Optoelectronic semiconductor device and method for manufacturing an optoelectronic semiconductor device

Abstract

Optoelectronic semiconductor device (1), comprising - a semiconductor body (10) with a first injection area (100) in which a first protective area (101) is formed, a second injection area (200) in which a second protective area (201) is formed and an active area (300) configured to generate electromagnetic radiation, which is arranged between the first injection area (100) and the second injection area (200), wherein - the first injection area (100) and the first protection area (101) exhibit a first conductivity type, - the second injection area (200) and the second protection area (201) have a second conductivity type - the dopant concentration in the first protection zone (101) is higher than in the first injection zone (100), - a dopant concentration in the second protection area (201) is higher than in the second injection area (200), - the second protection area (201) is located on a side of the second injection area (200) facing away from the active area (300), - the first protection area (101) extends along a side surface (10A) of the semiconductor body (10) from a side of the first injection area (100) facing away from the active area (300) to the second injection area (200) and completely penetrates the active area (300), - a shielding area (400) is arranged between the first protection area (101) and the second protection area (201), and - the shielding area (400) has a lower proportion of aluminum than the second injection area (200).

Description

[0001] An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are described.

[0002] The optoelectronic semiconductor device is designed in particular for the generation and / or detection of electromagnetic radiation, preferably light perceptible to the human eye.

[0003] Optoelectronic semiconductor devices and methods for manufacturing an optoelectronic semiconductor device are already known from documents US 10 396 241 B1, US 2016 / 0 315 218 A1, US 2013 / 0 050 656 A1 and CN 108 878 612 A.

[0004] One task to be solved is to specify an optoelectronic semiconductor device that exhibits improved efficiency.

[0005] Another task to be solved is to specify a method for the simplified production of an optoelectronic semiconductor device with improved efficiency.

[0006] The optoelectronic semiconductor device comprises a semiconductor body with a first injection area in which a first protection area is formed, and a second injection area in which a second protection area is formed.

[0007] The semiconductor body comprises, in particular, a plurality of epitaxially grown layers of a semiconductor material. The layers are deposited on top of each other in a stacking direction. This stacking direction thus runs transversely, and in particular perpendicularly, to a principal extension direction of the semiconductor body. For example, the semiconductor body is a monolithic semiconductor crystal.

[0008] The first injection region is an area of ​​the semiconductor body designed for the injection of charge carriers. For example, holes are injected into the semiconductor body via the first injection region. The first protection region is formed within the first injection region. Specifically, the first injection region is an area of ​​the semiconductor body into which a first dopant material is introduced.

[0009] The second injection region is another area of ​​the semiconductor body designed for the injection of charge carriers. For example, electrons are injected into the semiconductor body via the second injection region. The second protection region is formed within the second injection region. Specifically, the second injection region is another area of ​​the semiconductor body into which a second dopant material is introduced.

[0010] By means of the first protection zone and the second protection zone, a preferred distribution of charge carrier density can be generated in the semiconductor body during the operation of the optoelectronic semiconductor device.

[0011] Furthermore, the semiconductor body includes an active region designed to generate electromagnetic radiation, which is located between the first and second injection regions. The active region features, for example, a pn junction and a double heterostructure for radiation generation or detection. The semiconductor device is, for example, a light-emitting diode, in particular a light-emitting diode or a laser diode. The first and second injection regions are designed for injecting charge carriers into the active region.

[0012] The first injection region and the first protection region exhibit a first conductivity type. A conductivity type can be generated by doping a semiconductor material with foreign atoms. For example, the first conductivity is a p-type conductivity, in which the majority charge carriers are provided by holes. Preferably, the first injection region and the first protection region differ in the concentration of the dopants.

[0013] The second injection area and the second protection area exhibit a second conductivity type. For example, the second conductivity is an n-type conductivity, where the majority charge carriers are provided by electrons. Preferably, the second injection area and the second protection area differ in the concentration of dopants. In particular, the second conductivity type is different from the first conductivity type.

[0014] The dopant concentration is higher in the first protection zone than in the first injection zone.

