Self-curing concrete as new material for microsystems

Abstract

The invention relates to a semiconductor component comprising a MEMS element and / or an electronic circuit, wherein the MEMS element and / or the electronic circuit is formed on or in a base substrate. The semiconductor component is characterised in that it comprises a concrete material. Thus one or more components of the semiconductor component can comprise the concrete material, such as the base substrate, an insulation layer and / or a protective casing. The invention also relates to a method for producing the semiconductor component.

Description

[0001] SELF-CURING CONCRETE AS A NEW MATERIAL FOR MICROSYSTEMS

[0002] DESCRIPTION

[0003] The invention relates to a semiconductor component comprising a MEMS element and / or an electronic circuit, wherein the MEMS element and / or the electronic circuit are incorporated on or in a base substrate. The semiconductor component is characterized in that it comprises a concrete material. Thus, one or more components of the semiconductor component can comprise the concrete material, such as the base substrate, an insulating layer, and / or a protective sheath.

[0004] Furthermore, the invention relates to a method for producing the semiconductor component.

[0005] Background and state of the art

[0006] It is known that a wide variety of components can be constructed using semiconductor technology methods. Such components are also referred to as semiconductor devices. Semiconductor devices can, in particular, have structures with sizes and dimensions in the micrometer range. When a mechanical microstructure is combined with an electrical circuit, the device is referred to as a microelectromechanical system (MEMS), MEMS device, MEMS system, or MEMS element.

[0007] MEMS elements can combine logic elements and micromechanical structures on a single chip. Due to their ability to process and / or generate mechanical and electrical signals, they are ideal for a wide range of applications, such as sensors, actuators, filters, and / or oscillators.

[0008] Today, MEMS elements form an important technical basis for solutions in microelectronics. Compared to conventional macrosystems, they offer advantages primarily in cost savings due to low material consumption and / or the possibility of parallel production, as well as in efficiency, which is made possible by lower energy and power requirements.

[0009] The choice of materials for the components of a semiconductor device is a relevant factor for its functionality and manufacturing process. Various materials have proven themselves in the state of the art, each with its own advantages.

[0010] Fedder (2003) provides an overview of known materials for micromechanical applications, classifying them into five main categories: structural materials, substrate materials, spacer materials, sheet materials, and active materials. The structural material and the substrate material, which may be one and the same, must be able to withstand various processing steps. Relevant properties of the structural material include the elastic modulus, density, residual stress and stress gradients, electrical and thermal conductivity, and the long-term stability of these properties. Spacer materials are typically completely or partially etched away to expose the microstructure and, due to this function, are often referred to as sacrificial materials or sacrificial layers. Spacer materials can also be used to create molds for structures.Surface materials or insulation materials can be used to protect the substrate or structural material from certain etching steps. Surface materials are also important for achieving electrical insulation. Active materials are applied to structures to utilize their special physical properties or effects to generate and / or read a signal. Common physical properties and / or effects used in this process are piezoelectric effects.

[0011] In the context of microsystems technology, silicon and / or gallium arsenide are particularly frequently used as materials for (base) substrates. These materials have proven particularly suitable for sensor elements and / or actuator elements made from the material. Furthermore, silicon and gallium arsenide are comparatively inexpensive semiconductor materials and can be fabricated and / or packaged using established processes. In particular, their electrical conductivity can be significantly improved through doping. Regarding the possibilities for improving the functionality of a semiconductor component with regard to the selection and / or processing of semiconductor materials, reference can be made to Rahman (2014).

[0012] Other materials, such as quartz, Pyrex, polymers, ceramics, and / or plastics, can also be used as substrates in semiconductor technology and / or microsystems technology. Such materials can also be used as so-called packaging or package substrates to encapsulate MEMS elements and thus ensure particularly good protection.

[0013] With regard to insulation materials or insulation layers, various materials have also proven themselves. The dielectric materials used for this purpose are used in particular to enable insulation for electronic contacts and / or to protect the MEMS element and / or an electronic circuit from unwanted electrical effects. A well-known insulation material is silicon dioxide. The selection of dielectric materials can be crucial for the functionality of the semiconductor component, as they can influence, for example, parasitic capacitances and / or inductances. Reducing parasitic capacitances is particularly relevant in the field of high-frequency applications. The state of the art pursues the approach of reducing the permittivity of the dielectric material, for example, through the use of so-called low-k materials (see also Shamiryan et al. (2004)).

[0014] To provide a housing to protect a MEMS element and / or an electronic circuit, encapsulation using a lid substrate (also known as wafer capping) has proven particularly useful. Substrate materials such as silicon can also be used for this purpose. The lid substrate serves to protect a MEMS element and / or an electronic circuit. For this purpose, the lid substrate is connected to the base substrate, i.e. the substrate which contains the MEMS element and / or the electronic circuit, for example by bonding. This makes it possible to maintain a desired pressure within the encapsulation, e.g. a vacuum, so that a hermetic or near-hermetic seal can be achieved (see also Heakyoung (2013)). It is known that in addition to the electrical orIn addition to the dielectric properties, certain mechanical and / or thermal requirements of the materials used for the semiconductor component must also be met to ensure optimal operation. In particular, reliable protection and a long service life of the semiconductor component must be ensured. The semiconductor component should be able to withstand vibrations and not experience any significant expansion due to thermal effects, thus preventing structural changes.

[0015] Both the electrical, dielectric and mechanical properties of components of a semiconductor device can be optimized by the chemical structure, the processing-related morphology and by the fillers and / or reinforcing materials used for the materials used.

