DETECTOR AND CONVERTER

Abstract

Detector with one or more detector diodes (311-314) for detecting a change in the environment of a detection object, a Y-capacitance with multiple capacitors (323a, 323b) arranged separately between one end of the detector diodes (311-314) and ground (GND) and between the other end of the detector diodes (311-314) and GND, and a rectifier circuit (324a, 324b; 327a, 327b) connected at least between one of the two ends of the detector diodes (311-314) and ground (GND) and in series with the Y-capacitance for transferring an asymmetric current, which is associated with noise induced in the detector diodes (311-314), to GND and for switching off the normal operating loop current flowing between the several capacitors (323a, 323b) and the detector diodes (311-314).

Description

TECHNICAL AREA

[0001] The invention relates to a detector and a converter operating with it. STATE OF THE ART

[0002] JP 2010 - 249 687 A (PTL 1) represents the state of the art in this technical field. This publication discloses: “To create a device for detecting a physical quantity, capable of preventing voltage fluctuations of a detector element due to common-mode interference and of accurately detecting the physical quantity, a temperature measuring device 1 comprises temperature-sensitive diodes 10 to 12, a capacitor 13, resistors 14, 15, a reference current source 16, and a comparator 18. The temperature-sensitive diodes 10 to 12 are connected at one end via resistor 14 to a circuit GND, which is isolated from a vehicle chassis, and at their other end via resistor 15 to the comparator 18. The capacitor 13 is connected in parallel to the temperature-sensitive diodes 10 to 12. One end of the reference current source 16 is connected to the circuit GND, and the other end to the comparator 18.”The capacitor 13 and the resistors 14 and 15 prevent common-mode interference. This avoids the voltage fluctuations in the temperature-sensitive diodes 10 to 12 caused by common-mode interference and allows for accurate temperature measurement. Document JP 2002-319837A discloses a circuit for interference suppression in a connecting line using two Y-capacitors. Patent literature

[0003] PTL1: JP 2010 - 249 687 A SUMMARY OF THE INVENTION Technical Problem

[0004] PTL 1 discloses a device for detecting a physical quantity that is capable of avoiding voltage fluctuations of the detector element caused by common-mode interference and accurately detecting the physical quantity. The problem with the device according to PTL 1 is that during a current-injection test (BCl), in which a high-voltage cable of a power converter is superimposed with electromagnetic noise in a loop constructed from temperature-sensitive diodes 10 to 12, a capacitor, and a leakage inductor, resonance occurs at a specific frequency, the forward voltage of the temperature-sensitive diodes decreases due to resonance noise, independent of the temperature, and the reading of a temperature sensor increases significantly, causing the power converter to stop operating.

[0005] The present invention provides a detector and a current converter operating with it, in which common-mode disturbances superimposed on noise and caused by electromagnetic interference can be eliminated and current loops can be switched off during normal operation. Problem solving

[0006] To solve the above problems, the invention provides a detector comprising: one or more sensing diodes for detecting a change in the environment of a detection object; a Y-capacitor with multiple capacitors arranged separately between one end of the sensing diodes and ground and between the other end of the sensing diodes and ground; and a rectifier circuit connected in series with the Y-capacitor at least between one end of the sensing diodes and ground or between the other end of the sensing diodes and ground, and configured to transfer an asymmetric current associated with noise induced in the sensing diodes to ground and to switch off the asymmetric loop current flowing between the multiple capacitors and the sensing diodes. Beneficial effect

[0007] The invention makes it possible to remove common-mode interference superimposed on noise and caused by electromagnetic interference, and to eliminate current loops during normal operation.

