Simplifying the isolation of a temperature sensor by assigning the signal electrically to a high-side driver and physically to a low-side transistor.

Abstract

A power semiconductor circuit is equipped with a first driver circuit (HT) and a first semiconductor switch (HS) controlled by the HT, which is connected to a first reference potential (HV+). A second driver circuit (LT) and a second semiconductor switch (LS) controlled by the LT are provided, which is connected to a second reference potential (HV-). The first and second semiconductor switches (LS) are connected in series. A temperature sensor (T) is also provided, which is galvanically connected to a temperature input (T1, T2) of the first driver circuit (HT) and is located on the second semiconductor switch (LS) and is thermally connected to it. A corresponding power converter is also described.

Description

Vehicles with an electric drive have an accumulator to supply a traction inverter with direct voltage. In conventional power classes of 100-200 kW and also in higher power classes, the use of high voltages of more than 60 V is required for representing this power, in particular of typically 400 V or 800 V. For protection against dangerous touch voltages, special insulation measures are therefore required. In addition, even with high efficiency, the inverter generates a power loss which drops in the form of heat at the semiconductor switches of the inverter. In the power classes mentioned, temperature monitoring of the semiconductor switches (power semiconductors) of the inverter is therefore necessary.In order to reduce errors in the temperature monitoring, which arise in particular due to thermal resistances between the temperature sensor and the heat source, it is therefore an approach to attach the temperature sensor as close as possible to the heat source, i.e. to the semiconductor switch. However, complex isolation measures are obtained when deriving the signal of the temperature sensor by signal lines in order to avoid the signal lines passing on a dangerous potential to circuit sections that are not correspondingly isolated. The document DE 10 2018 212 472 A1 describes a power circuit in which a thermistor is arranged on a switching device or on a current path in the vicinity thereof. Specifics for voltage-range-wide data transmission are not mentioned.An accurate temperature measurement by a small distance between temperature sensor and semiconductor switch is thus associated with a high level of insulation complexity (which may itself lead to a temperature error), while a greater distance between temperature sensor and semiconductor switch, for example for the realization of insulation measures, leads to relevant measurement errors in the temperature monitoring, particularly in the case of severe temperature changes at the heat source. It is therefore an object of the invention to show a possibility with which sufficiently precise temperature detection in power semiconductor circuits can be achieved in a simple manner.This object is achieved by the subject matters of the independent claims. Further characteristics, features, embodiments and advantages are evident with the dependent claims, the description and the figure.It is proposed that in a power semiconductor circuit having a first and a second semiconductor switch which are connected to different reference potentials, a temperature sensor for signal dissipation is electrically connected to a first driver circuit of the first semiconductor switch, and is arranged on the second semiconductor switch (i.e. another semiconductor switch) for temperature detection. In other words, it is proposed to assign the temperature sensor to the second semiconductor switch (which relates to the second reference potential) in a spatially, physically or heat-transferring manner, while the signal derivation of the temperature sensor takes place via the driver circuit of the first semiconductor switch (i.e. of the other semiconductor switch). This results in a precise temperature detection without having to rely on cost-intensive electrically insulated sensors or else a complicated galvanic isolation of an uninsulated temperature sensor.There is a heat-transfer (and optionally also electrically conductive) connection between temperature sensor and second power semiconductor (connected to the second reference potential) and a signal-transmitting (galvanically non-insulating) connection between temperature sensor and the driver circuit of the first semiconductor switch. This driver circuit is assigned to the first reference potential (since it controls the first semiconductor switch which is connected to the first reference potential). One general approach is to assign the temperature sensor with regard to monitoring and heat conduction to a component (second semiconductor switch) which is assigned a different supply potential than the component (first driver circuit) to which the temperature sensor is connected for signal transmission.Since the reference potential of the first driver circuit corresponds to the reference potential of the first semiconductor switch driven by it and, in particular, the reference potential of the first driver circuit corresponds to the upper potential of the second semiconductor switch, there is no potential difference between the reference potential of the first driver circuit and regions of the second semiconductor switch. This relates in particular to regions of the second semiconductor switch which are connected to the first semiconductor switch and which thus have the upper potential of the second semiconductor switch. As a result, the insulation requirements for the temperature sensor are greatly simplified compared to the second semiconductor switch, or no insulation is required for the temperature