OPTOELECTRONIC SEMICONDUCTOR COMPONENT, OPTOELECTRONIC ARRANGEMENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT

Abstract

Optoelectronic semiconductor component (1) with - an optoelectronic semiconductor chip (11), and - an electrical connection point (13a) for contacting the optoelectronic semiconductor chip (11), wherein - the electrical connection point (13a) covers the optoelectronic semiconductor chip (11) at least in places on its underside, - the electrical connection point (13a) comprises a contact layer (131) facing the optoelectronic semiconductor chip (11), - the electrical connection point (13a) comprises at least one barrier layer (132a) which is arranged on a side of the contact layer (131) facing away from the optoelectronic semiconductor chip (11), - the electrical connection point (13a) comprises a protective layer (133) which is arranged on the side of the at least one barrier layer (132a, 132b) facing away from the contact layer (131), - the layers of the electrical connection point (13a) are arranged one above the other along a stacking direction, - the stacking direction is perpendicular to a main extension plane of the optoelectronic semiconductor chip (11), - the electrical connection point (13a) has two or more pairs of the barrier layer (132a) and an intermediate layer (132b) which are directly adjacent to one another and which are arranged stacked one above the other between the contact layer (131) and the protective layer (133), and - the stack of pairs of the barrier layer (132a) and the intermediate layer (132b) is compressively stressed.

Description

[0001] The document WO 2014 / 097644 A1 describes a housing for electronic components and a method for its production.

[0002] The document JP 2013-243254 A describes a light-emitting semiconductor element.

[0003] One problem to be solved is to provide an optoelectronic semiconductor component that can be manufactured particularly cost-effectively. Another problem to be solved is to provide an optoelectronic semiconductor component that is characterized by increased operational reliability.

[0004] An optoelectronic semiconductor component is specified. The optoelectronic semiconductor component is, for example, a radiation-emitting or a radiation-detecting semiconductor component. For example, the optoelectronic semiconductor component can be a light-emitting diode or a photodiode. In particular, it is possible for the optoelectronic semiconductor component to be a so-called "semiconductor chip-in-a-frame" component. Such a component is described, for example, in the publication DE 10 2012 215 524 A1, the disclosure content of which is incorporated herein by reference. In particular, a "semiconductor chip-in-a-frame" component has a molded body, which can be formed, for example, with a silicone and / or epoxy resin.

[0005] According to at least one embodiment of the optoelectronic semiconductor component, the optoelectronic semiconductor component comprises at least one optoelectronic semiconductor chip. The optoelectronic semiconductor chip is, for example, a light-emitting diode chip or a photodiode chip. This means that during operation, the optoelectronic semiconductor chip is provided for generating or detecting electromagnetic radiation, for example, light. The optoelectronic semiconductor chip can comprise a carrier, which is, for example, a growth substrate or a carrier body different from a growth substrate. Furthermore, the optoelectronic semiconductor chip can contain epitaxially grown layers comprising at least one active zone in which, during operation of the optoelectronic semiconductor chip, the electromagnetic radiation to be generated is generated or the electromagnetic radiation to be detected is detected.A reflective layer formed with a reflective material such as Al or Ag can be arranged between the carrier body and the epitaxially grown layers.

[0006] Furthermore, it is possible for the optoelectronic semiconductor component to comprise several optoelectronic semiconductor chips, even of different types. For example, the optoelectronic semiconductor component may also comprise optoelectronic semiconductor chips that generate electromagnetic radiation in different spectral ranges during operation.

[0007] According to at least one embodiment of the optoelectronic semiconductor component, the optoelectronic semiconductor component comprises at least one electrical connection point for contacting the optoelectronic semiconductor chip. The electrical connection point is located on an outer side of the optoelectronic semiconductor component and is thus accessible and contactable from the outside. The electrical connection point is formed with an electrically conductive material and is electrically conductively connected to the n-side or the p-side of the associated optoelectronic semiconductor chip. During operation of the optoelectronic semiconductor chip, it is then contacted on the n-side or the p-side via the electrical connection point.

