Light-emitting device, light-emitting module, and plurality of light-emitting devices

Abstract

A light-emitting device includes first and second semiconductor laser elements, first and second protection elements, and first and second submounts. The second semiconductor laser element has a length greater than that of the first semiconductor laser element. In a plan view, the first protection element is not placed between first and second virtual straight lines that respectively pass through and are parallel to the light-emitting surface and the first lateral surface of the first semiconductor laser element, and a part or all of the second protection element is placed between third and fourth virtual straight lines that respectively pass through and are parallel to the light-emitting surface and the first lateral surface of the second semiconductor laser element. In the plan view, a center point of the light-emitting surface of each of the first and second semiconductor laser elements does not coincide with a center point of the first and second semiconductor laser elements.second submount.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a light-emitting device, a light-emitting module, and a plurality of light-emitting devices including a first light-emitting device and a second light-emitting device. BACKGROUND

[0002] Japanese Patent Publication No. 2023-164346 discloses that when the light-emitting surface of a semiconductor laser element is its front surface, the semiconductor laser element and a protective member are arranged such that the protective member is arranged further back from the rear surface of the semiconductor laser element on the mounting surface of a submount. OVERVIEW

[0003] The present disclosure discloses a light-emitting device or a light-emitting module in which submounts having the same design can be used in common for two semiconductor laser elements having mutually different lengths in a resonator direction (i.e., a direction orthogonal to the light-emitting surface of the semiconductor laser elements).

[0004] Alternatively, instead of the above aspect, the present disclosure discloses a plurality of light-emitting devices allowing the respective use of submounts having the same design for a first light-emitting device and a second light-emitting device in which semiconductor laser elements having mutually different lengths in a resonator direction are mounted.

[0005] Alternatively, instead of the above aspects, the present disclosure discloses a light-emitting device or a light-emitting module that can achieve a small-sized light-emitting device.

[0006] Alternatively, instead of the above aspects, the present disclosure discloses a light-emitting device or a light-emitting module capable of emitting light, with which an optical design is simplified.

[0007] Alternatively, instead of the above aspects, the present disclosure discloses a plurality of light-emitting devices including a first light-emitting device and a second light-emitting device, in which a deviation in the light-emitting position can be reduced when they are mounted in the same orientation and when they are mounted to face each other.

[0008] The present specification also discloses an embodiment relating to the plurality of aspects from the aspects described above in combination.

[0009] A light-emitting device disclosed in one embodiment includes a plurality of semiconductor laser elements, a plurality of protection elements, and a plurality of submounts.

[0010] The semiconductor laser elements include a first semiconductor laser element and a second semiconductor laser element, each having a light-emitting surface and a first lateral surface opposite the light-emitting surface. The second semiconductor laser element has a length greater than a length of the first semiconductor laser element in a resonator direction orthogonal to the light-emitting surface of a corresponding one of the first semiconductor laser element and the second semiconductor laser element. The protection elements include a first protection element and a second protection element. The submounts include a first submount and a second submount. The first semiconductor laser element and the first protection element are arranged on the first submount. The second semiconductor laser element and the second protection element are arranged on the second submount.Each of the first submount and the second submount includes a mounting surface on which a wiring layer is provided. The wiring layer includes a first region on which a corresponding one of the first semiconductor laser element and the second semiconductor laser element is arranged, and a second region on which a corresponding one of the first protection element and the second protection element is arranged. In a plan view, the first protection element is not placed between a first virtual straight line and a second virtual straight line. The first virtual straight line passes through the light-emitting surface of the first semiconductor laser element and is parallel thereto. The second virtual straight line passes through the first lateral surface of the first semiconductor laser element and is parallel thereto.In the plan view, part or all of the second protection member is placed between a third virtual straight line and a fourth virtual straight line. The third virtual straight line passes through and is parallel to the light-emitting surface of the second semiconductor laser element. The fourth virtual straight line passes through and is parallel to the first lateral surface of the second semiconductor laser element. In the plan view, a center of a width of the light-emitting surface of the first semiconductor laser element does not coincide with a center of a width of the first submount in a direction parallel to the light-emitting surface of the first semiconductor laser element.In the plan view, a center of a width of the light-emitting surface of the second semiconductor laser element does not coincide with a center of a width of the second submount in a direction parallel to the light-emitting surface of the second semiconductor laser element.

[0011] A light-emitting module disclosed in one embodiment includes a first light-emitting device, a second light-emitting device, and a mounting substrate. The first light-emitting device includes a plurality of first semiconductor laser elements, a plurality of first protection elements, and a plurality of first submounts. The first semiconductor laser elements each have a light-emitting surface and a first lateral surface opposite the light-emitting surface. The first submounts each include a first mounting surface on which a first wiring layer is provided. The first wiring layer includes a first region and a second region. The first region is a region on which a corresponding one of the first semiconductor laser elements is disposed, and the second region is a region on which a corresponding one of the first protection elements is disposed.The second light-emitting device includes a plurality of second semiconductor laser elements, a plurality of second protection elements, and a plurality of second submounts. The second semiconductor laser elements each have a light-emitting surface and a second lateral surface opposite the light-emitting surface. The second submounts each include a second mounting surface on which a second wiring layer is provided. The second wiring layer includes a first region and a second region. The first region is a region on which a corresponding one of the second semiconductor laser elements is arranged, and the second region is a region on which a corresponding one of the second protection elements is arranged. The first light-emitting device and the second light-emitting device are mounted on the mounting substrate.A shape of the first wiring layer of each of the first submounts, viewed from a direction orthogonal to the first mounting surface, is identical to a shape of the second wiring layer of each of the second submounts, viewed from a direction perpendicular to the second mounting surface. In a plan view, each of the first protection elements is not placed between a first virtual straight line and a second virtual straight line. The first virtual straight line passes through and is parallel to the light-emitting surface of a corresponding one of the first semiconductor laser elements, and the second virtual straight line passes through and is parallel to the first lateral surface of the corresponding one of the first semiconductor laser elements. In the plan view, part or all of each of the second protection elements is placed between a third virtual straight line and a fourth virtual straight line.The first virtual straight line passes through and is parallel to the light-emitting surface of a corresponding one of the second semiconductor laser elements, and the fourth virtual straight line passes through and is parallel to the first lateral surface of the corresponding one of the second semiconductor laser elements. In plan view, a center of a width of the light-emitting surface of each of the first semiconductor laser elements does not coincide with a center of a width of a corresponding one of the first submounts in a direction parallel to the light-emitting surface of each of the first semiconductor laser elements. In plan view, a center of a width of the light-emitting surface of each of the second semiconductor laser elements does not coincide with a center of a width of a corresponding one of the second submounts in a direction parallel to the light-emitting surface of each of the second semiconductor laser elements.

[0012] A plurality of light-emitting devices disclosed in one embodiment includes a first light-emitting device and a second light-emitting device. The first light-emitting device includes a plurality of first semiconductor laser elements, each having a light-emitting surface and a first lateral surface opposite the light-emitting surface, a plurality of first protection elements, and a plurality of first submounts, each including a first mounting surface on which a first wiring layer is provided, wherein the first wiring layer includes a first region and a second region, wherein the first region is a region on which a corresponding one of the first semiconductor laser elements is disposed, and the second region is a region on which a corresponding one of the first protection elements is disposed.The second light-emitting device includes a plurality of second semiconductor laser elements each having a light-emitting surface and a second lateral surface opposite to the light-emitting surface, a plurality of second protection elements, and a plurality of second submounts each including a second mounting surface on which a second wiring layer is provided, wherein the second wiring layer includes a first region and a second region, wherein the first region is a region on which a corresponding one of the second semiconductor laser elements is arranged, and the second region is a region on which a corresponding one of the second protection elements is arranged.A shape of the first wiring layer of each of the first submounts, viewed from a direction orthogonal to the first mounting surface, is identical to a shape of the second wiring layer of each of the second submounts, viewed from a direction orthogonal to the second mounting surface. In a plan view, each of the first protection elements is not placed between a first virtual straight line and a second virtual straight line. The first virtual straight line passes through and is parallel to the light-emitting surface of a corresponding one of the first semiconductor laser elements, and the second virtual straight line passes through and is parallel to the first lateral surface of the corresponding one of the first semiconductor laser elements. In the plan view, part or all of each of the second protection elements is placed between a third virtual straight line and a fourth straight line.The third straight line passes through and is parallel to the light-emitting surface of a corresponding one of the second semiconductor laser elements, and the fourth virtual straight line passes through and is parallel to the first lateral surface of the corresponding one of the second semiconductor laser elements. In plan view, a center of a width of the light-emitting surface of each of the first semiconductor laser elements does not coincide with a center of a width of a corresponding one of the first submounts in a direction parallel to the light-emitting surface of each of the first semiconductor laser elements. In plan view, a center of a width of the light-emitting surface of each of the second semiconductor laser elements does not coincide with a center of a width of a corresponding one of the second submounts in a direction parallel to the light-emitting surface of each of the second semiconductor laser elements.

[0013] According to at least one or a plurality of embodiments, the submounts of the same design can each be used jointly for two semiconductor laser elements having mutually different lengths corresponding to the longitudinal direction of the resonators. SHORT DESCRIPTION OF DRAWINGS Fig. 1 is a schematic perspective view of a light emitting device according to some embodiments. Fig. 2 is a schematic side view of the light emitting device according to some embodiments. Fig. 3 is a schematic cross-sectional view of a light-emitting device according to a first embodiment and a third embodiment, taken along a cross-sectional line III-III in Fig. 1. Fig. 4 is a schematic plan view for explaining an internal structure of the light-emitting device according to the first embodiment. Fig. Fig. 5 is a schematic plan view showing a state in which wirings of Fig. 4 away. Fig. 6 is a schematic top view of the submount according to some embodiments. Fig. 7A is a schematic plan view illustrating a state in which a first semiconductor laser element and a protection element are arranged on the submount. Fig. 7B is a schematic plan view illustrating a state in which a second semiconductor laser element and a protection element are arranged on the submount. Fig. 8 is a schematic side view illustrating a state in which the semiconductor laser element and the protection element are arranged on the submount. Fig. 9 is a schematic perspective view of a package according to some embodiments. Fig. Figure 10 is a schematic cross-sectional view of the package taken along a Fig. 9 shown cross-sectional line XX. Fig. 11 is a schematic plan view of a base according to some embodiments. Fig. 12 is a schematic bottom view of the base according to some embodiments. Fig. 13 is a schematic cross-sectional view of the base taken along a cross-sectional line XIII-XIII in Fig. 11. Fig. 14A is a schematic plan view for explaining an example of an internal structure of a light-emitting device according to a second embodiment. Fig. 14B is a schematic plan view illustrating a state in which a first semiconductor laser element and a protection element are arranged on a submount in an example of the light-emitting device according to the second embodiment. Fig. 14C is a schematic side view illustrating a state in which the semiconductor laser element and the protection element are arranged on the submount of the light-emitting device according to the second embodiment. Fig. 15A is a schematic plan view for explaining another example of the internal structure of the light-emitting device according to the second embodiment. Fig. 15B is a schematic plan view illustrating a state in which the second semiconductor laser element and the protection element are arranged on the submount in another example of the light-emitting device according to the second embodiment. Fig. 16 is a schematic perspective view of a light-emitting module according to a third embodiment. Fig. 17A is a schematic plan view for explaining an internal structure of a first light-emitting device according to the third embodiment. Fig. Fig. 17B is a schematic plan view showing a state in which wirings of Fig. 17A away. Fig. 17C is a schematic plan view for explaining an internal structure of a second light-emitting device according to the third embodiment. Fig. Fig. 17D is a schematic plan view showing a state in which wirings of Fig. 17C away. Fig. 18 is a schematic plan view of a wiring substrate according to the third embodiment. Fig. 19 is a schematic plan view for explaining the internal structure of the first light-emitting device and the second light-emitting device in the light-emitting module according to the third embodiment. Description of embodiments

[0014] In this specification or the claims, polygons such as triangles and quadrilaterals that include shapes in which the corners of the polygon are rounded, chamfered, beveled, or fluted are referred to as polygons. A shape obtained by machining not only the corners (ends of a side) but also an intermediate portion of the side is also referred to as a polygon. That is, a shape that is partially machined while retaining the basic shape of a polygon is included within the definition of "polygon" described in this specification and the claims.

[0015] The same applies not only to polygons, but also to words that represent specific shapes, such as trapezoids, circles, projections, and recesses. The same applies to each face that forms that shape. That is, even if a machining operation is performed on a corner or intermediate area of ​​a particular face, the interpretation of "face" includes the machined area. When a "polygon" or "face" that has not been partially machined is to be distinguished from a machined shape, an "exact" is added to the description, as in "exact quadrilateral."

