POWER SHEMULATOR MODULE WITH CURRENT SENSOR ROD

Abstract

The present invention relates to a power semiconductor module with a current sensor rotating bar.A power semiconductor module comprises an electrically insulating frame with opposing mounting sides and a boundary wall defining a perimeter of the electrically insulating frame; a first substrate arranged within the frame; power semiconductor dies attached to the substrate; signal pins attached to the substrate and electrically connected to the power semiconductor dies; a busbar attached to the substrate and extending through the boundary wall; a receptacle in the boundary wall configured to receive a current sensor module and exposing a portion of the busbar, the exposed portion of the busbar having an opening; and a torsion bar extending from a first side wall of the receptacle to the exposed portion of the busbar without obstructing the opening in the busbar, the first torsion bar forming an axis of rotation in the receptacle.Furthermore, a power electronics arrangement containing the power semiconductor module and a corresponding manufacturing process are described.

Description

BACKGROUND

[0001] Power semiconductor modules, as exemplified in DE 102013225627 B4, are typically attached on one side to a printed circuit board (PCB) and on the opposite side to a base plate to form a power electronics assembly. The PCB usually includes one or more in-phase current sensors for high-power control applications to detect each phase current delivered by the power semiconductor module to, for example, an electric motor.

[0002] One implementation of such a common-phase current sensor uses a core-based principle of magnetic current sensing. Typically, a core-based common-phase current sensor is a magnetic sensor that implements a field concentrator (e.g., an iron core wound around a busbar) to focus a magnetic field generated by a current flowing through the busbar onto a magnetic sensing element, allowing a measurement to be obtained. Another implementation of a common-phase current sensor uses a coreless principle of magnetic current sensing. Typically, a coreless common-phase current sensor is a magnetic sensor that implements one or more sensing elements near a busbar, allowing a measurement to be obtained based on a magnetic field generated by a current flowing through the busbar, as detected by the one or more sensing elements.

[0003] A current sensor module for in-phase current that uses a coreless magnetic current sensing principle should be precisely aligned with the corresponding power rail of the power semiconductor module to ensure accurate current sensing. That is, the current sensor module should be positioned symmetrically with respect to the centerline of the power rail. The centerline of the power rail changes for different rail thicknesses if one side of the rail, usually the top, is in a fixed mounting position. For example, thinner power rails (e.g., 1 mm thick) are typically used for power semiconductor modules with relatively low currents, and thicker power rails (e.g., 1.5 mm thick) are typically used for power semiconductor modules with relatively high currents. If both types of power rails have the same fixed mounting position (e.g.,The centerline around which the current sensor module should be symmetrically positioned depends on the thickness of the busbar used (top side). Accordingly, different current sensor modules with different designs are typically used for each busbar thickness. If the same current sensor module is used for busbars of different thicknesses but with the same fixed mounting position, inaccurate current sensing would result, as the current sensor module may only be designed for ideal placement at one specific busbar thickness. Requiring different current sensor modules based on busbar thickness increases the risk of using the wrong module and increases tooling costs, as more than one type of current sensor module must be handled during the assembly process.

[0004] Therefore, there is a need for a power semiconductor module that can accommodate a single current sensor module type, regardless of the power busbar thickness. SUMMARY

[0005] According to one embodiment of a power semiconductor module, the power semiconductor module comprises the following: an electrically insulating frame with a first mounting side, a second mounting side opposite the first mounting side, and a boundary wall defining a perimeter of the electrically insulating frame; a first substrate arranged within the electrically insulating frame; a plurality of power semiconductor dies attached to the first substrate; a plurality of signal pins attached to the first substrate and electrically connected to the power semiconductor dies; a busbar attached to the first substrate and extending through the boundary wall; a recess in the boundary wall configured to accommodate a current sensor module and exposing a portion of the busbar, the exposed portion of the busbar having an opening;and a first torsion bar extending from a first side wall of the receptacle and towards the exposed part of the conductor rail without blocking the opening in the conductor rail, the first torsion bar forming an axis of rotation in the receptacle.

[0006] According to one embodiment of the power electronics arrangement, the power electronics arrangement comprises the following: a power semiconductor module comprising an electrically insulating frame with a boundary wall defining a perimeter of the electrically insulating frame, a busbar extending through the boundary wall, a receptacle in the boundary wall exposing a portion of the busbar, the exposed portion of the busbar having an opening, and a first rotating bar extending from a first side wall of the receptacle to the exposed portion of the busbar without obstructing the opening; a metal base plate attached to a first mounting side of the power semiconductor module; and a printed circuit board attached to a second mounting side of the power semiconductor module opposite the first mounting side.and a current sensor module arranged in the receptacle in the boundary wall of the power semiconductor module, wherein a part of the current sensor module extends through the opening in the busbar, the first rotating bar forming an axis of rotation for the current sensor module.

[0007] According to one embodiment of a method for manufacturing a power electronics arrangement, the method comprises: providing a power semiconductor module comprising an electrically insulating frame with a boundary wall defining a perimeter of the electrically insulating frame, a busbar extending through the boundary wall, a receptacle in the boundary wall exposing a portion of the busbar, the exposed portion of the busbar having an opening, and a first rotating bar projecting from a first side wall of the receptacle to the exposed portion of the busbar without obstructing the opening; attaching a metal base plate to a first mounting side of the power semiconductor module; and attaching a printed circuit board with a current sensor module to a second mounting side of the power semiconductor module opposite the first mounting side.wherein the fastening of the printed circuit board comprises inserting the current sensor module into the receptacle in the boundary wall of the power semiconductor module, such that part of the current sensor module extends through the opening in the busbar, wherein the current sensor module can rotate freely about an axis of rotation formed by the first rotating bar during insertion.