sensor, even in high-voltage applications.A power semiconductor circuit having a first and second semiconductor switch is therefore proposed. The semiconductor switches are connected in series (preferably directly or via a galvanically conductive connection). The first semiconductor switch is connected to a first supply potential, while the second semiconductor switch is connected to a second supply potential. The supply potentials are DC voltage potentials. In particular, a first terminal of the first semiconductor switch is connected to the first supply potential, and a first terminal of the second semiconductor switch is connected to the second supply potential. These terminals are part of the power path of the respective semiconductor switch. These terminals are also referred to as external terminals. The first and second semiconductor switches each have a second terminal opposite the respective first terminal. The second terminals are connected to one another, resulting in the series connection of the two semiconductor switches. The second terminals are also part of the power path of the respective semiconductor switch. In particular, the switchable part of the power path of the first or second semiconductor switch leads from the first to the second terminal. The second terminals may also be referred to as inner terminals.The second semiconductor switch is driven by a second driver circuit. The reference potential of the first driver circuit substantially corresponds to the reference potential of the second (inner) terminal of the first semiconductor switch. The reference potential of the second driver circuit substantially corresponds to the reference potential of the first terminal (outer) of the second semiconductor switch. The two driver circuits thus have different reference potentials.The power semiconductor circuit has a temperature sensor which comprises electrically conductive elements. The temperature sensor can be designed as an NTC resistor, a PTC resistor (i.e. as a cold or thermistor), as a thermocouple, as a temperature-dependent semiconductor element (diode and the like), as a temperature sensor with temperature-dependent oscillation or magnetic properties, as a mechanical temperature switch, or generally as a non-optical temperature sensor (elements with temperature-dependent resistance) or as a non-optical temperature element. The temperature sensor has a signal output which is conductively (galvanically non-isolating) connected to the temperature-sensing surface or to the temperature-sensing body / element of the sensor. The temperature sensor is connected to the first driver circuit via at least one of these signal outputs or contacts. This connection is galvanically conductive, i.e. galvanically non-insulating. In the case of a temperature sensor with a temperature-dependent resistance value or a temperature element with a temperature-dependent current or temperature-dependent voltage, the temperature sensor has (at least) two potentials, wherein preferably one of these is connected to the first driver circuit. In this case, the temperature sensor can be connected in particular to an A / D converter input of the first driver circuit or to another input for analog signals of the first driver circuit. The connection can comprise a resistor and the like, optionally also filter elements, but in particular no galvanic isolation, which would isolate the driver circuit from the temperature sensor.The temperature sensor is connected to the first driver circuit via a temperature input. The temperature input has (at least) two potentials, at least one of which is connected in a galvanically connecting manner to at least one potential of the temperature sensor. The potentials can be embodied as contacts and / or as sections of a conductor track or also as sections of a bonding connection, soldered connection, sintered connection, plug connection or the like.The temperature sensor may have a protective layer which is electrically insulated, and this may also apply to the heat-transferring connector or to a heat paste layer. However, no particular conditions are associated with the electrical insulation properties of the protective layer and it is in particular not necessary to configure the insulation properties such that they satisfy the voltage between the potentials of the circuit.The temperature sensor is arranged in particular on a section of the semiconductor switch which is electrically conductive and which substantially has the reference potential of the first driver circuit.The semiconductor switch can be mounted (electrically conductive) on an electrically conductive surface (for example a conductor track section), wherein the temperature sensor can likewise be mounted on this electrically conductive surface, preferably next to the semiconductor switch. The temperature sensor can thus be fastened and electrically connected on the same conductive surface on which the semiconductor switch is also mounted. The section of the semiconductor switch or the surface on which the temperature sensor (in particular heat-transmitting and galvanically conductive) is mounted has a potential which corresponds to the reference potential of the first driver circuit. The section of the semiconductor switch or the surface on which the temperature sensor is mounted (in particular in a heat-transferring and galvanically conductive manner) is connected to the second supply potential via the second semiconductor switch (or connected to the first supply potential via the first semiconductor switch). The section of the semiconductor switch or the surface on which the temperature sensor is mounted (in particular heat-transmitting and galvanically conductive) is connected to an inner terminal of one of the semiconductor switches. The temperature