POWER CONVERSION DEVICE

Abstract

A power conversion device includes a power factor correction circuit including: a power semiconductor having a heat radiation surface facing a first main surface of a cooling plate, fixed to the first main surface to exchange heat with the cooling plate, and electrically connected to a driver board; an electrolytic capacitor disposed on a side of the power semiconductor opposite to the cooling plate and a same side of the power semiconductor as the driver board, and electrically connected to the driver board; and a resin mold fixed to the first main surface of the cooling plate, defining a position of the power semiconductor, and interposed at least between the power semiconductor and the electrolytic capacitor.A second major surface of the cold plate is thermally connected to a housing when the power factor correction circuit module is attached to the housing.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a power conversion device. GENERAL STATE OF THE ART

[0002] In the related art, a power conversion device such as a charger installed on an electric vehicle or the like is in need of miniaturization due to limited installation space. For example, Japanese Patent Publication No. 6749428 discloses a technique for miniaturizing an entire device by providing a structure in which a power semiconductor, a smoothing capacitor, and a gate driver board are embedded in a power conversion device.

[0003] However, when power conversion is performed at high current or high voltage, the power semiconductor's power loss and heat generation increase. Furthermore, as the power semiconductor's heat generation increases, the resulting heat also increases the ambient temperature, and thus there is a possibility that adverse effects, such as capacitor deterioration, may occur due to heat.Under such circumstances, for example, when using a liquid-cooled type as a heat dissipation method, there may be a case where a refrigerant stagnates in a flow path and heat cannot be dissipated efficiently depending on the structure of the flow path, such as when employing a structure in which a flow path in a vertical direction branches off from a flow path in a horizontal direction according to the layout of a power semiconductor, etc. Therefore, there has been room for improvement in terms of heat radiation of the power semiconductor.

[0004] One of the problems to be solved by the present disclosure is the miniaturization of a power conversion device taking heat radiation characteristics into consideration. SUMMARY OF THE INVENTION

[0005] A power conversion device according to the present disclosure includes a housing and a power factor correction circuit module. A co-planar flow path is formed in the housing. The power factor correction circuit module is detachably attached to the housing. The power factor correction circuit module includes a cooling plate, a power semiconductor, an electrolytic capacitor, and a resin mold. The cooling plate has thermal conductivity and is formed in the shape of a flat plate. The power semiconductor has a heat radiation surface facing a first main surface of the cooling plate, is attached to the first main surface to exchange heat with the cooling plate, and is electrically connected to a driver board.The electrolytic capacitor is arranged on a side of the power semiconductor opposite the cooling plate and on a side of the power semiconductor on the same side as the driver board, and is electrically connected to the driver board. The resin mold is attached to the first main surface of the cooling plate, defines a position of the power semiconductor, and is located at least between the power semiconductor and the electrolytic capacitor. A second main surface, which is a back surface of the first main surface of the cooling plate, is thermally connected to the housing when the power factor correction circuit module is attached to the housing.

[0006] According to the present disclosure, it is possible to miniaturize a power conversion device taking heat radiation characteristics into consideration. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a diagram illustrating an example of a configuration of a charging system including a power conversion device on which a power factor correction circuit module according to an embodiment is installed; Fig. 2 is a perspective view showing an example of a configuration of the power factor correction circuit module of Fig. 1; and Fig. 3 is a cross-sectional view showing an example of a configuration of the power factor correction circuit module of Fig. 1 represents. DETAILED DESCRIPTION

[0007] Hereinafter, embodiments of a power factor correction circuit structure, a power factor correction circuit module, a power conversion device, a vehicle, and a charging system according to the present disclosure will be described with reference to the drawings.

[0008] In the description of the present disclosure, components having the same or substantially the same functions as those described above in the previously described drawings are denoted by the same reference numerals, and their description may be omitted accordingly. Furthermore, even in a case of illustrating the same or substantially the same part, the dimensions or ratios may be illustrated differently depending on the drawings. To ensure the clarity of the drawings, only the main components are denoted by reference numerals in the description of each drawing, and even the components having the same or substantially the same functions as those described in the previous drawings may not be denoted by reference numerals.

[0009] In the description of the present disclosure, components having the same or substantially the same functions may be distinguished and described by adding alphanumeric characters to the end of the reference numerals. Alternatively, in a case where a plurality of components having the same or substantially the same functions are not distinguished, the components may be integrated and described by omitting the alphanumeric characters added to the end of the reference numerals.

[0010] Fig. 1 is a diagram illustrating an example of the configuration of a charging system 1 according to an embodiment. As shown in Fig. 1, the charging system 1 includes an AC power source 11, a load 13 and a power conversion device 2. Fig. 1 illustrates a case where a three-phase AC power source (external power source) and a battery are connected to the power conversion device 2 as the AC power source 11 and the load 13.

[0011] For example, the power conversion device 2 according to one embodiment can be installed in a vehicle as an in-vehicle charger. The power conversion device 2 can be, for example, an in-vehicle charger that converts the alternating current supplied from an external single-phase or three-phase alternating current source 11 into direct current and supplies the converted direct current to a load 13 installed in the vehicle. The load 13 can be, for example, a battery, an inverter, a motor, various electrical components, or the like. In other words, the power conversion device 2 according to the embodiment can be implemented as an in-vehicle charger that converts the alternating current from the external alternating current source 11 into direct current and supplies power to the load 13, such as a vehicle battery that is charged using the direct current.

