SEMICONDUCTOR LASER DEVICE

Abstract

A semiconductor laser device includes a base, a semiconductor laser element disposed on the base, a lens configured to adjust a scattering angle of laser light in a third direction perpendicular to the first and second directions, a first support body supporting the lens with respect to the base, and a first connecting member connecting the lens and the first support body. The first support body has a first opening portion open to first and second surfaces. At least a part of an inner opening of the first opening portion on the first surface side overlaps a first end surface of the lens when viewed from the second direction.The first connecting element is continuously arranged in at least a part of a region between the first end surface and the inner opening of the first opening portion and at least a part of a region in the first opening portion.

Description

Technical area

[0001] The present disclosure relates to a semiconductor laser device. State of the art

[0002] A semiconductor laser device including a base, a semiconductor laser element arranged on the base, a lens facing the semiconductor laser element, a support supporting the lens with respect to the base, and a connecting member connecting the lens and the support is known (see, for example, Patent Literature 1). Citation listPatent literature

[0003] Patent Literature 1: Unexamined Japanese Patent Publication No. JP 2014-170888 A Summary of the inventionTechnical problem

[0004] In the semiconductor laser device described above, when a portion of the connecting member located in the region between the end surface of the lens and the support surface of the substrate is thick, there is a concern that the axial deviation of the lens with respect to the semiconductor laser element will increase due to deformation of the portion (e.g., swelling, thermal expansion, and thermal contraction). On the other hand, when the part of the connecting member located in the region between the end surface of the lens and the support surface of the substrate is thin, the circumference of the protrusion of the connecting member increases by this thin thickness, and there is a concern that the axial deviation of the lens with respect to the semiconductor laser element will increase due to deformation of the protruding part of the connecting member.

[0005] An object of the present disclosure is to provide a semiconductor laser device capable of suppressing the axial deviation of a lens with respect to a semiconductor laser element. Solution to the problem

[0006] A semiconductor laser device of one aspect of the present disclosure is [1] “A semiconductor laser device comprising: a base; a semiconductor laser element disposed on the base and having at least one light-emitting point configured to emit laser light;a lens having a light entrance surface facing the at least one light-emitting point in a first direction, a light exit surface located on a side opposite the light entrance surface in the first direction, a first end surface located on one side in a second direction perpendicular to the first direction, and a second end surface located on the other side in the second direction, and configured to adjust a scattering angle of the laser light in a third direction perpendicular to both the first and second directions; a first support body having a first surface located on the side of the first end surface in the second direction and a second surface located on a side opposite the first end surface in the second direction, and supporting the lens with respect to the base;and a first connecting member connecting the lens and the first support body, the first support body having a first opening portion open to the first surface and the second surface, at least a part of an inner opening of the first opening portion on the first surface side overlapping the first end surface when viewed from the second direction, and the first connecting member being continuously disposed in at least a part of a region between the first end surface and the inner opening of the first opening portion and at least a part of a region in the first opening portion.

[0007] In the semiconductor laser device described in [1], the first support body supporting the lens with respect to the base has the first opening portion open to the first surface and the second surface, and at least a part of the inner opening of the first opening portion on the first surface side overlaps the first end surface of the lens when viewed from the second direction. In this state, the first connecting member is continuously disposed in at least a part of the region between the first end surface of the lens and the inner opening of the first opening portion and in at least a part of the region in the first opening portion of the first support body.This makes it possible to thin a portion of the first connecting member located in the region between the first end surface of the lens and the inner opening of the first opening portion, while suppressing protrusion of the first connecting member from the region between the first end surface of the lens and the inner opening of the first opening portion toward the periphery. Therefore, the axial deviation of the lens due to deformation of the first connecting member is suppressed. In addition, since a part of the first connecting member located in the region of the first opening portion of the first support body functions as a core, the connection strength between the lens and the first support body is improved, and the axial deviation of the lens in a direction perpendicular to the second direction is suppressed.As described above, according to the semiconductor laser device described in [1], the axial deviation of the lens with respect to the semiconductor laser element can be suppressed.

[0008] The semiconductor laser device of one aspect of the present disclosure may be [2] "The semiconductor laser device described in [1], in which the first connecting member is continuously arranged in at least a part of a region between the first end surface and the first surface, at least a part of the region between the first end surface and the inner opening of the first opening portion, and at least a part of the region in the first opening portion." According to the semiconductor laser device described in [2], the bonding strength between the lens and the first support body can be further improved while suppressing the axial deviation of the lens in the direction perpendicular to the second direction.

[0009] The semiconductor laser device of one aspect of the present disclosure may be [3] "The semiconductor laser device described in [1] or [2], in which the first opening portion is a through-hole opened to the first surface and the second surface." According to the semiconductor laser device described in [3], since the first connecting member easily remains in a region in the through-hole, the bonding strength between the lens and the first support body can be improved.

[0010] The semiconductor laser device of one aspect of the present disclosure may be [4] "The semiconductor laser device described in [1] or [2], in which the first opening portion is a notch opened to the first surface and the second surface and opened to a third surface connecting the first surface and the second surface." According to the semiconductor laser device described in [4], since the first connecting member easily escapes from the region between the first end surface of the lens and the inner opening of the first opening portion toward the periphery, it is possible to suppress the protrusion of the first connecting member from the region between the first end surface of the lens and the inner opening of the first opening portion toward the notch side.

[0011] The semiconductor laser device of one aspect of the present disclosure may be [5] "The semiconductor laser device described in [4], in which the notch is opened to a region of the third surface located on a side opposite to the semiconductor laser element in the first direction when viewed from the second direction." According to the semiconductor laser device described in [5], even if a portion of the first connecting member located in the region in the notch is deformed, the axial deviation of the lens, particularly in the third direction, is suppressed, so that the lens that adjusts a scattering angle of the laser light in the third direction can function properly.

[0012] The semiconductor laser device of one aspect of the present disclosure may be [6] "The semiconductor laser device described in [4], in which the notch is opened to a region of the third surface located on one side in the third direction when viewed from the second direction." According to the semiconductor laser device described in [6], even if the first connecting member protrudes from the region in the notch to the region on the third surface of the first support body, the first connecting member can be prevented from adhering to the light input surface and the light output surface of the lens.

[0013] The semiconductor laser device of one aspect of the present disclosure may be [7] "The semiconductor laser device described in any one of [1] to [6], in which the first connecting member reaches an outer opening of the first opening portion on the second surface side." According to the semiconductor laser device described in [7], since the portion of the first connecting member located in the region in the first opening portion of the first support body functions as a core, the connection strength between the lens and the first support body can be improved, and the axial deviation of the lens in the direction perpendicular to the second direction can be suppressed.

[0014] The semiconductor laser device of one aspect of the present disclosure may be [8] "The semiconductor laser device described in any one of [1] to [7], in which the first connecting member is continuously disposed in at least a part of the region between the first end surface and the inner opening of the first opening portion, at least a part of the region in the first opening portion, and at least a part of a region on the second surface." According to the semiconductor laser device described in [8], since a portion of the first connecting member disposed in the region on the second surface of the first support body functions as an anchor (stopper), the connection strength between the lens and the first support body can be improved, and the axial deviation of the lens in the direction perpendicular to the second direction can be suppressed.

[0015] The semiconductor laser device of one aspect of the present disclosure may be [9] "The semiconductor laser device described in [8], wherein, in the first connecting member, a portion located in at least a part of the region between the first end surface and the inner opening of the first opening portion is thinner than a portion located in at least a part of the region on the second surface." According to the semiconductor laser device described in [9], since the thickness of the portion located in the region between the first end surface of the lens and the inner opening of the first opening portion hardly varies, the axial deviation of the lens due to the deformation of the first connecting member can be suppressed.Furthermore, since the portion of the first connecting member located in the region of the second surface of the first support body functions as an anchor, the connecting strength between the lens and the first support body can be improved and the axial deviation of the lens in the direction perpendicular to the second direction can be suppressed.

[0016] The semiconductor laser device of one aspect of the present disclosure may be

[10] "The semiconductor laser device described in any one of [1] to [9], in which the entire inner opening of the first opening portion overlaps the first end surface when viewed from the second direction." According to the semiconductor laser device described in

[10] , since the first connecting element easily protrudes from the region between the first end surface of the lens and the inner opening of the first opening portion toward the edge, it is possible to suppress the protrusion of the first connecting element from the region between the first end surface of the lens and the inner opening of the first opening portion to the region in the first opening portion.

[0017] The semiconductor laser device of one aspect of the present disclosure may be

[11] "The semiconductor laser device described in any one of [1] to

[10] , wherein the first support body has optical transparency." According to the semiconductor laser device described in

[11] , it is possible to confirm the state of the part of the first connecting member located in the region between the first end surface of the lens and the inner opening of the first opening portion, and the part of the first connecting member located in the region inside the first opening portion of the first support body.

[0018] The semiconductor laser device of one aspect of the present disclosure may be

[12] "The semiconductor laser device described in any one of [1] to

[11] , wherein a thickness of the first support body in the second direction is 2 mm or less." According to the semiconductor laser device described in

[12] , it is possible to reliably dispose the first connecting member in the region in the first opening portion of the first support body while reducing the amount of the first connecting member.

[0019] The semiconductor laser device of one aspect of the present disclosure may be

[13] "The semiconductor laser device described in any one of [1] to

[12] , wherein at least a part of the light-exiting surface is offset from the first support body when viewed from the second direction." According to the semiconductor laser device described in

[13] , the first bonding member can be prevented from adhering to the light-exiting surface of the lens.

[0020] The semiconductor laser device of one aspect of the present disclosure may be

[14] "The semiconductor laser device described in any one of [1] to

[13] , wherein a width of the inner opening of the first opening portion in the first direction is equal to or larger than a width of the inner opening of the first opening portion in the third direction." According to the semiconductor laser device described in

[14] , even if a portion of the first connecting member located in a region in the first opening portion is deformed, the axial deviation of the lens, particularly in the third direction, is suppressed, so that the lens that adjusts a scattering angle of the laser light in the third direction can function properly.

