Display device using a light-emitting semiconductor device and method for manufacturing the same

Abstract

Display device utilizing a light-emitting semiconductor device, the display device comprising: a wiring substrate with a first electrode arranged on it; the light-emitting device which is arranged on the wiring substrate, to form a unit subpixel; a seating layer arranged between the wiring substrate and the light-emitting device, wherein the seating layer comprises a first section in contact with the light-emitting device and a second section located below the first section and having an area larger than the area of ​​the first section; a first connecting electrode that electrically connects the first electrode to a side of the light-emitting device that corresponds to a shape of the seating layer; a planarizing layer covering the light-emitting device and the first connecting electrode; and a second connecting electrode, which is arranged on the planarization layer and is electrically connected to the other side of the light-emitting device, wherein the seating layer further comprises a third section which connects the first section and the second section with a gentle inclination.

Description

Background area

[0001] The present disclosure is applicable to a field of technology related to display devices and relates, for example, to a display device that uses a micro light-emitting diode (LED) and to a method for manufacturing the same. Discussion of the state of the art

[0002] Recently, display devices with excellent properties such as thinness, flexibility, and the like have been developed in the field of display technology. On the other hand, large commercially available displays are currently represented by LCDs (liquid crystal displays) and OLEDs (organic light-emitting diodes). According to US 2017 / 0 170 151 A1, a display device comprises a substrate with a wiring electrode, several semiconductor light-emitting devices electrically connected to the wiring electrode, and an intermediate electrode extending along a certain direction to be electrically connected to the conductive electrodes of adjacent semiconductor light-emitting devices. The intermediate electrode covers the conductive electrodes and faces the wiring electrode for electrical connection.US 2022 / 0 246 583 A1 discloses a method for manufacturing a display device comprising a step for mounting semiconductor light-emitting devices on a substrate; a further step for applying a photosensitive organic insulator to the semiconductor light-emitting devices and the substrate; a step for removing the photosensitive organic insulator from the areas except the space between the substrate and the underside of the semiconductor light-emitting devices; and a further step for curing the photosensitive organic insulator filled into the space. US 2022 / 0 416 127 A1 relates to a display device and a method for manufacturing it, and in particular to a display device that uses a semiconductor light-emitting device ranging in size from a few micrometers to dozens of micrometers.A display device comprises a substrate; a wiring electrode arranged on the substrate; several semiconductor light-emitting devices electrically connected to the wiring electrode; several conductive particles arranged between the wiring electrode and the semiconductor light-emitting devices; and a bonding layer arranged on the semiconductor light-emitting devices to enable the conductive particles to be attached to the semiconductor light-emitting devices, each of the several semiconductor light-emitting devices comprising several conductive electrodes, and the conductive particles being selectively attached only to the surfaces of the conductive electrodes. WO 2023 / 003059 A1 relates to a display device that uses, for example, a micro light-emitting diode (LED), and a manufacturing method for it.Furthermore, the following are included: a substrate; a partition defining a unit pixel area; a first electrode located in the unit pixel area; a semiconductor light-emitting element electrically connecting a first-type electrode to the first electrode and located in the unit pixel area; an inclined coating layer formed on the semiconductor light-emitting element and the partition, exhibiting a strong inclination on the semiconductor light-emitting element; and a second electrode electrically connected on the inclined coating layer to a second-type electrode of the semiconductor light-emitting element.

[0003] On the other hand, an LED (light-emitting diode), a well-known light-emitting semiconductor element that converts electrical current into light, is used as a light source for a display image in electronic devices, including information and communication devices, together with a GaP:N-based green LED, beginning with the commercialization of a red LED using a GaAsP compound semiconductor in 1962. Accordingly, a method for solving the problems described above by implementing a display using the light-emitting semiconductor element has been proposed.

[0004] Recently, such light-emitting diodes (LEDs) have been gradually miniaturized and processed into micro-sized LEDs that are used as a pixel of the display device.

[0005] Compared to other display devices / fields, this micro-LED technology is characterized by low power consumption, high brightness, and high reliability, and can also be applied to flexible devices. Therefore, research institutes and companies have been actively researching micro-LEDs in recent years.

[0006] A current problem related to micro-LEDs is the technology for transferring the LED onto a field. Many LEDs are used to create a display device with micro-LEDs. However, it is very difficult and time-consuming to manufacture the display device by individually attaching the LEDs to the field.

[0007] After the micro-LED has been transferred to a wiring substrate, the micro-LED must be electrically connected to an electrode that is divided on the wiring substrate.

[0008] When transferring the LED to the wiring substrate, the transfer can be achieved by attaching the LED to an adhesive layer located on the wiring substrate. The adhesive layer has the same surface area as the underside of the LED.

[0009] In this case, when forming a connecting electrode that links the LED to the electrode separated on the wiring electrode, an undercut may occur at a section where the adhesive layer is connected to the LED, causing the connecting electrode to separate.

[0010] If the interconnect electrode is designed to be very thick, it becomes difficult to implement an ashing process for structuring the interconnect electrode. In this case, a metal can be etched onto one side of the LED, and the interconnect electrode can then be separated.

[0011] Therefore, a procedure for solving such a problem is needed. Summary

[0012] One embodiment of the present disclosure consists in providing a display device using a light-emitting semiconductor device and a method for manufacturing it, wherein a connecting electrode can be stably connected to and arranged between the light-emitting device and a wiring electrode.

[0013] Furthermore, a display device using a light-emitting semiconductor device and a method for manufacturing the same shall be provided, in which a connecting electrode can be stably arranged by reducing one step of an adhesive layer supporting the light-emitting device.

[0014] Furthermore, a display device using a light-emitting semiconductor device and a method for manufacturing the same shall be provided, which can reduce the thickness of a metal deposited for a connecting electrode and thus reduce the etching time of the metal and the manufacturing time.

[0015] Furthermore, the purpose of one embodiment of the present disclosure is to solve various problems not mentioned here. A person skilled in the art can understand this from the overall purpose of the present disclosure and the drawings.

[0016] A first aspect of the present disclosure provides a display device comprising a wiring substrate with a first electrode arranged thereon, a light-emitting device arranged on the wiring substrate to form a unit subpixel, a seating layer arranged between the wiring substrate and the light-emitting device, the seating layer comprising a first section in contact with the light-emitting device and a second section located below the first section and having an area larger than the area of ​​the first section, a first connecting electrode electrically connecting the first electrode to a side of the light-emitting device corresponding to a shape of the seating layer, and a planarizing layer covering the light-emitting device and the first connecting electrode.and a second connecting electrode, which is arranged on the planarization layer and is electrically connected to the other side of the light-emitting device.

[0017] In one configuration, the first section and the second section can form a staircase shape.

[0018] In one embodiment, the surface area of ​​the first section can be equal to the surface area of ​​a bottom surface of the light-emitting device.

[0019] In one embodiment, the seating layer can further include a third section that connects the first and second sections with a gentle incline.

[0020] In one embodiment, the light-emitting device can be arranged in the middle of the second section.

[0021] In one embodiment, one side of the light-emitting device that is connected to the first connecting electrode can be a side surface of a light-emitting layer of the light-emitting device.

[0022] In one embodiment, the first connecting electrode can connect the first electrode to a lower section of the side surface of the light-emitting layer of the light-emitting device.

[0023] In one embodiment, a passivation layer can be arranged on an outer surface of the light-emitting device, and the first connecting electrode can be arranged under the passivation layer.

[0024] In one embodiment, the first connecting electrode can be connected to the first electrode at one end of the second section of the seating layer.

[0025] In one embodiment, the first connecting electrode can be connected to a lower electrode of the light-emitting device.

[0026] In one embodiment, the second connecting electrode can comprise a transparent electrode.

[0027] In one embodiment, the display device may further comprise a second electrode which is connected to the second connecting electrode.

[0028] In one embodiment, the seating layer can comprise a hardened resin layer.

[0029] A second aspect of the present disclosure provides a display device which uses a light-emitting semiconductor device comprising a wiring substrate with a first electrode arranged thereon, a light-emitting device arranged on the wiring substrate, a seating layer arranged between the wiring substrate and the light-emitting device, supporting a first surface of the light-emitting device and having an area larger than the area of ​​the first surface, a first connecting electrode electrically connecting the first electrode to one side of the light-emitting device, a planarizing layer covering the light-emitting device and the first connecting electrode, and a second connecting electrode, which is arranged on the planarization layer and is electrically connected to the other side of the light-emitting device.

[0030] A third aspect of the present disclosure provides a method for manufacturing a display device using a light-emitting semiconductor device, comprising arranging the light-emitting device on a wiring substrate with an adhesive layer and a first electrode, such that a first surface of the light-emitting device is in contact with the adhesive layer, etching the adhesive layer in a depth direction of the wiring substrate, forming a first connecting electrode that connects one side of the light-emitting device to the first electrode along a top surface of the adhesive layer, forming a planarization layer that covers the light-emitting device and the first connecting electrode, and forming a second connecting electrode that is electrically connected to the other side of the light-emitting device on the planarization layer.

