Connections with a section without sheathing material and related structures, facilities and procedures

Abstract

IC, Integrated Circuit, structure, comprehensive: a dielectric intermediate layer, ILD, material (110) with a top surface, a compound (120) comprising electrically conductive material and including a first section (126) near a first end (122) of the compound and a second section (128) near a second end (124) of the compound, wherein the first end (122) extends to or into the ILD material (110) and the second end (124) is opposite to the first end (122), and a sheath material (130) around the first section (126) of the connection and between the first end (122) of the connection and the ILD material (110), wherein an end of the sheath material (130) opposite the first end (122) of the connection defines a boundary between the first section (126) of the connection and the second section (128) of the connection, the boundary being above the top surface of the ILD material (110).

Description

Technical field

[0001] The disclosure relates to compounds with at least one section that is not encased by a cladding material. In particular, the disclosure relates to semiconductor devices with partially unclad compounds. background

[0002] BEOL (Back End of Line, process sequence in semiconductor manufacturing from the first metallization layer) processing for semiconductor devices (e.g., IC (Integrated Circuit) devices and structures) involves connecting electrical components (e.g., transistors, memory cells, resistors, capacitors, other components, or combinations thereof). Typically, BEOL processing involves the formation of electrically conductive structures (e.g., contacts, connections, etc.) and electrically insulating structures (e.g., interlayer dielectric (ILD) structures) to connect the electrical components.

[0003] WO 2017 / 052540A1 describes a helmet layer applied to a variety of conductive structures on a first dielectric layer on a substrate. A second dielectric layer is applied to a first section of the helmet layer. An etch stop layer is applied to a second section of the helmet layer.

[0004] US 2016 / 0307842A1 describes a semiconductor device comprising a plurality of spaced-apart wiring structures and an insulating interlayer structure. Each wiring structure includes a metal pattern and a barrier pattern that covers a sidewall, a bottom surface, and a periphery of the top surface of the metal pattern, while leaving a central area of ​​the top surface uncovered. The insulating interlayer structure contains the wiring structures and has an air gap between them.

[0005] US 2009 / 0072400A1 describes a method for forming a contact in two or more sections and a contact so formed. A method comprises providing a device with a silicide region and forming a contact to the silicide region by: first, forming a lower contact section to the silicide region by means of a first dielectric layer, and second, forming an upper contact section to the lower contact section by means of a second dielectric layer over the first dielectric layer. A contact may include a first contact section that contacts a silicide region, wherein the first contact section has a width of less than 100 nm, and a second contact section that is coupled to the first contact section from above, wherein the second contact section has a width greater than the width of the first contact section.The invention is defined in the main claim and in dependent claims 11 and 22. Brief description of the drawings Fig. Figure 1 is a simplified cross-sectional view of a BEOL structure according to some embodiments. Fig. Figure 2 is a simplified cross-sectional view of the BEOL structure. Fig. 1, which was encapsulated. Fig. Figure 3 is a simplified cross-sectional view of the BEOL structure. Fig. 1, which was refilled with an ILD replacement material. Fig. Figure 4 is a simplified flowchart illustrating a method for producing a BEOL structure according to some embodiments. Fig. Figures 5A to 5I are simplified cross-sectional views of a BEOL structure to illustrate the process. Fig. 4 to illustrate. Fig. Figure 6 illustrates an intermediate element that includes one or more embodiments of the disclosure. Fig. Figure 7 illustrates a data processing device according to one embodiment of the disclosure. Detailed description of preferred embodiments

[0006] This document describes connections that have at least one section not encased by a sheathing material, as well as related structures, devices, and procedures. The following description uses terminology that a person skilled in the art would use to convey the core of their work to another person skilled in the art. However, it is evident to a person skilled in the art that the present disclosure can also be implemented using only some of the described aspects. For illustrative purposes, specific figures, materials, and configurations are presented to ensure a complete understanding of the illustrative implementations. However, a person skilled in the art understands that the present disclosure can also be implemented without these specific details.In other cases, well-known features are omitted or simplified to make the illustrative implementations clearer.

[0007] To facilitate understanding of this disclosure, various work steps are described as several individual steps; however, the order of the description should not be interpreted as implying that these work steps necessarily follow a sequence. In particular, these work steps do not have to be carried out in the presented order.

[0008] The terms "above," "below," "between," and "on" as used here refer to the relative position of a material layer or component with respect to other layers or components. For example, a layer positioned above or below another layer may be in direct contact with that layer or may have one or more intervening layers. Furthermore, a layer positioned between two layers may be in direct contact with both layers or may have one or more intervening layers. A first layer "on" a second layer, however, is in direct contact with that second layer. Likewise, unless explicitly stated otherwise, a structural element positioned between two structural elements may be in direct contact with the adjacent structural elements or may have one or more intervening layers.

[0009] Implementations of the disclosure can be formed or executed on a substrate such as a semiconductor substrate. In one implementation, the semiconductor substrate may be a crystalline substrate formed using solid silicon or a silicon-on-insulator substructure. In other implementations, the semiconductor substrate may be formed using alternative materials, which may optionally be combined with silicon and which may include, but are not limited to, germanium, indium antimonide, lead telluride, indium arsenide, indium phosphide, gallium arsenide, indium gallium arsenide, gallium antimonide, or other combinations of materials from Group III to V or Group IV.Although some examples of materials from which the substrate can be formed are described herein, any material that can serve as a foundation on which a semiconductor device can be built falls within the basic idea and scope of the present disclosure.