[0008] Further problems, configurations and effects will arise from the following description of exemplary implementations. BRIEF DESCRIPTION OF THE DRAWINGS Fig. Figure 1 shows a block diagram of the configuration of a detector according to a first embodiment; Fig. Figure 2 shows a block diagram of the configuration of an inverter according to the first embodiment; Fig. Figure 3 shows a block diagram as a summary of a BCI test; Fig. Figures 4 to 8 each show a block diagram of the configuration of a detector according to a second, third, fourth, fifth and sixth embodiment. DESCRIPTION OF EXAMPLES OF EXECUTION

[0009] Exemplary embodiments are described below with reference to the drawings. In these drawings, the same reference numerals denote identical or corresponding parts. The invention is not limited to the illustrated embodiments. First embodiment

[0010] Based on Fig. Figures 1 to 3 describe an example in which a measuring sensor according to the invention is used as a temperature sensor for measuring the temperature of a semiconductor module. The semiconductor module comprises a semiconductor element, such as an insulated-layer bipolar transistor (IGBT) contained in an inverter stage, a metal oxide semiconductor field-effect transistor (MOSFET), or a SiC, wherein the inverter stage is a drive inverter for operating the motor of an electric or hybrid vehicle or the like.

[0011] First, using Fig. 1. The structure of a measuring sensor mounted on a semiconductor module is described. Fig. Figure 1 shows a block diagram of the configuration of a detector according to the first embodiment.

[0012] According to Fig. The assembly comprises a converter stage on which the detector according to the first embodiment is arranged, a semiconductor module 30, a measuring circuit 32 for detecting the temperature of the semiconductor module, and a control unit 15. A semiconductor module 30a belonging to the semiconductor module 30 is configured as a metal module in which semiconductor elements 301a, 302a, such as an IBT, a MOSFET, and a SiC, are housed. The semiconductor elements 301a, 302a are connected in series with each other between the positive terminal 303a and the negative terminal 304a of a high-voltage source. The junction between the semiconductor elements 301a and 302a forms a switching output 305a of the semiconductor module 30a.

[0013] A semiconductor module 30b, also belonging to semiconductor module 30 and similar to semiconductor module 30a, comprises semiconductor elements 301b and 302b connected in series (not shown), a positive terminal 303b and a negative terminal 304b of the high-voltage source, and a switching output 305b. A semiconductor module 30c, again belonging to semiconductor module 30 and similar to semiconductor module 30a, comprises semiconductor elements 301c and 302c connected in series (not shown), a positive terminal 303c and a negative terminal 304c of the high-voltage source, and a switching output 305c.

[0014] The semiconductor module 30a includes a temperature sensor 31a as a measuring sensor for detecting changes in the environment of the semiconductor elements 301a, 302a, for example, the ambient temperature of the semiconductor elements 301a, 302a or the temperature of the semiconductor module 30. The temperature sensor 31a generally consists of a circuit of one or more diodes connected in series; in the present embodiment, a configuration of four diodes (measuring diodes) 311 to 314 connected in series is shown. These diodes 311 to 314 are components whose forward voltage changes depending on the ambient temperature. The information acquired by the temperature sensor 31a is output as the total forward voltage of the four diodes 311 to 314.For the sake of simplicity, in the present embodiment the anode terminal of diode 311 is referred to as the anode terminal of temperature sensor 31a and the cathode terminal of diode 314 as the cathode terminal of temperature sensor 31a.

[0015] The anode and cathode terminals of the temperature sensor 31a are separately connected to the semiconductor module temperature measuring circuit 32. This circuit 32 comprises a current source 322, which supplies current to the anode terminal of the temperature sensor 31a, a voltage measuring unit (voltage detector) 321, which detects a forward voltage between the anode and cathode terminals of the temperature sensor 31a, at least two capacitors 323a, 323b, and at least two rectifier diodes 324a, 324b. The capacitors 323a, 323b and the rectifier diodes 324a, 324b, together with the four diodes (the detection diodes) 311 to 314, form a detector. The rectifier diodes 324a, 324b form a rectifier circuit.

[0016] The anode terminal of the temperature sensor 31a is connected to a terminal on one side (one terminal) of the capacitor 323a, the other terminal of which is connected to the anode terminal of the rectifier diode 324a. A cathode terminal of the rectifier diode 324a is connected to GND (circuit ground) of the semiconductor module temperature measuring circuit 32. GND (circuit ground) of this circuit is, for example, set to zero as the reference voltage.

[0017] The cathode terminal of the temperature sensor 31a is connected to a terminal on one side (one terminal) of the capacitor 323b, the other terminal of which is connected to the anode terminal of the rectifier diode 324b. The cathode terminal of the rectifier diode 324b is connected to GND (circuit ground) of the semiconductor module temperature measuring circuit 32.

