Semiconductor device

Abstract

Semiconductor device comprising: - a metal body (30b; 30m, 30n, 30o; 30t, 30u, 30v) in which a through hole (30c) is formed; - a socket (30a) covering the metal body (30b; 30m, 30n, 30o; 30t, 30u, 30v) without closing the through hole (30c); - at least one connecting connection (30d), - which has a first end connected to the metal body (30b; 30m, 30n, 30o; 30t, 30u, 30v), and - which has a second end which is exposed to the outside of the socket (30a); - a control board (10) having a metal structure (10B) and a circuit structure (10A); and - a semiconductor chip (20) having a control terminal (TG) connected to the circuit structure (10A) via the through-hole (30c) without being in contact with the metal body (30b; 30m, 30n, 30o; 30t, 30u, 30v), wherein: - the second end of the at least one connection terminal (30d; 30g; 30h, 30i, 30j, 30k; 30p, 30q, 30r, 30s; 30w, 30x, 30y) is connected to the metal structure (10B) and - the socket (30a) is present opposite only one side of the control board (10).

Description

Area

[0001] The present invention relates to a semiconductor device used, for example, in a controller of a large amount of power. background

[0002] For example, in a semiconductor device called a power semiconductor device that handles a large amount of power, a control terminal is provided in the semiconductor device. The control terminal is used to apply a voltage to a gate and extract a signal for current detection and temperature detection. To connect the control terminal to a control board, the control terminal must be a certain length. Because the control terminal is bare, it is susceptible to external noise.

[0003] In a power semiconductor device or the like that requires high reliability, it is necessary to directly connect the control terminal to the control board and solder these two components so that they are securely fixed to each other. Removable components for connection that can be easily removed, such as a socket or the like, which is commonly used as an electrical connection, are not preferable. In view of this, a relatively long portion of the control terminal from the semiconductor device to the control board is left in a bare state. The externally exposed control terminal is susceptible to external noise, which may cause malfunction or false detection of a signal. It should be noted that external noise includes, for example, noise from a semiconductor device or noise from load wiring.

[0004] Patent Literature PTL 1 discloses a socket for an electronic component that includes a shield. Patent Literature PTL 2 discloses a structure in which a terminal is directly connected to a substrate, and a shielding potential is brought into contact with the terminal to provide a shielding effect. State of the artPatent literature PTL 1: JP 2013- 239 278 A PTL 2: JP 2004- 200 235 A

[0005] JP 2003-046058 A relates to a semiconductor device in which noise is prevented from being applied to a control terminal. Cylindrical control terminals, vertically stretched into a common pattern, are arranged on the common pattern. A gate and a current detection electrode of an IGBT element are connected to terminal boards arranged on base portions of the control terminals, respectively, via metal wires. The control terminals have structures in which a columnar or prism-shaped gate electrode and a current detection terminal are made into central conductors, the peripheries are enclosed with insulating members, and the outer peripheries of the insulating members are connected to control emitter terminals.The gate electrode and the current detection terminal protrude from end faces of the insulating members and the control emitter terminals arranged peripherally and are electrically connected to a control substrate arranged above a relay terminal substrate. SummaryTechnical problem

[0006] The electronic component socket disclosed in Patent Literature PTL 1 cannot be used for power semiconductor devices or the like that require high reliability due to contact resistance or vibration resistance, which has been a problem so far. In the technique disclosed in Patent Literature PTL 2, since the shield potential must be matched to the potential of any of the terminals, noise voltage is generated due to the influence of wiring inductance, making it difficult to provide stable shielding.For example, if a shield is based on the emitter terminal as the reference, a large current flows between the gate and the emitter when the gate is turned on and off, so there is a risk that the noise voltage may sneak into the shield due to the influence of the inductance of the emitter wiring on the control board side rather than the control terminal. If the shield is provided with the cathode terminal used as the reference, the inductor can also be directly connected to the sensor circuit of the control board to stably measure the potential between the anode and cathode, so that the cathode is not directly connected to the GND potential, making it difficult to achieve a stable shielding effect.

[0007] The present invention has been made to solve the problems described above, and it is an object of the present invention to provide a semiconductor device capable of reducing the influence of noise. Means to solve the problems

[0008] The object underlying the invention is achieved in a semiconductor device according to the invention with the features of claim 1. Advantageous further developments are the subject of the respective dependent claims.

