Semiconductor devices with bent polyimide tape and associated manufacturing processes

Abstract

Semiconductor device, comprising: an electrically conductive carrier (2); a semiconductor chip (8) arranged over a section (4) of the carrier (2); and a dielectric material arranged between the support section (4) and the semiconductor chip (8), wherein the dielectric material galvanically isolates the support section (4) and the semiconductor chip (8) from each other, wherein the dielectric material comprises a polyimide tape (10), wherein an edge region of the polyimide tape (10) is bent away from the support section (4), wherein the semiconductor device further comprises a die-attach film (24) arranged on the polyimide tape (10), wherein the die-attach film (24) has a lower adhesion strength at the curved edge region of the polyimide tape (10) than next to the curved edge region.

Description

Technical field

[0001] The present disclosure relates to semiconductor devices with bent polyimide tape and methods for manufacturing such semiconductor devices. background

[0002] In semiconductor devices, high electrical voltage differences can occur between individual device components during operation. For example, increased electrical potential differences can arise in a current sensor between a busbar and a sensor chip positioned above it. Depending on material properties and the relative arrangement of the device components, these increased voltage differences can lead to extremely high electric field strengths in certain spatial regions of the device. Device components located in these regions can be subject to wear due to the high electric field strengths, which in the worst case can lead to device failure.

[0003] Manufacturers and developers of semiconductor devices are constantly striving to improve their products. Extending the lifespan of these devices and ensuring their continuous, reliable operation can be of particular interest. Furthermore, providing efficient and cost-effective methods for manufacturing such semiconductor devices can be of interest.

[0004] In US2016079143 A1, a heat spreader has a sloping surface or a C-surface, which is a chamfered portion on an outer circumferential end part of a rear surface therein. US2014353814A1 describes a semiconductor device that incorporates a heat spreader and has been improved to prevent dielectric breakdown. US2022404440A1 shows a current sensor with a current rail and a magnetic field sensor. Brief description

[0005] Several aspects concern a semiconductor device. The semiconductor device comprises an electrically conductive substrate, a semiconductor chip arranged over a section of the substrate, and a dielectric material positioned between the substrate section and the semiconductor chip. The dielectric material galvanically isolates the substrate section and the semiconductor chip from each other. The dielectric material comprises a polyimide tape, with an edge region of the polyimide tape bent away from the substrate section.

[0006] Several aspects relate to a method for manufacturing a semiconductor device. The method comprises providing an electrically conductive substrate and applying a dielectric material to a section of the substrate. Applying the dielectric material includes forming a polyimide tape with an edge region bent away from the substrate section. The method further comprises placing a semiconductor chip over the dielectric material, the dielectric material galvanically isolating the substrate section and the semiconductor chip from each other. Brief description of the drawings

[0007] Devices and methods according to the disclosure are explained in more detail below with reference to the drawings. The same reference numerals may denote identical or similar components. The features of the various examples shown may be combined with one another, provided they are not mutually exclusive, and / or they may be selectively omitted if they are not described as absolutely necessary. Fig. Figure 1 shows a side sectional view of a semiconductor device 100 according to the disclosure. Fig. Figure 2 shows a flowchart of a process for manufacturing a semiconductor device according to the disclosure. Fig. 3 contains the Fig. 3A and Fig. 3B, where the Fig. Figure 3A shows a side sectional view of a semiconductor device 300 according to the disclosure and the Fig. 3B a top view of a polyimide tape as it may be contained in the semiconductor device 300. Fig. 4 contains the Fig. 4A and Fig. 4B, where the Fig. Figure 4A shows a side sectional view of a semiconductor device 400 according to the disclosure and the Fig. 4B a top view of a polyimide tape as it may be contained in the semiconductor device 400. Fig. 5 contains the Fig. 5A and Fig. 5B, where the Fig. Figure 5A shows a side sectional view of a semiconductor device 500 according to the disclosure and the Fig. 5B a top view of part of the semiconductor device 500. Fig. Figure 6 shows a side sectional view of a semiconductor device 600 according to the disclosure. Detailed description

[0008] The semiconductor device 100 of the Fig. The semiconductor device 100 can comprise an electrically conductive support 2 with a first section 4 and a second section 6. A semiconductor chip 8 can be arranged above the first support section 4. The semiconductor device 100 can further comprise a dielectric material 10 arranged between the first support section 4 and the semiconductor chip 8. The dielectric material 10 can be designed to galvanically isolate the first support section 4 and the semiconductor chip 8 from each other. The dielectric material 10 can be a polyimide tape or include one, with an edge region of the polyimide tape 10 bent away from the first support section 4. The semiconductor chip 8 can optionally be electrically connected to the second section 6 of the support 2 via an electrical connection element 12. The components of the semiconductor device 100 can optionally be at least partially encapsulated in an encapsulation material 14.

