Power module with a carrier substrate and an electrical insulation layer

Abstract

Power module (12) with a circuit carrier comprising a carrier substrate and an electrical insulation layer, wherein the circuit carrier has a first conductor structure with an external contact region and at least one second conductor structure with at least one external contact region and a further, third conductor structure which comprises at least one external contact region, with semiconductor components (42) arranged individually or in groups, characterized in that a multifunctional frame is assigned to the power module (12), wherein the power module (12) is connected to the multifunctional frame, wherein the groups of semiconductor components (42) are arranged in a first plane (60) which is spatially separated from a second plane (62) in the multifunctional frame, wherein the semiconductor components (42) are electrically connected to one another by a first sintered connection (130) with the introduction of at least one first spacer (100.1).

Description

Technical area

[0001] The invention relates to a power module with a circuit carrier comprising a carrier substrate and an electrical insulation layer. The circuit carrier has a first conductor structure with an external contact area, at least one second conductor structure with at least one external contact area, and a further, third conductor structure comprising at least one external contact area. State of the art

[0002] From DE 11 2017 004 390 T5 a power module is known which has the following features: an insulating substrate having a front side to which a power semiconductor element is attached; a base plate connected to a back side of the insulating substrate; a housing attached to the base plate and surrounding the insulating substrate; a cover attached to the housing and forming a sealed area; and a silicone gel serving as a filling element which fills the entire sealed area and has an internal stress acting as a compressive stress.

[0003] DE 10 2014 219 998 B4 discloses a power module, in particular for providing a phase current for an electric motor. The power module comprises a circuit carrier with a surface, at least two first contact surfaces on the surface, and at least two first power transistors, each of which has a ground contact surface. A first power transistor of the at least two first power transistors is arranged directly on one of the first contact surfaces and is electrically conductively connected to the respective first contact surface via its ground contact surface. In addition, the power module comprises a second contact surface on the surface and at least two second power transistors, each of which has a ground contact surface.The at least two second power transistors are arranged directly on the second contact surface and are electrically connected directly to the second contact surface via their respective ground contact surfaces. Furthermore, the power module comprises at least two third contact surfaces on the surface, wherein the at least two second power transistors each have a further contact surface on their sides facing away from the surface of the circuit carrier, and a second power transistor of the at least two second power transistors is electrically connected to one of the at least two third contact surfaces via its further contact surface.The at least two first contact surfaces and the at least two third contact surfaces are arranged alternately one after the other in a longitudinal direction of the power module, and the second contact surface is arranged next to the at least two first contact surfaces and the at least two third contact surfaces, the second contact surface having at least two contact regions, one of the at least two contact regions being located next to each of the at least two first power transistors. The at least two first power transistors each have a further contact surface on their sides facing away from the surface of the circuit carrier, and a first power transistor of the at least two first power transistors is electrically conductively connected via its further contact surface to the respective contact region of the at least two contact regions of the second contact surface located next to it.Here, the at least two contact regions of the second contact surface and the at least two second power transistors are arranged alternately one after the other in the longitudinal direction.

[0004] EP 2 418 925 B1 discloses an electrical contact between a flexible foil having at least one conductor track and at least one electrical contact of a sensor or control device. An end section of the flexible foil is electrically contacted at a contact point by heat input, with the end section of the flexible foil being positioned against protruding electrical contacts at the contact point. The end section of the flexible foil is designed as a waveguide, in particular as a deflection element. Disclosure of the invention

[0005] According to the invention, a power module is proposed with a circuit carrier which comprises a carrier substrate and an electrical insulation layer, wherein the circuit carrier has a first conductor structure with an external contact region and at least one second conductor structure with at least one external contact region and a further, third conductor structure which comprises at least one external contact region, with semiconductor components arranged individually or in groups, wherein a multifunctional frame is assigned to the power module, wherein the power module is connected to the multifunctional frame, wherein the groups of semiconductor components are arranged in a first plane which is spatially separated from a second plane in the multifunctional frame, wherein the semiconductor components are electrically connected to one another by a first sintered connection with the introduction of at least one first spacer.

[0006] An efficient electrical connection between semiconductor components can be achieved by the first sintered connection proposed by the invention. In this context, the first sintered connection is characterized, for example, by efficient heat dissipation and optimal current-carrying capacity, which leads to efficient power transmission while avoiding excessive heating of the electrical connection.