[0008] The expert will recognize additional features and advantages upon reading the following detailed description and reviewing the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The elements in the drawings are not necessarily to scale with respect to one another. Identical reference numerals denote corresponding identical parts. The features of the various embodiments shown can be combined unless they are mutually exclusive. The drawings depict embodiments that are described in detail in the following description. Fig. Figure 1 shows a perspective side view of an embodiment of a power semiconductor module with a torsion bar feature. Fig. Figure 2 shows a top view of the power semiconductor module. Fig. Figure 3 shows a partial top view of the power semiconductor module in the area of ​​a current sensor module mounting according to a different torsion bar design. Fig. Figure 4 shows a partial top view of the power semiconductor module in the area of ​​a current sensor module mount according to a different torsion bar design. Fig. Figure 5 shows a partial cross-sectional view of an embodiment of a power electronics arrangement which includes a power semiconductor module with a torsion bar feature. Fig. 6 and Fig. Figure 7 represents the insertion of a current sensor module into a corresponding recess formed in a boundary wall of a power semiconductor module, wherein the current sensor module is inserted at different angles. Fig. Figure 8 shows a cross-sectional view of a current sensor module that is arranged in a recess in a boundary wall of the power semiconductor module outside an area of ​​a phase busbar with an opening for receiving a sensor part of the current sensor module. Fig. Figure 9 shows a partial cross-sectional view of an embodiment of a power semiconductor module with a twist bar feature and in which one phase bus of the module has two thicknesses. DETAILED DESCRIPTION

[0010] The embodiments described here represent a power semiconductor module that can accommodate a single type of current sensor module, independent of the busbar thickness. The electrically insulating frame of the power semiconductor module has a receptacle that exposes a portion of the power semiconductor module's busbar. The receptacle is configured to accommodate a current sensor module. The torsion bar projects from a side wall of the receptacle and onto the exposed portion of the busbar. The torsion bar forms an axis of rotation with the receptacle, allowing the current sensor module to rotate freely about this axis during insertion into the receptacle. The torsion bar can be formed integrally as part of the power semiconductor module's electrically insulating frame, and its thickness can be selected based on the busbar thickness.Accordingly, power semiconductor modules with different current ratings and therefore busbars with different thicknesses can use the same current sensor module type, in which the torsion bar thickness is adjusted during the module manufacturing process.

[0011] Next, with reference to the figures, exemplary embodiments of the power semiconductor module, the power electronics arrangement produced from the power semiconductor module and the corresponding manufacturing process are described.

[0012] Fig. Figure 1 shows a perspective side view of an embodiment of a power semiconductor module. Fig. Figure 2 shows a top view of the power semiconductor module. The power semiconductor module can be designed, for example, for use as a DC-AC inverter, a DC-DC converter, an AC-DC converter, a DC-AC converter, an AC-AC converter, or the same.

[0013] The power semiconductor module has an electrically insulating frame 100. The electrically insulating frame 100 has a first (base plate) mounting side 102, a second (printed circuit board) mounting side 104 opposite the base plate mounting side 102, and a boundary wall 106 that defines the perimeter of the electrically insulating frame 100. Busbars 108, 110, 112 extend from an interior 114 of the electrically insulating frame 100 through the boundary wall 106 of the electrically insulating frame 100.

[0014] Electrically insulating protrusions 116 can be formed as an integral part of the electrically insulating frame 100 and project from the mounting side 104 of the electrically insulating frame 100 opposite the base plate mounting side 102. That is, the electrically insulating protrusions 116 extend from or project from the printed circuit board mounting side 104 of the electrically insulating frame 100. The electrically insulating protrusions 116 are configured to facilitate the attachment of the printed circuit board, such as a PCB, to the power semiconductor module at the printed circuit board mounting side 104 of the electrically insulating frame 100.The terms 'printed circuit board' and 'PCB' are used interchangeably here when referring to a circuit board that mechanically supports electronic components and electrically connects them using conductive traces, pads and other features etched from one or more planar layers of copper laminated onto and / or between planar layers of a non-conductive substrate.

[0015] In one embodiment, the electrically insulating frame 100 of the power semiconductor module comprises plastic, and the electrically insulating protrusions 116 are projections of the plastic that extend from the printed circuit board mounting side 104 of the electrically insulating frame 100. The plastic can be, for example, a molding compound, and the electrically insulating frame 100 can be formed by injection molding, compression molding, compression molding, film-assisted injection molding, laminating, etc. The molding compound can comprise a variety of electrically insulating encapsulation materials, including ceramics, epoxy materials, and thermosets, to name just a few. Other types of plastic can be used for the electrically insulating frame 100 of the power semiconductor module.

[0016] At least one substrate 118 is arranged inside 114 of the electrically insulating frame 100. According to this embodiment, a metal base plate 120 is attached to the mounting side 102 of the electrically insulating frame 100 opposite the printed circuit board mounting side 104. In other embodiments, the power semiconductor module can be provided without a pre-attached metal base plate 120.

[0017] In both cases, each substrate 118 arranged inside the electrically insulating frame 100 of the power semiconductor module has several power semiconductor dies 122 attached to the substrate 118. Depending on the application for which the power semiconductor module is designed, additional power semiconductor dies 122 may be attached to one or more additional substrates 118. For example, in the case of a three-phase inverter or converter, the power semiconductor module may include three substrates 118, each having several power semiconductor dies 122 electrically connected to implement one phase of the inverter / converter. The power semiconductor module may again support more or fewer phases.

