SYSTEMS AND METHODS FOR RECOVERING ORGANIC CONTAMINANTS FROM SEMICONDUCTIVE WAFERS

Abstract

Systems and procedures for the integrated decomposition of a semiconducting wafer and its scanning for organic and inorganic contaminants are described.In one aspect, a method comprises, but is not limited to, positioning a nozzle above the surface of a semiconducting wafer, the semiconducting wafer being supported adjacent to or within the interior of a chamber body; supplying a first scan fluid comprising one or more organic fluids to an inlet port of the nozzle; directing a portion of the first scan fluid onto the surface of the semiconducting wafer to permit interaction between the scan fluid and one or more organic contaminants present on the surface of the semiconducting wafer; and removing the first scan fluid, containing at least a portion of the one or more organic contaminants, from the surface of the semiconducting wafer via the nozzle.

Description

CROSS-REFERENCE TO RELATED REGISTRATIONS The present application claims the benefits pursuant to 35 USC §119(e) of the provisional US application serial no. 63 / 536,194, filed on September 1, 2023, entitled “SYSTEMS AND METHODS FOR RECOVERY AND IDENTIFICATION OF ORGANIC CONTAMINANTS AND RESIDUE ON SEMICONDUCTOR WAFER SURFACES”, the provisional US application serial no. 63 / 585,787, filed on September 27, 2023, entitled “COLLECTION AND COMBINATION OF MULTIPLE SCAN SAMPLES FOR SEMICONDUCTOR WAFER ANALYSIS”, and the provisional US application serial no. 63 / 585,805, filed on September 27, 2023, entitled “INLINE GENERATION OF ORGANIC SOLVENT SCAN SOLUTION FOR SEMICONDUCTOR WAFER ANALYSIS”, and provisional U.S. application serial no. 63 / 585,810, filed on September 27, 2023, entitled “SYSTEMS AND METHODS FOR RECOVERING ORGANIC CONTAMINANTS FROM SEMICONDUCTING WAFERS”. The provisional U.S. applications serial no.63 / 536,194 , 63 / 585,787 , 63 / 585,805 and 63 / 585,810 are incorporated herein by reference in their entirety. BACKGROUND Mass spectrometry is an analytical technique used to determine trace contaminants (e.g., elemental, organic, or other impurities) in liquid or gas samples. Sample delivery systems can be used to feed fluid samples to various analytical instruments. A sample delivery system can transport an aliquot of a liquid sample to an nebulizer, which converts the sample into a polydisperse aerosol suitable for ionization in the mass spectrometer. For elemental contaminants, inductively coupled plasma (ICP) ionization sources are used, while for organic contaminants, electrospray, atmospheric pressure chemical ionization (APCI), or other ionization sources are employed. These ionization sources are coupled to a mass spectrometer, such as a quadrupole mass spectrometer, a time-of-flight mass spectrometer, an ion trap mass spectrometer, or the like. OVERVIEW Systems and methods for the integrated decomposition of a semiconducting wafer and its scanning for organic and inorganic contaminants are described. In one aspect, a method for scanning the surface of a semiconducting wafer for organic contaminants using a nozzle comprises, but is not limited to, positioning a nozzle above the surface of a semiconducting wafer, the semiconducting wafer being supported adjacent to or within the interior of a chamber body; supplying a first scan fluid comprising one or more organic solvents to an inlet port of the nozzle; and directing a portion of the first scan fluid onto the surface of the semiconducting wafer to permit interaction between the first scan fluid and one or more organic contaminants present on the surface of the semiconducting wafer.The removal of the first scan fluid, containing at least a portion of one or more organic contaminants, from the surface of the semiconducting wafer via the nozzle; the introduction of a second scan fluid, comprising one or more organic solvents, to the nozzle inlet port; the directing of a portion of the second scan fluid onto the surface of the semiconducting wafer to allow interaction between the second scan fluid and one or more residual organic contaminants present on the surface of the semiconducting wafer following the removal of the first scan fluid; and the removal of the second scan fluid, containing at least a portion of one or more residual organic contaminants, from the surface of the semiconducting wafer via the nozzle. In one aspect, a method for scanning the surface of a semiconducting wafer for organic contaminants using a nozzle comprises, but is not limited to, positioning a nozzle above the surface of a semiconducting wafer, the semiconducting wafer being carried adjacent to or within the interior of a chamber body; supplying a first scan fluid comprising one or more organic solvents to an inlet port of the nozzle; directing a portion of the first scan fluid onto the surface of the semiconducting wafer to permit interaction between the first scan fluid and one or more organic contaminants present on the surface of the semiconducting wafer;during the directing of part of the first scan fluid onto the surface of the semiconducting wafer, the feeding of a second part of the first scan fluid to the nozzle to replenish a volume of the first scan fluid on the surface of the semiconducting wafer; and the removal of the first scan fluid, which contains at least part of one or more organic contaminants, from the surface of the semiconducting wafer via the nozzle. In one aspect, a method for scanning the surface of a semiconducting wafer for organic contaminants using a nozzle comprises, but is not limited to, positioning a nozzle above the surface of a semiconducting wafer, the semiconducting wafer being supported adjacent to or within the interior of a chamber body; supplying a first scan fluid comprising one or more organic fluids to an inlet port of the nozzle; directing a portion of the first scan fluid onto the surface of the semiconducting wafer to permit interaction between the scan fluid and one or more organic contaminants present on the surface of the semiconducting wafer; and removing the first scan fluid, containing at least a portion of the one or more organic contaminants, from the surface of the semiconducting wafer via the nozzle. This overview is provided to present a selection of concepts in simplified form, which are described in more detail below. This overview is not intended to identify key features or essential characteristics of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter. FIGURES The detailed description is given with reference to the accompanying figures. Identical reference numerals used in different places in the description and the figures may indicate similar or identical things. Fig. 1A is an isometric view of a system for recovering organic contaminants from a semiconducting wafer according to one embodiment of this disclosure. Fig. 1B is an isometric view of the system of Fig. 1A, wherein a semiconducting wafer is positioned within a chamber. Fig. 2A is a cross-sectional view of the system of Fig. 1A, wherein the semiconducting wafer is positioned at a scanning position. Fig. 2B is a cross-sectional view of the system of Fig. 1A, wherein the semiconducting wafer is positioned at a decomposition position. Fig. 2C is a cross-sectional view of the system of Fig. 1A, wherein the semiconducting wafer is positioned at a rinsing position.Figure 3 is an isometric view of part of a chamber body of the system of Figure 1A according to an embodiment of this disclosure. Figure 4 is an isometric view of the system of Figure 1A, wherein a scan arm positions a nozzle over a surface of the semiconducting wafer, which is positioned at a scanning position. Figure 5 is a partial isometric view of the system of Figure 1A, wherein the scan arm is positioned at a cleaning station for the nozzle. Figure 6 is a top view of the scan arm, which, during a scanning process of the semiconducting wafer, is positioned at a first position over the semiconducting wafer and a subsequent second position over the semiconducting wafer, according to an embodiment of this disclosure. Figure 7A is an isometric view of a nozzle for a semiconductor wafer decomposition and scanning system according to an embodiment of this disclosure. Figure 7B is a top view of the nozzle of Figure 7A.Figure 7C is a bottom view of the nozzle of Figure 7A. Figure 7D is a cross-sectional view of the nozzle of Figure 7B along 7D-7D. Figure 8A is a partial cross-sectional view of a nozzle assembly for an integrated decomposition and scanning system of a semiconducting wafer according to an embodiment of this disclosure. Figure 8B is a partial cross-sectional view of the nozzle assembly of Figure 8A in contact with a surface. Figure 8C is a partial cross-sectional view of the nozzle assembly of Figure 8A lifted from the surface and leveled. Figure 9A is a circuit diagram of a fluid handling system for a semiconductor wafer decomposition and scanning system according to an embodiment of this disclosure. Figure 9B is a circuit diagram of the fluid handling system of Figure 9A in a configuration for loading a chemical blank sample according to an embodiment of this disclosure. Figure 9C is a circuit diagram of the fluid handling system of Figure 9A in a configuration for loading a chemical blank sample according to an embodiment of this disclosure.Fig. 9A in a chemical injection configuration according to an embodiment of this disclosure. Fig. 9D is a circuit diagram of the fluid handling system of Fig. 9A in a nozzle loop loading configuration according to an embodiment of this disclosure. Fig. 9E is a circuit diagram of the fluid handling system of Fig. 9A in a nozzle loading configuration according to an embodiment of this disclosure. Fig. 9F is a circuit diagram of the fluid handling system of Fig. 9A in a recovery configuration according to an embodiment of this disclosure. Fig. 10 is a circuit diagram of an atomizer fluid handling system for a semiconductor wafer decomposition and scanning system according to an embodiment of this disclosure. Fig. 11A is a diagrammatic side view of a semiconducting wafer having organic contaminants on one surface of the semiconducting wafer.Figure 11B is a diagrammatic side view of a system comprising a scan nozzle shown supplying a scan solution to the semiconducting wafer of Figure 11A, according to one embodiment of this disclosure. Figure 11C is a diagrammatic side view of the system of Figure 11B, showing a scan solution replenishment system for replenishing a scan solution as it evaporates from the surface of the semiconducting wafer, according to one embodiment of this disclosure. Figure 11D is a diagrammatic side view of the system of Figure 11B, wherein the organic contaminants are supplied to the scan solution, and the scan nozzle is shown drawing the scan solution from the surface of the semiconducting wafer, according to one embodiment of this disclosure. Figure 11E is a diagrammatic view of the system of Figure 11B.11D, wherein the scan nozzle transfers the scan solution containing organic contaminants to an analysis system, according to one embodiment of this disclosure. Fig. 12 is a graphic showing exemplary experimental results of recovering organic contaminants from the surface of a semiconducting wafer, according to one embodiment of this disclosure. Fig. 13 is a schematic illustration of a system for collecting and combining multiple scan samples for analysis of a semiconductor wafer, according to embodiments of this disclosure. Fig. 14 is a schematic illustration of a system for collecting and combining multiple scan samples for analysis of a semiconductor wafer, shown with a sample collection vessel having a conical bottom in conjunction with an outlet valve, according to embodiments of this disclosure.Figure 15 is a schematic illustration of a system for the inline generation of scan solutions of organic solvents and calibration standards according to embodiments of this disclosure. Figure 16 is a schematic illustration of a system for the inline generation of scan solutions of organic solvents and calibration standards, shown with a plurality of pumps for delivering organic solvent or calibration standard solutions to a mixing valve, according to embodiments of this disclosure. DETAILED DESCRIPTION overview Determining trace element concentrations or amounts in a sample can provide information about the sample's purity or its suitability for use as a reagent, reactive component, or the like. For example, in certain production or manufacturing processes (e.g., mining, metallurgy, semiconductor manufacturing, pharmaceutical processing, etc.), tolerances for impurities can be very tight, for instance, on the order of fractions of parts per billion (ppb). In semiconductor wafer processing, the wafer is tested for impurities such as metallic impurities, organic impurities, or residues that could impair the wafer's capabilities or render it unusable.For example, metallic impurities on the wafer can reduce the carrier lifetime, cause dielectric breakdown of wafer components, and the like, whereas organic impurities can slow down the growth