[0009] A semiconductor device according to this invention comprises a metal body in which a through-hole is formed, a socket that covers the metal body without closing the through-hole, a connection terminal that has a first end connected to the metal body and a second end exposed to the outside of the socket, a control board that has a metal pattern and a circuit pattern, and a semiconductor chip that has a control terminal that is connected to the circuit pattern via the through-hole without being in contact with the metal body, wherein the second end of the connection terminal is connected to the metal pattern and the socket is provided opposite only one side of the control board.

[0010] Other features are disclosed below. Advantageous effects of the invention

[0011] According to the present invention, since the metal body used for shielding the control terminal is bonded to the metal structure of the control board, a semiconductor device in which the influence of noise is reduced can be provided. Short description of the drawings Fig. 1 is a configuration diagram of the semiconductor device according to Embodiment 1. Fig. 2 is a perspective view of the shielding structure and the control terminals. Fig. 3 is a cross-sectional view of the semiconductor device. Fig. 4 is another cross-sectional view of the semiconductor device. Fig. 5 is a perspective view of a shield structure of the semiconductor device according to Embodiment 2. Fig. 6 is a cross-sectional view of the semiconductor device according to Embodiment 2. Fig. 7 is a perspective view of a shield structure of the semiconductor device according to Embodiment 3. Fig. 8 is a cross-sectional view of the semiconductor device according to Embodiment 3. Fig. 9 is a perspective view of the shielding structure of the semiconductor device according to Embodiment 4. Fig. 10 is a perspective view of the shielding structure of the semiconductor device according to Embodiment 5. Fig. 11 is a cross-sectional view of the semiconductor device according to Embodiment 5. Fig. 12 is a perspective view of the shielding structure of the semiconductor device according to Embodiment 6. Fig. 13 is a perspective view of the shielding structure of the semiconductor device according to Embodiment 7. Fig. 14 is a cross-sectional view of the semiconductor device according to Embodiment 7. Fig. 15 is a cross-sectional view of the semiconductor device according to Embodiment 8. Fig. 16 is a cross-sectional view of the semiconductor device according to Embodiment 9. Description of embodiments

[0012] A semiconductor device according to an embodiment of the present invention will be described with reference to the drawings. The same or corresponding components are assigned the same reference numerals, and a repetitive description will be omitted. Embodiment 1

[0013] Fig. 1 is a configuration diagram of the semiconductor device according to Embodiment 1. This semiconductor device includes a control board 10. The control board 10 includes, for example, a substrate, a plurality of devices forming a circuit, a circuit pattern connecting the devices, and a metal pattern. Fig. 1 shows that the control board 10 includes a drive circuit 12, a sensor circuit 14 and a wiring inductance 16.

[0014] The control board 10 is connected to a semiconductor chip 20 through control terminals TG, TS, TE, TA, and TK. An insulated gate bipolar transistor (IGBT) 20a and a diode 20b are formed in the semiconductor chip 20. A device of another type may be formed in the semiconductor chip 20. The semiconductor chip 20 includes control terminals TG, TS, TE, TA, and TK extending outward. The control terminals TG, TS, TE, TA, and TK are connected to a gate, a signal terminal, and an emitter of the IGBT 20a, and to an anode and a cathode of the diode 20b, respectively.

[0015] For example, in a power semiconductor device requiring high reliability, it is necessary to connect the bare control terminals TG, TS, TE, TA, and TK to the control board 10, thereby establishing an electrical connection between the control board 10 and the semiconductor chip 20. As a result, the relatively long control terminals TG, TS, TE, TA, and TK are exposed from the semiconductor chip 20 to the control board 10. To protect such control terminals TG, TS, TE, TA, and TK from the influence of external noise, a shielding structure 30 is provided. The shielding structure 30 covers the control terminals TG, TS, TE, TA, and TK.

[0016] Fig. 2 is a perspective view of the shielding structure 30 and the control terminals TG, TS, TE, TA, and TK. The shielding structure 30 includes a metal body 30b in which through holes 30c are formed. Although the material of the metal body 30b is not particularly limited, as long as it is a metal with a shielding effect, it can be, for example, aluminum (Al) or copper (Cu). Five through holes 30c are formed in the metal body 30b, which extend through the metal body 30b in the z-direction.

[0017] The metal body 30b is covered by a socket 30a. The socket 30a covers the metal body 30b without closing the through holes 30c. For example, the socket 30a is brought into contact with the upper and lower surfaces of the metal body 30b. It is preferable that the material of the socket 30a be an insulating material.