[0018] Each substrate 118 arranged inside the electrically insulating frame 100 of the power semiconductor module can be a DCB substrate (direct copper bonded), an AMB substrate (active metal brazed), an IMS substrate (insulated metal substrate), etc. In each case, the substrate 118 can have a structured metallized surface 124 that provides some of the electrical connections between the semiconductor dies 122 of the same group. Each group of semiconductor dies 122 can be electrically connected to each other, for example, via bond wires 126 and the structured metallized surface 124 of the corresponding substrate 118 to form a half-bridge.

[0019] In the Fig. 1 and Fig. In the example shown, the power semiconductor module is designed for use as a three-phase inverter, and three half-bridges are realized by the respective groups of semiconductor dies 122. More than one semiconductor die 122 from the same group can be coupled in parallel to provide a higher current carrying capacity. Each half-bridge has a phase output that is electrically coupled to a corresponding phase bus 108. Each phase bus 108 extends from the corresponding substrate 118 through a side face 100a of the electrically insulating frame 100 in which each substrate 118 is arranged. The respective supply (voltage) and ground bus bars 110, 112 extend through another side face 100b of the electrically insulating frame 100 and provide voltage and ground, respectively, to the corresponding groups of semiconductor dies 122.

[0020] The type and number of semiconductor dies 122 attached to each substrate 118 can depend on the application for which the power semiconductor module is designed. For example, the semiconductor dies 122 can be power MOSFET dies (MOSFET, metal-oxide-semiconductor field-effect transistor), HEMT dies (HEMT, high-electron mobility transistor), IGBT dies (IGBT, insulated gate bipolar transistor), power diode dies, etc.

[0021] In each case, respective signal pins 128 are attached to each substrate 118 and are electrically connected, for example, via the structured metallized surface 124 of the corresponding substrate 118 and one or more bond wires 126 to the corresponding group of power semiconductor dies 122. The signal pins 128 provide control signaling, such as gate signals, for the respective groups of power semiconductor dies 122 and can provide other functionality, such as telemetry transmission, fault signaling, etc. According to the Fig. 1 and Fig. In the embodiment shown in Figure 2, the signal pins 128 of the power semiconductor module extend vertically away from the respective substrates 118.

[0022] A receptacle 130 is formed in the boundary wall of the electrically insulating frame 100 for each phase bus 108 contained in the power semiconductor module. Each receptacle 130 is configured to hold a current sensor module (in the Fig. 1 and Fig. (2 not shown) and exposes a portion of the corresponding phase busbar 108 where the busbar 108 extends through the receptacle 130. The exposed portion of each phase busbar 108 has an opening 132 for receiving a portion of the corresponding current sensor module.

[0023] A first torsion bar 134 projects from a first side wall 136 of each receptacle 130 and to the exposed part of the corresponding phase busbar 108, without blocking the opening 132 of each phase busbar 108. Each first torsion bar 134 forms an axis of rotation in the corresponding receptacle 130, e.g., along the y-direction in Fig. 2. The torsion bar 134 can take the form of, for example, part of a sphere (e.g., a hemisphere), part of a cylinder (e.g., a half-cylinder), or any other type of projection with a rounded or angled surface that allows a current sensor module to tilt with respect to the busbar 108.

[0024] According to the Fig. 1 and Fig. In the embodiment shown in section 2, a second torsion bar 138 projects from a second side wall 140 of each receptacle 130 opposite the first side wall 136 and towards the exposed part of the corresponding phase busbar 108, without blocking the opening 132 of each phase busbar 108. The first torsion bar 134 and the second torsion bar 138 in each receptacle 130 are, for example, aligned along the y-direction in Fig. 2, aligned with each other.

[0025] A gap 142 exists between the first torsion bar 134 and the second torsion bar 138 in each receptacle 130, and the second torsion bar 138 forms part of the same axis of rotation as the first torsion bar 134 in the same receptacle 130. The gap 142 between the first torsion bar 134 and the second torsion bar 138 in each receptacle 130 can, for example, be in a range of 1 mm to 4 mm. The size of each gap 142 can be expressed as the distance between the first side wall 136 and the second side wall 140 of the receptacles 130. For example, the gap 142 between the first torsion bar 134 and the second torsion bar 138 in each receptacle 130 can be in a range of 13% to 52% of the distance between the first side wall 136 and the second side wall 140 of the receptacle 130.

[0026] As previously explained, the electrically insulating frame 100 of the power semiconductor module can be made of plastic, e.g., by injection molding, compression molding, compression molding, film-assisted injection molding, laminating, etc. The torsion bars 134, 138 can be formed by a suitably shaped mold used during the plastic molding process. In a molded electrically insulating frame 100 comprising plastic, a first torsion bar 134 is a projection of the plastic extending from the first side wall 136 of the corresponding receptacle 130, and the second torsion bar 138 (if used) is a projection of the plastic extending from the second side wall 140 of the receptacle 130.

[0027] The Fig. 3 and Fig. Figure 4 represents partial top views of the power semiconductor module in the area of ​​a recording 130 according to further torsion bar design forms.