sensor is preferably mounted on the portion or the surface by means of a connection which is electrically conductive or which electrically connects the portion or the surface to the temperature sensor. Alternatively, a mechanical connection is conceivable which is electrically insulating, wherein its insulation properties in particular do not necessarily meet the insulation requirements required by the voltage between the reference potentials.The temperature sensor is connected to the second semiconductor switch in a heat-transferring manner. In particular, the temperature sensor is physically connected to the second semiconductor switch, or to a heat transfer connector connected to the semiconductor switch. The connecting piece can be metallic, for example in the form of a conductor track surface section. The physical connection of the temperature sensor to the second semiconductor switch is heat-transferring and in particular galvanically conductive. The second semiconductor switch may be mounted on a conductive surface, such as a conductive trace. The temperature sensor is also mounted on this conductive surface in this embodiment. The second semiconductor switch may have a bottom side which is mechanically (and electrically conductive) connected to the conductive surface, for example via a solder or sinter connection. The temperature sensor is mounted on this surface (electrically conductive). The second semiconductor switch may be mounted on a first surface portion of the conductive surface (whereby the semiconductor switch is electrically connected thereto), wherein the sensor may be mounted on a second surface portion of the same surface, preferably at a distance of not more than 30 mm, 20 mm, 10 mm, 5 mm or 2 mm. The sensor and the second semiconductor switch may thus be arranged side by side on the same surface. The surface is in particular a copper cladding or a copper sheet of a substrate, for example a printed circuit board. The surface is in particular connected to the drain or collector of the second semiconductor switch (i.e. to an inner terminal of the semiconductor switch).The temperature sensor is preferably galvanically connected to a terminal of the second semiconductor switch, in particular to a drain or collector terminal of the semiconductor switch. The temperature sensor is preferably arranged on a conductive section of the semiconductor switch or on a conductive surface which is connected to the drain or collector of the semiconductor switch in a potential-transmitting manner and is preferably electrically connected to this section or this surface. The connection between the sensor and the surface or section preferably relates only to one connection of the temperature sensor. The at least one further terminal of the temperature sensor is (galvanically conductive) connected to the first driver circuit, i.e. the driver circuit of this semiconductor switch.The first reference potential is preferably more positive than the second reference potential. A supply voltage exists between the reference potentials (during operation); the external terminals of the semiconductor switches are configured for connection to the supply voltage (generally: voltage between the reference potentials). The first reference potential corresponds in particular to a positive pole of a supply voltage, and the second reference potential corresponds in particular to a negative pole of this supply voltage.The first semiconductor switch may be provided as a high-side switch of the power semiconductor circuit. The first driver circuit may be provided as a high-side driver of the power semiconductor circuit. The second semiconductor switch can be provided as a low-side switch of the power semiconductor circuit. The second driver circuit may be provided as a low-side driver of the power semiconductor circuit. The semiconductor switches may form a half bridge. The ends of this half bridge are preferably connected to the reference potentials and correspond in particular to the external connections of the semiconductor switches.The power semiconductor circuit preferably has a control terminal configured to connect a superordinate control device. The control terminal is configured to receive control signals, in particular control signals such as pulse width modulated (PWM) signals. Preferably, the control terminal is connected to the first driver circuit via a galvanic isolation. The galvanic separation is configured for transmitting data signals. The galvanic isolation can be provided as an optocoupler, as a capacitive coupling, as a transformer coupling, as a radio connection or as a combination thereof.The first circuit section (the power semiconductor circuit) in which the first driver circuit and / or the first semiconductor switch are located may be arranged next to the second circuit section (the power semiconductor circuit) in which the second driver circuit and / or the second semiconductor switch are located. Circuit sections are topological sections (electrically connected sections) of a circuit which do not necessarily have to have an electromechanical correspondence as a limited area in the layout of the circuit. There is preferably an electrical (galvanically conductive) connection. Via this connection, the temperature sensor (or at least one connection or contact thereof) is connected to the first driver circuit, in particular in a galvanically conductive manner. The connection bridges a possibly present distance between the first and the second circuit section, in particular a separating strip exists between the two circuit sections. In addition to the connection mentioned, there is a further connection which connects the two semiconductor switches to one another, in particular the source of the first semiconductor switch (high side) to