[0031] In one embodiment, the etching of the adhesive layer can include etching the adhesive layer such that the adhesive layer comprises a first section in contact with the light-emitting device and a second section located below the first section and having an area larger than the area of ​​the first section.

[0032] In one embodiment, the formation of the first connecting electrode may include etching a section of the adhesive layer to open a section of the first connecting electrode in order to define an exposed part.

[0033] According to one embodiment of the present disclosure, the connecting electrode can be stably connected to and arranged between the light-emitting device and the wiring electrode, thereby reducing the error rate in the illumination process.

[0034] According to the embodiment of the present disclosure, the level of the adhesive layer supporting the light-emitting device can be reduced step by step so that the connecting electrode can be formed stably.

[0035] According to the embodiment of the present disclosure, the thickness of the metal deposited for the connecting electrode can be reduced. Accordingly, the etching time of the metal can be shortened.

[0036] Furthermore, according to one embodiment of the present disclosure, there are additional technical effects which are not mentioned here. A person skilled in the art can understand this from the overall purpose of the present disclosure and the drawings. Brief description of the drawings Fig. Figure 1 is a conceptual diagram illustrating an embodiment of a display device using a light-emitting semiconductor device according to the present disclosure; Fig. 2 is a partially enlarged diagram showing a Fig. Part A shown in section 1; Fig. 3A and Fig. 3B are cross-sectional diagrams along the intersection lines BB and CC from Fig. 2; Fig. Figure 4 is a conceptual diagram illustrating the flip-chip type light-emitting semiconductor device. Fig. 3 shows; Fig. Figures 5A to 5C are conceptual diagrams illustrating different examples of color implementation in relation to a flip-chip type light-emitting semiconductor device; Fig. Figure 6 shows cross-sectional views of a method for manufacturing a display device using a light-emitting semiconductor device according to the present disclosure; Fig. 7 is a perspective diagram of a display device using a light-emitting semiconductor device according to another embodiment of the present disclosure; Fig. 8 is a cross-sectional diagram along a Fig. 7 shown section line DD; Fig. Figure 9 is a conceptual diagram that represents a Fig. Figure 8 shows a vertical type light-emitting semiconductor device; Fig. Figure 10 is a cross-sectional view showing a display device using a light-emitting semiconductor device according to an embodiment of the present disclosure; Fig. 11A is a cross-sectional view showing a single subpixel of a display device using a light-emitting semiconductor device according to an embodiment of the present disclosure; Fig. 11B is a cross-sectional view showing a single subpixel of a display device using a light-emitting semiconductor device according to another embodiment of the present disclosure; Fig. Figure 12 is a top view showing a single subpixel of a display device using a light-emitting semiconductor device according to an embodiment of the present disclosure; Fig. Figures 13 to 30 are cross-sectional views showing a process for manufacturing a display device using a light-emitting semiconductor device according to an embodiment of the present disclosure; Fig. Figure 31 is a cross-sectional view showing a display device using a light-emitting semiconductor device according to a comparative example; Fig. Figure 32 is a photograph showing part of a display device using a light-emitting semiconductor device according to a comparative example; Fig. 33 is an enlarged photograph of section A from Fig. 32; Fig. Figure 34 is a photograph showing a section of a display device using a light-emitting semiconductor device according to an embodiment of the present disclosure; and Fig. 35 is an enlarged photograph of section C from Fig. 34. Description of the specific embodiments

[0037] Extensive reference will now be made to embodiments of the present disclosure, examples of which are shown in the accompanying drawings. Wherever possible, the same reference numerals are used in the drawings to refer to the same or similar parts, and superfluous descriptions are omitted. The suffixes "module" and "unit" used herein are added or used interchangeably to facilitate the preparation of this specification and are not intended to indicate different meanings or functions. In describing the embodiments disclosed in this specification, relevant known technologies may not be described in detail in order to avoid obscuring the subject matter of the embodiments disclosed in this specification.Furthermore, it should be noted that the accompanying drawings are only intended to facilitate understanding of the embodiments disclosed in this specification and should not be interpreted as limiting the technical concept disclosed in this specification.

[0038] Although the drawings are described separately for the sake of simplicity, embodiments implemented by combining at least two or more drawings are also within the scope of this disclosure.

[0039] Furthermore, if an element such as a layer, area or module is described as being "on" another element, it can be assumed that the element may be located directly on top of the other element or that there may be an intermediate element between them.

[0040] The display device described here is a concept encompassing all display devices that show information using a unit pixel or a set of unit pixels. Therefore, the display device can be applied not only to finished products but also to parts. For example, a display panel that is part of a digital television set also independently corresponds to the display device described here. Finished products include a mobile phone, a smartphone, a laptop, a digital broadcast terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation system, a slate PC, a tablet, an ultrabook, a digital television, a desktop computer, and the like.

[0041] However, it is readily apparent to the person skilled in the art that the configuration according to the embodiments described here is even applicable to a new product that is later developed as a display device.

[0042] Furthermore, the light-emitting semiconductor device mentioned in this description is a concept that includes an LED, a micro-LED and the like, and can be used in mixed ways.

[0043] Fig. Figure 1 is a conceptual view illustrating an embodiment of a display device using a light-emitting semiconductor device according to the present disclosure.

[0044] As in Fig. As shown in Figure 1, information processed by a controller (not shown) of a display device 100 can be displayed using a flexible display.

[0045] The flexible display can, for example, include a display that can be distorted, bent, twisted, folded, or rolled by an external force.

[0046] Furthermore, a flexible display could, for example, be a display manufactured on a thin and flexible substrate that can be warped, bent, folded or rolled like paper, while retaining the display characteristics of a conventional flat screen.

[0047] If the flexible display remains in an undistorted state (e.g., a state with an infinite radius of curvature) (hereinafter referred to as a first state), the display area of ​​the flexible display forms a flat surface. If the display in the first state is changed by an external force to a bent state (e.g., a state with a finite radius of curvature) (hereinafter referred to as a second state), the display area can be a curved surface. As in Fig. As shown in Figure 1, the information displayed in the second state can be visual information projected onto a curved surface. Such visual information can be implemented by independently controlling the light emission of subpixels arranged in a matrix. The unit pixel, for example, can represent a minimum unit for representing a color.

[0048] The unit pixel of the flexible display can be implemented by a light-emitting semiconductor device. In the present disclosure, a light-emitting diode (LED) is illustrated as a type of light-emitting semiconductor device configured to convert electrical current into light. The LED can be small and thus also serve as a unit pixel in the second state.

[0049] The following section describes in more detail, with reference to the drawings, a flexible display implemented using LEDs.

[0050] Fig. 2 is a partially enlarged view showing part A from Fig. 1 shows.

[0051] Fig. 3A and Fig. 3B are cross-sectional views along lines BB and CC from Fig. 2.

[0052] As in the Fig. 2, Fig. 3A and Fig. Figure 3B shows the display device 100, which uses a passive matrix (PM) type light-emitting semiconductor device. The examples described below are also applicable to an active matrix (AM) type light-emitting semiconductor device.

[0053] The in Fig. The display device 100 shown in Figure 1 can comprise a substrate 110, a first electrode 120, a conductive adhesive layer 130, a second electrode 140 and at least one light-emitting semiconductor device 150, as shown in Figure 1. Fig. 2 shown.

[0054] Substrate 110 can be a flexible substrate. For example, to implement a flexible display device, substrate 110 can comprise glass or polyimide (PI). Any insulating and flexible material such as polyethylene naphthalate (PEN) or polyethylene terephthalate (PET) can be used. Furthermore, substrate 110 can be either transparent or opaque.

[0055] The substrate 110 can be a wiring substrate on which the first electrode 120 is arranged. Thus, the first electrode 120 can be positioned on the substrate 110.

[0056] As in Fig. Figure 3A shows that an insulating layer 160 can be arranged on the substrate 110, on which the first electrode 120 is positioned, and an auxiliary electrode 170 can be positioned on the insulating layer 160. In this case, a stack in which the insulating layer 160 is laminated onto the substrate 110 can form a single wiring substrate. More precisely, the insulating layer 160 can be made of an insulating and flexible material such as PI, PET, or PEN and can be integrated with the substrate 110 to form a single substrate.

[0057] The auxiliary electrode 170, which electrically connects the first electrode 120 and the light-emitting semiconductor device 150, is positioned on the insulating layer 160 and is arranged to correspond to the position of the first electrode 120. The auxiliary electrode 170 can, for example, be dot-shaped and can be electrically connected to the first electrode 120 by means of an electrode hole 171 formed through the insulating layer 160. The electrode hole 171 can be formed by filling a through-hole with a conductive material.

[0058] As in the Fig. 2 or Fig. Figure 3A shows that a conductive adhesive layer 130 can be formed on a surface of the insulating layer 160; however, embodiments of the present disclosure are not limited to this. For example, a layer fulfilling a specific function can be formed between the insulating layer 160 and the conductive adhesive layer 130, or the conductive adhesive layer 130 can be arranged on the substrate 110 without the insulating layer 160. In a structure in which the conductive adhesive layer 130 is arranged on the substrate 110, the conductive adhesive layer 130 can serve as an insulating layer.