[0028] In Fig. 3 The first torsion bar 134 has a proximal end 144 adjacent to the side wall 136 of the receptacle 130 and a distal end 146 facing the second torsion bar 138. Likewise, the second torsion bar 138 has a proximal end 148 adjacent to the second side wall 140 of the receptacle 130 and a distal end 150 facing the first torsion bar 134. According to the in Fig. In the embodiment shown in Figure 3, the proximal end 144 of the first torsion bar 134 is wider in the x-direction than the distal end 146 of the first torsion bar 134, and the proximal end 148 of the second torsion bar 138 is wider in the x-direction than the distal end 150 of the second torsion bar 138.

[0029] In Fig. 4 The first torsion bar 134 extends to the second side wall 140 of the receptacle 130 opposite the first side wall 136. According to the in Fig. In the embodiment shown in section 4, the first torsion bar 134 extends continuously between the first side wall 136 and the second side wall 140 of the receptacle 130.

[0030] Fig. Figure 5 shows a partial cross-sectional view of an embodiment of a power electronics arrangement comprising a power semiconductor module with one or more of the torsion bar features described herein. Accordingly, each receptacle 130 formed in the boundary wall 106 of the electrically insulating frame 100 of the power semiconductor module includes at least the first torsion bar 134, which projects from the first side wall 136 of the receptacle 130 and to the exposed portion of the corresponding phase bus 108 without obstructing the opening 132 in the bus 108. As described above, the power electronics arrangement can be a DC-AC inverter, a DC-DC converter, an AC-DC converter, a DC-AC converter, an AC-AC converter, or the like.

[0031] A metal base plate 120 is attached to the first mounting side 102 of the power semiconductor module, and a printed circuit board 200 is attached to the second mounting side 104 of the power semiconductor module opposite the first mounting side 102. The metal base plate 120 can be a solid block of metal, coated, water-cooled, etc. Fasteners 202, such as screws, can be used to attach the metal base plate 120 to the power semiconductor module.

[0032] The printed circuit board 200 is attached to the opposite mounting side 102 of the power semiconductor module with respect to the metal base plate 120. The printed circuit board 200 can be, for example, a single-layer or multi-layer printed circuit board. Components such as semiconductor dies, resistors, capacitors, etc., can be attached to one or both main sides of the printed circuit board 200. For example, a control circuit arrangement such as a microcontroller, etc., can be attached to the printed circuit board 200 to control the switching state of the power semiconductor dies 122 contained in the power semiconductor module.

[0033] A current sensor module 204 is arranged in each receptacle 130 formed in the boundary wall 106 of the power semiconductor module. A portion 206 of the current sensor module 204 extends through the opening 132 in the corresponding phase bus 108. At least the first rotating bar 134 forms an axis of rotation for the current sensor module 204. A second rotating bar 138 can form part of the axis of rotation in each receptacle 130, as previously explained. In each case, the axis of rotation allows the current sensor module 204 to pivot in at least one direction during the assembly process, thereby accommodating alignment tolerances associated with the current sensor module 204 and the printed circuit board 200.

[0034] Each current sensor module 204 includes a current sensor 208, such as a differential Hall sensor, mounted on a printed circuit board 210. Each current sensor module 204 can detect a relatively high current, e.g., 500 A or more, and can include two (2) Hall sensors 212a, 212b for measuring the magnetic field surrounding the corresponding phase bus 108 via differential Hall detection. Terminal pins (terminals) 214 extend from the printed circuit board 210 to provide a point for an external electrical connection for the current sensor 208. In one embodiment, the current sensor 208 has an unpackaged semiconductor die (chip) enclosed in a molding compound 216, wherein the die can include a differential sensor circuit, such as a differential Hall sensor circuit. The current sensor 208 can be a surface-mount device (SMD) without undergoing an overmolding process.The current sensor 208 can use a coreless principle of magnetic current sensing.

[0035] The metal base plate 120, attached to the first mounting side 102 of the power semiconductor module, can have an opening 218 that is vertically aligned with each current sensor receptacle 130 formed in the boundary wall 106 of the power module frame 100. The metal base plate 120 can be grounded and comprise a metal or a metal alloy. A metallic material can distort the magnetic fields detected by the current sensors 208. By forming the openings 218 in the metal base plate 120 that are vertically aligned with the current sensor receptacles 130, less metal material is available to distort the magnetic fields. The openings 218 in the metal base plate 120 that are vertically aligned with the current sensor receptacles 130 can have any shape, such as round holes, rectangular cutouts, etc., but are not limited to these.Each receptacle 130 of the boundary wall 106 of the power module frame 100, which is configured to accommodate a current sensor module 204, can have a solid base 220 formed by part of the electrically insulating frame 100 and exposed through the corresponding opening 218 in the metal base plate 120.

[0036] Regardless of the type of current sensor module 204 used, the thickness 'T_bar' of the first torsion bar 134 (and of the second torsion bar 138, if used) in the mounting direction (z-direction in Fig. 5) be selected to ensure proper positioning of the current sensor 208 contained in each current sensor module 204. Otherwise, stray fields may impair the performance of the current sensors 208, which can be particularly problematic if the current sensor 208 uses a coreless principle of magnetic current sensing.

[0037] In the case of differential Hall detection, the current sensor module 204 can contact the corresponding first rotating bar 134 (and the second rotating bar 138, if used), and the thickness T_bar of the first rotating bar 134 (and of the second rotating bar 138, if used) can be proportional to the thickness 'T_bus' of the corresponding phase bus 108, so that the first Hall sensor 212a is positioned above the phase bus 108 and the second Hall sensor 212b is positioned below the phase bus 108, as shown in Fig. 5 is shown by the horizontal dashed lines. For example, the first torsion bar 134 (and the second torsion bar 138, if used) can be designed to be thinner for thicker busbars 108 (e.g. a 1.5 mm thick busbar) and thicker for thinner busbars 108 (e.g. a 1 mm thick busbar).

