Particle beam device with a deflection unit

Abstract

Particle beam device (100) for imaging, analyzing and / or manipulating an object (114), comprising: - an optical axis (OA); - a first particle beam generator (300) for generating a first particle beam comprising first charged particles, wherein the first particle beam generator (300) has a first generator beam axis (301) wherein the optical axis (OA) and the first generator beam axis (301) are identical; - a second particle beam generator (400) for generating a second particle beam comprising a second charged particle, wherein the second particle beam generator (400) has a second generator beam axis (401), wherein the optical axis (OA) and the second generator beam axis (401) are arranged at an angle other than 0° and 180°; - a deflection unit (500) for deflecting the second charged particles from the second source beam axis (401) to the optical axis (OA) and along the optical axis (OA), wherein the deflection unit (500) has a first aperture (501) and a second aperture (502) which is different from the first aperture (501), wherein the optical axis (OA) passes through the first aperture (501), and wherein the second source beam axis (401) passes through the second aperture (502); - at least one objective lens (107) for focusing the first particle beam or the second particle beam onto the object (114), wherein the optical axis (OA) passes through the objective lens (107); and - at least one detector (116, 117, 121, 122) for detecting interaction particles and / or interaction radiation, wherein the interaction particles and the interaction radiation are generated when the first particle beam or the second particle beam hits the object (114), wherein the deflection unit (500) has a first operating mode and a second operating mode, wherein in the first operating mode the first charged particles of the first particle beam are guided along the optical axis (OA) and are not deflected by the deflection unit (500), and wherein in the second operating mode the second charged particles of the second particle beam are deflected by the deflection unit (500) from the second generating beam axis (401) to the optical axis (OA) and are guided further along the optical axis (OA).

Description

TECHNICAL FIELD

[0001] The invention relates to a particle beam device for imaging, analyzing, and / or processing an object. The particle beam device according to the invention has a deflection unit. In particular, the particle beam device can be an ion beam device and / or an electron beam device. BACKGROUND OF THE INVENTION

[0002] Electron beam devices, in particular a scanning electron microscope (hereinafter also referred to as SEM) and / or a transmission electron microscope (hereinafter also referred to as TEM), are used to examine objects (also referred to as samples) in order to obtain knowledge regarding the properties and behavior of the objects under certain conditions.

[0003] In an SEM, an electron beam (hereinafter also referred to as the primary electron beam) is generated using a beam generator and focused onto an object under investigation using a beam guidance system. An objective lens is used for focusing purposes. The primary electron beam is guided over the surface of the object under investigation using a deflection device. This is also referred to as scanning. The area scanned by the primary electron beam is also referred to as the scan range. During scanning, the electrons of the primary electron beam interact with the object under investigation. Interaction particles and / or interaction radiation result as a result of the interaction. For example, the interaction particles are electrons.Specifically, electrons are emitted from the object—the so-called secondary electrons—and electrons from the primary electron beam are scattered back by the object—the so-called backscattered electrons. The interacting particles form the so-called secondary particle beam and are detected by at least one particle detector. The particle detector generates detection signals that are used to create an image of the object. This is how an image of the object under investigation is obtained. For example, the interacting radiation is X-rays or cathodoluminescence light. At least one radiation detector is used to detect the interacting radiation.

[0004] In the case of a TEM, a primary electron beam is similarly generated using a beam generator and directed onto an object to be examined by a beam guidance system. The primary electron beam passes through the object to be examined. As the primary electron beam passes through the object to be examined, the electrons of the primary electron beam interact with the material of the object to be examined. The electrons passing through the object to be examined are imaged onto a fluorescent screen or a detector—for example, in the form of a camera—by a system that includes an objective lens. For example, the aforementioned system also includes a projection lens. Imaging can also take place in the scanning mode of a TEM. Such a TEM is called an RTEM.In addition, it can be provided that electrons backscattered from the object to be examined and / or secondary electrons emitted by the object to be examined are detected by means of at least one further detector in order to image the object to be examined.

[0005] Combining the functions of an STEM and an SEM in a single particle beam device is known. It is therefore possible to use this particle beam device to examine objects with an SEM function and / or an STEM function.

[0006] Furthermore, a particle beam device in the form of an ion beam column is known. Ions used to process an object are generated using an ion beam generator arranged in the ion beam column. For example, material from the object is removed during processing, or material is applied to the object during processing, in which case a gas may be used. The ions are used additionally or alternatively for imaging.

[0007] Furthermore, the prior art has disclosed the practice of analyzing and / or processing an object in a particle beam device using electrons on the one hand and ions on the other. For example, an electron beam column with the function of an SEM is arranged on the particle beam device. In addition, an ion beam column, as explained above, is arranged on the particle beam device. The electron beam column with the SEM function serves in particular for further examination of the processed or unprocessed object, but also for processing the object.

[0008] A particle beam generator in the form of an electron gun is known from the prior art. For example, the electron gun is a thermionic source that emits electrons when heated. Alternatively, the electron gun can be a field emission source that emits electrons when a strong electric field is applied.

[0009] A thermionic source uses, for example, a tungsten filament, a tip emitter of a single crystal, or a sintered compound of lanthanum hexaboride (LaB6) or cerium hexaboride (CeB6). When such materials are heated to a sufficiently high temperature, the material's electrons acquire sufficiently high energy to overcome the natural barrier (work function). Therefore, the thermionic source is caused to emit thermally excited electrons, generating an electron beam. The design of a thermionic source can vary. It is known to use a thermionic source that has a tip, for example, the tip of a tungsten filament, or a LaB6 crystal that has such a tip. It is also known to use a LaB6 crystal in the shape of a truncated cone with a polished circular disk. This disk serves as an electron-emitting surface.

[0010] A field emission source operates on a different principle than thermionic sources. The principle underlying field emission is that the strength of an electric field increases significantly at sharp peaks. If the electric field is strong enough, the work function barrier is lowered sufficiently so that electrons can tunnel out of the material due to the tunneling effect or Schottky effect. There are two types of field emission sources: a cold field emission source and a thermal field emission source. In the case of a cold field emission source, the end of an electron source is usually made from a single-crystal tungsten fine wire and is subjected to a strong electric field at room temperature, causing electrons to be emitted within the single crystal using the tunneling effect, thus generating an electron beam.To allow field emission, however, the surface must be free of impurities and oxides. This can be achieved by operating the system under relatively good vacuum conditions (e.g., the residual pressure is less than 10). -7 hPa), particularly under UHV (ultra-high vacuum) conditions. In the case of a thermal field emission source, the electron source is heated while subjected to a strong electric field, which causes electrons to be emitted using the Schottky effect, thus generating an electron beam. The required vacuum conditions for such an electron source are less stringent, but still require a residual pressure of less than 10 -6 hPa.

[0011] Another particle beam generator in the form of an ion beam generator is also known from the prior art. The ion beam generator comprises an ion source configured to emit ions, a suppressor electrode configured to suppress the emitted ions from a side surface of the ion source, an extractor electrode configured to extract the ions from the ion source, a first variable voltage supply unit for biasing the extractor electrode with an extractor voltage, and a second variable voltage supply unit for biasing the suppressor electrode with a suppressor voltage. The particle beam generator supplies an emission current comprising the ions.

