Laser diode device

Abstract

laser diode device (10), comprising - a support (1) with a support top (11), - several laser diode chips (4) arranged on the top surface of the carrier (11), each of the laser diode chips (4) emitting electromagnetic radiation through a emitting surface (5) during operation, the emitting surfaces (5) being perpendicular to the top surface of the carrier (11), - at least one optical element (6) that deflects the electromagnetic radiation emitted by the laser diode chips (4) at least partially perpendicular to the carrier top (11), - several chip carriers (7), and - a mounting plate (3) which is arranged on the top of the carrier (11) and at least partially covers it, wherein the mounting plate (3) is located between the chip carriers (7) and the carrier (1), where - the laser diode chips (4) have different emission wavelengths, - the emission wavelengths differ from each other by a maximum of 15 nm, and - the laser diode chips (4) are directed towards the optical element (6) in such a way that the light beams of the laser diode chips (4) deflected by the optical element (6) at least partially overlap, - on each of the chip carriers (7) exactly one laser diode chip (4) is arranged, - the chip carriers (7) electrically insulate the laser diode chips (4) from the carrier (1), - each of the chip carriers (7) comprises a ceramic, in particular AlN, and - the mounting plate (3) is a copper plate.

Description

[0001] The invention relates to a laser diode device.

[0002] Semiconductor lasers exhibit a strong temperature sensitivity and a corresponding impairment of their efficiency, which leads to a limitation of the maximum achievable optical emission power.

[0003] The publication DE 10 2008 063 634 A1 describes a light source with several laser diodes.

[0004] Document US 2011 / 0 280 266 A1 describes a semiconductor laser device.

[0005] The publication DE 10 2010 012 604 A1 describes a semiconductor laser light source.

[0006] Document US 2008 / 0175284A1 describes a light-emitting device for visual applications.

[0007] Document US 2010 / 0 296 061 A1 describes a projection device with reduced speckles.

[0008] The publication KR 10 0 879 974 B1 concerns a laser module with at least two laser light sources.

[0009] The publication US 2002 / 0 196 414 A1 describes a system for reducing speckles.

[0010] Document US 2002 / 0 018 500 A1 describes a semiconductor laser unit and a semiconductor laser module.

[0011] Document US 2004 / 0 008 744 A1 describes a multiplex laser light source.

[0012] The publication CN 2 01 466 466 U describes a device for polarization-dependent superposition of laser light.

[0013] The invention is based on the objective of providing a laser diode device with efficient heat spreading in the component and increased optical emission power.

[0014] These tasks are solved by a laser diode device according to the independent claim. Advantageous embodiments and further developments of the invention are the subject of the dependent claims.

[0015] The laser diode device comprises a carrier with a carrier top.

[0016] The laser diode device comprises several laser diode chips arranged on the top surface of the substrate, each laser diode chip emitting electromagnetic radiation through a radiation surface during operation. The laser diode chips can be arranged directly on the top surface of the substrate or mounted on a mounting plate. The radiation surfaces are each perpendicular to the top surface of the substrate. The radiation surface is, for example, a side face of the laser diode chip. Thus, a laser diode chip preferably emits radiation in a direction parallel to the main plane of the top surface of the substrate.

[0017] The emitting surface is the area of ​​the laser diode chip through which at least a large proportion of the radiation emitted during operation of the laser diode chip exits the chip. These laser diode chips are then specifically referred to as edge-emitting laser diode chips.

[0018] According to at least one embodiment of the laser diode device, the laser diode chips are specifically configured to emit electromagnetic radiation in the spectral range between UV and infrared radiation during operation. For example, the laser diode chips can be configured to emit UV, blue, green, red, or infrared radiation during operation. In particular, each of the laser diode chips is a laser diode chip based on a nitride compound semiconductor material.