of silicon dioxide, cause unintended doping, neutralize photochemically generated acids, degrade gate-oxide constructions, alter hydrophobicity or hydrophilicity, and the like. Gas-phase decomposition (VPD) with subsequent wafer scanning is a technique for analyzing wafer composition to determine the presence of metallic impurities. Conventional VPD and scanning techniques have limited throughput when treating and scanning silicon wafers for impurity analysis. For example, systems often use separate chambers for the VPD and scanning procedures. In the VPD chamber, silicon dioxide and other metallic impurities present on the surface are exposed to a vapor (e.g., hydrofluoric acid (HF), hydrogen peroxide (H₂O₂), or combinations thereof) and removed from the surface as a vapor (e.g., silicon tetrafluoride (SiF₄)).For scanning, the treated wafer is transported to a separate chamber where a droplet of liquid is applied to the treated wafer surface to collect residues following the reaction of the decomposition vapor with the wafer. While VPD techniques can be appropriate for detecting and identifying metallic impurities, there are significant limitations to using conventional VPD techniques for recovering and identifying organic contaminants or residues present in or on semiconducting wafers that may interfere with semiconductor processing. For example, decomposition fluids used in conventional VPD techniques can break down or otherwise react with organic molecules, thus preventing the identification of the original contaminants and the determination of their concentrations on the semiconducting wafer. Furthermore, certain analytical systems used in VPD systems do not allow for the recovery and identification of organic contaminants or residues.For example, inductively coupled plasma systems used in the identification of metallic impurities may prevent the identification of the arrangement of elements present in the organic sample, such an arrangement would be used to determine the corresponding identity of the original organic molecule. Furthermore, when attempting to use a single scan solution to recover organic contaminants, it may not be possible to aspirate all organic impurities present on a semiconducting wafer. For example, a single scan might only be able to collect residues of 80% of all residues present on the semiconducting wafer, leaving the remainder behind. The inability to collect all residues could be due to the specific structure of the contaminants (e.g., metallic, organic, etc.), the chemical composition of the scan solution (e.g., polar, nonpolar, etc.), whether a decomposition process occurred prior to scanning, or similar factors.For example, organic molecules can exhibit varying recovery efficiencies relative to other organic molecules, and the type of solvent used by the scan nozzle can influence which organic residues are removed from the semiconducting wafer, how much of the organic residue is removed, and which organic residues remain on the surface. Therefore, an analysis of the scan would only provide partial information about the total amount of contaminants present, with the remaining unknown contaminants potentially having a drastic and negative impact on semiconductor fabrication and integration.Attempting to premix scan solutions can result in inaccurate chemical ratios due to the interaction of chemicals during storage, imprecise transfer methods during mixing, contamination risks during storage and transport, or similar factors. This can lead to an inability to collect organic contaminants or parts thereof. Accordingly, the present disclosure relates at least in part to systems and methods for the integrated decomposition of a semiconducting wafer and its scanning for organic and inorganic contaminants. In one aspect, a system can enable both the decomposition and scanning of a semiconductor wafer, wherein a single-chamber footprint allows for both the decomposition and scanning of the semiconducting wafer. Alternatively or additionally, the system can be operated without an initial decomposition step, for example, to avoid breaking down organic contaminants prior to scanning (e.g., to preserve the possibility of subsequent identification of the organic contaminants).During scanning, a nozzle directs a fluid flow along the surface of the semiconducting wafer between a first nozzle port and a second nozzle port, guided by a nozzle tip that defines an elongated channel to direct the flow along the wafer surface. Alternative or additional nozzles can be used, for example, to carry scan solutions containing organic solvents to collect organic contaminants. In terms of aspects, the chamber defines at least two openings through which the semiconducting wafer can pass by the operation of a wafer carrier and an associated motor system. It features a projection to provide zones within the chamber for decomposition and rinsing, while controlling fluid movement within the chamber, such as for drainage and preventing cross-contamination. The motor system controls the vertical position of the wafer carrier relative to the chamber body to move the semiconductor within the chamber. Positioning above the chamber body is also supported by the motor system for wafer loading and unloading, providing access to the nozzle, and similar functions.The chamber further includes an atomizer or other spraying device to direct decomposition fluid, aerosolized by the atomizer, directly onto the surface of the semiconducting wafer, while the wafer holder positions the semiconducting wafer within an interior compartment of the chamber. A chamber may include a lid that can be opened and closed relative to the chamber to isolate the interior from the exterior, such as during the decomposition process. The nozzle can be positioned relative to the chamber by a rotatable scan arm, which can direct the nozzle away from the chamber to allow the lid to be closed (e.g., during the decomposition procedure) or to allow the nozzle to be rinsed at a rinsing station. Furthermore, the rotatable scan arm can position the nozzle over the semiconducting wafer during the scanning procedure.The system can utilize a fluid handling system comprising switchable selection valves and pumps to control the supply of fluid to the nozzle, from the wafer surface, for blank sample preparation, for rinsing system components, and the like. Following or during the scanning procedure, the scanning fluid can be collected and sent to an analytical instrument (e.g., an ICP-MS instrument) for the analytical determination of its composition. In this process, a scan nozzle can introduce an organic scan solution onto one or more surfaces of a semiconducting wafer. The scan nozzle is moved relative to the surface of the semiconducting wafer to draw organic contaminants into the scan solution. The scan solution is collected from the surface of the semiconducting wafer (e.g., by a pump in fluid connection with the scan nozzle) and transferred to an analytical system for identification and concentration determination. The analytical system may include a time-of-flight (TOF) mass spectrometer, a triple quadrupole (triple quad or QQQ) mass spectrometer, a gas chromatography-mass spectrometry (GC-MS) system, a gas chromatography-flame ionization detector (GC-FID), or another analytical system used for the analysis of organic molecules, or combinations thereof. In some aspects, the present disclosure relates at least partially to systems and methods for collecting and combining multiple scan samples for the analysis of contaminants that may be present on a semiconductor wafer. A sample collection vessel can be used to collect multiple scans from a scan nozzle or scan nozzles before a combined sample is transferred to an analytical device (e.g., ICP-MS, time-of-flight spectrometer, etc.). Multiple wafer scans are collected in the sample collection vessel and are allowed to blend into a single sample for transfer to the analytical device. In implementations, the scan nozzle or scan nozzles can utilize the same or different scan solutions to analyze different compositions of contaminants (e.g., metallic, organic, etc.).The aim is to provide a single sample that includes a complete recovery profile of wafer contaminants. For example, one or more scans can be performed using polar solvents, nonpolar solvents, aqueous solutions, or combinations thereof, with the scans being fed into the sample collection vessel, blended into a single sample, and transferred to the analyzer for identification and quantification of the contaminants. In some aspects, the present disclosure relates at least partially to systems and methods for the inline generation of organic scan solutions and internal standards for the analysis of organic contaminants that may be present on a semiconductor wafer. A pumping system is fluidically coupled to a variety of organic solvents, internal standards, or combinations thereof to transfer two or more of the organic solvents and internal standards to an inline mixing device (e.g., a mixing port of a multi-port valve, a multi-port mixing manifold, etc.). A control unit can manage the operation of the system to draw in the precise quantities of organic solvents and internal standards for mixing as required and to control the timing of their dispensing to the scan nozzle for application to one or more surfaces of the semiconductor wafer.The system provides auto-calibration for organic analysis systems by allowing varying concentrations of internal standards to be added to organic solvents to generate highly precise calibration curves. Furthermore, the system can generate a variety of organic scan solutions by utilizing any combination of solvents and analytes fluidically coupled to the pumping system. Inline generation of organic scan solutions reduces the likelihood of environmental contamination of the semiconducting wafer or the chemicals used for its analysis, while simultaneously allowing precise control of the fluids delivered by the scan nozzle. This enables the use of small volumes of organic solvents (thereby, for example, improving the analytical capability for lower limits of detection of contaminants). Exemplary implementations Figures 1A to 16 illustrate aspects of a system for the integrated decomposition and scanning of a semiconducting wafer to recover organic and inorganic contaminants from the wafer (“System 100”) according to various embodiments of this disclosure. The System 100 generally comprises a chamber 102, a scan arm assembly 104, and a fluid handling system 106 (e.g., at least partially shown in Figures 9A-10) to enable at least decomposition and scanning procedures of a semiconducting wafer 108 (hereafter sometimes referred to as the “wafer”) by supplying decomposition fluids to the wafer and by supplying scanning fluids to and removing them from the surface of a wafer 108. In implementations, the system can enable 100 scanning procedures before or without the addition of decomposition fluids to the wafer, thereby avoiding the breaking up of organic contaminants before scanning (e.g.(to keep open the possibility of subsequent identification of the organic contaminants). Chamber 102, with a single chamber footprint, provides an environment for each of wafer decomposition and wafer scanning and includes a wafer carrier 110 to hold the wafer 108 and a motor system 112 to control a vertical position of the wafer carrier 110 relative to chamber 102 (e.g., within chamber 102, above chamber 102, etc.) in order to position the wafer 108 for the decomposition and scanning procedures or during other procedures of system 100.The motor system 112 additionally provides rotary control of the wafer carrier 110 to rotate the wafer 108 during various procedures of the system 100, and provides rotary and vertical control of the scan arm assembly 104 to move a nozzle of the scan arm assembly 104 into positions above the wafer 108 during scanning procedures and into positions at a rinsing station 114 for nozzle cleaning. In implementations, the wafer carrier 110 includes a vacuum table to hold the wafer 108 relative to the wafer carrier 110, such as during movement of the wafer carrier 110. The chamber 102 comprises a chamber body 116, which defines an interior space 118 to receive the wafer 108 for processing. A projection 120 extends into the interior space 118 between an upper part 122 and a lower part 124 of the chamber body 116. In some implementations, the chamber body 116 defines a first opening 126 on the upper part 122 through which the wafer 108 can be received into the interior space 118. In other implementations, the projection 120 defines a second opening 128 on an intermediate part of the interior space 118 between the upper part 122 and the lower part 124 (e.g., between the first opening 126 and the lower part 124). During an exemplary operation, shown in Fig.As shown in Figure 1A, the system 100 can pick up a semiconducting wafer 108 onto the wafer carrier 110, for example by operating an automated arm 50 that selects a wafer 108 from a FOUP (front-end unified pod) or other location and feeds