[0016] Furthermore, in the present specification or claims, descriptions such as upper and lower (upward / downward), left and right, surface and back, front and back (forward / backward), and near and far are used merely to describe the relative relationship of positions, orientations, and directions, and the terms do not necessarily correspond to an actual relationship at the time of use.

[0017] In the drawings, directions such as an X direction, a Y direction, and a Z direction may be indicated using arrows. The directions of the arrows are consistent across multiple drawings of the same embodiment. Furthermore, in the drawings, the directions of the arrows marked X, Y, and Z are the positive directions, and the opposite directions are the negative directions. For example, the direction marked X at the tip of the arrow is the X direction and the positive direction. In the present specification, the direction that is the X direction and is the positive direction is referred to as the "positive direction of X," and the opposite direction is referred to as the "negative direction of X." The term "X direction" includes both the positive direction and the negative direction. The same applies to the Y direction and the Z direction.

[0018] Furthermore, when a particular object is specified as "one or more" and the object is described in this specification, an embodiment in which the object is one and an embodiment in which the object is plural are described together. Thus, a description specified as "one or more" in each case carries an embodiment including one or more objects, an embodiment including at least one object, and an embodiment including a plurality of objects.

[0019] Moreover, in the present specification, the description representing "one or each" object is a description that summarizes a description of an object in an embodiment that includes the one object, a description of an object in an embodiment that includes a plurality of objects, and a description of each of a plurality of objects in an embodiment that includes the plurality of objects.Thus, the description representing "one or each" object carries any instance of an embodiment including one object in which the one object satisfies the described content, an embodiment including a plurality of objects in which at least one of the objects satisfies the described content, an embodiment including a plurality of objects in which each of the plurality of objects satisfies the described content, and an embodiment including one or more objects in which all of the objects satisfies the described content.

[0020] The term "part" or "area" can be used to describe, for example, a component in this specification. The term "part" refers to an object that is physically treated in isolation. The object that is physically treated in isolation can be an object that is treated as a part in a manufacturing process. Meanwhile, the term "area" refers to an object that does not need to be physically treated in isolation. The term "area" is used, for example, when a part of a part is partially considered or when a plurality of components are considered together as a single object.

[0021] The distinction between "component" and "region" described above does not indicate an intention to deliberately limit the scope of the law in interpreting the doctrine of equivalents. That is, even if a component described as a "component" is present in the claims, this does not mean that the applicant recognizes that the physical treatment of the component alone is essential to the application of the present disclosure.

[0022] When a plurality of components are present in this specification or in the claims and these components are to be identified separately, the components can be distinguished by placing the terms "first" and "second" at the beginning of the component names. Objects to be distinguished may be different in this specification and in the claims. Thus, in some cases, the object identified by that component is not the same in this specification and in the claims, even if a component is given the same name in the claims as in this specification.

[0023] For example, if there are components in this specification that are distinguished by the designations "first," "second," and "third," and if components that are given the designations "first" and "third" in this specification are described in the claims, these components may be distinguished in the claims by the designation "first" and "second" for ease of understanding. In this case, the components that are referred to as "first" and "second" in the claims refer to the components that are referred to as "first" and "third" in this specification, respectively. This rule applies not only to components, but also to other objects in a reasonable and flexible manner.

[0024] An embodiment for implementing the present invention will be described below. A specific embodiment for implementing the present invention will be described below with reference to the drawings. An embodiment for implementing the present invention is not limited to the specific embodiment. That is, the embodiment shown in the drawings is not the only form in which the present invention is implemented. Sizes and positional relationships of components shown in each of the drawings may sometimes be exaggerated to facilitate understanding. First embodiment

[0025] A light-emitting device 1 according to a first embodiment will now be described. Fig. 1 to 13 are schematic drawings for explaining an exemplary shape of the light-emitting device 1. Fig. 1 is a schematic perspective view of the light-emitting device 1. Fig. 2 is a schematic side view of the light-emitting device 1. Fig. 3 is a schematic cross-sectional view of the light-emitting device 1, taken along a cross-sectional line III-III in Fig. 1. Fig. 4 is a schematic plan view for explaining an internal structure of the light-emitting device 1. Fig. Fig. 5 is a schematic plan view illustrating a state in which wirings 60 of Fig. 4 away. Fig. Figure 6 is a schematic plan view of submount 30. Fig. 7A is a schematic plan view illustrating a state in which a first semiconductor laser element 20A and a first protection element 50A are arranged on a first submount 30A. Fig. 7B is a schematic plan view illustrating a state in which a second semiconductor laser element 20B and a second protection element 50B are arranged on a second submount 30B. Fig. 8 is a schematic side view illustrating a state in which a semiconductor laser element 20 and a protection element 50 are arranged on a submount 30. Fig. 9 is a schematic perspective view of a package 10. Fig. Figure 10 is a schematic cross-sectional view of the package 10 taken along a cross-sectional line XX in Fig. 9. Fig. 11 is a schematic plan view of a base 11. Fig. 12 is a schematic bottom view of the base 11. Fig. 13 is a schematic cross-sectional view of the base 11 taken along a cross-sectional line XIII-XIII in Fig. 11.

[0026] The light-emitting device 1 includes a plurality of components. The plurality of components includes the package 10, one or more semiconductor laser elements 20, one or more submounts 30, one or more reflective components 40, one or more protective elements 50, a plurality of wirings 60, and an optical component 70.

[0027] The light-emitting device 1 may include a component other than the components described above. For example, the light-emitting device 1 may further include a semiconductor laser element that is different from the one or more semiconductor laser elements 20. The light-emitting device 1 may not include some of the components described above.

[0028] First, each of the components is described. Pack of 10

[0029] The package 10 includes the base 11 and a lid body 14. The lid body 14 is connected to the base 11 to form the package 10. An internal space in which other components are arranged is defined in the package 10. The internal space is a closed space surrounded by the base 11 and the lid body 14. The internal space may also be a sealed space in a vacuum or airtight state.

[0030] The outer edge shape of the package 10 in a plan view is rectangular. This rectangular shape may be a rectangular shape with long sides and short sides. In the illustrated package 10, the long-side direction of the rectangular shape is the same direction as the X direction, and the short-side direction of the rectangular shape is the same direction as the Y direction. The outer edge shape of the package 10 in a plan view does not have to be rectangular.

[0031] The internal space in which other components are arranged is formed in the package 10. A first upper surface 11A of the package 10 is part of a region that defines the internal space. Furthermore, inner lateral surfaces 11E and the lower surface 14B of the package 10 are part of the region that defines the internal space.

[0032] The base 11 has the first upper surface 11A and a lower surface 11B. The base 11 has a second upper surface 11C. The base 11 has one or more outer lateral surfaces 11D. The base 11 has one or more inner lateral surfaces 11E. The one or more outer lateral surfaces 11D meet the second upper surface 11C. The one or more outer lateral surfaces 11D meet the lower surface 11B. The one or more inner lateral surfaces 11E meet the second upper surface 11C.

[0033] The outer edge shape of the base 11 in a plan view is rectangular. The outer edge shape of the base 11 in a plan view is the outer edge shape of the package 10. The outer edge shape of the first upper surface 11A in a plan view is rectangular. This rectangular shape may be a rectangular shape with long sides and short sides. The long-side direction of the first upper surface 11A is parallel to the long-side direction of the outer edge shape of the base 11. The outer edge shape of the first upper surface 11A in a plan view does not have to be rectangular.

[0034] In a plan view, the first upper surface 11A is surrounded by the second upper surface 11C. The second upper surface 11C is an annular surface surrounding the first upper surface 11A in a plan view. The second upper surface 11C is a rectangular annular surface. Here, a frame defined by an inner edge of the second upper surface 11C is referred to as an inner frame of the second upper surface 11C, and a frame defined by an outer edge of the second upper surface 11C is referred to as an outer frame of the second upper surface 11C.

[0035] The base 11 has a recessed area surrounded by the frame formed by the second upper surface 11C. The recessed area defines an area recessed downward from the second upper surface 11C in the base 11. The first upper surface 11A is a part of the recessed area. The one or more inner lateral surfaces 11E are a part of the recessed area. The second upper surface 11C is located above the first upper surface 11A.

[0036] The base 11 includes one or more step portions 11F. Each of the step portions 11F includes an upper surface 11G and a lateral surface 11H that meets the upper surface 11G and extends downward from the upper surface 11G. Here, a step portion 11F has only one upper surface 11G and only one lateral surface 11H. The upper surface 11G meets the inner lateral surface 11E. The lateral surface 11H meets the first upper surface 11A.

[0037] One or each of the step portions 11F is formed on an inner side of the inner portion of the second upper surface 11C in a plan view. One or each of the step portions 11F is formed along part or all of the inner lateral surface 11E in a plan view. In the base 11, the lateral surface 11H is an inner lateral surface, but the lateral surface 11H and the inner lateral surface 11E are different surfaces. One or each of the inner lateral surfaces 11E and one or each of the lateral surfaces 11H are orthogonal to the first upper surface 11A. The term "orthogonal" as used herein allows a deviation within ±3 degrees.

[0038] The one or more step portions 11F may include a first step portion 11F1 and a second step portion 11F2. The first step portion 11F1 and the second step portion 11F2 are provided at positions where the respective lateral surfaces 11H face each other. The first step portion 11F1 and the second step portion 11F2 are provided on the short side sides of the inner frame of the second upper surface 11C.

[0039] One or each of the inner lateral surfaces 11E and one or each of the lateral surfaces 11H are located between the first upper surface 11A and the second upper surface 11C. The one or more inner lateral surfaces 11E include a first inner lateral surface 11E1 and a second inner lateral surface 11E2 facing each other. The base 11 has a plurality of lateral surfaces 11H including a first lateral surface 11H1 and a second lateral surface 11H2 facing each other.

[0040] The first inner lateral surface 11E1 meets the upper surface 11G of the first step region 11F1. The second inner lateral surface 11E2 meets the upper surface 11G of the second step region 11F2. The first lateral surface 11H1 is the lateral surface 11H of the first step region 11F1, and the second lateral surface 11H2 is the lateral surface 11H of the second step region 11F2.

[0041] The base 11 includes a base portion 11M and a frame portion 11N. The base portion 11M and the frame portion 11N may be components made of mutually different materials. The base 11 may include a base component corresponding to the base portion 11M and a frame component corresponding to the frame portion 11N.

[0042] The base portion 11M has the first upper surface 11A. The frame portion 11N has the second upper surface 11C. The frame portion 11N has the one or more outer lateral surfaces 11D and the one or more inner lateral surfaces 11E. The frame portion 11N includes the one or more step portions 11F.

[0043] The lower surface of the base portion 11M forms part or all of the region of the lower surface 11B of the base 11. When the lower surface of the base portion 11M forms part of the region of the lower surface 11B of the base 11, the lower surface of the frame portion 11N forms the remaining region of the lower surface 11B of the base 11.

[0044] The base 11 includes a plurality of wiring portions 12A. The wiring portions 12A include one or more first wiring portions 12A1 arranged in the internal space of the package 10 and one or more second wiring portions 12A2 provided on the outer surface of the package 10.

[0045] One or each of the first wiring regions 12A1 is provided on the upper surface 11G of the step region 11F. The base 11 includes the one or more first wiring regions 12A1 provided on the upper surface 11G of the first step region 11F1. The base 11 includes the one or more first wiring regions 12A1 provided on the upper surface 11G of the second step region 11F2.

[0046] One or each of the second wiring regions 12A2 is provided on the lower surface 11B of the package 10. One or each of the second wiring regions 12A2 is provided on the lower surface of the frame region 11N. The second wiring region 12A2 may be provided on an outer surface different from the lower surface 11B of the package 10.

[0047] When the base 11 is divided into two regions by a virtual line passing through the lateral surface 11H of the first step portion 11F1 and parallel to the lateral surface 11H in a plan view, the base 11 has the one or more second wiring portions 12A2 provided on the lower surface 11B of the base 11 in a region including the upper surface 11G of the first step portion 11F1.

[0048] When the base 11 is divided into two regions by a virtual line passing through the lateral surface 11H of the second step portion 11F2 and parallel to the lateral surface 11H in a plan view, the base 11 includes the one or more second wiring portions 12A2 provided on the lower surface 11B of the base 11 in a region including the upper surface 11G of the second step portion 11F2.

[0049] In the base 11, one or each of the first wiring regions 12A1 is electrically connected to the second wiring region 12A2. The one or more first wiring regions 12A1 are electrically connected to the mutually different second wiring regions 12A2.