[0012] It is known to use a liquid metal ion source as the ion source. The liquid metal ion source comprises a container containing liquid metal, for example, gallium. An emitting device in the form of an emitting wire with a tip is arranged on the container. The liquid metal flows from the container along a surface of the emitting wire to the tip of the emitting wire. Due to the above-described arrangement of the ion source, the tip of the emitting wire is exposed to an electric field sufficient to ionize atoms of the liquid metal and extract them from the tip of the emitting wire. This generates an ion beam comprising ions.

[0013] If liquid gallium is used as the metal for the liquid metal ion source, gallium ions may be implanted into the surface of the object. When a gallium liquid metal ion source is used, the penetration depth of the gallium ions into the object is a few nm, for example, 5 nm to 8 nm. The implantation of gallium ions can change the chemical structure of the object, which is often undesirable. It is also known to use a plasma ion source as an ion particle beam generator, using a noble gas such as argon to generate ions. The use of such a plasma ion source reduces or eliminates the implantation of ions into the object.It is also known to use, in a first step, a gallium liquid metal ion source to generate ions for milling an object and, in a second step, to use a plasma ion source to generate ions for removing a layer of the material of the object, the layer having a thickness of 5 nm to 8 nm, thereby removing gallium ions implanted in the object during milling.

[0014] A particle beam device is known that includes both a liquid metal ion source and a plasma ion source. In particular, the particle beam device includes a first particle beam column including the liquid metal ion source and a second particle beam column including the plasma ion source, wherein the first particle beam column and the second particle beam column are arranged at an object chamber of the particle beam device. The object is moved to a first position in the object chamber when ions generated by the liquid metal ion source are guided to the object. Furthermore, the object is moved to a second position in the object chamber when ions generated by the plasma ion source are guided to the object. The object chamber is large enough so that the first particle beam column and the second particle beam column can be arranged at the object chamber.However, if a smaller object chamber is used, there is not sufficient space available at the object chamber to arrange the first particle beam column and the second particle beam column at the object chamber.

[0015] As prior art, reference is made to DE 196 50 680 A1 and WO 01 / 82330 A1. Reference is also made to US 2004 / 0000642 A1, WO 01 / 88514 A1, and US 8 729 466 B1.

[0016] It is therefore desirable to provide a particle beam device comprising a first particle beam generator for generating a first particle beam comprising first charged particles and a second particle beam generator for generating a second particle beam comprising second charged particles, the particle beam device also comprising means for selecting the first charged particles or the second charged particles. SUMMARY OF THE INVENTION

[0017] According to the invention, this object is achieved by a particle beam device according to claim 1. Further features of the invention emerge from the following description, the following claims and / or the accompanying figures.

[0018] The particle beam device according to the invention is used for imaging, analyzing, and / or processing an object. The aforementioned particle beam device can be an electron beam device and / or an ion beam device. The particle beam device can comprise an optical axis along which a first particle beam or a second particle beam of the particle beam device can be guided.

[0019] The particle beam device according to the invention may comprise a first particle beam generator for generating the first particle beam comprising first charged particles. The first charged particles may be electrons or ions. The first particle beam generator has a first generator beam axis. The optical axis and the first generator beam axis are identical. In particular, the optical axis and the first generator beam axis may follow a straight line.

[0020] Additionally, the particle beam device according to the invention may comprise a second particle beam generator for generating the second particle beam comprising second charged particles. The second charged particles may be electrons or ions. The second particle beam generator may have a second generator beam axis. The optical axis and the second generator beam axis are arranged at an angle that differs from 0° to 180°. In other words, the optical axis and the second generator beam axis are arranged at an angle to each other and are not identical.

[0021] The particle beam device according to the invention can also comprise a deflection unit for deflecting the second charged particles of the second particle beam from the second generator beam axis to the optical axis and further along the optical axis. The deflection unit can comprise a first opening and a second opening that is different from the first opening. The optical axis passes through the first opening, whereas the second generator beam axis passes through the second opening. The particle beam device according to the invention can be designed such that the first charged particles of the first particle beam are not deflected by the deflection unit when the first charged particles of the first particle beam are guided along the optical axis. Accordingly, the deflection unit can have two operating modes, namely a first operating mode and a second operating mode.In the first operating mode, the first charged particles of the first particle beam are guided along the optical axis and are not deflected by the deflection unit. In the second operating mode, the second charged particles of the second particle beam are deflected by the deflection unit from the second generator beam axis to the optical axis and are further guided along the optical axis.

[0022] The particle beam device according to the invention can also comprise an objective lens for focusing the first particle beam or the second particle beam onto the object. Furthermore, the particle beam device according to the invention can have at least one detector for detecting interaction particles and / or interaction radiation, wherein the interaction particles and the interaction radiation are generated when the first particle beam or the second particle beam impinges on the object. The interaction particles can be secondary particles and / or backscattered particles, in particular secondary electrons and backscattered electrons or backscattered ions. The interaction radiation can be X-rays and / or cathodoluminescent light.

[0023] The particle beam device according to the invention provides for selecting the first particle beam comprising the first charged particles or the second particle beam comprising the second charged particles. Furthermore, the particle beam device according to the invention provides for deflecting the second particle beam comprising the second charged particles from the second generator beam axis to the optical axis and along the optical axis to guide the second particle beam to the objective lens. In addition, the particle beam device according to the invention is designed to focus the second particle beam comprising the second charged particles in a deflection plane, which is identical to focusing the second particle beam in a further plane at each point on the optical axis, the further plane being perpendicular to the deflection plane. Therefore, stigmatic imaging of the object can be provided.In addition, the particle beam device according to the invention provides that the first particle beam passes through the deflection unit when the first particle beam is selected, wherein the first particle beam is not deflected by the deflection unit.

[0024] An embodiment of the particle beam device according to the invention additionally or alternatively provides that the first particle beam generator is a liquid metal ion source. In particular, the first particle beam generator can be a gallium liquid metal ion source. The invention is not limited to gallium as a metal. Rather, any metal suitable for the invention can be selected. Another embodiment of the particle beam device according to the invention additionally or alternatively provides that the second particle beam generator is a plasma ion source. In particular, the second particle beam generator can be a noble gas plasma ion source, for example, an argon plasma ion source. The invention is not limited to argon as a noble gas. Rather, any noble gas suitable for the invention can be selected.

[0025] Another embodiment of the particle beam device according to the invention additionally or alternatively provides that the first particle beam generator can be a cold field emission source and that the second particle beam generator can be a thermionic source. For example, the first particle beam generator can be a first electron source and / or the second particle beam generator can be a second electron source. Additionally or alternatively, the particle beam device according to the invention provides that the first particle beam generator can be an electron source and that the second particle beam generator can be an ion source. In a further embodiment, the particle beam device according to the invention provides that the first particle beam generator can be an ion source and that the second particle beam generator can be an electron source.A further embodiment of the particle beam device according to the invention additionally or alternatively provides that the first particle beam generator is a first ion source and that the second particle beam generator is a second ion source.

[0026] An embodiment of the particle beam device according to the invention additionally or alternatively provides a first generator condenser lens that extends along the first generator beam axis. Accordingly, the first generator condenser lens extends along the optical axis. Furthermore, the first generator condenser lens is arranged between the first particle beam generator and the deflection unit. The first generator condenser lens is designed to focus and guide the first particle beam along the optical axis. Additionally or alternatively, the particle beam device according to the invention provides a second generator condenser lens that extends along the second generator beam axis. Accordingly, the second generator condenser lens does not extend along the optical axis. In addition, the second generator condenser lens is arranged between the second particle beam generator and the deflection unit.The second generator condenser lens is designed to focus and guide the particle beam along the second generator beam axis. In particular, the second generator condenser lens can create a crossover of the second particle beam at a center of the deflection unit and on the optical axis. The crossover is a beam waist of the second particle beam, wherein the beam waist is a region having a minimum diameter of the second particle beam.