[0012] As a vehicle, for example, various moving bodies such as passenger cars, freight trucks, delivery trucks, motorcycles, electric scooters, and the like, which are configured to be powered or capable of powering devices (electrical devices) using electric power from a battery, can be used appropriately. As an electrical device, for example, a navigation device, audio device, air conditioner, power window, dehumidifier, electronic control unit (ECU), global positioning system (GPS) module, in-vehicle camera, and the like can be used.Furthermore, the vehicle's battery only needs to be capable of storing electrical energy for driving a traction motor (main motor), electrical components, and the like installed on the vehicle. For example, any battery, such as a lithium-ion battery, a nickel-hydrogen battery, an all-solid-state battery, and the like, can be used appropriately. The power conversion device 2 according to the embodiment is not limited to the vehicle and can be used in, for example, an aircraft, a gaming device, an uninterruptible power source device, and the like.

[0013] The AC power source 11 is, for example, any external power source, such as a power source installed at a fast charging facility, a commercial power source, and the like. The AC power source 11 is not limited to a single-phase AC power source and a three-phase AC power source (multi-phase AC power source), and a two-phase AC power source (multi-phase AC power source) may be used. In the present embodiment, as the AC power source 11 that supplies AC power to the power conversion device 2, a case where any single-phase or three-phase AC power source 11 can be used is exemplified.That is, in the present embodiment, the power conversion device 2 is configured to be operable with both the AC power from the single-phase AC power source 11 and the AC input from the three-phase AC power source 11.

[0014] As in Fig. 1, the power conversion device 2 is electrically connected to the AC power source 11 via any one of a plurality of power source lines L1 to L3 and N. Each of the plurality of power source lines L1 to L3 and N is electrically connected to an input terminal of the power conversion device 2. For example, the power source line L1 is an electric wire through which a single-phase current flows from the single-phase AC power source 11. For example, the power source line L1 is an electric wire through which a U-phase (first phase) current, for example, from the three-phase AC power source 9b, flows. For example, the power source line L2 is an electric wire that is not electrically connected to the single-phase AC power source 11. For example, the power source line L2 is an electric wire through which a V-phase (second phase) current, for example, from the three-phase AC power source 11, flows.For example, the power source line L3 is an electrical wire that is not electrically connected to the single-phase AC power source 11. For example, the power source line L3 is an electrical wire through which a W-phase (third phase) current flows, for example, from the three-phase AC power source 11. For example, the power source line N is a neutral line and is electrically connected to each of the single-phase or three-phase AC power sources 11 and a ground potential.

[0015] As in Fig. 1, the power conversion device 2 comprises a noise filter 4, a power factor correction (PFC) circuit 5 and a DC-DC conversion circuit 6.

[0016] The noise filter 4 suppresses (noise suppression) the intrusion of noise from the AC power source 11 into the power conversion device 2 and the outflow of noise from the power conversion device 2 to the AC power source 11. The noise filter 4 is electrically connected to each of the input terminals of the power conversion device 2 and the power factor correction circuit 5 via the plurality of power source lines L1 to L3 and N. In an example of Fig. 1, the noise filter 4 includes a plurality of coils provided in each of the plurality of power source lines L1 to L3 and N. Each of the plurality of coils is, for example, a common-mode choke coil, a normal-mode choke coil, or the like. Furthermore, a switch that shorts the input terminal of the power conversion device 2 and the power factor correction circuit 5 when turned on is provided in parallel with the coil provided in the power source line N. This switch operates, for example, under the control of a control circuit (not shown) of the power conversion device 2.

[0017] Note that in the noise filter 4, a plurality of X capacitors may be provided between each coil and the input terminal of the power conversion device 2. The plurality of X capacitors are electrically connected (line-to-line) between each of the power source lines L1 to L3 and the power source line N.

[0018] Note that, for example, in a subsequent stage of the noise filter 4, an inrush current prevention resistor may be provided in each of the plurality of power source lines L1 to L3. This inrush current prevention resistor is, for example, an inrush current prevention element such as a thermal fuse resistor, a cement resistor, and a thermistor, and prevents an inrush current from flowing through the power factor correction circuit 5.

[0019] The power factor correction circuit 5 rectifies and smoothes the AC voltage from the AC power source 11 to generate a DC voltage. As shown in Fig. As shown in Figure 1, the power factor correction circuit 5 is electrically connected to the noise filter 4 and the DC-DC conversion circuit 6. The power factor correction circuit 5 has MOSFETs 51a, 51c, 51e, and 51g on the high side, MOSFETs 51b, 51d, 51f, and 51h on the low side, and electrolytic capacitors 53a and 53b. Here, MOSFETs 51a to 51h are examples of a plurality of power semiconductors of the power conversion device 2.

[0020] The MOSFET 51 rectifies the AC voltage from the AC power source 11. A simple equivalent circuit of each MOSFET 51 is configured, for example, to use a switch, a capacitor, and a diode, and operates according to a control signal from a control circuit (not shown) of the power conversion device 2. For example, in the simple equivalent circuit, the switch, the capacitor, and the diode are electrically connected in parallel. For example, in the MOSFET 51 on the high side, an anode and a cathode of the diode are electrically connected to an input side (AC power source 11 side) and an output side (load 13 side) of each MOSFET 51, respectively. On the other hand, in the MOSFET 51 on the low side, the anode and the cathode of the diode are electrically connected to the output side and the input side of each MOSFET 51, respectively. In each MOSFET 51, one switch is turned on and off at a time.off, which corresponds to a control signal from a control circuit (not shown) of the power conversion device 2, to switch communication / sharing. In each MOSFET 51, charges from an AC power source are accumulated in a capacitor during a period in which the switch is off (sharing), and a potential difference occurs between the terminals on the input side and the output side. Note that, in the present embodiment, the fact that the internal switch is turned on / off is expressed by turning the MOSFET 51 on / off.