[0018] A connection terminal 30d is connected to the metal body 30b. The connection terminal 30d is exposed to the outside of the socket 30a. The connection terminal 30d is a terminal that connects the metal body 30b to the outside. More specifically, the connection terminal 30d is a terminal for connecting the metal body 30b to a portion on the control board 10 to which an electric potential serving as the reference of the shield is to be applied. For example, it is preferable that the connection terminal 30d be connected to a GND potential of the circuit in which a large current does not flow, such as in the sensor circuit, and the influence of noise due to wiring inductance is small.

[0019] A mounting portion 30e is attached to a side surface of the socket 30a. A threaded hole 30f is formed in the mounting portion 30e. Fig. 2 shows that two mounting portions 30e are attached to the socket 30a.

[0020] The control terminals TG, TS, TE, TA, and TK are L-shaped. The control terminals TG, TS, TE, TA, and TK pass through the through-hole 30c without contacting the metal body 30b. The control terminals TG, TS, TE, TA, and TK are not electrically connected to the metal body 30b. The portions of the control terminals TG, TS, TE, TA, and TK extending in the x-direction are connected to the semiconductor chip 20, and their portions extending in the z-direction are connected to the control board 10.

[0021] Fig. 3 is a cross-sectional view of the semiconductor device. Through holes 10a and 10b are provided in the control board 10. A circuit pattern 10A and a metal pattern 10B are formed on the upper surface of the control board 10. The control terminal TK extends through the through hole 10a. The control terminal TK is connected to the circuit pattern 10A by means of a solder 40. The other control terminals are similarly connected to the circuit pattern.

[0022] The connection terminal 30d extends through the through-hole 10b. The connection terminal 30d is connected to the metal pattern 10B by means of a solder 42. Specifically, the connection terminal 30d extends through the through-hole 10b of the control board 10 and is soldered to the metal pattern 10B formed on the upper surface of the control board 10. The metal pattern 10B is a pattern that provides the reference potential of a shield via the metal body 30b. For example, it is preferable that a metal that provides a GND potential of the sensor circuit be provided as the metal pattern 10B.

[0023] Fig. Figure 4 is another cross-sectional view of the semiconductor device. A through-hole 10c is formed in the control board 10. The screws 50, 52 pass through the through-hole 10c and are threadably engaged with the threaded hole 30f of the mounting portion 30e. The control board 10 is fixed to the mounting portion 30e.

[0024] A gate drive signal is transmitted from the drive circuit 12 of the control board 10 to the gate of the IGBT 20a via the control terminal TG. The control board 10 receives a signal current from the control terminal TS, detects the emitter potential of the control terminal TE, detects the current of the diode 20b from the control terminals TA, TK, and thereby monitors the operation of the semiconductor chip 20. Since the control terminals TG, TS, TE, TA, and TK are covered by the metal body 30b, it is possible to reduce the influence of external noise on the control terminals TG, TS, TE, TA, and TK. Specifically, it is possible to reduce induction noise due to external voltage changes or current changes, prevent erroneous operation, and stabilize sensing such as current sensing and temperature sensing.Furthermore, since the connection terminal 30d is integrated with the socket 30a, it is possible to provide positioning of the control terminals TG, TS, TE, TA and TK and the control board 10 by passing the connection terminal 30d through the through hole 10b of the control board 10.

[0025] If the control terminals TG, TS, TE, TA, and TK electrically connected to the control board 10 are covered by the shielding structure 30, it is important to connect the metal body 30b of the shielding structure 30 to a stable electric potential whose noise is less likely to penetrate. In view of this, in Embodiment 1, the connection terminal 30d was connected to the metal structure 10B of the control board 10. Of the metal structures of the control board 10, a stable shielding effect can be obtained by selecting the metal structure with a stable electric potential as the metal structure 10B. Such a metal structure is, for example, a GND structure of the sensor circuit. It is possible to select a metal structure that imparts an electric potential to be the reference potential of the metal body 30b as the metal structure 10B.