[0016] However, there are also some disadvantages with respect to known materials and manufacturing processes for semiconductor devices. For example, to process components of semiconductor devices and / or MEMS elements, chemical reactions often have to be induced during the actual manufacturing process, for example, to harden a composition. Such chemical reactions often require the addition of heat (e.g., using a laser or furnace), making the process more complex and costly. Furthermore, certain materials and / or components of a semiconductor device and / or MEMS element may have critical temperatures—for example, approximately 130°C—that should not be exceeded to avoid undesired structural changes.

[0017] A further difficulty arises with regard to the shaping of semiconductor components, particularly when using materials such as glasses and / or single crystals, which may be of high quality but cannot be optimally shaped structurally during a manufacturing process. Other materials that may be easier to shape, such as polymers and / or ceramics in additive manufacturing, may have reduced hermetic sealing due to inhomogeneities, which could impair the lifetime of the semiconductor component.

[0018] Therefore, there is a need in the state of the art to provide semiconductor components with improved material properties.

[0019] Object of the invention

[0020] The object of the invention was to eliminate the disadvantages of the prior art. In particular, it was an object of the invention to provide semiconductor components and methods for their production that are characterized by optimized functionality, high cost-effectiveness, and process-efficient and cost-effective production.

[0021] Summary of the invention

[0022] The object of the invention is achieved by the independent claims. Advantageous embodiments of the invention are disclosed in the dependent claims. In a first aspect, the invention relates to a semiconductor component comprising a MEMS element and / or an electronic circuit, wherein the MEMS element and / or the electronic circuit is incorporated on or in a base substrate, characterized in that the base substrate comprises a concrete material, the semiconductor component has an insulating layer comprising concrete material for insulating an electrical connection and / or the MEMS component and / or the electronic circuit is at least partially enclosed by a protective sheath comprising concrete material.

[0023] The inventors have recognized that, surprisingly, the use of concrete material can significantly improve both the structural and functional properties of a semiconductor component. In particular, they have recognized that a variety of desired effects can be achieved and combined with concrete material, which are particularly advantageous in the manufacture of semiconductor components and for the semiconductor components themselves.

[0024] For this purpose, the invention provides that at least one component of the semiconductor device comprises a concrete material. Preferably, several components can also comprise a concrete material. Preferably, the base substrate, the insulation layer (also known as the insulating layer), and / or the protective sheath comprise a concrete material.

[0025] The use of concrete material, for example, for the base substrate, advantageously enables a particularly homogeneous surface. Furthermore, the smoothness of the surface of the base substrate can be adjusted both precisely and easily. Furthermore, it is advantageous that additional functional materials, such as metals for providing conductor tracks, can be added to the base substrate in a process-efficient manner. Furthermore, a reliable connection to the MEMS element and / or the electronic circuit, if these are to be applied to the base substrate, is advantageously ensured.

[0026] An insulating layer comprising concrete material also offers advantages for the semiconductor component. Concrete material is dielectric, thus ensuring protection against charge transfer and / or charge equalization. Furthermore, the easy formability, especially the simple structuring, of concrete material makes it particularly useful as an insulating layer, since the structure of the insulating layer allows for optimal adjustment of the electrical and dielectric properties of the semiconductor component. For example, in an insulating layer comprising concrete material, pores can be introduced with little effort, which can be designed to reduce parasitic capacitances.

[0027] Concrete material has also proven advantageous for providing a protective enclosure. In particular, the concrete material can ensure hermetic encapsulation of the MEMS element and / or the electronic circuit. This advantageously prevents material exchange between the environment and the internal components of the semiconductor device, ensuring long-term functionality of the semiconductor device. The use of concrete material has proven advantageous not only structurally, but also for processes and procedures for manufacturing the semiconductor device or individual components of the semiconductor device.

[0028] It is particularly advantageous that the self-curing of the concrete material can be used to manufacture components of the semiconductor device. Self-curing specifically means that the concrete material can harden without the need for additional external energy. This advantageously results in significant process efficiency, as it allows for simple shaping and eliminates the need for additional effort for the reaction required for curing.

[0029] The self-curing of the concrete material is preferably based on cement (as a binding agent). Curing, also known as setting, preferably corresponds to a slow chemical-mineralogical reaction of the cement with water, with water also being a preferred component of the concrete material. The cement is preferably a hydraulic binder that only hardens upon the addition of water. The curing of the concrete material is based, among other things, on hydration as a chemical reaction, which will be discussed in more detail below, without being limited to theory. Therefore, the decisive factors for curing are cement and water as components of the concrete material, rather than the aggregates.

[0030] The ability to utilize the self-curing properties of concrete also advantageously ensures that high temperatures, which could lead to undesirable structural changes in the semiconductor component, do not occur. In particular, it avoids the need to apply temperatures that could be critical to the functionality of components and / or materials of the semiconductor component and / or the MEMS element, for example, a temperature of approximately 130°C.

[0031] Another advantage is that concrete material can be combined with a variety of substances to achieve a desired reaction. For example, metals can be easily integrated into the concrete material to provide conductors for electrical contact. Furthermore, the alkaline property of concrete material can be advantageously used in processing, for example, for in-situ surface conditioning. Furthermore, an alkaline environment in the concrete material is advantageous in that the reaction of the cement with water allows for particularly high strength.

[0032] According to the invention, it was therefore recognized that a number of advantageous technical effects are achieved by the use of concrete material for the production of a semiconductor component, which have a beneficial effect on both the processing and the semiconductor component as such.

[0033] For the purposes of the invention, a semiconductor component preferably refers to a component used for circuits in electrical engineering or electronics, particularly in connection with semiconductor materials. The average person skilled in the art knows that the term "semiconductor component" can be interpreted broadly. For example, a semiconductor component can comprise an integrated circuit having transistors and / or diodes or can itself be such a component. The integrated circuits are preferably manufactured on base substrates. Furthermore, components such as transistors, diodes and / or capacitors can be produced by processing the base substrate. Multiple base substrates can also be used, which can then be divided and form multiple chips. A semiconductor component can also comprise or itself be, for example, a printed circuit board, multiple processors, semiconductor memories, microcontrollers, converters, microchips, etc.A semiconductor component can preferably be manufactured using processes and / or equipment from semiconductor and / or microsystem technology.

