Semiconductor component, device with a semiconductor component and method for manufacturing semiconductor components

Abstract

Semiconductor device (1) with a radiation emission surface (10) and a semiconductor body (2) with a first semiconductor layer (21) and a second semiconductor layer (22), as well as an active area (20) arranged between the first semiconductor layer (21) and the second semiconductor layer (22) for generating radiation, wherein - the semiconductor device has a shaped body (4) which is integrally formed with the semiconductor body; - Contacts (31, 32) for external electrical contacting of the semiconductor component are accessible on an outer surface (43) of the molded body; - a deflection structure (29) is arranged between the active area and the radiation exit surface; - a planarization layer (5) is arranged on the deflection structure; - the semiconductor device has a polarizer (6) which is arranged on a side of the planarization layer facing away from the semiconductor body; and - the semiconductor body (2) has a mirror structure (7) on a side facing away from the radiation emission surface (10) with at least one dielectric layer (322) and a metallic contact layer (323), wherein the dielectric layer (322) is arranged locally between the semiconductor body (2) and the metallic contact layer (323); and - a current expansion layer (321) is adjacent to the second semiconductor layer (22).

Description

[0001] The present application relates to a semiconductor device and a device with such a semiconductor device, as well as a method for manufacturing semiconductor devices.

[0002] Display devices are often used to show moving images, where the image-generating unit is backlit by LEDs. This places high demands on the LEDs in terms of their efficiency within their small dimensions. For so-called light field displays, which enable a three-dimensional-looking display, the light requirement increases even further.

[0003] One task is to simplify efficient backlighting with light sources in a compact design.

[0004] This problem is solved, inter alia, by a semiconductor device, a device comprising such a semiconductor device, and a method for manufacturing semiconductor devices according to the independent claims. Further embodiments and advantages are the subject of the dependent claims.

[0005] Semiconductor devices and their manufacturing processes are known from the publications US 2017 / 0250318A1, US 2010 / 0051983A1, US 2008 / 0035944A1, US 2007 / 0285000A1, EP 2423717A2 and US 2010 / 0301026A1.

[0006] A semiconductor device with a radiation emission surface and a semiconductor body is specified, wherein the semiconductor body has an active region intended for generating radiation.

[0007] For example, the active region is located between a first semiconductor layer of a first conduction type and a second semiconductor layer of a second conduction type different from the first, such that the active region is situated in a pn junction. The active region is intended, for example, for generating radiation in the ultraviolet, visible, or infrared spectral range. For example, the semiconductor body, and in particular the active region, contains a III-V compound semiconductor material. For example, the semiconductor body consists of an epitaxially deposited sequence of semiconductor layers. For example, the semiconductor device is free of a growth substrate for the semiconductor layer sequence.

[0008] According to at least one embodiment of the semiconductor device, the semiconductor device has a shaped body. The shaped body is, in particular, integrally formed with the semiconductor body. This means, in particular, that the shaped body follows an outer contour of the semiconductor body or a layer arranged on the semiconductor body on its side facing the semiconductor body. The shaped body can be spaced away from the semiconductor body at least partially or even at every point.

[0009] In particular, the shaped body forms a back side of the semiconductor device opposite the radiation-emitting surface. For example, the shaped body is integrally formed with part of the contacts. The shaped body contains, for example, a polymer material such as an epoxy.

[0010] For example, the molded part is produced by a casting process. A casting process is generally understood to be a method by which a molding compound can be shaped according to a predetermined form and, if necessary, hardened. In particular, the term "casting process" includes casting, film-assisted molding, injection molding, transfer molding, and compression molding.

[0011] According to at least one embodiment of the semiconductor device, the semiconductor device has contacts for external electrical contacting. The contacts are accessible, in particular, on an outer surface of the device. For example, the contacts are accessible on a rear surface of the semiconductor device opposite a radiation-emitting surface. In particular, a radiation-transmitting surface of the semiconductor device is free of the contacts.

[0012] According to at least one embodiment of the semiconductor device, a deflection structure is arranged between the active region and the radiation emission surface of the semiconductor device. The deflection structure is specifically designed to deflect radiation incident upon it. In particular, the deflection structure is irregularly shaped in the lateral direction, so that, for example, radiation incident upon the deflection structure at the same angle but at different lateral locations is deflected at different angles.

