Semiconductor stack, semiconductor device and method for manufacturing a semiconductor device

By employing an oxygen-free protective layer with enhanced oxygen barrier properties, the challenges of nitrogen dissociation and surface roughening in semiconductor devices are addressed, resulting in improved device performance and surface finish.

DE102025135291A1Pending Publication Date: 2026-05-21DENSO CORP +1
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Patent Information

Authority / Receiving Office
DE · DE
Patent Type
Applications
Current Assignee / Owner
DENSO CORP
Filing Date
2025-09-03
Publication Date
2026-05-21

AI Technical Summary

Technical Problem

Conventional methods for producing p-type semiconductor devices using group III nitride semiconductors face challenges in effectively suppressing nitrogen dissociation and surface roughening during the annealing process, particularly due to the limitations of aluminum nitride protective layers.

Method used

The use of an oxygen-free protective layer with enhanced oxygen barrier properties, such as a gallium nitride layer or a combination of carbon film and cover layer, is applied to cover the nitride semiconductor layer to inhibit oxygen action and minimize surface roughening, thereby improving the semiconductor device's performance.

Benefits of technology

This approach effectively suppresses surface roughening and enhances the device's performance by maintaining a smooth surface finish and adhesion, even under high-temperature curing conditions, thus improving the integrity and functionality of the semiconductor device.

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Abstract

A semiconductor stack (100) comprises a nitride semiconductor layer (101) containing a dopant and a protective layer (103) covering a surface (112) of the nitride semiconductor layer. The protective layer is designed to suppress the dissociation of nitrogen from the nitride semiconductor layer during annealing. The protective layer is designed to be oxygen-free and to exhibit a higher oxygen barrier property than an aluminum nitride layer, thus limiting the interaction of oxygen with the surface of the nitride semiconductor layer.
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