[0059] The conductive adhesive layer 130 can be a layer with both adhesive and conductive properties. For this purpose, a conductive material and an adhesive material can be mixed within the conductive adhesive layer 130. Furthermore, the conductive adhesive layer 130 can exhibit ductility, thereby making the display device flexible.

[0060] For example, the conductive adhesive layer 130 can be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. The conductive adhesive layer 130 can be configured as a layer that allows an electrical connection in the Z-axis direction, extending through its thickness, but is electrically insulating in the horizontal XY direction. Accordingly, the conductive adhesive layer 130 can be referred to as a Z-axis conductive layer (hereafter simply as a "conductive adhesive layer").

[0061] An ACF is a film in which an anisotropic conductive medium is mixed with an insulating base element. When the ACF is subjected to heat and pressure, only a specific portion of it becomes conductive due to the anisotropic conductive medium. The following describes how heat and pressure are applied to the ACF. However, another method can be used to make the ACF partially conductive. This alternative method could, for example, involve applying only one of the heat and pressure or UV curing.

[0062] Furthermore, the anisotropic conductive medium can consist of conductive spheres or conductive particles. For example, the ACF can be a film in which conductive spheres are mixed with an insulating base element. Therefore, when heat and pressure are applied to the ACF, only a specific section of the ACF can be conductive due to the conductive spheres. Alternatively, the ACF can contain multiple particles formed by coating a core of conductive material with an insulating film of a polymer material. In this case, since the insulating film is disrupted in a section subjected to heat and pressure, this section becomes conductive due to the core. At this point, the cores can be deformed to form layers that touch each other in the thickness direction of the film.As a more concrete example, heat and pressure are applied to the entire ACF, and an electrical connection in the direction of the Z-axis is partially formed by the height difference of a counterpart attached to the ACF.

[0063] As another example, the ACF can contain a plurality of particles formed by coating an insulating core with a conductive material. In this case, if the conductive material is deformed (pressed) in a section subjected to heat and pressure, this section becomes conductive in the thickness direction of the film. Alternatively, the conductive material can be arranged through the insulating base element in the direction of the Z-axis to provide conductivity in the thickness direction of the film. In this case, the conductive material can have a pointed end.

[0064] The ACF can be a fixed-arrangement ACF in which conductive spheres are embedded in the surface of the insulating base element. More specifically, the insulating base element can be made of an adhesive material, and the conductive spheres can be densely packed on the bottom section of the insulating base element. When the base element is subjected to heat and pressure, it can deform along with the conductive spheres, exhibiting conductivity in the vertical direction.

[0065] However, the present disclosure is not necessarily limited thereto, and the ACF can be formed by random mixing of conductive spheres in the insulating base element or can consist of a plurality of layers, with conductive spheres arranged on one of the layers (as a double ACF).

[0066] The anisotropic conductive paste can be a combination of a paste and conductive spheres, or it can be a paste in which conductive spheres are mixed with an insulating and adhesive base material. Furthermore, the solution containing conductive particles can be a solution containing any conductive particles or nanoparticles.

[0067] Referring again to Fig. In 3A, the second electrode 140 is positioned on the insulating layer 160 and spaced apart from the auxiliary electrode 170. That is, the conductive adhesive layer 130 is arranged on the insulating layer 160, on which the auxiliary electrode 170 and the second electrode 140 are positioned.

[0068] After the conductive adhesive layer 130 has been formed with the auxiliary electrode 170 and the second electrode 140 positioned on the insulating layer 160, the light-emitting semiconductor device 150 is connected to it in a flip-chip form by applying heat and pressure. This electrically connects the light-emitting semiconductor device 150 to the first electrode 120 and the second electrode 140.

[0069] Fig. Figure 4 is a conceptual view that depicts the flip-chip type light-emitting semiconductor device. Fig. 3 represents.

[0070] With reference to Fig. 4. The light-emitting semiconductor device can be a flip-chip type light-emitting device.

[0071] For example, the light-emitting semiconductor device can comprise a p-type electrode 156, a p-type semiconductor layer 155 on which the p-type electrode 156 is formed, an active layer 154 formed on the p-type semiconductor layer 155, an n-type semiconductor layer 153 formed on the active layer 154, and an n-type electrode 152 arranged on the n-type semiconductor layer 153 and horizontally spaced from the p-type electrode 156. In this case, the p-type electrode 156 can be electrically connected to the auxiliary electrode 170 by the conductive adhesive layer 130, as shown in Fig. 3 shown, connected and the n-type electrode 152 can be electrically connected to the second electrode 140.

[0072] With renewed reference to the Fig. 2, Fig. 3A and Fig. 3B The auxiliary electrode 170 can be extended in one direction. Thus, an auxiliary electrode can be electrically connected to the majority of light-emitting semiconductor devices 150. For example, p-type electrodes of light-emitting semiconductor devices on the left and right sides of an auxiliary electrode can be electrically connected to an auxiliary electrode.

[0073] More precisely, the light-emitting semiconductor device 150 can be pressed into the conductive adhesive layer 130 by heat and pressure. As a result, only the sections of the light-emitting semiconductor device 150 between the p-type electrode 156 and the auxiliary electrode 170, and between the n-type electrode 152 and the second electrode 140, can be conductive, while the other sections of the light-emitting semiconductor device 150 are non-conductive because they are not pressed in. In this way, the conductive adhesive layer 130 electrically links and connects the light-emitting semiconductor device 150 and the auxiliary electrode 170, and also electrically connects the light-emitting semiconductor device 150 and the second electrode 140.

[0074] The majority of light-emitting semiconductor devices 150 can form a light-emitting device arrangement, and a phosphor conversion layer 180 can be formed on the light-emitting device arrangement.

[0075] The light-emitting device arrangement can comprise a plurality of light-emitting semiconductor devices with different luminance values. Each light-emitting semiconductor device 150 can form a unit pixel and be electrically connected to the first electrode 120. For example, a plurality of first electrodes 120 can be provided, and the light-emitting semiconductor devices can be arranged, for example, in several columns. The light-emitting semiconductor devices in each column can be electrically connected to one of the plurality of first electrodes.

[0076] Since the light-emitting semiconductor devices are also connected in a flip-chip form, light-emitting semiconductor devices grown on a transparent dielectric substrate can be used. These light-emitting semiconductor devices can, for example, be light-emitting nitride semiconductor devices. Because the light-emitting semiconductor device 150 has excellent luminance, it can represent a single unit pixel even at a small size.

[0077] As in the Fig. 3a and Fig. As shown in Figure 3b, a partition 190 can be formed between the light-emitting semiconductor devices 150. In this case, the partition 190 can serve to separate individual unit pixels from one another and can be integrated into the conductive adhesive layer 130. For example, the base element of the ACF can form the partition by inserting the light-emitting semiconductor device 150 into the ACF.

[0078] Furthermore, if the base element of the ACF is black, the partition 190 can also exhibit reflectivity and increase contrast without a separate black insulator.

[0079] As another example, a reflective partition can be provided separately as partition 190. In this case, partition 190 can include a black or white insulator, depending on the purpose of the display device. Using a partition with a white insulator can increase reflectivity. Using a partition with a black insulator can increase reflectivity and enhance contrast.

[0080] The phosphor conversion layer 180 can be positioned on the outer surface of the light-emitting semiconductor device 150. For example, the light-emitting semiconductor device 150 can be a blue light-emitting semiconductor device that emits blue (B) light, and the phosphor conversion layer 180 can serve to convert the blue (B) light into the color of a unit pixel. The phosphor conversion layer 180 can be a red phosphor 181 or a green phosphor 182, forming a single pixel.

[0081] This means that the red phosphor 181, which can convert blue light into red (R) light, can be laminated onto a blue light-emitting semiconductor device at a unit pixel of red, and the green phosphor 182, which can convert blue light into green (G) light, can be laminated onto the blue light-emitting semiconductor device at a unit pixel of green. Only the blue light-emitting semiconductor device can be used in the section that forms the unit pixel of blue. In this case, unit pixels of red (R), green (G), and blue (B) can form a single pixel. More precisely, a phosphor of one color can be laminated along each line of the first electrode 120. Accordingly, each line on the first electrode 120 can be an electrode for controlling one color.This means that red (R), green (G) and blue (B) can be arranged sequentially along the second electrode 140, thus implementing a unit pixel.

[0082] However, embodiments of the present disclosure are not limited thereto. Unit pixels of red (R), green (G), and blue (B) can be implemented by a combination of the light-emitting semiconductor device 150 and the quantum dot (QD) instead of using the phosphor.

[0083] Furthermore, a black matrix 191 can be arranged between the phosphor conversion layers to improve contrast. That is, the black matrix 191 can enhance the contrast between light and dark.

[0084] However, embodiments of the present disclosure are not limited thereto and another structure can be used to implement the colors blue, red and green.

[0085] Fig. 5A to 5C are conceptual views that illustrate different examples of an implementation of colors in relation to a flip-chip type light-emitting semiconductor device.

[0086] With reference to Fig. 5A Any light-emitting semiconductor device can be implemented as a high-power light-emitting device that emits light in various colors including blue by using gallium nitride (GaN) as a main material and adding indium (In) and / or aluminum (Al).