[0013] A lateral direction is understood to be a direction that runs parallel to the radiation emission surface of the semiconductor device.

[0014] For example, the deflection structure is formed at a radiation transmission surface of the semiconductor body. The radiation transmission surface bounds the semiconductor body on the side facing the radiation emission surface of the semiconductor device.

[0015] According to at least one embodiment of the semiconductor device, a planarization layer is arranged on the deflection structure. The planarization layer is specifically designed to provide a flat, planar surface on the side facing the radiation emission surface of the semiconductor device. In particular, the planarization layer has a greater roughness on the side facing the semiconductor body than on the side facing away from the semiconductor body. For example, the planarization layer forms the radiation emission surface of the semiconductor device. However, the radiation emission surface can be provided with a coating, such as a passivation layer.

[0016] According to at least one embodiment of the semiconductor device, the semiconductor device has a polarizer. The polarizer is arranged, in particular, on a side of the planarization layer facing away from the semiconductor body. In particular, the polarizer is directly adjacent to the planarization layer. For example, the polarizer is designed as a grid polarizer. For example, the polarizer is formed by means of a metallic coating of the planarization layer.

[0017] In at least one embodiment of the semiconductor device, the semiconductor device comprises a radiation-emitting surface and a semiconductor body with an active region for generating radiation, wherein the semiconductor device includes a molded body integrally formed with the semiconductor body. Contacts for external electrical contacting of the semiconductor device are accessible on an outer surface of the molded body. A deflection structure is arranged between the active region and the radiation-emitting surface. A planarization layer is arranged on the deflection structure. The semiconductor device includes a polarizer arranged on a side of the planarization layer facing away from the semiconductor body.

[0018] The semiconductor device itself emits polarized radiation, in particular linearly polarized radiation. Polarization losses in a downstream imaging unit of a display device, for example in the form of a liquid crystal display, can thus be avoided.

[0019] According to at least one embodiment of the semiconductor device, the planarization layer has a roughness of at most 50 nm or at most 20 nm on a side facing away from the semiconductor body. The term roughness here refers to the root mean squared (rms) roughness. It has been shown that a polarizer applied directly to such a planarization layer exhibits a particularly high reflectivity for radiation components that are not transmitted by the polarizer, for example, a reflectivity of at least 90% or at least 95%. Absorption losses due to the polarizer can thus be reduced. Radiation components with the polarization that the polarizer does not transmit can therefore be reflected back towards the deflection structure and subsequently strike the polarizer again.

[0020] Preferably, the planarization layer contains a material that can be planarized by a mechanical process, such as grinding. For example, the planarization layer contains a polysiloxane. In contrast, materials typically used as matrix materials for phosphors, such as silicones, cannot be readily planarized mechanically.

[0021] The planarization layer, for example, is the only layer between the semiconductor body and the polarizer. This simplifies an efficient optical connection between the polarizer and the semiconductor body.

[0022] According to at least one embodiment of the semiconductor device, the base area of ​​the semiconductor device, viewed from above, is at most 30%, 20%, or 10% larger than the base area of ​​the semiconductor body. Thus, a large portion of the base area of ​​the semiconductor device is available for radiation generation within the semiconductor body, particularly in the active region. In contrast, the area of ​​the semiconductor body is much smaller than the base area of ​​the semiconductor device if the semiconductor device has a prefabricated housing into which a light-generating semiconductor chip is inserted.

[0023] According to at least one embodiment of the semiconductor device, the planarization layer incorporates a phosphor for the complete or at least partial conversion of the radiation generated in the active region into secondary radiation. The secondary radiation has a longer wavelength than the radiation generated in the active region. The planarization layer can therefore function as a radiation conversion element. The planarization layer can also incorporate two or more different phosphors, so that the secondary radiation contains components in different spectral ranges, for example, in the red and green spectral ranges. For instance, the semiconductor device emits mixed light that appears white to the human eye.

[0024] For example, the planarization layer is formed by a matrix material in which the phosphor is embedded.

[0025] The radiation conversion element can be located directly adjacent to the polarizer and / or the deflection structure.

