WAFER PROBE STATION AND METHOD FOR CREATING AN EVALUATION MODEL FOR CALIBRATION OF A PROBE ARRANGEMENT

Abstract

To determine whether the current temperature of a probe assembly is stable for calibration at the auxiliary site, a wafer probe station verifies a measured air standard data set with a predetermined signal range or verifies an estimated measurement time range with a predetermined time window. To determine whether an adjustment of the current temperature of a probe assembly at the wafer site is required, a wafer probe station verifies a measured air standard data set with a predetermined signal range or an estimated measurement time range with a predetermined time window. To determine whether the current temperature of a probe assembly is ready for testing a semiconductor device, a wafer probe station checks a measured air standard data set with a predetermined signal range.

Description

This application claims priority to U.S. Provisional Application No. 63 / 530,768, filed Aug. 4, 2023, the entire contents of which are incorporated herein by reference.BACKGROUND OF THE INVENTIONThe disclosure relates to a wafer probe station. More specifically, the disclosure relates to how the wafer probe station reduces the error caused by temperature variations.In some wafer probe stations, the workspace is divided into two separate regions, one of which is referred to as a wafer location ("wafer site") for testing a semiconductor device (i.e., device under test, DUT) and the other of which is referred to as an auxiliary location ("auxiliary site") for another separate process for calibrating a probe assembly, so that the probe assembly must proactively or passively reciprocate between the wafer location and the auxiliary location for different processes. Because both the test process and the calibration process are sensitive to temperature variations and generally only a temperature controller is installed at the wafer location for heating or cooling the temperature of the probe assembly, the wafer location and the auxiliary location may be changed multiple times during the calibration process for heating or cooling the temperature of the probe assembly to ensure that the temperature differential of the probe assembly at the wafer location and the auxiliary location is acceptable and practicable for completion of the calibration process. One problem with the prior art is that it is difficult to determine whether the current temperature of the probe assembly is stable for calibration at the auxiliary site and when the probe assembly needs to be heated or cooled in the calibration process at the wafer site. Another problem is that it is difficult to determine whether the current temperature of the probe assembly is suitable for testing a semiconductor device while the probe assembly is being heated or cooled at the wafer location. If these problems are not solved, the calibration results and the test results are unreliable.SUMMARY OF THE INVENTIONTo overcome the above problems, the present disclosure provides a wafer probe station.In a first embodiment of the wafer probe station, the wafer probe station may include a wafer location for testing a semiconductor device and an auxiliary location for calibration. The auxiliary location is separate from the wafer location. The wafer probe station may also include a probe assembly and a computer electrically connected to the probe assembly. The probe assembly may be configured to measure an air standard at the auxiliary location to provide an air standard dataset. The measurement of the air standard means that the probe assembly performs a measurement in the air, i.e., the probe assembly performs the measurement without touching any test circuits of a calibration substrate at the auxiliary location or any semiconductor devices of a wafer at the wafer location. The computer may be configured to check the air standard data set with a predetermined range of measurements to determine whether the temperature of the probe assembly is stable for calibration at the auxiliary site. Moreover, the probe assembly may be configured to measure a calibration standard at the auxiliary site when the computer determines that the temperature of the probe assembly is stable for calibration at the auxiliary site. Measuring the calibration standard means that the probe assembly makes a measurement on a calibration substrate, i.e., the probe assembly performs the measurement while contacting a target test circuit of a calibration substrate at the auxiliary location. In the first embodiment of the wafer probe station, the wafer probe station is capable of appropriately determining whether the current temperature of the probe assembly is stable for calibration at the auxiliary site.In a second embodiment of the wafer probe station, the wafer probe station may include a wafer location for testing a semiconductor device and an auxiliary location for calibration. The auxiliary location is separate from the wafer location. The wafer probe station may also include a probe assembly and a computer electrically connected to the probe assembly. The probe assembly may be configured to measure an air standard at the auxiliary location to generate an air standard dataset prior to measuring a calibration standard. The measurement of the air standard means that the probe assembly performs a measurement in the air, i.e., the probe assembly performs the measurement without touching any test circuits of a calibration substrate at the auxiliary location or any semiconductor devices of a wafer at the wafer location. Measurement of the calibration standard means that the probe assembly makes a measurement on a calibration substrate, i.e., the probe assembly performs the measurement while touching a target test circuit of a calibration substrate at the auxiliary location. The computer may be configured to verify the air standard data set with a predetermined signal range to determine whether adjustment of the temperature of the probe assembly at the wafer location is required. The wafer probe station may also include a chuck mover, and the chuck mover may be configured to move a wafer side chuck to the probe assembly when the computer determines that adjustment of the temperature of the probe assembly at the wafer location is required. In the second embodiment of the wafer probe station, the wafer probe station is capable of appropriately determining whether adjustment of the current temperature of the probe assembly at the wafer location is required.In a third embodiment of the wafer probe station, the wafer probe station may comprise a probe assembly and a computer electrically connected to the probe assembly. The probe assembly may be configured to test a semiconductor device at a wafer location and calibrate it at an auxiliary location that is remote from the wafer location. The computer may be configured to estimate a measurement time range for the probe assembly to measure a calibration standard at the auxiliary location and verify the measurement time range with a predetermined time window to determine whether a temperature of the probe assembly is stable for calibration at the auxiliary location. Measuring the calibration standard means that the probe assembly performs a measurement on a calibration substrate, i.e., the probe assembly performs the measurement while contacting a target test circuit of a calibration substrate at the auxiliary location. The computer may be further configured to record calibration data obtained by measuring the calibration standard at the auxiliary location by the probe assembly when the computer determines that the temperature of the probe assembly is stable for calibration at the auxiliary location. For the wafer probe station, the predetermined time window may include an open time and a close time defined based on a predetermined measurement range. In the third embodiment of the wafer probe station, the wafer probe station is capable of appropriately determining whether the current temperature of the probe assembly is stable for calibration at the auxiliary site.In a fourth embodiment of the wafer probe station, the wafer probe station may include a probe assembly and a computer electrically connected to the probe assembly. The probe assembly may be configured to test a semiconductor device at a wafer location and calibrate it at an auxiliary location remote from the wafer location. The computer may be configured to estimate a measurement time range for the probe assembly to measure a calibration standard at the auxiliary location before the probe assembly measures the calibration standard and verify the measurement time range with a predetermined time window to determine whether an adjustment of the temperature of the probe assembly at the wafer location is required. Measuring the calibration standard means that the probe assembly makes a measurement on a calibration substrate, i.e., the probe assembly performs the measurement while contacting a target test circuit of a calibration substrate at the auxiliary location. The wafer probe station may also include a chuck mover, and the chuck mover may be configured to move a wafer site chuck to the sample assembly when the computer determines that adjustment of the temperature of the sample assembly at the wafer site is required. For the wafer probe station, the predetermined time window may include an opening time and a closing time defined based on a predetermined signal range. In the fourth embodiment of the wafer probe station, the wafer probe station is capable of appropriately determining whether adjustment of the current temperature of the probe assembly at the wafer location is required.In a fifth embodiment of the wafer probe station, the wafer probe station may include a wafer location for testing a semiconductor device and an auxiliary location for calibration. The auxiliary location is separate from the wafer location. The wafer probe station may also include a probe assembly and a computer electrically connected to the probe assembly. The probe assembly may be configured to measure an air standard at the wafer location to provide an air standard dataset. The measurement of the air standard means that the probe assembly performs a measurement in the air, i.e., the probe assembly performs the measurement without touching any test circuits of a calibration substrate at the auxiliary location or any semiconductor devices of a wafer at the wafer location. The computer may be configured to check the air standard data set with a predetermined signal range to determine whether a temperature of the probe assembly is ready for testing the semiconductor device at the wafer location. In the fifth embodiment of the wafer probe station, the wafer probe station is capable of appropriately determining whether the current temperature of the probe assembly is ready for the semiconductor device test.In a sixth embodiment of the wafer probe station, the wafer probe station may comprise a probe assembly and a computer electrically connected to the probe assembly. The probe assembly may be configured to test a semiconductor device at a wafer location and calibrate it at an auxiliary location remote from the wafer location. The computer may be configured to check a duration of adjusting a temperature of the probe assembly