Semiconductor module and power conversion device

Abstract

Semiconductor module (1), comprising: - an insulating heat dissipation foil (12); - a semiconductor device (13-16) provided on the heat dissipation film (12); - a lead frame (8, 9) comprising a lead terminal (8a, 9a) and a die pad (8b, 9b) which are integrally formed; - a wire (20, 22) connecting the lead frame (8, 9) to the semiconductor device (13-16) and forming a main current path; and - a molding resin (6) sealing the heat dissipation film (12), the semiconductor device (13-16), the lead frame (8, 9) and the wire (20, 22), where: - the supply connection (8a, 9a) is led out of the molded resin (6), - the heat dissipation foil (12) is in direct contact with an underside of the die pad (8b, 9b), - the wire (20, 22) is bonded to the die pad (8b, 9b) directly above a contact part provided between the die pad (8b, 9b) and the heat dissipation foil (12), - a semiconductor device (13, 14) is formed on a low-voltage side connected to a low-voltage side of the semiconductor device (13-16); - a lead frame (8) is formed on a low side, which is connected via a wire (20, 22) to the semiconductor device (13, 14) on the low voltage side, and - a bottom surface of the lead frame (8) on the low side is not covered with the heat dissipation film (12) and is exposed from the molding resin (6).

Description

Background of the inventionArea

[0001] The present disclosure relates to a semiconductor module and a power conversion device. background

[0002] In semiconductor modules, semiconductor devices and lead terminals are connected via wires. In recent years, chip shrinkage has been achieved at an increasing rate, resulting in high-performance power semiconductor devices starting from SiC MOS chips. This also limits the number of wires. As the number of wires decreases, the amount of heat generated by the wires during module operation increases. This induces temperature rises in the lead terminals and the associated external circuit boards. Therefore, there is a problem that the cooling costs for end users increase.

[0003] As a technique for solving this problem, a configuration is proposed in which a relay electrode is provided on a heat dissipation film and a wire and a lead terminal are connected to the relay electrode (e.g., see JP 6024750 B2 ( Fig. 1B). This makes it possible to dissipate heat generated in the wire during module operation via the relay electrode and the heat dissipation foil.

[0004] US 2015 / 0 102 474 A1 relates to a semiconductor device comprising a plurality of chip carrier sections, a plurality of semiconductor chips each arranged in each of the chip carrier sections, a resin encapsulation section having a recess portion for exposing at least a portion of the chip carrier sections, the resin encapsulation section being configured to cover the chip carrier sections and the semiconductor chips, and a heat radiation layer arranged in the recess portion. The heat radiation layer has an elastic layer exposed in a direction in which the recess portion is opened. The heat radiation layer directly faces at least a portion of the chip carrier sections. The elastic layer overlaps with at least a portion of the chip carrier sections as viewed in the thickness direction of the heat radiation layer.

[0005] JP 2015-135907 A shows a document D1 discloses a power semiconductor device in which contact between a thin metal wire and a lead frame is scarce and which can improve yield, and a method for manufacturing such a power semiconductor device. A power semiconductor element is mounted on a power chip pad. A control semiconductor element for controlling the power semiconductor element is mounted on a control chip pad arranged at a position higher than the power chip pad. The power semiconductor element and the control semiconductor element are electrically connected by a thin metal wire. The power chip pad is arranged below the thin metal wire and has a bent portion that is bent upward.The power chip pad, control chip pad, power semiconductor element, control semiconductor element, and thin metal wire are placed in a cavity consisting of an upper and lower mold, and sealed with resin. The resin is injected from the power chip pad side to the control chip pad side. Summary

[0006] However, the addition of the relay electrode increases the number of parts and the number of production steps, increasing production costs. Therefore, it has been difficult to use the conventional configuration for products requiring mass production.

[0007] The present invention has been implemented to solve the above problem, and it is an object of the present invention to provide a semiconductor module and a power conversion device that can improve heat dissipation and reduce manufacturing costs.

