OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC DEVICE

Abstract

The invention relates to an optoelectronic device comprising a semiconductor layer stack consisting of at least one first layer of a first conductivity type, a second layer of a second conductivity type, and an active region between the first and second layers. The first layer comprises a buried contact layer arranged between the active region and a light-emitting surface of the semiconductor layer stack.The semiconductor layer stack comprises: a bottom surface opposite the light-emitting surface; first sidewall sections extending from the bottom surface towards the light-emitting surface to a height between the active region and the buried contact layer; second sidewall sections extending from a height between the active region and the buried contact layer to the buried contact layer; and third sidewall sections extending from the buried contact layer towards the light-emitting surface and differing from the first and second sidewall sections.The optoelectronic device further comprises a material layer covering at least parts of the first side wall sections, a first contact element covering at least parts of the material layer and the second side wall sections and electrically in contact with the buried contact layer, and a second contact element electrically in contact with the underside.