with a predetermined time window to determine whether the temperature of the probe assembly is ready for testing the semiconductor device at the wafer location. In the sixth embodiment of the wafer probe station, the wafer probe station is capable of appropriately determining whether the current temperature of the probe assembly is ready for testing the semiconductor device.As set forth above, the intended wafer probe station may suitably determine whether the current temperature of the probe assembly is stable for calibration at the auxiliary site by verifying the measured air standard data set with a predetermined signal range or the estimated measurement time range with a predetermined time window. In addition, the wafer probe station is able to determine appropriately whether an adjustment of the current temperature of the probe arrangement at the wafer location is required by verifying the measured air standard data set with a predefined signal range or by verifying the estimated measurement time range with a predefined time window. Moreover, the wafer probe station is able to determine appropriately whether the current temperature of the probe assembly is ready for testing the semiconductor device by verifying the measured air standard data set with a predetermined signal range or by verifying the time duration of the temperature adjustment of the probe assembly with a predetermined time window. Therefore, the wafer probe station provided can solve the above problems in various ways.To overcome the above problems, the present disclosure also provides various methods for creating an evaluation model for calibrating a probe assembly.A first method of creating an evaluation model for calibration of a probe assembly may include the steps of: sequentially measuring, by the probe assembly, an air standard at a wafer location or at an auxiliary location to create a plurality of air standard raw datasets corresponding to a substantially same temperature; determining, by a computer, a signal range including an upper limit and a lower limit based on the plurality of air standard raw datasets; and creating, by the computer, the evaluation model based on the signal range.A second method of creating an evaluation model for calibration of a probe assembly may include the steps of: measuring, by the probe assembly, an air standard at a wafer location to create a raw wafer location air standard data set corresponding to a first temperature; sequentially measuring, by the probe assembly, an air standard at an auxiliary location to create a plurality of raw auxiliary location air standard data sets each corresponding to a plurality of different second temperatures; determining, by a computer, a signal range including an upper limit and a lower limit based on a plurality of raw air standard data sets including the raw wafer location air standard data set and the plurality of raw auxiliary location air standard data sets; creating the evaluation model by the computer based on the signal range.A third method of creating an evaluation model for calibration of a probe assembly may include the steps of: sequentially measuring, by the probe assembly, an air standard at a wafer location or at an auxiliary location to create a plurality of air standard raw datasets corresponding to a substantially same temperature; determining, by a computer, a signal range including an upper limit and a lower limit based on the plurality of air standard raw datasets; determining, by the computer, a time window including an opening time and a closing time based on the signal range; and creating, by the computer, the evaluation model based on the time window.A fourth method of creating an evaluation model for calibration of a probe assembly may include the steps of: measuring, by the probe assembly, an air standard at a wafer location to create a raw wafer location air standard data set corresponding to a first temperature; sequentially measuring, by the probe assembly, an air standard at an auxiliary location to create a plurality of raw auxiliary location air standard data sets each corresponding to a plurality of different second temperatures; determining, by a computer, a signal range including an upper limit and a lower limit based on a plurality of raw air standard data sets including the raw wafer location air standard data set and the plurality of raw auxiliary location air standard data sets; determining, by the computer, a time window comprising an opening time and a closing time based on the signal range; and creating, by the computer, the evaluation model based on the time window.As set forth above, the provided methods can each create a suitable evaluation model for the calibration of a probe arrangement. In a calibration process of the wafer probe station, one or more of the established evaluation models may be used to determine whether the current temperature of the probe assembly is stable for calibration at the auxiliary site and to determine whether an adjustment of the current temperature of the probe assembly at the wafer site is necessary. In a test process of the wafer probe station, one or more of the established evaluation models may also facilitate determining whether the current temperature of the probe assembly is ready for testing a semiconductor device while the probe assembly is heated or cooled.The present disclosure further provides a semiconductor device under test with the above-mentioned wafer probe station.The summary of the invention is not intended to limit the claimed invention, but merely convey a basic profile of the claimed invention. The details of the claimed invention are described with reference to various embodiments which are presented below.BRIEF DESCRIPTION OF THE DRAWINGSFIG. 1 shows a schematic view of a wafer probe station in accordance with some embodiments of the present disclosure. FIG. 2A is a schematic view of the upper limit and the lower limit of the first predetermined signal range according to some embodiments of the present disclosure. FIG. 2B shows a schematic view of the upper limit and the lower limit of the first predetermined signal range according to some other embodiments of the present disclosure. FIG. 2C shows a schematic view of the upper limit and the lower limit of the first predetermined signal range according to some other embodiments of the present disclosure. FIG. 2D shows a schematic view of the upper limit and the lower limit of the first predetermined signal range according to some other embodiments of the present disclosure. FIG. 3A is a schematic view of the upper limit and the lower limit of the second predetermined signal range according to some embodiments of the present disclosure. FIG. 3B shows a schematic view of the upper limit and the lower limit of the second predetermined signal range according to some other embodiments of the present disclosure. FIG. 4 is a schematic diagram illustrating verification of the measurement time range TR 1 with a predetermined time window TW according to some embodiments of the present disclosure. FIG. 5 is a schematic diagram illustrating how the measurement time range TR 2 is checked with a predetermined time window TW according to some embodiments of the present disclosure. FIG. 6 is a flow chart describing a method for creating an evaluation model for calibrating a probe assembly, in accordance with some embodiments of the present disclosure. FIG. 7 is a flow chart describing a method for creating an evaluation model for calibrating a probe assembly, in accordance with some other embodiments of the present disclosure. FIG. 8 is a flow chart describing a method for creating an evaluation model for calibrating a probe assembly, in accordance with some other embodiments of the present disclosure. FIG. 9 is a flow chart describing a method for creating an evaluation model for calibrating a probe assembly, in accordance with some other embodiments of the present disclosure. FIGS. 10A and 10B together illustrate a general operation of a wafer probe station according to some embodiments of the present disclosure.DETAILED DESCRIPTION OF THE INVENTIONThe embodiments disclosed below are not intended to limit the claimed invention to particular environments, applications, structures, methods, or situations. In the accompanying drawings, elements which are not directly related to the claimed invention are not shown. Dimensions and dimensional relationships between individual elements in the accompanying drawings are merely exemplary and are not intended to limit the claimed invention. Unless expressly stated, like element numbers may correspond to like elements in the following description without this contradiction to the claimed invention.The terminology used herein is for the purpose of describing the embodiments only and is not intended to be limiting of the claimed invention. The singular forms also include the plural forms unless the context clearly indicates otherwise. The terms "comprises," "including," "includes," "including," etc., specify the presence of stated features, integers, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, operations, elements, components, and / or groups thereof. The term "and / or" includes any combination of one or more of the listed features. Although the terms "first" and "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another element. For example, a first element described below could also be referred to as a second element without departing from the spirit and scope of the claimed invention.FIG. 1 shows a schematic view of a wafer probe station 1 according to some embodiments of the present disclosure. The contents shown in FIG. 1 are merely illustrative of embodiments of the present disclosure and should not be construed as limitations of the claimed invention.As shown in FIG. 1, the wafer probe station 1 includes a probe assembly 10 and a computer 20 electrically connected to the probe assembly 10. Moreover, the wafer probe station 1 comprises a work area divided into a wafer location WS and an auxiliary location AS separated from the wafer location WS. The wafer location WS is provided for testing a semiconductor device 40, while the auxiliary location AS is provided for calibrating the probe arrangement 10 with different calibration standards CS. Calibration of the probe assembly 10 with different calibration standards CS means that the probe assembly 10 measures different test circuits disposed on a calibration substrate. In an embodiment of the present disclosure, the calibration substrate may be a printed circuit board including one or more test circuits made of multiple metal lines to form different test circuits of standards. The metal lines include a plurality of electrical contact pads. The test circuits include an OPEN test circuit, a SHORT test circuit, a LOAD test circuit, a THROUGH test circuit, and a LINE test circuit.The probe assembly 10 may include one or more probes 12 and one or more cables 14 or other connection media that serve to electrically connect the probe(s) 12 to the computer 20. Moreover, each probe 12 may be one of the various known probes or probe cards (e.g., an RF probe or a multi-contact probe) and arranged to test the semiconductor device 40 at the wafer location WS and measure various calibration substrates for calibration at