[0008] The object underlying the invention is achieved in a semiconductor module according to the invention with the features of claim 1 and in a power conversion device according to the invention with the features of claim 7. Advantageous further developments are the subject of the respective dependent claims.

[0009] A semiconductor device according to the present disclosure includes: an insulating heat dissipation film; a semiconductor device provided on the heat dissipation film; a lead frame including a lead terminal and a die pad formed integrally; a wire connecting the lead frame to the semiconductor device and forming a main current path; and a molding resin sealing the heat dissipation film, the semiconductor device, the lead frame, and the wire, wherein the lead terminal is led out from the molding resin, the heat dissipation film is in direct contact with a bottom surface of the die pad, and the wire is bonded to the die pad directly above a contact part provided between the die pad and the heat dissipation film. Further, a semiconductor device is formed on a low-voltage side connected to a low-voltage side of the semiconductor device.Furthermore, a lead frame is formed on a low side, which is connected to the semiconductor device on the low voltage side via a wire. A bottom surface of the lead frame on the low side is not covered with the heat dissipation film and is exposed from the molding resin.

[0010] In the present disclosure, the heat dissipation sheet is in direct contact with a bottom surface of the die pad, and the wire is bonded to the die pad directly above a contact portion provided between the die pad and the heat dissipation sheet. Since heat generated in the wire during module operation is dissipated via the heat dissipation sheet, heat dissipation can be improved. Furthermore, there is no need to add new parts for heat dissipation of the wire. This makes it possible to reduce the number of parts, the number of production steps, and the production cost.

[0011] Other and further objects, features and advantages of the invention will become more fully apparent from the following description. Short description of drawings Fig. 1 is a cross-sectional view illustrating a state in which a semiconductor module according to a first embodiment for explaining the technical background of the present invention is mounted. Fig. 2 is a plan view illustrating an internal configuration of the semiconductor module according to the first embodiment for explaining the technical background of the present invention. Fig. 3 is a partially enlarged plan view of Fig. 2. Fig. 4 is a cross-sectional view along the output side lead frame in the internal configuration in Fig. 3. Fig. 5 is a cross-sectional view along the N-side lead frame in the internal configuration in Fig. 3. Fig. 6 is a partially enlarged plan view of an internal configuration of a semiconductor module according to a comparative example. Fig. 7 is a cross-sectional view along an output-side lead frame in the internal configuration in Fig. 6. Fig. Figure 8 is a cross-sectional view along an N-side lead frame in the internal configuration in Fig. 6. Fig. 9 is a partially enlarged plan view of an internal configuration of a modification of the semiconductor module according to the first embodiment for explaining the technical background of the present invention. Fig. 10 is a cross-sectional view illustrating a semiconductor module according to a second embodiment for explaining the technical background of the present invention. Fig. 11 is a cross-sectional view illustrating a semiconductor module according to a third embodiment of the present invention. Fig. 12 is a cross-sectional view illustrating a modification of the semiconductor module according to an embodiment for explaining the technical background of the present invention. Fig. 13 is a cross-sectional view illustrating a semiconductor module according to a fourth embodiment for explaining the technical background of the present invention. Fig. 14 is a perspective view illustrating a state in which distal end portions of the lead terminal are inserted into through holes of the circuit board. Fig. 15 is a perspective view illustrating a state in which distal end portions of the lead terminal are inserted into through holes of the circuit board. Fig. 16 is a perspective view illustrating a state in which distal end portions of the lead terminal are inserted into through holes of the circuit board. Fig. 17 is a cross-sectional view illustrating a semiconductor module according to a fifth embodiment for explaining the technical background of the present invention. Fig. 18 is a block diagram illustrating an electric power conversion device according to the sixth embodiment for explaining the technical background of the present invention. Description of embodiments

[0012] A semiconductor module and a power conversion device according to embodiments for explaining the technical background of the present invention and the embodiment of the present invention will be described with reference to the drawings. The same components are denoted by the same symbols, and repeated descriptions thereof will be omitted. First embodiment of the technical background

[0013] Fig. 1 is a cross-sectional view illustrating a state in which a semiconductor module according to a first embodiment for explaining the technical background of the present invention is mounted. A semiconductor module 1 is mounted over a heat sink 2 having a radiating fin via a thermal grease 3. A circuit board 4 is arranged over the semiconductor module 1. A lead terminal 5 of the semiconductor module 1 protrudes from a molded resin 6, is inserted into a through-hole 7 of the circuit board 4, and is connected to a circuit of the circuit board 4.