[0018] The voltage detected by the voltage measuring unit 321 (between the anode and cathode terminals of the temperature sensor 31a) is applied to the control unit 35. This unit contains a correlation table in which a correlation between the voltage value detected by the voltage measuring unit 321 and the temperature of the semiconductor module 30a is predefined, and allows temperature information about the semiconductor module 30a to be obtained from the correlation table based on the voltage value detected by the voltage measuring unit 321.

[0019] Next, using Fig. 2 an example of the inverter is described in which the semiconductor modules 30a to 30c, the temperature sensor 31a and the semiconductor module temperature measuring circuit 32 are provided. Fig. Figure 2 shows a block diagram of the inverter configuration according to the first embodiment. As described above, an inverter is assumed as an example, which generates an alternating voltage (AC) from a direct current (DC) voltage. A converter can also be used instead of an inverter.

[0020] The inverter 3 comprises the semiconductor modules 30a to 30c with semiconductor elements, such as an IGFET, MOSFET, or SiC, the semiconductor module temperature measuring circuit 32, the control unit 35, and a smoothing capacitor 34. The smoothing capacitor 34 is connected to the power source 1 via a cable 2, the semiconductor modules 30a to 30c are connected to the load 5 via a cable 4, and the semiconductor elements 301a to 301c in the semiconductor modules 30a to 30c are switched on and off to generate a desired voltage or current. The power source 1 operates with a battery or an AC power supply converted to a DC voltage supply via a rectifier. An inverter for powering a hybrid vehicle, for example, operates with a high-voltage battery of several hundred volts.In the case of a medical device powered by the AC mains, such as an X-ray diagnostic device, a rectifier or converter circuit is used to convert the AC power supply into a DC power supply.

[0021] During switching in accordance with a control signal from the control unit 35, a high-frequency switching current and a high-frequency switching voltage are generated by the semiconductor elements 301a to 301c in the semiconductor modules 30a to 30c. The smoothing capacitor 34 generally serves to smooth the switching current and the switching voltage. The positive side of the high-frequency supply output by the smoothing capacitor 34 is connected to the positive terminals 303a to 303c of the respective semiconductor modules 30a to 30c, while the negative side of the high-frequency supply is connected to the negative terminals 304a to 304c of the semiconductor modules 30a to 30c. The switching outputs 305a to 305c of the semiconductor modules 30a to 30c are connected separately to the load 5 via cable 4. In this case, load 5 of the inverter is, for example, the motor of an electric or hybrid vehicle. Three-phase current is generated, which is supplied to the load to drive the motor.The switching operation of the semiconductor elements in the semiconductor modules 30a to 30c is controlled by the control unit 35.

[0022] At least one of the semiconductor modules 30a to 30c contains the temperature sensor 31a, which detects the temperature in the semiconductor module 30a. This sensor detects the temperature in the semiconductor module during switching operation. The output signal of the temperature sensor 31a is measured by the semiconductor module temperature measurement circuit (the measuring circuit) 32 and supplied to the control unit 35. If, for example, the temperature in the semiconductor module 30a exceeds a predetermined temperature (if the total forward voltage detected by the temperature sensor 31a (the total forward voltage of diodes 311 to 314) exceeds a predetermined value), the control unit 35 stops the switching operation of the semiconductor elements 301a to 302c in the relevant semiconductor modules to prevent damage to the semiconductor module 30a.

[0023] The temperature sensor 31a uses the semiconductor module 30a or the multiple semiconductor elements 301a to 302a as the detection object and serves as a component of the detector, which outputs a voltage corresponding to the ambient temperature of the detection object. The multiple semiconductor elements 301a to 302c serve as a converter that transforms direct current into alternating current through switching operation. The control unit 35 controls the switching operation of the semiconductor elements 301a to 302c, compares the output voltage of the temperature sensor 31a with a setpoint value, and stops the switching operation of the multiple semiconductor elements 301a to 302c if the output voltage of the temperature sensor 31a exceeds the setpoint value.