[0009] In the example shown, the electrically conductive support 2 can be a leadframe. The leadframe 2 can be made of a metal and / or a metal alloy, in particular of at least one of copper, copper alloys, nickel, iron-nickel, aluminum, aluminum alloys, steel, stainless steel, or the like. During operation of the semiconductor device 100, the first support section 4 can be a current-carrying section. In particular, in the example shown, the first section 4 of the leadframe 2 can be a busbar designed to carry an electric current to be detected or measured by the semiconductor chip 8. The terms "first support section," "current-carrying section," and "busbar" can be used interchangeably in the following. In particular, the busbar 4 can be formed or manufactured as a single piece.The second section 6 of the leadframe 2 can have one or more leads (or lead fingers, pins, or connecting conductors). In the side sectional view of the... Fig. Only one Lead 6 is visible due to the chosen perspective. Any number of additional Leads 6 could be located behind the Lead 6 shown, for example.

[0010] In one example, the semiconductor chip 8 can be a sensor chip designed to detect a magnetic field generated by an electric current flowing through the current rail 4. Based on the detected magnetic field (or the detected magnetic flux density of the induced magnetic field), the strength of the electric current can be determined. In particular, the induced magnetic field can be measured without physical contact between the sensor chip 8 and the current rail 4 (i.e., galvanically isolated). In such a case, the sensor chip 8 (or more precisely, at least one sensor element of the sensor chip 8) can overlap the current rail 4, at least partially, in the z-direction. The physical signals detected by the sensor chip 8 can be converted into electrical signals and transmitted via the electrical connection element 12 and the lead 6 to other components (not shown) for further processing or evaluation.In the example shown, the electrical connecting element 12 can correspond to or contain a wire. Alternatively, or additionally, in other examples the electrical connecting element 12 can contain a clip, a strap, or the like.

[0011] The sensor chip 8 can have one or more sensor elements (not shown). In one example, the sensor chip 8 can be a differential magnetic field sensor chip with two sensor elements. In general, the sensor chip 8 and its sensor element(s) are not limited to a specific sensor technology. For example, a sensor element of the sensor chip 8 can be a Hall sensor element, a magnetoresistive sensor element, a vertical Hall sensor element, or a fluxgate sensor element. A magnetoresistive xMR sensor element can be an AMR (anisotropic magneto-resistive) sensor element, a GMR (giant magneto-resistive) sensor element, or a TMR (tunnel magneto-resistive) sensor element. In one example, the sensor element(s) can be located on the top side of the sensor chip 8, facing away from the power rail 4. In other examples, the sensor element(s) can be located on the top side of the sensor chip 8, facing away from the power rail 4.The sensor elements can be arranged on the underside of the sensor chip 8 facing the current rail 4.

[0012] The polyimide tape 10 can galvanically isolate the sensor chip 8 and the busbar 4 from each other. An edge of the polyimide tape 10 may be bent away from the busbar 4. This can result in a gap between the edge and the top surface of the busbar 4. For illustration, the following is shown in the Fig. Figure 1 shows a distance d between the top surface of the busbar 4 and the underside of the edge region of the polyimide tape 10. In particular, the entire edge of the polyimide tape 10 can be bent away from the busbar 4. In such a case, the entire edge of the polyimide tape 10 can then be spaced away from the busbar 4. The polyimide tape 10 can thus be shaped in a trough-like or bowl-like form. Viewed in the z-direction, the base of the polyimide tape 10 can have any suitable shape, for example, round, oval, elliptical, square, rectangular, polygonal, or similar. In the example shown, the polyimide tape 10 can project at least partially beyond the right edge of the busbar 4.