the auxiliary location AS.The computer 20 may be implemented as a main control unit including a control host 22 and an analyzer 24. The control host 22 functions as a system controller configured to generate the data to be checked and generate control commands for the operation of the analyzer 24. The control host 22 may communicate with the analyzer 24 and control the analyzer 24 by signals transmitted via a signal line (e.g., a GPIB bus). In one aspect of the present disclosure, the analyzer 24 may be realized by a vector network analyzer (VNA) with a source measurement unit (SMU). The analyzer 24 may function as a signal generation and analysis assembly used to transmit data, receive measurement data, and perform analysis of the measurements.The wafer probe station 1 may also include a wafer location chuck 32 at the wafer location WS and an auxiliary location chuck 34 at the auxiliary location AS. The semiconductor device 40 may be placed on the wafer site chuck 32 to be tested at the wafer site WS, while various calibration substrates may be placed on the auxiliary site chuck 34 to be measured at the auxiliary site AS. In some embodiments, the wafer probe station 1 may also include a chuck mover 30 to swap the wafer location WS with the auxiliary location AS, and vice versa, when the probe 12 is stationary during the test and calibration process. On the other hand, when the probe 12 is made movable, the wafer probe station 1 may include a probe moving device (not shown) for moving the probe 12 from another wafer location WS or auxiliary location AS so that the wafer probe station 1 does not need the chuck moving device 30. That is, the probe mover could be an electrically actuated positioning assembly that can be configured to selectively adjust a relative orientation between the probes 12 of the probe assembly 10 and / or between the probe assembly 10 and the semiconductor device 40.In the first embodiment of the wafer probe station 1, the wafer probe station 1 can rely on a predetermined signal range to determine whether the current temperature of the probe assembly 10 is stable for calibration at the auxiliary site AS.In addition, the computer 20 may be configured to check the air standard data set with a predetermined signal range to determine whether a temperature of the probe assembly 10 is stable for calibration at the auxiliary location AS. When the air standard data set falls within the predetermined signal range, the computer 20 determines that the probe assembly 10 is stable for calibration at the auxiliary location AS. If false, the computer 20 determines that the probe assembly 10 is not stable enough for calibration at the auxiliary site AS. The probe assembly 10 may be further configured to measure a calibration standard CS at the auxiliary location AS when the computer 20 determines that the temperature of the probe assembly 10 is stable for calibration at the auxiliary location AS. The measurement of the calibration standard CS means that the probe arrangement 10 performs a measurement on a calibration substrate.FIGS. 2A, 2B, 2C and 2D illustrate various predetermined signal ranges for the first embodiment of the wafer probe station 1 in various situations. The contents shown in FIGS. 2A-2D are illustrative only and are not to be construed as limitations on the claimed invention. To clarify FIGS. 2A, 2B, 2C, and 2D, the predetermined signal ranges shown therein are all illustrated in a rectilinear shape instead of the actual waveforms with variations.In FIG. 2A, an initial predetermined signal range R 1 including an upper limit and a lower limit is illustrated. The upper limit is defined by multiplying an adaptive coefficient and an upper limit data set by maximum values of a plurality of air standard raw data sets at each frequency of a bandwidth, while the lower limit is defined by multiplying the adaptive coefficient and a lower limit data set by minimum values of the plurality of air standard raw data sets at each frequency of the bandwidth. In this case, the plurality of air standard raw data sets correspond to a substantially identical temperature. More specifically, the plurality of raw air standard data sets may be prepared in advance by sequentially measuring an air standard at the wafer location WS or the auxiliary location AS by the probe assembly 10 at a natural temperature (e.g., 25° C.). The adaptive coefficient may be used to more easily adjust the initially predetermined signal range R 1 to avoid or reduce the number of re-settings of a new signal range in temperature variations and / or changes in the environment. To this end, some experiments or simulations may be performed in advance to determine how temperature variations and / or changes in the environment affect the signal range. For the initially predetermined signal range, the adjustment coefficient R1 is set to one.Moreover, there is another predetermined signal range R1' including an upper limit and a lower limit in FIG. 2A. The upper limit and the lower limit of the predetermined signal range R1' are determined by multiplying an adaptive coefficient by the upper limit and the lower limit of the initial predetermined signal range R1. In the case where the initial predetermined signal range R 1 is set to 25° C., the adjustment coefficient may be set to 1.2, for example, to transfer the initial predetermined signal range R 1 into the predetermined signal range R 1' suitable for 125° C.In FIG. 2B, an initial predetermined signal range R 2 is illustrated, which includes an upper limit and a lower limit. The upper limit is defined by multiplying an adaptive coefficient and an upper limit data set by maximum absolute values of a plurality of air standard difference data sets at each frequency of a bandwidth, while the lower limit is defined by multiplying the adaptive coefficient and a lower limit data set by negative maximum absolute values of the plurality of air standard difference data sets at each frequency of the bandwidth. In this case, the plurality of air standard difference data sets correspond to a substantially identical temperature. More specifically, each of the plurality of air standard difference datasets may be generated based on a difference between two air standard raw datasets obtained by sequentially measuring the air standard at the auxiliary location AS or the wafer location WS twice by the probe assembly 10 at a natural temperature (e.g., 25° C.). In other words, the air standard difference data sets are generated by applying a difference calculation to every two adjacent data sets of the air standard raw data sets used to set the initial predetermined signal range R 2. The maximum absolute value is the maximum value of the absolute values of all differentials calculated for each frequency, while the negative maximum absolute value is a negative value of the corresponding maximum absolute value. Since the adaptive coefficient for the initial predetermined signal range R2 is set to one, the upper limit and the lower limit of the initial predetermined signal range R2 are actually defined by the upper limit data set and the lower limit data set, respectively.In addition, there is another predetermined signal range R2' including an upper limit and a lower limit in FIG. 2B. Similarly to FIG. 2A, the upper limit and the lower limit of the predetermined signal range R2' can be determined by multiplying an adaptive coefficient and the upper limit and the lower limit of the initial predetermined signal range R2 as temperature change and / or changes in environment.In FIG. 2C, an initial predetermined signal range R 3 is illustrated, which includes an upper limit and a lower limit. The upper limit is defined by multiplying an adaptive coefficient and an upper limit data set by maximum values of a plurality of air standard raw data sets at each frequency of a bandwidth, while the lower limit is defined by multiplying the adaptive coefficient and a lower limit data set by minimum values of the plurality of air standard raw data sets at each frequency of the bandwidth. The plurality of air-standard raw data sets includes a wafer-site air-standard raw data set corresponding to a first temperature and a plurality of auxiliary-site air-standard raw data sets each corresponding to a plurality of different second temperatures. For example, the raw wafer location air standard data set is created by measuring an air standard at the wafer location WS at 125° C., while the raw auxiliary location air standard data sets are created by sequentially measuring an air standard at the auxiliary location AS at 100° C., 91° C., 72° C., 50° C., etc.Moreover, there is another predetermined signal range R3' including an upper limit and a lower limit in FIG. 2C. Similarly to FIG. 2A, the upper limit and the lower limit of the predetermined signal range R3' may be determined by multiplying an adaptive coefficient and the upper limit and the lower limit of the initial predetermined signal range R3 as temperature change and / or changes in the environment.In FIG. 2D, an initial predetermined signal range R 4 is illustrated, which includes an upper limit and a lower limit. The upper limit is defined by multiplying an adaptive coefficient and an upper limit data set by maximum absolute values of a plurality of air standard difference data sets at each frequency of a bandwidth, while the lower limit is defined by multiplying the adaptive coefficient and a lower limit data set by negative maximum absolute values of the plurality of air standard difference data sets at each frequency of the bandwidth. Here, each of the plurality of air-standard difference data sets is generated based on a difference between a wafer-location air-standard raw data set corresponding to a first temperature and an auxiliary-location air-standard raw data set corresponding to a second temperature. For example, the raw wafer location air standard data set is created by measuring an air standard at the wafer location WS at 125° C., while the raw auxiliary location air standard data sets are created by sequentially measuring an air standard at the auxiliary location AS at 100° C., 91° C., 72° C., 50° C., etc.In addition, there is another predetermined signal range R4' including an upper limit and a lower limit in FIG. 2D. Similarly to FIG. 2A, the upper limit and the lower limit of the predetermined signal range R4' may be determined as temperature change and / or changes in the environment by multiplying an adaptive coefficient and the upper limit and the lower limit of the initial predetermined signal range R4.In the second embodiment of the wafer probe station 1, the wafer probe station 1 can determine, on the basis of a predefined signal range, whether an adjustment of the current temperature of the probe assembly 10 at the wafer location WS is required. The wafer probe station 1 can determine whether an adjustment of the current temperature of the probe arrangement 10 at the wafer location WS is required, although the wafer probe station 1 has determined that the current temperature of the probe arrangement 10 is stable for calibration at the auxiliary location AS. However, the process of determining whether to adjust the current temperature of the probe assembly 10 is preferably performed in the case where the probe assembly 10 is determined