[0021] The semiconductor laser device of one aspect of the present disclosure may be

[15] “The semiconductor laser device described in any one of [1] to

[14] , further including a second connecting member connecting the base and the first support body formed separately from the base, wherein the first support body has a second opening portion opened to the first surface and the second surface, at least a part of an inner opening of the second opening portion on the first surface side overlaps a side surface of the base when viewed from the second direction, and the second connecting member is continuously arranged in at least a part of a region between the side surface and the inner opening of the second opening portion and at least a part of a region in the second opening portion.” According to the semiconductor laser device described in

[15] , the structure (e.g.The shape and material of both the base and the first support body can be configured accordingly. Furthermore, since the second connecting element is arranged in the region of the second opening portion of the first support body, the connection strength between the base and the first support body can also be improved.

[0022] The semiconductor laser device of one aspect of the present disclosure may be

[16] "The semiconductor laser device described in

[15] , in which the second connecting member is continuously disposed in at least a part of a region between the side surface and the first surface, at least a part of the region between the side surface and the inner opening of the second opening portion, and at least a part of the region in the second opening portion." According to the semiconductor laser device described in

[16] , the bonding strength between the base and the first supporting body can be further improved.

[0023] The semiconductor laser device of one aspect of the present disclosure may be

[17] "The semiconductor laser device described in

[15] or

[16] , wherein, in the first surface, an area of ​​a region overlapping the side surface when viewed from the second direction is larger than an area of ​​a region overlapping the first end surface when viewed from the second direction, and an area of ​​the inner opening of the second opening portion is larger than an area of ​​the inner opening of the first opening portion." According to the semiconductor laser device described in

[17] , the stability of the support for the first support body and the lens can be improved.Moreover, for example, in a case where the base and the first support body are joined after the lens and the first support body are joined, even if the amount of the second connecting member is increased so that the first support body can be easily moved to align the lens with respect to the semiconductor laser element, it is possible to suppress protrusion of the second connecting member from the region overlapping the side surface when viewed from the second direction of the first surface of the first support body.

[0024] The semiconductor laser device of one aspect of the present disclosure may be

[18] “The semiconductor laser device described in any one of [1] to

[17] , further including: a second support body having a fourth surface located on the second end surface side in the second direction and a fifth surface located on a side opposite to the second end surface in the second direction, and supporting the lens with respect to the base;and a third connecting member connecting the lens and the second support body, the second support body having a third opening open to the fourth surface and the fifth surface, at least a part of an inner opening of the third opening on the fourth surface side overlapping the second end surface when viewed from the second direction, and the third connecting member being continuously disposed in at least a part of a region between the second end surface and the inner opening of the third opening and at least a part of a region in the third opening. According to the semiconductor laser device described in

[18] , the stability of the support of the lens can be further improved, and the axial deviation of the lens in the direction perpendicular to the second direction can be more reliably suppressed.

[0025] The semiconductor laser device of one aspect of the present disclosure may be

[19] "The semiconductor laser device described in

[18] , in which the third connecting member is continuously disposed in at least a part of a region between the second end surface and the fourth surface, at least a part of the region between the second end surface and the inner opening of the third opening, and at least a part of the region in the third opening." According to the semiconductor laser device described in

[19] , the bonding strength between the lens and the second support body can be further improved while suppressing the axial deviation of the lens in a direction perpendicular to the second direction.

[0026] The semiconductor laser device of one aspect of the present disclosure may be

[20] "The semiconductor laser device described in any one of [1] to

[19] , wherein the semiconductor laser element has a plurality of light-emitting points arranged in the second direction, the lens extends in the second direction, and the light entrance surface opposes the plurality of light-emitting points in the first direction." According to the semiconductor laser device described in

[20] , it is possible to suppress the variation of the scattering angle of the laser light in the third direction for the laser light emitted from each of the plurality of light-emitting points. Advantageous effects of the invention

[0027] According to the present disclosure, it is possible to provide a semiconductor laser device capable of suppressing the axial deviation of a lens with respect to a semiconductor laser element. Short description of the drawings Fig. 1 is a plan view of a portion of a semiconductor laser of one embodiment. Fig. 2 is a side view of a part of the Fig. 1 shown semiconductor laser device. Fig. 3 is a perspective view of a Fig. 1 shown semiconductor laser element. Fig. 4 is a side view of the Fig. 1 shown first carrier body. Fig. 5 is a cross-sectional view of the first support body along the Fig. Line VV shown in Figure 4. Fig. 6 is a side view of a second in Fig. 1 shown carrier body. Fig. 7 is a cross-sectional view of the second support body along the Fig. 6 illustrated line VII-VII. Fig. 8 is a side view of the first support body of a modification. Fig. 9 is a side view of the first support body of a modification. Description of embodiments

[0028] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. Note that in the drawings, like or corresponding parts are designated by the same reference numerals, and redundant descriptions are omitted.

[0029] As in the Fig. 1 and Fig. As illustrated in Figure 2, a semiconductor laser device 1 includes a heat sink 2, a base 3, a semiconductor laser element 4, a lens 5, a first support body 6, and a second support body 7. The lens 5 and the first support body 6 are connected to each other by the first connecting member 8. The sub-mount 3 and the first support body 6 are connected to each other by a second connecting member 9. The lens 5 and the second support body 7 are connected to each other by a third connecting member 11. The sub-mount 3 and the second support body 7 are connected to each other by a fourth connecting member 12. The first connecting member 8, the second connecting member 9, the third connecting member 11, and the fourth connecting member 12 are, for example, photocurable polymers. As the photocurable polymer, an ultraviolet light-curable polymer, a visible light-curable polymer, or the like can be used.It should be noted that the first connecting element 8, the second connecting element 9, the third connecting element 11 and the fourth connecting element 12 may be thermosetting polymers.

[0030] As in Fig. As illustrated in Fig. 3, the semiconductor laser element 4 includes a semiconductor laminate 41 and an anode and a cathode (not illustrated). The semiconductor laminate 41 is formed in a rectangular plate shape in which a Z direction is a thickness direction, an X direction is a short side direction, and a Y direction is a long side direction, for example, by laminating a plurality of layers (such as an active layer and a cladding layer on both sides of the active layer) made of a compound semiconductor. The compound semiconductor is, for example, GaAs, AlGaAs, GaN, AlGaN, or a solid solution of any of these elements and In. The semiconductor laser element 4 has a plurality of light-emitting points 4a that emit laser light. The plurality of light-emitting points 4a are arranged in a line in the Y direction on a light-emitting surface 41a of the semiconductor laminate 41 perpendicular to the X direction.As an example, the thickness of the semiconductor laser element 4 in the Z direction is about 0.15 mm, the width of the semiconductor laser element 4 in the X direction is about 2 mm, and the width of the semiconductor laser element 4 in the Y direction is about 10 mm.

[0031] In the semiconductor laser element 4 configured as described above, laser light is emitted from each light-emitting point 4a with the Z direction as a fast axis direction and the Y direction as a slow axis direction. Note that the power supply to the anode and cathode (not shown) of the semiconductor laser element 4 can be realized by a known configuration.

[0032] As in the Fig. 1 and Fig. 2, the semiconductor laser element 4 is arranged on the heat sink 2 with the sub-mount 3 interposed therebetween. That is, the semiconductor laser element 4 is arranged on the sub-mount 3. In the present embodiment, the semiconductor laser element 4 is fixed to a mounting surface 31 of the sub-mount 3 perpendicular to the Z direction. The heat sink 2 is formed in a block shape, for example, from CuW. The sub-mount 3 is formed of, for example, Al2O3, SiC, or CuW in the shape of a rectangular plate in which the Z direction is a thickness direction, the X direction is a short side direction, and the Y direction is a long side direction. For example, the thickness of the sub-mount 3 in the Z direction is about 0.6 mm, the width of the sub-mount 3 in the X direction is about 2 mm, and the width of the sub-mount 3 in the Y direction is about 10 mm.In the present embodiment, an outer edge of the semiconductor laser element 4 coincides with an outer edge of the sub-mount 3 when viewed from the Z direction.

[0033] The lens 5 extends in the Y direction and adjusts a scattering angle of the laser light L at least in the Z direction (a third direction perpendicular to both the first and second directions), the laser light L emitted from each light-emitting point 4a. The lens 5 has a light entrance surface 51, a light exit surface 52, a first end surface 53a, and a second end surface 53b. The light entrance surface 51 faces the plurality of light exit points 4a in the X direction (first direction). A gap is formed between the light entrance surface 51 of the lens 5 and the light exit surface 41a of the semiconductor laser element 4. The distance between the light entrance surface 51 of the lens 5 and the light exit surface 41a of the semiconductor laser element 4 is, for example, about 0.1 mm. The light exit surface 52 is located on a side opposite the light entry surface 51 in the X direction.The first end surface 53a is located on one side in the Y direction (the second direction perpendicular to the first direction). The second end surface 53b is located on the other side in the Y direction.

[0034] The lens 5 is, for example, a fast-axis collimating lens made of high-refractive-index glass. The light entrance surface 51 is, for example, a flat surface perpendicular to the X direction, and the light exit surface 52 is a part of a cylindrical surface with a center line parallel to the Y direction. For example, the width of the lens 5 in the Z direction is about 1 mm, the width of the lens 5 in the X direction is about 1 mm, and the width of the lens 5 in the Y direction is about 10 mm. In the present embodiment, the lens 5 adjusts a scattering angle of the laser light L in the Z direction and radiates laser light collimated in the Z direction. Note that the lens 5 may, for example, have a cylindrical shape.In this case, too, a region of the outer peripheral surface of the cylinder on the X-direction side of the semiconductor laser element 4 is the light entrance surface 51, and a region of the outer peripheral surface of the cylinder on a side opposite to the semiconductor laser element 4 in the X-direction is the light exit surface 52. Further, in this case, the light entrance surface 51 and the light exit surface 52 may be continuous (that is, they may be formed as one surface smoothly connected so as not to have a corner portion).

