Method for operating a particle beam device, method for determining a processing point, computer program product and particle beam device for carrying out at least one of the methods

Abstract

The invention relates to a method for operating a particle beam device (202). Furthermore, the invention relates to a further method for determining a processing point using a particle beam device, a computer program product, and a particle beam device (202) for carrying out at least one of the methods. The method comprises the following method steps: guiding a first particle beam to the position of an object (125) using a guide unit (100, 104, 105, 106, 107, 108, 109, 115, 122, 300, 301, 302, 303, 304, 306, 307, 308), detecting interacting particles and / or interacting radiation with a detector (116, 117, 119, 121, 500), generating a detection signal, determining a thickness of the object (125) based on the generated detection signal, determining a deviation of the determined thickness from a predeterminable thickness value,Adjusting and / or determining a control parameter value of a control parameter for controlling a functional unit (100, 101, 102, 103, 104, 105, 106, 107, 108, 109, 115, 122, 300, 301, 302, 303, 304, 306, 307, 308), controlling said functional unit with the adjusted and / or determined control parameter value, guiding the second particle beam using the guiding unit (100, 104, 105, 106, 107, 108, 109, 115, 122, 300, 301, 302, 303, 304, 306, 307, 308) and processing the object (125) with the second particle beam.,

Description

The invention relates to a method for operating a particle beam device. The invention further relates to a method for determining a processing point using a particle beam device. The invention further relates to a computer program product and a particle beam device for carrying out at least one of the methods according to the invention. For example, the particle beam device is designed as an electron beam device and / or as an ion beam device.Electron beam apparatuses, in particular a scanning electron microscope (also referred to as SEM below) and / or a transmission electron microscope (also referred to as TEM below), are used for examining objects (samples) in order to obtain knowledge regarding the properties and the behavior under certain conditions.In an SEM, an electron beam (also referred to as a primary electron beam below) is generated by means of a beam generator and focused by a beam guidance system onto an object to be examined. By means of a deflection device, the primary electron beam is guided in a raster-like manner over a surface of the object to be examined. The electrons of the primary electron beam interact with the object to be examined. As a result of the interaction, in particular electrons are emitted from the object (so-called secondary electrons) and electrons of the primary electron beam are backscattered (so-called backscattered electrons). The secondary electrons and backscattered electrons are detected and used for image generation. An image of the object to be examined is thus obtained. Furthermore, interaction radiation is generated as a result of the interaction, for example X-ray radiation and cathodoluminescent light. The interaction radiation is used in particular for the analysis of the object.In a TEM, a primary electron beam is likewise generated by means of a beam generator and focused by means of a beam guidance system onto an object to be examined. The primary electron beam passes through the object to be examined. When the primary electron beam passes through the object to be examined, the electrons of the primary electron beam interact with the material of the object to be examined. The electrons passing through the object to be examined are imaged onto a luminescent screen or onto a detector (for example a camera) by a system consisting of an objective and a projectiv. The imaging can also be carried out in the scan mode of a TEM. Such a TEM is generally referred to as STEM. In addition, it can be provided to detect electrons backscattered from the object to be examined and / or secondary electrons emitted by the object to be examined by means of a further detector in order to image an object to be examined.Furthermore, it is known from the prior art to use combination devices for examining objects in which both electrons and ions can be guided onto an object to be examined. For example, it is known to additionally equip an SEM with an ion beam column. By means of an ion beam generator arranged in the ion beam column, ions are generated which are used for preparing an object (for example, removing material of the object or applying material to the object) or also for imaging. The SEM here serves in particular for observing the preparation, but also for further examination of the prepared or unprepared object.Application of material to the object takes place in a further known particle beam device, for example using the supply of a gas. The known particle beam apparatus is a combination apparatus that provides both an electron beam and an ion beam. The particle beam apparatus has an electron beam column and an ion beam column. The electron beam column provides an electron beam which is focused on an object. The object is arranged in a sample chamber held under vacuum. The ion beam column provides an ion beam which is also focused on the object. By means of the ion beam, for example, a layer of the surface of the object is removed. After removal of this layer, a further surface of the object is exposed. By means of a gas supply device, a gaseous precursor substance-a so-called precursor-can be introduced into the sample chamber. It is known to design the gas supply device with a needle-shaped device which can be arranged at a position of the object in a very close manner at a distance of a few μm, so that the gaseous precursor substance can be guided to this position as accurately as possible and in a high concentration. By interaction of the ion beam with the gaseous precursor substance, a layer of substance is deposited on the surface of the object. For example, it is known to introduce gaseous phenanthrene as the gaseous precursor substance into the sample chamber through the gas supply device. Then, a layer of carbon or a layer containing carbon is substantially deposited on the surface of the object. It is also known to use a gaseous precursor substance comprising metal to deposit a metal or a metal-containing layer on the surface of the object. However, the deposits are not limited to carbon and / or metals. Rather, any substances can be deposited on the surface of the object, for example semiconductors, nonconductors or other compounds. It is also known that the gaseous precursor substance is used for removing material of the object when interacting with a particle beam.The application of material to and / or the removal of material from the object is used, for example, to achieve a predefined thickness of the object.In order to carry out a high-resolution analysis of material structures of an object in a TEM or in an SEM with a transmission detector, it is known to prepare the object in such a way that the thickness of the object is less than 100 nm, since the electrons of an electron beam have a range of typically 1000 nm in solid materials when the electrons are transmitted through the object. The electrons have an energy of typically a few 10 keV up to a few 100 keV when entering the object. A thickness of the object of less than 100 nm ensures that a predominant part of the electrons passes through the object and can be detected by means of a detector.It is known from the prior art to process the object by means of an ion beam in order to achieve a thickness of the object of less than 100 nm, for example a thickness in the range from 1 nm to 80 nm or from 1 nm to 50 nm, wherein the region boundaries are included in the aforementioned regions. The processing of the object by means of the ion beam can be observed by imaging the object with an electron beam.A method known from the prior art for producing an object to be examined with a TEM or with an SEM using a transmission detector is described below. First, in a piece of material having, for example, dimensions in the millimeter range, a portion of the piece of material (also called lamella) is exposed using an ion beam and is prepared from the piece of material. The section has, for example, a thickness of a few micrometers (in particular 3 μm to 6 μm) and, for example, a length of a few 10 μm (in particular 30 μm to 80 μm). Subsequently, the part is fastened to a micromanipulator and lifted out of the material part. The part is then fastened to a TEM object holder (also called "TEM grid"). Material of the section is now ablated with an ion beam guided to the section until the section or at least one region of the section has a thickness of less than 100 nm. During the removal of the material from the part, the TEM object holder is first rotated from a starting position by 1° to 2° in a first direction about an axis of rotation in order to ensure good removal of material on a first side of the part. The TEM object holder is then rotated from the starting position by 1° to 2° in a second direction about the axis of rotation in order to ensure good removal of material on a second side of the section. The first side and the second side of the section are arranged opposite and spaced apart from each other. In order for the TEM object holder to be rotatable, the TEM object holder is arranged on a movably configured object table. The object table has mechanical movement units which enable a rotation of the TEM object holder.The determination of the thickness of a region of an object is known from the prior art. For this purpose, the object is arranged on a movable object holder. For example, the region is first exposed by means of a focused ion beam and the thickness of the region is subsequently determined. For this purpose, an electron beam of an SEM is scanned over the exposed region. According to the above description, the SEM is used for imaging. Based on images generated during the imaging, the thickness of the region of the object is determined. This determination of the thickness can be carried out automatically.When manufacturing a slat, faults in the manufacturing process of the slat and / or a condition of the material of the slat can lead to deviations in the machining of the slat. For example, a so-called curtaining effect can occur. The curing effect refers to an effect that can occur on a milled surface, which arises in particular from a machining with the ion beam. The curing effect is caused by a spatial variation of a sputtering rate of the object and modulation of a current density of the ions by a forward scattering of the ions. The curtaining effect prevents uniformity of a surface of the sipe. Additionally or alternatively, the machining can be disturbed in such a way that a lamella with non-plane-parallel surfaces is produced. The material composition of the blade may also interfere with the manufacturing process of the blade.According to the prior art, the disruptive influence of one or more of the aforementioned effects can be reduced, for example, by what is known as rocking of the object or what is known as backside thinning. During the drying, the object is moved during the processing with the charged particles in such a way that they strike the object at different angles. During backside thinning, material is ablated from a rear side of the object, so that a predeterminable thickness of the object is achieved without impairing the nature of a front side of the object.With regard to the prior art, reference is made to U.S. Pat. No. 8,536,525 B2, US 2007 / 0018099 A1, DE 10 2012 110 651 B4, U.S. Pat. No. 8,816,303 B2 and DE 10 2010 024 625 A1.In order to produce a lamella whose thickness has the smallest possible deviations from one or more predeterminable thicknesses, it may be necessary to carry out a plurality of processing steps of the lamella and a plurality of measurement processes of the thicknesses.The object of the invention is to specify an additional method for operating a particle beam device, a computer program product, and a particle beam device, with which the production of an object having a predeterminable thickness is easily possible and can be carried out in particular automatically.According to the invention, this object is achieved by means of a method for operating a particle beam device having the features of claim 1. A further method for determining a processing point with a particle beam device is given by claim 21. A computer program product having a program code which is loaded or loadable into a processor and which, when executed, controls a particle beam apparatus such that a method according to the invention is carried out is given by claim 24. Furthermore, the invention relates to a particle beam apparatus having the features of claim 25.The method according to the invention is used for operating a particle beam device for determining a thickness of an object, wherein, inter alia, in the method according to the invention, adjustment and / or determination of control parameter values of the particle beam device and processing of the object takes place by means of a first and / or a second particle beam. For example, the particle beam device has at least one first beam generator for generating the first particle beam with first charged particles and at least one second beam generator for generating the second particle beam with second charged particles. The first charged particles are, for example, electrons or ions. Further, the second charged particles are, for example, ions or electrons.The method according to the invention comprises method steps. The method steps are explained in more detail below.The method according to the invention comprises guiding the first particle beam of the particle beam device to at least one predeterminable first position on a first surface of the object using at least one guide unit of the particle beam device. In this case, the particle beam device has at least the first beam generator for generating the first particle beam. The first particle beam comprises the first charged particles. In addition, the particle beam device has at least the second beam generator for generating the second particle beam, wherein the second particle beam has the second charged particles.It is noted that the first surface of the object may be formed by any surface of the object.A guide unit is understood to mean any unit for guiding, for example, the first particle beam and / or, for example, the second particle beam onto the object, but also any units for shaping, for example, the first particle beam and / or, for example, the second particle beam, which is / are then guided to the object. The guide unit is designed, for example, as an objective lens for focusing, for example, the first particle beam and / or, for example, the second particle beam onto the object, as an electrostatic and / or magnetic unit for beam shaping or for beam guidance, as a stigmator, as a condenser lens and / or as a mechanically adjustable aperture unit, with which the first particle beam and / or the second particle beam is bounded. In particular, a beam column of the particle beam device is also understood as a guide unit.The method according to the invention also comprises detecting interaction particles and / or interaction radiation with a detector of the particle beam device, wherein the interaction particles and / or the interaction radiation result / result from an interaction of the first particle beam with the object when the first particle beam impinges on the at least one predeterminable first position on the first surface of the object.Furthermore, in the method according to the invention, a detection signal is generated based on the detected interaction particles and / or the detected interaction radiation using the detector.The detection signal can have a dependence, for example, on a number of detected interaction particles, a dependence, for example, on an intensity of the detected interaction radiation, a dependence, for example, on an energy of the detected interaction particles and / or of the detected interaction radiation, a dependence, for example, on a spatial distribution of the detected interaction particles and / or of the detected interaction radiation, a dependence, for example, on a spectral distribution of the detected interaction radiation, a dependence, for example, on an energy distribution of the detected interaction particles and / or a dependence, for example, on phase information of the detected interaction radiation.The method according to the invention also comprises determining a thickness of the object on the basis of the generated detection signal at the at least one predeterminable first position on the first surface of the object. A control unit of the particle beam device is used for determining the thickness. In this case, the thickness of the object is given by a length of a connecting straight line, wherein the connecting straight line connects the at least one predeterminable first position on the first surface of the object to a second position on a second surface of the object. For example, the thickness is given by the smallest possible distance between the predeterminable first position on the first surface of the object and a second position on the second surface of the object. It is pointed out that the thickness is not fundamentally given by the smallest possible distance between the predeterminable first position on the first surface of the object and any desired second position on the second surface of the object. Rather, the second position on the second surface of the object can be produced by a relative positioning with respect to the predeterminable first position on the first surface of the object. For example, the second position on the second surface of the object results from the predeterminable first position on the first surface of the object in such a way that the second position on the second surface of the object lies at an intersection point of an auxiliary line with the second surface of the object. In this case, the auxiliary line is formed, for example, by the auxiliary line running perpendicularly to an auxiliary plane through the first position on the first surface of the object, wherein the auxiliary plane is given by the first surface of the object. However, the auxiliary plane can also be formed, for example, by a surface which is to be achieved by the processing process of the object. In other words, the thickness is given by a material thickness of the object at the at least one predeterminable first position on the first surface of the object.The control unit of the particle beam device is used in particular for controlling and / or setting at least one functional unit of the particle beam device. A functional unit is understood above and also below as a structural unit of the particle beam device, which can be adjusted in any manner. For example, the position of the functional unit in the particle beam device can be adjusted. In particular, the functional unit can be designed as a movably designed object table. Additionally or alternatively, it is provided to set an electrostatic and / or magnetic configuration of the functional unit. The invention is not limited to the aforementioned possibilities of setting. Rather, the functional unit can be set in any manner suitable for the invention. The already explained guide unit is in particular designed as a functional unit.Furthermore, in the method according to the invention, a deviation of the determined thickness of the object from a predefinable thickness value of the object is determined at the at least one predefinable first position on the first surface of the object. For example, the determination of the deviation is carried out using the control unit. The deviation of the determined thickness of the object from the predefinable thickness value is understood to mean a difference between the determined thickness of the object and the predefinable thickness value. In other words, the deviation of the determined thickness of the object from the predefinable thickness value denotes a distance which arises mathematically from the difference between the determined thickness and the predefinable thickness value. In other words, an object having the thickness of the predefinable thickness value can be achieved by either removing or applying material for achieving the predefinable thickness value in the strength of the distance at the at least one predefinable first position on the first surface of the object.In other words, the deviation is determined at this at least one predefinable first position on the first surface of the object. The deviation can be used, for example, to determine whether further processing takes place at a second position on the first surface of the object-for example if the amount of the deviation exceeds a predefinable value. Whether material should be ablated or deposited on the first surface of the object at the at least one predeterminable second position for further processing is determined by the sign of the above-mentioned difference between the determined thickness and the predeterminable thickness value. The first position on the first surface of the object may be different from the second position on the first surface of the object. Alternatively, the first position on the first surface of the object is identical to the second position on the first surface of the object.The predefinable thickness value is selected, for example, from a first range of 1 nm to 100 nm, preferably selected from a second range between 1 nm and 80 nm, further preferably selected from a third range between 1 nm and 50 nm, the range boundaries being included in the aforementioned ranges.The method according to the invention also comprises adapting and / or determining at least one control parameter value of at least one control parameter using the control unit for controlling a functional unit of the particle beam device as a function of the determined deviation, wherein the functional unit influences at least one predefinable property of the particle beam device with respect to the second particle beam. For example, the control parameter can be embodied as a current which flows through a coil of the particle beam device, such that the first charged particles and / or the second charged particles are focused or defocusing by the coil. Furthermore, the control parameter can be designed, for example, as a voltage for accelerating and / or decelerating the first charged particles and / or second charged particles. In addition, the control parameter can be configured, for example, as a voltage for deflecting the first charged particles and / or the second charged particles. Furthermore, the control parameter can be designed, for example, as a signal for controlling the movably designed object table. The invention is not limited to the aforementioned examples of the control parameter. Rather, in the invention, any control parameter which is suitable for the invention can be used for controlling the functional unit of the particle beam device.If the amount of the determined deviation indicates, for example, that further processing is performed and if the difference between the determined thickness and the predefinable thickness value is greater than zero-i.e., if the determined thickness is greater than the predefinable thickness value-material at the at least one predefinable second position on the first surface of the object is to be ablated. If the amount of the determined deviation indicates, for example, that further processing takes place and the difference between the determined thickness and the predefinable thickness value is less than zero-i.e., if the determined thickness is less than the predefinable thickness value-material is to be applied at the at least one predefinable second position on the first surface of the object. According to the desired ablation / plot, the control parameter value of the at least one control parameter is adjusted.The determination of the at least one control parameter value is understood to mean, for example, an input of a value into the control unit of the particle beam device by a user of the particle beam device.Furthermore, in the method according to the invention, the functional