[0027] A further embodiment of the particle beam device according to the invention additionally or alternatively provides a beam limiting aperture unit, which can be arranged along the optical axis. Furthermore, the beam limiting aperture unit can be arranged between the deflection unit and the objective lens. In particular, the beam limiting aperture unit can be designed to select second charged particles of the second particle beam that are to be guided to the objective lens and focused onto the object. The second particle beam can be scattered after being deflected by the deflection unit. The dispersion depends on the energy of the second charged particles. The beam limiting aperture unit can have a region illuminated by the second particle beam, which comprises second charged particles having any available kinetic energy.Therefore, second charged particles with any available kinetic energy are guided to the objective lens. Accordingly, dispersion of the second particle beam due to the deflection of the second charged particles, which have different energies, by the deflection unit does not affect the beam quality of the second particle beam entering the objective lens.

[0028] Another embodiment of the particle beam device according to the invention additionally or alternatively provides a first beam stopping unit for stopping the first particle beam. In other words, the particle beam device can comprise a first beam stopping unit used to stop the first particle beam when the second particle beam is deflected by the deflection unit and guided along the optical axis to the objective lens. The deflection unit can be designed such that, when the second particle beam is deflected from the second generator beam axis to the optical axis, the first particle beam is deflected by the deflection unit to the first beam stopping unit to stop the first particle beam.

[0029] An embodiment of the particle beam device according to the invention additionally or alternatively provides a first movable beam stopping unit for stopping the first particle beam, wherein the first movable beam stopping unit can extend along the first generator beam axis. Furthermore, the first movable beam stopping unit can be arranged between the first particle beam generator and the deflection unit. The first movable beam stopping unit of this embodiment can be used to stop the first particle beam when the second particle beam is deflected by the deflection unit and guided along the optical axis to the objective lens. In particular, the first movable beam stopping unit can be a valve.The valve may be designed to be closed when the first particle beam needs to be stopped and may be designed to be opened when the first particle beam is guided along the optical axis to the objective lens.

[0030] Another embodiment of the particle beam device according to the invention additionally or alternatively provides a second beam stopping unit for stopping the second particle beam. In other words, the particle beam device can comprise a second beam stopping unit used to stop the second particle beam when the first particle beam is guided along the optical axis to the objective lens. When the first particle beam is guided along the optical axis, the deflection unit deflects neither the first particle beam nor the second particle beam. Therefore, the second particle beam is guided along the second generator beam axis to stop the second particle beam to the second beam stopping unit.

[0031] An embodiment of the particle beam device according to the invention additionally or alternatively provides a second movable beam stopping unit for stopping the second particle beam, wherein the second movable beam stopping unit can extend along the second generator beam axis. Furthermore, the second movable beam stopping unit can be arranged between the second particle beam generator and the deflection unit. The second movable beam stopping unit of this embodiment can be used to stop the second particle beam when the first particle beam is guided along the optical axis to the objective lens. In particular, the second movable beam stopping unit can be a valve.The valve may be designed to be closed when the second particle beam needs to be stopped and may be designed to be opened when the second particle beam is guided from the second generator beam axis to the optical axis and along the optical axis in the direction towards the objective lens.

[0032] A further embodiment of the particle beam device according to the invention additionally or alternatively provides that the deflection unit can be a magnetic deflection unit that provides an inhomogeneous magnetic field. In particular, the deflection unit can have a first pole piece and a second pole piece arranged opposite the first pole piece. A conical opening having a half cone angle is arranged between the first pole piece and the second pole piece, with the optical axis passing through the conical opening. The half cone angle can be in the range of 0.5° to 4°, with the limits being included within the range. The invention is not limited to the aforementioned range. Rather, any value of the half cone angle suitable for the invention can be selected. The first pole piece and the second pole piece can comprise a yoke having a coil arranged on the yoke.The conical aperture can provide the inhomogeneous magnetic field used to focus the second particle beam comprising the second charged particles in the deflection plane, which is identical to focusing the second particle beam in the further plane at any point along the optical axis, the further plane being perpendicular to the deflection plane. The magnetic field strength B can be given by. B=1R⋅2⋅m⋅Ue where R is a deflection radius, m is the mass of second charged particles of the second particle beam, U is an acceleration voltage of the second charged particles of the second particle beam, and e is the elementary charge. For example, R = 50 mm and U = 2 kV. Therefore, the magnetic field strength B can be 0.81 T if the second charged particles are argon ions. The half cone angle can be given by α=18⋅DR where α is half the cone angle and D is the gap between the first pole piece and the second pole piece. For example, D = 10 mm. In this case, half the cone angle α is 1.43°.

[0033] Another embodiment of the particle beam device according to the invention additionally or alternatively provides that the deflection unit can be an electrostatic deflection unit that supplies an electric field. In particular, the electrostatic deflection unit can have a first deflection electrode and a second deflection electrode arranged opposite the first deflection electrode. The electrostatic deflection unit can have a spherical capacitor. Furthermore, the electrostatic deflection unit can comprise an input side and an output side. A first grounded shielding tube is arranged on the input side between the deflection unit and the second beam generator. A second grounded shielding tube is arranged on the output side between the deflection unit and the objective lens.The first grounded shielding tube and the second grounded shielding tube are designed to limit a fringe field of the electrostatic deflection unit. A third grounded shielding tube, designed to limit a fringe field of the electrostatic deflection unit, can be arranged at the first opening of the deflection unit, between the deflection unit and the first beam generator.

[0034] A voltage U1 at the first deflection electrode can be given by U1=2⋅U⋅(1−RR1) where R1 is a radius of the first deflection electrode, U is the acceleration voltage of the second charged particles of the second particle beam, and R is the deflection radius. In addition, a voltage U2 at the second deflection electrode can be given by U2=2⋅U⋅(1−RR2) where R2 is the radius of the second deflection electrode, U is the acceleration voltage of the second charged particles of the second particle beam, and R is the deflection radius. For example, U = 2 kV, R = 50 mm, R1 = 45 mm, and R2 = 55 mm. If this is the case, then U1 = -444 V and U2 = 364 V.

[0035] Another embodiment of the particle beam device according to the invention additionally or alternatively provides an electrode for compensating the electric field in the electrostatic deflection unit. Since the first opening in the electrostatic deflection unit influences the electric field in the electrostatic deflection unit, compensation of the electric field is desirable. Therefore, this embodiment of the particle beam device according to the invention provides the electrode for compensating the electric field. The electrode can be arranged at the first opening and can be separated from the deflection unit.

[0036] An embodiment of the particle beam device according to the invention additionally or alternatively provides that the first opening comprises a first opening part and a second opening part. The first opening part is connected to the second opening part via a bridge, wherein the bridge is part of the electrostatic deflection unit. In addition, the first opening part and the second opening part can be symmetrical. The electrode for compensating the electric field can be arranged on the first opening part and / or the second opening part of the first opening. Furthermore, the electrode can be separated from the electrostatic deflection unit. Additionally or alternatively, a first electrode for compensating the electric field can be arranged on the first opening part and a second electrode for compensating the electric field can be arranged on the second opening part. In addition, orthe first electrode for compensating the electric field and / or the second electrode for compensating the electric field may be separated from the electrostatic deflection unit.