[0035] The first support body 6 and the second support body 7 are formed separately from the sub-mount 3 and support the lens 5 with respect to the sub-mount 3. The first support body 6 is connected to the lens 5 by the first connecting element 8 at a portion at a distal end 6a and is connected to the sub-mount 3 by the second connecting element 9 at a portion at a proximal end 6b. The second support body 7 is connected to the lens 5 by the third connecting element 11 at a portion at a distal end 7a and is connected to the sub-mount 3 by the fourth connecting element 12 at a portion at a proximal end 7b. At least a part of the light exit surface 52 of the lens 5 is offset in the Y direction as viewed from the first support body 6 and the second support body 7.Specifically, at least a part of the light exit surface 52 of the lens 5 protrudes from the distal end 6a of the first support body 6 and the distal end 7a of the second support body 7 to a side opposite to the semiconductor laser element 4 in the X direction when viewed from the Y direction.

[0036] As in Fig. 4 and Fig. 5, the first support body 6 has a first surface 61, a second surface 62, and a third surface 63. The first surface 61 is located on one side of the first end surface 53a of the lens 5 and a first side surface (side surface) 32a of the sub-mount 3 in the Y direction. The second surface 62 is located on a side opposite the first end surface 53a of the lens 5 and the first side surface 32a of the sub-mount 3 in the Y direction. The third surface 63 is a connecting surface between the first surface 61 and the second surface 62. The thickness of the first support body 6 (i.e., the distance between the first surface 61 and the second surface 62) in the Y direction is 2 mm or less. The first support body 6 is optically transparent (e.g., transmitting ultraviolet light and / or visible light).The first support body 6 is made of, for example, BK7, synthetic quartz, or borosilicate glass in a rectangular parallelepiped shape. For example, the width of the first support body 6 in the Z direction is about 1 mm, the width of the first support body 6 in the X direction is about 6 mm, and the width of the first support body 6 in the Y direction is about 1 mm. Note that from the viewpoint of ensuring the strength of the first support body 6 and securing a space in which the first connecting member 8 is arranged in a first opening portion 64 described later, the thickness of the first support body 6 is preferably 0.5 mm or more, and more preferably 1 mm or more.

[0037] The first support body 6 has a first opening portion 64 and a second opening portion 65. The first opening portion 64 and the second opening portion 65 are through holes open to the first surface 61 and the second surface 62, respectively. The through hole has a cylindrical shape with a center line parallel to, for example, the Y direction. An inner opening 64a of the first opening portion 64 on the first surface 61 side is included in the first end surface 53a of the lens 5 when viewed from the Y direction. That is, when viewed in the Y direction, the entire inner opening 64a of the first opening portion 64 overlaps the first end surface 53a of the lens 5. The width of the inner opening 64a in the X direction is equal to the width of the inner opening 64a in the Z direction. The inner opening 64a of the first opening portion 64 has, for example, a circular shape with a diameter of about 0.2 mm.An outer opening 64b of the first opening portion 64 has, for example, a circular shape with a diameter of about 0.2 mm. An inner opening 65a of the second opening portion 65 on the first surface 61 side is included in the first side surface 32a of the sub-mount 3 when viewed in the Y direction. That is, when viewed from the Y direction, the entire inner opening 65a of the second opening portion 65 overlaps the first side surface 32a of the sub-mount 3. The width of the inner opening 65a in the X direction is larger than the width of the inner opening 65a in the Z direction. Each of the inner opening 65a and an outer opening 65b of the second opening portion 65 has, for example, an elliptical shape with a width of about 0.4 mm in the X direction and a width of about 0.2 mm in the Z direction.The second opening portion 65 is located on the side of the sub-mount 3 with respect to the lens 5 in a position corresponding to half the width of the first support body 6 in the X direction.

[0038] The first connecting member 8 is continuously arranged in at least a part of a region R11, at least a part of a region R12, and at least a part of a region R13. The region R11 is a region between the first end surface 53a of the lens 5 and a plane including the first surface 61 of the first support body 6. The region R12 is a region in the first opening portion 64 of the first support body 6. The region R13 is a region in a plane including the second surface 62 of the first support body 6. That is, the first connecting member 8 includes a portion 81 arranged in the region R11, a portion 82 arranged in the region R12, and a portion 83 arranged in the region R13, and these portions 81, 82, and 83 are integrally formed. In the present embodiment, the first connecting member 8 is arranged in the entire region R12 in the first opening portion 64.

[0039] In the present embodiment, the region R11 includes a region R11a and a region R11b. The region R11a is a region between the first end surface 53a of the lens 5 and the inner opening 64a of the first opening portion 64. In other words, the region R11a is a region overlapping the inner opening 64a of the first opening portion 64 when viewed from the Y direction in the region R11. The region R11b is a region between the first end surface 53a of the lens 5 and the first surface 61 of the first support body 6. In other words, the region R11b is an annular region surrounding the inner opening 64a of the first opening portion 64 when viewed from the Y direction in the region R11. The portion 81 of the first connecting element 8 includes a portion 81a located in the region R11a and an annular portion 81b located in the region R11b. The region R13 includes a region R13a and a region R13b.The region R13a is a region outside the outer opening 64b of the first opening portion 64 (on a side opposite the first end surface 53a in the Y direction). In other words, the region R13a is a region overlapping the outer opening 64b of the first opening portion 64 when viewed from the Y direction in the region R13. The region R13b is a region on the second surface 62 of the first support body 6. In other words, the region R13b is an annular region surrounding the outer opening 64b of the first opening portion 64 when viewed from the Y direction in the region R13. The portion 83 of the first connecting member 8 includes a portion 83a located in the region R13a and an annular portion 83b located in the region R13b. 81a, 81b, 82, 83a and 83b of the first connecting element 8 are formed in one piece.For example, the width of the portion 81b in the radial direction (the distance between the inner edge of the portion 81b and the outer edge of the portion 81b as seen in the Y direction) is about 0.1 to 0.2 mm.

[0040] In the first connecting element 8, the portion 81 (i.e., portions 81a and 81b) located in the region R11 between the first end surface 53a of the lens 5 and the plane with the first surface 61 of the first support body 6 is thinner than the portion 83 (i.e., portions 83a and 83b) located in the region R13 on the plane with the second surface 62 of the first support body 6. That is, the maximum value of the thickness of the portion 81 in the Y direction (i.e., the distance between the first end surface 53a of the lens 5 and the first surface 61 of the first support body 6) is smaller than the maximum value of the thickness of the portion 83 in the Y direction. For example, the maximum value of the thickness of the portion 81 in the Y direction is about 0.1 mm, and the maximum value of the thickness of the portion 83 in the Y direction is about 0.2 mm.

[0041] The second connecting member 9 is continuously arranged in at least a part of a region R21, at least a part of a region R22, and at least a part of a region R23. The region R21 is a region between the first side surface 32a of the sub-mount 3 and a plane including the first surface 61 of the first support body 6. The region R22 is a region in the second opening portion 65 of the first support body 6. The region R23 is a region in a plane including the second surface 62 of the first support body 6. That is, the second connecting member 9 includes a portion 91 arranged in the region R21, a portion 92 arranged in the region R22, and a portion 93 arranged in the region R23, and these portions 91, 92, and 93 are integrally formed.In the present embodiment, the second connecting member 9 is arranged in the entire region R22 in the second opening portion 65.

[0042] In the present embodiment, the region R21 includes a region R21a and a region R21b. The region R21a is a region between the first side surface 32a of the sub-mount 3 and the inner opening 65a of the second opening portion 65. In other words, the region R21a is a region overlapping the inner opening 65a of the second opening portion 65 when viewed from the Y direction in the region R21. The region R21b is a region between the first side surface 32a of the sub-mount 3 and the first surface 61 of the first support body 6. In other words, the region R21b is an annular region surrounding the inner opening 65a of the second opening portion 65 when viewed from the Y direction in the region R21. The portion 91 of the second connecting element 9 includes a portion 91a arranged in the region R21a and an annular portion 91b arranged in the region R21b.The region R23 includes a region R23a and a region R23b. The region R23a is a region outside the outer opening 65b of the second opening portion 65 (on a side opposite the first side surface 32a in the Y direction). In other words, the region R23a is a region overlapping the outer opening 65b of the second opening portion 65 when viewed from the Y direction in the region R23. The region R23b is a region on the second surface 62 of the first support body 6. In other words, the region R23b is an annular region surrounding the outer opening 65b of the second opening portion 65 when viewed from the Y direction in the region R23. The portion 93 of the second connecting member 9 includes a portion 93a located in the region R23a and an annular portion 93b located in the region R23b. 91a, 91b, 92, 93a and 93b of the second connecting element 9 are formed in one piece.For example, the width of the portion 91b in the radial direction (the distance between the inner edge of the portion 91b and the outer edge of the portion 91b as seen in the Y direction) is about 0.1 to 0.2 mm.

[0043] In the second connecting element 9, the portion 91 (i.e., portions 91a and 91b) located in the region R21 between the first side surface 32a of the sub-mount 3 and the plane with the first surface 61 of the first support body 6 is thinner than the portion 93 (i.e., portions 93a and 93b) located in the region R23 on the plane with the second surface 62 of the first support body 6. That is, the maximum value of the thickness of the portion 91 in the Y direction (i.e., the distance between the first side surface 32a of the sub-mount 3 and the first surface 61 of the first support body 6) is smaller than the maximum value of the thickness of the portion 93 in the Y direction.

[0044] In the first surface 61 of the first support body 6, the area of ​​a region 61b overlapping the first side surface 32a of the sub-mount 3, viewed in the Y direction, is larger than the area of ​​a region 61a overlapping the first end surface 53a of the lens 5, viewed in the Y direction. The area of ​​the inner opening 65a of the second opening portion 65 is larger than the area of ​​the inner opening 64a of the first opening portion 64.

