Combined semiconductor inspection system

Abstract

Combined semiconductor inspection system (1, 3, 4), comprising: - a multi-axis sample carrier (10, 30, 40) used to support a measuring sample (SP); - an optical measuring subsystem (12, 32, 34) with - a light source generator (120, 320, 340) for generating a measuring light beam (Lm, Lm1, Lm2) having a wavelength in an optical wavelength range comprising at least the UV wavelength range up to the near-infrared wavelength range; - an incident-side optic (122, 322, 342) which serves to direct the measuring light beam (Lm, Lm1, Lm2) onto the measuring sample (SP); - a receiving-side optics (124, 324, 344) which serves to receive an optical signal (Lm', Lm1', Lm2') to be measured, which is generated by irradiating the test sample (SP) with the measuring light beam (Lm, Lm1, Lm2); and - an optical receiver (126, 326, 346) which serves to receive the optical signal (Lm', Lm1', Lm2') to be measured, which is guided by the receiving-side optics (124, 324, 344), and to generate optical spectral information associated with the optical signal (Lm', Lm1', Lm2') to be measured; - an X-ray measuring subsystem (14, 42, 44) with - an X-ray generator (140, 420, 440) used to generate a measuring X-ray beam (Lx, Lx1, Lx2) with a wavelength range of more than 0.1 nm; - an X-ray optic (142, 422, 442) which serves to direct the measuring X-ray beam (Lx, Lx1, Lx2) onto the measuring sample (SP); and - an X-ray detector (144, 424, 444) which serves to receive an X-ray signal (Lx', Lx1', Lx2') to be measured, which is generated by irradiating the measurement sample (SP) with the measurement X-ray beam (Lx, Lx1, Lx2), and to generate X-ray spectral information associated with the X-ray signal (Lx', Lx1', Lx2') to be measured; and - a processing device (16, 36, 46) configured to perform a fitting analysis process based on the optical spectral information and the X-ray spectral information to obtain one or more structural parameters of the measurement sample (SP) as an analysis result.

Description

[0001] The present invention relates to a system, particularly to a combined semiconductor inspection system, which is characterized by both high efficiency and high accuracy and can be applied to various complex semiconductor products.

[0002] Today's semiconductor industry is booming and continually pushing the boundaries of what is possible, developing new structures for various end-product applications. For example, in the field of integrated circuit manufacturing, the development of three-dimensional nanoscale structures, such as gate-all-around and complementary FETs, has led to a continuous increase in drive current while simultaneously decreasing voltage to improve the efficiency of transistor applications. In the field of memory manufacturing, to increase storage capacity per unit area and to improve storage performance and read / write speed, 3D NAND was developed as a vertically aligned, repeatably stacked and interconnected structure with a high depth-to-width ratio.Given the challenges posed by these advanced processes and structures, the development of measurement devices has become a critical factor in increasing process yield.

[0003] In the past, optical metrology dominated the production flow of integrated circuits. With the introduction of more metal oxide materials and the increase in the number of layers of high-depth-to-width ratio memory structures to over 200, the limitations of optical technology are gradually becoming apparent. Therefore, it is necessary to introduce X-ray technology for analysis to provide greater penetrability and improved measurement resolution. Currently, there is still a lack of a single system or device capable of supporting metrology work across diverse and extensive process technologies.

[0004] Based on the disadvantages of the prior art, the present invention aims to provide a combined semiconductor inspection system which is characterized by both high efficiency and high accuracy and can be applied to various complex semiconductor products.

[0005] To achieve this objective, the invention proposes a combined semiconductor inspection system comprising a multi-axis sample carrier, an optical measuring subsystem, an X-ray measuring subsystem, and a processing device. The multi-axis sample carrier is used to support a measurement sample. The optical measuring subsystem comprises a light source generator, an incident-side optic, a receiving-side optic, and an optical receiver. The light source generator generates a measurement light beam with a wavelength in an optical wavelength range that includes at least the UV wavelength range to the near-infrared wavelength range. The incident-side optics direct the measurement light beam onto the measurement sample. The receiving-side optics receive an optical signal to be measured, which is generated by irradiating the measurement sample with the measurement light beam.The optical receiver receives the optical signal to be measured, which is guided by the receiving optics, and generates optical spectral information associated with the optical signal to be measured. The X-ray measurement subsystem comprises an X-ray generator, X-ray optics, and an X-ray detector. The X-ray generator is used to generate a measuring X-ray beam. The X-ray optics direct the measuring X-ray beam onto the sample. The X-ray detector receives an X-ray signal to be measured, which is generated by irradiating the sample with the measuring X-ray beam, and generates X-ray spectral information associated with the X-ray signal to be measured.The processing device is configured to perform a fitting analysis process based on the optical spectral information and the X-ray spectral information to obtain one or more structural parameters of the measurement sample as an analysis result.

[0006] To achieve this object, the invention further proposes a combined semiconductor inspection system comprising a multi-axis sample carrier, at least two optical measuring subsystems, and a processing device. The multi-axis sample carrier is used to support a measurement sample. The at least two optical measuring subsystems each comprise a light source generator, an incident-side optic, a receiving-side optic, and an optical receiver. The light source generator serves to generate a measurement light beam with a wavelength in an optical wavelength range that includes at least the UV wavelength range up to the near-infrared wavelength range. The incident-side optics serve to direct the measurement light beam onto the measurement sample. The receiving-side optics serve to receive an optical signal to be measured, which is generated by irradiating the measurement sample with the measurement light beam.The optical receiver is used to receive the optical signal to be measured, which is guided by the receiving-side optics, and to generate optical spectral information associated with the optical signal to be measured. The processing device is configured to perform a matching analysis process based on the optical spectral information generated by the at least two optical measurement subsystems in order to obtain one or more structural parameters of the measurement sample as an analysis result.

[0007] To achieve this object, the invention further proposes a combined semiconductor inspection system comprising a multi-axis sample carrier, at least two X-ray measuring subsystems, and a processing device. The multi-axis sample carrier is used to support a measurement sample. The at least two X-ray measuring subsystems each comprise an X-ray generator, an X-ray optics system, and an X-ray detector. The X-ray generator is used to generate a measurement X-ray beam. The X-ray optics system serves to direct the measurement X-ray beam onto the measurement sample. The X-ray detector serves to receive an X-ray signal to be measured, which is generated by irradiating the measurement sample with the measurement X-ray beam, and to generate X-ray spectral information associated with the X-ray signal to be measured.The processing device is configured to perform a fitting analysis process based on the X-ray spectral information generated by the at least two X-ray measurement subsystems to obtain one or more structural parameters of the measurement sample as an analysis result.

[0008] One of the advantageous effects of the present invention is that, in the combined semiconductor inspection system of the invention, due to the integration of X-ray metrology and optical metrology, combined with machine learning using an artificial neural network for result analysis, the information obtained from an X-ray measurement can be fed back into an optical measurement model, thus obtaining more accurate analysis results. At the same time, this combined semiconductor inspection system combines the penetrability of X-ray metrology and the speed of optical metrology, providing a comprehensive and highly efficient measurement solution for the analysis of a wide range of complex semiconductor devices.