[0024] Next, we will use the following as an example: Fig. 3 describes an overview of the current feed-in (BCl) test, which is one of the inverter's immunity tests. Fig. Figure 3 shows a block diagram as a summary of the BCI test. The object under test (test object) 6, whose interference immunity is to be evaluated, is connected to a load 8 via a cable 7. The cable 7 passes through a current injection probe 11, injecting a current into the cable. A signal generator 9 produces a sine wave or an amplitude-modulated signal with a predefined amplitude and frequency, which is fed to an amplifier 10. The amplifier 10 amplifies the input signal and feeds the amplified signal to the current injection probe 11, which injects a current into the cable by magnetic field coupling.

[0025] In the BCI test, as described above, a sine wave or an amplitude-modulated signal with a predefined amplitude and frequency is injected via the current injection probe 11 into the cable 7 connecting the test object 6 to the load 8. This checks whether the test object 6 operates normally without interfering with the desired operation. Desired operation here means, for example, that no malfunction occurs during the switching operation of the inverter 3 and that fluctuations in the monitored value of the temperature sensor, current sensor, or similar in the semiconductor module do not exceed a predefined value.

[0026] The following briefly describes the operating procedure during the BCI test, in which the inverter (power converter device) 3 serves as the test object in the present embodiment. It is assumed that a line connected to the load 5 in cable 4 at the output of the semiconductor module 30a constitutes the test object of the BCI test. The test object 6 is shown in the block diagram illustrating the general arrangement of the BCI test. Fig. 3 of the inverters (in the inverter unit) 3 of the Fig. 2, and the last 8 in Fig. 3 is the last 5 in Fig. 2.

[0027] Here, a current injected into cable 4 via the current injection probe 11 is transferred to the semiconductor module 30a and the load 5. This current transferred to the semiconductor module 30a is transmitted by the switching output 305a to the semiconductor elements 301a and 302a in the semiconductor module 30a and is also induced as common-mode interference in the temperature sensor 31a mounted on the same module. Common-mode interference can generally be eliminated by grounding via a Y-capacitor. In the semiconductor module temperature measurement circuit 32 of the present embodiment, the capacitors 323a and 323b serve as the Y-capacitor, thereby eliminating common-mode interference. When common-mode disturbances are induced in the temperature sensor 31a, an asymmetric current passing through the temperature sensor 31a is transferred via the capacitors 323a, 323b to GND (circuit earth) of the semiconductor module temperature measuring circuit 32.

[0028] If, on the other hand, the rectifier diodes 324a and 324b are short-circuited and not present, a loop current flows through a loop formed by the temperature sensor 31a and the capacitors 323a and 323b during normal operation, generating resonance at a specific frequency. This normal-operation loop current can, however, be suppressed by inserting the rectifier diodes 324a and 324b into the loop formed by the temperature sensor 31a and the capacitors 323a and 323c. As a result, resonance at a specific frequency can be prevented.

[0029] As described above, according to the first embodiment in the semiconductor module temperature measuring circuit 32, common-mode interference superimposed on the temperature sensor 31a can be removed by the Y-capacitance formed by the capacitors 323a, 323b, and resonance at a specific frequency can be prevented by switching off the (normal operating) loop current by means of the rectifier diodes 324a, 324b.

[0030] According to the first embodiment, it is thus possible to prevent voltage fluctuations at the output of the temperature sensor 31a caused by electromagnetic interference in the BCI test, which simulates electromagnetic noise superposition on a high-voltage cable. As a result, common-mode interference caused by the current injected during the BCI test, resonances caused by the (normal operating) loop current, and fluctuations in the forward voltage of the temperature sensor 31a caused by resonant noise can be prevented. Even if noise caused by electromagnetic interference is induced in the temperature sensor 31a in an environment outside of a BCI test, voltage fluctuations at the output of the temperature sensor 31a can be avoided.As a result, common-mode interference caused by a current induced in the temperature sensor can be prevented, and the (normal operating) loop current can be switched off. Because of this effect, fluctuations in the measured value of the temperature sensor 31a and malfunctions of the control unit 35 and the inverter 3 can be avoided.

