (2), wherein the high-frequency chip (4) has a first principal area (6) and a second principal area (8); an electrical redistribution layer (10) arranged above the first main surface (6) of the high-frequency chip (4) and the encapsulation material (2); a high-frequency antenna (12) formed in the redistribution layer (10), designed to radiate signals in a direction from the second main surface (8) to the first main surface (6) and / or to receive signals in a direction from the first main surface (6) to the second main surface (8); and a microwave component (14) arranged below the high-frequency antenna (12) and embedded in the encapsulation material (2) with an electrically conductive wall structure (22), wherein the microwave component (14) extends only partially into the encapsulation material (2) from a first main surface of the encapsulation material (2), the encapsulation material (2) forming a bottom surface of the microwave component (14). [2] High-frequency device according to claim 1, wherein the electrically conductive wall structure (22) is formed by a plurality of metallized via holes. [3] High-frequency device according to claim 1 or 2, wherein the microwave component (14) forms a waveguide extending at least partially into the encapsulation material (2). [4] High-frequency device according to one of the preceding claims, wherein the microwave component (14) is an electromagnetic shield. [5] High-frequency device according to one of the preceding claims, wherein the microwave component (14) and the high-frequency antenna (12) overlap at least partially in a top view of one of the main surfaces of the high-frequency chip (4). [6] Method for manufacturing a high-frequency device, the method comprising: Embedding a high-frequency chip (4) in an encapsulation material (2); Forming a microwave component (14) with an electrically conductive wall structure (22) in the encapsulation material (2), wherein the microwave component (14) extends only partially into the encapsulation material (2) from a first main surface of the encapsulation material (2), the encapsulation material (2) forming a bottom surface of the microwave component (14); Forming an electrical redistribution layer (10) over the radio frequency chip (4) and the encapsulation material (2); and Forming a high-frequency antenna (12) in the redistribution layer (10) and above the microwave component (14). [7] High-frequency device comprising: an encapsulation material (2); a high-frequency chip (4) embedded in the encapsulation material (2), wherein the high-frequency chip (4) has a first principal area (6) and a second principal area (8); an electrical redistribution layer (10) arranged above the first main surface (6) of the high-frequency chip (4) and the encapsulation material (2); a high-frequency antenna (12) formed in the redistribution layer (10), designed to radiate signals in a direction from the second main surface (8) to the first main surface (6) and / or to receive signals in a direction from the first main surface (6) to the second main surface (8); and a microwave component (14) arranged below the high-frequency antenna (12) and embedded in the encapsulation material (2) with an electrically conductive wall structure (22), wherein the microwave component (14) forms a waveguide extending at least partially into the encapsulation material (2), wherein the microwave component (14) extends from a first principal surface of the encapsulation material (2) completely through the encapsulation material (2) to a second principal surface of the encapsulation material (2). [8] High-frequency device according to claim 7, further comprising: a metallization (24) arranged on the second main surface of the encapsulation material (2), wherein the metallization (24) forms a bottom surface of the microwave component (14).

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