[0014] Fig. 2 is a plan view illustrating an internal configuration of the semiconductor module according to the first embodiment for explaining the technical background of the present invention. Fig. 3 is a partially enlarged plan view of Fig. 2. Three N-side lead frames 8, three output-side lead frames 9, one P-side lead frame 10, and control-side lead frames 11 are provided. These lead frames were cut from a metal plate in a single manufacturing step and form a single interconnected lead frame. Therefore, the material and thickness of these lead frames are the same.

[0015] The N-side lead frames 8, the output-side lead frames 9, and the P-side lead frame 10 are provided on an insulating heat dissipation film 12. N-side three-phase semiconductor devices 13 and 14 are bonded to the three output-side lead frames 9, respectively, by the die bonding method. P-side three-phase semiconductor devices 15 and 16 are bonded to a P-side lead frame 10 by the die bonding method. For example, the N-side semiconductor devices 13 and the P-side semiconductor devices 15 are IGBTs, and the N-side semiconductor devices 14 and the P-side semiconductor devices 16 are reflux diodes. The N-side semiconductor devices 15 are connected to low-voltage sides of the P-side semiconductor devices 13. Control ICs 17 and 18 are connected to the control-side lead frames 11.

[0016] Electrodes at the top of the N-side semiconductor devices 13 and 14 are connected via wires 19, and electrodes at the bottom are connected to the output-side lead frames 9. The electrodes at the top of the N-side semiconductor devices 14 are connected to the N-side lead frames 8 via wires 20. The electrodes at the top of the P-side semiconductor devices 15 and 16 are connected to each other via wires 21, and the electrodes at the bottom are connected to the P-side lead frame 10. The electrodes at the top of the P-side semiconductor devices 16 are connected to the output-side lead frames 9 via wires 22. Control electrodes of the N-side semiconductor devices 13 are connected to the control IC 17 via wires 23. Control electrodes of the P-side semiconductor devices 15 are connected to the control IC 18 via wires 24.

[0017] Fig. 4 is a cross-sectional view along the output side lead frame in the internal configuration in Fig. 3. The output-side lead frame 9 includes a lead terminal 9a and a die pad 9b, which are integrally formed. The heat dissipation film 12 is in direct contact with a bottom surface of the die pad 9b. The wire 22 is bonded to the die pad 9b directly above a contact portion provided between the die pad 9b and the heat dissipation film 12.

[0018] Fig. 5 is a cross-sectional view along the N-side lead frame in the internal configuration in Fig. 3. The N-side lead frame 8 includes a lead terminal 8a and a die pad 8b, which are integrally formed. The heat dissipation film 12 is in direct contact with a bottom surface of the die pad 8b. The wire 20 is bonded to the die pad 8b directly above a contact portion provided between the die pad 8b and the heat dissipation film 12. The wires 20 and 22 form main current paths through which a large main current flows during module operation.

[0019] The mold resin 6 seals the heat dissipation film 12, the N-side semiconductor devices 13 and 14, the P-side semiconductor devices 15 and 16, the N-side lead frames 8, the output-side lead frames 9, the P-side lead frame 10, the control-side lead frames 11, and the wires 19 to 24. The lead terminals 8a of the N-side lead frames 8, the lead terminals 9a of the output-side lead frames 9, the lead terminal of the P-side lead frame 10, and the lead terminals of the control lead frames 11 are led out of the mold resin 6. The lead terminals 8a and 9a correspond to the lead terminal 5 in Fig. 1.