[0034] The semiconductor component preferably comprises a base substrate, an insulating layer, and / or a protective sheath. Furthermore, it is preferred that the semiconductor component comprises a MEMS element and / or an electronic circuit. The base substrate is preferably to be understood as the carrier of the MEMS element and / or the electronic circuit. It may also be preferred that the MEMS element and / or the electronic circuit be present within the base substrate. For this purpose, it may be preferred to incorporate MEMS structures into the base substrate, for example, through the use of etching processes. Therefore, it may also be preferred that the MEMS element be part of the base substrate.

[0035] An insulating layer is preferably considered to be a layer that enables electrical insulation, for example, of electrical contacts. Dielectric intermediate layers can also preferably be considered insulating layers in the context of the invention.

[0036] An intermediate layer as an insulating layer preferably means a dielectric layer that is present between at least two components and / or at least two sections of the semiconductor device. For example, it may be preferred for the intermediate layer to be applied between two substrates to enable electrical insulation between these two substrates. The intermediate layer preferably has a planar configuration, i.e., it preferably has a length and / or width that is many times greater than its thickness, preferably by a factor of 1, 5, 2, 3, 4, 5, 6, 7, 8, 9, 10, or more.

[0037] The protective sheath preferably serves to enclose the MEMS element and / or the electronic circuit to prevent material transfer with the environment. For this purpose, it is preferred that the protective sheath be applied at least partially, preferably completely, over the MEMS element and / or the electronic circuit.

[0038] As explained above, it was recognized according to the invention that the use of a concrete material can offer various advantages for providing a base substrate, an insulating layer, and a protective sheath. Such a use of concrete material for the production of semiconductor components is not known in the prior art.

[0039] The aforementioned preferred components can be components of the semiconductor component according to the invention, individually or in combination with one another. Thus, the semiconductor component preferably comprises a base substrate, a protective sheath, and / or an insulating layer. Accordingly, it may be preferred for the semiconductor component to comprise only the base substrate, the protective sheath, or the insulating layer, preferably in combination with a MEMS element and / or an electronic circuit. It may also be preferred for the semiconductor component to comprise the base substrate and the protective sheath, or the base substrate and the insulating layer, or the protective sheath and the insulating layer, or the base substrate and the protective sheath and the insulating layer, preferably in combination with a MEMS element and / or an electronic circuit.

[0040] In the context of the invention, concrete material preferably refers to a material whose chemical composition includes concrete, preferably referring to concrete as a building material. Concrete comprises, in particular, a binder for creating chemical bonds and an aggregate for imparting stability and / or strength.

[0041] In a preferred embodiment, the semiconductor component is characterized in that the concrete material comprises a cement, wherein the cement is preferably selected from a group comprising granulated blast furnace slag, silica fume, pozzolan, fly ash, burnt slate, limestone, calcium sulfate, torsion cement clinker and / or cement clinker, wherein the cement clinker preferably comprises tricalcium silicate, dicalcium silicate, tricalcium aluminate, tetracalcium aluminate ferrite, tricalcium aluminate and / or free calcium oxide.

[0042] Cement is an essential component of concrete and preferably represents a binding agent which results in the setting process. The setting process describes the chemical reaction during which the self-hardening of the concrete material occurs. Cement is primarily a hydraulic binder, which means that the concrete material can harden both in air and under water and is also stable. During hardening, i.e. during the setting process, the cement reacts with water to form insoluble, stable compounds. These compounds, which can be present as calcium silicate hydrates, for example, form fine needle-shaped crystals which interlock with one another and thus lead to the high strength of the cement and thus the self-hardening of the concrete material. During self-hardening, hydration, i.e. an accumulation of water molecules, occurs.

[0043] Cement clinker refers to a solid substance that forms a portion of cement, particularly Portland cement, where Portland cement can be provided by cement clinker and lime or anhydrite. Portland cement comprises approximately 58–66% calcium oxide, approximately 18–26% silicon dioxide, approximately 4 to 10% aluminum oxide, and 2–5% iron oxide. The cement clinker, in particular, is responsible for self-hardening through hydration, which, without wishing to be limited to any one theory, results from the chemical structure of tricalcium silicate, dicalcium silicate, tricalcium aluminate, tetracalcium aluminate ferrite, tricalcium aluminate, and / or free calcium oxide. In the prior art, the terms silicate reaction and aluminate reaction are also commonly used.

[0044] The aforementioned cement types have proven advantageous for the rapid and reliable use of self-curing concrete materials. Furthermore, hydroxide ions can form upon contact with water, making the concrete material alkaline. The hydroxide ions formed upon contact with water can be used, for example, to adjust the nucleophilicity to induce a desired chemical reaction, particularly during processing.

[0045] In a preferred embodiment, the semiconductor component is characterized in that the concrete material is a fiber concrete comprising fibers, wherein the fibers preferably comprise a material selected from a group comprising plastic, steel and / or glass.

[0046] Fiber-reinforced concrete preferably refers to a concrete material that contains fibers and thus includes fiber reinforcement. The fibers can be, for example, plastic, steel, and / or glass fibers. In the case of fiber reinforcement, the matrix is ​​preferably selected from a group comprising cement, cement paste, and / or mortar.

[0047] By incorporating fibers, the concrete material can be advantageously absorbed by (tensile) stresses, thus achieving particularly high levels of strength, stability, and / or hardness. This is particularly useful for the base substrate and / or the protective shell, for example, to improve their protective function. This also provides a protective effect when the semiconductor component is exposed to mechanical stresses such as vibrations or similar.