[0019] In the present context, "based on nitride compound semiconductor material" means that a semiconductor layer sequence of a laser diode chip, or at least a part thereof, particularly preferably at least an active zone and / or a growth substrate wafer, is a nitride compound semiconductor material, preferably Al n Ga m In 1-n-mN is present or consists of, where 0 ≤ n ≤ 1, 0 ≤ m ≤ 1, and n+m ≤ 1. This material does not necessarily have to have a mathematically exact composition according to the formula above. Rather, it may, for example, contain one or more dopants as well as additional components. For the sake of simplicity, however, the formula above only includes the essential components of the crystal lattice (Al, Ga, In, N), even though these may be partially replaced and / or supplemented by small amounts of other substances.

[0020] Each laser diode chip can, in particular, have an epitaxially grown sequence of semiconductor layers comprising an active layer formed, for example, from AlGaInN and / or InGaN. The active layer is then configured to emit electromagnetic radiation from the spectral range of ultraviolet radiation to green light during operation. The laser diode chip can, for example, have a conventional pn junction, a double heterostructure, or a quantum well structure as its active layer, preferably a multiple quantum well structure. The term "quantum well structure" here has no bearing on the dimensionality of the quantization. It thus includes, among other things, quantum wells, quantum wires, and quantum dots, and any combination of these structures.

[0021] Each of the laser diode chips is characterized in particular by a high optical output power. In one claimed embodiment, the laser diode chips each have an optical output power of at least 0.1 W.

[0022] The laser diode device comprises at least one optical element which advantageously deflects the electromagnetic radiation emitted by the laser diode chips at least partially perpendicular to the top of the carrier.

[0023] The optical element advantageously deflects at least a portion of the electromagnetic radiation emitted from the laser diode chips by the emitting surfaces of the laser diode device by means of optical refraction and / or reflection. After the emitted electromagnetic radiation strikes the optical element, it is advantageously deflected at an angle of preferably 90° to the top surface of the substrate. Furthermore, the optical element can be used to influence, in particular, the shape and direction of the emitted light beam.

[0024] The laser diode device comprises a mounting plate which is arranged on the top of the carrier and at least partially covers it, wherein the mounting plate is located between the laser diode chips and the carrier.

[0025] The mounting plate is preferably arranged on the upper surface of the support such that a main plane of the mounting plate runs parallel to the upper surface of the support. Preferably, the mounting plate has a flat surface, which allows for an advantageously flat arrangement of components of the laser diode device on the mounting plate.

[0026] Each laser diode chip is preferably positioned with its largest outer surface area on the mounting plate. This advantageously results in the largest possible surface contact area of ​​each laser diode chip with the mounting plate, thereby increasing heat dissipation from the laser diode chip to the mounting plate. This design enables direct heat dissipation from the laser diode chip to the mounting plate. This ensures excellent thermal integration of the laser diode chip with the mounting plate and the substrate. The resulting increase in heat dissipation efficiency from the laser diode chip allows for the use of multiple laser diode chips within the device without significant coupling effects occurring between them.Furthermore, this ensures that the laser diode chip is aligned in such a way that one direction of emission of the electromagnetic radiation runs parallel to the main plane of the mounting plate, making the emission surface of the laser diode chip perpendicular to the mounting plate.

[0027] Furthermore, the mounting plate is advantageously characterized by high thermal conductivity, which leads to efficient heat spreading within the mounting plate.

[0028] Thus, the high thermal conductivity of the mounting plate advantageously results in increased heat transfer from the heat-emitting laser diode chip to the substrate during operation.

[0029] The mounting plate is a copper plate.

[0030] The mounting plate can advantageously have a thickness of 100 µm to a few mm.

[0031] According to at least one embodiment of the laser diode device, the mounting plate preferably has a thickness of at least 0.5 mm and at most 2 mm.

[0032] The laser diode chips are each arranged on a chip carrier.