to be stable. In other words, the second embodiment of the wafer probe station 1 can follow the first embodiment of the wafer probe station 1.More specifically, in the second embodiment, the probe assembly 10 may be configured to measure an air standard at the auxiliary location AS to provide the air standard data set each time prior to measurement of a calibration standard CS. Measuring the air standard means that the probe assembly 10 performs measurement in the air at the auxiliary location AS, while measuring the calibration standard CS means that the probe assembly 10 performs measurement on a calibration substrate at the auxiliary location AS. For example, if the computer 20 has determined that the probe assembly 10 is stable, the probe assembly 10 may measure an air standard at the auxiliary location AS prior to measuring a calibration standard CS (e.g., a measurement on the first calibration standard CS 1 for the SHORT-CIRCUIT test circuit). As another example, if the probe assembly 10 has measured a calibration standard CS (e.g., a measurement at the first calibration standard CS 1 for the SHORT test circuit) at the auxiliary location AS and the computer 20 has determined that the temperature of the probe assembly 10 is still acceptable for the measurement of the next calibration standard CS, the probe assembly 10 may measure the next calibration standard CS (e.g., a measurement at the second calibration standard CS 2 for the OPEN test circuit).In addition, the computer 20 may be configured to compare the air standard data set to a predetermined signal range to determine whether adjustment of the temperature of the probe assembly at the wafer location WS is required. When the air standard data set falls within the predetermined signal range, the computer 20 determines that the temperature of the probe assembly is acceptable for measurement of the calibration standard CS at the auxiliary location AS. Otherwise, the computer 20 determines that the temperature of the probe assembly at the wafer location WS needs to be adjusted. The chuck mover 34 may be configured to move the wafer location chuck 32 to the probe assembly 10 when the computer 20 determines that adjustment of the temperature of the probe assembly 10 at the wafer location WS is required. Each time the probe assembly 10 completes a measurement of a calibration standard CS at the auxiliary location AS, the computer 20 may also be configured to record calibration data.FIGS. 3A and 3B illustrate various predetermined signal ranges for the second embodiment of the wafer probe station 1 in various situations. The contents shown in FIGS. 3A and 3B are for illustrative purposes only and are not to be understood as limitations of the claimed invention. To clarify FIGS. 3A and 3B, the predetermined signal ranges shown therein are all illustrated in a rectilinear form instead of the actual waveforms with variations.Referring to FIG. 3A, there is an initial predetermined signal range R 5 including an upper limit and a lower limit. The upper limit is defined by multiplying an adaptive coefficient and an upper limit data set by maximum values of a plurality of air standard raw data sets at each frequency of a bandwidth, while the lower limit is defined by multiplying the adaptive coefficient and a lower limit data set by minimum values of the plurality of air standard raw data sets at each frequency of the bandwidth. The plurality of raw air-standard data sets includes a wafer-site air-standard raw data set corresponding to a first temperature and a plurality of auxiliary-site raw air-standard data sets each corresponding to a plurality of different second temperatures. For example, the raw wafer location air standard data set is created by measuring an air standard at the wafer location WS at 125° C., while the raw auxiliary location air standard data sets are created by sequentially measuring an air standard at the auxiliary location AS at 100° C., 91° C., 72° C., 50° C., etc. The adaptive coefficient may be used to more easily adjust the initially predetermined signal range R 5 to avoid or reduce the number of repetitions of a new signal range during temperature variations and / or ambient variations. To this end, some experiments or simulations may be performed in advance to determine how temperature variations and / or changes in the environment affect a signal range. For the initially predetermined signal range R5, the adjustment coefficient is set to one.Moreover, there is another predetermined signal range R5' including an upper limit and a lower limit in FIG. 3A. The upper limit and the lower limit of the predetermined signal range R5' are determined by multiplying an adaptive coefficient by the upper limit and the lower limit of the original predetermined signal range R5.In FIG. 3B, an initial predetermined signal range R 6 is seen, which includes an upper limit and a lower limit. The upper limit is defined by multiplying an adaptive coefficient and an upper limit data set by maximum absolute values of a plurality of air standard difference data sets at each frequency of a bandwidth, while the lower limit is defined by multiplying the adaptive coefficient and a lower limit data set by negative maximum absolute values of the plurality of air standard difference data sets at each frequency of the bandwidth. Each of the plurality of air-standard difference data sets may be generated based on a difference between a wafer-location air-standard raw data set corresponding to a first temperature and an auxiliary-location air-standard raw data set corresponding to a second temperature. The positive value means that the difference in the difference calculation is positive, while the negative value means that the difference in the difference calculation is negative. Since the adaptive coefficient for the initial predetermined signal range R6 is set to one, the upper limit and the lower limit of the initial predetermined signal range R6 are actually defined by the upper limit data set and the lower limit data set, respectively.Moreover, there is another predetermined signal range R6' including an upper limit and a lower limit in FIG. 3B. Similarly to FIG. 3A, the upper limit and the lower limit of the predetermined signal range R6' may be determined as a temperature change and / or an environmental change by multiplying an adaptive coefficient and the upper limit and the lower limit of the initial predetermined signal range R6.In the third embodiment of the wafer probe station 1, the wafer probe station 1 may rely on a predetermined time window to determine whether the current temperature of the probe assembly 10 is stable for calibration at the auxiliary location AS. The predetermined time window includes an opening time and a closing time defined based on a predetermined signal range. In particular, the computer 20 may be configured to verify the air default data set with a predetermined signal range and to determine the opening time and the closing time based on the various results of the verification. Preferably, the opening time may refer to a time at which the temperature of the probe assembly 10 has stabilized for measurement of a calibration standard CS at the auxiliary location AS, and the closing time may refer to a time at which adjustment of the temperature of the probe assembly 10 at the wafer location WS is required. Here, the predetermined signal range may be one of the predetermined signal ranges shown in Figs. 2A-2D, i.e., each of the predetermined signal ranges R1-R4 and R1'-R4'.More specifically, in the third embodiment, the computer 20 may be configured to estimate a measurement time range for the probe assembly 10 to measure a calibration standard CS or to sequentially measure a plurality of calibration standards CS (e.g., the first calibration standard CS 1 for the short-circuit test circuit and the second calibration standard CS 2 for the open test circuit) at the auxiliary site AS, and verify the measurement time range with the predetermined time window to determine whether a temperature of the probe assembly 10 is stable for calibration at the auxiliary site AS. When the estimated measurement time range falls within the predetermined time window, the computer 20 determines that the temperature of the probe assembly 10 is stable for calibration at the auxiliary location AS. Otherwise, the computer 20 determines that the temperature of the probe assembly 10 is not stable enough for calibration at the auxiliary site AS. The computer 20 may also be configured to store or record calibration data obtained by measuring the calibration standard CS at the auxiliary location AS by the probe assembly 10 in the case where the computer 20 determines that the temperature of the probe assembly 10 is stable for calibration at the auxiliary location AS.FIG. 4 illustrates how a measurement time range with a predetermined time window can be checked according to the third embodiment of the wafer probe station 1. The contents shown in Figure 4 are for illustrative purposes only and should not be taken as limiting the claimed invention.Before the probe assembly 10 can be calibrated at the auxiliary location AS, a travel time MT is first required for the chuck mover 30 to move the auxiliary location chuck 34 to the probe assembly 10 (see FIG. 4 ). A preparation time PT for adjustment of the probe assembly 10 and a calibration substrate for calibration is then required, including, but not limited to, the time for alignment of the probe to the pad (PTPA) and the configuration time of the computer 20. Second to 5th second), and the subsequent preparation time PT may be three (3) seconds (i.e., from 5th second to 8th second).For better understanding, it is assumed that the measurement time range required for the probe assembly 10 to measure one or more calibration standards CS at the auxiliary location AS is 10 seconds. The first situation shows that the estimated measurement time range TR1, which begins at the second 8 and ends at the second 18, overlaps with the predetermined time window TW, which begins at the second 10 and ends at the second 40. In other words, the estimated measurement time range TR 1 does not completely fall within the predetermined time window TW; therefore, the computer 20 can determine that the temperature of the probe assembly 10 is not stable enough for calibration at the auxiliary site AS in the 8thsecond. Two seconds later, however, the second situation shows that the estimated measurement time range TR 2 starting at the 10thsecond and ending at the 20thsecond falls within the predetermined time window TW starting at the 10thsecond and ending at the 40thsecond; therefore, the computer 20 can determine that the temperature of the probe assembly 10 in the 10thsecond is stable enough for calibration at the auxiliary site AS. Then, the probe assembly 10 begins measuring the specified calibration standard / s CS at the auxiliary location AS to generate calibration data, and the computer 20 may store or record the calibration data.In the fourth embodiment of the wafer probe station 1, the wafer probe station 1 can determine, on the basis of a predetermined time window, whether an adaptation of the current temperature of the probe assembly 10 at the wafer location WS is required. The method for determining whether