[0026] In the process of assembling a semiconductor device, first, the control terminals TG, TS, TE, TA and TK are placed under the through-hole 30c, and the control terminals TG, TS, TE, TA and TK are arranged in the positive z-direction of Fig. 2. At this point, if the through-hole 30c of the metal body 30b is formed into a conical shape whose width becomes largest at its lower end, the control terminals TG, TS, TE, TA, and TK can be easily inserted into the through-hole 30c. The control terminals TG, TS, TE, TA, and TK are further moved in the positive z direction, and thereby the control terminals TG, TS, TE, TA, and TK are passed through the through-hole of the control board 10.

[0027] Next, the control terminals TG, TS, TE, TA, and TK and the circuit pattern are soldered. A plurality of circuit patterns are formed on the control board 10, and one circuit pattern is connected to a control terminal. To prevent the control terminals TG, TS, TE, TA, and TK from being bent when the control terminals are attached or from coming into contact with an adjacent control terminal due to such bending, it is preferable that the inner diameter of the through-hole 30c of the metal body 30b be defined smaller than the inner diameter of the through-hole of the control board 10.

[0028] Various modifications can be made to the semiconductor device according to Embodiment 1 within a range where its features are not lost. For example, the number of control terminals can be changed according to the configuration of the semiconductor chip 20. The modified example described above can also be applied to the semiconductor device according to the following embodiments. It should be noted that the semiconductor device according to the following embodiments has many similarities with the first embodiment, so the differences from Embodiment 1 will be primarily described. Embodiment 2

[0029] Fig. 5 is a perspective view of a shield structure of the semiconductor device according to Embodiment 2. This shield structure 30 includes connection terminals 30d and 30g. The connection terminals 30d and 30g are exposed to the outside on the side surface of the socket 30a. Fig. 6 is a cross-sectional view of the semiconductor device according to Embodiment 2. The connection terminals 30d and 30g pass through the through holes 10b, 10c of the control board 10 and reach above (reach a space above) the control board 10. The connection terminals 30d and 30g are connected to metal patterns 10B and 10C by solders 42, 44. The metal patterns 10B and 10C may be connected to each other on the control board 10.

[0030] When the control terminals TG, TS, TE, TA, and TK and the connection terminals 30d and 30g are soldered to the control board 10, the shielding structure 30 can be positioned with respect to the control board 10 by inserting the connection terminals 30d and 30g into predetermined through holes of the control board 10. Since the shielding structure 30 is stably attached to the control board 10 by means of the connection terminals 30d and 30g, it is also not necessary to attach the shielding structure 30 to the control board 10 using a screw. Therefore, the mounting portions 30e of Fig. 2 can be omitted, which is convenient for miniaturizing the semiconductor device. It should be noted that the above-described effect can be achieved by providing a plurality of connection terminals, so the number of connection terminals is not limited to 2. Embodiment 3

[0031] Fig. 7 is a perspective view of a shield structure 30 of the semiconductor device according to Embodiment 3. The semiconductor device includes connection terminals 30h, 30i, 30j, and 30k connected to the metal body 30b. The connection terminals 30h, 30i, 30j, and 30k are exposed on the upper surface of the socket 30a.

[0032] Fig. Figure 8 is a cross-sectional view of the semiconductor device according to Embodiment 3. The semiconductor chip 20 is provided below the control board 10. The metal patterns 10B and 10C are formed on the lower surface side of the control board 10. All connection terminals 30h, 30i, 30j, and 30k are connected to the metal pattern provided on the lower surface side of the control board 10. Fig. 8 shows that the connecting terminals 30h, 30i are connected to the metal structures 10C and 10B by means of solder metals 46, 48.

[0033] In this way, in Embodiment 3, the connection terminals are soldered to the mounting surface of the shield structure, which is the lower surface of the control board 10. As a result, the connection terminals 30h, 30i, 30j, and 30k can be fixed to the metal structure simultaneously with surface-mounted components that are fixed to the upper surface of the control board 10 by a reflow soldering process. Therefore, the semiconductor device according to Embodiment 3 is suitable for simplifying the manufacturing process. Embodiment 4

[0034] Fig. 9 is a perspective view of the shielding structure 30 of the semiconductor device according to Embodiment 4. Metal bodies 30m, 30n, and 30o are covered by the socket 30a. Connection terminals 30p, 30q, and 30r are connected to the metal bodies 30m, 30n, and 30o, respectively. The control terminals TG, TS, TE, TA, and TK are terminals of the semiconductor chip.