[0013] The thickness of the dielectric material, or polyimide tape 10, can be selected depending on the application of the semiconductor device 100. On the one hand, the thickness t of the polyimide tape 10 can be chosen to be small enough so that the magnetic field generated by a measuring current at the location of the sensor element is strong enough for measurement by the sensor chip 8. On the other hand, the thickness t of the polyimide tape 10 can be chosen to be large enough so that the electrical insulation provided by the dielectric material between the busbar 4 and the sensor chip 8 is sufficiently high. For example, the thickness t of the polyimide tape 10 can be in the range of approximately 20 micrometers to approximately 200 micrometers. In specific, but by no means limiting, examples, the polyimide tape 10 can have a thickness t of approximately 50 micrometers, approximately 75 micrometers, or approximately 125 micrometers.The polyimide tape 10 can contain or be made from any suitable polyimide, for example Kapton® and / or Upilex®.

[0014] The encapsulation material 14 can at least partially encapsulate one or more components of the semiconductor device 100. In particular, the busbar 4 and the semiconductor chip 8 can be at least partially embedded in the encapsulation material 14. The encapsulation material 14 can be positioned between the busbar 4 and the curved edge region of the polyimide tape 10. The encapsulation material 14 can form a housing (or package) for the encapsulated device components to protect them from external influences, such as mechanical stress, chemical contamination, moisture, light exposure, or the like. The semiconductor device 100 can also be referred to as a semiconductor package. The leads 6 can protrude at least partially from the encapsulation material 14, allowing the semiconductor chip 8 to be electrically accessible from outside the encapsulation material 14.Similarly, the busbar 4 can protrude at least partially from the encapsulation material 14 to provide an input and output for a measuring current.

[0015] The encapsulation material 14 can contain or be made from at least one of an epoxy, a filled epoxy, a glass fiber-filled epoxy, an imide, a thermoplastic, a thermosetting polymer, a polymer mixture, a laminate, or the like. Various techniques can be used to encapsulate the device components with the encapsulation material 14, for example, at least one of compression molding, injection molding, powder molding, liquid molding, map molding, laminating, or the like.

[0016] During operation of the semiconductor device 100, the electrical potential of the busbar 4 can differ from the electrical potential of the semiconductor chip 8. For example, the busbar 4 can be in a high-voltage range, while the semiconductor chip 8 (and the leads 6 electrically connected to it) can be in a low-voltage range. A low-voltage range can be associated with, or specified by, an exemplary range of values ​​from approximately 0 V to approximately 20 V. In this context, exemplary operating values ​​of a low-voltage range could be approximately 3.3 V or approximately 5 V. A high-voltage range can be associated with, or specified by, an exemplary range of values ​​from approximately 50 V to approximately 15,000 V. In this context, exemplary operating values ​​of a high-voltage range could be approximately 600 V, approximately 800 V, or approximately 1200 V.In a non-restrictive example, the electrical potential of the semiconductor chip 8 can be around 0V, while the electrical potential of the busbar 4 can be around 1000V.

[0017] Accordingly, during operation of the semiconductor device, 100 large electrical potential differences can occur between the busbar 4 and the semiconductor chip 8. These electrical potential differences can reach values ​​of up to 1000 V or more. Galvanic isolation between the busbar 4 and the semiconductor chip 8 can be provided by the dielectric material 10 placed between them. In this context, a capacitor (or plate capacitor) can be formed, with the busbar 4 and the semiconductor chip 8 each forming an electrode of the capacitor, and the dielectric material 10 forming a solid insulator between these electrodes.

[0018] Since the dielectric material 10 has electrical insulating properties, high electric field strengths (or high inhomogeneous electric field peaks) can occur in certain spatial regions of the semiconductor device 100. The materials located in these regions can be subjected to high electrical voltages, which can be particularly problematic for materials with limited insulating properties. High electrical stress can lead to accelerated aging of the materials. In particular, electrical treeing can occur during the aging process of the semiconductor device 100. In general, electrical treeing can occur and propagate when a dielectric material is exposed to high and diverging electric field voltages over a prolonged period.Electrical treeing typically begins at corners and / or edges of the semiconductor chip and / or a leadframe of the respective semiconductor device. It can ultimately lead to the formation of one or more unwanted breakdown paths between the semiconductor chip and the power rail, which in the worst case can result in the failure of the semiconductor device 100. In the . Fig. Figure 1 shows an exemplary breakdown path 16 represented by a dashed line running between the semiconductor chip 8 and the power rail 4.