[0033] The chip carrier is preferably designed as a thin plate with a flat surface and serves as a substrate for the respective laser diode chip during assembly. Advantageously, the chip carrier is made of a material with high thermal conductivity. This advantageously ensures efficient heat dissipation from the laser diode chip to the carrier. The chip carrier provides electrical insulation between the laser diode chip and the carrier. For this purpose, the chip carrier material is preferably a dielectric material and, in particular, does not include any metal. The chip carrier material comprises a ceramic such as AlN. Only one laser diode chip is arranged on each chip carrier. By using chip carriers, laser diode chips can advantageously be mounted quickly, easily, and securely, with the advantage that several laser diode chips can be arranged on the top surface of the carrier and aligned with the optical element.

[0034] According to at least one embodiment of the laser diode device, the optical element is a prism. The use of a prism can be advantageously employed for deflecting light beams by refraction. For example, light beams from several laser diode chips can advantageously be deflected by one or more prisms in such a way that the light beams are spatially separated from one another or partially or completely superimposed.

[0035] According to at least one embodiment of the laser diode device, the optical element is a mirror. As an alternative method for deflecting the light beams emitted by the laser diode chips, the use of at least one mirror as an optical element advantageously allows for the alignment of the deflected light beams by reflection. The mirror is advantageously characterized by high reflectivity, so that virtually no losses occur when the laser light is deflected by reflection.

[0036] According to at least one embodiment of the laser diode device, the optical element is a polarization cube. To deflect differently polarized laser light from the emission direction of the laser diode chips and at least partially superimpose it, a polarization cube is used, for example, as the optical element.

[0037] According to at least one embodiment of the laser diode device, at least one delay plate is arranged between at least one laser diode chip and the optical element. A delay plate can advantageously be arranged between a laser diode chip and the optical element on the upper surface of the substrate. The delay plate can, for example, also be designed as a film and advantageously applied to the optical element. By using at least one delay plate, it is advantageously possible to generate differently polarized light using identical laser diode chips.

[0038] According to at least one embodiment of the laser diode device, the delay plate is a λ / 2 plate.

[0039] A combination of several laser diode chips advantageously enables an increase in the emitted light intensity by deflecting the emitted light from each individual laser diode chip into a preferably common emission direction using an optical element. Advantageously, laser diode chips of the same design can be used. For example, light of the same wavelength from several laser diode chips can be combined into a single emission beam of high intensity. Alternatively, it is also advantageously possible to position delay elements, wave plates, wave foils, or conversion elements between the respective laser diode chips and the optical element to deflect the emission beam. This advantageously allows for the superposition of several wavelengths.

[0040] The laser diode chips are directed towards the optical element in such a way that the light beams of the laser diode chips, deflected by the optical element, at least partially overlap.

[0041] According to at least one unclaimed embodiment of the laser diode device, the laser diode chips are directed towards the optical element in such a way that the light beams of the laser diode chips deflected by the optical element do not overlap.

[0042] In this arrangement of laser diode chips, deflection by the optical element results in spatially separated bundles of light rays. The deflection surfaces of the optical element are not directed towards the same emission point.

[0043] The laser diode chips have different emission wavelengths.

[0044] In addition to using delay plates, the laser diode chips themselves can advantageously emit different wavelengths to generate different emission wavelengths. This offers, in particular, the possibility of utilizing a broad spectrum of wavelengths.

[0045] Advantageously, the separate light beams are each composed of light from several laser diode chips. The light beams can be at least partially superimposed with light of the same wavelength / polarization or with different wavelengths / polarization.

[0046] The emission wavelengths of the laser diode chips differ from each other by a maximum of 10 nm or a maximum of 15 nm.

[0047] The difference in wavelengths between individual laser diode chips can be advantageously minimal. In other words, all laser diode chips can exhibit wavelengths corresponding to the same color, for example, red. A deviation in wavelengths between them can advantageously be only 10 nm or 15 nm. Such a deviation in the emission wavelengths of the laser diode chips can be advantageously achieved through different chip designs, for example, by selecting different semiconductor materials.

[0048] By superimposing emission wavelengths with similar color impressions, the bandwidth of the superimposed light can be increased and, for example, speckles in laser light can be reduced.

