Apparatus for manufacturing a semiconductor device and method for manufacturing a semiconductor device

Abstract

Apparatus (100) for semiconductor manufacturing, comprising: - a rotary table (11) adapted to rotate a wafer (1); - a nozzle (20) adapted to supply a chemical solution to a processing surface of the wafer (1); and - a nozzle moving part (30) adapted to move the nozzle (20) on such a scanning trajectory (40) that it crosses the machining surface in plan view above the machining surface, wherein: - the nozzle movement part (30) is arranged to move the nozzle (20) along at least a first trajectory (41) and at least a second trajectory (42) on the scan trajectory (40) so that the wafer (1) is etched with the chemical solution, - the at least one first trajectory (41) is a trajectory for reversing at a first reversal point (41a) on one side and a second reversal point (41b) on the other side with respect to a partial area on the scan trajectory (40) that is closest to a rotation axis (1a) of the turntable (11), and - the at least one second trajectory (42) is a trajectory to reverse on the scan trajectory (40) at a third reversal point (42a) and a fourth reversal point (42b) arranged on the same side as the third reversal point (42a) with respect to the partial area closest to the rotation axis (1a), and - the nozzle movement part (30) is set up: - to move the nozzle (20) along a plurality of first trajectories (41) which differ in the first reversal point (41a) or the second reversal point (41b), and - to move the nozzle (20) along a plurality of second trajectories (42) which differ in the third reversal point (42a) or the fourth reversal point (42b).

Description

Background of the inventionArea

[0001] The present invention relates to a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor device. background

[0002] JP 2018-147923 A discloses a substrate processing apparatus. The substrate processing apparatus includes a holding part, a rotating mechanism, a nozzle, a moving mechanism, and a control part. The holding part holds a substrate horizontally. The rotating mechanism rotates the holding part. The nozzle supplies an etchant to the substrate held by the holding part. The moving mechanism moves the nozzle. The control part controls the rotating mechanism and the moving mechanism to perform scan processing while the etchant is supplied from the nozzle to the rotating substrate. During scan processing, a nozzle reciprocates between a first position above the substrate and a second position on the side closer to the outer periphery of the substrate than the first position. The control part performs scan processing a plurality of times while changing the first position.

[0003] In JP 2018-147923 A, a scanning reversal point is provided near the center of a rotation axis. At this time, a singular point of etching amount may occur near the center of the rotation axis due to the scanning reversal. The singular point is a portion where the etching amount changes more drastically than that in its periphery. A singular point of etching amount is likely to occur near the center of the rotation axis due to an inflection point of a chemical solution flow. If such a singular point is added to the singular point due to the scanning reversal, the etching amount profile near the center of the rotation axis may deteriorate. As a result, the residual thickness of an object to be etched may deviate from the standard, and the electrical characteristics of a semiconductor device may deteriorate.

[0004] US 2018 / 0 254 199 A1 discloses a substrate processing apparatus comprising a moving device that moves a nozzle relative to a substrate held by a holding device. A rotating, moving, and feeding device is controlled such that, while the liquid is being supplied from the nozzle to the substrate, the nozzle is moved back and forth over the substrate between a first and a second position on the outer peripheral side of the substrate relative to the first position.

[0005] JP 2020-077735A discloses a substrate treatment apparatus comprising a nozzle moving mechanism capable of moving a nozzle part along the upper surface of a substrate in a radial direction from the outermost position facing an outer peripheral edge of the upper surface of the substrate.

[0006] KR 10 2020 075 182A and US 2017 / 0 001 221 A1 disclose further devices for substrate processing in which a nozzle is moved over a rotating substrate. Summary

[0007] The present invention has been made to solve the above-described problem and is directed to obtaining a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor device capable of improving in-plane uniformity.

[0008] The object underlying the invention is achieved in a device for semiconductor production according to the invention with the features of claim 1 and in a method for producing a semiconductor device according to the invention with the features of claim 9. Advantageous further developments are the subject of the respective dependent claims.

[0009] The features and advantages of the present invention can be summarized as follows.

[0010] According to one aspect of the present invention, a semiconductor manufacturing apparatus comprises a turntable that rotates a wafer, a nozzle that supplies a chemical solution to a processing surface of the wafer, and a nozzle moving part that moves the nozzle along a scanning trajectory such that it traverses the processing surface above the processing surface in plan view. The nozzle moving part moves the nozzle along at least a first trajectory and at least a second trajectory on the scanning trajectory so that the wafer is etched with the chemical solution. The at least one first trajectory is a trajectory for reversing at a first reversal point on one side and a second reversal point on the other side with respect to a portion of the scanning trajectory closest to a rotation axis of the turntable, and the at least one second trajectory is a trajectory.to reverse the scan trajectory at a third reversal point on the scan trajectory and a fourth reversal point located on the same side as the third reversal point with respect to the portion closest to the rotation axis. The nozzle moving part is configured to move the nozzle along a plurality of the first trajectories that differ at the first reversal point or the second reversal point, and to move the nozzle along a plurality of the second trajectories that differ at the third reversal point or the fourth reversal point.

