Dicing or singulation device, semiconductor chip manufacturing process and semiconductor chip

Abstract

A singulation device (1) includes a table unit (12) to move and rotate a wafer (W1), a laser emitter (13a) to emit a laser beam onto the wafer (W1), an imager (14) to image a plurality of orientation marks of a plurality of semiconductor chips on the wafer (W1), and a height gauge (15) to measure a height position of a surface or area of ​​the wafer (W1).

Description

[0001] Title of the invention: Dicing or separating device, semiconductor chip manufacturing method and semiconductor chip Technical area

[0002] The present invention relates to a dicing apparatus, a semiconductor chip manufacturing method, and a semiconductor chip, and more particularly relates to a dicing apparatus including a laser emitter for emitting a laser beam, a semiconductor chip manufacturing method, and a semiconductor chip. Technical background

[0003] Conventionally, a dicing device is known that includes a laser emitter for emitting a laser beam. Such a dicing device is disclosed, for example, in Japanese Patent Laid-Open No. 2019-016731.

[0004] Japanese Patent Laid-Open No. 2019-016731 ​​discloses a laser processing apparatus including a laser beam irradiation unit for emitting a laser beam. The laser processing apparatus includes a chuck table and an imaging unit.

[0005] The chuck table holds a wafer. The imaging unit images the wafer held by the chuck table. In the laser processing apparatus, after the wafer is held by the chuck table, the coordinates of an edge of the wafer are detected based on an image of the edge of the wafer captured by the imaging unit. In the laser processing apparatus, the center position of the wafer detected based on three or more sets of coordinates of the edge of the wafer is aligned with the predetermined center position of the chuck table. Thus, the position of the wafer is adjusted in a horizontal direction. State of the artPatent document

[0006] Patent Document 1: Japanese Patent Laid-Open No. 2019-016731 ​​Summary of the Invention Problem to be solved by the invention

[0007] In the laser processing apparatus disclosed in Japanese Patent Laid-Open No. 2019-016731, the imaging unit is used to adjust only the position of the wafer in the horizontal direction, and thus it is not possible to adjust the focus of the laser beam emitted from the laser beam irradiation unit on the wafer.

[0008] The present invention has been proposed to solve the above-mentioned problem, and an object of the present invention is to provide a dicing device capable of adjusting the position of a wafer in a horizontal direction and adjusting the focus of a laser beam emitted from a laser emitter on the wafer. Means to solve the problem

[0009] A dicing apparatus according to a first aspect of the present invention includes a stage unit for moving a wafer including a plurality of semiconductor chips in at least one of a first direction in a horizontal direction or a second direction in the horizontal direction perpendicular to the first direction and rotating the wafer while holding the wafer, a laser irradiator for emitting a laser beam onto the wafer being moved or rotated while being held by the stage unit to dicing the wafer into the plurality of semiconductor chips, an imager for imaging a plurality of alignment marks of the plurality of semiconductor chips on the wafer, and an altimeter for measuring a height position of a surface of the wafer.The term “singling” represents a broader concept that includes not only cutting a wafer into a plurality of semiconductor chips with a laser beam, but also forming a modified layer in the wafer with the laser beam and then dividing the wafer along the modified layer.

[0010] As described above, the dicing device according to the first aspect of the present invention includes the imager for imaging the plurality of alignment marks of the plurality of semiconductor chips on the wafer, and the altimeter for measuring the height position of the wafer surface. Accordingly, based on the alignment marks imaged by the imager, the wafer is moved and / or rotated by the stage unit such that the position of the wafer in the horizontal direction can be adjusted. Furthermore, the height position of the wafer surface can be detected based on the height position measured by the altimeter, and thus the focus of the laser beam emitted from the laser irradiator on the wafer can be adjusted based on the height position of the wafer surface.Accordingly, the position of the wafer in the horizontal direction can be adjusted and the focus of the laser beam emitted from the laser emitter on the wafer can be adjusted.

[0011] The dicing device according to the first aspect preferably further includes a controller configured or programmed to control the imager to image the plurality of alignment marks while simultaneously controlling the altimeter to measure height positions of the wafer. Accordingly, the height positions of the wafer surface can be detected at positions where the alignment marks are imaged by the imager, and thus, an increase in the number of times the wafer is moved in the first direction and the second direction in the horizontal direction by the stage unit can be reduced or prevented, compared to a case where the alignment marks are imaged by the imager at positions different from the positions where the height positions of the wafer surface are detected.

[0012] In such a case, the imager preferably includes an imager lifting mechanism for moving the imager in an up-down direction to adjust an imaging focus of the imager, and the controller is preferably configured or programmed to perform control to detect positions of two alignment marks, which are imaged when the imaging focus of the imager is adjusted, among the plurality of alignment marks by moving the imager in the up-down direction using the imager lifting mechanism to adjust the imaging focus to adjust a position of the wafer in the horizontal direction. Accordingly, the two actual alignment marks on the wafer can be clearly imaged by the imager, and thus the two alignment marks can be accurately identified compared to other configurations.Therefore, the position of the wafer in the horizontal direction can be adjusted based on the two precise alignment marks, and thus the position of the wafer in the horizontal direction can be adjusted accurately.

[0013] In the singulation device including the controller configured or programmed to control the imager to image the alignment marks while simultaneously controlling the altimeter to measure height positions of the wafer, the imager and the altimeter are preferably linearly aligned in a predetermined direction in which a first alignment mark and a second alignment mark among the plurality of alignment marks are aligned. Accordingly, at a position where the first alignment mark is imaged by the imager, the altimeter can measure the height position offset in the predetermined direction. Further, at a position where the second alignment mark is imaged by the imager, the altimeter can measure the height position offset in the predetermined direction.Thus, the inclination of a straight section passing through the two height positions on the wafer with respect to the horizontal direction can be detected. When the two height positions are measured, the first alignment mark and the second alignment mark are imaged in parallel, allowing information to be acquired to determine whether the first alignment mark and the second alignment mark were imaged by the imager when the wafer is excessively tilted and it is difficult to adjust the imaging focus of the imager.

[0014] In the singulating device including the imager and the altimeter that are linearly aligned in the predetermined direction, the controller is preferably configured or programmed to control orPerform control to detect whether or not the first alignment mark and the second alignment mark have been imaged based on a difference between a first height position of a portion of the wafer offset in the predetermined direction from a first arrangement position at which the first alignment mark is arranged and a second height position of a portion of the wafer offset in the predetermined direction from a second arrangement position at which the second alignment mark is arranged, when a straight portion passing through the first height position and the second height position of the wafer is inclined outside an allowable range with respect to the horizontal direction.Accordingly, it is possible to identify whether the first alignment mark and the second alignment mark have been imaged by the imager based on the difference between the first height position and the second height position when the straight section passing through the two height positions on the wafer is excessively tilted. Therefore, it is possible to identify whether the first alignment mark and the second alignment mark have been imaged by the imager when the wafer is excessively tilted to such an extent that it is difficult to adjust the imaging focus of the imager.

[0015] In the singulating device including the controller configured or programmed to detect whether the first alignment mark and the second alignment mark have been imaged or not when the straight portion passing through the first height position and the second height position of the wafer is inclined outside the allowable range with respect to the horizontal direction, the controller is preferably configured or programmed to control orPerform control to image the first alignment mark after adjusting the imaging focus of the imager at a position where the first alignment mark is imaged at the first arrangement position based on the first height position of the wafer using the imager lifting mechanism, and to image the second alignment mark after adjusting the imaging focus of the imager at a position where the second alignment mark is imaged at the second arrangement position based on the second height position of the wafer using the imager lifting mechanism.Accordingly, the imaging focus of the imager arranged at the position where the first alignment mark is imaged at the first arrangement position is adjusted based on the first height position of the portion of the wafer offset in the predetermined direction from the first arrangement position where the first alignment mark is arranged, and thus it is difficult to image the first alignment mark with the imaging focus adjusted unless the surface of the wafer is approximately horizontal.Furthermore, the imaging focus Fc1 of the imager arranged at the position where the second alignment mark is imaged at the second arrangement position is adjusted based on the second height position of the portion of the wafer offset in the predetermined direction from the second arrangement position where the second alignment mark is arranged, and thus it is difficult to image the second alignment mark with the imaging focus adjusted unless the surface of the wafer is approximately horizontal.Thus, when the difference between the first height position and the second height position is within the allowable range and the wafer surface is approximately horizontal, the first alignment mark and the second alignment mark are imaged with the imaging focus adjusted, and thus the position of the wafer in the horizontal direction can be adjusted based on the first alignment mark and the second alignment mark. Accordingly, it is possible to prevent an imaging process for imaging alignment marks other than the first alignment mark and the second alignment mark from being performed, and thus an increase in processing time in the dicing device can be reduced or prevented.

[0016] In the singulation device including the controller configured or programmed to perform control to image the first alignment mark after the imaging focus is adjusted based on the first height position, and to image the second alignment mark after the imaging focus is adjusted based on the second height position, the controller is preferably configured or programmed to perform control to determine a height plane of the wafer based on the first height position, the second height position, and a third height position measured by the altimeter at an arrangement position of a third alignment mark that is not on a straight line extending in the predetermined direction.Accordingly, the imaging focus of the imager for imaging the plurality of alignment marks on the wafer can be precisely adjusted based on the wafer's height plane, allowing the imager to clearly image the alignment marks. Furthermore, the laser focus of the laser beam emitted by the laser irradiator can be adjusted to a position according to the wafer's height plane using the wafer's height plane, allowing the laser beam to be processed at a suitable position on the wafer.

[0017] In the singulation device including the controller configured or programmed to detect the height level of the wafer, the controller is preferably configured or programmed to perform, when the difference between the first height position and the second height position is outside an allowable range, a control to enable position adjustment of the wafer in the horizontal direction based on the third alignment mark imaged by the imager with the imaging focus set based on a detected height level and the first alignment mark or the second alignment mark imaged by the imager with the imaging focus set based on the detected height level.Accordingly, the third alignment mark and the first alignment mark or the second alignment mark can be imaged by the imager with the imaging focus precisely adjusted based on the wafer's height plane, thus clearly imaging the third alignment mark and the first alignment mark or the second alignment mark. Accordingly, the position of the third alignment mark and the position of the first alignment mark or the position of the second alignment mark can be reliably detected, and thus the stage unit moves and / or rotates the wafer in such a way that the wafer's position adjustment in the horizontal direction is enabled.

[0018] In the dicing device including the controller configured or programmed to detect the height plane of the wafer, the controller is preferably configured or programmed to control the altimeter to measure the third height position without imaging the third alignment mark at the arrangement position of the third alignment mark using the imager when the difference between the first height position and the second height position is within an allowable range. Accordingly, even if the third alignment mark is not imaged, the position of the wafer in the horizontal direction can be adjusted based on the first alignment mark and the second alignment mark, and thus the processing time in the dicing device can be reduced by the time required to image the third alignment mark.

[0019] The singulation device, which includes the controller configured or programmed to detect the height level of the wafer, preferably further includes a laser lifting mechanism for moving the laser emitter in the up-down direction to adjust a laser focus of the laser beam, and the controller is preferably configured or programmed to perform control to emit the laser beam onto the wafer while adjusting the laser focus, while simultaneously adjusting a height position of the laser emitter based on the height level of the wafer using the laser lifting mechanism, which is determined based on height positions of three points on the wafer measured by the altimeter.Accordingly, the height position of the laser emitter is adjusted by the laser lifting mechanism based on the height level of the wafer, so that the laser focus of the laser beam emitted from the laser emitter can be adjusted to a suitable position according to the height level of the wafer. Thus, compared to a case where the table unit including the mechanism for moving and rotating the wafer in the first direction and the second direction in the horizontal direction is moved in the up-down direction, an increase in the driving force of a drive source required for the lifting mechanism can be reduced or prevented. Therefore, a relatively small drive source can be used for the lifting mechanism, and an increase in the size of the dicing device can be reduced or prevented.

[0020] In the dicing device according to the first aspect, the imager preferably includes an infrared camera. Accordingly, it is possible to image infrared light reflected by the alignment marks provided on the wafer and transmitted through the wafer, and thus, even if the alignment marks are provided on the side of the wafer closer to the film member, it is possible to image the alignment marks provided on the wafer. Furthermore, even if the alignment marks are provided on the side of the wafer opposite the film member, it is possible to image the infrared light reflected by the alignment marks, and thus, the alignment marks provided on the wafer can be imaged.Accordingly, the alignment marks can be imaged both when the alignment marks are provided on the side of the wafer closer to the foil member and when the alignment marks are provided on the side of the wafer opposite the foil member.