[0009] For a better understanding of the features and technical content of the invention, reference is made to the following detailed description and the drawing of a preferred embodiment of the invention, which, however, is intended to serve only as an illustration and is not intended to limit the scope of the invention. Fig. 1 shows a functional block diagram of a combined semiconductor inspection system of a first embodiment of the invention. Fig. 2 shows a schematic diagram of a system architecture of the combined semiconductor inspection system of the first embodiment of the invention. Fig. 3 shows a top view of the measurement architecture of the combined semiconductor inspection system of the first embodiment of the invention. Fig. 4 shows a schematic representation of an artificial neural network used in an adaptation analysis process of an embodiment of the invention. Fig. 5 shows a functional block diagram of a combined semiconductor inspection system of a second embodiment of the invention. Fig. 6 shows a schematic diagram of a system architecture of the combined semiconductor inspection system of the second embodiment of the invention. Fig. 7 shows a top view of the measurement architecture of the combined semiconductor inspection system of the second embodiment of the invention. Fig. 8 shows a functional block diagram of a combined semiconductor inspection system of a third embodiment of the invention. Fig. 9 shows a schematic diagram of a system architecture of the combined semiconductor inspection system of the third embodiment of the invention and Fig. 10 shows a top view of the measurement architecture of the combined semiconductor inspection system of the third embodiment of the invention.

[0010] In the following, the embodiments of a combined semiconductor inspection system disclosed within the scope of the invention are described using specific, concrete exemplary embodiments. Those skilled in the art will appreciate that advantages and technical effects of the invention can be derived from the disclosures in the present description. The invention can be implemented or applied by other concrete exemplary embodiments, and various modifications or changes can be made to the details disclosed in the present description as needed and for specific applications, without thereby departing from the basic ideas of the invention. Furthermore, it should be noted that the individual components of the semiconductor inspection system according to the invention are not shown in their actual size, but only schematically.The following embodiments serve to further describe the embodiments of the invention in more detail, but the corresponding disclosures do not represent a limitation on the scope of the invention. Furthermore, the term "or" used in this description may, where appropriate, encompass any of the items listed or a combination of several such items. [First embodiment]

[0011] Fig. 1 shows a functional block diagram of a combined semiconductor inspection system of a first embodiment of the invention. Fig. 2 shows a schematic diagram of a system architecture of the combined semiconductor inspection system of the first embodiment of the invention. Fig. 3 shows a top view of the measurement architecture of the combined semiconductor inspection system of the first embodiment of the invention.

[0012] With reference to Fig. 1 to 3, the first embodiment of the invention provides a combined semiconductor inspection system 1 comprising a multi-axis sample carrier 10, an optical measuring subsystem 12, an X-ray measuring subsystem 14 and a processing device 16.

[0013] The multi-axis sample carrier 10 is a multi-axis movable carrier, which can be, for example, a three-axis tilting platform or a ball-bearing tilting platform, for supporting a measurement sample SP. The multi-axis sample carrier 10 can have a carrier movement mechanism and a carrier rotation mechanism. The carrier movement mechanism can, for example, comprise stepper motors assigned to three axes for moving the measurement sample SP along one or more of the X-axis, the Y-axis, and the Z-axis, wherein the measurement sample SP can be precisely moved to different positions by controlling the stepper motors assigned to the individual axes. In a ball-bearing tilting platform, the carrier rotation mechanism can, for example, be a ball joint connected to the actual platform and can rotate the measurement sample SP about one or more of the X-axis, Y-axis, and Z-axis.In detail, the rotation mechanism of the multi-axis sample carrier 10 may include the control of an azimuth angle θ about the Y-axis and an azimuth angle ϕ about the Z-axis, thereby enabling all-round scanning of the measurement sample SP.

[0014] In the embodiment of the invention, the measurement sample SP may be a wafer, a photomask, a photomask film, or a semiconductor element having a multilayer film.

[0015] The optical measurement subsystem 12 includes a light source generator 120, an incident-side optics 122, a receiving-side optics 124, and an optical receiver 126. The light source generator 120 serves to generate a measurement light beam Lm with a wavelength in an optical wavelength range that includes at least the UV wavelength range to the near-infrared wavelength range. More specifically, the light source generator 120 can generate a measurement light beam Lm with a wavelength between 200 nm and 3000 nm. In some embodiments, the light source generator 120 can include elements such as titanium-tantalum crystal lasers, mercury arc lamps, and halogen lamps to generate measurement light beams Lm with different wavelengths.

[0016] The incident-side optics 122 serve to direct the measurement light beam onto the measurement sample. The incident-side optics 122 may comprise one or more optical elements. In the present embodiment, the incident-side optics 122 may comprise, for example, an optical filter, an optical collimator, an optical polarizer, and an optical compensator, which are arranged sequentially between the light source generator 120 and the measurement sample SP; however, the invention is not limited thereto. Rather, suitable optical elements for the incident-side optics 122 can be selected depending on the user's needs. The optical filter can be used to filter the measurement light beam Lm generated by the light source generator 120 in order to absorb stray light outside the desired inspection wavelength.The optical collimator can collimate the diverging light generated by the light source generator 120 into a symmetrical and orderly measurement light beam Lm. The optical polarizer can be used to filter the measurement light beam Lm, allowing light from a specific direction to pass through and imparting polarization properties to the measurement light beam Lm. The optical compensator can convert the light source into circularly polarized light or elliptically polarized light after passing through the optical polarizer.

[0017] Similarly, the receiving-side optics 124 may also include one or more optical elements and serves to receive an optical signal Lm' to be measured, which is generated by irradiating the measurement sample SP with the measurement light beam Lm. The receiving-side optics 124 may include, in sequence, an optical filter, an optical collimator, an optical polarizer, and an optical compensator as optical elements. The use of the optical filter and the optical collimator will not be repeated here. The optical polarizer at the receiving end may be a rotary polarizer that converts the measurement light beam Lm into a light source with polarization properties after passing through the optical compensator of the incident-side optics 122. Analogously, the optical compensator of the receiving-side optics 124 may be a rotation compensator, the rotation of which can increase the accuracy during measurement.

[0018] The optical receiver 126 serves to receive the optical signal Lm' to be measured, which is guided by the receiving-side optics 124, and to generate optical spectral information associated with the optical signal Lm' to be measured. The optical receiver 126 can, for example, be a spectrometer that receives the optical signal Lm' to be measured after reflection or scattering from the measurement sample SP.

[0019] During the measurement, the processing device 16 can control the multi-axis sample carrier 10 to move and / or rotate so that the optical receiver 126 of the optical measurement subsystem 12 receives a plurality of optical signals Lm' to be measured, which are generated at a plurality of optical measurement positions and / or at a plurality of optical measurement angles, and generates a plurality of optical spectral information associated with the optical signals Lm' to be measured.