[0037] A further embodiment of the particle beam device according to the invention additionally or alternatively provides at least one deformation of the electrostatic deflection unit for compensating the electric field in the electrostatic deflection unit. For example, the deformation is arranged at an edge or near the edge of the first opening of the electrostatic deflection unit. In particular, the at least one deformation can be arranged up to 10 mm from the edge of the first opening of the electrostatic deflection unit. The invention is not limited to this embodiment. Rather, the deformation(s) can be arranged anywhere on the electrostatic deflection unit where it is suitable for the invention. Since the first opening in the electrostatic deflection unit influences the electric field in the electrostatic deflection unit, means for compensating the electric field are desirable.Therefore, this embodiment comprises deformation compensation of the electric field. A further embodiment of the particle beam device according to the invention additionally or alternatively provides that the first opening comprises a first opening part and a second opening part. The first opening part is connected to the second opening part via a bridge, wherein the bridge is part of the electrostatic deflection unit. At least one deformation for compensating the electric field can be arranged on the bridge or in the vicinity of the bridge. In particular, the at least one deformation can be arranged up to 10 mm from the bridge. The invention is not limited to this embodiment. Rather, the deformation(s) can be arranged anywhere suitable for the invention, on the bridge or near the bridge. In addition, the first opening part and the second opening part can be symmetrical.

[0038] An embodiment of the particle beam device according to the invention additionally or alternatively provides that the particle beam device is at least one of the following: an electron beam device and an ion beam device. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Embodiments of the invention described here are explained in more detail in the following text with reference to the figures, in which: Fig. 1 shows a schematic representation of an embodiment of a particle beam device; Fig. 2 shows a schematic representation of a first embodiment of a particle generator unit of the particle beam device; Fig. 3 shows a further schematic representation of the first embodiment of the particle generating unit according to Fig. 2; Fig. 4 shows a schematic representation of a second embodiment of a particle generator unit of the particle beam device; Fig. 5 shows a schematic representation of a third embodiment of a particle generator unit of the particle beam device; Fig. 6 shows a schematic representation of a fourth embodiment of a particle generator unit of the particle beam device; Fig. 7 shows a schematic representation of a fifth embodiment of a particle generator unit of the particle beam device; Fig. 8 shows a schematic representation of a sixth embodiment of a particle generator unit of the particle beam device; and Fig. 9 shows a schematic representation of a seventh embodiment of a particle generator unit of the particle beam device.

[0040] Fig. Figure 1 shows a schematic representation of a particle beam device 100. The particle beam device 100 has a particle generator unit 200, which may comprise a housing. The particle generator unit 200 is attached to a beam guide tube (in Fig. 1 not shown).

[0041] The particle generator unit 200 comprises a first particle beam generator 300 for generating a first particle beam comprising first charged particles. The first charged particles can be electrons or ions. The first particle beam generator 300 comprises, for example, a first charged particle source 303 in the form of a liquid metal ion source. In particular, the first charged particle source 303 can be a gallium liquid metal ion source. The invention is not limited to gallium as a metal. Rather, any metal suitable for the invention can be selected. The first particle beam generator 300 has a first generator beam axis 301. An optical axis OA of the particle beam device 100 and the first generator beam axis 301 are identical. In particular, the optical axis OA and the first generator beam axis 301 can follow a straight line.A first generator condenser lens 302 extends along the first generator beam axis 301. Accordingly, the first generator condenser lens 302 extends along the optical axis OA. Furthermore, the first generator condenser lens 302 is arranged between the first particle beam generator 300 and a deflection unit 500, which is shown in FIG. Fig. 1 and will be described in detail below. The first generator condenser lens 302 is configured to focus and guide the first particle beam along the optical axis OA.

[0042] The particle generator unit 200 further comprises a second particle beam generator 400 for generating a second particle beam comprising second charged particles. The second charged particles can be electrons or ions. The second particle beam generator 400 comprises, for example, a second charged particle source 403 in the form of a noble gas plasma ion source, such as an argon plasma ion source. The invention is not limited to argon as a noble gas. Rather, any noble gas suitable for the invention can be selected. The second particle beam generator 400 has a second generator beam axis 401. The optical axis OA of the particle beam device 100 and the second generator beam axis 401 are arranged at an angle that differs from 0° and 180°. In other words, the optical axis OA and the second generator beam axis 401 are arranged at an angle to each other and are not identical.For example, the optical axis OA and the second generator beam axis 401 are arranged at 90° to each other. The invention is not limited to an angle of 90°. Rather, any angle suitable for the invention can be selected that differs from 0° and 180°. A second generator condenser lens 402 extends along the second generator beam axis 401. Accordingly, the second generator condenser lens 402 does not extend along the optical axis OA. Additionally, the second generator condenser lens 402 is arranged between the second particle beam generator 400 and the deflection unit 500. The second generator condenser lens 402 is configured to focus and guide the second particle beam along the second generator beam axis 401. In particular, the second generator condenser lens 402 may create a crossover of the second particle beam at a center of deflection on a curved axis 526.The crossover is a beam waist of the second particle beam, where the beam waist is an area that has a minimum diameter of the second particle beam.

[0043] Another embodiment of the particle beam device 100 according to the invention additionally or alternatively provides that the first particle beam generator 300 can be a cold field emission source and that the second particle beam generator 400 can be a thermionic source. For example, the first particle beam generator 300 can be a first electron source and / or the second particle beam generator 400 can be a second electron source. Additionally or alternatively, the particle beam device 100 according to the invention provides that the first particle beam generator 300 can be an electron source and that the second particle beam generator 400 can be an ion source. In a further embodiment, the particle beam device 100 according to the invention provides that the first particle beam generator 300 can be an ion source and that the second particle beam generator 400 can be an electron source.A further embodiment of the particle beam device 100 according to the invention additionally or alternatively provides that the first particle beam generator 300 is a first ion source and that the second particle beam generator 400 is a second ion source.

[0044] As mentioned above, the particle generator unit 200 may also comprise the deflection unit 500 for deflecting the second charged particles of the second particle beam from the second generator beam axis 401 to the optical axis OA and further along the optical axis OA. The deflection unit 500 comprises a first opening 501 and a second opening 502, which is different from the first opening 501. The optical axis OA runs through the first opening 501, wherein the first opening 501 is arranged on a first side of the deflection unit 500, the first side being directed towards the first particle beam generator 300. The second generator beam axis 401 runs through the second opening 502, wherein the second opening 502 is arranged on a second side of the deflection unit 500, the second side being directed towards the second particle beam generator 400.The deflection unit 500 also includes a third opening 503, which is different from the first opening 501 and the second opening 502. The third opening 503 is opposite the first opening 501. The optical axis OA also passes through the third opening 503, with the third opening 503 being arranged on a third side of the deflection unit 500, the third side being directed toward an objective lens 107 of the particle beam device 100.

[0045] The particle beam device 100 can be designed such that the first charged particles of the first particle beam are not deflected by the deflection unit 500 when the first charged particles of the first particle beam are guided along the optical axis OA. Accordingly, the deflection unit 500 can have two operating modes, namely a first operating mode and a second operating mode. In the first operating mode, the first charged particles of the first particle beam are guided along the optical axis OA and are not deflected by the deflection unit 500. In the second operating mode, the second charged particles of the second particle beam are deflected by the deflection unit 500 from the second generator beam axis 401 to the optical axis OA and are further guided along the optical axis OA.