[0035] Part of the control terminal TG is located within the through-hole 30c of the metal body 30m, part of the control terminal TE is located within the through-hole of the metal body 30n, and part of the control terminal TK is located within the through-hole of the metal body 30o. The control terminals TS and TA are not covered by the metal body. The control terminals TS and TA, which are provided next to the control terminals TG, TE, and TK, are unprotected control terminals that extend through the socket 30a without passing through the through-hole of the metal body.

[0036] In Embodiment 4, all control terminals are not collectively enclosed by the metal body, but control terminals on which the influence of noise is to be reduced are individually covered by a metal body. The control terminals on which the influence of noise is to be particularly reduced include, for example, the control terminal TG, which is a gate terminal, the control terminal TS, which is a current sensing terminal, and the control terminal TA, which is an anode terminal. Which of the control terminals is to be covered by the metal body can be determined as needed. Due to the Fig. With the structure illustrated in Figure 9, the material cost of the shielding structure can be reduced compared to a case where all control terminals are covered by the metal body. It is also possible to block noise from an adjacent control terminal. Embodiment 5

[0037] Fig. 10 is a perspective view of the shield structure 30 of the semiconductor device according to Embodiment 5. A connection terminal 30s is provided on the mounting portion 30e and is located within the threaded hole 30f. The connection terminal 30s is connected to the metal body 30b within the socket 30a.

[0038] Fig. 11 is a cross-sectional view of the semiconductor device according to Embodiment 5. A screw 50 is passed through the through hole of the control board 10 and threadedly engaged with the threaded hole 30f of the fixing portion 30e, thereby fixing the control board 10 to the mounting portion 30e. At this point, the screw 50 is brought into contact with the metal structure 10B. The screw 50 is threadedly engaged with the threaded hole 30f of the mounting portion 30e, thereby bringing it into contact with the connection terminal 30s. That is, the head of the screw 50 is in contact with the metal structure 10B, and its shank is in contact with the connection terminal 30s. As a result, the metal structure 10B and the connection terminal 30f are electrically connected.

[0039] The screw 50 and the connection terminal 30s can be brought into contact with each other by providing the connection terminal 30s on the mounting portion 30e. The connection terminal 30s can be electrically connected to the metal pattern 10B by bringing the screw 50 into contact with the metal pattern 10B. According to the semiconductor device of Embodiment 5, since the need to provide a through hole for the connection terminal 30s on the control board 10 can be eliminated, it is possible to increase the degree of freedom of the circuit structure formed on the control board 10.

[0040] In Embodiment 5, the connection terminal 30s is provided within the threaded hole 30f. However, the connection terminal may not be provided in the threaded hole as long as the connection terminal and a screw can be connected to each other. For example, the connection terminal may be formed on the lower surface of the mounting portion 30e, and a nut capable of being properly engaged with the screw 50 may be brought into contact with the connection terminal. Embodiment 6

[0041] Fig. 12 is a perspective view of the shielding structure 30 of the semiconductor device according to Embodiment 6. Metal bodies 30t, 30u, and 30v are provided within the socket 30a. Connection terminals 30w, 30x, and 30y are connected to the metal bodies 30t, 30u, and 30v, respectively. The connection terminals 30w, 30x, and 30y are connected to the metal structure of the control board.

[0042] "G" in Fig. 12 indicates a section where the control terminal TG is inserted, "E" indicates a section where the control terminal TE is inserted, "S" indicates a section where the control terminal TS is inserted, "A" indicates a section where the control terminal TA is inserted, and "K" indicates a section where the control terminal TK is inserted. Accordingly, the metal body 30t covers the control terminal TG and the control terminal TE, the metal body 30u covers the control terminal TS and the control terminal TE, and the metal body 30v covers the control terminal TA and the control terminal TK. All the control terminals are insulated from the metal bodies.

[0043] Thus, in Embodiment 6, the control terminals connected to a pair of signals are covered by a single metal body. Therefore, since the impedances of the output and input channels of the pair of signals are matched, the influence of noise can be reduced, especially when signals are differentially manipulated.