[0050] The base 11 includes a connection pattern 13A. The connection pattern 13A is provided on the second upper surface 11C. The connection pattern 13A is provided in a ring shape. The connection pattern 13A is provided in a rectangular, ring-shaped form. In a plan view, the first upper surface 11A is surrounded by the connection pattern 13A.

[0051] The base 11 can be formed, for example, using a ceramic as a main material. Examples of the ceramic as the main material of the base 11 include aluminum nitride, silicon nitride, alumina, and silicon carbide.

[0052] Here, a main material refers to a material that accounts for the largest proportion of a formed target product in terms of mass or volume. If a formed target product is formed from a single material, that material is the main material. In other words, if a specific material is the main material, the proportion of that material can be 100%.

[0053] The base 11 may be formed using a base member and a frame member made of different main materials from each other. The base member may be formed using a main material having excellent heat dissipation, such as a metal or a composite material containing a metal, graphite, or diamond. Examples of the metal as the main material of the base member include, for example, copper, aluminum, and iron. Examples of the composite material containing the metal as the main material of the base member include, for example, copper-molybdenum and copper-tungsten. The frame member may be formed using any of the above-illustrated ceramics as the main material of the base 11.

[0054] The wiring region 12A can be formed, for example, using a metal material as a main material. Examples of the metal material as the main material of the wiring region 12A include single-component metals such as Cu, Ag, Ni, Au, Ti, Pt, Pd, Cr, and W, as well as alloys containing any of these metals. The wiring region 12A can be formed, for example, from one or more metal layers.

[0055] The interconnection pattern 13A can be formed, for example, using a metal material as a main material. Examples of the metal material as the main material of the interconnection pattern 13A include single-component metals such as Cu, Ag, Ni, Au, Sn, Ti, and Pd, as well as alloys containing any of these metals. The interconnection pattern 13A can be formed, for example, from one or more metal layers.

[0056] The lid body 14 has a top surface 14A and a bottom surface 14B. The lid body 14 also has one or more lateral surfaces 14C. The lid body 14 is formed from a flat plate having a rectangular parallelepiped shape. The lid body 14 does not necessarily have a rectangular parallelepiped shape.

[0057] The lid body 14 is connected to the base 11. The lower surface 14B of the lid body 14 is connected to the second upper surface 11C of the base 11. The lid body 14 is connected to the connection pattern 13A of the base 11. The lid body 14 is connected to the base 11 via an adhesive.

[0058] The cover body 14 has a transmissivity to transmit light. The term "transmissivity" as used herein refers to a transmittance of 80% or more for light incident on the cover body 14. The cover body 14 may partially contain a non-light-transmitting region (a region with no transmissivity).

[0059] The lid body 14 can be formed, for example, using glass as a main material. The lid body 14 can also be formed, for example, using sapphire as a main material. Semiconductor laser element 20

[0060] The semiconductor laser element 20 has an upper surface 21A, a lower surface 21B, and a plurality of lateral surfaces 21C. The shape of the upper surface 21A is a rectangle having long sides and short sides. An external shape of the semiconductor laser element 20 in a plan view is a rectangle having long sides and short sides. The shape of the upper surface 21A and the external shape of the semiconductor laser element 20 in the plan view are not limited thereto.

[0061] The semiconductor laser element 20 has a light-emitting surface 22 from which light is emitted. For example, the lateral surface 21C may serve as the light-emitting surface 22. The lateral surface 21C, which serves as the light-emitting surface 22, is incident on a short side of the upper surface 21A. For example, the upper surface 21A may serve as the light-emitting surface 22.

[0062] The plurality of lateral surfaces 21C includes a first lateral surface 21C1, which is a surface located on the opposite side to the light-emitting surface 22. The first lateral surface 21C1 meets a short side of the top surface 21A. In the semiconductor laser element 20, a resonator is extended in a direction orthogonal to the light-emitting surface 22. A direction orthogonal to the light-emitting surface 22 is referred to as a resonator direction.

[0063] The length of the semiconductor laser element 20 in the resonator direction is greater than the length of the semiconductor laser element 20 in the direction parallel to the light-emitting surface 22. In the illustrated semiconductor laser element 20, the resonator direction of the semiconductor laser element 20 is the same direction as the Y direction. The resonator direction is parallel to a direction in which the long side of the outer shape of the semiconductor laser element 20 extends in a plan view.

[0064] A single-emitter semiconductor laser element including one emitter may be used as the semiconductor laser element 20. A multi-emitter semiconductor laser element including a plurality of emitters may be used as the semiconductor laser element 20.

[0065] For example, a semiconductor laser element that emits blue light can be used as the semiconductor laser element 20. For example, a semiconductor laser element that emits green light can also be used as the semiconductor laser element 20. For example, a semiconductor laser element that emits red light can also be used as the semiconductor laser element 20. A semiconductor laser element that emits light of a different color or light having a different wavelength can be used as the semiconductor laser element 20.

[0066] Here, blue light refers to light that has a light emission peak wavelength in a range of 420 nm to 494 nm. Green light refers to light that has a light emission peak wavelength in a range of 495 nm to 570 nm. Red light refers to light that has a light emission peak wavelength in a range of 605 nm to 750 nm.

[0067] Examples of the semiconductor laser element 20 that emits blue light or the semiconductor laser element 20 that emits green light include a semiconductor laser element containing a nitride semiconductor. A GaN-based semiconductor such as GaN, InGaN, or AlGaN can be used as the nitride semiconductor. Examples of the semiconductor laser element 20 that emits red light include a semiconductor laser element containing an InAlGaP-based semiconductor, a GaInP-based semiconductor, or a GaAs-based semiconductor such as GaAs or AlGaAs.

[0068] The semiconductor laser element 20 emits a directional laser beam. Divergent light that expands is emitted from the light-emitting surface 22 (emission end surface) of the semiconductor laser element 20. The light emitted from the semiconductor laser element 20 forms a far-field pattern (hereinafter referred to as "FFP") with an elliptical shape in a plane parallel to the light-emitting surface 22. The FFP indicates a shape or a light intensity distribution of the emitted light at a position spaced from the light-emitting surface of the semiconductor laser element.

[0069] Here, light passing through the center of the elliptical shape of the FFP, in other words, light exhibiting a peak intensity in the light intensity distribution of the FFP, is referred to as light traveling along an optical axis or light passing through an optical axis. Based on the light intensity distribution of the FFP, light exhibiting an intensity equal to or greater than 1 / e 2 in terms of peak intensity is called main area light.

[0070] The shape of the FFP of the light emitted from the semiconductor laser element 20 has an elliptical shape in which a length in a stacking direction is longer than that in a direction orthogonal to the stacking direction in the plane parallel to the light-emitting surface 22. The stacking direction is a direction in which a plurality of semiconductor layers including an active layer are stacked in the semiconductor laser element 20. The direction orthogonal to the stacking direction may also be referred to as an in-plane direction of the semiconductor layer. A long diameter direction of the elliptical shape of the FFP may also be referred to as a fast-axis direction of the semiconductor laser element 20, and a short diameter direction of the elliptical shape of the FFP may also be referred to as a slow-axis direction of the semiconductor laser element 20.

[0071] Based on the light intensity distribution of the FFP, an angle at which light expands is determined, which has a light intensity of 1 / e 2 a peak light intensity is referred to as a divergence angle of light of the semiconductor laser element 20. Here, the divergence angle of light is given as an angle formed by light having the peak light intensity (light passing through an optical axis) and light having a light intensity of 1 / e 2 of the peak light intensity. In some cases, the divergence angle of light can also be determined based on, for example, the light intensity that is half of the peak light intensity, instead of based on the light intensity of 1 / e 2 of the peak light intensity. In this specification, the term “angle of divergence of light” itself refers to a divergence angle of light at the light intensity of 1 / e 2the peak light intensity.

[0072] The divergence angle in the fast-axis direction of the light emitted from the semiconductor laser element 20 may be 10 degrees or more and less than 40 degrees. Likewise, the divergence angle of the light in the slow-axis direction may be in a range of more than 0 degrees and equal to or less than 15 degrees. Likewise, the divergence angle of the light in the fast-axis direction is larger than the divergence angle of the light in the slow-axis direction.

[0073] For example, the divergence angle in the fast-axis direction of blue light emitted from the semiconductor laser element 20 may be 15 degrees or more and less than 30 degrees, and the divergence angle in the slow-axis direction thereof may be 2 degrees or more and less than 8 degrees. Likewise, the divergence angle in the fast-axis direction of green light emitted from the semiconductor laser element 20 may be, for example, 15 degrees or more and less than 30 degrees, and the divergence angle in the slow-axis direction thereof may be 2 degrees or more and less than 15 degrees. Likewise, the divergence angle in the fast-axis direction of red light emitted from the semiconductor laser element 20 may be, for example, 20 degrees or more and less than 40 degrees, and the divergence angle in the slow-axis direction thereof may be 2 degrees or more and less than 10 degrees. Submount 30

[0074] The submount 30 has a top surface 31A, a bottom surface 31B, and one or more lateral surfaces 31C. The top surface 31A can be said to be a mounting surface on which other components are mounted. The shape of the top surface 31A is rectangular. The rectangular shape of the top surface 31A can have short sides and long sides. The shape of the top surface 31A does not have to be rectangular.

[0075] The outer shape of the submount 30 in a plan view is rectangular. The rectangular shape of the submount 30 may have short sides and long sides. The outer shape of the submount 30 in a plan view does not have to be rectangular. The submount 30 may have an outer shape that has a length in one direction (hereinafter, the direction is referred to as a lateral direction of the submount 30) that is smaller than a length in a direction (hereinafter, the direction is referred to as a longitudinal direction of the submount 30) that is orthogonal to the one direction in a plan view. In the submount 30 illustrated in the drawings, the lateral direction is the same direction as the X direction, and the longitudinal direction is the same direction as the Y direction.

[0076] The submount 30 may include a substrate 32A and an upper metal member 32B. The submount 30 may further include a lower metal member 32C. The upper metal member 32B is provided on the upper surface side of the substrate 32A. The lower metal member 32C is provided on the lower surface side of the substrate 32A. The submount 30 further includes a wiring layer 33. The wiring layer 33 is provided on the upper metal member 32B.

[0077] The wiring layer 33 is provided on the upper surface 31A of the submount 30. Other components are arranged on the wiring layer 33. The wiring layer 33 has a first region 33A and a second region 33B. Various components are arranged in the first region 33A and the second region 33B.

[0078] The wiring layer 33 has a rectangular region in which the length in the longitudinal direction is greater than the width in the lateral direction in a plan view, and a protruding region extending in the lateral direction from the rectangular region. The protruding shape extends from a corner of the rectangle in the lateral direction. In other words, one side extending in the lateral direction of the wiring layer 33 includes one side extending in the lateral direction in the rectangular region and one side extending in the lateral direction in the protruding region.

[0079] The first region 33A includes this rectangular region in a plan view. The second region 33B includes this protruding region in a plan view. In the illustrated submount 30, the rectangular region is the first region 33A, and the protruding region is the second region 33B. The protruding region has a rectangular shape in which the ratio of the length in the longitudinal direction to the width in the lateral direction is smaller than that of the rectangular shape of the first region 33A.

[0080] Here, the center of the width of the first region 33A in the lateral direction of the submount 30 is referred to as a center point MP1, the center of the width of the submount 30 in the lateral direction of the submount 30 is referred to as a center point MP2, and the center of the width of the upper surface 31A in the lateral direction of the submount 30 is referred to as a center point MP3.

[0081] In a plan view, the center point MP1 of the first region 33A does not coincide with the center point MP2 of the submount 30 in the lateral direction. In a plan view, the center point MP1 of the first region 33A does not coincide with the center point MP3 of the upper surface 31A in the lateral direction. In a plan view, the center point MP2 of the submount 30 and the center point MP3 of the upper surface 31A coincide in the lateral direction. The term "coincide" as used herein allows a difference within ±60 µm.

[0082] Because the center point MP1 does not coincide with the center point MP2 or the center point MP3, the width in the lateral direction in which the second region 33B can be provided is larger than when the center point MP1 coincides with the center point MP2 or the center point MP3. This facilitates the assembly of the component arranged in the first region 33A and the component arranged in the second region 33B without bringing them into contact with each other, thereby improving productivity.

[0083] In a plan view, a distance between the center point MP2 and the center point MP1 in the lateral direction is in a range of 100 µm to 200 µm. This distance is preferably in a range of 45 µm to 85 µm. Setting the distance to 45 µm or more facilitates mounting the component arranged in the first region 33A and the component arranged in the second region 33B without bringing them into contact with each other. Setting the distance to 85 µm or less can suppress, to some extent, the deterioration of the heat dissipation performance of the component arranged in the first region 33A. The allowable upper limit of this distance can be determined depending on the degree of heat dissipation required for the component arranged in the first region 33A.