the selected wafer 108 onto the wafer carrier 110 (e.g., centering it on the wafer carrier 110). The motor system 112 can position the wafer carrier 110 at, above, or adjacent to the upper part 122 of the chamber body 116 to allow the automated arm 50 access to the wafer carrier 110 in order to place the wafer 108 onto the wafer carrier 110. For example, during the loading of the wafer 108, the wafer carrier 110 can be positioned at a first position (e.g., shown in Fig. 2A) adjacent to the first opening 126. In implementations, the first position of the wafer carrier 110 is outside the interior area 118 (e.g.,(extended through the first opening 126) positioned to receive the wafer 108. The system 100 can include a cover 130 to isolate the inner area 118 from an outer area 132, enabling wafer degradation while limiting the exposure of the degradation fluid to the outer area 132. For example, the cover 130 can be sized and shaped to cover the first opening 126 when positioned over it. The cover 130 can be positioned between an open position (e.g., shown in Fig. 1A) and a closed position (e.g., shown in Fig. 1B). The open position can be used during wafer loading to provide access for the automated arm, during scanning procedures, during wafer unloading procedures, and the like.In some implementations, the lid 130 is in the open position when the wafer carrier 110 is in the first position adjacent to the first opening 126, to provide the nozzle of the scan arm assembly 104 with access to the wafer 108. The closed position can be used during wafer decomposition procedures to prevent the decomposition fluid from escaping the chamber 102 through the first opening 126. In some implementations, at least part of the lid 130 contacts the chamber body 116 to isolate the inner area 118 from the outer area 132. Within the inner area 118, the wafer 108 is moved into a second position by the motor system 112, which controls the vertical position of the wafer carrier 110. For example, the motor system 112 moves the wafer carrier 110 into the second position within the inner area 118, before or while the lid 130 moves from the open position to the closed position.In implementations, the lid 130 is positioned adjacent to the chamber body 116 and rotatably coupled to a support 134 via a lid arm 136 in order to move the lid 130 back and forth between the open position and the closed position. Following the feeding of the wafer 108 to the wafer carrier 110, the system 100 can transition to a decomposition configuration to enable the decomposition of one or more surfaces or edges of the wafer 108. For example, the system 100 can assist in the decomposition of the wafer 108 prior to scanning for inorganic contaminants, although the decomposition could also be used to detect certain organic contaminants. Alternatively or additionally, the system 100 can transition to a scanning configuration (as described herein, for example) without a prior decomposition procedure. For the decomposition configuration, the motor system 112 can move the wafer carrier 110 from the first position to the second position to position the wafer 108 adjacent to the second opening 128 of the projection 120 (as shown, for example, in Fig. 1B and Fig. 2B).In some implementations, chamber 102 includes an atomizer 138 positioned between the first opening 126 and the second opening 128 to spray a decomposition fluid onto the surface of the wafer 108 when the wafer carrier 110 is positioned at the second opening by the motor system 112. The atomizer 138 thus sprays the decomposition fluid directly into chamber 102. The decomposition fluid can be supplied to the atomizer 138 from the fluid handling system 106 via one or more fluid lines, such as through a tube 140 into a pre-chamber 142, which houses at least part of the atomizer 138. In some implementations, at least part of the atomizer 138 is located at least partially within a wall of chamber 102.For example, the chamber body 116 can define an opening 144 between the inner area 118 and the prechamber 142, at which an outlet of the atomizer 138 can release aerosolized decomposition fluid into the inner area between the first opening 126 and the second opening 128 in order to cover and decompose at least one upper surface 146 of the wafer 108. In implementations, the chamber 102 induces a pressure below the wafer 108 during decomposition to prevent decomposition fluid from passing between the edge of the wafer 108 and the projection 120. For example, the chamber 102 can include a gas outlet port 148 within the inner chamber 118, positioned between the second opening 128 and the lower part 124 of the chamber body 116, to supply a gas or other fluid to the inner chamber 118 during the supply of the decomposition fluid from the atomizer 138 to the inner chamber 118. The gas from the gas outlet port 148 can be supplied at a pressure greater than the pressure of the aerosolized decomposition fluid supplied by the atomizer 138 in order to provide an upward flow of the gas through the second opening 128 (e.g. between the edge of the wafer 108 and the projection 120) to prevent the passage of the decomposition fluid to the underside of the wafer 108.In implementations, the system 100 includes a control unit coupled to a gas source to supply gas from the gas source to the gas outlet port 148 during the feeding of the decomposition fluid to the surface 146 of the wafer 108 by the atomizer 138, when the wafer carrier 110 is in the second position. For example, the gas can be fed into the gas outlet port 148 via a fluid line through the tube 140 and the prechamber 142. In implementations, the motor system 112 induces rotation of the wafer carrier 110 during the decomposition procedure to cause the wafer 108 to rotate rapidly when the aerosolized decomposition fluid is present in the inner chamber 118. Through one or more channels in the chamber body 116, which are in fluid communication with one or more drains, the chamber 102 can allow the removal of fluids from the interior 118. Such fluids may include, for example, excess decomposition fluid, silicon tetrafluoride (SiF4), gas supplied through the gas outlet port 148, water, steam, rinsing fluids, or other fluids. For example, the chamber body 116 can comprise a base part 200, an intermediate part 202, and an upper part 204 (e.g., shown in Fig. 2B) stacked on top of each other (e.g., via interlocking grooves). The base part 200 can define one or more drains 206 (e.g., drains 206A and 206B) which, via drain pipes, provide an outlet from the interior 118 of the chamber 102 into one or more drain containers (not shown).In implementations, the drain 206A is fluidically coupled to channels in the chamber body 116 to provide access to the drain 206A for fluids located between the first opening 126 and the second opening 128. For example, the intermediate part 202 can define one or more channels 208, at least one part of which extends through the intermediate part to align vertically with at least one part of one or more channels 210 formed by the base part 200. The channels 208 can be positioned between an inner surface 212 of the chamber body 116 (e.g., the upper part 204, the intermediate part 202, or combinations thereof) and the projection 120 to allow fluids held in the inner area 118 between the cover 130 and the second opening 128 or the surface 146 of the wafer 108 to flow into the channels 208, through to the channels 210, and out of the drains 206A.In implementations, the processes 206B allow rinsing fluids or other fluids to exit from the interior 118 of chamber 102 during rinsing procedures (described herein with reference to Fig. 2C). Following the decomposition of wafer 108, or in implementations where prior decomposition is not desired, the system 100 can transition to a scanning configuration to allow the scan arm assembly 104 access to the surface 146 of wafer 108 without transferring the wafer 108 to a separate scanning system. For the transition to the scanning configuration, the motor system 112 can position the wafer carrier 110 from the second position adjacent to the second opening 128 to the first position adjacent to the first opening 126, or otherwise closer to the upper part 122 of the chamber body 116, to allow the scan arm assembly 104 access to the surface 146 of wafer 108. Alternatively, the motor system 112 can hold the wafer 108 near the upper part 122 after loading if no decomposition procedure is used for a particular scan. The scan arm assembly 104 generally comprises a rotatable arm carrier 300 coupled to a nozzle housing 302, which carries a nozzle 304 configured to supply scan fluid to and retrieve scan fluid from the surface 146 of the wafer 108. The motor system 112 can control the rotation of the rotatable arm carrier 300, the vertical positioning of the rotatable arm carrier 300, or combinations thereof, to position the nozzle housing 302 and the nozzle 304 from one or more positions at the rinsing station 114 (e.g., shown in Fig. 2A) to one or more positions adjacent to or above the wafer 108 (e.g., shown in Fig. 4). An exemplary implementation of the nozzle 304 is described below with reference to Figures 7A to 7D.In implementations, the rotatable arm carrier 300 rotates the nozzle 304 or moves it otherwise to position the nozzle 304 adjacent to the wafer 108 when the wafer carrier 110 is positioned at the first position by the motor system 112, and to position the nozzle 304 outside a path of the lid 130 from the open position to the closed position when the wafer carrier 110 is positioned at the second position by the motor system 112. When the nozzle 304 is located in the position adjacent to or above the wafer 108 (e.g., as shown in Fig. 4), the fluid handling system 106 can control the supply of scanning fluids to and from the nozzle 304 to enable scanning procedures of the surface 146 of the wafer 108. The scanning fluids can include, for example, one or more organic solvents for recovering organic contaminants from the wafer 108, one or more aqueous solutions for recovering inorganic contaminants from the wafer 108, or combinations thereof. An exemplary implementation of the nozzle 304 is shown with reference to Figs. 7A to 7D. The nozzle 304 is configured to distribute a fluid flow over the surface 146 of the wafer 108, thereby covering a larger surface area of ​​the wafer 108 in a shorter period of time than is possible by moving a pinpoint-sized droplet over the wafer 108.The fluid flow is directed through the nozzle 304 across the surface 146 of the wafer 108 to scan the desired surface area of ​​the wafer 108 in a controllable manner. In some implementations, the nozzle 304 directs the fluid flow across substantially the entire surface 146 during a single revolution of the wafer 108. In other implementations, a wedge-shaped portion of the surface 146 (e.g., a sector of the wafer 108 or a part thereof) can be scanned in a fraction of a single revolution of the wafer 108. The nozzle 304 comprises a nozzle body 500, which defines an inlet port 502, an outlet port 504, a first nozzle port 506, a second nozzle port 508, and a nozzle tip 510. The nozzle 304 may also include one or more mounting ports for mounting the nozzle 304 within the nozzle body 302.The inlet port 502 and the outlet port 504 accommodate fluid lines to direct the fluid flow into and out of the nozzle 304 during operation of the system 100. For example, the nozzle 304 receives fluid when a first pump (e.g., a syringe pump) forces the fluid from a holding line or loop (e.g., a sample holding loop) into the nozzle 304, where it is directed into the inlet port 502 and through a channel 503 in the nozzle body 500, which fluidically connects the inlet port 502 and the first nozzle port 506. The fluid is then applied to the surface 146 of the wafer 108 through the first nozzle port 506. The fluid is directed as a continuous fluid flow along the surface 146 of the wafer 108 via a channel 512, which is defined between the nozzle tip 510 and the nozzle body 500, and the fluid is subsequently removed from the surface 146 of the wafer 108.For example, the fluid can be removed from surface 146 by a second pump (e.g., a syringe pump) that draws the fluid through the second nozzle port 508 at the end of channel 512 distal to the first nozzle port 506, via a fluid connection between the outlet port 504 and the second nozzle port 508, through the nozzle body 500. This allows the fluid to come into contact with the wafer 108 during the transition from the first nozzle port 506 to the second nozzle port 508. Channel 512 allows a volume of fluid to move across the wafer with assistance from the nozzle tip 510. In implementations, channel 512 has a volume of approximately 300 µl. However, the volume of channel 512 is not limited to 300 µl and can include volumes of less than 300 µl and volumes of more than 300 µl.For example, the volume of the channel 512 can depend on the size of the wafer 108 processed by the system 100 in order to provide a desired amount of fluid (e.g., scanning fluid) to the surface 146. The length of the channel 512 can be