[0021] The input side and output side of each high-side MOSFET 51 are electrically connected to the coil of the noise filter 4 and the input side of each high-side MOSFET 61 of the DC-DC conversion circuit 6, respectively. Furthermore, the input side and output side of each high-side MOSFET 51 are electrically connected to the coil of the noise filter 4 and the input side of each low-side MOSFET 61 of the DC-DC conversion circuit 6, respectively.

[0022] MOSFETs 51a and 51b are examples of a pair of power semiconductors connected to the power source line L1, that is, corresponding to a specific phase among a plurality of phases of the AC power source 11. Specifically, MOSFETs 51a and 51b rectify a single-phase current from the single-phase AC power source 11 flowing through the power source line L1, or, for example, a U-phase (first phase) current from the three-phase AC power source 11. MOSFETs 51c and 51d are examples of a pair of power semiconductors connected to the power source line L2, that is, corresponding to another phase of the specific phase among the plurality of phases of the AC power source 11.Specifically, MOSFETs 51c and 51d rectify a single-phase current from the single-phase AC power source 11 flowing through the power source line L2, or, for example, a V-phase (second phase) current from the three-phase AC power source 11. MOSFETs 51e and 51f are examples of a pair of power semiconductors connected to the power source line L3, that is, corresponding to another phase of the specific phase among the plurality of phases of the AC power source 11. Specifically, MOSFETs 51e and 51f rectify a single-phase current from the single-phase AC power source 11 flowing through the power source line L3, or, for example, a W-phase (third phase) current from the three-phase AC power source 11. MOSFETs 51g and 51h are examples of a pair of power semiconductors connected to the power source line N, that is, corresponding to a neutral line.Specifically, the MOSFETs 51g and 51h form a circuit to return the single-phase current flowing through the power source lines L1 to L3 from the single-phase AC power source 11 to the AC power source 11.

[0023] An electrolytic capacitor 53 smoothes the current rectified by the MOSFET 51. The electrolytic capacitor 53 is an output capacitor of the power factor correction circuit 5. Furthermore, the electrolytic capacitor 53 can be expressed as an input capacitor of the DC-DC conversion circuit 6.

[0024] Fig. 1 illustrates electrolytic capacitors 53a and 53b as electrolytic capacitor 53. Electrolytic capacitors 53a and 53b are electrically connected between the output side (load 13 side) of MOSFET 51 on the high side and the output side (load 13 side) of MOSFET 51 on the low side. Note that electrolytic capacitors 53a and 53b may be implemented by one electrolytic capacitor or by three or more of a plurality of electrolytic capacitors. For example, Fig. 2 shows an example of implementation using eight electrolytic capacitors 53.

[0025] The DC voltage conversion circuit 6 converts a DC voltage generated by the power factor correction circuit 5 back into an AC voltage and then rectifies and smoothes the AC voltage to generate a DC voltage with any specified voltage. As shown in Fig. 1, the DC-DC converter circuit 6 is electrically connected to each of the power factor correction circuits 5 and the output terminal of the power conversion device 2. The DC-DC converter circuit 6 includes MOSFETs 61a to 61d on the primary side, a coil 63 on the primary side, a transformer 73, MOSFETs 81a to 81d on the secondary side, a coil 83 on the secondary side, and an output capacitor 85. Note that each of the coils 63 on the primary side and the coil 83 on the secondary side can be replaced by the leakage inductance of the transformer 73. Here, the MOSFETs 61a to 61d on the primary side are examples of a plurality of power semiconductors of the power conversion device 2.

[0026] The primary-side MOSFETs 61a to 61d and the coil 63 convert a DC voltage from the electrolytic capacitor 53 as an input capacitor into an AC voltage through a switching operation of the MOSFET 61 under the control of a control circuit (not shown) of the power conversion device 2. That is, the primary-side MOSFETs 61a to 61d and the coil 63 form a DC-AC inverter circuit. The simple equivalent circuit of each MOSFET 61 has, for example, the same configuration as that of each MOSFET 51 of the power factor correction circuit 5. For example, in the high-side MOSFET 61, an anode and a cathode of the diode are electrically connected to an output side (load 13 side) and an input side (AC power source 11 side) of each MOSFET 61, respectively. On the other hand, in the MOSFET 61 on the low side, the anode and the cathode of the diode are electrically connected to the input side and output side, respectively.connected to the output side of each MOSFET 61.

[0027] The input side of each high-side MOSFET 61 is electrically connected to the output side of each high-side MOSFET 51 of the power factor correction circuit 5. Furthermore, the input side of each low-side MOSFET 61 is electrically connected to the output side of each low-side MOSFET 51 of the power factor correction circuit 5. Furthermore, the output side of MOSFETs 61a and 61b is electrically connected to one terminal on the primary side of transformer 73 via coil 63. Furthermore, the output side of MOSFETs 61c and 61d is electrically connected to the other terminal on the primary side of transformer 73, that is, the side opposite coil 63.

[0028] The transformer 73 is a voltage converter that transfers the energy of the single-phase alternating voltage generated by the MOSFETs 61a to 61d on the primary side and the coil 63 to the secondary side.

[0029] The secondary-side MOSFETs 81a to 81d and the coil 83 rectify the single-phase AC voltage transmitted from the transformer 73 by a switching operation of the MOSFET 81 under the control of the control circuit (not shown) of the power conversion device 2. The simple equivalent circuit of each MOSFET 81 has, for example, the same configuration as that of each MOSFET 51 of the power factor correction circuit 5. For example, in the high-side MOSFET 81, an anode and a cathode of the diode are electrically connected to an input side (AC power source 11 side) and an output side (load 13 side) of each MOSFET 61, respectively. On the other hand, in the low-side MOSFET 81, the anode and the cathode of the diode are electrically connected to the output side and the input side of each MOSFET 81, respectively.