[0038] If a forming process is used to form the electrically insulating frame 100 of the power semiconductor module, a forming tool can be designed to provide a suitable thickness for the first torsion bar 134 (and the second torsion bar 138, if used) with respect to the thickness of the corresponding phase busbar 108. In this way, power semiconductor modules with different busbar thicknesses can be manufactured without requiring a different current sensor module design for each busbar thickness. Furthermore, the same tooling can be used to manufacture power electronic assemblies from the power semiconductor modules with different busbar thicknesses. In one embodiment, the thickness T_bar of the first torsion bar 134 (and second torsion bar 138, if used) is in a range of 0.7 mm to 4 mm. Such a thickness range allows for the use of thicker (e.g.,to take into account the 1.5 mm thick) phase busbars 108 for applications for higher currents and thinner (e.g. 1 mm thick) phase busbars 108 for applications for lower currents.

[0039] During the assembly process, a pressing tool (not shown) applies a pressing force to the circuit board 200. The pressing force is in Fig. 5 shown by the downward-pointing dashed arrows. For press-fit pins such as the signal pins 128 of the power semiconductor module and the pins 214 of the current sensor modules 204, the pressing force exerted by the pressing tool ensures a press connection between the printed circuit board 200 and the power semiconductor module. A counterforce is applied by each first rotating bar 134 (and second rotating bar 138, if used) and by a fixed stop 222 of the electrically insulating projections 116 of the power semiconductor module. The counterforce is in Fig. 5 shown by the upward-pointing dashed arrows. The design of the sensor body 216 can ensure a certain remaining air gap 224 between the printed circuit board 200 and the first mounting side 102 of the power semiconductor module after the press-fitting process. Otherwise, tolerances could lead to deformation of the printed circuit board 200 in the pressing direction (z-direction in Fig. 5) which can lead to circuit board stretching and cracking in the stretch-sensitive components, such as multilayer ceramic capacitors attached to the circuit board 200.

[0040] The Fig. 6 and Fig. Figure 7 illustrates the insertion of a current sensor module 204 into the corresponding recess 130 formed in the boundary wall 106 of the power semiconductor module. When the current sensor module 204 is inserted into the corresponding recess 130 of the power semiconductor module, the part 206 of the current sensor module 204 with the current sensor 208 extends through the opening 132 in the phase bus 108 to ensure proper positioning of the current sensor 208 with respect to the phase bus 108. In the case of differential Hall sensing, a first Hall sensor 212a of the current sensor 208 is positioned above the phase bus 108, and a second Hall sensor 212b of the current sensor 208 is positioned below the phase bus 108.

[0041] In Fig. 6. The current sensor module 204 is inclined at a first angle α1 with respect to the main horizontal plane of the printed circuit board 200, as shown by the dashed lines. The offset may be due to assembly tolerances during the fastening of the current sensor module 204 to the printed circuit board 200. When the current sensor module 204 contacts the first rotating bar 134 (and the second rotating bar 138, if used) in the corresponding receptacle 130 of the power semiconductor module, the current sensor module 204 can rotate freely about the axis of rotation formed by the first rotating bar 134 (and the second rotating bar 138, if used) during insertion.

[0042] In Fig. 7 The current sensor module 204 is inclined at a second angle α2 with respect to the main horizontal plane of the circuit board 200, as shown by the dashed lines. The inclination angle of the current sensor module 204 is in the opposite direction to that shown in Fig. 6. In both cases, however, the current sensor module 204 can rotate freely about the axis of rotation formed by the first torsion bar 134 (and the second torsion bar 138, if used) during insertion. Accordingly, assembly tolerances between the current sensor module 204 and the circuit board 200 can be at least partially compensated for by the torsion bar feature described here.

[0043] Fig. Figure 8 shows a cross-sectional view of a current sensor module 204, which is arranged in a receptacle 130 in the boundary wall 106 of the power semiconductor module outside the area of ​​the phase bus 108, with an opening 132 for receiving the sensor part 206 of the current sensor module 204. According to this embodiment, the current sensor module 204 has a spacer 300 that contacts the exposed part of the phase bus 108. The spacer 300 is thicker (T_stand > T_bar) than the first torsion bar 134 (and the second torsion bar 138, if used), so that the current sensor module 204 does not contact the first torsion bar 134 (or second torsion bar 138, if used). As explained previously, the current sensor module 204 may not be ideally positioned during the assembly process. The spacer 300 limits the maximum vertical offset (z-direction in the Fig. 8).

[0044] Fig. Figure 9 shows a partial cross-sectional view of an embodiment of the power semiconductor module in which the depicted busbar 108 has two thicknesses. That is, the busbar 108 has two (2) different thicknesses. The busbar 108 has a first thickness 'T1' from the corresponding substrate 118 to the receptacle 130 and a second thickness 'T2' from the receptacle 130 to behind the boundary wall 106 of the power module frame 100. The second thickness T2 is greater than the first thickness T1. For example, T1 = 1 mm and T2 = 1.5 mm. The thinner part 108a of the busbar 108 ensures lower mechanical stress, e.g. B. during ultrasonic welding to the substrate 118, and better decoupling of the thermo-mechanical forces to a ceramic material of the substrate 118. The thicker part 108a of the phase busbar 108 ensures lower resistance and thus less heating.