selected based on the size of the wafer 108 to be processed by the system 100, with the channel 512 having a length approximately equal to the radius of the wafer 108 in some implementations. In some implementations, the length of the channel 512 can range from approximately 20 mm to approximately 500 mm. For example, the length of the channel 512 can be approximately 150 mm (e.g., to fit a 300 mm diameter wafer), approximately 100 mm (e.g., to fit a 200 mm diameter wafer), or approximately 225 mm (e.g., to fit a 450 mm diameter wafer). Depending on the type of scanning solution used, different nozzle designs and configurations may be used. The nozzle extension 510 extends from the nozzle body 500 adjacent to each of the first nozzle port 506 and the second nozzle port 508 and defines the channel 512 between the nozzle extension 510 and the nozzle body 500 between the first nozzle port 506 and the second nozzle port 508. The nozzle extension 510 may further extend such that it encompasses each of the first nozzle port 506 and the second nozzle port 508 within the channel 512, so that the nozzle extension 510 includes the first nozzle port 506 and the second nozzle port 508 within the nozzle extension 510 (as shown, for example, in Fig. 7C). In implementations, the nozzle body 500 comprises essentially opposing side walls 514 extending longitudinally across the nozzle 304. The opposing side walls 514 comprise tapered wall sections 516 that are coupled to or otherwise extend to opposite sections 518 to provide them.In implementations, the opposing parts 518 are substantially vertical to form at least part of the nozzle attachment 510. The nozzle 304 may be formed from a single unit piece, or parts of the nozzle 304 may be formed separately and joined or otherwise coupled together. In implementations, the nozzle 304 is formed from chlorotrifluoroethylene (CTFE), polytetrafluoroethylene (PTFE), or combinations thereof. The channel 512 of the nozzle 304 has an elongated shape with rounded ends 513A and 513B. Rounded ends can promote better fluid handling characteristics compared to angled ends, such as providing a more uniform distribution and intake of fluid by the nozzle 304. In implementations, the first nozzle port 506 (where the fluid is discharged from the nozzle 304 onto the wafer 108) is positioned tangentially to the edge of the rounded end 513A of the channel 512. Such positioning can facilitate a clean interruption of the fluid flow from the first nozzle port 506 after all the fluid has been delivered to the wafer 108, while preventing segmentation of the fluid on the surface of the wafer 108. In implementations, the rotatable arm carrier 300 rotates the nozzle housing 302 to cause the rounded end 513A of the nozzle 304 to extend beyond the edge of the wafer 108 (e.g.Following the scan procedure, the fluid handling system 106 is operated to facilitate the intake of the fluid flow through the second nozzle port 508. For example, as shown in Fig. 6, at a first time point (t1), the nozzle is positioned at a first position (e.g., a scan position), positioning the channel 512 above the surface 146. At a second time point (t2), the rotatable arm carrier 300 rotates the nozzle housing 302 to cause the rounded end 513A to extend beyond the edge of the wafer 108 in a second position rotated approximately 7 degrees relative to the first position (e.g., to protrude beyond the edge). In implementations, the second nozzle port 508 is positioned approximately in the middle of the rounded end 513B distal to the first nozzle port 506.Positioning the second nozzle port 508 in the center of the rounded end 513B, instead of tangentially to the edge of the rounded end 513B, can enable the intake of the fluid while simultaneously allowing the maintenance of the fluid flow on the surface 146 without segmentation of the fluid flow in order to precisely control the movement of the fluid over the surface 146 of the wafer 108. The position of the nozzle 304 above the surface 416 of the wafer 108 can influence the amount of fluid carried within the channel 512 during the scanning procedure. The system 100 can include a zero-adjustment procedure to ensure that a desired height above the surface 416 is reached before scanning fluid is supplied to the nozzle, thus enabling the desired amount of fluid to be directed through the nozzle tip 510 along the surface 146 of the wafer 108. An exemplary zero-adjustment procedure is shown with reference to Figures 8A to 8C, which illustrate aspects of the scan arm arrangement 104 according to various embodiments of this disclosure. The scan arm arrangement 104 enables the nozzle 304 to be aligned with respect to the wafer 108 such that the first nozzle port 506 and the second nozzle port 508 are leveled with respect to the surface 146 of the wafer 108, onto which the fluid is applied and from which it is removed.The system 100 can be subjected to an alignment or leveling procedure for each wafer 108 processed by the system 100 (e.g., between scanning a first wafer being removed from chamber 102 and scanning a second wafer being fed into chamber 102) or as required to ensure that the nozzle 304 is leveled with respect to the wafer 108 held by chamber 102, such as before the next scanning procedure. Generally, the nozzle 304 is movably coupled to a nozzle housing 302 to allow the nozzle 304 a degree of movement with respect to the nozzle housing 302 while it is supported by the nozzle housing 302. The nozzle housing 302 defines an opening 520 through which at least a part of the nozzle 304 can pass during the transition between an extended position (e.g. shown in Fig. 8A) and a retracted position (e.g. shown in Fig. 8B and Fig. 8C).For example, an upper part of the nozzle 304 can be positioned inside the nozzle housing 302, with additional parts of the nozzle 304 being fed into the interior of the nozzle housing 302 through the opening 520 when the nozzle 304 transitions from the extended to the retracted position. For example, when the nozzle 304 is positioned to contact a zero-level surface 522, the nozzle tip 128 can contact the surface 522 to press the nozzle 304 into a leveled position with respect to the surface 522. The nozzle housing 302 can then lock the position of the nozzle 304 to keep it level with respect to the surface 522 when the nozzle 304 is lifted from the surface 522 (e.g., into a scan position). The nozzle housing 302 can include a mechanical, electrical or electromechanical locking device to releasably secure the nozzle 304 in relation to the nozzle housing 302.In implementations, the surface 522 includes the surface 146 of the wafer 108, a surface of the wafer carrier 110 (e.g., before loading the wafer 108 onto the wafer carrier 110), a surface of the rinsing station 114, or another surface with a structure corresponding to the planar properties of a semiconducting wafer, such that when the nozzle 304 touches the surface 522, the nozzle tip 128, the first nozzle port 506, the second nozzle port 508, etc., are correctly positioned with respect to the wafer 108. In implementations, the nozzle assembly 500 includes the nozzle housing 302 to couple the nozzle 304 to the rotatable arm carrier 300. Alternatively or additionally, one or more different scan nozzles can be directly coupled to the rotatable arm carrier 300 or can utilize a different nozzle housing to enable coupling to the rotatable arm carrier 300. As shown, the nozzle 304 can be coupled to the nozzle housing 302 via a coupling element 524 that defines an opening 526 to interact with a projecting element 528 of the nozzle housing 302. The projecting element 528 can comprise a fastener, pin, or other structure with a width or diameter smaller than the width or diameter of the opening 526, such that when the scan arm assembly 104 is in a first state (e.g.,When the nozzle 304 is in a leveling state, the upper end of the opening 526 rests on the projecting element 528, thereby providing a lower or extended position of the nozzle 304 relative to the nozzle housing 302 via the coupling element 524 (as shown, for example, in Fig. 8A). The system 100 can implement an alignment or leveling procedure by causing the rotatable arm support 300 to lower the nozzle housing 302 to cause the nozzle 304 to contact the surface 522 (as shown, for example, in Fig. 8B). For example, when the nozzle 304 contacts the surface 522, the coupling element 524 is pushed upward relative to the projecting element 528, so that the projecting element 528 does not support the coupling element 524 by contacting the upper end of the opening 526.Following contact of the nozzle 304 with the surface 522, the nozzle 304 is in the retracted position, and the system 100 can actuate a locking structure 530 (which is, for example, integrated into the nozzle housing 302) to secure the position of the nozzle 304 relative to the nozzle housing 302. The coupling element 524 can, for example, comprise a ferrous material to be secured by a magnetic field generated by an electromagnet enclosed in the locking structure 530. Although an electromagnet is shown as part of the locking structure 530 in the exemplary embodiments, other locking structures can be used, including, but not limited to, pneumatic magnetic actuators, mechanical locks, electromagnetic locks, or the like. The nozzle housing 302 can include sensors to monitor the position of the nozzle 304 relative to the nozzle housing 302, such as determining whether the nozzle 304 is in the extended state, the retracted state, or another position. For example, in some implementations, the nozzle housing 302 includes a sensor 532 to detect the presence or absence of the coupling element 524 and to generate or cease generating a signal received by a control unit of the system 100. The sensor 532 can include an optical switch with a light source on a first side of the coupling element 524 and a detector on a second, opposite side of the coupling element 524. The coupling element 524 can include an indexing cutout, part of which passes between the light source and the detector of the sensor 532.When the nozzle 304 is in the extended position (e.g., the locking structure 530 is not engaged), light from the light source passes through the indexing cutout of the coupling element 524 and is detected by the detector on the other side of the coupling element 524. The sensor 532 then outputs a signal or stops outputting a signal, indicating the detection of the light and thus informing the system 100 that the nozzle 304 is in the extended position. When the nozzle 304 is in the retracted position, such as after leveling on the surface 522, the body of the coupling element 524 is positioned between the light source and the detector of the sensor 532, preventing the light from reaching the detector. The sensor 532 would output a signal or stop outputting a signal, indicating no detection of the light source.Such a signal, or its absence, indicates to system 100 that the nozzle 304 is in the retracted position (e.g., held in place by the locking structure 530 within the nozzle housing 302). Operation of the sensor 532 can provide a system check to ensure that the nozzle 304 remains in a retracted and leveled position after a period of operation. Changes in the output from the sensor 532 may indicate that releveling may be necessary, that the locking structure 530 should be checked, etc. Alternatively, the indexing cutout could be repositioned so that when the nozzle 304 is in the retracted position, the detector is aligned with the indexing cutout, and when the nozzle 304 is in the extended position, the body of the coupling element 524 blocks the light. When the nozzle 304 is leveled with respect to the surface 522 and locked in position by the locking structure 530, the rotatable arm carrier 300 can lift the nozzle 304 from the surface 522 (as shown, for example, in Fig. 8C) while holding the nozzle 304 in the leveled position. The rotatable arm carrier 300 can then position the nozzle 304 in a scan position or move the nozzle 304 in another way (for example, to allow a wafer 108 to be positioned on the wafer carrier 110 when the surface 522 used to level the nozzle 304 is the carrier 106). The nozzle housing 302 can include one or more sensors to enable the supply of fluid to and removal of fluid from the nozzle 304. For example, in some implementations, the nozzle housing 302 includes one or more sensors (sensors 534A and 534B are shown) adjacent to one or more of the inlet port 502 and outlet port 504 of the nozzle 304 to control the operation of the fluid handling system 106 in order to control the fluid flow into and out of the nozzle 304. The sensors 534A and 534B can include an optical sensor, a capacitive sensor, an ultrasonic sensor, or another sensor or combination thereof to detect the flow or absence of a fluid within the fluid lines of the system 100.For example, the system can include 100 fluid lines from the fluid handling system, coupled to fluid line coupling elements 536A and 536B, through which sensors 534A and 534B can each detect the presence or absence of fluid therein. Output