[0030] The input side of the MOSFETs 81a and 81b is electrically connected via the coil 83 to a terminal on the secondary side of the transformer 73, that is, a terminal with the same polarity as the terminal on the primary side to which the coil 63 is connected in the example of Fig. 1. In addition, the output side of the MOSFETs 81c and 81d is electrically connected to the other terminal on the secondary side of the transformer 73, that is, the side opposite to the coil 83. In addition, the output sides of each of the MOSFETs 81 on the high side and the low side are electrically connected to a pair of output terminals of the power conversion device 2.

[0031] The output capacitor 85 smooths the current rectified by the MOSFET 81. The output capacitor 85 is electrically connected between an output side (load 13 side) of the MOSFET 81 on the high side and an output side (load 13 side) of the MOSFET 81 on the low side. That is, the output capacitor 85 is electrically connected between the two output terminals of the power conversion device 2.

[0032] Note that a control circuit (not shown) of the power conversion device 2 includes, for example, at least one processor and at least one memory, and may have a hardware configuration using a regular computer. A central processing unit (CPU), for example, may be used as this processor. The processor executes, for example, a program to integrally control the operation of the control circuit and implement various functions of the control circuit.It should be noted that, for example, the control circuit causes the processor to load a program stored in a read-only memory (ROM) and the like into a random access memory (RAM) and execute the loaded program, and thus the control circuit may implement various functions of the control circuit, or a dedicated hardware circuit (semiconductor integrated circuit and the like) may implement some or all of the various functions.

[0033] Note that the control circuit of the power conversion device 2 is provided by a domain control unit (DCU) such as an electronic control unit (ECU) installed in a vehicle or a cockpit domain controller (CDC) obtained by integrating a plurality of ECUs; or a computer such as an on-board unit (OBU). Furthermore, the control circuit can send and receive information with another ECU installed in the vehicle or an external power source (AC power source 11) connected to the vehicle via an in-vehicle network including a Controller Area Network (CAN) in the vehicle, Ethernet (registered trademark), or a Universal Serial Bus (USB) (registered trademark), or can communicate with an information processing device outside the vehicle via a network such as the Internet.

[0034] As in Fig. As shown in FIG. 1, the power factor correction circuit 5 and the MOSFET 61 of the DC-DC conversion circuit 6 constitute a power factor correction circuit module 3 according to the embodiment. That is, the power conversion device 2 according to the embodiment supports the power factor correction circuit module 3. Note that the power factor correction circuit module 3 may include other circuit configurations, such as the noise filter 4 and the coil 63.

[0035] Here, the power factor correction circuit structure of the power factor correction circuit module 3 according to the present disclosure will be described in detail with reference to the drawings.

[0036] Fig. 2 is a perspective view showing an example of a configuration (power factor correction circuit structure) of the power factor correction circuit module 3 of Fig. 1 represents. Fig. 2 illustrates the appearance of the power factor correction circuit module 3 of the power conversion device 2 and its surroundings. Fig. 3 is a cross-sectional view showing an example of a configuration (power factor correction circuit structure) of the power factor correction circuit module 3 of Fig. 1 represents. Fig. Fig. 3 illustrates a cross section of the power factor correction circuit module 3 and its surroundings when a YZ plane passing through a plurality of fixing members 39c formed on an X+ side of a relay board 32b of Fig. 2, viewed from the X+ side. It should be noted that in the Fig. 2 and Fig. 3 some or all other configurations of the power conversion device 2 are omitted.

[0037] As in the Fig. 2 and Fig. 3, the power factor correction circuit module 3 is arranged above (Z+ side) of a housing 21 of the power conversion device 2. As shown in Fig. 2, the power factor correction circuit module 3 is detachably attached to the housing 21 by a fastening element 39e, such as a screw.

[0038] In addition, as in the Fig. 2 and Fig. 3, a driver board 31 is arranged above (Z+ side) the power factor correction circuit module 3. The driver board 31 is a main board of the power conversion device 2. Each unit of the power conversion device 2 is electrically connected to the driver board 31 directly or via another component. The driver board 31 is detachably attached to a support unit 25 of the housing 21 by a fastening member (not shown), such as a screw.

[0039] It should be noted that the driver board 31 may be a component of the power factor correction circuit module 3 or may be a component of the power conversion device 2 outside the power factor correction circuit module 3.

[0040] The housing 21 is a flat, plate-shaped member extending along the XY plane. Note that the housing 21 is formed, for example, by die casting, but may also be made of iron or non-alloy. Furthermore, the housing 21 may be made of another metal material as long as the heat from components, such as the power factor correction circuit module 3, mounted on the housing 21 can be transported to a coolant flowing through a flow path 23 inside the housing 21.

[0041] In addition, the housing 21 is equipped with a liquid cooling type cooling mechanism that uses a coolant such as antifreeze as the working fluid. In particular, as shown in Fig. 3, the coolant flow path 23 is formed inside the housing 21. In the housing 21 according to the embodiment, the flow path 23 extends in one direction (for example, in the horizontal direction) along the XY plane. That is, the flow path 23 extending in one plane is formed inside the housing 21.