[0045] The horizontally dashed line 400 in Fig. Figure 9 shows the axis of rotation provided by the first rotating bar 134 (and the second rotating bar 138, if used), which serves as a spacer for the current sensor module 204 when the current sensor module 204 contacts the first rotating bar 134 (and the second rotating bar 138, if used) during the power electronics assembly process. The horizontal dashed line 402 in Fig. Figure 9 shows an external mounting / fastening surface of the phase busbar 108 outside the module frame 100. The horizontal dashed line 404 in Fig. Figure 9 shows the horizontal centerline of the phase bus 108, which is a key reference point for differential Hall current sensing. When the current sensor module 204 uses differential Hall current sensing, the differential Hall sensors 212a and 212b should be positioned above and below the phase bus 108, respectively, to ensure minimal stray field interference. As previously described with reference to Fig. As explained in section 5, the thickness T_bar of the first torsion bar 134 (and second torsion bar 138, if used) can be selected to ensure proper positioning of the differential Hall sensors 212a, 212b.

[0046] Although the present revelation is not limited to this, the following numbered examples illustrate one or more aspects of the revelation.

[0047] Example 1. A power semiconductor module comprising: an electrically insulating frame with a first mounting side, a second mounting side opposite the first mounting side, and a boundary wall defining a perimeter of the electrically insulating frame; a first substrate arranged within the electrically insulating frame; a plurality of power semiconductor dies attached to the first substrate; a plurality of signal pins attached to the first substrate and electrically connected to the power semiconductor dies; a busbar attached to the first substrate and extending through the boundary wall; a recess in the boundary wall configured to accommodate a current sensor module and exposing a portion of the busbar, the exposed portion of the busbar having an opening;and a first torsion bar extending from a first side wall of the receptacle and towards the exposed part of the conductor rail without blocking the opening in the conductor rail, the first torsion bar forming an axis of rotation in the receptacle.

[0048] Example 2. The power semiconductor module of Example 1, wherein the first torsion bar extends to a second side wall of the receptacle opposite the first side wall, such that the first torsion bar is continuous between the first side wall and the second side wall.

[0049] Example 3. The power semiconductor module of Example 1, further comprising: a second torsion bar extending from a second side wall of the receptacle opposite the first side wall and to the exposed part of the busbar without blocking the opening in the busbar, wherein the first torsion bar and the second torsion bar are aligned with each other, wherein there is a gap between the first torsion bar and the second torsion bar, and wherein the second torsion bar forms part of the same axis of rotation as the first torsion bar.

[0050] Example 4. The power semiconductor module of Example 3, wherein the first torsion bar has a proximal end adjacent to the first side wall and a distal end facing the second torsion bar, wherein the second torsion bar has a proximal end adjacent to the second side wall and a distal end facing the first torsion bar, wherein the proximal end of the first torsion bar is wider than the distal end of the first torsion bar, and wherein the proximal end of the second torsion bar is wider than the distal end of the second torsion bar.

[0051] Example 5. The power semiconductor module from Example 3 or 4, where the gap is in a range of 1 mm to 4 mm.

[0052] Example 6. The power semiconductor module of one of Examples 3 to 5, wherein the gap is in a range of 13% to 52% of the distance between the first side wall and the second side wall.

[0053] Example 7. The power semiconductor module of one of Examples 1 to 6, wherein the first twisted bar has a thickness in a range of 0.7 mm to 4 mm.

[0054] Example 8. The power semiconductor module of one of Examples 1 to 7, wherein the electrically insulating frame comprises plastic, and wherein the first torsion bar is a projection of the plastic extending from the first side wall of the receptacle.

[0055] Example 9. The power semiconductor module of any one of Examples 1 to 8, further comprising: a metal base plate attached to the first mounting side of the electrically insulating frame, the metal base plate having an opening directed towards reception in the boundary wall.

[0056] Example 10. The power semiconductor module of Example 9, wherein the mount has a solid base exposed through the opening in the metal base plate.

[0057] Example 11. The power semiconductor module of one of Examples 1 to 10, wherein the busbar has a first thickness from the first substrate to the receptacle and a second thickness from the receptacle to behind the boundary wall, and wherein the second thickness is greater than the first thickness.

[0058] Example 12. A power electronics arrangement comprising: a power semiconductor module comprising an electrically insulating frame with a boundary wall defining a perimeter of the electrically insulating frame, a busbar extending through the boundary wall, a receptacle in the boundary wall exposing a portion of the busbar, the exposed portion of the busbar having an opening, and a first rotating bar extending from a first side wall of the receptacle to the exposed portion of the busbar without obstructing the opening; a metal base plate attached to a first mounting side of the power semiconductor module; a printed circuit board attached to a second mounting side of the power semiconductor module opposite the first mounting side;and a current sensor module arranged in the receptacle in the boundary wall of the power semiconductor module, wherein a part of the current sensor module extends through the opening in the busbar, the first rotating bar forming an axis of rotation for the current sensor module.

[0059] Example 13. The power electronics arrangement of Example 12, wherein the first torsion bar extends to a second side wall of the receptacle opposite the first side wall, such that the first torsion bar is continuous between the first side wall and the second side wall.

[0060] Example 14. The power electronics arrangement of Example 12, further comprising: a second torsion bar extending from a second side wall of the receptacle opposite the first side wall and to the exposed part of the busbar without blocking the opening in the busbar, wherein the first torsion bar and the second torsion bar are aligned with each other, wherein there is a gap between the first torsion bar and the second torsion bar, and wherein the second torsion bar forms part of the same axis of rotation as the first torsion bar.

