Cooling structure for semiconductor device

Abstract

A cooling structure may include: a semiconductor device comprising a base material and a sealing resin, a cooler, and a bonding material that bonds the cooler and the base material. Viewed in a first direction, the bonding material may extend outward from the sealing resin. The bonding material may have a first surface and a second surface that face each other oppositely in the first direction. The first surface may be in contact with the base material. The second surface may be in contact with the cooler. An area of ​​the second surface may be larger than an area of ​​the first surface.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a cooling structure for a semiconductor device. STATE OF THE ART

[0002] Patent Document 1 discloses an example of a semiconductor device provided with a cooler. The cooler includes a case having a hollow portion and a radiator. The case has an opening leading to the hollow portion. The radiator is attached to the case to block the opening. A part of the radiator is housed in the hollow portion. The semiconductor device is bonded to the part of the radiator protruding from the hollow portion using a bonding material. When a refrigerant (such as cooling water) flows into the hollow portion, the refrigerant comes into contact with the radiator. This allows the semiconductor device to be cooled via the radiator.

[0003] In the configuration of the semiconductor device equipped with the cooler disclosed in Patent Document 1, it may be difficult to visually inspect the condition of the bonding material for bonding the radiator and the semiconductor device. A defect in the bonding condition risks hindering heat conduction from the semiconductor device to the radiator. Therefore, it is desirable to be able to visually inspect the bonding condition between the radiator and the semiconductor device. STATE OF THE ARTPatent document

[0004] Patent document 1: WO2017 / 094370 SUMMARY OF THE INVENTION Problem to be solved by the invention

[0005] An object of the present disclosure is to provide a cooling structure for a semiconductor device that is improved compared to conventional devices. Specifically, in view of the above-described circumstances, one of the objects of the present disclosure is to provide a cooling structure for a semiconductor device that allows the bonding state of the semiconductor device to be easily checked with a cooler while improving the cooling performance of the semiconductor device. Means to solve the problem

[0006] One aspect of the present disclosure provides a cooling structure for a semiconductor device, including: a semiconductor device including a base material, a conductive layer bonded to the base material, a semiconductor element located on an opposite side to the base material in a first direction with respect to the conductive layer and bonded to the conductive layer, and a sealing resin covering the conductive layer and the semiconductor element; a cooler; and a bonding material bonding the cooler and the base material. Viewed in the first direction, the bonding material extends outward from the sealing resin. The bonding material has a first surface and a second surface oppositely facing each other in the first direction. The first surface is in contact with the base material. The second surface is in contact with the cooler.An area of the second surface is larger than an area of the first surface. Advantages of the invention

[0007] According to the above configuration, it becomes possible to easily check the bonding state of the semiconductor device with respect to the cooler and at the same time improve the cooling efficiency of the semiconductor device.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view of a semiconductor device according to a first embodiment of the present disclosure. Fig. 2 is a plan view of the Fig. 1 shown cooling structure for a semiconductor device. Fig. 3 is a right side view of the Fig. 1 shown cooling structure for a semiconductor device. Fig. 4 is a cross-sectional view along a line IV-IV of Fig. 2. Fig. 5 is a cross-sectional view taken along a line VV of Fig. 2. Fig. 6 is a partially enlarged view of Fig. 4. Fig. 7 is a partially enlarged view of Fig. 5. Fig. 8 is a plan view of a semiconductor device connected to the Fig. 1 shown cooling structure for a semiconductor device. Fig. 9 is a plan view showing Fig. 8, with the sealing resin shown as transparent. Fig. 10 is an enlarged partial view of Fig. 9. Fig. 11 is a plan view corresponding to Fig. 8, wherein a first conductive member is shown transparently and the sealing resin and a second conductive member are omitted. Fig. 12 is a right side view of the Fig. 8 shown semiconductor device. Fig. 13 is a view of the Fig. 8 shown semiconductor device from below. Fig. 14 is a cross-sectional view taken along a line XIV-XIV of Fig. 9. Fig. 15 is a cross-sectional view taken along a line XV-XV of Fig. 9. Fig. 16 is an enlarged partial view of a first element and its surrounding area, as in Fig. 15 shown. Fig. 17 is an enlarged partial view of a second element and its surrounding area, as in Fig. 15 shown. Fig. 18 is a cross-sectional view taken along a line XVIII-XVIII of Fig. 9. Fig. 19 is a cross-sectional view taken along a line XIX-XIX of Fig. 9. Fig. 20 is a plan view of a cooling structure for a semiconductor device according to a second embodiment of the present disclosure. Fig. 21 is a cross-sectional view along line XXI-XXI of Fig. 20. Fig. 22 is a cross-sectional view taken along a line XXII-XXII of Fig. 20. MODE FOR CARRYING OUT THE INVENTION

[0009] Hereinafter, preferred embodiments for implementing the present disclosure will be described based on the accompanying drawings. First embodiment:

[0010] Based on Fig. 1 to 19, a cooling structure (hereinafter referred to as "cooling structure A10") for a semiconductor device according to a first embodiment of the present disclosure will be described. The cooling structure A10 is provided with a semiconductor device B, a bonding material 70, and a cooler 80.

[0011] In the description of the cooling structure A10, for convenience, a normal direction of a first front surface 121A of a first conductive layer 121 of the semiconductor device B to be described later is referred to as a "first direction z." A direction orthogonal to the first direction z is referred to as a "second direction x." A direction orthogonal to the first direction z and the second direction y is referred to as a "third direction x."

[0012] First, based on Fig. 1 and Fig. 8 to 19, the semiconductor device B provided with the cooling structure A10 is described. The semiconductor device B may include a base material 11, a first conductive layer 121, a second conductive layer 122, a first input terminal 13, an output terminal 14, a second input terminal 15, a first signal terminal 161, a second signal terminal 162, a plurality of semiconductor elements 21, a first conductive member 31, a second conductive member 32, and a sealing resin 50. Furthermore, the semiconductor device B may include a third signal terminal 171, a fourth signal terminal 172, a pair of fifth signal terminals 181, a pair of sixth signal terminals 182, a seventh signal terminal 19, a pair of thermistors 22, and a pair of control wirings 60. Here, in Fig. 9 and Fig. 10 the sealing resin 50 is shown transparent for easier understanding. In Fig. 9, the transparent sealing resin 50 is drawn by an imaginary line (a double-dotted line). In Fig. 11, for better understanding, the first conductive component 31 is shown transparently and the second conductive component 32 and the sealing resin 50 are omitted. In Fig. 11, the transparent first conductive component 31 is drawn by an imaginary line. Furthermore, in Fig. 9 a line XV-XV drawn by a single dotted line.

[0013] The semiconductor device B may be configured to convert a DC power supply voltage applied to the first input terminal 13 and the second input terminal 15 into AC power by means of a plurality of semiconductor elements 21. The converted AC power may be input from the output terminal 14 to the power supply target, such as a motor.

[0014] As in Fig. 15 to 17, the base material 11 may be positioned opposite the plurality of semiconductor elements 21 with the first conductive layer 121 and the second conductive layer 122 therebetween in the first direction z. The base material 11 may support the first conductive layer 121 and the second conductive layer 122. In the semiconductor device B, the base material 11 may be constructed of (include) a DBC (Direct Bonded) substrate. As shown in Fig. As shown in Figures 15 to 17, the base material 11 may include an insulating layer 111, a pair of metal layers 112, and a radiating layer 113. The base material 11 may be covered with the sealing resin 50, except for a part of the radiating layer 113.

[0015] As in Fig. As shown in Figures 15 to 17, the insulating layer 111 may include a portion interposed in the first direction z between the metal layer 112 and the radiating layer 113. The insulating layer 111 may be made of a material with a relatively high thermal conductivity. For example, the insulating layer 111 may be a ceramic containing sintered aluminum nitride (AlN). The insulating layer 111 may be composed of an insulating resin film or even of a ceramic. The thickness of the insulating layer 111 may be thinner than the thickness of the first conductive layer 121 and the second conductive layer 122.