[0046] The first charged particles of the first particle beam or the second charged particles of the second particle beam move along the optical axis OA through the beam guide tube extending to the objective lens 107, which may be an electrostatic and / or a magnetic objective lens.

[0047] A stationary aperture unit 109 is arranged between the deflection unit 500 and the objective lens 107. Alternatively, the aperture unit 109 is movable. In the embodiment shown here, the aperture unit 109 is a circular aperture having an aperture opening 118 through which the first particle beam or the second particle beam passes. The aperture opening 118 has an extension in the range of 5 µm to 2000 µm, for example, 35 µm, with the limits being included in this range. The aperture unit 109 can be a pressure-stage aperture. The aperture unit 109 of a further embodiment can have a plurality of openings that can be moved mechanically with respect to the first particle beam or the second particle beam, or through which the first particle beam or the second particle beam can pass using electrical and / or magnetic deflection devices.As mentioned above, the aperture unit 109 can also be a pressure stage unit. It separates a first region in which the particle generator unit 200 is arranged and which has an ultra-high vacuum (10th -7 up to 10 -12 hPa), from a second area with a high vacuum (10 -1 up to 10 -7 hPa). The second region is the intermediate pressure region of the beam guide tube, which leads via the objective lens 107 to an object chamber 120.

[0048] The objective lens 107 may comprise a magnetic lens, an electrostatic lens, or an electrostatic-magnetic lens. Depending on the type of lens, the objective lens 107 may comprise pole pieces into which a bore has been made. The beam guide tube may be arranged and guided through this bore if the lens has pole pieces. Furthermore, a coil may be arranged in the pole pieces. Depending on the type of lens, the objective lens 107 may comprise electrodes into which bores have been made. The beam guide tube may extend to the electrodes if the lens has electrodes. The electrical potential of the beam guide tube may be ground or different from ground. One or more of the electrodes may be at a different electrical potential than the beam guide tube potential.

[0049] In addition, the particle beam device 100 has a scanning device (in Fig. 1 not shown), by means of which the first particle beam or the second particle beam can be deflected and scanned over an object 114. In this process, the first charged particles of the first particle beam or the second charged particles of the second particle beam interact with the object 114. As a result of this interaction, interaction particles and / or interaction radiation are generated, which are detected. The detection signals obtained in this way are evaluated.

[0050] In particular, particles emitted from the surface of object 114 (so-called secondary particles) or particles of the first particle beam or the second particle beam are backscattered by object 114 (so-called backscattered particles) are used as interaction particles. The particles emitted from the surface of object 114 can be, for example, secondary electrons. Furthermore, the particles backscattered by object 114 can be backscattered electrons or ions.

[0051] To detect secondary particles and / or backscattered particles, a first detector 116 is arranged in the object chamber 120 of the particle beam device 100. The first detector 116 is used primarily to detect secondary particles. Particles backscattered by the object 114, ie, backscattered particles, can also be detected by the first detector 116.

[0052] The detection signals generated by the first detector 116 are used to generate an image or images of the surface of the object 114.

[0053] In addition to the above-mentioned first detector 116, the particle beam device 100 includes a radiation detector 122 arranged in the object chamber 120. The radiation detector 122 can be positioned, for example, between the beam guide tube and the object 114. Furthermore, the radiation detector 122 can also be positioned on the side of the object 114. The radiation detector 122 can be a CCD detector.

[0054] The object chamber 120 is operated in a first pressure range or in a second pressure range, wherein the first pressure range includes only pressures lower than or equal to 10 -3 hPa, and the second pressure range only includes pressures above 10 -3 hPa. A (in Fig. 1 not shown) pressure sensor for measuring the pressure in the object chamber 120 is arranged in the object chamber 120. A (in Fig. 1) in the form of a pump system connected to the pressure sensor and arranged on the object chamber 120 provides the pressure range in the object chamber 120, either the first pressure range or the second pressure range.

[0055] The particle beam device 100 may further include a second detector 121 arranged in the object chamber 120. The second detector 121 is arranged downstream of the object 114, as viewed from the first particle beam generator 300 in the direction of the object 114 along the optical axis OA. The first particle beam or the second particle beam may transmit through the object 114. Particles of the first particle beam or the second particle beam interact with the material of the object 114. Particles that transmit through the object 114 are detected using the second detector 121.

[0056] The first detector 116, the second detector 121, and the radiation detector 122 are connected to a control unit 123. The control unit 123 may include a monitor 124 used to display images generated using detector signals from the first detector 116, the second detector 121, and / or the radiation detector 122.

[0057] The particle generator unit 200 is connected to a first pump system 523 for providing a vacuum in the particle generator unit 200. Additionally or alternatively, the first particle beam generator 300 is connected to a second pump system 524 for providing a vacuum in the first particle beam generator 300. Additionally or alternatively, the second particle beam generator 400 is connected to a third pump system 525 for providing a vacuum in the second particle beam generator 400.

[0058] Fig. 2 shows a schematic view of the as in Fig. 1. The same reference numerals identify the same components of the particle generator unit 200. Therefore, the above-mentioned explanations also apply. Fig. Figure 3 shows a schematic view of the deflection unit 500 in the direction A, as in Fig. 2. The deflection unit 500 may be a magnetic deflection unit that provides an inhomogeneous magnetic field. In particular, the deflection unit 500 may have a first pole piece 504 and a second pole piece 505 arranged opposite the first pole piece 504. A conical opening 506 having a half cone angle α is arranged between the first pole piece 504 and the second pole piece 505, with the optical axis OA passing through the conical opening 506. In Fig. 3, the right edge of the deflection unit 500 corresponds to the coincident axes of symmetry 527 of the conical surface of the first pole piece 504 and the conical surface of the second pole piece 505. Furthermore, the center of the deflection arc of the second particle beam is positioned on these axes of symmetry 527. The half cone angle α of the conical surfaces can be in the range of 0.5° to 4°, with the limits included within the range. The invention is not limited to the aforementioned range. Rather, any value of the half cone angle α suitable for the invention can be chosen. The first pole piece 504 and the second pole piece 505 can comprise a yoke 507 having a coil 508 arranged on the yoke 507.The conical opening 506 can provide the inhomogeneous magnetic field used to focus the second particle beam comprising the second charged particles in the deflection plane, which is identical to focusing the second particle beam in the further plane at any point along the optical axis OA, the further plane being perpendicular to the deflection plane. The magnetic field strength B can be given by. B=1R⋅2⋅m⋅Ue where R is a deflection radius, m is the mass of second charged particles of the second particle beam, U is an acceleration voltage of the second charged particles of the second particle beam, and e is the elementary charge. For example, R = 50 mm and U = 2 kV. Therefore, the magnetic field strength B can be 0.81 T if the second charged particles are argon ions. The half cone angle α can be given by α=18⋅DR where α is half the cone angle and D is a gap between the first pole piece 504 and the second pole piece 505. For example, D = 10 mm. In this case, the half cone angle α is 1.43°.