[0011] According to one aspect of the present invention, a method for manufacturing a semiconductor device comprises loading a wafer onto a turntable and moving, by means of a nozzle moving part that moves a nozzle on such a scanning trajectory that it traverses a processing surface of the wafer in plan view above the processing surface while rotating the wafer using the turntable, the nozzle along a first trajectory and a second trajectory on the scanning trajectory to supply a chemical solution from the nozzle to the processing surface and etch the wafer, wherein the first trajectory is a trajectory for reversing at a first reversal point on one side and a second reversal point on the other side with respect to a portion on the scanning trajectory closest to a rotation axis of the turntable, and the second trajectory is a trajectory,to reverse the scan trajectory at a third reversal point on the scan trajectory and a fourth reversal point located on the same side as the third reversal point with respect to the portion closest to the rotation axis. The nozzle moving part moves the nozzle along a plurality of the first trajectories that differ at the first reversal point or the second reversal point, as well as along a plurality of the second trajectories that differ at the third reversal point or the fourth reversal point.

[0012] Other and further objects, features and advantages of the invention will become more fully apparent from the following description. Short description of the drawings Fig. 1 is a perspective view of a semiconductor manufacturing apparatus according to a first embodiment. Fig. Figure 2 is a diagram illustrating a first trajectory. Fig. Figure 3 is a diagram illustrating a second trajectory. Fig. Figure 4 is a diagram illustrating the central area. Fig. Figures 5 to 7 are diagrams each illustrating examples of the first trajectory. Fig. Figures 8 to 10 are diagrams each illustrating examples of the second trajectory. Fig. 11 is a diagram illustrating a profile of an etching amount along the first trajectory. Fig. 12 is a diagram illustrating a profile of an etching amount along the second trajectory. Fig. 13 is a diagram illustrating an average value of etching amounts along a plurality of combinations of the first trajectories 41 and the second trajectories. Fig. Figure 14 is a diagram illustrating an etching process. Fig. Figure 15 is a diagram illustrating a variety of steps constituting the scanning process. Description of embodiments

[0013] A semiconductor manufacturing apparatus and a method for manufacturing a semiconductor device according to an embodiment of the present invention will be described with reference to the accompanying drawings. Components that are identical or corresponding to each other are denoted by the same reference numerals, and repeated descriptions thereof may be omitted in some cases. First embodiment

[0014] Fig. 1 is a perspective view of a semiconductor manufacturing apparatus 100 according to a first embodiment. The semiconductor manufacturing apparatus 100 is an apparatus for performing a wet etching treatment. The semiconductor manufacturing apparatus 100 includes a turntable 11 that rotates a wafer 1. In a Fig. In the example illustrated in Figure 1, the wafer 1 rotates in a rotation direction 1c about a rotation axis 1a. In the rotation mechanism part 10, the turntable 11 rotates by means of a connection to a rotation motor 12.

[0015] A wafer holding part 11a, which holds the wafer 1, is integrated into the turntable 11. The wafer holding part 11a is, for example, a chuck pin. The wafer holding part 11a holds the wafer 1 to position its center near the rotation axis 1a of the turntable 11 or on the rotation axis 1a of the turntable 11.

[0016] A nozzle 20 ejects a chemical solution and supplies the chemical solution to a processing surface of the wafer 1. A nozzle moving part 30 includes a scanning shaft 31, a scanning arm 32, and a scanning motor 33. The nozzle 20 is connected to the scanning motor 33 via the scanning shaft 31 and the scanning arm 32. As a result, the nozzle moving part 30 moves the nozzle 20 along a scanning trajectory 40 such that it traverses the processing surface of the wafer 1 above the processing surface of the wafer 1 in plan view. The nozzle moving part 30 causes the nozzle 20 to perform scanning such that the nozzle 20 passes near the rotation axis 1a or on the rotation axis 1a. The nozzle moving part 30 moves the nozzle 20 in a rotational movement, for example, in a direction along the processing surface of the wafer 1.In the present embodiment, the nozzle moving part 30 moves the nozzle 20 along a first trajectory and a second trajectory, which will be described below, on the scanning trajectory 40 so that the wafer 1 is etched with a chemical solution.