[0019] The curved edge of the polyimide tape 10 can be designed to increase the length of a (potential) breakdown path between the semiconductor chip 8 and the busbar 4. In the semiconductor device 100, the breakdown path 16 would be shorter if the polyimide tape 10 were not curved but completely flat. The curved tape edge thus increases the electrical insulation provided by the polyimide tape 10 and / or its high-voltage resistance. Furthermore, the encapsulation material 14 arranged in the gap between the busbar 4 and the curved edge of the polyimide tape 10 can further enhance the electrical insulation between the busbar 4 and the semiconductor chip 8. In addition to lengthening potential breakdown paths, the curved shape of the polyimide tape 10 can also reduce electric field strength at its edge.As a result, electrical breakdowns and / or electrical treeing can be prevented or at least reduced by the polyimide tape 10 (and especially by its curved shape).

[0020] In the example of the Fig. Figure 1 describes the use of the bent polyimide tape 10 in the case of a magnetic current sensor with a current rail 4 and a sensor chip 8. It should be noted that the concepts presented here can also be applied to other semiconductor devices where high electrical potential differences may occur during operation. Examples include gate drivers, isolated drivers, digital isolators, auxiliary power components, or similar devices.

[0021] Fig. Figure 2 shows a method for manufacturing a semiconductor device according to the disclosure. The method is presented in a general form to qualitatively specify aspects of the disclosure. The method can, for example, be used to manufacture the semiconductor device 100 of the Fig. 1 to produce and can therefore be used in connection with the Fig. 1. The procedure can be extended to include aspects described in connection with other examples discussed herein. Exemplary extensions of the procedure are found in connection with the Fig. 3 to 5 described.

[0022] In step 18, an electrically conductive support can be provided. In step 20, a dielectric material can be applied to a section of the support. This application of the dielectric material can involve forming a polyimide tape with an edge region bent away from the support section. In step 24, a semiconductor chip can be placed over the dielectric material. The dielectric material can galvanically isolate the support section and the semiconductor chip from each other.

[0023] The semiconductor device 300 of the Fig. 3A can have some or all of the features of the semiconductor device 100 of the Fig. 1. The semiconductor device 300 can have a die-attach film (DAF) 24, which can be arranged on the underside of the polyimide tape 10. The die-attach film 24 can have a lower adhesive strength at the curved edge region of the polyimide tape 10 than next to the curved edge region.

[0024] From above, the Fig. Figure 3B shows an exemplary embodiment of a polyimide tape 10 with a die-attach film 24, as it may be contained in the semiconductor device 300. The die-attach film 24 can have an edge region 26 with a first adhesive strength and an inner region 28 with a second adhesive strength, wherein the first adhesive strength may be lower than the second. In the example shown, the edge region 26 and the inner region 28 can have the shape of a rectangular frame and a rectangle, respectively. In other examples, however, the shapes of the two regions 26 and 28 can also be chosen differently.

[0025] The semiconductor device 300 can, for example, be manufactured using the method of Fig. 2, which can be extended in this context as follows. First, a die-attach film 24 (or a dicing die-attach film (D-DAF)) can be arranged (e.g., laminated) on a polyimide tape 10. The die-attach film 24 can, for example, be a double-sided adhesive film, i.e., the polyimide tape 10 itself does not necessarily have to be adhesive. Subsequently, the adhesive strength of the initially uniformly adhesive die-attach film 24 can be reduced in a variety of edge regions 26. In one example, the die-attach film 24 can be processed with laser light 30 for this purpose, as in the Fig. 3B indicated. By means of a laser-induced thermal pulse, the material of the die-attach film 24 can be at least partially cured in the frame-shaped edge regions 26, which can reduce the adhesion.

[0026] In a further step, the polyimide tape 10 with the die-attach film 24 arranged on it can then be separated (e.g., sawn) into a multitude of structures. A single such structure is in the Fig. 3B is shown and can then be glued to the first carrier section 4 using the die-attach film 24. The semiconductor chip 8 can then be positioned on the polyimide tape 10 and electrically connected to the lead 6 via the electrical connecting element 12. In a further step, the first carrier section 4 and the semiconductor chip 8 can be encapsulated with the encapsulation material 14. Due to the reduced adhesive strength in the edge region 26, the encapsulation material 14 can penetrate between the first carrier section 4 and the polyimide tape 10, thereby bending the edge region of the polyimide tape 10 away from the first carrier section 4. In a molding process, the polyimide tape 10 can be bent upwards at its edges simply by the flow of the molding material.

