Semiconductor structure and method for forming it
DE102026101995A1Undetermined Publication Date: 2026-08-27UNITED MICROELECTRONICS CORP
View PDF 0 Cites 0 Cited by
Patent Information
- Application Number
- DE102026101995
- Authority / Receiving Office
- DE · DE
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2026-01-16
- Publication Date
- 2026-08-27
Smart Images
Figure 00000000_0000_ABST
Abstract
The semiconductor structure comprises: a substrate with at least one substrate via (TSV) forming area located thereon; a dielectric layer arranged on the substrate; and at least one substrate via located in the TSV forming area and penetrating through the dielectric layer and into the substrate. The at least one substrate via includes a plurality of radially extending stress relief slots.
Need to check novelty before this filing date? Find Prior Art