[0017] The semiconductor manufacturing apparatus 100 includes a water nozzle 50 that ejects water, a thickness measuring sensor 60, and a thickness measuring device 103 connected to the thickness measuring sensor 60. The semiconductor manufacturing apparatus 100 includes an operating PC 101 and a control PLC (programmable logic controller) 102.

[0018] The control PLC 102 includes a motor driver 102d for driving the rotary motor 12 and a motor driver 102e for driving the scanning motor 33. The control PLC 102 includes a chemical solution supply valve 102b to be connected to the nozzle 20 and a water supply valve 102c to be connected to the water nozzle 50. An opening and closing instruction of the chemical solution supply valve 102b and the water supply valve 102c, and an operation instruction to the motor drivers 102d and 102e, are executed according to a sequence of control sequences managed by the PLC 102a. The control PLC 102 also performs control for peripheral mechanism units such as a loading port, a conveyor robot, and a chemical solution supply unit (not illustrated).

[0019] The operator PC (Personal Computer) 101 is mounted as a higher-level system of the control PLC 102. The operator PC 101 includes an MMIF (Human Machine Interface) 101a and a PC 101b. The operator PC 101 performs FA (Factory Automation) communication with the higher-level system.

[0020] A processing recipe is previously registered in the PC 101b via the MM-IF 101a. A recipe for processing wafer 1 is selected in response to a recipe instruction from the MM-IF 101a and a recipe instruction via FA communication. The PC 101b reflects the content of the selected recipe to a parameter of a control sequence of the PLC 102a to instruct the PLC 102a to start an operation. The PLC 102a executes a device control sequence with the reflected parameter.

[0021] Fig. Figure 2 is a diagram illustrating a first trajectory 41. A movement of the nozzle 20 along the first trajectory 41 on the scan trajectory 40 is hereinafter referred to as a first scan operation. The first trajectory 41 is a trajectory for reversing at a first reversal point 41a on one side and a second reversal point 41b on the other side of a portion of the scan trajectory 40 closest to the rotation axis 1a. In a Fig. In the example illustrated in Figure 2, the scan trajectory 40 passes through the rotation axis 1a. Accordingly, the portion on the scan trajectory 40 closest to the rotation axis 1a is a portion on the rotation axis 1a. The first reversal point 41a and the second reversal point 41b are each arranged on the opposite sides with respect to the rotation axis 1a on the scan trajectory 40. The first reversal point 41a and the second reversal point 41b are each provided at positions sufficiently spaced from the rotation axis 1a. The first scan operation is repeatedly performed between the first reversal point 41a and the second reversal point 41b.

[0022] Fig. 3 is a diagram illustrating a second trajectory 42. Movement of the nozzle 20 along the second trajectory 42 on the scanning trajectory 40 will hereinafter be referred to as a second scan. The second trajectory 42 is a trajectory for reversing on the scanning trajectory 40 at a third reversal point 42a on the scanning trajectory 40 and a fourth reversal point 42b located on the same side as the third reversal point 42a with respect to a portion closest to the rotation axis 1a. The third reversal point 42a and the fourth reversal point 42b are located on the same side with respect to the rotation axis 1a on the scanning trajectory 40. The second scan is repeatedly performed between the third reversal point 42a and the fourth reversal point 42b.

[0023] The first reversal point 41a and the second reversal point 41b are located outside a central region 1b as a predetermined range from the rotation axis 1a in plan view. The second trajectory 42 is located outside the central region 1b in plan view.

[0024] Fig. Figure 4 is a diagram illustrating the central region 1b. Data 71a and 71b each represent etching amounts when etching was performed in the same first scan. Data 71a is data in a state where the activity of the chemical solution to be used for etching is high. Data 71b is data in a state where the activity of a chemical solution to be used for etching is low. Activity is also referred to as reactivity. Fig. 4 illustrates data in a case where the first reversal point 41a and the second reversal point 41b are each located at predetermined positions equally spaced from the rotation axis 1a.

[0025] Examples of an etching method include a method in which etching is always performed with a new chemical solution without recycling a chemical solution, and a method in which etching is performed with a recycled chemical solution while replenishing or regenerating a component of the chemical solution. In both methods, etching is usually performed while maintaining the activity of the chemical solution. Accordingly, an etching amount constantly changes more sharply near the rotation axis 1a than that in the periphery thereof. Such a portion where a profile of an etching amount changes more drastically than that in the periphery thereof is represented by a singular point. To improve etching uniformity, etching to replenish a singular point may be required.