[0049] Thus, it is advantageously possible for a single laser diode device to take on the role of several light sources.

[0050] According to at least one embodiment of the laser diode device, the laser diode device comprises a housing which is a TO housing.

[0051] According to at least one embodiment of the laser diode device, the TO housing is sealed tightly from the environment and, in particular, hermetically. Advantageously, the housing is filled with a protective gas or evacuated.

[0052] Furthermore, the present disclosure concerns the following aspects and combinations of aspects, which are numbered: 1. Laser diode device (10), comprising - a support (1) with a support top (11), - at least one laser diode chip (4) which is arranged on the upper surface of the carrier (11), wherein the laser diode chip (4) emits electromagnetic radiation through a emitting surface (5) during operation, wherein the emitting surface (5) is perpendicular to the upper surface of the carrier (11), and - at least one optical element (6) that deflects the electromagnetic radiation emitted by the laser diode chip (4) at least partially perpendicular to the carrier top (11). 2. Laser diode device (10) according to aspect 1, comprising a mounting plate (3) which is arranged on the top of the carrier (11) and at least partially covers it, wherein the mounting plate (3) is located between the at least one laser diode chip (4) and the carrier (1). 3. Laser diode device (10) according to one of aspects 1 or 2, wherein several laser diode chips (4) are arranged on the carrier top (11). 4. Laser diode device (10) according to aspect 3, wherein the laser diode chips (4) have different emission wavelengths. 5. Laser diode device (10) according to aspect 4, wherein the emission wavelengths of the laser diode chips (4) differ from each other by at most 10 nm or at most 15 nm. 6. Laser diode device (10) according to one of aspects 2 to 5, wherein the mounting plate (3) is formed by a Cu plate. 7. Laser diode device (10) according to one of aspects 2 to 6, wherein the mounting plate (3) has a thickness of at least 0.5 mm and at most 2 mm. 8. Laser diode device (10) according to one of the previous aspects, wherein at least one laser diode chip (4) is arranged on a chip carrier (7). 9. Laser diode device (10) according to one of the previous aspects, where the optical element (6) is a prism. 10. Laser diode device (10) according to one of aspects 1 to 8, where the optical element (6) is a mirror. 11. Laser diode device (10) according to one of aspects 1 to 8, where the optical element (6) is a polarization cube. 12. Laser diode device (10) according to one of the previous aspects, wherein at least one delay plate (8) is arranged between the laser diode chip (4) and the optical element (6). 13. Laser diode device (10) according to aspect 12, wherein the delay plate (8) is a λ / 2 plate. 14. Laser diode device (10) according to one of aspects 3 to 5, wherein the laser diode chips (4) are directed towards the optical element (6) such that the light beams of the laser diode chips (4) deflected by the optical element (6) overlap at least partially. 15. Laser diode device (10) according to one of aspects 3 to 5, wherein the laser diode chips (4) are directed towards the optical element (6) in such a way that the light beams of the laser diode chips (4) deflected by the optical element (6) do not overlap. 16. Laser diode device (10) according to one of the previous aspects, wherein the laser diode device (10) comprises a housing (2) which is a TO housing. 17. Laser diode device (10) according to aspect 16, wherein the housing (2) is tightly sealed from the environment and in particular hermetically sealed, wherein the housing is filled with a protective gas or evacuated.

[0053] Further features, designs and advantages will become apparent from the following description of the exemplary embodiments in conjunction with the figures.

[0054] Figures 2, 2a, 3, 3a, 3b and 4 each show a laser diode device according to the embodiments of the invention.

[0055] The Fig. 1 and Fig. Figure 1a shows an example of a non-compliant modification of a laser diode device.

[0056] Identical or equivalent elements are marked with the same reference symbols in the figures. The components depicted in the figures, as well as their relative sizes, are not to scale.