[0084] The difference between the length of the first region 33A and the length of the upper surface 31A in the longitudinal direction of the submount 30 is in a range of 0 µm to 130 µm. The wiring layer 33 is formed such that the first region 33A has a length close to the length of the mounting surface of the submount 30 in the longitudinal direction. The second region 33B extends from the boundary with the first region 33A to the end of the upper surface 31A in the lateral direction of the submount 30.

[0085] In a plan view, the length of the second region 33B is equal to or less than one-quarter of the length of the first region 33A in the longitudinal direction. In a plan view, a virtual straight line SL1 passing through the center of the length in the longitudinal direction of the submount 30 and parallel to the lateral direction of the submount 30 passes through the first region 33A and does not pass through the second region 33B.

[0086] The substrate 32A has an insulating property. The substrate 32A is formed of, for example, silicon nitride, aluminum nitride, or silicon carbide. It is preferable to select a ceramic with relatively good heat dissipation (having good thermal conductivity) as the main material of the substrate 32A.

[0087] A metal such as copper or aluminum is used as the main material of the upper metal member 32B. The upper metal member 32B includes one or more metal layers. The upper metal member 32B may include a plurality of metal layers formed using different metals as the main materials.

[0088] A metal, such as copper or aluminum, is used as the main material of the lower metal component 32C. The lower metal component 32C includes one or more metal layers. The lower metal component 32C may include a plurality of metal layers formed using different metals as the main materials.

[0089] The wiring layer 33 may be formed using a metal. For example, the wiring layer 33 may be formed using AuSn solder (a metal layer made of AuSn).

[0090] For example, the width of the submount 30 in the short-side direction or the lateral direction is in a range of 600 µm to 900 µm. The length of the submount 30 in the long-side direction or the longitudinal direction is in a range of 1300 µm to 1800 µm. A difference between the length in the longitudinal direction of the submount 30 and the width in the lateral direction of the submount 30 is in a range of 500 µm to 900 µm.

[0091] For example, the thickness of the submount 30 (the width in a direction orthogonal to the upper surface 31A) is in a range of 200 µm to 400 µm. Also, the thickness of the substrate 32A is, for example, in a range of 140 µm to 260 µm. Also, the thickness of the upper metal component 32B is, for example, in a range of 30 µm to 70 µm. Also, the thickness of the lower metal component 32C is, for example, in a range of 30 µm to 70 µm. Also, the thickness of the wiring layer 33 is, for example, in a range of 1 µm to 5 µm. Reflective component 40

[0092] The reflective member 40 has a bottom surface 41A and a light-reflecting surface 41B that reflects light. The light-reflecting surface 41B is inclined with respect to the bottom surface 41A. A straight line connecting a bottom end and an upper end of the light-reflecting surface 41B is inclined with respect to the bottom surface 41A. An angle at which the light-reflecting surface 41B is inclined with respect to the bottom surface 41A is referred to as an inclination angle of the light-reflecting surface 41B.

[0093] The light-reflecting surface 41B is a flat surface. The light-reflecting surface 41B may be a curved surface. The inclination angle of the light-reflecting surface 41B is 45 degrees. The light-reflecting surface 41B does not need to have an inclination angle of 45 degrees.

[0094] Glass or metal can be used as the main material of the reflective member 40. Preferably, a heat-resistant material is used as the main material of the reflective member 40. For example, a glass such as quartz glass or borosilicate glass (BK7) or a metal such as Al can be used as the main material. The reflective member 40 can also be formed using Si as the main material.

[0095] When the main material is a reflective material such as Al, the light-reflecting surface 41B may be formed from the main material. Instead of forming the light-reflecting surface 41B with the main material, a general shape of the reflective member 40 may be formed with the main material, and the light-reflecting surface 41B may be formed on a surface of the general shape. In this case, the light-reflecting surface 41B may be formed, for example, using a layer of a metal such as Ag or Al, or a dielectric multilayer film of Ta2O5 / SiO2, TiO 2 / SiO2, or Nb2O5 / SiO2.

[0096] In the light-reflecting surface 41B, the reflectance with respect to the peak wavelength of the light irradiated on the light-reflecting surface 41B is equal to or greater than 90%. The reflectance may be equal to or greater than 95%. The reflectance may be equal to or greater than 99%. The light reflectance is equal to or less than 100%, or is less than 100%. Protective element 50

[0097] The protective element 50 has a top surface 51A, a bottom surface 51B, and one or more lateral surfaces 51C. The shape of the protective element 50 is a rectangular parallelepiped. The shape of the protective element 50 need not be a rectangular parallelepiped.

[0098] The protective element 50 prevents breakage of a specific element (e.g., the semiconductor laser element) due to excessive current flow through the element. The protective element 50 is, for example, a Zener diode. A Zener diode formed of Si may be used. Wiring 60

[0099] Wiring 60 is a linearly conductive material that has connection areas at both ends. The connection areas at both ends serve as areas for connecting to other components. Wiring 60 is used for an electrical connection between two components. Wiring 60 is, for example, a metal wire. The metal used can be gold, aluminum, silver, or copper, for example. Optical component 70

[0100] The optical component 70 has a top surface 71A, a bottom surface 71B, and one or more lateral surfaces 71C. The optical component 70 imparts an optical effect to light incident on the optical component 70. Examples of the optical effect imparted to the light by the optical component 70 include condensation, collimation, scattering, polarization, diffraction, multiplexing, light pipetting, reflection, and wavelength conversion.

[0101] The optical component 70 has an optically effective surface that imparts the optical effect. The upper surface 71A, the lower surface 71B, or the lateral surface 71C can serve as the optically effective surface. Alternatively, the optically effective surface can be provided at a position different from the upper surface 71A, the lower surface 71B, or the lateral surface 71C. For example, the optically effective surface can be formed not on a surface of the optical component 70, but on an inner side of the optical component 70.

[0102] The optical component 70 may include one or more lens surfaces 71D. The lens surface 71D is the optically effective surface of the optical component 70. The optical component 70 including the lens surface 71D may be referred to as a lens component. Light passing through the lens surface 71D and emitted from the optical component 70 is imparted an optical effect of condensation, scattering, or collimation by the optical component 70. For example, the optical component 70 is a collimating lens that collimates light incident on the optical component 70 and emits the collimated light.

[0103] One or each of the lens surfaces 71D is provided on the side of the upper surface 71A. Note that the lens surface 71D may be provided on the side of the lower surface 71B. The upper surface 71A and the lower surface 71B are flat surfaces. The one or each of the lens surfaces 71D meets the upper surface 71A. In a plan view, the one or each of the lens surfaces 71D is surrounded by the upper surface 71A.

[0104] The outer shape of the optical component 70 is rectangular in a plan view. The outer shape of the optical component 70 does not have to be rectangular in a plan view. The bottom surface 71B is a flat surface. The lens surface 71D is not formed on the side of the bottom surface 71B of the optical component 70. The shape of the bottom surface 71B is rectangular. The shape of the bottom surface 71B does not have to be rectangular.

[0105] In the optical component 70, a region overlapping with the lens surface 71D in a plan view is a lens region 72A. In the optical component 70, a region overlapping with the upper surface 71A in a plan view is a non-lens region 72B. The lower surface 71B includes a region constituting the lower surface of one or each of the lens regions 72A and a region constituting the lower surface of the non-lens region 72B.

[0106] The optical component 70 may include a plurality of lens surfaces 71D formed continuously in one direction. A direction in which the plurality of lens surfaces 71D are aligned in a plan view is referred to as a coupling direction of the lenses. In the illustrated optical component 70, the coupling direction is the same direction as the X direction.

[0107] The plurality of lens surfaces 71D are formed such that the vertices of the respective lens surfaces 71D are provided on a straight line. The virtual straight line connecting the respective vertices is parallel to the bottom surface 71B of the optical component 70. The term "parallel" as used herein allows a difference within ±5 degrees.

[0108] The curvatures of two or more lens surfaces 71D, i.e., some or all of the plurality of lens surfaces 71D, may be the same. The plurality of lens surfaces 71D may all have the same curvatures.

[0109] The optical component 70 has transmissivity. In the optical component 70, the transmittance with respect to the peak wavelength of light incident on the optical component 70 is equal to or greater than 80%. The optical component 70 may include a region having transmissivity and a region having no transmissivity (hereinafter referred to as a non-light-transmitting region). In the non-light-transmitting region, the transmittance with respect to the peak wavelength of light incident on the optical component 70 is equal to or less than 50%. The optical component 70 may be formed using, for example, glass such as BK7.

[0110] Next, the light-emitting device 1 will be described. Light-emitting device 1

[0111] The light-emitting device 1 includes a plurality of semiconductor laser elements 20 and a plurality of submounts 30. The plurality of semiconductor laser elements 20 includes a first semiconductor laser element 20A and a second semiconductor laser element 20B that has a longer length than the first semiconductor laser element 20A in the resonator direction. The light-emitting device 1 may include the plurality of semiconductor laser elements 20 that includes one or more first semiconductor laser elements 20A and one or more second semiconductor laser elements 20B.

[0112] The length of the second semiconductor laser element 20B in the resonator direction is longer than the length of the first semiconductor laser element 20A in the resonator direction by a range of 200 µm to 700 µm. The length of one or each of the second semiconductor laser elements 20B in the resonator direction is longer than the length of any of the first semiconductor laser elements 20A in the resonator direction by a range of 200 µm to 700 µm. By adjusting the length in the resonator direction, the output of light emitted from the semiconductor laser element 20 can be adjusted.

[0113] The light emission peak wavelength of light emitted from the first semiconductor laser element 20A differs from the light emission peak wavelength of light emitted from the second semiconductor laser element 20B by 30 nm or more. The emission peak wavelength of light emitted from one or each of the first semiconductor laser elements 20A differs from the emission peak wavelength of light emitted from any of the second semiconductor laser elements 20B by 30 nm or more. The difference between the emission peak wavelength of light emitted from the first semiconductor laser element 20A and the emission peak wavelength of light emitted from the second semiconductor laser element 20B may be less than 30 nm. Alternatively, this difference may be 10 nm or less.

[0114] The one or each of the first semiconductor laser elements 20A emits light whose emission peak wavelength is a first wavelength ±15 nm. The one or each of the second semiconductor laser elements 20B emits light whose emission peak wavelength is a second wavelength ±15 nm.

[0115] The one or each of the first semiconductor laser elements 20A emits light having a first color. The one or each of the second semiconductor laser elements 20B emits light having a second color. The first color and the second color may be different. The color of the light emitted by the first semiconductor laser element 20A and the color of the light emitted by the second semiconductor laser element 20B may be the same.

[0116] Each of the semiconductor laser elements 20 is mounted on the submount 30. Each of the semiconductor laser elements 20 is arranged on the wiring layer 33 of the submount 30. Each of the semiconductor laser elements 20 is arranged in the first region 33A of the wiring layer 33.

[0117] The semiconductor laser element 20 is arranged on each of the plurality of submounts 30. One semiconductor laser element 20 is arranged on one submount 30. To distinguish the plurality of submounts 30, the submount 30 on which the first semiconductor laser element 20A is arranged is referred to as a first submount 30A, and the submount 30 on which the second semiconductor laser element 20B is arranged is referred to as a second submount 30B.

[0118] The first submount 30A and the second submount 30B are submounts 30 that have the same shape. In a plan view, the wiring layer 33 of the first submount 30A and the wiring layer 33 of the second submount 30B have the same shape.

[0119] For each of the semiconductor laser elements 20, a difference between the length of the first semiconductor laser element 20A in the direction parallel to the light-emitting surface 22 and a length of the second semiconductor laser element 20B in the direction parallel to the light-emitting surface 22 is in a range of 0 μm to 100 μm. Setting the difference to 100 μm or less can reduce the difference in edge space on the mounting surface when the first semiconductor laser element 20A and the second semiconductor laser element 20B are mounted on the submount 30 with the same design.

[0120] However, the length in the direction parallel to the light-emitting surface 22 of the one or each of the first semiconductor laser elements 20A may be 100 µm or more longer than the length in the direction parallel to the light-emitting surface 22 of any or a specific second semiconductor laser element 20B.

[0121] For example, the light-emitting device 1 may be provided with one or more first semiconductor laser elements 20A whose length in the resonator direction is smaller than that of the second semiconductor laser element 20B by 200 µm or more and whose length in the direction parallel to the light-emitting surface 22 is larger than that of the second semiconductor laser element 20B in a range of 0 µm to 100 µm.

