Power module with a circuit carrier

Abstract

The invention relates to a power module (12) with a circuit carrier (14) comprising a substrate (40) and an electrical insulation layer (16), wherein the circuit carrier (14) has a first conductor structure (18) with an external contact area (18.2) and at least one second conductor structure (20A, 20B) with at least one external contact area (20A.2, 20B.2) and a further, third conductor structure (22) comprising at least one external contact area (22.2). Semiconductor devices (42) are arranged individually or in groups (64, 66) on the circuit carrier (14). In a multifunctional frame (50) associated with the power module (12) are current-carrying components T+ bridge (134) and T- bridge (138) which are electrically connected to the semiconductor components (42) installed in the power module (12) individually or in groups (64, 66) by at least one solder connection (128, 130) by including a spacer (100, 126).

Description

Technical field

[0001] The invention relates to a power module with a circuit carrier comprising a substrate and an electrical insulation layer. The circuit carrier has a first conductor structure with an external contact area, at least a second conductor structure with at least one external contact area, and a further, third conductor structure comprising at least one external contact area. State of the art

[0002] In current technology, power modules, such as those installed in a power module bridge, are additionally molded. During molding, the power module is embedded in a solid protective housing, for example made of plastic (mold compound). The mold compound serves to encase and protect the interior of the power module. However, these molded housings are not particularly resistant to cracking.

[0003] From DE 11 2017 004 390 T5, a power module is known which has the following features: an insulating substrate with a front side to which a power semiconductor element is attached; a base plate connected to a back side of the insulating substrate; a housing attached to the base plate and surrounding the insulating substrate; a cover attached to the housing and forming a sealed area; and a silicone gel serving as a filler element that fills the entire sealed area and has an internal stress that acts as a compressive stress.

[0004] From DE 10 2014 219 998 B4, a power module is known, in particular for providing a phase current for an electric motor. The power module comprises a circuit carrier with a surface, at least two first contact surfaces on the surface, and at least two first power transistors, each having a ground contact surface. Each of the at least two first power transistors is directly arranged on one of the first contact surfaces and electrically connected to the respective first contact surface via its ground contact surface. The power module also comprises a second contact surface on the surface and at least two second power transistors, each having a ground contact surface.The at least two second power transistors are arranged directly on the second contact surface and are electrically connected to the second contact surface via their respective base contact surfaces. Furthermore, the power module comprises at least two third contact surfaces on its surface, wherein the at least two second power transistors each have an additional contact surface on their sides facing away from the surface of the circuit carrier, and each second power transistor of the at least two second power transistors is electrically connected to one of the at least two third contact surfaces via its additional contact surface.The at least two first contact surfaces and the at least two third contact surfaces are arranged alternately in a longitudinal direction of the power module, and the second contact surface is arranged next to the at least two first contact surfaces and the at least two third contact surfaces, wherein the second contact surface has at least two contact areas, one of which is located next to each of the at least two first power transistors. The at least two first power transistors each have an additional contact surface on their sides facing away from the surface of the circuit carrier, and each first power transistor of the at least two first power transistors is electrically connected via its additional contact surface to the adjacent contact area of ​​the second contact surface.In this arrangement, at least two contact areas of the second contact surface and at least two second power transistors are arranged alternately one after the other in the longitudinal direction.

[0005] From EP 2 418 925 B1, an electrical contact between a flexible film having at least one conductor track and at least one electrical contact of a sensor or control device is known. In this connection, an end section of the flexible film is electrically contacted at a contact point by means of heat input, wherein the end section of the flexible film at the contact point is aligned with the electrical contacts formed above. The end section of the flexible film is designed as a corrugation, in particular as a deflection. Description of the invention

[0006] According to the invention, a power module with a circuit carrier is proposed, comprising a substrate and an electrical insulation layer. The circuit carrier comprises a first conductor structure with an external contact area, at least a second conductor structure with at least one external contact area, and a further, third conductor structure having at least one external contact area, wherein semiconductor components are arranged individually or in groups. Contact surfaces are arranged in a multifunctional frame associated with the power module, which are electrically connected to semiconductor components installed individually or in groups in the power module by at least one solder connection including at least one spacer.