unit is controlled with the at least one adapted control parameter value of the control parameter and / or with the at least one determined control parameter value of the control parameter using the control unit, such that the at least one predeterminable property of the particle beam device relating to the second particle beam is influenced by the functional unit.The method according to the invention also comprises guiding the second particle beam of the particle beam device to at least one predeterminable second position on the first surface of the object using the at least one guiding unit of the particle beam device and processing the object at the at least one predeterminable second position on the first surface of the object with the second particle beam. The object can be processed with the second particle beam, for example, by either removing or applying material at the at least one predeterminable second position on the first surface of the object.As already mentioned above, the at least one predeterminable second position on the first surface of the object can deviate from the at least one predeterminable first position on the first surface of the object. For example, the at least one predefinable second position on the first surface of the object may have a distance of at most 500 nm, in particular at most 250 nm, further in particular at most 100 nm, from the at least one predefinable first position on the first surface of the object. For example, the distance between the at least one predefinable second position on the first surface of the object and the at least one predefinable first position on the first surface of the object can be caused by a difference in the angles at which the first particle beam and the second particle beam strike the first surface of the object. As already explained above, the first predefinable position on the first surface of the object and the second predefinable position on the first surface of the object may be identical in one embodiment of the method according to the invention.The abovementioned method steps which are composed of the method are also referred to below in their entirety as basic methods.The invention has the advantage that in particular a determination of a thickness of an object, an adaptation and / or determination of control parameter values of the particle beam device and a processing of the object is easily made possible. In particular, the determination of the thickness of the object, the adaptation and / or determination of control parameter values of the particle beam device and the processing of the object can be carried out automatically.In one embodiment of the method according to the invention, it is additionally or alternatively provided that electrons or ions are used as the first charged particles. Additionally or alternatively, electrons or ions are used as the second charged particles.In a further embodiment of the method according to the invention, it is additionally or alternatively provided that method steps are carried out repeatedly. For example, the method according to the invention then comprises the following method steps:guiding the first particle beam of the particle beam device to the at least one predefinable first position on the first surface of the object using the at least one guide unit of the particle beam device;detecting the interaction particles and / or the interaction radiation with the detector of the particle beam device;generating the detection signal based on the detected interaction particles and / or the detected interaction radiation using the detector;determining the thickness of the object based on the generated detection signal at the at least one predefinable first position on the first surface of the object using the control unit of the particle beam device;determining the deviation of the determined thickness of the object from the predefinable thickness value of the object at the at least one predefinable first position on the first surface of the object; andperforming the following method steps: a. the adaptation and / or determination of the at least one control parameter value of the at least one control parameter using the control unit for controlling the functional unit of the particle beam device as a function of the determined deviation (for example, in this method step the control parameter value is set to a first value); b. the control of the functional unit with the at least one adapted control parameter value of the control parameter and / or with the at least one determined control parameter value of the control parameter using the control unit, so that the at least one predeterminable property of the particle beam device relating to the second particle beam is influenced by the functional unit; c. guiding the second particle beam of the particle beam device to the at least one predefinable second position on the first surface of the object using the at least one guiding unit of the particle beam device and processing the object at the at least one predefinable second position on the first surface of the object with the second particle beam;a renewed guidance of the first particle beam of the particle beam device to the at least one predefinable first position on the first surface of the object using the at least one guidance unit of the particle beam device;detecting further interaction particles and / or a further interaction radiation with the detector of the particle beam device;generating a further detection signal based on the detected further interaction particles and / or the detected further interaction radiation using the detector;determining a further thickness of the object based on the generated further detection signal at the at least one predefinable first position on the first surface of the object using the control unit of the particle beam device;determining a further deviation of the determined further thickness of the object from a further predefinable thickness value of the object at the at least one predefinable first position on the first surface of the object; andperforming the following method steps:aa. adjusting and / or determining at least one further control parameter value of at least one further control parameter using the control unit for controlling the functional unit of the particle beam device as a function of the determined further deviation, wherein the at least one control parameter can correspond to the at least one further control parameter (for example, in this method step, the control parameter value which was set to the first value in method step a is set to a second value in the course of method step aa, wherein the first value and the second value can be different);bb. driving the functional unit with the at least one adapted further control parameter value (which has now been adapted to the second value, for example) of the further control parameter and / or with the at least one determined further control parameter value (which has now been set to the second value, for example) of the further control parameter using the control unit, such that the at least one predeterminable property of the particle beam device relating to the second particle beam is influenced by the functional unit;cc. cc. guiding the second particle beam of the particle beam device to the at least one predefinable second position on the first surface of the object using the at least one guiding unit of the particle beam device and processing the object at the at least one predefinable second position on the first surface of the object with the second particle beam. With regard to the processing of the object at the at least one predeterminable second position on the first surface of the object with the second particle beam, reference is made to the explanations given further above which explain the processing of the object with the second particle beam.In the method according to the invention, in particular the further predefinable thickness value is different from the predefinable thickness value. In the embodiment explained above, the basic method as described above is thus carried out at least one further time, wherein the predefinable thickness value is replaced by the further predefinable thickness value. In this respect, it is provided, for example, that in the above manner the thickness of the object gradually approaches a target thickness. The above-explained embodiment therefore comprises an iterative method.The target thickness is selected, for example, from the first range from 1 nm to 100 nm, preferably selected from the second range between 1 nm and 80 nm, more preferably selected from the third range between 1 nm and 50 nm, the range boundaries being included in the aforementioned ranges.The method according to the invention is not limited to the above-described repetition of all method steps of the basic method twice. Rather, in a further embodiment of the method according to the invention, an arbitrarily frequent repetition of the basic method with adapted further thickness values is provided. A number of repetitions can depend, for example, on the thickness of the object, the target thickness and / or the processing of the object with the second particle beam. In particular, the basic method can be repeated until the thickness of the object corresponds to the target thickness.In particular, by repeating the basic method with different predefinable thickness values, deviations of large amount between the predefinable thickness value and the specific thickness of the object can be avoided. This makes possible in particular a gentle processing of the object, since an amount of the material which is ablated or applied in one pass of the method is limited and in particular cannot exceed a predeterminable maximum value.The above embodiment of the method according to the invention is not limited to the sequence of the method steps listed above. Different sequences of the method steps are conceivable, which are suitable for achieving the object in the sense of the invention. Alternatively or additionally, the method according to the invention also allows the parallel execution of at least two method steps. Furthermore, the above embodiment of the method according to the invention is also not limited to the complete scope of all the above-mentioned method steps. In particular, it is conceivable that in further embodiments, individual ones or a plurality of the above or following method steps are omitted. For example, in a further pass of the basic method, the renewed determination of a thickness of the object and, associated therewith, also the renewed determination of a deviation can be omitted. In such a case, the adaptation and / or determination of the further control parameter value can then be omitted. The functional unit can then be actuated again with the control parameter value adapted in the previous pass and / or with the control parameter value determined in the previous pass. This can be advantageous if, for example, the initially determined deviation has a comparatively high value in terms of amount and thus a plurality of processing steps are lined up one after the other without intermediate checking of the thickness of the object.In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that as a further method step, a calculation of the control parameter value with data and / or a direct loading of the control parameter value from a database as control parameter into the control unit is carried out. The data for calculating the control parameter value can be stored data on a memory unit. The storage unit is designed, for example, as a data carrier which has, for example, the database. However, the data can also result from process parameters and / or measurement parameters of the method by determination and / or calculation. The database serves to store the determined and / or calculated data, for example control parameter values.In the above specific embodiment of the method according to the present invention, it may additionally or alternatively be provided that, as a still further method step, a calculation of the further control parameter value with data and / or a direct loading of the further control parameter value from the database as further control parameters into the control unit is carried out. The data for calculating the further control parameter value can be stored data on the memory unit. The storage unit is designed, for example, as the data carrier which has, for example, the database. However, the data can also result from process parameters and / or measurement parameters of the method by determination and / or calculation. The database is used to store the determined and / or calculated data, for example control parameter values and / or further control parameter values.In a further embodiment of the method according to the invention, it is additionally or alternatively provided that the processing of the object comprises one of the following method steps:if the determined deviation at the at least one predefinable first position on the first surface of the object is greater than a predefinable threshold value in terms of amount, material of the object at the at least one predefinable second position on the first surface of the object is ablated and / or deposited using the particle beam device;if the determined deviation at the at least one predefinable first position on the first surface of the object is smaller than the predefinable threshold value in terms of amount, then no further material is ablated and / or deposited at the at least one predefinable second position on the first surface of the object using the particle beam device.The threshold value can be predefined in this case, for example by the user inputting the threshold value and / or by retrieving the threshold value from a database. The aforementioned database corresponds, for example, to the database already mentioned further above. Alternatively, the aforementioned database is different from the aforementioned database. The threshold value may also be obtained from a calculation, for example based on process parameters and / or measurement parameters. The threshold value can thus specify a deviation in terms of amount of the determined thickness of the object from the predefinable thickness value of the object at the at least one predefinable first position on the first surface of the object, wherein the deviation in terms of amount corresponds to a sufficient quality of the processing at the at least one predefinable second position on the first surface of the object, so that no further processing takes place there.The removal of material using the particle beam device can be carried out, for example, by processing the object with the second particle beam, in particular using ions as particles. Additionally or alternatively, as described above, a gaseous precursor substance can be used for ablating material of the object with the first and / or second particle beam.The depositing of material using the particle beam device can be effected in particular, as described above, by using a gaseous precursor substance together with the first and / or second particle beam for processing the object. Depositing is basically the application of material to the object.In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the threshold value is stored in a further database and / or loaded from the further database into the control unit. The further database can be designed differently from the databases already mentioned further above. Alternatively, the further database can correspond, for example, to one of the databases already mentioned further above.In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that further method steps follow the aforementioned basic method. For example, the method according to the invention is repeated at at least one further predefinable first position on the first surface of the object and at a further predefinable second position on the first surface of the object. In this case, the at least one further predefinable first position on the first surface of the object can be different from the at least one predefinable first position on the first surface of the object, and the at least one further predefinable second position on the first surface of the object can be different from the at least one predefinable second position on the first surface of the object. The at least one further predefinable first position on the first surface of the object and the at least one further predefinable second position on the first surface of the object may be different or identical. The method then comprises in particular the following method steps:guiding the first particle beam of the particle beam device to the at least one predefinable first position on the first surface of the object using the at least one guide unit of the particle beam device;detecting the interaction particles and / or the interaction radiation with the detector of the particle beam device;generating the detection signal based on the detected interaction particles and / or the detected interaction radiation using the detector;determining the thickness of the object based on the generated detection signal at the at least one predefinable first position on the first surface of the object using the control unit of the particle beam device;determining the deviation of the determined thickness of the object from the predefinable thickness value of the object at the at least one predefinable first position on the first surface of the object; andperforming the following method steps: a. the adaptation and / or determination of the at least one control parameter value of the at least one control parameter using the control unit for controlling the functional unit of the particle beam device as a function of the determined deviation (for example, in this method step the control parameter value is set to a third value); b. the control of the functional unit with the at least one adapted control parameter value of the control parameter and / or with the at least one determined control parameter value of the control parameter using the control unit, so that the at least one predeterminable property of the particle beam device relating to the second particle beam is influenced by the functional unit; c. guiding the second particle beam of the particle beam device to the at least one predefinable second position on the first surface of the object using the at least one guiding unit of the particle beam device and processing the object at the at least one predefinable second position on the first surface of the object with the second particle beam. With regard to the processing of the object at the at least one predeterminable second position on the first surface of the object, reference is made to the explanations given further above, which also apply here;guiding the first particle beam of the particle beam device to at least one further predefinable first position on the first surface of the object using the at least one guide unit of the particle beam device;detecting in turn further interaction particles and / or in turn further interaction radiation with the detector of the particle beam device;generating a yet further detection signal based on the detected yet further interaction particles and / or the detected yet further interaction radiation using the detector;determining a yet further thickness of the object based on the generated yet further detection signal at the at least one further predefinable first position on the first surface of the object using the control unit of the particle beam device;determining a further deviation of the determined further thickness of the object from a further predefinable thickness value of the object at the at least one further predefinable first position on the first surface of the object; andperforming the following method steps:aa. adjusting and / or determining at least one further control parameter value of at least one further control parameter using the control unit for controlling the functional unit of the particle beam device as a function of the determined further deviation, wherein the at least one control parameter can correspond to the at least one further control parameter (for example, in this method step, the control parameter value which was set to the third value in method step a is set to a fourth value in the course of method step aa, wherein the third value and the fourth value can be different);bb. driving the functional unit with the at least one adapted further control parameter value of the further control parameter and / or with the at least one determined further control parameter value of the further control parameter using the control unit, such that the at least one predeterminable property of the particle beam device relating to the second particle beam is influenced by the functional unit;cc. cc. guiding the second particle beam of the particle beam device to the at least one further predefinable second position on the first surface of the object using the at least one guiding unit of the particle beam device and processing the object at the at least one further predefinable second position on the first surface of the object with the second particle beam. With regard to the machining, reference is made to the explanations given further above, which also apply here.The thickness value, which in turn can be further predetermined, can correspond, for example, to the predetermined thickness value. Alternatively, according to an embodiment of the method according to the invention mentioned above, the further predefinable thickness value can in turn be different from the predefinable thickness value.The again further thickness value is selected, for example, from the first range from 1 nm to 100 nm, preferably selected from the second range between 1 nm and 80 nm, further preferably selected from the third range between 1 nm and 50 nm, wherein the range boundaries are included in the aforementioned ranges.In a yet further embodiment of the method according to the invention, it is additionally or alternatively provided that the at least one further predefinable first position on the first surface of the object corresponds to the at least one predefinable first position on the first surface of the object and that the at least one further predefinable second position on the first surface of the object corresponds to the at least one predefinable second position on the first surface of the object. In other words, the machining of the identical position is performed a plurality of times. In contrast to an above-mentioned embodiment of the method according to the invention, this further embodiment may, for example, not have an adaptation of the thickness value.In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the predefinable thickness value is identical for all first positions on the first surface of the object. In other words, the object produced by means of the method according to the invention has a uniform thickness. In still other words, the object produced by means of the method according to the invention is produced with plane-parallel surfaces. In other words, the thickness of the object, which is produced by means of the method according to the invention, at the at least one predefinable first position on the first surface of the object corresponds to the thickness of the object at the at least one further predefinable first position on the first surface of the object.In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the method according to the invention is extended by a measurement step. For example, the thickness can be determined again after the object has been processed using the measurement step. The measurement step is composed of a plurality of method steps. The method steps of the measuring step are as follows:the renewed guidance of the first particle beam of the particle beam device to the at least one predefinable first position on the first surface of the object using the at least one guidance unit;detecting the further interaction particles and / or the further interaction radiation with the detector of the particle beam device, wherein the further interaction particles and / or the further interaction radiation emerge / emerge from the interaction of the first particle beam with the object upon impingement of the first particle beam on the at least one predefinable first position on the first surface of the