signals, or their absence, can control the operation of one or more components of the fluid handling system 106, including, but not limited to, pumps used to supply fluid or remove fluid from the nozzle 304. System 100 enables rinsing procedures for the wafer 108 and the nozzle 304, such as following scan procedures. Referring to Fig. 2C, chamber 102 is shown in a rinsing configuration to facilitate rinsing the wafer 108. To transition to the rinsing configuration, the motor system 112 can position the wafer carrier 110, starting from the first position adjacent to the first opening 126 (e.g., the scan position) or from another position, in a rinsing position between the projection 120 and the lower part 124 of the chamber body 116. A rinsing fluid can be supplied to the wafer 108, for example, through a rinsing port on the nozzle housing 302 or otherwise provided within system 100, and the motor system 112 can rapidly rotate the wafer 108 to induce the removal of the rinsing fluid.The rinsing fluid can then impinge on the interior of the chamber body 116 and flow to the drains 206B to exit from the interior area 118 of the chamber 102. To clean the nozzle 304, the rotatable arm support 300 can position the nozzle 304 relative to one or more channels of the rinsing station 114. For example, the rinsing station 114 can include a first channel 115A (shown, for example, in Fig. 5) which has an elongated channel to which rinsing fluid is supplied from a rinsing fluid source to interact with the nozzle tip 510, the channel 512, or other parts of the nozzle 304. In Figs. 1A and 1B, the nozzle 304 is shown positioned in the first channel 115A. The rinsing station 114 can also include a second trough 115B, which has an elongated channel coupled to a drying gas source (e.g., nitrogen or another inert gas) to supply a drying gas to the elongated channel for impingement on the nozzle 304. In Fig.Figure 5 shows nozzle 304 positioned in the second groove 115B. With reference to Figures 9A to 10, an exemplary fluid handling system 106 of the system 100 according to various embodiments of this disclosure is now described. The fluid handling system 106 can, for example, enable the preparation of chemical blanks of chemicals used by the system 100 for analysis by an analytical system, enable the preparation of decomposition fluids as required and according to desired ratios for use in the chamber 102, enable the preparation of scanning fluids as required and according to desired ratios for use in the chamber 102, and combinations thereof. As shown, the fluid handling system 106 includes a pumping system comprising pumps 600, 602, 604, 606, 608, 610 and 612 to draw and push fluids through the fluid handling system to interact with other components of the system 100 (e.g., the nozzle 304), analysis systems and the like.The pump system shown includes syringe pumps; however, the system can utilize 100 different pump types or systems, combinations of pump types or systems, and the like. An exemplary configuration of the fluid handling system 106 for supplying a decomposition fluid to the atomizer 138 of chamber 102 during the decomposition procedure of the wafer 108 is shown in Fig. 10. The pump 612 can draw hydrofluoric acid (HF) or one or more other decomposition fluids from a decomposition fluid source 613 into a holding line (e.g., a decomposition fluid holding loop 614), wherein a valve 616 is located in a first configuration and a valve 618 is located in a first configuration.In a second configuration of the valve 616, gas from a gas source 619 can be supplied to the fluid line holding the decomposition fluid to provide a barrier to a working fluid, which is used to force the decomposition fluid to the atomizer 138. In a second configuration of the valve 618, the pump 612 can draw in a working solution (e.g., deionized water or another fluid), with the valve 618 being able to switch to the first position and the valve 616 being able to switch to a third configuration to provide a fluid connection between the pump 612 and the atomizer 138, whereby the pump 612 forces the working solution against the decomposition fluid held in the decomposition fluid holding loop 614 (e.g., across any intervening air gap) to supply the decomposition fluid to the atomizer 138. Following the decomposition of wafer 108, system 100 can scan wafer 108 to determine impurities.With reference to Fig. 9A, the fluid handling system 106 is shown in an exemplary chemical loading configuration. In a first configuration, pumps 604, 606, and 608 draw chemicals from chemical sources 620, 622, and 624, respectively, via a valve 626. The chemicals may include, for example, hydrofluoric acid (HF), hydrogen peroxide (H₂O₂), deionized water (DIW), one or more organic solvents, or other fluids. In a second valve configuration (shown in Fig. 9A) of the valve 626, each of the pumps 604, 606, and 608 is fluidically connected to a fluid line connector (e.g., a manifold 628 or other connector), thereby combining the chemicals drawn in by each pump and allowing them to mix. The combined fluids are directed to a valve 630, which in a first valve configuration directs the combined fluids to a holding line (e.g. a holding loop 632).In implementations, a system control unit independently manages the operation of each of the pumps 604, 606, and 608 to control the flow rate of each fluid handled by the respective pumps, thereby providing a controlled composition of the mixed fluids that, after mixing, are directed to the holding loop 632. In implementations, a first fluid mixture can be used to interact with the wafer 108 during a first scan procedure, and a second fluid mixture can be prepared on demand with separate operational control of the pump systems 604, 606, and 608 to supply the second fluid mixture for interaction with the wafer 108 during a second scan procedure. Additional fluid mixtures can be prepared on demand and supplied to the wafer 108 as required.In implementations, the holding loop 632 has a volume sufficient to support scanning procedures for multiple wafers without the need for refilling. For example, the scanning solution can be prepared, and a portion of it (e.g., a "blank" sample) can be sent to an analytical system to verify that the solution is within operational limits for use on wafers. The remainder of the scanning solution in the holding loop 632 can then be used for multiple scanning procedures, with the scanning solution having been pre-verified as suitable for use. An example of loading a chemical blank sample for analysis is shown with reference to Fig. 9B. With reference to Fig. 9B, the fluid handling system 106 is shown in an exemplary nozzle bypass configuration for sending a chemical blank sample for analysis without the blank sample passing through the nozzle 304. In the nozzle bypass configuration, the pump 610 is in fluid communication with the holding loop 632 (e.g., with the valve 630 in a second valve configuration) to force the fluid held in the holding loop 632 through a valve 636 in a first valve configuration and a valve 638 in a first valve configuration to a sample holding line (e.g., a sample holding loop 634). When the fluid in the sample holding loop 634 is isolated, the fluid handling system 106 can switch to a sample injection configuration to transfer the sample to an analytical system for analysis.The analytical system may, but is not limited to, include inductively coupled plasma spectrometry instruments for determining trace element composition, ionization sources enabling analysis of organic chemicals (e.g., electrospray, atmospheric pressure chemical ionization (APCI), or other ionization sources), or the like, or combinations thereof. With reference to Fig. 9C, the fluid handling system 106 is shown in an exemplary chemical injection configuration, wherein the holding loop 632 is fluidically connected to one or more transfer mechanisms. In one implementation, for example, the valve 638 is located in a second configuration (shown as a dashed line in Fig. 9C) to fluidically couple the holding loop 632 to a gas transfer source (e.g., a nitrogen pressure source 640) in order to force the sample held in the holding loop 632 via a valve 644 in a first valve configuration and a valve 646 in a first valve configuration to a transfer line 642 to an analytical sample system. In another implementation, the valve 638 is located in a third valve configuration (shown as a solid line in Fig. 9C) to fluidically couple the holding loop 632 via a valve 648 in a first valve configuration (shown as a solid line in Fig. 9C).9C (shown as a solid line) to be fluidically coupled to the pump 602, which pushes the sample held in the holding loop 632 via the valve 644 in the first valve configuration and the valve 646 in the first valve configuration to the transfer line 642 to the analytical sample system. The pump 602 can use a working solution (e.g., deionized water from a DIW source 650) to push the sample towards the transfer line 642. In some implementations, the fluid handling system 106 introduces a fluid gap between the working fluid and the sample before the working solution is injected, for example by introducing a bubble (e.g., from the nitrogen pressure source 640) to the holding loop 632. In some implementations, the fluid handling system 106 includes a sensor 652 adjacent to the transfer line 642 to detect the presence or absence of fluid in the transfer line 642.For example, the sensor 652 can detect the rear end of the sample ejected from the holding loop 632 (e.g., by detecting a bubble in the line), whereby the sensor signal, or its absence, can indicate to a control unit of the fluid handling system 106 to switch the configurations of the valves 646 and 648 to second valve configurations (shown as dashed lines in Fig. 9C) in order to fluidically connect the pump 602 to the transfer line 642 via a fluid line 654. In such a configuration, the other parts of the fluid handling system 106 are isolated from the transfer of the sample to the sample analyzer to allow these other parts to be flushed during the sample transfer. With reference to Fig. 9D, the fluid handling system 106 is shown in an exemplary nozzle loop loading configuration, wherein the holding loop 632 is in fluid communication with a nozzle holding line (e.g., a nozzle holding loop 656) to prepare the supply of the fluid to the nozzle 304. As described herein, the composition of the fluid can depend on the type of contaminants to be recovered from the wafer 108, whereby organic solvents or solutions can be used to recover organic contaminants, aqueous or acidic solutions can be used to recover inorganic contaminants, or combinations thereof. In the nozzle loop loading configuration, the pump 610 is in fluid communication with the holding loop 632 (e.g.,(with valve 630 in the second valve configuration) to push the fluid held in the holding loop 632 via valve 636 in a second valve configuration and valve 658 in a first valve configuration to the nozzle holding loop 632. In implementations, the nozzle holding loop 632 has a volume of approximately 500 µl, while the holding loop 632 has a volume of approximately 5–20 ml to allow filling of the nozzle holding loop 632 for each scan solution prepared by the operation of pumps 604, 606, 608. When the fluid in the nozzle holding loop 656 is isolated, the fluid handling system 106 can switch to a nozzle loading configuration to transfer the fluid to nozzle 304 for a scanning procedure of the wafer 108 or to take a nozzle blank sample (e.g., to test the fluid for other purposes).to introduce the sample to an inert surface, such as a surface of the rinsing station 114, and to remove the sample from the inert surface for analysis). Referring to Fig. 9E, the fluid handling system 106 is shown in an exemplary nozzle loading configuration, wherein the pump 600 is in fluid communication with the nozzle holding loop 656 and the nozzle 304 via the valve 658 in a second valve configuration to push the fluid from the nozzle holding loop 656 to the nozzle 304. In implementations, the wafer 108 is held stationary during scanning procedures while the nozzle 304 is loaded by the pump 600. In implementations, the system 100 performs a zeroing operation of the nozzle 304 (described, for example, with reference to Figs. 8A to 8C) before the nozzle 304 is filled with the fluid.The nozzle is then placed in the scan position above the wafer 108, and the pump 600 can be operated to force the fluid from the nozzle holding loop 656 to the inlet port 506 of the nozzle 304, through the nozzle body 500 to the first nozzle port 506, and onto the surface 146 of the wafer 108 (or, for the analysis of nozzle blanks, onto the inert surface). In implementations, a control unit of the fluid handling system 106 controls the operation of the pump 600 based on detection signals, or the absence thereof, from the sensors 534A or 534B, which detect the presence or absence of fluid supplied to or exiting the nozzle 304, indicating a filled nozzle 304. In implementations, the detection of the front end of the fluid by the