[0122] Here, the center of the width of the light-emitting surface 22 in the direction parallel to the light-emitting surface 22 in a plan view is referred to as a center point MP4, and the center of the width of the submount 30 in the direction parallel to the light-emitting surface 22 in a plan view is referred to as a center point MP5. In the illustrated light-emitting device 1, the lateral direction of the submount 30 and the direction parallel to the light-emitting surface 22 in the plan view are in the same direction.

[0123] With respect to the plurality of semiconductor laser elements 20, the distance from the center point MP4 of the first semiconductor laser element 20A to the center point MP5 of the first submount 30A on which this first semiconductor laser element 20A is arranged is equal to the distance from the center point MP4 of the second semiconductor laser element 20B to the center point MP5 of the second submount 30B on which this second semiconductor laser element 20B is arranged. The term "equal" as used herein allows a difference within ±50 µm. By making these distances equal, the mounting of the first semiconductor laser element 20A and the second semiconductor laser element 20B on the submounts 30 of the same design is facilitated.

[0124] With respect to the plurality of semiconductor laser elements 20, the distance from the center point MP4 of the first semiconductor laser element 20A to the center point MP2 of the first submount 30A on which this first semiconductor laser element 20A is arranged is equal to the distance from the center point MP4 of the second semiconductor laser element 20B to the center point MP2 of the second submount 30B on which this second semiconductor laser element 20B is arranged. The term "equal" as used herein allows a difference within ±50 µm. By making these distances equal, the mounting of the first semiconductor laser element 20A and the second semiconductor laser element 20B on the submounts 30 of the same design is facilitated.

[0125] The one or each of the semiconductor laser elements 20 is placed such that the light-emitting surface 22 is included in a region near the outer edge side of the upper surface 31A in a plan view. In a plan view, the light-emitting surface 22 of the one or each of the semiconductor laser elements 20 is arranged between the lateral surface 31C of the upper metal member 32B and the lateral surface 31C of the substrate 32A, which face the same direction.

[0126] With respect to the plurality of semiconductor laser elements 20, in a plan view, the distance from the first lateral surface 21C1 of the first semiconductor laser element 20A to the lateral surface 31C of the first submount 30A facing the same direction as the first lateral surface 21C1 is larger than the distance from the first lateral surface 21C1 of the second semiconductor laser element 20B to the lateral surface 31C of the second submount 30B facing the same direction as the first lateral surface 21C1 in a range of 200 µm to 400 µm.

[0127] The protective element 50 is arranged on one or each of the submounts 30. To distinguish the protective elements 50, the protective element 50 arranged on the first submount 30A is referred to herein as a first protective element 50A, and the protective element 50 arranged on the second submount 30B is referred to as a second protective element 50B. The plurality of protective elements 50 includes one or more first protective elements 50A and one or more second protective elements 50B.

[0128] The plurality of submounts 30 includes one or more first submounts 30A on which the first semiconductor laser element 20A and the first protection element 50A are arranged, and one or more second submounts 30B on which the second semiconductor laser element 20B and the second protection element 50B are arranged.

[0129] In one or each of the submounts 30, the protection element 50 is disposed on the wiring layer 33. Each of the protection elements 50 is disposed in the second region 33B of the wiring layer 33. The first protection element 50A and the second protection element 50B are the protection elements 50 that have the same shape. The shape of the first protection element 50A and the shape of the second protection element 50B may be different.

[0130] One or each of the first protection elements 50A is not located between a first virtual straight line L1 and a second virtual straight line L2. The first virtual straight line L1 passes through the light-emitting surface 22 of the first semiconductor laser element 20A and is parallel thereto. The second virtual straight line L2 passes through the first lateral surface 21C1 of the first semiconductor laser element 20A and is parallel thereto in a plan view.

[0131] A part or all of one or each of the second protection elements 50B is placed between a third virtual straight line L3 and a fourth virtual straight line L4. The third virtual straight line L3 passes through the light-emitting surface 22 of the second semiconductor laser element 20B and is parallel thereto. The fourth virtual straight line L4 passes through the first lateral surface 21C1 of the second semiconductor laser element 20B in a plan view and is parallel thereto. The second protection element 50B is placed at a position through which the fourth virtual straight line L4 passes in a plan view.

[0132] With respect to the one or each of the first semiconductor laser elements 20A, in a plan view, the center point MP4 of the first semiconductor laser element 20A does not coincide with the center point MP5 of the first submount 30A on which this first semiconductor laser element 20A is arranged. With respect to the one or each of the second semiconductor laser elements 20B, in a plan view, the center point MP4 of the second semiconductor laser element 20B does not coincide with the center point MP5 of the second submount 30B on which this second semiconductor laser element 20B is arranged.

[0133] In this way, even if at least a part of the second protection member 50B is placed between the third virtual straight line L3 and the fourth virtual straight line L4, the second protection member 50B can be stably mounted on the second submount 30B by offsetting the center point MP4 without coinciding with the center point MP5. Thus, the submounts 30 of the same design can be used together for two semiconductor laser elements 20 having mutually different lengths in the resonator direction. Using the submounts 30 together can contribute to improving the productivity of the light-emitting device 1.

[0134] The one or each of the protection members 50 is placed in a region having a larger area when the upper surface 31A of the submount 30 is divided into two regions by the virtual straight line SL2 passing through the center point MP1 of the submount 30 and being parallel to the longitudinal direction of the submount 30.

[0135] Here, of the two lateral surfaces 21C that meet the light-emitting surface 22 of the semiconductor laser element 20, the lateral surface 21C that is closer to the protective element 50 is referred to as a second lateral surface 21C2, and the lateral surface 21C that is farther from the protective element 50 is referred to as a third lateral surface 21C3.

[0136] One or each of the protective elements 50 is placed on the upper surface 31A of the submount 30 in the vicinity of the lateral surface 31C of the submount 30 facing in the same direction as the first lateral surface 21C1 and in the vicinity of the lateral surface 31C of the submount 30 facing in the same direction as the second lateral surface 21C2.

[0137] With respect to one or each of the submounts 30, the distance from the center point MP4 of the semiconductor laser element 20 to the lateral surface 31C of the submount 30 facing the same direction as the third lateral surface 21C3 in the direction parallel to the light-emitting surface 22 is less than or equal to twice the width of the protective member 50. This distance is preferably in a range of 260 µm to 420 µm. Setting the distance to 260 µm or more can ensure heat dissipation to the semiconductor laser element 20, and setting the distance to 420 µm or less can reduce the width of the submount 30 in the direction parallel to the light-emitting surface 22.

[0138] With respect to one or each of the second semiconductor laser elements 20B, the center point MP4 of the second semiconductor laser element 20B is separated from the center point MP5 of the second submount 30B on which this second semiconductor laser element 20B is mounted, in a plan view within a range of 10 µm to 200 µm in the direction parallel to the light-emitting surface 22 of the second semiconductor laser element 20B. Separating the center point MP4 from the center point MP5 by 10 µm or more can achieve stable mounting of the semiconductor laser element 20 and the protective member 50. Separating the center point MP4 from the center point MP5 by no more than 200 µm can ensure sufficient heat dissipation to the semiconductor laser element 20.

[0139] With respect to the one or each of the first semiconductor laser elements 20A, the center point MP4 of the first semiconductor laser element 20A is separated from the center point MP5 of the first submount 30A on which this first semiconductor laser element 20A is arranged in a plan view in a range of 10 µm to 200 µm in the direction parallel to the light-emitting surface 22 of the first semiconductor laser element 20A.

[0140] For the first semiconductor laser element 20A and the second semiconductor laser element 20B, the distance from the center point MP4 of the semiconductor laser element 20 to the center point MP5 of the submount 30 on which this semiconductor laser element 20 is mounted is the same in the direction parallel to the light-emitting surface 22 of the semiconductor laser element 20. This facilitates the placement of the plurality of semiconductor laser elements 20 by arranging the light-emitting points at equal intervals.

[0141] With respect to the plurality of semiconductor laser elements 20, the distance between the first semiconductor laser element 20A and the first protection element 50A arranged on the first submount 30A is greater than the distance between the second semiconductor laser element 20B and the second protection element 50B arranged on the second submount 30B. With respect to the plurality of semiconductor laser elements 20, the distance between the first semiconductor laser element 20A and the first protection element 50A arranged on the first submount 30A is equal to the distance between the second semiconductor laser element 20B and the second protection element 50B arranged on the second submount 30B, in the distance in the direction parallel to the light-emitting surface 22 of the semiconductor laser element 20.Mounting the semiconductor laser element 20 and the protective element 50 on the submount 30 in this manner allows the submounts 30 of the same design to be used in common for two semiconductor laser elements having mutually different lengths in the resonator direction.

[0142] With respect to the one or each of the first submounts 30A, the length of the first submount 30A in the resonator direction is greater than the sum of the respective lengths of the first semiconductor laser element 20A and the first protection element 50A arranged on this first submount 30A in a plan view.

[0143] With respect to one or each of the second submounts 30B, the length of the second submount 30B in the resonator direction is greater than the sum of the respective lengths of the second semiconductor laser element 20B and the second protection element 50B disposed on this second submount 30B in a plan view. This suppresses the increase in the length of the submount 30B in the resonator direction and thus contributes to a reduction in the size of the light-emitting device 1.

[0144] The plurality of semiconductor laser elements 20 are placed in the internal space of the package 10. The plurality of submounts 30 are placed in the internal space of the package 10. The plurality of semiconductor laser elements 20 are placed on the first upper surface 11A via the submounts 30. The plurality of submounts 30 are placed on the first upper surface 11A.

[0145] The plurality of submounts 30 are arranged adjacent to each other in a first direction on the first upper surface 11A of the base 11. The plurality of submounts 30 are arranged adjacent to each other such that the interval between the submounts 30 arranged adjacent to each other is 300 µm or less. In the illustrated light-emitting device 1, the first direction is the same as the positive direction of X or the negative direction of X.

[0146] The plurality of submounts 30 are arranged side by side in a direction in which the first inner lateral surface 11E1 and the second inner lateral surface 11E2 face each other. The direction in which the two inner lateral surfaces face each other is a direction from one inner lateral surface to the other inner lateral surface. The plurality of submounts 30 are arranged side by side in a direction in which the first lateral surface 11H1 and the second lateral surface 11H2 face each other.

[0147] The plurality of semiconductor laser elements 20 are arranged side by side in the first direction on the first upper surface 11A of the base 11. Each of the plurality of semiconductor laser elements 20 is placed on the first upper surface 11A via the submount 30.

[0148] The plurality of semiconductor laser elements 20 are arranged at equal intervals in the first direction. The term "equal interval" as used herein allows a difference within ±50 µm. The plurality of semiconductor laser elements 20 are arranged such that emission points of light emitted from the light-emitting surface 22 are arranged at equal intervals in the first direction. The term "equal interval" as used herein allows a difference within ±50 µm.

[0149] The plurality of submounts 30 are arranged at equal intervals in the first direction. The term "equal interval" as used herein allows a difference of ±50 µm. In each of the submounts 30, the center point MP1 of the submount 30 is separated from the center point MP2 in the first direction. This facilitates the arrangement of the plurality of semiconductor laser elements 20 at equal intervals in the first direction.

[0150] In each of the semiconductor laser elements 20, the center point MP4 of the semiconductor laser element 20 is separated in the first direction from the center point MP5 of the submount 30 on which this semiconductor laser element 20 is arranged.

[0151] In a plan view in the first direction, the distance from the first lateral surface 11H1 to the submount 30 of the plurality of submounts 30 arranged at a position closest to the first lateral surface 11H1 is greater than the distance between the submounts 30 arranged adjacent to each other and smaller than the width of the submount 30. Placing the submount 30 in this way allows more semiconductor laser elements 20 to be placed in the internal space of the package 10.

[0152] In a plan view in the first direction, the distance from the second lateral surface 11H2 to the submount 30 of the plurality of submounts 30 arranged at a position closest to the second lateral surface 11H2 is greater than the distance between the submounts 30 arranged adjacent to each other and smaller than the width of the submount 30. Placing the submount 30 in this way allows more semiconductor laser elements 20 to be placed in the internal space of the package 10.

[0153] In a plan view, in the first direction, the distance from the first lateral surface 11H1 to the submount 30 of the plurality of submounts 30 arranged at a position closest to the first lateral surface 11H1 is different from the distance from the second lateral surface 11H2 to the submount 30 of the plurality of submounts 30 arranged at a position closest to the second lateral surface 11H2. Placing the submount 30 in this way allows the plurality of semiconductor laser elements 20 to be placed in a centrosymmetric manner with respect to the first direction in the internal space of the package 10.