[0008] According to at least one embodiment of the optoelectronic semiconductor component, the electrical connection point covers the optoelectronic semiconductor chip on its underside at least in places. This means that the electrical connection point can be in direct contact with a component of the optoelectronic semiconductor chip, for example with the carrier of the semiconductor chip or the epitaxial layers of the semiconductor chip. The electrical connection point can be formed as a layer that covers the optoelectronic semiconductor chip on its underside at least in places. For example, the electrical connection point covers at least 10% of the bottom area of ​​the optoelectronic semiconductor chip on its underside, in particular at least 25% of the bottom area. It is furthermore possible for the electrical connection point to completely cover the optoelectronic semiconductor chip on its underside.In this case, the current supply via the electrical connection point into the semiconductor chip is particularly uniform, i.e. the optoelectronic semiconductor chip is supplied with current particularly evenly over its surface and the heat generated during operation of the optoelectronic semiconductor chip can be dissipated particularly efficiently via the electrical connection point.

[0009] According to at least one embodiment of the optoelectronic semiconductor component, the electrical connection point comprises a contact layer facing the optoelectronic semiconductor chip. The contact layer is selected such that it adheres particularly well to the optoelectronic semiconductor chip. Furthermore, it is selected such that it remains chemically and mechanically stable even at elevated temperatures, such as those that occur during a soldering process, so that no liquefaction of the contact layer occurs and no solid-state diffusion processes of material from the contact layer into the optoelectronic semiconductor chip occur within the manufacturing tolerance.

[0010] For example, if the contact layer borders a component of the optoelectronic semiconductor chip that is formed with silicon or germanium, or at least contains one of these materials, aluminum proves particularly advantageous for forming the contact layer. This means that the contact layer can then, in particular, contain aluminum or consist of aluminum. The contact layer is preferably free of platinum and / or gold.

[0011] The contact layer can also be designed to reflect electromagnetic radiation to be generated or detected in the optoelectronic semiconductor chip, so that the optical efficiency of the optoelectronic semiconductor component can also be increased due to the contact layer.

[0012] According to at least one embodiment of the optoelectronic semiconductor component, the electrical connection point comprises at least one barrier layer arranged on a side of the contact layer facing away from the optoelectronic semiconductor chip. The barrier layer is formed from materials selected such that they react essentially only to form adhesion with the adjacent layers, for example, the contact layer, and otherwise no chemical reaction occurs, in particular with the materials of the optoelectronic semiconductor chip. The barrier layer is formed, for example, from the following materials, i.e., it can consist of at least one of the materials or contain at least one of the materials: Ti, W, TiW, TiN, TiWN, WN.

[0013] The electrical connection point can comprise multiple barrier layers, which can be formed from the same or different materials. Intermediate layers made from a different material can be inserted between the barrier layers, which can prevent through-defects in the stack of barrier layers, making the stack of barrier layers particularly dense.

[0014] The at least one barrier layer is selected such that it enters into no or hardly any chemical reactions with a connecting material with which the optoelectronic semiconductor component is attached to its destination and electrically contacted, and inhibits or prevents diffusion of connecting material in the optoelectronic semiconductor chip.

[0015] According to at least one embodiment of the optoelectronic semiconductor component, the electrical connection point comprises a protective layer arranged on the side of the at least one barrier layer facing away from the contact layer. The protective layer is a sealing layer that seals off the electrical connection point on its side facing away from the optoelectronic semiconductor chip. This means that the protective layer forms, at least in places, an outer surface of the electrical connection point. The protective layer thus serves as a connection layer to a connecting material with which the optoelectronic semiconductor component is attached to the intended location and electrically connected.