[0016] As in Fig. 15 to 17, the pair of metal layers 112 may be positioned in the first direction z between the insulating layer 111 and the first conductive layer 121 or the second conductive layer 122. The composition of the pair of metal layers 112 may include copper (Cu). As shown in Fig. 11, each of the pair of metal layers 112 may be surrounded by a peripheral end of the insulating layer 111, viewed in the first direction z.

[0017] As in Fig. 15 to 17, the radiating layer 113 may be positioned in the first direction z opposite the metal layer 112 with the insulating layer 111 therebetween. As shown in Fig. As shown in Figure 13, the radiating layer 113 may be exposed from the sealing resin 50. The composition of the radiating layer 113 may include copper. The thickness of the radiating layer 113 may be thicker than the thickness of the insulating layer 111. Viewed in the first z-direction, the radiating layer 113 may be surrounded by a peripheral end of the insulating layer 111.

[0018] As in Fig. 15 to 17, the first conductive layer 121 and the second conductive layer 122 may be bonded to the base material 11. The compositions of the first conductive layer 121 and the second conductive layer 122 may include copper. The first conductive layer 121 and the second conductive layer 122 may be separated from each other in the second direction x. As shown in Fig. 14 and Fig. 15, the first conductive layer 121 may have a first front surface 121A facing in the first direction z. The first front surface 121A may be opposite the plurality of semiconductor elements 21. As shown in Fig. 16, the plurality of semiconductor elements 21 may be bonded to a metal layer 112 of the pair of metal layers 112, including the first conductive layer 121 and a bonding layer 123. The bonding layer 123 may be, for example, a solder material including silver (Ag) in its composition. As shown in Fig. 14 and Fig. 15, the second conductive layer 122 may have a second front surface 122A facing in the first direction z. The second front surface 122A may face the same side as the first front surface 121A in the first direction z. As shown in Fig. As shown in Figure 17, the second conductive layer 122 may be bonded to the other metal layer 112 of the pair of metal layers 112, including the bonding layer 123. A dimension in the first direction z of the first conductive layer 121 and the second conductive layer 122 may each be larger than a dimension in the first direction z of the base material 11.

[0019] As in Fig. 11 and Fig. As shown in Figure 15, each of the plurality of semiconductor elements 21 may be mounted on the first conductive layer 121 and the second conductive layer 122. The plurality of semiconductor elements 21 may be, for example, MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors). In addition, the plurality of semiconductor elements 21 may be switching elements such as IGBTs (Insulated Gate Bipolar Transistors) and diodes, or the like. In the description of the semiconductor device B, the semiconductor element 21 may be an n-channel vertical structure MOSFET. The plurality of semiconductor elements 21 may include a compound semiconductor substrate. The composition of the compound semiconductor substrate may include silicon carbide (SiC).

[0020] As in Fig. 11, the plurality of semiconductor elements 21 in the semiconductor device B may include a plurality of first elements 21A and a plurality of second elements 21B. The structure of each of the plurality of second elements 21B may be identical to the structure of each of the plurality of first elements 21A. The plurality of first elements 21A may be mounted on the first front surface 121A of the first conductive layer 121. The plurality of first elements 21A may be arranged along the third direction y. The plurality of second elements 21B may be mounted on the second front surface 122A of the second conductive layer 122. The plurality of second elements 21B may be arranged along the third direction y.

[0021] As in the Fig. 11 and Fig. 16 and Fig. 17, each of the plurality of semiconductor elements 21 may include a first electrode 211, a second electrode 212, a third electrode 213, and a fourth electrode 214.

[0022] As in the Fig. 16 and Fig. As shown in Figure 17, the first electrode 211 may be opposite either the first conductive layer 121 or the second conductive layer 122. A current corresponding to the electric power before conversion by the semiconductor element 21 may flow through the first electrode 211. In other words, the first electrode 211 may correspond to a drain electrode of the semiconductor element 21.

[0023] As in Fig. 16 and Fig. As shown in Figure 17, the second electrode 212 may be located opposite the first electrode 211 in the first direction z. A current corresponding to the electric power after conversion by the semiconductor element 21 may flow into the second electrode 212. In other words, the second electrode 212 may correspond to a source electrode of the semiconductor element 21.

[0024] As in Fig. 16 and Fig. 17, the third electrode 213 may be located on the same side as the second electrode 212 in the first direction z. To drive the semiconductor element 21, a gate voltage may be applied to the third electrode 213. In other words, the third electrode 213 may correspond to the gate electrode of the semiconductor element 21. As shown in Fig. As shown in Figure 11, an area of the third electrode 213, viewed in the first direction z, may be smaller than an area of the second electrode 212.

[0025] As in Fig. As shown in Figure 11, the fourth electrode 214 may be located on the same side as the second electrode 212 in the first direction z and adjacent to the third electrode 213 in the third direction y. The potential of the fourth electrode 214 may be equal to the potential of the second electrode 212.

[0026] As in Fig. 16 and Fig. As shown in Figure 17, a conductive bonding layer 23 may be interposed between one of the first conductive layer 121 and the second conductive layer 122 and the first electrode 211 of one of the plurality of semiconductor elements 21. The conductive bonding layer 23 may be, for example, solder. Additionally, the conductive bonding layer 23 may be configured to include sintered metal particles. The first electrodes 211 of the plurality of first elements 21A may be conductively bonded to the first front surface 121A of the first conductive layer 121 with the inclusion of the conductive bonding layer 23. Thus, the first electrodes 211 of the plurality of first elements 21A may electrically conduct to the first conductive layer 121. The first electrodes 211 of the plurality of second elements 21B may be conductively bonded to the second front surface 122A of the second conductive layer 122, including the conductive bonding layer 23.Accordingly, the first electrodes 211 of the plurality of second elements 21B can electrically conduct to the second conductive layer 122.

[0027] As in Fig. 9 and Fig. 15, the first input terminal 13 may be located in the second direction x opposite the second conductive layer 122 with the first conductive layer 121 therebetween and may be connected to the first conductive layer 121. Thereby, the first input terminal 13 may conduct to the first electrodes 211 of the plurality of first elements 21A, including the first conductive layer 121. The first input terminal 13 may be a p-type (positive) terminal to which a DC supply voltage to be converted is applied. The first input terminal 13 may extend in the second direction x from the first conductive layer 121. The first input terminal 13 may have a covered portion 13A and an exposed portion 13B. As shown in Fig. As shown in Figure 15, the covered portion 13A may be connected to the first conductive layer 121 and may be covered with the sealing resin 50. The covered portion 13A may be flush with the first front surface 121A of the first conductive layer 121. The exposed portion 13B may extend from the covered portion 13A in the second direction x and may be exposed from the sealing resin 50.

[0028] As in Fig. 9 and Fig. 14, the output terminal 14 may be located in the second direction x opposite the first conductive layer 121 with the second conductive layer 122 therebetween and connected to the second conductive layer 122. Thereby, the output terminal 14 may conduct to the first electrodes 211 of the plurality of second elements 21B including the second conductive layer 122. The alternating current converted by the plurality of semiconductor elements 21 may be output from the output terminal 14. In the semiconductor device B, the output terminals 14 may include a pair of regions spaced apart from each other in the third direction y. In addition, the output terminal 14 may be a single component that does not include a pair of regions. The output terminal 14 may have a covered portion 14A and an exposed portion 14B. As shown in Fig. As shown in Figure 14, the covered portion 14A may be connected to the second conductive layer 122 and may be covered with the sealing resin 50. The covered portion 14A may be flush with the second front surface 122A of the second conductive layer 122. The exposed portion 14B may extend from the covered portion 14A in the second direction x and may be exposed from the sealing resin 50.