the drain of the second semiconductor switch (low side). This connection also extends from the first circuit section to the second circuit section and leads in particular from a first surface region in which the first semiconductor switch is located to a second surface region in which the second semiconductor switch is located.The connection leading to the temperature sensor leads from a temperature input of the first driver circuit to a (conductive) section of the second semiconductor switch or a (conductive) surface which is connected to the second semiconductor switch and which leads to the second reference potential via a switchable section of the second semiconductor switch. In other words, this portion or this surface is connected to an inner terminal of one of the semiconductor switches.The first driver circuit is preferably configured to emit a temperature signal via a temperature output of the first driver circuit, which temperature signal identifies a temperature detectable by the temperature sensor. If a superordinate control device is provided, then the temperature output is preferably connected or connectable to the latter in a signal-transmitting manner. The temperature output of the driver circuit is preferably connected via a galvanic isolation to the superordinate control device (or a signal connection for this purpose). The galvanic isolation can be provided as an optocoupler, as a capacitive coupling, as a transformer coupling, as a radio connection or as a combination thereof. The first driver circuit is connected to the superordinate control device or a signal connection for this purpose in a signal-transmitting manner, wherein control signals can be transmitted from the superordinate control device or a signal connection for this purpose to the driver circuits (or at least the first driver circuit) (in particular via a galvanic isolation, for example via an optocoupler), and a temperature signal can be transmitted from the first driver circuit to a superordinate control device or to a signal connection for this purpose. The relevant transmission path is galvanically insulating or provides at least one potential offset. The superordinate control device can be provided as a microprocessor or microcontroller. The control device can furthermore realize a (preferably) space vector-based motor control (field control) or at least a PWM generation.Embodiments provide that the temperature sensor does not have any insulation or an insulation with a nominal or maximum voltage of which is not greater than the voltage between the first reference potential and the second reference potential, i.e. which does not correspond to the insulation requirements that the nominal voltage between the reference potentials, compared to a potential at a terminal of the second semiconductor switch which is opposite a terminal of the second semiconductor switch connected to the second reference potential (for example an inner terminal). Furthermore, an insulation can be provided which satisfies these insulation requirements. There would be a redundancy or an insulation with respect to the insulation, which would also have a separating effect if a connection between the inner terminals of the power switches is separated and thus a voltage can exist between the inner terminals of the power switches (i.e. between the first driver circuit and the more positive terminal of the two terminals of the second power semiconductor).The power transistors are preferably IGBTs or MOSFETs. The power transistors are designed for reverse voltages of at least 100 V, 400 V or 1000 V. The power transistors have a (permanent) current carrying capacity of at least 10 A, 50 A or 100 A. The power transistors can each be provided as individual transistor elements or as a parallel connection of a plurality of transistor elements in order to multiply the current carrying capacity.A power converter having a plurality of phases may be provided, wherein a power semiconductor circuit as described herein is provided in each phase. The power converter can have a higher-order control device. This is connected in particular in each phase via a respective galvanic isolation (optocoupler, capacitive or transformer isolation, radio connection) to the respective first driver circuit of the relevant phase. Thereby, the control device can execute polyphase control. The power converter is in particular a vehicle power converter, for example a vehicle charging converter, vehicle charging rectifier (for example designed as a PFC) or preferably a vehicle traction inverter. The power converter can be designed as a (vehicle) inverter, as a vehicle-side or charging station-side charging rectifier or as a vehicle-side or charging station-side power factor correction filter (PFC). Exemplary embodiments relate to the embodiment of the power converter as an inverter, in which the power switches are embodied as a BnC circuit, where n corresponds to twice the number of phases, approximately 6.The semiconductor switches may be mounted on a first substrate and the driver circuits may be mounted on a second substrate, wherein these two substrates (for example printed circuit boards) are signal-transmittingly connected to one another, preferably via a signal-transmitting galvanic isolation (on the first or second substrate). The semiconductor switches can furthermore be mounted on a first (surface) section of a substrate and the driver circuits can be mounted on a second (surface) section of the substrate, wherein these two sections are connected to one another in a signal-transmitting and also galvanically conductive manner. A region without conductive material can be provided between the sections, which preferably occupies the entire boundary region between the sections. At least the connection leading to the