[0045] As in Fig. 6 and Fig. 7, the second support body 7 has a fourth surface 71, a fifth surface 72, and a sixth surface 73. The fourth surface 71 is located on one side of the second end surface 53b of the lens 5 and a second side surface 32b of the sub-mount 3 in the Y direction. The fifth surface 72 is located on a side opposite the second end surface 53b of the lens 5 and the second side surface 32b of the sub-mount 3 in the Y direction. The sixth surface 73 is a connecting surface between the fourth surface 71 and the fifth surface 72. The thickness of the second support body 7 (i.e., the distance between the fourth surface 71 and the fifth surface 72) in the Y direction is 2 mm or less. The second support body 7 is optically transparent (e.g., transmissive to ultraviolet light and / or visible light).The second support body 7 is made of, for example, BK7, synthetic quartz, or borosilicate glass in a rectangular parallelepiped shape. For example, the width of the second support body 7 in the Z direction is about 1 mm, the width of the second support body 7 in the X direction is about 6 mm, and the width of the second support body 7 in the Y direction is about 1 mm. Note that from the viewpoint of ensuring the strength of the second support body 7 and securing a space in which the third connecting member 11 is arranged in a third opening 74 described later, the thickness of the second support body 7 is preferably 0.5 mm or more, and more preferably 1 mm or more.

[0046] The second support body 7 has a third opening 74 and a fourth opening 75. The third opening 74 and the fourth opening 75 are through holes open to the fourth surface 71 and the fifth surface 72, respectively. The through hole has a cylindrical shape with a center line parallel to the Y direction, for example. An inner opening 74a of the third opening 74 on the fourth surface 71 side is included in the second end surface 53b of the lens 5 when viewed in the Y direction. That is, when viewed in the Y direction, the entire inner opening 74a of the third opening 74 overlaps the second end surface 53b of the lens 5. The width of the inner opening 74a in the X direction is equal to the width of the inner opening 74a in the Z direction. The inner opening 74a of the third opening 74 has, for example, a circular shape with a diameter of about 0.2 mm.An outer opening 74b of the third opening 74 has, for example, a circular shape with a diameter of about 0.2 mm. An inner opening 75a of the fourth opening 75 on the fourth surface 71 side is included in the second side surface 32b of the sub-mount 3 when viewed from the Y direction. That is, as viewed in the Y direction, the entire inner opening 75a of the fourth opening 75 overlaps the second side surface 32b of the sub-beam 3. The width of the inner opening 75a in the X direction is larger than the width of the inner opening 75a in the Z direction. Each of the inner opening 75a and an outer opening 75b of the fourth opening 75 has, for example, an elliptical shape with a width of about 0.4 mm in the X direction and a width of about 0.2 mm in the Z direction.The fourth opening 75 is located on the side of the sub-mount 3 with respect to the lens 5 in a position corresponding to half the width of the second support body 7 in the X direction.

[0047] The third connecting element 11 is continuously arranged in at least a part of a region R31, at least a part of a region R32, and at least a part of a region R33. The region R31 is a region between the second end surface 53b of the lens 5 and a plane including the fourth surface 71 of the second support body 7. The region R32 is a region in the third opening 74 of the second support body 7. The region R33 is a region in a plane including the fifth surface 72 of the second support body 7. That is, the third connecting element 11 includes a portion 111 arranged in the region R31, a portion 112 arranged in the region R32, and a portion 113 arranged in the region R33, and these portions 111, 112, and 113 are integrally formed. In the present embodiment, the third connecting element 11 is arranged in the entire region R32 in the third opening 74.

[0048] In the present embodiment, the region R31 includes a region R31a and a region R31b. The region R31a is a region between the second end surface 53b of the lens 5 and the inner opening 74a of the third opening 74. In other words, the region R31a is a region that overlaps the inner opening 74a of the third opening 74 when viewed from the Y direction in the region R31. The region R31b is a region between the second end surface 53b of the lens 5 and the fourth surface 71 of the second support body 7. In other words, the region R31b is an annular region surrounding the inner opening 74a of the third opening 74 when viewed from the Y direction in the region R31. The portion 111 of the third connecting element 11 includes a portion 111a located in the region R31a and an annular portion 111b located in the region R31b. The region R33 includes a region R33a and a region R33b.The region R33a is a region outside the outer opening 74b of the third opening 74 (on a side opposite the second end surface 53b in the Y direction). In other words, the region R33a is a region that overlaps the outer opening 74b of the third opening 74 when viewed from the Y direction in the region R33. The region R33b is a region on the fifth surface 72 of the second support body 7. In other words, the region R33b is an annular region surrounding the outer opening 74b of the third opening 74 when viewed from the Y direction in the region R33. The portion 113 of the third connecting member 11 includes a portion 113a located in the region R33a and an annular portion 113b located in the region R33b. 111a, 111b, 112, 113a and 113b of the third connecting element 11 are integrally formed.For example, the width of the portion 111b in the radial direction (the distance between the inner edge of the portion 111b and the outer edge of the portion 111b as seen in the Y direction) is about 0.1 to 0.2 mm.

[0049] In the third connecting element 11, the portion 111 (i.e., portions 111a and 111b) located in the region R31 between the second end surface 53b of the lens 5 and the plane with the fourth surface 71 of the second support body 7 is thinner than the portion 113 (i.e., portions 113a and 113b) located in the region R33 on the plane with the fifth surface 72 of the second support body 7. That is, the maximum value of the thickness of the portion 111 in the Y direction (i.e., the distance between the second end surface 53b of the lens 5 and the fourth surface 71 of the second support body 7) is smaller than the maximum value of the thickness of the portion 113 in the Y direction. For example, the maximum value of the thickness of the portion 111 in the Y direction is about 0.1 mm, and the maximum value of the thickness of the portion 113 in the Y direction is about 0.2 mm.

[0050] The fourth connecting member 12 is continuously arranged in at least a part of a region R41, at least a part of a region R42, and at least a part of a region R43. The region R41 is a region between the second side surface 32b of the sub-mount 3 and a plane including the fourth surface 71 of the second support body 7. The region R42 is a region in the fourth opening 75 of the second support body 7. The region R43 is a region in a plane including the fifth surface 72 of the second support body 7. That is, the fourth connecting member 12 includes a portion 121 arranged in the region R41, a portion 122 arranged in the region R42, and a portion 123 arranged in the region R43, and these portions 121, 122, and 123 are integrally formed. In the present embodiment, the fourth connecting element 12 is arranged in the entire region R42 in the fourth opening 75.

[0051] In the present embodiment, the region R41 includes a region R41a and a region R41b. The region R41a is a region between the second side surface 32b of the sub-mount 3 and the inner opening 75a of the fourth opening 75. In other words, the region R41a is a region overlapping the inner opening 75a of the fourth opening 75 when viewed from the Y direction in the region R41. The region R41b is a region between the second side surface 32b of the sub-mount 3 and the fourth surface 71 of the second support body 7. In other words, the region R41b is an annular region surrounding the inner opening 75a of the fourth opening 75 when viewed from the Y direction in the region R41. The portion 121 of the fourth connecting element 12 includes a portion 121a disposed in the region R41a and an annular portion 121b disposed in the region R41b.The region R43 includes a region R43a and a region R43b. The region R43a is a region outside the outer opening 75b of the fourth opening 75 (on a side opposite the second side surface 32b in the Y direction). In other words, the region R43a is a region overlapping the outer opening 75b of the fourth opening 75 when viewed from the Y direction in the region R43. The region R43b is a region on the fifth surface 72 of the second support body 7. In other words, the region R43b is an annular region surrounding the outer opening 75b of the fourth opening 75 when viewed from the Y direction in the region R43. The portion 123 of the fourth connecting element 12 includes a portion 123a located in the region R43a and an annular portion 123b located in the region R43b. 121a, 121b, 122, 123a and 123b of the fourth connecting element 12 are integrally formed.For example, the width of the portion 121b in the radial direction (the distance between the inner edge of the portion 121b and the outer edge of the portion 121b as seen in the Y direction) is about 0.1 to 0.2 mm.

[0052] In the fourth connecting member 12, the portion 121 (i.e., portions 121a and 121b) located in the region R41 between the second side surface 32b of the sub-mount 3 and the plane including the fourth surface 71 of the second support body 7 is thinner than the portion 123 (i.e., portions 123a and 123b) located in the region R43 on the plane including the fifth surface 72 of the second support body 7. That is, the maximum value of the thickness of the portion 121 in the Y direction (i.e., the distance between the second side surface 32b of the sub-mount 3 and the fourth surface 71 of the second support body 7) is smaller than the maximum value of the thickness of the portion 123 in the Y direction.

[0053] In the fourth surface 71 of the second support body 7, the area of ​​a region 71b that overlaps the second side surface 32b of the sub-mount 3 in the Y direction is larger than the area of ​​a region 71a that overlaps the second end surface 53b of the lens 5 in the Y direction. The area of ​​the inner opening 75a of the fourth opening 75 is larger than the area of ​​the inner opening 74a of the third opening 74.

[0054] As described above, in the semiconductor laser device 1, the first support body 6, which supports the lens 5 with respect to the sub-mount 3, has the first opening portion 64 open to the first surface 61 and the second surface 62, and the entire inner opening 64a of the first opening portion 64 overlaps the first end surface 53a of the lens 5 when viewed from the Y direction. In this state, the first connecting member 8 is continuously disposed in at least a part of the region R11a between the first end surface 53a of the lens 5 and the inner opening 64a of the first opening portion 64, at least a part of the groove R12 in the first opening portion 64 of the first support body 6, and at least a part of the groove R13b on the second surface 62 of the first support body 6.Thereby, it is possible to thin the portion 81a located in the region R11a between the first end surface 53a of the lens 5 and the inner opening 64a of the first opening portion 64 of the first connecting member 8, while suppressing the protrusion of the first connecting member 8 from the region R11a between the first end surface 53a of the lens 5 and the inner opening 64a of the first opening portion 64 toward the periphery (that is, while suppressing the amount of the portion 81b located in the region R11b between the first end surface 53a of the lens 5 and the first surface 61 of the first support body 6). Therefore, the axial deviation of the lens 5 due to the deformation of the first connecting member 8 (e.g., swelling, thermal expansion, and thermal contraction) is suppressed.In addition, since the portion 82 of the first connecting member 8 located in the region R12 in the first opening portion 64 of the first support body 6 functions as a core and the portion 83b of the first connecting member 8 located in the region R13b on the second surface 62 of the first support body 6 functions as an anchor (stopper), the connection strength between the lens 5 and the first support body 6 is improved and the axial deviation of the lens 5 in a direction perpendicular to the Y direction is suppressed.