sensor 534A causes the pump 600 to reduce the flow rate of the fluid supplied to the nozzle 304 (e.g.from a flow rate of approximately 50 µl / min to a flow rate of 10–20 µl / min). In implementations, the pump 600 is operated to fill the nozzle 304 until the tail end of the fluid is detected by the sensor 534B. The pump 600 can then be operated for a period of time to force the tail end of the fluid into the nozzle 304 and then ceases operation, positioning all the fluid previously held by the nozzle retaining loop 656 on the surface 146 of the wafer 108 (or on the inert surface if a nozzle blank is performed). The fluid is then carried by the nozzle 304 on the surface 146. In implementations, some of the fluid may protrude from the nozzle tip 510 but may be kept in contact with the rest of the fluid within the channel 512, for example by adhesion forces. Then the system 100 proceeds to scan the nozzle 304 over the surface 146 of the wafer 108.During the scanning procedure, the motor system 112 rotates the wafer 108 (e.g., at approximately 2 rpm), thereby transferring the fluid carried by the nozzle 304 across the surface 146 of the wafer 108. In implementations, the fluid interacts with substantially the entire surface 146 of the wafer 108 during a single rotation, although additional rotations can be performed. For example, the scanning procedure can be accompanied by two rotations of the wafer 108 by the motor system 112 to allow the fluid to come into contact with the entire surface of the wafer 108 twice. Following scanning, the nozzle can be rotated to cause one end of the nozzle to extend beyond the edge of the wafer (as described, for example, with reference to Fig. 6), such as to assist in the uptake of fluid from the surface into the nozzle 304 via the second nozzle port 508. With reference to Fig. 9F, the fluid handling system 106 is shown in an exemplary extraction configuration, wherein the pump 602 is connected to the nozzle 304 via the valve 648 in the first configuration, the valve 638 in the third configuration, and the valve 644 in a second configuration. In the extraction configuration, the pump 602 is operated to draw the fluid from the surface 146 of the wafer 108 through the second nozzle port 508 and out of the nozzle 304 via the outlet port 504, drawing the fluid into the sample holding loop 634. Alternatively or additionally, a single port on the nozzle can be used to supply fluid to the wafer 108 and to extract fluid from the wafer following or during scanning. A sensor (e.g. a sensor 660) can be used to control the operation of the pump 602, similar to controlling the pump 600 by an output from the sensors 534A / 534B.For example, the sensor 660 can detect the trailing end of the fluid flowing into the sample holding loop 634, which can signal the pump 602 to stop operation (e.g., via a control unit of the fluid handling system 106). Once the fluid is held in the sample holding loop 634, the fluid handling system 106 can switch to the chemical injection configuration described with reference to Fig. 9C to supply the fluid to the sample analyzer via the transfer line 642. In implementations, the sample holding loop 634 has a larger volume (e.g., 1.5 ml) than the volume of fluid supplied to the nozzle 304 (e.g., 500 µl) to allow complete fluid recovery following scanning. Detection of organic contaminants without VPD While VPD techniques can be appropriate for detecting and identifying metallic impurities, there can be significant limitations when using conventional VPD techniques to recover and identify organic contaminants or residues present in or on semiconductor wafers that may interfere with semiconductor processing. For example, plasticizers such as dibutyl phthalate and dioctyl phthalate can slow the growth of silicon dioxide. Organophosphates can cause unintended doping. Amines can neutralize photochemically generated acids. Antioxidants such as butylated hydroxytoluene and butylated hydroxyanisole can degrade gate-oxide structures on a wafer. Surfactants such as cetrimonium bromide and sodium dodecyl sulfate can impart hydrophilicity to wafers.Decomposition fluids used in conventional VPD techniques can break down or otherwise react with organic molecules, thus preventing the identification of the original contaminants and the determination of their concentrations on the semiconducting wafer. Furthermore, certain analytical systems used in VPD systems do not allow for the recovery and identification of organic contaminants or residues. For example, inductively coupled plasma systems used in the identification of metallic impurities can prevent the identification of the arrangement of elements present in the organic sample, such an arrangement would be used to determine the corresponding identity of the original organic molecule. Figures 11A to 12 illustrate aspects of an automated system for the recovery and identification of organic contaminants, such as organic residues, on semiconductor wafers (“System 1100”) according to various embodiments of this disclosure. In implementations, System 1100 is operated to recover organic contaminants without applying a VPD step to the semiconductor wafers. System 1100 generally comprises a scan nozzle 1102 configured to deliver a scan solution 1104 to the surface of a semiconducting wafer 1106 to recover organic contaminants (e.g., organic contaminants 1108, 1110 shown) from the semiconducting wafer 1106 for transfer to an analysis system 1112 to identify and / or quantify the organic contaminants.System 1110 may share one or more structures, functions, or features with System 100 described herein. For example, nozzle 1102 may include nozzle 304 or features thereof; it may have a different structure, function, or feature, or combinations thereof; fluid paths between components may be the same, similar, or different; the scanning techniques described herein may be enabled by chamber 102, by a different structure, by a structure that shares one or more features with it, or the like. The semiconducting wafer 1106 shown in Fig. 11A has two different organic contaminants (shown as 1108 and 1110) on one surface of the semiconducting wafer 1106. As described herein, various organic materials can have adverse effects on the semiconductor fabrication process and on the suitability of the semiconducting wafer 1106 for further incorporation into electronic devices. The system 1100 can be used to recover each of the organic contaminants and to differentiate between the identity and quantity of each organic contaminant. Such identification can provide information about a source of organic contamination for a semiconductor process, such as determining whether a solvent can leach contaminants from a container in which the solvent is stored. Referring to Fig. 11B, the system 1100 is shown with the scan nozzle 1102, which supplies the scan solution 1104 to the semiconducting wafer 1106 in order to draw the organic contaminants 1108 and 1110 into the scan solution 1104 (e.g. by dissolution or other mechanisms). The positioning of the scan nozzle 1102 can be manipulated by the scan arm arrangement 104 described herein to move the scan nozzle 1102 relative to the semiconducting wafer 1106 in order to supply the scan solution 1104 to one or more surfaces of the semiconducting wafer 1106 or parts thereof, wherein one or more pumps can be fluidically coupled to the nozzle 1102 to supply fluids to the scan nozzle 1102 and the surfaces of the semiconducting wafer 1106 or to remove fluids from the semiconducting wafer 1106 through the nozzle 1102. For example, one or more parts of the pump system (e.g.,Pumps 600, 602, 604, 606, 608, 610 and 612) are used to draw and push fluids through the nozzle 1102, the analysis system 1112 and the like. Organic solvents can exhibit a relatively high vapor pressure under ambient conditions, causing them to evaporate over time. This results in less liquid solvent being available to interact with contaminants present on the semiconducting wafer 1106. Alternatively, or additionally, due to the relatively low surface tension of the fluids, organic solvents tend to spread across the surface of the semiconducting wafer 1106. This causes portions of the scan solution to spread from the region below the scan nozzle onto the surface, away from the normal control by the nozzle 1102.In implementations, the system 1110 includes an organic scan solution replenishment system to enable the supply of organic scan solutions to the semiconducting wafer 1106 while maintaining suitable amounts of the organic scan solutions for manipulation by the scan nozzle 1102. For example, with reference to Fig. 11C, the system 1110 is shown to include an organic scan solution replenishment system 1118 to supply organic scan solutions to the nozzle 1102 to replenish amounts of organic solvent in the scan solution as the organic solvent evaporates (e.g., shown diagrammatically as 1120) or spreads on the semiconducting wafer 1106. The system 1118 shown for replenishing with organic scan solution generally comprises a scan solution reservoir 1122, a pump 1124, and corresponding fluid lines 1126 to fluidically couple the scan solution reservoir 1122 to the nozzle 1102. The scan solution reservoir 1122 can be any suitable container for holding a portion of the organic scan solution for subsequent transfer to the nozzle 1102 to replenish the amount of scan solution positioned below the scan nozzle 1102 for movement across the semiconducting wafer 1106. In implementations, the scan solution reservoir 1122 is a closed container to prevent evaporation of the organic scan solution from the reservoir 1122. The scan solution container 1122 is fluidically coupled to the nozzle 1102 via the fluid lines 1126, through which the pump 1124 can transfer the scan solution held within the scan solution container 1122 to the nozzle 1102.The pump 1124 may comprise a peristaltic pump, a syringe pump, another type of pump, or combinations thereof, suitable for transferring the scan solution held within the scan solution reservoir 1122 to the nozzle 1102 to replenish organic scan solution that has evaporated or otherwise spread from a surface of the semiconducting wafer 1106 located below the nozzle 1102 under control. In implementations, the pump 1124 is controlled to transfer the scan solution held within the scan solution reservoir 1122 to the nozzle 1102 via the fluid lines 1126 at a substantially constant flow rate. For example, the pump 1124 may continuously transfer scan solution to the nozzle 1102. The rate of transfer from pump 1124 generally depends on the composition of the organic scan solution, with pump 1124 being able to provide higher flow rates for more volatile organic solvents.Alternatively or additionally, the system 1110 can include one or more sensors to determine a volume of scan solution manipulated by the nozzle 1102, wherein, if it is determined that the volume is at or below a threshold volume, the system 1110 can activate the pump 1124 to transfer a refill scan solution (e.g. for a predetermined time until it is determined that the volume is above the threshold volume, or the like). After the organic scan solution has been allowed to interact with the surface of the semiconducting wafer to draw organic contaminants or residues into the scan solution, the scan nozzle 1102 can then draw the scan solution from the semiconducting wafer 1106, containing the organic contaminants 1108 and 1110 in the scan solution (e.g., shown as 1114), as shown in Fig. 11D. For example, the system 1100 can include a pump fluidically coupled to the scan nozzle 1102 to draw the scan solution containing the organic contaminants 1114 into the scan nozzle 1102 or an associated fluid line for subsequent transfer to the analysis system 1112. Fig. 11E shows, for example, the transfer of the scan solution, which includes the organic contaminants 1114, from the scan nozzle 1102 via a transfer line 1116 to the analysis system 1112. The analysis system 1112 can be a time-of-flight (TOF) mass spectrometer (e.g.,a quadrupole TOF-MS (Q-TOF-MS)), a triple quadrupole (triple quad or QQQ) mass spectrometer, a gas chromatography-mass spectrometry (GC-MS) system, a gas chromatography-flame ionization detector (GC-FID) or another analytical system used to analyze organic molecules, or combinations thereof. In one implementation, the 1112 analyzer of the 1100 system includes a Q-TOF-MS calibrated using a standard addition (MSA) calibration. The quantification methodology of the 112 analyzer can depend on whether the detected contaminant is part of the calibration standard used for the MSA calibration. For example, if the detected contaminant is part of the calibration standard used for the MSA calibration, the Q-TOF-MS can be operated in full-quant analysis mode. If the detected contaminant is not part of the calibration standard used for the MSA calibration, the Q-TOF-MS can be operated in near-quant analysis mode. Operating Q-TOF-MS in near-quant analysis mode can, for example, involve using a response factor (RF) for an organic compound that has similar properties (e.g., polarity, functional groups, molecular weight, etc.).) as the detected contaminant exhibits. In an exemplary experiment, an analysis was performed using the System 1100 to determine the collection and analysis of several organic contaminants from a semiconducting wafer. During the analysis, a sample of isopropyl alcohol (IPA) was spiked with twenty-four contaminants, each with a concentration of 10 parts per billion (ppb). The contaminants included bromide, phosphate, ethyl isopropylamine, diethanolamine, heptylamine, diethylaminoethanol, tripropylamine, tributylamine, sodium dodecyl sulfate, aminopropanol, L-proline, trimethylglycine, L-leucine, bisethylhexyl phosphate, tributyl phosphate, trischlorophenyl phosphate, triphenyl phosphate, trisethylhexyl phosphate, dibutyl phthalate, butylbenzyl phthalate, dioctyl phthalate, diisononyl phthalate, diisodecyl phthalate, and tris(2,4-ditert-butylphenyl) phosphate (e.g., a potential contaminant for IPA stored in a high-density polyethylene (HDPE) container).A 1 ml quantity of spiked IPA was applied as small droplets to the semiconductor wafer at various locations on the wafer surface. The IPA was allowed to evaporate, leaving the contaminants as a residue on the wafer surface. The wafer surface was then scanned with an organic scan solution to dissolve the residue. The scan solution containing the contaminants was collected and transferred to an analytical system for identification and quantification of the contaminant recovery. Figure 12 shows the results of the organic contaminant recovery from the wafer following analysis by the analytical system (e.g., a Q-TOF-MS system). Collecting and combining multiple scan samples Figures 13 and 14 illustrate aspects of a system for collecting and combining multiple scans of a semiconducting wafer (“System 1300”) according to various embodiments of this disclosure. The System 1300 shown generally comprises a nozzle 1302 and a collection vessel 1304, which is fluidically coupled to an analysis system 1306. The System 1300 may share one or more structures, functions, or features with the System 100 and / or System 1100 described herein.For example, nozzle 1302 may include nozzle 304 and / or nozzle 1102 or features thereof; it may include a different structure or function or a different feature or combinations thereof; fluid paths between components may be the same, similar or different; the scanning techniques described herein may be enabled by chamber 102, by a different structure, by a structure that shares one or more features with it, or the like. The nozzle 1302 is configured to feed a scan solution to the semiconducting wafer (e.g., wafer 108, wafer 1106, etc.), perform a scan procedure by moving the scan solution relative to one or more surfaces of the wafer, and remove the scan solution from the wafer. For example, fluid handling by the nozzle 1302 can be enabled by operating one or more fluid pumps (e.g., syringe pumps, peristaltic pumps, or the like). The scan solution is transferred from the nozzle 1302 to the collection vessel 1304 to be contained within its internal volume until one or more additional scan solutions are transferred from the nozzle 1302 (or a different nozzle) to the collection vessel 1304 to be collected and combined with the first scan solution.For example, nozzle 1302 can feed a first scan solution to the wafer, perform a first scan procedure, remove the first scan solution from the wafer as a first scan sample 1308, and transfer the first scan sample 1308 to the collection vessel 1304. The system 1300 can then enable a second scan, whereby nozzle 1302 (or a different nozzle) feeds a second scan solution to the same wafer, performs a second scan procedure, removes the second scan solution from the wafer as a second scan sample 1310, and transfers the second scan sample 1310 to the collection vessel 1304 so that it is combined with the first scan sample 1308. The system 1300 can further enable additional scans for combination with the other scans (e.g.,Optionally, one or more additional scan samples 1312 can be added to the collection vessel 1304 to be mixed with the other existing samples, such as the first scan sample 1308 and / or the second scan sample 1310. The collection vessel 1304 then provides a combined scanned sample 1314 within its interior for transfer to the analysis system 1306. The collection vessel 1304 can be provided in a variety of configurations suitable for holding a variety of scan samples. For example, the collection vessel 1304 can, but is not limited to, comprise a tubular structure, a tubular structure with a conical or angled bottom, a laboratory tube or vial, a section of fluid tubing configured to mix collected samples, a sample bottle, or the like, or combinations thereof. For example, the collection vessel 1304 shown in Fig. 14 is provided as a tubular structure 1400 having a conical or angled bottom 1402 with an outlet line 1404 fluidically coupled to a valve 1406. The valve 1406 can change its configuration to restrict fluid flow from the collection vessel 1304 (e.g., by opening or closing it).during a sample collection procedure, to receive a variety of scan samples from the nozzle(s) 1302, or to allow the transfer of the combined scan sample 1314 to the analysis system 1306. In implementations, the collection vessel 1304 includes a vent port 1408 to allow the release of gases from the collection vessel 1304 to the environment or the supply of gases from the atmosphere to the collection vessel 1304. The System 1300 can combine multiple scans into a single scan sample to improve sample recovery efficiency. For example, instead of relying on a single scan to collect all contaminants of interest from the wafer (e.g., wafer 108), the System 1300 can use a first scan solution to recover an initial portion of the contaminants or residues present on the wafer (e.g., 80% of the contaminants in a single scan). The System 1300 can then use the same or a different scan solution for a second scan to recover a portion of the remaining contaminants on the same wafer (e.g., 80% of the remaining 20% ​​of contaminants in a second scan). One or more additional scans can be performed to target even more potential residual contaminants.The System 1300 can utilize multiple scans to target different types of contaminants using one or more scan solutions or combinations thereof, including but not limited to polar organic solvents, nonpolar organic solvents, aqueous solutions (e.g., acidic solutions, basic solutions, neutral solutions, etc.), or the like. These contaminants include, but are not limited to, polar molecules, nonpolar molecules, metallic contaminants, ionic contaminants, or combinations thereof. The Collection Vessel 1304 allows for the combination and mixing of scans using the same or different scan solutions to provide a complete recovery profile of contaminants from the wafer. Following the collection of two or more scans in the collection vessel 1304, the system 1300 enables the transfer of the combined scan sample 1314 to the analysis system 1306 for the identification and / or quantification of the contaminants. For example, the system 1300 can utilize one or more pumps or vacuum sources to draw or push the combined scan sample 1314 from the collection vessel 1304 through one or more fluid lines (e.g., a fluid line 1410) and through the valve 1406 to the analysis system. The analysis system 1306 can include one or more detectors used to process the combined scan sample 1314 or parts thereof.For example, the analysis system 1306 may include one or more of the following analytical systems: a time-of-flight (TOF) mass spectrometer, a triple quadrupole (triple quad or QQQ) mass spectrometer, a gas chromatography-mass spectrometry (GC-MS) system, a gas chromatography-flame ionization detector (GC-FID), or another analytical system used for the analysis of organic molecules, an ICP spectrometry instrument (e.g., an inductively coupled plasma mass spectrometer (ICP / ICP-MS), an inductively coupled plasma atomic emission spectrometer (ICP-AES), or the like), or another analytical system used for the analysis of metals, or combinations thereof. Inline generation of organic scan solutions With reference to Figures 15 and 16, a system for the inline generation of organic scan solutions and internal standards for the analysis of organic contaminants that may be present on a semiconductor wafer (“System 1500”) is shown according to various embodiments of this disclosure. As further described herein, the scan fluid may comprise an organic scan solution formed on demand by the inline mixing of a plurality of organic solvents by pumps under the control of a system control unit to precisely control the ratio of organic solvents. Alternatively or additionally, a plurality of calibration standards may be prepared using the organic solvents to calibrate an instrument for organic analysis. The system 1500 shown in Fig. 15 generally comprises a nozzle 1502 and a pump system 1504, which is fluidically coupled to the nozzle 1502 via a valve system 1506 and to a plurality of sources of organic chemicals 1508 (e.g., via one or more fluid lines 1510). The nozzle 1502 may include one or more nozzles, such as the nozzle 304, the nozzle 1102, the nozzle 1302, a point nozzle to generate a droplet on the semiconducting wafer, a nozzle with one or more elongated channels to generate a stream of scan solution over the semiconducting wafer, or the like. The sources of organic chemicals 1508 include, but are not limited to, organic solvents, chemical standards, or other chemicals used to form organic scan solutions or calibration standards, such as diluents, aqueous solutions, or the like, for combination with one or more organic chemicals. In implementations, the system 1500 includes a control unit 1512 that controls and coordinates the operation of the pump system 1504 and the valve system 1506 to draw a variety of organic solvents or chemical standards from the organic chemical sources 1508 and feed the variety of organic solvents together to form an organic scan solution, or to feed one or more chemical standards with one or more organic solvents or diluents to form a calibration standard. The fluids can be fed to mix within one or more valves of the valve system 1510 (e.g., via one or more mixing ports of a multi-port valve or multiple multi-port valves), can be fed to mix within a multi-port mixing manifold, can be fed to another mixing device, or combinations thereof. The mixed organic fluids can then be transferred to the nozzle 1502 for delivery to the semiconductor wafer 108 for the scanning procedure. For example, the control unit 1512 can coordinate the operation of the pump system 1504 and the valve system 1506 to transfer the mixed organic scan solution or the mixed calibration standard to the nozzle 1502, with one or more of the scan arm assembly 104 and the motor system 112 inducing relative motion between the nozzle 1502 and the semiconductor wafer 108 to move the mixed organic scan solution across the surface of the semiconductor wafer 108. Following or during the scanning procedure, the nozzle 1502 retrieves the mixed organic scan solution from the wafer 108 and directs the sample to an analysis system 1514.The Analytical System 1514 can incorporate one or more time-of-flight (TOF) mass spectrometers, triple quadrupole (triple quad or QQQ) mass spectrometers, gas chromatography-mass spectrometry (GC-MS) systems, gas chromatography-flame ionization detectors (GC-FID), or other analytical systems used for organic molecule analysis; ICP spectrometry instruments (e.g., inductively coupled plasma mass spectrometers (ICP / ICP-MS), inductively coupled plasma atomic emission spectrometers (ICP-AES), or the like); or other analytical systems used for metal analysis, or combinations thereof. In some implementations, a range of mixed calibration standards can be transferred directly to the Analytical System 1514 to generate calibration curves for the analysis of samples provided by inline-generated organic scan solutions. An exemplary implementation of the system 1500 is shown in Fig. 16, wherein the pump system 1504 comprises a plurality of syringe pumps (shown are syringe pumps 1504A, 1504B, 1504C, 1504D, 1504E, 1504F) in fluid connection with a multi-port valve 1506A of the valve system 1506. The syringe pumps are fluidically coupled to the sources of organic chemicals 1508 to draw organic solvents or standard solutions into the respective syringe pumps (e.g., during a syringe loading procedure under the control of the control unit 1512) and then deliver the organic fluids (e.g., under the control of the control unit 1512) to the valve 1506A for mixing. The mixed organic fluid is then transferred to the nozzle 1502, several nozzles 1502 or one or more detectors of the analysis system 1514.In implementations, the valve 1506A includes a mixing port 1600 configured to mix two or more fluids from two or more syringe pumps to provide the mixed organic fluid. For example, the valve 1506A may include internal fluid channels 1602 on one or more of the rotor