[0087] In this case, each light-emitting semiconductor device can be a red, green, or blue light-emitting semiconductor device to form a unit pixel (subpixel). For example, red, green, and blue light-emitting semiconductor devices R, G, and B can be arranged alternately, and unit pixels made up of red, green, and blue can form a pixel through the red, green, and blue light-emitting semiconductor devices. This allows a full-color display to be implemented.

[0088] With reference to Fig. 5B The light-emitting semiconductor device 150a can comprise a white light-emitting device W with a yellow phosphor conversion layer provided for each device. In this case, to form a unit pixel, a red phosphor conversion layer 181, a green phosphor conversion layer 182, and a blue phosphor conversion layer 183 can be arranged on the white light-emitting device W. Furthermore, a unit pixel can be formed using a color filter that repeats red, green, and blue on the white light-emitting device W.

[0089] With reference to Fig. In 5C, a conversion layer 181 made of red phosphor, a conversion layer 185 made of green phosphor, and a conversion layer 183 made of blue phosphor can be provided on a device for emitting ultraviolet light. Not only visible light but also ultraviolet (UV) light can be used throughout the entire area of ​​the light-emitting semiconductor device. In one embodiment, UV can be used as an excitation source for the upper phosphor in the light-emitting semiconductor device.

[0090] Referring again to this example, the light-emitting semiconductor device is positioned on the conductive adhesive layer to form a unit pixel in the display device. Because the light-emitting semiconductor device has excellent luminance, individual unit pixels can be configured even if the light-emitting semiconductor device is small.

[0091] Regarding the size of such a single light-emitting semiconductor device, the length of each side of the device can be, for example, 80 µm or less, and the device can have a rectangular or square shape. If the light-emitting semiconductor device has a rectangular shape, its size can be less than or equal to 20 µm × 80 µm.

[0092] Furthermore, even when a square light-emitting semiconductor device with a side length of 10 µm is used as a unit pixel, sufficient brightness can be obtained to form a display device.

[0093] Therefore, for example, in the case of a rectangular pixel with a unit pixel size of 600 µm × 300 µm (i.e., one side to the other), the distance of a light-emitting semiconductor device will be relatively long enough.

[0094] Therefore, in this case it is possible to implement a flexible display device with high image quality compared to HD image quality.

[0095] The display device described above, which uses the light-emitting semiconductor device, can be manufactured by a new manufacturing process. Such a manufacturing process is described with reference to Fig. 6 as described below.

[0096] Fig. Figure 6 shows cross-sectional views of a method for manufacturing a display device using a light-emitting semiconductor device according to the present disclosure.

[0097] With reference to Fig. 6. First, a conductive adhesive layer 130 is formed on an insulating layer 160, which is positioned between an auxiliary electrode 170 and a second electrode 140. The insulating layer 160 is then tacked onto a wiring substrate 110. A first electrode 120, the auxiliary electrode 170, and the second electrode 140 are arranged on the wiring substrate 110. In this case, the first electrode 120 and the second electrode 140 can be arranged orthogonally to each other. To implement a flexible display device, the wiring substrate 110 and the insulating layer 160 can each comprise glass or polyimide (PI).

[0098] For example, the conductive adhesive layer 130 can be implemented by an anisotropic conductive film. For this purpose, an anisotropic conductive film can be applied to the substrate on which the insulating layer 160 is arranged.

[0099] Subsequently, a temporary substrate 112, on which a plurality of light-emitting semiconductor devices 150, which configure individual pixels, are arranged such that they correspond to positions of the auxiliary electrode 170 and the second electrodes 140, is arranged in such a way that the light-emitting semiconductor device 150 is located opposite the auxiliary electrode 170 and the second electrode 140.

[0100] In this respect, the temporary substrate 112 is a growth substrate for growing the light-emitting semiconductor device 150 and may comprise a sapphire or silicon substrate.

[0101] The light-emitting semiconductor device is designed to have space and size for setting up a display device when configured as a wafer unit, thus making it effective for the display device.

[0102] The wiring substrate 110 and the temporary substrate 112 are then thermally compressed. This thermal compression bonds the wiring substrate 110 and the temporary substrate 112 together. Due to the conductivity of the anisotropic conductive film after thermal compression, only a portion of the light-emitting semiconductor device 150, the auxiliary electrode 170, and the second electrode 140 exhibits conductivity, allowing for electrical connection between the electrodes and the light-emitting semiconductor device 150. In this case, the light-emitting semiconductor device 150 is embedded in the anisotropic conductive film, thus forming a partition between the light-emitting semiconductor devices 150.

[0103] Then the temporary substrate 112 is removed. For example, the temporary substrate 112 can be removed using laser lift-off (LLO) or chemical lift-off (CLO).

[0104] Finally, by removing the temporary substrate 112, the light-emitting semiconductor devices 150 are exposed. If required, the wiring substrate 110, to which the light-emitting semiconductor devices 150 are coupled, can be coated with silicon dioxide (SiOx) or the like to form a transparent insulating layer (not shown).

[0105] Furthermore, a step to form a phosphor layer on one side of the light-emitting semiconductor device 150 may be included. For example, the light-emitting semiconductor device 150 may comprise a blue light-emitting semiconductor device that emits blue (B) light, and a red or green phosphor for converting the blue (B) light into a unit pixel color may form a layer on one side of the blue light-emitting semiconductor device.

[0106] The manufacturing process or structure of the display device described above, which uses the light-emitting semiconductor device, can be modified in various ways. For example, the display device described above can use a vertical light-emitting semiconductor device.

[0107] Furthermore, a modification or embodiment described below may use the same or similar reference numerals for the same or similar configurations as the previous example, and the earlier description may apply to it.

[0108] Fig. Figure 7 is a perspective diagram of a display device that uses a light-emitting semiconductor device according to another embodiment of the present disclosure, Fig. 8 is a cross-sectional diagram along a Fig. 8 shown section line DD and Fig. Figure 9 is a conceptual diagram that represents a Fig. Figure 8 shows a vertical type light-emitting semiconductor device.

[0109] With reference to the present drawings, a display device can use a vertical light-emitting semiconductor device of the passive matrix (PM) type.

[0110] The display device comprises a substrate 210, a first electrode 220, a conductive adhesive layer 230, a second electrode 240 and at least one light-emitting semiconductor device 250.

[0111] Substrate 210 is a wiring substrate on which the first electrode 220 is arranged and may contain polyimide (PI) to implement a flexible display device. Furthermore, substrate 210 can consist of any insulating and flexible substance.

[0112] The first electrode 210 is located on the substrate 210 and can be configured as a rod electrode that is long in one direction. The first electrode 220 can be configured to function as a data electrode.

[0113] The conductive adhesive layer 230 is formed on the substrate 210 where the first electrode 220 is located. As in a display device to which a flip-chip type light-emitting device is applied, the conductive adhesive layer 230 can comprise an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, and the like. However, in the present embodiment, one implementation of the conductive adhesive layer 230 with the anisotropic conductive film is shown by way of example.

[0114] After the conductive adhesive layer has been positioned in the state in which the first electrode 220 is arranged on the substrate 210, the light-emitting semiconductor device 250 is electrically connected to the first electrode 220 by applying heat and pressure. The light-emitting semiconductor device 250 is preferably arranged such that it is positioned on the first electrode 220.

[0115] When heat and pressure are applied to an anisotropic conductive film, as described above, an electrical connection is established because the anisotropic conductive film exhibits conductivity in part along its thickness. Therefore, the anisotropic conductive film is divided into a conductive section and a non-conductive section.

[0116] Since the anisotropic conductive film further contains an adhesive component, the conductive adhesive layer 230 implements a mechanical coupling between the light-emitting semiconductor device 250 and the first electrode 220 as well as a mechanical connection.

[0117] Thus, the light-emitting semiconductor device 250 is arranged on the conductive adhesive layer 230, across which a single pixel is established in the display device. Since the light-emitting semiconductor device 250 has excellent luminance, a single unit pixel can also be established in a small size. Regarding the size of the individual light-emitting semiconductor device 250, the length of one side can be, for example, equal to or less than 80 µm, and the individual light-emitting semiconductor device 250 can comprise a rectangular or square element. For example, the rectangular element can have a size of 20 µm × 80 µm or less.

[0118] The light-emitting semiconductor device 250 can have a vertical structure.

[0119] Among the vertical-type light-emitting semiconductor devices, a plurality of second electrodes 240, each electrically connected to the vertical-type light-emitting semiconductor devices 250, are arranged in a direction that intersects a longitudinal direction of the first electrode 220.

[0120] With reference to Fig. Figure 9 comprises the vertical-type light-emitting semiconductor device 250, a p-type electrode 256, a p-type semiconductor layer 255 formed on the p-type electrode 256, an active layer 254 formed on the p-type semiconductor layer 255, an n-type semiconductor layer 253 formed on the active layer 254, and an n-type electrode 252 formed on the n-type semiconductor layer 253. In this case, the p-type electrode 256, which is arranged on a bottom surface, can be electrically connected to the first electrode 220 via the conductive adhesive layer 230, and the n-type electrode 252, which is arranged on a top surface, can be electrically connected to a second electrode 240, which will be described later. Since such a vertical type light-emitting semiconductor device 250 can arrange the electrodes at the top and bottom, this is very advantageous with regard to reducing chip size.

