PERIPHERAL STORAGE CIRCUIT WITH THREE-DIMENSIONAL TRANSISTORS AND METHOD FOR THEIR MANUFACTURING
Patent Information
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- YANGTZE MEMORY TECH CO LTD
- Filing Date
- 2021-06-30
- Publication Date
- 2026-05-06
AI Technical Summary
Existing memory devices face challenges in achieving high speed, low leakage current, high voltage, and small size in memory peripheral circuits without increasing cost, as scaling down planar transistors leads to undesirable high leakage current and advanced CMOS technology nodes are not suitable due to voltage reduction and increased complexity.
Replace conventional planar transistors in memory peripheral circuits with 3D transistors, allowing for a hybrid configuration with both 3D and planar transistors in the same process flow, which reduces leakage current and enables smaller sizes while maintaining high saturated drain current.
The use of 3D transistors in memory peripheral circuits achieves better speed and leakage current performance, reduces circuit size, and maintains high voltage levels without increasing cost, addressing the limitations of planar transistors and advanced CMOS technology nodes.