the current temperature of the probe assembly 10 needs to be adjusted is preferably performed when the probe assembly 10 has been classified as stable. In other words, the fourth embodiment of the wafer probe station 1 may follow the first embodiment or the third embodiment of the wafer probe station 1.As in the third embodiment, the predetermined time window of the fourth embodiment includes an opening time and a closing time defined based on a predetermined signal range. Preferably, the opening time may refer to a time at which the temperature of the probe assembly 10 has stabilized for measurement of a calibration standard CS at the auxiliary location AS, and the closing time may refer to a time at which adjustment of the temperature of the probe assembly 10 at the wafer location WS is required. Here, the predetermined signal range may be any of the predetermined signal ranges shown in Figs. 3A-3B, i.e., any of the predetermined signal ranges R5, R5', R6 and R6'. The predetermined time window of the fourth embodiment may be the same as or different from that of the third embodiment.More specifically, in the fourth embodiment, the computer 20 may be configured to estimate a measurement time range for the probe assembly 10 to measure a calibration standard CS or to measure a plurality of calibration standards CS (e.g., the first calibration standard CS 1 for the SHORT-CIRCUIT test circuit and the second calibration standard CS 2 for the OPEN test circuit) at the auxiliary site AS each time before the probe assembly 10 measures the calibration standard(s), and check the measurement time range with the predetermined time window to determine whether adjustment of a temperature of the probe assembly 10 at the wafer site WS is required. When the estimated measurement time range falls within the predetermined time window, the computer 20 determines that the current temperature of the probe assembly 10 is acceptable for the measurement of the calibration standard / s CS during the estimated measurement time range and begins to measure the specified calibration standard(s) CS at the auxiliary location AS to generate calibration data, and the computer 20 may store or record the calibration data. The computer 20 may store or record the calibration data. Otherwise, the computer 20 determines that adjustment of the current temperature of the probe assembly 10 at the wafer location WS is required, and the chuck mover 30 moves the wafer location chuck 32 to the probe assembly 10 to heat or cool the probe assembly 10.FIG. 5 illustrates how a measurement time range with a predetermined time window can be checked according to the fourth embodiment of the wafer probe station 1. The contents shown in Figure 5 are for illustrative purposes only and should not be taken as limiting the claimed invention.Referring to FIG. 5, for better understanding, it is assumed that the predetermined time window TW is set to 30 seconds starting at the 10th second and ending at the 40th second. The first situation shows that the estimated measurement time range TR 2, beginning at the 10th second and ending at the 20th second, falls within the predetermined time window TW; therefore, the computer 20 can determine that the temperature of the probe assembly 10 is acceptable for the measurement of the specified calibration standard / s CS at the auxiliary location AS during the estimated measurement time range TR 2. Then, the probe assembly 10 begins measuring the specified calibration standard / s CS at the auxiliary location AS to generate calibration data, and the computer 20 may store or record the calibration data. Next, the second situation shows that the estimated measurement time range TR 3 beginning at the second 20 and ending at the second 35 still falls within the predetermined time window TW; therefore, the computer 20 may determine that the remaining temperature of the probe assembly 10 is still acceptable for the measurement of the specified calibration standard / s CS at the auxiliary location AS during the estimated measurement time range TR 3. Then, the probe assembly 10 begins measuring the specified calibration standard / s CS at the auxiliary location AS to generate calibration data, and the computer 20 may store or record the calibration data. However, the third situation shows that the estimated measurement time range TR 4, which starts at the 35thsecond and ends at the 45thsecond, overlaps with the predetermined time window TW. In other words, the estimated measurement time range TR 4 does not completely fall within the predetermined time window TW; therefore, the computer 20 determines that adjustment of the current temperature of the probe assembly 10 at the wafer site WS is required, and the chuck moving device 30 moves the wafer site chuck 32 to the probe assembly 10 to heat or cool the probe assembly 10.In the fifth embodiment of the wafer probe station 1, the wafer probe station 1 may rely on a predetermined signal range to determine whether the current temperature of the probe assembly 10 is ready for testing the semiconductor device 40. More specifically, the probe assembly 10 may be configured to measure an air standard at the wafer location WS to provide the air standard data set, and the computer 20 may be configured to verify the air standard data set with the predetermined signal range to determine whether the current temperature of the probe assembly 10 is ready to test the semiconductor device 40 at the wafer location WS. Here, the predetermined signal range may be any of the predetermined signal ranges as shown in Figs. 2A-2B, i.e., any of the predetermined signal ranges R1-R2 and R1'-R2'.In the sixth embodiment of wafer probe station 1, wafer probe station 1 may rely on a predetermined time window to determine whether the current temperature of probe assembly 10 is ready for testing semiconductor device 40 at wafer location WS. In particular, as the chuck mover 30 moves the wafer site chuck 32 toward the probe assembly 10, the temperature of the probe assembly 10 begins to be adjusted at the wafer site WS until the temperature of the probe assembly 10 is ready for testing the semiconductor device 40 at the wafer site WS. In addition, the predetermined time window includes an opening time and a closing time defined based on a predetermined signal range. Here, the predetermined signal range may be any of the predetermined signal ranges shown in Figs. 2A-2B, i.e., any of the predetermined signal ranges R1-R2 and R1'-R2'. Preferably, the opening time may refer to a time at which the temperature of the probe assembly 10 starts to be adjusted, while the closing time may refer to a time at which the temperature of the probe assembly is ready for testing the semiconductor device at the wafer site WS. In other words, when a time range for setting the temperature of the probe assembly 10 at the wafer location WS corresponds to the predetermined time window, the current temperature of the probe assembly 10 is ready for the semiconductor device 40 at the wafer location WS to be tested.The wafer probe station 1 can use different evaluation models for calibration of the probe assembly 10, and thus the present disclosure also provides different methods for creating an evaluation model for calibration of the probe assembly 10.FIGS. 6, 7, 8 and 9 illustrate various methods for creating an evaluation model for calibration of the probe assembly 10.As shown in FIG. 6, a method 6 of creating an evaluation model (i.e., a trace noise model) for calibrating a probe assembly is disclosed. The method 6 may include the steps of: sequentially measuring, by a probe array, an air standard at a wafer location or at an auxiliary location to generate a plurality of air standard raw datasets corresponding to a substantially same temperature (marked as "61"); determining, by a computer, a signal range including an upper limit and a lower limit based on the plurality of air standard raw datasets (marked as "63"); and generating, by the computer, the evaluation model based on the signal range (marked as "65").In some embodiments of method 6, the upper limit may be defined by multiplying an adaptive coefficient and an upper limit dataset by maximum values of the plurality of air standard raw datasets at each frequency of a bandwidth, and the lower limit may be defined by multiplying the adaptive coefficient and a lower limit dataset by minimum values of the plurality of air standard raw datasets at each frequency of the bandwidth. Here, the signal range may correspond to the predetermined signal range R 1 illustrated in FIG. 2A, for example.In some other embodiments of method 6, the upper limit may be defined by multiplying an adaptive coefficient and an upper limit dataset by maximum values of the plurality of air standard raw datasets at each frequency of a bandwidth, and the lower limit may be defined by multiplying the adaptive coefficient and a lower limit dataset by minimum values of the plurality of air standard raw datasets at each frequency of the bandwidth. Here, the signal range may correspond to the predetermined signal range R 2 shown in FIG. 2B, for example.As shown in FIG. 7, a method 7 for creating an evaluation model (i.e., a temperature drift model) for calibrating a probe assembly is disclosed. The method 7 may include the steps of: measuring, by the probe assembly, an air standard at a wafer location to produce a raw wafer location air standard data set corresponding to a first temperature (labeled as "71"); sequentially measuring, by the probe assembly, an air standard at an auxiliary location to produce a plurality of raw auxiliary location air standard data sets each corresponding to a plurality of different second temperatures (labeled as "73"); determining, by a computer, a signal range including an upper limit and a lower limit based on a plurality of raw air standard data sets comprising the raw wafer location air standard data set and the plurality of raw auxiliary location air standard data sets (labeled as "75"); and creating the evaluation model by the computer based on the signal range (marked as "77").In some embodiments of method 7, the upper limit is defined by multiplying an adaptive coefficient and an upper limit dataset by maximum values of the plurality of air standard raw datasets at each frequency of a bandwidth, and the lower limit is defined by multiplying the adaptive coefficient and a lower limit dataset by minimum values of the plurality of air standard raw datasets at each frequency of the bandwidth. Here, the signal range may correspond to, for example, the predetermined signal range R 3 shown in FIG. 2C or the predetermined signal range R 5 shown in FIG. 3A.In some embodiments of method 7, the upper limit may be defined by multiplying an adaptive coefficient and an upper limit data set by maximum absolute values of a plurality of air standard difference data sets at each frequency of a bandwidth, and the lower limit may be defined by multiplying the adaptive coefficient and a lower limit data set by negative maximum absolute values of the plurality of air standard difference data sets at each frequency of the bandwidth. Moreover, each of the plurality of air-standard difference datasets is generated based on a difference between the wafer-location air-standard raw dataset and one of