temperature sensor (i.e. the connection between sensor and first driver circuit) bridges this boundary region.FIG. 1 shows a power semiconductor circuit which is driven by an (external) superordinate control device C via a control terminal SA. The connection leads from the control device via the control terminal SA to a galvanic isolation GT, via which the control terminal SA is connected to a first driver circuit HT. A second driver circuit LT can also be controlled accordingly via the control terminal SA, the corresponding (galvanically isolating) signal-transmitting connection not being shown for the sake of better clarity.The control terminal SA is connected to an input E of the first driver circuit HT via the galvanic isolation GT (for instance an optocoupler). An input (not shown) of the second driver circuit LT can also be connected to the control terminal in a signal-transmitting manner, preferably via the galvanic isolation. The first driver circuit HT has an output A. Via this, a temperature signal TS (preferably via a galvanic isolation GT', for example a further optocoupler) can be transmitted to the higher-level control device C. This connection is shown purely symbolically by the dashed arrow in FIG. 1. A corresponding connection preferably also exists between the control device C and the second driver circuit, which is not shown, however, for the sake of better clarity. The insulation resulting from the galvanic isolation (for instance optocoupler) is denoted symbolically by IS. The signals between the control device C on the one hand and the driver circuits HA, LA on the other hand are transmitted via an insulation. At least one temperature input T 1, T 2 (explained in more detail below) receives a sensor signal (from temperature sensor T), which is output as signal TS in an unprocessed or processed manner. The signal TS may represent the sensor signal of the temperature sensor T with continuous values, discrete values, or as a result of a threshold comparison (as an indication of whether or not a threshold is exceeded).The power semiconductor circuit includes the first driver circuit HT and the second driver circuit LT, and the first driver circuit HT is located in a first circuit portion HA. The second driving circuit LT is a second circuit portion LA. The first circuit section HA can be considered a high-side section of the circuit, while the second circuit section LA can be considered a low-side section of the circuit. The circuit section HA also has a first semiconductor switch HS. The second circuit section LA includes a second semiconductor switch LS. The semiconductor switches HS, LS are connected in series with each other. This results in a half bridge. The semiconductor switches HS, LS are designed as MOSFETs, wherein the drain D of the second power switch LS is connected to the source of the first power switch HS. The gates G of the two power switches are connected to the associated first and second driver circuits, respectively. For this purpose, each driver circuit HT, LT has a driver output HAS, LAS, which serves for driving the first semiconductor switch HS (high side) or for driving the second semiconductor switch LS (low side). A first diode HD connects a drain signal input HRS of the first driver circuit HT to the drain D of the first semiconductor switch HS. A second diode D connects a drain signal input LRS of the second driver circuit LT to the drain D of the second semiconductor switch LS. The flow directions of the diodes D are shown. The inputs HRS, LRS are used to receive a feedback signal originating from the respective drain; the feedback signal HRS is thus a high-side feedback signal of the drain D of the first semiconductor switch HS (high-side), while the feedback signal LRS is a low-side feedback signal of the drain of the second semiconductor switch LS (low-side).The semiconductor switches HS, LS are each arranged in an associated surface region HB, LB. A temperature sensor T (sensor T for short) of the power semiconductor circuit is arranged in the surface region LB in which the second semiconductor switch LS is located. In particular, the temperature sensor T is located in the surface region in which the drain potential D exists. The temperature sensor T is thus arranged on the second semiconductor switch LS, in particular on the side of the semiconductor switch LS on which the drain terminal or inner terminal of the second semiconductor switch LS is located. The temperature sensor T is thus provided opposite to the side of the semiconductor switch LS which is directly connected to the second supply potential HV-. Rather, the temperature sensor T is provided on the side of the semiconductor switch LS that is connected to the first semiconductor switch HS. Preferably, a conductive mounting surface on which the semiconductor switch LS is provided has the potential of the drain D of the semiconductor switch LS; the sensor T is mounted on this surface. The semiconductor switches LS and HS each have a gate G, a source D and a drain D, wherein the source S of the semiconductor switch HS is connected to the drain D of the semiconductor switch LS. In particular, the sensor T is electrically conductively connected to this fastening surface; in the case of an (in particular insufficiently) insulated sensor which is located on this fastening surface, this insulation (which surrounds the sensor at least partially) is not stressed in the error-free operation on account of the potential identity between the sensor T and the fastening surface. Such an insulation can serve for an (insulation) high-voltage protection. The insulation can be realized by an insulating housing (not sufficient for the rated voltage) or a protective varnish (not sufficient for the rated voltage) of the sensor T.A connection V