[0048] Advantageously, fiber parameters can be used to adjust further properties for the concrete material and thus for the semiconductor component. Fiber parameters (also known as fiber properties) can be selected from a group comprising fiber materials (preferably plastic, steel, and / or glass), fiber sizes (e.g., micro- and / or macrofibers), and / or fiber geometries (e.g., straight, hooked, corrugated, end-squeezed, and / or end-compressed). The fiber properties can be used to regulate the mechanical, electrical, and optical properties and / or the behavior when exposed to foreign substances. Furthermore, the fiber properties can be used to further optimize the processing properties and / or performance characteristics of the concrete material for the semiconductor component.

[0049] In a preferred embodiment, the semiconductor component is characterized in that the concrete material has a pore structure, wherein the pore structure preferably has pores with a diameter selected between 1 nm - 200 nm, preferably between 2 - 50 nm, particularly preferably between 5 nm - 40 nm.

[0050] The presence of a pore structure in the concrete material is particularly beneficial for the insulating layer of the semiconductor component. This can reduce parasitic capacitances between two or more conductive sections, e.g., conductor tracks or vias. The formation of parasitic capacitances is a well-known problem in semiconductor and microsystem technology. Parasitic capacitances arise, among other things, when two or more conductive regions with different voltages are located close to one another, so that the electric field between them stores an electrical charge on them. The effect of parasitic capacitance is particularly relevant in high-frequency applications. The pore structure of the concrete material, especially for the insulating layer, can advantageously reduce the material density and thus the dipole density. This reduces the relative permittivity and thus also the parasitic capacitance.This advantageously makes it possible to easily create a desired pore structure in the concrete material. In particular, the pore structure can be easily and precisely adjusted by the method used to apply the concrete material. The aforementioned preferred pore diameter ranges have proven particularly useful for reducing parasitic capacitances.

[0051] In a preferred embodiment, the semiconductor component is characterized in that the concrete material has a roughness, wherein the roughness preferably has a mean roughness value in a range between 0.01 pm and 100 pm, preferably between 1 pm and 50 pm, particularly preferably between 5 pm and 20 pm.

[0052] The term "roughness" is preferably used to describe the unevenness of a surface, particularly its surface height. The mean roughness preferably refers to a parameter that characterizes the roughness of a surface. The lower the mean roughness, the less rough and the smoother the surface. These mean roughness values ​​have proven advantageous for providing sufficiently smooth surfaces for the functionality of the semiconductor component. The smooth surface is particularly advantageous for the base substrate and / or the protective sheath.

[0053] For the base substrate, the smoothness, particularly due to the aforementioned preferred mean roughness values, is advantageous in that additional coatings can also be applied smoothly. This advantageously eliminates complex process steps, such as planarization, to ensure sufficiently smooth design of insulating layers and / or other layers.

[0054] A smooth surface is advantageous for the protective cover, among other things, because it prevents adhesion in the event of contact with a foreign substance, such as a liquid. It can also be advantageous for preventing adhesion to the concrete material, such as sticking, or for enhancing the protective effect of the protective cover.

[0055] In a preferred embodiment, the semiconductor component is characterized in that the base substrate comprises the concrete material, wherein the MEMS element and / or the electronic circuit is present on a surface of the base substrate and / or is integrated into the base substrate.

[0056] For the purposes of the invention, the base substrate preferably refers to a flat, preferably disc-shaped, body whose width and / or length is significantly greater than the thickness of the body. The length and / or width of the base substrate can be greater than the length and / or width by a factor of 1.5, 2, 3, 4, 5, or more. The thickness of the base substrate can, for example, be in the millimeter or submillimeter range. The base substrate preferably serves as a carrier for the MEMS element and / or the electronic circuit.

[0057] The base substrate preferably comprises a concrete material. The surface properties of the base substrate can advantageously be precisely adjusted through the use of concrete material. In particular, a permanent bond between the base substrate and the electronic circuit and / or MEMS element can advantageously be achieved through adhesion, if the latter is to be applied to the base substrate. Furthermore, the roughness or smoothness of the surface can advantageously be optimized so that further layers applied to the base substrate can also be essentially homogeneous.

[0058] Furthermore, the easy processability of concrete material makes it possible to easily obtain a desired shape for the base substrate. For example, the base substrate can have a geometric shape that is round or square in cross-section. For this purpose, it may be preferable to introduce the concrete material into a shaping component, wherein the shaping component can preferably act as a matrix for the mold. For shaping the base substrate, it may also be preferable to specify parameters of a process by which the concrete material is applied and thus directly obtain a shape for the base substrate. Preferably, the concrete material is applied in paste form, and the self-curing of the concrete material is used to determine the shape of the base substrate.Advantageously, the degrees of freedom with which the shape of the base substrate can be determined are easier than for other common materials used in semiconductor and / or microsystem technology. For example, slopes, depressions, and / or cavities can be incorporated into the base substrate particularly easily. The easy formability offered by the use of concrete material also applies to components such as insulating layers and / or protective sheaths.

[0059] The base substrate can preferably also comprise a concrete material if the base substrate has an SOI construction. An SOI construction is known in the art as a construction of substrates that have a dielectric oxide layer between two semiconductor layers. Thus, it may be preferred for the base substrate comprising concrete material to have a first concrete material layer, a dielectric layer positioned thereon, and a second concrete material layer thereon.

[0060] The base substrate comprising concrete material can preferably also be in the form of a circuit carrier, preferably an injection-molded circuit carrier (Molded Interconnect Device, abbreviated to MID). Advantageously, the base substrate can be structured with a high degree of design freedom and can incorporate electrical connections, such as conductor tracks and / or vias, so that a significantly miniaturized semiconductor component can be provided.