[0026] As in Fig. As illustrated in FIG. 4, when etching is performed along the first trajectory 41, an etching amount increases or decreases with increasing distance from the rotation axis 1a. In the present embodiment, the central region 1b is a region from the rotation axis 1a to a point where an increase or decrease in the etching amount stops. In other words, the central region 1b is a region up to a position where the increase or decrease in the etching amount from the rotation axis 1a transitions to flatness.

[0027] Sub-areas that are Fig. The frames 72a and 72b illustrated in Figure 4 are respectively singular points of etching amounts due to the first reversal point 41a and the second reversal point 41b. The second scan is particularly effective for supplementing etching amounts by the first scan outside the central region 1b.

[0028] Fig. 5 to 7 are diagrams each illustrating examples of the first trajectory 41. The first trajectory 41 includes, for example, three types of first trajectories 411, 412, and 413. In the Fig. In the examples illustrated in Figures 5 to 7, a first reversal point 411a and a second reversal point 411b of the first trajectory 411 are equally spaced from the rotation axis 1a. Similarly, a first reversal point 412a and a second reversal point 412b of the first trajectory 412 are equally spaced from the rotation axis 1a, and a first reversal point 413a and a second reversal point 413b of the first trajectory 413 are equally spaced from the rotation axis 1a. The first trajectories 411, 412, and 413 increase in this order in the range of the scanning process.

[0029] Fig. 8 to 10 are diagrams each illustrating examples of the second trajectory 42. The second trajectory 42 includes, for example, three types of second trajectories 421, 422, and 423. A third turning point 421a of the second trajectory 421 and a third turning point 422a of the second trajectory 422 are located at the same positions. A fourth reversal point 422b of the second trajectory 422 is further away from the rotation axis 1a than a fourth reversal point 421b of the second trajectory 421. A third reversal point 423a of the second trajectory 423 is further away from the rotation axis 1a than the third reversal point 422a of the second trajectory 422. A fourth reversal point 423b of the second trajectory 423 is further away from the rotation axis 1a than the fourth reversal point 422b of the second trajectory 422.

[0030] Fig. 11 is a diagram illustrating a profile of an etching amount along the first trajectory 41. Fig. 11 illustrates etching amounts in a case where the first scanning operation was performed along seven types of first trajectories 41. In Fig. For example, 11 ±30 means that a range from -30 to +30 is scanned on the scan trajectory 40 with the rotation axis 1a set to zero.

[0031] Fig. 12 is a diagram illustrating a profile of an etching amount along the second trajectory 42. Fig. 12 illustrates etching amounts in a case where the second scanning operation was performed along three types of second trajectories 42. In Fig. 12, for example, -15 to -40 means that a range from -15 to -40 is scanned on the scan trajectory 40 with the rotation axis 1a set to zero.

[0032] In Fig. 11 and Fig. 12, a left end indicates the rotation axis 1a and a profile corresponding to a radius is illustrated. In the Fig. 11 according to the first scan, a range until an increase in the etching amount from the rotation axis 1a changes into a flatness is greatest at a profile of ±30. In a Fig. In the example illustrated in Figure 11, the central region 1b is determined based on a profile of ±30.

[0033] In the Fig. In the second scanning process illustrated in Figure 12, all third reversal points 42a are set at a position of -15 outside the central area 1b. In Fig. 12, the etching amount in the central region 1b is also tilted. The reason for this is that at a position of -15, such a flow occurred that a chemical solution spread into the central region 1b.

[0034] Fig. 13 is a diagram illustrating an average value of etching amounts along a plurality of combinations of the first trajectories 41 and the second trajectories 42. One or more of seven types of first scans and three types of second scans shown in Fig. 11 and 12, respectively, are selected, and the selected scans are combined in units of 10 percent. That is, etching is performed for combinations obtained by switching a ratio of the selected scans to an etching process in units of 10 percent. Fig. Figure 13 illustrates a result of averaging etching amounts by the 10 combinations with high uniformity in etching amount among the combinations. The respective ordinate and abscissa scales are the same as those shown in Fig. 11 and 12 respectively.

[0035] Each of the ten combinations includes four types of scanning: ±40, ±60, and ±80 among the first scans, and -15 to -40 among the second scans. The other types of scanning are not effective for improving etching uniformity. It goes without saying that the effective scanning varies depending on different conditions. Examples of the different conditions include a diameter of the wafer 1, a number of revolutions of the wafer 1, a speed of scanning, an activity of a chemical solution, a flow rate of ejecting a chemical solution, an area setting of the central area 1b, a position of an inversion point for each scan, and a combination unit.