[0007] In a further advantageous embodiment of the power module proposed according to the invention, the semiconductor components are arranged individually or in groups on a base or a base surface of the power module.

[0008] The power module proposed according to the invention is designed such that the first spacer is arranged in the area of ​​a joint between a bottom surface of the multifunctional frame and a top surface of the power module. Component differences or manufacturing variations that arise during the joining of the components in question can be compensated for by means of the at least one spacer provided within the at least one solder joint. In a further advantageous embodiment of the power module proposed according to the invention, current-carrying paths, such as a T+ bridge and / or a T- bridge and / or a phase bridge, are arranged one above the other or side by side in the multifunctional frame, thereby advantageously achieving a low-inductance connection.

[0009] In a further advantageous embodiment of the power module proposed according to the invention, a first material-bonded connection is formed within an opening on the underside of the multifunctional frame. This results in relatively easy access to the at least one material-bonded solder connection.

[0010] In a further advantageous embodiment of the power module proposed according to the invention, the second spacer is arranged directly on a contact surface of the semiconductor device.

[0011] In the power module proposed according to the invention, there is a second solder connection between the first spacer and the second spacer.

[0012] The power module proposed according to the invention is further characterized in that the first and the second solder joint contain a first and a second solder layer, respectively.

[0013] In a further advantageous embodiment of the power module proposed according to the invention, it is preferably connected to a cooling surface over a flat area, either via a sintered layer or via a solder / adhesive connection.

[0014] Finally, the power module proposed according to the invention is designed such that the semiconductor components and the second spacers connected to them via contact surfaces are enclosed by a molding compound. The molding compound, which particularly surrounds the semiconductor components, effectively improves their protection against environmental influences such as temperature, vibrations, or liquid wetting, and the like. Advantages of the invention

[0015] In the power module proposed according to the invention, a multifunctional frame and a power module are decoupled from each other and electrically contacted essentially in the Z-direction via metallurgical connections, preferably designed as solder joints. Advantageously, current-carrying contact surfaces extend within the multifunctional frame, which can be arranged above or below the power module, while the semiconductor components, arranged individually or in groups on a base surface of the power module, are located within the power module. The power module is cooled by a cooling surface, the cooling surface being preferably planar and connected to the underside of the power module either via a sintered connection or via a solder or adhesive bond.The multifunctional frame can be positioned both above and below the power module in the Z direction; the position of the cooling surface is determined accordingly, such that cooling always takes place where the greatest heat loss occurs, i.e., at the bottom of the power module, i.e., the cooling surface is thermally connected.

[0016] The metallurgical connection proposed according to the invention between the multifunctional frame and the semiconductor device mounted on the base of the power module, for example MOSFETs, IGBTs, diodes, or another electronic component, creates an effective and robust electrical connection between the multifunctional frame, the contact surfaces located therein, and the semiconductor device itself. Preferably, spacers configured either angularly, circularly, or disc-shaped are arranged in the metallurgical connections, which are preferably implemented as solder joints. The spacers compensate for height differences and also provide an increased surface area, thus enabling the formation of a current-carrying electrical connection that is nevertheless extremely thin.

[0017] The solution proposed according to the invention allows for improved cooling, as larger distances between the semiconductor components can be achieved. It makes it possible to relocate current-carrying paths, such as T+ and / or T- bridges, as well as a phase bridge, from the power module to the multifunctional frame and to implement them there in a low-inductance configuration, either stacked or adjacent to each other. This offers the advantage that the magnetic fields generated in the bridges during current flow cancel each other out, thus preventing parasitic currents. The low-inductance connection achieved in this way significantly reduces switching losses.