[0015] A higher dopant concentration can locally influence the charge carrier density during the operation of the optoelectronic semiconductor device. For example, a higher dopant concentration in the first protection region reduces the density of minority charge carriers in that region. This allows the charge carrier density to be selectively reduced in areas where the efficiency of the semiconductor device is diminished by non-radiative recombination processes.

[0016] The dopant concentration is higher in the second protection zone than in the second injection zone. An increased dopant concentration in the second protection zone can influence the expansion of the first protection zone in the stacking direction. In particular, an increased dopant concentration in the second protection zone reduces the expansion of the first protection zone parallel to the stacking direction towards the second protection zone.

[0017] The second protective zone is located on the side of the second injection area facing away from the active area. By positioning it on the side of the second injection area facing away from the active area, the expansion of the first protective zone in the stacking direction can be controlled in a targeted and relatively simple manner.

[0018] The first protective area extends along a side face of the semiconductor body from a side of the first injection area facing away from the active area into the second injection area and completely penetrates the active area. The side face runs along the stacking direction of the semiconductor body, or perpendicular to the main direction of extension of the semiconductor body. For example, the side face can be arranged at an angle, particularly between 60° and 70°, to the main direction of extension, resulting in a trapezoidal cross-section of the semiconductor body. Furthermore, the side face can also be arranged parallel to the stacking direction or perpendicular to the main direction of extension of the semiconductor body. Preferably, the side face of the semiconductor body, and particularly preferably the side face in the active area, is completely covered by the first protective area.

[0019] This approach utilizes the understanding that the side faces of a semiconductor body can be a source of non-radiative recombination. By covering the side faces with the first protection region, the charge carrier density at the side face can be reduced, thus also decreasing the probability of non-radiative recombination. For example, the first protection region surrounds the semiconductor body at least partially in a lateral direction, preferably at least in the region of the active area.

[0020] In particular, a band gap in the active region is locally increased in the first protection zone by means of quantum well intermixing. During operation, this locally reduces the minority carrier density accordingly. Advantageously, this reduces non-radiative recombination on the side surface near the first protection zone.

[0021] The optoelectronic semiconductor device comprises: - a semiconductor body with a first injection area in which a first protective area is formed, a second injection area in which a second protective area is formed and an active area designed to generate electromagnetic radiation, which is arranged between the first injection area and the second injection area, wherein - the first injection area and the first protection area exhibit a first conductivity type, - the second injection area and the second protection area have a second conductivity type - the dopant concentration in the first protection zone is higher than in the first injection zone, - the dopant concentration in the second protection zone is higher than in the second injection zone, - the second protection area is located on a side of the second injection area facing away from the active area, and - the first protection area extends along a side surface of the semiconductor body from a side of the first injection area facing away from the active area into the second injection area and completely penetrates the active area.

[0022] The following considerations underlie the optoelectronic semiconductor device described here: undesirable non-radiative recombination effects can occur on the lateral surfaces of a semiconductor body. This effect is particularly significant in red-emitting microLEDs based on an indium gallium aluminum phosphide semiconductor material, as this material exhibits a high surface recombination velocity and a large charge carrier diffusion length. These properties generate a high probability of non-radiative recombination on the lateral surfaces of the semiconductor body. This effect increases with decreasing lateral dimensions of the semiconductor body, since smaller bodies have a proportionally larger number of lateral surfaces per unit volume.

[0023] The optoelectronic semiconductor device described here utilizes, among other things, the concept of introducing a first protection zone along a side face of the semiconductor body into a first and second injection zone. The first protection zone reduces the charge carrier density on the side face of the semiconductor body. This reduces the probability of non-radiative recombination, thereby advantageously increasing the efficiency of the optoelectronic semiconductor device.

[0024] According to at least one embodiment of the optoelectronic semiconductor device, the semiconductor body is based on a phosphide compound semiconductor material, in particular InGaAlP, or an arsenide compound semiconductor material, in particular AlGaAs. These semiconductor materials exhibit a particularly high surface recombination rate, which is why countermeasures regarding non-radiative recombination are particularly advantageous.