[0061] It is also advantageously possible to configure the base substrate comprising concrete material as a package substrate. A package substrate can advantageously provide a carrier and, at the same time, a protective covering for a MEMS element and / or an electronic circuit. For this purpose, it is preferred that the package substrate has notches into which the MEMS element and / or the electronic circuit can be inserted. Covers are preferably provided above the notches, which at least partially surround the MEMS element and / or the electronic circuit as a protective covering.

[0062] Thus, the use of concrete material advantageously allows known structures for the base substrate to be imitated and their properties optimized. Furthermore, MEMS structures for the MEMS element can be particularly easily incorporated into the base substrate. MEMS structures preferably refer to sections in the micrometer range (e.g., 1 pm - 1000 pm) and serve to provide the MEMS element. MEMS structures are preferably incorporated into the base substrate in order to integrate MEMS elements into the base substrate. It may also be preferable to form one or more cavities in the base substrate in order to create a free volume in which the MEMS element and / or the electronic circuit can be incorporated. This advantageously allows a high degree of compactness of the semiconductor component and simultaneous protection of sensitive MEMS elements to be achieved.

[0063] The use of concrete material for the base substrate has proven particularly advantageous, particularly for the geometric design and / or for the introduction of structures, such as MEMS structures and / or cavities. Due to the self-curing effect, structures for the base substrate can be present without requiring a high level of processing effort. For example, an etching process is preferably not necessary to design the structures or cavities. Instead, a desired shape and / or structure can preferably be provided through a setting process during the provision of the base substrate using an appropriate shaping component, for example, in order to achieve curing and / or strength at room temperature.

[0064] Advantageously, the use of concrete material for the base substrate allows for the simple introduction of various MEMS structures that serve to provide the MEMS element. The MEMS structures can be selected from a group comprising translatable, rotatable, oscillatable, lamellar, and / or meander-like MEMS structures. Advantageously, many MEMS structures can thus be provided to form the MEMS element. Preferably, the MEMS element is connected electronically to generate signals at the MEMS element or read signals from the MEMS element. Thus, advantageously, a large number of MEMS structures can be introduced into the base substrate comprising concrete material, so that a large number of MEMS elements can be present on or in the base substrate.

[0065] In a further preferred embodiment, the semiconductor component is characterized in that the base substrate comprises a concrete material and an additive, wherein the additive is preferably activatable by an ablation process to form active regions and the active regions are usable by metallization to provide for the electrical connection of the MEMS element and / or the electronic circuit.

[0066] The additive preferably refers to a further additional substance that is present in or on the base substrate. The additive can preferably be selected from a group comprising aluminosilicates, preferably tectoalumosilicates. It is known that aluminosilicates have a pore structure. The aluminosilicates as additives, which are preferably incorporated into the concrete material, can be activated by the ablation process, so that a metal, e.g. a precious metal, can accumulate in the pores of the pore structure. Following this, electroless metallization can preferably be carried out, in which metal is deposited starting within the pores and also in an outer edge region of the pores. Thus, a flat metallization layer can be formed in a targeted manner on the surface of the base substrate. The ablation process preferably used is a process that enables activation of the additive.Activation preferably refers to a state in which a reaction, for example, bonding with a metal, is favored. The ablation process can be carried out, for example, by the emission of electromagnetic radiation, in particular by laser beams. Metallization, i.e., the application of metal, can be carried out, for example, in a chemically reductive metal bath, e.g., a copper bath.

[0067] Concrete material is advantageously suitable as a carrier for such an additive in order to carry out metallization using an ablation process so that an electrical connection for the MEMS element and / or the electronic circuit can be provided.

[0068] In a preferred embodiment, the semiconductor component is characterized in that the insulating layer comprises a concrete material, wherein the insulating layer is preferably present at least partially on the electrical connection and / or encases an electrical connection.

[0069] The electrical connection can, for example, be selected from a group comprising conductor tracks, conductor track levels, and / or vias. Concrete material as a dielectric material can advantageously be adapted to the shape of the electrical connection to ensure optimal electrical insulation. The concrete material can also preferably be optimally applied to bond wires to enable insulation for electrical contacts between, for example, the MEMS element and the electronic circuit.

[0070] In a preferred embodiment, the semiconductor component is characterized in that the insulating layer comprises a concrete material, wherein the insulating layer preferably has a pore structure.

[0071] A pore structure can advantageously improve the functional capability of the semiconductor component. As explained above, the presence of a pore structure, for example, can reduce parasitic capacitances between electrical connections. This can be explained, among other things, by the fact that the pore structure comprising pores reduces the dipole density.

[0072] In a preferred embodiment, the semiconductor component is characterized in that the protective covering is selected from a group comprising a protective layer and / or a cover substrate.

[0073] The aforementioned preferred options, comprising a protective layer and / or a cover substrate, have proven effective in enabling secure hermetic encapsulation of the MEMS element and / or the electronic circuit, thus achieving reliable protection from the environment. The use of concrete material for both a protective layer and a cover substrate is advantageous.

[0074] In a preferred embodiment, the semiconductor component is characterized in that the semiconductor component has a protective layer comprising concrete material, wherein the protective layer is preferably present in a surface-conforming manner on the MEMS element and / or the electronic circuit. The protective layer preferably refers to a layer that can be applied to components of the semiconductor component, such as the MEMS element and / or the electronic circuit. The use of concrete material advantageously enables the application of the protective layer with particular precision, thus enabling even localized coverings.

[0075] In particular, it is advantageously possible to apply a protective layer comprising concrete material to the components of the semiconductor device in a surface-conforming manner. A surface-conforming protective layer refers, in particular, to a layer that essentially lies directly and tightly against the underlying components in a shape-preserving manner. Essentially directly and tightly adjacent preferably means that the protective layer is mostly in direct contact, but in some areas includes volumes not filled by components, for example, in corner areas or beneath a wire bond.