[0057] Fig. Figure 1 shows a schematic side view of an example of a laser diode device 10 described herein. The laser diode device 10 comprises a carrier 1, which in this case is made of steel. A mounting plate 3 is attached to the upper surface 11 of the carrier, with the mounting plate 3 partially covering the upper surface 11 of the carrier. In this case, the mounting plate 3 is made of copper, which provides high thermal conductivity. Furthermore, two contact bars 9a and 9b, which are electrically insulated from each other and advantageously from the carrier 1 and from the mounting plate 3, penetrate the carrier 1 and the mounting plate 3, as shown in the schematic side view of the Fig. 1. mutually obscure each other and therefore in the Fig. 1 only contact rod 9a is shown. The exemplary position of both contact rods 9a and 9b is shown in a top view of the mounting plate 3 in Fig. 3 shown.

[0058] The laser diode device 10 comprises a laser diode chip 4, which is in particular an InGaN laser formed from epitaxially grown semiconductor layers. Advantageously, it is an edge emitter which, during operation, emits electromagnetic radiation through a radiation surface 5, wherein the radiation surface 5 is a side surface of the laser diode chip 4. In the present example, the laser diode chip 4 emits electromagnetic radiation parallel to a principal plane of the mounting plate 3.

[0059] The laser diode chip 4 is configured such that one of its long sides is mounted on a chip carrier 7, this long side advantageously forming the largest surface area of ​​the laser diode chip 4. Furthermore, the emitting surface 5 is perpendicular to the chip carrier 7.

[0060] The chip carrier 7 serves in particular as a base for the laser diode chip 4, advantageously electrically isolates the laser diode chip 4 from the carrier, and is, for example, made of AlN. Furthermore, electrical contact of the laser diode chip 4 can be made from the contact bars 9a and 9b via bond wire connections, although this is not necessary in the Fig. Figure 1 shows the process. The AlN chip carrier 7 is characterized by high thermal conductivity, thus enabling effective thermal connection of the laser diode chip 4 to the mounting plate 3. This results in efficient heat dissipation from the laser diode chip 4 to the mounting plate 3 and further heat distribution within the mounting plate 3, while heat is also dissipated from the mounting plate 3 into the carrier 1.

[0061] An optical element 6, which in particular comprises a prism, is arranged on the mounting plate 3. The prism advantageously serves to deflect the electromagnetic radiation emitted by the laser diode chip 4 by means of refraction. The deflection preferably takes place in a direction A facing away from the mounting plate 3 and the carrier top 11.

[0062] The Fig. Figure 1a shows the example of the following in a schematic sectional view. Fig. 1, wherein a housing 2 is mounted on the carrier 1. The housing 2 advantageously has an opening in the direction of emission above the optical element 6.

[0063] In connection with the Fig. Figure 2 shows an exemplary embodiment based on a schematic sectional view, in which, unlike the example of the Fig. 1 Two laser diode chips 4 and a delay plate 8 are arranged on the mounting plate 3. The laser diode chips 4 can advantageously be identical in construction and emit electromagnetic radiation of the same wavelength, or alternatively, they can be different in construction and have different emission wavelengths. Advantageously, each of the two laser diode chips 4 is mounted on the mounting plate 3 with its own chip carrier 7 and emits radiation through the emitting surface 5 in the direction of the optical element 6. The optical element 6 can advantageously be a prism, which is preferably irradiated by two opposing laser diode chips 4 in an axially symmetrical manner with respect to its central axis, with a delay plate 8 being mounted on the mounting plate 3 between one of the laser diode chips 4 and the prism.Alternatively, the optical element 6 can also consist of two mirrors, with each of the two mirror surfaces replacing the two deflecting surfaces of the prism. The delay plate 8 is, in particular, a λ / 2 plate, which is positioned in front of the laser diode chip 4 such that the delay plate 8 captures all the emitted radiation from the single laser diode chip 4. Deflection of the radiation from the laser diode chips in the direction away from the carrier surface 11 can advantageously lead to at least partial superposition or spatially separated emission of the two deflected laser beams of different wavelengths and polarizations.