[0007] The design of the power module proposed according to the invention provides that at least one spacer is arranged between a bottom side of the multifunctional frame and a top side of the power module in the region of a joint. With the help of the at least one spacer, which is provided within the at least one first sintered joint, it is possible to compensate for design or manufacturing tolerances.

[0008] In a further advantageous embodiment of the power module proposed according to the invention, the semiconductor components are arranged individually or in groups on a base of the power module.

[0009] In a further advantageous embodiment of the power module proposed according to the invention, the spacer is arranged in the region of a joint between a bottom side of the multifunctional frame and a top side of the power module.

[0010] In a further advantageous embodiment of the power module proposed according to the invention, the first sintered connection has a first, a second and a third sintered layer.

[0011] In a further advantageous embodiment of the power module proposed according to the invention, the power module has a second sintered connection.

[0012] In a further advantageous embodiment of the power module proposed according to the invention, the second sintered connection has a fourth and a fifth sintered layer.

[0013] In a further advantageous embodiment of the power module proposed according to the invention, the power module is connected to a cooling surface via a third sintered connection, a soldered connection or an adhesive connection.

[0014] In a further advantageous embodiment of the power module proposed according to the invention, the multifunctional frame is arranged above or below the power module as seen in the Z direction.

[0015] In a further advantageous embodiment of the power module proposed according to the invention, current-carrying components, in particular a T+ bridge and a T- bridge, are formed one above the other or next to each other in the multifunctional frame in such a way that a low-inductive connection is formed.

[0016] In a further advantageous embodiment of the power module proposed according to the invention, a populated multifunctional frame enclosed by a molding compound has one or more access openings.

[0017] A populated multifunctional frame is understood within the meaning of the invention to be a structural unit that has a plurality of electronic, mechanical, or other functional components in order to fulfill multiple tasks or functions in a system in conjunction with the power module. Such a populated multifunctional frame can, for example, be suitable for a variety of applications. This includes a selection of components that are mounted and secured on the frame to enable multifunctional performance. The multifunctional performance refers to a system, a technological application, or a device with which several different functions or tasks are fulfilled in a single, multifunctionally equipped frame, namely a populated multifunctional frame.

[0018] In a further advantageous embodiment of the power module proposed according to the invention, a populated power module, which is enclosed by a molding compound, has one or more access openings.

[0019] A populated power module, for example, is a power module that includes all components, such as circuit boards or substrates, on which a variety of electronic components are positioned and mounted. These components can include, for example, resistors, capacitors, transistors, integrated circuits, and other components required to achieve a specific performance or function according to the requirements of the power module's electronic system.

[0020] The molding compound surrounding the semiconductor components in particular can effectively improve their protection against environmental influences such as temperature, vibration, liquid wetting and the like. Advantages of the invention

[0021] The embodiment of a power module with a first sintered bond proposed according to the invention enables an efficient electrical connection between the semiconductor components. The first sintered bond is characterized, for example, by efficient heat dissipation and optimal current-carrying capacity, which leads to efficient power transmission by preventing excessive heating of the electrical connection. Furthermore, the embodiment of the power module with a first sintered bond proposed according to the invention enables a compact design of the power module, in contrast to the prior art, because the sintered bond of electronic components enables targeted placement and integration of components, such as semiconductor components, while simultaneously reducing the installation space.Furthermore, the sintered joint is characterized by its strength and robustness against thermomechanical fluctuations, vibrations, and other environmental influences. Furthermore, the electrical connection according to the invention, namely the first sintered joint, can create an optimized cooling structure, enabling, for example, optimal cooling of semiconductor components. Furthermore, the first sintered joint has a higher operating temperature resistance than, for example, a soldered joint, which allows for efficient use of power modules in power electronics in high-temperature environments.In addition, the first sintered connection is characterized by a reduced risk of failure of typical defects such as cracks or cold solder joints compared to a soldered connection, as well as by improved long-term stability, through which an electrical property of the connection remains constant over a longer period of time, whereby a higher reliability and service life of the power module is advantageously achieved by a first sintered connection of the electrical connection.

[0022] Advantageously, with the solution according to the invention, the external contact areas of the power module can be relocated into a multifunctional frame arranged offset from the latter in the Z direction. According to the solution according to the invention, the underside of the power module can advantageously be connected to the top side of a cooling surface either by a flat sintered connection, a flat soldered connection, or a flat adhesive connection. All design variants have the advantage of a flat contact connection, which allows the heat dissipation occurring during the operating state of the semiconductor components of the power module to be reliably dissipated, thus preventing thermal overload of the power module. Short description of the drawings

[0023] Embodiments of the invention are explained in more detail with reference to the drawings and the following description.