[0059] Fig. 4 shows a schematic view of another embodiment of the particle generator unit 200. Fig. 4 is based on Fig. 2. The same reference numerals denote the same components of the particle generating unit 200. Therefore, the above-mentioned explanations also apply. In addition to the Fig. 2 shown components shows Fig. 4 a first beam stopping unit 509 for stopping the first particle beam. In other words, the particle beam device 100 comprises the first beam stopping unit 509, which is used to stop the first particle beam when the second particle beam is deflected by the deflection unit 500 and guided along the optical axis OA to the objective lens 107. The deflection unit 500 can be designed such that, when the second particle beam is deflected from the second generator beam axis 401 to the optical axis OA, the first particle beam is deflected by the deflection unit 500 to the first beam stopping unit 509 for stopping the first particle beam. Additionally or alternatively, the particle generator unit 200 can have a first movable beam stopping unit 511 for stopping the first particle beam, wherein the first movable beam stopping unit 511 can extend along the first generator beam axis 301.Furthermore, the first movable beam stopping unit 511 can be arranged between the first particle beam generator 300 and the deflection unit 500. The first movable beam stopping unit 511 of this embodiment can be used to stop the first particle beam when the second particle beam is deflected by the deflection unit 500 and guided along the optical axis OA to the objective lens 107. In particular, the first movable beam stopping unit 511 can be a valve. The valve can be configured to be closed when the first particle beam needs to be stopped and can be configured to be opened when the first particle beam is guided along the optical axis OA to the objective lens 107.

[0060] In addition to the Fig. 2 shown components shows Fig. 4, a second beam stopping unit 510 for stopping the second particle beam. In other words, the particle beam device 100 may include the second beam stopping unit 510, which is used to stop the second particle beam when the first particle beam is guided along the optical axis OA to the objective lens 107. When the first particle beam is guided along the optical axis OA, the deflection unit 500 deflects neither the first particle beam nor the second particle beam. Therefore, the second particle beam is guided along the second generator beam axis 401 to stop the second particle beam to the second beam stopping unit 510. Additionally or alternatively, the particle generator unit 200 has a second movable beam stopping unit 512 for stopping the second particle beam, wherein the second movable beam stopping unit 512 may extend along the second generator beam axis 401.Furthermore, the first movable beam stopping unit 512 can be arranged between the second particle beam generator 400 and the deflection unit 500. The second movable beam stopping unit 512 can be used to stop the second particle beam when the first particle beam is guided along the optical axis OA to the objective lens 107. In particular, the second movable beam stopping unit 512 can be a valve. The valve can be configured to be closed when the second particle beam needs to be stopped and can be configured to be opened when the second particle beam is guided from the second generator beam axis 401 to the optical axis OA and along the optical axis OA in the direction toward the objective lens 107.

[0061] Fig. Figure 5 shows a schematic view of another embodiment of the particle generating unit 200 of Fig. 1. The same reference numerals denote the same components of the particle generating unit 200. Therefore, the above-mentioned explanations also apply. In addition to the Fig. 1 shown components shows Fig. 5 shows the deflection unit 500, which is an electrostatic deflection unit that provides an electric field. In particular, the deflection unit 500 may have a first deflection electrode 513 and a second deflection electrode 514 arranged opposite the first deflection electrode 513. The deflection unit 500 may be a spherical capacitor. Furthermore, the deflection unit 500 may comprise an input side 517 and an output side 518. The input side 517 may be directed towards the second beam generator 400. The second beam generator 400 may be arranged at the input side 517. The output side 518 is directed towards the objective lens 107 (in Fig. 5 not shown). A first grounded shielding tube 516 is arranged on the input side 517 and extends along the second generator beam axis 401. A second grounded shielding tube 515 is arranged on the output side 518 and extends along the optical axis OA. The grounded shielding tubes 515, 516 are designed to limit a fringe field of the deflection unit 500 in the form of the electrostatic deflection unit.

[0062] A voltage U1 at the first deflection electrode 513 can be given by U1=2⋅U⋅(1−RR1) where R1 is a radius of the first deflection electrode 513, U is the acceleration voltage of the second charged particles of the second particle beam, and R is the deflection radius. In addition, a voltage U2 at the second deflection electrode 514 can be given by U2=2⋅U⋅(1−RR2) where R2 is a radius of the second deflection electrode 514, U is the acceleration voltage of the second charged particles of the second particle beam, and R is the deflection radius. For example, U = 2 kV, R = 50 mm, R1 = 45 mm, and R2 = 55 mm. If this is the case, then U1 = -444 V and U2 = 364 V.

[0063] Fig. 6 shows a schematic view of another embodiment of the particle generating unit 200. Fig. 6 is based on Fig. 5. The same reference numerals denote the same components of the particle generating unit 200. Therefore, the above-mentioned explanations also apply. In addition to the Fig. 5 shown components shows Fig. 6 shows an electrode 519 for compensating the electric field in the deflection unit 500 in the form of the electrostatic deflection unit. Since the first opening 501 in the deflection unit 500 influences the electric field in the deflection unit 500, compensation of the electric field is desirable. Therefore, this embodiment of the particle beam device 100 provides the electrode 519 for compensating the electric field. The electrode 519 can be arranged at the first opening 501, a voltage U3 can be applied to the electrode 519, and the electrode 519 can be separated from the deflection unit 500 by a distance of, for example, 2 mm to 10 mm, the boundaries being included in the range. The distance can be given by the distance from the center of the electrode 519 to an edge of the second deflection electrode 514.

[0064] The invention is not limited to the aforementioned range. Rather, any distance suitable for the invention may be chosen. Additionally or alternatively, the electrode 519 may be curved and may be quite close to the edge of the second deflection electrode 514. The voltage U3 may be given by U3=k⋅(DI⋅U2(R2−R))+U2 where k is a given factor between 0.5 and 2, with the limits contained within this range, and where DI is the distance of the electrode 519 to the deflection unit 500. All other variables are explained above.

[0065] Fig. Figure 7 shows a schematic view of an embodiment of the particle generating unit 200. Fig. 7 is based on Fig. 5. The same reference numerals denote the same components of the particle generating unit 200. Therefore, the above-mentioned explanations also apply. In addition to the Fig. 5 shown components shows Fig. 7 shows a deformation 520 of the second deflection electrode 514 for compensating the electric field in the deflection unit 500 in the form of the electrostatic deflection unit. The deformation 520 is arranged at an edge of the first opening 501 of the deflection unit 500. Since the first opening 501 in the deflection unit 500 influences the electric field in the deflection unit 500, means for compensating the electric field are desirable. Therefore, this embodiment includes the deformation 520 for compensating the electric field.

[0066] Fig. 8 shows a schematic view of another embodiment of the particle generator unit 200. Fig. 8 is based on Fig. 6. The same reference numerals denote the same components of the particle generating unit 200. Therefore, the above-mentioned explanations also apply. Instead of having a single first opening, the deflection unit 500 has, in the form of the Fig. 8 has a first opening comprising a first opening part 501A and a second opening part 501B.