[0021] In the dicing device including the imager and the altimeter linearly aligned in the predetermined direction, the imager preferably includes a first camera and a second camera, the first camera preferably has a wider angle of view than the second camera, and the second camera preferably has a higher resolution than the first camera. Accordingly, when a plurality of wafers of the same type are processed in the dicing device, the accuracy of positioning the wafer in the horizontal direction was not confirmed when processing the first wafer. Thus, the first camera capable of imaging the wafer with a wider angle of view is used when imaging the first alignment mark and the second alignment mark, so that the first alignment mark and the second alignment mark can be imaged more reliably.Furthermore, when a plurality of wafers of the same type are processed in the dicing device, the first alignment mark and the second alignment mark are imaged a plurality of times by the first camera until the exact positions of the first alignment mark and the second alignment mark can be detected, and then the first alignment mark and the second alignment mark can be imaged by the second camera. Thus, after the first alignment mark and the second alignment mark can be reliably imaged, the first alignment mark and the second alignment mark can be clearly imaged.

[0022] A semiconductor chip manufacturing method according to a second aspect of the present invention includes imaging, by an imager, a plurality of alignment marks of a plurality of semiconductor chips on a wafer, measuring, by an altimeter, a height position of a surface of the wafer, and emitting a laser beam onto the wafer from a laser irradiator operable to emit the laser beam to dicing the wafer into the plurality of semiconductor chips. The term "dingling" represents a broader concept that includes not only dicing a wafer into a plurality of semiconductor chips with a laser beam, but also forming a modified layer in the wafer with the laser beam and then dividing the wafer along the modified layer.

[0023] As described above, the semiconductor chip manufacturing method according to the second aspect of the present invention includes imaging, by the imager, the plurality of alignment marks of the plurality of semiconductor chips on the wafer and measuring, by the altimeter, the height position of the surface of the wafer. Accordingly, the position of the wafer in the horizontal direction can be adjusted based on the alignment marks imaged by the imager. Furthermore, the height position of the surface of the wafer can be detected based on the height position measured by the altimeter, and thus the laser focus of the laser beam emitted from the laser irradiator on the wafer can be adjusted based on the height position of the surface of the wafer.Accordingly, it is possible to obtain the semiconductor chip manufacturing method which enables to adjust the position of the wafer in the horizontal direction and to adjust the focus of the laser beam emitted from the laser emitter on the wafer.

[0024] A semiconductor chip according to the third aspect of the present invention is manufactured by a dicing apparatus including a stage unit for moving a wafer including a plurality of semiconductor chips in at least one of a first direction in a horizontal direction or a second direction in the horizontal direction perpendicular to the first direction and rotating the wafer while holding the wafer, a laser irradiator for emitting a laser beam onto the wafer being moved or rotated while being held by the stage unit to dice the wafer into the plurality of semiconductor chips, an imager for imaging a plurality of alignment marks of the plurality of semiconductor chips on the wafer, and an altimeter for measuring a height position of a surface of the wafer.

[0025] As described above, the semiconductor chip according to the third aspect of the present invention is manufactured by the dicing device including the imager for imaging the plurality of alignment marks of the plurality of semiconductor chips on the wafer and the altimeter for measuring the height position of the wafer surface. Accordingly, based on the alignment marks imaged by the imager, the wafer is moved and / or rotated by the stage unit such that the position of the wafer in the horizontal direction can be adjusted. Furthermore, the height position of the wafer surface can be detected based on the height position measured by the altimeter, and thus the laser focus of the laser beam emitted from the laser irradiator on the wafer can be adjusted based on the height position of the wafer surface.Accordingly, it is possible to obtain the semiconductor chip manufactured by the dicing device capable of adjusting the position of the wafer in the horizontal direction and adjusting the laser focus of the laser beam emitted from the laser emitter on the wafer. Advantageous effects of the invention

[0026] According to the present invention, as described above, it is possible to adjust the position of the wafer in the horizontal direction and to adjust the focus of the laser beam emitted from the laser emitter on the wafer. Brief description of the drawings [ Fig. 1] A plan view showing a semiconductor wafer processing apparatus including a dicing device and a stretching device according to a first embodiment. [ Fig. 2] A plan view showing a wafer ring structure to be processed in the semiconductor wafer processing apparatus according to the first embodiment. [ Fig. 3] A sectional view along the line III-III in Fig. 2. [ Fig. 4] A plan view of the separating device arranged adjacent to or adjacent to the stretching device according to the first embodiment. [ Fig. 5] A side view showing the separating device arranged adjacent to or adjacent to the stretching device according to the first embodiment when viewed from the Y2 direction side. [ Fig. 6] A plan view of the stretching device according to the first embodiment. [ Fig. 7] A side view showing the stretching device according to the first embodiment when viewed from the Y2 direction side. [ Fig. 8] A side view showing the stretching device according to the first embodiment when viewed from the X1 direction side. [ Fig. 9] A block diagram showing the control configuration of the semiconductor wafer processing apparatus according to the first embodiment. [ Fig. 10] A flowchart of the first half of a semiconductor chip manufacturing process of the semiconductor wafer processing apparatus according to the first embodiment. [ Fig. 11] A flowchart of the second half of the semiconductor chip manufacturing process of the semiconductor wafer processing apparatus according to the first embodiment. [ Fig. 12] A side view showing the laser focus of a laser emitter, the imaging focus of a high-resolution camera, and the imaging focus of a wide-angle camera in the singulating device according to the first embodiment. [ Fig. 13] A sectional view showing modified layers of a wafer after dicing by the laser irradiator in the dicing apparatus according to the first embodiment. [ Fig. 14] A plan view showing alignment marks provided on a plurality of semiconductor chips on the wafer in the dicing apparatus according to the first embodiment. [ Fig. 15] A side view showing a height adjusting device in the separating device according to the first embodiment. [ Fig. 16] A plan view showing the high-resolution camera, an altimeter, and the wide-angle camera in the singulating device according to the first embodiment. [ Fig. 17] A schematic view showing a state before a first alignment mark, a second alignment mark, and a third alignment mark are imaged by the high-resolution camera in the singulating device according to the first embodiment. [ Fig. 18] A schematic view showing a state in which the first alignment mark on the wafer has been moved by a chuck unit to align it with the position of the high-resolution camera, in the dicing apparatus according to the first embodiment. [ Fig. 19] A sectional view along the line XIX-XIX in Fig. 18 is a diagram illustrating a state in which the first height position of a portion of the wafer offset in a predetermined direction from the first alignment mark is measured by the altimeter in the dicing apparatus according to the first embodiment. [ Fig. 20] A sectional view along the line XIX-XIX in Fig. 18 for illustrating a state in which the first alignment mark is imaged by an imager whose imaging focus has been adjusted based on the first height position, in the separating device according to the first embodiment. [ Fig. 21] A schematic view showing a state in which the second alignment mark on the wafer has been moved by the chuck unit to align it with the position of the high-resolution camera, in the dicing apparatus according to the first embodiment. [ Fig. 22] A sectional view along the line XXII-XXII in Fig. 21 for illustrating a state in which the second height position of a portion of the wafer offset in the predetermined direction from the second alignment mark is measured by the altimeter, in the dicing apparatus according to the first embodiment. [ Fig. 23] A sectional view along the line XXII-XXII in Fig. 21 for illustrating a state in which the second alignment mark is imaged by the imager whose imaging focus has been adjusted based on the second height position, in the separating device according to the first embodiment. [ Fig. 24] A schematic view showing a state in which the third alignment mark on the wafer has been moved by the chuck unit to align it with the position of the high-resolution camera, in the dicing apparatus according to the first embodiment. [ Fig. 25] A schematic view showing the height plane of the wafer detected in the dicing apparatus according to the first embodiment. [ Fig. 26] A schematic view showing a state in which the first alignment mark on the wafer has been moved again by the chuck unit to align it with the position of the high-resolution camera, in the dicing apparatus according to the first embodiment. [ Fig. 27] A sectional view corresponding to the sectional view along the line XXII-XXII in Fig. 21, for illustrating a state in which a difference between the first height position and the second height position is within an allowable range, in the separating device according to the first embodiment. [ Fig. 28] A flowchart of the first half of an alignment information acquisition process of the semiconductor wafer processing apparatus according to the first embodiment. [ Fig. 29] A flowchart of the second half of the alignment information acquisition process of the semiconductor wafer processing apparatus according to the first embodiment. [ Fig. 30] A plan view showing a semiconductor wafer processing apparatus including a dicing device and a stretching device according to a second embodiment. [ Fig. 31] A side view showing the semiconductor wafer processing apparatus including the dicing device and the stretching device according to the second embodiment, as viewed from the Y2 direction side. [ Fig. 32] A side view showing the semiconductor wafer processing apparatus including the dicing device and the stretching device according to the second embodiment, as viewed from the X1 direction side. [ Fig. 33] A block diagram showing the control configuration of the semiconductor wafer processing apparatus according to the second embodiment. [ Fig. 34] A flowchart of the first half of a semiconductor chip manufacturing process of the semiconductor wafer processing apparatus according to the second embodiment. [ Fig. 35] A flowchart of the second half of the semiconductor chip manufacturing process of the semiconductor wafer processing apparatus according to the second embodiment. Operating modes for realizing the invention

[0027] Embodiments embodying the present invention will be described below based on the drawings. First embodiment

[0028] The configuration of a semiconductor wafer processing apparatus 100 according to a first embodiment of the present invention will now be described with reference to Fig. 1 to 29 described. Semiconductor wafer processing apparatus

[0029] As in Fig. 1, the semiconductor wafer processing apparatus 100 is an apparatus that processes a wafer W1 provided on a wafer ring structure W. The semiconductor wafer processing apparatus 100 forms a modified layer Wm (see Fig. 13) in the wafer W1 and divides the wafer W1 along the modified layer Wm to form a plurality of semiconductor chips Ch (see Fig. 14).

[0030] The wafer ring structure W will now be described with reference to Fig. 2 and Fig. 3. The wafer ring structure W includes the wafer W1, a foil member W2, and a ring-shaped member W3.

[0031] The wafer W1 is a circular thin plate made of a crystal of a semiconductor material used as a material for a semiconductor integrated circuit. Inside the wafer W1, the modified layer Wm is formed by modifying the interior along a dividing line by processing in the semiconductor wafer processing apparatus 100. That is, the wafer W1 is processed so that it can be divided along the dividing line. The film member W2 is an elastic adhesive tape. An adhesive layer is provided on the upper surface W21 of the film member W2. The wafer W1 is attached to the adhesive layer on the film member W2. The annular member W3 is an annular metal frame in a plan view. The annular member W3 is attached to the adhesive layer on the film member W2, thereby surrounding the wafer W1.

[0032] The semiconductor wafer processing apparatus 100 includes a dicing device 1 and a stretching device 2. Hereinafter, an up-down direction is defined as the Z direction, an upward direction is defined as the Z1 direction, and a downward direction is defined as the Z2 direction. In a horizontal direction perpendicular to the Z direction, a direction in which the dicing device 1 and the stretching device 2 are aligned is defined as the X direction, a direction from the dicing device 1 toward the stretching device 2 in the X direction is defined as the X1 direction, and a direction from the stretching device 2 toward the dicing device 1 in the X direction is defined as the X2 direction. A direction perpendicular to the X direction in the horizontal direction is defined as the Y direction, a direction in the Y direction is defined as the Y1 direction, and the other direction in the Y direction is defined as the Y2 direction. Separation device

[0033] As in Fig. 1, Fig. 4 and Fig. As shown in Figure 5, the dicing device 1 emits a laser with a wavelength that is transparent to the wafer W1 along the dividing line (street Ws) to form the modified layer Wm. The modified layer Wm refers to a crack, a void, or the like formed within the wafer W1 by the laser. A method for forming the modified layer Wm in the wafer W1 in this way is called dicing.

[0034] Specifically, the separating device 1 includes a base 11, a clamping table unit 12, a laser 13, and an imager 14. The clamping table unit 12 is an example of a “table unit” in the claims.

[0035] The base 11 is a base on which the clamping table unit 12 is installed. The base 11 has a rectangular shape in plan view. clamping table unit

[0036] The chuck table unit 12 includes a suction unit 12a, clamps 12b, a rotation mechanism 12c, and a table moving mechanism 12d. The suction unit 12a sucks the wafer ring structure W on the upper surface of the suction unit 12a on the Z1 direction side. The suction unit 12a is a table that includes a suction hole, a suction piping, etc., for sucking the lower surface of the annular member W3 of the wafer ring structure W on the Z2 direction side. The suction unit 12a is supported by the table moving mechanism 12d via the rotation mechanism 12c. The clamps 12b are provided at an upper end of the suction unit 12a. The clamps 12b hold the wafer ring structure W sucked by the suction unit 12a. The clamps 12b hold the annular member W3 of the wafer ring structure W sucked by the suction unit 12a from the Z1 direction side.In this way, the wafer ring structure W is held by the suction unit 12a and the clamps 12b.