[0042] The flow path 23 may branch in at least two directions along the XY plane. On the other hand, the flow path 23 according to the embodiment is not branched in a direction along a Z direction. In other words, in the casing 21 according to the embodiment, in a case where an intersection exists where the flow paths 23 cross in at least two directions, the flow paths 23 each extend in the direction along the XY plane from the intersection but do not extend in the direction along the Z direction. As described above, the power conversion device 2 according to the present disclosure can constitute a cooling mechanism of the entire system by having the flow path 23 extend only in one plane (XY plane).

[0043] The power factor correction circuit module 3 and the housing 21 are thermally connected. Thermally connected here means being configured to allow heat exchange. It should be noted that heat transfer between the power factor correction circuit module 3 and the housing 21 is implemented, for example, by conduction, but can also be implemented in other ways in addition to or instead of conduction. Furthermore, heat transfer between the power factor correction circuit module 3 and the housing 21 can be achieved via other components.

[0044] In addition, as in Fig. 2, other components of the power conversion device 2, such as the transformer 73, are also arranged on the housing 21. The transformer 73 is covered with a casing 75. The casing 75 is formed, for example, from metal and shields electromagnetic noise from the transformer 73. The transformer 73 and the driver board 31 are electrically connected, for example, by a fastening element 77, such as a screw, or by soldering.

[0045] Generally, in the power conversion device, the transformer 73 is a component (large component) that is larger than other components. Therefore, the height (length in the Z direction) of the support unit 25 of the casing 21 supporting the driver board 31 is determined such that the transformer 73 is accommodated between the casing 21 and the driver board 31. That is, the height (size in the Z direction) of the power conversion device 2 depends on the distance between the casing 21 and the driver board 31 via the transformer 73. In other words, in a case where the distance (size in the Z direction) between the casing 21 and the driver board 31 is defined based on the size of a large component such as the transformer 73, there is a height overhang at the disposition position of other components of the large component, that is, at a position different from the large component in the XY direction.

[0046] Under such circumstances, the power conversion device 2 according to the present disclosure includes the power factor correction circuit module 3 in which some of the other components among the plurality of components of the transformer 73 are modularized. Furthermore, the power factor correction circuit module 3 is interposed between the case 21 and the driver board 31, with the spacing determined in accordance with the transformer 73. That is, the power factor correction circuit module 3 according to the present disclosure is configured to be smaller in the height direction (Z direction) than other large components of the power conversion device 2, thereby implementing miniaturization of the power conversion device 2.

[0047] As in the Fig. 2 and Fig. 3, the power factor correction circuit module 3 further includes relay boards 32a and 32b, an insulating heat radiation plate 33, and a resin mold 35.

[0048] As in Fig. As shown in Figure 3, the driver board 31 is detachably secured to the resin mold 35 by a fastening element 39a, such as a screw. That is, the resin mold 35 supports the driver board 31.

[0049] The relay boards 32a and 32b are each electrically connected to the driver board 31. A wiring pattern is provided on the relay board 32. The relay board 32 electrically connects electrically connected components to the driver board 31 via the wiring pattern. For example, some components of the power factor correction circuit module 3 (power conversion device 2) are electrically connected to the driver board 31 via the relay board 32. As shown in Fig. As shown in Figure 3, the relay board 32a is detachably secured to the resin mold 35 by a fastening member 39b, such as a screw. Furthermore, the relay board 32b is detachably secured to the resin mold 35 by the fastening member 39c, such as a screw. That is, the resin mold 35 supports each of the relay boards 32a and 32b.

[0050] It should be noted that the electrical connection between the driver board 31 and the relay board 32 can be implemented by soldering or by a detachable connection via a connector.

[0051] As in the Fig. 2 and Fig. As shown in Figure 3, the insulating heat radiation plate 33 is arranged below (Z side) the resin mold 35. The resin mold 35 is fixed to a surface (first main surface) of the insulating heat radiation plate 33 on the driver board 31 side by a fixing member (not shown) such as a screw and an adhesive. In other words, the resin mold 35 supports the insulating heat radiation plate 33.

[0052] The insulating heat radiation plate 33 is a member formed in the shape of a flat plate extending along the XY plane. The insulating heat radiation plate 33 has thermal conductivity (preferably high thermal conductivity) and electrical insulation properties. Specifically, the insulating heat radiation plate 33 only needs to be able to transport heat in a thickness direction (Z direction) and is, for example, a metal plate, but may be formed of a non-metal. Here, the insulating heat radiation plate 33 according to the embodiment is an example of a cooling plate.

[0053] Furthermore, an insulating layer having electrical insulation properties is formed on an outer surface of the insulating heat radiation plate 33. That is, the insulating layer is provided between each of the MOSFETs 51 and 61 and the insulating heat radiation plate 33. Note that the insulating layer may be formed on the outer surface of the insulating heat radiation plate 33 by applying a coating made of a material having electrical insulation properties or by providing a sheet-like member having electrical insulation properties on the outer surface. Note that the insulating heat radiation plate 33 may be a plate-like member made of a material having thermal conductivity and electrical insulation properties.

[0054] At least the side (Z--side) of the insulating heat radiation plate 33 on the casing 21 is formed in a shape corresponding to the shape of the disposition position of the power factor correction circuit module 3 above the casing 21 (Z+-side). Here, a surface of the insulating heat radiation plate 33 on the casing 21 side (Z--side) is a cooling surface of the power factor correction circuit module 3. In other words, in the power conversion device 2, the cooling surface of the power factor correction circuit module 3 extends along the plane (XY plane) on which the flow path 23 of the casing 21 is provided. That is, the cooling surface of the power factor correction circuit module 3 is thermally connected to the casing 21, so that the heat generated inside can be dissipated to the casing 21.