[0020] Next, effects of the present embodiment will be described in comparison with comparative examples to explain the technical background of the present invention. Fig. 6 is a partially enlarged plan view of an internal configuration of a semiconductor module according to a comparative example. Fig. 7 is a cross-sectional view along an output-side lead frame in the internal configuration in Fig. 6. Fig. Figure 8 is a cross-sectional view along an N-side lead frame in the internal configuration in Fig. 6. The output-side lead frame 9 connected to the P-side semiconductor device 16 via the wire 22 is also in close contact with the heat dissipation film 12 in the comparative example. However, the N-side lead frame 8 connected to the N-side semiconductor device 14 via the wire 20 is not in close contact with the heat dissipation film 12. The wire 20 is bonded to the lead terminal 8a of the N-side lead frame 8, which is not in contact with the heat dissipation film 12. The wire 22 is bonded to the lead terminal 9a of the output-side lead frame 9, which is not in contact with the heat dissipation film 12. Therefore, heat generated in the wires 20 and 22 during module operation cannot be dissipated via the heat dissipation film 12.

[0021] In contrast, in the present embodiment, the bottom surface of the die pad 8b of the N-side lead frame 8 and the bottom surface of the die pad 9b of the output-side lead frame 9 are in direct contact with the heat dissipation film 12 on the same plane without any adhesive or the like. The die pads 8b and 9b and the heat dissipation film 12 are brought into close contact by sealing them with the molding resin 6. The wire 20, which will become a main current path, is bonded to the die pad 8b directly above the contact part provided between the die pad 8b of the N-side lead frame 8 and the heat dissipation film 12. The wire 22, which will become a main current path, is bonded to the die pad 9b directly above the contact part between the die pad 9b of the output-side lead frame 9 and the heat dissipation film 12.

[0022] Since heat generated in the wires 20 and 22 during module operation can be dissipated to the heat sink 2 via the heat dissipation film 12, heat dissipation can be improved. Therefore, it is possible to suppress heat transfer to the lead wires 8a and 9a, suppress temperature increases in the lead wires 8a and 9b and the external circuit board 4 after assembly, and keep the cooling cost of the system low.

[0023] Furthermore, the above configuration can be used for a mold-type semiconductor module using a single lead frame, and there is no need to add new parts for heat dissipation of the wires 20 and 22. This makes it possible to reduce the number of parts, the number of production steps, and the manufacturing cost, and the embodiment is therefore applicable to products requiring mass production.

[0024] The N-side lead frame 8 has a height difference between the lead terminal 8a and the die pad 8b. This allows the heat dissipation film 12 and a heat dissipation plate (not shown) provided underneath to be thinner, which can improve the thermal resistance of the module. The same applies to the configuration of the output-side lead frame 9.

[0025] Fig. 9 is a partially enlarged plan view of an internal configuration of a modification of the semiconductor module according to the first embodiment for explaining the technical background of the present invention. Fig. Figure 3 shows a three-shunt configuration in which three N-side lead frames 8 are connected to the three-phase semiconductor devices 14 via the wires 20. In contrast, Fig. 9 shows a configuration with a shunt resistor, in which an N-side lead frame 8 is connected to the three-phase semiconductor devices 14 via the wires 20, respectively. The N-side lead frames for three phases are combined, the area of ​​the N-side lead frames 8 thereby increases, the radiation performance improves, and temperature rises of the lead terminal 8a of the N-side lead frame 8 can be suppressed. Second embodiment of the technical background

[0026] Fig. 10 is a cross-sectional view illustrating a semiconductor module according to a second embodiment for explaining the technical background of the present invention. The N-side lead frame 8 includes a connection part 8c provided between the lead terminal 8a and the die pad 8b and having a smaller cross-sectional area than those of the lead terminal 8a and the die pad 8b. This causes the thermal resistance between the die pad 8b, to which the wire 20 is bonded, and the lead terminal 8a to increase, and can thereby further suppress heat transfer to the lead terminal 8b side. Note that the connection part 8c may have a linear shape or a curved shape. Similar effects can also be obtained even if a connection part is provided in the output-side lead frame 9. Third and inventive embodiment