[0026] According to at least one embodiment of the semiconductor device, the semiconductor body has a mirror structure on a side facing away from the radiation-emitting surface. The mirror structure is designed to reflect the radiation back towards the radiation-emitting surface of the semiconductor device. The mirror structure comprises, for example, at least one dielectric layer and a metallic contact layer, wherein the dielectric layer is arranged locally between the semiconductor body and the metallic contact layer. The refractive index of the dielectric layer is, in particular, lower than the refractive index of any material adjacent to the side of the dielectric layer facing the semiconductor body. This allows total internal reflection to occur at the dielectric layer.Radiation striking the dielectric layer at an angle smaller than the critical angle for total internal reflection at this surface can be reflected back by the metallic contact layer. This results in an overall omnidirectional mirror with high reflectivity. The higher the reflectivity of the mirror structure, the greater the chance that radiation which is not transmitted on the first impact with the polarizer is not lost, but rather exits the semiconductor device upon a subsequent impact with the polarizer.

[0027] According to at least one embodiment of the semiconductor device, the dielectric layer has a plurality of openings through which the metallic contact layer is electrically connected to the semiconductor body. The metallic contact layer thus extends into the openings.

[0028] The metallic contact layer can be electrically connected directly to the semiconductor body or via an intermediate layer, such as a current expansion layer.

[0029] According to at least one embodiment of the semiconductor device, the base area of ​​the mirror structure comprises at least 80% or at least 90% of the base area of ​​the semiconductor device. In other words, a large portion of the base area of ​​the semiconductor device, and thus also a large portion of the polarizer, is covered by the mirror structure. This simplifies the effective recovery of radiation components with the non-transmissible polarization.

[0030] According to at least one embodiment of the semiconductor device, the package body and the planarization layer exhibit traces of a singulation process on a side surface that bounds the semiconductor device laterally. For example, these traces are traces of material removal by a mechanical process, a chemical process, or a separation process using coherent radiation. Such traces are characteristic of a semiconductor device in which the package-forming body is manufactured in a composite with several semiconductor bodies and only acquires its shape, particularly its side surfaces, during singulation.

[0031] According to at least one embodiment of the semiconductor device, the semiconductor device has a thickness of at most 150 µm or at most 100 µm. The semiconductor device is therefore characterized by a particularly low profile.

[0032] Unless otherwise stated, thickness specifications refer to the extent of the respective element perpendicular to the radiation emission surface.

[0033] For example, the thickness of the planarization layer is at least 20% or at least 30% of the thickness of the semiconductor device. Alternatively or additionally, the thickness of the planarization layer is at least 120%, at least 200%, or at least 500% of the thickness of the semiconductor body.

[0034] Furthermore, a device with a semiconductor component is specified, wherein the semiconductor component may have one or more of the aforementioned features.

[0035] According to at least one embodiment of the device, the device comprises an optical fiber into which the radiation generated during operation is coupled. For example, the radiation is coupled via a side surface of the optical fiber. The device can also comprise several such semiconductor devices, wherein, for example, several semiconductor devices are arranged side by side in a row along a side surface of the optical fiber.

[0036] For example, the distance between the radiation emission surface of the semiconductor device and the light guide is at most 3 mm, or at most 2 mm, or at most 1 mm.

[0037] According to at least one embodiment of the device, a side surface of the planarization layer is covered by a boundary layer. The boundary layer prevents unpolarized radiation from escaping from the side surface of the planarization layer. For example, the boundary layer is formed by a potting compound in which the semiconductor device is embedded.

[0038] According to at least one embodiment of the device, the device is designed as a display device, in particular a light field display device.

[0039] The present application is based in particular on the idea that polarized light can be generated particularly efficiently if the semiconductor device itself has a polarizer. In particular, the following effects can be achieved.

[0040] The generation of polarized light is particularly efficient when the absorption losses within the semiconductor device are so low that efficient light recycling can take place.

[0041] In light recycling, also known as photon recycling, radiation that is not directly coupled out is absorbed and re-emitted. This provides an additional opportunity for the radiation to exit the polarizer with the polarization it is intended to transmit. The unwanted radiation components are thus reduced overall in favor of the desired radiation components. This significantly increases efficiency compared to an arrangement where a polarizer is a separate element downstream of a semiconductor device.

[0042] The deflection structure, especially in conjunction with the highly reflective mirror structure, promotes efficient light recycling.