[0024] They show: Fig. 1 a plan view of a first circuit carrier of a power module comprising a carrier substrate and a possible arrangement of semiconductor components, Fig. 2 a plan view of a power module with separate cooling and layout areas with laterally arranged areas for press-in pins, Fig. 3 an arrangement of a power module mounted on a cooling surface and a multifunctional frame arranged over it in the Z direction, Fig. 4 a plan view of the arrangement of the components incorporated in the multifunctional frame, Fig. 5 an enlarged view of the first sintered joint and Fig. 6 an enlarged view of the second sintered joint. Embodiments of the invention

[0025] In the following description of the embodiments of the invention, identical or similar elements are designated by the same reference numerals, whereby a repeated description of these elements is omitted in individual cases. The figures only schematically illustrate the subject matter of the invention.

[0026] Fig. 1 shows a plan view of a power module 12, in particular of its circuit carrier 14.

[0027] The top view according to Fig. 1 shows that a carrier substrate 40 of the circuit carrier 14 is provided with a number of conductor structures 18, 20A, 20B, 22. The circuit carrier 14 extends in an X, Y plane 10, wherein the circuit carrier 14 is formed with an electrical insulation layer 16. A first conductor structure 18, which has an external contact region 18.2, is located thereon, separated from one another by channel-shaped interruptions. Furthermore, second conductor structures 20A, 20B are located opposite one another on the first circuit carrier 14, symmetrically to a central longitudinal axis 24 of the power module 12. Each of the two second conductor structures 20A, 20B comprises an external contact region 20A.2, 20B.2. Finally, a third conductor structure 22 is applied to the circuit carrier 14 or to its electrical insulation layer 16, which has at least one external contact area 22.2.

[0028] The aforementioned conductor structures 18, 20A, 20B, 22 are electrically separated from one another and applied to the circuit carrier 14 essentially symmetrically to the central longitudinal axis 24. An active area is designated by position 36, and a surrounding layout area for conducting current is designated by reference numeral 38. AMB (Active Metal Brazing, (OFC (Oxygen-free Copper) / Si3N4 / OFC)) is advantageously selected as the carrier substrate 40 of the circuit carrier 14.

[0029] The representation according to Fig. Figure 2 shows a top view of the power module 12. In this schematic representation, semiconductor components 42 are arranged on active surfaces 36, which may be, for example, transistors, MOSFETs, IGBTs, diodes, or other semiconductor components that can be used as semiconductor switches. Fig. 2 shows that a first group 64 of semiconductor components 42 is accommodated on the active areas 36. The individual semiconductor components 42 can be designed, for example, as MOSFETs and have control terminals 34 on their outer sides, via which a control (not shown in detail) of the individual semiconductor components 42 of the first group 64 of semiconductor components 42 can take place. Analogous to the first group 64, a second group 66 of semiconductor components 42 is arranged, which can also be MOSFETs, with control terminals 34 formed on their outer region. An arrangement of the semiconductor components 42 in groups 64, 66 is not absolutely necessary; depending on the scaling, they can also be arranged individually, i.e., not in groups.The semiconductor components 42 of the second group 66 of semiconductor components can be controlled externally via the control connections 34, which is shown in the illustration according to . Fig. 2 is not shown in detail.

[0030] Furthermore, the plan view according to Fig. 2 shows that in the Fig. 2, areas are provided on the long sides of the circuit carrier 14 in the form of a carrier substrate 40, in which press-in pins 76 - 94 are inserted into the plane of the drawing according to Fig. 2 protrude. Specifically, these are first and second press-in pins 76, 78, third and fourth press-in pins 80, 82, and, arranged opposite one another, fifth and sixth press-in pins 84, 86. In the area of ​​the opposite end face of the circuit carrier 14, seventh and eighth press-in pins 88, 90 are provided, as well as ninth and tenth press-in pins 92, 94.