[0010] The need for ever smaller semiconductor devices has led to increasingly smaller scales of structures on or within these devices. However, these scales can be limited by size constraints for forming interconnects.

[0011] Connections traversing ILD structures often include cladding to improve adhesion. These connections also frequently incorporate barrier materials to prevent electrically conductive material from diffusing into the ILD. Current scaling of cladding and barrier materials has limitations (e.g., approximately one nanometer (1 nm) minimum spacing for both) to prevent defects. Consequently, the scaling of connections, and therefore of BEOL structures and semiconductor devices overall, can be affected by these limitations in cladding and / or barrier material scaling.Furthermore, the resistance in connections can be relatively high if a significant portion of their total cross-sectional area consists of sheathing and / or barrier materials, as these materials generally have a higher resistivity than the electrically conductive materials used for the connections. Additionally, the capacitance between connections can be relatively high if the connections are placed relatively close together to compensate for the limited scaling of the connections. Relatively high resistance and capacitance values ​​affect the operating speed (which is affected proportionally to the product of the resistance and capacitance of the connections).

[0012] The scalability of interconnects can be improved by removing sections of cladding and / or barrier materials from the interconnects during BEOL processing. In some embodiments, an IC structure (e.g., a BEOL structure) includes an ILD material and an interconnect. The interconnect includes a first end extending to or into the ILD material and a second end opposite the first end. A section of the interconnect located near the second end does not include any cladding.

[0013] Fig. Figure 1 is a simplified cross-sectional view of a BEOL structure 100 according to some embodiments. The BEOL structure 100 can form part of a semiconductor structure that includes electrical components to which the BEOL structure 100 provides connections. The BEOL structure 100 includes an ILD material 110, one or more connections 120, a cladding material 130, and a remnant of a hermetic cladding material 140. The ILD material 110 includes an electrically insulating material (e.g., SiO₂, SiO₂, low-k dielectrics, etc.).

[0014] The compounds 120 each contain electrically conductive material. By way of example, and without limitation, the electrically conductive material of the compounds 120 can be a metal (e.g., Cu, Co, Ru, Al, etc.). The in Fig. The illustrated compounds 120 each include a first end 122 extending into the ILD material 110 and a second end 124 opposite the first end 122. Even though the first ends 122 of the compounds 120 of Fig. While the first ends 122 of the compounds 120 extend into the ILD material 110, it is conceivable within the scope of the disclosure that the first ends 122 of the compounds 120 could instead extend to the ILD material 110 without extending into it. The compounds 120 also each include a first section 126 located near the first end 122 and a second section 128 located near the second end 124 (a conceptual dashed line is shown separating the first section 126 from the second section 128).

[0015] The sheath material 130 extends over the first ends 122 and the first sections 126 of the connections 120. Ends of the sheath material 130 opposite the first ends 122 of the connections 120 can define boundaries between the first section 126 and the second section 128 of the connections 120. The sheath material 130 can include a material that is etchable. By way of example and without limitation, the sheath material 130 can include TiN, Ti, Ru, TaN, MoN, other sheath materials, or combinations thereof. The sheath material 130 is configured to improve the adhesion of the connections 120 to the ILD material 110. In some embodiments, the sheath material 130 also includes a barrier material (not shown) on an inner section of the sheath 130 (i.e., the part of the sheath 130 that contacts the connections 120). In such embodiments, the sheath material 130 represents the Fig. 1 both the sheathing and the barrier. The barrier material is configured to prevent the electrically conductive material of the connections 120 from penetrating the sheathing material 130.

[0016] The hermetic sheath material 140 is in contact with the ILD material 110 and borders at least part of the first section 126 of each compound 120. Consequently, the sheath material 130 separates the compounds 120 from the ILD material 110 and the remaining hermetic sheath material 140. The residue of the hermetic sheath material 140 may be conformal, relatively dense, and have a relatively high dielectric constant (e.g., a dielectric constant higher than that of the ILD material 110). By way of example, and not as a limitation, the residue of the hermetic sheath material 140 may include HfO₂ (with a dielectric constant of about 20), Al₂O₃ (with a dielectric constant of about 9), carbon-doped SiN (with a dielectric constant of about 7), SiOCN (with a dielectric constant of about 5), other materials, or combinations thereof. As below with reference to Fig. 4 and Fig. 5 is executed, the hermetic sheath material 140 of the Fig. 1. This is a remnant of sacrificial material used during machining of the BEOL structure 100 to seal the connections 120, the sheath material 130, and the ILD 110 against a carbon hard mask (CHM) material 550 (e.g., to provide at least a partial barrier against diffusion of the CHM into the connections 120, the sheath material 130, and the ILD 110). In some embodiments, the thickness of the hermetic sheath material 140 is approximately two nanometers (2 nm).

[0017] As in Fig. As illustrated in Figure 1, the second section 128 of the connections 120, extending from the second end 124 to the first section 126, does not include the sheath material 130 located thereon. Consequently, the scaling of connections can be improved, since the connections 120 can be placed closer together than connections which include sheath materials covering their second sections, without increasing the capacity between the connections 120 (i.e., because the distance between the connections 120 without the sheath material 130 on the second sections is less than the distance between the sheath materials of connections with sheaths on their second sections).