[0055] For example, the power factor correction circuit module 3 is fixed to the casing 21 by fixing the insulating heat radiation plate 33 to the casing 21 with the fixing member 39e. That is, in a state where the power factor correction circuit module 3 is fixed to the casing 21, the surface (second principal surface) of the insulating heat radiation plate 33 on the casing 21 side is thermally connected to the casing 21. Here, the surface of the insulating heat radiation plate 33 on the casing 21 side is a back surface of the surface (first principal surface) of the insulating heat radiation plate 33 on the resin mold 35 side.

[0056] As in Fig. As shown in Fig. 3, the MOSFETs 51 and 61 (power semiconductors) of the power factor correction circuit 5 and the DC-DC conversion circuit 6 are arranged on the surface (first main surface) of the insulating heat radiation plate 33 on the resin mold 35 side. Each of the plurality of MOSFETs 51 and 61 is fixed to the insulating heat radiation plate 33 by a fixing member (not shown) such as an adhesive or an adhesive sheet. The fixing member may be any fixing member as long as the fixing member is formed of at least one material having thermal conductivity. Note that the fixing member may have electrical insulation properties, and in this case, the insulating heat radiation plate 33 may not have electrical insulation properties.

[0057] The cooling surface of each of the plurality of MOSFETs 51 and 61 faces a surface of the insulating heat radiation plate 33 on the resin mold 35 side and is thermally connected to the insulating heat radiation plate 33. That is, the heat radiation path of each of the plurality of MOSFETs 51 and 61 is a path in the Z direction from each of the cooling surfaces to the flow path 23 via the insulating heat radiation plate 33 and the case 21. As described above, the MOSFETs 51 and 61 are each fixed to the surface of the insulating heat radiation plate 33 on the resin mold 35 side, so that heat can be exchanged between the heat radiation surface and the insulating heat radiation plate 33.

[0058] Here, as in Fig. As shown in Figure 3, each of the plurality of MOSFETs 51 and 61 is placed flat on the insulating heat radiation plate 33. Here, "flat" means that the heat radiation surface of each of the plurality of MOSFETs 51 and 61 faces the surface of the insulating heat radiation plate 33 on the resin mold 35 side and is arranged on the insulating heat radiation plate 33.

[0059] Each of the plurality of MOSFETs 51 and 61 is arranged in a gap 37 formed between the insulating heat radiation plate 33 and the resin mold 35. In other words, each of the plurality of MOSFETs 51 and 61 is arranged below (Z- side) the electrolytic capacitor 53 via the resin mold 35. For example, each of the plurality of MOSFETs 51 and 61 is arranged immediately below the electrolytic capacitor 53. That is, an upper surface (Z+ side) of each of the plurality of MOSFETs 51 and 61 is covered with the resin mold 35. Each of the plurality of MOSFETs 51 and 61 is defined (positioned) at a position (for example, position in the XY direction) on the insulating heat radiation plate 33 by the resin mold 35.

[0060] In addition, each of the lead wires 511 and 611 of the plurality of MOSFETs 51 and 61 is electrically connected to the driver board 31. In the Fig. 2 and Fig. 3, the lead wires 511 and 611 of each of the plurality of MOSFETs 51 and 61 are electrically connected to one of the relay boards 32a and 32b, for example, by soldering.

[0061] As described above, by providing the relay board 32 on the power factor correction circuit module 3, some of the components of the power conversion device 2, such as the MOSFETs 51 and 61 (power semiconductors), can be electrically connected to the driver board 31 via the relay board 32, and thus, a certain degree of freedom of arrangement can be increased. For example, in a case where the MOSFETs 51 and 61 are directly connected to the driver board 31, there is a limitation on the installation position of the MOSFETs 51 and 61 due to the arrangement of the cable for connection. On the other hand, in the power factor correction circuit module 3 according to the present disclosure, a degree of freedom of arrangement can be increased due to the indirect connection to the driver board 31 via the relay board 32.

[0062] Note that for some or all of the lead wires 511 and 611 of the plurality of MOSFETs 51 and 61, the lead wires 511 and 611 may extend toward the driver board 31, for example, in the Z direction. That is, each of the plurality of MOSFETs 51 and 61 may be electrically connected to the driver board 31 without using the relay board 32. In this case, some or all of the relay boards 32 may not be provided.

[0063] It should be noted that depending on the number and arrangement of the plurality of MOSFETs 51 and 61, one of the relay boards 32a and 32b may not be provided. That is, the number of relay boards 32 may be one. On the other hand, the number of relay boards 32 may be three or more.

[0064] For example, the relay board 32 may be provided on at least one side in the Y direction of the resin mold 35. For example, the relay board 32 may be provided on at least one side in the X direction of the resin mold 35. That is, the relay board 32 may be provided on at least one side surface portion extending from a bottom surface portion (a part of the Z side) of the resin mold 35 toward the driver board 31 and covering the electrolytic capacitor 53.

[0065] For example, the relay board 32 is provided in at least the bottom surface portion (a part of the Z- side) of the resin mold 35 between the MOSFETs 51 and 61 and the electrolytic capacitor 53. For example, the relay board 32 may be provided on the side opposite the insulating heat radiation plate 33 of each of the plurality of MOSFETs 51 and 61. For example, the relay board 32 may be provided between each of the plurality of MOSFETs 51 and 61 and the resin mold 35. For example, the relay board 32 may be provided below (Z- side) the electrolytic capacitor 53 inside the resin mold 35. In this case, the relay board 32 may be housed inside the resin mold 35 or protrude from the resin mold 35.