[0016] The material of the protective layer is selected such that it reacts with an adjacent layer of the electrical connection point, forming particularly good adhesion to this layer and being stable against degradation processes, which facilitates the storage of the optoelectronic semiconductor component prior to its attachment at its destination. For example, the protective layer can be formed with gold or consist of gold. However, the reaction of the protective layer with an adjacent layer does not result in material from the adjacent layer being able to diffuse through the protective layer. In particular, prior to the optoelectronic semiconductor component being attached at its destination, such penetration of the protective layer by the material of adjacent layers does not occur.

[0017] According to at least one embodiment of the optoelectronic semiconductor component, the optoelectronic semiconductor component comprises an optoelectronic semiconductor chip and a first connection point for contacting the optoelectronic semiconductor chip, wherein the electrical connection point covers the optoelectronic semiconductor chip on its underside at least in places, the electrical connection point comprises a contact layer facing the optoelectronic semiconductor chip, the electrical connection point comprises at least one barrier layer arranged on a side of the contact layer facing away from the optoelectronic semiconductor chip, and the electrical connection point comprises a protective layer arranged on the side of the at least one barrier layer facing away from the contact layer.

[0018] The optoelectronic semiconductor component described here is based, among other things, on the consideration that SMT (surface mount technology) processes are often used for the further processing of optoelectronic semiconductor components. In these processes, the optoelectronic semiconductor component is heated to temperatures of 250°C and more, for example, for a soldering process, in particular a reflow soldering process. For such processes, it is advantageous if the connecting agent, such as a solder paste, is reliably separated from the optoelectronic semiconductor chip. The optoelectronic semiconductor component described here is based, among other things, on the idea that the electrical connection point, supplemented by appropriate functional layers, can be used for this separation.

[0019] Alternatively, instead of the electrical connection point described here, which comprises multiple functional layers, it would be possible to use a thick, particularly electroplated metal layer, for example, made of copper or nickel, which reacts only slowly with the connecting material. Due to this slow reaction, the reaction front does not penetrate to the optoelectronic semiconductor chip even after repeated heating of the optoelectronic semiconductor component during soldering. However, such thick metal layers, which, for example, have a thickness of at least 5 µm, have the disadvantage that they significantly increase the component height and are also complex and expensive to manufacture.

[0020] Surprisingly, it has been found that the described structure of the electrical connection point as a layer stack of several functional layers enables a particularly thin electrical connection point that reliably protects against diffusion processes during the connection of the optoelectronic semiconductor component at its destination. In particular, an electrical connection point described here is also stable during a "Resistance to Soldering Heat (RTSH) test," in which the optoelectronic semiconductor component is heated three or more times to temperatures of 250 °C or higher for times of nine seconds or more. For example, in such a test, the optoelectronic semiconductor component is heated three times to temperatures of 260 °C for ten seconds.

[0021] An optoelectronic semiconductor component described here is characterized by material savings due to the possibility of using a thinner electrical connection point and is therefore particularly cost-effective to manufacture. Furthermore, an electroplating step for producing the electrical connection point can be avoided, which simplifies the manufacturing process and also contributes to cost reduction. Furthermore, an electrical connection point of an optoelectronic semiconductor component described here ensures reliable connectivity, in particular solderability, of the optoelectronic semiconductor component at the target location, making the optoelectronic semiconductor component particularly reliable in operation.

[0022] According to at least one embodiment of the optoelectronic semiconductor component, at least the barrier layers or the entire electrical connection point are produced exclusively by physical vapor deposition. This means that at least the barrier layers or, preferably, all layers of the electrical connection point are produced by physical vapor deposition. The layers can be produced using methods such as thermal evaporation, electron beam evaporation, laser beam evaporation, arc evaporation, molecular beam epitaxy, sputtering, ion beam-assisted deposition, ion plating, or the like. The electrical connection point is, in particular, free of galvanically produced layers.