[0121] With renewed reference to Fig. 8. A phosphor layer 280 can be formed on one side of the light-emitting semiconductor device 250. For example, the light-emitting semiconductor device 250 can be a blue light-emitting semiconductor device 251 that emits blue (B) light, and a phosphor layer 280 can be provided for converting the blue (B) light into a unit pixel color. In this respect, the phosphor layer 280 can comprise a red phosphor 281 and a green phosphor 282, which together form a single pixel.

[0122] At a location where a red unit pixel is set up, the red phosphor 281, which can convert blue light into red (R) light, can be stacked on a blue light-emitting semiconductor device. At a location where a green unit pixel is set up, the green phosphor 282, which can convert blue light into green (G) light, can be stacked on the blue light-emitting semiconductor device. Furthermore, the blue light-emitting semiconductor device can be used individually for a section that sets up a blue unit pixel. In this case, the unit pixels red (R), green (G), and blue (B) can set up a single pixel.

[0123] However, the present disclosure is not limited by the above description. In a display device in which a flip-chip type light-emitting device, as described above, is used, a different structure for implementing blue, red, and green may be applicable.

[0124] Referring again to the present embodiment, the second electrode 240 is arranged between the light-emitting semiconductor devices 250 and electrically connected to them. For example, the light-emitting semiconductor devices 250 are arranged in a plurality of columns, and the second electrode 240 can be arranged between the columns of the light-emitting semiconductor devices 250.

[0125] Since the distance between the light-emitting semiconductor devices 250 that form the individual pixel is sufficiently large, the second electrode 240 can be arranged between the light-emitting semiconductor devices 250.

[0126] The second electrode 240 can be designed as a rod electrode that is long in one direction and is arranged perpendicular to the first electrode in one direction.

[0127] Furthermore, the second electrode 240 and the light-emitting semiconductor device 250 can be electrically connected to each other by a connecting electrode projecting from the second electrode 240. In particular, the connecting electrode can comprise an n-type electrode of the light-emitting semiconductor device 250. For example, the n-type electrode is configured as an ohmic electrode for ohmic contact, and the second electrode covers at least a portion of the ohmic electrode by printing or deposition. Thus, the second electrode 240 and the n-type electrode of the light-emitting semiconductor device 250 can be electrically connected to each other.

[0128] With renewed reference to Fig. 8. The second electrode 240 can be arranged on the conductive adhesive layer 230. In some cases, a transparent insulating layer (not shown), containing silicon dioxide (SiOx) and the like, can be formed on the substrate 210 on which the light-emitting semiconductor device 250 is formed. If the second electrode 240 is placed after the transparent insulating layer has been formed, the second electrode 240 is arranged on the transparent insulating layer. Alternatively, the second electrode 240 can be configured to be spaced apart from the conductive adhesive layer 230 or the transparent insulating layer.

[0129] If a transparent electrode made of indium tin oxide (ITO) or the like is used to place the second electrode 240 on the light-emitting semiconductor device 250, the problem arises that the ITO substance exhibits poor adhesion to an n-type semiconductor layer. Therefore, according to the present disclosure, since the second electrode 240 is placed between the light-emitting semiconductor devices 250, it is advantageous not to use a transparent ITO electrode. Thus, the efficiency of light extraction can be improved by using a conductive substance with good adhesion to an n-type semiconductor layer as a horizontal electrode, without any restrictions on the choice of the transparent substance.

[0130] With renewed reference to Fig. 8. A partition 290 can be arranged between the light-emitting semiconductor devices 250. Specifically, to isolate the light-emitting semiconductor devices 250 that form the individual pixels, the partition 290 can be arranged vertically between the light-emitting semiconductor devices 250. In this case, the partition 290 can play a role in separating the individual unit pixels from one another and can be formed as an integral component with the conductive adhesive layer 230. For example, by embedding the light-emitting semiconductor device 250 in an anisotropic conductive film, a base element of the anisotropic conductive film can form the partition.

[0131] Furthermore, if the base element of the anisotropic conductive film is black, the partition can exhibit 290 reflective properties and a contrast ratio can be increased without the need for a separate block insulator.

[0132] As another example, a reflective partition can be provided separately as partition 190. Partition 290 can include a black or white insulator, depending on the purpose of the display device.

[0133] In the case that the second electrode 240 is arranged directly on the conductive adhesive layer 230 between the light-emitting semiconductor devices 250, the partition 290 can be positioned between the vertical light-emitting semiconductor device 250 and the second electrode 240. Therefore, a single unit pixel can be established using the light-emitting semiconductor device 250. Since the distance between the light-emitting semiconductor devices 250 is sufficiently large, the second electrode 240 can be placed between them. This can achieve the effect of implementing a flexible display device with HD image quality.

[0134] Furthermore, as in Fig. Figure 8 shows that a black matrix 291 can be arranged between the respective phosphors to improve the contrast ratio. The black matrix 291 can improve the contrast between light and shadow.

[0135] In the display device described above, which uses the light-emitting semiconductor device according to the present disclosure, the light-emitting semiconductor device is arranged on the wiring substrate in flip-chip type and is used as a single pixel.

[0136] Fig. Figure 10 is a cross-sectional view showing a display device using a light-emitting semiconductor device according to an embodiment of the present disclosure. Fig. Figure 11A is a cross-sectional view showing a single subpixel of a display device using a light-emitting semiconductor device according to an embodiment of the present disclosure.

[0137] With reference to Fig. 10 and Fig. 11A A display device 300 according to an embodiment of the present disclosure can be constructed as a light-emitting device 330 which forms a subunit pixel and is arranged on a wiring substrate 310 on which a first electrode 312 is arranged.

[0138] The wiring substrate 310 can include the first electrode 312, which is arranged on the substrate 311.

[0139] In the wiring substrate 310, several first electrodes 312 can be arranged on the substrate 311. Such a first electrode 312 can be used as a wiring electrode. The first electrode 312 can be positioned separately on the substrate 311. In this respect, the wiring electrode can be used as a data electrode (a pixel electrode) or as a scanning electrode (a common electrode).

[0140] The light-emitting devices 330, which form the three unit subpixels, can form a unit pixel. In this respect, the light-emitting device 330 can comprise a red light-emitting device that emits red light, a green light-emitting device that emits green light, and a blue light-emitting device that emits blue light. Such unit pixels can be arranged repeatedly on the wiring substrate 310.

[0141] Although not shown, the first electrode 312, located on the wiring substrate 310, can be connected to a TFT layer equipped with a thin-film transistor (TFT). The data electrode (the pixel electrode) can also be connected to such a TFT layer. A detailed description of this is omitted.

[0142] A seating layer 320 can be positioned between the wiring substrate 310 and the light-emitting device 330. Such a seating layer 320 can form a support structure that carries the light-emitting device 330.

[0143] The seating layer 320 can support a first surface (e.g., a bottom surface) of the light-emitting device 330. The seating layer 320 can comprise a section with a larger surface area than the first surface.

[0144] With reference to Fig. 11A Such a seating layer 320 can comprise a first section 321 in contact with the light-emitting device 330 and a second section 322, which is arranged below the first section 321 and has a larger surface area than the first section 321. In some cases, an additional section with a larger surface area can be formed below the second section 322. Therefore, the seating layer 320 can have a stepped shape with two or more steps.

[0145] In one example, the first section 321 and the second section 322 can be shaped to have a gentle incline.

[0146] As an exemplary embodiment, the first section 321 and the second section 322 can have the shape of a staircase. For example, the surface area of ​​the first section 321 can be equal to the surface area of ​​the underside of the light-emitting device 330. Furthermore, the surface area of ​​the second section 322 can be larger than the surface area of ​​the underside of the light-emitting device 330.

[0147] For example, the first section 321 of the seating layer 320 can support the light-emitting device 330 by being in contact with an underside of the light-emitting device 330, and the second section 322 can be connected to the first section 321 and directed downwards from the first section 321. For example, the second section 322 can be arranged on the wiring substrate 310. For example, the second section 322 can be positioned in contact with the wiring substrate 310.

[0148] The seating layer 320 can comprise a cured resin layer. For example, the seating layer 320 can be made from a resin material such as photoresist and then cured. For example, such a seating layer 320 can have an adhesive strength to fix the light-emitting device 330 during an assembly process of the light-emitting device 330 and can then be cured to support the light-emitting device 330.

[0149] As an exemplary embodiment, at least one of the top and bottom surfaces of the light-emitting device 330 can be circular. For example, the light-emitting device 330 can have a cylindrical shape or a truncated conical shape.

[0150] With reference to Fig. 11A The light-emitting device 330 can comprise a first conductive semiconductor layer 331, a second conductive semiconductor layer 332 and a light-emitting layer (an active layer) 333 arranged between the first conductive semiconductor layer 331 and the second conductive semiconductor layer 332.