[0037] The rotation mechanism 12c rotates the suction unit 12a in a circumferential direction about a rotation center axis C extending parallel to the Z direction. The rotation mechanism 12c is attached to an upper end of the table movement mechanism 12d. The table movement mechanism 12d moves the wafer ring structure W in the X and Y directions. The table movement mechanism 12d includes an X-direction movement mechanism 121 and a Y-direction movement mechanism 122. The X-direction movement mechanism 121 moves the rotation mechanism 12c in the X1 direction or the X2 direction. The X-direction movement mechanism 121 includes, for example, a linear conveyor module or a ball screw and a drive including a motor with an encoder. The Y-direction moving mechanism 122 moves the rotating mechanism 12c in the Y1 direction or the Y2 direction.The Y-direction movement mechanism 122 includes, for example, a linear conveyor module or a ball screw and a drive that includes a motor with an encoder. Laser

[0038] The laser 13 emits a laser beam La onto the wafer W1 of the wafer ring structure W held by the chuck unit 12. The laser 13 is arranged on the Z1 direction side of the chuck unit 12. The laser 13 includes a laser emitter 13a, a mounting member 13b, and a Z-direction movement mechanism 13c. The laser emitter 13a emits a pulsed laser beam. The mounting member 13b is a frame on which the laser 13 and the imager 14 are mounted. The Z-direction movement mechanism 13c moves the laser 13 in the Z1 direction or the Z2 direction. The Z-direction movement mechanism 13c includes, for example, a linear conveyor module or a ball screw and a drive including a motor with an encoder.The laser irradiator 13a may be a laser irradiator that oscillates a continuous wave laser beam other than a pulsed laser beam as the laser beam La, as long as a modified layer Wm can be formed by multiphoton absorption. The Z-direction moving mechanism 13c is an example of a "laser lifting mechanism" in the claims. Image provider

[0039] The imager 14 images the wafer W1 of the wafer ring structure W held by the chuck unit 12. The imager 14 is arranged on the Z1 direction side of the chuck unit 12. The imager 14 includes a high-resolution camera 14a, a wide-angle camera 14b, a Z-direction movement mechanism 14c, and a Z-direction movement mechanism 14d. The high-resolution camera 14a is an example of a "first camera" in the claims. The wide-angle camera 14b is an example of a "second camera" in the claims. The Z-direction movement mechanism 14c and the Z-direction movement mechanism 14d are examples of an "imager lifting mechanism" in the claims.

[0040] The high-resolution camera 14a and the wide-angle camera 14b are near-infrared imaging cameras. The high-resolution camera 14a has a narrower field of view than the wide-angle camera 14b. The high-resolution camera 14a has a higher resolution than the wide-angle camera 14b. The wide-angle camera 14b has a wider field of view than the high-resolution camera 14a. The wide-angle camera 14b has a lower resolution than the high-resolution camera 14a. The high-resolution camera 14a is arranged on the X1 direction side of the laser irradiator 13a. The wide-angle camera 14b is arranged on the X2 direction side of the laser irradiator 13a. Thus, the high-resolution camera 14a, the laser irradiator 13a, and the wide-angle camera 14b are arranged adjacent to each other in this order from the X1 direction side to the X2 direction side.

[0041] The Z-direction movement mechanism 14c moves the high-resolution camera 14a in the Z1 direction or the Z2 direction. The Z-direction movement mechanism 14c includes, for example, a linear conveyor module or a ball screw and a drive that includes a motor with an encoder. The Z-direction movement mechanism 14d moves the wide-angle camera 14b in the Z1 direction or the Z2 direction. The Z-direction movement mechanism 14d includes, for example, a linear conveyor module or a ball screw and a drive that includes a motor with an encoder. Stretching device

[0042] As in Fig. 1, Fig. 6 and Fig. As shown in Figure 7, the stretching device 2 divides the wafer W1 to form the plurality of semiconductor chips Ch (see Fig. 14). The stretching device 2 forms a sufficient gap between the plurality of semiconductor chips Ch. A modified layer Wm is formed in the wafer W1 by emitting a laser having a wavelength transparent to the wafer W1 along the dividing line (street Ws) in the dicing device 1. In the stretching device 2, the plurality of semiconductor chips Ch are formed by dividing the wafer W1 along the modified layer Wm formed in advance in the dicing device 1.

[0043] Therefore, in the stretching device 2, the wafer W1 is divided along the modified layer Wm by stretching the film member W2. Furthermore, in the stretching device 2, the gap between the plurality of semiconductor chips Ch formed by the division is widened by stretching the film member W2.

[0044] The stretching device 2 includes a base 201, a cassette unit 202, a lifting hand unit 203, a suction hand unit 204, a base 205, a cooling air supply 206, a cooling unit 207, a stretcher 208, a base 209, a stretch maintaining member 210, a heat shrinker 211, an ultraviolet lamp 212, a doctor blade unit 213, and a clamping unit 214. base

[0045] The base 201 is a base on which the cassette unit 202 and the lifting hand unit 203 are installed. The base 201 has a rectangular shape in plan view. Cassette unit

[0046] The cassette unit 202 can accommodate a plurality of wafer ring structures W. The cassette unit 202 includes wafer cassettes 202a, a Z-direction moving mechanism 202b, and pairs of placement sections 202c.

[0047] A plurality of (three) wafer cassettes 202a are arranged in the Z direction. Each of the wafer cassettes 202a has an accommodation space capable of accommodating a plurality of (five) wafer ring structures W. The wafer ring structure W is manually fed and placed into the wafer cassette 202a. The wafer cassette 202a can accommodate one to four wafer ring structures W or can accommodate six or more wafer ring structures W. Furthermore, one, two, or four or more wafer cassettes 202a can be arranged in the Z direction.

[0048] The Z-direction movement mechanism 202b moves the wafer cassettes 202a in the Z1 direction or the Z2 direction. The Z-direction movement mechanism 202b includes, for example, a linear conveyor module or a ball screw and a drive including a motor with an encoder. The Z-direction movement mechanism 202b also includes mounting tables 202d that support the wafer cassettes 202a from below. A plurality of (three) mounting tables 202d are arranged according to the positions of the plurality of wafer cassettes 202a.

[0049] A plurality of (five) pairs of placement sections 202c are arranged within the wafer cassette 202a. The annular member W3 of the wafer ring structure W is placed on the pair of placement sections 202c from the Z1 direction side. One of the pair of placement sections 202c protrudes in the X2 direction from the inner surface of the wafer cassette 202a on the X1 direction side. The other of the pair of placement sections 202c protrudes in the X1 direction from the inner surface of the wafer cassette 202a on the X2 direction side. Lifting hand unit

[0050] The lifting hand unit 203 can remove the wafer ring structure W from the cassette unit 202. Furthermore, the lifting hand unit 203 can insert the wafer ring structure W into the cassette unit 202.

[0051] Specifically, the lifting hand unit 203 includes a Y-direction movement mechanism 203a and a lifting hand 203b. The Y-direction movement mechanism 203a includes, for example, a linear conveyor module or a ball screw and a drive including a motor with an encoder. The lifting hand 203b supports the annular member W3 of the wafer ring structure W from the Z2 direction side. Suction hand unit

[0052] The suction hand unit 204 sucks the ring-shaped member W3 of the wafer ring structure W from the Z1 direction side.

[0053] Specifically, the suction hand unit 204 includes an X-direction movement mechanism 204a, a Z-direction movement mechanism 204b, and a suction hand 204c. The X-direction movement mechanism 204a moves the suction hand 204c in the X direction. The Z-direction movement mechanism 204b moves the suction hand 204c in the Z direction. Each of the X-direction movement mechanism 204a and the Z-direction movement mechanism 204b includes, for example, a linear conveyor module or a ball screw and a drive including a motor with an encoder. The suction hand 204c sucks and supports the annular member W3 of the wafer ring structure W from the Z1 direction side. The suction hand 204c supports the annular member W3 of the wafer ring structure W by generating a negative pressure. base

[0054] As in Fig. 7 and Fig. 8, the base 205 is a base on which the expander 208, the cooling unit 207, the ultraviolet lamp 212, and the doctor blade unit 213 are installed. The base 205 has a rectangular shape in plan view. Fig. 8, the clamping unit 214 arranged on the Z1 direction side of the cooling unit 207 is indicated by dotted lines. Cooling air supply

[0055] The cooling air supply 206 supplies cooling air to the film member W2 from the Z1 direction side when the film member W2 is stretched by the stretcher 208.

[0056] Specifically, the cooling air supply 206 includes a supply main body 206a, a cooling air supply port 206b, and a moving mechanism 206c. The cooling air supply port 206b allows cooling air supplied from a cooling air supply device to flow out therethrough. The cooling air supply port 206b is provided at one end of the supply main body 206a on the Z2 direction side. The cooling air supply port 206b is arranged in a central portion of the end of the supply main body 206a on the Z2 direction side. The moving mechanism 206c includes, for example, a linear conveyor module or a ball screw and a motor with an encoder.

[0057] The cooling air supply device is a device that generates cooling air. The cooling air supply device supplies cooled air, for example, by a heat pump. Such a cooling air supply device is installed on the base 205. The cooling air supply 206 and the cooling air supply device are connected to each other by a hose (not shown). Cooling unit

[0058] The cooling unit 207 cools the film member W2 from the Z2 direction side.

[0059] Specifically, the cooling unit 207 includes a cooling member 207a, which includes a heat sink 271 and a Peltier element 272, and a Z-direction movement mechanism 207b. The heat sink 271 is made of a member with a large heat capacity and high thermal conductivity. The heat sink 271 is made of a metal such as aluminum. The Peltier element 272 cools the heat sink 271. The heat sink 271 is not limited to aluminum and can be another member with a large heat capacity and high thermal conductivity. The Z-direction movement mechanism 207b is a cylinder.

[0060] The cooling unit 207 is movable in the Z1 direction or the Z2 direction by the Z-direction movement mechanism 207b. Thus, the cooling unit 207 is movable to a position contacting the film member W2 and a position spaced apart from the film member W2. Dehner

[0061] The stretcher 208 stretches the foil member W2 of the wafer ring structure W to divide the wafer W1 along the dividing line.

[0062] Specifically, the expander 208 includes an expansion ring 281. The expansion ring 281 expands the film member W2 by supporting the film member W2 from the Z2 direction side. The expansion ring 281 has a ring shape in plan view. The structure of the expansion ring 281 is described in detail below. base

[0063] The base 209 is a base material on which the cooling air supply 206, the expansion maintaining member 210 and the heat shrinker 211 are installed. Stretch maintenance limb

[0064] As in Fig. 7 and Fig. As shown in Fig. 8, the strain maintaining member 210 holds the film member W2 down from the Z1 direction side so that the film member W2 does not shrink near the wafer W1 due to heating by a heater ring 211a.

[0065] Specifically, the stretch maintaining member 210 includes a pressing ring 210a, a lid 210b, and an inlet 210c. The pressing ring 210a has a ring shape in plan view. The lid 210b is provided on the pressing ring 210a to cover an opening of the pressing ring 210a. The inlet 210c is an inlet ring with a ring shape in plan view. A plurality of inlet ports are formed in the lower surface of the inlet 210c on the Z2 direction side. The pressing ring 210a is moved in the Z direction by a Z-direction moving mechanism 210d. That is, the Z-direction moving mechanism 210d moves the pressing ring 210a to a position where the film member W2 is held down and a position away from the film member W2. The Z-direction motion mechanism 210d includes, for example, a linear conveyor module or a ball screw and a drive that includes a motor with an encoder. Heat shrinker

[0066] The heat shrinker 211 shrinks the film member W2 stretched by the stretcher 208 by heating it while maintaining the gap between the plurality of semiconductor chips Ch.

[0067] The heat shrinker 211 includes the heating ring 211a and a Z-direction movement mechanism 211b. The heating ring 211a has a ring shape in plan view. The heating ring 211a includes a wrapped heater that heats the film member W2. The Z-direction movement mechanism 211b moves the heating ring 211a in the Z direction. The Z-direction movement mechanism 211b includes, for example, a linear conveyor module or a ball screw and a drive that includes a motor with an encoder. Ultraviolet lamps

[0068] The ultraviolet emitter 212 emits ultraviolet rays Ut onto the film member W2 to reduce the adhesion strength of the adhesive layer of the film member W2. Specifically, the ultraviolet emitter 212 includes an ultraviolet illuminator. The ultraviolet emitter 212 is arranged at one end of a press 213a of the squeegee unit 213, described below, on the Z1 direction side. The ultraviolet emitter 212 emits ultraviolet rays Ut onto the film member W2 while moving together with the squeegee unit 213. Squeegee unit

[0069] The squeegee unit 213 further divides the wafer W1 along the modified layer Wm by locally pressing the wafer W1 from the Z2 direction side after the film member W2 is stretched. Specifically, the squeegee unit 213 includes the press 213a, a Z-direction moving mechanism 213b, an X-direction moving mechanism 213c, and a rotation mechanism 213d.