object;generating the further detection signal based on the detected further interaction particles and / or the detected further interaction radiation using the detector;determining the further thickness of the object based on the generated further detection signal at the at least one predefinable first position on the first surface of the object.In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that a dependence of the detection signal on the thickness of the object at the at least one predeterminable first position on the first surface of the object is used for determining the thickness of the object. In other words, there is a dependence between the detection signal and the thickness of the object, wherein the dependence is usable for determining the thickness of the object.In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that at least one of the following properties is taken into account when determining the thickness of the object using the dependence of the detection signal on the thickness of the object:a material of the object at the at least one predeterminable first position on the first surface of the object;at least one further material of the object at an inner position within the object, to which the first charged particles of the first particle beam pass;a surface structure at the at least one predeterminable first position on the first surface of the object;a shape of the first particle beam at the at least one predefinable first position on the first surface of the object;an extension of the first particle beam at the at least one predefinable first position on the first surface of the object;an intensity of the first particle beam at the at least one predefinable first position on the first surface of the object;a landing energy of the first particle beam at the at least one predefinable first position on the first surface of the object.The inner position here denotes, for example, a position which is arranged within the object. In particular, this inner position is arranged close to the at least one predefinable first position, so that the first particle beam and / or the second particle beam first passes this one predefinable first position and then the inner position.The surface structure can be given, for example, by the roughness of the surface of the object. For example, it can also occur that a still further material, which is located only in places and thus not covering the surface of the object, partially or completely forms the surface structure.The shape of the first particle beam denotes, for example, the shape of the first particle beam when it impinges on the object. The shape of the first particle beam can be influenced by the above-mentioned guide unit of the particle beam device, i.e. for example by the electrostatic and / or magnetic unit for beam shaping or for beam guidance, by the objective lens, by the stigmator, by the condenser lens and / or by the mechanically adjustable aperture unit.The extent of the first particle beam can likewise be influenced, for example, by the above-mentioned guide unit of the particle beam apparatus, that is to say, for example, by the electrostatic and / or magnetic unit for beam shaping or for beam guidance, by the objective lens, by the stigmator, by the condenser lens and / or by the mechanically adjustable aperture unit.The intensity of the first particle beam denotes, for example, the number of charged particles that reach an area on the object in a period of time. In other words, the intensity of the first particle beam denotes the current which is generated by the first particle beam in a specific region on the object.Landing energy refers, for example, to the kinetic energy that a single charged particle of the first charged particles carries upon impact with the object.In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the determination of the thickness is carried out in such a way that the detection signal is used for determining the thickness of the object by a comparison with an assignment of predefinable detection signals to thicknesses of the object. In other words, the thickness of the object is determined in such a way that the detection signal is compared with the assignment of predefinable detection signals to thicknesses of the object. If the detection signal corresponds to a predefinable detection signal, the thickness of the object corresponds to the thickness assigned to the predefinable detection signal. The assignment of predefinable detection signals to thicknesses of the object can be stored in a database. The assignment of predefinable detection signals to thicknesses of the object can also be derived from a calculation.In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the detection signal is generated based on the detected interaction particles and / or the detected interaction radiation. The detected interaction particles are formed by at least one of the following possibilities:transmitting electrons detected using the detector;reflected electrons detected using the detector;secondary particles, in particular secondary electrons, detected using the detector;backscatter particles, particularly backscatter electrons, are detected using the detector.Additionally or alternatively, the detected interaction radiation is formed by at least one of the following types of radiation:X-ray radiation detected using the detector; andcathodoluminescent light detected using the detector.In a yet further embodiment of the method according to the invention, it is additionally or alternatively provided that the first charged particles of the first particle beam of the particle beam device are transmitted through the object and / or that the second charged particles of the second particle beam of the particle beam device are transmitted through the object.In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the first surface of the object, which is directed toward the second particle beam, encloses an angle of 0° to 90° with the second particle beam of the particle beam device guided to the at least one predeterminable second position on the first surface of the object, wherein this is achieved by carrying out at least one of the following method steps:rotating a movable object holder from a starting position in a first rotational direction about a first rotational axis, wherein the object is arranged on the movable object holder;rotating the at least one guide unit of the particle beam device in a second rotational direction about a second rotational axis;driving the functional unit with an adapted deflection parameter value of a deflection parameter using the control unit, such that the second particle beam impinges on the at least one predeterminable second position on the first surface of the object from a predeterminable direction.The range limits of the aforementioned range from 0° to 90° are included in the aforementioned range.In a possible embodiment of the method according to the invention, the control parameter and / or the further control parameter is designed as the deflection parameter.In a yet further embodiment of the method according to the invention, it is additionally or alternatively provided that the first surface of the object, which is directed towards the second particle beam, encloses an angle of 0° to -90° with the second particle beam of the particle beam device guided to the at least one predeterminable second position on the first surface of the object, wherein this is achieved by carrying out at least one of the following method steps:rotating the movable object holder from the starting position in a third rotational direction about the first rotational axis, wherein the third rotational direction is opposite the first rotational direction;rotating the at least one guide unit of the particle beam device in a fourth rotational direction about the second rotational axis, wherein the fourth rotational direction is opposite the second rotational direction;driving the functional unit with the adapted deflection parameter value of the deflection parameter using the control unit, such that the second particle beam impinges on the at least one predefinable second position on the first surface of the object from the predefinable direction.The range limits of the aforementioned range from 0° to -90° are included in the aforementioned range.In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the first axis of rotation corresponds to the second axis of rotation.In a yet further embodiment of the method according to the invention, it is additionally or alternatively provided that the deflection parameter value is stored in a yet further database and / or is called up from the yet further database, i.e. is loaded into the control unit, for example. In this case, the yet further database can correspond, for example, to one of the databases already mentioned above.In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the functional unit influences at least one of the following properties of the second particle beam:a shape of the second particle beam at the at least one predefinable second position on the first surface of the object;an extension of the second particle beam at the at least one predefinable second position on the first surface of the object;an intensity of the second particle beam at the at least one predefinable second position on the first surface of the object;a landing energy of the second particle beam at the at least one predefinable second position on the first surface of the object;a deflection of the second particle beam in a direction in which the second particle beam is guided;a dwell time of the second particle beam at the at least one predefinable second position on the first surface of the object;a distance between object points on the first surface of the object, to which the second particle beam is guided using the at least one guide unit of the particle beam device;a further dwell time of the second particle beam on the object points on the first surface of the object; andparameters for controlling a scanning device, wherein the scanning device is used to guide the second particle beam onto the object points on the first surface of the object.With regard to the shape of the second particle beam, the extent of the second particle beam, the intensity of the second particle beam and the landing energy of the second particle beam, reference is made to the explanations relating to the shape of the first particle beam, to the extent of the first particle beam, to the intensity of the first particle beam and to the landing energy of the first particle beam, which likewise apply here as well.The dwell time denotes, for example, the time duration that the second particle beam remains at the at least one predefinable second position on the first surface of the object.The distance (also called pixel spacing) between object points indicates how far the object points are separated on the first surface of the object. In this case, the points on the first surface of the object to which the second particle beam is guided using the at least one guide unit are referred to as object points. The distance can be formed, for example, by the distance between the predeterminable second position on the first surface of the object and the further predeterminable second position on the first surface of the object.The further dwell time denotes, for example, the time duration that the second particle beam remains on the object point.The parameters for controlling the raster device denote further parameters which are suitable for controlling the functional unit in the sense of the invention in order to guide the second particle beam onto the object points on the first surface of the object in such a way that processing of the object in the sense of the invention is made possible. In the context of the invention, a scanning device is understood to mean one of the at least one functional units of the particle beam device. The parameters for controlling the raster device can relate, for example, to a time duration between two successive processings of object points. Furthermore, the parameters for controlling the raster device can also relate, for example, to a sequence of the processing of object points.All interaction particles mentioned further above or mentioned further below are, for example, secondary particles (in particular secondary electrons or secondary ions) and / or backscattered particles (for example backscattered electrons). The interaction radiation mentioned further above or mentioned further below is, for example, X-ray radiation and / or cathodoluminescent light.All embodiments of the method according to the invention are not restricted to the sequences of the method steps listed above. Rather, any desired sequences of the method steps can be used which are suitable for achieving the object in the sense of the invention. Alternatively or additionally, the parallel execution of at least two method steps is also provided. Alternatively or additionally, the omission of individual method steps is also provided.The invention also relates to a further method for determining a processing point on a first surface of an object using a particle beam device. The particle beam device has at least one first beam generator for generating a first particle beam, wherein the first particle beam has first charged particles. In addition, the particle beam device has at least one second beam generator for generating a second particle beam, wherein the second particle beam has second charged particles. The further method according to the invention comprises processing the object using the second particle beam by guiding the second particle beam to a location of the object. For this purpose, for example, the second particle beam can be guided onto the location using at least one guide unit. It is noted that the location may be on any surface of the object.The further process according to the invention comprises the following process steps.The further method according to the invention comprises guiding the first particle beam of the particle beam device to at least one predeterminable first position on a first surface of the object using the at least one guiding unit of the particle beam device. With regard to the particle beam device and the guide unit, reference is made to the explanations given further above and below, which also apply here. It is pointed out that the predefinable first position on the first surface of the object may be different and / or identical to the location of the object.The further method according to the invention also comprises detecting interaction particles and / or interaction radiation with a detector of the particle beam device, wherein the interaction particles and / or the interaction radiation result / emerge from an interaction of the first particle beam with the object when the first particle beam impinges on the at least one predeterminable first position on the first surface of the object.Furthermore, in the further method according to the invention, a detection signal is generated based on the detected interaction particles and / or the detected interaction radiation using the detector.With regard to the detector, the detection signal, the interaction particles and the interaction radiation, reference is made to the explanations given further above and below, which also apply here.The further method according to the invention also comprises determining a thickness of the object on the basis of the generated detection signal at the at least one predeterminable first position on the first surface of the object. A control unit of the particle beam device is used for determining the thickness. In this case, the thickness of the object is given by a length of a connecting straight line, wherein the connecting straight line connects the at least one predeterminable first position on the first surface of the object to a second position on a second surface of the object.With regard to the thickness of the object, the control unit, the connecting straight lines and the second position on the second surface of the object, reference is made to the explanations given further above and below, which also apply here.Furthermore, in the further method according to the invention, the at least one predefinable first position on the first surface of the object is determined as a processing point if the determined thickness deviates from a predefinable thickness value. In other words, the at least one predefinable first position on the first surface of the object can be identified as a processing point if the determination of the thickness of the object at the at least one predefinable first position on the first surface of the object yields a value that indicates that this thickness has changed. This change can have been effected, for example, by processing the object with the second particle beam when it was guided to the location on the object. In other words, the processing point refers to the position on the first surface of the object whose thickness has changed. In other words, the processing point is a position on the first surface of the object that has been processed.In a further embodiment of the further method according to the invention, it is additionally or alternatively provided that the determination of the thickness of the object is carried out using the control unit of the particle beam device in such a way that the generated detection signals, process parameters and / or measurement parameters are matched to values of a database, wherein the database mentioned above corresponds, for example, to the database already mentioned further above. Additionally or alternatively, a calculation can be carried out by the processor of the particle beam device on the basis of the generated detection signals, the process parameters and / or the measurement parameters.In yet another embodiment of the further method according to the invention, it is additionally or alternatively provided that the predefinable thickness value arises from a further database by retrieving the thickness value. Additionally or alternatively, the predefinable thickness value can be effected by an input by a user of the particle beam device into a control unit of the particle beam device.The further database can correspond to the database, for example.The invention also relates to a computer program product having a program code which can be loaded or is loaded into a processor of a particle beam device, wherein the program code, when executed in the processor, controls the particle beam device such that a method is carried out with at least one of the features above or below or with a combination of at least two of the features above or below.The invention further relates to a particle beam device for imaging, processing and / or analysis of an object, wherein the particle beam device has already been explained further above and is explained further below. This is summarized briefly below. The particle beam device according to the invention has at least one first beam generator for generating a first particle beam with first charged particles. The first charged particles are, for example, electrons or ions. The particle beam device according to the invention has at least one second beam generator for generating a second particle beam with second charged particles. The second charged particles are, for example, ions or electrons. Furthermore, the particle beam device has at least one functional unit. A functional unit is understood above and also below as a structural unit of the particle beam device, which can be adjusted in any manner. The functional unit influences at least one predefinable property of the particle beam device. For example, the position of the functional unit in the particle beam device can be adjusted. Additionally or alternatively, it is provided that the functional unit can be designed to be electrostatic and / or magnetic. The electrostatic and / or magnetic configuration of the functional unit can be adjusted. The invention is not limited to the aforementioned possibilities of setting. Rather, the functional unit can be set in any manner suitable for the invention.The particle beam device according to the invention furthermore has at least one control unit for controlling the functional unit and for determining a thickness of the object. Furthermore, the particle beam device according to the invention has at least one guide unit for guiding the first particle beam and / or the second particle beam onto the object. Additionally or alternatively, the guide unit is also designed for focusing the first particle beam and / or the second particle beam. The guide unit is designed, for example, as the functional unit. Furthermore, the particle beam device according to the invention has at least one detector for detecting interaction particles and / or interaction radiation which emerge / emerge from an interaction of the first particle beam and / or of the second particle beam with the object when the first particle beam and / or of the second particle beam impinges on the object. Furthermore, the particle beam device according to the invention is provided with at least one display unit for displaying an image of the object and / or a representation of data about the object, wherein the image and / or the representation is / are generated on the basis of detection signals which are generated by the detected interaction particles and / or the detected interaction radiation. In addition, the particle beam device according to the invention has a processor in which a computer program product having the features already mentioned further above is loaded.In a further embodiment of the particle beam device according to the invention, it is additionally or alternatively provided that the guide unit is designed as an objective lens and / or a raster device. For example, the raster device is designed such that the first particle beam and / or the second particle beam are guided in a targeted manner onto a region on a surface of the object. The rastering device is designed, for example, in such a way that a rastering process is carried out. In an exemplary rastering process, the first particle beam and / or the second particle beam is guided onto the object and over the object. In particular, the first particle beam and / or the second particle beam is guided in the course of the exemplary rastering process to any desired number of locations of the region on the surface of the object.In a yet further embodiment of the particle beam device according to the invention, it is additionally or alternatively provided that the particle beam device has at least one of the following features for realizing a predeterminable angle between the first particle beam and / or the second particle beam and the object:a movably configured object holder for holding and positioning the object;the guide unit of the particle beam device is configured to be movable;the functional unit is designed such that the second particle beam impinges on the object from the predeterminable direction, an angle between the second particle beam and the object being dependent on the actuation of the functional unit.In yet another embodiment of the particle beam device according to the invention, it is additionally or alternatively provided that the functional unit comprises the movably configured object holder.In particular, it is provided that the particle beam device according to the invention is designed as an electron beam device and / or as an ion beam device.Further practical embodiments and advantages of the invention are described below in conjunction with the drawings. The following are shown: FIG. 1 shows a first embodiment of a particle beam device according to the invention; FIG. 2 shows a second embodiment of a particle beam device according to the invention; FIG. 2A is a schematic illustration of an object; FIG. 3 shows a schematic illustration of an object table of a particle beam device according to the invention; FIG. 4 shows a further schematic illustration of the object table according to FIG. 3 ; FIG. 5 shows a schematic illustration of a sequence of a first embodiment of a method according to the invention for operating a particle beam device; FIG. 5A shows a schematic illustration of a further sequence of the first embodiment of a method according to the invention for operating a particle beam device; FIG. 6 shows a schematic illustration