[0061] Example 15. The power electronics arrangement of Example 14, wherein the first torsion bar has a proximal end adjacent to the first side wall and a distal end facing the second torsion bar, wherein the second torsion bar has a proximal end adjacent to the second side wall and a distal end facing the first torsion bar, wherein the proximal end of the first torsion bar is wider than the distal end of the first torsion bar, and wherein the proximal end of the second torsion bar is wider than the distal end of the second torsion bar.

[0062] Example 16. The power electronics arrangement of one of Examples 12 to 15, wherein the current sensor module has a spacer that touches the exposed part of the busbar, and wherein the spacer is thicker than the first torsion bar such that the current sensor module does not touch the first torsion bar.

[0063] Example 17. The power electronics arrangement of one of Examples 12 to 16, wherein the metal base plate has an opening that is aligned with the receiving in the boundary wall.

[0064] Example 18. The power electronics arrangement of Example 17, wherein the receptacle has a solid base exposed through the opening in the metal base plate.

[0065] Example 19. The power electronics arrangement of one of Examples 12 to 18, wherein the current sensor module contacts the first rotating bar.

[0066] Example 20. The power electronics arrangement of Example 19, wherein the current sensor module is a differential current sensor module comprising a first Hall sensor and a second Hall sensor, and wherein a thickness of the first torsion bar is proportional to a thickness of the busbar such that the first Hall sensor is positioned above the busbar and the second Hall sensor is positioned below the busbar.

[0067] Example 21. Method for manufacturing a power electronics arrangement, the method comprising: providing a power semiconductor module comprising an electrically insulating frame with a boundary wall defining a perimeter of the electrically insulating frame, a busbar extending through the boundary wall, a receptacle in the boundary wall exposing a portion of the busbar, the exposed portion of the busbar having an opening, and a first rotating bar extending from a first side wall of the receptacle to the exposed portion of the busbar without obstructing the opening; attaching a metal base plate to a first mounting side of the power semiconductor module; and attaching a printed circuit board with a current sensor module to a second mounting side of the power semiconductor module opposite the first mounting side;wherein the fastening of the printed circuit board comprises inserting the current sensor module into the receptacle in the boundary wall of the power semiconductor module, such that part of the current sensor module extends through the opening in the busbar, wherein the current sensor module can rotate freely about an axis of rotation formed by the first rotating bar during insertion.

[0068] Terms such as "first," "second," and the like are used to describe different elements, areas, sections, etc., and are not intended to be restrictive. The same terms refer to the same elements throughout the entire description.

[0069] As used here, the terms "exhibit," "contain," "include," "comprise," and the like are open terms that indicate the presence of the specified elements or features but do not exclude any additional elements or features. The articles "a / an" and "the" are intended to include both the plural and the singular unless the context clearly indicates otherwise.

[0070] It is understood that the features of the various embodiments described here can be combined with one another, unless specifically stated otherwise.

[0071] Although certain embodiments have been presented and described herein, it will be understood by the person skilled in the art that the specific embodiments shown and described can be replaced by a wide variety of alternative and / or equivalent implementations without altering the scope of protection of the present invention. This application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, the present invention is to be limited only by the claims and their equivalents.