[0070] The press 213a generates bending stress in the wafer W1 to divide the wafer W1 along the modified layer Wm by being moved by the rotation mechanism 213d and the X-direction movement mechanism 213c while pressing the wafer W1 from the Z2 direction side over the film member W2. The press 213a presses the wafer W1 over the film member W2 by being raised to a raised position on the Z1 direction side by the Z-direction movement mechanism 213b. When the press 213a is lowered to a lowered position on the Z2 direction side by the Z-direction movement mechanism 213b, the wafer W1 is no longer pressed. The press 213a is a squeegee.

[0071] The press 213a is mounted on one end of the Z-direction movement mechanism 213b on the Z1 direction side. The Z-direction movement mechanism 213b moves the press 213a linearly in the Z1 direction or the Z2 direction. The Z-direction movement mechanism 213b is, for example, a cylinder. The Z-direction movement mechanism 213b is mounted on one end of the X-direction movement mechanism 213c on the Z1 direction side.

[0072] The X-direction movement mechanism 213c is mounted on one end of the rotary mechanism 213d on the Z1 direction side. The X-direction movement mechanism 213c moves the press 213a linearly in one direction. The X-direction movement mechanism 213c includes, for example, a linear feed module or a ball screw and a drive including a motor with an encoder.

[0073] In the squeegee unit 213, the press 213a is raised to the raised position by the Z-direction movement mechanism 213b. In the squeegee unit 213, the press 213a is moved in the Y direction by the X-direction movement mechanism 213c while locally pressing the wafer W1 from the Z2 direction side via the film member W2 so that the wafer W1 is divided. In the squeegee unit 213, the press 213a is lowered to the lowered position by the Z-direction movement mechanism 213b. In the squeegee unit 213, after the press 213a completes a movement in the Y direction, the press 213a is rotated 90 degrees by the rotation mechanism 213d.

[0074] In the squeegee unit 213, the press 213a is raised to the raised position by the Z-direction moving mechanism 213b. In the squeegee unit 213, after the press 213a is rotated 90 degrees, the press 213a is moved in the X direction by the X-direction moving mechanism 213c while locally pressing the wafer W1 from the Z2 direction side over the film member W2, so that the wafer W2 is divided. clamping unit

[0075] The clamping unit 214 holds the annular member W3 of the wafer ring structure W. Specifically, the clamping unit 214 includes a gripper 214a, a Z-direction movement mechanism 214b, and a Y-direction movement mechanism 214c. The gripper 214a supports the annular member W3 from the Z2 direction side and holds the annular member W3 from the Z1 direction side. Thus, the annular member W3 is held by the gripper 214a. The gripper 214a is attached to the Z-direction movement mechanism 214b.

[0076] The Z-direction movement mechanism 214b moves the clamping unit 214 in the Z direction. Specifically, the Z-direction movement mechanism 214b moves the gripper 214a in the Z1 direction or the Z2 direction. The Z-direction movement mechanism 214b includes, for example, a linear conveyor module or a ball screw and a drive that includes a motor with an encoder. The Z-direction movement mechanism 214b is attached to the Y-direction movement mechanism 214c. The Y-direction movement mechanism 214c moves the Z-direction movement mechanism 214b in the Y1 direction or the Y2 direction. The Y-direction movement mechanism 214c includes, for example, a linear conveyor module or a ball screw and a drive that includes a motor with an encoder. Control configuration of the semiconductor wafer processing device

[0077] As in Fig. As shown in Fig. 9, the semiconductor wafer processing apparatus 100 includes a first controller 101, a second controller 102, a third controller 103, a fourth controller 104, a fifth controller 105, a sixth controller 106, a seventh controller 107, an eighth controller 108, a stretch control computer 109, a handling control computer 110, a dicing control computer 111, and a memory 112. The dicing control computer 111 is an example of a "controller" in the claims.

[0078] The first controller 101 controls the squeegee unit 213. The first controller 101 includes, for example, a central processing unit (CPU) and a memory including a read-only memory (ROM) and a random access memory (RAM). The first controller 101 may include, for example, a hard disk drive (HDD) as memory, which retains stored information even after the power is turned off. The HDD may be provided jointly for the first controller 101, the second controller 102, the third controller 103, the fourth controller 104, the fifth controller 105, the sixth controller 106, the seventh controller 107, and the eighth controller 108.

[0079] The second controller 102 controls the cooling air supply 206 and the cooling unit 207. The second controller 102 includes, for example, a CPU and a memory including a ROM and a RAM. The third controller 103 controls the heat shrinker 211 and the ultraviolet lamp 212. The third controller 103 includes, for example, a CPU and a memory including a ROM and a RAM. The second controller 102 and the third controller 103 may include an HDD as storage, which retains stored information even after the power is turned off.

[0080] The fourth controller 104 controls the cassette unit 202 and the lifting hand unit 203. The fourth controller 104 includes, for example, a CPU and a memory including a ROM and a RAM. The fifth controller 105 controls the suction hand unit 204. The fifth controller 105 includes, for example, a CPU and a memory including a ROM and a RAM. The fourth controller 104 and the fifth controller 105 may include, for example, an HDD as storage, which retains stored information even after the power is turned off.

[0081] The sixth controller 106 controls the clamping table unit 12. The sixth controller 106 includes, for example, a CPU and a memory including a ROM and a RAM. The seventh controller 107 controls the laser 13. The seventh controller 107 includes, for example, a CPU and a memory including a ROM and a RAM. The eighth controller 108 controls the imager 14. The eighth controller 108 includes, for example, a CPU and a memory including a ROM and a RAM. The sixth controller 106, the seventh controller 107, and the eighth controller 108 may include, for example, an HDD as storage that retains stored information even after the power is turned off.

[0082] The stretch control computer 109 performs calculations regarding a process for stretching the film member W2 based on the processing results of the first controller 101, the second controller 102, and the third controller 103. The stretch control computer 109 includes, for example, a CPU and a memory including a ROM and a RAM.

[0083] The handling control computer 110 performs calculations regarding a process for moving the wafer ring structure W based on the processing results of the fourth controller 104 and the fifth controller 105. The handling control computer 110 includes, for example, a CPU and a memory including a ROM and a RAM.

[0084] The dicing control computer 111 performs calculations related to a process for dicing the wafer W1 based on the processing results of the sixth controller 106, the seventh controller 107, and the eighth controller 108. The dicing control computer 111 includes, for example, a CPU and a memory including a ROM and a RAM. The configuration of the dicing control computer 111 is described in detail below.

[0085] The memory 112 stores programs for operating the separating device 1 and the stretching device 2. The memory 112 includes, for example, a ROM, a RAM and an HDD. Semiconductor chip manufacturing process

[0086] The overall operation of the semiconductor wafer processing apparatus 100 will be described below with reference to Fig. 10 and Fig. 11 described.

[0087] In step S1, the wafer ring structure W is removed from the cassette unit 202. That is, after the wafer ring structure W stored in the cassette unit 202 is supported by the lifting hand 203b, the lifting hand 203b is moved in the Y1 direction by the Y-direction moving mechanism 203a such that the wafer ring structure W is removed from the cassette unit 202. In step S2, the wafer ring structure W is transferred to the chuck table unit 12 of the singulation device 1 by the suction hand 204c. That is, the wafer ring structure W removed from the cassette unit 202 is moved in the X2 direction by the X-direction moving mechanism 204a while being sucked by the suction hand 204c. The wafer ring structure W that has been moved in the X2 direction is transferred from the suction hand 204c to the chuck table unit 12 and then held by the chuck table unit 12.

[0088] In step S3, a modified layer Wm is formed in the wafer W1 by the laser 13. In step S4, the wafer ring structure W including the wafer W1 in which the modified layer Wm has been formed is transferred to the clamping unit 214 by the suction hand 204c. In step S5, the film member W2 is cooled by the cooling air supply 206 and the cooling unit 207. That is, the wafer ring structure W held by the clamping unit 214 is moved (lowered) in the Z2 direction by the Z-direction moving mechanism 214b to contact the cooling unit 207, and the cooling air supply 206 supplies cooling air from the Z1 direction side to cool the film member W2.

[0089] In step S6, the wafer ring structure W is moved to the expander 208 by the clamping unit 214. That is, the wafer ring structure W with the cooled film member W2 is moved in the Y1 direction by the Y-direction moving mechanism 214c while being held by the clamping unit 214. In step S7, the film member W2 is expanded by the expander 208. That is, the wafer ring structure W is moved in the Z2 direction by the Z-direction moving mechanism 214b while being held by the clamping unit 214. Then, the film member W2 contacts the expansion ring 281 and is expanded by being pulled by the expansion ring 281. Thus, the wafer W1 is divided along the dividing line (modified layer Wm).

[0090] In step S8, the stretched film member W2 is held down from the Z1 direction side by the stretch maintaining member 210. That is, the pressing ring 210a is moved (lowered) in the Z2 direction by the Z-direction moving mechanism 210d until it contacts the film member W2. Then, the process proceeds from a point A in Fig. 10 over a point A in Fig. 11 proceed to step S9.

[0091] As in Fig. As shown in Figure 11, in step S9, after the film member W2 is held down by the stretch maintaining member 210, the film member W2 is irradiated with ultraviolet rays Ut by the ultraviolet lamp 212 while the wafer W1 is pressed by the squeegee unit 213. Thus, the wafer W1 is further divided by the squeegee unit 213. In addition, the adhesive strength of the film member W2 is reduced by the ultraviolet rays Ut emitted by the ultraviolet lamp 212.

[0092] In step S10, while the heat shrinker 211 heats and shrinks the film member W2, the clamp unit 214 is lifted. At this time, the inlet 210a admits air near the heated film member W2. In step S11, the wafer ring structure W is transferred from the clamp unit 214 to the suction hand 204c. That is, the wafer ring structure W is moved in the Y2 direction by the Y-direction moving mechanism 214c while being held by the clamp unit 214. Then, the wafer ring structure W is sucked by the suction hand 204c after the holding by the clamp unit 214 on the Z1 direction side of the cooling unit 207 is released.

[0093] In step S12, the wafer ring structure W is transferred by the suction hand 204c to the lifting hand 203b. In step S13, the wafer ring structure W is stored in the cassette unit 202. That is, the wafer ring structure W carried by the lifting hand 203b is moved in the Y1 direction by the Y-direction moving mechanism 203a to be stored in the cassette unit 202. Thus, the process performed on a wafer ring structure W is completed. Then, the process returns from a point B in Fig. 11 via a point B in Fig. 10 back to step S1. Detailed configuration of the clamping table unit, the laser and the imager

[0094] The detailed configuration of the clamping table unit 12, the laser 13 and the image generator 14 of the separating device 1 will now be described with reference to Fig. 12 to 16 described.

[0095] The chuck table unit 12 moves the wafer W1 containing the plurality of semiconductor chips Ch (see Fig. 14), in at least one of the X direction (first direction in the horizontal direction) or the Y direction (second direction perpendicular to the first direction), and rotates the wafer W1 while holding the wafer W1. Specifically, the chuck table unit 12 includes the suction unit 12a, the clamps 12b, the rotation mechanism 12c, and the table moving mechanism 12d. The table moving mechanism 12d includes the X-direction moving mechanism 121 and the Y-direction moving mechanism 122. Laser

[0096] As in Fig. 12 and Fig. As shown in Fig. 13, the laser 13 emits the laser beam La onto the wafer W1, which moves or rotates while being held by the chuck unit 12, to dice the wafer W1 into the plurality of semiconductor chips Ch. In the dicing performed by the dicing apparatus 1 according to the first embodiment, the wafer W1 is not diced into the plurality of semiconductor chips Ch with the laser beam La, but the modified layer Wm is formed in the wafer W1 with the laser beam La, and then the wafer W1 is divided along the modified layer Wm.

[0097] Specifically, the laser 13 includes the laser emitter 13a, the mounting member 13b, and the Z-direction moving mechanism 13c. The Z-direction moving mechanism 13c is a mechanism for moving (raising and lowering) the laser emitter 13a in the Z1 direction and the Z2 direction to adjust the height position of the laser focus Fa of the laser beam La. At the laser focus Fa, the wafer W1 is burned by the heat of the condensed laser beam La, so that the modified layer Wm is formed by modifying the interior along the dividing line. Image provider

[0098] As in Fig. 14 and Fig. As shown in Figure 15, the imager 14 images a plurality of alignment marks Ar of the plurality of semiconductor chips Ch provided on the wafer W1. The alignment marks Ar are provided on the side (back side) of the wafer W1 closer to the film member W2.