[0029] As in Fig. 9 and Fig. 14, the second input terminal 15 may be located on the same side as the first input terminal 13 with respect to the first conductive layer 121 and the second conductive layer 122 in the second direction x and may be separated from the first conductive layer 121 and the second conductive layer 122. The second input terminal 15 may lead to the second electrodes 212 of the plurality of second elements 21B. The second input terminal 15 may be an n-type (negative) terminal to which a DC supply voltage to be converted is applied. The second input terminal 15 may include a pair of regions spaced apart from each other in the third direction y. The first input terminal 13 may be located between the pair of regions in the third direction y. The second input terminal 15 may have a covered portion 15A and an exposed portion 15B. As shown in Fig. As shown in FIG. 14, the covered portion 15A may be separated from the first conductive layer 121 and may be covered with the sealing resin 50. The exposed portion 15B may extend from the covered portion 15A in the second direction x and may be exposed from the sealing resin 50.

[0030] A pair of control wirings 60 may form part of a conduction path between the plurality of semiconductor elements 21 and the first signal terminal 161, the second signal terminal 162, the third signal terminal 171, the fourth signal terminal 172, the pair of fifth signal terminals 181, and the pair of sixth signal terminals 182. As shown in Fig. 9 to 11, the pair of control wirings 60 may include a first wiring 601 and a second wiring 602. In the second direction x, the first wiring 601 may be located between the plurality of first elements 21A and the first input terminal 13 and the second input terminal 15. The first wiring 601 may be bonded to the first front surface 121A of the first conductive layer 121. The first wiring 601 may also form part of a conduction path between the seventh signal terminal 19 and the first conductive layer 121. In the second direction x, the second wiring 602 may be located between the plurality of second elements 21B and the output terminal 14. The second wiring 602 may be bonded to the second front surface 122A of the second conductive layer 122. As shown in Fig. 16 and Fig. As shown in FIG. 17, the pair of control wirings 60 may include an insulating layer 61, a plurality of wiring layers 62, a metal layer 63, and a plurality of sheaths 64. The pair of control wirings 60 may be covered by the sealing resin 50 except for a part of each of the plurality of sheaths 64.

[0031] As in Fig. 16 and Fig. As shown in Figure 17, the insulating layer 61 may include a portion interposed in the first direction z between the plurality of wiring layers 62 and the metal layer 63. The insulating layer 61 may be, for example, a ceramic. The insulating layer 61 may be composed of an insulating resin film or the like, as well as a ceramic.

[0032] As in Fig. 16 and Fig. 17, the plurality of wiring layers 62 may be located on one side of the insulating layer 61 in the first direction z. The composition of the plurality of wiring layers 62 may include copper. As shown in Fig. As shown in FIG. 11, the plurality of wiring layers 62 may include a first wiring layer 621, a second wiring layer 622, a pair of third wiring layers 623, a fourth wiring layer 624, and a fifth wiring layer 625. The pair of third wiring layers 623 may be adjacent to each other in the third direction y.

[0033] As in Fig. 16 and Fig. 17, the metal layer 63 may be located opposite the plurality of wiring layers 62 in the first direction z with the insulating layer 61 therebetween. The composition of the metal layer 63 may include copper. The metal layer 63 of the first wiring 601 may be bonded to the first front surface 121A of the first conductive layer 121 by the first adhesive layer 68. The metal layer 63 of the second wiring 602 may be bonded to the second front surface 122A of the second conductive layer 122 by the first adhesive layer 68. The first adhesive layer 68 may be a conductive or non-conductive material. The first adhesive layer 68 may be, for example, solder.

[0034] As in Fig. 16 and Fig. 17, each of the plurality of sleeves 64 may be bonded to one of the plurality of wiring layers 62 by the second adhesive layer 69. The plurality of sleeves 64 may be a conductive material such as metal. Each of the plurality of sleeves 64 may be cylindrical and extend along the first direction z. One end of the plurality of sleeves 64 may be conductively bonded to one of the plurality of wiring layers 62. As shown in Fig. 8 and Fig. As shown in Figure 15, an end surface 641 corresponding to the other end of the plurality of sleeves 64 may be exposed from the upper surface 51 of the sealing resin 50, which will be described later. The second adhesive layer 69 may be conductive. The second adhesive layer 69 may be, for example, solder.

[0035] As in Fig. 10, a thermistor 22 of the thermistor pair 22 may be conductively bonded to the pair of third wiring layers 623 of the first wiring 601. As shown in Fig. 10, the other thermistor 22 of the thermistor pair 22 may be conductively bonded to the pair of third wiring layers 623 of the second wiring 602. The thermistor pair 22 may be, for example, NTC (negative temperature coefficient) thermistors, which may have a property that their resistance decreases slowly as the temperature increases. The thermistor pair 22 may be used as a sensor for detecting the temperature of the semiconductor device B.

[0036] The first signal terminal 161, the second signal terminal 162, the third signal terminal 171, the fourth signal terminal 172, the pair of fifth signal terminals 181, the pair of sixth signal terminals 182, and the seventh signal terminal 19 may each be metal pins extending in the first direction z, as shown in Fig. 1. These terminals may protrude from the upper surface 51 of the sealing resin 50, which will be described later. Furthermore, these terminals may be individually press-fitted into the plurality of sleeves 64 of the pair of control wirings 60. Thus, each of these terminals may be supported by one of the plurality of sleeves 64 and may lead to one of the plurality of wiring layers 62.

[0037] As in Fig. 11 and Fig. As shown in FIG. 16, the first signal terminal 161 may be press-fitted into the sleeve 64 bonded to the first wiring layer 621 of the first wiring 601 among the plurality of sleeves 64 of the pair of control wirings 60. Thus, the first signal terminal 161 may be supported by the sleeve 64 and may conduct to the first wiring layer 621 of the first wiring 601. Furthermore, the first signal terminal 161 may conduct to the third electrodes 213 of the plurality of first elements 21A. A gate voltage may be applied to the first signal terminal 161 to drive the plurality of first elements 21A.

[0038] As in Fig. 11 and Fig. As shown in FIG. 17, the second signal terminal 162 may be press-fitted into the sleeve 64 bonded to the first wiring layer 621 of the second wiring 602 among the plurality of sleeves 64 of the pair of control wirings 60. Thus, the second signal terminal 162 may be supported by the sleeve 64 and may conduct to the first wiring layer 621 of the second wiring 602. Furthermore, the second signal terminal 162 may conduct to the third electrodes 213 of the plurality of second elements 21B. A gate voltage may be applied to the second signal terminal 162 to drive the plurality of second elements 21B.

[0039] As in Fig. 8, the third signal terminal 171 may be located in the third direction y next to the first signal terminal 161. As shown in Fig. As shown in FIG. 11, the third signal terminal 171 may be press-fitted into the sleeve 64 bonded to the second wiring layer 622 of the first wiring 601 among the plurality of sleeves 64 of the pair of control wirings 60. Thereby, the third signal terminal 171 may be supported by the sleeve 64 and may conduct to the second wiring layer 622 of the first wiring 601. Further, the third signal terminal 171 may conduct to the fourth electrodes 214 of the plurality of first elements 21A. A voltage corresponding to the maximum current of the currents flowing into the fourth electrode 214 of each of the plurality of first elements 21A may be applied to the third signal terminal 171.