of a sequence of a second embodiment of a method according to the invention for operating a particle beam device; FIG. 7 shows a schematic illustration of a sequence of a third embodiment of a method according to the invention for operating a particle beam device; FIG. 7A shows a schematic illustration of a sequence of a fourth embodiment of a method according to the invention for operating a particle beam device; FIG. 8 shows a schematic illustration of a sequence of a fifth embodiment of a method according to the invention for operating a particle beam device; FIG. 8A shows a schematic illustration of a sequence of a sixth embodiment of a method according to the invention for operating a particle beam device; FIG. 9 shows a schematic illustration of a sequence of a seventh embodiment of a method according to the invention for operating a particle beam device; FIG. 10 shows a schematic illustration of a sequence of an eighth embodiment of a method according to the invention for operating a particle beam device; FIG. 11 shows a schematic illustration of a sequence of a ninth embodiment of a method according to the invention for operating a particle beam device; and FIG. 12 shows a schematic illustration of a sequence of a first embodiment of a further method according to the invention for operating a particle beam device.The invention will now be explained in more detail by means of particle beam apparatuses in the form of a combination apparatus which has an electron beam column and an ion beam column. It is expressly pointed out that the invention can be used in any particle beam device, in particular in any combination device.FIG. 1 shows a schematic illustration of a particle beam device in the form of a combination device 200. The combination device 200 has two particle beam columns. On the one hand, the combination device 200 has an SEM 100. The SEM 100 has a first beam generator in the form of an electron source 101 which is formed as a cathode. Further, the SEM 100 is provided with an extraction electrode 102 and an anode 103 set on one end of a beam guide tube 104 of the SEM 100. For example, the electron source 101 is designed as a thermal field emitter. However, the invention is not limited to such an electron source 101. Rather, any electron source may be used.Electrons exiting the electron source 101 form a primary electron beam. The electrons are accelerated to anode potential due to a potential difference between the electron source 101 and the anode 103. In the embodiment shown here, the anode potential is 100 V to 35 kV with respect to a ground potential of a housing of a sample chamber 120, for example 5 kV to 15 kV, in particular 8 kV. Alternatively, however, it could also be at ground potential.Two condenser lenses are arranged on the beam guiding tube 104, namely a first condenser lens 105 and a second condenser lens 106. In this case, starting from the electron source 101 as seen in the direction of a first objective lens 107, first the first condenser lens 105 and then the second condenser lens 106 are arranged. It is explicitly pointed out that further embodiments of the SEM 100 may have only a single condenser lens. A first aperture unit 108 is arranged between the anode 103 and the first condenser lens 105. The first aperture unit 108 together with the anode 103 and the beam guiding tube 104 is at high-voltage potential, namely the potential of the anode 103 or at ground. The first diaphragm unit 108 includes a plurality of first diaphragm apertures 108A, one of which is shown in FIG. 1. For example, two first apertures 108A are provided. Each of the plurality of first apertures 108A has a different aperture diameter. By means of an adjustment mechanism (not shown), it is possible to set a desired first diaphragm opening 108A to a first beam axis 709 of the SEM 100. It is explicitly pointed out that in further embodiments the first diaphragm unit 108 can be provided with only a single diaphragm opening 108A. In this embodiment, an adjusting mechanism may not be provided. The first aperture unit 108 is then configured to be stationary. A stationary second aperture unit 109 is arranged between the first condenser lens 105 and the second condenser lens 106. Alternatively, it is provided that the second aperture unit 109 is configured to be movable.The first objective lens 107 has pole shoes 110 in which a bore is formed. The beam guide tube 104 is guided through this bore. A coil 111 is arranged in the pole shoes 110.In a lower portion of the beam guide tube 104, an electrostatic delay device is disposed. This has a single electrode 112 and a tube electrode 113. The tube electrode 113 is arranged at an end of the beam guiding tube 104 which faces an object 125 arranged on a movably formed object holder 114.Together with the beam-guiding tube 104, the tube electrode 113 is at the potential of the anode 103, while the individual electrode 112 and the object 125 are at a lower potential than the potential of the anode 103. In the present case, this is the ground potential of the housing of a sample chamber 120. In this way, the electrons of the primary electron beam can be decelerated to a desired energy, which is required for the imaging, processing and / or analysis of the object 125.The SEM 100 further comprises a raster device 115, by means of which the primary electron beam can be deflected and rastered over the object 125. The electrons of the primary electron beam interact with the object 125. As a result of the interaction, interaction particles and / or interaction radiation are formed which are / will be detected. As interaction particles, in particular electrons are emitted from the first surface or from regions of the object 125 close to the surface-so-called secondary electrons-or electrons of the primary electron beam are backscattered-so-called backscattered electrons.The object 125 and the single electrode 112 can also be at different potentials and different from ground. This makes it possible to adjust the location of retardation of the primary electron beam with respect to the object 125. For example, if the delay is performed quite close to the object 125, aberrations become smaller.For the detection of the secondary electrons and / or the backscattered electrons, a detector arrangement is arranged in the beam guiding tube 104, which detector arrangement has a first detector 116 and a second detector 117. The first detector 116 is arranged along the first beam axis 709 on the source side, while the second detector 117 is arranged along the first beam axis 709 on the object side in the beam guide tube 104. The first detector 116 and the second detector 117 are arranged offset with respect to one another in the direction of the first beam axis 709 of the SEM 100. Both the first detector 116 and the second detector 117 each have a passage opening through which the primary electron beam can pass. The first detector 116 and the second detector 117 are at approximately the potential of the anode 103 and of the beam guiding tube 104. The first beam axis 709 of the SEM 100 runs through the respective through openings.The second detector 117 serves mainly for the detection of secondary electrons. The secondary electrons initially have a low kinetic energy and arbitrary movement directions when exiting from the object 125. The strong extraction field emanating from the tube electrode 113 accelerates the secondary electrons in the direction of the first objective lens 107. The secondary electrons enter the first objective lens 107 in an approximately parallel manner. The beam diameter of the secondary electron beam also remains small in the first objective lens 107. The first objective lens 107 now acts strongly on the secondary electrons and generates a comparatively short focus of the secondary electrons with sufficiently steep angles to the first beam axis 709, so that the secondary electrons diverge far after the focus and strike the second detector 117 on its active surface. Electrons backscattered from the object 125, i.e. backscattered electrons which have a relatively high kinetic energy when exiting from the object 125, are, on the other hand, only detected to a small extent by the second detector 117. The high kinetic energy and the angles of the backscattered electrons to the first beam axis 709 upon exit from the object 125 result in a beam waist, i.e. a beam region with a minimum diameter, of the backscattered electrons being situated in the vicinity of the second detector 117. A large part of the backscattered electrons passes through the through hole of the second detector 117. The first detector 116 therefore essentially serves for detecting the backscattered electrons.In a further embodiment of the SEM 100, the first detector 116 can additionally be formed with a counter field grating 116A. The opposing field grating 116A is arranged on the side of the first detector 116 directed toward the object 125. The opposing field grating 116A has a negative potential with respect to the potential of the beam guiding tube 104 in such a way that only backscatter electrons with a high energy pass through the opposing field grating 116A to the first detector 116. Additionally or alternatively, the second detector 117 has a further counter-field grating which is formed analogously to the aforementioned counter-field grating 116A of the first detector 116 and has an analog function.Furthermore, the SEM 100 has a chamber detector 119, for example an Everhart-Thornley detector or an ion detector, which has a metal-coated detection surface which shields light, in the sample chamber 120.The detection signals generated by the first detector 116, the second detector 117, and the chamber detector 119 are used to generate an image or images of a first surface of the object 125.It is explicitly pointed out that the diaphragm openings of the first diaphragm unit 108 and of the second diaphragm unit 109 and the passage openings of the first detector 116 and of the second detector 117 are illustrated in exaggerated form. The through openings of the first detector 116 and of the second detector 117 have an extent perpendicular to the first beam axis 709 in the range from 0.5 mm to 5 mm. For example, they are circular and have a diameter in the range from 1 mm to 3 mm perpendicular to the first beam axis 709.In the embodiment shown here, the second aperture unit 109 is designed as an aperture stop and is provided with a second aperture stop 118 for the passage of the primary electron beam, which aperture stop has an extent in the range from 5 μm to 500 μm, for example 35 μm. Alternatively, in a further embodiment, it is provided that the second aperture unit 109 is provided with a plurality of aperture openings which can be displaced mechanically with respect to the primary electron beam or which can be achieved by the primary electron beam using electrical and / or magnetic deflection elements. The second diaphragm unit 109 is designed as a compression stage diaphragm. This separates a first region, in which the electron source 101 is arranged and in which an ultra-high vacuum prevails (10 -1 hPa to 10 -12 hPa), from a second region, which has a high vacuum (10 -3 hPa to 10 -7 hPa). The second region is the intermediate pressure region of the jet guide tube 104 which leads to the sample chamber 120.The sample chamber 120 is under vacuum. To generate the vacuum, a pump (not shown) is arranged on the sample chamber 120. In the embodiment shown in FIG. 1, the sample chamber 120 is operated in a first pressure range or in a second pressure range. The first pressure range comprises only pressures less than or equal to 10 -3 hPa, and the second pressure range comprises only pressures greater than 10 -3 hPa. In order to ensure these pressure ranges, the sample chamber 120 is closed by vacuum technology.The object holder 114 is arranged on an object table 122. The object table 122 has moving units, so that the object holder 114 is formed to be movable in three directions arranged perpendicular to each other, namely, in an x direction (first table axis), in a y direction (second table axis) and in a z direction (third table axis). In addition, the object table 122 has movement units, so that the object holder 114 can be rotated about two rotation axes (table rotation axes) arranged perpendicular to one another. The invention is not limited to the above-described stage 122. Rather, the object table 122 can have further translation axes and rotation axes along which or about which the object holder 114 can move.The SEM 100 further comprises a third detector 121 which is arranged in the sample chamber 120. More specifically, the third detector 121 is arranged behind the object table 122, as seen from the electron source 101, along the first beam axis 709. The object table 122 and thus the object holder 114 can be rotated in such a way that the object 125 arranged on the object holder 114 can be irradiated by the primary electron beam. When the primary electron beam passes through the object 125, the electrons of the primary electron beam interact with the material of the object 125. The electrons passing through the object 125 are detected by the third detector 121.A radiation detector 500 is arranged on the sample chamber 120, with which interaction radiation, for example X-ray radiation and / or cathodoluminescent light, is detected. The radiation detector 500, the first detector 116, the second detector 117 and the chamber detector 119 are connected to a control unit 123 which has a monitor 124. The third detector 121 is also connected to the control unit 123. This is not shown for reasons of clarity. The control unit 123 processes detection signals generated by the first detector 116, the second detector 117, the chamber detector 119, the third detector 121 and / or the radiation detector 500 and displays these in the form of images or spectra on the monitor 124.The control unit 123 further comprises a database 126, in which data are stored and from which data are read out. In addition, the control unit 123 has a processor 127, into which a computer program product having a program code is loaded, which, when executed, controls the combination device 200 in such a way that the method according to the invention is carried out. This will be discussed in more detail below.The SEM 100 serves for generating a first particle beam, namely the primary electron beam already described further above, and has the first beam axis 709 already mentioned above. On the other hand, the combining device 200 is provided with an ion beam device 300 which is likewise arranged on the sample chamber 120. The ion beam apparatus 300 likewise has an optical axis which is provided with the reference symbol 710 in FIG. 1 and is also referred to below as the second beam axis.The SEM 100 is vertically disposed with respect to the sample chamber 120. By contrast, the ion beam apparatus 300 is arranged at an angle of approximately 0° to 90° with respect to the SEM 100. An arrangement of about 50° is shown, for example, in FIG. 1. The ion beam apparatus 300 has a second beam generator in the form of an ion beam generator 301. The ion beam generator 301 generates ions which form a second particle beam in the form of an ion beam. The ions are accelerated by means of an extraction electrode 302 which is at a predeterminable potential. The second particle beam then passes through an ion optics of the ion beam device 300, wherein the ion optics comprise a condenser lens 303 and a second objective lens 304. The second objective lens 304 finally generates an ion probe which is focused on the object 125 arranged on an object holder 114. The object holder 114 is arranged on an object table 122.Above the second objective lens 304 (i.e. in the direction of the ion beam generator 301), an adjustable or selectable aperture 306, a first electrode device 307 and a second electrode device 308 are arranged, wherein the first electrode device 307 and the second electrode device 308 are designed as grid electrodes. By means of the first electrode device 307 and the second electrode device 308, the second particle beam is scanned over the first surface of the object 125, wherein the first electrode device 307 acts in a first direction and the second electrode device 308 acts in a second direction, which is opposite to the first direction. The rastering thus takes place, for example, in an x-direction. The rastering in a y-direction perpendicular thereto is effected by further electrodes (not shown) rotated by 90° on the first electrode device 307 and on the second electrode device 308.The distances between the individual units of the combination device 200 shown in FIG. 1 are exaggerated in order to better show the individual units of the combination device 200.FIG. 2 shows a particle beam device in the form of a second embodiment of the particle beam device in the form of a combination device 202. The combination device 202 according to FIG. 2 is based on the combination device 200 according to FIG. 1. Reference is made to the statements made above, which also apply here. The combination device 202 has two particle beam columns. On the one hand, the combination device 202 is provided with the SEM 100, as already illustrated in FIG. 1. In addition, the combining device 202 is provided with the ion beam device 300 as already illustrated in FIG. 1. In addition, the second embodiment of the combination device 202 shown in FIG. 2 has a gas supply device 1000.The gas supply device 1000 serves for supplying a gaseous precursor to a specific position on the first surface of the object 125 and / or of the object holder 114. The gas supply device 1000 has a gas reservoir in the form of a precursor reservoir 1001. The precursor is, for example, accommodated in the precursor reservoir 1001 as a solid, gaseous or liquid substance. By heating and / or cooling the precursor, the equilibrium between the solid phase, the liquid phase and the gaseous phase is adjusted in such a way that the required vapor pressure is available.For example, phenanthrene is used as the precursor. Then, a layer of carbon or a carbon-containing layer is substantially deposited on the first surface of the object 125 and / or the object holder 114. Alternatively, for example, a metal-comprising precursor may be used to deposit a metal or a metal-containing layer on the first surface of the object 125 and / or the object holder 114. However, the deposits are not limited to carbon and / or metals. Rather, any substances can be deposited on the first surface of the object 125 and / or of the object holder 114, for example semiconductors, nonconductors or other compounds. Furthermore, it is also provided that the precursor, when interacting with one of the two particle beams, is used for ablating material of the object 125 and / or of the object holder 114.The gas supply device 1000 is provided with a feed line 1002. The feed line 1002 has a needle-shaped cannula 1003 in the direction of the object 125 and / or the object holder 114, which can be brought into the vicinity of the first surface of the object 125 and / or the object holder 114, for example at a distance of 10 μm to 1 mm from the first surface of the object 125 and / or the object holder 114. The cannula 1003 has a feed opening, the diameter of which is, for example, in the range from 10 μm to 1000 μm, in particular in the range from 100 μm to 600 μm. The feed line 1002 has a valve 1004 to regulate the flow of gaseous precursor into the feed line 1002. In other words, when the valve 1004 is opened, gaseous precursor is introduced from the precursor reservoir 1001 into the feed line 1002 and is conducted via the cannula 1003 to the first surface of the object 125 and / or of the object holder 114. Upon closing the valve 1004, the inflow of the gaseous precursor onto the first surface of the object 125 and / or of the object holder 114 is stopped.The gas supply device 1000 is further provided with an adjustment unit 1005, which enables an adjustment of the position of the cannula 1003 in all 3 spatial directions-namely an x-direction, a y-direction and a z-direction-as well as an adjustment of the orientation of the cannula 1003 by a rotation and / or a tilting. The gas supply device 1000 and thus also the adjustment unit 1005 are connected to the control unit 123 of the second embodiment of the combination device 202.In further embodiments, the precursor reservoir 1001 is not arranged directly on the gas supply device 1000. Rather, in these further embodiments, it is provided that the precursor reservoir 1001 is arranged, for example, on a wall of a space in which the second embodiment of the combination device 202 is located.The gas supply device 1000 has a temperature measuring unit 1006. As the temperature measurement unit 1006, for example, an infrared meter or a semiconductor temperature sensor is used. However, the invention is not restricted to the use of such temperature measuring units. Rather, any suitable temperature measuring unit which is suitable for the invention can be used as the temperature measuring unit. In particular, it can be provided that the temperature measuring unit 1006 is not arranged on the gas supply device 1000 itself, but is arranged, for example, at a distance from the gas supply device 1000.The gas supply device 1000 further includes a temperature adjustment unit 1007. The temperature adjustment unit 1007 is, for example, a heater, particularly a commercially available infrared heater. Alternatively, the temperature adjustment unit 1007 is designed as a heating and / or cooling device, which has, for example, a heating wire and / or a Peltier element. However, the invention is not limited to the use of such a temperature adjustment unit 1007. Rather, any suitable temperature adjustment unit may be used for the invention.The object 125 which is arranged on the object holder 114 of the combination device 200 and on the object holder 114 of the combination device 202 will now be discussed below. FIG. 2A schematically illustrates the object 125 and enlarged compared to the representations in FIGS. 1 and 2. The object 125 has the first surface 150 and a second surface 152. At at least one predefinable first position 151 on first surface 150 of object 125, first beam axis 709 strikes first surface 150 of object 125. The second beam axis 710 impinges on the first surface 150 of the object 125 at at least one predeterminable second position (not shown) on the first surface 150 of the object 125.The at least one predeterminable first position 151 on the first surface 150 and the at least one predeterminable second position on the first surface 150 can be identical. Alternatively, the at least one predeterminable second position on the first surface 150 of the object 125 can deviate from the at least one predeterminable first position 151 on the first surface 150 of the object 125. For example, the at least one predefinable second position on the first surface 150 of the object 125 may have a distance of at most 500 nm, in particular of at most 250 nm, furthermore in particular of at most 100 nm, from the at least one predefinable first position 151 on the first surface 150 of the object 125. For example, the distance between the at least one predefinable second position on the first surface 150 of the object 125 and the at least one predefinable first position 151 on the first surface 150 of the object 125 can be caused by a difference in the angles at which the first beam axis 709 and the second beam axis 710 meet the first surface 150 of the object 125.A thickness 154 of the object 125 is given by a length of a connecting line, wherein the connecting line connects the at least one predeterminable first position 151 on the first surface 150 of the object 125 to a second position 153 on the second surface 152 of the object 125. For example, the thickness 154 is given by the smallest possible distance between the predefinable first position 151 on the first surface 150 of the object 125 and the second position 153 on the second surface 152 of the object 125. It should be noted that the thickness 154 is not fundamentally given by the smallest possible distance between the predeterminable first position 151 on the first surface 150 of the object 125 and the arbitrary second position 153 on the second surface 152 of the object 125. Rather, the second position 153 on the second surface 152 of the object 125 can be produced by a relative