[0031] The side view according to Fig. 3 shows that a power module 12, shown here from the outside, is mounted with its underside 120 on a cooling surface 106. Viewed in the Z-direction 54, a multifunctional frame 50 is located above the power module 12. On the top side of the Fig. 3 of the multifunction frame 50 shown from the side, the individual press-in pins 76, 78, 80, 82, 84, 86, 88, 90, 92, 94 – here lying in the same plane of the drawing – protrude vertically upwards. The components arranged within the multifunction frame 50 or the power module 12 arranged below it can be electrically contacted in a robust and simple manner via the press-in pins 76 to 94. From the illustration according to Fig. 3 further shows that the multifunctional frame 50 forms a first level 60, while the power module 12 arranged underneath in this case forms a second level 62. Likewise, the multifunctional frame 50 could, in a modification of the illustration according to Fig. 3, viewed in the Z direction 54, may be arranged above the power module 12. Furthermore, the multifunctional frame 50 may, for example, be a populated multifunctional frame 56 and the power module 12 may be a populated power module 58.

[0032] According to Fig. 4, a T+ bridge 134 (first contact surface 68) is accommodated in the multifunctional frame 50 above the power module 12. The press-in pins 76, 78, 80, 84 surrounding the T+ bridge 134 are arranged such that they electrically contact semiconductor components 42 arranged individually or in groups 64, 66 below the T+ bridge 134, preferably on a base 96 of the power module 12. The semiconductor components 42 arranged on the base 96 of the power module 12 are semiconductor components 42, such as MOSFETs, IGBTs, and diodes, which serve, for example, as semiconductor switches.

[0033] In the order pursuant to Fig. 4, for example, a T-bridge 138 (second contact surface 70) shown in plan view is electrically contacted via press-in pins 88, 90 directly connected to it. In the area of ​​the T-bridge 138 (second contact surface 70) as shown in Fig. 4, ninth and tenth press-in pins 92, 94 are also provided, via which semiconductor components 42 arranged individually or in groups 64, 66 below the T-bridge 138 (second contact surface 70) can be electrically contacted. Fig. 4 also shows the contact strips 142 extending downwards from the T+ bridge 134. In Fig. 5 there are compensation openings 148 in the phase bridge 136 and in the T- bridge 138.

[0034] Fig. 5 shows an enlarged view of the first sintered connection 130.

[0035] The Fig. The first sintered connection 130 shown in Figure 5 has a first sintered layer 122, with which a semiconductor component 42 is connected to the base 96 of the power module 12. Furthermore, the first sintered connection 130 has a second sintered layer 124, with which the semiconductor component 42 is connected to a first spacer 100.1, and a third sintered layer 126, which connects the first spacer 100.1 to a contact strip 142 of the multifunctional frame 50, so that the heat of the contact strips 142 can be dissipated through the base 96 to the cooling surface 106 via the third sintered connection 133 or the solder connection 110 or the adhesive connection 114. Fig. The first sintered connection 130 shown in Figure 5 advantageously ensures efficient heat dissipation and electrical reliability. For example, the first, second, and third sintered layers 122, 124, 126 of the first sintered connection 130 are formed using conductive metal powders as the sintered material, such as silver or copper. Excellent electrical conductivity and thermal conductivity are achieved by the first sintered connection 130 according to the invention with the electrically conductive material. For example, the first, second, and third sintered layers 122, 124, 126 of the first sintered connection 130 can be applied by applying the electrically conductive metal powder to a surface of the components of the power module 12 or the multifunction frame 50 to be connected to one another.Furthermore, for example, by controlled heating to a suitable temperature, sintered particles of the sintered material, namely metal powder, can be fused with each other and with the surfaces, creating a solid and thermal bond.

[0036] The Fig. The connection of the base 96 of the power module 12 to the cooling surface 106 shown in Figure 5 can be variably made by a solder connection 110, an adhesive connection 114, or a third sintered connection 133. All connections of the base 96 of the power module 12 to the cooling surface 106 are characterized by efficient thermal conductivity of the heat dissipated by the base 96 of the power module 12 from the contact strip 142. These connection options also offer optimal adaptation to the tolerances of the surface of the power module 12 to be contacted with a cooling surface 106, since a uniform, flat contact is ensured by the Fig. 6 connection options shown

[0037] Fig. 6 shows an enlarged view of the second sintered connection 132.

[0038] The Fig. The second sintered connection 132 shown in Figure 6 comprises the fifth sintered layer 129, with which a second spacer 100.2 is connected to the underside of the phase bridge 136, and the fourth sintered layer 128, with which the second spacer 100.2 is connected to the base 96 of the power module 12. The second spacer 100.2 is located on the base 96 of the power module 12, so that the heat of the phase bridge 136 can be dissipated through the base 96 via the third sintered connection 133, or the solder connection 110 or adhesive connection 114, to the cooling surface 106.

