ARCHITECTURE OF INDUCTIVE WIRING, INTEGRATED CIRCUIT AND COMMUNICATION DEVICE

DE602019065274T2Active Publication Date: 2025-01-22HUAWEI TECH CO LTD
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Patent Information

Application Number
DE602019065274
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Filing Date
2019-03-29
Publication Date
2025-01-22
Estimated Expiration
2039-03-29

AI Technical Summary

Technical Problem

In integrated circuits, particularly RFICs, the insufficient metal arrangement area in the bottom metal layer of metal wires leads to poor yield and a risk of short-circuiting, especially when dummy metals are used under inductor devices, which can impair the inductor's performance.

Method used

The inductor device wiring architecture includes a plurality of dummy metals arranged in multiple metal layers under the inductor device, with the arrangement areas of dummy metals progressively increasing in a direction away from the inductor device, minimizing their impact on the inductor's performance while ensuring sufficient metal arrangement for chemical mechanical polishing.

Benefits of technology

This architecture reduces adverse effects on the inductor device performance, increases product yield, and improves processing quality by maintaining a sufficient metal arrangement area under the inductor device.

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