[0151] For example, the first conductive semiconductor layer 331 can be an n-type semiconductor layer. In this respect, the second conductive semiconductor layer 332 can be a p-type semiconductor layer. Such a light-emitting device 330 can be a nitride-based light-emitting semiconductor device. For example, the light-emitting device 330 can be a gallium nitride (GaN)-based light-emitting semiconductor device.

[0152] The light-emitting device 330 can be arranged in the center of the second section 322 of the seating layer 320.

[0153] To provide vertical selectivity during the assembly of the light-emitting device 330, a lower surface area of ​​the light-emitting device 330 can be larger than an upper surface area. For example, the surface area of ​​a side of the light-emitting device 330 that is close to the seating layer 320 can be larger than the surface area of ​​a side of it that is far from the seating layer 320.

[0154] Furthermore, the display device 300 can include a first connecting electrode 340 that electrically connects the first electrode 312 to one side of the light-emitting device 330. Such a first connecting electrode 340 can be made of a metal with high electrical conductivity, such as Al, Mo, Cu, Ag, or Pt.

[0155] As an exemplary embodiment, one side of the light-emitting device 330 to which the first connecting electrode 340 is connected can be a side surface of the light-emitting layer 333 of the light-emitting device 330. For example, the first connecting electrode 340 can be laterally connected to the surface formed by the light-emitting layer 333 of the light-emitting device 330. Such a first connecting electrode 340 can be electrically connected to a side surface of the first conductive semiconductor layer 331 of the light-emitting device 330.

[0156] Such a first connecting electrode 340 can be formed along the side surface of the light-emitting device 330 and a top surface of the seating layer 320. In this respect, the first connecting electrode 340 can comprise a side surface 342 arranged on the side surface of the light-emitting device 330 and a bottom surface 343 arranged on a top surface of the seating layer 320.

[0157] Since the seating layer 320 has the first section 321 and the second section 322, the side surface 342 and the underside 343 of the first connecting electrode 340 can be connected to each other with a gentle inclination. Therefore, the first connecting electrode 340 can be designed to be stably and continuously connected across the entire display.

[0158] With reference to Fig. 11A The first connecting electrode 340 can be arranged on both sides of the light-emitting device 330. In some cases, the first connecting electrode 340 can be arranged so that it covers the side surface of the light-emitting device 330.

[0159] Furthermore, such a first connecting electrode 340 can be electrically connected to a lower electrode 337 (see Fig. 18) of the light-emitting device 330. That is, such a first connecting electrode 340 can be connected to a side section of the lower electrode 337, which is located on the underside of the light-emitting device 330. Such a lower electrode 337 can function as a magnetic layer during the assembly of the light-emitting device 330. To increase the adhesion between at least one such magnetic layer 337 and the first connecting electrode 340, a metal such as Cr and / or Ti can be added.

[0160] The first connecting electrode 340 can be arranged in contact with the seating layer 320. For example, the first connecting electrode 340 can extend along the top surface of the seating layer 320 and be connected to the first electrode 312 of the wiring substrate 310.

[0161] For example, the first connecting electrode 340 can be continuously connected along the first section 321 and the second section 322, which form the stepped shape. Therefore, the first connecting electrode 340 can be connected to the first electrode 312 at one end of the second section 322 of the seating layer 320.

[0162] In the Fig. 10 and Fig. 11A is the shape of a section where the first connecting electrode 340 is in contact with the first electrode 312, expressed differently. Such a difference can occur depending on the process for forming the first connecting electrode 340.

[0163] For example, where the first connecting electrode 340 is connected to the first electrode 312, a vertical height difference 341 may exist. This can occur depending on the thickness of the seating layer 320. For example, the vertical height difference 341 of the first connecting electrode 340 may be due to a vertical dimensional difference of the second section 322 of the seating layer 320.

[0164] A passivation layer 334 can be arranged on the side surface of the light-emitting device 330 outside the section to which the first connecting electrode 340 is connected. Thus, the passivation layer 334 can be arranged on an outer surface of the light-emitting device 330, and the first connecting electrode 340 can be arranged beneath the passivation layer 334. Such a passivation layer 334 can protect an outer surface of the light-emitting device 330.

[0165] A planarization layer 350 can be arranged on one side of the first connecting electrode 340 and the light-emitting device 330. The planarization layer 350 can cover the first connecting electrode 340 and the light-emitting device 330. The planarization layer 350 can have a vertical dimension equal to or greater than the top surface of the light-emitting device 330.

[0166] In this context, the second conductive semiconductor layer 332 on the top side of the light-emitting device 330 may be exposed. Even if, for example, the planarization layer 350 has a vertical dimension extending beyond the top side of the light-emitting device 330, the second conductive semiconductor layer 332 of the light-emitting device 330 may still be exposed.

[0167] Additionally, a second connecting electrode 361 can be arranged on the planarization layer 350 and electrically connected to the other side of the light-emitting device 330. For example, such a second connecting electrode 361 can comprise a transparent electrode such as an ITO. Accordingly, light emitted by the light-emitting device 330 can pass through the second connecting electrode 361 and be emitted to the outside.

[0168] One form of the planarization layer 350 is used in the Fig. 10 and Fig. 11A is expressed differently. Therefore, the shape of the planarization layer 350 can change depending on the case.

[0169] With reference to Fig. 10 a second electrode 360 ​​can be arranged, which is connected to the second connecting electrode 361.

[0170] As mentioned above, the first electrode 312 and the second electrode 360 ​​can be used as the wiring electrodes. For example, the first electrode 312 can function as the data electrode (the pixel electrode) and the second electrode 360 ​​can function as the scanning electrode (the common electrode).

[0171] With reference to Fig. 10. The second connecting electrode 361 can be partially arranged on the light-emitting device 330. In some cases, such second connecting electrodes 361 can be connected to each other by the second electrode 360.

[0172] Fig. Figure 11B is a cross-sectional view showing a single subpixel of a display device that uses a light-emitting semiconductor device according to another embodiment of the present disclosure.

[0173] The present embodiment is described below, with a focus on the differences to Fig. 11A is located there.

[0174] With reference to Fig. 11B The seating layer 320 can support the first surface (e.g., the underside) of the light-emitting device 330. The seating layer 320 can comprise the section with a larger surface area than the first surface.

[0175] With reference to Fig. 11B The seating layer 320 can comprise the first section 321 in contact with the light-emitting device 330, the second section 322, which is arranged below the first section 321 and has a larger surface area than the first section 321, and a third section 323, which connects the first section 321 and the second section 322 with a gentle incline towards each other. In some cases, an additional fourth section with a larger surface area can be formed below the second section 322 (not shown). Therefore, the seating layer 320 can have the shape of two or more steps.

[0176] Thus, the first section 321 and the second section 322 can be connected to each other via the third section 323 and shaped in such a way that they have a gentle inclination.

[0177] For example, the surface area of ​​the first section 321 can be equal to the surface area of ​​the underside of the light-emitting device 330. Furthermore, the surface area of ​​the second section 322 can be larger than the surface area of ​​the underside of the light-emitting device 330.

[0178] For example, the first section 321 of the seating layer 320 can support the light-emitting device 330 by being in contact with the underside of the light-emitting device 330, and the second section 322 can be connected to and arranged beneath the first section 321. For example, the second section 322 can be arranged on the wiring substrate 310. For example, the second section 322 can be positioned in contact with the wiring substrate 310.

[0179] The seating layer 320 can comprise the cured resin layer. For example, the seating layer 320 can be made from the resin material, such as photoresist, and then cured. For example, such a seating layer 320 can have the adhesive strength to fix the light-emitting device 330 during the assembly process of the light-emitting device 330 and can then be cured to support the light-emitting device 330.

[0180] The display device 300 can include the first connecting electrode 340, which electrically connects the first electrode 312 to one side of the light-emitting device 330. Such a first connecting electrode 340 can be made of a metal with high electrical conductivity, for example Al, Mo, Cu, Ag or Pt.

[0181] As an exemplary embodiment, one side of the light-emitting device 330 to which the first connecting electrode 340 is connected can be the side surface of the light-emitting layer 333 of the light-emitting device 330. For example, the first connecting electrode 340 can be laterally connected to the surface formed by the light-emitting layer 333 of the light-emitting device 330. Such a first connecting electrode 340 can be electrically connected to the side surface of the first conductive semiconductor layer 331 of the light-emitting device 330.

[0182] Such a first connecting electrode 340 can be formed along the side surface of the light-emitting device 330 and the top surface of the seating layer 320. In this respect, the first connecting electrode 340 can comprise the side surface 342, which is arranged on the side surface of the light-emitting device 330, and the bottom surface 343, which is arranged on the top surface of the seating layer 320.

[0183] Since the seating layer 320 has the first section 321, the second section 322, and the third section 323, the side surface 342 and the underside 343 of the first connecting electrode 340 can be connected to each other with a gentle inclination. Therefore, the first connecting electrode 340 can be designed to be stably connected across the entire display without any interruption.

[0184] Other undescribed components may be the same as those described in the reference to Fig. embodiment as described in 11A.

[0185] Fig. Figure 12 is a top view showing a single subpixel of a display device that uses a light-emitting semiconductor device according to an embodiment of the present disclosure.