[0018] Decoupling the first and second levels in the power module and multifunctional frame results in a compact design for the power module proposed according to the invention. Furthermore, the chosen superimposed arrangement of the two functional levels—namely, the first level, in which the semiconductor elements are located, and the second level, in which the current is conducted—significantly improves manufacturing. More favorable tolerances can be achieved for more precise further processing, and the service life of the power module is increased due to the reduced complexity. In particular, when the semiconductor components are contacted in the first level and the current-carrying components in the second level, i.e., within the multifunctional frame, a robust electrical connection of these components is achieved.Furthermore, the formation of press-fit pins is technically proven and robustly achievable in mass production.

[0019] The solution proposed according to the invention advantageously allows the external contact areas of the power module to be relocated to a multifunctional frame arranged offset from it in the Z-direction. Furthermore, according to the solution proposed according to the invention, the underside of the power module can advantageously be connected to the top side of a cooling surface either by a planar sintered connection, a planar solder connection, or a planar adhesive connection. All embodiments offer the advantage of planar contacting, which allows the heat generated during operation of the semiconductor components of the power module to be reliably dissipated and prevents thermal overload of the power module. Brief description of the drawings

[0020] The invention is described in more detail below with reference to the drawings.

[0021] They show: Fig. 1 a top view of a first circuit carrier of a power module consisting of a carrier substrate and an arrangement of semiconductor components, Fig. 2 A top view of a power module with separate cooling and layout areas with laterally arranged areas for press-fit pins, Fig. 3 an arrangement consisting of a power module mounted on a cooling surface and a multi-function frame arranged above it in the Z direction, Fig. 4 an exploded view of the components included in the multi-function frame, Fig. 5 a top view of the arrangement according to Fig. 3, Fig. 6. A detailed, enlarged-scale representation of an electrical connection between the multifunction frame on the one hand and the semiconductor device on the base of the power module on the other hand. Fig. 7 an enlarged representation of a plumb line joint, Fig. 8 a perspective section through the multifunctional frame, Fig. 9 a side view of the joined arrangements of the components in the multi-function frame and in the power module and Fig. 10 vertical guides of T+ bridges and T- bridges. Embodiments of the invention

[0022] In the following description of embodiments of the invention, identical or similar elements are designated by the same reference numerals, and repeated descriptions of these elements are omitted in individual cases. The figures represent the subject matter of the invention only schematically.

[0023] Fig. Figure 1 shows a top view of a power module 12, in particular of its circuit carrier 14.

[0024] According to the top view Fig. It can be seen from Figure 1 that a carrier substrate 40 of the circuit carrier 14 is provided with a number of conductor structures 18, 20A, 20B, 22. The circuit carrier 14 extends in an X,Y plane 10, and is provided with an electrical insulation layer 16. On this layer, separated from each other by channel-shaped interruptions, are a first conductor structure 18, which has an external contact area 18.2. Furthermore, symmetrically to a central longitudinal axis 24 of the power module 12, second conductor structures 20A, 20B are located opposite each other on the first circuit carrier 14. Each of the two second conductor structures 20A, 20B comprises an external contact area 20A.2, 20B.2. Finally, a third conductor structure 22 is applied to the circuit carrier 14 or to its electrical insulation layer 16, which has at least one external contact area 22.2.

[0025] The conductor structures 18, 20A, 20B, and 22 mentioned above are electrically separated from one another and are applied to the circuit carrier 14 essentially symmetrically with respect to the central longitudinal axis 24. Position 36 designates an active area, and a surrounding layout area for current conduction is designated by reference numeral 38. Advantageously, AMB (Active Metal Brazing, (OFC (Oxygen-free Copper) / Si3N4 / OFC)) is chosen as the substrate 40 of the circuit carrier 14.