[0031] According to the first embodiment, inexpensive chip components can be used for the capacitors 323a, 323b and the rectifier diodes 324a, 324b. The inverter (the converter device) 3, which is able to prevent fluctuations in the measured value of the temperature sensor 31a during the BCI test, can be created with just a simple additional circuit.

[0032] The first embodiment shows a case in which the temperature sensor 31a is mounted in the semiconductor module 30a. Obviously, the same effect can also be achieved if the temperature sensor 31a is mounted in another semiconductor module 30b or 30c. The configuration of the inverter (the converter device) 3 has been described above in which the temperature sensor 31a is mounted only in the semiconductor module 30a. However, it can also be provided in several other ways, for example, only in the semiconductor module 30b or the semiconductor module 30c, or in all semiconductor modules 30a to 30c, always achieving the same effect. Second embodiment

[0033] Based on Fig. Section 4 describes an example of a setup in which the noise suppression is increased by adding an RC filter as a filter stage in the semiconductor module temperature measurement circuit 32.

[0034] Fig. Figure 4 shows a block diagram of the configuration of a detector according to a second embodiment. Reference is made to the description of configurations that bear the same reference symbols as in Figure 4. Fig. 1, and of parts that are part of the detector's construction according to Fig. The number 4 that have the same function was omitted.

[0035] The semiconductor module temperature measurement circuit 32 according to Fig. 4 differs from the one after Fig. 1 in the following points: (i) a resistor 325a is inserted between the anode terminal of the temperature sensor 31a and the voltage measuring unit 321, a resistor 325b is inserted between the cathode terminal of the temperature sensor 31a and the voltage measuring unit 321, and a capacitor 327 is inserted between the input terminals of the voltage measuring unit 321, and an RC filter is additionally provided as a filter stage; (ii) the negative terminal 304a of the high-voltage source serves as a reference for GND (circuit ground) of the semiconductor module temperature measuring circuit 32. In this case, GND (circuit ground) is set to a negative voltage value as the reference voltage.

[0036] Next, the operating procedure during the BCI test is briefly described, in which the inverter (the converter device) 3 is used as the test object in the present embodiment. The connections for the BCI test are the same as in the first embodiment. A current injected into cable 4 via the current injection probe 11 forms a common-mode disturbance injected into the temperature sensor 31a. This disturbance is suppressed by the capacitors 323a, 323b and the rectifier diodes 324a, 324b in the same way as in the first embodiment. Fig. Although the common-mode interference is removed, some of it is transmitted to the voltage measuring unit 321 as normal operating noise. The RC filter can be formed from resistors 325a, 325b and capacitor 327, thus suppressing the normal operating noise transmitted to the voltage measuring unit 321. Due to the presence of resistors 325a and 325b, no resonance caused by capacitor 327 and temperature sensor 31 occurs.

[0037] In the second embodiment, the same effect is achieved as in the semiconductor module temperature measurement circuit 32 of the first embodiment, and normal operating noise transmitted to the voltage measurement unit 321 can be suppressed, so that an inverter (converter device) 3 with a more accurate temperature measurement value is obtained. Third example

[0038] Based on Fig. Section 5 describes an example in which the circuit configuration is changed to eliminate common-mode interference in the semiconductor module temperature measurement circuit 32.

[0039] Fig. Figure 5 shows a block diagram of the configuration of a detector according to a third embodiment. Reference is made to the description of configurations that bear the same reference symbols as in Figure 5. Fig. 4 and of parts that are part of the detector's construction according to Fig. The number 5 that have the same function was omitted.

[0040] The semiconductor module temperature measurement circuit 32 according to Fig. 4 differs from the one after Fig. 5 in the following point: The installation direction of the rectifier diodes 324a, 324b is opposite Fig. 4. Conversely. In Fig. 5 The rectifier diode 327a is connected at its anode terminal to GND (circuit ground) and at its cathode terminal to the capacitor 323a, and the rectifier diode 327b is connected at its anode terminal to GND (circuit ground) and at its cathode terminal to the capacitor 323b.