[0067] In addition, the first opening part 501A and the second opening part 501B can be symmetrical. The first opening part 501A is connected to the second opening part 501B via a bridge 522. The bridge 522 is part of the deflection unit 500. A first electrode 519A for compensating the electric field can be arranged at the first opening part 501A, whereas a second electrode 519B for compensating the electric field can be arranged at the second opening part 501B. The first electrode 519A for compensating the electric field can be arranged between the deflection unit 500 and the first particle beam generator 300, a voltage U 3Acan be applied to the first electrode 519A for compensating the electric field, and the first electrode 519A for compensating the electric field can be separated from the deflection unit 500 by a distance of, for example, 2 mm to 10 mm, the boundaries being included in the range. The distance can be given by the distance from the center of the first electrode 519A to an edge of the second deflection electrode 514. The invention is not limited to the aforementioned range. Rather, any distance suitable for the invention can be chosen. Additionally or alternatively, the first electrode 519A can be curved and can be quite close to the edge of the second deflection electrode 514. The voltage U 3A can be given by U3A=k⋅(DI⋅U2(R2−R))+U2 where k is a given factor between 0.5 and 2, with the limits being included in this range, and where DI is the distance between the first electrode 519A and the deflection unit 500. All other variables are explained above. In addition, the second electrode 519B can be arranged to compensate the electric field between the deflection unit 500 and the first particle beam generator 300, a voltage U 3Bcan be applied to the second electrode 519B for compensating the electric field, and the second electrode 519B for compensating the electric field can be separated from the deflection unit 500 by a distance of, for example, 2 mm to 10 mm, the boundaries being included in the range. The distance can be given by the distance from the center of the second electrode 519B to an edge of the second deflection electrode 514. The invention is not limited to the aforementioned range. Rather, any distance suitable for the invention can be chosen. Additionally or alternatively, the second electrode 519B can be curved and can be quite close to the edge of the second deflection electrode 514. The voltage U 3B can be given by U3B=k⋅(DI⋅U2(R2−R))+U2 where k is a given factor between 0.5 and 2, with the limits being included within this range, and where DI is the distance of the second electrode 519B to the deflection unit 500. All other variables are explained above.

[0068] Fig. 8 also shows a first beam stopping unit 509 for stopping the first particle beam. In other words, the particle beam device 100 comprises the first beam stopping unit 509, which is used to stop the first particle beam when the second particle beam is deflected by the deflection unit 500 and guided along the optical axis OA to the objective lens 107. The deflection unit 500 can be configured such that, when the second particle beam is deflected from the second generator beam axis 401 to the optical axis OA, the first particle beam is deflected by the deflection unit 500 to the first beam stopping unit 509 for stopping the first particle beam. Additionally or alternatively, the particle beam device 100 can have a first movable beam stopping unit 511 for stopping the first particle beam, wherein the first movable beam stopping unit 511 can extend along the first generator beam axis 301.Furthermore, the first movable beam stopping unit 511 can be arranged between the first particle beam generator 300 and the deflection unit 500. The first movable beam stopping unit 511 of this embodiment can be used to stop the first particle beam when the second particle beam is deflected by the deflection unit 500 and guided along the optical axis OA to the objective lens 107. In particular, the first movable beam stopping unit 511 can be a valve. The valve can be configured to be closed when the first particle beam needs to be stopped and can be configured to be opened when the first particle beam is guided along the optical axis OA to the objective lens 107.

[0069] Fig. 8 also shows a third grounded shielding tube 521 extending along the first generator beam axis 301 and disposed at the first opening portion 501A and the second opening portion 501B. When the second particle beam is deflected by the deflection unit 500 and guided along the optical axis OA to the objective lens 107, the third grounded shielding tube 521 largely reduces the influence of the first electrode 519A and the second electrode 519B, as well as the influence of the fringe field of the first deflection electrode 513 and the second deflection electrode 514, on the path of the axis of the first particle beam, thereby improving its beam guidance to the first beam stopping unit 509.

[0070] Fig. 8 also shows a second beam stopping unit 510 for stopping the second particle beam. In other words, the particle beam device 100 may include the second beam stopping unit 510, which is used to stop the second particle beam when the first particle beam is guided along the optical axis OA to the objective lens 107. When the first particle beam is guided along the optical axis OA, the deflection unit 500 deflects neither the first particle beam nor the second particle beam. Therefore, the second particle beam is guided along the second generator beam axis 401 to stop the second particle beam to the second beam stopping unit 510 for stopping the second particle beam. Additionally or alternatively, the particle beam device 100 comprises a second movable beam stopping unit 512 for stopping the second particle beam, wherein the second movable beam stopping unit 512 may extend along the second generator beam axis 401.Furthermore, the second movable beam stopping unit 512 can be arranged between the second particle beam generator 400 and the deflection unit 500. The second movable beam stopping unit 512 can be used to stop the second particle beam when the first particle beam is guided along the optical axis OA to the objective lens 107. In particular, the second movable beam stopping unit 512 can be a valve. The valve can be designed to be closed when the second particle beam needs to be stopped and can be designed to be opened when the second particle beam is guided from the second generator beam axis 401 to the optical axis OA and along the optical axis OA in the direction toward the objective lens 107.

[0071] Fig. 9 shows a schematic view of another embodiment of the particle generating unit 200. Fig. 9 is based on Fig. 8. The same reference numerals denote the same components of the particle generating unit 200. Therefore, the above-mentioned explanations also apply to the embodiment of Fig. 9 is applicable. However, instead of having a first electrode 519A for compensating the electric field and a second electrode 519B for compensating the electric field, a deformation 520 for compensating the electric field is arranged in the deflection unit 500 on the bridge 522.

[0072] The particle beam device 100 provides for selecting the first particle beam comprising the first charged particles or the second particle beam comprising the second charged particles. Furthermore, the particle beam device 100 provides for deflecting the second particle beam comprising the second charged particles from the second generator beam axis 401 to the optical axis OA and along the optical axis OA to guide the second particle beam to the objective lens 107. In addition, the particle beam device 100 is configured to focus the second particle beam comprising the second charged particles in a deflection plane, which is identical to focusing the second particle beam in a further plane at any point on the optical axis OA, wherein the further plane is perpendicular to the deflection plane. Therefore, stigmatic imaging of the object can be provided.In addition, the particle beam device 100 provides that the first particle beam passes through the deflection unit 500 when the first particle beam is selected, wherein the first particle beam is not deflected by the deflection unit 500.

[0073] Other embodiments of the invention will become apparent to those skilled in the art upon consideration of the description and / or upon attempting to practice the invention disclosed herein. It is intended that the description and examples be interpreted as exemplary only, with the true scope and spirit of the invention being indicated by the following claims. List of reference symbols 100 particle beam device 107 Objective lens 109 Aperture unit 114 objects 116 first detector 118 aperture 120 Object Chamber 121 second detector 122 Radiation detector 123 Control unit 124 monitors 200 particle generator unit 300 first particle beam generators 301 first generator beam axis 302 first producer condenser lens 303 first charged particle source 400 second particle beam generator 401 second generator beam axis 402 second generator condenser lens 403 second charged particle source 500 deflection unit 501 first opening 501A first opening part 501B second opening part 502 second opening 503 third opening 504 first pole piece 505 second pole piece 506 conical opening 507 yoke 508 coil 509 first beam stop unit 510 second beam stop unit 511 first movable beam stop unit 512 second movable beam stop unit 513 first deflection electrode 514 second deflection electrode 515 second shielding tube connected to ground 516 first shielding tube connected to ground 517 Entrance page 518 Output page 519 Electrode for compensating the electric field 519A first electrode for compensating the electric field 519B second electrode for compensating the electric field 520 Deformation to compensate the electric field 521 third shielding tube connected to ground 522 Bridge 523 first pump system 524 second pump system 525 third pump system 526 curved axis 527 axes of symmetry A direction D Gap between the first pole piece and the second pole piece OA optical axis R Deflection radius U acceleration voltage U1 Voltage at the first deflection electrode U2 voltage at the second deflection electrode U3 Voltage at the electrode to compensate the electric field U 3A Voltage at the first electrode to compensate the electric field U 3B Voltage at the second electrode to compensate the electric field α half cone angle