[0066] As described above, according to the configuration in which the relay board 32 is provided on the side opposite the insulating heat radiation plate 33 of each of the plurality of MOSFETs 51 and 61, the degree of freedom of arrangement of the plurality of MOSFETs 51 and 61 can be further increased. Furthermore, according to the configuration, the heat radiation (air heat) from the plurality of MOSFETs 51 and 61 to other components, such as the electrolytic capacitor 53, through the relay board 32 can be reduced.

[0067] Furthermore, the relay board 32 is not limited to a flat, plate-shaped board and may be a board with an L-shaped cross section. That is, the relay board 32 may be formed into a shape such as an L-shaped angle (L-shaped angle iron). That is, the relay board 32 may be a board with at least an L-shaped cross section supported by at least two of the bottom surface portions and at least one side surface portion of the resin mold 35. The L-shaped relay board 32 may be provided over two side surfaces (X direction and Y direction) of the resin mold 35, or may be provided over one side surface (X direction or Y direction) and one bottom surface (Z side) of the resin mold 35.

[0068] In addition, the electrolytic capacitor 53 of the power factor correction circuit 5 is arranged on the side (Z+ side) of the resin mold 35 opposite to the MOSFETs 51 and 61, that is, inside the resin mold 35 in the Fig. 2 and Fig. 3. In other words, the electrolytic capacitor 53 is arranged on the side of the driver board 31 of the MOSFETs 51 and 61 that is opposite to the insulating heat radiation plate 33.

[0069] A lead wire 531 of the electrolytic capacitor 53 is electrically connected to the driver board 31. For example, the electrolytic capacitor 53 is fixed to the driver board 31 by soldering or the like and is supported by the driver board 31. For example, the electrolytic capacitor 53 is arranged in the air from the driver board 31 toward the resin mold 35. Furthermore, the electrolytic capacitor 53 may be held by the resin mold 35, or a position thereof may be defined (positioned) with respect to the driver board 31. Note that the electrolytic capacitor 53 may be held by the resin mold 35.

[0070] As described above, the resin mold 35 is interposed at least between the MOSFETs 51 and 61 and the electrolytic capacitor 53, and the radiant heat from the plurality of MOSFETs 51 and 61 and the electrolytic capacitor 53 can be reduced. Specifically, in the power factor correction circuit module 3 according to the present disclosure, the MOSFETs 51 and 61 and the electrolytic capacitor 53 are covered with the resin mold 35.

[0071] That is, in the power factor correction circuit module 3 according to the present disclosure, the resin mold 35 plays a role of holding and positioning the MOSFETs 51 and 61 and a role of insulating the electrolytic capacitor 53.

[0072] Note that the resin mold 35 can further perform the positioning of other components, such as the electrolytic capacitor 53, and not just the MOSFETs 51 and 61. In other words, the resin mold 35 defines (positions) the position of at least each of the MOSFETs 51 and 61.

[0073] Note that the gap 37 between the insulating heat radiation plate 33 and the resin mold 35, or the gap between the resin mold 35 and the electrolytic capacitor 53, may be filled with a heat radiation buffer, such as a gap filler, that has at least heat radiation properties (thermal conductivity). That is, a heat radiation buffer, such as a gap filler, may be used as the heat capacity. Accordingly, the heat radiation performance of the power factor correction circuit module 3 can be further improved. The gap filler preferably also has electrical insulating properties.

[0074] A reflective or absorbing heat shield layer that inhibits heat transfer via the resin mold 35 to the electrolytic capacitor 53 may be formed on a side of the resin mold 35 facing each of the plurality of MOSFETs 51 and 61. Furthermore, a reflective heat shield layer that inhibits heat transfer from the outside may be formed on an outer surface of the electrolytic capacitor 53. These heat shield layers can be formed, for example, by applying a heat shield coating to the outer surface of the resin mold 35. Accordingly, the heat radiation performance of the power factor correction circuit module 3 can be further improved, or heat deterioration of the electrolytic capacitor 53 can be suppressed.

[0075] It should be noted that the power conversion device 2 according to the present disclosure can be expanded by installing a plurality of power factor correction circuit modules 3 in parallel. That is, the power conversion device 2 according to the present disclosure has expandability by modularizing the MOSFET 61 of the power factor correction circuit 5 and the DC-DC conversion circuit 6. For example, the power conversion device 2 can increase the output power (kW) by connecting a plurality of power factor correction circuit modules 3 with a power conversion capacity, that is, a number corresponding to the DC output power (kW), in parallel, that is, by increasing the number of modules.

[0076] As described above, in the power conversion device 2 according to the present disclosure, a power factor correction circuit structure required for power conversion is modularized. Specifically, in the power factor correction circuit module 3 according to the present disclosure, each of the plurality of MOSFETs 51 and 61 can be placed flat on the insulating heat radiation plate 33. Therefore, in the casing 21 of the power conversion device 2, the flow path 23 inside the casing 21 can be formed as a flow path extending only in the horizontal direction (XY direction), and stagnation of the working fluid (coolant) can be suppressed. Furthermore, in the power factor correction circuit module 3 according to the present disclosure, the degree of freedom of the MOSFETs 51 and 61 can be increased by using the relay board 32.In addition, the entire power conversion device 2 can be miniaturized by making the power factor correction circuit module 3 according to the present disclosure more compact in a height direction than a large component such as the transformer 73.

[0077] According to the above-described at least one embodiment, it is possible to miniaturize a power conversion device taking heat radiation characteristics into account.