[0040] As in Fig. 8, the fourth signal terminal 172 may be located adjacent to the second signal terminal 162 in the third direction y. As shown in Fig. As shown in FIG. 11, the fourth signal terminal 172 may be press-fitted into the sleeve 64 bonded to the second wiring layer 622 of the second wiring 602 among the plurality of sleeves 64 of the pair of control wirings 60. Thereby, the fourth signal terminal 172 may be supported by the sleeve 64 and may conduct to the second wiring layer 622 of the second wiring 602. Further, the fourth signal terminal 172 may conduct to the fourth electrodes 214 of the plurality of second elements 21B. The voltage corresponding to the maximum current of the currents flowing into the fourth electrode 214 of each of the plurality of second elements 21B may be applied to the fourth signal terminal 172.

[0041] As in Fig. 8, the pair of fifth signal terminals 181 may be located opposite the third signal terminal 171, with the first signal terminal 161 located therebetween in the third direction y. The pair of fifth signal terminals 181 may be adjacent to each other in the third direction y. As shown in Fig. 11, the pair of fifth signal terminals 181 may be individually press-fitted into the pair of sleeves 64 bonded to the pair of third wiring layers 623 of the first wiring 601 among the plurality of sleeves 64 of the pair of control wirings 60. Thus, the pair of fifth signal terminals 181 may be supported by the pair of sleeves 64 and conduct to the pair of third wiring layers 623 of the first wiring 601. Furthermore, the pair of fifth signal terminals 181 may conduct to the thermistor 22 conductively bonded to the pair of third wiring layers 623 of the first wiring 601 of the pair of thermistors 22.

[0042] As in Fig. 8, the pair of sixth signal terminals 182 may be located opposite the fourth signal terminal 172, with the second signal terminal 162 located therebetween in the third direction y. The pair of sixth signal terminals 182 may be adjacent to each other in the third direction y. As shown in Fig. 11, the pair of sixth signal terminals 182 may be individually press-fitted into the pair of sleeves 64 bonded to the pair of third wiring layers 623 of the second wiring 602 among the plurality of sleeves 64 of the pair of control wirings 60. Thus, the pair of sixth signal terminals 182 may be supported by the pair of sleeves 64 and conduct to the pair of third wiring layers 623 of the second wiring 602. Furthermore, the pair of sixth signal terminals 182 may conduct to the thermistor 22 conductively bonded to the pair of third wiring layers 623 of the second wiring 602 of the pair of thermistors 22.

[0043] As in Fig. 8, the seventh signal terminal 19 may be located opposite the first signal terminal 161, with the third signal terminal 171 located therebetween in the third direction y. As shown in Fig. As shown in FIG. 11, the seventh signal terminal 19 may be press-fitted into the sleeve 64 bonded to the fifth wiring layer 625 of the first wiring 601 among the plurality of sleeves 64 of the pair of control wirings 60. Thus, the seventh signal terminal 19 may be supported by the sleeve 64 and may conduct to the fifth wiring layer 625 of the first wiring 601. Furthermore, the seventh signal terminal 19 may conduct to the first conductive layer 121. A voltage corresponding to a DC power supply input to the first input terminal 13 and the second input terminal 15 may be applied to the seventh signal terminal 19.

[0044] As in Fig. 11, the plurality of first wires 41 may be conductively bonded to the third electrodes 213 of the plurality of first elements 21A and the fourth wiring layer 624 of the first wiring 601. As shown in Fig. As shown in FIG. 11, the plurality of third wires 43 may be conductively bonded to the fourth wiring layer 624 of the first wiring 601 and the first wiring layer 621 of the first wiring 601. As a result, the first signal terminal 161 may conduct to the third electrodes 213 of the plurality of first elements 21A. The composition of the plurality of first wires 41 and the plurality of third wires 43 may include gold (Au). Additionally, the composition of the plurality of first wires 41 and the plurality of third wires 43 may include copper or aluminum (Al).

[0045] As in Fig. 11, the plurality of first wires 41 may be further conductively bonded to the third electrodes 213 of the plurality of second elements 21B and the fourth wiring layer 624 of the second wiring 602. As shown in Fig. 11, the plurality of third wires 43 may be further conductively bonded to the fourth wiring layer 624 of the second wiring 602 and the first wiring layer 621 of the second wiring 602. As a result, the second signal terminal 162 may conduct to the third electrodes 213 of the plurality of second elements 21B.

[0046] As in Fig. 11, the plurality of second wires 42 may be conductively bonded to the fourth electrodes 214 of the plurality of first elements 21A and the second wiring layer 622 of the first wiring 601. As a result, the third signal terminal 171 may conduct to the fourth electrodes 214 of the plurality of first elements 21A. As shown in Fig. 11, the plurality of second wires 42 may be further conductively bonded to the fourth electrodes 214 of the plurality of second elements 21B and the second wiring layer 622 of the second wiring 602. As a result, the fourth signal terminal 172 may conduct to the fourth electrodes 214 of the plurality of second elements 21B. The composition of the plurality of second wires 42 may include gold. Additionally, the composition of the plurality of second wires 42 may include copper or aluminum.

[0047] As in Fig. As shown in FIG. 11, the fourth wire 44 may be conductively bonded to the fifth wiring layer 625 of the first wiring 601 and the first front surface 121A of the first conductive layer 121. As a result, the seventh signal terminal 19 may conduct to the first conductive layer 121. The composition of the fourth wire 44 may include gold. Additionally, the composition of the fourth wire 44 may include copper or aluminum.

[0048] As in the Fig. 11 and Fig. 16, the first conductive member 31 may be conductively bonded to the second electrodes 212 of the plurality of first elements 21A and the second front surface 122A of the second conductive layer 122. As a result, the second electrodes 212 of the plurality of first elements 21A may conduct to the second conductive layer 122. The composition of the first conductive member 31 may include copper. The first conductive member 31 may be a metal clip. As shown in Fig. 11, the first conductive member 31 may include a body portion 311, a plurality of first bonding portions 312, a plurality of first coupling portions 313, a second bonding portion 314, and a second coupling portion 315.

[0049] The body portion 311 may form a main part of the first conductive member 31. As shown in Fig. 11, the body portion 311 may extend in the third direction y. As shown in Fig. 15, the body portion 311 may span a region between the first conductive layer 121 and the second conductive layer 122.

[0050] As in Fig. 16, the plurality of first bonding portions 312 may be individually bonded to the second electrodes 212 of the plurality of first elements 21A. Each of the plurality of first bonding portions 312 may be opposed to the second electrode 212 of one of the plurality of first elements 21A.

[0051] As in Fig. 11, the plurality of first coupling portions 313 may be connected to the body portion 311 and the plurality of first bonding portions 312. The plurality of first coupling portions 313 may be separated from each other in the third direction y. As shown in Fig. 15, the plurality of first coupling portions 313 may be inclined, as viewed in the third direction y, so as to be separated from the first front surface 121A of the first conductive layer 121 when extending from the plurality of first bonding portions 312 toward the body portion 311.

[0052] As in Fig. 11 and Fig. As shown in FIG. 15, the second bonding portion 314 may be bonded to the second front surface 122A of the second conductive layer 122. The second bonding portion 314 may be opposite to the second front surface 122A. The second bonding portion 314 may extend in the third direction y. A dimension in the third direction y of the second bonding portion 314 may be equal to a dimension in the third direction y of the body portion 311.

[0053] As in Fig. 11 and Fig. 15, the second coupling portion 315 may be connected to the body portion 311 and the second bonding portion 314. Viewed in the third direction y, the second coupling portion 315 may be inclined to be separated from the second front surface 122A of the second conductive layer 122 as it extends from the second bonding portion 314 toward the body portion 311. A dimension in the third direction y of the second coupling portion 315 may be equal to a dimension in the third direction y of the body portion 311.