[0023] The feature that the electrical connection point is manufactured at least partially or exclusively by physical vapor deposition is clearly detectable on the finished optoelectronic semiconductor component. This feature is therefore not a process feature, but rather a physical feature that can be detected on the finished product using conventional semiconductor analysis techniques. In other words, all layers of the electrical connection point are PVD (physical vapor deposition) layers, which are manufactured by physical vapor deposition.

[0024] Such an electrical connection point can be manufactured particularly easily and cost-effectively, as a plating step for producing the electrical connection point is eliminated. Furthermore, the PVD layers of the electrical connection point can be made particularly thin, enabling a particularly thin electrical connection point.

[0025] According to at least one embodiment of the optoelectronic semiconductor component, the optoelectronic semiconductor component comprises a molded body formed with an electrically insulating material and surrounding the optoelectronic semiconductor chip at least in places, wherein the electrical connection point covers the molded body at least in places on its underside. The optoelectronic semiconductor chip is completely surrounded by the molded body, for example, laterally. This means that in the lateral direction, the optoelectronic semiconductor chip can directly or indirectly border the molded body. The lateral directions are those directions that run parallel to a main extension plane of the optoelectronic semiconductor component.The lateral directions are perpendicular to a vertical direction, the vertical direction being, for example, parallel or substantially parallel to the stacking direction of the layers of the electrical connection point.

[0026] The molded body can comprise a matrix material formed from a plastic such as silicone, epoxy, or a silicone-epoxy hybrid material. Reflective and / or absorbing and / or scattering particles can be incorporated into the matrix material, which reflect, absorb, or scatter any electromagnetic radiation, particularly light. In this way, the molded body can be colored and / or reflective and / or absorbent.

[0027] The molded body can be flush or substantially flush with the optoelectronic semiconductor chip, at least on the underside of the optoelectronic semiconductor chip facing the electrical connection point. Furthermore, it is possible for the optoelectronic semiconductor chip and the molded body to be flush or substantially flush with each other on the upper side facing away from the underside. "Substantially flush" here and below means that the optoelectronic semiconductor chip only projects beyond the molded body at a height, or is only projected beyond by the molded body at a height that corresponds to a maximum of 15% of the thickness of the semiconductor chip in the vertical direction.

[0028] The electrical connection point can extend from the semiconductor chip in lateral directions, at least in places, to the molded body, so that it partially covers the molded body on its underside. It is possible for the electrical connection point to extend without interruption from a region in which it covers the optoelectronic semiconductor chip to a region in which it covers the molded body. In the region of the optoelectronic semiconductor chip, the electrical connection point is mechanically and electrically conductively connected to the semiconductor chip; in the region of the molded body, the electrical connection point is mechanically connected to the molded body.

[0029] In particular, an electrical connection point produced using a PVD process can extend into regions where the molded body is located. In this way, the electrical connection point can be designed with a particularly large surface area, which enables a more reliable connection of the electrical connection point to the remaining components of the optoelectronic semiconductor component, on the one hand, and to the target location where the optoelectronic semiconductor component is attached and connected, on the other. Furthermore, a design of the electrical connection point such that the molded body is also partially covered by it can contribute to improved heat dissipation during operation of the optoelectronic semiconductor component.

[0030] In particular, the contact layer of the electrical connection point is selected to ensure particularly good adhesion to the material of the molded body. Aluminum, in particular, has proven to be a material that can be bonded to the molded body with particularly good adhesion.

[0031] According to at least one embodiment of the optoelectronic semiconductor component, the electrical connection point is partially in direct contact with the optoelectronic semiconductor chip and / or the molded body. Due to the direct contact of the electrical connection point, which is mediated in particular by the contact layer of the electrical connection point, with the optoelectronic semiconductor chip and / or the molded body, the mechanical adhesion between the electrical connection point and the remaining components of the optoelectronic semiconductor component is increased.

[0032] In particular, it is possible for the electrical connection point to be in direct contact with both the optoelectronic semiconductor chip and the molded body, such that the contact layer directly borders both components and extends in lateral directions from the semiconductor chip to the molded body. It is particularly advantageous if the molded body and the optoelectronic semiconductor chip are flush or substantially flush with each other on the underside of the optoelectronic semiconductor chip facing the electrical connection point.