[0055] Similarly, in the semiconductor laser device 1, the second support body 7, which supports the lens 5 with respect to the sub-mount 3, has the third opening 74 open to the fourth surface 71 and the fifth surface 72, and the entire inner opening 74a of the third opening 74 overlaps the second end surface 53b of the lens 5 when viewed from the Y direction. In this state, the third connecting member 11 is continuously disposed in at least a part of the region R31a between the second end surface 53b of the lens 5 and the inner opening 74a of the third opening 74, at least a part of the region R32 in the third opening 74 of the second support body 7, and at least a part of the region R33b on the fifth surface 72 of the second support body 7.Thereby, it is possible to thin the portion 111a of the third connecting member 11 located in the region R31a between the second end surface 53b of the lens 5 and the inner opening 74a of the third opening 74, while suppressing the protrusion of the third connecting member 11 from the region R31a between the second end surface 53b of the lens 5 and the inner opening 74a of the third opening 74 toward the periphery (that is, while suppressing the amount of the portion 111b located in the region R31b between the second end surface 53b of the lens 5 and the fourth surface 71 of the second support body 7). Therefore, the axial deviation of the lens 5 due to the deformation of the third connecting member 11 is suppressed.Since the portion 112 of the third connecting member 11 located in the region R32 in the third opening 74 of the second support body 7 functions as a core and the portion 113b of the third connecting member 11 located in the region R33b on the fifth surface 72 of the second support body 7 functions as an anchor, the connection strength between the lens 5 and the second support body 7 is improved and the axial deviation of the lens 5 in the direction perpendicular to the Y direction is suppressed.

[0056] As described above, in the semiconductor laser device 1, the axial deviation of the lens 5 with respect to the semiconductor laser element 4 can be suppressed. Specifically, in the semiconductor laser device 1, since the lens 5 adjusts the propagation angle of the laser light L in the Z direction with respect to the laser light L emitted from each light-emitting point 4a, the tolerance of the axial deviation in the X direction is stricter than the tolerance of the axial deviation in the Y direction, and the tolerance of the axial deviation in the Z direction is stricter than the tolerance of the axial deviation in the X direction. Therefore, the structure described above, which can suppress the axial deviation of the lens 5 in the direction perpendicular to the Y direction, is extremely effective.

[0057] Furthermore, in the semiconductor laser device 1, the first opening portion 64 is a through-hole open to the first surface 61 and the second surface 62. Since the first connecting member 8 remains slightly in the region R12 in the through-hole, the connection strength between the lens 5 and the first support body 6 can be improved. Furthermore, the formation of an air reservoir between the first support body 6 and the first connecting member 8 can be suppressed, thereby suppressing the occurrence of axial deviation of the lens 5 due to thermal expansion and thermal contraction of the air in the air reservoir.

[0058] Similarly, in the semiconductor laser device 1, the third opening 74 is a through-hole open to the fourth surface 71 and the fifth surface 72. Since the third connecting member 11 slightly remains in the region R32 in the through-hole, the connection strength between the lens 5 and the second support body 7 can be improved. Furthermore, the formation of an air reservoir between the second support body 7 and the third connecting member 11 can be suppressed, thereby suppressing the occurrence of axial deviation of the lens 5 due to thermal expansion and thermal contraction of the air in the air reservoir.

[0059] Furthermore, in the semiconductor laser device 1, in the first connecting member 8, the portion 81 located in at least a part of the region R11 between the first end surface 53a of the lens 5 and the plane with the first surface 61 of the first support body 6 is thinner than the portion 83 located in at least a part of the region R13 in the plane with the second surface 62 of the first support body 6. Since the thickness of the portion 81 located in the region R11 between the first end surface 53a of the lens 5 and the plane with the first surface 61 of the first support body 6 of the first connecting member 8 hardly changes, the axial deviation of the lens 5 due to the deformation of the first connecting member 8 can be suppressed.In addition, since the portion 83b located in the region R13b on the second surface 62 of the first support body 6 of the first connecting member 8 functions as an anchor, the connection strength between the lens 5 and the first support body 6 can be improved and the axial deviation of the lens 5 in the direction perpendicular to the Y direction can be suppressed.

[0060] Similarly, in the semiconductor laser device 1, in the third connecting member 11, the portion 111 located in at least a part of the region R31 between the second end surface 53b of the lens 5 and the plane including the fourth surface 71 of the second support body 7 is thinner than the portion 113 located in at least a part of the region R33 on the plane including the fifth surface 72 of the second support body 7. Since the thickness of the portion 111 located in at least a part of the region R31 between the second end surface 53b of the lens 5 and the plane including the fourth surface 71 of the second support body 7 of the third connecting member 11 hardly changes, the axial deviation of the lens 5 due to deformation of the third connecting member 11 can be suppressed.Since the portion 113b located in the region R33b on the fifth surface 72 of the second support body 7 of the third connecting member 11 functions as an anchor, the connection strength between the lens 5 and the second support body 7 can be improved and the axial deviation of the lens 5 in the direction perpendicular to the Y direction can be suppressed.

[0061] Furthermore, in the semiconductor laser device 1, the entire inner opening 64a of the first opening portion 64 overlaps the first end surface 53a of the lens 5 when viewed from the Y direction. Since the first connecting member 8 easily escapes from the region R11a between the first end surface 53a of the lens 5 and the inner opening 64a of the first opening portion 64 in the region R12 in the first opening portion 64, it is possible to suppress the protrusion of the first connecting member 8 from the region R11a between the first end surface 53a of the lens 5 and the inner opening 64a of the first opening portion 64 toward the periphery. This can reliably prevent the first connecting member 8 from adhering to the light-emitting surface 41a of the semiconductor laser element 4 and the light entrance surface 51 and the light exit surface 52 of the lens 5.Particularly, in the present embodiment, since the distance between the light entrance surface 51 of the lens 5 and the light exit surface 41a of the semiconductor laser element 4 is very small, such as 1 mm or less, the above-described configuration capable of suppressing protrusion to the periphery of the first connecting member 8 is extremely effective.

[0062] Similarly, in the semiconductor laser device 1, the entire inner opening 74a of the third opening 74 overlaps the second end surface 53b of the lens 5 when viewed from the Y direction. Therefore, since the third connecting member 11 easily escapes from the region R31a between the second end surface 53b of the lens 5 and the inner opening 74a of the third opening 74 into the region R32 in the third opening 74, it is possible to suppress the protrusion of the third connecting member 11 from the region R31a between the second end surface 53b of the lens 5 and the inner opening 74a of the third opening 74 toward the periphery. This makes it possible to reliably prevent the third connecting member 11 from adhering to the light-emitting surface 41a of the semiconductor laser element 4 and the light entrance surface 51 and the light exit surface 52 of the lens 5.Particularly, in the present embodiment, since the distance between the light entrance surface 51 of the lens 5 and the light exit surface 41a of the semiconductor laser element 4 is very small, such as 1 mm or less, the above-described configuration capable of suppressing protrusion to the periphery of the third connecting member 11 is extremely effective.

[0063] In the semiconductor laser device 1, the first support body 6 is also optically transparent. This makes it possible to confirm the state of the portion 81 of the first connecting member 8 located in the region R11 between the first end surface 53a of the lens 5 and the plane including the first surface 61 of the first support body 6, and the portion 82 of the first connecting member 8 located in the region R12 in the first opening portion 64 of the first support body 6. When the first connecting member 8 and the second connecting member 9 are photocurable polymers, the first connecting member 8 and the second connecting member 9 can be cured by irradiating light through the first support body 6.

[0064] Similarly, in the semiconductor laser device 1, the second support body 7 is optically transparent. This makes it possible to confirm the state of the portion 111 of the third connecting member 11 located in the region R31 between the second end surface 53b of the lens 5 and the plane including the fourth surface 71 of the second support body 7, and the portion 112 of the third connecting member 11 located in the region R32 in the third opening 74 of the second support body 7. When the third connecting member 11 and the fourth connecting member 12 are photocurable polymers, the third connecting member 11 and the fourth connecting member 12 can be cured by irradiating light through the second support body 7.

[0065] Furthermore, in the semiconductor laser device 1, the thickness of the first support body 6 in the Y direction is 2 mm or less. This makes it possible to reliably dispose the first connecting element 8 in the region R12 in the first opening portion 64 of the first support body 6 while reducing the thickness of the first connecting element 8.

[0066] Similarly, in the semiconductor laser device 1, the thickness of the second support body 7 in the Y direction is 2 mm or less. This makes it possible to reliably dispose the third connecting element 11 in the region R32 in the third opening 74 of the second support body 7 while simultaneously reducing the amount of the third connecting element 11.

[0067] Furthermore, in the semiconductor laser device 1, at least a portion of the light exit surface 52 of the lens 5 is offset from the first support body 6 in the Y direction. That is, at least a portion of the light exit surface 52 of the lens 5 protrudes from the first support body 6 in the X direction. This prevents the first connecting element 8 from adhering to the light exit surface 52 of the lens 5.

[0068] Similarly, in the semiconductor laser device 1, at least a portion of the light exit surface 52 of the lens 5 is offset from the second support body 7 in the Y direction. That is, at least a portion of the light exit surface 52 of the lens 5 protrudes from the second support body 7 in the X direction. This can prevent the third connecting element 11 from adhering to the light exit surface 52 of the lens 5.

[0069] Furthermore, in the semiconductor laser device 1, the width of the inner opening 64a of the first opening portion 64 in the X direction is equal to the width of the inner opening 64a of the first opening portion 64 in the Z direction. This suppresses the axial deviation of the lens 5, particularly in the Z direction, even when the portion 82 of the first connecting member 8 located in the region R12 in the first opening portion 64 is deformed, so that the lens 5, which adjusts a scattering angle of the laser light L in the Z direction, can function properly.

[0070] Similarly, in the semiconductor laser device 1, the width of the inner opening 74a of the third opening 74 in the X direction is equal to the width of the inner opening 74a of the third opening 74 in the Z direction. This suppresses the axial deviation of the lens 5, particularly in the Z direction, even if the portion 112 of the third connecting member 11 located in the region R32 in the third opening 74 is deformed, so that the lens 5, which adjusts a scattering angle of the laser light L in the Z direction, can function properly.