[0054] As in Fig. 15, Fig. 16 and Fig. 19, the semiconductor device B may further include a first conductive bonding layer 33. The first conductive bonding layer 33 may be interposed between the second electrodes 212 of the plurality of first elements 21A and the plurality of first bonding portions 312. The first conductive bonding layer 33 may conductively bond the second electrodes 212 of the plurality of first elements 21A and the plurality of first bonding portions 312. The first conductive bonding layer 33 may be, for example, solder. Additionally, the first conductive bonding layer 33 may include sintered metal particles.

[0055] As in Fig. 15, the semiconductor device B may further include a second conductive bonding layer 34. The second conductive bonding layer 34 may be interposed between the second front surface 122A of the second conductive layer 122 and the second bonding portion 314. The second conductive bonding layer 34 may conductively bond the second front surface 122A and the second bonding portion 314. The second conductive bonding layer 34 may be, for example, solder. Additionally, the second conductive bonding layer 34 may include sintered metal particles.

[0056] As in the Fig. 10 and Fig. 17, the second conductive member 32 may be conductively bonded to the second electrodes 212 of the plurality of second elements 21B and the covered portion 15A of the second input terminal 15. Accordingly, the second electrodes 212 of the plurality of second elements 21B may conduct to the second input terminal 15. The composition of the second conductive member 32 may include copper. The second conductive member 32 may be a metal clip. As shown in Fig. 10, the second conductive member 32 may include a pair of body portions 321, a plurality of third bonding portions 322, a plurality of third coupling portions 323, a pair of fourth bonding portions 324, a pair of fourth coupling portions 325, a plurality of intermediate portions 326, and a plurality of cross member portions 327.

[0057] As in Fig. 10, the pair of body portions 321 may be spaced apart from each other in the third direction y. The pair of body portions 321 may extend in the second direction x. As shown in Fig. As shown in Figure 14, the pair of body portions 321 may be positioned parallel to the first front surface 121A of the first conductive layer 121 and the second front surface 122A of the second conductive layer 122. The pair of body portions 321 may be further separated from the first front surface 121A and the second front surface 122A than the body portion 311 of the first conductive member 31.

[0058] As in Fig. 10, the plurality of intermediate sections 326 may be spaced apart from each other in the third direction y and may be located between the pair of body sections 321 in the third direction y. The plurality of intermediate sections 326 may extend in the second direction x. A dimension in the second direction x of each of the plurality of intermediate sections 326 may be smaller than a dimension in the second direction x of each of the pair of body sections 321.

[0059] As in Fig. As shown in FIG. 17, the plurality of third bonding portions 322 may be individually bonded to the second electrodes 212 of the plurality of second elements 21B. Each of the plurality of third bonding portions 322 may be opposed to the second electrode 212 of one of the plurality of second elements 21B.

[0060] As in Fig. 10 and Fig. 18, the plurality of third coupling portions 323 may be connected to both sides of the plurality of third bonding portions 322 in the third direction y. Further, the plurality of third coupling portions 323 may be connected to either the pair of body portions 321 or the plurality of intermediate portions 326. When viewed in the second direction x, each of the plurality of third coupling portions 323 may be inclined to be separated from the second front surface 122A of the second conductive layer 122 when extending from one of the plurality of third bonding portions 322 toward one of the pair of body portions 321 and the plurality of intermediate portions 326.

[0061] As in Fig. 10 and Fig. 14, the pair of fourth bonding portions 324 may be bonded to the covered portion 15A of the second input terminal 15. The pair of fourth bonding portions 324 may be opposite to the covered portion 15A.

[0062] As in Fig. 10 and Fig. As shown in Figure 14, the pair of fourth coupling portions 325 may be connected to the pair of body portions 321 and the pair of fourth bonding portions 324. The pair of fourth coupling portions 325 may be inclined, as viewed in the third direction y, so as to be separated from the first front surface 121A of the first conductive layer 121 in the first direction z when extending from the pair of fourth bonding portions 324 toward the pair of body portions 321.

[0063] As in Fig. 10 and Fig. 19, the plurality of cross beam portions 327 may be arranged along the third direction y. Viewed in the first direction z, the plurality of cross beam portions 327 may include regions that individually overlap the plurality of first bonding portions 312 of the first conductive member 31. Both sides in the third direction y of the plurality of cross beam portions 327 that are located at the center in the third direction y may lead to the plurality of intermediate portions 326 among the plurality of cross beam portions 327. Both sides in the third direction y of the remaining two cross beam portions 327 among the plurality of cross beam portions 327 may be connected to one of the pair of body portions 321 and one of the plurality of intermediate portions 326.When viewed in the second direction x, the plurality of cross member portions 327 may be convex in the first direction z toward the side to which the first front surface 121A of the first conductive layer 121 faces.

[0064] As in Fig. 15, Fig. 17 and Fig. 18, the semiconductor device B may further include a third conductive bonding layer 35. The third conductive bonding layer 35 may be interposed between the second electrodes 212 of the plurality of second elements 21B and the plurality of third bonding portions 322. The third conductive bonding layer 35 may conductively bond the second electrodes 212 of the plurality of second elements 21B and the plurality of third bonding portions 322. The third conductive bonding layer 35 may be, for example, solder. Additionally, the third conductive bonding layer 35 may include sintered metal particles.

[0065] As in Fig. 14, the semiconductor device B may further include a fourth conductive bonding layer 36. The fourth conductive bonding layer 36 may be interposed between the covered portion 15A of the second input terminal 15 and the pair of fourth bonding portions 324. The fourth conductive bonding layer 36 may conductively bond the covered portion 15A and the pair of fourth bonding portions 324. The fourth conductive bonding layer 36 may be, for example, solder. Additionally, the fourth conductive bonding layer 36 may include sintered metal particles.

[0066] As in Fig. 14, Fig. 15, Fig. 18 and Fig. As shown in Figure 19, the sealing resin 50 may cover the first conductive layer 121, the second conductive layer 122, the plurality of semiconductor elements 21, the first conductive member 31, and the second conductive member 32. Furthermore, the sealing resin 50 may cover a part of each of the base material 11, the first input terminal 13, the output terminal 14, and the second input terminal 15. The sealing resin 50 may have electrically insulating properties. The sealing resin 50 may be a material including, for example, black epoxy resin. As shown in Fig. 8 and Fig. 12 to 15, the sealing resin 50 may have an upper surface 51, a lower surface 52, a pair of first side surfaces 53, a pair of second side surfaces 54, and a pair of recesses 55.

[0067] As in Fig. 14 and Fig. 15, the upper surface 51 may face the same side as the first front surface 121A of the first conductive layer 121 facing the first direction z. As shown in Fig. 14 and Fig. 15, the lower surface 52 may face a side opposite the side to which the upper surface 51 faces in the first direction z. As shown in Fig. 13, the radiation layer 113 of the base material 11 may be exposed from the lower surface 52.

[0068] As in Fig. 8 and Fig. 12, the pair of first lateral surfaces 53 may be separated from each other in the second direction x. The pair of first lateral surfaces 53 may face in the second direction x and extend in the third direction y. The pair of first lateral surfaces 53 may be continuous to the top surface 51. From one first lateral surface 53 of the pair of first lateral surfaces 53, an exposed portion 13B of the first input terminal 13 and an exposed portion 15B of the second input terminal 15 may be exposed. From the other first lateral surface 53 of the pair of first lateral surfaces 53, the exposed portion 14B of the output terminal 14 may be exposed.

[0069] As in Fig. 8 and Fig. As shown in Figure 13, the pair of second lateral surfaces 54 may be separated from each other in the third direction y. The pair of second lateral surfaces 54 may face each other in the third direction y and extend in the second direction x. The pair of second lateral surfaces 54 may be continuous with the upper surface 51 and the lower surface 52.