[0036] Thus, in the present embodiment, in-plane uniformity can be improved by combining the first trajectories 41 and the second trajectories 42. A singular point of etching amount due to an inflection point of a chemical solution flow is easily apparent near the rotation axis 1a. This singular point can be suppressed by the first scan. In this case, parameters such as the number of revolutions of the wafer 1, the scanning range, the scanning speed, and the flow rate of the chemical solution discharge can be optimized.

[0037] At a position away from the rotation axis 1a, a profile of an etching amount tends to decrease and increase toward the outer periphery from the center side. Accordingly, in-plane uniformity may deteriorate by being dragged along by a portion where an etching amount is small. The second scan allows the etching amount to be compensated in the portion where the etching amount is small. In this case, parameters such as a number of revolutions of the wafer 1, a scanning area, a scanning speed, and a chemical solution discharge flow rate can be optimized.

[0038] A profile of an etching amount near the rotation axis 1a may deteriorate due to a singular point being added to a singular point near the rotation axis 1a due to a reversal of a scanning operation. On the other hand, in the present embodiment, there is no reversal point in the central region 1b, and the singular point of the etching amount due to the reversal point of the scanning operation can be eliminated from the central region 1b. Therefore, the in-plane uniformity can be further improved. The reproducibility of a profile in the central region 1b can be improved. The central region 1b is not limited to those in the Fig. 4, but may be suitably set as a predetermined range from the rotation axis 1a.

[0039] The nozzle moving part 30 can move the nozzle 20 along a plurality of first trajectories 41 that differ in the first reversal point 41a or the second reversal point 41b. The nozzle moving part 30 can move the nozzle 20 along a plurality of second trajectories 42 that differ in the third reversal point 42a or the fourth reversal point 42b. When a position of the reversal point is changed in the first and second scanning operations, a singular spot effect can be dispersed. Accordingly, the uniformity of etching can be further improved.

[0040] In the present embodiment, scanning can be performed while a position for the fourth reversal point 42b is located on the side of the second trajectory 42 farther from the rotation axis 1a. As a result, an effect of a singular point on an etching amount due to a reversal point of a scan at a position farther from the rotation axis 1a can also be suppressed.

[0041] Fig. 14 is a diagram illustrating an etching process. First, a wafer holding process is performed (step 1). The nozzle 20 is in a standby position, a processing cup (not shown) is located at a starting point, the turntable 11 is located at a starting point, and a chuck pin as the wafer holding part 11a is in an open state. In this state, the turntable 11 is loaded with the wafer 1. Specifically, an unillustrated conveying robot holding the wafer 1 feeds the wafer 1 onto the turntable 11. After that, the chuck pin is closed to hold the wafer 1 in the wafer holding part 11a.

[0042] Next, an etching treatment process is performed (step 2). First, the processing cup is positioned to recover the chemical solution (step 201). The rotary motor 12 then rotates the turntable 11 in the rotation direction 1c (step 202). The nozzle 20 attached to the scanning arm 32 is then moved to an upper position relative to a processing surface by an up-down movement of the scanning shaft 31 and a rotational movement of the scanning motor 33 (step 203). Afterward, a scanning process is performed (step 204). In the scanning process, the nozzle 20 is caused to perform scanning by the rotational movement of the scanning motor 33 to adjust the discharge of the chemical solution.

[0043] The operating PC 101 and the control PLC 102 each constitute a control section that controls the nozzle movement section 30 in response to a machining recipe containing a plurality of steps. The first reversal point 41a and the second reversal point 41b or the third reversal point 42a and the fourth reversal point 42b can be set for each of the plurality of steps in the control section. A scanning operation of the nozzle 20 uses the two reversal points set for each of the plurality of steps constituting the machining recipe as the operating range.

[0044] Step 204 includes a step 204a in which a first scan is performed, and a step 204b in which a second scan is performed. In step 204, the nozzle 20 is moved along the first trajectory 41 and the second trajectory 42 above the processing surface of the wafer 1 while the wafer 1 is being rotated by the turntable 11. As a result, a chemical solution is supplied from the nozzle 20 to the processing surface of the wafer 1 to etch the wafer 1.

[0045] The type of scanning and the sequence of steps can be determined depending on the role or function of each scanning process. For example, if etching near the rotation axis 1a is prevented from being different, the first scanning process can be performed starting with the second scanning process. In this case, etching can be prevented from being different by suppressing etching near the rotation axis 1a during a transition to the first scanning process.