[0027] Fig. 11 is a cross-sectional view illustrating a semiconductor module according to a third embodiment of the present invention. The heat dissipation sheet 12 is in close contact with the bottom surfaces of the output-side lead frame 9 and the P-side lead frame 10. On the other hand, the bottom surface of the N-side lead frame 8 is not covered with the heat dissipation sheet 12. The bottom surface of the heat dissipation sheet 12 and the bottom surface of the N-side lead frame 8 are exposed from the molding resin 6 and are flush with each other. During module assembly, the exposed bottom surfaces of the heat dissipation sheet 12 and the N-side lead frame 8 are in close contact with the heat sink 2. Here, in the configuration of the first embodiment, it is necessary to expand the area of ​​the heat dissipation sheet 12 rather than the area in the comparative example.In contrast, in the present embodiment, since the required area of ​​the heat dissipation sheet 12 can be made smaller than that in the first embodiment, manufacturing costs can be reduced.

[0028] Fig. 12 is a cross-sectional view illustrating a modification of the semiconductor module according to an embodiment for explaining the technical background of the present invention. An insulating member 25 is applied to the underside of the N-side lead frame 8. Note that the insulating member 25 is preferably made of silicone paste or the like having excellent heat resistance and cold resistance. When the semiconductor module 1 is mounted on the heat sink 2, since the insulating member 25 is located between the N-side lead frame 8 and the heat sink 2, insulation of both parts can be ensured. Therefore, the present modification is also applicable to applications requiring insulation between the inside and outside of the module. Fourth embodiment of the technical background

[0029] Fig. 13 is a cross-sectional view illustrating a semiconductor module according to a fourth embodiment for explaining the technical background of the present invention. A distal end portion of the lead terminal 5, which is led out of the mold resin 6, is thicker than the root of the lead terminal 5.

[0030] The distal end portion of the lead terminal 5 is inserted into a through-hole 7 of the circuit board 4 during system assembly and fixed by soldering. During module operation, heat generated in the lead terminal 5 is transferred to the circuit board 4. In contrast, in the present embodiment, the volume of the lead terminal 5 increases and the heat dissipation ability improves, and thereby it is also possible to suppress temperature increases in the lead terminal 5 and the circuit board 4.

[0031] Fig. 14 to Fig. 16 are perspective views illustrating a state in which distal end portions of the lead terminal are inserted into through holes of the circuit board. A plurality of lead terminals 5 are arranged in the X direction. Fig. 14, the thickness of the distal end portion of the lead terminal 5 is not large. The thickness of the lead terminal 5 can be increased in both X and Y directions. However, if the thickness of the lead terminal 5 is increased as shown in Fig. 16 is increased in the X direction, the distance between the lead terminals 5 is reduced, which may cause an insulation failure. Therefore, the thickness is as shown in Fig. 15 shown preferably enlarged in the Y direction. Fifth embodiment of the technical background

[0032] Fig. 17 is a cross-sectional view illustrating a semiconductor module according to a fifth embodiment of the present invention. A metallic boss 26 is bonded to the distal end portion of the lead terminal 5, which is led out of the mold resin 6. Effects similar to those of the fourth embodiment can also be obtained by attaching the external boss 26 to the lead terminal 5 and increasing the thickness of the terminal. The boss 26 is made of various metallic raw materials to ensure conductivity between the lead terminal 5 and the circuit board 4.

[0033] The semiconductor devices 13-16 are not limited to devices made of silicon, but may instead be made of a wide-bandgap semiconductor having a larger bandgap than that of silicon. The wide-bandgap semiconductor is, for example, silicon carbide, a gallium nitride-based material, or diamond. A semiconductor device made of such a wide-bandgap semiconductor has high withstand voltage and high allowable current density and can thus be miniaturized. The use of such a miniaturized semiconductor device enables miniaturization and high integration of the semiconductor module in which the semiconductor device is integrated.Furthermore, since the semiconductor device has high heat resistance, a radiating fin of a heat sink can be miniaturized, and a water-cooled part can be air-cooled, leading to further miniaturization of the semiconductor module. Furthermore, since the semiconductor device has low power loss and high efficiency, a highly efficient semiconductor module can be achieved. Sixth embodiment of the technical background

[0034] In this embodiment, the semiconductor modules according to the above-described embodiments are applied to an electric power conversion device. Although the present disclosure is not limited to a specific electric power conversion device, a case where the present disclosure is applied to a three-phase inverter as the sixth embodiment will be described below.