[0186] Fig. Figure 12 shows a top view of each subpixel area. Fig. 12 is a width W of the in the Fig. 11A and Fig. The subpixel area shown in 11B is displayed accordingly. Fig. Figure 12 shows forms of the second electrode 360, the second connecting electrode 361 and the light-emitting device 330.

[0187] Fig. Figures 13 to 30 are cross-sectional views showing a process for manufacturing a display device using a light-emitting semiconductor device according to an embodiment of the present disclosure.

[0188] The following refers to Fig. 13 to 30 describe step by step the process for manufacturing the display device using the light-emitting semiconductor device according to an embodiment of the present disclosure.

[0189] First, with reference to the Fig. In sections 13 to 17, a process for assembling the light-emitting device 330 onto the wiring substrate 310 is briefly described. In this respect, one form of the wiring substrate 310 can be expressed differently than the form of the wiring substrate 310 described above.

[0190] With reference to Fig. 13 The light-emitting devices 330a, 330b and 330c can be mounted on a mounting substrate 400.

[0191] The mounting substrate 400 can comprise a mounting electrode 431, 432, 430 and an insulating layer 420 on a base substrate 410. For example, a partition 440, defining a mounting space in which the light-emitting devices 330a, 330b, and 330c are assembled, can be arranged on the insulating layer 420.

[0192] Therefore, the light-emitting devices 330a, 330b, and 330c can be mounted on the mounting substrate 400 using a magnet 500. In this context, the light-emitting devices 330a, 330b, and 330c can, as mentioned above, include the magnetic layer 337 (see Fig. 18).

[0193] For example, the assembly process of such light-emitting devices 330a, 330b and 330c can be carried out in a liquid.

[0194] As mentioned above, to provide vertical selectivity for the light-emitting devices 330a, 330b, and 330c, it can be advantageous for the lower contact area to be larger than the upper contact area. For this purpose, the contact area size can be adjusted, for example, by structuring and / or etching processes of passivation layers of the light-emitting devices 330a, 330b, and 330c. Alternatively, as another example, the upper second conductive semiconductor layer 332 can be partially etched to create the difference in the upper and lower contact area sizes.

[0195] In this respect, the light-emitting devices 330a, 330b and 330c can include the red light-emitting device 330a, the green light-emitting device 330b and the blue light-emitting device 330c. Although the three light-emitting devices in Fig. As shown in Figure 13 and the drawings below, further light-emitting devices 330a, 330b and 330c can be assembled using the magnet 500.

[0196] The light-emitting devices 330a, 330b and 330c, which are mounted on the mounting substrate 400 using the magnet 500, can be fixed by a dielectrophoresis (DEP) force when an electric field is applied to the mounting electrode 430.

[0197] With reference to Fig. 14. The assembled light-emitting devices 330a, 330b, and 330c can be attached to a temporary substrate 600 for transfer to the wiring substrate 310. Such a temporary substrate 600 can be a type of stamp.

[0198] With reference to Fig. 15. The light-emitting devices 330a, 330b and 330c can be removed from the mounting substrate 400 and transferred to the temporary substrate 600.

[0199] Next, with reference to Fig. 16. The light-emitting devices 330a, 330b, and 330c are moved towards the wiring substrate 310 for illumination. In this context, an adhesive layer 320 is arranged on the wiring substrate 310 so that the light-emitting devices 330a, 330b, and 330c can sit on the adhesive layer 320. Such an adhesive layer 320 can subsequently be cured to form the seating layer 320 described above.

[0200] With reference to Fig. 17. The temporary substrate 600 can be removed and the light-emitting devices 330a, 330b and 330c can be transferred to the wiring substrate 310.

[0201] The following refers to the Fig. 18 to 30 describe a process for manufacturing the display device 300 step by step.

[0202] Fig. Figure 18 shows a state in which the light-emitting device 330 is transferred to the wiring substrate 310. The process for manufacturing the display device 300 by fabricating the single light-emitting device 330 as the unit subpixel is described below.

[0203] With reference to Fig. 18 A process for attaching the light-emitting device 330 to the wiring substrate 310, which is equipped with the adhesive layer 320 and the first electrode 312, can be carried out such that the first surface of the light-emitting device 330 is in contact with the adhesive layer 320. Fig. 19 is a top view showing the Fig. The condition shown in section 18 is shown.

[0204] In this respect, the first surface of the light-emitting device 330 can be the underside on which the magnetic layer or the lower electrode 337 of the light-emitting device 330 is arranged.

[0205] For example, if the magnetic layer 337 is formed on the back side of the light-emitting device 330 to increase the light emission efficiency, the magnetic layer 337 can be deposited on the light-emitting device 330 before it is mounted. In some cases, such a magnetic layer 337 can be used as an electrode.

[0206] The light-emitting device 330 can comprise passivation layers 334 and 335. In this respect, the passivation layer 334, which is arranged on a top surface, can be thicker than the passivation layer 335, which is arranged on a bottom surface.

[0207] With reference to Fig. 20 The wiring substrate 310, on which the light-emitting device 330 is mounted, can be etched. In such a process, contaminants on the top surface of the wiring substrate 310 can be removed. For example, in such a process, a top surface 336 of the light-emitting device 330 can be exposed.

[0208] In one example, the passivation layer 335 located on the underside can be removed by the etching process, thereby exposing the side surface of the light-emitting device 330.

[0209] Therefore, the passivation layer covering the top surface 336 of the light-emitting device 330 can be removed in the etching process, thus preventing a short circuit in the light-emitting device 330 without a separate post-processing process.

[0210] Furthermore, since no additional process clearance is required to open the top surface 336 of the light-emitting device 330, miniaturization of the chip can be achieved, and this can also be advantageous with regard to wiring precision for a wiring process that can take place after chip fabrication.

[0211] Additionally, a section of the adhesive layer 320 can be etched and removed, so that the adhesive layer 320 comprises the first section 321 in contact with the light-emitting device 330 and the second section 322, which is located beneath the first section 321. Such an adhesive layer 320 can be the same component as the seating layer 320 described above. Therefore, the process of etching the adhesive layer 320 can be carried out in a depth direction of the wiring substrate 310.

[0212] In one example, by stepwise adjusting the etching process, the adhesive layer 320 can be etched such that it encompasses the first section 321, the second section 322 located beneath the first section 321, and the third section 323, which connects the first section 321 and the second section 322 to each other with the gentle inclination described above with reference to Fig. 11B was described.

[0213] Next, with reference to Fig. 21 a photoresist (PR) 710 is coated and structured to define a via to connect the first connecting electrode 340 and the first electrode 312 together.

[0214] In this context, a through-hole section 711 can be formed in a section of the photoresist 710 where the through-hole connection is to be defined.

[0215] With reference to Fig. 22 a through-hole 312a can be defined by etching using such a through-hole section 711 to expose a section of the first electrode 312.

[0216] With reference to Fig. For example, a section of the first electrode 312 can be removed to connect the first connecting electrode 340 and the first electrode 312. If, for example, the first electrode 312 is used as the data electrode, an exposed section 312b with a deeper shape can be defined, and the first electrodes 312 can be separated from each other in their respective subpixel regions.

[0217] As an exemplary embodiment, the formation of the first connecting electrode 340 can include etching the section of the adhesive layer 320 to open the section of the first connecting electrode 340 and define the exposed part 312b.

[0218] After that, a form such as in Fig. 24 shown, can be achieved when the photoresist 710 is removed.

[0219] Next, the process for forming the first connecting electrode 340, which connects one side of the light-emitting device 330 to the first electrode 312, can be carried out. For this purpose, a metal layer 340a can be deposited on the side and top surfaces of the light-emitting device 330. A metal with high electrical conductivity, such as Al, Mo, Cu, Ag, or Pt, can be used as the metal layer material. Additionally, a metal such as Cr or Ti can be used to increase the adhesion between a magnetic layer 327 and the metal layer 340a.

[0220] Such a first connecting electrode 340 can be formed stably without interruption by the gentle inclination along the side surface of the light-emitting device 330 and the adhesive layer 320.

[0221] For example, in the case of the red light emitting device, Au and AuBe can be formed and heat-treated to form an ohmic metal, and then the magnetic layer 327 and the metal layer 340a can be formed.

[0222] With reference to Fig. 25 the vertical height difference 341 can be formed in a section in which the metal layer 340a for the first connecting electrode 340 is connected to the first electrode 312.

[0223] Next, with reference to Fig. 26 a photoresist 720 is formed to structure the metal layer 340a.

[0224] With reference to Fig. 27. The photoresist 720 can be structured to etch the metal layer 340a, which is arranged on the light-emitting device 330. Therefore, the structured photoresist 721 can open the top of the light-emitting device 330.

[0225] With reference to Fig. 28 The top surface of the light-emitting device 330 can be opened by etching the metal layer 340a. Accordingly, the first connecting electrode 340 can be formed, which connects a section of the side surface of the light-emitting device 330 to the first electrode 312.

[0226] A sputtering device can be used in the process of forming the metal layer 340a to form the first connecting electrode 340 on the light-emitting device 330 with a circular shape.