[0070] As in Fig. 8 and Fig. 13, the pair of recesses 55 may be recessed in the second direction x from the first lateral surface 53 where the exposed portion 13B of the first input terminal 13 and the exposed portion 15B of the second input terminal 15 are exposed from the pair of first lateral surfaces 53. The pair of recesses 55 may extend from the upper surface 51 to the lower surface 52 in the first direction z. The pair of recesses 55 may be located on both sides in the third direction y of the first input terminal 13.

[0071] The following are based on Fig. 1 to 7 describe the bonding material 70 and the cooler 80 with which the cooling structure A10 is provided.

[0072] The cooler 80 may be used to cool the semiconductor device B. The cooler 80 may be made of a material including, for example, aluminum.

[0073] As in Fig. 2 to 5, the cooler 80 may include a housing 81 and a heat dissipation member 82. The housing 81 may include a hollow portion 811, an inlet 812, and an outlet 813. The hollow portion 811 may be located within the housing 81. The inlet 812 and the outlet 813 may be connected to the hollow portion 811. The inlet 812 and the outlet 813 may be opposite each other with respect to the hollow portion 811 in the third direction y. In the cooler 80, the coolant may be configured to flow from the inlet 812 through the hollow portion 811 to the outlet 813.

[0074] As in Fig. As shown in Figures 2 to 5, the housing 81 may have a mounting surface 81A facing the first direction z. The mounting surface 81A may be opposite the radiating layer 113 of the base material 11.

[0075] As in Fig. 2 to 5, the hollow portion 811 of the housing 81 may include a highly narrowed portion 811A. The highly narrowed portion 811A refers to a part of the hollow portion 811 located along the direction orthogonal to the first direction z and having the smallest cross-sectional area in the section from the inlet 812 to the outlet 813.

[0076] As in Fig. 2 to 5, the heat dissipation member 82 may be housed in the highly constricted portion 811A of the hollow portion 811 of the housing 81. The heat dissipation member 82 may be connected to the housing 81. As shown in Fig. 2 and Fig. 5, the heat dissipation member 82 may consist of a plurality of fins spaced apart from each other in the second direction x. As shown in Fig. 2 and Fig. 4, each of the plurality of ribs may extend in the third direction y. Thus, each of the plurality of ribs may extend in a direction orthogonal to the first direction z and along the section from the inlet 812 to the outlet 813.

[0077] As in Fig. 2, when viewed in the first direction z, both the first conductive layer 121 and the second conductive layer 122 may overlap the highly narrowed portion 811A of the hollow portion 811 of the housing 81. Further, when viewed in the first direction z, both the first conductive layer 121 and the second conductive layer 122 may overlap the heat dissipation member 82.

[0078] As in Fig. 4 and Fig. 5, the bonding material 70 can bond the casing 81 of the cooler 80 and the radiating layer 113 of the base material 11. As shown in Fig. 2, the bonding material 70 may extend outwardly from the sealing resin 50 as viewed in the first direction z.

[0079] As in Fig. 6 and Fig. 7, the bonding material 70 may have a first surface 71 and a second surface 72 facing each other in the first direction z. The first surface 71 may be in contact with the radiation layer 113 of the base material 11. The second surface 72 may be in contact with the mounting surface 81A of the housing 81 of the cooler 80. An area of the second surface 72 may be larger than an area of the first surface 71. As shown in Fig. 2, the entire first surface 71 may overlap the second surface 72. As shown in Fig. 4 and Fig. 6, the first surface 71 may be in contact with the lower surface 52 of the sealing resin 50.

[0080] As in Fig. 2, the peripheral end 721 of the second surface 72 may include a portion that is a convex curve.

[0081] As in Fig. As shown in Figure 6, the bonding material 70 may have an end surface 73 facing in a direction perpendicular to the first direction z. The end surface 73 may curve toward the outside of the bonding material 70.

[0082] As in Fig. 7, a dimension in the first direction z of the bonding material 70 may be smaller than a dimension in the first direction z of the radiating layer 113 of the base material 11. The dimension in the first direction z of the bonding material 70 may be less than or equal to one-tenth of the dimension in the first direction z of the radiating layer 113.

[0083] As in Fig. 2, when viewed in the first direction z, the exposed portion 13B of the first input port 13, the exposed portions 14B of the output port 14, and the exposed portion 15B of the second input port 15 may each be separated from the cooler 80 and the bonding material 70.

[0084] As in Fig. 1 and Fig. 2, in the cooling structure A10, the entire upper surface 51 of the sealing resin 50 may be exposed to the outside.

[0085] Furthermore, with respect to the cooling structure A10, the following findings were obtained from the analysis conducted by the inventor of the present disclosure. When the elastic modulus of the insulating layer 111 of the base material 11 is 300 GPa or more and the difference in the linear expansion coefficient between the radiator 80 and the insulating layer 111 is 12 × 10 -6(1 / K) or higher, the dimension of the bonding material 70 in the first direction z is preferably set to 40 µm or more. Further, when the elastic modulus of the insulating layer 111 is 30 GPa or less and the difference in the linear expansion coefficient between the cooler 80 and the insulating layer 111 is 50 × 10 -6 (1 / K) or lower, the dimension of the bonding material 70 in the first direction z is preferably set to 20 µm or more. Therefore, when the thermal stress caused by the heat generated by the semiconductor device B acts on the bonding material 70, the maximum thermal stress can be lower than the yield strength of the bonding material 70.

[0086] The effect of the cooling structure A10 is described below.

[0087] The cooling structure A10 may be provided with a semiconductor device B including the base material 11 and a sealing resin 50, a cooler 80, and a bonding material 70 that bonds the cooler 80 and the base material 11. Viewed in the first direction z, the bonding material 70 may extend outward from the sealing resin 50. The bonding material 70 may have a first surface 71 in contact with the base material 11 and a second surface 72 in contact with the cooler 80. The area of the second surface 72 can be checked by visually inspecting the state of the bonding material 70 by adopting the present configuration to allow the area of the second surface 72 to be larger than the area of the first surface 71.Furthermore, since the area of the second surface 72 is larger than the area of the first surface 71, the heat in the bonding material 70 can easily disperse in a direction orthogonal to the first direction z. This can reduce the thermal resistance in the first direction z of the bonding material 70. Therefore, according to this configuration, in the cooling structure A10, it is possible to easily check the bonding state of the semiconductor device B with respect to the cooler 80 and simultaneously increase the cooling efficiency of the semiconductor device B.

[0088] When viewed in the first direction z, the entire first surface 71 of the bonding material 70 may overlap the second surface 72 of the bonding material 70. By adopting this configuration, heat can be more evenly distributed in the bonding material 70 in a direction orthogonal to the first direction z. This can suppress uneven distribution of thermal resistance in a direction orthogonal to the first direction z (the thermal resistance of the first direction z) of the bonding material 70.

[0089] The first surface 71 of the bonding material 70 can contact the bottom surface 52 of the sealing resin 50. By adopting this configuration, the contact area of the bonding material 70 with respect to the semiconductor device B can be increased. This can improve the bonding strength between the cooler 80 and the semiconductor device B.

[0090] When viewed in the first direction z, the peripheral end 721 of the second surface 72 of the bonding material 70 may include a portion that represents a convex curve. Furthermore, the end surface 73 of the bonding material 70 may bulge toward the outside of the bonding material 70. This configuration implies that the viscosity of the bonding material 70 is relatively high and that sufficient compressive stress is applied to the bonding material 70 in the first direction z when bonding the semiconductor device B to the cooler 80. This configuration is thus an indicator that the bonding state between the cooler 80 and the semiconductor device B is favorable.

[0091] In the cooling structure A10, the entire upper surface 51 of the sealing resin 50 can be exposed to the outside. This configuration implies that a fixing member for fixing the semiconductor device B to the cooler 80 is not necessary. This can suppress a decrease in the insulation breakdown voltage of the semiconductor device B, especially when the fixing member is made of metal.