[0035] Fig. Figure 18 is a block diagram illustrating an electric power conversion device according to the sixth embodiment for explaining the technical background of the present invention. This electric power conversion system includes a power supply 27, a semiconductor module 1, an inductive load 28, a control circuit 29, and a heat sink 2. The control circuit 29 corresponds to the circuit board 4 in Fig.1. The power supply 27 is a DC power supply and supplies DC power to the semiconductor module 1. The power supply 27 may consist of various components. For example, the power supply 27 may consist of a DC system, a solar cell, or a storage battery, or may consist of a rectifier or an AC / DC converter connected to an AC system. Alternatively, the power supply 27 may consist of a DC / DC converter that converts DC power output from a DC system into a predetermined power.

[0036] The semiconductor module 1 is a three-phase inverter connected between the power supply 27 and the inductive load 28, converts DC power supplied by the power supply 27 into AC power, and supplies the AC power to the inductive load 28.

[0037] The inductive load 28 is a three-phase electric motor driven by AC power provided by the semiconductor module 1. The inductive load 28 is not limited to a specific application. The load is used as an electric motor mounted on various electrical devices, such as an electric motor for, for example, a hybrid vehicle, an electric vehicle, a rail vehicle, an elevator, or an air conditioner.

[0038] The semiconductor module 1 will be described in detail below. The semiconductor module 1 is a main conversion circuit including a switching device and a reflux diode (not illustrated). When the switching device is switched, the semiconductor module 1 converts DC power supplied from the power supply 27 into AC power and supplies the AC power to the inductive load 28. The semiconductor module 1 can have various types of specific circuit configurations. The semiconductor module 1 according to this embodiment is a three-phase, two-level full-bridge circuit, which can be composed of six switching devices and six reflux diodes connected in anti-parallel to the respective switching devices. Any two switching devices of the six switching devices are connected in series to form a vertical arm. Each vertical arm forms a phase (U-phase, V-phase, W-phase) of the full-bridge circuit.Output terminals of each vertical arm, ie, three output terminals of the semiconductor module 1, are connected to the inductive load 28. The semiconductor module 1 is composed of a semiconductor module corresponding to one of the first to fifth embodiments described above.

[0039] The control IC incorporated in the semiconductor module 1 generates a drive signal for driving a switching device also incorporated in the semiconductor module 1. Specifically, the control IC outputs, to the control electrode of each switching device, a drive signal for turning on each switching device and a drive signal for turning off each switching device according to the control signal output from the control circuit 29, which will be described later. When the ON state of each switching device is maintained, the drive signal is a voltage signal (ON signal) with a voltage equal to or higher than a threshold voltage of the switching device. When the OFF state of each switching device is maintained, the drive signal is a voltage signal (OFF signal) with a voltage equal to or lower than the threshold voltage of the switching device.

[0040] The control circuit 29 controls each switching device of the semiconductor module 1 so as to supply a desired power to the inductive load 28. Specifically, the control circuit 29 calculates a period (ON period) in which each switching device of the semiconductor module 1 is in the ON state based on the power to be supplied to the inductive load 28. For example, the semiconductor module 1 can be controlled by PWM control to modulate the ON period of each switching device depending on the voltage to be output. Furthermore, the control circuit 29 outputs a control command (control signal) to the control IC included in the semiconductor module 1 so that, at any given time, the ON signal is output to each switching device to be turned on and an OFF signal is output to each switching device to be turned off.The control IC outputs the ON signal or the OFF signal as the drive signal according to the control signal to the control electrode of each switching device.