[0020] Furthermore, the light source generator 120 and the optical receiver 126 are arranged on an optical rotation mechanism 128, which may include one or more robot arms connected to the light source generator 120 and the optical receiver 126, each of which may have degrees of freedom in multiple directions, so that the light source generator 120 and the optical receiver 126 can rotate around the measurement sample SP simultaneously or separately.In this architecture, the processing device 16 can simultaneously control the rotation of the optical rotation mechanism 128 while controlling the movement and / or rotation of the multi-axis sample stage 10 to cause the light source generator 120 to incident the measurement light beam Lm in multiple directions and to cause the optical receiver 126 to receive the generated multiple optical signals Lm' to be measured from multiple optical measurement angles and generate multiple corresponding optical spectral information.

[0021] On the other hand, the X-ray measurement subsystem 14 includes an X-ray generator 140, an X-ray optics 142, and an X-ray detector 144. The X-ray generator 140 may include an X-ray tube within which an electron beam emitter and a target are provided, wherein the target is bombarded with an accelerated electron beam to generate a measurement X-ray beam Lx. Furthermore, different target materials such as copper (Cu), iron (Fe), molybdenum (Mo), etc., can be selected to generate measurement X-ray beams Lx with different energies or wavelengths (or frequencies).

[0022] The X-ray optics 142 serve to direct the measuring X-ray beam Lx onto the measurement sample. The X-ray optics 142 can comprise one or more X-ray optical elements. For example, the X-ray optics 142 can comprise an X-ray mirror set, an X-ray slit, and an X-ray collimator, which are arranged one behind the other between the X-ray generator 140 and the measurement sample SP. The X-ray mirror set can have a multilayer film structure to focus the measuring X-ray beam Lx horizontally and vertically. The X-ray slit can be used to control both the luminous flux and the vertical divergence angle of the measuring X-ray beam Lx incident on the measurement sample SP. The measuring X-ray beam Lx is primarily used in X-ray analysis and can, for example, be a beam with a wavelength range of more than 0.1 nm and can comprise a hard X-ray beam, a soft X-ray beam, or a gamma ray.

[0023] When a measuring X-ray beam Lx is irradiated onto the sample SP, an X-ray signal Lx' to be measured is generated by reflection, diffraction, scattering, or transmission depending on the respective angle of incidence. The X-ray detector 144 can be used to receive the above-described X-ray signal Lx' to be measured generated by reflection, diffraction, scattering, or transmission and to generate corresponding X-ray spectral information by placing it at a suitable position. The X-ray detector 144 can be a detector with high spatial resolution in more than one dimension and can receive X-ray signals Lx' to be measured with an energy of more than 1 keV.

[0024] During the measurement, the processing device 16 can control the movement and / or rotation of the multi-axis sample carrier 10 such that the X-ray detector 144 receives a plurality of X-ray signals Lx' to be measured generated at a plurality of optical measuring positions and / or at a plurality of X-ray measuring angles, and generates a plurality of X-ray spectral information associated with these X-ray signals Lx' to be measured.

[0025] Furthermore, the X-ray generator 140 and the X-ray detector 144 are arranged on an X-ray rotation mechanism 146, which may include one or more robotic arms connected to the X-ray generator 140 and the X-ray detector 144, each of which may have degrees of freedom in multiple directions, so that the X-ray generator 140 and the X-ray detector 144 can rotate around the measurement sample SP simultaneously or separately. In this architecture, the processing device 16 can simultaneously control the rotation of the X-ray rotation mechanism 146 while controlling the movement and / or rotation of the multi-axis sample carrier 10 to cause the X-ray generator 140 to impinge the measurement X-ray beam Lx in multiple directions and to cause the X-ray detector 144 to receive the generated multiple X-ray signals Lx' to be measured from multiple X-ray measurement angles and generate multiple corresponding X-ray spectral information.

[0026] As in Fig. As shown in Figure 3, the X-axis and the Y-axis may form a reference plane, wherein the projection of the optical measuring subsystem 12 onto the reference plane forms an optical measuring path OP, while the projection of the X-ray measuring subsystem onto the reference plane forms an X-ray measuring path XP, wherein the optical measuring path OP and the X-ray measuring path XP are perpendicular to each other. Thus, the combined semiconductor inspection system 1 of the invention can realize measurements in both different directions and in the same direction. For example, the optical measuring subsystem 12 can simultaneously measure at a certain azimuth angle φ during the measurement by the X-ray measuring subsystem 14 to achieve simultaneous measurement in different directions.However, if a measurement in the same direction is desired, after completion of the measurement by the X-ray measuring subsystem 14, the measuring sample SP can be rotated by rotating the multi-axis sample carrier 10 along the Z-axis by the corresponding azimuth angle ϕ, so that the X-ray measuring subsystem 14 and the optical measuring subsystem 12 can measure at the same position under the same spatial conditions and thus an accurate measurement of the X-ray signal Lx' to be measured and the optical signal Lm' to be measured from the same orientation and position in one and the same system is achieved.

[0027] The processing device 16, which may be, for example, a computer system with a processor and memory, may be configured to execute a stored instruction set or program code to control controllable elements in the multi-axis sample carrier 10, the optical measurement subsystem 12, and the X-ray measurement subsystem 14. Furthermore, the processing device 16 may be configured to perform a fitting analysis process based on the optical spectral information and the X-ray spectral information to obtain one or more structural parameters of the measurement sample as an analysis result. The structural parameters include one or more of the following parameters: thickness, roughness, density, critical dimension, line edge roughness, refractive index, and extinction coefficient.

[0028] For example, the processing device 16 may execute multiple electromagnetic wave-based calculation engines with different physical mechanisms to adjust the optical spectral information and the X-ray spectral information. The optical spectral information may, for example, include reflection spectra obtained by impinging the measurement light beam Lm on the measurement sample SP at multiple different angles of incidence, while the X-ray spectral information may, for example, include reflection spectra obtained by impinging the measurement X-ray beam Lx on the measurement sample SP at multiple different angles of incidence. The adjustment result may include structural parameters of the measurement sample SP, such as critical dimensions of a GAA-FET.The electromagnetic wave-based computing engines may include, for example, one or more of the FDTD (Finite-Difference Time-Domain) algorithm, DWBA (Distorted Wave Born Approximation) algorithm, RCWA (Rigorous Coupled Wave Analysis) algorithm, DDP (Discrete Dipole Approximation) algorithm, and BEM (Boundary Element Method) method.

[0029] In particular, the processing device 16 can adjust the optical spectral information and the X-ray spectral information based on the electromagnetic model of the optical system created with the electromagnetic wave-based calculation engines by simulation to inversely reconstruct important structural parameters of the measurement sample SP.

[0030] In the present embodiment, the optical spectral information can be generated by various interaction mechanisms between the measurement light beam Lm and the measurement sample SP. For example, the optical spectral information can include optical reflection spectral information and optical scattering spectral information. Here, the optical reflection spectral information can be obtained by controlling the azimuth angles θ and ϕ so that the light source generator 120 makes the measurement light beam Lm incident at multiple wavelengths and multiple angles of incidence, and the optical receiver 126 detects the optical signals Lm' to be measured generated by reflection. Similarly, the optical scattering spectral information can be obtained by the optical receiver 126 detecting the optical signals Lm' to be measured generated by scattering.Accordingly, in a matching analysis process, the processing device 16 may match the optical reflection spectral information and the optical scattering spectral information with the same or different electromagnetic wave-based calculation engines to inversely reconstruct the important structural parameters of the measurement sample SP.