[0071] Furthermore, in the semiconductor laser device 1, the first support body 6, which is formed separately from the sub-mount 3, has the second opening portion 65 opened to the first surface 61 and the second surface 62, and the entire inner opening 65a of the second opening portion 65 overlaps the first side surface 32a of the sub-mount 3 when viewed from the Y direction. In this state, the second connecting member 9 is continuously arranged in at least a part of the region R21a between the first side surface 32a of the sub-mount 3 and the inner opening 65a of the second opening portion 65, at least a part of the region R22 in the second opening portion 65 of the first support body 6, and at least a part of the region R23b on the second surface 62 of the first support body 6. Thereby, the structure (e.g.The shape and material of both the sub-mount 3 and the first support body 6 can be configured accordingly. Furthermore, since the second connecting element 9 is arranged in the region R22 in the second opening portion 65 of the first support body 6, the connection strength between the sub-mount 3 and the first support body 6 can be improved.

[0072] Similarly, in the semiconductor laser device 1, the second support body 7, which is formed separately from the sub-mount 3, has the fourth opening 75 open to the fourth surface 71 and the fifth surface 72, and the entire inner opening 75a of the fourth opening 75 overlaps the second side surface 32b of the sub-mount 3 when viewed from the Y direction. In this state, the fourth connecting member 12 is continuously disposed in at least a part of the region R41a between the second side surface 32b of the sub-mount 3 and the inner opening 75a of the fourth opening 75, at least a part of the region R42 in the fourth opening 75 of the second support body 7, and at least a part of the region R43b on the fifth surface 72 of the second support body 7. This allows the structure of both the sub-mount 3 and the second support body 7 to be made suitable for each.In addition, since the fourth connecting member 12 is arranged in the region R42 in the fourth opening 75 of the second support body 7, the connection strength between the sub-bracket 3 and the second support body 7 can be improved.

[0073] Furthermore, in the semiconductor laser device 1, in the first surface 61 of the first support body 6, the area of ​​the region 61b overlapping the first side surface 32a of the sub-holder 3, as viewed from the Y direction, is larger than the area of ​​the region 61a overlapping the first end surface 53a of the lens 5, and the area of ​​the inner opening 65a of the second opening portion 65 is larger than the area of ​​the inner opening 64a of the first opening portion 64. Thereby, the stability of the support for the first support body 6 and the lens 5 can be improved.Moreover, for example, in a case where the sub-mount 3 and the first support body 6 are joined after the lens 5 and the first support body 6 are joined, even if the amount of the second connecting member 9 is increased so that the first support body 6 can be easily moved to align the lens 5 with respect to the semiconductor laser element 4, it is possible to suppress protrusion of the second connecting member 9 from the region 61b overlapping the first side surface 32a of the sub-mount 3 when viewed from the Y direction of the first surface 61 of the first support body 6.

[0074] Similarly, in the semiconductor laser device 1, in the fourth surface 71 of the second support body 7, the area of ​​the region 71b overlapping the second side surface 32b of the sub-mount 3 when viewed from the Y direction is larger than the area of ​​the region 71a overlapping the second end surface 53b of the lens 5 when viewed from the Y direction, and the area of ​​the inner opening 75a of the fourth opening 75 is larger than the area of ​​the inner opening 74a of the third opening 74. Thereby, the stability of the support of the second support body 7 and the lens 5 can be improved.Moreover, for example, in a case where the sub-mount 3 and the second support body 7 are joined after the lens 5 and the second support body 7 are joined, even if the amount of the fourth connecting member 12 is increased so that the second support body 7 can be easily moved to align the lens 5 with respect to the semiconductor laser element 4, it is possible to suppress the protrusion of the fourth connecting member 12 from the region 71b overlapping the second side surface 32b of the sub-mount 3 when viewed from the Y direction of the fourth surface 71 of the second support body 7.

[0075] Furthermore, in the semiconductor laser device 1, the semiconductor laser element 4 has a plurality of light-emitting points 4a arranged in the Y direction, the lens 5 extends in the Y direction, and the light entrance surface 51 of the lens 5 faces the plurality of light-emitting points 4a in the X direction. This makes it possible to suppress the variation in the scattering angle of the laser light L in the Z direction for the laser light L emitted from each light-emitting point 4a.

[0076] Furthermore, in the semiconductor laser device 1, the second opening portion 65 is located on the submount 3 side with respect to the lens 5 at a position corresponding to half the width of the first support body 6 in the X direction. This makes it difficult for the second connecting member 9 to reach the light-emitting surface 41a of the semiconductor laser element 4. Furthermore, the alignment of the laser light L can be easily performed by adjusting the position of the first support body 6.

[0077] Similarly, in the semiconductor laser device 1, the fourth opening 75 is arranged on the sub-mount 3 side with respect to the lens 5 at a position half the width of the second support body 7 in the X direction. This makes it difficult for the fourth connecting member 12 to reach the light-emitting surface 41a of the semiconductor laser element 4. Furthermore, the alignment of the laser light L can be easily performed by adjusting the position of the second support body 7.

[0078] The present disclosure is not limited to the above embodiment. For example, as shown in (a) of Fig. 8, in the first support body 6, at least a part of the inner opening 64a of the first opening portion 64 may overlap the first end surface 53a of the lens 5 when viewed from the Y direction. Furthermore, in the first support body 6, at least a part of the inner opening 65a of the second opening portion 65 may overlap the first side surface 32a of the sub-mount 3 when viewed from the Y direction.

[0079] Similarly, in the second support body 7, at least a portion of the inner opening 74a of the third opening 74 may overlap the second end surface 53b of the lens 5 when viewed from the Y direction. Furthermore, in the second support body 7, at least a portion of the inner opening 75a of the fourth opening 75 may overlap the second side surface 32b of the sub-mount 3 when viewed from the Y direction.

[0080] Furthermore, as in (b) of Fig. As illustrated in FIG. 8, the width of the inner opening 64a of the first opening portion 64 in the X direction may be larger than the width of the inner opening 64a of the first opening portion 64 in the Z direction. That is, the width of the inner opening 64a of the first opening portion 64 in the X direction may be equal to or larger than the width of the inner opening 64a of the first opening portion 64 in the Z direction. Accordingly, even if the portion 82 located in the region R12 in the first opening portion 64 of the first connecting member 8 is deformed, the axial deviation of the lens 5, particularly in the Z direction, is suppressed, so that the lens 5, which adjusts a scattering angle of the laser light L in the Z direction, can be properly operated.For example, the inner opening 64a and the outer opening 64b of the first opening portion 64 have the same shape in the Y direction, the width of the inner opening 64a and the outer opening 64b in the X direction is each about 0.4 mm, and the width of the inner opening 64a and the outer opening 64b in the Z direction is each about 0.2 mm.

[0081] Similarly, the width of the inner opening 74a of the third opening 74 in the X direction may be larger than the width of the inner opening 74a of the third opening 74 in the Z direction. That is, the width of the inner opening 74a of the third opening 74 in the X direction may be equal to or larger than the width of the inner opening 74a of the third opening 74 in the Z direction. Accordingly, even if the portion 112 of the third connecting member 11 located in the region R32 in the third opening 74 is deformed, the axial deviation of the lens 5, particularly in the Z direction, is suppressed, so that the lens 5, which adjusts a scattering angle of the laser light L in the Z direction, can function properly.For example, the inner opening 74a and the outer opening 74b of the third opening 74 have the same shape in the Y direction, the width of the inner opening 74a and the outer opening 74b in the X direction is each about 0.4 mm, and the width of the inner opening 74a and the outer opening 74b in the Z direction is each about 0.2 mm.

[0082] As in (a) and (b) of Fig. 9, the first opening portion 64 may be, for example, a notch open to the first surface 61 and the second surface 62 and the third surface 63. Accordingly, since the first connecting member 8 easily escapes from the region R11a between the first end surface 53a of the lens 5 and the inner opening 64a of the first opening portion 64 toward the notch side, it is possible to suppress the protrusion of the first connecting member 8 from the region R11a between the first end surface 53a of the lens 5 and the inner opening 64a of the first opening portion 64 toward the periphery. Furthermore, the formation of an air reservoir between the first support body 6 and the first connecting member 8 can be suppressed, whereby the occurrence of axial deviation of the lens 5 due to thermal expansion and thermal contraction of the air in the air reservoir can be suppressed.For example, the inner opening 64a and the outer opening 64b of the first opening portion 64 have the same shape when viewed from the Y direction, the width (maximum width) of each of the inner opening 64a and the outer opening 64b in a direction perpendicular to the depth direction of the notch is about 0.2 mm, and the width (maximum width) of each of the inner opening 64a and the outer opening 64b in a direction parallel to the depth direction of the notch is about 0.5 mm.

[0083] Similarly, the third opening 74 may be a notch open to the fourth surface 71, the fifth surface 72, and the sixth surface 73. Accordingly, since the third connecting member 11 easily escapes from the region R31a between the second end surface 53b of the lens 5 and the inner opening 74a of the third opening 74 toward the notch side, it is possible to suppress the protrusion of the third connecting member 11 from the region R31a between the second end surface 53b of the lens 5 and the inner opening 74a of the third opening 74 toward the periphery. Furthermore, the formation of an air reservoir between the second support body 7 and the third connecting member 11 can be suppressed, thereby suppressing the occurrence of axial deviation of the lens 5 due to thermal expansion and thermal contraction of the air in the air reservoir.For example, the inner opening 74a and the outer opening 74b of the third opening 74 have the same shape when viewed from the Y direction, the width (maximum width) of each of the inner opening 74a and the outer opening 74b in a direction perpendicular to the depth direction of the notch is about 0.2 mm, and the width (maximum width) of each of the inner opening 74a and the outer opening 74b in a direction parallel to the depth direction of the notch is about 0.5 mm.

[0084] In particular, as in (a) of Fig. As illustrated in FIG. 9, when the notch, which is the first opening portion 64, is opened to a region 63a located on one side of the third surface 63 of the first support body 6 in the Z direction as viewed from the Y direction, the effect described below is achieved. That is, even if the first connecting member 8 protrudes from the region R12 in the notch to the region on the third surface 63 of the first support body 6, the first connecting member 8 can be prevented from adhering to the light entrance surface 51 and the light exit surface 52 of the lens 5. The same applies to the case where the third opening 74 is a recess.