[0078] Although specific embodiments have been described, these embodiments have been presented only as examples and are not intended to limit the scope of the inventions. Indeed, the novel methods and systems described herein may be embodied in a variety of other forms; further, various omissions, substitutions, and changes may be made in the form of the methods and systems described herein without departing from the spirit of the invention. The appended claims and their equivalents are intended to cover such forms or modifications as fall within the scope and spirit of the invention. (Addition)

[0079] The following techniques are disclosed by the above description of the embodiments. (1) Power conversion device containing: a housing in which a flow path extending in a plane is formed; and a power factor correction circuit module detachably attached to the housing, wherein The power factor correction circuit module contains: a cooling plate having thermal conductivity and formed in the shape of a flat plate; a power semiconductor having a heat radiation surface facing a first main surface of the cooling plate, being fixed to the first main surface to exchange heat with the cooling plate, and being electrically connected to a driver board; an electrolytic capacitor arranged on a side of the power semiconductor opposite the cooling plate and on a side of the power semiconductor on the same side as the driver board and electrically connected to the driver board; and a resin mold attached to the first main surface of the cooling plate, defining a position of the power semiconductor and interposed at least between the power semiconductor and the electrolytic capacitor, and a second main surface, which is a back surface of the first main surface of the cooling plate, is thermally connected to the housing in a state where the power factor correction circuit module is attached to the housing. (2) Power conversion device according to (1), wherein a connecting line of the power semiconductor extends to the driver board. (3) The power conversion device according to (1), wherein the power factor correction circuit module further includes a relay board electrically connected to the driver board, the resin mold carries the relay board and the power semiconductor is electrically connected to the relay board and is connected to the driver board via the relay board. (4) The power conversion device according to (3), wherein the resin mold has a bottom surface portion interposed between the power semiconductor and the electrolytic capacitor, and at least one side surface portion extending from the bottom surface portion toward the driver board and covering the electrolytic capacitor, and the relay board is at least one board supported by at least one of the bottom surface portion and the at least one side surface portion of the resin mold. (5) Power conversion device according to (4), wherein the relay board is a board held by at least two of the lower surface portion and the at least one side surface portion of the resin mold and having at least one L-shaped cross section. (6) The power conversion device according to (3), wherein the relay board is at least one board held by the bottom surface portion of the resin mold interposed between the power semiconductor and the electrolytic capacitor. (7) The power conversion device according to any one of (1) to (6), wherein the power semiconductor is arranged in a gap between the first main surface of the cooling plate and the resin mold, and the gap is filled with a heat radiation buffer. (8) Power conversion device according to any one of (1) to (7), wherein the power factor correction circuit module further comprises the driver board. (9) The power conversion device according to any one of (1) to (8), wherein the power factor correction circuit module contains a number of power factor correction circuit modules, the number corresponding to a power quantity of the power to be converted. (10) The power conversion device according to any one of (1) to (9), further comprising a transformer attached to the housing and electrically connected to the driver board, wherein the power factor correction circuit module is smaller than the transformer in a direction from the housing to the driver board. (11) Vehicle containing: a power conversion device according to any one of (1) to (10) which converts alternating current from an external alternating current source into direct current; and a battery that is charged using the direct current converted by the power conversion device. QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] JP 6749428

[0002]

Claims

[1] Power conversion device comprising: a housing in which a flow path extending in a plane is formed; and a power factor correction circuit module detachably attached to the housing, wherein The power factor correction circuit module contains: a cooling plate having thermal conductivity and formed in the shape of a flat plate; a power semiconductor having a heat radiation surface facing a first main surface of the cooling plate, being fixed to the first main surface to exchange heat with the cooling plate, and being electrically connected to a driver board; an electrolytic capacitor arranged on a side of the power semiconductor opposite the cooling plate and on a side of the power semiconductor on the same side as the driver board and electrically connected to the driver board; and a resin mold attached to the first main surface of the cooling plate, defining a position of the power semiconductor and interposed at least between the power semiconductor and the electrolytic capacitor, and a second main surface, which is a back surface of the first main surface of the cooling plate, is thermally connected to the housing in a state where the power factor correction circuit module is attached to the housing. [2] The power conversion device according to claim 1, wherein a lead wire of the power semiconductor extends to the driver board. [3] Power conversion device according to claim 1, wherein the power factor correction circuit module further includes a relay board electrically connected to the driver board, the resin mold carries the relay board, and the power semiconductor is electrically connected to the relay board and is connected to the driver board via the relay board. [4] Power conversion device according to claim 3, wherein the resin mold has a bottom surface portion interposed between the power semiconductor and the electrolytic capacitor, and at least one side surface portion extending from the bottom surface portion toward the driver board and covering the electrolytic capacitor, and the relay board is at least one board supported by at least one of the bottom surface portion and the at least one side surface portion of the resin mold. [5] The power conversion device according to claim 4, wherein the relay board is a board held by at least two of the bottom surface portion and the at least one side surface portion of the resin mold and has at least one L-shaped cross section. [6] The power conversion device according to claim 3, wherein the relay board is at least one board held by the bottom surface portion of the resin mold interposed between the power semiconductor and the electrolytic capacitor. [7] Power conversion device according to claim 1, wherein the power semiconductor is arranged in a gap between the first main surface of the cooling plate and the resin mold and the gap is filled with a heat radiation buffer. [8] The power conversion device according to claim 1, wherein the power factor correction circuit module further includes the driver board. [9] The power conversion device according to any one of claims 1 to 8, wherein the power factor correction circuit module includes a number of power factor correction circuit modules, the number corresponding to a power amount of the power to be converted. [10] Power conversion device according to one of claims 1 to 8, further comprising a transformer attached to the housing and electrically connected to the driver board, wherein the power factor correction circuit module is smaller than the transformer in a direction from the housing to the driver board.

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