[0018] In addition to or instead of placing the connections 120 relatively close together, the resistance of the connections 120 can be reduced compared to the resistance of connections having cladding materials on their second sections (i.e., because the electrically conductive material of the connections 120 can occupy volume that would otherwise be occupied by cladding material and / or barrier material, both of which are less electrically conductive than typical materials of the connections 120). In such embodiments, higher conductivity of the connections 120 can result in improved thermal conductivity, which can improve the dissipation of self-heating emanating from semiconductor devices coupled to the BEOL structure 100.Furthermore, a larger amount of electrically conductive material in the connections 120 can result in greater structural strength than in structures that include sheath materials and / or barrier materials that occupy some of the volume that could be occupied by the connecting material.

[0019] In some embodiments, the distance from the second end 124 of the connections 120 to the section of the connections 120 extending from the ILD material 110 (e.g., the boundary between the first section 126 and the second section 128) may be approximately eighty percent (80%) of the total length of the connections 120 from the first end 122 to the second end 124.

[0020] In some embodiments, air gaps 272 may remain between the second sections 128 of the connections 120. In some embodiments, the air gaps 272 may be encapsulated, as described below with reference to Fig. 2 is executed.

[0021] In some embodiments, the air gaps 272 between the second sections 128 of the connections 120 can be filled with a replacement ILD 380, as shown below with reference to Fig. 3 is executed.

[0022] Fig. Figure 2 is a simplified cross-sectional view of an exemplary BEOL structure 100A of the BEOL structure 100 from Fig. 1, which was encapsulated. The BEOL structure 100A includes air gaps 272 adjacent to the second sections 128 of the connections 120 and an encapsulation structure 270 to encapsulate the air gaps 272. In some embodiments, the encapsulation structure 270 may comprise SiC, SiCN, other materials, or combinations thereof.

[0023] In embodiments where it is desired to form vias from BEOL structures formed on BEOL structure 100A, via material can unintentionally shift into the air gap 272, which can cause component failure (e.g., short circuits). Consequently, when vias are formed from above, at least part of BEOL structure 100 is refilled with a replacement ILD material 380.

[0024] Fig. Figure 3 is a simplified cross-sectional view of an example BEOL structure 100B of the BEOL structure 100 from Fig. 1, which was refilled with a replacement ILD material 380. As a result, the BEOL structure contains 100 of Fig. 1 near the second sections 128 of the connections 120, the substitute ILD material 380 is used. In some embodiments, the substitute dielectric constant of the substitute ILD material 380 is lower than the dielectric constant of the ILD material 110. By way of example and without limitation, the substitute dielectric constant can be between about 1.9 and 2.1, and the dielectric constant of the ILD material 110 between about 2.9 and 3.5. In some embodiments, the substitute ILD material 380 can incorporate a porous dielectric to achieve a relatively low dielectric constant. A relatively low dielectric constant of the substitute ILD material 380 can allow for reduced capacitance between the connections 120, resulting in faster performance.

[0025] In some embodiments, a BEOL structure can contain 100 sections in which encapsulation is used and sections in which the replacement ILD material 380 is used.

[0026] Fig. Figure 4 is a simplified flowchart illustrating a process 400 for producing a BEOL structure (e.g., BEOL structures 100, 100A, or 100B). Fig. 1 to 3) illustrated according to some embodiments.

[0027] Fig. Figures 5A to 5I are simplified cross-sectional views of a BEOL structure 500, to illustrate the procedure 400 of the Fig. 4 to illustrate.

[0028] With joint reference to the Fig. 4 and 5A to 5I include the process 400 forming 410 sheathed connections 520 and an ILD material 510. Fig. Figure 5A shows the BEOL structure 500, which includes the connections 520 extending through the ILD material 510 and containing sheaths 530 located thereon. The connections 520, the sheath material 530, and the ILD material 510 can be connected to the connections 120, the sheath material 130, and the ILD material 110 as described above with reference to Fig. 1. executed similarly.

[0029] The process 400 also includes removing 420 of the ILD material 510 between the connections 520 to expose a section of the sheath material 530 covering a second section 528 of the connections 520. Fig. Figure 5B shows an example of the resulting BEOL structure 500. A portion of a first section 526 of each of the connections 520 may extend into the ILD material 510. In some embodiments, the removal 420 of the ILD material 510 may involve exposing a section of the sheath material covering approximately eighty percent (80%) of the length of the connections 520. In some embodiments, more or less than 80% of the connections 520 may be exposed. In some embodiments, the removal 420 of the ILD material 510 may involve removing the ILD material 510 by means of a dry etching process to form air gaps 572 between the connections 520. Such an etching process may be referred to as an "air gap etching process".