[0092] The semiconductor device B may further include the first input terminal 13 leading to the first conductive layer 121 and the second input terminal 15 leading to the second conductive layer 122. When viewed in the first direction z, both the exposed portion 13B of the first input terminal 13 and the exposed portion 15B of the second input terminal 15 may be separated from the cooler 80 and the bonding material 70. By adopting this configuration, a decrease in the insulation breakdown voltage of the semiconductor device B can be suppressed.

[0093] The dimension in the first direction z of the first conductive layer 121 and the second conductive layer 122 may each be larger than the dimension in the first direction z of the base material 11. By adopting this configuration, heat diffusion in both the first conductive layer 121 and the second conductive layer 122 in a direction orthogonal to the first direction z is facilitated. This can reduce the thermal resistance in the first direction z of both the first conductive layer 121 and the second conductive layer 122.

[0094] In the cooling structure A10, the cooler 80 may include the housing 81 with which the second surface 72 of the bonding material 70 is in contact. The housing 81 may include the hollow portion 811 located inside the housing 81, and the inlet 812 and the outlet 813 lead to the hollow portion 811. When viewed in the first direction z, the first conductive layer 121 may overlap the hollow portion 811. By adopting this configuration, a coolant can flow into the hollow portion 811, and thus the cooling efficiency of the semiconductor device B can be improved.

[0095] The hollow portion 811 of the housing 81 may include the highly constricted portion 811A, which is along a direction orthogonal to the first direction z and has a minimum cross-sectional area in the section from the inlet 812 to the outlet 813. When viewed in the first direction z, the first conductive layer 121 may overlap the highly constricted portion 811A. By adopting this configuration, the flow velocity of the coolant in the highly constricted portion 811A can be increased, and thus the cooling efficiency of the semiconductor device B can be further improved.

[0096] The cooler 80 may include the heat dissipation member 82 housed in the highly constricted portion 811A of the housing 81 and connected to the housing 81. As viewed in the first direction z, both the first conductive layer 121 and the second conductive layer 122 may overlap the heat dissipation member 82. By adopting this configuration, the contact area of the cooler 80 with respect to the coolant is expanded, and thus the cooling efficiency of the semiconductor device B can be further improved.

[0097] The heat dissipation member 82 may include the plurality of fins. Each of the plurality of fins may extend in a direction orthogonal to the first direction z and along the section from the inlet 812 to the outlet 813. By adopting this configuration, the obstruction of the coolant flow in the highly constricted portion 811A of the radiator 80 can be suppressed. Second embodiment:

[0098] Based on Fig. 20 to 22, a cooling structure (hereinafter referred to as "cooling structure A20") for a semiconductor device according to a second embodiment of the present disclosure will be described. In these figures, elements identical to or similar to those of the cooling structure A10 described above are marked with the same reference numerals, and redundant descriptions are omitted.

[0099] In the cooling structure A20, the configuration of the cooler 80 differs from the configuration of the cooling structure A10.

[0100] As in Fig. 20 to 22, the cooler 80 may include a base portion 83 and a radiating portion 84 instead of the housing 81 and the heat dissipation member 82. The base portion 83 may be flat. The base portion 83 may have a mounting surface 83A and a back surface 83B. The mounting surface 83A and the back surface 83B may face each other in the first direction z. The mounting surface 83A may be opposite to the radiating layer 113 of the base material 11. The second surface 72 of the bonding material 70 may be in contact with the mounting surface 83A.

[0101] As in Fig. 21 and Fig. 22, the radiating portion 84 may protrude from the rear surface 83B of the base portion 83 in the first direction z. The radiating portion 84 may be positioned relative to the base portion 83 in the first direction z relative to the base material 11. The radiating portion 84 may be exposed to the outside. The radiating portion 84 may consist of a plurality of pins spaced apart from each other in a direction orthogonal to the first direction z. As shown in Fig. 20, the radiating section 84 may overlap both the first conductive layer 121 and the second conductive layer 122 when viewed in the first direction z.

[0102] Next, the effects of the cooling structure A20 are described.

[0103] The cooling structure A20 may include the semiconductor device B including the base material 11 and a sealing resin 50, the cooler 80, and the bonding material 70 that bonds the cooler 80 and the base material 11. When viewed in the first direction z, the bonding material 70 may extend outward from the sealing resin 50. The bonding material 70 may have the first surface 71 in contact with the base material 11 and the second surface 72 in contact with the cooler 80. The area of the second surface 72 may be larger than the area of the first surface 71. Therefore, according to this configuration, even with the cooling structure A20, it is possible to easily check the bonding state of the semiconductor device B with the cooler 80 and simultaneously increase the cooling efficiency of the semiconductor device B. Furthermore, the cooling structure A20 exhibits the same effect as that of the cooling structure A10 because it has the same configuration as the cooling structure A10.

[0104] In the cooling structure A20, the base portion 83 may be in contact with the second surface 72 of the bonding material 70, and the radiating portion 84 may protrude from the base portion 83 in the first direction z. The radiating portion 84 may be exposed to the outside. Viewed in the first direction z, both the first conductive layer 121 and the second conductive layer 122 may overlap the radiating portion 84. By adopting this configuration, the surface area of the cooler 80 is expanded, and thus the cooling efficiency of the semiconductor device B can be improved.

[0105] The present disclosure is not limited to the aforementioned embodiments. The specific configuration of the individual parts of the disclosure can be designed and modified in various ways.

[0106] The present disclosure may include the embodiments described in the following clauses. Clause 1.

[0107] Cooling structure for a semiconductor device, comprising: a semiconductor device comprising: a base material, a conductive layer bonded to the base material, a semiconductor element located on a side opposite to the base material in a first direction with respect to the conductive layer and bonded to the conductive layer, and a sealing resin covering the conductive layer and the semiconductor element; a cooler; and a bonding material that bonds the cooler and the base material, wherein the bonding material extends outwards from the sealing resin, viewed in the first direction, the bonding material has a first surface and a second surface facing each other in the first direction, the first surface is in contact with the base material, the second surface is in contact with the cooler and an area of the second surface is larger than an area of the first surface. Clause 2.

[0108] A cooling structure for a semiconductor device according to clause 1, wherein, viewed in the first direction, a part of the first surface overlaps the second surface. Clause 3.

[0109] Cooling structure for a semiconductor device according to clause 2, wherein the sealing resin has a lower surface facing the radiator in the first direction, and the first surface is in contact with the lower surface. Clause 4.

[0110] Cooling structure for a semiconductor device according to clause 3, wherein the sealing resin has an upper surface facing a side opposite to a side facing the lower surface in the first direction, and the entire upper surface is exposed to the outside. Clause 5.

[0111] A cooling structure for a semiconductor device according to clause 4, wherein, viewed in the first direction, a peripheral end of the second surface includes a cutout that is a convex curve. Clause 6.

[0112] Cooling structure for a semiconductor device according to clause 5, wherein the bonding material has an end surface facing a direction orthogonal to the first direction and the end surface curves towards an outer side of the bonding material. Clause 7.

[0113] A cooling structure for a semiconductor device according to clause 6, wherein the semiconductor element is conductively bonded to the conductive layer. Clause 8.

[0114] A cooling structure for a semiconductor device according to clause 7, wherein a dimension in the first direction of the conductive layer is larger than a dimension in the first direction of the base material. Clause 9.

[0115] Cooling structure for a semiconductor device according to clause 8, wherein the semiconductor device has a first input terminal and a second input terminal conductive to the conductive layer, each of the first input terminal and the second input terminal has an exposed portion exposed from the sealing resin and viewed in the first direction, the exposed portion is separated from the cooler and the bonding material. Clause 10.