[0025] In this context, “based on phosphide compound semiconductor material” means that the semiconductor body or at least a part thereof, particularly preferably at least the active region and / or a growth substrate wafer, preferably Al n Ga m In 1-n-m P or As n Ga m In 1-n-m P comprises, where 0 ≤ n ≤ 1, 0 ≤ m ≤ 1 and n+m ≤ 1. In other words, the semiconductor body or at least a part thereof, particularly preferably at least the active region and / or a growth substrate wafer, comprises (InGa 1-x Al x ) y P 1-yThis material does not necessarily have to have a mathematically exact composition according to the formula above. Rather, it can contain one or more dopants as well as additional components. For the sake of simplicity, however, the formula above only includes the essential components of the crystal lattice (Al or As, Ga, In, P), even though these may be partially replaced by small amounts of other substances.

[0026] In this context, “based on arsenide compound semiconductor material” means that the semiconductor body or at least a part thereof, particularly preferably at least the active region and / or a growth substrate wafer, preferably Al n Ga m In 1-n-mThe formula includes As, where 0 ≤ n ≤ 1, 0 ≤ m ≤ 1, and n+m ≤ 1. This material does not necessarily have to have a mathematically exact composition according to the formula above. Rather, it may contain one or more dopants as well as additional components. For the sake of simplicity, however, the formula above only includes the essential components of the crystal lattice (Al or As, Ga, In), even though these may be partially replaced by small amounts of other substances.

[0027] A shielding region is arranged between the first and second protection regions. This shielding region is, for example, an epitaxially grown area of ​​the semiconductor body. The shielding region exhibits, in particular, the second conductivity type.

[0028] Preferably, the shielding region is formed with a semiconductor material that has a lower surface recombination velocity than the material of the second injection region. A low surface recombination velocity can advantageously reduce the probability of non-radiative recombination and thus increase the efficiency of the optoelectronic semiconductor device. In particular, the surface recombination velocity in the shielding region has a value of 1 × 10⁻⁶. 4 cm / s up to 1*10 6 cm / s, preferably the surface recombination velocity in the shielding area has a value of less than 1*10 5 cm / s.

[0029] The shielding area contains a lower proportion of aluminum than the second injection area. Particularly in layers based on a phosphide compound semiconductor material or an arsenide compound semiconductor material, a lower aluminum content can result in a reduced surface recombination rate.

[0030] According to at least one embodiment of the optoelectronic semiconductor device, the shielding area has a composition according to the formula (InGa 1-x Al x ) 0,49 P 0,51 where 0.5 ≤ x ≤ 0.9, preferably 0.6 ≤ x ≤ 0.8, and particularly preferably x = 0.6. Such a composite shielding area advantageously exhibits a particularly low surface recombination rate.

[0031] According to at least one embodiment of the optoelectronic semiconductor device, the shielding region has a lower surface recombination velocity than the second injection region. By means of a lower surface recombination velocity, the probability of non-radiative recombination in the shielding region is advantageously reduced.

[0032] According to at least one embodiment of the optoelectronic semiconductor device, the dopant concentration in the shielding area is at least twice as high, preferably at least four times higher, than the dopant concentration in the first protection area. The dopant concentration in the shielding area can be used, among other things, to control how far the first protection area extends into the second injection area. With a dopant concentration in the shielding area that is two to four times higher, the first protection area advantageously ends within the shielding area.

[0033] According to at least one embodiment of the optoelectronic semiconductor device, the first protection region ends within the shielding region. The shielding region exhibits a particularly low surface recombination velocity. If the first protection region ends within the shielding region, the probability of non-radiative recombination of a pn junction forming there is advantageously reduced due to the low surface recombination velocity of the shielding region material.

[0034] According to at least one embodiment of the optoelectronic semiconductor device, the first protection region is arranged outside a core region. The core region extends centrally within the semiconductor body and, in particular, runs parallel to the stacking direction. The core region is thus partially and preferably on all sides spaced away from the side faces of the semiconductor body. For example, a higher charge carrier density is present in the core region than in the first protection region.