[0043] Furthermore, the planarization layer, which can also function as a radiation conversion element, provides a planar surface on which a polarizer with high reflectivity for the unwanted polarity can be achieved. This further promotes efficient light recycling. On a non-planar surface, however, even a suitable material would only achieve comparatively low reflectivity and lead to strong absorption at the polarizer.

[0044] With a conventional arrangement of semiconductor devices and downstream polarizers, a polarization efficiency of less than 50% is achieved. With the described light recycling, significantly higher efficiencies can be achieved, for example 60% or more, or 70% or more.

[0045] Losses occurring at the polarizer take place relatively close to the semiconductor body. This is typically well thermally connected and, for example, in contact with a heat sink. Compared to a polarizer as a separate element, this simplifies heat dissipation.

[0046] Furthermore, the described structure allows for the creation of semiconductor devices where the radiation emission area of ​​the semiconductor device is only slightly larger than the base area of ​​the light-generating semiconductor body. This enables high packing density and high efficiency.

[0047] Furthermore, a method for manufacturing semiconductor devices is described. This method is particularly suitable for manufacturing a semiconductor device as described above. Features described in connection with the semiconductor device can therefore also be applied to the method, and vice versa.

[0048] According to at least one embodiment of the method, the method for manufacturing a plurality of semiconductor devices comprises the following steps, in particular in the specified order.

[0049] A semiconductor assembly comprising multiple semiconductor bodies is provided. A planarization layer is formed on the semiconductor assembly. A polarizer layer is formed on the planarization layer. The semiconductor assembly, including the planarization layer and the polarizer layer, is then isolated into multiple semiconductor devices.

[0050] The manufacturing of semiconductor components, especially the formation of polarizers, therefore takes place in a multi-component assembly. This allows for the particularly efficient and cost-effective production of even small semiconductor components.

[0051] In particular, the shaped bodies of the semiconductor components are only formed during singulation. For example, during singulation, the planarization layer and a shaped body assembly are cut through. The shaped body assembly is formed on the semiconductor body assembly, for example, by a casting process. This occurs, in particular, after contacts for connecting the semiconductor bodies of the semiconductor body assembly have already been at least partially formed. The shaped body assembly thus forms the contacts and, in particular, fills the spaces between the contacts.

[0052] According to at least one embodiment of the method, the planarization layer is planarized before the polarizer layer is formed. A mechanical method, such as grinding, lapping, or polishing, is suitable for this purpose.

[0053] Further designs and advantages will become apparent from the following description of the exemplary embodiments in conjunction with the figures.

[0054] They show: the Fig. 1A and Fig. 1B an embodiment of a semiconductor device in a schematic sectional view ( Fig. 1A) and in top view ( Fig. 1B); Fig. 2 an embodiment of a device; and the Fig. Figures 3A to 3D show an exemplary embodiment of a method for manufacturing semiconductor components based on intermediate steps shown in schematic sectional view.

[0055] Identical, similar, or similarly effective elements in the figures are provided with the same reference symbols.

[0056] The figures are schematic representations and therefore not necessarily to scale. Rather, comparatively small elements and especially layer thicknesses may be exaggerated for clarity.

[0057] The in the Fig. 1A and Fig. The semiconductor device 1 shown in Figure 1B has a radiation emission surface 10 and a back surface 15 opposite the radiation emission surface. The semiconductor device 1 has a semiconductor body 2 with an active region 20 for generating radiation, wherein the active region 20 is arranged between a first semiconductor layer 21 and a second semiconductor layer 22. For example, the first semiconductor layer is n-type and the second semiconductor layer is p-type, or vice versa.

[0058] Furthermore, the semiconductor device 1 has a deflection structure 29. The deflection structure 29 is formed on a radiation transmission surface 23 of the semiconductor body 2. The deflection structure 29 is formed, for example, as an irregular roughening of the radiation transmission surface 23. The deflection structure 29 can be formed, for example, by a chemical or a mechanical process.

[0059] The semiconductor device 1 further comprises a shaped body 4 which is integrally formed with the semiconductor body 2. In particular, several electrically conductive and electrically insulating layers for electrical contacting the semiconductor device 1 are located between the semiconductor body 2 and the shaped body 4. An outer surface 43 of the shaped body 4 is formed by a back surface 45 of the shaped body 4 and a side surface 46 of the shaped body.