the plurality of auxiliary-location air-standard raw datasets. Here, the signal range may correspond to, for example, the predetermined signal range R 4 illustrated in FIG. 2D or the predetermined signal range R 6 illustrated in FIG. 3B.As shown in FIG. 8, a method 8 for creating an evaluation model (i.e., a time window based on a trace noise model) for calibrating a probe assembly is disclosed. The method 8 may include the steps of: sequentially measuring, by the probe assembly, an air standard at a wafer location or at an auxiliary location to produce a plurality of air standard raw datasets corresponding to a substantially same temperature (marked as "81"); determining, by a computer, a signal range including an upper limit and a lower limit based on the plurality of air standard raw datasets (marked as "83"); determining, by the computer, a time window including an open time and a close time based on the signal range (marked as "85"); and producing, by the computer, the evaluation model based on the time window (marked as "87").In some embodiments of method 8, the upper limit may be defined by multiplying an adaptive coefficient and an upper limit dataset by maximum values of the plurality of air standard raw datasets at each frequency of a bandwidth, and the lower limit may be defined by multiplying the adaptive coefficient and a lower limit dataset by minimum values of the plurality of air standard raw datasets at each frequency of the bandwidth. Here, the time window may correspond to the predetermined time window TW shown in FIG. 4, for example, which may be determined on the basis of the predetermined signal range R1 or R1' shown in FIG. 2A.In some embodiments of method 8, the upper limit may be defined by multiplying an adaptive coefficient and an upper limit data set by maximum absolute values of a plurality of air standard difference data sets at each frequency of a bandwidth, and the lower limit may be defined by multiplying the adaptive coefficient and a lower limit data set by negative maximum absolute values of the plurality of air standard difference data sets at each frequency of the bandwidth. Moreover, each of the plurality of air norm difference datasets is generated based on a difference between two adjacent datasets of the plurality of air norm raw datasets. Here, the time window may correspond to, for example, the predetermined time window TW shown in FIG. 4, which may be determined based on the predetermined signal range R2 or R2' shown in FIG. 2B.As shown in FIG. 9, a method 9 for creating an evaluation model (i.e. a time window based on a temperature drift model) for the calibration of a probe arrangement is disclosed. The method 9 may include the steps of: measuring, by the probe assembly, an air standard at a wafer location to produce a wafer location air standard raw dataset corresponding to a first temperature (labeled "91"); sequentially measuring, by the probe assembly, an air standard at an auxiliary location to produce a plurality of auxiliary location air standard raw datasets each corresponding to a plurality of different second temperatures (labeled "93"); determining, by a computer, a signal range including an upper limit and a lower limit based on a plurality of air standard raw datasets including the wafer location air standard raw dataset and the plurality of auxiliary location air standard raw datasets (labeled "95"); determining, by the computer, a time window comprising an opening time and a closing time based on the signal range (marked as "97"); and creating, by the computer, the evaluation model based on the time window (marked as "99").In some embodiments of method 9, the upper limit may be defined by multiplying an adaptive coefficient and an upper limit dataset by maximum values of the plurality of air standard raw datasets at each frequency of a bandwidth, and the lower limit may be defined by multiplying the adaptive coefficient and a lower limit dataset by minimum values of the plurality of air standard raw datasets at each frequency of the bandwidth. Here, the time window may correspond to, for example, the predetermined time window TW shown in FIG. 5, which may be determined based on the predetermined signal range R3 or R3' shown in FIG. 2C or the predetermined signal range R5 or R5' shown in FIG. 3A.In some embodiments of method 9, the upper limit may be defined by multiplying an adaptive coefficient and an upper limit data set by maximum absolute values of a plurality of air standard difference data sets at each frequency of a bandwidth, and the lower limit may be defined by multiplying the adaptive coefficient and a lower limit data set by negative maximum absolute values of the plurality of air standard difference data sets at each frequency of the bandwidth. Moreover, each of the plurality of air-standard difference datasets is generated based on a difference between the wafer-location air-standard raw dataset and one of the plurality of auxiliary-location air-standard raw datasets. Here, the time window may correspond to, for example, the predetermined time window TW shown in FIG. 5, which may be determined based on the predetermined signal range R4 or R4' shown in FIG. 2D or the predetermined signal range R6 or R6' shown in FIG. 3B.Each of the methods 6- 9 substantially corresponds to at least one particular embodiment of the wafer probe station 1. therefore, persons having ordinary skill in the art can fully understand and implement the methods 6- 9 by simply referring to the descriptions of the embodiments of the wafer probe station 1, although not all embodiments of the methods 6- 9 are described above in detail.FIGS. 10A and 10B together show a general operation flow WF of the wafer probe station 1 according to some embodiments of the present disclosure. The contents of Figure 10 are for example only and are not to be understood as limiting the claimed invention.The workflow WF begins with step 101 after the chuck mover 30 has moved the auxiliary location chuck 34 to the probe assembly 10 for a calibration task. In step 101, the wafer probe station 1 determines whether a temperature of the probe assembly 10 is stable for the calibration task at the auxiliary location AS. When the determination result of step 101 is negative, the wafer probe station 1 waits for the next determination; however, when the determination result of step 101 is positive, the operation flow WF proceeds to step 103. In step 103, the wafer probe station 1 performs the calibration task at the auxiliary site AS. The details of step 101 and steps 103 may relate to the first or third embodiment of the wafer probe station 1, as mentioned above.When the operation flow WF goes to step 105, the wafer probe station 1 determines whether the calibration task is completed at the auxiliary location AS. If the result of the determination in step 105 is negative, the operation flow WF goes to step 107, but if the result of the determination in step 105 is positive, the operation flow WF goes to step 113.In step 107, the wafer probe station 1 determines whether to adjust the temperature of the probe assembly 10. When the determination result of step 107 is negative, the wafer probe station 1 proceeds with the calibration task at the auxiliary site AS; however, when the determination result of step 107 is positive, the operation flow WF proceeds to step 109. In step 109, the chuck moving device 30 of the wafer probe station 1 moves the wafer site chuck 32 to the probe assembly 10 and begins to adjust the temperature of the probe assembly 10 at the wafer site WS. The details of step 107 and step 109 may relate to the second embodiment or the fourth embodiment of the wafer probe station 1, as mentioned above.The operation flow WF proceeds to step 111 when the temperature of the probe assembly 10 has been set to a predetermined degree. In step 111, the chuck moving device 30 moves the auxiliary site chuck 34 to the probe assembly 10 to further perform the calibration task.As mentioned above, operation WF proceeds to step 113 when the wafer probe station 1 determines that the calibration task is completed at the auxiliary location AS. In step 113, the chuck moving device 30 moves the wafer location chuck 32 to the probe assembly 10, and then the operation flow WF proceeds to step 115. In step 115, the wafer probe station 1 controls the temperature of the probe assembly 10 at the wafer location WS.While adjusting the temperature of the probe assembly 10 at the wafer location WS, the wafer probe station 1 also determines whether the current temperature of the probe assembly 10 is ready for testing the semiconductor device 40 at the wafer location WS in step 117. When the determination result of step 117 is negative, the wafer probe station 1 proceeds to adjust the temperature of the probe assembly 10; however, when the determination result of step 117 is positive, the operation flow WF proceeds to step 119. In step 119, the wafer probe station 1 tests the semiconductor device 40 at the wafer location WS. The details of steps 115, 117 and 119 may relate to the fifth or sixth embodiment of the wafer probe station 1, as mentioned above.The operation flow WF proceeds to step 121 when the test of the semiconductor device 40 is completed. In step 121, the wafer probe station 1 may automatically determine whether the test result of the semiconductor device 40 meets a requirement according to a standard method. Alternatively, the user may determine by himself whether the test result of the semiconductor device 40 satisfies a requirement. When the determination result of step 121 is negative, the wafer probe station 1 prepares another calibration task for the probe assembly 10, and the operation flow WF proceeds to step 111. More specifically, the probe assembly 10 may set the temperature of the probe assembly 10 to a predetermined amount and move the auxiliary location chuck 34 to the probe assembly 10 for the imminent calibration task. On the other hand, if the result of the determination in step 121 is affirmative, the processing WF is ended. Then, the wafer probe station 1 can start another operation for other calibration or inspection processes.Without being in contradiction to the claimed invention, a plurality of combinations, modifications and / or substitutions of the directly or indirectly disclosed embodiments are included substantially in the entire disclosure, even if they are not particularly mentioned above. The scope of the claimed invention is defined by the following appended claims.To determine whether the current temperature of a probe assembly is stable for calibration at the auxiliary site, a wafer probe station verifies a measured air standard data set with a predetermined signal range or verifies an estimated measurement time range with a predetermined time window. To determine whether an adjustment of the current temperature of a probe assembly at the wafer location is required, a wafer probe station verifies a measured air standard data set with a predetermined signal range or an estimated measurement time range with a predetermined time window. In order to determine whether the current temperature of a probe arrangement is ready for testing a semiconductor component, a wafer probe station checks a measured air standard data set with a predefined signal range.