[0035] According to at least one embodiment of the optoelectronic semiconductor device, the dopant concentration in the second protection zone is at least 2 times higher, preferably at least 4 times higher, than the dopant concentration in the first protection zone. For example, the dopant concentration in the second protection zone is between 4*10 17 cm -3 and 10*10 17 cm -3The dopant concentration in the second protection zone can be used to adjust, among other things, how far the first protection zone extends into the second injection zone. With a dopant concentration that is two to four times higher, the first protection zone advantageously ends within the shielding zone.

[0036] According to at least one embodiment of the optoelectronic semiconductor device, the first injection area and the second injection area are each based on a material having a composition according to the formula (InGa 1-x Al x ) 0,49 P 0,51 exhibits, where x = 1. Such a composition is advantageous for the formation of an optoelectronic semiconductor device configured to emit electromagnetic radiation in the red spectral range.

[0037] According to at least one embodiment of the optoelectronic semiconductor device, the first protection region is doped with one of the following materials: magnesium or zinc. An impurity atom that can alter the doping level in the first protection region and exhibits the highest possible diffusion rate is optimal as a dopant for the first protection region. The diffusion rate of zinc is particularly high, which is why zinc is preferred. The second protection region is, for example, doped with one of the following materials: tellurium or silicon.

[0038] According to at least one embodiment of the optoelectronic semiconductor device, the active region is configured as a quantum well structure, preferably as a multi-quantum well structure. A quantum well structure is, for example, a single quantum well (SQW) or a multi-quantum well (MQW). A quantum well structure enables particularly efficient radiative recombination of charge carriers. Furthermore, the band gap in a quantum well structure can be easily influenced by quantum well intermixing.

[0039] According to at least one embodiment of the optoelectronic semiconductor device, the active region is configured for the emission of electromagnetic radiation in a wavelength range of 580 nm to 1 µm, preferably in a wavelength range of 580 nm to 660 nm. For semiconductor devices with an emission spectrum of 580 nm to 660 nm, the aluminum content in the material is typically particularly high. This leads to a disadvantageously high surface recombination rate, which is why measures against non-radiative recombination processes are particularly important.

[0040] According to at least one embodiment of the optoelectronic semiconductor device, the lateral extent of the semiconductor body is less than 100 µm, preferably less than 50 µm, and particularly preferably less than 20 µm. The lateral extent describes an extension of the semiconductor body in a direction parallel to the main extension direction and transverse to the stacking direction of the semiconductor body. A small lateral extent enables, for example, the use of the optoelectronic semiconductor device as a pixel in a high-resolution display device.

[0041] A method for manufacturing an optoelectronic semiconductor device is further disclosed. The optoelectronic device can be manufactured, in particular, by means of a method described herein. That is to say, all features disclosed in connection with the method for manufacturing an optoelectronic semiconductor device are also disclosed for the optoelectronic semiconductor device, and vice versa.

[0042] According to the method for manufacturing an optoelectronic semiconductor device, in step A) a semiconductor body is provided with a first injection area, a second injection area in which a second protective area is formed and an active area designed to generate electromagnetic radiation, which is arranged between the first injection area and the second injection area, wherein - the first injection area exhibits a first conductivity type, - the second injection area and the second protection area have a second conductivity type - the dopant concentration in the second protection zone is higher than in the second injection zone, and - the second protection area is arranged on a side of the second injection area facing away from the active area. Preferably, a plurality of semiconductor bodies are provided in a wafer composite. For example, the semiconductor bodies are part of a continuous semiconductor layer sequence.

[0043] According to the method for manufacturing an optoelectronic semiconductor device, in step B) a mask region is applied to a side of the first injection region facing away from the active region, wherein the mask region has a smaller lateral extent than the first injection region and, viewed from a top view, is arranged centrally on the first injection region. Preferably, the mask region completely covers a core region of the semiconductor body.

[0044] In particular, the mask region is only weakly or not at all permeable to a material introduced as a dopant into the first injection region. This advantageously allows the introduction of the first dopant to be limited to an area outside the core region of the semiconductor body. For example, the mask material is applied to the entire surface of the semiconductor body. In particular, the mask region is structured using a photolithographic process. Preferably, a plurality of mask regions are arranged in parallel on a plurality of semiconductor bodies in a wafer array and structured in a single process step.