[0031] Similarly, the X-ray spectral information can be generated by various interaction mechanisms between the measurement X-ray beam Lx and the measurement sample SP. The X-ray spectral information can include, for example, X-ray reflection spectral information, X-ray scattering spectral information, X-ray diffraction spectral information, and X-ray fluorescence spectral information. The X-ray reflection spectral information can be obtained by controlling the azimuth angles θ and ϕ so that the X-ray detector 144 detects the X-ray signals Lx' to be measured generated by reflection. Similarly, the X-ray scattering spectral information, X-ray diffraction spectral information, and X-ray fluorescence spectral information can be obtained by the X-ray detector 144 detecting the X-ray signals Lx' to be measured generated by scattering, diffraction, and fluorescence excitation, respectively.Accordingly, in a fitting analysis process, the processing device 16 may use the same or different electromagnetic wave-based calculation engines to perform a fitting analysis of the X-ray reflection spectral information, X-ray scattering spectral information, X-ray diffraction spectral information, and X-ray fluorescence spectral information, including X-ray reflection analysis (XRR), X-ray diffraction analysis (XRD), small-angle X-ray scattering analysis (SAX), and X-ray fluorescence analysis (XRF), to inversely reconstruct the important structural parameters of the measurement sample SP.

[0032] For example, when the measurement X-ray beam Lx impinges on the surface of the measurement sample SP, XRR analysis can determine the structural parameters of the measurement sample SP. For example, if the measurement sample SP comprises a multilayer structure, XRR analysis can determine the density, thickness, roughness, etc., of each layer based on the acquired X-ray reflection spectral information. On the other hand, if the measurement sample SP contains tiny components (such as a Gate-All Around and Complementary Field Effect Transistor (GAA-FET)), XRR analysis can determine, among other things, the orientation and critical dimensions of the GAA-FET based on the acquired X-ray reflection spectrum.

[0033] It will be on the Fig. 4, which shows a schematic representation of an artificial neural network used in a matching analysis process of an embodiment of the invention. It should be noted that when performing the matching analysis process, the processing device 16 converts the resulting optical spectral information into the Fig. 4 can be input into the artificial neural network model 2. The artificial neural network model 2 comprises a machine pre-learning structure 20 and a measurement data analysis structure 22.

[0034] The machine pre-learning structure 20 may comprise an input layer 200, a plurality of hidden layers 202, and an output layer 204, and is trained to generate a plurality of optical prediction results and a plurality of X-ray prediction results based on a target architecture to be measured and a plurality of predetermined structural parameters associated with the target architecture to be measured.

[0035] It should be noted that the target architecture to be measured can be a known element structure in the measurement sample SP, such as a three-dimensional NAND memory repeatedly stacked and interconnected in the vertical direction, a gate all-around (GAA) structure, and a complementary metal oxide semiconductor field-effect transistor (Complementary MOSFET, CMOS) structure, etc., where the predetermined structural parameters can be theoretical structural parameters on the basis of which such elements are manufactured and include multilayer / single-layer film thickness, roughness, density, critical dimension of nanoscale microstructures, line edge roughness, n, k values of special semiconductor materials, etc.

[0036] The input layer 200 inputs the above-mentioned structural parameters into the hidden layers 202. In each of the hidden layers 202, a corresponding weight or a specified threshold can be set according to the theory or user needs to achieve the purpose of data analysis. The results of learning or simulating multiple data are then transferred to the output layer 204. The output layer 204 calculates and processes the generated optical prediction results and X-ray prediction results for the hidden layers 202, which may be optical spectral information and X-ray spectral information resulting from the prediction, respectively.

[0037] Subsequently, the processing device 16 further inputs the optical prediction results, the X-ray prediction results, the optical spectral information, and the X-ray spectral information into the measurement data analysis structure 22. The measurement data analysis structure 22 may also include an input layer 220, a plurality of hidden layers 222, and an output layer 224. The measurement data analysis structure 22 may be trained to model and analyze the target architecture to be measured based on the optical spectral information and the X-ray spectral information to inversely derive the structural parameters of the measurement sample SP.In addition, the measurement data analysis structure 22 further restricts the fitting range for the measurement sample SP based on the optical prediction results and X-ray prediction results generated by the machine pre-learning structure 20, so that the structural parameters of the measurement sample SP can be calculated and analyzed more quickly and accurately.

[0038] Therefore, in the combined semiconductor inspection system according to the first embodiment of the invention, by integrating X-ray metrology and optical metrology, combined with machine learning using an artificial neural network for result analysis, the information obtained from X-ray measurement can be fed back into an optical measurement model, thus obtaining more accurate analysis results. At the same time, this combined semiconductor inspection system combines the penetrability of X-ray metrology and the speed of optical metrology, providing a comprehensive and highly efficient measurement solution for analyzing a wide range of complex semiconductor devices. [Second embodiment]

[0039] Fig. 5 shows a functional block diagram of a combined semiconductor inspection system of a second embodiment of the invention. Fig. 6 shows a schematic diagram of a system architecture of the combined semiconductor inspection system of the second embodiment of the invention. Fig. Figure 7 shows a top view of the measurement architecture of the combined semiconductor inspection system of the second embodiment of the invention. The second embodiment of the invention additionally provides a combined semiconductor inspection system 3 comprising a multi-axis sample carrier 30, optical measurement subsystems 32, 34, and a processing device 36. In the present embodiment, elements that are the same as or similar to those of the first embodiment are provided with similar reference numerals and will not be described repeatedly.

[0040] The multi-axis sample carrier 30 is similar to the multi-axis sample carrier 10 of the first embodiment. The optical measuring subsystems 32, 34 are essentially similar to the optical measuring subsystem 12. The optical measuring subsystem 32 includes a light source generator 320, an incident-side optic 322, a receiving-side optic 324, and an optical receiver 326. The optical measuring subsystem 34 includes a light source generator 340, an incident-side optic 342, a receiving-side optic 344, and an optical receiver 346. The light source generators 320, 340 each serve to generate a measuring light beam Lm1 or Lm2 with a wavelength in an optical wavelength range that includes at least the UV wavelength range up to the near-infrared wavelength range. The incident-side optics 322, 342 each serve to direct the measuring light beam Lm1 or Lm2 onto a measuring sample SP.The receiving-side optics 324, 344 each serve to receive an optical signal to be measured Lm1' or Lm2', which is generated by irradiating the measurement sample SP with the measuring light beam Lm1 or Lm2. The optical receivers 326, 346 each serve to receive the optical signal to be measured Lm1' or Lm2', which is guided by the receiving-side optics 324 or 344, and to generate optical spectral information associated with the optical signal to be measured Lm1' or Lm2'.