[0044] In Embodiment 6, as the pair of signals, a gate signal for driving the control terminal TG and an emitter current for transmitting the control terminal TE, the signal current for transmitting the control terminal TS and an emitter current for transmitting the control terminal TE, and the anode current flowing in the control terminal TA and a cathode current flowing in the control terminal TK were mentioned. However, combinations not described above can also be adopted as the pair of signals. Generally speaking, a first control terminal and a second control terminal in which a current proportional to the current of the first control terminal flows are provided as the control terminals, the first control terminal and the second control terminal are covered by the metal body, and thereby the above-described effect can be obtained. Embodiment 7

[0045] Fig. 13 is a perspective view of the shielding structure 30 of the semiconductor device according to Embodiment 7. A positioning convex portion 31 is provided on the upper surface of the socket 30a. The convex portion 31 is a projection extending in the axial direction, which is a direction toward the control board 10. Fig. 14 is a cross-sectional view of the semiconductor device according to Embodiment 7. On the lower surface of the control board 10, a concave portion 10E is provided, and the convex portion 31 fits into the concave portion 10E. By inserting the convex portion 31 into the concave portion 10E, it is possible to implement the semiconductor chip 20 at a predetermined location on the control board 10. By providing the convex portion 31, it is also possible to separate the mounting portion 30e from Fig. 2, so that compared to the case of Fig. 2, it is possible to reduce the mounting area of ​​the control board 10. As a result, it is possible to increase the degree of freedom of the circuit structure formed on the control board. Embodiment 8

[0046] Fig. 15 is a cross-sectional view of the semiconductor device according to Embodiment 8. Convex portions 60 and 62 are provided on the upper surface of the socket 30a. The number of convex portions is not particularly limited as long as they are a plurality. The through-hole 30c of the metal body 30b is provided between the convex portions 60 and 62, and the control terminal TK extends through the through-hole 30c. The width of the convex portions 60 and 62 is defined within the range of the width x1. In other words, the distance from the surface on the opposite side of the through-hole 30c of the convex portion 60 to the surface on the opposite side of the through-hole 30c of the convex portion 62 is x1.

[0047] A positioning hole 10i is formed in the control board 10. The width of the positioning hole 10i is x1. The control board 10 indicated by the dashed line is moved in the negative z direction, or the shield structure 30 is moved in the positive z direction, and the control board 10 is placed at the position indicated by the solid line. At this point, by inserting the convex portions 60 and 62 into the positioning hole 10i, the shield structure 30 is implemented at a predetermined location on the control board 10. Due to this structure, it is possible to support positioning at each control terminal and ensure that positional deviation is less likely to occur during assembly. Embodiment 9

[0048] In an embodiment 9, the shielding structure 30 is positioned with respect to the control board 10 according to a method different from that of the embodiment 8. Fig. 16 is a cross-sectional view of the semiconductor device according to Embodiment 9. The metal body 30b has a plurality of metal body convex portions 37, 39 extending upward so that their upper ends are higher than the socket 30a. The widths of the metal body convex portions 37, 39 are defined within the range of the width x1. In other words, the distance from the surface on the opposite side of the through-hole 30c of the metal body convex portion 37 to the surface on the opposite side of the through-hole 30c of the metal body convex portion 39 is x1.

[0049] A positioning hole 10i is formed in the control board 10. The width of the positioning hole 10i is x1. The control board indicated by the dashed line is moved in the negative z direction, or the shielding structure 30 is moved in the positive z direction, and the control board 10 is placed at the position indicated by the solid line. At this point, by inserting the convex portions 37, 39 of the metal body into the positioning hole 10i, the shielding structure 30 is implemented at a predetermined location on the control board 10. Due to this structure, it is possible to support positioning at each control terminal and ensure that positional deviation is less likely to occur during assembly. Furthermore, the convex portions 60 and 62 of Embodiment 8 can be eliminated.

[0050] As the shielding structure 30 of Embodiments 8 and 9, it is possible to adopt the shielding structures described in the context of any of the structures of Embodiments 1 to 7. It should be noted that the features of the semiconductor device according to the embodiments described above can be combined to enhance the effects of the present invention. Description of the symbols

[0051] 10 Control board, 20 Semiconductor chip, 30 Shielding structure, 30a Socket, 30b Metal body, 30c Through holes, 30d Connection terminal, 30e Mounting part area, TG, TS, TE, TA, TK Control terminals