[0041] In the third embodiment, the function of switching off a current loop by the rectifier diodes 327a, 327b is evidently unchanged, and the same effect is achieved as in the second embodiment. Fourth embodiment

[0042] Based on Fig. Section 6 describes an example in which the circuit configuration is changed to eliminate common-mode interference in the semiconductor module temperature measurement circuit 32.

[0043] Fig. Figure 6 shows a block diagram of the configuration of a detector according to a fourth embodiment. Reference is made to the description of configurations that bear the same reference symbols as in Figure 6. Fig. 4, and of parts that are part of the detector's construction according to Fig. The number 6 that have the same function was omitted.

[0044] The semiconductor module temperature measurement circuit 32 according to Fig. 4 differs from the one after Fig. 6 in the following point: Opposite Fig. In step 4, the connection order of rectifier diode 324a and capacitor 323a is reversed, as is the connection order of rectifier diode 324b and capacitor 323b. This means that the anode terminal of rectifier diode 324a is connected to the anode terminal of temperature sensor 31a, and the cathode terminal of rectifier diode 324a is connected to capacitor 323a, the other terminal of which is connected to GND (circuit ground). Similarly, the anode terminal of rectifier diode 324b is connected to the cathode terminal of temperature sensor 31a, and the cathode terminal of rectifier diode 324b is connected to capacitor 323b, the other terminal of which is connected to GND (circuit ground).

[0045] In this configuration, which is similar to that of the second embodiment, common-mode interference superimposed on the temperature sensor 31a is eliminated by a Y-capacitance formed by the capacitors 323a, 323b, and resonance at a specific frequency can be prevented by switching off the current loop by means of the rectifier diodes 324a, 324b.

[0046] According to the fourth embodiment, common-mode interference caused by a current induced during the BCI test and resonance caused by the loop current are prevented. This effect prevents fluctuations in the measured value of the temperature sensor 31a. Fifth embodiment

[0047] Based on Fig. Section 7 describes an example in which the circuit configuration is changed to eliminate common-mode interference in the semiconductor module temperature measurement circuit 32.

[0048] Fig. Figure 7 shows a block diagram of the configuration of a detector according to a fifth embodiment. Reference is made to the description of configurations that bear the same reference symbols as in Figure 7. Fig. 6, and of parts that are part of the detector's construction according to Fig. The number 7 that have the same function was omitted.

[0049] The semiconductor module temperature measurement circuit 32 according to Fig. 6 differs from the one after Fig. 7 in the following point: Opposite Fig. 6 indicates the reversed installation direction of rectifier diodes 324a and 324b. Fig. 7 the cathode terminal of rectifier diode 327a is connected to the anode terminal of temperature sensor 31a and the anode terminal of rectifier diode 327a is connected to capacitor 323a, while the cathode terminal of rectifier diode 327b is connected to the cathode terminal of temperature sensor 31a and the anode terminal of rectifier diode 327b is connected to capacitor 323b.

[0050] In the fifth embodiment, the function of switching off a current loop by the rectifier diodes 327a, 327b is evidently unchanged, and the same effect is achieved as in the fourth embodiment. Sixth embodiment

[0051] Based on Fig. Section 8 describes a configuration example in which the location of a common-mode interference elimination circuit is changed.

[0052] Fig. Figure 8 shows a block diagram of the configuration of a detector according to a sixth embodiment. Reference is made to the description of configurations that bear the same reference numerals as in Figure 8. Fig. 4, and of parts that are part of the detector's construction according to Fig. The number 8 that have the same function was omitted.

[0053] In the present embodiment, the capacitors 232a, 323b and the rectifier diodes 324a, 324b, which are components of the semiconductor module temperature measuring circuit 32, are mounted in the semiconductor module 30a, the connection configuration of these components being the same as in Fig. 4.

[0054] In the sixth embodiment, the function of switching off a current loop by the rectifier diodes 324a, 324b is evidently unchanged, and the same effect is achieved as in the second embodiment. According to the sixth embodiment, measures are possible to eliminate common-mode interference and to switch off the (normal) loop current in the semiconductor module 30a.