[0033] According to at least one embodiment of the optoelectronic semiconductor component, the electrical connection point has two, in particular three or more pairs of the barrier layer and an intermediate layer, which directly adjoin one another and are arranged stacked one above the other between the contact layer and the protective layer. This means that the electrical connection point comprises at least three barrier layers, which may, for example, be identically formed. An intermediate layer formed from a material different from the material of the barrier layer may adjoin the side of each barrier layer facing away from the contact layer.The multilayered structure of the barrier layers and the intermediate layers as a stack makes it possible to prevent through-defects, for example, at grain boundaries or growth boundaries of the layers, or in the area between the semiconductor chip and the mold body, by renucleating the barrier layer at the intermediate layer. For example, the intermediate layer can be formed with materials such as Pt, Ni, NiV, or Au, or consist of one of these materials.

[0034] For example, the following layer structures have proven particularly advantageous for the electrical connection point, whereby the specified layer thickness of the layers is measured in the vertical direction and can vary by + / - 20%, in particular by + / - 10%, around the specified value: 1. Example: - contact layer made of Al with a layer thickness of 100 nm to 200 nm; - N times * (barrier layer made of Ti with a layer thickness of 80 nm and intermediate layer made of Pt or Ni with a layer thickness of 30 nm), where N>1, in particular N=3 or N=5; - Protective layer made of Au with a layer thickness of 50 nm to 100 nm. 2. Example: - contact layer made of Al with a layer thickness of 100 nm to 200 nm; - N times * (barrier layer made of TiWN with a layer thickness of 100 nm and intermediate layer made of Pt with a layer thickness of 30 nm), where N>1, in particular N=3 or N=5; - Protective layer made of Au with a layer thickness of 50 nm to 100 nm.

[0035] The specified layers can be directly adjacent to each other and the connection point can be free of other, unlisted layers and thus consist of the specified layers.

[0036] According to at least one embodiment of the optoelectronic semiconductor component, the stack of pairs of the barrier layer and the intermediate layer and / or the entire electrical connection point is compressively stressed, in particular in lateral directions. This compressive stress can be achieved by selecting the materials and layer thicknesses and / or selecting the parameters of the deposition processes used to produce the layers, as exemplified in the examples above. With such a compressively stressed stack of pairs of the barrier layer and the intermediate layer, tensile stress at the electrical connection point can be avoided. In the event of mechanical damage to the electrical connection point at one point, the defect created thereby is, to a certain extent, compressed by the compressive stress or at least cannot break open further.This achieves a particularly good barrier quality of the stack of pairs of the barrier layer and the intermediate layer against diffusion of connecting material, in particular solder material.

[0037] According to at least one embodiment of the optoelectronic semiconductor component, the electrical connection point has a thickness of at least 250 nm and at most 2000 nm. This is possible in particular because the electrical connection point is produced exclusively using a PVD process, i.e., all layers of the electrical connection points are PVD layers. This also applies to the intermediate layers, which can be arranged in the stack of pairs of barrier layers and intermediate layers.

[0038] According to at least one embodiment of the optoelectronic semiconductor component, the optoelectronic semiconductor component comprises at least one further electrical connection point for contacting the optoelectronic semiconductor chip, which is configured identically to the electrical connection point. For example, the further electrical connection point can also be in indirect or direct contact with the underside of the associated optoelectronic semiconductor chip and, if appropriate, the molded body. In this case, the optoelectronic semiconductor chip is, for example, a flip chip, which is already designed to be surface-mountable.

[0039] Alternatively, it is possible for the optoelectronic semiconductor component, according to at least one embodiment, to comprise a via that extends partially through the molded body and is electrically conductively connected to the optoelectronic semiconductor chip. The further electrical connection point can then cover the via on its underside at least partially or even completely. Overall, the electrical connection point and the further electrical connection point are arranged on an underside of the optoelectronic semiconductor component at a distance from one another in lateral directions, so that the optoelectronic semiconductor component can be surface-mounted via these two electrical connection points.