[0046] If etching is terminated by utilizing detection of an etching end point, the etching end point is detected while the thickness of an object to be etched is sequentially measured by the thickness measuring sensor 60 and the thickness measuring device 103. A scan in the final step related to the etching end point may be a scan having the best uniformity among scans in the plurality of steps constituting the processing recipe. That is, the nozzle moving part 30 sequentially moves the nozzle 20 along at least one first trajectory 41 and at least one second trajectory 42, and finally moves the nozzle 20 along the trajectory having the best uniformity among the at least one first trajectory 41 and the at least one second trajectory 42. As a result, an effect of variation in the uniformity at the etching end point can be suppressed.

[0047] After step 204, the nozzle 20 is returned to the standby position by an up-down movement of the scanning shaft 31 and a rotational movement of the scanning motor 33 (step 205). A rinsing and drying process is then performed (step 303). The processing cup is first positioned for rinsing recovery (step S301). Water is then jetted from the water nozzle 50 near the rotation axis 1a to perform rinsing processing (step S302). Subsequently, the rotary table 11 is rotated at high speed by the rotary motor 12 to perform shake-off drying processing (step S303). The rotation of the rotary table 11 is then stopped to return the processing cup to the starting point (step 304).

[0048] Next, a wafer extrusion or removal process is performed (step 4). The chuck pin is opened to remove wafer 1 using the conveyor robot. This series of processes enables wafer 1 to undergo a highly uniform etching treatment.

[0049] In the present embodiment, etching of the wafer 1 according to the first trajectory 41 and etching of the wafer 1 according to the second trajectory 42 are performed sequentially. Accordingly, production efficiency can be prevented from decreasing because the number of processes increases. The activity of a chemical solution for etching can decrease by continuously using it. In the present embodiment, when the first scanning and the second scanning are performed together, it can be assumed that the first scanning and the second scanning are each performed under similar chemical solution conditions. Accordingly, an acceptable range of deterioration of the chemical solution can be easily judged. A correction coefficient of a processing time period can be set depending on the deterioration of the chemical solution.In this case, the same correction coefficient can be used in both the first and second scans. Therefore, manufacturing processes can be simplified.

[0050] Fig. 15 is a diagram illustrating a plurality of steps 11 to 16 constituting the scanning process. Fig. Figure 15 illustrates an example of a plurality of steps related to the scanning process in a time series. Fig. 15 illustrates a temporal change of a position of the nozzle 20. In a Fig. 15 are the examples shown in Fig. 5 to 10 illustrated scanning processes are combined.

[0051] The first scan according to the first trajectory 411, the first scan according to the first trajectory 413, and the second scan according to the second trajectory 421 are performed in step 11, step 12, and step 13, respectively. The second scan according to the second trajectory 422, the second scan according to the second trajectory 423, and the first scan according to the first trajectory 412 are performed in step 14, step 15, and step 16, respectively.

[0052] To switch the steps in the scanning process, the plurality of first trajectories 41 that differ in the first turning point 41a or the second turning point 41b, or the plurality of second trajectories 42 that differ in the third turning point 42a or the fourth turning point 42b, may be switched. Furthermore, to switch the steps, the first trajectories 41 and the second trajectories 42 may be switched. If there is a turning point of the trajectory after switching the moving direction of the nozzle 20 when switching the trajectories, the nozzle moving part 30 causes the nozzle 20 to switch at the turning point. If there is no turning point of the trajectory after switching the moving direction of the nozzle 20 when switching the trajectories, the nozzle moving part 30 causes the nozzle 20 to switch at a time when the nozzle exits the central region 1b.

[0053] At an end point 1-2a in step 11, there is a second reversal point 413b in the moving direction of the nozzle 20 in step 12. Accordingly, the nozzle 20 does not reverse at the end point 1-2a, but is operated so that the end point 1-2a is changed into a start point 1-2c of a scan in step 12 as it is.

[0054] At an end point 2-3a in step 12, no turning point exists in the movement direction of the nozzle 20 in step 13. Accordingly, the nozzle 20 turns around at a point 2-3b outside the central region 1b. As a result, a third turning point 421a in step 13 is changed to a starting point 2-3c of a scan in step 13. Between the end point 2-3a and the starting point 2-3c, step 13 has already progressed. However, a scan is performed at a maintained movement speed in step 12.

[0055] At an end point 3-4a in step 13 and an end point 4-5a in step 14, there is a turning point in the subsequent step in the moving direction of the nozzle 20 as at the end point 1-2a in step 11. Accordingly, the end points 3-4a and 4-5a are changed to starting points 3-4c and 4-5c of the scanning process in the subsequent step, respectively.