[0026] According to the representation Fig. Figure 2 shows a top view of the power module 12, in which semiconductor devices 42 are arranged on active surfaces 36 in this schematic representation, which may be, for example, transistors, MOSFETs, IGBTs, diodes or other semiconductor devices that can be used as semiconductor switches. Fig. Figure 2 shows that a first group 64 of semiconductor devices 42 is mounted on the active areas 36. The individual semiconductor devices 42 can, for example, be configured as MOSFETs and have control terminals 34 on their outer sides, via which the individual semiconductor devices 42 of the first group 64 can be controlled (not shown in detail). Analogous to the first group 64, a second group 66 of semiconductor devices 42 is arranged, which can also be MOSFETs, each with control terminals 34 on its outer surface. An arrangement of the semiconductor devices 42 in groups 64 and 66 is not mandatory – depending on the scaling, they can also be arranged individually, i.e., not in groups.The semiconductor components 42 of the second group 66 can be controlled externally via the control terminals 34, which, however, is shown in the illustration according to . Fig. 2 is not shown in more detail.

[0027] Furthermore, according to the top view Fig. 2 can be seen that in the Fig. 2 X,Y plane 10 shown on the longitudinal sides of the circuit carrier 14 in the form of a carrier substrate 40 areas are provided in which press-fit pins 76 - 94 are inserted into the drawing plane according to Fig. 2 protrude. Specifically, these are the first and second press-fit pins 76, 78, as well as the third and fourth press-fit pins 80, 82, and, arranged opposite each other, the fifth and sixth press-fit pins 84, 86. In the area of ​​the opposite end face of the circuit carrier 14, the seventh and eighth press-fit pins 88, 90, as well as the ninth and tenth press-fit pins 92, 94, are provided. The spatial arrangement of the press-fit pins 76, 78, 80, 82, 84, 86, 88, 90, 92, 94 is shown in the illustrations. Fig. 3 and Fig. 4 for more details.

[0028] According to the side view Fig. Figure 3 shows that a power module 12, depicted here from the outside, is mounted with its underside 120 on a cooling surface 106. Viewed in the Z-direction 54, a multifunctional frame 50 is located above the power module 12. On the top side of the in Fig. In the multifunction frame 50 shown from the side, the individual press-fit pins 76, 78, 80, 82, 84, 86, 88, 90, 92, 94 protrude vertically upwards – lying here in a plane of the drawing. The press-fit pins 76–94 allow for robust and simple electrical contact with the components located within the multifunction frame 50 or the power module 12 arranged below it. From the illustration according to Fig. Figure 3 further shows that the multi-function frame 50 represents a first level 60, while the power module 12 arranged below it in this case forms a second level 62. Similarly, in a modification of the representation according to Fig. 3 of the multi-function frames 50 are arranged above the power module 12 when viewed in the Z direction 54.

[0029] According to the representation Fig. Figure 4 shows an exploded view of the components contained in the multifunction frame 50.

[0030] Fig. Figure 4 shows that the phase bridge 136 can be electrically contacted via the seventh and eighth contact pins 88, 90. Furthermore, it shows Fig. 4, that in this embodiment a T+ bridge 134 (first contact surface 68) and a second T- bridge 138 (second contact surface 70) are arranged one above the other. Between these is an insulating layer 140, which can be made of paper, cardboard, or the like. The T+ bridge 134 also has contact strips 142 that lead to a cooling connection 150, as will be described below. Both components, T+ bridge 134 and T- bridge 138, are preferably arranged one above the other or next to each other at a minimal distance, so that the magnetic fields that arise when current flows cancel each other out. The smaller the distance that can be maintained between the T+ bridge 134 and the T- bridge 138, the more complete the cancellation of the magnetic fields against each other can be achieved.The press-fit pins 76, 78, 80, 84 serve for the electrical contacting of semiconductor components or for signal transmission and / or the contacting of the semiconductor components 42 arranged in the underlying power module 12.

[0031] According to the representation Fig. Figure 5 shows that the T+ bridge 134 (first contact surface 68) is located in the multifunctional frame 50 above the power module 12. The press-fit pins 76, 78, 80, 84 surrounding the T+ bridge 134 are installed such that they electrically contact semiconductor devices 42 arranged individually or in groups 64, 66 below the T+ bridge 134, preferably on a base 96 of the power module 12. The semiconductor devices 42 arranged on the base 96 of the power module 12 are semiconductor devices such as MOSFETs, IGBTs, and diodes, which, for example, serve as semiconductor switches.