[0099] The imager 14 includes the high-resolution camera 14a, the wide-angle camera 14b, the Z-direction movement mechanism 14c, and the Z-direction movement mechanism 14d. The Z-direction movement mechanism 14c is a mechanism for moving (raising and lowering) the high-resolution camera 14a in the up-down direction to adjust the imaging focus Fc1. The Z-direction movement mechanism 14d is a mechanism for moving (raising and lowering) the wide-angle camera 14b in the up-down direction to adjust the imaging focus Fc2. The high-resolution camera 14a and the wide-angle camera 14b are near-infrared imaging cameras.

[0100] Wafer W1 is a silicon wafer made of silicon, and thus, it absorbs light with wavelengths other than infrared light. Thus, light other than infrared light reflected from the alignment marks Ar provided on the side of wafer W1 closer to film member W1 is absorbed by wafer W1. Therefore, near-infrared imaging cameras such as high-resolution camera 14a and wide-angle camera 14b are used to image near-infrared light reflected from the alignment marks Ar provided on the side of wafer W1 closer to film member W2 and transmitted through wafer W1.Even if the alignment marks Ar are provided on the side of the wafer W1 opposite the film member W2, it is possible to image infrared light reflected from the alignment marks Ar, and thus, it is possible to image the alignment marks Ar by the high-resolution camera 14a and the wide-angle camera 14b. Thus, regardless of whether the alignment marks Ar are provided on the side of the wafer W1 closer to the film member W2 or on the side of the wafer W1 opposite the film member W2, the alignment marks Ar can be imaged by the high-resolution camera 14a and the wide-angle camera 14b. altimeter

[0101] As in Fig. 15 and Fig. 16, the dicing device 1 includes an altimeter 15. The altimeter 15 measures the height position of a surface of the wafer W1. The altimeter 15 emits a laser beam Lm focused toward a focal point, detects the diameter of the laser beam Lm on the wafer W1, and measures the height position of the surface of the wafer W1 based on the detected diameter of the laser beam Lm. The height position of the surface of the wafer W1 refers to the position in the Z1 direction from the upper end surface of the base 11 with the upper end surface of the base 11 as a reference.

[0102] Specifically, the altimeter 15 includes a laser emitter 15a and an imager 15b. Unlike the laser emitter 15a, the laser emitter 15a emits the laser beam Lm, which does not burn the wafer W1. The laser beam Lm is visible point light. The imager 15b includes a camera capable of imaging visible light. The imager 15b images the laser beam Lm onto the wafer W1 by imaging the wafer W1. Thus, the diameter of the laser beam Lm on the wafer W1 is detected. Therefore, the diameter of the laser beam Lm, which is focused toward the focal point, becomes smaller toward the focal point, and thus the height position of the surface of the wafer W1 is measured.

[0103] The laser emitter 13a, the laser emitter 15a and the imager 15b are arranged coaxially in the Z direction.

[0104] The high-resolution camera 14a, the wide-angle camera 14b and the altimeter 15 are linearly arranged in an Ad direction (X direction) in which a first alignment mark Ar1 (see Fig. 14) and a second alignment mark Ar2 (see Fig. 14) of the plurality of alignment marks Ar are aligned in plan view. Specifically, the optical center of the high-resolution camera 14a, the optical center of the wide-angle camera 14b, the optical center of the laser emitter 15a, and the optical center of the imager 15b are aligned in a straight line Lc in the Ad direction (X direction) in plan view. The Ad direction is an example of a "predetermined direction" in the claims. Detailed configuration of the singulation control or regulation computer

[0105] In the dicing device 1, position adjustment of the wafer W1 in the horizontal direction (in plan view) (planar alignment of the wafer W1) is performed to accurately emit the laser beam La from the laser emitter 13a along the street Ws onto the wafer W1. Furthermore, the modified layer Wm is formed in the wafer W1 while adjusting the laser focus Fa of the laser beam La emitted from the laser emitter 13a (height alignment of the laser focus Fa) to form the modified layer Wm at a precise position in the wafer W1.

[0106] Therefore, as in Fig. 17, in the singulation device 1, the rotation angle of the wafer W1 by the rotation mechanism 12c, the movement amount of the wafer W1 by the X-direction movement mechanism 121, and the movement amount of the wafer W1 by the Y-direction movement mechanism 122 in the chuck table unit 12 are detected to align actual positions of two alignment marks Ar of the plurality of alignment marks Ar, which are imaged by the high-resolution camera 14a, with predetermined positions of the two alignment marks Ar based on differences between the actual positions and the predetermined positions. Furthermore, a height plane Wp (see Fig. 25) of the wafer W1 is determined based on the height positions of three points on the surface of the wafer W1 detected by the altimeter 15.

[0107] On the wafer W1 in the plan view, the position of each of the plurality of alignment marks Ar in the X direction and the position of each of the plurality of alignment marks Ar in the Y direction are predetermined. Fig. 17, for the sake of simplicity, only the first alignment mark Ar1, the second alignment mark Ar2, and a third alignment mark Ar3 are shown among the plurality of actual alignment marks Ar provided on the wafer W1. Also shown are a first alignment mark Ad1 at a predetermined position corresponding to the first alignment mark Ar1, a second alignment mark Ad2 at a predetermined position corresponding to the second alignment mark Ar2, and a third alignment mark Ar3 at a predetermined position corresponding to the third alignment mark Ar3. Fig. 17 shows the high-resolution camera 14a and the altimeter 15 in a simplified manner.

[0108] As in Fig. As shown in Figs. 18 to 23, the dicing control computer 111 according to the first embodiment controls the high-resolution camera 14a to image the plurality of alignment marks Ar, while simultaneously controlling the altimeter 15 to measure the height positions of the wafer W1.

[0109] Specifically, the singulation control computer 111 carries out a control or regulation in order to determine, based on a difference Hd (see Fig. 22) between the first height position Hw1 (see Fig. 22) and the second height position Hw2 (see Fig. 22) to detect whether the first alignment mark Ar1 and the second alignment mark Ar2 have been imaged or not when a straight section Ld passing through the first height position Hw1 and the second height position Hw2 of the wafer W1 (see Fig. 22) is inclined outside a permissible range with respect to the horizontal direction.

[0110] The first height position Hw1 is the height position of a portion of the wafer W1 offset in the Ad direction from a first arrangement position at which the first alignment mark Ar1 is arranged, and the second height position Hw2 is the second height position Hw2 of a portion of the wafer W1 offset in the Ad direction from a second arrangement position at which the second alignment mark Ar2 is arranged.

[0111] First, as in Fig. 18 and Fig. 19, the singulation control computer 111 performs a control to detect the first height position Hw1 of the wafer W1 using the altimeter 15. Furthermore, as shown in Fig. 18 and Fig. As shown in Figure 20, the dicing control computer 111 controls the Z-direction moving mechanism 14c to adjust the imaging focus Fc1 of the high-resolution camera 14a, which is located at a position where the first alignment mark Ar1 is imaged at the first arrangement position, based on the first height position Hw1. At this time, the imaging focus Fc1 is set based on the first height position Hw1 of the portion of the wafer W1 that is offset in the Ad direction from the first arrangement position, not the first arrangement position.That is, the imaging focus Fc1 is not suitable as the imaging focus Fc1 for imaging the first alignment mark Ar1 unless the height position of the wafer W1 at the first arrangement position and the first height position Hw1 of the portion of the wafer W1 offset in the Ad direction from the first arrangement position are substantially equal to each other (within an allowable range (within a tolerance)).

[0112] Thus, as in Fig. 18 to 20, the dicing control computer 111 performs control to image the first alignment mark Ar1 after adjusting, using the Z-direction moving mechanism 14c, the imaging focus Fc1 of the high-resolution camera 14a arranged at the position where the first alignment mark Ar1 is imaged at the first arrangement position based on the first height position Hw1 of the wafer W1.

[0113] As in Fig. 21 and Fig. 22, the singulation control computer 111 performs control to detect the second height position Hw2 of the wafer W1 using the altimeter 15. As shown in Fig. 22 and Fig. As shown in Figure 23, the dicing control computer 111 controls the Z-direction moving mechanism 14c to adjust the imaging focus Fc1 of the high-resolution camera 14a, which is located at a position where the second alignment mark Ar2 is imaged at the second arrangement position, based on the second height position Hw2. At this time, the imaging focus Fc1 is set based on the second height position Hw2 of the portion of the wafer W1 that is offset in the Ad direction from the second arrangement position, not the second arrangement position.That is, the imaging focus Fc1 is not suitable as the imaging focus Fc1 for imaging the second alignment mark Ar2 unless the height position of the wafer W1 at the second arrangement position and the second height position Hw2 of the portion of the wafer W1 offset in the Ad direction from the second arrangement position are substantially equal to each other (within an allowable range (within a tolerance)).

[0114] Thus, as in Fig. 21 to 23, the dicing control computer 111 performs control to image the second alignment mark Ar2 after adjusting, using the Z-direction moving mechanism 14c, the imaging focus Fc1 of the high-resolution camera 14a arranged at the position where the second alignment mark Ar2 is imaged at the second arrangement position based on the second height position Hw2 of the wafer W1.

[0115] As in Fig. 24 and Fig. 25, the dicing control computer 111 performs control to determine the height plane Wp of the wafer W1 based on the first height position Hw1, the second height position Hw2, and a third height position Hw3 measured by the altimeter 15 at the arrangement position of the third alignment mark Ar3, which is not on the straight line Lc extending in the Ad direction.

[0116] If the difference Hd between the first height position Hw1 and the second height position Hw2 is outside an allowable range, the singulation control computer 111 performs control to detect the third alignment mark Ar3 imaged by the high-resolution camera 14a with the imaging focus Fc1 set based on the detected height plane Wp. As shown in Fig. 25 and Fig. 26, the dicing control computer 111 performs control to enable the position adjustment of the wafer W1 in the horizontal direction based on the first alignment mark Ar1 (or the second alignment mark Ar2) imaged by the high-resolution camera 14a with the imaging focus Fc1 adjusted based on the detected height plane Wp.

[0117] Thus, the singulation control computer 111 performs control to detect the positions of two alignment marks, the first alignment mark Ar1 (or the second alignment mark Ar2) and the third alignment mark Ar3, which are imaged when the imaging focus Fc1 of the high-resolution camera 14a is adjusted, among the plurality of alignment marks Ar by moving the high-resolution camera 14a in the up-down direction using the Z-direction moving mechanism 14c to adjust the imaging focus Fc1 to adjust the position of the wafer W1 in the horizontal direction.

[0118] As in Fig. 24 and Fig. 27, when the difference between the first height position Hw1 and the second height position Hw2 is within the allowable range, the singulation control computer 111 controls the altimeter 15 to measure the third height position Hw3 without imaging the third alignment mark Ar3 at the arrangement position of the third alignment mark Ar3 using the high-resolution camera 14a.

[0119] The singulation control computer 111 performs control to detect the positions of two alignment marks Ar, the first alignment mark Ar1 and the second alignment mark Ar2, which are imaged when the imaging focus Fc1 of the high-resolution camera 14a is adjusted, among the plurality of alignment marks Ar, to adjust the position of the wafer W1 in the horizontal direction.

[0120] After the above-described process, the dicing control computer 111 controls the rotation mechanism 12c, the X-direction movement mechanism 121, and the Y-direction movement mechanism 122 of the chuck unit 12 to perform planar alignment of the wafer W1. Accordingly, the planar alignment of the wafer W1 is performed, and thus it becomes possible to accurately emit the laser beam La from the laser emitter 13a along the line Ws.

[0121] The dicing control computer 111 performs control to emit the laser beam La onto the wafer W1, adjusting the laser focus Fa, while simultaneously adjusting the height position of the laser emitter 13a based on the height plane Wp of the wafer W1, which is determined based on the height positions of three points on the wafer W1 measured by the altimeter 15, using the Z-direction moving mechanism 13c. That is, the dicing control computer 111 performs control to emit the laser beam La, adjusting the position of the laser focus Fa in the Z direction based on the height plane Wp of the wafer W1 based on the height positions measured by the altimeter 15 when the laser beam La is emitted from the laser emitter 13a.Accordingly, a height alignment of the laser focus Fa is performed and thus the modified layer Wm can be formed at a precise position in the wafer W1.

[0122] Such planar alignment of the wafer W1 and height alignment of the laser focus Fa are performed at a predetermined time set by a user, such as before the modified layer Wm is formed by the laser beam La in the wafer W1 of the first wafer ring structure W in the semiconductor wafer processing apparatus 100.