[0154] In a plan view, in the second direction orthogonal to the first direction, the distance from the lateral surface 31C of the first submount 30A facing in the same direction as the first lateral surface 21C1 of the first semiconductor laser element 20A to the inner lateral surface 11E of the base 11 facing in the first lateral surface 21C1 is smaller than the distance obtained by adding 200 µm to the difference between the lengths of the first semiconductor laser element 20A and the second semiconductor laser element 20B in the resonator direction.When the first submount 30A is placed in this way, assuming a submount in which the second protection element 50B is separated from the second semiconductor laser element 20B in the resonator direction, the light-emitting surface 22 of the first semiconductor laser element 20A and the light-emitting surface 22 of the second semiconductor laser element 20B are greatly different in the resonator direction. Therefore, as in the light-emitting device 1, there is an additional advantage in using the submounts 30 of the same design for the first semiconductor laser element 20A and the second semiconductor laser element 20B, respectively.

[0155] This distance is less than or equal to 100 µm for the two semiconductor laser elements 20 of the plurality of semiconductor laser elements 20 that have the maximum distance from the light-emitting surface 22 to the light-emitting surface 22 in the second direction. Alternatively, this distance may be 50 µm or less. Alternatively, this distance may be 30 µm or less. The light-emitting surfaces 22 of the plurality of semiconductor laser elements 20 are positioned such that they do not deviate greatly in the second direction.

[0156] Each of the plurality of semiconductor laser elements 20 emits light in the second direction from the light-emitting surface 22. With respect to the plurality of semiconductor laser elements 20, the light emitted from the light-emitting surface 22 and traveling along the optical axis is the light traveling in the second direction. Each of the semiconductor laser elements 20 emits light from the light-emitting surface 22 in the FFP where the second direction is the optical axis.

[0157] The light emitted by the plurality of semiconductor laser elements 20 can be considered as a collection of light emitted by each of the semiconductor laser elements 20. Here, the light emitted by each semiconductor laser element 20 is referred to as partial light, as opposed to the light emitted by the plurality of semiconductor laser elements 20. The light emitted by the plurality of semiconductor laser elements 20 is formed by a plurality of partial lights.

[0158] In the light-emitting device 1, one or more reflective members 40 are placed in the internal space of the package 10. The one or more reflective members 40 are placed on the first upper surface 11A. One reflective member 40 may be placed corresponding to one semiconductor laser element 20. In this case, the light-reflecting surface 41B of one reflective member 40 may be irradiated with one main area light of one partial light. In addition, in this case, the light-reflecting surface 41B of one reflective member 40 is not irradiated with the main area lights of two partial lights.

[0159] One or more reflective members 40 reflect light emitted from the plurality of semiconductor laser elements 20. Light emitted from the plurality of semiconductor laser elements 20 is reflected upward by the light-reflecting surface 41B of the one or more reflective members 40. The light traveling along the optical axis in each partial light is emitted from the light-emitting surface 22, reflected by the light-reflecting surface 41B, and travels in a direction orthogonal to the first upper surface 11A.

[0160] A plurality of points P1, formed by points P1 at which one or more reflective members 40 are irradiated with light traveling along the optical axis in each of the plurality of partial lights, are positioned line-symmetrically in a plan view in the first direction around the virtual straight line SL3 passing through the center of both ends of the base 11 in the first direction and orthogonal to the first direction. This allows the plurality of partial lights to be emitted from the light-emitting device 1 in a similar line-symmetric arrangement, facilitating optical design using the light emitted from the light-emitting device 1.

[0161] In a plan view, in the first direction, the distance from the center of both ends of the base 11 in the first direction to the center of both ends EP1 in the first direction of the one or more reflective members 40 is smaller than the distance from the center of both ends of the base 11 in the first direction to the center of both ends EP2 in the first direction of the plurality of submounts 30. Designing the mounting position based on the reflective member 40 instead of the submount 30 with respect to the center of the package 10 in the first direction facilitates the optical design using the light emitted from the light-emitting device 1.

[0162] In the light-emitting device 1, a plurality of wirings 60 are placed in the internal space of the package 10. The plurality of wirings 60 include two or more wirings 60 for electrically connecting the plurality of semiconductor laser elements 20 to the base 11. The plurality of wirings 60 include two or more wirings 60 for electrically connecting the plurality of protection elements 50 to the base 11. The provision of the plurality of wirings 60 allows electric power to be supplied to the plurality of semiconductor laser elements 20 through the base 11 from an external power source.

[0163] The plurality of wirings 60 includes two or more wirings 60 for electrically connecting the one or more first semiconductor laser elements 20A to the base 11. The plurality of wirings 60 includes two or more wirings 60 for electrically connecting the one or more second semiconductor laser elements 20B to the base 11.

[0164] The plurality of wirings 60 includes the wiring 60 connected to the first wiring region 12A1. The plurality of wirings 60 includes the wiring 60 connected to a first wiring region 12A1 provided on the first inner lateral surface 11E1 side and a wiring 60 connected to the first wiring region 12A1 provided on the second inner lateral surface 11E2 side. The plurality of wirings 60 includes a wiring 60 not connected to the first wiring region 12A1.

[0165] The first wiring region 12A1 provided on the upper surface 11G of a first step region 11F1 is an example of the first wiring region 12A1 provided on the first inner lateral surface 11E1 side, and the first wiring region 12A1 provided on the upper surface 11G of a second step region 11F2 is an example of the first wiring region 12A1 provided on the second inner lateral surface 11E2 side.

[0166] In the light-emitting device 1, the optical component 70 is placed on an optical path of light emitted from the plurality of semiconductor laser elements 20. The optical component 70 is fixed to the package 10. The optical component 70 is placed outside the package 10. The optical component 70 is connected to the top surface 14A.

[0167] The light emitted from the plurality of semiconductor laser elements 20 is given an optical effect and emitted from the optical component 70. For example, each of the plurality of partial lights is collimated by the lens surface 71D and emitted from the optical component 70 as the collimated light. Also, for example, each of the plurality of partial lights is emitted from the optical component 70 as wavelength-converted light.

[0168] With respect to each of the plurality of partial lights, the light passing through the optical axis passes through the optical axis OA of the lens surface 71D of the optical member 70. With respect to the plurality of partial lights, the main area light in the partial lights passes through lens surfaces 71D, respectively.

[0169] The optical component 70 is placed such that the coupling direction is the same as the first direction. A plurality of optical axes OA formed by the optical axes OA of respective lens surfaces of the plurality of lens surfaces 71D are positioned line-symmetrically in a plan view in the first direction around the virtual straight line SL3 passing through the center of both ends in the first direction of the base 11 and orthogonal to the first direction in a plan view. Alternatively, the same can be said by replacing "optical axes OA" with "vertices." This facilitates optical design using the light emitted from the light-emitting device 1.

[0170] In a plan view, in the first direction, the distance from the center of both ends of the base 11 in the first direction to the center of the vertices of both lens surfaces 71D in the plurality of lens surfaces 71D arranged in the first direction is smaller than the distance from the center of both ends of the base 11 in the first direction to the center of both ends EP2 of the plurality of submounts 30 in the first direction. Designing the mounting position based on the optical component 70 instead of the submount 30 with respect to the center of the package 10 in the first direction facilitates the optical design using the light emitted from the light-emitting device 1. Second embodiment

[0171] A light-emitting device 2 according to the second embodiment will now be described. Fig. 1, 2 and 6 to 15B are schematic drawings for explaining an exemplary shape of the light-emitting device 2. Fig. 1 is a schematic perspective view of the light-emitting device 2. Fig. 2 is a schematic side view of the light-emitting device 2. Fig. 14A is a schematic plan view for explaining a first example of the internal structure of the light-emitting device 2. Fig. 14B is a schematic plan view illustrating a state in which the first semiconductor laser element 20A and the first protection element 50A are arranged on the first submount 30A. Fig. Fig. 14C is a schematic side view illustrating a state in which the semiconductor laser element 20 and the protection element 50 shown in Fig. 14B and Fig. 15B, are arranged on the submount 30. Fig. 15A is a schematic plan view for explaining a second example of the internal structure of the light-emitting device 2. Fig. 15B is a schematic plan view illustrating a state in which the second semiconductor laser element 20B and the second protection element 50B are arranged on the second submount 30B. Fig. Figure 6 is a schematic plan view of submount 30. Fig. 7A is a schematic plan view illustrating a state in which the first semiconductor laser element 20A and the first protection element 50A are arranged on the first submount 30A in the internal structure of the second example. Fig. 7B is a schematic plan view illustrating a state in which the second semiconductor laser element 20B and the second protection element 50B are arranged on the second submount 30B in the internal structure of the first example. Fig. Fig. 8 is a schematic side view illustrating a state in which the semiconductor laser element 20 and the Fig. 7A and Fig. 7B shown protective element 50 are arranged on the submount 30. Fig. Figure 9 is a schematic perspective view of the package 10. Fig. Figure 10 is a schematic cross-sectional view of the package 10A taken along a cross-sectional line XX in Fig. 9. Fig. 11 is a schematic plan view of the base 11. Fig. 12 is a schematic bottom view of the base 11. Fig. 13 is a schematic cross-sectional view of the base 11 taken along a cross-sectional line XIII-XIII in Fig. 11.

[0172] All of the above description of the light-emitting device 1 and the components of the first embodiment is also applicable to the description of the light-emitting device 2, except for the contents that are considered to be contradictory to the drawings relating to the light-emitting device 2 of the Fig. 1, 2, and 6 to 15B. All non-contradictory content is not repeated here to avoid duplication. Light-emitting device 2

[0173] In the light-emitting device 2, of the first submount 30A and the second submount 30B, the protection element 50 arranged on one submount 30 is arranged on the first lateral surface 21C1 side of the semiconductor laser element 20, and the protection element 50 arranged on the other submount 30 is arranged on the light-emitting surface 22 side of the semiconductor laser element 20.

[0174] In the example of Fig. 14A, the first protection element 50A arranged on the first submount 30A is arranged on the light-emitting surface 22 side of the first semiconductor laser element 20A, and the second protection element 50B arranged on the second submount 30B is arranged on the first lateral surface 21C1 side of the second semiconductor laser element 20B. In the example of Fig. 15A, the first protection element 50A disposed on the first submount 30A is disposed on the first lateral surface 21C1 side of the first semiconductor laser element 20A, and the second protection element 50B disposed on the second submount 30B is disposed on the light-emitting surface 22 side of the second semiconductor laser element 20B.

[0175] In the example of Fig. 14A is a plan view of one or each of the first protection elements 50A placed between the first virtual straight line L1 passing through and parallel to the light-emitting surface 22 of the first semiconductor laser element 20A and the second virtual straight line L2 passing through and parallel to the first lateral surface 21C1 of the first semiconductor laser element 20A.

[0176] In the example of Fig. 14A, the one or each of the first protection members 50A is placed on the upper surface 31A of the first submount 30A in the vicinity of the lateral surface 31C of the first submount 30A facing the same direction as the light-emitting surface 22 and in the vicinity of the lateral surface 31C of the first submount 30A facing the same direction as the third lateral surface 21C3.

[0177] In the example of Fig. 15A, one or each of the second protection members 50B is placed on the upper surface 31A of the second submount 30B in the vicinity of the lateral surface 31C of the second submount 30B facing the same direction as the light-emitting surface 22 and in the vicinity of the lateral surface 31C of the second submount 30B facing the same direction as the third lateral surface 21C3.

[0178] In the example of Fig. 14A, with respect to the plurality of semiconductor laser elements 20, the distance between the first semiconductor laser element 20A and the first protection element 50A arranged on the first submount 30A is equal to the distance between the second semiconductor laser element 20B and the second protection element 50B arranged on the second submount 30B.

[0179] The plurality of submounts 30 are arranged at equal intervals in the first direction, except for the first submount 30A and the second submount 30B, which are arranged adjacent to each other. The distance between the first submount 30A and the second submount 30B, which are arranged adjacent to each other, is greater than the distance between the first submounts 30A, which are arranged adjacent to each other. The distance between the first submount 30A and the second submount 30B, which are arranged adjacent to each other, is greater than the distance between the second submounts 30B, which are arranged adjacent to each other.

[0180] In each of the first submounts 30A, the center point MP1 of the first submount 30A is separated from the center point MP2 in the first direction. In each of the second submounts 30B, the center point MP1 of the second submount 30B is separated from the center point MP2 in the direction opposite to the first direction. In the example of Fig. 14A, the first direction is the same direction as the negative direction of X, while in the example of Fig. 15A the first direction is the same direction as the positive direction of X.