[0076] The surface-conforming protective layer is preferably completely surface-conforming. This means, in particular, that the protective layer is almost perfectly tight-fitting or surface-conforming, and even the smallest structures are coated tightly.

[0077] The smallest structures are preferably structures with dimensions of a maximum of 10 nanometers (nm), a maximum of 100 nm, a maximum of 1 micrometer (pm), a maximum of 10 pm, or a maximum of 100 pm. By applying a surface-conforming protective layer comprising concrete material, a hermetic, space-optimized protective layer can be applied extremely cost-effectively. On the other hand, a surface-conforming protective layer allows a high degree of flexibility with regard to a targeted opening or recess in the protective layer in an interaction region of the MEMS element. The MEMS interaction region preferably refers to a functional component of the MEMS element that interacts with an external medium in the desired manner. In the case of an acoustic MEMS transducer, for example, this is a MEMS membrane. In the case of an optical MEMS transducer, for example, it is an optical emitter.

[0078] The protective layer, which can preferably be surface-conformal, preferably has a thickness of approximately 10 nm (nanometers) to 1 mm (millimeters). It may also be preferred that the protective layer has a thickness of approximately 10 nm to 100 nm, approximately 100 nm to 200 nm, approximately 200 nm to 500 nm, approximately 500 nm to 1 pm (micrometer), approximately 1 pm to 5 pm, approximately 5 pm to 10 pm, approximately 10 pm to 50 pm, approximately 50 pm to 100 pm, approximately 100 pm to 500 pm, or approximately 500 pm to 1 mm. A person skilled in the art will recognize that the aforementioned range limits can also be combined to obtain further preferred ranges, such as approximately 100 nm - 1 pm, approximately 500 nm - 5 pm or approximately 200 nm - 10 pm.

[0079] The preferred thicknesses for the protective layer advantageously result in excellent protection of the MEMS element and / or electronic circuit while maintaining a compact design and ensuring high functionality. Furthermore, the preferred thicknesses for the protective layer can be provided easily, cost-effectively, and quickly using proven methods in the art.

[0080] Terms such as substantially, approximately, about, etc. preferably describe a tolerance range of less than ± 20%, preferably less than ± 10%, even more preferably less than ± 5%, and especially less than ± 1%. Terms such as substantially, approximately, about, about, etc. always disclose and include the exact value stated.

[0081] In a preferred embodiment, the semiconductor component is characterized in that the semiconductor component has a cover substrate comprising concrete material, wherein the cover substrate preferably covers the MEMS element and / or the electronic circuit and is integrally connected to the base substrate.

[0082] The cover substrate preferably refers to a substrate with which the MEMS element and / or the electronic circuit can be covered or enclosed. The cover substrate can preferably be a conventional substrate or an SOI wafer comprising concrete material. Advantageously, a cover substrate comprising concrete material can be bonded to the base substrate in a material-to-material bond, enabling a stable connection between the base substrate and the cover substrate. This advantageously provides particularly good protection for components on or in the base substrate. A material-to-material bond comprises connections in which the base substrate and the cover substrate are held together by atomic or molecular forces. Material-to-material bonds are also non-detachable bonds that can only be separated by destroying the bonding agents.

[0083] The cover substrate can preferably have substantially the same structure as the base substrate. In particular, it can be preferred for the cover substrate to be substantially flat, i.e. a length and / or width of the cover substrate is many times greater than a height of the cover substrate, preferably at least by a factor of 1, 5, 2, 3, 4, 5, 6, 7, 8, 9, 10 or more. Furthermore, the cover substrate and / or the base substrate can preferably have a cavity, wherein the cover substrate and the base substrate are preferably connected to one another in such a way that a cavity is formed within the semiconductor component, in which cavity the MEMS element and / or the electronic circuit is preferably placed. The base substrate can preferably be connected to the cover substrate at lateral regions of the base and cover substrates which enclose one or both cavities.This advantageously makes it possible to provide, using simple means, a cost-effective, compact and robust semiconductor component within which a MEMS element and / or an electronic circuit can be placed in a protected manner.

[0084] Due to the easy formability of concrete material, it is also advantageous to incorporate structures such as bevels, notches, depressions, grooves, or other structures into the lid substrate. This advantageously allows for optimal adaptation to a storage space for the semiconductor component. Thus, the use of concrete material provides significantly increased design freedom for the semiconductor component as a whole.

[0085] In a preferred embodiment, the semiconductor component is characterized in that the MEMS element is selected from a group comprising an acoustic MEMS transducer, optical MEMS transducer, MEMS sensor, in particular a MEMS gas sensor and / or MEMS filter. Advantageously, reliable operability and optimal usability can be ensured for a large number of MEMS elements if at least one component of the semiconductor component comprises a concrete material. For example, it may be preferred for the MEMS structures for providing the MEMS element to comprise a concrete material. It may also be preferred for one or more insulating layers to comprise a concrete material, which in particular enables secure electronic insulation. Furthermore, it may be preferred for the protective sheath to comprise a concrete material, thus enabling reliable protection for the MEMS element.

[0086] A MEMS transducer preferably refers to a MEMS converter, i.e., a MEMS element capable of converting energy from one form to another. In particular, in a MEMS transducer, the input signal differs from the output signal in terms of the signal type.

[0087] Preferably, the MEMS transducer is selected from a group comprising an acoustic MEMS transducer and / or an optical MEMS transducer.

[0088] An acoustic MEMS transducer is configured to interact with a volume flow of a fluid, with the MEMS structures being designed to interact with the volume flow or to record or generate pressure waves. The fluid can be either a gaseous or a liquid.