[0041] It should be noted that the second embodiment differs from the first embodiment in that in the second embodiment the X-ray measuring subsystem 14 is replaced by the optical measuring subsystem 34. Fig. 7 shows that the X-axis and the Y-axis can form a reference plane, wherein the projection of the optical measuring subsystem 32 onto the reference plane forms an optical measuring path OP1, and the projection of the optical measuring subsystem 34 onto the reference plane forms an optical measuring path OP2, wherein the optical measuring path OP1 and the optical measuring path OP2 are perpendicular to each other. Thus, the combined semiconductor inspection system 3 of the invention can realize measurements in different directions. For example, the optical measuring subsystem 34 can simultaneously measure at a certain azimuth angle φ during the measurement by the optical measuring subsystem 32 to achieve simultaneous measurement in different directions, which can significantly increase the throughput of the measurement data and reduce the time required to generate optical spectral information.It is conceivable that a desired measurement in the same direction can be achieved by controlling the optical measuring subsystems 32, 34 so that the measuring conditions coincide with each other.

[0042] On the other hand, the light source generator 320 and the optical receiver 326 are arranged on an optical rotation mechanism 328 and the light source generator 340 and the optical receiver 346 are arranged on an optical rotation mechanism 348, wherein the optical rotation mechanisms 328, 348 can each comprise one or more robot arms, each of which can have degrees of freedom in multiple directions, so that the light source generators 320, 340 and the optical receivers 326, 346 can rotate around the measurement sample SP simultaneously or separately.

[0043] Although two optical measuring subsystems 32, 34 are used in the present embodiment, the invention is not limited thereto. The number of optical measuring subsystems can be configured according to the user's needs. Furthermore, the number of the light source generator, the incident-side optics, the receiving-side optics, and the optical receiver is not limited to the number shown in Fig. 5 to 7. For example, it is conceivable that only a single light source generator and a single incident-side optics are provided, while several receiving-side optics and several optical receivers are present.

[0044] Furthermore, similar to the first embodiment, the processing device 36 may perform a matching analysis process based on the optical spectral information generated by the optical measurement subsystems 32, 34 to obtain the structural parameters of the measurement sample SP as the analysis result. When performing the matching analysis process, the processing device 36 may convert the resulting optical spectral information into the Fig. 4. Since the details of data processing by the artificial neural network model 2 are similar to those of the first embodiment, their repeated description is omitted here. [Third embodiment]

[0045] Fig. 8 shows a functional block diagram of a combined semiconductor inspection system of a third embodiment of the invention. Fig. 9 shows a schematic diagram of a system architecture of the combined semiconductor inspection system of the third embodiment of the invention. Fig. Figure 10 shows a top view of the measurement architecture of the combined semiconductor inspection system of the third embodiment of the invention. The third embodiment of the invention additionally provides a combined semiconductor inspection system 4 comprising a multi-axis sample carrier 40, X-ray measurement subsystems 42, 44, and a processing device 46. In the present embodiment, elements that are the same as or similar to those of the first embodiment are provided with similar reference numerals and will not be described repeatedly.

[0046] The multi-axis sample carrier 40 is similar to the multi-axis sample carrier 10 of the first embodiment. The X-ray measuring subsystems 42, 44 are essentially similar to the X-ray measuring subsystem 14. The X-ray measuring subsystem 42 includes an X-ray generator 420, an X-ray optics system 422, and an X-ray detector 424. The X-ray measuring subsystem 44 includes an X-ray generator 440, an X-ray optics system 442, and an X-ray detector 444. The X-ray generators 420, 440 each serve to generate a measuring X-ray beam Lx1 or Lx2, which can, for example, be a beam with a wavelength range of more than 0.1 nm and can include a hard X-ray beam, a soft X-ray beam, or a gamma ray.

[0047] When the measuring X-ray beam Lx1 or Lx2 is irradiated onto a measuring sample SP, an X-ray signal Lx1' or Lx2' to be measured is generated by reflection, diffraction, scattering or transmission depending on the respective angle of incidence, wherein the X-ray detectors 424, 444 can be used to receive the above-described X-ray signal Lx1' or Lx2' to be measured generated by reflection, diffraction, scattering or transmission and to generate corresponding X-ray spectral information by placing them at a suitable position.

[0048] It should be noted that the third embodiment differs from the first embodiment in that in the third embodiment the optical measuring subsystem 12 is replaced by the X-ray measuring subsystem 42. Fig. 10, the X-axis and the Y-axis can form a reference plane, wherein the projection of the X-ray measurement subsystem 42 onto the reference plane forms an X-ray measurement path XP1, and the projection of the X-ray measurement subsystem 44 onto the reference plane forms an X-ray measurement path XP2, wherein the X-ray measurement paths XP1, XP2 are perpendicular to each other. Thus, the combined semiconductor inspection system 4 of the present utility model can realize measurements in different directions. For example, the X-ray measurement subsystem 44 can simultaneously measure at a certain azimuth angle ϕ during the measurement by the X-ray measurement subsystem 42 to achieve simultaneous measurement in different directions, which can significantly increase the throughput of the measurement data and reduce the time required to generate X-ray spectral information.It is conceivable that a desired measurement in the same direction can be achieved by controlling the X-ray measuring subsystems 42, 44 so that the measuring conditions coincide with each other.

[0049] On the other hand, the X-ray generator 420 and the X-ray detector 424 can be arranged on an X-ray rotation mechanism 426 and the X-ray generator 440 and the X-ray detector 444 can be arranged on an X-ray rotation mechanism 446, wherein the X-ray rotation mechanisms 426, 446 can each comprise one or more robot arms, each of which can have degrees of freedom in several directions, so that the X-ray generators 420, 440 and the X-ray detectors 424, 444 can rotate around the measurement sample SP simultaneously or separately.

[0050] Although two X-ray measurement subsystems 42, 44 are used in the present embodiment, the invention is not limited thereto. The number of X-ray measurement subsystems can be configured according to the user's needs. Furthermore, the number of X-ray generators, X-ray optics, and X-ray detectors is not limited to the Fig. 8 to 10. For example, it is conceivable that only a single X-ray generator and a single X-ray optics are provided, while several X-ray detectors are present to simultaneously detect the X-ray signals to be measured, which are generated by reflection, diffraction, scattering, and fluorescence excitation.

[0051] Furthermore, similar to the first embodiment, the processing device 46 may perform a fitting analysis process based on the X-ray spectral information generated by the X-ray measurement subsystems 42, 44 to obtain the structural parameters of the measurement sample SP as the analysis result. When performing the fitting analysis process, the processing device 46 may input the resulting X-ray spectral information into the Fig. 4. Since the details of data processing by the artificial neural network model 2 are similar to those of the first embodiment, their repeated description is omitted here. [Advantageous effects of the embodiments]

[0052] One of the advantageous effects of the invention is that, due to the integration of X-ray metrology and optical metrology, combined with machine learning using an artificial neural network for result analysis, the combined semiconductor inspection system of the invention allows the information obtained from an X-ray measurement to be fed back into an optical measurement model, thus enabling more accurate analysis results. At the same time, this combined semiconductor inspection system combines the penetrability of X-ray metrology and the speed of optical metrology, providing a comprehensive and highly efficient measurement solution for the analysis of a wide range of complex semiconductor devices.