[0027] Optionally, one or more openings (not shown) can be formed in the first support section 4 before the encapsulation process. For example, the first support section 4 can be structured by one or more cut-outs. During encapsulation, the encapsulation material 14 can then flow from below through the openings, pushing the edge region of the polyimide tape 10 upwards and away from the first support section 4. In the fabricated semiconductor device, the openings can thus be arranged below the bent edge region of the polyimide tape 10. The encapsulation material 14 can be positioned within the openings.

[0028] The semiconductor device 400 of the Fig. 4A can have some or all of the features of previously described semiconductor devices. The semiconductor device 400 can include a material layer 32, which can be located at the edge region of the polyimide tape 10. The material layer 32 and the polyimide tape 10 can have different coefficients of thermal expansion.

[0029] From above, the Fig. Figure 4B shows an exemplary embodiment of a polyimide tape 10 with a material layer 32, as it may be contained in the semiconductor device 400. The material layer 32 can be arranged at an edge region 34 of the polyimide tape 10. In one example, the coefficient of thermal expansion of the material layer 32 can be greater than the coefficient of thermal expansion of the polyimide tape 10. In the case shown, the material layer 32 can have the exemplary shape of a rectangular frame. The material layer 32 can contain or be made of at least one polyimide, a polyimide with additives, a polyolefin, or the like. The material layer 32 can, for example, be an adhesive film. The thickness of the material layer 32 can be less than the thickness of the polyimide tape 10 and may be in the range of a few micrometers.

[0030] The semiconductor device 400 can, for example, be manufactured using the method of Fig. 2, which in this context can be extended as follows. In one example, the material layer 32 can be selectively formed on the polyimide tape 10 at the edge region 34. Alternatively, the material layer 32 can first be applied to a larger area of ​​the polyimide tape 10 and then suitably structured, for example by a photolithography process. After the application of the material layer 32, the edge region of the polyimide tape 10 can bend due to a bimetallic effect when the temperature changes, due to the different coefficients of thermal expansion of the polyimide tape 10 and the material layer 32. In one example, the material layer 32 can first be applied to the polyimide film 10 at an elevated temperature. Subsequently, the polyimide film 10 can bend upon cooling due to the different coefficients of thermal expansion.

[0031] In another example, instead of a single polyimide tape 10, two tapes (e.g., polyimide tapes) with different coefficients of thermal expansion can be applied (e.g., laminated) to the first support section 4. The upper of the two tapes can be suitably structured, for example, by a photolithography process. In one example, the tapes can first be laminated at an elevated temperature. Subsequently, the two tapes bonded together can bend upon cooling due to their different coefficients of thermal expansion, according to a bimetallic effect.

[0032] The semiconductor device 500 of the Fig. 5A can have some or all of the features of previously described semiconductor devices. The semiconductor device 500 can include one or more support structures 36 arranged between the first support section 4 and the bent edge region of the polyimide tape 10. The support structures 36 can be configured to bend the edge region of the polyimide tape 10 away from the first support section 4.

[0033] From above, the Fig. Figure 5B shows a possible exemplary design of the support structures 36. In practice, the [structures shown in the] Fig. The components shown in 5B are covered by the encapsulation material 14 and are therefore not visible. In the exemplary top view of the Fig. 5B The support structures 36 can have both circular and elongated shapes. The number and shapes of the support structures 36 can be chosen arbitrarily, as long as the edge region of the polyimide tape 10 is appropriately bent away from the first support section 4. In another case, for example, a single frame-shaped support structure can extend along the edge region of the polyimide tape 10. In yet another case, such a support structure can be interrupted at one or more points. The support structure 36 can be made of any suitable material, for example, an adhesive (especially an epoxy resin-based one). The thickness of the support structure 36 in the z-direction can, for example, be in the range of approximately 10 micrometers to approximately 20 micrometers.