[0040] The further electrical connection point can be in direct contact with the through-hole plating and / or the molded body in some places.

[0041] An optoelectronic arrangement is further specified. The optoelectronic arrangement comprises at least one optoelectronic semiconductor component as described here. This means that all features described for the optoelectronic semiconductor component are also described for the optoelectronic arrangement, and vice versa. The optoelectronic arrangement further comprises a connection carrier, which can be a printed circuit board, for example. The at least one optoelectronic semiconductor component is mechanically fastened to the at least one connection carrier and electrically conductively connected, for which purpose a connecting material is arranged between the connection carrier and the optoelectronic semiconductor component, wherein the connecting material is in direct contact with the protective layer of the electrical connection point and optionally the further electrical connection point.The connecting material is, for example, a solder material, such as a solder paste.

[0042] An optoelectronic semiconductor component described here can be connected to the circuit board to form the optoelectronic arrangement, for example, via a reflow soldering process, without damaging the optoelectronic semiconductor chip due to the solder material. This is possible in particular due to the design of the electrical connection point and, if applicable, the additional electrical connection point described here.

[0043] Furthermore, a method for producing an optoelectronic semiconductor component is specified. An optoelectronic semiconductor component described herein can be produced by means of the method, so that all features disclosed for the optoelectronic semiconductor component are also disclosed for the method, and vice versa.

[0044] According to at least one embodiment of the method, at least the barrier layers or the entire electrical connection point of the optoelectronic semiconductor component are produced exclusively by physical vapor deposition. This means that all layers of the electrical connection point, such as the contact layer, the barrier layer, the intermediate layer, and the protective layer, are produced using a PVD process. Different PVD processes can be used to produce different layers. However, it is particularly preferred that all layers of the electrical connection point be produced using the same PVD process in the same system. This enables particularly simple and thus cost-effective production of the electrical connection point.

[0045] According to at least one embodiment of the method, the further electrical connection point is produced exclusively by means of physical vapor deposition. The further electrical connection point can be produced simultaneously with the electrical connection point in the same process steps, which simplifies the overall production of the optoelectronic semiconductor component.

[0046] In the following, the optoelectronic semiconductor component described here, the optoelectronic arrangement described here and the method described here for producing an optoelectronic semiconductor component are explained in more detail using exemplary embodiments and the associated figures. The Fig. 1 and Fig. 2 show optoelectronic semiconductor components described here as well as optoelectronic arrangements described here in embodiments of these in schematic sectional views.

[0047] Identical, similar, or functionally identical elements are provided with the same reference numerals in the figures. The figures and the relative sizes of the elements depicted in the figures are not to be considered to scale. Rather, individual elements may be exaggerated for clarity and / or clarity.

[0048] The Fig. 1 shows an embodiment of an optoelectronic arrangement described here with an embodiment of an optoelectronic semiconductor component 1 described here as a sectional view in an enlarged detail.

[0049] The optoelectronic semiconductor component 1 comprises an optoelectronic semiconductor chip 11. The optoelectronic semiconductor chip 11 is, for example, a light-emitting diode chip. The optoelectronic semiconductor chip 11 comprises a chip carrier 110 and epitaxial layers 111. The chip carrier 110 is electrically conductive in this case. For example, the chip carrier 110 is not a growth substrate in this case, but rather a carrier body for the epitaxial layers 111, which was connected to the epitaxial layers 111 before or after the growth substrate was removed.

[0050] The carrier 110 is formed, for example, with silicon or germanium.

[0051] The optoelectronic semiconductor chip is surrounded laterally by the molded body 12. The molded body 12 can, for example, be formed with a plastic material as the matrix material, which is filled with scattering or reflective particles, so that the molded body 12 is reflective of electromagnetic radiation generated in the optoelectronic semiconductor chip 11.