[0053] The above disclosure merely represents preferred possible embodiments of the invention and is not intended to limit the scope of the claims of the invention, so that all equivalent technical changes made by applying the content of the description and the drawings of the invention are included within the scope of the claims of the invention. List of reference symbols 1, 3, 4 Combined semiconductor inspection system 10, 30, 40 Multi-axis sample carrier 12, 32, 34 Optical measuring subsystem 120, 320, 340 light source generator 122, 322, 342 Incoming optics 124, 324, 344 Receiving-side optics 126, 326, 346 Optical Receiver 14, 42, 44 X-ray measurement subsystem 140, 420, 440 X-ray generator 142, 422, 442 X-ray optics 144, 424, 444 X-ray detector 146, 426, 446 X-ray rotation mechanism 16, 36, 46 processing device SP sample X, Y, Z axis θ, ϕ azimuth angle Lm, Lm1, Lm2 measuring light beam Lm', Lm1', Lm2' Optical signal to be measured 128, 328, 348 Optical rotation mechanism Lx, Lx1, Lx2 measuring x-ray Lx', Lx1', Lx2' X-ray signal to be measured OP, OP1, OP2 Optical measuring path XP, XP1, XP2 X-ray measurement path 2 Artificial neural network model 20 Machine prelearning structure 22 Measurement data analysis structure 200, 220 input layer 202, 222 Hidden layer 204, 224 Output layer