[0123] In the above-described process by the singulation control computer 111, an example was shown in which the plurality of alignment marks Ar are imaged using the high-resolution camera 14a, but the positions of the alignment marks Ar to be imaged may be determined using the wide-angle camera 14b, and then the alignment marks Ar to be imaged may be imaged using the high-resolution camera 14a. Alignment information acquisition process

[0124] An alignment information acquisition process using the dicing control computer 111 of the semiconductor wafer processing apparatus 100 will be described below with reference to Fig. 28 and Fig. 29 described.

[0125] In step S101, it is determined whether or not alignment is to be performed. That is, it is determined whether or not a predetermined case specified by the user exists, such as whether or not the modified layer Wm is to be formed by the laser beam La in the wafer W1 of the wafer ring structure W in the semiconductor wafer processing apparatus 100, so that it is determined whether or not planar alignment of the wafer W1 and height alignment of the laser focus Fa are to be performed. If the alignments are to be performed, it is necessary to acquire alignment information required for planar alignment of the wafer W1 and height alignment of the laser focus Fa, and thus the process proceeds to step S102. If the alignments are not to be performed, the process proceeds via a point E in Fig. 28 and a point E in Fig. 29 and the alignment information acquisition process is completed.

[0126] In step S102, the positions of the predetermined first alignment mark Ad1, second alignment mark Ad2, and third alignment mark Ad3 are detected. In step S103, the high-resolution camera 14a is positioned in alignment with the position of the first alignment mark Ad1 by moving the wafer W1 using the chuck unit 12. In step S104, the first height position Hw1 of the wafer W1 is detected by the altimeter 15. Step S104 is a step in which the altimeter 15 measures the height position of the surface of the wafer W1.

[0127] In step S105, the imaging focus Fc1 of the high-resolution camera 14a is adjusted based on the first height position Hw1, and then the actual first alignment mark Ar1 is imaged on the wafer W1. Step S105 is a step in which the imager 14 images the plurality of alignment marks Ar of the plurality of semiconductor chips Ch provided on the wafer W1.

[0128] In step S106, the high-resolution camera 14a is positioned in alignment with the position of the second alignment mark Ad2 by moving the wafer W1 using the chuck unit 12. In step S107, the second height position Hw2 of the wafer W1 is detected by the altimeter 15. Step S107 is a step in which the altimeter 15 measures the height position of the surface of the wafer W1.

[0129] In step S108, the imaging focus Fc1 of the high-resolution camera 14a is adjusted based on the second height position Hw2, and then the actual second alignment mark Ar2 is imaged on the wafer W1. Step S108 is a step in which the imager 14 images the plurality of alignment marks Ar of the plurality of semiconductor chips Ch provided on the wafer W1.

[0130] In step S109, it is determined whether the difference Hd between the first height position Hw1 and the second height position Hw2 is within the allowable range. If the difference Hd between the first height position Hw1 and the second height position Hw2 is within the allowable range, the process proceeds to a point D in Fig. 28 and a point D in Fig. 29 to step S115. If the difference Hd between the first height position Hw1 and the second height position Hw2 is outside the allowable range, the process proceeds via a point C in Fig. 28 and a point C in Fig. 29 proceeds to step S110. First, a case where the difference Hd between the first height position Hw1 and the second height position Hw2 is outside the allowable range will be described.

[0131] In step S110, the high-resolution camera 14a is positioned in alignment with the position of the third alignment mark Ad3 by moving the wafer W1 using the chuck unit 12. In step S111, the third height position Hw3 of the wafer W1 is detected by the altimeter 15, and then the height plane Wp of the wafer W1 is detected. Step S110 is a step in which the altimeter 15 measures the height position of the surface of the wafer W1.

[0132] In step S112, the imaging focus Fc1 of the high-resolution camera 14a is adjusted based on the height plane Wp, and then the actual third alignment mark Ar3 is imaged on the wafer W1. Step S110 is a step in which the imager 14 images the plurality of alignment marks Ar of the plurality of semiconductor chips Ch provided on the wafer W1.

[0133] In step S113, the high-resolution camera 14a is positioned in alignment with the position of the first alignment mark Ad1 by moving the wafer W1 using the chuck unit 12. In step S114, the imaging focus Fc1 of the high-resolution camera 14a is adjusted based on the height plane Wp, and then the actual first alignment mark Ar1 is imaged on the wafer W1. After step S114, the alignment information acquisition process is completed. Next, a case where the difference Hd between the first height position Hw1 and the second height position Hw2 is within the allowable range will be described.

[0134] In step S115, the high-resolution camera 14a is positioned in alignment with the position of the third alignment mark Ad3 by moving the wafer W1 using the chuck unit 12. In step S116, the third height position Hw3 of the wafer W1 is detected by the altimeter 15, and then the height plane Wp of the wafer W1 is detected. After step S116, the alignment information acquisition process is completed.

[0135] Then, after the alignment information acquisition process in a semiconductor chip manufacturing method (the semiconductor chip manufacturing process described above), which is a manufacturing method for manufacturing the semiconductor chip Ch, is completed, the dicing control computer 111 performs a step of forming the modified layer Wm, whose position in the horizontal direction has been adjusted based on the plurality of alignment marks Ar imaged by the imager 14, in the wafer W1 by the laser beam La emitted from the laser irradiator 13a, and adjusting the laser focus Fa of the laser beam La based on the height position of the surface of the wafer W1 measured by the altimeter 15. Further, the strain control computer 111 performs a step of forming the modified layer Wm, whose position in the horizontal direction has been adjusted based on the plurality of alignment marks Ar imaged by the imager 14, in the wafer W1 by the laser beam La emitted from the laser irradiator 13a.-control computer 109 performs a step of stretching the film member W2 to which the wafer W1 has been attached to divide the wafer W1 into the plurality of semiconductor chips Ch along the modified layer Wm.

[0136] The semiconductor chip Ch manufactured by such a semiconductor chip manufacturing method is manufactured by the dicing device 1, which includes the imager 14 for imaging the plurality of alignment marks Ar of the plurality of semiconductor chips Ch provided on the wafer W1, and the altimeter 15 for measuring the height position of the surface of the wafer W1. Advantageous effects of the first embodiment

[0137] According to the first embodiment, the following advantageous effects are achieved.

[0138] According to the first embodiment, as described above, the dicing device 1 includes the imager 14 for imaging the plurality of alignment marks Ar of the plurality of semiconductor chips Ch on the wafer W1, and the altimeter 15 for measuring the height position of the surface of the wafer W1. Accordingly, based on the alignment marks Ar imaged by the imager 14, the wafer W1 is moved and / or rotated by the chuck unit 12 such that the position of the wafer W1 in the horizontal direction can be adjusted. Furthermore, the height position of the surface of the wafer W1 can be detected based on the height position measured by the altimeter 15, and thus the focus of the laser beam La emitted from the laser emitter 13a on the wafer W1 can be adjusted based on the height position of the surface of the wafer W1.Accordingly, the position of the wafer W1 in the horizontal direction can be adjusted and the focus of the laser beam La emitted from the laser emitter 13a on the wafer W1 can be adjusted.

[0139] According to the first embodiment, as described above, the dicing device 1 includes the dicing control computer 111 configured or programmed to control the imager 14 to image the plurality of alignment marks Ar, while simultaneously controlling the altimeter 15 to measure the height positions of the wafer W1.Accordingly, the height positions of the surface of the wafer W1 can be detected at positions where the alignment marks Ar are imaged by the imager 14, and thus, compared with a case where the alignment marks Ar are imaged by the imager 14 at positions different from positions where the height positions of the surface of the wafer W1 are detected, an increase in the number of times the wafer W1 is moved by the chuck unit 12 in the first direction and the second direction in the horizontal direction can be reduced or prevented.

[0140] According to the first embodiment, as described above, the imager 14 includes the Z-direction moving mechanism 14c for moving the high-resolution camera 14a in the up-down direction to adjust the imaging focus Fc1. The singulation control computer 111 is configured or programmed to perform control to detect the positions of the two alignment marks Ar, which are imaged with the imaging focus Fc1 of the high-resolution camera 14a adjusted, among the plurality of alignment marks Ar by moving the high-resolution camera 14a in the up-down direction using the Z-direction moving mechanism 14c to adjust the imaging focus Fc1 to adjust the position of the wafer W1 in the horizontal direction.Accordingly, the two actual alignment marks Ar on the wafer W1 can be clearly imaged by the high-resolution camera 14a, and thus the two alignment marks Ar can be accurately identified compared to other configurations. Accordingly, the position of the wafer W1 in the horizontal direction can be adjusted based on the two accurate alignment marks Ar, and thus the position of the wafer W1 in the horizontal direction can be accurately adjusted.

[0141] According to the first embodiment, as described above, the high-resolution camera 14a and the altimeter 15 are linearly aligned in the Ad direction (predetermined direction) in which the first alignment mark Ar1 and the second alignment mark Ar2 among the plurality of alignment marks Ar are aligned. Accordingly, at a position where the first alignment mark Ar1 is imaged by the high-resolution camera 14a, the altimeter 15 can measure the height position offset in the Ad direction (predetermined direction). Furthermore, at a position where the second alignment mark Ar2 is imaged by the high-resolution camera 14a, the altimeter 15 can measure the height position offset in the Ad direction (predetermined direction). Thus, the inclination of the straight section Ld passing through the two height positions on the wafer W1 with respect to the horizontal direction can be detected.When the two height positions are measured, the first alignment mark Ar1 and the second alignment mark Ar2 are imaged in parallel such that information can be acquired to determine whether the first alignment mark Ar1 and the second alignment mark Ar2 have been imaged by the high-resolution camera 14a or not when the wafer W1 is excessively tilted and it is difficult to adjust the imaging focus Fc1 of the high-resolution camera 14a.

[0142] According to the first embodiment, as described above, the dicing control computer 111 is configured or programmed to perform control to detect whether the first alignment mark Ar1 and the second alignment mark Ar2 have been imaged or not, based on the difference Hd between the first height position Hw1 of the portion of the wafer W1 offset in the Ad direction (predetermined direction) from the first arrangement position at which the first alignment mark Ar1 is arranged and the second height position Hw2 of the portion of the wafer W1 offset in the Ad direction (predetermined direction) from the second arrangement position at which the second alignment mark Ar2 is arranged, when the straight portion Ld passing through the first height position Hw1 and the second height position Hw2 of the wafer W1 is inclined outside the allowable range with respect to the horizontal direction.Accordingly, it is possible to identify whether the first alignment mark Ar1 and the second alignment mark Ar2 have been imaged by the high-resolution camera 14a based on the difference Hd between the first height position Hw1 and the second height position Hw2 when the straight section Ld passing through the two height positions on the wafer W1 is excessively tilted. Therefore, it is possible to identify whether the first alignment mark Ar1 and the second alignment mark Ar2 have been imaged by the high-resolution camera 14a when the wafer W1 is excessively tilted to such an extent that it is difficult to adjust the imaging focus Fc1 of the imager 14.

[0143] According to the first embodiment, as described above, the dicing control computer 111 is configured or programmed to perform control to image the first alignment mark Ar1 after adjusting, using the Z-direction moving mechanism 14c, the imaging focus Fc1 of the high-resolution camera 14a located at the position where the first alignment mark Ar1 is imaged at the first arrangement position based on the first height position Hw1 of the wafer W1, and to image the second alignment mark Ar2 after adjusting, using the Z-direction moving mechanism 14c, the imaging focus Fc1 of the high-resolution camera 14a located at the position where the second alignment mark Ar2 is imaged at the second arrangement position based on the second height position Hw2 of the wafer W1.Accordingly, the imaging focus Fc1 of the high-resolution camera 14a arranged at the position where the first alignment mark Ar1 is imaged at the first arrangement position is set based on the first height position Hw1 of the portion of the wafer W1 offset in the Ad direction (predetermined direction) from the first arrangement position where the first alignment mark Ar1 is arranged, and thus it is difficult to image the first alignment mark Ar1 with the imaging focus Fc1 set unless the surface of the wafer W1 is approximately horizontal.Furthermore, the imaging focus Fc1 of the high-resolution camera 14a arranged at the position where the second alignment mark Ar2 is imaged at the second arrangement position is adjusted based on the second height position Hw2 of the portion of the wafer W1 offset in the Ad direction (predetermined direction) from the second arrangement position where the second alignment mark Ar2 is arranged, and thus it is difficult to image the second alignment mark Ar2 with the imaging focus Fc1 adjusted unless the surface of the wafer W1 is approximately horizontal.Thus, when the difference Hd between the first height position Hw1 and the second height position Hw2 is within the allowable range and the surface of the wafer W1 is approximately horizontal, the first alignment mark Ar1 and the second alignment mark Ar2 are imaged with the imaging focus Fc1 adjusted, and thus the position of the wafer W1 in the horizontal direction can be adjusted based on the first alignment mark Ar1 and the second alignment mark Ar2. Accordingly, it is possible to prevent an imaging process for imaging alignment marks Ar other than the first alignment mark Ar1 and the second alignment mark Ar2 from being performed, and thus an increase in processing time in the dicing device 1 can be reduced or prevented.