[0060] The side surface 46 of the shaped body 4 forms in places a side surface 16 that limits the semiconductor device 1 in a lateral direction.

[0061] The back side 45 of the molded body forms the back side 15 of the semiconductor device.

[0062] On the outer surface 43, in this case on the rear surface 45 of the molded body 4, a first contact 31 for electrically connecting the first semiconductor layer 21 and a second contact 32 for electrically connecting the second semiconductor layer 22 are accessible. Alternatively, the contacts 31, 32 can also be located on one of the side surfaces 16.

[0063] The semiconductor device 1 is designed in particular as a surface mounted device (smd).

[0064] The first contact 31 and the second contact 32 each have a first contact surface 310 and a second contact surface 320 respectively, which are exposed for external electrical contacting.

[0065] The first contact 31 and the second contact 32 are each multi-layered. In the illustrated embodiment, the first contact surface 310 of the first contact 31 and the second contact surface 320 of the second contact 32 are formed by means of a first contact surface layer 315 and a second contact surface layer 325, respectively. These contact surface layers overlap the molded body 4 in some areas and are located in some areas on the rear side 45 of the molded body 4. Alternatively, separate contact surface layers can be omitted, so that the first contact 31 and the second contact 32 are flush with the rear side 15 of the molded body 4.

[0066] The specific design of the contacts 31, 32 can be varied within wide limits, particularly with regard to their layer sequence and arrangement, as long as charge carriers can be injected into the active area from opposite sides via the contacts.

[0067] The molded body 4 optionally contains a filler 41, for example to adjust the optical and / or thermal properties of the molded body. For example, a black epoxy is suitable for the molded body.

[0068] The first semiconductor layer 21, located on the side of the active region 20 facing the radiation emission surface 10, is electrically contacted from the rear side 15 of the semiconductor device 1 via the first contact 31. The radiation transmission surface 23 of the semiconductor body 2, formed by the first semiconductor layer 21, is free of material for electrical contacting the first semiconductor layer. This avoids shading of the radiation transmission surface 23 by metallic layers for electrical contacting the semiconductor body 2. Furthermore, a low profile of the semiconductor device can be achieved more easily.

[0069] In the illustrated embodiment, the semiconductor body 2 has a recess 25 which extends through the second semiconductor layer 22 and the active region 20 into the first semiconductor layer 21. The first semiconductor layer 21 is electrically connected in the recess 25, for example by means of a terminal layer 311 of the first contact 31.

[0070] Furthermore, the first semiconductor layer 21 is electrically contacted on a side surface 26 of the semiconductor body 2. This electrical contact extends in a frame-like manner around the semiconductor body 2, for example, along the entire circumference of the semiconductor body 2. However, the type of electrical contact of the first semiconductor layer 21 can be varied within wide limits. For example, the electrical contact of the first semiconductor layer 21 can be made only via the side surface of the first semiconductor layer 21 or only by means of one or more recesses 25.

[0071] The connection layer 311 is connected to the first contact surface layer 315 via a first contact layer 314.

[0072] For the electrical contacting of the second semiconductor layer 22, the second contact 32 has, by way of example, a current expansion layer 321, a metallic connection layer 323, a second contact layer 324 and the contact surface layer 325.

[0073] The current expansion layer 321 is adjacent to the second semiconductor layer 22. For example, the current expansion layer contains a transparent conductive oxide (TCO), such as indium tin oxide (ITO) or zinc oxide (ZnO).

[0074] A dielectric layer 322 is arranged in certain areas between the second semiconductor layer 22 and the metallic connection layer 323. The dielectric layer 322 has openings 3220. In these openings 3220, the metallic connection layer 323 establishes an electrical contact with the second semiconductor layer 22, in the illustrated embodiment via the current-expansion layer 321.

[0075] The dielectric layer 322, together with the metallic contact layer 323, forms a mirror structure 7. The mirror structure 7 is characterized by a particularly high reflectivity, since radiation incident on the mirror structure 7 at a comparatively large angle to the normal can be reflected almost without loss by total internal reflection. Radiation components incident at an angle smaller than the critical angle for total internal reflection can pass through the dielectric layer 323, but are subsequently reflected at the metallic contact layer 323.