or stator to direct fluid received at two or more ports (e.g., coupled to fluid lines) to a single mixing port 1600 or an internal channel fluidically coupled to it, in order to combine and mix the multiple received fluids in a fluid channel 1604 and / or fluid line 1606 coupled to the mixing port.Alternatively or additionally, the valve system 1506 includes one or more mixing distributors for receiving two or more fluid streams from the syringe pumps to allow the streams to mix in order to provide the mixed organic scan solution or the mixed calibration standards. For example, the mixed organic scan solution or standard solution can be transferred to the nozzle 1502 and / or the analyzer 1514 by operating a valve 1506B of the valve system 1506. Electromechanical devices (e.g., electric motors, servos, actuators, or the like) may be coupled to or embedded within the components of the systems described herein (e.g., systems 100, 1100, 1300, 1500, or combinations thereof) to enable automated operation via control logic embedded in or externally controlling the systems. The electromechanical devices may be configured to effect movements of devices and fluids according to various procedures, such as those described herein. The systems may include or be controlled by a computing system comprising a processor or other control unit configured to receive computer-readable program instructions (i.e., the control logic) from a non-transient carrier medium (e.g.,a storage medium, such as a flash drive, a hard disk drive, a solid-state drive, an SD card, an optical disc, or the like). The computing system can be connected to various components of System 100 either by a direct connection or by one or more network connections (e.g., local area network (LAN), wireless area network (WAN or WLAN), one or more hub connections (e.g., USB hubs), and so on). For example, the computing system can be communicatively coupled to Chamber 102, Motor System 112, valves described herein, pumps described herein, other components described herein, components that control them, or combinations thereof. The program instructions, when executed by the processor or another control unit, can cause the computing system to control the systems (e.g.,Controls control pumps, selection valves, actuators, spray nozzles, positioning devices, etc.) according to one or more operating modes as described herein. It should be acknowledged that the various functions, control operations, processing blocks, or steps described in this entire disclosure can be performed by any combination of hardware, software, or firmware. In some embodiments, various steps or functions are performed by one or more of the following: electronic circuits, logic gates, multiplexers, a programmable logic device, an application-specific integrated circuit (ASIC), a control unit / microcontroller, or a computing system. A computing system may, but is not limited to, include a personal computing system, a mobile computing device, a mainframe computing system, a workstation, an image processor, a parallel processor, or any other device known in the prior art.In general, the term "computer system" is broadly defined to encompass any device that has one or more processors or other control units that execute instructions from a storage medium. Program instructions implementing functions, control operations, processing blocks, or steps, such as those manifested by embodiments described herein, may be transmitted via or stored on a carrier medium. The carrier medium may be a transmission medium, such as, but not limited to, a wire, cable, or wireless transmission link. The carrier medium may also comprise a non-transient signal-carrying medium or storage medium, such as, but not limited to, read-only memory, working memory, a magnetic or optical disk, a solid-state or flash memory device, or a magnetic tape. The systems described herein (e.g., systems 100, 1100, 1300, 1500) may include one or more features of another system described herein, unless the context indicates that such features would otherwise be incompatible. For example, and without limitation, system 100 may include one or more features of system 1118 for filling with organic scan solution, collection vessel 1304, and system 1500 for inline generation of organic scan solutions and internal standards, in combination with, or excluding, one or more other features of another system described herein. Furthermore, it is understood that the invention is defined by the attached claims. Although embodiments of this invention have been illustrated, it is obvious that various modifications can be made to it by those skilled in the art without departing from the scope and spirit of the disclosure. QUOTES INCLUDED IN THE DESCRIPTION This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature US 63 / 536,194

[0001] US 63 / 585,787

[0001] US 63 / 585,805

[0001] US 63 / 585,810

[0001]

Claims

A method for scanning the surface of a semiconducting wafer for organic contaminants using a nozzle, comprising: positioning a nozzle above the surface of a semiconducting wafer, the semiconducting wafer being held adjacent to or within the interior of a chamber body; supplying a first scan fluid comprising one or more organic solvents to an inlet port of the nozzle; directing a portion of the first scan fluid onto the surface of the semiconducting wafer to permit interaction between the first scan fluid and one or more organic contaminants present on the surface of the semiconducting wafer; removing the first scan fluid, which contains at least a portion of the one or more organic contaminants, from the surface of the semiconducting wafer via the nozzle;Feeding a second scan fluid comprising one or more organic solvents to the nozzle inlet port; directing a portion of the second scan fluid onto the surface of the semiconducting wafer to allow interaction between the second scan fluid and one or more residual organic contaminants present on the surface of the semiconducting wafer following the removal of the first scan fluid; and removing the second scan fluid, containing at least a portion of the one or more residual organic contaminants, from the surface of the semiconducting wafer via the nozzle. Method according to claim 1, wherein the first scan fluid and the second scan fluid have the same composition of organic solvents. Method according to claim 1, wherein the first scan fluid and the second scan fluid have different compositions of organic solvents. The method according to claim 3, further comprising: supplying a third scan fluid comprising one or more organic solvents to the inlet port of the nozzle; directing a portion of the third scan fluid onto the surface of the semiconducting wafer to allow interaction between the third scan fluid and one or more further organic residual contaminants present on the surface of the semiconducting wafer following the removal of the second scan fluid; and removing the third scan fluid, comprising at least a portion of the one or more further organic residual contaminants, from the surface of the semiconducting wafer via the nozzle. Method according to claim 4, wherein the third scan fluid has a different composition than each of the first scan fluid and the second scan fluid. Method according to claim 4, wherein the third scan fluid has the same composition as one or more of the first scan fluid and the second scan fluid. The method according to claim 1, wherein directing a portion of the first scan fluid onto the surface of the semiconducting wafer to permit interaction between the first scan fluid and one or more organic contaminants present on the surface of the semiconducting wafer comprises: directing the portion of the first scan fluid onto the surface of the semiconducting wafer to permit interaction between the first scan fluid and one or more organic contaminants present on the surface of the semiconducting wafer; and supplying a second portion of the first scan fluid to the nozzle to replenish a volume of the first scan fluid on the surface of the semiconducting wafer. Method according to claim 7, wherein the second part is equal in size to a volume of the first scan fluid evaporated from the surface of the semiconducting wafer. Method according to claim 7, wherein the second part is equal in size to a volume of the first scan fluid that has spread away from the control through the nozzle onto the surface of the semiconducting wafer. A method for scanning the surface of a semiconducting wafer for organic contaminants using a nozzle, comprising: positioning a nozzle above the surface of a semiconducting wafer, the semiconducting wafer being carried adjacent to or within the interior of a chamber body; supplying a first scan fluid comprising one or more organic solvents to an inlet port of the nozzle; directing a portion of the first scan fluid onto the surface of the semiconducting wafer to permit interaction between the first scan fluid and one or more organic contaminants present on the surface of the semiconducting wafer; while directing the portion of the first scan fluid onto the surface of the semiconducting wafer, supplying a second portion of the first scan fluid to the nozzle to replenish a volume of the first scan fluid on the surface of the semiconducting wafer;and removal of the first scan fluid containing at least part of one or more organic contaminants from the surface of the semiconducting wafer via the nozzle. Method according to claim 10, wherein the second part is equal in size to a volume of the first scan fluid evaporated from the surface of the semiconducting wafer. Method according to claim 10, wherein the second part is equal in size to a volume of the first scan fluid that has spread away from the control through the nozzle onto the surface of the semiconducting wafer. The method according to claim 10, wherein the supply of a second part of the first scan fluid to the nozzle to replenish a volume of the first scan fluid on the surface of the semiconducting wafer comprises: supplying the second part of the first scan fluid from a scan solution reservoir via a pump to the nozzle to replenish the volume of the first scan fluid on the surface of the semiconducting wafer. The method according to claim 13, wherein the supply of the second part of the first scan fluid from a scan solution reservoir via a pump to the nozzle to replenish the volume of the first scan fluid on the surface of the semiconducting wafer comprises: supplying the second part of the first scan fluid from the scan solution reservoir via the pump to the nozzle at a substantially constant flow rate to replenish the volume of the first scan fluid on the surface of the semiconducting wafer. A method for scanning the surface of a semiconducting wafer for organic contaminants using a nozzle, comprising: positioning a nozzle above the surface of a semiconducting wafer, the semiconducting wafer being carried adjacent to or within the interior of a chamber body; supplying a first scan fluid comprising one or more organic fluids to an inlet port of the nozzle; directing a portion of the first scan fluid onto the surface of the semiconducting wafer to permit interaction between the scan fluid and one or more organic contaminants present on the surface of the semiconducting wafer; and removing the first scan fluid, comprising at least a portion of the one or more organic contaminants, from the surface of the semiconducting wafer via the nozzle. The method according to claim 15, further comprising: supplying a second scan fluid comprising one or more organic fluids to the inlet port of the nozzle; directing a portion of the second scan fluid onto the surface of the semiconducting wafer to allow interaction between the second scan fluid and one or more residual organic contaminants present on the surface of the semiconducting wafer following the removal of the first scan fluid; and removing the second scan fluid, comprising at least a portion of the one or more residual organic contaminants, from the surface of the semiconducting wafer via the nozzle. Method according to claim 16, wherein the first scan fluid and the second scan fluid have different compositions of organic fluids. Method according to claim 16, further comprising: while directing the portion of the first scan fluid onto the surface of the semiconducting wafer, supplying a second portion of the first scan fluid to the nozzle to fill a volume of the first scan fluid on the surface of the semiconducting wafer. Method according to claim 18, wherein the second part is equal in size to a volume of the first scan fluid evaporated from the surface of the semiconducting wafer. The method according to claim 18, wherein the supply of a second part of the first scan fluid to the nozzle to replenish a volume of the first scan fluid on the surface of the semiconducting wafer comprises: supplying the second part of the first scan fluid from a scan solution reservoir via a pump to the nozzle to replenish the volume of the first scan fluid on the surface of the semiconducting wafer.

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