[0064] Fig. Figure 2a shows a schematic sectional view of an embodiment which differs from the embodiment of the Fig. Figure 2 differs in that no delay element 8 is arranged between either of the two laser diode chips 4 and the optical element 6. The optical element 6, which in this case is a prism, deflects the light beams of the two laser diode chips 4 into an emission direction A. Advantageously, the two laser diode chips 4 can be oriented with their emission surfaces 5 towards the optical element 6 such that the deflected light beams at least partially overlap or are spatially separated from one another. A possible at least partial overlap of the deflected light beams of the same emission wavelength advantageously results in an increase in the emitted optical power of the laser diode device 10. Alternatively, it is possible to at least partially superimpose two light beams of different wavelengths or to emit them spatially separately from one another.Advantageously, the difference in wavelengths between individual laser diode chips can be minimal. In other words, all laser diode chips can exhibit wavelengths corresponding to the same color, for example, red. The wavelength deviation between them can advantageously be no more than 10 nm or 15 nm. Such a deviation in the emission wavelengths of the laser diode chips can be advantageously achieved through different chip designs, for example, by selecting different semiconductor materials.

[0065] By superimposing emission wavelengths with similar color impressions, the bandwidth of the superimposed light can be increased and, for example, speckles in laser light can be reduced.

[0066] The exemplary embodiment of the Fig. Figure 3 shows a laser diode device 10 according to the embodiment of the Fig. 2 in a top view opposite the emission direction A. The mounting plate 3 covers at least part of the carrier surface 11. The two laser diode chips 4 are mounted on their respective chip carriers 7 and are advantageously arranged opposite each other with respect to the central axis of the optical element 6 on a connecting line D. Precise alignment of the laser diode chips 4 on an axis D results, after deflection of the light beams by an optical element 6, in at least partial superposition of the light beams. In this case, a delay plate 8 is positioned on the mounting plate 3 between one of the laser diode chips 4 and the optical element 6. As an alternative to the present application of a prism, a polarization cube can also advantageously be used as the optical element 6.A polarization cube makes it possible to completely overlap the deflected light beams as differently polarized light beams.

[0067] The electrical contacting of the laser diode chips 4 is advantageously achieved by means of two contact bars 9a and 9b. In this arrangement, both contact bars 9a and 9b penetrate the carrier 1 and the mounting plate 3, preferably laterally spaced from the optical element 6 and opposite each other with respect to the axis D, and are electrically insulated from the carrier 1 and the mounting plate 3. Furthermore, contacting the laser diode chips 4 and the chip carriers 7 via the contact bars 9a and 9b can preferably be achieved by means of bond wire connections.

[0068] Fig. Figure 3a shows a top view of an embodiment of a laser diode device 10, which differs from the Fig. 3 differs in the number of laser diode chips 4 and the chip carriers 7. In the present case, four laser diode chips 4 on four chip carriers 7 with their emission surfaces 5 directed towards an optical element 6, preferably a prism. An exemplary embodiment of the delay plate 8 comprises Fig. 3a not. The four laser diode chips can be of the same design and have the same emission wavelengths, or they can be of different designs and have different emission wavelengths. Due to the effective dissipation of heat from the laser diode chips 4 and the heat spreading in the mounting plate 3, no coupling effects or impairments due to excess heat occur at the laser diode chips. Depending on the orientation of the optical element, it is therefore possible to at least partially superimpose the deflected light beams of the individual laser diode chips or to emit them spatially separately.

[0069] Fig. Figure 3b shows a top view of an embodiment according to a modification of the laser diode device 10 according to the Fig. 3, wherein the two laser diode chips 4 on their chip carriers 7 are located on opposite sides with respect to the optical element 6, but are advantageously not directly opposite each other and thus do not lie on the connecting axis D. A deflection of the light beams by a prism therefore results in two spatially separated light beams.