[0032] One in the arrangement according to Fig. The T-bridge 138 (second contact surface 70) shown in the top view is electrically contacted, for example, via press-fit pins 88, 90 directly connected to it. Furthermore, in the area of ​​the T-bridge 138 (second contact surface 70), as shown in the illustration in Fig. 5 ninth and tenth press-fit pins 92, 94 are provided, via which semiconductor components 42 arranged individually or in groups 64, 66 below the T-bridge 138 (second contact surface 70) are electrically contacted. Fig. Figure 5 also shows the contact strips 142 extending downwards from the T+ bridge 134, which, according to the illustration in Fig. 8 cooling connections 150, 152 are shown. In Fig. 5 compensation openings 148 are located in the phase bridge 136 and in the T-bridge 138, through which excess solder can escape or flow away during the soldering process, depending on the soldering process being carried out.

[0033] According to the representation Fig. Figure 6 shows an enlarged scale representation of a superimposed arrangement of multifunctional frame 50, power module 12 and cooling surface 106.

[0034] Fig. Figure 6 shows that, in this enlarged illustration, the semiconductor devices 42, which may be, for example, MOSFETs or other transistors, are mounted on the base 96 of the power module 12. Its underside 120 is connected to the cooling surface 106 either via a planar sintered connection 104 or via a planar solder / adhesive connection 110. This arrangement allows for rapid heat dissipation of the semiconductor devices 42 on the base 96 of the power module 12, as the heat generated during operation can be quickly dissipated, thus preventing the semiconductor devices 42 from being exposed to overheating.

[0035] From the representation according to Fig. 6 further indicates that the electrical connection to the in Fig. The connection of the six T+ bridges 134 and T- bridges 138 (not shown) in the multifunctional frame 50 is achieved by means of a first solder connection 128 and a second solder connection 130. The two solder connections 128, 130 comprise first and second solder layers 122, 124. Furthermore, a first spacer 100 and a second, disc-shaped spacer 126 are integrated into the solder connections 128, 130. Alternatively, one of the spacers 100, 126 can be omitted; in this case, the second solder connection 130 can be eliminated.

[0036] The use of the first spacer 100 or the second spacer 126 advantageously enables the compensation of component tolerances or the compensation of manufacturing-related tolerances when joining the multifunctional frame 50 with the power module 12. The current-carrying components of the multifunctional frame 50 are connected to the semiconductor components 42 of the power module 12 in the Z-direction 54 via the solder connections 128, 130.

[0037] According to the representation Fig. It can therefore be seen from Figure 6 that the first solder joint 128, which preferably comprises a first solder layer 122, is formed in an opening 112 of the multifunctional frame 50. The first solder joint 128 connects this frame, or one of the T+ bridges 134 or T- bridges 138, to the first spacer 100. The second solder joint 130 encloses a second solder layer 124 and runs between the first spacer 100 and the top surface of the disk-shaped second spacer 126. This second spacer, in turn, is located on the contact surface 102 on the top surface of the semiconductor device 42.

[0038] By using the first and second spacers 100, 126, which can be configured in any geometry and height, component tolerances or manufacturing tolerances arising during joining can be easily compensated for, so that the overall height of the assembly consisting of the multifunctional frame 50, power module 12, and cooling surface 106, with the sintered connection 104 or the solder / adhesive connection 110 interposed, does not increase and can be kept essentially constant. The spacers 100, 126 also prevent excessive heat input into the semiconductor device 42 during the joining process, i.e., in this case, during soldering.

[0039] Fig. Figure 7 shows an enlarged representation of solder joints 128, 130.