[0076] For example, the metallic contact layer 323 contains or consists of silver. Silver is characterized by a particularly high reflectivity in the visible spectral range. However, other metals can also be used, especially depending on the radiation to be generated by the active region 20.

[0077] To prevent an electrical short circuit between the first contact 31 and the second semiconductor layer 22, the semiconductor device 1 has a first insulating layer 71. The first insulating layer covers, in particular, otherwise exposed side surfaces of the active area 20 and the second semiconductor layer 22, especially in the area of ​​the side surface 26 of the semiconductor body and in the area of ​​the recess 25.

[0078] Furthermore, the semiconductor device 1 has a second insulating layer 72 for electrical insulation between the first contact 31 and the second contact 32.

[0079] During the manufacturing of the semiconductor device, the shaped body 4 is only formed from a composite during the singulation process. The side surfaces 16 of the semiconductor device 1 may therefore show traces of a singulation process. Fig. 1A represented by traces 161 in an enlarged section of the side surface 16. In particular, such traces may be present on the entire side surface 16 of the semiconductor device 1, for example also on the planarization layer.

[0080] A planarization layer 5 is arranged on the deflection structure 29. The planarization layer 5 smooths the irregularities of the deflection structure 29 and exhibits a particularly low roughness on the side facing away from the semiconductor body 2, i.e., at the radiation emission surface 10 of the semiconductor device 1, for example, a roughness of at most 50 nm or at most 20 nm. The planarization layer contains a material that can be planarized after the layer has been formed by a mechanical process, for example, a polysiloxane.

[0081] Furthermore, the semiconductor device has a polarizer 6, for example in the form of a grid polarizer, which is arranged on a side of the planarization layer 5 facing away from the semiconductor body 2. The semiconductor device 1 thus emits linearly polarized radiation.

[0082] In particular, the planarization layer 5 can be directly adjacent to the polarizer 6. For example, the polarizer 6 is designed as a metallic coating of the planarization layer 5.

[0083] For example, polarizer 6 contains silver or is made of silver. As a result, polarizer 6, especially in combination with the low roughness of the planarization layer 5, can exhibit high reflectivity for the radiation components with the polarization that should not be transmitted.

[0084] Separate polarizers downstream of the semiconductor device 1 in the direction of emission can be omitted. Unlike with a downstream polarizer, radiation components with the non-transmittable polarization are not largely lost, but can, due to the design of the semiconductor device 1, be at least partially converted into transmittable radiation components through light recycling.

[0085] In the illustrated embodiment, the planarization layer 5 comprises a phosphor 50 for converting the radiation generated in the active area 20 into secondary radiation. The planarization layer thus also fulfills the function of a radiation conversion element. For example, the phosphor is embedded in a matrix material that can be smoothed, particularly by a mechanical process. Polysiloxane, for instance, is suitable for this purpose. A planarization layer 5 acting as a radiation conversion element has, for example, a thickness between 20 µm and 100 µm.

[0086] For example, the planarization layer 5 contains a phosphor that emits in the red spectral range and a phosphor that emits in the green spectral range. Together with radiation in the blue spectral range generated in the active region 20, the semiconductor device 1 thus provides mixed light that appears white to the human eye.

[0087] However, the planarization layer 5 can also be free of phosphors, so that the semiconductor device 1 only emits the radiation generated in the active region 20. In this case, the planarization layer can also have a smaller thickness, for example 20 µm or less.

[0088] From the top view in Fig. Figure 1B shows that the base area 28 of the semiconductor body 2 is only slightly smaller than the base area 18 of the semiconductor device. This means that almost the entire base area of ​​the semiconductor device 1, for example at least 80% or at least 90%, can be used for radiation generation.

[0089] Furthermore, almost the entire radiation emission surface 10, and thus the surface of the polarizer 6, is covered with the mirror structure 7. Overall, this allows for particularly low absorption losses within the semiconductor device 1. This enables efficient light recycling.

[0090] In Fig. Figure 2 shows an embodiment of a device 9 with such a semiconductor device 1.