Claims

[1] Power semiconductor module, comprising: an electrically insulating frame (100) having a first mounting side (102), a second mounting side (104) opposite the first mounting side (102), and a boundary wall (106) defining a perimeter of the electrically insulating frame; a first substrate (118) disposed in the electrically insulating frame (100); a plurality of power semiconductor dies (122) attached to the first substrate (118); a plurality of signal pins (128) attached to the first substrate (118) and electrically connected to the power semiconductor dies (122); a bus bar (108) attached to the first substrate (100) and extending through the boundary wall (106); a receptacle (130) in the boundary wall (106) configured to receive a current sensor module (216) and exposing a portion of the bus bar (108), the exposed portion of the bus bar (108) having an opening (132); and a first torsion bar (134) extending from a first side wall (136) of the receptacle (130) and toward the exposed portion of the busbar (108) without blocking the opening (132) in the busbar (108), wherein the first torsion bar (134) forms an axis of rotation in the receptacle (130). [2] The power semiconductor module according to claim 1, wherein the first torsion bar (134) extends to a second side wall (140) of the receptacle (130) opposite the first side wall (136) such that the first torsion bar (134) is continuous between the first side wall (136) and the second side wall (140). [3] The power semiconductor module according to claim 1, further comprising: a second torsion bar (138) projecting from a second side wall (140) of the receptacle (130) opposite the first side wall (136) and toward the exposed portion of the busbar (108) without blocking the opening (132) in the busbar (108), wherein the first torsion bar (134) and the second torsion bar (138) are aligned with each other, wherein there is a gap (142) between the first torsion bar (134) and the second torsion bar (138), wherein the second torsion bar (138) forms part of the same axis of rotation as the first torsion bar (134). [4] The power semiconductor module according to claim 3, wherein the first torsion bar (134) has a proximal end (144) adjacent to the first side wall (136) and a distal end (146) facing the second torsion bar (138), the second torsion bar (138) has a proximal end (148) adjacent to the second side wall (140) and a distal end (150) facing the first torsion bar (134), the proximal end (144) of the first torsion bar (134) being wider than the distal end (150) of the first torsion bar (134), and the proximal end (148) of the second torsion bar (138) being wider than the distal end (150) of the second torsion bar (138). [5] Power semiconductor module according to claims 3 or 4, wherein the gap (142) is in a range of 1 mm to 4 mm and / or wherein the gap (142) is in a range of 13% to 52% of the distance between the first side wall (136) and the second side wall (140). [6] Power semiconductor module according to one of the preceding claims, wherein the first torsion bar (134) has a thickness in a range of 0.7 mm to 4 mm. [7] Power semiconductor module according to one of the preceding claims, wherein the electrically insulating frame (100) comprises plastic, and wherein the first torsion bar (134) is a projection of the plastic that protrudes from the first side wall (136) of the receptacle (130). [8] A power semiconductor module according to any one of the preceding claims, further comprising: a metal base plate (120) attached to the first mounting side (102) of the electrically insulating frame (100), the metal base plate having an opening (218) aligned with the receptacle (130) in the boundary wall (106). [9] Power semiconductor module according to claim 8, wherein the receptacle (130) has a solid bottom (220) exposed through the opening (218) in the metal base plate (120). [10] Power semiconductor module according to one of the preceding claims, wherein the busbar (108) has a first thickness (T1) from the first substrate (118) to the receptacle (130) and a second thickness (T2) from the receptacle (130) to behind the boundary wall (106), and wherein the second thickness (T2) is greater than the first thickness (T1). [11] Power electronics arrangement, comprising: a power semiconductor module comprising an electrically insulating frame (100) having a boundary wall (106) defining a perimeter of the electrically insulating frame (100), a bus bar (108) extending through the boundary wall (106), a receptacle in the boundary wall (106) exposing a portion of the bus bar (108), the exposed portion of the bus bar (108) having an opening (132), and a first torsion bar (134) extending from a first side wall (136) of the receptacle (130) and toward the exposed portion of the bus bar (108) without blocking the opening (132); a metal base plate (120) attached to a first mounting side (102) of the power semiconductor module; a printed circuit board (200) attached to a second mounting side (104) of the power semiconductor module opposite the first mounting side (102); and a current sensor module (204) arranged in the receptacle (130) in the boundary wall (106) of the power semiconductor module, wherein a portion of the current sensor module (204) extends through the opening (132) in the busbar (108), wherein the first torsion bar (134) forms a rotation axis for the current sensor module (204). [12] The power electronics assembly of claim 11, wherein the first torsion bar (134) extends to a second side wall (140) of the receptacle (130) opposite the first side wall (136) such that the first torsion bar (134) is continuous between the first side wall (136) and the second side wall (140). [13] Power electronics arrangement according to claim 11, further comprising: a second torsion bar (138) projecting from a second side wall (140) of the receptacle (130) opposite the first side wall (136) and toward the exposed portion of the busbar (108) without blocking the opening (132) in the busbar (108), wherein the first torsion bar (134) and the second torsion bar (138) are aligned with each other, wherein a gap (142) is present between the first torsion bar (134) and the second torsion bar (138), the second torsion bar (138) forming part of the same axis of rotation as the first torsion bar (134). [14] The power electronics assembly of claim 13, wherein the first torsion bar (134) has a proximal end (144) adjacent to the first side wall (136) and a distal end (146) facing the second torsion bar (138), the second torsion bar (138) has a proximal end (148) adjacent to the second side wall (140) and a distal end (150) facing the first torsion bar (134), the proximal end (144) of the first torsion bar (134) being wider than the distal end (146) of the first torsion bar (134), and the proximal end (148) of the second torsion bar (138) being wider than the distal end (150) of the second torsion bar (138). [15] The power electronics assembly of any one of claims 11 to 14, wherein the current sensor module (216) includes a spacer (300) contacting the exposed portion of the bus bar (108), and wherein the spacer (300) is thicker than the first torsion bar (134) such that the current sensor module (216) does not contact the first torsion bar (134). [16] Power electronics assembly according to one of claims 11 to 15, wherein the metal base plate (120) has an opening (132) aligned with the receptacle (130) in the boundary wall (106). [17] Power electronics assembly according to claim 16, wherein the receptacle (130) has a solid bottom (220) exposed through the opening (132) in the metal base plate (120) [18] Power electronics arrangement according to one of claims 11 to 17, wherein the current sensor module (216) contacts the first torsion bar (134). [19] The power electronics assembly of claim 18, wherein the current sensor module (216) is a differential current sensor module comprising a first Hall sensor (212a) and a second Hall sensor (212b), and wherein a thickness of the first torsion bar (134) is proportional to a thickness of the busbar (108) such that the first Hall sensor (212a) is positioned above the busbar (108) and the second Hall sensor (212b) is positioned below the busbar (108). [20] A method of manufacturing a power electronics device, the method comprising: Providing a power semiconductor module comprising an electrically insulating frame (100) having a boundary wall (106) defining a perimeter of the electrically insulating frame, a bus bar (108) extending through the boundary wall (106), a receptacle (130) of the boundary wall (106) exposing a portion of the bus bar (108), the exposed portion of the bus bar (108) having an opening (132), and a first torsion bar (134) projecting from a first side wall (136) of the receptacle (130) toward the exposed portion of the bus bar (108) without blocking the opening (132); Attaching a metal base plate (120) to a first mounting side (102) of the power semiconductor module; and Attaching a circuit board (210) with a current sensor module (216) to a second mounting side (104) of the power semiconductor module opposite the first mounting side (102); wherein the fastening of the circuit board (210) comprises inserting the current sensor module (216) into the receptacle (130) in the boundary wall (106) of the power semiconductor module, such that that a part of the current sensor module (216) extends through the opening (132) in the busbar (108), wherein the current sensor module (216) can rotate freely about a rotation axis formed by the first torsion bar (134) during insertion.

Images