[0045] According to the method for fabricating an optoelectronic semiconductor device, in step C) a first dopant material is introduced into the first injection area to form a first protective region with the first conductivity type, which extends along a side face of the semiconductor body from the side of the first injection area facing away from the active region into the second injection area and completely penetrates the active region, wherein the dopant concentration in the first protective region is higher than in the first injection area. For example, the first dopant material is introduced into the first injection area by implantation.

[0046] The diffusion depth of the first dopant is largely determined by the doping concentration in the second protective zone. By appropriately selecting the doping profile in the second protective zone, the vertical extent of the first protective zone can be controlled.

[0047] The introduction of the first dopant material is at least partially shielded by the mask region, thus reducing or preventing its penetration into the core region. The first protective zone is therefore formed primarily on the side faces of the semiconductor body, outside the core region.

[0048] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor device, step C) is carried out such that a band gap of the active region in the first protection region is increased by quantum well intermixing. A locally increased band gap in the active region can reduce the charge carrier density at the side faces of the semiconductor body during operation of the semiconductor device. This advantageously reduces or prevents non-radiative recombination at the side faces of the semiconductor body.

[0049] The generation of sufficient quantum well intermixing depends, for example, on the duration of process step C). For instance, a duration of more than 4 minutes advantageously results in sufficient quantum well intermixing in the active region of the first protection zone. Step C) preferably takes place over a duration of at least 15 minutes and particularly preferably over a duration of at least 45 minutes.

[0050] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor device, the first dopant material is introduced in step C) by means of diffusion. Diffusion enables a particularly gentle introduction of dopant material that does not cause radiation damage in the crystal lattice of the semiconductor body.

[0051] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor device, in step A) a semiconductor body is provided which additionally has a shielding region between the first and second protection regions. The shielding region is formed, in particular, with a semiconductor material that is grown epitaxially. The shielding region exhibits, in particular, the second conductivity type.

[0052] Preferably, the shielding region is formed with a semiconductor material that has a lower surface recombination velocity than the material of the second injection region. A low surface recombination velocity can advantageously reduce the probability of non-radiative recombination and thus increase the efficiency of the optoelectronic semiconductor device. In particular, the surface recombination velocity in the shielding region has a value of 1 × 10⁻⁶. 4 cm / s up to 1*10 6 cm / s, preferably the surface recombination velocity in the shielding area has a value of less than 1*10 5 cm / s.

[0053] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor device, in step C) the first dopant material is introduced into the first injection area to form a first protection area with the first conductivity type, such that the first protection area extends along a side surface of the semiconductor body from the side of the first injection area facing away from the active area to the shielding area and completely penetrates the active area, wherein a dopant concentration in the shielding area is higher than in the first protection area.

[0054] The dopant concentration in the shielding area can be used to adjust, among other things, how far the first protection zone extends into the second injection zone. With a dopant concentration in the shielding area that is two to four times higher, the first protection zone advantageously ends within the shielding area.

[0055] According to at least one embodiment of the method for manufacturing an optoelectronic semiconductor device, a final geometry of the optoelectronic semiconductor device is defined in a subsequent step D) by common structuring processes for generating the side faces. For example, a side face has an angle between 60° and 70° to the main extension direction of the semiconductor body.

[0056] An optoelectronic semiconductor component described here is particularly suitable for use as a µLED in a display device, for example a display.

[0057] Further advantages and advantageous designs and developments of the optoelectronic semiconductor device result from the following, in connection with the non-claims examples and embodiments shown in the figures.

[0058] They show: Fig. 1 A schematic sectional view of an optoelectronic semiconductor device described here according to a first example, Fig. 2 a schematic sectional view of an optoelectronic semiconductor device described herein according to a first embodiment, Fig. 3 a schematic top view of an optoelectronic semiconductor device described here according to the first example, and Fig. 4 A schematic representation of a dopant concentration and a band gap profile along a stacking direction of an optoelectronic semiconductor device described here according to the first embodiment.

[0059] Identical, similar, or similarly effective elements in the figures are marked with the same reference symbols. The figures and the relative sizes of the elements depicted within them are not to be considered to scale. Rather, individual elements may be exaggerated for clarity and / or to improve representation.