Claims

[1] Particle beam device (100) for imaging, analyzing and / or processing an object (114), comprising: - an optical axis (OA); - a first particle beam generator (300) for generating a first particle beam comprising first charged particles, wherein the first particle beam generator (300) has a first generator beam axis (301), wherein the optical axis (OA) and the first generator beam axis (301) are identical; - a second particle beam generator (400) for generating a second particle beam comprising second charged particles, wherein the second particle beam generator (400) has a second generator beam axis (401), wherein the optical axis (OA) and the second generator beam axis (401) are arranged at an angle different from 0° and 180°; - a deflection unit (500) for deflecting the second charged particles from the second generator beam axis (401) to the optical axis (OA) and along the optical axis (OA), the deflection unit (500) having a first opening (501) and a second opening (502) different from the first opening (501), the optical axis (OA) passing through the first opening (501), the second generator beam axis (401) passing through the second opening (502); - at least one objective lens (107) for focusing the first particle beam or the second particle beam onto the object (114), wherein the optical axis (OA) passes through the objective lens (107); and - at least one detector (116, 117, 121, 122) for detecting interaction particles and / or interaction radiation, wherein the interaction particles and the interaction radiation are generated when the first particle beam or the second particle beam impinges on the object (114), wherein the deflection unit (500) has a first operating mode and a second operating mode, wherein in the first operating mode the first charged particles of the first particle beam are guided along the optical axis (OA) and are not deflected by the deflection unit (500), and wherein in the second operating mode the second charged particles of the second particle beam are deflected by the deflection unit (500) from the second generator beam axis (401) to the optical axis (OA) and are guided further along the optical axis (OA). [2] Particle beam device (100) according to claim 1, further comprising at least one of the following: (i) the first particle beam generator (300), which is a liquid metal ion source (303); (ii) the second particle beam generator (400), which is a plasma ion source (403). [3] Particle beam device (100) according to claim 1, further comprising at least one of the following: (i) the first particle beam generator (300) which is a gallium liquid metal ion source (303); (ii) the second particle beam generator (400), which is a noble gas plasma ion source (403); (iii) the second particle beam generator (400), which is an argon plasma ion source (403). [4] Particle beam device (100) according to claim 1, further comprising one of the following: (i) the first particle beam generator (300) being a cold field emission source (303) and the second particle beam generator (400) being a thermionic source (403); (ii) the first particle beam generator (300) being an electron source (303) and the second particle beam generator (400) being an ion source (403); (iii) the first particle beam generator (300) being an ion source and the second particle beam generator (400) being an electron source; (iv) the first particle beam generator (300) being a first ion source and the second particle beam generator (400) being a second ion source. [5] Particle beam device (100) according to one of the preceding claims, further comprising at least one of the following: (i) a first generator condenser lens (302) extending along the first generator beam axis (301), the first generator condenser lens (302) being arranged between the first particle beam generator (300) and the deflection unit (500); (ii) a second generator condenser lens (402) extending along the second generator beam axis (401), the second generator condenser lens (402) being arranged between the second particle beam generator (400) and the deflection unit (500). [6] Particle beam device (100) according to one of the preceding claims, further comprising a beam limiting aperture unit (109) arranged along the optical axis (OA), wherein the beam limiting aperture unit (109) is arranged between the deflection unit (500) and the objective lens (107). [7] Particle beam device (100) according to one of the preceding claims, further comprising one of the following: (i) a first beam stopping unit (509) for stopping the first particle beam; (ii) a first movable beam stopping unit (511) for stopping the first particle beam, wherein the first movable beam stopping unit (511) extends along the first generator beam axis (301) and wherein the first movable beam stopping unit (511) is arranged between the first particle beam generator (300) and the deflection unit (500). [8] Particle beam device (100) according to one of the preceding claims, further comprising one of the following: (i) a second beam stopping unit (510) for stopping the second particle beam; (ii) a second movable beam stopping unit (512) for stopping the second particle beam, wherein the second movable beam stopping unit (512) extends along the second generator beam axis (401) and wherein the second movable beam stopping unit (512) is arranged between the second particle beam generator (403) and the deflection unit (500). [9] Particle beam device (100) according to one of the preceding claims, wherein the deflection unit (500) is a magnetic deflection unit providing an inhomogeneous magnetic field. [10] Particle beam device (100) according to claim 9, wherein the deflection unit (500) comprises a first pole piece (504) and a second pole piece (505) arranged opposite the first pole piece (504), wherein a conical opening (506) having a half cone angle (α) is arranged between the first pole piece (504) and the second pole piece (505), wherein the optical axis (OA) passes through the conical opening (506), and wherein the first pole piece (504) and the second pole piece (505) have a yoke (507) comprising a coil (508) arranged on the yoke (507). [11] Particle beam device (100) according to one of the preceding claims, wherein the deflection unit (500) is an electrostatic deflection unit providing an electric field. [12] Particle beam device (100) according to claim 11, further comprising at least one of the following: (i) the electrostatic deflection unit (500) comprising a first deflection electrode (513) and a second deflection electrode (514) arranged opposite to the first deflection electrode (513); (ii) the electrostatic deflection unit (500) comprising a spherical capacitor; (iii) the electrostatic deflection unit (500) comprising an input side (517) and an output side (518), wherein a first grounded shielding tube (516) is arranged on the input side (517), and wherein a second grounded shielding tube (515) is arranged on the output side (518). [13] Particle beam device (100) according to claim 11 or 12, further comprising one of the following: (i) an electrode (519) for compensating the electric field, wherein the electrode (519) is arranged at the first opening (501) and wherein the electrode (519) is separated from the deflection unit (500); (ii) the first opening (501) comprises a first opening part (501A) and a second opening part (501B), wherein the first opening part (501A) is connected to the second opening part (501B) by a bridge (522) which is part of the deflection unit (500), and wherein an electrode (519A, 519B) for compensating the electric field is arranged at the first opening part (501A) and / or the second opening part (501B) of the first opening (501), wherein the electrode (519A, 519B) is separated from the deflection unit (500); (iii) the first opening (501) comprises a first opening part (501A) and a second opening part (501B), wherein the first opening part (501A) is connected to the second opening part (501B) by a bridge (522) which is part of the deflection unit (500), wherein the first opening part (501A) and the second opening part (501B) are symmetrical, wherein an electrode (519A, 519B) for compensating the electric field is arranged at the first opening part (501A) and / or the second opening part (501B) of the first opening (501), wherein the electrode (519A, 519B) is separated from the deflection unit (500). [14] Particle beam device (100) according to claim 11 or 12, further comprising one of the following: (i) at least one deformation (520) for compensating the electric field, arranged at the first opening (501); (ii) at least one deformation (520) for compensating the electric field, arranged at the first opening (501), wherein the at least one deformation (520) is arranged at an edge of the first opening (501) of the deflection unit (500); (iii) the first opening (501) comprises a first opening part (501A) and a second opening part (501B), wherein the first opening part (501A) is connected to the second opening part (501B) by a bridge (522) which is part of the deflection unit (500), and wherein at least one deformation (520) for compensating the electric field is arranged on the bridge (522); (iv) the first opening (501) comprises a first opening part (501A) and a second opening part (501B), wherein the first opening part (501A) is connected to the second opening part (501B) by a bridge (522) which is part of the deflection unit (500), wherein the first opening part (501A) and the second opening part (501B) are symmetrical, and wherein at least one deformation (520) for compensating the electric field is arranged on the bridge (522). [15] Particle beam device (100) according to one of the preceding claims, wherein the particle beam device (100) is at least one of the following: an electron beam device and an ion beam device.

Images