[0052] At the bottom of the optoelectronic semiconductor chip 11, in the embodiment of the Fig. 1 the molded body 12 and the optoelectronic semiconductor chip 11 are flush with each other.

[0053] The electrical connection point 13a extends along the underside of the optoelectronic semiconductor chip 11 and the molded body. The electrical connection point 13a comprises a contact layer 131, a layer stack of barrier layers 132a and intermediate layers 132b, and a protective layer 133 arranged on the underside of the layer stack of barrier layers 132a and intermediate layers 132b facing away from the contact layer 131.

[0054] All layers of the connection point 13a are produced using a PVD process. For example, the contact layer 131 is formed with aluminum and has a thickness of approximately 100 nm to 200 nm. The barrier layers 132a are each formed with Ti, and the intermediate layers 132b are each formed with Pt. The barrier layers 132a have a thickness of 80 nm, for example, and the intermediate layers 132b each have a thickness of 30 nm. On the underside, the connection point 13a is closed off by the protective layer 133, which is formed, for example, with gold and has a thickness of approximately 50 nm to 100 nm.

[0055] The optoelectronic semiconductor component formed in this way is mechanically and electrically conductively connected to the connection carrier 3, which is, for example, a circuit board, via the connecting material 2, which is formed, for example, with a solder paste.

[0056] In the embodiment of the Fig. 1, the electrical connection point 13a extends on the underside from the semiconductor chip 11 to the molded body 12 and thus covers these two components of the optoelectronic semiconductor component 1.

[0057] In connection with the Fig. 2, a further embodiment of an optoelectronic arrangement described here with an embodiment of an optoelectronic semiconductor component 1 described here is described in more detail.

[0058] The optoelectronic semiconductor component 1 in the embodiment of the Fig. 2 again shows an optoelectronic semiconductor chip 11, which is embedded laterally in a molded body 12. The via 14, which is formed with an electrically conductive material, extends through the molded body 12 from its top side to its bottom side, laterally spaced from the semiconductor chip 11. The via 14 is electrically conductively connected to the semiconductor chip 11 on the top side of the optoelectronic semiconductor component 1 via the contact element 15, which is designed, for example, as a metal layer. On the underside of the optoelectronic semiconductor component 1, the further electrical connection point 13b, which can be designed identically to the first electrical connection point 13a, is arranged laterally spaced from the electrical connection point 13a. The further electrical connection point 13b is in direct contact, for example, with the via and the adjacent molded body 12.The electrical connection point 13a and the further electrical connection point 13b can be designed as described above. Both electrical connection points 13a, 13b are mechanically and electrically connected to the connection carrier 3, for example a circuit board, via a connecting material 2, for example a solder paste, so that the optoelectronic semiconductor component 1 is surface-mounted on the connection carrier 3.

[0059] In contrast to the embodiment of the Fig. 1, the electrical connection point 13a extends in the embodiment of the Fig. 2 is not formed on the underside of the molded body 12, but is only formed in the area of ​​the semiconductor chip 11, whereby it can also completely cover the underside thereof, unlike as shown. However, in the embodiment of the Fig.2, it is possible for the electrical connection point 13a to extend both over the semiconductor chip 11 on its underside and over the molded body 12.

[0060] Overall, the illustrated optoelectronic semiconductor components 1 can be manufactured using a method described here, wherein the electrical connection point 13a and optionally the further electrical connection point 13b are each manufactured using a PVD method. List of reference symbols 1 optoelectronic semiconductor component 2 Connecting material 3 connection supports 11 optoelectronic semiconductor chip 12 molded bodies 13a junction 13b further junction 14 Through-hole plating 15 Contact element 110 chip carriers 111 epitaxial layers 131 Contact layer 132a Barrier layers 132b Intermediate layer 133 Protective layer