[0060] The Fig. Figure 1 shows a schematic sectional view of an optoelectronic semiconductor device 1 described herein, according to a first example. The optoelectronic semiconductor device 1 comprises a semiconductor body 10 which has, along a stacking direction S, a second protection area 201 in which a second injection area 200 is formed, an active area 300 and a first injection area 100 in which a first protection area 101 is formed.

[0061] An electrical contact 20 is arranged on a side of the first injection area 100 facing away from the active area 300. Furthermore, an electrical contact 20 is arranged on a side of the second protective area 201 facing away from the active area 300. The electrical contacts 20 are formed with a metal. The optoelectronic semiconductor device 1 is electrically connected and charge carriers are injected into the semiconductor body 10 via the electrical contacts 20.

[0062] A mask region 30 is arranged on the electrical contact 20, which faces the first injection area 100. The mask region 30 is particularly poorly or not at all permeable to a first dopant material with which the first protective area 101 is doped. The mask region 30 can be removed in a further process step and is then no longer included in the finished optoelectronic semiconductor device 1.

[0063] The stacking direction S extends transversely, in particular perpendicularly, to the main extension direction of the active region 300. The semiconductor body 10 has a side surface 10A that extends parallel to the stacking direction S. The first protection region 101 extends along the side surface 10A of the semiconductor body 10 in the first injection region 100 to the second injection region 200, thereby completely penetrating the active region 300.

[0064] The first injection area 100 and the first protection area 101 each have a first conductivity type. The second injection area 200 and the second protection area 201 each have a second conductivity type. For example, the first conductivity type is p-type conductivity and the second conductivity type is n-type conductivity.

[0065] The level of the dopant concentration in the second protection zone 201 influences the extent of the first protection zone 101 in the stacking direction S. Advantageously, the dopant concentration of the second protection zone 201 is selected such that the first protection zone 101 ends in the second injection zone 200.

[0066] In the center of the semiconductor body 10, as seen in a top view parallel to the stacking direction S, there is a core area 500, which is free from the first protective area 101. The core area 500 is spaced on all sides from the side faces 10A of the semiconductor body 10. The core area 500 is at least partially covered by the shielding area 30. The lateral extent of the first protective area 101 is adjustable by means of the lateral extent of the shielding area 30.

[0067] In the first protection zone 101, a band gap in the active region 300 is locally increased by means of quantum well intermixing. This reduces the lateral diffusion of charge carriers in the active region 300 towards the side surfaces 10A. Consequently, a lower charge carrier concentration is generated at the side surfaces 10A in the active region 300. This advantageously reduces the non-radiative recombination probability in the optoelectronic semiconductor device 1.

[0068] Fig. Figure 2 shows a schematic sectional view of an optoelectronic semiconductor device 1 described herein according to a first embodiment. The first embodiment corresponds essentially to the first example. In contrast, the semiconductor body 10 in the first embodiment comprises Fig. 2 in the first embodiment shown additionally a shielding area 400, which is arranged between the first protection area 101 and the second protection area 201 and has the second conductivity type.

[0069] Shielding area 400 is formed with a material containing a lower proportion of aluminum than the second injection area 200. Due to the lower aluminum content in shielding area 400, the surface recombination rate is advantageously reduced. Therefore, there is a lower probability of non-radiative recombination in shielding area 400.

[0070] The dopant concentrations in the shielding area 400 and the second protection area 201 influence the extent of the first protection area 101 in the stacking direction S. Advantageously, the dopant concentration of the shielding area 400 is selected such that the first protection area 101 ends within the shielding area 400. Furthermore, the dopant concentration in the second injection area 200 is sufficiently low. For example, the dopant concentration in the second injection area 200 is lower than the dopant concentration in the first protection area 101. Conversely, the dopant concentration in the shielding area 400 is preferably at least a factor of 2, and preferably at least a factor of 4, higher than the dopant concentration in the first protection area 101.

[0071] Because the first protection area 101 ends in the shielding area 400, a pn junction formed there advantageously has a particularly low probability of non-radiative surface recombination processes.