[0034] The semiconductor device 500 can, for example, be manufactured using the method of Fig. 2, which in this context can be extended as follows. First, the support structure 36 can be arranged on the first support section 4. Subsequently, the polyimide tape 10 can be arranged on the support structure 36, with the edge region of the polyimide tape 10 being bent away from the first support section 4 by the support structure 36. In one example, the arrangement of the support structure 36 can involve applying an adhesive (especially an epoxy resin-based one) to the first support section 4. The adhesive can be applied, for example, by an inkjet process and / or a dispensing process.

[0035] The semiconductor device 600 of the Fig.The semiconductor device 600 can have some or all of the features of previously described semiconductor devices. The semiconductor device 600 can include a dielectric layer 38 arranged between the first support section 4 and the polyimide tape 10. In one example, the dielectric layer 38 can contain or be made of a polyimide (e.g., Kapton® and / or Upilex®). Viewed in the z-direction, a base area of ​​the dielectric layer 38 can lie within a base area of ​​the polyimide tape 10. The dielectric layer 38 can enable or facilitate the encapsulation material 14 entering the space between the first support section 4 and the polyimide tape 10 during the encapsulation process and bending the polyimide tape 10 upwards at its edges. In the example shown, the semiconductor device 600 can have a single dielectric layer 38.In other examples, a stack of several dielectric layers can be arranged between the first support section 4 and the polyimide tape 10. These layers can be made of the same material or of different materials.

[0036] The semiconductor devices described herein, as disclosed, can provide various technical effects. However, the following list is not exhaustive. A person skilled in the art may identify further technical effects from the present description.

[0037] Using bent polyimide tape can prevent electrical breakdowns and / or electrical treeing. This can lead to longer lifetimes for semiconductor devices. The reliability of the semiconductor devices can be increased, thus ensuring compliance with current and future standards (e.g., IEC standards).

[0038] Due to the small thickness of the polyimide tape (with simultaneously high electrical strength), the sensor chip positioned over the polyimide tape can provide a strong measurement signal.

[0039] The polyimide tape, bent at the edges, provides cost-effective electrical insulation between high- and low-voltage areas in the semiconductor devices described herein. Compared to conventional solutions, both the cost of the materials used and the costs of the methods described herein can be lower.

[0040] The semiconductor devices described herein can be, for example, current sensors used to operate highly efficient motor drives. Such use can reduce the energy consumption of these motors while maintaining or even increasing their power output. The reduced energy consumption of the motors can, in particular, result in reduced CO2 emissions. Overall, the semiconductor devices described herein can therefore contribute to green technology and green energy solutions, i.e., climate-friendly solutions with reduced energy consumption. Examples

[0041] The following describes semiconductor devices according to the disclosure and associated manufacturing processes by means of examples.

[0042] Example 1 is a semiconductor device comprising: an electrically conductive support; a semiconductor chip arranged over a section of the support; and a dielectric material arranged between the support section and the semiconductor chip, wherein the dielectric material galvanically insulates the support section and the semiconductor chip from each other, wherein the dielectric material comprises a polyimide tape, wherein an edge region of the polyimide tape is bent away from the support section.

[0043] Example 2 is a semiconductor device according to Example 1, wherein the carrier section is a current-carrying section during operation of the semiconductor device.

[0044] Example 3 is a semiconductor device according to Example 1 or 2, wherein the carrier section is located in a high-voltage area during operation of the semiconductor device and the semiconductor chip is located in a low-voltage area.

[0045] Example 4 is a semiconductor device according to any of the preceding examples, wherein: the support is a leadframe, the support section is a busbar, and the semiconductor chip is a sensor chip designed to detect a magnetic field generated by an electric current flowing through the busbar.

[0046] Example 5 is a semiconductor device according to one of the preceding examples, wherein the curved edge region of the polyimide tape is designed to increase the length of a breakdown path between the semiconductor chip and the support section.

[0047] Example 6 is a semiconductor device according to one of the preceding examples, wherein the polyimide tape is shaped like a trough.

[0048] Example 7 is a semiconductor device according to one of the preceding examples, wherein the polyimide tape has a thickness in the range of 20 micrometers to 200 micrometers.

[0049] Example 8 is a semiconductor device according to any of the preceding examples, further comprising: a die-attach film arranged on the polyimide tape, wherein the die-attach film has a lower adhesion strength at the curved edge region of the polyimide tape than next to the curved edge region.