Claims

[1] A semiconductor device comprising: - a metal body (30b; 30m, 30n, 30o; 30t, 30u, 30v) in which a through hole (30c) is formed; - a socket (30a) covering the metal body (30b; 30m, 30n, 30o; 30t, 30u, 30v) without closing the through hole (30c); - at least one connecting connection (30d), - which has a first end connected to the metal body (30b; 30m, 30n, 30o; 30t, 30u, 30v), and - which has a second end which is exposed to the outside of the socket (30a); - a control board (10) having a metal structure (10B) and a circuit structure (10A); and - a semiconductor chip (20) having a control terminal (TG) connected to the circuit structure (10A) via the through-hole (30c) without being in contact with the metal body (30b; 30m, 30n, 30o; 30t, 30u, 30v), wherein: - the second end of the at least one connection terminal (30d; 30g; 30h, 30i, 30j, 30k; 30p, 30q, 30r, 30s; 30w, 30x, 30y) is connected to the metal structure (10B) and - the socket (30a) is present opposite only one side of the control board (10). [2] A semiconductor device according to claim 1, further comprising: - a mounting portion (30e) attached to a side surface of the socket (30a), a threaded hole (30f) being formed in the mounting portion (30e); and - a screw (50) which fastens the control board (10) to the mounting part (30e), the screw (50) extending through a through hole (10c) of the control board (10) and being threadably engaged with the threaded hole (30f). [3] The semiconductor device according to claim 1 or 2, wherein the at least one connection terminal (30d; 30g; 30h, 30i, 30j, 30k; 30p, 30q, 30r, 30s; 30w, 30x, 30y) extends through a through hole (10b) of the control board (10) and is soldered to the metal pattern (10B) formed on an upper surface of the control board (10). [4] A semiconductor device according to any one of claims 1 to 3, wherein the at least one connection terminal (30d; 30g; 30h, 30i, 30j, 30k; 30p, 30q, 30r, 30s; 30w, 30x, 30y) comprises a plurality of connection terminals (30d; 30g; 30h, 30i, 30j, 30k; 30p, 30q, 30r, 30s; 30w, 30x, 30y). [5] A semiconductor device according to any one of claims 1 to 4, wherein - the semiconductor chip (20) is provided below the control board (10) and - the metal structure (10B) is formed on the side of a lower surface of the control board (10). [6] A semiconductor device according to any one of claims 1 to 5, wherein: - the semiconductor chip (20) is provided next to the control terminal (TG, TE, TK), and - the semiconductor device further comprises an unprotected control terminal extending through the socket (30a) without passing through the through-hole (30c). [7] A semiconductor device according to claim 1, further comprising: - a mounting portion (30e) attached to a side surface of the socket (30a), a threaded hole (30f) being formed in the mounting portion (30e); and - a screw (50) securing the control board (10) to the mounting portion (30e), the screw (50) extending through a through hole of the control board (10) and being threadably engaged with the threaded hole (30f), wherein: - the at least one connection terminal (30d; 30g; 30h, 30i, 30j, 30k; 30p, 30q, 30r, 30s; 30w, 30x, 30y) is provided on the mounting portion (30e) so as to be in contact with the screw (50), and - the screw (50) is brought into contact with the metal structure (10B). [8] A semiconductor device according to claim 7, wherein the at least one connection terminal (30d; 30g; 30h, 30i, 30j, 30k; 30p, 30q, 30r, 30s; 30w, 30x, 30y) is provided in the threaded hole (30f). [9] A semiconductor device according to any one of claims 1 to 8, wherein: - the control terminal (TG, TE, TS, TK, TA) has a first control terminal and a second control terminal, wherein a current proportional to a current of the first control terminal flows, and - the metal body (30; 30m, 30n, 30o; 30t, 30u, 30v) covers the first control terminal and the second control terminal. [10] A semiconductor device according to any one of claims 1 to 9, wherein: - a positioning convex portion (31) is provided on an upper surface of the socket (30a), and - a concave portion (10E) is provided on a lower surface of the control board (10), wherein the positioning convex portion (31) fits into the concave portion (10E). [11] A semiconductor device according to any one of claims 1 to 10, wherein: - a plurality of convex portions (60, 62) are provided on an upper surface of the socket (30a), - a positioning hole (10i) is formed in the control board (10), and - the plurality of convex portions (60, 62) are inserted into the positioning hole (10i). [12] A semiconductor device according to any one of claims 1 to 10, wherein: - the metal body (30b; 30m, 30n, 30o; 30t, 30u, 30v) has a plurality of convex portions (37, 39) of the metal body which extend upwards so that they are higher than the socket (30a), - a positioning hole (10i) is provided in the control board (10), and - the plurality of convex portions (37, 39) of the metal body (30b; 30m, 30n, 30o; 30t, 30u, 30v) are inserted into the positioning hole (10i).

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