Claims

A wafer probe station comprising: a wafer site for testing a semiconductor device; an auxiliary calibration site separate from the wafer site; a probe assembly configured to measure an air standard at the auxiliary site to provide an air standard data set; and a computer electrically connected to the probe assembly and configured to verify the air standard data set to a predetermined signal range to determine whether a temperature of the probe assembly is stable for calibration at the auxiliary site; wherein the probe assembly is further configured to measure a calibration standard at the auxiliary site when the computer determines that the temperature of the probe assembly is stable for calibration at the auxiliary site.The wafer probe station of claim 1, wherein: the predetermined signal range comprises an upper limit and a lower limit; the upper limit is defined by multiplying an adaptive coefficient and an upper limit dataset by maximum values of a plurality of air standard raw datasets at each frequency of a bandwidth, the plurality of air standard raw datasets corresponding to a substantially same temperature; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit dataset by minimum values of the plurality of air standard raw datasets at each frequency of the bandwidth.The wafer probe station of claim 1, wherein: the predetermined signal range comprises an upper limit and a lower limit; the upper limit is defined by multiplying an adaptive coefficient and an upper limit data set by maximum absolute values of a plurality of air standard difference data sets at each frequency of a bandwidth, each of the plurality of air standard difference data sets being generated based on a difference between two air standard raw data sets obtained by sequentially measuring the air standard twice at the auxiliary site or at the wafer site, and the plurality of air standard difference data sets corresponding to a substantially same temperature; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit data set by negative maximum absolute values of the plurality of air standard difference data sets at each frequency of the bandwidth.The wafer probe station of claim 1, wherein: the predetermined signal range comprises an upper limit and a lower limit; the upper limit is defined by multiplying an adaptive coefficient and an upper limit dataset by maximum values of a plurality of air standard raw datasets at each frequency of a bandwidth, the plurality of air standard raw datasets comprising a wafer location air standard raw dataset corresponding to a first temperature and a plurality of auxiliary location air standard raw datasets each corresponding to a plurality of different second temperatures; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit dataset by minimum values of the plurality of air standard raw datasets at each frequency of the bandwidth.The wafer probe station of claim 1, wherein: the predetermined signal range comprises an upper limit and a lower limit; the upper limit is defined by multiplying an adaptive coefficient and an upper limit data set by maximum absolute values of a plurality of air standard difference data sets at each frequency of a bandwidth, each of the plurality of air standard difference data sets being generated based on a difference between a wafer location air standard raw data set corresponding to a first temperature and an auxiliary location air standard raw data set corresponding to a second temperature; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit data set by negative maximum absolute values of the plurality of air standard difference data sets at each frequency of the bandwidth.A wafer probe station comprising: a wafer site for testing a semiconductor device; an auxiliary calibration site separate from the wafer site; a probe assembly configured to measure an air standard at the auxiliary site to provide an air standard data set prior to measuring a calibration standard; a computer electrically connected to the probe assembly and configured to verify the air standard data set with a predetermined signal range to determine whether an adjustment of the temperature of the probe assembly at the wafer site is required; and a chuck moving device configured to move a wafer site chuck to the probe assembly when the computer determines that adjustment of the temperature of the probe assembly at the wafer site is required.The wafer probe station of claim 6, wherein: the predetermined signal range comprises an upper limit and a lower limit; the upper limit is defined by multiplying an adaptive coefficient and an upper limit dataset by maximum values of a plurality of air standard raw datasets at each frequency of a bandwidth, the plurality of air standard raw datasets comprising a wafer location air standard raw dataset corresponding to a first temperature and a plurality of auxiliary location air standard raw datasets each corresponding to a plurality of different second temperatures; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit dataset by minimum values of the plurality of air standard raw datasets at each frequency of the bandwidth.The wafer probe station of claim 6, wherein: the predetermined signal range comprises an upper limit and a lower limit; the upper limit is defined by multiplying an adaptive coefficient and an upper limit data set by maximum absolute values of a plurality of air standard difference data sets at each frequency of a bandwidth, each of the plurality of air standard difference data sets being generated based on a difference between a wafer location air standard raw data set corresponding to a first temperature and an auxiliary location air standard raw data set corresponding to a second temperature; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit data set by negative maximum absolute values of the plurality of air standard difference data sets at each frequency of the bandwidth.A wafer probe station comprising: a probe assembly configured to test a semiconductor device at a wafer location and calibrate it at an auxiliary location remote from the wafer location; and a computer electrically connected to the probe assembly and configured to: estimate a measurement time range for the probe assembly to measure a calibration standard at the auxiliary location; and check the measurement time range with a predetermined time window to determine whether the temperature of the probe assembly is stable for calibration at the auxiliary location; wherein the computer is further configured to record calibration data obtained by measuring the calibration standard at the auxiliary location by the probe assembly in a case where the computer determines that the temperature of the probe assembly is stable for calibration at the auxiliary location; and wherein the predetermined time window comprises an opening time and a closing time defined based on a predetermined signal range.The wafer probe station of claim 9, wherein: the predetermined signal range comprises an upper limit and a lower limit; the upper limit is defined by multiplying an adaptive coefficient and an upper limit dataset by maximum values of a plurality of air standard raw datasets at each frequency of a bandwidth, the plurality of air standard raw datasets corresponding to a substantially same temperature; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit dataset by minimum values of the plurality of air standard raw datasets at each frequency of the bandwidth.The wafer probe station of claim 9, wherein: the predetermined signal range comprises an upper limit and a lower limit; the upper limit is defined by multiplying an adaptive coefficient and an upper limit data set by maximum absolute values of a plurality of air standard difference data sets at each frequency of a bandwidth, each of the plurality of air standard difference data sets being generated based on a difference between two air standard raw data sets obtained by sequentially measuring the air standard twice at the auxiliary site or at the wafer site, and the plurality of air standard difference data sets corresponding to a substantially same temperature; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit data set by negative maximum absolute values of the plurality of air standard difference data sets at each frequency of the bandwidth.The wafer probe station of claim 9, wherein: the predetermined signal range comprises an upper limit and a lower limit; the upper limit is defined by multiplying an adaptive coefficient and an upper limit dataset by maximum values of a plurality of air standard raw datasets at each frequency of a bandwidth, the plurality of air standard raw datasets comprising a wafer location air standard raw dataset corresponding to a first temperature and a plurality of auxiliary location air standard raw datasets each corresponding to a plurality of different second temperatures; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit dataset by minimum values of the plurality of air standard raw datasets at each frequency of the bandwidth.The wafer probe station of claim 9, wherein: the predetermined signal range comprises an upper limit and a lower limit; the upper limit is defined by multiplying an adaptive coefficient and an upper limit data set by maximum absolute values of a plurality of air standard difference data sets at each frequency of a bandwidth, each of the plurality of air standard difference data sets being generated based on a difference between a wafer location air standard raw data set corresponding to a first temperature and an auxiliary location air standard raw data set corresponding to a second temperature; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit data set by negative maximum absolute values of the plurality of air standard difference data sets at each frequency of the bandwidth.The wafer probe station of claim 9, wherein the opening time refers to a time at which the temperature of the probe assembly has stabilized for measurement of the calibration standard at the auxiliary location, and the closing time refers to a time at which adjustment of the temperature of the probe assembly at the wafer location is required.A wafer probe station comprising: a probe assembly configured to test a semiconductor device at a wafer location and calibrate it at an auxiliary location remote from the wafer location; a computer electrically connected to the probe assembly and configured to: estimate a measurement time range for the probe assembly to measure a calibration standard at the auxiliary location before the probe assembly measures the calibration standard; and verify the measurement time range with a predetermined time window to determine whether an adjustment of the temperature of the probe assembly at the wafer location is required; and a chuck mover configured to move a wafer location chuck to the probe assembly when the computer determines that an adjustment of the temperature of the probe assembly at the wafer location is required; wherein the predetermined time window comprises an opening time and a closing time defined based on a predetermined signal range.The wafer probe station of claim 15, wherein: the predetermined signal range comprises an upper limit and a lower limit; the upper limit is defined by multiplying an adaptive coefficient and an upper limit dataset by maximum values of a plurality of air standard raw datasets at each frequency of a bandwidth, the plurality of air standard raw datasets comprising a wafer location air standard raw dataset corresponding to a first temperature and a plurality of auxiliary location air standard raw datasets each corresponding to a plurality of different second temperatures; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit dataset by minimum values of the plurality of air standard raw datasets at each frequency of the bandwidth.The wafer probe station of claim 15, wherein: the predetermined signal range comprises an upper limit and a lower limit; the upper limit is defined by multiplying an adaptive coefficient and an upper limit data set by maximum absolute values of a plurality of air standard difference data sets at each frequency of a bandwidth, each of the plurality of air standard difference data sets being generated based on a difference between a wafer location air standard raw data set corresponding to a first temperature and an auxiliary location air standard raw data set corresponding to a second temperature; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit data set by negative maximum absolute values of the plurality of air standard difference data sets at each frequency of the bandwidth.The wafer probe station of claim 15, wherein the