[0085] In addition, as in (b) of Fig.As illustrated in FIG. 9, when the notch, which is the first opening portion 64, is opened to a region 63b located on a side of the third surface 63 of the first support body 6 opposite to the semiconductor laser element 4 in the X direction as viewed from the Y direction, the effect described below is achieved. That is, even if the portion 82 located in the region R12 in the notch of the first connecting member 8 is deformed, the axial deviation of the lens 5, particularly in the Z direction, is suppressed, so that the lens 5, which adjusts a scattering angle of the laser light L in the Z direction, can function properly. The same applies to the case where the third opening 74 is a notch.

[0086] Furthermore, the first connecting element 8 may not be arranged in at least a part of the region R13b on the second surface 62 of the first support body 6, as long as it is continuously arranged in at least a part of the region R11a between the first end surface 53a of the lens 5 and the inner opening 64a of the first opening portion 64 and at least a part of the region R12 in the first opening portion 64 of the first support body 6.In this case, when the first connecting member 8 reaches the outer opening 64b of the second surface 62 in the first opening portion 64, the portion 82 of the first connecting member 8 located in the region R12 in the first opening portion 64 of the first support body 6 functions as a core, so that the connection strength between the lens 5 and the first support body 6 can be improved and the axial deviation of the lens 5 in the direction perpendicular to the Y direction can be suppressed. However, the first connecting member 8 cannot reach the outer opening 64b of the first opening portion 64 as long as it is continuously located in at least a part of the region R11a and at least a part of the region R12.

[0087] Furthermore, the first connecting member 8 may not be disposed in at least a part of the region R11b between the first end surface 53a of the lens 5 and the first surface 61 of the first support body 6, as long as it is continuously disposed in at least a part of the region R11a between the first end surface 53a of the lens 5 and the inner opening 64a of the first opening portion 64 and at least a part of the region R12 in the first opening portion 64 of the first support body 6. In this case too, the adhesive strength between the lens 5 and the first support body 6 can be improved while suppressing the axial deviation of the lens 5 in the direction perpendicular to the Y direction. Note that the portion 81b of the first connecting member 8 does not need to be an annular shape, and the shape of the portion 81b is not particularly limited.However, from the viewpoint of securing the adhesive force between the lens 5 and the first support body 6, the portion 81b preferably has an annular shape.

[0088] Likewise, the third connecting element 11 may not be disposed in at least a part of the region R33b on the fifth surface 72 of the second support body 7, as long as it is continuously disposed in at least a part of the region R31a between the second end surface 53b of the lens 5 and the inner opening 74a of the third opening 74, and in at least a part of the region R32 in the third opening 74 of the second support body 7. In this case, when the third connecting element 11 reaches the outer opening 74b of the fifth surface 72 in the third opening 74, the portion 112 of the third connecting element 11 disposed in the region R32 in the third opening 74 of the second support body 7 functions as a core, so that the connection strength between the lens 5 and the second support body 7 can be improved and the axial deviation of the lens 5 in the direction perpendicular to the Y direction can be suppressed.However, the third connecting element 11 may not reach the outer opening 74b of the third opening 74 as long as it is continuously arranged in at least a part of the region R31a and at least a part of the region R32.

[0089] The third connecting member 11 may not be disposed in at least a part of the region R31b between the second end surface 53b of the lens 5 and the fourth surface 71 of the second support body 7, as long as it is continuously disposed in at least a part of the region R31a between the second end surface 53b of the lens 5 and the inner opening 74a of the third opening 74 and at least a part of the region R32 in the third opening 74 of the second support body 7. In this case too, the adhesive strength between the lens 5 and the second support body 7 can be improved while suppressing the axial deviation of the lens 5 in the direction perpendicular to the Y direction. Note that the portion 111b of the third connecting member 11 does not need to be an annular shape, and the shape of the portion 111b is not particularly limited.However, from the point of view of securing the adhesive force between the lens 5 and the second support body 7, the portion 111b preferably has an annular shape.

[0090] Furthermore, the second connecting element 9 may not be disposed in at least a part of the region R23b on the second surface 62 of the first support body 6, as long as it is continuously disposed in at least a part of the region R21a between the first side surface 32a of the sub-mount 3 and the inner opening 65a of the second opening portion 65, and at least a part of the region R22 in the second opening portion 65 of the first support body 6. In this case, the second connecting element 9 may or may not reach the outer opening 65b of the second surface 62 in the second opening portion 65.

[0091] Furthermore, the second connecting member 9 may not be disposed in at least a part of the region R21b between the first side surface 32a of the sub-mount 3 and the first surface 61 of the first support body 6, as long as it is continuously disposed in at least a part of the region R21a between the first side surface 32a of the sub-mount 3 and the inner opening 65a of the second opening portion 65 and at least a part of the region R22 in the second opening portion 65 of the first support body 6. In this case, too, the adhesive strength between the sub-mount 3 and the first support body 6 can be improved. Note that the portion 91b of the second connecting member 9 does not need to have an annular shape, and the shape of the portion 91b is not particularly limited.However, from the viewpoint of ensuring the adhesive strength between the sub-mount 3 and the first support body 6, the portion 91b preferably has an annular shape.

[0092] Similarly, the fourth connecting element 12 may not be disposed in at least a part of the region R43b on the fifth surface 72 of the second support body 7, as long as it is continuously disposed in at least a part of the region R41a between the second side surface 32b of the sub-mount 3 and the inner opening 75a of the fourth opening 75 and at least a part of the region R42 in the fourth opening 75 of the second support body 7. In this case, the fourth connecting element 12 may or may not reach the outer opening 75b on the fifth surface 72 side in the fourth opening 75.

[0093] Furthermore, the fourth connecting member 12 may not be disposed in at least a part of the region R41b between the second side surface 32b of the sub-mount 3 and the fourth surface 71 of the second support body 7, as long as it is continuously disposed in at least a part of the region R41a between the second side surface 32b of the sub-mount 3 and the inner opening 75a of the fourth opening 75 and at least a part of the region R42 in the fourth opening 75 of the second support body 7. In this case, too, the adhesive strength between the sub-mount 3 and the second support body 7 can be improved. Note that the portion 121b of the fourth connecting member 12 does not need to have an annular shape, and the shape of the portion 121b is not particularly limited.However, from the viewpoint of securing the adhesive force between the sub-mount 3 and the second support body 7, the portion 121b preferably has an annular shape.

[0094] Furthermore, the first support body 6 may be fixed to the sub-mount 3 via another member or may be formed integrally with the sub-mount 3. Similarly, the second support body 7 may be fixed to the sub-mount 3 via another member or may be formed integrally with the sub-mount 3. Furthermore, the semiconductor laser device 1 may have a base different from the sub-mount 3. Furthermore, the base may be provided with a plurality of members. Furthermore, the semiconductor laser device 1 may not have the sub-mount 3 but may have a heat sink as a base, and the first support body 6 and the second support body 7 may be fixed to the heat sink. Furthermore, the semiconductor laser device 1 may not include the second support body 7 as long as it includes the first support body 6. Furthermore, the semiconductor laser element 4 may have a light-emitting point 4a.

[0095] In the above-described embodiment, the single first opening portion 64 is formed in the first support body 6, but a plurality of first opening portions 64 may be formed in the first support body 6. Furthermore, in the above-described embodiment, the single second opening portion 65 is formed in the first support body 6, but a plurality of second opening portions 65 may be formed in the first support body 6. Similarly, in the above-described embodiment, the single third opening 74 is formed in the second support body 7, but a plurality of third openings 74 may be formed in the second support body 7. Furthermore, in the above-described embodiment, the single fourth opening 75 is formed in the second support body 7, but a plurality of fourth openings 75 may be formed in the second support body 7.

[0096] Furthermore, the shape of the first opening portion 64 as a through-hole is not limited to a cylindrical shape with a center line parallel to the Y direction, but may also have other shapes such as a prismatic shape. For example, the outer opening 64b in the first opening portion 64 may be a through-hole with a conical shape smaller than the inner opening 64a. In this case, the first connecting element 8 can be easily arranged in the first opening portion 64. Furthermore, the first opening portion 64 as a through-hole may extend such that the center line is inclined with respect to the Y direction, or it may be curved within the first support body 6. The same applies to the second opening portion 65, the third opening 74, and the fourth opening 75.

[0097] Furthermore, from the viewpoint of ensuring the strength of the first support body 6, the width (maximum width) of the inner opening 64a and the outer opening 64b of the first opening portion 64 in the Z direction is preferably 1 / 2 or less of the width of the first support body 6 in the Z direction. Furthermore, the width (maximum width) of each of the inner opening 64a and the outer opening 64b of the first opening portion 64 in the Z direction is preferably 1 / 10 or more of the width of the first support body 6 in the Z direction, and more preferably 1 / 5 or more of the width of the first support body 6 in the Z direction, in order to ensure sufficient space for the inflow of the first connecting element 8. The same applies to the second opening portion 65, the third opening 74, and the fourth opening 75.

[0098] Furthermore, in the manufacture of the semiconductor laser device 1, the first connecting member 8 can be moved to the region R12 in the first opening portion 64 of the first support body 6 by disposing the first connecting member 8 in the region R11 (regions R11a and R11b) between the first end surface 53a of the lens 5 and the first surface 61 of the first support body 6. In this case, the first connecting member 8 can be moved to the region R12 in the first opening portion 64 of the first support body 6 by attaching the first connecting member 8 to the first end surface 53a of the lens 5 or the first surface 61 of the first support body 6 and pressing either the first end surface 53a or the first surface 61 against the other.Alternatively, at the time of manufacturing the semiconductor laser device 1, the first connecting member 8 may be moved into the region R11b between the first end surface 53a of the lens 5 and the first surface 61 of the first supporting body 6 by disposing the first connecting member 8 in the region R12 in the first opening portion 64 of the first supporting body 6. In this case, the first connecting member 8 may be moved into the region R11b between the first end surface 53a and the first surface 61 by injecting the first connecting member 8 into the region R12 in the first opening portion 64 from the outer opening 64b side (ie, from the second surface 62 side) in a state where the first end surface 53a of the lens 5 and the first surface 61 of the first supporting body 6 are brought into contact with each other.When there is a small gap between the first end surface 53a and the first surface 61, the first connecting element 8 can penetrate into the region R11b between the first end surface 53a and the first surface 61 by capillary action. However, from the viewpoint that the first connecting element 8 can be easily arranged in the region R11b, the former manufacturing method is preferable.