positioning with respect to the predeterminable first position 151 on the first surface 150 of the object 125. For example, the second position 153 on the second surface 152 of the object 125 results from the predefinable first position 151 on the first surface 150 of the object 125 in such a way that the second position 153 on the second surface 152 of the object 125 lies at an intersection point of an auxiliary line with the second surface 152 of the object 125. In this case, the auxiliary line is formed, for example, by the fact that it runs perpendicularly to an auxiliary plane through the predeterminable first position 151 on the first surface 150 of the object 125, wherein the auxiliary plane is given by the first surface 150 of the object 125. However, the auxiliary plane can also be formed, for example, by a surface which is to be achieved by the processing process of the object 125. In other words, the thickness 154 is given by a material thickness of the object 125 at the at least one predeterminable first position 151 on the first surface 150 of the object 125.An inner position 155 denotes, for example, a position which is arranged within the object 125. In particular, this inner position 155 is arranged close to the at least one predeterminable first position 151, so that the primary electron beam first passes this one predeterminable first position 151 and then passes the inner position 155.It should be noted that the invention is not limited to the object 125 described herein. Rather, the invention may include any object 125 suitable for the invention.The object table 122 of the combination device 200 and the object table 122 of the further embodiment of the combination device 202 will now be discussed below. The object table 122 is designed as an object table with movement units, which is schematically illustrated in FIGS. 3 and 4. It should be noted that the invention is not limited to the stage 122 described herein. Rather, the invention may include any movable stage suitable for the invention.The object holder 114 with the object 125 is arranged on the object table 122. The object table 122 has movement units which ensure a movement of the object holder 114 in such a way that a region of interest on the object 125 can be analyzed, processed and / or imaged by means of a particle beam. The movement units are schematically illustrated in FIGS. 3 and 4 and are explained below.The object table 122 has a first movement unit 600 on a housing 601 of the sample chamber 120, in which the object table 122 is arranged. The first movement unit 600 enables the object holder 114 to be moved along the z-axis (third table axis). Furthermore, a second movement unit 602 is provided. The second movement unit 602 allows the object holder 114 to rotate about a first table rotation axis 603, which is also referred to as a tilt axis. This second movement unit 602 serves for tilting the object 125 about the first table rotation axis 603.On the second movement unit 602, a third movement unit 604 is again arranged, which is designed as a guide for a slide and ensures that the object holder 114 is movable in the x direction (first table axis). The above-mentioned carriage is in turn a further movement unit, namely a fourth movement unit 605. The fourth moving unit 605 is configured such that the object holder 114 is movable in the y direction (second table axis). For this purpose, the fourth movement unit 605 has a guide in which a further carriage is guided, on which a holder 609 with the object holder 114 and the object 125 is in turn arranged.The holder 609 is in turn formed with a fifth movement unit 606, which makes it possible to rotate the holder 609 about a second table rotation axis 607. The second table rotation axis 607 is oriented perpendicular to the first table rotation axis 603.Due to the above-described arrangement, the object table 122 of the embodiment discussed here has the following kinematic chain: first movement unit 600 (movement along the z-axis) second movement unit 602 (rotation about the first table rotation axis 603) third movement unit 604 (movement along the x-axis) fourth movement unit 605 (movement along the y-axis) fifth movement unit 606 (rotation about the second table rotation axis 607).In a further embodiment (not shown), it is provided to arrange further movement units on the object table 122, so that movements along further translatory axes and / or about further axes of rotation are made possible.As can be seen from FIG. 4, each of the aforementioned movement units is connected to a stepping motor. Thus, the first moving unit 600 is connected to a first stepping motor M 1 and is driven due to a driving force provided by the first stepping motor M 1. The second moving unit 602 is connected to a second stepping motor M 2 that drives the second moving unit 602. The third movement unit 604 is in turn connected to a third stepping motor M 3. The third stepping motor M 3 provides a driving force for driving the third moving unit 604. The fourth moving unit 605 is connected to a fourth stepping motor M 4, wherein the fourth stepping motor M 4 drives the fourth moving unit 605. Further, the fifth moving unit 606 is connected to a fifth stepping motor M 5. The fifth stepping motor M 5 provides a driving force that drives the fifth moving unit 606. The aforementioned stepping motors M 1 to M 5 are controlled by a motor control unit 608 (see FIG. 4 ).Embodiments of the method according to the invention are explained in more detail below with respect to the combination device 202.FIG. 5 shows a schematic illustration of a sequence of a first embodiment of the method according to the invention. The method according to the invention serves for the operation of the combination device 202 for determining a thickness 154 of the object 125, wherein, inter alia, in the method according to the invention, adjustment and / or determination of control parameter values of at least one control parameter of the combination device 202 and processing of the object 125 by means of the primary electron beam and / or the ion beam take place.In a method step S 1 of the method according to the invention, a first particle beam, the primary electron beam of the combination device 202, is first guided to at least one predeterminable first position 151 on a first surface 150 of the object 125 using at least one guide unit of the combination device 202.It is noted that the first surface 150 of the object 125 may be formed by any surface of the object 125.The aforementioned guide unit (a first guide unit) is understood to mean any unit for guiding the primary electron beam onto the object 125, but also any units for shaping the primary electron beam which is then guided to the object 125. The first guide unit is designed, for example, as the first objective lens 107 for focusing the primary electron beam onto the object 125, as an electrostatic and / or magnetic unit for beam shaping or for beam guiding the primary electron beam, for example in the form of the coil 111 or the raster device 115, as a stigmator, as a condenser lens 105, 106 and / or as a mechanically adjustable aperture unit in the form of the first aperture unit 108 and the second aperture unit 109, with which the primary electron beam is bounded. In particular, the beam column in the form of the beam guide tube 104 of the combination device 202 is also understood as a first guide unit.In a further method step S 2 of the method according to the invention, interaction particles and / or interaction radiation are / is detected with a detector, for example the first detector 116 and / or the second detector 117 and / or the chamber detector 119 and / or the third detector 121 and / or the radiation detector 500 of the combination device 202, wherein the interaction particles and / or the interaction radiation result / emerge from an interaction of the primary electron beam with the object 125 when the primary electron beam impinges on the at least one predeterminable first position 151 on the first surface 150 of the object 125. As already explained above, the interaction particles are embodied, for example, as secondary particles, in particular as secondary electrons, and / or as backscatter particles, in particular as backscatter electrons. The interaction radiation is in particular X-ray radiation and / or cathodoluminescent light.In a method step S 3 of the method according to the invention, a detection signal is generated based on the detected interaction particles and / or the detected interaction radiation using the detector, for example the first detector 116 and / or the second detector 117 and / or the chamber detector 119 and / or the third detector 121 and / or the radiation detector 500 of the combination device 202. The detection signal can have a dependence, for example, on a number of detected interaction particles, a dependence, for example, on an intensity of the detected interaction radiation, a dependence, for example, on an energy of the detected interaction particles and / or of the detected interaction radiation, a dependence, for example, on a spatial distribution of the detected interaction particles and / or of the detected interaction radiation, a dependence, for example, on a spectral distribution of the detected interaction radiation, a dependence, for example, on an energy distribution of the detected interaction particles and / or a dependence, for example, on phase information of the detected interaction radiation.In a further method step S 4 of the method according to the invention, a thickness 154 of the object 125 is determined on the basis of the generated detection signal at the at least one predefinable first position 151 on the first surface 150 of the object 125. For determining the thickness 154, the control unit 123 of the combination device 202 is used. With regard to the thickness, reference is made to the statements made further above, which also apply here.The control unit 123 of the combination device 202 is used, in particular, for the activation and / or setting of at least one functional unit of the combination device 202. A functional unit is understood above and also below as a structural unit of the combination device 202, which can be adjusted in any manner. For example, the position of the functional unit can be adjusted in the combination device 202. In particular, the functional unit can be designed as the movably designed object table 122. Additionally or alternatively, it is provided to set an electrostatic and / or magnetic configuration of the functional unit, for example the condenser lens 303 and / or the second objective lens 304 and / or the adjustable or selectable aperture 306 and / or the first electrode device 307 and / or the second electrode device 308. The invention is not limited to the aforementioned possibilities of setting. Rather, the functional unit can be set in any manner suitable for the invention. A second guide unit is designed in particular as a functional unit.In a method step S 5 of the method according to the invention, a deviation of the determined thickness 154 of the object 125 from a predefinable thickness value of the object 125 at the at least one predefinable first position 151 on the first surface 150 of the object 125 is determined. The deviation of the determined thickness 154 of the object 125 from the predefinable thickness value is understood to mean a difference between the determined thickness 154 of the object 125 and the predefinable thickness value. In other words, the deviation of the specific thickness 154 of the object 125 from the predefinable thickness value denotes a distance which results mathematically from the difference between the specific thickness 154 and the predefinable thickness value. Again in other words, object 125 having thickness 154 of the predefinable thickness value may be achieved by either removing or applying material for achieving the predefinable thickness value in the strength of the distance at the at least one predefinable first position 151 on first surface 150 of object 125.In other words, the deviation is determined at this at least one predefinable first position 151 on the first surface 150 of the object 125. The deviation can be used, for example, to determine whether further processing is being carried out, for example if the amount of the deviation exceeds a predefinable value. Whether material at the at least one predeterminable second position on the first surface 150 of the object 125 has to be ablated or deposited for further processing is determined by the sign of the above-mentioned difference between the determined thickness 154 and the predeterminable thickness value.The predefinable thickness value is selected, for example, from a first range of 1 nm to 100 nm, preferably selected from a second range between 1 nm and 80 nm, further preferably selected from a third range between 1 nm and 50 nm, the range boundaries being included in the aforementioned ranges.In a further method step S 6 of the method according to the invention, at least one control parameter value of at least one control parameter is adapted and / or determined using the control unit 123 for controlling one of the aforementioned functional units of the combination device 202 as a function of the determined deviation, wherein the functional unit influences at least one predefinable property of the combination device 202 relating to the second particle beam in the form of the ion beam. For example, in this method step, the control parameter value is set to a first value. For example, the control parameter may be configured as a current flowing through a coil of the second objective lens 304 of the combination device 202 such that the ions of the ion beam are focused or defocusing by the coil. Furthermore, the control parameter can be designed, for example, as a voltage for accelerating and / or decelerating the ions of the ion beam. In addition, the control parameter can be embodied, for example, as a voltage of the first electrode device 307 and / or of the second electrode device 308 for deflecting the ions of the ion beam. Furthermore, the control parameter can be designed, for example, as a signal for controlling the movably designed object table 122. The invention is not limited to the aforementioned examples of the control parameter. Rather, in the invention, any control parameter which is suitable for the invention can be used for controlling the at least one above-mentioned functional unit of the combination device 202.If the amount of the deviation determined in method step S 5 reveals, for example, that further processing takes place and if the difference between the determined thickness 154 and the predefinable thickness value is greater than zero-that is to say if the determined thickness 154 is greater than the predefinable thickness value-material at the at least one predefinable second position on the first surface 150 of the object 125 is to be ablated. If the amount of the deviation determined in method step S 5 reveals, for example, that further processing takes place and the difference between the determined thickness 154 and the predefinable thickness value is less than zero-that is to say the determined thickness 154 is less than the predefinable thickness value-material is to be applied at the at least one predefinable second position on the first surface 150 of the object 125. According to the desired ablation / plot, the control parameter value of the at least one control parameter is adjusted. The determination of the at least one control parameter value is understood to mean, for example, an input of a value into the control unit of the particle beam device by a user of the particle beam device.In a method step S 7 of the method according to the invention, the functional unit is controlled with the at least one adapted control parameter value of the control parameter and / or with the at least one determined control parameter value of the control parameter using the control unit 123, so that the at least one predeterminable property of the combination device 202 relating to the ion beam is influenced by the functional unit. The functional unit can be embodied, for example, as the condenser lens 303 and / or the second objective lens 304 and / or the adjustable or selectable aperture 306 and / or the first electrode device 307 and / or the second electrode device 308.In a further method step S 8 of the method according to the invention, the ion beam of the combination device 202 is guided to the at least one predeterminable second position on the first surface 150 of the object 125 using the second guide unit of the combination device 202, and the object 125 is processed at the at least one predeterminable second position on the first surface 150 of the object 125 with the second particle beam in the form of the ion beam. The object 125 can be processed with the ion beam, for example, by material being either ablated or deposited at the at least one predeterminable second position on the first surface 150 of the object 125.Application of material to the object 125 is effected with the combination device 202, for example using the supply of a gas. By means of the gas supply device 1000, the gaseous precursor substance-the so-called precursor-can be introduced into the sample chamber 120. For this purpose, for example, the valve 1004 is opened, so that the precursor is conducted from the gas reservoir 1001 through the feed line 1002 into the cannula 1003, which can be arranged at a distance of a few μm at the at least one predeterminable second position on the first surface 150 of the object 125. As a result, the gaseous precursor substance can be guided as accurately as possible and in a high concentration to the at least one predeterminable second position. By interaction of the ion beam with the gaseous precursor substance, a layer of substance is deposited on the surface 150 of the object 125. For example, it is known to introduce gaseous phenanthrene as a gaseous precursor into the sample chamber through the gas supply device 1000. Then, a layer of carbon or a layer containing carbon is substantially deposited on the surface 150 of the object 125. It is also known to use a gaseous precursor substance comprising metal to deposit a metal or a metal-containing layer on the surface 150 of the object 125. However, the deposits are not limited to carbon and / or metals. Rather, any substances can be deposited on the surface of the object 125, for example semiconductors, nonconductors or other compounds.Furthermore, the gaseous precursor substance can be used for removing material of the object 125 when interacting with a particle beam. Likewise, however, only the primary electron beam and / or the ion beam can also be used for removing material of the object 125, without the additional use of the gaseous precursor substance. For this purpose, for example, the first guide unit for guiding the primary electron beam and / or the second guide unit for guiding the ion beam is operated using the control unit 123 and / or the functional unit in such a way that the desired removal of material is achieved. With regard to the first guide unit, the second guide unit, the control unit 123 and the functional unit, reference is made to the explanations given above, which also apply here.The application of material to and / or the removal of material from the object 125 is used, for example, to achieve a predeterminable thickness 154 of the object 125.The abovementioned method steps which are composed of the method are also referred to below in their entirety as basic methods.As stated above and below, method steps can be carried out in parallel. FIG. 5A shows the parallel execution of method steps S 7 and S 8 following method step S 6. With regard to the method steps, the statements made further above and below apply.FIG. 6 shows a schematic illustration of a sequence of a second embodiment of the method according to the invention. The second embodiment of the method according to the invention according to FIG. 6 is based on the embodiment of the method according to the invention according to FIG. 5. In contrast to the embodiment of the method according to the invention according to FIG. 5, the second embodiment of the method according to the invention according to FIG. 6 has the repeated execution of method steps. For example, the second embodiment of the method according to the invention then comprises the following method steps:First, according to the method of the present invention, as shown in FIG. 5, process steps S1 to S8 are performed.In a method step S 11 of the method according to the invention according to FIG. 6, the primary electron beam of the combination device 202 is guided again to the at least one predeterminable first position 151 on the first surface 150 of the object 125 using the first guide unit of the combination device 202. The first guide unit is designed, for example, as the first objective lens 107 for focusing the primary electron beam onto the object 125, as the electrostatic and / or magnetic unit for beam shaping or for beam guiding the primary electron beam, for example in the form of the coil 111 or the raster device 115, as a stigmator, as a condenser lens 105, 106 and / or as a mechanically adjustable aperture unit in the form of the first aperture unit 108 and the second aperture unit 109, with which the primary electron beam is bounded. In particular, the beam column in the form of the beam guide tube 104 of the combination device 202 is also understood as a first guide unit.In a further method step S 21 of the method according to the invention according to FIG. 6, further interaction particles and / or a further interaction radiation are / is detected with the detector, for example the first detector 116 and / or the second detector 117 and / or the chamber detector 119 and / or the third detector 121 and / or the radiation detector 500 of the combination device 202, wherein the interaction particles and / or the interaction radiation result / result from an interaction of the primary electron beam with the object 125 when the primary electron beam impinges on the at least one predeterminable first position 151 on the first surface 150 of the object 125. As already explained above, the interaction particles are embodied, for example, as secondary particles, in particular as secondary electrons, and / or as backscatter particles, in particular as backscatter electrons. The interaction radiation is in particular X-ray radiation and / or cathodoluminescent light.In a method step S 31 of the method according to the invention according to FIG. 6, a further detection signal is generated based on the detected further interaction particles and / or the detected further interaction radiation using the detector, for example the first detector 116 and / or the second detector 117 and / or the chamber detector 119 and / or the third detector 121 and / or the radiation detector 500 of the combination device 202.In a further method step S 41 of the method according to the invention according to FIG. 6, a further thickness 154 of the object 125 is determined on the basis of the generated further detection signal at the at least one predeterminable first position 151 on the first surface 150 of the object 125 using the control unit 123 of the combination device 202.In a method step S 51 of the method according to the invention according to FIG. 6, a further deviation of the determined further thickness 154 of the object 125 from a further predefinable thickness value of the object 125 at the at least one predefinable first position 151 on the first surface 150 of the object 125 is determined.In a further method step S 61 of the method according to the invention according to FIG. 6, at least one further control parameter value of at least one further control parameter is adapted and / or determined using the control unit 123 for controlling the functional unit of the combination device 202 as a function of the determined further deviation. For example, in this method step, the control parameter value that was set to the first value in method step S 6 is set to a second value in the course of method step S 61, wherein the first value and the second value may be different. The explanations made in the course of the description of method step S 6 regarding the control parameter also apply to the further control parameter: for example, the further