[0056] At an end point 5-6a in step 15, there is no turning point in step 16 in the direction of movement of the nozzle 20. However, the nozzle 20 was already outside the central area 1b and therefore immediately turns around at a point 5-6b. As a result, a second turning point 412b in step 16 becomes a starting point 5-6c of the scanning process in step 16. Step 16 has already progressed between the end point 5-6a and the starting point 5-6c. However, a scanning process is performed at a maintained movement speed in step 15.

[0057] Such a process allows the steps to be seamlessly connected, even if a position of the nozzle 20 is in the middle of a trajectory at the end of the step. When switching steps, the steps can be seamlessly connected without returning the nozzle 20 to the starting point. Accordingly, singular points due to the connection between the steps can be suppressed.

[0058] When etch endpoint detection is used as a method to terminate etching, a processing time in a final step may vary. The variation is in Fig. 15 as an endpoint shift (-) and an endpoint shift (+). Accordingly, the scanning process in step 16 can be set as the last step with respect to the etching endpoint as a scanning process with the best uniformity among steps S11 to 16. In the Fig.In the example illustrated in Figure 15, the scan with the best uniformity is the first scan according to the first trajectory 412. As a result, an effect of a variation at the etching endpoint on the uniformity can be suppressed.

[0059] A configuration of the semiconductor manufacturing apparatus 100 according to the present embodiment is not limited to the configurations described so far. For example, the nozzle moving part 30 is not limited to a rotary mechanism but may be a translational mechanism. That is, the nozzle 20 may perform a translational movement above the wafer 1. The wafer holding part 11a does not have to be a chuck pin but may be a vacuum chuck. The number of chemical solutions used for etching is not limited to one but may include several. In this case, a plurality of nozzles 20 may be arranged to handle a plurality of chemical solutions. The plurality of nozzles 20 may each perform scanning operations separately or independently, or may perform scanning operations simultaneously or in an interconnected manner.In this case, too, an effect similar to that in the present embodiment can be obtained by combining the first scanning and the second scanning.

[0060] Examples of an object to be etched include Si as the base material of a semiconductor wafer and a film formed on a surface of the semiconductor wafer. Examples of the film include SiO2-based, SiN-based, organic-based, and metal-based films.

[0061] Examples of chemical solutions used for etching include inorganic acid-based, inorganic base-based, and organic-based liquids. Specifically, the chemical solutions used can be a mixed solution of HF and HNO3 for etching Si, HF for etching SiO2-based materials, or BHF for etching SiO2-based materials and H3PO4 for etching SiN-based materials. For each chemical solution, uniformity is improved by combining the first and second scans.

[0062] Wafer 1 may be made of a wide-bandgap semiconductor. Examples of wide-bandgap semiconductors include silicon carbide, a gallium nitride-based material, or diamond. The present embodiment makes it possible to prevent the electrical characteristics of wafer 1 from deteriorating and effectively utilize the performance of the wafer 1 formed of the wide-bandgap semiconductor.

[0063] As described above, according to the present embodiment, the profile of the etching amount can be smoothed by preventing an inflection point of the etching amount from occurring not only near the rotation axis 1a but also on the entire surface of the wafer 1. Therefore, the uniformity of the etching amount can be improved. As a result, the residual thickness of the object to be etched cannot easily deviate from the standard, and the risk of deterioration of the electrical characteristics of the semiconductor device can be reduced.

[0064] However, technical features explained in this embodiment can be suitably combined for use.

[0065] In the semiconductor manufacturing apparatus and the method for manufacturing a semiconductor device according to the present invention, in-plane uniformity can be improved by moving a nozzle that supplies a chemical solution along a first trajectory and a second trajectory.