Claims

[1] Optoelectronic semiconductor component (1) with - an optoelectronic semiconductor chip (11), and - an electrical connection point (13a) for contacting the optoelectronic semiconductor chip (11), wherein - the electrical connection point (13a) covers the optoelectronic semiconductor chip (11) at least in places on its underside, - the electrical connection point (13a) comprises a contact layer (131) facing the optoelectronic semiconductor chip (11), - the electrical connection point (13a) comprises at least one barrier layer (132a) which is arranged on a side of the contact layer (131) facing away from the optoelectronic semiconductor chip (11), - the electrical connection point (13a) comprises a protective layer (133) which is arranged on the side of the at least one barrier layer (132a, 132b) facing away from the contact layer (131), - the layers of the electrical connection point (13a) are arranged one above the other along a stacking direction, - the stacking direction is perpendicular to a main extension plane of the optoelectronic semiconductor chip (11), - the electrical connection point (13a) has two or more pairs of the barrier layer (132a) and an intermediate layer (132b) which are directly adjacent to one another and which are arranged stacked one above the other between the contact layer (131) and the protective layer (133), and - the stack of pairs of the barrier layer (132a) and the intermediate layer (132b) is compressively stressed. [2] Optoelectronic semiconductor component (1) according to the preceding claim, in which at least all barrier layers (132a) are produced exclusively by means of physical vapor deposition. [3] Optoelectronic semiconductor component (1) according to the preceding claim, in which the entire electrical connection point (13a) is produced exclusively by means of physical vapor deposition. [4] Optoelectronic semiconductor component (1) according to one of the preceding claims with a molded body (12) which is formed with an electrically insulating material and which surrounds the optoelectronic semiconductor chip laterally at least in places, wherein the electrical connection point (13a) covers the molded body (12) on its underside at least in places. [5] Optoelectronic semiconductor component (1) according to the preceding claim, in which the electrical connection point (13a) extends without interruption from a region in which it covers the optoelectronic semiconductor chip (11) to a region in which it covers the molded body (12). [6] Optoelectronic semiconductor component (1) according to one of the preceding claims, in which the electrical connection point (13a) is in direct contact with the optoelectronic semiconductor chip (11) and / or the molded body (12) in some places. [7] Optoelectronic semiconductor component (1) according to one of the preceding claims, in which the electrical connection point (13a) has two or more pairs of the barrier layer (132a) and an intermediate layer (132b) which are directly adjacent to one another and which are arranged stacked one above the other between the contact layer (131) and the protective layer (133). [8] Optoelectronic semiconductor component (1) according to the preceding claim, in which the stack of pairs of the barrier layer (132a) and the intermediate layer (132b) is compressively stressed. [9] Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein the electrical connection point (13a) has a thickness of at least 250 nm and at most 2000 nm. [10] Optoelectronic semiconductor component (1) according to one of the preceding claims with a further electrical connection point (13b) for contacting the optoelectronic semiconductor chip (11), which is identical to the electrical connection point (13a). [11] Optoelectronic semiconductor component (1) according to claim 4 with a through-plating (14) which extends partially through the shaped body (12), wherein the further electrical connection point (13b) partially covers the through-plating (14). [12] Optoelectronic semiconductor component (1) according to claim 11, in which the further electrical connection point (13b) is in direct contact with the through-plating (14) and / or the shaped body (12) in places. [13] Optoelectronic device with - a connection carrier (3), and - at least one optoelectronic semiconductor component (1) according to one of the preceding claims, wherein - a connecting material (2) is arranged between the connection carrier (3) and the optoelectronic semiconductor component (1), wherein the connecting material (2) is in direct contact with the protective layer (133). [14] Method for producing an optoelectronic semiconductor component according to one of the preceding claims, wherein the electrical connection point (13a) is produced exclusively by means of physical vapor deposition. [15] Method according to the preceding claim, wherein the further electrical connection point (13b) is produced exclusively by means of physical vapor deposition.

Images