control parameter can be formed as a current which flows through the coil of the second objective lens 304 of the combination device 202, such that the ions of the ion beam are focused or defocusing by the coil. Furthermore, the control parameter can be designed, for example, as the voltage for accelerating and / or decelerating the ions of the ion beam. In addition, the further control parameter can be embodied, for example, as the voltage of the first electrode device 307 and / or of the second electrode device 308 for deflecting the ions of the ion beam. Furthermore, the further control parameter can be designed, for example, as the signal for controlling the movably designed object table 122. The invention is not limited to the aforementioned examples of the control parameter and / or the further control parameter. Rather, in the invention, any control parameter which is suitable for the invention can be used for controlling the at least one above-mentioned functional unit of the combination device 202.In a method step S 71 of the method according to the invention according to FIG. 6, the functional unit is controlled using the control unit 123 with the at least one adapted further control parameter value (which has now been adapted to the second value, for example) of the further control parameter and / or with the at least one determined further control parameter value (which has now been set to the second value, for example), such that the at least one predeterminable property of the combination device 202 relating to the ion beam is influenced by the functional unit. The explanations given further above regarding the functional unit also apply here: a functional unit is understood above and also below as meaning the structural unit of the combination device 202, which can be set in any way. For example, the position of the functional unit can be adjusted in the combination device 202. In particular, the functional unit can be designed as the movably designed object table 122. Additionally or alternatively, it is provided to set an electrostatic and / or magnetic configuration of the functional unit, for example the condenser lens 303 and / or the second objective lens 304 and / or the adjustable or selectable aperture 306 and / or the first electrode device 307 and / or the second electrode device 308. The invention is not limited to the aforementioned possibilities of setting. Rather, the functional unit can be set in any manner suitable for the invention. The second guide unit is designed in particular as a functional unit.In a further method step S 81 of the method according to the invention, the ion beam of the combination device 202 is guided to the at least one predeterminable second position on the first surface 150 of the object 125 using the second guide unit of the combination device 202, and the object 125 is processed with the ion beam at the at least one predeterminable second position on the first surface 150 of the object 125. With regard to the processing of the object 125 at the at least one predeterminable second position on the first surface 150 of the object 125 with the second particle beam in the form of the ion beam, reference is made to the explanations given further above, which explain the processing of the object 125 with the ion beam.In the method according to the invention according to FIG. 6, in particular the further predefinable thickness value is different from the predefinable thickness value. In the second embodiment explained above, the basic method as described above is thus carried out at least one further time, wherein the predefinable thickness value is replaced by the further predefinable thickness value. In this respect, it is provided, for example, that the thickness 154 of the object 125 gradually approaches a target thickness in the above manner. The second embodiment according to FIG. 6 explained above therefore comprises an iterative method.The target thickness is selected, for example, from the first range from 1 nm to 100 nm, preferably selected from the second range between 1 nm and 80 nm, more preferably selected from the third range between 1 nm and 50 nm, the range boundaries being included in the aforementioned ranges.The method according to the invention according to FIG. 6 is not limited to the above-described repetition of all method steps of the basic method twice. Rather, in a further embodiment of the method according to the invention, an arbitrarily frequent repetition of the basic method with adapted further thickness values is provided. A number of repetitions can depend, for example, on the thickness 154 of the object 125, the target thickness and / or the processing of the object 125 with the ion beam. In particular, the basic method may be repeated until the thickness 154 of the object 125 corresponds to the target thickness.In particular, by repeating the basic method with different predefinable thickness values, deviations of large amount between the predefinable thickness value and the specific thickness 154 of the object 125 can be avoided. This makes possible in particular a gentle processing of the object 125 since an amount of the material which is ablated or applied in one pass of the method according to the invention according to FIG. 6 is limited and in particular cannot exceed a predeterminable maximum value.FIG. 7 shows a schematic illustration of a sequence of a third embodiment of the method according to the invention. The third embodiment of the method according to the invention according to FIG. 7 is based on the embodiment of the method according to the invention according to FIG. 5. In contrast to the embodiment of the method according to the invention according to FIG. 5, the third embodiment of the method according to the invention according to FIG. 7 has a further method step S 62, which comprises calculating the control parameter value with data and / or directly loading the control parameter value from the database 126 as control parameter into the control unit 123. The explanations given above and below for the control parameter value also apply equally to the further control parameter value. Likewise, the explanations given above and below apply equally to the control parameter also to the further control parameter. In particular, method step S 62 can be carried out after method step S 5. For example, first of all, according to the method according to the invention, as shown in FIG. 5, method steps S 1 to S 5 are carried out.This is followed, for example, by the further method step S 62 before the method steps S 6 to S 8 are carried out.The data for calculating the control parameter value can be stored data on a memory unit. The storage unit is designed, for example, as a data carrier which has, for example, the database 126. However, the data can also result from process parameters and / or measurement parameters of the method by determination and / or calculation. The database 126 serves for storing the determined and / or calculated data, for example control parameter values.FIG. 7A shows a schematic illustration of a sequence of a fourth embodiment of the method according to the invention. The fourth embodiment of the method according to the invention according to FIG. 7A is based on the embodiment of the method according to the invention according to FIG. 6, and therefore reference is first made to the explanations given above, which also apply here. In contrast to the embodiment of the method according to the invention according to FIG. 6, the fourth embodiment of the method according to the invention according to FIG. 7A has the further method step S 62. The explanations made with respect to FIG. 7 apply here with respect to method steps S 62. FIG. 7A illustrates the execution of method step S 62 after method step S 51 according to FIG. 6.FIG. 8 shows a schematic illustration of a sequence of a fifth embodiment of the method according to the invention. The fifth embodiment of the method according to the invention according to FIG. 8 is based on the embodiment of the method according to the invention according to FIG. 5. In contrast to the embodiment of the method according to the invention according to FIG. 5, the fifth embodiment of the method according to the invention according to FIG. 8 has further method steps S 52, S 52Q, S 52A and S 52B. In method step S 52, it is determined whether the determined deviation at the at least one predefinable first position 151 on first surface 150 of object 125 is greater in absolute value than a predefinable threshold value 400. If the determined deviation at the at least one predefinable first position 151 on the first surface 150 of the object 125 is greater in terms of amount than the predefinable threshold value 400, further processing at the at least one predefinable second position on the first surface 150 of the object 125 follows. In method step 52Q, the sign of the difference of the determined thickness 154 of the object 125 from the predefinable thickness value of the object 125 at the at least one predefinable first position 151 on the first surface 150 of the object 125 is determined. Method step S 52A follows if the above-mentioned difference is greater than zero, i.e. has a positive sign. In this method step, material of the object 125 is ablated at the at least one predeterminable second position on the first surface 150 of the object 125 using the combination device 202. If the difference at the at least one predefinable first position 151 on the first surface 150 of the object 125 is less than zero, i.e., the difference has a negative sign, method step S 52B follows. In this method step, material is deposited (i.e. deposited) at the at least one predeterminable second position on the first surface 150 of the object 125 using the combination device 202.The threshold value 400 can be predefined, for example by the user inputting the threshold value 400 and / or by retrieving the threshold value 400 from a database. The aforementioned database corresponds, for example, to database 126 already mentioned further above. Alternatively, the aforementioned database is different from the aforementioned database 126. The threshold value may also be obtained from a calculation, for example based on process parameters and / or measurement parameters.The removal of material using the combination device 202 can be carried out, for example, by machining the object 125 with the ion beam. Additionally or alternatively, as described above, a gaseous precursor substance can be used for ablating material of the object 125 with the electron beam and / or the ion beam.In particular, as described above, depositing material using the combination device 202 may be performed by using a gaseous precursor substance together with the electron beam and / or the ion beam to process the object 125. Depositing is basically the application of material to the object 125.In a yet further embodiment of the method according to the invention, it is additionally or alternatively provided that the threshold value 400 is stored in a further database and / or loaded from the further database into the control unit 123. The further database can be designed differently from the database 126 already mentioned further above. Alternatively, the further database can correspond, for example, to the database 126 already mentioned further above.In particular, method step S 52 can be carried out after method step S 5 according to FIG. 5. For example, first of all, according to the method according to the invention, as shown in FIG. 5, method steps S 1 to S 5 are carried out. This is followed, for example, by the further method step S 52 before the method steps S 52Q, S 52A and / or S 52B can follow. Method steps S 6 to S 8 can then be carried out.FIG. 8A shows a schematic illustration of a sequence of a sixth embodiment of the method according to the invention. The sixth embodiment of the method according to the invention according to FIG. 8A is based on the embodiment of the method according to the invention according to FIG. 6, and therefore reference is first made to the explanations given above, which also apply here. In contrast to the embodiment of the method according to the invention according to FIG. 6, the sixth embodiment of the method according to the invention according to FIG. 8A has the further method steps S 52, S 52Q, S 52A and S 52B. The explanations made with respect to FIG. 8 apply here with respect to the method steps S 52, S 52Q, S 52A and S 52B. FIG. 8A illustrates the execution of method step S 52 following method step S 51 according to FIG. 6. As listed in the embodiments made with reference to FIG. 8, the method steps S 52Q, S 52A and / or S 52B can follow this. Subsequently, the method step S 61 may be carried out.FIG. 9 shows a schematic illustration of a sequence of a seventh embodiment of the method according to the invention. The seventh embodiment of the method according to the invention according to FIG. 9 is based on the embodiment of the method according to the invention according to FIG. 5. In contrast to the embodiment of the method according to the invention according to FIG. 5, the seventh embodiment of the method according to the invention according to FIG. 9 has further method steps.For example, the method according to the invention according to the seventh embodiment then comprises the following method steps:First, according to the method of the present invention, as shown in FIG. 5, process steps S1 to S8 are performed.As a next method step S 13 of the method according to the invention according to FIG. 9, after method step S 8, the primary electron beam of the combination device 202 is guided to at least one further predefinable first position 151 on the first surface 150 of the object 125 using the first guide unit of the combination device 202. The first guide unit is designed, for example, as the first objective lens 107 for focusing the primary electron beam onto the object 125, as an electrostatic and / or magnetic unit for beam shaping or for beam guiding the primary electron beam, for example in the form of the coil 111 or the raster device 115, as a stigmator, as a condenser lens 105, 106 and / or as a mechanically adjustable aperture unit in the form of the first aperture unit 108 and the second aperture unit 109, with which the primary electron beam is bounded. In particular, the beam column in the form of the beam guide tube 104 of the combination device 202 is also understood as a first guide unit.In a further method step S 23 of the method according to the invention according to FIG. 9, further interaction particles and / or a further interaction radiation are / is in turn detected with the detector, for example the first detector 116 and / or the second detector 117 and / or the chamber detector 119 and / or the third detector 121 and / or the radiation detector 500 of the combination device 202, wherein the interaction particles and / or the interaction radiation emerge / emerge from the interaction of the primary electron beam with the object 125 when the primary electron beam impinges on the at least one further predefinable first position 151 on the first surface 150 of the object 125. As already explained above, the interaction particles are embodied, for example, as secondary particles, in particular as secondary electrons, and / or as backscatter particles, in particular as backscatter electrons. The interaction radiation is in particular X-ray radiation and / or cathodoluminescent light.In a method step S 33 of the method according to the invention according to FIG. 9, a further detection signal is generated based on the detected further interaction particles and / or the detected further interaction radiation using the detector, for example the first detector 116 and / or the second detector 117 and / or the chamber detector 119 and / or the third detector 121 and / or the radiation detector 500 of the combination device 202.In a further method step S 43 of the method according to the invention according to FIG. 9, a yet further thickness 154 of the object 125 is determined on the basis of the generated yet further detection signal at the at least one further predefinable first position 151 on the first surface 150 of the object 125 using the control unit 123 of the combination device 202.In a method step S 53 of the method according to the invention according to FIG. 9, a further deviation of the determined further thickness 154 of the object 125 from a further predefinable thickness value of the object 125 at the at least one further predefinable first position 151 on the first surface 150 of the object 125 is determined.In a further method step S 63 of the method according to the invention according to FIG. 9, the at least one further control parameter value of the at least one further control parameter is adapted and / or determined using the control unit 123 for controlling the functional unit of the combination device 202 as a function of the determined further deviation. For example, in this method step, the control parameter value that was set to a third value in method step S 6 is set to a fourth value in the course of method step S 63, wherein the third value and the fourth value may be different. The explanations made in the course of the description of method step S 6 regarding the control parameter also apply to the further control parameter: for example, the further control parameter can be formed as the current which flows through the coil of the second objective lens 304 of the combination device 202, such that the ions of the ion beam are focused or defocusing by the coil. Furthermore, the further control parameter can be designed, for example, as the voltage for accelerating and / or decelerating the ions of the ion beam. In addition, the further control parameter can be embodied, for example, as the voltage of the first electrode device 307 and / or of the second electrode device 308 for deflecting the ions of the ion beam. Furthermore, the further control parameter can be designed, for example, as the signal for controlling the movably designed object table 122. The invention is not limited to the aforementioned examples of the control parameter. Rather, in the invention, any control parameter which is suitable for the invention can be used for controlling the at least one above-mentioned functional unit of the combination device 202.In method step S 73 of the method according to the invention according to FIG. 9, the functional unit is controlled with the at least one adapted further control parameter value of the further control parameter and / or with the at least one determined further control parameter value of the further control parameter using the control unit 123, so that the at least one predeterminable property of the combination device 202 relating to the ion beam is influenced by the functional unit. The explanations given further above regarding the functional unit also apply here: a functional unit is understood above and also below as meaning the structural unit of the combination device 202, which can be set in any way. For example, the position of the functional unit can be adjusted in the combination device 202. In particular, the functional unit can be designed as the movably designed object table 122. Additionally or alternatively, it is provided to set an electrostatic and / or magnetic configuration of the functional unit, for example the condenser lens 303 and / or the second objective lens 304 and / or the adjustable or selectable aperture 306 and / or the first electrode device 307 and / or the second electrode device 308.The invention is not limited to the aforementioned possibilities of setting. Rather, the functional unit can be set in any manner suitable for the invention. The second guide unit is designed in particular as a functional unit.In a further method step S 83 of the method according to the invention according to FIG. 9, the second particle beam of the combination device 202 is guided to at least one further predefinable second position on the first surface 150 of the object 125 using the second guide unit of the combination device 202, and the object 125 is processed with the ion beam at the at least one further predefinable second position on the first surface 150 of the object 125. With regard to the processing of the object 125 at the at least one further predefinable second position on the first surface 150 of the object 125 with the second particle beam in the form of the ion beam, reference is made to the explanations given above, which explain the processing of the object 125 with the ion beam. The at least one further predefinable first position 151 on the first surface 150 of the object 125 and the at least one further predefinable second position on the first surface 150 of the object 125 may be different or identical.The thickness value, which in turn can be further predetermined, can correspond, for example, to the predetermined thickness value. Alternatively, according to an embodiment of the method according to the invention mentioned above, the further predefinable thickness value can in turn be different from the predefinable thickness value.The again further thickness value is selected, for example, from the first range from 1 nm to 100 nm, preferably selected from the second range between 1 nm and 80 nm, further preferably selected from the third range between 1 nm and 50 nm, wherein the range boundaries are included in the aforementioned ranges.FIG. 10 shows a schematic illustration of a sequence of an eighth embodiment of the method according to the invention. The eighth embodiment of the method according to the invention according to FIG. 10 is based on the embodiment of the method according to the invention according to FIG. 5. In contrast to the embodiment of the method according to the invention according to FIG. 5, the eighth embodiment of the method according to the invention according to FIG. 10 has the multiple machining of the identical position. In contrast to the above-mentioned second embodiment of the method according to the invention according to FIG. 6, this eighth embodiment cannot have, for example, any adaptation of the thickness value.In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the predefinable thickness value is identical for all first positions on the first surface 150 of the object 125. In other words, the object 125 produced by means of the method according to the invention has a uniform thickness 154. In still other words, the object 125 produced by means of the method according to the invention is produced with plane-parallel surfaces. In other words, the thickness 154 of the object 125, which is produced by means of the method according to the invention, at the at least one predefinable first position 151 on the first surface 150 of the object 125 corresponds to the thickness 154 of the object 125 at the at least one further predefinable first position on the first surface 150 of the object 125.FIG. 11 shows a schematic illustration of a sequence of a ninth embodiment of the method according to the invention. The ninth embodiment of the method according to the invention according to FIG. 11 is based on the embodiment of the method according to the invention according to FIG. 5 and FIG. 6, and therefore reference is first made to the explanations given above, which also apply here. In contrast to the embodiment of the method according to the invention according to FIG. 5, the ninth embodiment of the method according to the invention according to FIG. 11 has the additional method steps S 11, S 21, S 31 and S 41, which are also referred to as measurement step and are known from FIG. 6. For example, the thickness 154 may be determined again using the measurement step after the object 125 is processed.For example, first of all, according to the method according to the invention, as shown in FIG. 5, method steps S 1 to S 8 are carried out.The measurement step is then composed of a plurality of method steps.In a method step S 11 of the method according to the invention according to FIG. 11, the primary electron beam of the combination device 202 is guided again to the at least one predeterminable first position on the first surface of the object 125 using the first guide unit. The first guide unit is designed, for example, as the first objective lens 107 for focusing the primary electron beam onto the object 125, as an electrostatic and / or magnetic