[0041] The heat sink 2 dissipates heat generated by driving the semiconductor module 1 to the outside. Specifically, a bonding paste is applied between the heat sink 2 and the semiconductor module 1, and the heat generated by the semiconductor module 1 is dissipated to the outside by utilizing the heat conduction of the heat sink 2 and the bonding paste. The heat sink 2 can be attached to only one side of the semiconductor module 1 or can be attached to both sides.

[0042] In the electric power conversion device according to this embodiment, the semiconductor modules according to the first to fifth embodiments are used. Accordingly, the size and cost of the electric power converter can be reduced, and the reliability of operation can be improved.

[0043] While this embodiment illustrates an example in which the present disclosure is applied to a three-phase, two-level inverter, the present disclosure is not limited to this and can be applied to various electric power conversion devices. Although this embodiment illustrates a two-level electric power conversion device, the present disclosure can also be applied to an electric power conversion device having three or more levels. When power is supplied to a single-phase load, the present disclosure can be applied to a single-phase inverter. The present disclosure can also be applied to a DC / DC converter or an AC / DC converter when power is supplied to a DC load or the like.

[0044] Furthermore, in the electric power conversion device to which the present disclosure is applied, the above-mentioned load is not limited to an electric motor. For example, the load can also be used as a power supply device for an electric discharge machine, a laser beam machine, an induction heating cooking device, or a non-contact power supply system for an appliance. Alternatively, the electric power conversion device can also be used as a power conditioner for a photovoltaic power generation system, an electricity storage system, or the like.

Claims

[1] Semiconductor module (1), comprising: - an insulating heat dissipation foil (12); - a semiconductor device (13-16) provided on the heat dissipation film (12); - a lead frame (8, 9) comprising a lead terminal (8a, 9a) and a die pad (8b, 9b) which are integrally formed; - a wire (20, 22) connecting the lead frame (8, 9) to the semiconductor device (13-16) and forming a main current path; and - a molding resin (6) sealing the heat dissipation film (12), the semiconductor device (13-16), the lead frame (8, 9) and the wire (20, 22), where: - the supply connection (8a, 9a) is led out of the molded resin (6), - the heat dissipation foil (12) is in direct contact with an underside of the die pad (8b, 9b), - the wire (20, 22) is bonded to the die pad (8b, 9b) directly above a contact part provided between the die pad (8b, 9b) and the heat dissipation foil (12), - a semiconductor device (13, 14) is formed on a low-voltage side connected to a low-voltage side of the semiconductor device (13-16); - a lead frame (8) is formed on a low side, which is connected via a wire (20, 22) to the semiconductor device (13, 14) on the low voltage side, and - a bottom surface of the lead frame (8) on the low side is not covered with the heat dissipation film (12) and is exposed from the molding resin (6). [2] Semiconductor module (1) according to claim 1, wherein the lead frame (8, 9) has a height difference between the lead terminal (8a, 9a) and the die pad (8b, 9b). [3] The semiconductor module (1) according to claim 1 or 2, further comprising an insulating member (25) different from the heat dissipation film (12) and attached to the underside of the lead frame (8) on the low side. [4] A semiconductor module (1) according to any one of the preceding claims, wherein a distal end part of the lead terminal (8a, 9a) led out of the molding resin (6) is thicker than a root of the lead terminal (8a, 9a). [5] The semiconductor module (1) according to any one of claims 1 to 3, further comprising a metallic attachment (26) connected to a distal end portion of the lead terminal (8a, 9a) led out of the molding resin (6). [6] A semiconductor module (1) according to any one of the preceding claims, wherein the semiconductor device (13-16) is made of a wide band gap semiconductor. [7] Power conversion device, comprising: - a semiconductor module (1) according to one of the preceding claims, which is designed to convert fed-in power and output converted power; - a control circuit (29) which is designed to output a control signal for controlling the semiconductor module (1) to the semiconductor module (1); and - a heat sink (2) designed to dissipate heat from the semiconductor module (1).

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