[0072] In Fig. Figure 3 shows a schematic top view of an optoelectronic semiconductor device 1 described here, according to the first example. The top view shows a lateral extension L of the semiconductor body 10. The lateral extension L extends from one side face 10A of the semiconductor body 10 to an opposite side face 10A of the semiconductor body 10. The semiconductor body 10 does not necessarily have to be square or rectangular. The lateral extension L can, for example, also be considered the diameter of a round semiconductor body 10.

[0073] In the top view of the semiconductor body 10, the injection area 100 and the first protection area 101 are visible. The core area 500, which is free of the first protection area 101, is shown in the center of the semiconductor body 10. The core area 500 is completely surrounded laterally by the first protection area 101 and is spaced on all sides from the side surfaces 10A of the semiconductor body 10. Thus, all side surfaces 10A of the semiconductor body 10 are covered by the first protection area 101. This advantageously reduces the non-radiative recombination probability at the side surfaces 10A.

[0074] Fig. Figure 4 shows a schematic representation of an n-doping concentration N, a p-doping concentration P and a band gap profile E along a stacking direction S of an optoelectronic semiconductor device 1 described here according to the first embodiment.

[0075] The band gap E is shown along the stacking direction S across the second protection area 201, the shielding area 400, the second injection area 200, the active area 300, and the first injection area 100. The active area 300 contains multiple layers with different band gaps E.

[0076] The n-doping concentration N reaches a maximum value within the second protection zone 201, which decreases steadily along the stacking direction S within the shielding zone 400. The p-doping concentration P reaches a maximum value within the first injection zone 100 and decreases steadily in the opposite direction to the stacking direction S towards the active zone 300. Within the first protection zone 101, the p-doping concentration P is higher than in the first injection zone 100 and thus extends against the stacking direction S through the active zone 300 and partially through the second injection zone 200 into the shielding zone 400.

[0077] The maximum value of the n-doping concentration N in the second protection zone 201 is at least a factor of 2, preferably at least a factor of 4, higher than the value of the p-doping concentration P in the first protection zone 101. This ensures that the extent of the first protection zone 101 ends within the shielding zone 400, opposite to the stacking direction S. Reference symbol list 1 optoelectronic semiconductor device 10 semiconductor bodies 20 Contact 30 mask area 100 first injection area 101 first protection area 200 second injection area 201 second protection area 300 active area 400 shielding area 500 core area 10A Side surface L lateral extension S Stacking direction E Energy of the band gap P p-doping concentration N n-doping concentration