[0055] The invention is not limited to the embodiments described above but also extends to various variants. For example, even if only one of the rectifier diodes 324a, 324b (or 327a, 327b) is inserted into a loop (two current loops with opposite current flow) between the temperature sensor 31a and the capacitors 323a, 323b (or the rectifier diodes 327a, 327b), it is possible to switch off only one of the two current loops. The embodiments described above have been explained in detail for ease of understanding; the invention is not limited to circuits that have all the configurations described above. Part of the configuration of one embodiment can be replaced by that of another embodiment, and the configuration of one embodiment can be extended by that of a further embodiment.The configuration of each embodiment can be added to, omitted, or replaced with a different configuration.

[0056] The configurations, functions, processing units, and the like described above can be implemented partially or completely by hardware, such as integrated circuit technology, or by software through the interpretation and execution of programs that realize the respective function via a processor. Information, such as programs, tables, files, and the like, for implementing the individual functions can be stored in a recording device, such as a memory device, a hard drive, or a solid-state drive (SSD), or on a recording medium, such as an IC card, SD card, or DVD.

[0057] Control and information lines are considered necessary for explanation; however, they are not necessarily shown in the product. In practice, it can be assumed that almost all configurations are interconnected. REFERENCE MARK LIST 1 Power source 2, 4, 7 cables 3 inverters (converter device) 5, 8 Last 6 Test object 9 Signal transmitters 10 amplifiers 11 Current feed-in probe 30a, 30b, 30c Semiconductor module 301a to 301c Semiconductor element 302a to 302c Semiconductor element 303a to 303c Positive terminal of the high-voltage source 304a to 304c Negative terminal of the high-voltage source 305a to 305c switching output 31a Temperature sensor 311 to 314 Diode 32 Semiconductor module temperature measurement circuit 321 Voltage measuring circuit 322 Power source 323a, 323b, 327 Capacitor 324a, 324b, 327a, 327b Rectifier diode 34 Smoothing capacitor 35 Control unit