[0091] In particular, the device 9 comprises a plurality of such semiconductor devices 1, wherein the semiconductor devices 1 are, for example, arranged side by side in a row. The device 9 further comprises an optical fiber 95. The optical fiber 95 is expediently polarization-preserving.

[0092] The radiation generated by the semiconductor device 1 is coupled via a side surface of the optical fiber 95. With the described configuration of the semiconductor device 1, efficient radiation coupling can also be achieved in comparatively thin optical fibers, for example, with a thickness of 2 mm, 1 mm, or 0.8 mm. An optical element for radiation coupling can be arranged between the semiconductor device 1 and the optical fiber 95 (not shown).

[0093] An imaging module 99 can be backlit with polarized radiation using the light guide 9. Due to the compact design of the semiconductor components 1, these can be densely packed along the side surface of the light guide. High luminous fluxes can be provided for coupling onto the side surface of the light guide 95, for example, 120 lm / cm² or more. The brightness per emission area is, for example, 1000 lm / cm². 2 .

[0094] The semiconductor devices 1 are arranged on a mounting carrier 92. Optionally, the semiconductor devices 1 can be surrounded by an edge layer 91. For example, the edge layer is a potting compound in which reflective particles, such as titanium dioxide, are embedded.

[0095] The boundary layer 91 covers in particular the side surface of the planarization layer 5. This prevents the unwanted emission of unpolarized radiation through the side surface of the semiconductor device 1.

[0096] In particular, the described semiconductor components 1 can achieve a brightness sufficient for the realization of light field display devices.

[0097] An exemplary embodiment of a method for manufacturing semiconductor devices is described in the Fig. Figures 3A to 3D are shown schematically, with each figure depicting only a section from which exactly one semiconductor device 1 is produced during manufacturing. The process is described using the example of a semiconductor device, as described in connection with Fig. 1A is described as being formed. For simplified representation, the following are included in the Fig. 3A to 3C do not provide all elements with reference symbols.

[0098] In the process, a semiconductor body assembly 200 is provided, wherein the subsequent shaped bodies of the semiconductor devices 1 are also present in a shaped body assembly 40 ( Fig. 3A). In the stage shown, a growth substrate for the semiconductor layer sequence of the semiconductor body assembly 200 has already been removed. A center-to-center distance between adjacent semiconductor bodies of the semiconductor body assembly 200 preferably corresponds to the original center-to-center distance of the semiconductor bodies on the growth substrate.

[0099] The semiconductor body composite, for example, has a thickness between 2 µm and 10 µm.

[0100] A planarization layer 5 is formed on the semiconductor body composite 200. Subsequently, the planarization layer 5 is smoothed, for example by means of a mechanical process ( Fig. 3B).

[0101] A polarizer layer 60 is applied to the planarization layer 5, in particular deposited, for example by vapor deposition or sputtering ( Fig. 3C).

[0102] Finally, the semiconductor body assembly 200 with the planarization layer 5 and the polarization layer 60 is isolated into the majority of semiconductor devices. This is in Fig. 3D illustrated using singulation lines 201.

[0103] During the production of the semiconductor devices 1, these already exhibit a polarizer 6 at the radiation emission surface when the semiconductor body assembly is separated. The formation of the polarizer 6 therefore takes place while the device is still assembled.

[0104] Singulation is achieved, for example, by sawing, chemically, for example by etching, or by using a laser cutting process.

[0105] The completed semiconductor components 1 correspond, incidentally, to the one based on the Fig. 1A and Fig. 1B described embodiment. In particular, the planarization layer 5 can be as described in connection with Fig. 1A describes having one or more phosphors. Reference symbol list 1 Semiconductor device 10 Radiation emission surface 15 Back 16 side surface 161 tracks 18 Base area of ​​the semiconductor device 2 Semiconductor bodies 20 active area 200 semiconductor body composite 201 Singling line 21 first semiconductor layer 22 second semiconductor layer 23 Radiation transmission area 25 Exclusion 26 side surface 28 Base area of ​​the semiconductor body 29 Diversion structure 31 first contact 310 first contact surface 311 Connection layer 314 first contact layer 315 first contact surface layer 32 second contact 320 second contact surface 321 Current expansion layer 322 dielectric layer 3220 Opening 323 metallic connection layer 324 second contact layer 325 second contact surface layer 4 molded bodies 40 Molded Body Composite 41 Filler 43 Outer surface of the molded body 45 Back of the molded body 46 Side surface of the molded body 5 Planarization layer 50 fluorescent 6 Polarizer 60 Polarizer layer 7 Mirror structure 70 Base area of ​​the mirror structure 9 Device 91 Edge layer 92 mounting brackets 95 fiber optic cables 99 Imaging module