open time refers to a time at which the temperature of the probe assembly has stabilized for measurement of the calibration standard at the auxiliary location, and the close time refers to a time at which adjustment of the temperature of the probe assembly at the wafer location is required.A wafer probe station comprising: a wafer site for testing a semiconductor device; an auxiliary calibration site separate from the wafer site; a probe assembly configured to measure an air standard at the wafer site to provide an air standard data set; and a computer electrically connected to the probe assembly and configured to verify the air standard data set with a predetermined signal range to determine whether a temperature of the probe assembly is ready for testing the semiconductor device at the wafer site.The wafer probe station of claim 19, wherein: the predetermined signal range comprises an upper limit and a lower limit; the upper limit is defined by multiplying an adaptive coefficient and an upper limit dataset by maximum values of a plurality of air standard raw datasets at each frequency of a bandwidth, the plurality of air standard raw datasets corresponding to a substantially same temperature; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit dataset by minimum values of the plurality of air standard raw datasets at each frequency of the bandwidth.The wafer probe station of claim 19, wherein: the predetermined signal range comprises an upper limit and a lower limit; the upper limit is defined by multiplying an adaptive coefficient and an upper limit data set by maximum absolute values of a plurality of air standard difference data sets at each frequency of a bandwidth, each of the plurality of air standard difference data sets being generated based on a difference between two air standard raw data sets obtained by sequentially measuring the air standard twice at the auxiliary site or at the wafer site, and the plurality of air standard difference data sets corresponding to a same temperature; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit data set by negative maximum absolute values of the plurality of air standard difference data sets at each frequency of the bandwidth.A wafer probe station comprising: a probe assembly configured to test a semiconductor device at a wafer location and calibrate it at an auxiliary location remote from the wafer location; and a computer electrically connected to the probe assembly and configured to verify a duration of adjusting a temperature of the probe assembly with a predetermined time window to determine whether the temperature of the probe assembly is ready for testing the semiconductor device at the wafer location; wherein the predetermined time window comprises an open time and a close time defined based on a predetermined signal range.The wafer probe station of claim 22, wherein: the predetermined signal range comprises an upper limit and a lower limit; the upper limit is defined by multiplying an adaptive coefficient and an upper limit dataset by maximum values of a plurality of air standard raw datasets at each frequency of a bandwidth, the plurality of air standard raw datasets corresponding to a substantially same temperature; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit dataset by minimum values of the plurality of air standard raw datasets at each frequency of the bandwidth.The wafer probe station of claim 22, wherein: the predetermined signal range comprises an upper limit and a lower limit; the upper limit is defined by multiplying an adaptive coefficient and an upper limit data set by maximum absolute values of a plurality of air standard difference data sets at each frequency of a bandwidth, each of the plurality of air standard difference data sets being generated based on a difference between two air standard raw data sets obtained by sequentially measuring the air standard twice at the auxiliary site or at the wafer site, and the plurality of air standard difference data sets corresponding to a substantially same temperature; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit data set by negative maximum absolute values of the plurality of air standard difference data sets at each frequency of the bandwidth.The wafer probe station of claim 22, wherein: the opening time point refers to a time point at which the temperature of the probe assembly begins to be adjusted, and the closing time point refers to a time point at which the temperature of the probe assembly is ready for testing the semiconductor device at the wafer location.A method of creating an evaluation model for calibration of a probe assembly, comprising: sequentially measuring, by the probe assembly, an air standard at a wafer location or at an auxiliary location to create a plurality of air standard raw datasets, wherein the plurality of air standard raw datasets correspond to a substantially same temperature; determining, by a computer, a signal range having an upper limit and a lower limit based on the plurality of air standard raw datasets; and creating, by the computer, the evaluation model based on the signal range.The method of claim 26, wherein: the upper limit is defined by multiplying an adaptive coefficient and an upper limit dataset by maximum values of the plurality of raw air standard datasets at each frequency of a bandwidth; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit dataset by minimum values of the plurality of raw air standard datasets at each frequency of the bandwidth.The method of claim 26, wherein: the upper limit is defined by multiplying an adaptive coefficient and an upper limit data set by maximum absolute values of a plurality of air standard difference data sets at each frequency of a bandwidth, each of the plurality of air standard difference data sets being generated based on a difference between two adjacent data sets of the plurality of air standard raw data sets; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit data set by negative maximum absolute values of the plurality of air standard difference data sets at each frequency of the bandwidth.A method of creating an evaluation model for calibrating a probe assembly, comprising: measuring, by the probe assembly, an air standard at a wafer location to create a wafer location air standard raw dataset, the wafer location air standard raw dataset corresponding to a first temperature; sequentially measuring, by the probe assembly, an air standard at an auxiliary location to create a plurality of auxiliary location air standard raw datasets, the plurality of auxiliary location air standard raw datasets each corresponding to a plurality of different second temperatures; determining a signal range including an upper limit and a lower limit by a computer based on a plurality of air-standard raw data sets, wherein the plurality of air-standard raw data sets comprise the wafer-location air-standard raw data set and the plurality of auxiliary-location air-standard raw data sets; and creating the evaluation model by the computer based on the signal range.The method of claim 29, wherein: the upper limit is defined by multiplying an adaptive coefficient and an upper limit dataset by maximum values of the plurality of raw air standard datasets at each frequency of a bandwidth; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit dataset by minimum values of the plurality of raw air standard datasets at each frequency of the bandwidth.The method of claim 29, wherein: the upper limit is defined by multiplying an adaptive coefficient and an upper limit data set by maximum absolute values of a plurality of air standard difference data sets at each frequency of a bandwidth, each of the plurality of air standard difference data sets being generated based on a difference between the wafer location air standard raw data set and one of the plurality of auxiliary location air standard raw data sets; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit data set by negative maximum absolute values of the plurality of air standard difference data sets at each frequency of the bandwidth.A method of creating an evaluation model for calibration of a probe assembly, comprising: sequentially measuring, by the probe assembly, an air standard at a wafer location or at a Yes auxiliary location to create a plurality of air standard raw datasets, wherein the plurality of air standard raw datasets correspond to a substantially same temperature; determining, by a computer, a signal range having an upper limit and a lower limit based on the plurality of air standard raw datasets; determining, by the computer, a time window comprising an open time and a close time based on the signal range; and creating, by the computer, the evaluation model based on the time window.The method of claim 32, wherein: the upper limit is defined by multiplying an adaptive coefficient and an upper limit dataset by maximum values of the plurality of raw air standard datasets at each frequency of a bandwidth; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit dataset by minimum values of the plurality of raw air standard datasets at each frequency of the bandwidth.The method of claim 32, wherein: the upper limit is defined by multiplying an adaptive coefficient and an upper limit data set by maximum absolute values of a plurality of air standard difference data sets at each frequency of a bandwidth, each of the plurality of air standard difference data sets being generated based on a difference between two adjacent data sets of the plurality of air standard raw data sets; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit data set by negative maximum absolute values of the plurality of air standard difference data sets at each frequency of the bandwidth.The method of claim 32, wherein the opening time refers to a time at which the temperature of the probe assembly has stabilized for measurement of a calibration standard at the auxiliary location, and the closing time refers to a time at which adjustment of the temperature of the probe assembly at the wafer location is required.A method of creating an evaluation model for calibrating a probe assembly, comprising: measuring, by the probe assembly, an air standard at a wafer location to create a wafer location air standard raw dataset, the wafer location air standard raw dataset corresponding to a first temperature; sequentially measuring, by the probe assembly, an air standard at an auxiliary location to create a plurality of auxiliary location air standard raw datasets, the plurality of auxiliary location air standard raw datasets each corresponding to a plurality of different second temperatures; determining a signal range including an upper limit and a lower limit by a computer based on a plurality of air standard raw data sets, the plurality of air standard raw data sets including the wafer location air standard raw data set and the plurality of auxiliary location air standard raw data sets; determining a time window including an opening time and a closing time by the computer based on the signal range; and creating the evaluation model by the computer based on the time window.The method of claim 36, wherein: the upper limit is defined by multiplying an adaptive coefficient and an upper limit dataset by maximum values of the plurality of raw air standard datasets at each frequency of a bandwidth; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit dataset by minimum values of the plurality of raw air standard datasets at each frequency of the bandwidth.The method of claim 36, wherein: the upper limit is defined by multiplying an adaptive coefficient and an upper limit data set by maximum absolute values of a plurality of air standard difference data sets at each frequency of a bandwidth, each of the plurality of air standard difference data sets being generated based on a difference between the wafer location air standard raw data set and one of the plurality of auxiliary location air standard raw data sets; and the lower limit is defined by multiplying the adaptive coefficient and a lower limit data set by negative maximum absolute values of the plurality of air standard difference data sets at each frequency of the bandwidth.The method of claim 36, wherein the opening time refers to a time at which the temperature of the probe assembly has stabilized for measurement of a calibration standard at the auxiliary location, and the closing time refers to a time at which adjustment of the temperature of the probe assembly at the wafer location is required.A semiconductor device under test with a wafer probe station according to any of claims 1, 6, 9, 15, 19 and 22.

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