unit for beam shaping or for beam guiding the primary electron beam, for example in the form of the coil 111 or the raster device 115, as a stigmator, as a condenser lens 105, 106 and / or as a mechanically adjustable aperture unit in the form of the first aperture unit 108 and the second aperture unit 109, with which the primary electron beam is bounded. In particular, the beam column in the form of the beam guide tube 104 of the combination device 202 is also understood as a first guide unit.In a further method step S 21 of the method according to the invention according to FIG. 11, the further interaction particles and / or the further interaction radiation are / are detected with the detector, for example the first detector 116 and / or the second detector 117 and / or the chamber detector 119 and / or the third detector 121 and / or the radiation detector 500 of the combination device 202, wherein the further interaction particles and / or the further interaction radiation result / result from the interaction of the primary electron beam with the object 125 when the primary electron beam impinges on the at least one predeterminable first position 151 on the first surface 150 of the object 125.The further interaction particles are embodied, for example, as secondary particles, in particular as secondary electrons, and / or as backscatter particles, in particular as backscatter electrons. The further interaction radiation is in particular X-ray radiation and / or cathodoluminescent light.In method step S 31 of the method according to the invention according to FIG. 11, the further detection signal is generated based on the detected further interaction particles and / or the detected further interaction radiation using the detector, for example the first detector 116 and / or the second detector 117 and / or the chamber detector 119 and / or the third detector 121 and / or the radiation detector 500 of the combination device 202.In a further method step S 41 of the method according to the invention according to FIG. 11, the further thickness of the object 125 is determined on the basis of the generated further detection signal at the at least one predefinable first position 151 on the first surface 150 of the object 125.In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that a dependence of the detection signal on the thickness 154 of the object 125 at the at least one predefinable first position 151 on the first surface 150 of the object 125 is used for determining the thickness 154 of the object 125. In other words, there is a dependence between the detection signal and the thickness 154 of the object 125, wherein the dependence is usable for determining the thickness 154 of the object 125.In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that at least one of the following properties is taken into account when determining the thickness 154 of the object 125 using the dependence of the detection signal on the thickness 154 of the object 125.a material of the object 125 at the at least one predefinable first position 151 on the first surface 150 of the object 125;at least one further material of the object 125 at an inner position 155 within the object 125 to which the electrons of the primary electron beam pass;a surface structure at the at least one predefinable first position 151 on the first surface 150 of the object 125;a shape of the primary electron beam at the at least one predefinable first position 151 on the first surface 150 of the object 125;an extension of the primary electron beam at the at least one predefinable first position 151 on the first surface 150 of the object 125;an intensity of the primary electron beam at the at least one predefinable first position 151 on the first surface 150 of the object 125;a landing energy of the primary electron beam at the at least one predefinable first position 151 on the first surface 150 of the object 125.The inner position 155 denotes, for example, a position which is arranged within the object 125. In particular, this inner position 155 is arranged close to the at least one predeterminable first position 151, so that the primary electron beam first passes this one predeterminable first position 151 and then passes the inner position 155.The surface structure can be given, for example, by the roughness of the first surface 150 of the object 125. For example, it may also occur that a still further material, which is located only in places and thus not covering the surface area on the first surface 150 of the object 125, partially or completely forms the surface structure.The shape of the primary electron beam denotes, for example, the shape of the primary electron beam when it impinges on the object 125. The shape of the primary electron beam may be influenced by the above-mentioned first guiding unit of the combining apparatus 202. The first guide unit is designed, for example, as the first objective lens 107 for focusing the primary electron beam onto the object 125, as the electrostatic and / or magnetic unit for beam shaping or for beam guiding the primary electron beam, for example in the form of the coil 111 or the raster device 115, as a stigmator, as a condenser lens 105, 106 and / or as a mechanically adjustable aperture unit in the form of the first aperture unit 108 and the second aperture unit 109, with which the primary electron beam is bounded. In particular, the beam column in the form of the beam guide tube 104 of the combination device 202 is also understood as a first guide unit.The extension of the primary electron beam can also be influenced, for example, by the above-mentioned first guide unit of the combination device 202, that is to say, for example, by the electrostatic and / or magnetic unit for beam shaping or for beam guidance, by the first objective lens 107, by the coil 111, by the raster device 115, by the stigmator, by the first condenser lens 105, by the second condenser lens 106, by the mechanically adjustable aperture unit 108 and / or by the mechanically adjustable aperture unit 109.The intensity of the primary electron beam denotes, for example, the number of charged particles that reach an area on the object 125 in a period of time. In other words, the intensity of the primary electron beam denotes the current that is generated by the primary electron beam in a specific region on the object 125.Landing energy refers, for example, to the kinetic energy that a single electron of the electrons carries upon impact with the object 125.In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the determination of the thickness 154 is carried out in such a way that the detection signal is used for determining the thickness 154 of the object 125 by a comparison with an assignment of predefinable detection signals to thicknesses of the object 125. In other words, the thickness 154 of the object 125 is determined in such a way that the detection signal is compared with the assignment of predefinable detection signals to thicknesses of the object 125. If the detection signal corresponds to a predefinable detection signal, the thickness 154 of the object 125 corresponds to the thickness assigned to the predefinable detection signal. The assignment of predefinable detection signals to thicknesses of object 125 may be stored in a database 126. The assignment of predefinable detection signals to thicknesses of object 125 may also result from a calculation.In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the detection signal is generated based on the detected interaction particles and / or the detected interaction radiation. The detected interaction particles are formed by at least one of the following possibilities:transmitted electrons detected using the third detector 121;reflected electrons detected using the first detector 116, the second detector 117, the chamber detector 119 and / or the third detector 121;secondary particles, in particular secondary electrons, detected using the first detector 116, the second detector 117, the chamber detector 119 and / or the third detector 121;backscatter particles, in particular backscatter electrons, are detected using the first detector 116, the second detector 117, the chamber detector 119 and / or the third detector 121.Additionally or alternatively, the detected interaction radiation is formed by at least one of the following types of radiation:X-ray radiation detected using the radiation detector 500; andcathodoluminescent light detected using the radiation detector 500.In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the electrons of the primary electron beam of the combination device 202 are transmitted through the object 125 and / or that ions of the ion beam of the combination device 202 are transmitted through the object 125.In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the first surface 150 of the object 125, which is directed toward the ion beam, encloses an angle of 0° to 90° with the ion beam of the combination device 202 guided to the at least one predeterminable second position on the first surface 150 of the object 125, wherein this is achieved by carrying out at least one of the following method steps:rotating the movable object holder 114 from a starting position in a first rotational direction about a first rotational axis, wherein the object 125 is arranged on the movable object holder 114;rotating the second guide unit of the combination device 202 in a second rotational direction about a second rotational axis. According to the embodiments described above, the second guide unit is designed in particular as a functional unit. The functional unit is understood above and also below as the structural unit of the combination device 202, which can be adjusted in any manner. For example, the position of the functional unit can be adjusted in the combination device 202. In particular, the functional unit can be designed as the movably designed object table 122. Additionally or alternatively, it is provided to set an electrostatic and / or magnetic configuration of the functional unit, for example the condenser lens 303 and / or the second objective lens 304 and / or the adjustable or selectable aperture 306 and / or the first electrode device 307 and / or the second electrode device 308. The invention is not limited to the aforementioned possibilities of setting. Rather, the functional unit can be set in any manner suitable for the invention. Accordingly, the second guide unit of the combination device 202 can be rotated, for example. For example, as explained above, the second guide unit can be designed as a functional unit and thus as the object table 122, which is moved using its movement units in such a way that the object holder 114 is rotated about at least one of the two axes of rotation (table axes of rotation) arranged perpendicular to one another;driving the functional unit with an adapted deflection parameter value of a deflection parameter using the control unit 123 so that the ion beam impinges from a predeterminable direction on the at least one predeterminable second position on the first surface 150 of the object 125. With regard to the functional unit, reference is made to the statements just made, which also apply here.The range limits of the aforementioned range from 0° to 90° are included in the aforementioned range.In a possible embodiment of the method according to the invention, the control parameter and / or the further control parameter is designed as the deflection parameter.In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the first surface 150 of the object 125, which is directed toward the ion beam, encloses an angle of 0° to -90° with the ion beam of the combination device 202 guided to the at least one predeterminable second position on the first surface 150 of the object 125, wherein this is achieved by carrying out at least one of the following method steps:rotating the movable object holder 114 from the starting position in a third rotational direction about the first rotational axis, wherein the third rotational direction is opposite the first rotational direction. According to the embodiments described above, the second guide unit is designed in particular as a functional unit. The functional unit is understood above and also below as the structural unit of the combination device 202, which can be adjusted in any manner. For example, the position of the functional unit can be adjusted in the combination device 202. In particular, the functional unit can be designed as the movably designed object table 122. Additionally or alternatively, it is provided to set an electrostatic and / or magnetic configuration of the functional unit, for example the condenser lens 303 and / or the second objective lens 304 and / or the adjustable or selectable aperture 306 and / or the first electrode device 307 and / or the second electrode device 308. The invention is not limited to the aforementioned possibilities of setting. Rather, the functional unit can be set in any manner suitable for the invention. Accordingly, the second guide unit of the combination device 202 can be rotated, for example, by moving the object table 122 using its moving units in such a way that the object holder 114 is rotated about at least one of the two axes of rotation (table axes of rotation) arranged perpendicular to one another;driving the functional unit with an adapted deflection parameter value of a deflection parameter using the control unit 123 so that the ion beam impinges from a predeterminable direction on the at least one predeterminable second position on the first surface 150 of the object 125. With regard to the functional unit, reference is made to the statements just made, which also apply here.The range limits of the aforementioned range from 0° to -90° are included in the aforementioned range.In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the first axis of rotation corresponds to the second axis of rotation.In a yet further embodiment of the method according to the invention, it is additionally or alternatively provided that the deflection parameter value is stored in a yet further database and / or is called up from the yet further database. In this case, the yet further database can correspond, for example, to the database 126 already mentioned above and / or to the further database already mentioned above.In yet another embodiment of the method according to the invention, it is additionally or alternatively provided that the functional unit influences at least one of the following properties of the ion beam:a shape of the ion beam at the at least one predeterminable second position on the first surface 150 of the object 125;an extension of the ion beam at the at least one predeterminable second position on the first surface 150 of the object 125;an intensity of the ion beam at the at least one predeterminable second position on the first surface 150 of the object 125;a landing energy of the ion beam at the at least one predeterminable second position on the first surface 150 of the object 125;deflecting the ion beam in a direction in which the ion beam is guided;a dwell time of the ion beam at the at least one predefinable second position on the first surface 150 of the object 125;a distance between object points on the first surface 150 of the object 125 to which the ion beam is guided using the at least one guide unit of the combination device 202;a further dwell time of the ion beam on the object points on the first surface 150 of the object 125; andparameters for controlling a scanning device, wherein the scanning device is used to guide the ion beam onto the object points on the first surface 150 of the object 125.With regard to the functional unit, reference is made to the statements just made, which also apply here. According to the embodiments described above, the second guide unit is designed in particular as a functional unit. The functional unit is understood above and also below as the structural unit of the combination device 202, which can be adjusted in any manner. For example, the position of the functional unit can be adjusted in the combination device 202. In particular, the functional unit can be designed as the movably designed object table 122. Additionally or alternatively, it is provided to set an electrostatic and / or magnetic configuration of the functional unit, for example the condenser lens 303 and / or the second objective lens 304 and / or the adjustable or selectable aperture 306 and / or the first electrode device 307 and / or the second electrode device 308. The invention is not limited to the aforementioned possibilities of setting. Rather, the functional unit can be set in any manner suitable for the invention.With regard to the shape of the ion beam, the extent of the ion beam, the intensity of the ion beam and the landing energy of the ion beam, reference is made to the explanations relating to the shape of the primary electron beam, to the extent of the primary electron beam, to the intensity of the primary electron beam and to the landing energy of the primary electron beam, which apply analogously here too.The dwell time denotes, for example, the time duration that the ion beam remains at the at least one predefinable second position on the first surface 150 of the object 125.The distance (also called pixel spacing) between object points indicates how far the object points are separated on the first surface 150 of the object 125. In this case, the points on the first surface 150 of the object 125 to which the ion beam is guided using the at least one guide unit are referred to as object points. The distance can be formed, for example, by the distance between the predefinable second position on the first surface 150 of the object 125 and the further predefinable second position on the first surface 150 of the object 125.The further dwell time denotes, for example, the time duration that the ion beam remains on the object point.The parameters for controlling the raster device denote further parameters which, within the meaning of the invention, are suitable for controlling the functional unit in order to guide the ion beam onto the object points on the first surface 150 of the object 125 in such a way that processing of the object 125 within the meaning of the invention is made possible. In the context of the invention, a raster device is understood to mean one of the at least one functional units of the combination device 202. The parameters for controlling the raster device can relate, for example, to a time duration between two successive processings of object points. Furthermore, the parameters for controlling the raster device can also relate, for example, to a sequence of the processing of object points.FIG. 12 shows a schematic illustration of a sequence of a first embodiment of a further method according to the invention. The further method according to the invention serves for determining a processing point on a first surface 150 of an object 125 using the combination device 202. The first embodiment of the further method according to the invention according to FIG. 12 is based on the embodiment of the method according to the invention according to FIG. 5 explained above. Reference is therefore first made to the explanations given above, which also apply here. In contrast to the embodiment of the method according to the invention according to FIG. 5, the first embodiment of the further method according to the invention according to FIG. 12 has further method steps S 0, S 44Q, S 44A and S 44B.In method step S 0 of the further method according to the invention, the object 125 is processed using the ion beam by guiding the ion beam to a location of the object 125. For this purpose, for example, the ion beam can be guided onto the site using the at least one guide unit. It should be noted that the location may be on any surface of the object 125.It is pointed out that the at least one predefinable first position 151 on the first surface 150 of the object 125 denoted in method steps S 1, S 2, S 3, S 4, S 44Q, S 44A and S 44B may be different and / or identical to the location of the object 125.In method step S 44Q of the further method according to the invention, it is determined whether the determined thickness 154 at the at least one predefinable first position 151 on the first surface 150 of the object 125 is different from a predefinable thickness value 410. If the determined thickness 154 at the at least one predefinable first position 151 on the first surface 150 of the object 125 is different from the predefinable thickness value 410, this at least one predefinable first position 151 on the first surface 150 of the object 125 is identified as a processing point (method step S 44A). In other words, the at least one predefinable first position 151 on the first surface 150 of the object 125 can be identified as a processing point if the determination of the thickness 154 of the object 125 at the at least one predefinable first position 151 on the first surface 150 of the object 125 yields a value which indicates that this thickness 154 has changed. This change can have been effected, for example, by the processing of the object 125 with the ion beam when the latter was guided to the location on the object 125. In other words, the position on the first surface 150 of the object 125 whose thickness 154 has changed is referred to as the processing point. In other words, the processing point is a position on the first surface 150 of the object 125 that has been processed.If the determined thickness 154 at the at least one predefinable first position 151 on the first surface 150 of the object 125 is not different from the predefinable thickness value 410, this at least one predefinable first position 151 on the first surface 150 of the object 125 is not identified as a processing point (method step S 44B).In a further embodiment of the further method according to the invention, it is additionally or alternatively provided that the determination of the thickness 154 of the object 125 is carried out using a control unit 123 of the combination device 202 in such a way that the generated detection signals, process parameters and / or measurement parameters are matched to values of a database, wherein the aforementioned database corresponds, for example, to the database 126 already mentioned further above. Additionally or alternatively, a calculation can be carried out by the processor of the combination device 202 on the basis of the generated detection signals, the process parameters and / or the measurement parameters.In yet another embodiment of the further method according to the invention, it is additionally or alternatively provided that the predefinable thickness value 410 arises from a further database by retrieving the thickness value 410, wherein the aforementioned further database corresponds, for example, to the database 126 already mentioned further above. Additionally or alternatively, the predefinable thickness value 410 can be effected by an input by a user of the combination device 202 into a control unit 123 of the combination device 202.In other words, the thickness 154 of the object 125 can be determined at a position and, starting from this determination, the predeterminable first position 151 on the first surface 150 of the object 125 is determined as the processing point.All embodiments of the method according to the invention described here are not restricted to the sequences of the method steps listed above. Rather, any sequences of the method steps are conceivable and can be used in the method according to the invention, wherein the any sequences are suitable for achieving the object in the sense of the invention. Alternatively or additionally, the parallel execution of at least two method steps is also possible. Alternatively or additionally, it is also possible to omit individual method steps.The features of the invention disclosed in the present description, in the drawings and in the claims can be essential, both individually and in any combinations, for the realisation of the invention in its various embodiments. The invention is not limited to the described embodiments. It can be varied within the scope of the claims and taking into account the knowledge of the responsible person skilled in the art.List of reference characters100 SEM 101 electron source 102 extraction electrode 103 anode 104 beam guide tube 105 first condenser lens 106 second condenser lens 107 first objective lens 108 first aperture unit 108A first aperture opening 109 second aperture unit 110 pole shoes 111 coil 112 single electrode 113 tube electrode 114 object holder 115 raster device 116 first detector 116A opposing field grating 117 second detector 118 second aperture opening 119 chamber detector 120 sample chamber 121 third detector 122 object stage 123 control unit 124 monitor 125 object 126 database 127 processor 150 first surface 151 first position on the first surface 152 second surface 153 second position on the second surface 154 thickness 155 inner position 200 combination device 202 second embodiment of the combination device 300 ion beam device 301 ion beam generator 302 extraction electrode in the ion beam device 303 condenser lens 304 second objective lens 306 adjustable or selectable aperture 307 first electrode device 308 second electrode device 400 predefinable threshold value 410 predefinable thickness value 500 radiation detector 600 first movement unit 601 housing 602 second movement unit 603 first table rotation axis 604 third movement unit 605 fourth movement unit 606 fifth movement unit 607 second table rotation axis 608 motor control unit 609 holder 709 first beam axis 710 second beam axis 1000 gas supply device 1001 gas reservoir in the form of a precursor reservoir 1002 feed line 1003 cannula 1004 valve 1005 adjusting unit 1006 temperature measuring unit 1007 temperature adjusting unit M 1 first stepping motor M 2 second stepping motor M 3 third stepping motor M 4 fourth stepping motor M 5 fifth stepping motor S 0 to S 8 method steps S 11 method step S 13 method step S 21 method step S 23 method step S 31 method step S 33 step S 41 step S 43 step S 44A step S 44B step S 44Q step S 51 step S 52 step S 52A step S 52B step S 52Q step S 53 step S 61 step S 62 step S 63 step S 71 step S 73 step S 81 step S 83 step SReferences included in the specificationThis list of documents cited by the applicant has been produced in an automated manner and is only included for the better information of the reader. The list is not part of the German patent application or utility model application. The DPMA does not take any adhesion for any faults or omissions.Patent Literature citedU.S. Pat. No. 8,536,525 B2