Claims

Optoelectronic semiconductor device (1) comprising: a semiconductor body (10) with a first injection area (100) in which a first protection area (101) is formed, a second injection area (200) in which a second protection area (201) is formed, and an active area (300) configured for generating electromagnetic radiation, which is arranged between the first injection area (100) and the second injection area (200), wherein: the first injection area (100) and the first protection area (101) have a first conductivity type; the second injection area (200) and the second protection area (201) have a second conductivity type; the dopant concentration in the first protection area (101) is higher than in the first injection area (100); and the dopant concentration in the second protection area (201) is higher than in the second injection area (200).- the second protection area (201) is arranged on a side of the second injection area (200) facing away from the active area (300), - the first protection area (101) extends along a side surface (10A) of the semiconductor body (10) from a side of the first injection area (100) facing away from the active area (300) into the second injection area (200) and completely penetrates the active area (300), - a shielding area (400) is arranged between the first protection area (101) and the second protection area (201), and - the shielding area (400) has a lower proportion of aluminum than the second injection area (200). Optoelectronic semiconductor device (1) according to the preceding claim, wherein the semiconductor body (10) is based on a phosphide compound semiconductor material, in particular InGaAlP or an arsenide compound semiconductor material, in particular AlGaAs. Optoelectronic semiconductor device (1) according to one of the preceding claims, wherein the shielding area (400) has a composition according to the formula (InGa1-xAlx)0,49P0,51, wherein 0.5 ≤ x ≤ 0.9 applies, preferably 0.6 ≤ x ≤ 0.8 applies and particularly preferably x = 0.6 applies. Optoelectronic semiconductor device (1) according to one of the preceding claims, wherein the shielding area (400) has a lower surface recombination rate than the second injection area (200). Optoelectronic semiconductor device (1) according to one of the preceding claims, wherein a dopant concentration in the shielding area (400) is at least a factor of 2 higher, preferably at least a factor of 4 higher, than the dopant concentration in the first protection area (101). Optoelectronic semiconductor device (1) according to one of the preceding claims, wherein the first protection area (101) ends within the shielding area (400). Optoelectronic semiconductor device (1) according to one of the preceding claims, wherein the first protection area (101) is arranged outside a core area (500). Optoelectronic semiconductor device (1) according to one of claims 1 and 2, wherein the dopant concentration in the second protection area (201) is at least a factor of 2 higher, preferably at least a factor of 4 higher, than the dopant concentration in the first protection area (101). Optoelectronic semiconductor device (1) according to one of the preceding claims, wherein the first injection area (100) and the second injection area (200) are each based on a material having a composition according to the formula (InGa1-xAlx)0,49P0,51, where x = 1. Optoelectronic semiconductor device (1) according to one of the preceding claims, wherein the first protection area (101) is doped with one of the following materials: Mg, Zn. Optoelectronic semiconductor device (1) according to one of the preceding claims, wherein the active region (300) is designed as a quantum well structure, preferably as a multi-quantum well structure. Optoelectronic semiconductor device (1) according to one of the preceding claims, wherein the active area (300) is configured to emit electromagnetic radiation in a wavelength range of 580 nm to 1 µm, preferably in a wavelength range of 580 nm to 660 nm. Optoelectronic semiconductor device (1) according to one of the preceding claims, wherein a lateral extent (L) of the semiconductor body (10) is less than 100 µm, preferably less than 50 µm and particularly preferably less than 20 µm. Method for fabricating an optoelectronic semiconductor device (1), comprising the steps: A) Providing a semiconductor body (10) with a first injection area (100), a second injection area (200) in which a second protective area (201) is formed, and an active area (300) configured for generating electromagnetic radiation, which is arranged between the first injection area (100) and the second injection area (200), wherein: - the first injection area (100) has a first conductivity type, - the second injection area (200) and the second protective area (201) have a second conductivity type, - a dopant concentration in the second protective area (201) is higher than in the second injection area (200), - the second protective area (201) is arranged on a side of the second injection area (200) facing away from the active area (300).B) Applying a mask region (30) to a side of the first injection region (100) facing away from the active region (300), wherein the mask region (30) has a smaller lateral extent (L) than the first injection region (100) and, viewed from a top view, is located centrally on the first injection region (100), and C) Introducing a first dopant material into the first injection region (100) to form a first protection region (101) with the first conductivity type, which extends along a side face (10A) of the semiconductor body (10) from the side of the first injection region (100) facing away from the active region (300) into the second injection region (200) and completely penetrates the active region (300), wherein a dopant concentration in the first protection region (101) is higher than in the first injection region (100).- a shielding area (400) is arranged between the first protection area (101) and the second protection area (201), and - the shielding area (400) has a lower proportion of aluminum than the second injection area (200). Method for manufacturing an optoelectronic semiconductor device (1) according to the preceding claim, wherein step C) is carried out such that a band gap (E) of the active region (300) in the first protection region (101) is increased by quantum well intermixing. Method for manufacturing an optoelectronic semiconductor device (1) according to one of claims 14 and 15, wherein the introduction of a first doping material into the first injection area (100) in step C) is carried out by diffusion. Method for manufacturing an optoelectronic semiconductor device (1) according to one of claims 14 to 16, wherein in step A) a semiconductor body (10) is provided which additionally has the shielding area (400) between the first protection area (101) and the second protection area (201). Method for manufacturing an optoelectronic semiconductor device (1) according to the preceding claim, wherein in step C) the introduction of the first dopant material into the first injection area (100) to form a first protection area (101) with the first conductivity type is carried out such that the first protection area (101) extends along a side surface (10A) of the semiconductor body (10) from the side of the first injection area (100) facing away from the active area (300) to the shielding area (400) and completely penetrates the active area (300), wherein a dopant concentration in the shielding area (400) is higher than in the first protection area (101).

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