Claims

[1] Semiconductor device (1) with a radiation emission surface (10) and a semiconductor body (2) with a first semiconductor layer (21) and a second semiconductor layer (22), and an active region (20) arranged between the first semiconductor layer (21) and the second semiconductor layer (22) for generating radiation, wherein - the semiconductor device has a shaped body (4) which is integrally formed with the semiconductor body; - Contacts (31, 32) for external electrical contacting of the semiconductor component are accessible on an outer surface (43) of the molded body; - a deflection structure (29) is arranged between the active area and the radiation exit surface; - a planarization layer (5) is arranged on the deflection structure; - the semiconductor device has a polarizer (6) which is arranged on a side of the planarization layer facing away from the semiconductor body; and - the semiconductor body (2) has a mirror structure (7) on a side facing away from the radiation emission surface (10) with at least one dielectric layer (322) and a metallic contact layer (323), wherein the dielectric layer (322) is arranged locally between the semiconductor body (2) and the metallic contact layer (323); and - a current expansion layer (321) is adjacent to the second semiconductor layer (22). [2] Semiconductor device according to claim 1, wherein the planarization layer has a roughness of at most 50 nm on a side facing away from the semiconductor body and the polarizer is directly adjacent to the planarization layer. [3] Semiconductor device according to one of the preceding claims, wherein a base area (18) of the semiconductor device in top view of the semiconductor device is at most 30% larger than a base area (28) of the semiconductor body. [4] Semiconductor device according to one of the preceding claims, wherein the planarization layer comprises a phosphor (50) for the at least partial conversion of the radiation generated in the active region into secondary radiation. [5] Semiconductor device according to one of the preceding claims, wherein the dielectric layer has a plurality of openings (3220) through which the metallic contact layer is electrically connected to the semiconductor body. [6] Semiconductor device according to claim 5, wherein a base area (70) of the mirror structure comprises at least 80% of a base area (18) of the semiconductor device. [7] Semiconductor device according to one of the preceding claims, wherein the base body and the planarization layer have traces (161) of a singulation method on a side surface (16) that bounds the semiconductor device in a lateral direction. [8] Semiconductor device according to any of the preceding claims, wherein the semiconductor device has a thickness of at most 100 µm. [9] Semiconductor device according to any of the preceding claims, wherein the current expansion layer (321) contains a transparent conductive oxide. [10] Device (9) comprising a semiconductor device (1) according to one of the preceding claims and a light guide (95) into which the radiation generated during operation is coupled. [11] Device according to claim 10, wherein a side surface of the planarization layer is covered by a boundary layer (91). [12] Device according to claim 10 or 11, wherein the device is designed as a display device, in particular a light field display device. [13] A method comprising the production of a plurality of semiconductor devices according to any of the preceding claims, comprising the steps of: a) Providing a semiconductor body assembly (200) with a plurality of semiconductor bodies (2), wherein the semiconductor bodies (2) have a first semiconductor layer (21) and a second semiconductor layer (22), as well as an active region (20) arranged between the first semiconductor layer (21) and the second semiconductor layer (22) for generating radiation, and the semiconductor bodies (2) have a mirror structure (7) on a side facing away from the radiation emission surface (10) with at least one dielectric layer (322) and a metallic contact layer (323), wherein the dielectric layer (322) is arranged locally between the semiconductor body (2) and the metallic contact layer (323), and a current expansion layer (321) adjoins the second semiconductor layer (22); b) Forming a planarization layer (5) on the semiconductor body composite; c) Forming a polarizer layer (60) on the planarization layer; and d) Separating the semiconductor body assembly with the planarization layer and the polarizer layer into the plurality of semiconductor devices (1). [14] Method according to claim 13, wherein the planarization layer is planarized prior to the formation of the polarizer layer. [15] Method according to claim 13 or 14, wherein a semiconductor device according to any one of claims 1 to 9 is manufactured.

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