[0116] Cooling structure for a semiconductor device according to any one of clauses 1 to 9, wherein the base material comprises an insulating layer, a metal layer laminated on the insulating layer, and a radiating layer opposite the metal layer and laminated on the insulating layer, the conductive layer is bonded to the metal layer and the first surface is in contact with the radiation layer. Clause 11.

[0117] A cooling structure for a semiconductor device according to clause 10, wherein a dimension of the bonding material in the first direction is smaller than a dimension of the radiating layer in the first direction. Clause 12.

[0118] Cooling structure for a semiconductor device according to clause 10, wherein the cooler has a housing in contact with the second surface, the housing has a hollow section located inside the housing and an inlet and an outlet leading to the hollow section, and viewed from the first direction, the conductive layer overlaps the hollow section. Clause 13

[0119] Cooling structure for a semiconductor device according to clause 12, wherein the hollow section extends along a direction orthogonal to the first direction and includes a strongly narrowed section having a smallest cross-sectional area in a cutout from the inlet to the outlet and viewed in the first direction, the conductive layer overlaps the strongly narrowed section. Clause 14.

[0120] Cooling structure for a semiconductor device according to clause 13, wherein the cooler is housed in the highly constricted section and has a heat dissipation component connected to the housing and viewed from the first direction, the conductive layer overlaps the heat dissipation component. Clause 15.

[0121] Cooling structure for a semiconductor device according to clause 14, wherein the heat dissipation member includes a plurality of fins and each of the plurality of ribs extends in a direction orthogonal to the first direction and along a cutaway from the inlet to the outlet. Clause 16.

[0122] Cooling structure for a semiconductor device according to clause 10, wherein the cooler has a base portion in contact with the second surface and a radiating portion located opposite the base material with respect to the base portion and projecting from the base portion in the first direction, the radiation section is exposed to the outside and viewed from the first direction, the conductive layer overlaps the radiating section. REFERENCE SYMBOL

[0123] A10, A20: Cooling structure B: Semiconductor device 11: Base material 111: Insulating layer 112: Metal layer 113: Radiation layer 121: First conductive layer 121A: First front surface 122: Second conductive layer 122A: Second front surface 123: Bonding layer 13: First input connection 13A: Covered section 13B: Exposed section 14: Output terminal 14A: Covered section 14B: Exposed section 15: Second input connection 15A: Covered section 15B: Exposed section 161: First signal connection 162: Second signal connection 171: Third signal connection 172: Fourth signal connection 181: Fifth signal connection 182: Sixth signal connection 19: Seventh signal connection 21: Semiconductor element 21A: First Element 21B: Second Element 211: First electrode 212: Second electrode 213: Third electrode 214: Fourth electrode 22: Thermistor 23: Conductive bonding layer 31: First conductive component 311: Body section 312: First bonding section 313: First coupling section 314: Second bonding section 315: Second coupling section 32: Second conductive component 321: Body section 322: Third bonding section 323: Third coupling section 324: Fourth bonding section 325: Fourth coupling section 326: Intermediate section 327: Cross beam section 33: First conductive bonding layer 34: Second conductive bonding layer 35: Third conductive bonding layer 36: Fourth conductive bonding layer 41: First wire 42: Second wire 43: Third wire 44: Fourth wire 50: Sealing resin 51: Upper surface 52: Lower surface 53: First lateral surface 54: Second side surface 55: Recess 60: Control wiring 601: First wiring 602: Second wiring 61: Insulating layer 62: Wiring layer 621: First wiring layer 622: Second wiring layer 623: Third wiring layer 624: Fourth wiring layer 625: Fifth wiring layer 63: Metal layer 64: Shell 641: Final surface 68: First adhesive layer 69: Second adhesive layer 70: Bonding material 71: First surface 72: Second surface 721: Peripheral end 73: End surface 80: Cooler 81: Housing 81A: Mounting surface 811: Hollow section 811A: Severely narrowed section 812: Inlet 813: Outlet 82: Heat dissipation component 83: Base section 83A: Mounting surface 83B: Rear surface 84: Radiating section z: First direction x: Second direction y: Third direction QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] WO 2017 / 094370

[0004]

Claims

[1] Cooling structure for a semiconductor device, comprising: a semiconductor device comprising: a base material, a conductive layer bonded to the base material, a semiconductor element located on a side opposite to the base material in a first direction with respect to the conductive layer and bonded to the conductive layer, and a sealing resin covering the conductive layer and the semiconductor element; a cooler; and a bonding material that bonds the cooler and the base material, wherein the bonding material extends outwards from the sealing resin, viewed in the first direction, the bonding material has a first surface and a second surface facing each other in the first direction, the first surface is in contact with the base material, the second surface is in contact with the cooler and an area of the second surface is larger than an area of the first surface. [2] The cooling structure for a semiconductor device according to claim 1, wherein, viewed in the first direction, a part of the first surface overlaps the second surface. [3] Cooling structure for a semiconductor device according to claim 2, wherein the sealing resin has a lower surface facing the radiator in the first direction, and the first surface is in contact with the lower surface. [4] Cooling structure for a semiconductor device according to claim 3, wherein the sealing resin has an upper surface facing a side opposite to a side facing the lower surface in the first direction, and the entire upper surface is exposed to the outside. [5] The cooling structure for a semiconductor device according to claim 4, wherein, as viewed in the first direction, a peripheral end of the second surface includes a cutout which is a convex curve. [6] Cooling structure for a semiconductor device according to claim 5, wherein the bonding material has an end surface facing a direction orthogonal to the first direction and the end surface curves towards an outer side of the bonding material. [7] A cooling structure for a semiconductor device according to claim 6, wherein the semiconductor element is conductively bonded to the conductive layer. [8] The cooling structure for a semiconductor device according to claim 7, wherein a dimension in the first direction of the conductive layer is larger than a dimension in the first direction of the base material. [9] Cooling structure for a semiconductor device according to claim 8, wherein the semiconductor device has a first input terminal and a second input terminal conductive to the conductive layer, each of the first input terminal and the second input terminal has an exposed portion exposed from the sealing resin and viewed in the first direction, the exposed portion is separated from the cooler and the bonding material. [10] Cooling structure for a semiconductor device according to one of claims 1 to 9, wherein the base material comprises an insulating layer, a metal layer laminated on the insulating layer, and a radiating layer opposite the metal layer and laminated on the insulating layer, the conductive layer is bonded to the metal layer and the first surface is in contact with the radiation layer. [11] The cooling structure for a semiconductor device according to claim 10, wherein a dimension of the bonding material in the first direction is smaller than a dimension of the radiating layer in the first direction. [12] Cooling structure for a semiconductor device according to claim 10, wherein the cooler has a housing with which the second surface comes into contact, the housing has a hollow section located inside the housing, and an inlet and an outlet each leading to the hollow section, and viewed in the first direction, the conductive layer overlaps the hollow section. [13] Cooling structure for a semiconductor device according to claim 12, wherein the hollow section extends along a direction orthogonal to the first direction and has a strongly narrowed section with a smallest cross-sectional area in a cutout from the inlet to the outlet and viewed in the first direction, the conductive layer overlaps the strongly narrowed section. [14] Cooling structure for a semiconductor device according to claim 13, wherein the cooler is housed in the highly constricted section and has a heat dissipation component connected to the housing and viewed from the first direction, the conductive layer overlaps the heat dissipation component. [15] Cooling structure for a semiconductor device according to claim 14, wherein the heat dissipation member includes a plurality of fins and each of the plurality of ribs extends in a direction orthogonal to the first direction and along a cutaway from the inlet to the outlet. [16] Cooling structure for a semiconductor device according to claim 10, wherein the cooler has a base portion in contact with the second surface and a radiating portion located opposite the base material with respect to the base portion and projecting from the base portion in the first direction, the radiation section is exposed to the outside and viewed from the first direction, the conductive layer overlaps the radiating section.

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