Claims

[1] Apparatus (100) for semiconductor manufacturing, comprising: - a rotary table (11) adapted to rotate a wafer (1); - a nozzle (20) adapted to supply a chemical solution to a processing surface of the wafer (1); and - a nozzle moving part (30) adapted to move the nozzle (20) on such a scanning trajectory (40) that it crosses the machining surface in plan view above the machining surface, wherein: - the nozzle movement part (30) is arranged to move the nozzle (20) along at least a first trajectory (41) and at least a second trajectory (42) on the scan trajectory (40) so that the wafer (1) is etched with the chemical solution, - the at least one first trajectory (41) is a trajectory for reversing at a first reversal point (41a) on one side and a second reversal point (41b) on the other side with respect to a partial area on the scan trajectory (40) that is closest to a rotation axis (1a) of the turntable (11), and - the at least one second trajectory (42) is a trajectory to reverse on the scan trajectory (40) at a third reversal point (42a) and a fourth reversal point (42b) arranged on the same side as the third reversal point (42a) with respect to the partial area closest to the rotation axis (1a), and - the nozzle movement part (30) is set up: - to move the nozzle (20) along a plurality of first trajectories (41) which differ in the first reversal point (41a) or the second reversal point (41b), and - to move the nozzle (20) along a plurality of second trajectories (42) which differ in the third reversal point (42a) or the fourth reversal point (42b). [2] Apparatus (100) for semiconductor manufacturing according to claim 1, which is arranged in such a way: - that the first reversal point (41a) and the second reversal point (41b) are arranged in plan view outside a central area (1b) as a predetermined area from the rotation axis (1a) and - that the at least one second trajectory (42) is arranged outside the central region (1b) in plan view. [3] Apparatus (100) for semiconductor manufacturing according to claim 2, which is arranged in such a way: - that when etching is carried out along the first trajectory (41), an etching amount increases or decreases with increasing distance from the rotation axis (1a) and - that the central region (1b) is a region from the axis of rotation (1a) to a point where the increase or decrease of the etching amount stops. [4] Apparatus (100) for semiconductor manufacturing according to claim 2 or 3, - which further comprises a control part (101, 102) which is arranged to control the nozzle movement part (30) in accordance with a processing recipe containing a plurality of steps, and - which is arranged in such a way - that the first reversal point (41a) and the second reversal point (41b) or the third reversal point (42a) and the fourth reversal point (42b) can be set for each of the plurality of steps in the control part (101, 102), and - that when the steps are changed, the nozzle movement part (30) - causes, if a reversal point is set for a step after changing the steps in a direction of movement of the nozzle (20) at a time of the change, the nozzle (20) to reverse at the reversal point, and - causes, if the reversal point for the step after the change in the direction of movement of the nozzle (20) is not set at the time of the change, the nozzle (20) to reverse at a time at which the nozzle (20) exits the central region (1b) after the change. [5] Device (100) for semiconductor production according to one of the preceding claims, - which further comprises a control part (101, 102) which is arranged to control the nozzle movement part (30) in accordance with a processing recipe containing a plurality of steps, and - which is arranged such that the first reversal point (41a) and the second reversal point (41b) or the third reversal point (42a) and the fourth reversal point (42b) can be set for each of the plurality of steps in the control part (101, 102). [6] Apparatus (100) for semiconductor manufacturing according to one of the preceding claims, wherein the nozzle moving part (30) is arranged: - to move the nozzle (20) along the at least one first trajectory (41) and the at least one second trajectory (42) in sequence and - finally, to move the nozzle (20) along the trajectory with the best uniformity among the at least one first trajectory (41) and the at least one second trajectory (42). [7] A semiconductor manufacturing apparatus (100) according to any one of the preceding claims, wherein the wafer (1) is made of a wide band gap semiconductor. [8] The semiconductor manufacturing apparatus (100) of claim 7, wherein the wide band gap semiconductor is silicon carbide, a gallium nitride-based material, or diamond. [9] Method for manufacturing a semiconductor device, comprising: - loading a turntable (11) with a wafer (1); and - moving, by means of a nozzle moving part (30) which moves a nozzle (20) on such a scan trajectory (40) that it traverses a processing surface of the wafer (1) in plan view above the processing surface while the wafer (1) is rotated using the turntable (11), the nozzle (20) along a first trajectory (41) and a second trajectory (42) on the scan trajectory (40) in order to supply a chemical solution to the processing surface from the nozzle (20) and to etch the wafer (1), where: - the first trajectory (41) is a trajectory for reversing at a first reversal point (41a) on one side and a second reversal point (41b) on the other side with respect to a partial area on the scanning trajectory (40) closest to a rotation axis (1a) of the turntable (11), - the second trajectory (42) is a trajectory for reversing on the scan trajectory (40) at a third reversal point (42a) on the scan trajectory (40) and a fourth reversal point (42b) arranged on the same side as the third reversal point (42a) with respect to the sub-region closest to the rotation axis (1a), and - the nozzle movement part (30): - the nozzle (20) moves along a plurality of first trajectories (41) which differ in the first reversal point (41a) or the second reversal point (41b), and - the nozzle (20) moves along a plurality of second trajectories (42) which differ in the third reversal point (42a) or the fourth reversal point (42b). [10] A method of manufacturing the semiconductor device according to claim 9, wherein etching of the wafer (1) according to the first trajectory (41) and etching of the wafer (1) according to the second trajectory (42) are performed sequentially.

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