between the first driver circuit HT and the temperature sensor T leads from the first circuit section HA to the second circuit section LA. In particular, this connection V leads from the first circuit section HA or from the driver circuit HT to the surface region LB on which the semiconductor switch LS is located in particular. The circuit sections LA and HA are adjacent to one another, wherein the connection V bridges this spatial separation (or a surface section therebetween). This also applies to the circuit portion LA and the surface region LB on which the second semiconductor switch LS (lowside) is located.The temperature sensor T of FIG. 1 is galvanically conductively connected to the first driver circuit HT (via the connection V), in particular to two temperature connections T 1, T 2 of the first driver circuit HT. The first temperature terminal T 1 is connected to a first side of the temperature sensor T. A second temperature terminal T 2 is connected to the opposite, second side of the temperature sensor. This second side of the temperature sensor T is also connected to the drain D of the transistor LS, i.e. to the terminal of the one transistor that is opposite to the second supply potential HV-. The temperature sensor T is thus galvanically connected (directly or via a resistor or the like) to the (bipolar) temperature input T 1, T 2 of the first driver circuit HT. The temperature sensor T or a first side thereof is connected to a first temperature input T 1 of the first driver circuit HT. The opposite side of the sensor T is likewise connected to the temperature input of the driver circuit HT, in particular to a second temperature input T 2. In addition, the temperature sensor T, in particular its latter side (i.e. the side connected to T 2), is connected to that side of the power switch LS which is connected to the first power switch HS or to the side of the first power switch HS which is provided opposite the terminal of switch HS connected to HV+.A power converter can be provided which has a plurality of half bridges or phases, each of which has a semiconductor circuit having the transistors HS and LS, or which has a plurality of such semiconductor circuits, wherein the transistors HS are connected in parallel with one another and the transistors LS are connected in parallel with one another in each half bridge. Each half bridge may include a temperature sensor (or multiple temperature sensors) such as temperature sensor T.The transistors HS, LS and the driving circuits LT, HT may be provided on different substrates, or may be provided on the same substrate. The control device C may be disposed on the same substrate or on a different substrate as the driving circuits LT, HT.

Claims

Power semiconductor circuit having a first driver circuit (HT) and a first semiconductor switch (HS) which is driven by the latter and is connected to a first reference potential (HV+), and having a second driver circuit (LT) and a second semiconductor switch (LS) which is driven by the latter and is connected to a second reference potential (HV-), the first and the second semiconductor switches (LS) being connected in series to one another, and having a temperature sensor (T) which is galvanically connected to a temperature input (T1, T2) of the first driver circuit (HT) and which is arranged on the second semiconductor switch (LS) and is connected to the latter in a heat-transferring manner, the temperature sensor (T) being galvanically connected to a terminal of the second semiconductor switch (LS).The power semiconductor circuit of claim 1, wherein the first reference potential (HV+) is more positive than the second reference potential (HV-).Power semiconductor circuit according to claim 1 or 2, wherein the semiconductor switches (HS, LS) form a half bridge circuit.Power semiconductor circuit according to one of the preceding claims, wherein the power semiconductor circuit has a control terminal (SA) configured to connect a superordinate control device (C), wherein the control terminal (SA) is connected to the first driver circuit (HT) via a galvanic isolation (GT).Power semiconductor circuit according to one of the preceding claims, wherein a first circuit section (HA) in which the first driver circuit (HT) and the first semiconductor switch (HS) are located is arranged next to a second circuit section (LA) in which the second driver circuit (LT) and the second semiconductor switch (LS) are located, and wherein an electrical connection (V) via which the temperature sensor (T) is connected to the first driver circuit (HT) leads from the first circuit section (HA) to the second circuit section (LA).Power semiconductor circuit according to one of the preceding claims, wherein the first driver circuit (HT) is configured to emit a temperature signal (TS) via a temperature output (A) of the first driver circuit (HT), which temperature signal identifies a temperature detectable by the temperature sensor (T).Power semiconductor circuit according to one of the preceding claims, wherein the temperature sensor (T) has no insulation with respect to a potential at a terminal (D) of the second semiconductor switch (LS) which is opposite a terminal (S) of the second semiconductor switch (LS) connected to the second reference potential (HV-).Power converter having a plurality of phases, wherein a power semiconductor circuit according to one of the preceding claims is provided in each phase, wherein the power converter has a superordinate control device (C) which is connected in each phase via a respective galvanic isolation (GT) to the respective first driver circuit (HT) of the relevant phase.Power converter according to Claim 8, which is designed as an inverter, rectifier or power factor correction filter.

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