[0039] Through the Fig. The second sintered connection 132 shown in Figure 6 advantageously ensures efficient heat dissipation and electrical reliability. For example, the fourth and fifth sintered layers 128, 129 of the second sintered connection 132 are formed using conductive metal powders as the sintered material, such as silver or copper. Excellent electrical conductivity and thermal conductivity are achieved by the second sintered connection 132 according to the invention with the electrically conductive material. For example, the fourth and fifth sintered layers 128, 129 of the second sintered connection 132 can be applied by applying the electrically conductive metal powder to a surface of the components of the power module 12 or the multifunction frame 50 to be connected to one another, such as the phase bridge 136 and the first spacer 100.1 forming the fourth sintered layer 128.Furthermore, for example, by controlled heating to a suitable temperature, sintered particles of the sintered material, namely metal powder, can be fused with each other and with the surfaces, creating a solid and thermal bond.

[0040] The Fig. The connection of the base 96 of the power module 12 to the cooling surface 106 shown in Figure 6 can be variably made by a solder connection 110, an adhesive connection 114 or a third sintered connection 133. All connections of the base 96 of the power module 12 to the cooling surface 106 are characterized by efficient thermal conductivity of the heat of the phase bridge 136 dissipated through the base 96 of the power module 12. These connection options also offer optimal adaptation to the tolerances of the surface of the power module 12 to be contacted with a cooling surface 106, since a uniform surface contact is ensured by the Fig.6 connection options are given.

[0041] The invention is not limited to the embodiments described here and the aspects highlighted therein. Rather, numerous modifications are possible within the scope of the claims, which are within the scope of one skilled in the art. QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] DE 11 2017 004 390 T5

[0002] DE 10 2014 219 998 B4

[0003] EP 2 418 925 B1

[0004]

Claims

[1] Power module (12) with a circuit carrier (14) comprising a carrier substrate (40) and an electrical insulation layer (16), wherein the circuit carrier (14) has a first conductor structure (18) with an external contact area (18.2) and at least one second conductor structure (20A, 20B) with at least one external contact area (20A.2, 20B.2) and a further, third conductor structure (22) comprising at least one external contact area (22.2), with semiconductor components (42) arranged individually or in groups (64, 66), characterized byin that a multifunctional frame (50) is assigned to the power module (12), wherein the power module (12) is connected to the multifunctional frame (50), wherein the groups (64, 66) of semiconductor components (42) are arranged in a first plane (60) which is spatially separated from a second plane (62) in the multifunctional frame (50), wherein the semiconductor components (42) are electrically connected to one another by a first sintered connection (130) with the introduction of at least one first spacer (100.1). [2] Power module (12) according to claim 1, characterized by that the semiconductor components (42) are arranged individually or in groups (64, 66) on a base (96) of the power module (12). [3] Power module (12) according to claims 1 to 2, characterized by that the spacer (100) is arranged in the region of a joint (98) between a bottom side of the multifunctional frame (50) and a top side of the power module (12). [4] Power module (12) according to claims 1 to 3, characterized by that the first sintered connection (130) has a first, a second and a third sintered layer (122, 124, 126). [5] Power module (12) according to claims 1 to 4, characterized by that the power module (12) has a second sintered connection (132). [6] Power module (12) according to claims 1 to 5, characterized by that the second sintered connection (132) has a fourth and a fifth sintered layer (128, 129). [7] Power module (12) according to claims 1 to 6, characterized by that the power module (12) is connected to a cooling surface (106) via a third sintered connection (133), a soldered connection (110) or an adhesive connection (114). [8] Power module (12) according to claims 1 to 7, characterized by that the multifunctional frame (50) is arranged above or below the power module (12) as seen in the Z direction (54). [9] Power module (12) according to claims 1 to 8, characterized by that current-carrying components, in particular a T+ bridge (134) and a T- bridge (138) are formed one above the other or next to the other in the multifunctional frame (50) in such a way that a low-inductive connection is formed. [10] Power module (12) according to claims 1 to 9, characterized by that a loaded multifunctional frame (56) is enclosed by a molding compound (108) which has one or more access openings. [11] Power module (12) according to claims 1 to 10, characterized by that a populated power module (58) is enclosed by a molding compound (108) which has one or more access openings.

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