[0227] In one example, metal can be formed on the underside and side surfaces of the light-emitting device 330 before assembly. When this metal is formed on the underside and side surfaces of the light-emitting device 330, and the light-emitting devices 330 are then distributed in the liquid and assembled, an electrode is formed on the underside of the light-emitting device 330. This creates a strong electric field, which stabilizes the light-emitting device 330 in its mounting hole and improves assembly speed. Furthermore, when the light-emitting device 330 is connected to the first connecting electrode 340 after assembly, the electrical connection is improved by the metal formed on the light-emitting device 330, thus enhancing the lighting efficiency and uniformity.

[0228] The passivation layer 334 can be arranged on the top side of the light-emitting device 330 to which the first connecting electrode 340 is connected.

[0229] If the structured photoresist 721 is subsequently removed, a state can be achieved that is described in Fig. 29 is shown.

[0230] With reference to Fig. 30 The planarization layer 350 can be formed, extending to the top of the light-emitting device 330. Such a planarization layer 350 can cover the light-emitting device 330 and the first connecting electrode 340.

[0231] A process can then be carried out to form the second connecting electrode 361, which is electrically connected to the other side of the light-emitting device 330 on the planarization layer 350. Thus, when the second connecting electrode 361 is formed, the Fig. The state shown in 11A can be achieved. Furthermore, by forming the second electrode 360, the indicator device 300 can be activated as shown in Fig. 10 are shown, to be produced.

[0232] Fig. Figure 31 is a cross-sectional view showing a display device using a light-emitting semiconductor device according to a comparative example.

[0233] With reference to Fig. Figure 31 shows an example in which a wiring substrate 10 has a light-emitting device 30 and a first electrode 12 arranged on a substrate 11, and the light-emitting device 30 and the first electrode 12 are connected to each other by a connecting electrode 13.

[0234] In this respect, the light-emitting device 30 comprises a first conductive semiconductor layer 31 and a second conductive semiconductor layer 32, and a seating layer 20 is arranged below the first conductive semiconductor layer 31.

[0235] In this respect, the seating layer 20 has the same area size as a bottom surface of the light-emitting device 30. That is, the seating layer 20 can have essentially the same area size as the first conductive semiconductor layer 31.

[0236] Fig. Figure 32 is a photograph showing part of a display device that uses a light-emitting semiconductor device according to a comparative example. Fig. 33 is an enlarged photograph of section A from Fig. 32.

[0237] With reference to Fig. Figure 32 mainly shows an appearance of the light-emitting device 30.

[0238] With reference to Fig. 33 an undercut occurs at a section where the seating layer 20 and the first conductive semiconductor layer 31 of the light-emitting device 30 are connected, resulting in an interruption of the connecting electrode 13 (a section B).

[0239] After the light-emitting device 30 is mounted on an adhesive layer forming the seating layer 20, an undercut may occur during a manufacturing or structuring process. Therefore, during the formation of the connecting electrode 13, it is possible that the connecting electrode 13 may separate at such an undercut section. Ultimately, the light-emitting device 30 may not be electrically connected to the wiring substrate 10.

[0240] If the thickness of the connecting electrode 13 is large during its formation, it is difficult to set up an ashing process for structuring the connecting electrode 13. In this case, metal can be etched onto a side surface of the light-emitting device 30, thereby separating the connecting electrode 13.

[0241] Fig. Figure 34 is a photograph showing part of a display device that uses a light-emitting semiconductor device according to an embodiment of the present disclosure. Fig. 35 is an enlarged photograph of section C from Fig. 34.

[0242] With reference to Fig. 34 corresponds to one in Fig. 34 shown condition, based on the above. Fig. 10 and Fig. 11 described condition. Additionally, show Fig. 34 and Fig. 35 states that correspond to the manufacturing process described above.

[0243] With reference to Fig. 35 shows that the first connecting electrode 340 is connected to the section where the seating layer 320 and the first conductive semiconductor layer 331 of the light-emitting device 330 are connected to each other (a section D) without being separated.

[0244] Therefore, when the pattern of the seating layer 320 is formed to create the first connecting electrode 340, the first connecting electrode 340 is well connected to and positioned between the light-emitting device 330 and the first electrode 312, thereby reducing a defect rate in an illumination process.

[0245] According to the embodiment of the present disclosure, the level of the seating layer 320 can be reduced step by step so that the first connecting electrode 340 can be stably formed, thereby reducing the thickness of the metal to be deposited. This can shorten the metal etching time.

[0246] In one example, if the photoresist is formed in such a way that its shape is controlled during the photoresist structuring process, a shape of the seating layer (the adhesive layer) 320 is generated based on the shape of the photoresist. If, in this respect, the inclination of the seating layer 320 is gently shaped, the first connecting electrode 340 can be formed along the inclination and can be stably formed without separating.

[0247] The features, structures, effects, and the like described in the embodiments above are contained in at least one embodiment of the present disclosure and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like depicted in each embodiment can be combined or modified by a person with ordinary knowledge in the field to which the embodiments belong for other embodiments. Therefore, content relating to such combinations and modifications should be interpreted as falling within the scope of the present disclosure.

Claims

[1] Display device which uses a light-emitting semiconductor device, the display device comprising: a wiring substrate with a first electrode arranged on it; the light-emitting device which is arranged on the wiring substrate, to form a unit subpixel; a seating layer arranged between the wiring substrate and the light-emitting device, wherein the seating layer comprises a first section in contact with the light-emitting device and a second section located below the first section and having an area larger than the area of ​​the first section; a first connecting electrode that electrically connects the first electrode to a side of the light-emitting device that corresponds to a shape of the seating layer; a planarizing layer covering the light-emitting device and the first connecting electrode; and a second connecting electrode, which is arranged on the planarization layer and is electrically connected to the other side of the light-emitting device, wherein the seating layer further comprises a third section which connects the first section and the second section with a gentle inclination. [2] Display device according to claim 1, wherein the first section and the second section form a step shape. [3] Display device according to claim 1 or 2, wherein the area size of the first section is equal to the area size of a bottom surface of the light-emitting device. [4] Display device according to any one of claims 1 to 3, wherein the light-emitting device is arranged on a center of the second section. [5] Display device according to any one of claims 1 to 4, wherein one side of the light-emitting device which is connected to the first connecting electrode is a side surface of a light-emitting layer of the light-emitting device. [6] Display device according to claim 5, wherein the first connecting electrode connects the first electrode to a lower section of the side surface of the light-emitting layer of the light-emitting device. [7] Display device according to any one of claims 1 to 6, wherein a passivation layer is arranged on an outer surface of the light-emitting device and the first connecting electrode is arranged under the passivation layer. [8] Display device according to any one of claims 1 to 7, wherein the first connecting electrode is connected to the first electrode at one end of the second section of the seating layer. [9] Display device according to any one of claims 1 to 8, wherein the first connecting electrode is connected to a lower electrode of the light-emitting device. [10] Display device according to any one of claims 1 to 9, wherein the second connecting electrode comprises a transparent electrode. [11] Display device according to any one of claims 1 to 10, further comprising a second electrode connected to the second connecting electrode. [12] Display device according to any one of claims 1 to 11, wherein the seating layer comprises a hardened resin layer. [13] Display device which uses a light-emitting semiconductor device, the display device comprising: a wiring substrate with a first electrode arranged on it; the light-emitting device that is arranged on the wiring substrate; a seating layer arranged between the wiring substrate and the light-emitting device, bearing a first surface of the light-emitting device and having an area size that is larger than the area size of the first surface; a first connecting electrode that electrically connects the first electrode to one side of the light-emitting device; a planarizing layer covering the light-emitting device and the first connecting electrode; and a second connecting electrode, which is arranged on the planarization layer and is electrically connected to the other side of the light-emitting device, wherein the seating layer comprises a first section which supports the first surface and a second section which is arranged below the first section and has an area greater than the area of ​​the first section, the seating layer further includes a third section that connects the first and second sections with a gentle incline. [14] Display device according to claim 13, wherein the area size of the first section is equal to the area size of a bottom surface of the light-emitting device. [15] Method for manufacturing a display device which uses a light-emitting semiconductor device, the method comprising: Arranging the light-emitting device on a wiring substrate with an adhesive layer and a first electrode, such that a first surface of the light-emitting device is in contact with the adhesive layer; Etching of the adhesive layer in one depth direction of the wiring substrate; Forming a first connecting electrode that connects one side of the light-emitting device to the first electrode along a top side of the adhesive layer; Forming a planarization layer covering the light-emitting device and the first connecting electrode; and Forming a second connecting electrode, electrically connected to the other side of the light-emitting device, on the planarization layer, including the etching of the adhesive layer: Etching the adhesive layer, such that the adhesive layer comprises a first section in contact with the light-emitting device and a second section arranged below the first section and having an area larger than the area of ​​the first section, and Etching the adhesive layer so that the adhesive layer includes a third section which connects the first section and the second section with a gentle inclination. [16] The method of claim 15, wherein forming the first connecting electrode comprises: Etching a section of the adhesive layer to open a section of the first connecting electrode in order to define an exposed section.

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