Claims

[1] Combined semiconductor inspection system (1, 3, 4), comprising: - a multi-axis sample carrier (10, 30, 40) used to support a measuring sample (SP); - an optical measuring subsystem (12, 32, 34) with - a light source generator (120, 320, 340) for generating a measuring light beam (Lm, Lm1, Lm2) having a wavelength in an optical wavelength range comprising at least the UV wavelength range up to the near-infrared wavelength range; - an incident-side optic (122, 322, 342) which serves to direct the measuring light beam (Lm, Lm1, Lm2) onto the measuring sample (SP); - a receiving-side optics (124, 324, 344) which serves to receive an optical signal (Lm', Lm1', Lm2') to be measured, which is generated by irradiating the test sample (SP) with the measuring light beam (Lm, Lm1, Lm2); and - an optical receiver (126, 326, 346) which serves to receive the optical signal (Lm', Lm1', Lm2') to be measured, which is guided by the receiving-side optics (124, 324, 344), and to generate optical spectral information associated with the optical signal (Lm', Lm1', Lm2') to be measured; - an X-ray measuring subsystem (14, 42, 44) with - an X-ray generator (140, 420, 440) used to generate a measuring X-ray beam (Lx, Lx1, Lx2) with a wavelength range of more than 0.1 nm; - an X-ray optic (142, 422, 442) which serves to direct the measuring X-ray beam (Lx, Lx1, Lx2) onto the measuring sample (SP); and - an X-ray detector (144, 424, 444) which serves to receive an X-ray signal (Lx', Lx1', Lx2') to be measured, which is generated by irradiating the measurement sample (SP) with the measurement X-ray beam (Lx, Lx1, Lx2), and to generate X-ray spectral information associated with the X-ray signal (Lx', Lx1', Lx2') to be measured; and - a processing device (16, 36, 46) configured to perform a fitting analysis process based on the optical spectral information and the X-ray spectral information to obtain one or more structural parameters of the measurement sample (SP) as an analysis result. [2] The combined semiconductor inspection system (1, 3, 4) according to claim 1, wherein the multi-axis sample stage (10, 30, 40) comprises a stage moving mechanism and a stage rotating mechanism, the stage moving mechanism being used to move the measurement sample (SP) along one or more of a first axis (X, Y, Z), a second axis (X, Y, Z), and a third axis (X, Y, Z), and the stage rotating mechanism being used to rotate the measurement sample (SP) about one or more of the first axis (X, Y, Z), the second axis (X, Y, Z), and the third axis (X, Y, Z). [3] Combined semiconductor inspection system (1, 3, 4) according to claim 1 or 2, wherein the processing device (16, 36, 46) is further configured to control the multi-axis sample carrier (10, 30, 40) to move and / or rotate such that the optical receiver (126, 326, 346) receives the plurality of optical signals (Lm', Lm1', Lm2') to be measured, which are generated at a plurality of optical measuring positions and / or at a plurality of first optical measuring angles, and generates the plurality of optical spectral information associated with the optical signals (Lm', Lm1', Lm2') to be measured, while the X-ray detector (144, 424, 444) receives the plurality of X-ray signals (Lx', Lx1', Lx2') to be measured and generates the plurality of X-ray signals (Lx', Lx1', Lx2') is generated. [4] Combined semiconductor inspection system (1, 3, 4) according to claim 3, wherein the light source generator (120, 320, 340) and the optical receiver (126, 326, 346) are arranged on an optical rotation mechanism (128, 328, 348) so that the light source generator (120, 320, 340) and the optical receiver (126, 326, 346) rotate simultaneously or separately around the measurement sample (SP), while the X-ray generator (140, 420, 440) and the X-ray detector (144, 424, 444) are arranged on an X-ray rotation mechanism (146, 426, 446) so that the X-ray generator (140, 420, 440) and the X-ray detector (144, 424, 444) simultaneously or rotate separately around the sample (SP). [5] Combined semiconductor inspection system (1, 3, 4) according to claim 3 or 4, wherein - the processing device (16, 36, 46) is further configured to control the rotation of the optical rotation mechanism (128, 328, 348) to cause the light source generator (120, 320, 340) to cause the measurement light beam (Lm, Lm1, Lm2) to be incident in a plurality of directions and to cause the optical receiver (126, 326, 346) to receive the generated plurality of optical signals to be measured (Lm', Lm1', Lm2') from a plurality of second optical measurement angles and to generate the plurality of optical spectral information associated with the optical signals to be measured (Lm', Lm1', Lm2'); - the processing device (16, 36, 46) is further configured to control the rotation of the X-ray rotation mechanism (146, 426, 446) to cause the X-ray generator (140, 420, 440) to cause the measuring X-ray beam (Lx, Lx1, Lx2) to be incident in multiple directions, and to cause the X-ray detector (144, 424, 444) to receive the generated plurality of X-ray signals to be measured (Lx', Lx1', Lx2') from multiple X-ray measurement angles and to generate the plurality of X-ray spectral information associated with the X-ray signals to be measured (Lx', Lx1', Lx2'). [6] Combined semiconductor inspection system (1, 3, 4) according to claim 5, wherein - the processing device (16, 36, 46) is further configured to control the rotation of the optical rotation mechanism (128, 328, 348) and / or the carrier rotation mechanism so that the optical receiver (126, 326, 346) receives the optical signal (Lm', Lm1', Lm2') to be measured, which is generated by reflection or scattering when the measurement sample (SP) is irradiated with the measurement light beam (Lm, Lm1, Lm2); - the processing device (16, 36, 46) is further configured to control the rotation of the X-ray rotation mechanism (146, 426, 446) and / or the carrier rotation mechanism such that the X-ray detector (144, 424, 444) receives the X-ray signal (Lx', Lx1', Lx2') to be measured, which is generated by reflection, diffraction, scattering or penetration when the measurement sample (SP) is irradiated with the measurement X-ray beam (Lx, Lx1, Lx2). [7] Combined semiconductor inspection system (1, 3, 4) according to one of claims 2 to 6, wherein the first axis (X, Y, Z) and the second axis (X, Y, Z) form a reference plane, wherein the projection of the optical measuring subsystem (12, 32, 34) onto the reference plane forms an optical measuring path (OP, OP1, OP2) and the projection of the X-ray measuring subsystem (14, 42, 44) onto the reference plane forms an X-ray measuring path (XP, XP1, XP2), wherein the optical measuring path (OP, OP1, OP2) and the X-ray measuring path (XP, XP1, XP2) are perpendicular to each other. [8] Combined semiconductor inspection system (1, 3, 4) according to one of claims 1 to 7, wherein the incident-side optics (122, 322, 342) comprise one or more first optical elements, each of the first optical elements being a first optical filter, a first optical collimator, a first optical polarizer or a first optical compensator, while the receiving-side optics (124, 324, 344) comprise a plurality of second optical elements, each of the second optical elements being a second optical filter, a second optical collimator, a second optical polarizer or a second optical compensator. [9] Combined semiconductor inspection system (1, 3, 4) according to one of claims 1 to 8, wherein the X-ray optics (142, 422, 442) comprises one or more X-ray optical elements, each of the X-ray optical elements being an X-ray mirror set with a multilayer film structure, an X-ray slit or an X-ray optical collimator. [10] A combined semiconductor inspection system (1, 3, 4) according to any one of claims 1 to 9, wherein the one or more structural parameters comprise one or more of the following parameters: thickness, roughness, density, critical dimension, line edge roughness, refractive index and extinction coefficient. [11] Combined semiconductor inspection system (1, 3, 4) according to one of claims 1 to 10, wherein the adaptation analysis process comprises configuring the processing device (16, 36, 46) to input the optical spectral information and the X-ray spectral information into an artificial neural network model (2), which artificial neural network model (2) comprises a machine pre-learning structure (20) and a measurement data analysis structure (22), wherein the machine pre-learning structure (20) is trained to generate a plurality of optical prediction results and a plurality of X-ray prediction results based on a target architecture to be measured and a plurality of predetermined structural parameters associated with the target architecture to be measured, while the measurement data analysis structure (22) is trained to predict the target architecture to be measured based on the optical prediction results, the X-ray prediction results,the optical spectral information and the X-ray spectral information are modeled and analyzed to generate the one or more structural parameters of the measurement sample (SP). [12] Combined semiconductor inspection system (1, 3, 4) comprising: - a multi-axis sample carrier (10, 30, 40) used to support a measuring sample (SP); - at least two optical measuring subsystems (12, 32, 34), each comprising: - a light source generator (120, 320, 340) for generating a measuring light beam (Lm, Lm1, Lm2) having a wavelength in an optical wavelength range comprising at least the UV wavelength range to the near-infrared wavelength range; - an incident-side optic (122, 322, 342) which serves to direct the measuring light beam (Lm, Lm1, Lm2) onto the measuring sample (SP); - a receiving-side optics (124, 324, 344) which serves to receive an optical signal (Lm', Lm1', Lm2') to be measured, which is generated by irradiating the test sample (SP) with the measuring light beam (Lm, Lm1, Lm2); and - an optical receiver (126, 326, 346) which serves to receive the optical signal (Lm', Lm1', Lm2') to be measured, which is guided by the receiving-side optics (124, 324, 344), and to generate optical spectral information associated with the optical signal (Lm', Lm1', Lm2') to be measured; and - a processing device (16, 36, 46) configured to perform a matching analysis process based on the optical spectral information generated by the at least two optical measuring subsystems (12, 32, 34) to obtain one or more structural parameters of the measurement sample (SP) as an analysis result. [13] The combined semiconductor inspection system (1, 3, 4) according to claim 12, wherein the multi-axis sample stage (10, 30, 40) comprises a stage moving mechanism and a stage rotating mechanism, the stage moving mechanism being used to move the measurement sample (SP) along one or more of a first axis (X, Y, Z), a second axis (X, Y, Z), and a third axis (X, Y, Z), and the stage rotating mechanism being used to rotate the measurement sample (SP) about one or more of