[0030] Method 400 further includes applying 430 a conformal hermetic encapsulation 540 to a remaining ILD material 510 and the exposed portion of the encapsulation material 530 and the connections 520. The conformal hermetic encapsulation 540 can be applied to the above with reference to Fig. 1. resemble the aforementioned hermetic mantle material 140. Fig. Figure 5C illustrates an example of the resulting BEOL structure 500. In some embodiments, the application 430 of a conformal hermetic encapsulation 540 involves depositing approximately two nanometers (2 nm) of the conformal hermetic encapsulation 540. In some embodiments, the application 430 of a conformal hermetic encapsulation 540 involves the application of HfO2 (with a dielectric constant of approximately 20), Al2O3 (with a dielectric constant of approximately 9), carbon-doped SiN (with a dielectric constant of approximately 7), SiOCN (with a dielectric constant of approximately 5), other materials, or combinations thereof.

[0031] The process 400 also includes the application 440 of a carbon hard mask (CHM) material 550 (e.g. an amorphous carbon material or an amorphous carbon compound) between the connections 520. Fig. Figure 5D illustrates the CHM material 550 on the BEOL structure 500. In some embodiments, the application 440 of the CHM material 550 involves spin-applying the CHM material 550. The conformal hermetic sheath 430 applied as described above can serve at this point as a sacrificial material, which is used during the processing of the BEOL structure 500 to seal the connections 520, the sheath material 530, and the ILD 510 against the CHM material 550 (e.g., to provide at least a partial barrier against diffusion of the CHM into the connections 520, the sheath material 530, and the ILD 510).

[0032] The process 400 further includes removing 450 a section of the CHM material 550 to a distance d from the remaining ILD material 510. Fig. Figure 5E illustrates the CHM material 550 removed up to the distance d from the remaining ILD material 510. In some embodiments, the removal 450 of the section of the CHM material 550 involves etching back the CHM material 550 to the distance d from the remaining ILD material 510.

[0033] The process 400 also includes the removal 460 of the conformal hermetic cladding 540 from the exposed section of the cladding material 530 to a remaining section of the CHM material 550. An example of the resulting BEOL structure 500 is shown in Fig. Figure 5F illustrates this. In some embodiments, the removal 460 of the conformal hermetic encapsulation 540 involves etching the hermetic encapsulation 540 by means of chemical wet etching.

[0034] The process 400 also includes removing 470 of the exposed section of the sheath material 530 down to the remaining section of the CHM material 550 in order to expose the second section 528 of the connections 520. An example of the resulting BEOL structure 500 is shown in Fig. 5G illustrated. Although not shown, in some embodiments a trace, a section, or all of the CHM material 550 may remain. In some embodiments, the removal 470 of the exposed section of the sheath material 530 involves etching the exposed section using a Piranha etching process. It is evident that the BEOL structure 500 of the Fig. 5G of the BEOL structure 100 of the Fig. 1 resembles.

[0035] In embodiments in which the BEOL structure 500 is encapsulated, the method 400 includes encapsulating 480 the air gaps 572 between the exposed second sections 528 of the connections 520 with an encapsulation material 570. An example of the resulting BEOL structure 500 is shown in Fig. 5H illustrates this. The encapsulation material 570 can be described with reference to Fig. The encapsulation material 270 described in section 2 is similar. In some embodiments, the encapsulation 480 of the air gaps 572 comprises arranging the encapsulation material 570 over the connections 520.

[0036] In embodiments where a substitute ILD material 580 is used, the method 400 involves filling 490 the air gaps 572 between the exposed second sections 528 of the connections 520 with the substitute ILD material 580. An example of the resulting BEOL structure 500 is shown in Fig. 5I illustrates. The replacement ILD material 580 can be compared to the one described in section 5. Fig. The replacement ILD material 580 described in Figure 3 resembles the replacement ILD material 380 described in Figure 3. In some embodiments, the replacement ILD material 580 can be arranged (e.g., spin-deposited, deposited, etc.) such that it covers the second ends 524 of the connections 520. In some such embodiments, a section of the replacement ILD material 580 can be abraded (e.g., polished) until a top surface of the replacement ILD material 580 is approximately flush with the second ends 524 of the connections 520, as described in Figure 3. Fig. 5I illustrates.

[0037] Fig. Figure 6 illustrates an intermediate element 1000 that incorporates one or more embodiments of the disclosure. The intermediate element 1000 is an intermediate substrate used to bridge between a first substrate 1002 and a second substrate 1004. The first substrate 1002 may, for example, be an IC die. The second substrate 1004 may, for example, be a memory module, a computer motherboard, or another IC die. The purpose of an intermediate element 1000 is, in principle, to extend a connection over a wider distance or to redirect a connection to another connection. For example, an intermediate element 1000 may couple an IC die to a ball grid array (BGA) 1006, which can then be coupled to the second substrate 1004.In some embodiments, the first and second substrates 1002 / 1004 are attached to opposite sides of the intermediate element 1000. In other embodiments, the first and second substrates 1002 / 1004 are attached to the same side of the intermediate element 1000. And in further embodiments, three or more substrates are connected by the intermediate element 1000.

[0038] The intermediate element 1000 can be formed from an epoxy resin, a glass fiber-reinforced epoxy resin, a ceramic material, or a polymer material such as polyimide. In further implementations, the intermediate element can be formed from alternative rigid or flexible materials, which may include the same materials as described above for use in a semiconductor substrate, for example, silicon, germanium, and other materials of groups III to V and group IV.

