Microelectromechanical sensor component and microelectromechanical inertial sensor
A microelectromechanical sensor component with a frame-like reference electrode compensates for mechanical stress, ensuring stable signal measurement and improved accuracy by adjusting the reference signal, addressing offset instability and noise issues.
Patent Information
- Application Number
- DE102024207997
- Authority / Receiving Office
- DE · DE
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2024-08-22
- Publication Date
- 2026-02-26
AI Technical Summary
Existing microelectromechanical sensor components face challenges in maintaining accurate signal measurement due to mechanical stress, which causes fluctuations in the distance between the seismic mass and evaluation electrode, leading to offset instability and reduced signal-to-noise ratio.
The design incorporates a reference electrode surrounding the seismic mass, anchored to the substrate with multiple attachment points, forming a frame that compensates for mechanical stress-induced changes by providing a reference signal that adjusts accordingly, ensuring a stable differential evaluation.
This design achieves high offset stability and improved signal-to-noise ratio by effectively compensating for mechanical stress effects, allowing for precise measurement of physical quantities, particularly translational acceleration.