[0089] An acoustic MEMS transducer is a MEMS transducer that uses an acoustic signal, preferably sound pressure waves, during the conversion of an energy form and / or a signal type. Thus, with an acoustic MEMS transducer, either the input signal or the output signal is an acoustic signal. For example, an acoustic MEMS transducer can be a MEMS loudspeaker or a MEMS microphone. A MEMS loudspeaker, for example, is configured to generate an acoustic signal from an electrical signal. A MEMS microphone, for example, is configured to generate an electrical signal from an acoustic signal.

[0090] An optical MEMS converter refers to a MEMS converter in which the input signal or the output signal is an optical signal. An optical signal preferably means light, which can have a wavelength in the visible or non-visible range. For example, an optical MEMS converter can convert light as an input signal into an electrical signal. For example, in an optical MEMS converter, light can fall onto an electrode surface and electrons can be emitted from the electrode surface. Likewise, it can be the case, for example, that in an optical MEMS converter, the resistance of a material changes when it is illuminated. Furthermore, a functional principle can exist that generates an output voltage that is proportional to the radiation intensity. Likewise, for example, in an optical MEMS converter, light can be emitted starting from an electrical quantity, such as, for example,with an OLED, LED, electroluminescent lamp, etc.

[0091] In further preferred embodiments, the MEMS element is a MEMS sensor, in particular a MEMS gas sensor and / or MEMS filter. A MEMS sensor can, for example, comprise a capacitively or optically readable, piezoelectric, piezoresistive, and / or magnetic beam and / or a capacitive, piezoelectric, piezoresistive, and / or optical microphone or membrane to detect a physical, chemical, and / or biological variable.

[0092] The MEMS sensor is preferably a MEMS gas sensor. A MEMS gas sensor is preferably capable of detecting a gas as such and / or a concentration of a gas. A MEMS gas sensor can, for example, be based on the principle of photoacoustic spectroscopy. Photoacoustic spectroscopy preferably uses intensity-modulated infrared radiation with frequencies in the absorption spectrum of a molecule to be detected in a gas. If this molecule is present in the beam path, modulated absorption occurs, leading to heating and cooling processes whose timescales reflect the modulation frequency of the radiation. The heating and cooling processes lead to expansions and contractions of the gas, causing sound waves with the modulation frequency. These can be measured, for example, by sound detectors and / or flow detectors.The power of the sound waves is preferably directly proportional to the concentration of the absorbing gas.

[0093] In a further preferred embodiment, the MEMS sensor is a MEMS filter, preferably a MEMS frequency filter, in particular a SAW or BAW filter. A SAW filter is preferably a surface acoustic wave filter (also SAW filter), which in particular represents a bandpass filter for electrical signals. BAW filters (bulk acoustic wave) are preferably similar electronic filters with bandpass characteristics. However, unlike SAW filters, these preferably have a base substrate through which the acoustic waves propagate.

[0094] In preferred embodiments, the semiconductor component comprises a MEMS element. In further preferred embodiments, the semiconductor component comprises an electronic circuit. In further preferred embodiments, the semiconductor component comprises a MEMS element and an electronic circuit.

[0095] In a preferred embodiment, the semiconductor component is characterized in that the electronic circuit is selected from a group comprising a computing unit, a processor, a microprocessor, an integrated circuit (IC), an application-specific integrated circuit (ASIC), a programmable logic circuit (PLD), a field programmable gate array (FPGA) and / or a programmable logic circuit.

[0096] In a further aspect, the invention relates to a method for producing a semiconductor component comprising the following steps: a) providing a base substrate, b) attaching a MEMS component and / or an electronic circuit onto or into the base substrate, characterized in that the base substrate comprises a concrete material, an insulating layer comprising a concrete material is applied to insulate an electrical connection and / or a protective sheath comprising concrete material is applied, which at least partially encloses the MEMS component and / or the electronic circuit.

[0097] The average person skilled in the art recognizes that technical features, definitions, advantages and preferred embodiments for the semiconductor device according to the invention also apply to a method for producing the semiconductor device and vice versa.

[0098] The preferred method for manufacturing the semiconductor component advantageously achieves a significant process improvement, as the self-curing of the concrete material can be utilized. Self-curing can, for example, occur even at room temperature. Thus, it is not necessary to integrate additional process steps to cure the concrete material and thus achieve final shaping. This advantageously reduces both the complexity of the process and the costs, as, for example, concrete material is more cost-effective than the use of a heating furnace for drying and / or curing. For example, the concrete material can be introduced in a pasty state, taking into account a desired shape, and then dry independently.

[0099] Concrete material solidifies not only through drying itself, but also through the chemical process of setting. The cement and water in the concrete material can form a cement paste, which crystallizes and bonds firmly with other components of the concrete. In concrete material, the evaporation of water is preferably not relevant to curing and only occurs partially. Instead, water remains in the concrete material during the setting process and is important for its strength. During the setting process, curing occurs based on the binding agent, which in the case of concrete material is cement.Particularly given that the dimensions of semiconductor components in semiconductor and / or microsystem technology are many times smaller than the conventional use of concrete material, the self-curing of the concrete material can be efficiently utilized to advantageously obtain finished semiconductor components quickly, especially in the context of mass production. A particular advantage is that concrete material can be used during processing at temperatures below a critical temperature that could adversely affect components of the semiconductor component. In particular, sufficiently reliable shaping of components of the semiconductor component, e.g., MEMS structures for providing the MEMS element, is ensured.Furthermore, the self-curing of the concrete material can advantageously occur at temperatures below temperature ranges that could be critical for components and / or materials of the semiconductor device. Thus, self-curing is advantageously possible at temperatures between 20°C and 100°C, preferably between 20°C and 80°C, particularly preferably between 30°C and 60°C. In particular, self-curing can advantageously occur at room temperature. A particular advantage is that an external energy supply for curing and / or solidification is not necessary.