[0039] The intermediate element can include metal connections 1008 and vias 1010, including, but not limited to, silicon vias (TSVs) 1012. The intermediate element 1000 can also include embedded components 1014, including both passive and active components. Such components include, but are not limited to, capacitors, decoupling capacitors, resistors, inductors, fuses, diodes, transformers, sensors, and electrostatic discharge devices (ESDs). Furthermore, more complex devices such as radio frequency (RF) devices, power amplifiers, energy-saving devices, antennas, arrays, sensors, and MEMS devices can be formed on the intermediate element 1000.

[0040] According to embodiments of the disclosure, devices or processes disclosed herein can be used in the manufacture of the intermediate element 1000.

[0041] Fig.Figure 7 illustrates a data processing device 1200 according to an embodiment of the disclosure. The data processing device 1200 may include several components. In one embodiment, these components are mounted on one or more mainboards. In an alternative embodiment, some or all of these components are fabricated on a single system-on-a-chip (SoC) die, for example, an SoC used for mobile devices. The components in the data processing device 1200 include, but are not limited to, an IC die 1202 and at least one communication logic unit 1208. In some implementations, the communication logic unit 1208 is fabricated within the IC die 1202, while in other implementations, the communication logic unit 1208 is fabricated in a separate IC chip, which may be attached to a substrate or mainboard.which is used together with or electronically coupled to the IC die 1202. The IC die 1202 can include a CPU 1204 as well as the main memory 1206 on the die, which is often used as cache memory and can be provided by technologies such as embedded DRAM (eDRAM), SRAM, or spin-transfer torque memory (STT-MRAM).

[0042] The data processing unit 1200 can include additional components, which may be either physically and electrically coupled to the mainboard or manufactured within a SoC die. These additional components may include, but are not limited to, volatile memory 1210 (e.g., DRAM), non-volatile memory 1212 (e.g., ROM or flash memory), a graphics processing unit 1214 (GPU), a digital signal processor 1216, and a cryptoprocessor 1242 (e.g., a cryptographic processor).a specialized processor that executes cryptographic algorithms in hardware), a chipset 1220, at least one antenna 1222 (in some implementations two or more antennas may be used), a display or touch-sensitive display 1224, a control device 1226 for a touch-sensitive display, a battery 1229 or other power source, a power amplifier (not shown), a voltage regulator (not shown), a GPS (Global Positioning System) device 1228, a compass (not shown), a motion coprocessor or motion sensors 1232 (which may include an accelerometer, a gyroscope and a compass), a microphone (not shown), a loudspeaker 1234, a camera 1236, user input devices 1238 (such as a keyboard, mouse, stylus and touchpad) and a mass storage device 1240 (such as a hard disk drive, compact disk (CD), digital versatile disk (DVD) etc.).The Data Processing Unit 1200 may include additional transmission, telecommunications, or radio functionality not described herein. In some implementations, the Data Processing Unit 1200 includes a radio device used to communicate over a distance through the air or space by modulating and transmitting electromagnetic waves. In some implementations, the Data Processing Unit 1200 includes a transmitter and a receiver (or a transceiver) used to communicate over a distance through the air or space by modulating and transmitting electromagnetic waves.

[0043] The Communication Logic Unit 1208 enables wireless communication for the transmission of data to and from the Data Processing Unit 1200. The term "wireless" and derivatives thereof can be used to describe circuits, devices, systems, procedures, methods, communication channels, etc., that are capable of transmitting data through a non-solid medium by means of modulated electromagnetic radiation. The term does not imply that the corresponding devices do not contain any wiring, although this may be the case in some embodiments. The Communication Logic Unit 1208 can implement any of a number of wireless standards or protocols, including, but not limited to, Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE 802.11, and IEEE 802.11.20, Long Term Evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, Infrared (IR), Near Field Communication (NFC), Bluetooth and variations thereof, as well as any other wireless protocols referred to as 3G, 4G, 5G and beyond. The 1200 data processing unit can include a variety of 1208 communication logic units. For example, a first 1208 communication logic unit can be used for shorter-range wireless messaging such as Wi-Fi, NFC, and Bluetooth, and a second 1208 communication logic unit can be used for longer-range wireless messaging such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, and others.

[0044] The processor 1204 of the data processing device 1200 comprises one or more components, for example transistors or metal compounds, formed according to embodiments of the disclosure. The term "processor" can refer to any device or any section of a device that processes electronic data from registers and / or memory in order to convert this electronic data into other electronic data that can be stored in registers and / or memory.

[0045] The communication logic unit 1208 may also include one or more facilities such as BEOL structures 100, 500, which are formed according to implementations of the disclosure.

[0046] In further embodiments, a further component included in the data processing device 1200 can contain one or more devices such as BEOL structures 100, 500, which are formed according to implementations of the disclosure.

[0047] In various embodiments, the data processing device 1200 can be a laptop computer, a netbook computer, a notebook computer, an ultrabook computer, a smartphone, a dumbphone, a tablet, a tablet / laptop hybrid, a personal digital assistant (PDA), an ultra-mobile PC, a mobile phone, a desktop computer, a server, a printer, a scanner, a monitor, a set-top box, an entertainment control unit, a digital camera, a portable music player, or a digital video recorder. In other implementations, the data processing device 1200 can be any other electronic device that processes data. Examples

[0048] The following is a non-exhaustive list of exemplary embodiments. In order to avoid complicating the disclosure, not all of the examples listed below are separately and explicitly considered to be combinable with all other examples listed below and further embodiments disclosed above. Insofar as the lack of combinability of these examples listed below and the embodiments disclosed above is not obvious to a person skilled in the art, these examples and embodiments are considered combinable within the scope of the disclosure.