[0144] According to the first embodiment, as described above, the dicing control computer 111 is configured or programmed to perform control to determine the height plane Wp of the wafer W1 based on the first height position Hw1, the second height position Hw2, and the third height position Hw3 measured by the altimeter 15 at the arrangement position of the third alignment mark Ar3 that is not on the straight line Lc extending in the Ad direction (predetermined direction). Accordingly, the imaging focus Fc1 of the high-resolution camera 14a for imaging the plurality of alignment marks Ar on the wafer W1 can be accurately adjusted based on the height plane Wp of the wafer W1, and thus the high-resolution camera 14a can clearly image the alignment marks Ar.Furthermore, the laser focus Fa of the laser beam La emitted from the laser emitter 13a can be adjusted to a position according to the height plane Wp of the wafer W1 using the height plane Wp of the wafer W1, and thus an appropriate position on the wafer W1 can be processed by the laser beam.

[0145] According to the first embodiment, as described above, the dicing control computer 111 is configured or programmed, when the difference Hd between the first height position Hw1 and the second height position Hw2 is out of the allowable range, to perform control to enable the position adjustment of the wafer W1 in the horizontal direction based on the third alignment mark Ar3 imaged by the high-resolution camera 14a with the imaging focus Fc1 set based on the detected height plane Wp, and the first alignment mark Ar1 or the second alignment mark Ar2 imaged by the high-resolution camera 14a with the imaging focus Fc1 set based on the detected height plane Wp.Accordingly, the third alignment mark Ar3 and the first alignment mark Ar1 or the second alignment mark Ar2 can be imaged by the high-resolution camera 14a with the imaging focus Fc1 precisely adjusted based on the height plane Wp of the wafer W1, and thus the third alignment mark Ar3 and the first alignment mark Ar1 or the second alignment mark Ar2 can be clearly imaged. Accordingly, the position of the third alignment mark Ar3 and the position of the first alignment mark Ar1 or the position of the second alignment mark Ar2 can be reliably detected, and thus the chuck unit 12 moves and / or rotates the wafer W1 in such a way that the position adjustment of the wafer W1 in the horizontal direction is enabled.

[0146] According to the first embodiment, as described above, the dicing control computer 111 is configured or programmed to control the altimeter 15 to measure the third height position Hw3 without imaging the third alignment mark Ar3 at the arrangement position of the third alignment mark Ar3 using the high-resolution camera 14a when the difference Hd between the first height position Hw1 and the second height position Hw2 is within the allowable range. Accordingly, even if the third alignment mark Ar3 is not imaged, the position of the wafer W1 in the horizontal direction can be adjusted based on the first alignment mark Ar1 and the second alignment mark Ar2, and thus the processing time at the dicing device 1 can be reduced by the time required to image the third alignment mark Ar3.

[0147] According to the first embodiment, as described above, the dicing device 1 includes the Z-direction moving mechanism 13c for moving the laser emitter 13a in the up-down direction to adjust the laser focus Fa of the laser beam La. The dicing control computer 111 is configured or programmed to perform control to emit the laser beam La onto the wafer W1 while adjusting the laser focus Fa, while simultaneously adjusting, using the Z-direction moving mechanism 13c, the height position of the laser emitter 13a based on the height plane Wp of the wafer W1, which is determined based on the height positions of three points on the wafer W1 measured by the altimeter 15.Accordingly, the height position of the laser emitter 13a is adjusted by the Z-direction moving mechanism 13c based on the height plane Wp of the wafer W1, so that the laser focus Fa of the laser beam La emitted from the laser emitter 13a can be adjusted to a suitable position according to the height plane Wp of the wafer W1. Thus, compared to a case where the chuck unit 12, which includes the mechanism for moving and rotating the wafer W1 in the first direction and the second direction in the horizontal direction, is moved in the up-down direction, an increase in the driving force of a drive source required for the lifting mechanism can be reduced or prevented. Accordingly, a relatively small drive source can be used for the lifting mechanism, and thus an increase in the size of the dicing device 1 can be reduced or prevented.

[0148] According to the first embodiment, as described above, the imager 14 includes an infrared camera. Accordingly, it is possible to image infrared light reflected by the alignment marks Ar provided on the wafer W1 and transmitted through the wafer W1, and thus, even if the alignment marks Ar are provided on the side of the wafer W1 closer to the film member W2, it is possible to image the alignment marks Ar provided on the wafer W1. Furthermore, even if the alignment marks Ar are provided on the side of the wafer W1 opposite the film member W2, it is possible to image the infrared light reflected by the alignment marks Ar, and thus, the alignment marks Ar provided on the wafer W1 can be imaged.Accordingly, the alignment marks Ar can be imaged both when the alignment marks Ar are provided on the side of the wafer W1 closer to the film member W2 and when the alignment marks Ar are provided on the side of the wafer W1 opposite the film member W2.

[0149] According to the first embodiment, as described above, the imager 14 includes the wide-angle camera 14b and the high-resolution camera 14a. The wide-angle camera 14b has a wider angle of view than the high-resolution camera 14a. The high-resolution camera 14a has a higher resolution than the wide-angle camera 14b. Accordingly, when a plurality of wafers W1 of the same type are processed in the dicing device 1, the accuracy of positioning the wafer W1 in the horizontal direction was not confirmed when processing the first wafer W1. Thus, the wide-angle camera 14b capable of imaging the wafer W1 with a wider angle of view is used when imaging the first alignment mark Ar1 and the second alignment mark Ar2, so that the first alignment mark Ar1 and the second alignment mark Ar2 can be imaged more reliably.Furthermore, when a plurality of wafers W1 of the same type are processed in the dicing device 1, the first alignment mark Ar1 and the second alignment mark Ar2 are imaged a plurality of times by the wide-angle camera 14b until the precise positions of the first alignment mark Ar1 and the second alignment mark Ar2 can be detected, and then the first alignment mark Ar1 and the second alignment mark Ar2 can be imaged by the high-resolution camera 14a. Therefore, after it becomes possible to reliably image the first alignment mark Ar1 and the second alignment mark Ar2, the first alignment mark Ar1 and the second alignment mark Ar2 can be clearly imaged.

[0150] According to the first embodiment, as described above, the manufacturing method for the semiconductor chip Ch includes a step of imaging, by the imager 14, the plurality of alignment marks Ar of the plurality of semiconductor chips Ch on the wafer W1. Further, the manufacturing method for the semiconductor chip Ch includes a step of measuring, by the altimeter 15, the height position of the surface of the wafer W1. Moreover, the manufacturing method for the semiconductor chip Ch includes a step of emitting the laser beam La onto the wafer W1 from the laser emitter 13a operable to emit the laser beam La to dice the wafer W1 into the plurality of semiconductor chips Ch. Accordingly, the position of the wafer W1 in the horizontal direction can be adjusted based on the alignment marks Ar imaged by the imager 14.Furthermore, the height position of the surface of the wafer W1 can be detected based on the height position measured by the altimeter 15, and thus the laser focus Fa of the laser beam La emitted from the laser emitter 13a on the wafer W1 can be adjusted based on the height position of the surface of the wafer W1. Accordingly, it is possible to achieve the semiconductor chip manufacturing method that enables the position of the wafer W1 to be adjusted in the horizontal direction and the laser focus Fa of the laser beam La emitted from the laser emitter 13a on the wafer W1.

[0151] According to the first embodiment, as described above, the semiconductor chip Ch is manufactured by the dicing device 1, which includes the imager 14 for imaging the plurality of alignment marks Ar of the plurality of semiconductor chips Ch on the wafer W1, and the altimeter 15 for measuring the height position of the surface of the wafer W1. Accordingly, based on the alignment marks Ar imaged by the imager 14, the wafer W1 is moved and / or rotated by the chuck unit 12 such that the position of the wafer W1 in the horizontal direction can be adjusted. Furthermore, the height position of the surface of the wafer W1 can be detected based on the height position measured by the altimeter 15, and thus the laser focus Fa of the laser beam La emitted from the laser emitter 13a on the wafer W1 can be adjusted based on the height position of the surface of the wafer W1.Accordingly, it is possible to obtain the semiconductor chip Ch manufactured by the dicing device 1 capable of adjusting the position of the wafer W1 in the horizontal direction and adjusting the laser focus Fa of the laser beam La emitted from the laser emitter 13a on the wafer W1. Second embodiment

[0152] The configuration of a semiconductor wafer processing apparatus 300 according to a second embodiment will now be described with reference to Fig. 30 to 35. In the second embodiment, unlike the first embodiment, the doctor unit 3213 is arranged outside an expansion ring 3281. In the second embodiment, a detailed description of the same or analogous configurations as or to those of the first embodiment is omitted. Semiconductor wafer processing apparatus

[0153] As in Fig. 30 and Fig. 31, the semiconductor wafer processing apparatus 300 is an apparatus that processes a wafer W1 provided on a wafer ring structure W.

[0154] The semiconductor wafer processing apparatus 300 includes a dicing device 1 and a stretching device 302. An up-down direction is defined as the Z direction, an upward direction is defined as the Z1 direction, and a downward direction is defined as the Z2 direction. In a horizontal direction perpendicular to the Z direction, a direction in which the dicing device 1 and the stretching device 302 are aligned is defined as the X direction, a direction from the dicing device 1 toward the stretching device 302 in the X direction is defined as the X1 direction, and a direction from the stretching device 302 toward the dicing device 1 in the X direction is defined as the X2 direction. A direction perpendicular to the X direction in the horizontal direction is defined as the Y direction, a direction in the Y direction is defined as the Y1 direction, and the other direction in the Y direction is defined as the Y2 direction. Separation device

[0155] The dicing device 1 emits a laser with a wavelength transparent to the wafer W1 along a dividing line (street Ws) to form a modified layer Wm.

[0156] Specifically, the separation device 1 includes a base 11, a clamping table unit 12, a laser 13 and an image generator 14. Stretching device

[0157] As in Fig. 31 and Fig. 32, the stretching device 302 divides the wafer W1 to form a plurality of semiconductor chips Ch.

[0158] The stretching device 302 includes a base 201, a cassette unit 202, a lifting hand unit 203, a suction hand unit 204, a base 205, a cooling air supply 206, a cooling unit 207, a stretcher 3208, a base 209, a stretch maintaining member 210, a heat shrinker 211, an ultraviolet lamp 212, a doctor blade unit 3213, and a clamping unit 214. Dehner

[0159] The stretcher 3208 stretches a foil member W2 of the wafer ring structure W to divide the wafer W1 along the dividing line.

[0160] Specifically, the expander 3208 includes the expansion ring 3281 and a Z-direction movement mechanism 3282.

[0161] The expansion ring 3281 expands the film member W2 by supporting the film member W2 from the Z2 direction side. The expansion ring 3281 has a ring shape in a plan view. The Z-direction movement mechanism 3282 moves the expansion ring 3281 in the Z1 direction or the Z2 direction. The Z-direction movement mechanism 3282 includes, for example, a linear conveyor module or a ball screw and a drive including a motor with an encoder. The Z-direction movement mechanism 3282 is attached to the base 205. Squeegee unit

[0162] The squeegee unit 3213 further divides the wafer W1 along the modified layer Wm by pressing the wafer W1 from the Z2 direction side after the film member W2 is stretched. Specifically, the squeegee unit 3213 includes a press 3213a, an X-direction moving mechanism 3213b, a Z-direction moving mechanism 3213c, and a rotating mechanism 3213d.

[0163] The press 3213a generates bending stress in the wafer W1 to divide the wafer W1 along the modified layer Wm by being moved by the rotating mechanism 3213d and the X-direction moving mechanism 3213b, while pressing the wafer W1 from the Z2 direction side over the film member W2 after being moved in the Z1 direction by the Z-direction moving mechanism 3213c. The press 3213a is a squeegee. The press 3213a is attached to one end of the rotating mechanism 3213d on the Z1 direction side. The Z-direction moving mechanism 3213c moves the rotating mechanism 3213d in the Z1 direction or the Z2 direction. The Z-direction moving mechanism 3213c includes, for example, a cylinder. The Z-direction moving mechanism 3213c is attached to one end of the X-direction moving mechanism 3213b on the Z1 direction side.The X-direction movement mechanism 3213b includes, for example, a linear conveyor module or a ball screw and a drive including a motor with an encoder. The X-direction movement mechanism 3213b is mounted on one end of the base 205 on the Z1 direction side.