Claims

[1] Detector with one or more detector diodes (311-314) for detecting a change in the environment of a detection object, a Y-capacitance with multiple capacitors (323a, 323b) arranged separately between one end of the detector diodes (311-314) and ground (GND) and between the other end of the detector diodes (311-314) and GND, and a rectifier circuit (324a, 324b; 327a, 327b) connected at least between one of the two ends of the detector diodes (311-314) and ground (GND) and in series with the Y-capacitance for transferring an asymmetric current, which is associated with noise induced in the detector diodes (311-314), to GND and for switching off the normal operating loop current flowing between the several capacitors (323a, 323b) and the detector diodes (311-314). [2] Detector according to claim 1, wherein the rectifier circuit comprises several rectifier diodes (324a, 324b) whose cathode terminals are each grounded, an anode terminal of the several rectifier diodes (324a) is connected via one of the several capacitors (323a) to one end of the detector diodes (311-314) and another anode terminal of the several rectifier diodes (324b) is connected via another of the capacitors (323b) to the other end of the detector diodes (311-314). [3] Detector according to claim 1, wherein the rectifier circuit comprises several rectifier diodes (327a, 327b) whose anode terminals are each grounded, a cathode terminal of the several rectifier diodes (327a) is connected via one of the several capacitors (323a) to one end of the detector diodes (311-314) and a further cathode terminal of the several rectifier diodes (327b) is connected via another of the capacitors (323b) to the other end of the rectifier diodes (311-314). [4] Detector according to claim 1, wherein the rectifier circuit comprises several rectifier diodes (324a, 324b), an anode terminal of the several rectifier diodes (324a) is connected to one end of the detector diodes (311-314), a cathode terminal of the several rectifier diodes (324a, 324b) is grounded via one of the several capacitors (323a), another anode terminal of the several rectifier diodes (324b) is connected to the other end of the detector diodes (311-314) and another cathode terminal of the several rectifier diodes (324b) is grounded via another of the capacitors (323b). [5] Detector according to claim 1, wherein the rectifier circuit comprises several rectifier diodes, a cathode terminal of the several rectifier diodes (324a, 324b) is connected to one end of the detector diodes (311-314), an anode terminal of the several rectifier diodes is grounded via one of the several capacitors (323a, 323b), another cathode terminal of the several rectifier diodes (324a, 324b) is connected to the other end of the detector diodes (311-314) and another anode terminal of the several rectifier diodes (324a, 324b) is grounded via another of the capacitors (323a, 323b). [6] Detector according to one of claims 1 to 5, wherein a filter circuit for eliminating normal operating noise induced in the detector diodes (311-314) is connected to the two ends of the detector diodes. [7] Detector according to any one of claims 1 to 6, wherein GND is at a zero or a negative voltage value. [8] Detector according to any one of claims 1 to 7, wherein the detector diodes (311-314), the Y-capacitance (323a, 323b) and the rectifier diodes (324a, 324b) are arranged in the same module (30a) as the detection object of the detector diodes (311-314). [9] Inverter arrangement with: a converter (3) for converting direct current to alternating current or alternating current to direct current by switching the operating mode of several semiconductor elements (301a-301c, 302a-302c), the detector (31a, 323a, 323b, 324a, 324b) to output a voltage corresponding to the ambient temperature of a detection object formed by the several semiconductor elements (301a-301c, 302a-302c), and a control unit (35) for controlling the switching operation of the multiple semiconductor elements (301a-301c, 302a-302c), comparing the output voltage of the detector with a setpoint value and stopping the switching operation of the multiple semiconductor elements (301a-301c, 302a-302c) when the output voltage of the detector exceeds the setpoint value, the detector includes: one or more detector diodes (311-314) for detecting a change in the environment of a detection object, a Y-capacitance with multiple capacitors (323a, 323b) arranged separately between one end of the detector diodes (311-314) and ground (GND) and between the other end of the detector diodes (311-314) and ground (GND), and a rectifier circuit, at least between one of the two ends of the detector diodes (311-314) and ground (GND) and in series with the Y-capacitance, for transferring an asymmetric current, which is associated with noise induced in the detector diodes (311-314), to ground (GND) and for switching off the normal operating loop current flowing between the several capacitors (323a, 323b) and the detector diodes (311-314). [10] Converter arrangement according to claim 9, wherein the rectifier circuit comprises several rectifier diodes (324a, 324b) in which each of the cathode terminals is grounded, an anode terminal of the several rectifier diodes (324a, 324b) is connected via one of the several capacitors (323a, 323b) to one end of the detector diodes (311-314) and another anode terminal of the several rectifier diodes (324a, 324b) is connected via another of the capacitors (323a, 323b) to the other end of the rectifier diodes (324a, 324b). [11] Converter arrangement according to claim 9, wherein the rectifier circuit comprises several rectifier diodes (324a, 324b) in which each of the anode terminals is grounded, a cathode terminal of the several rectifier diodes (311-314) is connected via one of the several capacitors to one end of the detector diodes (311-314) and a further cathode terminal of the several rectifier diodes (324a, 324b) is connected via another of the capacitors (323a, 323b) to the other end of the rectifier diodes (324a, 324b). [12] Converter arrangement according to claim 9, wherein the rectifier circuit comprises several rectifier diodes (324a, 324b), an anode terminal of the several rectifier diodes (324a, 324b) is connected to one end of the detector diodes (311-314), a cathode terminal of the several rectifier diodes is grounded via one of the several capacitors (323a, 323b), another anode terminal of the several rectifier diodes is connected to the other end of the detector diodes (311-314) and another cathode terminal of the several rectifier diodes is grounded via another of the capacitors (323a, 323b). [13] Converter arrangement according to claim 9, wherein the rectifier circuit comprises several rectifier diodes, a cathode terminal of the several rectifier diodes is connected to one end of the detector diodes (311-314), an anode terminal of the several rectifier diodes is grounded via one of the several capacitors (323a, 323b), another cathode terminal of the several rectifier diodes is connected to the other end of the detector diodes (311-314) and another anode terminal of the several rectifier diodes is grounded via another of the capacitors (323a, 323b). [14] Converter arrangement according to one of claims 9 to 13, wherein a filter circuit for eliminating normal operating noise induced in the detector diodes (311-314) is connected to the two ends of the detector diodes (311-314). [15] Inverter arrangement according to any one of claims 9 to 14, wherein GND is at a zero or a negative voltage value.

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