[0049] Example 1: IC structure comprising: a dielectric intermediate layer (ILD) material, a junction comprising electrically conductive material and including a first section near a first end of the junction and a second section near a second end of the junction, wherein the first end extends to or into the ILD material and the second end is opposite to the first end, and a cladding material around the first section of the junction and between the first end of the junction and the ILD material, wherein an end of the cladding material opposite to the first end of the junction defines a boundary between the first section of the junction and the second section of the junction.

[0050] Example 2: IC structure according to Example 1, further comprising a remnant of a hermetic sheath material in contact with the ILD material and adjacent to at least a part of the first section of the connection, wherein the sheath material is located between the connection and the ILD material and between the connection and the remnant of the hermetic sheath material.

[0051] Example 3: IC structure according to Example 2, wherein the thickness of the remaining hermetic sheath material is approximately 2 nanometers (2 nm).

[0052] Example 4: IC structure according to one of Examples 2 and 3, wherein the remnant of the hermetic sheath material is HfO 2, Al2O3, carbon-doped SiN or combinations thereof.

[0053] Example 5: IC structure according to one of Examples 1 to 4, wherein a distance from the second end of the connection to the first section of the connection is approximately eighty percent (80%) of a total length of the connection from the first end to the second end.

[0054] Example 6: IC structure according to one of examples 1 to 5, further comprising an air gap adjacent to the second section of the connection.

[0055] Example 7: IC structure according to Example 6, further comprising an encapsulation material adjacent to the second end of the connection and configured to encapsulate the air gap.

[0056] Example 8: IC structure according to one of examples 1 to 5, further comprising a replacement ILD material adjacent to the second section of the connection.

[0057] Example 9: IC structure according to Example 8, where a substitute dielectric constant of the substitute ILD material is lower than a dielectric constant of the ILD material.

[0058] Example 10: IC structure according to Example 9, where the equivalent dielectric constant is between about 1.9 and 2.1 and the dielectric constant is between about 2.9 and 3.5.

[0059] Example 11: Method for fabricating an IC structure, wherein the method comprises: removing a dielectric intermediate layer (ILD) material between connections that are at least partially covered by a cladding material to expose a portion of the cladding material covering a second portion of the connections; applying a conformal hermetic encapsulation to a remaining ILD material and the exposed portion of the cladding material; applying a carbon hard mask (CHM) between the connections; removing a portion of the CHM to a distance from the remaining ILD; removing the conformal hermetic encapsulation from the exposed portion of the cladding material to a remaining portion of the CHM; and removing the exposed portion of the cladding material to the remaining portion of the CHM to expose the second portion of the connections.

[0060] Example 12: Method according to Example 11, wherein the removal of ILD material between connections comprises removing the ILD material by means of a dry etching process to form air gaps between the connections.

[0061] Example 13: Method according to one of Examples 11 and 12, wherein the removal of an ILD material between connections comprises exposing a section of the sheath material covering approximately eighty percent (80%) of a length of the connections.

[0062] Example 14: Method according to any of Examples 11 to 13, wherein the application of a conformal hermetic encapsulation comprises depositing approximately 2 nanometers (2 nm) of the conformal hermetic encapsulation.

[0063] Example 15: Method according to any of Examples 11 to 14, wherein the application of a conformal hermetic encapsulation comprises the application of at least one material selected from the group consisting of HfO2, Al2O3 and carbon-doped SiN.

[0064] Example 16: Method according to one of Examples 11 to 15, wherein the application of a CHM comprises spin-applying the CHM.

[0065] Example 17: Method according to one of Examples 11 to 16, wherein the removal of a section of the CHM includes etching back the CHM to the distance from the remaining ILD.

[0066] Example 18: Method according to any of Examples 11 to 17, wherein the removal of the conformal hermetic encapsulation comprises etching the hermetic encapsulation by means of chemical wet etching.

[0067] Example 19: Method according to any of Examples 11 to 18, wherein the removal of the exposed portion of the sheath material comprises etching the exposed portion using a Piranha etching process.

[0068] Example 20: Method according to one of Examples 11 to 19, further comprising encapsulating air gaps between the exposed second section of the connections with an encapsulation material.

[0069] Example 21: Method according to one of Examples 11 to 19, further comprising filling gaps between the exposed second section of the connections with a replacement ILD.

[0070] Example 22: Data processing device comprising: at least one IC structure comprising: a plurality of connections, each having at its first end a first section covered with a cladding material and at its second end a second section without the cladding material, a hermetic enclosure between the first section of the connections, and an integrated dielectric layer (ILD) near at least a portion of the cladding material at the first end of each of the plurality of connections.

[0071] Example 23: Data processing device according to Example 22, further comprising: a processor mounted on a substrate, a memory unit capable of storing data, a graphics processing unit, an antenna in the data processing device, a display on the data processing device, a battery in the data processing device, a power amplifier in the processor and a voltage regulator in the processor, wherein the processor, the memory unit, the graphics processing unit, the antenna, the display, the battery, the power amplifier and / or the voltage regulator comprise at least one IC structure.