the first axis (X, Y, Z), the second axis (X, Y, Z), and the third axis (X, Y, Z). [14] Combined semiconductor inspection system (1, 3, 4) according to claim 12 or 13, wherein the processing device (16, 36, 46) is further configured to control the multi-axis sample carrier (10, 30, 40) to move and / or rotate such that the optical receiver (126, 326, 346) of each of the optical measurement subsystems (12, 32, 34) receives the plurality of optical signals (Lm', Lm1', Lm2') to be measured, which are generated at a plurality of optical measurement positions and / or at a plurality of first optical measurement angles, and generates the plurality of optical spectral information associated with the optical signals (Lm', Lm1', Lm2') to be measured. [15] Combined semiconductor inspection system (1, 3, 4) according to claim 14, wherein the light source generator (120, 320, 340) and the optical receiver (126, 326, 346) of each of the optical measuring subsystems (12, 32, 34) are arranged on an optical rotation mechanism (128, 328, 348) so that the light source generator (120, 320, 340) and the optical receiver (126, 326, 346) rotate simultaneously or separately around the measurement sample (SP). [16] The combined semiconductor inspection system (1, 3, 4) according to claim 14 or 15, wherein the processing device (16, 36, 46) is further configured to control the rotation of each of the optical rotation mechanisms (128, 328, 348) to cause the light source generator (120, 320, 340) of each of the optical measurement subsystems (12, 32, 34) to make the measurement light beam (Lm, Lm1, Lm2) incident in multiple directions, and to cause the optical receiver (126, 326, 346) to receive the generated plurality of optical signals to be measured (Lm', Lm1', Lm2') from a plurality of second optical measurement angles and to obtain the plurality of optical spectral information associated with the optical signals to be measured (Lm', Lm1', Lm2'). generate. [17] The combined semiconductor inspection system (1, 3, 4) according to claim 16, wherein the processing device (16, 36, 46) is further configured to control the rotation of the optical rotation mechanism (128, 328, 348) and / or the carrier rotation mechanism such that the optical receiver (126, 326, 346) of each of the optical measurement subsystems (12, 32, 34) receives the optical signal (Lm', Lm1', Lm2') to be measured, which is generated by reflection or scattering when the measurement sample (SP) is irradiated with the measurement light beam (Lm, Lm1, Lm2). [18] Combined semiconductor inspection system (1, 3, 4) according to one of claims 13 to 17, wherein the first axis (X, Y, Z) and the second axis (X, Y, Z) form a reference plane, wherein the projection of one optical measuring subsystem (12, 32, 34) onto the reference plane forms a first optical measuring path (OP, OP1, OP2) and the projection of the other optical measuring subsystem (12, 32, 34) onto the reference plane forms a second optical measuring path (OP, OP1, OP2), wherein the first optical measuring path (OP, OP1, OP2) and the second optical measuring path (OP, OP1, OP2) are perpendicular to each other. [19] Combined semiconductor inspection system (1, 3, 4) according to one of claims 1 to 18, wherein the adaptation analysis process comprises configuring the processing device (16, 36, 46) to input the generated optical spectral information into an artificial neural network model (2), which artificial neural network model (2) comprises a machine pre-learning structure (20) and a measurement data analysis structure (22), wherein the machine pre-learning structure (20) is trained to generate a plurality of optical prediction results based on a target architecture to be measured and a plurality of predetermined structural parameters associated with the target architecture to be measured, while the measurement data analysis structure (22) is trained to model and analyze the target architecture to be measured based on the optical prediction results and the optical spectral information to generate the one or more structural parameters of the measurement sample (SP). [20] Combined semiconductor inspection system (1, 3, 4), comprising: - a multi-axis sample carrier (10, 30, 40) used to support a measuring sample (SP); - at least two X-ray measurement subsystems (14, 42, 44), each comprising: - an X-ray generator (140, 420, 440) used to generate a measuring X-ray beam (Lx, Lx1, Lx2) with a wavelength range of more than 0.1 nm; - an X-ray optics (142, 422, 442) which serves to direct the measuring X-ray beam (Lx, Lx1, Lx2) onto the measuring sample (SP); and - an X-ray detector (144, 424, 444) which serves to receive an X-ray signal (Lx', Lx1', Lx2') to be measured, which is generated by irradiating the measurement sample (SP) with the measurement X-ray beam (Lx, Lx1, Lx2), and to generate X-ray spectral information associated with the X-ray signal (Lx', Lx1', Lx2') to be measured; and - a processing device (16, 36, 46) configured to perform a fitting analysis process based on the X-ray spectral information generated by the at least two X-ray measurement subsystems (14, 42, 44) to obtain one or more structural parameters of the measurement sample (SP) as an analysis result. [21] The combined semiconductor inspection system (1, 3, 4) according to claim 20, wherein the multi-axis sample stage (10, 30, 40) comprises a stage moving mechanism and a stage rotating mechanism, the stage moving mechanism being used to move the measurement sample (SP) along one or more of a first axis (X, Y, Z), a second axis (X, Y, Z), and a third axis (X, Y, Z), and the stage rotating mechanism being used to rotate the measurement sample (SP) about one or more of the first axis (X, Y, Z), the second axis (X, Y, Z), and the third axis (X, Y, Z). [22] The combined semiconductor inspection system (1, 3, 4) of claim 20 or 21, wherein the processing device (16, 36, 46) is further configured to control the multi-axis sample carrier (10, 30, 40) to move and / or rotate such that the X-ray detector (144, 424, 444) of each of the X-ray measurement subsystems (14, 42, 44) receives the plurality of X-ray signals (Lx', Lx1', Lx2') to be measured and generates the plurality of X-ray spectral information associated with the X-ray signals (Lx', Lx1', Lx2') to be measured. [23] Combined semiconductor inspection system (1, 3, 4) according to claim 22, wherein the X-ray generator (140, 420, 440) and the X-ray detector (144, 424, 444) of each of the X-ray measurement subsystems (14, 42, 44) are arranged on an X-ray rotation mechanism (146, 426, 446) so that the X-ray generator (140, 420, 440) and the X-ray detector (144, 424, 444) rotate simultaneously or separately around the measurement sample (SP). [24] Combined semiconductor inspection system (1, 3, 4) according to claim 22 or 23, wherein - the processing device (16, 36, 46) is further configured to control the rotation of the X-ray rotation mechanism (146, 426, 446) to cause the X-ray generator (140, 420, 440) of each of the X-ray measurement subsystems (14, 42, 44) to cause the measurement X-ray beam (Lx, Lx1, Lx2) to be incident in multiple directions, and to cause the X-ray detector (144, 424, 444) of each of the X-ray measurement subsystems (14, 42, 44) to receive the generated plurality of X-ray signals (Lx', Lx1', Lx2') to be measured from a plurality of second X-ray measurement angles and to generate the plurality of X-ray spectral information associated with the X-ray signals (Lx', Lx1', Lx2') to be measured; - the processing device (16, 36, 46) is further configured to control the rotation of the X-ray rotation mechanism (146, 426, 446) to cause the X-ray generator (140, 420, 440) to cause the measuring X-ray beam (Lx, Lx1, Lx2) to be incident in multiple directions, and to cause the X-ray detector (144, 424, 444) to receive the generated plurality of X-ray signals to be measured (Lx', Lx1', Lx2') from multiple X-ray measurement angles and to generate the plurality of X-ray spectral information associated with the X-ray signals to be measured (Lx', Lx1', Lx2'). [25] Combined semiconductor inspection system (1, 3, 4) according to claim 24, wherein - the processing device (16, 36, 46) is further configured to control the rotation of the X-ray rotation mechanism (146, 426, 446) and / or the carrier rotation mechanism such that the X-ray detector (144, 424, 444) receives the X-ray signal (Lx', Lx1', Lx2') to be measured, which is generated by reflection or scattering when the measurement sample (SP) is irradiated with the measurement X-ray beam (Lx, Lx1, Lx2); - the processing device (16, 36, 46) is further configured to control the rotation of the X-ray rotation mechanism (146, 426, 446) and / or the carrier rotation mechanism such that the X-ray detector (144, 424, 444) receives the X-ray signal (Lx', Lx1', Lx2') to be measured, which is generated by reflection, diffraction, scattering or penetration when the measurement sample (SP) is irradiated with the measurement X-ray beam (Lx, Lx1, Lx2). [26] Combined semiconductor inspection system (1, 3, 4) according to one of claims 21 to 25, wherein the first axis (X, Y, Z) and the second axis (X, Y, Z) form a reference plane, wherein the projection of one X-ray measuring subsystem (14, 42, 44) onto the reference plane forms a first X-ray measuring path (XP, XP1, XP2) and the projection of the other X-ray measuring subsystem (14, 42, 44) onto the reference plane forms a second X-ray measuring path (XP, XP1, XP2), wherein the first X-ray measuring path (XP, XP1, XP2) and the second X-ray measuring path (XP, XP1, XP2) are perpendicular to one another. [27] Combined semiconductor inspection system (1, 3, 4) according to one of claims 20 to 26, wherein the X-ray optics (142, 422, 442) of each of the X-ray measurement subsystems (14, 42, 44) comprises one or more X-ray optical elements, each of the X-ray optical elements being an X-ray mirror set with a multilayer film structure, an X-ray slit or an X-ray optical collimator. [28] Combined semiconductor inspection system (1, 3, 4) according to one of claims 20 to 27, wherein the adaptation analysis process comprises configuring the processing device (16, 36, 46) to input the generated X-ray spectral information into an artificial neural network model (2), which artificial neural network model (2) comprises a machine pre-learning structure (20) and a measurement data analysis structure (22), wherein the machine pre-learning structure (20) is trained to generate a plurality of X-ray prediction results based on a target architecture to be measured and a plurality of predetermined structural parameters associated with the target architecture to be measured, while the measurement data analysis structure (22) is trained to model and analyze the target architecture to be measured based on the X-ray prediction results and the X-ray spectral information to generate the one or more structural parameters of the measurement sample (SP).

Images