[0040] The first solder joint 128 comprises a disk-shaped first spacer 100 and a second spacer 126. The first spacer 100 is attached to the underside of the phase bridge 136 by means of the first solder layer 122 and is metallurgically bonded to the second spacer 126 by means of a second solder layer 124. The second spacer 126 is attached to the contact surface 102 of the semiconductor device 42. The arrangement of the spacers 100 and 126 could also be reversed as shown in the illustration. Fig. 7. In addition to compensating for tolerances, the spacers 100, 126 serve to absorb and even out the energy input acting on the semiconductor component 42 during the material-joining process, in this case soldering.

[0041] Furthermore, it shows Fig. 7 the second solder joint 130. This comprises the first solder layer 122, with which the first spacer 100 is joined to the underside of the phase bridge 136. The first spacer 100 is located on the base 96 of the power module 12, so that the heat from the phase bridge 136 can be dissipated through the base surface 96 via the sintered joint 104 or the solder / adhesive joint 110 to the cooling surface 106. The same applies to another spacer 100 located in the plane of the drawing according to Fig. 4 horizontal cooling connection 150, via which the contact strip 142 of the T+ bridge 134 is connected in the same way to the base 96 of the power module 12 for heat dissipation.

[0042] According to the perspective section Fig. Figure 8 shows that both the phase bridge 136 and the superimposed T+ bridges 134 (first contact surface 68) and T- bridge 136 (second contact surface 70), which are separated by the insulation layer 140, have compensation openings 148. These allow excess solder, for example from the first solder layer 122, to escape, so that no stresses develop within the solder joints 128, 130 or the cooling connections 150, 152. Fig. Figure 8 further shows the contact strips 142 extending from the T+ bridge 134 (first contact surface 68), which are connected to the base 96 of the power module 12 and the cooling surface 106 connected to it for heat dissipation via cooling connections 150 and the first spacer 100. Between the phase bridge 136 and the base surface 96 lie the Fig. The eight solder connections 128, 130, shown only in simplified form, are between the phase bridge 136 and the semiconductor devices 42, and between the T-bridge 138 and the semiconductor devices 42, respectively. The insulating layer 140 can be a layer of paper or cardboard only a few tenths of a millimeter thick. The smaller the distance between the T+ bridge 134 and the T-bridge 138, the more complete the cancellation of the opposing magnetic fields can be achieved, resulting in a low-inductance connection that enables short switching times for the semiconductor devices 42.

[0043] Fig. Figure 9 shows a side view of the joined arrangement of the components of the multifunction frame 50 and the power module 12.

[0044] Fig. Figure 9 shows the sequence of first plumb lines 128 according to Fig. 7 between the underside of the phase bridge 136 and the base 96 of the power module 12. Furthermore, the side view shows according to Fig. 9 the T+ bridge 134 (first contact surface 68), which is insulated from the underlying T- bridge 138 (second contact surface 70) by the insulation layer 140. The distance between the T+ bridge 134 and the T- bridge 138 is minimized so that the magnetic fields that arise when current is flowing through them largely cancel each other out, resulting in a low-inductance connection. Between the underside of the T- bridge 138 and the base 96 of the power module 12 according to Fig. The second plumb lines 130 run along 9, as they do in Fig. Figure 7 is shown on an enlarged scale. Approximately in the center of the illustration according to Fig. 9 are located in the drawing plane according to Fig. 9 consecutive cooling connections 150, 152. Furthermore, the side view shows according to Fig. 9 the course of bond wires 146, both between the underside of the phase bridge 136 and the base surface 96, and between the latter and the underside of the T-bridge 138 in the right part of Fig. 9. The underside of the power module 12 as shown in Fig. 9 is joined to the cooling surface 106 over a surface area via the sintered layer 104 or the solder / adhesive bond 110, so that the heat generated during operation of the semiconductor components 42, which are arranged on the base 96 of the power module 12, can be dissipated quickly and over-temperature stress on these components is prevented. Above the first solder joints 128 and above the second solder joints 130, compensation openings 148 are embedded in the phase bridge 136 and also in the T-bridge 138, which allow excess solder material to escape, so that the solder joints 128, 130 can be formed essentially stress-free.