[0072] Example 24: Method for fabricating an IC structure, wherein the method comprises: forming a dielectric intermediate layer (ILD) material, forming a junction comprising electrically conductive material and including a first end extending to or into the ILD material and a second end opposite the first end, forming a cladding material separating the junction from the ILD material, and removing the cladding material from a second section of the junction extending from a second end to a first section of the junction near the first end.

[0073] Example 25: Method according to Example 24, further comprising forming a hermetic sheath material in contact with the ILD material and adjacent to at least a part of the first section of the connection, wherein the sheath material separates the connection from the ILD material and the hermetic sheath material.

[0074] Example 26: Method according to Example 25, wherein the thickness of the hermetic sheath material is about 2 nanometers (2 nm).

[0075] Example 27: Method according to one of Examples 25 and 26, wherein the hermetic sheath material is HfO 2, Al2O3, carbon-doped SiN or combinations thereof.

[0076] Example 28: Method according to one of Examples 24 to 27, wherein a distance from the second end of the connection to the first section of the connection is about eighty percent (80%) of a total length of the connection from the first end to the second end.

[0077] Example 29: Method according to one of Examples 24 to 28, further comprising leaving an air gap adjacent to the second section of the connection.

[0078] Example 30: Method according to Example 29, further comprising forming an encapsulation material adjacent to the second end of the connection, wherein the encapsulation material is configured to encapsulate the air gap.

[0079] Example 31: Method according to one of Examples 24 to 28, further comprising forming a replacement ILD material adjacent to the second section of the compound.

[0080] Example 32: Method according to Example 31, wherein a substitute dielectric constant of the substitute ILD material is less than a dielectric constant of the ILD material.

[0081] Example 33: Method according to Example 32, wherein the equivalent dielectric constant is between about 1.9 and 2.1 and the dielectric constant is between about 2.9 and 3.5.

[0082] Example 34: IC structure comprising: a dielectric interlayer (ILD) material, connections at least partially covered at a first end of the connections with a cladding material, wherein a section of the cladding material covering a second section of the connections has been removed, the first end being opposite a second end of the connections and the second section being closer to the second end than to the first end, a conformal hermetic cladding near the cladding material and a remnant of a carbon hard mask (CHM) near the conformal hermetic cladding.

[0083] Example 35: IC structure according to Example 34, further including air gaps between the connections.

[0084] Example 36: IC structure according to one of Examples 34 and 35, wherein approximately eighty percent (80%) of the total length of the connections has no sheath material on them.

[0085] Example 37: IC structure according to one of Examples 34 to 36, wherein the conformal hermetic encapsulation is about two nanometers (2 nm) thick.

[0086] Example 38: IC structure according to one of Examples 34 to 37, wherein the conformal hermetic encapsulation comprises at least one material selected from the group consisting of HfO2, Al2O3 and carbon-doped SiN.

[0087] Example 39: IC structure according to one of Examples 34 to 38, wherein the CHM includes a CHM to be spun.

[0088] Example 40: IC structure according to one of Examples 34 to 40, wherein the remainder of the CHM extends from the conformal hermetic encapsulation to approximately the second section of the connections.

[0089] Example 41: IC structure according to one of Examples 34 to 40, further comprising an encapsulation material configured to encapsulate air gaps between the exposed second section of the connections.

[0090] Example 42: IC structure according to one of Examples 34 and 36 to 40, further comprising a replacement ILD material configured to fill gaps between the exposed second section of the connections.

[0091] Example 43: Method for operating a data processing device, wherein the method comprises: conducting electrical charge through at least one IC structure comprising: a plurality of connections, each having at its first end a first section covered with a cladding material and at its second end a second section without the cladding material, a hermetic encapsulation between the first section of the connections, and an integrated dielectric layer (ILD) near at least a portion of the cladding material at the first end of each of the plurality of connections.

[0092] Example 44: Method according to Example 43, wherein the conduction of electrical charge through at least one IC structure comprises: a processor mounted on a substrate, a storage unit capable of storing data, a graphics processing unit, an antenna in the data processing device, a display on the data processing device, a battery in the data processing device, a power amplifier in the processor, or a voltage regulator in the processor.

[0093] Example 45: Computer-readable medium on which computer-readable instructions are stored, wherein the computer-readable instructions are configured to instruct one or more processors to perform at least part of the procedure according to any one of Examples 11 to 21, 24 to 33, 43 and 44.

[0094] Example 46: Means for carrying out at least part of the procedure according to any one of Examples 11 to 21, 24 to 33, 43 and 44. Notes

[0095] The foregoing description of the implementations of the disclosure presented, including those described in the summary, is not intended to be exhaustive or to limit the disclosure to precisely the disclosed forms. While specific implementations and examples of the disclosure are described here for illustrative purposes, various equivalent modifications are possible within the scope of the disclosure, as a person skilled in the art understands.