[0070] Fig. Figure 4 shows a top view of an embodiment according to a further modification of the laser diode device 10 according to Fig.3, wherein two optical elements 6 are arranged on the mounting plate 3. Preferably, the two optical elements are two prisms or mirrors. Preferably, the front surfaces of the optical elements, which deflect the radiation emitted by the laser diode chips 4, are parallel to each other for both optical elements and are aligned with the respective laser diode chips, thus lying between the boundary lines K and L. Furthermore, both front surfaces of the optical elements preferably have the same angle of inclination with respect to the mounting plate. The resulting deflection of the emitted radiation from the laser diode chips 4 produces two light beams, which are spatially separated and parallel to each other.

Claims

[1] Laser diode device (10) comprising - a support (1) with a support top (11), - several laser diode chips (4) arranged on the top surface of the carrier (11), each of the laser diode chips (4) emitting electromagnetic radiation through a emitting surface (5) during operation, the emitting surfaces (5) being perpendicular to the top surface of the carrier (11), - at least one optical element (6) that deflects the electromagnetic radiation emitted by the laser diode chips (4) at least partially perpendicular to the carrier top (11), - several chip carriers (7), and - a mounting plate (3) which is arranged on the top of the carrier (11) and at least partially covers it, wherein the mounting plate (3) is located between the chip carriers (7) and the carrier (1), where - the laser diode chips (4) have different emission wavelengths, - the emission wavelengths differ from each other by a maximum of 15 nm, and - the laser diode chips (4) are directed towards the optical element (6) in such a way that the light beams of the laser diode chips (4) deflected by the optical element (6) at least partially overlap, - on each of the chip carriers (7) exactly one laser diode chip (4) is arranged, - the chip carriers (7) electrically insulate the laser diode chips (4) from the carrier (1), - each of the chip carriers (7) comprises a ceramic, in particular AlN, and - the mounting plate (3) is a copper plate. [2] Laser diode device (10) according to claim 1, wherein the mounting plate (3) has a thickness of at least 0.5 mm and at most 2 mm. [3] Laser diode device (10) according to claim 1 or 2, wherein the optical element (6) is a prism. [4] Laser diode device (10) according to claim 1 or 2, wherein the optical element (6) is a mirror. [5] Laser diode device (10) according to claim 1 or 2, wherein the optical element (6) is a polarization cube. [6] Laser diode device (10) according to one of the preceding claims, wherein at least one delay plate (8) is arranged between the laser diode chip (4) and the optical element (6). [7] Laser diode device (10) according to claim 6, wherein the delay plate (8) is a λ / 2 plate. [8] Laser diode device (10) according to one of the preceding claims, wherein the laser diode device (10) comprises a housing (2) which is a TO housing. [9] Laser diode device (10) according to claim 8, wherein the housing (2) is sealed tightly against the environment and in particular hermetically sealed, wherein the housing is filled with a protective gas or evacuated. [10] Laser diode device (10) comprising - a support (1) with a support top (11), - several laser diode chips (4) arranged on the top surface of the carrier (11), each of the laser diode chips (4) emitting electromagnetic radiation through a emitting surface (5) during operation, the emitting surfaces (5) being perpendicular to the top surface of the carrier (11), - at least one optical element (6) that deflects the electromagnetic radiation emitted by the laser diode chip (4) at least partially perpendicular to the carrier top (11), - several chip carriers (7), and - a mounting plate (3) which is arranged on the top of the carrier (11) and at least partially covers it, wherein the mounting plate (3) is located between the chip carriers (7) and the carrier (1), where - the laser diode chips (4) each have an optical output power of at least 0.1 W, - the laser diode chips (4) have different emission wavelengths, - the emission wavelengths differ from each other by a maximum of 15 nm, and - the laser diode chips (4) are directed towards the optical element (6) in such a way that the light beams of the laser diode chips (4) deflected by the optical element (6) at least partially overlap, - on each of the chip carriers (7) exactly one laser diode chip (4) is arranged, - the chip carriers (7) electrically insulate the laser diode chips (4) from the carrier (1), - each of the chip carriers (7) comprises a ceramic, in particular AlN, and the mounting plate (3) is a copper plate.

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