[0050] Example 9 is a semiconductor device according to any of the preceding examples, further comprising: a material layer arranged at the edge region of the polyimide tape, wherein the material layer and the polyimide tape have different coefficients of thermal expansion.

[0051] Example 10 is a semiconductor device according to any of the preceding examples, further comprising: a support structure arranged between the carrier section and the bent edge region of the polyimide tape, designed to bend the edge region of the polyimide tape away from the carrier section.

[0052] Example 11 is a semiconductor device according to one of the preceding examples, wherein the dielectric material arranged between the support section and the semiconductor chip further comprises: a dielectric layer arranged between the support section and the polyimide tape, wherein a base area of ​​the dielectric layer lies within a base area of ​​the polyimide tape.

[0053] Example 12 is a semiconductor device according to any of the preceding examples, further comprising: an encapsulation material that at least partially encapsulates the semiconductor chip and the support section, wherein the encapsulation material is arranged between the support section and the edge region of the polyimide tape.

[0054] Example 13 is a semiconductor device according to Example 12, wherein the support section has at least one opening located below the curved edge region of the polyimide tape, wherein the encapsulation material is located in the at least one opening.

[0055] Example 14 is a method for manufacturing a semiconductor device, the method comprising: providing an electrically conductive support; arranging a dielectric material on a section of the support, wherein the arranging of the dielectric material comprises: forming a polyimide tape with an edge region bent away from the support section; and arranging a semiconductor chip over the dielectric material, wherein the dielectric material galvanically isolates the support section and the semiconductor chip from each other.

[0056] Example 15 is a method according to Example 14, wherein forming the bent polyimide tape comprises: applying a die-attach film to the polyimide tape, wherein the die-attach film has a lower adhesion strength at the edge region of the polyimide tape than next to the edge region; and encapsulating the support section and the semiconductor chip with an encapsulation material, wherein the encapsulation material penetrates between the support section and the edge region of the polyimide tape, bending the edge region of the polyimide tape away from the support section.

[0057] Example 16 is a method according to Example 15, further comprising: processing the die-attach film with laser light, wherein the adhesion of the die-attach film is reduced at the edge area of ​​the polyimide tape.

[0058] Example 17 is a method according to Example 15 or 16, further comprising: forming at least one opening in the carrier section, wherein the encapsulation material penetrates the at least one opening during encapsulation and bends the edge region of the polyimide tape away from the carrier section.

[0059] Example 18 is a method according to any of Examples 14 to 17, wherein forming the bent polyimide tape comprises: forming a material layer at the edge region of the polyimide tape, wherein the material layer and the polyimide tape have different coefficients of thermal expansion, and wherein, upon a temperature change, the edge region of the polyimide tape is bent away from the support section due to the different coefficients of thermal expansion.

[0060] Example 19 is a method according to Example 18, wherein forming the material layer includes: structuring the material layer by a photolithography process.

[0061] Example 20 is a method according to any of Examples 14 to 19, wherein forming the bent polyimide tape comprises: arranging a support structure on the carrier section, and arranging the polyimide tape on the support structure, wherein the edge region of the polyimide tape is bent away from the carrier section by the support structure.

[0062] Example 21 is a method according to Example 20, wherein the arrangement of the support structure comprises: applying an epoxy resin-based adhesive to the carrier section by an inkjet process and / or a dispense process.