Claims

[1] IC, Integrated Circuit, structure, encompassing: a dielectric intermediate layer, ILD, material (110) with a top surface, a compound (120) comprising electrically conductive material and including a first section (126) near a first end (122) of the compound and a second section (128) near a second end (124) of the compound, wherein the first end (122) extends to or into the ILD material (110) and the second end (124) is opposite to the first end (122), and a sheath material (130) around the first section (126) of the connection and between the first end (122) of the connection and the ILD material (110), wherein an end of the sheath material (130) opposite the first end (122) of the connection defines a boundary between the first section (126) of the connection and the second section (128) of the connection, the boundary being above the top surface of the ILD material (110). [2] IC structure according to claim 1, further comprising a remnant of a hermetic sheath material (140) in contact with the ILD material (110) and adjacent to at least a part of the first section (126) of the compound (120), wherein the sheath material (130) is located between the compound (120) and the ILD material (110) and between the compound (120) and the remnant of the hermetic sheath material (140). [3] IC structure according to claim 2, wherein the thickness of the remaining hermetic sheath material (140) is about 2 nm. [4] IC structure according to claim 2, wherein the residue of the hermetic sheath material (140) comprises HfO2, Al2O3, carbon-doped SiN or combinations thereof. [5] IC structure according to claim 1, wherein the distance from the second end (124) of the connection (120) to the first section (126) of the connection is about 80% of the total length of the connection from the first end (122) to the second end (124). [6] IC structure according to one of claims 1 to 5, further comprising an air gap (272) adjacent to the second section (128) of the connection (120). [7] IC structure according to claim 6, further comprising an encapsulation material (270) adjacent to the second end (124) of the connection (120) and configured to encapsulate the air gap (272). [8] IC structure according to one of claims 1 to 5, further comprising a replacement ILD material (380) adjacent to the second section (128) of the connection (120). [9] IC structure according to claim 8, wherein a substitute dielectric constant of the substitute ILD material (380) is less than a dielectric constant of the ILD material (110). [10] IC structure according to claim 9, wherein the equivalent dielectric constant is between about 1.9 and 2.1 and the dielectric constant is between about 2.9 and 3.

5. [11] Method for manufacturing an IC structure, the method comprising: Removal of a dielectric interlayer, ILD, material (510) between connections (520) that are at least partially covered with a sheath material (530) in order to expose a section of the sheath material (530) that covers a second section (528) of the connections (520), Applying a conformal hermetic encapsulation (540) to a remaining ILD material (510) and the exposed portion of the encapsulation material (530), Application of a carbon hard mask between the connections (520), Removal of a section of the CHM (550) to a distance from the remaining ILD (510), Removal of the conformal hermetic cladding (540) from the exposed section of the cladding material (530) to a remaining section of the CHM (550) and Removing the exposed section of the sheath material (530) down to the remaining section of the CHM (550) to expose the second section (528) of the connections (520). [12] Method according to claim 11, wherein the removal of an ILD material (510) between connections (520) of the ILD material (510) by means of a dry etching process to form air gaps (572) between the connections (520). [13] Method according to claim 11, wherein the removal of an ILD material (510) between connections (520) comprises exposing a section of the sheath material (530) covering approximately 80% of a length of the connections (520). [14] Method according to claim 11, wherein the application of a conformal hermetic encapsulation (540) comprises the deposition of about 2 nm of the conformal hermetic encapsulation (540). [15] Method according to claim 11, wherein the application of a conformal hermetic encapsulation (540) comprises the application of at least one material selected from the group consisting of HfO2, Al2O3 and carbon-doped SiN. [16] Method according to claim 11, wherein the application of a CHM (550) comprises spin-applying the CHM (550). [17] Method according to claim 11, wherein the removal of a section of the CHM (550) comprises etching back the CHM (550) to the distance from the remaining ILD (510). [18] Method according to claim 11, wherein the removal of the conformal hermetic encapsulation (540) comprises etching the hermetic encapsulation (540) by means of chemical wet etching. [19] Method according to claim 11, wherein the removal of the exposed section of the sheath material (530) comprises etching the exposed section using a Piranha etching process. [20] Method according to claim 11, further comprising encapsulating air gaps (572) between the exposed second section (528) of the connections (520) with an encapsulation material (570). [21] Method according to claim 11, further comprising filling gaps between the exposed second section (528) of the connections (520) with a replacement ILD (580). [22] Data processing facility, comprising: at least one IC structure that includes the following: a plurality of compounds (120), each having at its first end (122) a first section (126) covered with a sheath material (130) and at its second end (124) a second section (128) without the sheath material (130), wherein the first end (122) extends to or into a dielectric interlayer, ILD, material (110) and the second end (124) is opposite the first end (122), wherein an end of the sheath material (130) opposite the first end (122) of the respective compound (120) defines a boundary between the first section (126) of the compound and the second section (128) of the compound, the boundary being above the top surface of the ILD material (110), and a hermetic casing (140) between the first section (126) of the connections (120) and a dielectric intermediate layer, ILD (110), near at least a part of the sheath material (130) at the first end (122) of each of the plurality of connections (120). [23] Data processing device according to claim 22, further comprising: a processor mounted on a substrate, a storage unit capable of storing data, a graphics processing unit, an antenna in the data processing facility, a notification at the data processing facility, a battery in the data processing unit, a power amplifier in the processor and a voltage regulator in the processor including the processor, the memory unit, the graphics processing unit, the antenna, the display, the battery, the power amplifier and / or the voltage regulator, which comprise at least one IC structure.

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