[0181] In each of the first semiconductor laser elements 20A, the center point MP4 of the first semiconductor laser element 20A is separated in the first direction from the center point MP5 of the first submount 30A on which this first semiconductor laser element 20A is arranged. In each of the second semiconductor laser elements 20B, the center point MP4 of the second semiconductor laser element 20B is separated in the direction opposite to the first direction from the center point MP5 of the second submount 30B on which this second semiconductor laser element 20B is arranged. In the example of Fig. 14A, the first direction is the same direction as the negative direction of X, while in the example of Fig. 15A the first direction is the same direction as the positive direction of X.

[0182] In a plan view, in the first direction, the distance from the first lateral surface 11H1 to the submount 30 of the plurality of submounts 30 located at a position closest to the first lateral surface 11H1 is equal to the distance from the second lateral surface 11H2 to the submount 30 of the plurality of submounts 30 located at a position closest to the second lateral surface 11H2. Placing the submount 30 in this way allows the plurality of semiconductor laser elements 20 to be placed in a centrosymmetric manner with respect to the first direction in the internal space of the package 10. Third embodiment

[0183] A light-emitting module 901 according to a third embodiment will be described. Fig. 1 to 3, 6 to 13 and 16 to 19 are schematic drawings for explaining an exemplary shape of the light-emitting module 901. Fig. 16 is a schematic perspective view of the light-emitting module 901. Fig. 1 is a schematic perspective view of the first light-emitting device 1A and the second light-emitting device 1B. Fig. 2 is a schematic side view of the first light-emitting device 1A and the second light-emitting device 1B. Fig. 3 is a schematic cross-sectional view of the first light-emitting device 1A and the second light-emitting device 1B, taken along a cross-sectional line III-III in Fig. 1. Fig. 17A is a schematic plan view for explaining an internal structure of the first light-emitting device 1A. Fig. Fig. 17B is a schematic plan view illustrating a state in which the wirings 60 of Fig. 17A away. Fig. 17C is a schematic plan view for explaining an internal structure of the second light-emitting device 1B. Fig. Fig. 17D is a schematic plan view illustrating a state in which the wirings 60 of Fig. 17C away. Fig. Figure 6 is a schematic plan view of submount 30. Fig. Fig. 7A is a schematic plan view illustrating a state in which the first semiconductor laser element 20A and the first

[0184] Protective element 50A is arranged on the first submount 30A. Fig. 7B is a schematic plan view illustrating a state in which the second semiconductor laser element 20B and the second protection element 50B are arranged on the second submount 30B. Fig. 8 is a schematic side view illustrating a state in which the semiconductor laser element 20 and the protection element 50 are arranged on the submount 30. Fig. Figure 9 is a schematic perspective view of the package 10. Fig. Figure 10 is a schematic cross-sectional view of the package 10 taken along a cross-sectional line XX in Fig. 9. Fig. 11 is a schematic plan view of the base 11. Fig. 12 is a schematic bottom view of the base 11. Fig. 13 is a schematic cross-sectional view of the base 11 taken along a cross-sectional line XIII-XIII in Fig. 11. Fig. 18 is a schematic plan view of a wiring substrate 101. In Fig. 18, a first connection region 101R1 and a second connection region 101R2 are indicated by hatching. Fig. 19 is a schematic plan view for explaining an internal structure of the first light-emitting device 1A and the second light-emitting device 1B in the light-emitting module 901.

[0185] The light-emitting module 901 includes a plurality of components. A plurality of components provided in the light-emitting module 901 includes the first light-emitting device 1A, the second light-emitting device 1B, the wiring substrate 101, a connector 201, and a thermistor 301.

[0186] The light-emitting module 901 may also include a component other than these components. For example, the light-emitting module 901 may include a light-emitting device other than the first light-emitting device 1A and the second light-emitting device 1B. The light-emitting module 901 may not include some of the plurality of components described above.

[0187] All of the above description of the light-emitting device 1 and the components of the first embodiment is also applicable to the description of the first light-emitting device 1A and the second light-emitting device 1B, except for the contents that are considered to be contradictory to the drawings of the Fig. 1 to 3, 6 to 13, and 16 to 19, which relate to the light-emitting module 901. Any non-contradictory content is not repeated here to avoid duplication.

[0188] First Light-Emitting Device 1A and Second Light-Emitting Device 1B The first light-emitting device 1A and the second light-emitting device 1B each include a plurality of components. The plurality of components in each of the light-emitting devices includes the package 10, one or more semiconductor laser elements 20, one or more submounts 30, one or more reflective components 40, one or more protective elements 50, the plurality of wirings 60, and the optical component 70.

[0189] The plurality of semiconductor laser elements 20 provided in the first light-emitting device 1A includes the plurality of first semiconductor laser elements 20A. The plurality of semiconductor laser elements 20 provided in the second light-emitting device 1B includes the plurality of second semiconductor laser elements 20B. The first light-emitting device 1A includes the plurality of first submounts 30A, and the second light-emitting device 1B includes the plurality of second submounts 30B. The first light-emitting device 1A includes the plurality of first protection elements 50A, and the second light-emitting device 1B includes the plurality of second protection elements 50B.

[0190] The plurality of semiconductor laser elements 20 provided in the first light-emitting device 1A is formed by the plurality of first semiconductor laser elements 20A. Thus, the first light-emitting device 1A does not include the second semiconductor laser elements 20B. The plurality of semiconductor laser elements 20 provided in the second light-emitting device 1B is formed by the plurality of second semiconductor laser elements 20B. The second light-emitting device 1B does not include the first semiconductor laser elements 20A. The first light-emitting device 1A may include the second semiconductor laser elements 20B. The second light-emitting device 1B may include the first semiconductor laser elements 20A.

[0191] The first light-emitting device 1A and the second light-emitting device 1B each include the package 10 having the same external shape. The first light-emitting device 1A and the second light-emitting device 1B each include the base 11 having the same external shape.

[0192] The quantity of the first semiconductor laser elements 20A provided in the first light-emitting device 1A is equal to the quantity of the second semiconductor laser elements 20B provided in the second light-emitting device 1B. Commonly using the submounts 30 of the same shape for the packages 10 of the same outer shape facilitates mounting the same quantity of semiconductor laser elements 20 in the first light-emitting device 1A and the second light-emitting device 1B. Wiring substrate 101

[0193] The wiring substrate 101 has a top surface 101A, a bottom surface 101B, and one or more lateral surfaces 101C. The wiring substrate 101 has a plate-like shape. The outer edge shape of the wiring substrate 101 in a plan view is rectangular. This rectangular shape may be a rectangular shape with long sides and short sides. In the package 10 shown in the drawings, a short-side direction of the rectangular shape is the same direction as the X direction, and a long-side direction is the same direction as the Y direction.

[0194] The wiring substrate 101 includes heat dissipation regions 101D, electrode regions 101E, and an insulation region 101F. The heat dissipation region 101D functions as a heat dissipation path for heat generated by other components mounted on the wiring substrate 101. The electrode region 101E is electrically connected to the other components mounted on the wiring substrate 101.

[0195] The insulation region 101F insulates the heat dissipation region 101D and the electrode region 101E. The insulation region 101F is provided to insulate an electrical connection between the heat dissipation region 101D and the electrode region 101E in the wiring substrate 101.

[0196] The wiring substrate 101 is provided with one or more through holes 101H. The one or more through holes 101H include a through hole 101H used to fix the wiring substrate 101 to another component. For example, a screw is inserted into the through hole 101H to fix the wiring substrate 101 to another component. The one or more through holes 101H include the through hole 101H used to determine positions when fixing the wiring substrate 101 to another component.

[0197] A metal material can be used as the main material of the heat dissipation region 101D. For example, a single-component metal such as Cu, Ag, Al, Ni, Rh, Au, Ti, Pt, Pd, Mo, Cr, and W, or an alloy containing any of these metals, can be used as the main material of the heat dissipation region 101D. The heat dissipation region 101D is preferably made of a material that has excellent heat dissipation. The heat dissipation region 101D can be made with a copper content of 95 mass% or more.

[0198] A metal material can be used as the main material of the electrode region 101E. For example, a single-component metal such as Cu, Ag, Al, Ni, Rh, Au, Ti, Pt, Pd, Mo, Cr, and W, or an alloy containing any of these metals, can be used as the main material of the electrode region 101E.

[0199] The insulation region 101F is made of an insulating material. For example, polyimide can be used as the main material of the insulation region 101F. Also, for example, glass epoxy obtained by impregnating one or more glass fiber cloths with a thermosetting insulating resin such as an epoxy resin and curing the thermosetting insulating resin, a liquid crystal polymer, or the like can be used as the main material of the insulation region 101F. Connector 201

[0200] The connector 201 has an insertion port into which a connector cable is inserted. Thermistor 301

[0201] The thermistor 301 can be used as an element for measuring temperatures. Light-emitting module 901

[0202] In the light-emitting module 901, the first light-emitting device 1A and the second light-emitting device 1B are mounted on the wiring substrate 101. The wiring substrate 101 can be considered as an example of a mounting substrate on which the first light-emitting device 1A and the second light-emitting device 1B are mounted.

[0203] Both the first light-emitting device 1A and the second light-emitting device 1B are placed on the upper surface 101A. Each of the first light-emitting device 1A and the second light-emitting device 1B is connected to the electrode region 101E via an electrically conductive bonding material. Thus, the first light-emitting device 1A and the second light-emitting device 1B are electrically connected to the wiring substrate 101.

[0204] The wiring substrate 101 includes a first connection region 101R1 and a second connection region 101R2, each including the electrode region 101E. The electrode region 101E included in the first connection region 101R1 does not overlap with the electrode region 101E included in the second connection region 101R2.

[0205] In a plan view, the first connection region 101R1 and the second connection region 101R2 have the same shape. Each region has a rectangular shape in a plan view.

[0206] Either the first light-emitting device 1A or the second light-emitting device 1B is placed in the first connection region 101R1. Either the first light-emitting device 1A or the second light-emitting device 1B is placed in the second connection region 101R2. The first light-emitting device 1A may also be placed in either the first connection region 101R1 or the second connection region 101R2. Furthermore, the light-emitting device 1 or the light-emitting device 2 described above may be placed in the first connection region 101R1 or the second connection region 101R2. In the illustrated light-emitting module 901, the first light-emitting device 1A is placed in the first connection region 101R1, and the second light-emitting device 1B is placed in the second connection region 101R2.

[0207] The first connection region 101R1 can be defined as a minimum rectangular region including the electrode region 101E connected to the light-emitting device placed in the first connection region 101R1 via the electrode region 101E divided by the isolation region 101F in a plan view. The second connection region 101R2 can be defined as a minimum rectangular region including the electrode region 101E connected to the light-emitting device placed in the second connection region 101R2 via the electrode region 101E divided by the isolation region 101F in a plan view. The two hatched regions shown in Fig. 18 indicate the first connection region 101R1 and the second connection region 101R2 according to this definition.

[0208] Alternatively, the first connection region 101R1 may be defined as a minimum rectangular region including a region connected to the light-emitting device placed in the first connection region 101R1, and the second connection region 101R2 may be defined as a minimum rectangular region including a region connected to the light-emitting device placed in the second connection region 101R2.

[0209] On the wiring substrate 101, the first connection region 101R1 and the second connection region 101R2 are arranged side by side. The first connection region 101R1 and the second connection region 101R2, which have the same shape, are arranged side by side in one direction and the same orientation.

[0210] In the light-emitting module 901, the first light-emitting device 1A and the second light-emitting device 1B are placed on the wiring substrate 101 such that the first direction is orthogonal to the direction in which the first connection region 101R1 and the second connection region 101R2 are arranged.

[0211] In the light-emitting module 901, the first light-emitting device 1A and the second light-emitting device 1B are oriented 180 degrees different from each other in a plan view. The first light-emitting device 1A is positioned such that the reflective component 40 is located closer to the second light-emitting device 1B than the first semiconductor laser element 20A in the first light-emitting device 1A. The second light-emitting device 1B is positioned such that the reflective component 40 is located closer to the first light-emitting device 1A than the second semiconductor laser element 20B in the second light-emitting device 1B.

[0212] Since the plurality of irradiation points P1 or the plurality of optical axes OA are arranged line-symmetrically around the virtual straight line SL3, partial lights can be aligned and emitted even when the first light-emitting device 1A and the second light-emitting device 1B are oriented 180 degrees apart from each other. That is, whether the first light-emitting device 1A and the second light-emitting device 1B are mounted in the same orientation or facing each other, the light emission position in the X direction can be aligned, thereby reducing deviation in the light-emitting position.

[0213] In this way, in the shape of the light-emitting module in which a plurality of light-emitting devices are mounted on the mounting substrate, even if two semiconductor laser elements included in one light-emitting device have mutually different lengths in the resonator direction, or even if the semiconductor laser elements included in one of the light-emitting devices have a length in the resonator direction that is different from a length in the resonator direction of the semiconductor laser elements included in another light-emitting device, the submounts having the same design can be used in common, respectively.