[0045] According to the representation Fig. Figure 10 shows a variant design in which a vertical guidance of current-carrying components, in particular the T+ bridge 134 as well as the T- bridge 138, is implemented.

[0046] As seen from the view according to Fig. As can be seen from Figure 10, semiconductor components 42 are connected here via second spacers 126 to the current-carrying components running vertically 156 above them, in particular the T+ bridge 134 and the one extending parallel to it into the plane of the drawing according to Fig. The 10-extending T-bridge 138 is electrically contacted. In this case, for example, in contrast to the Fig. 8 and Fig. 9 a vertical position of the T+ bridge 134 and the T- bridge 138 relative to each other, whereby also in the formation of the vertical guide 156 according to Fig. 10. A minimum distance between the aforementioned components is ensured, so that in the case of current flow in the T+ bridge 134 or in the T- bridge 138, the resulting magnetic fields cancel each other out, resulting in a low-inductance connection. The arrangement according to Fig. The power module 12 comprises 10, on the base of which 96 semiconductor components 42 are arranged. The power module 12, in turn, is thermally connected to the cooling surface 106 for the dissipation of operating heat via the sintered layer 104 or alternatively via a planar solder / adhesive bond 110.

[0047] The invention is not limited to the embodiments described here and the aspects highlighted therein. Rather, within the scope specified by the claims, a multitude of modifications are possible that fall within the bounds of what is considered skilled in the art. QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] DE 11 2017 004 390 T5

[0003] DE 10 2014 219 998 B4

[0004] EP 2 418 925 B1

[0005]

Claims

[1] Power module (12) with a circuit carrier (14) comprising a carrier substrate (40) and an electrical insulation layer (16), wherein the circuit carrier (14) has a first conductor structure (18) with an external contact area (18.2) and at least one second conductor structure (20A, 20B) with at least one external contact area (20A.2, 20B.2) and a further, third conductor structure (22) comprising at least one external contact area (22.2), with semiconductor components (42) arranged individually or in groups (64, 66), characterized by in that contact surfaces (68, 70) arranged in a multifunctional frame (50) assigned to the power module (12) are electrically connected to semiconductor components (42) installed individually or in groups (64, 66) in the power module (12) by solder connections (128, 130) including at least one spacer (100, 126). [2] Power module (12) according to claim 1, characterized bythat the semiconductor components (42) are arranged individually or in groups (64, 66) on a base (96) of the power module (12). [3] Power module (12) according to claims 1 to 2, characterized by that the first spacer (100) is arranged in the region of a joint (98) between a bottom side (120) of the multifunctional frame (50) and a top side of the power module (12). [4] Power module (12) according to claim 3, characterized by that the first solder connection (128) lies in an opening (112) on the underside (120) of the multifunctional frame (50). [5] Power module (12) according to claims 1 and 2, characterized by that the second spacer (126) is arranged on a contact surface (102) of the semiconductor component (42). [6] Power module (12) according to claim 5, characterized by that the second solder connection (130) is made between the first spacer (100) and the second spacer (126). [7] Power module (12) according to claims 1 to 6, characterized by that the solder connections (128, 130) have a first and a second solder layer (122, 124). [8] Power module (12) according to claims 1 to 7, characterized by that the power module (12) is connected to a cooling surface (106) either via a sintered layer (104) or via a solder / adhesive connection (110). [9] Power module (12) according to claims 1 to 8, characterized by that the semiconductor components (42) and the second spacers (126) connected to them via contact surfaces (102) are enclosed by a molding compound (108). [10] Power module (12) according to claims 1 to 9, characterized by that the multifunctional frame (50) is arranged above or below the power module (12) as seen in the Z direction (54). [11] Power module (12) according to claims 1 to 10, characterized bythat in the multifunctional frame (50) current-carrying components, in particular a T+ bridge (134) and a T- bridge (138) are formed one above the other or next to each other, such that a low-inductive connection is formed.

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