[0014] US 2007 / 0018099 A1

[0014] DE 10 2012 110 651 B4

[0014] U.S. Pat. No. 8,816,303 B2

[0014] DE 10 2010 024 625 A1

[0014]

Claims

Method for operating a particle beam device (200, 202), wherein the method comprises the following method steps: (i) guiding a first particle beam of the particle beam device (200, 202) to at least one predeterminable first position (151) on a first surface (150) of an object (125) using at least one guiding unit (100, 104, 105, 106, 107, 108, 109, 115, 122) of the particle beam device (200, 202), wherein the particle beam device (200, 202) comprises at least one first beam generator (101) for generating the first particle beam, wherein the first particle beam comprises first charged particles, and wherein the particle beam device (200, 202) comprises at least one second beam generator (301) for generating a second particle beam, wherein the second particle beam comprises second charged particles; (ii) detecting interaction particles and / or interaction radiation with a detector (116, 117, 119, 121, 500) of the particle beam device (200, 202), wherein the interaction particles and / or the interaction radiation emerge / emerge from an interaction of the first particle beam with the object (125) upon impingement of the first particle beam on the at least one predeterminable first position (151) on the first surface (150) of the object (125); (iii) generating a detection signal based on the detected interaction particles and / or the detected interaction radiation using the detector (116, 117, 119, 121, 500); (iv) determining a thickness (154) of the object (125) based on the generated detection signal at the at least one predeterminable first position (151) on the first surface (150) of the object (125) using a control unit (123) of the particle beam device (200, 202), wherein the thickness (154) of the object (125) is given by a length of a connecting straight line, wherein the connecting straight line connects the at least one predeterminable first position (151) on the first surface (150) of the object (125) to a second position (153) on a second surface (152) of the object (125); (v) determining a deviation of the determined thickness (154) of the object (125) from a predefinable thickness value of the object (125) at the at least one predefinable first position (151) on the first surface (150) of the object (125); and (vi) performing the following method steps: a. adapting and / or determining at least one control parameter value of at least one control parameter using the control unit (123) for controlling a functional unit (300, 301, 302, 303, 304, 306, 307, 308) of the particle beam device (200, 202) as a function of the determined deviation, wherein the functional unit (300, 301, 302, 303, 304, 306, 307, 308) influences at least one predefinable property of the particle beam device (200, 202) relating to the second particle beam; b. controlling the functional unit (300, 301, 302, 303, 304, 306, 307, 308) with the at least one adjusted control parameter value and / or with the at least one determined control parameter value of the control parameter using the control unit (123), so that the at least one predeterminable property of the particle beam device (200, 202) relating to the second particle beam is influenced by the functional unit (300, 301, 302, 303, 304, 306, 307, 308); c. guiding the second particle beam of the particle beam device (200, 202) to at least one predeterminable second position on the first surface (150) of the object (125) using the at least one guiding unit (300, 303, 304, 306, 307, 308) of the particle beam device (200, 202) and processing the object (125) at the at least one predeterminable second position on the first surface (150) of the object (125) with the second particle beam.The method of claim 1, wherein the method comprises at least one of the following steps: (i) electrons are used as the first charged particles; (ii) ions are used as the second charged particles.Method according to Claim 1 or 2, wherein after processing of the method steps (i) to (vi) of Claim 1, at least one further pass of the method steps (i) to (vi) of Claim 1 follows, wherein in the at least one further pass in the method step (v) of Claim 1 the thickness value is replaced by a further thickness value, and wherein after termination of a last pass of the at least one further pass of the method steps (i) to (vi) of Claim 1 a target thickness (154) is achieved.Method according to at least one of the preceding claims, wherein the method comprises at least one of the following method steps: (i) calculation of the control parameter value with data; (ii) direct loading of the control parameter value from a database (126).Method according to at least one of the preceding claims, wherein the processing of the object (125) comprises one of the following method steps: (i) If the determined deviation at the at least one predeterminable first position (151) on the first surface (150) of the object (125) is greater in terms of amount than a predeterminable threshold value (400), material of the object (125) at the at least one predeterminable second position is ablated and / or deposited on the first surface (150) of the object (125) using the particle beam device (200, 202); (ii) if the determined deviation at the at least one predeterminable first position (151) on the first surface (150) of the object (125) is smaller in absolute value than the predeterminable threshold value (400), then no material at the at least one predeterminable second position is ablated and / or deposited on the first surface (150) of the object (125) using the particle beam device (200, 202).Method according to claim 5, wherein the threshold value (400) is stored in a database (126) and / or loaded from the database (126) into the control unit (123).Method according to at least one of the preceding claims, wherein the method steps (i) to (v) of claim 1 are repeated at at least one further predefinable first position (151) on the first surface (150) of the object (125), and wherein the method step (vi) of claim 1 is repeated at at least one further predefinable second position on the first surface (150) of the object (125).Method according to Claim 7, wherein the at least one further predefinable first position (151) on the first surface (150) of the object (125) corresponds to the at least one predefinable first position (151) on the first surface (150) of the object (125), and wherein the at least one further predefinable second position on the first surface (150) of the object (125) corresponds to the at least one predefinable second position on the first surface (150) of the object (125).Method according to at least one of the preceding claims, wherein the predeterminable thickness value is identical for all first positions (151) on the first surface (150) of the object (125).Method according to at least one of the preceding claims, wherein an additional measurement step is carried out at the at least one predeterminable first position (151) on the first surface (150) of the object (125), wherein the measurement step comprises the following method steps: (i) guiding the first particle beam of the particle beam device (200, 202) to the at least one predeterminable first position (151) on the first surface (150) of the object (125) using the at least one guiding unit (100, 104, 105, 106, 107, 108, 109, 115, 122); (ii) detecting further interaction particles and / or a further interaction radiation with the detector (116, 117, 119, 121, 500) of the particle beam device (200, 202), wherein the further interaction particles and / or the further interaction radiation emerge / emerge from the interaction of the first particle beam with the object (125) upon impingement of the first particle beam on the at least one predeterminable first position (151) on the first surface (150) of the object (125); (iii) generating a further detection signal based on the detected further interaction particles and / or the detected further interaction radiation using the detector (116, 117, 119, 121, 500); (iv) determining the thickness (154) of the object (125) on the basis of the generated further detection signal at the at least one predeterminable first position (151) on the first surface (150) of the object (125).Method according to at least one of the preceding claims, wherein a dependence of the detection signal on the thickness (154) of the object (125) at the at least one predeterminable first position (151) on the first surface (150) of the object (125) is used for determining the thickness (154) of the object (125).Method according to Claim 11, wherein at least one of the following properties is taken into account in determining the thickness (154) of the object (125) using the dependence of the detection signal on the thickness (154) of the object (125): - a material of the object (125) at the at least one predeterminable first position (151) on the first surface (150) of the object (125); - at least one further material of the object (125) at an inner position (155) within the object (125) to which the first charged particles of the first particle beam pass; - a surface structure at the at least one predeterminable first position (151) on the first surface (150) of the object (125); - a shape of the first particle beam at the at least one predeterminable first position (151) on the first surface (150) of the object (125); an extent of the first particle beam at the at least one predefinable first position (151) on the first surface (150) of the object (125); an intensity of the first particle beam at the at least one predefinable first position (151) on the first surface (150) of the object (125); a landing energy of the first particle beam at the at least one predefinable first position (151) on the first surface (150) of the object (125).Method according to at least one of the preceding claims, wherein the determination of the thickness (154) is carried out in such a way that the detection signal is used for determining the thickness (154) of the object (125) by comparison with an assignment of predeterminable detection signals to thicknesses of the object (125).Method according to at least one of the preceding claims, wherein the detection signal is generated based on the detected interaction particles and / or the detected interaction radiation, wherein the detected interaction particles are formed by at least one of the following possibilities: - transmitted electrons detected using the detector (116, 117, 119, 121, 500); - reflected electrons detected using the detector (116, 117, 119, 121, 500); - secondary particles, in particular secondary electrons detected using the detector (116, 117, 119, 121, 500); - backscatter particles, in particular backscatter electrons detected using the detector (116, 117, 119, 121, 500); and / or wherein the detected interaction radiation is formed by at least one of the following types of radiation: - X-ray radiation detected using the detector (116, 117, 119, 121, 500); and cathodoluminescent light detected using the detector (116, 117, 119, 121, 500).Method according to at least one of the preceding claims, wherein the first charged particles of the first particle beam of the particle beam device (200, 202) are transmitted through the object (125).Method according to at least one of the preceding claims, wherein the first surface (150) of the object (125), which is directed towards the second particle beam, encloses an angle of 0° to 90° with the second particle beam of the particle beam device (200, 202) guided to the at least one predeterminable second position on the first surface (150) of the object (125), wherein this is achieved by carrying out at least one of the following method steps: (i) rotating a movable object holder (114) from a starting position in a first rotational direction about a first rotational axis, wherein the object (125) is arranged on the movable object holder (114); (ii) rotating the at least one guide unit (300, 303, 304, 306, 307, 308) of the particle beam device (200, 202) in a second rotational direction about a second rotational axis; (iii) Actuating the functional unit (300, 301, 302, 303, 304, 306, 307, 308) with an adapted deflection parameter value of a deflection parameter using the control unit (123), such that the second particle beam impinges from a predeterminable direction on the at least one predeterminable second position (151) on the first surface (150) of the object (125).Method according to claim 16, wherein the first surface (150) of the object (125), which is directed towards the second particle beam, encloses an angle of 0° to -90° with the second particle beam of the particle beam device (200, 202) guided to the at least one predeterminable second position on the first surface (150) of the object (125), wherein this is achieved by carrying out at least one of the following method steps: (i) rotating the movable object holder (114) from the starting position in a third rotational direction about the first rotational axis, wherein the third rotational direction is opposite the first rotational direction; (ii) rotating the at least one guide unit (300, 303, 304, 306, 307, 308) of the particle beam device (200, 202) in a fourth rotational direction about the second rotational axis, wherein the fourth rotational direction is opposite the second rotational direction; (iii) Actuating the functional unit (300, 301, 302, 303, 304, 306, 307, 308) with the adapted deflection parameter value of the deflection parameter using the control unit (123), such that the second particle beam impinges from the predeterminable direction on the at least one predeterminable second position on the first surface (150) of the object (125).The method of at least one of claims 16 and 17, wherein the first axis of rotation corresponds to the second axis of rotation.The method of at least one of claims 16 to 18, wherein the deflection parameter value is stored in the database (126) and / or retrieved from the database (126).Method according to at least one of the preceding claims, wherein the functional unit (300, 301, 302, 303, 304, 306, 307, 308) influences at least one of the following properties of the second particle beam: - a shape of the second particle beam at the at least one predeterminable second position on the first surface (150) of the object (125); - an extent of the second particle beam at the at least one predeterminable second position on the first surface (150) of the object (125); - an intensity of the second particle beam at the at least one predeterminable second position on the first surface (150) of the object (125); - a landing energy of the second particle beam at the at least one predeterminable second position on the first surface (150) of the object (125); - a deflection of the second particle beam in a direction in which the second particle beam is guided; a dwell time of the second particle beam at the at least one predeterminable second position on the first surface (150) of the object (125); a distance between object points on the first surface (150) of the object (125) to which the second particle beam is guided using the at least one guide unit (300, 303, 304, 306, 307, 308) of the particle beam apparatus (200, 202); a further dwell time of the second particle beam on the object points on the first surface (150) of the object (125); and a parameter for controlling a raster device, wherein the raster device is used to guide the second particle beam onto the object points on the first surface (150) of the object (125).Method for determining a processing point on a first surface (150) of an object (125) using a particle beam device (200, 202), wherein the particle beam device (200, 202) has at least one first beam generator (101) for generating a first particle beam, wherein the first particle beam has first charged particles, and wherein the particle beam device (200, 202) has at least one second beam generator (301) for generating a second particle beam and a processor (127), wherein the second particle beam has second charged particles, wherein the method has the following method steps: (i) processing the object (125) using the second particle beam by guiding the second particle beam onto a location of the object (125); (ii) guiding the first particle beam of the particle beam device (200, 202) to at least one predeterminable first position (151) on the first surface (150) of the object (125) using at least one guiding unit (100, 104, 105, 106, 107, 108, 109, 115, 122) of the particle beam device (200, 202); (iii) detecting interaction particles and / or interaction radiation with a detector (116, 117, 119, 121, 500) of the particle beam device (200, 202), wherein the interaction particles and / or the interaction radiation result / result from an interaction of the first particle beam with the object (125) upon an impact of the first particle beam on the at least one predeterminable first position (151) on the first surface (150) of the object (125); (iv) generating a detection signal based on the detected interaction particles and / or the detected interaction radiation using the detector (116, 117, 119, 121, 500); (v) determining a thickness (154) of the object (125) based on the generated detection signal at the at least one predeterminable first position (151) on the first surface (150) of the object (125) using a control unit (123) of the particle beam device (200, 202), wherein the thickness (154) of the object (125) is given by a length of a connecting line, wherein the connecting line connects the at least one predeterminable first position (151) on the first surface (150) of the object (125) to a second position (153) on a second surface (152) of the object (125); (vi) determining the at least one predeterminable first position (151) on the first surface (150) of the object (125) as a processing point if the determined thickness (154) deviates from a predeterminable thickness value.Method according to Claim 21, wherein the determination of the thickness (154) of the object (125) is carried out using the control unit (123) of the particle beam device (200, 202) in such a way that the generated detection signals, process parameters and / or measurement parameters are matched to values of a database (126) and / or a calculation is carried out by the processor (127) of the particle beam device (200, 202) on the basis of the generated detection signals, the process parameters and / or the measurement parameters.Method according to Claim 21 or 22, wherein the predeterminable thickness value arises from a retrieval of a thickness value from a further database and / or from an input by a user of the particle beam device (200, 202) into the control unit (123) of the particle beam device (200, 202).Computer program product having a program code which can be loaded into a processor (127) of a particle beam device (200, 202) and, when executed, controls the particle beam device (200, 202) in such a way that a method according to at least one of the preceding claims is carried out.Particle beam device (200, 202) for imaging, processing and / or analysis of an object (125), having - at least one first beam generator (101) for generating a first particle beam having first charged particles; - at least one second beam generator (301) for generating a second particle beam having second charged particles; at least one guide unit (100, 104, 105, 106, 107, 108, 109, 115, 122, 300, 303, 304, 306, 307, 308) for guiding and / or focusing the first particle beam and / or the second particle beam on the object (125), at least one functional unit (100, 101, 102, 103, 104, 105, 106, 107, 108, 109, 115, 122, 300, 301, 302, 303, 304, 306, 307, 308) of the particle beam device (200, 202), wherein the functional unit (100, 101, 102, 103, 104, 105, 106, 107, 108, 109, 115, 122, 300, 301, 302, 303, 304, 306, 307, 308) influences at least one predefinable property of the particle beam device (200, 202); at least one control unit (123) for determining a thickness (154) of the object (125) and for controlling the functional unit (100, 101, 102, 103, 104, 105, 106, 107, 108, 109, 115, 122, 300, 301, 302, 303, 304, 306, 307, 308); at least one detector (116, 117, 119, 121, 500) for detecting interaction particles and / or interaction radiation which result / arises from an interaction of the first particle beam with the object (125) when the first particle beam impinges on the object (125); at least one display unit (124) for displaying an image of the object (125) and / or a representation of data about the object (125), wherein the image and / or the representation is / are generated based on detection signals generated by detecting the interaction particles and / or the interaction radiation; and comprising - at least one processor (127) in which a computer program product according to claim 24 is loaded.Particle beam device (200, 202) according to Claim 25, wherein the guide unit is designed as an objective lens (107, 304) and / or a raster device (115).Particle beam device (200, 202) according to Claim 25 or 26, wherein the particle beam device (200, 202) has at least one of the following features for realizing a predeterminable angle between the first particle beam and / or the second particle beam and the object (125): a. a movably designed object holder (114) for holding and positioning the object (125); b. the guide unit (100, 104, 105, 106, 107, 108, 109, 115, 122, 300, 303, 304, 306, 307, 308) of the particle beam device (200, 202) is movably designed; c. the functional unit (100, 101, 102, 103, 104, 105, 106, 107, 108, 109, 115, 122, 300, 301, 302, 303, 304, 306, 307, 308) is designed such that the second particle beam impinges on the object (125) from the predeterminable direction, wherein an angle between the second particle beam and the object (125) is dependent on the actuation of the functional unit (100, 101, 102, 103, 104, 105, 106, 107, 108, 109, 115, 122, 300, 301, 302, 303, 304, 306, 307, 308).Particle beam device (200, 202) according to one of Claims 25 to 27, wherein the particle beam device (200, 202) is an electron beam device (100) and / or an ion beam device (300).

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