[0214] Furthermore, the advantage of using the submounts together is not limited to the shape of the light-emitting module, but can be utilized by any user who manufactures or allocates a plurality of light-emitting devices including the first light-emitting device 1A and the second light-emitting device 1B. At this time, the first light-emitting device 1A and the second light-emitting device 1B can be allocated to the same load or allocated to different loads.In addition, the plurality of light-emitting devices manufactured or assigned by the user may include the light-emitting device 1 and the light-emitting device 2, the light-emitting device 1 and the first light-emitting device 1A, the light-emitting device 1 and the second light-emitting device 1B, the light-emitting device 2 and the first light-emitting device 1A, or the light-emitting device 2 and the second light-emitting device 1B.

[0215] Although the embodiments according to the present invention have been described above, the light-emitting device and the light-emitting module according to the present invention are not strictly limited to the light-emitting device or the light-emitting module of the embodiments. In other words, the present invention can be achieved without being limited to the external shape or structure of the light-emitting device or the light-emitting module of the embodiments. The present invention can be applied without requiring that all components be provided. In a case where some of the components of the light-emitting device or the light-emitting module disclosed in the embodiments are not specified in the scope of the claims, the degree of freedom in design, such asSubstitutions, omissions, modifications of form and material changes, for these components, permitted by the person skilled in the art and then specifying that the invention recited within the scope of the claims is applied thereto.

[0216] The light-emitting device and the light-emitting module described in the embodiments can be used in a projector. That is, it can be said that the projector is an application to which the present disclosure is applied. Note that the present disclosure is not limited thereto and can be used in various applications, such as lighting, exposure, vehicle headlights, head-mounted displays, and backlighting of other displays, and the like. QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] JP 2023-164346

[0002]

Claims

[1] A light-emitting device comprising: a plurality of semiconductor laser elements including a first semiconductor laser element and a second semiconductor laser element, each having a light-emitting surface and a first lateral surface opposite to the light-emitting surface, wherein the second semiconductor laser element has a length greater than a length of the first semiconductor laser element in a resonator direction orthogonal to the light-emitting surface of a corresponding one of the first semiconductor laser element and the second semiconductor laser element; a plurality of protective elements including a first protective element and a second protective element; and a plurality of submounts including a first submount and a second submount, wherein the first semiconductor laser element and the first protection element are arranged on the first submount and the second semiconductor laser element and the second protection element are arranged on the second submount, wherein each of the first submount and the second submount includes a mounting surface on which a wiring layer is provided, wherein the wiring layer includes a first region on which a corresponding one of the first semiconductor laser element and the second semiconductor laser element is arranged, and a second region on which a corresponding one of the first protective element and the second protective element is arranged, wherein in a plan view, the first protection element is not placed between a first virtual straight line and a second virtual straight line, the first virtual straight line passing through the light-emitting surface of the first semiconductor laser element and being parallel thereto, and the second virtual straight line passing through the first lateral surface of the first semiconductor laser element and being parallel thereto, in plan view, part or all of the second protection element is placed between a third virtual straight line and a fourth virtual straight line, the third virtual straight line passing through the light-emitting surface of the second semiconductor laser element and being parallel thereto, and the fourth virtual straight line passing through the first lateral surface of the second semiconductor laser element and being parallel thereto, in plan view, a center of a width of the light-emitting surface of the first semiconductor laser element does not coincide with a center of a width of the first submount in a direction parallel to the light-emitting surface of the first semiconductor laser element, and in plan view, a center of a width of the light-emitting surface of the second semiconductor laser element does not coincide with a center of a width of the second submount in a direction parallel to the light-emitting surface of the second semiconductor laser element. [2] The light-emitting device according to claim 1, wherein the fourth virtual straight line in plan view passes through the second protection member. [3] A light-emitting device according to claim 1 or 2, wherein a length of the first submount is greater than a sum of a length of the first semiconductor laser element and a length of the first protective element in the resonator direction in plan view, and a length of the second submount is smaller than a sum of a length of the second semiconductor laser element and a length of the second protection element in the resonator direction in plan view. [4] A light-emitting device according to any one of claims 1 to 3, wherein the center of the width of the light-emitting surface of the first semiconductor laser element is separated from the center of the width of the first submount by a range of 10 µm to 200 µm in the direction parallel to the light-emitting surface of the first semiconductor laser element in plan view, and the center of the width of the light-emitting surface of the second semiconductor laser element is separated from the center of the width of the second submount by a range of 10 µm to 200 µm in the direction parallel to the light-emitting surface of the second semiconductor laser element in plan view. [5] A light-emitting device according to any one of claims 1 to 4, wherein the plurality of semiconductor laser elements are each arranged on the plurality of submounts, and the plurality of submounts are arranged side by side such that an interval between adjacent ones of the plurality of submounts is 300 µm or less. [6] A light-emitting device according to any one of claims 1 to 5, further comprising a base having a first upper surface, a second upper surface located above the first upper surface, and a plurality of inner lateral surfaces located between the first upper surface and the second upper surface, wherein the plurality of submounts are arranged side by side in a first direction on the first upper surface, the plurality of inner lateral surfaces includes a first inner lateral surface and a second inner lateral surface facing each other in the first direction, and in the plan view in the first direction, a distance from the first inner lateral surface to one of the plurality of submounts arranged at a position closest to the first inner lateral surface is different from a distance from the second inner lateral surface to one of the plurality of submounts arranged at a position closest to the second inner lateral surface. [7] A light-emitting device according to any one of claims 1 to 6, further comprising: one or more reflective components configured to reflect light emitted by the plurality of semiconductor laser elements; and a base having a first upper surface on which the plurality of submounts and the one or more reflective components are placed, wherein the plurality of submounts are arranged side by side in the first direction on the first upper surface, and in the plan view in the first direction, a distance from a center point between both ends of the base in the first direction to a center point between both ends of the one or more reflective members in the first direction is smaller than the distance from the center point between both ends of the base in the first direction to a center point between both ends of the plurality of submounts in the first direction. [8] A light-emitting device according to claim 7, wherein Light emitted from the plurality of semiconductor laser elements is formed by a plurality of partial lights emitted from the plurality of semiconductor laser elements, and a plurality of points at which the one or more reflecting members are irradiated with light traveling along an optical axis of each of the plurality of partial lights are arranged line-symmetrically in the first direction about a virtual straight line passing through the midpoint between both ends of the base in the first direction and being orthogonal to the first direction in plan view. [9] Light-emitting module comprising: a first light-emitting device comprising a plurality of first semiconductor laser elements each having a light-emitting surface and a first lateral surface opposite the light-emitting surface, a plurality of first protective elements, and a plurality of first submounts each including a first mounting surface on which a first wiring layer is provided, the first wiring layer including a first region and a second region, the first region being a region on which a corresponding one of the first semiconductor laser elements is arranged, and the second region being a region on which a corresponding one of the first protection elements is arranged; a second light-emitting device comprising a plurality of second semiconductor laser elements each having a light-emitting surface and a second lateral surface opposite the light-emitting surface, a plurality of second protective elements, and a plurality of second submounts each including a second mounting surface on which a second wiring layer is provided, the second wiring layer including a first region and a second region, the first region being a region on which a corresponding one of the second semiconductor laser elements is arranged, and the second region being a region on which a corresponding one of the second protection elements is arranged; and a mounting substrate on which the first light-emitting device and the second light-emitting device are mounted, wherein a shape of the first wiring layer of each of the first submounts, viewed from a direction orthogonal to the first mounting surface, is identical to a shape of the second wiring layer of each of the second submounts, viewed from a direction orthogonal to the second mounting surface, in a plan view, each of the first protection elements is not placed between a first virtual straight line and a second virtual straight line, the first virtual straight line passing through the light-emitting surface of a corresponding one of the first semiconductor laser elements and being parallel thereto, and the second virtual straight line passing through the first lateral surface of the corresponding one of the first semiconductor laser elements and being parallel thereto, in plan view, a part or all of each of the second protection elements is placed between a third virtual straight line and a fourth virtual straight line, the first virtual straight line passing through and being parallel to the light-emitting surface of a corresponding one of the second semiconductor laser elements, and the fourth virtual straight line passing through and being parallel to the first lateral surface of the corresponding one of the second semiconductor laser elements, in plan view, a center of a width of the light-emitting surface of each of the first semiconductor laser elements does not coincide with a center of a width of a corresponding one of the first submounts in a direction parallel to the light-emitting surface of each of the first semiconductor laser elements, and in plan view, a center of a width of the light-emitting surface of each of the second semiconductor laser elements does not coincide with a center of a width of a corresponding one of the second submounts in a direction parallel to the light-emitting surface of each of the second semiconductor laser elements. [10] A light-emitting module according to claim 9, wherein in plan view, the center of the width of the light-emitting surface of each of the first semiconductor laser elements is separated from the center of the width of a corresponding one of the first submounts by a range of 10 µm to 200 µm in a direction parallel to the light-emitting surface of each of the first semiconductor laser elements, and in plan view, the center of the width of the light-emitting surface of each of the second semiconductor laser elements is separated from the center of the width of a corresponding one of the second submounts by a range of 10 µm to 200 µm in a direction parallel to the light-emitting surface of each of the second semiconductor laser elements. [11] Light-emitting module according to claim 9 or 10, wherein the first submounts are arranged next to each other such that an interval between adjacent ones of the first submounts is 300 µm or less, and the second submounts are arranged next to each other such that an interval between adjacent ones of the second submounts is 300 µm or less. [12] A plurality of light-emitting devices comprising: a first light-emitting device comprising a plurality of first semiconductor laser elements each having a light-emitting surface and a first lateral surface opposite the light-emitting surface, a plurality of first protective elements, and a plurality of first submounts each including a first mounting surface on which a first wiring layer is provided, the first wiring layer including a first region and a second region, the first region being a region on which a corresponding one of the first semiconductor laser elements is arranged, and the second region being a region on which a corresponding one of the first protection elements is arranged; and a second light-emitting device comprising a plurality of second semiconductor laser elements each having a light-emitting surface and a second lateral surface opposite the light-emitting surface, a plurality of second protective elements, and a plurality of second submounts each including a second mounting surface on which a second wiring layer is provided, wherein the second wiring layer includes a first region and a second region, wherein the first region is a region on which a corresponding one of the second semiconductor laser elements is arranged, and the second region is a region on which a corresponding one of the second protection elements is arranged; wherein a shape of the first wiring layer of each of the first submounts, viewed from a direction orthogonal to the first mounting surface, is identical to a shape of the second wiring layer of each of the second submounts, viewed from a direction orthogonal to the second mounting surface, in a plan view, each of the first protection elements is not placed between a first virtual straight line and a second virtual straight line, the first virtual straight line passing through the light-emitting surface of a corresponding one of the first semiconductor laser elements and being parallel thereto, and the second virtual straight line passing through the first lateral surface of the corresponding one of the first semiconductor laser elements and being parallel thereto, in plan view, part or all of each of the second protection elements is placed between a third virtual straight line and a fourth straight line, the third straight line passing through and being parallel to the light-emitting surface of a corresponding one of the second semiconductor laser elements, and the fourth virtual straight line passing through and being parallel to the first lateral surface of the corresponding one of the second semiconductor laser elements, in plan view, a center of a width of the light-emitting surface of each of the first semiconductor laser elements does not coincide with a center of a width of a corresponding one of the first submounts in a direction parallel to the light-emitting surface of each of the first semiconductor laser elements, and in plan view, a center of a width of the light-emitting surface of each of the second semiconductor laser elements does not coincide with a center of a width of a corresponding one of the second submounts in a direction parallel to the light-emitting surface of each of the second semiconductor laser elements. [13] A plurality of light-emitting devices according to claim 12, wherein in plan view, the center of the width of the light-emitting surface of each of the first semiconductor laser elements is separated from the center of the width of the corresponding one of the first submounts by a range of 10 µm to 200 µm in a direction parallel to the light-emitting surface of each of the first semiconductor laser elements, and in plan view, the center of the width of the light-emitting surface of each of the second semiconductor laser elements is separated from the center of the width of the corresponding one of the second submounts by a range of 10 µm to 200 µm in a direction parallel to the light-emitting surface of each of the second semiconductor laser elements. [14] A plurality of light-emitting devices according to claim 12 or 13, wherein the first submounts are arranged next to each other such that an interval between adjacent ones of the first submounts is 300 µm or less, and the second submounts are arranged next to each other such that an interval between adjacent ones of the second submounts is 300 µm or less. [15] A plurality of light-emitting devices according to any one of claims 12 to 14, wherein the first light-emitting device and the second light-emitting device are associated with an identical load or different loads.

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