Claims

[1] Semiconductor device comprising: an electrically conductive carrier (2); a semiconductor chip (8) arranged over a section (4) of the carrier (2); and a dielectric material arranged between the support section (4) and the semiconductor chip (8), wherein the dielectric material galvanically isolates the support section (4) and the semiconductor chip (8) from each other, wherein the dielectric material comprises a polyimide tape (10), wherein an edge region of the polyimide tape (10) is bent away from the support section (4), wherein the semiconductor device further comprises a die-attach film (24) arranged on the polyimide tape (10), wherein the die-attach film (24) has a lower adhesion strength at the curved edge region of the polyimide tape (10) than next to the curved edge region. [2] Semiconductor device according to claim 1, wherein the carrier section (4) is a current-carrying section during operation of the semiconductor device. [3] Semiconductor device according to claim 1 or 2, wherein the carrier section (4) is located in a high voltage area during operation of the semiconductor device and the semiconductor chip (8) is located in a low voltage area. [4] Semiconductor device according to any one of the preceding claims, wherein: the carrier (2) is a leadframe, the support section (4) is a conductor rail, and the semiconductor chip (8) is a sensor chip designed to detect a magnetic field generated by an electric current flowing through the busbar. [5] Semiconductor device according to one of the preceding claims, wherein the curved edge region of the polyimide tape (10) is designed to increase the length of a breakdown path (16) between the semiconductor chip (8) and the support section (4). [6] Semiconductor device according to one of the preceding claims, wherein the polyimide tape (10) is shaped in a trough shape. [7] Semiconductor device according to one of the preceding claims, wherein the polyimide tape (10) has a thickness in the range of 20 micrometers to 200 micrometers. [8] Semiconductor device according to any one of the preceding claims, further comprising: a material layer (32) which is arranged at the edge region of the polyimide tape (10), wherein the material layer (32) and the polyimide tape (10) have different coefficients of thermal expansion. [9] Semiconductor device according to any one of the preceding claims, further comprising: a support structure (36) arranged between the carrier section (4) and the bent edge region of the polyimide tape (10), which is designed to bend the edge region of the polyimide tape (10) away from the carrier section (4). [10] Semiconductor device according to one of the preceding claims, wherein the dielectric material arranged between the support section (4) and the semiconductor chip (8) further comprises: a dielectric layer (38) arranged between the carrier section (4) and the polyimide tape (10), wherein a base area of ​​the dielectric layer (38) lies within a base area of ​​the polyimide tape (10). [11] Semiconductor device according to any one of the preceding claims, further comprising: an encapsulation material (14) that at least partially encapsulates the semiconductor chip (8) and the support section (4), wherein the encapsulation material (14) is arranged between the support section (4) and the edge region of the polyimide tape (10). [12] Semiconductor device according to claim 11, wherein the carrier section (4) has at least one opening which is arranged below the curved edge region of the polyimide tape (10), wherein the encapsulation material (14) is arranged in the at least one opening. [13] Method for manufacturing a semiconductor device, the method comprising: Providing an electrically conductive carrier (2); Arranging a dielectric material on a section (4) of the support (2), wherein the arrangement of the dielectric material comprises: Forming a polyimide tape (10) with an edge region bent away from the carrier section (4); and Arranging a semiconductor chip (8) over the dielectric material, wherein the dielectric material galvanically isolates the support section (4) and the semiconductor chip (8) from each other, comprising forming the bent polyimide tape (10): Forming a material layer (32) at the edge region of the polyimide tape (10), wherein the material layer (32) and the polyimide tape (10) have different coefficients of thermal expansion, wherein the edge region of the polyimide tape (10) is bent away from the support section (4) when the temperature changes due to the different coefficients of thermal expansion. [14] Method according to claim 13, wherein forming the bent polyimide tape (10) comprises: Arranging a die-attach film (24) on the polyimide tape (10), wherein the die-attach film (24) has a lower adhesive strength at the edge region of the polyimide tape than next to the edge region; and Encapsulating the carrier section (4) and the semiconductor chip (8) with an encapsulation material (14), wherein the encapsulation material (14) penetrates between the carrier section (4) and the edge region of the polyimide tape (10) and bends the edge region of the polyimide tape (10) away from the carrier section (4). [15] The method of claim 14, further comprising: Processing the die-attach film (24) with laser light (30), thereby reducing the adhesive strength of the die-attach film (24) at the edge of the polyimide tape (10). [16] Method according to claim 14 or 15, further comprising: Forming at least one opening in the carrier section (4), wherein the encapsulation material (14) penetrates the at least one opening during encapsulation and bends the edge region of the polyimide tape (10) away from the carrier section (4). [17] Method according to claim 13, wherein forming the material layer (32) comprises: Structuring the material layer (32) by a photolithography process. [18] Method according to any one of claims 13 to 17, wherein forming the bent polyimide tape (10) comprises: Arranging a support structure (36) on the support section (4), and Arranging the polyimide tape (10) on the support structure (36), wherein the edge region of the polyimide tape (10) is bent away from the carrier section (4) by the support structure (36). [19] Method according to claim 18, wherein the arrangement of the support structure (36) comprises: Application of an epoxy resin-based adhesive to the carrier section (4) by an inkjet process and / or a dispense process.

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