[0164] In the squeegee unit 3213, the press 3213a divides the wafer W1 by moving it in the Y direction by the X-direction moving mechanism 3213b, while pressing the wafer W1 from the Z2 direction side over the film member W2 after being moved in the Z1 direction by the Z-direction moving mechanism 3213c. Furthermore, in the squeegee unit 3213, after the press 3213a completes a movement in the Y direction, the press 3213a is rotated 90 degrees by the rotation mechanism 3213d. Moreover, in the doctor unit 3213, the press 3213a divides the wafer W1 by being moved in the X direction by the X direction moving mechanism 3213b while pressing the wafer W1 from the Z2 direction side over the film member W2 after being rotated by 90 degrees. Control configuration of the semiconductor wafer processing device

[0165] As in Fig. 33, the semiconductor wafer processing apparatus 300 includes a first controller 101, a second controller 102, a third controller 103, a fourth controller 3104, a fifth controller 3105, a sixth controller 3106, a seventh controller 3107, an eighth controller 3108, a ninth controller 3109, a stretch control computer 3110, a handling control computer 3111, a dicing control computer 3112, and a memory 3113. The first controller 101, the second controller 102, the third controller 103, the fifth controller 3105, the sixth controller 3106, the seventh controller 3107, the eighth controller 3108, the ninth controller 3109, the stretch control or regulation computer 3110, the handling control or regulation computer 3111, the singulation control or regulation computer 3112.The first controller 102, the second controller 102, the third controller 103, the fourth controller 104, the fifth controller 105, the sixth controller 106, the seventh controller 107, the eighth controller 108, the stretch control computer 109, the handling control computer 110, the singulation control computer 111, and the memory 112 each have the same configurations as those of the first controller 102, the second controller 102, the third controller 103, the fourth controller 104, the fifth controller 105, the sixth controller 106, the seventh controller 107, the eighth controller 108, the stretch control computer 109, the handling control computer 110, the singulation control computer 111, and the memory 112 according to the first embodiment, and thus, a description thereof is omitted.

[0166] The fourth controller 3104 controls or regulates the expander 3208. The fourth controller 3104 includes, for example, a CPU and a memory that includes a ROM and a RAM. The fourth controller 3104 can include, for example, an HDD as storage, which retains stored information even after the power is turned off. Semiconductor chip manufacturing process

[0167] The overall operation of the semiconductor wafer processing apparatus 300 will be described below with reference to Fig. 34 and Fig. 35 described.

[0168] Process operations in step S1 to step S6, step S8, and step S11 are respectively the same as the process operations in step S1 to step S6, step S8, and step S11 in the semiconductor chip manufacturing process according to the first embodiment, and thus a description thereof is omitted.

[0169] In step S307, the film member W2 is stretched by the stretcher 3208. That is, the stretch ring 3281 is moved in the Z1 direction by the Z-direction moving mechanism 3282. The wafer ring structure W is moved in the Z2 direction by a Z-direction moving mechanism 214b while being held by the clamp unit 214. Then, the film member W2 is stretched by contacting the stretch ring 3281 and being pulled by the stretch ring 3281. Thus, the wafer W1 is divided along the dividing line (modified layer Wm).

[0170] As in Fig.35, in step S309, while the heat shrinker 211 heats and shrinks the film member W2 and the ultraviolet irradiator 212 irradiates the film member W2 with ultraviolet rays Ut, the clamp unit 214 is lifted. At this time, the inlet 210c admits air near the heated film member W2. In step S310, the wafer ring structure W is moved by the clamp unit 214 to the squeegee unit 3213. That is, the wafer ring structure W is moved in the Y2 direction by a Y-direction moving mechanism 214c while being held by the clamp unit 214.

[0171] In step S311, after the wafer ring structure W is moved to the squeegee unit 3213, the wafer W1 is pressed by the squeegee unit 3213. Thus, the wafer W1 is further divided by the squeegee unit 3213. Detailed configuration of the singulation control or regulation computer

[0172] The detailed configuration of the singulation control computer 3112 is the same as the detailed configuration of the singulation control computer 111 according to the first embodiment, and thus, a description thereof is omitted. The other configurations of the second embodiment are similar to those of the first embodiment, and thus, a description thereof is omitted. Advantageous effects of the second embodiment

[0173] According to the second embodiment, the following advantageous effects are achieved.

[0174] According to the second embodiment, similar to the first embodiment, the dicing device 1 includes the imager 14 for imaging a plurality of alignment marks Ar of the plurality of semiconductor chips Ch provided on the wafer W1, and an altimeter 15 for measuring the height position of a surface of the wafer W1. Accordingly, the position of the wafer W1 in the horizontal direction can be adjusted, and the focus of a laser beam La emitted from a laser emitter 13a on the wafer W1 can be adjusted. The other advantageous effects of the second embodiment are similar to those of the first embodiment, and thus, a description thereof is omitted. Modified examples

[0175] The embodiments disclosed herein are to be considered in all respects as illustrative and not restrictive. The scope of the present invention is not represented by the above description of the embodiments, but by the scope of the claims, and all modifications (modified examples) within the meaning and scope equivalent to the scope of the claims are also included.

[0176] For example, although the example in which the imager 14 and the altimeter 15 are linearly aligned in the Ad direction (predetermined direction) in which the first alignment mark Ar1 and the second alignment mark Ar2 among the plurality of alignment marks Ar are aligned was illustrated in each of the above-mentioned first and second embodiments, the present invention is not limited thereto. In the present invention, the imager and the altimeter may not be linearly aligned in the predetermined direction.

[0177] Although the example in which the high-resolution camera 14a and the wide-angle camera 14b (imagers) are near-infrared imaging cameras was illustrated in each of the above-mentioned first and second embodiments, the present invention is not limited thereto. In the present invention, the imager may be a type of camera other than a near-infrared imaging camera.

[0178] Although the example in which the imager 14 includes the high-resolution camera 14a (second camera) and the wide-angle camera 14b (first camera) was illustrated in each of the above-mentioned first and second embodiments, the present invention is not limited thereto. In the present invention, the imager may include either the second high-resolution camera or the first wide-angle camera.

[0179] Although the example in which the high-resolution camera 14a and the wide-angle camera 14b as near-infrared imaging cameras image the alignment marks Ar provided on the side (back side) of the wafer W1 closer to the film member W2 was illustrated in each of the above-mentioned first and second embodiments, the present invention is not limited thereto. In the present invention, when the alignment marks are provided on the side (front side) of the wafer opposite the film member, the alignment marks can be imaged by a visible light camera.

[0180] Although the control process of the singulation control computer 111 (3112: controller) is described in each of the above-mentioned first and second embodiments using a flowchart described in a manner controlled by a sequence in which processes are performed in order along a process flow for ease of illustration, the present invention is not limited thereto. In the present invention, the control process of the controller may be performed in an event-driven manner in which processes are performed based on events. In this case, the control process may be performed entirely in an event-driven manner or in a combination of an event-driven manner and a sequence-driven manner. List of reference symbols 1 separation device 12 Clamping table unit (table unit) 13a Laser emitter 13c Z-direction movement mechanism (laser lifting mechanism) 14 imagers 14a high-resolution camera (second camera) 14b Wide-angle camera (first camera) 14c Z-direction movement mechanism (imager lifting mechanism) 14d Z-direction movement mechanism (imager lifting mechanism) 15 altimeters 111, 3112 Separation control or regulation computer (controller) Ar alignment mark Ar1 first alignment mark Ar2 second alignment mark Ar3 third alignment mark Ch semiconductor chip Fa laser focus Fc1 image focus Fc2 image focus Hw1 first height position Hw2 second height position Hw3 third height position The laser beam Lc straight line Ld straight section W1 wafer Wp altitude level QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] JP 2019-016731 ​​[0003, 0007] JP 2019-016731 ​​[0004, 0006]

Claims

[1] Dicing or separating device, comprising: a table unit for moving a wafer including a plurality of semiconductor chips in at least one of a first direction in a horizontal direction or a second direction in the horizontal direction perpendicular to the first direction and rotating the wafer while holding the wafer; a laser irradiator for emitting a laser beam onto the wafer, which is moved or rotated while being held by the stage unit to dice the wafer into the plurality of semiconductor chips; an imager for imaging a plurality of alignment marks of the plurality of semiconductor chips on the wafer; and an altimeter to measure a height position of a surface or area of ​​the wafer. [2] Separation device according to claim 1, further comprising: a controller configured or programmed to control the imager to image the plurality of alignment marks while simultaneously controlling the altimeter to measure height positions of the wafer. [3] Separating device according to claim 2, wherein the imager includes an imager lifting mechanism for moving the imager in an up-down direction to adjust an imaging focus of the imager; and the controller is configured or programmed to perform control to detect positions of two alignment marks, which are imaged when the imaging focus of the imager is adjusted, among the plurality of alignment marks by moving the imager in the up-down direction using the imager lifting mechanism to adjust the imaging focus to adjust a position of the wafer in the horizontal direction. [4] The singulating device according to claim 3, wherein the imager and the altimeter are linearly aligned in a predetermined direction in which a first alignment mark and a second alignment mark among the plurality of alignment marks are aligned. [5] The dicing device according to claim 4, wherein the controller is configured or programmed to perform control to detect whether or not the first alignment mark and the second alignment mark have been imaged based on a difference between a first height position of a portion of the wafer offset in the predetermined direction from a first arrangement position at which the first alignment mark is arranged and a second height position of a portion of the wafer offset in the predetermined direction from a second arrangement position at which the second alignment mark is arranged, when a straight portion passing through the first height position and the second height position of the wafer is inclined outside an allowable range with respect to the horizontal direction. [6] The singulating device according to claim 5, wherein the controller is configured or programmed to perform control to image the first alignment mark after adjusting the imaging focus of the imager at a position where the first alignment mark is imaged at the first arrangement position based on the first height position of the wafer using the imager lifting mechanism, and to image the second alignment mark after adjusting the imaging focus of the imager at a position where the second alignment mark is imaged at the second arrangement position based on the second height position of the wafer using the imager lifting mechanism. [7] The dicing device according to claim 6, wherein the controller is configured or programmed to perform control to determine a height level of the wafer based on the first height position, the second height position, and a third height position measured by the altimeter at an arrangement position of a third alignment mark that is not on a straight line extending in the predetermined direction. [8] The singulation device according to claim 7, wherein the controller is configured or programmed, when the difference between the first height position and the second height position is outside an allowable range, to perform control to enable position adjustment of the wafer in the horizontal direction based on the third alignment mark imaged by the imager with the imaging focus set based on a determined height plane and the first alignment mark or the second alignment mark imaged by the imager with the imaging focus set based on the determined height plane. [9] The singulating device according to claim 7, wherein the controller is configured or programmed to control the altimeter to measure the third height position without imaging the third alignment mark at the arrangement position of the third alignment mark using the imager when the difference between the first height position and the second height position is within an allowable range. [10] Separation device according to claim 7, further comprising: a laser lifting mechanism for moving the laser emitter in the up-down direction to adjust a laser focus of the laser beam; wherein the controller is configured or programmed to perform control to emit the laser beam onto the wafer, adjusting the laser focus, while simultaneously adjusting a height position of the laser emitter based on the height plane of the wafer using the laser lifting mechanism, which is determined based on height positions of three points on the wafer measured by the altimeter. [11] Separation device according to claim 1, wherein the imager includes an infrared camera. [12] Separating device according to claim 4, wherein the imager includes a first camera and a second camera; the first camera has a wider angle of view than the second camera; and the second camera has a higher resolution than the first camera. [13] A semiconductor chip manufacturing method comprising: imaging, by an imager, a plurality of alignment marks of a plurality of semiconductor chips on a wafer; Measuring, by an altimeter, a height position of a surface or area of ​​the wafer; and Emitting a laser beam onto the wafer from a laser emitter operable to emit the laser beam to singulate the wafer into the plurality of semiconductor chips. [14] A semiconductor chip produced by a dicing device, the dicing device comprising: a table unit for moving a wafer including a plurality of semiconductor chips in at least one of a first direction in a horizontal direction or a second direction in the horizontal direction perpendicular to the first direction and rotating the wafer while holding the wafer; a laser irradiator for emitting a laser beam onto the wafer, which is moved or rotated while being held by the stage unit to dice the wafer into the plurality of semiconductor chips; an imager for imaging a plurality of alignment marks of the plurality of semiconductor chips on the wafer; and an altimeter to measure a height position of a surface or area of ​​the wafer.

Images