[0099] Similarly, at the time of manufacturing the semiconductor laser device 1, by disposing the third connecting member 11 in the region R31 (regions R31a and R31b) between the second end surface 53b of the lens 5 and the fourth surface 71 of the second support body 7, the third connecting member 11 can be moved to the region R32 in the third opening 74 of the second support body 7, or by disposing the third connecting member 11 in the region R32 in the third opening 74 of the second support body 7, the third connecting member 11 can be moved to the region R31b between the second end surface 53b of the lens 5 and the fourth surface 71 of the second support body 7. However, from the viewpoint that the third connecting member 11 can be easily disposed in the region R31b, the former manufacturing method is preferable.

[0100] Furthermore, in the manufacture of the semiconductor laser device 1, by disposing the second connecting member 9 in the region R21 (regions R21a and R21b) between the first side surface 32a of the sub-mount 3 and the first surface 61 of the first support body 6, the second connecting member 9 can be moved to the region R22 in the second opening portion 65 of the first support body 6, or by disposing the second connecting member 9 in the region R22 in the second opening portion 65 of the first support body 6, the second connecting member 9 can be moved to the region R21b between the first side surface 32a of the sub-mount 3 and the first surface 61 of the first support body 6. However, from the viewpoint that the second connecting member 9 can be easily disposed in the region R21b, the former manufacturing method is preferable.

[0101] Similarly, at the time of manufacturing the semiconductor laser device 1, by disposing the fourth connecting member 12 in the region R41 (regions R41a and R41b) between the second side surface 32b of the sub-mount 3 and the fourth surface 71 of the second support body 7, the fourth connecting member 12 can be moved to the region R42 in the fourth opening 75 of the second support body 7, or by disposing the fourth connecting member 12 in the region R42 in the fourth opening 75 of the second support body 7, the fourth connecting member 12 can be moved to the region R41b between the second side surface 32b of the sub-mount 3 and the fourth surface 71 of the second support body 7. However, from the viewpoint that the fourth connecting member 12 can be easily disposed in the region R41b, the former manufacturing method is preferable.

[0102] Furthermore, at least a part of the light-output surface 52 of the lens 5 may protrude from the distal end 6a of the first support body 6 and the distal end 7a of the second support body 7 to one side in the Z direction when viewed from the Y direction. That is, at least a part of the light-output surface 52 of the lens 5 may be offset from the first support body 6 and the second support body 7 in the direction perpendicular to the Y direction (a direction including the X direction and the Z direction) when viewed from the Y direction. In this case, the first connecting member 8 and the third connecting member 11 can be prevented from adhering to the light-output surface 52 of the lens 5.

[0103] Furthermore, at least a part of the light entrance surface 51 of the lens 5 may protrude from the distal end 6a of the first support body 6 and the distal end 7a of the second support body 7 to one side in the Z direction when viewed from the Y direction. That is, at least a part of the light entrance surface 51 of the lens 5 may be offset from the first support body 6 and the second support body 7 in the direction perpendicular to the Y direction when viewed from the Y direction. In this case, the first connecting member 8 and the third connecting member 11 can be prevented from adhering to the light entrance surface 51 of the lens 5.

[0104] Furthermore, the light-exit surface 52 of the lens 5, when viewed from the Y direction, must not be offset from the first support body 6 and the second support body 7 in the direction perpendicular to the Y direction. In this case, the entire first end surface 53a of the lens 5 may overlap the first surface 61 of the first support body 6 when viewed from the Y direction. Furthermore, the entire second end surface 53b of the lens 5 may overlap the fourth surface 71 of the second support body 7 when viewed from the Y direction. List of reference symbols 1 semiconductor laser device 3 Base bracket 32a First side surface (side surface) 4 semiconductor laser element 4a Light-emitting point 5 lens 51 Light entry surface 52 light exit surface 53a First end surface 53b Second end surface 6 First carrier body 61 First Surface 61a, 61b Region 62 Second Surface 63 Third Surface 63a, 63b Region 64 First opening section 64a Inner opening 64b Outer opening 65 Second opening section 65a Inner opening 7 Second carrier body 71 Fourth Surface 72 Fifth Surface 74 Third Opening 74a Inner opening 8 First bonding member 81, 82, 83 portions 9 Second bond member 11 Third bond member L Laser light R11a, R11b, R12, R13b, R21a, R21b, R22, R31a, R31b, R32 region QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] JP 2014-170888 A

[0003]

Claims

[1] A semiconductor laser device comprising: a base; a semiconductor laser element disposed on the base and having at least one light-emitting point configured to emit laser light; a lens having a light entrance surface facing the at least one light-emitting point in a first direction, a light exit surface located on a side opposite the light entrance surface in the first direction, a first end surface located on one side in a second direction perpendicular to the first direction, and a second end surface located on the other side in the second direction, and configured to adjust a scattering angle of the laser light in a third direction perpendicular to both the first direction and the second direction; a first support body having a first surface located on the side of the first end surface in the second direction and a second surface located on a side opposite the first end surface in the second direction, and supporting the lens with respect to the base; and a first connecting element connecting the lens and the first carrier body, wherein the first carrier body has a first opening portion which is open towards the first surface and the second surface, at least a part of an inner opening of the first opening portion on the first surface side overlaps the first end surface when viewed from the second direction, and the first connecting element is continuously arranged in at least a part of a region between the first end surface and the inner opening of the first opening portion and in at least a part of a region in the first opening portion. [2] The semiconductor laser device according to claim 1, wherein the first connecting member is continuously arranged in at least a part of a region between the first end surface and the first surface, at least a part of the region between the first end surface and the inner opening of the first opening portion, and at least a part of the region in the first opening portion. [3] The semiconductor laser device according to claim 1 or 2, wherein the first opening portion is a through hole opened to the first surface and the second surface. [4] The semiconductor laser device according to claim 1 or 2, wherein the first opening portion is a notch opened to the first surface and the second surface and opened to a third surface connecting the first surface and the second surface. [5] A semiconductor laser device according to claim 4, wherein the notch is opened to a region of the third surface located on a side opposite to the semiconductor laser element in the first direction as viewed from the second direction. [6] A semiconductor laser device according to claim 4, wherein the notch is opened to a region of the third surface located on one side in the third direction when viewed from the second direction. [7] A semiconductor laser device according to any one of claims 1 to 6, wherein the first connecting member reaches an outer opening of the first opening portion on the second surface side. [8] A semiconductor laser device according to any one of claims 1 to 7, wherein the first connecting member is continuously arranged in at least a part of the region between the first end surface and the inner opening of the first opening portion, at least a part of the region in the first opening portion, and at least a part of a region on the second surface. [9] A semiconductor laser device according to claim 8, wherein in the first connecting member, a portion located in at least a part of the region between the first end surface and the inner opening of the first opening portion is thinner than a portion located in at least a part of the region on the second surface. [10] A semiconductor laser device according to any one of claims 1 to 9, wherein the entire inner opening of the first opening portion overlaps the first end surface when viewed from the second direction. [11] A semiconductor laser device according to any one of claims 1 to 10, wherein the first support body has optical transparency. [12] A semiconductor laser device according to any one of claims 1 to 11, wherein the thickness of the first support body in the second direction is 2 mm or less. [13] A semiconductor laser device according to any one of claims 1 to 12, wherein at least a part of the light exit surface is offset from the first support body as seen in the second direction. [14] The semiconductor laser device according to any one of claims 1 to 13, wherein a width of the inner opening of the first opening portion in the first direction is equal to or larger than a width of the inner opening of the first opening portion in the third direction. [15] A semiconductor laser device according to any one of claims 1 to 14, further comprising a second connecting element connecting the base and the first support body formed separately from the base, the first support body having a second opening portion open to the first surface and the second surface, at least a part of an inner opening of the second opening portion on the first surface side overlaps a side surface of the base when viewed from the second direction, and the second connecting element is continuously arranged in at least a part of a region between the side surface and the inner opening of the second opening portion and at least a part of a region in the second opening portion. [16] The semiconductor laser device according to claim 15, wherein the second connecting member is continuously disposed in at least a part of a region between the side surface and the first surface, at least a part of the region between the side surface and the inner opening of the second opening portion, and at least a part of the region in the second opening portion. [17] A semiconductor laser device according to claim 15 or 16, wherein in the first surface, an area of ​​a region overlapping the side surface when viewed from the second direction is larger than an area of ​​a region overlapping the first end surface when viewed from the second direction, and an area of ​​the inner opening of the second opening portion is larger than an area of ​​the inner opening of the first opening portion. [18] A semiconductor laser device according to any one of claims 1 to 17, further comprising: a second support body having a fourth surface located on the second end surface side in the second direction and a fifth surface located on a side opposite the second end surface in the second direction, and supporting the lens with respect to the base; and a third connecting element connecting the lens and the second carrier body, wherein the second carrier body has a third opening which is open to the fourth surface and the fifth surface, at least a part of an inner opening of the third opening on the fourth surface side overlaps the second end surface when viewed from the second direction, and the third connecting element is continuously arranged in at least a part of a region between the second end surface and the inner opening of the third opening and at least a part of a region in the third opening. [19] The semiconductor laser device according to claim 18, wherein the third connecting element is continuously arranged in at least a part of a region between the second end surface and the fourth surface, at least a part of the region between the second end surface and the inner opening of the third opening, and at least a part of the region in the third opening. [20] A semiconductor laser device according to any one of claims 1 to 19, wherein the semiconductor laser element has a plurality of light-emitting points arranged in the second direction, the lens extends in the second direction, and the light entry surface faces the plurality of light exit points in the first direction.

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