[0100] Furthermore, it is advantageous that the concrete material can be combined with a variety of functional materials, especially to trigger a chemical reaction that can lead to components of the semiconductor device, such as metallization for the creation of electrical connections. The basic property of the concrete material must be taken into account here, but this can also be advantageously utilized, as hydroxide ions are present as active ions and enable rapid bonding and / or reaction.

[0101] Advantageously, concrete material is also particularly easy to process, for example, to achieve a desired shape and / or structure. This makes it particularly easy to form MEMS structures into the base substrate to provide the MEMS element. In particular, shapes and / or structures can be adjusted using a process that allows the concrete material for a component of the semiconductor device to be produced.

[0102] In a preferred embodiment, the method is characterized in that the concrete material is applied and / or processed by a method selected from a group comprising film casting, injection molding, additive manufacturing, embossing and / or joining, wherein a pore structure and / or roughness can preferably be adjusted by a selection of parameters of the method.

[0103] Concrete material can be advantageously used in a number of manufacturing processes used in the context of semiconductor and / or microsystem technology to produce semiconductor components. These processes have proven themselves in the state of the art and ensure optimal operation and essentially error-free production of semiconductor components. These processes also advantageously allow for the reliable adjustment of the shape and / or structure of the concrete material for one or more components of the semiconductor component.

[0104] Tape casting is a primary forming process used to produce thin and / or large-area films containing concrete material. The concrete material flows from a storage container with an adjustable slot at the bottom, pressure-free and bubble-free, under a drum (drum casting) or an endless copper belt (belt casting). The concrete material can also be evenly spread using an adjustable blade.

[0105] Process parameters can be monitored particularly easily and reliably during tape casting. Tapes containing concrete material produced by tape casting are advantageously characterized by a very homogeneous, air-bubble-free, and shrinkage-free surface.

[0106] Injection molding is also a primary molding process. In this process, an injection molding machine injects the concrete material into a mold, the injection mold, under pressure. Within the injection mold, the concrete material returns to its solid state through cooling or a crosslinking reaction. After the injection mold is opened, it is removed as a finished part.

[0107] Additive manufacturing encompasses manufacturing processes in which material, including concrete, is applied layer by layer to create three-dimensional objects. The layer-by-layer buildup is computer-controlled according to one or more specified dimensions and / or shapes. Physical and / or chemical hardening and / or melting processes take place during the buildup. Embossing involves machining the surface of the concrete material using dies to create desired structures, such as pores, reliefs, depressions, cavities, etc. Embossing can also be used to correct dimensional and / or shape deviations of a component of the semiconductor device.

[0108] Joining refers to general processes by which at least two components of a semiconductor device can be permanently connected (joined). In the context of semiconductor and / or microsystem technology, this includes, in particular, welding, soldering, adhesive bonding, and / or assembly and connection techniques such as bonding.

[0109] While in the prior art, concrete materials are mostly used only for macroscopic components, it was recognized according to the invention that, in particular with the aforementioned primary forming processes, extremely filigree structures can also be provided, which allow the production of a semiconductor component comprising structures and / or components in the micrometer range.

[0110] In a preferred embodiment, the method is characterized in that the concrete material is applied in pasty form, preferably using self-curing of the concrete material through an exothermic reaction.

[0111] A pasty form of the concrete material means that the concrete material is in the form of a paste, i.e. as a solid-liquid mixture. The concrete material as a paste can be characterized by the solids content and / or the viscosity. The concrete material in the form of a paste preferably comprises a solids content of between 30% - 80%, preferably between 50% - 70%. The solids content is particularly preferably more than 50%. In its pasty state, the concrete material preferably has a viscosity of between 1 - 3000 mPa s (millipascals times second), preferably between 1 - 1000 mPa s, particularly preferably between 1 - 500 mPa s, and most preferably between 1 - 200 mPa s. In particular, the paste is characterized in that it is preferably not flowable, but is spreadable.

[0112] Preferably, the self-curing of the concrete material is used to provide the semiconductor component and / or components of the semiconductor component. In particular, hydration occurs, i.e., the deposition of water molecules. The hydration of calcium oxide, magnesium oxide, and / or cement to form calcium hydroxide, magnesium hydroxide, and / or calcium silicate hydrates is particularly relevant for the use of concrete materials. Without being limited to theory, the setting process on which the self-curing of the concrete material is based is an exothermic reaction.

[0113] In a preferred embodiment, the method is characterized in that the base substrate comprises a material comprising concrete and the base substrate comprises an additive, wherein preferably the additive is activated by an ablation process so that active regions are formed and the active regions are used by metallization to provide an electrical connection of the MEMS component, wherein preferably the electrical connection, preferably a conductor track, is introduced by a galvanic process.

[0114] The additive can preferably be selected from a group comprising aluminosilicates, preferably tectoalumosilicates. Activation puts the additive into a state in which a reaction or reaction type can proceed at a higher rate or yield. The use of an ablation process has proven to be a particularly reliable method for activating the additive. Activating the additive can advantageously enable a reliable bond with the material for metallization, for example, to provide electrical connections, preferably conductor tracks. Metallization is preferably carried out using a galvanic process.

[0115] Through the galvanic process, a metal can be dissolved from a positive pole (anode) and transferred to the negative pole (cathode) via an electric current through a bath containing an electrolyte. The metal ions dissolved in the bath are deposited on the activated areas by reduction, preferably by establishing electrical contact with the negative pole. Alternatively, the metal ions can also be present in the electrolyte as a solution. Through a galvanic process, the metal ions are advantageously deposited particularly evenly, allowing structurally homogeneous electrical connections to be created.

[0116] In a further aspect, the invention relates to the use of a concrete material for producing a semiconductor component.

[0117] The inventors have recognized that concrete material can be used in the context of semiconductor and / or microsystem technology, which has a beneficial effect on the structure and manufacturing process of semiconductor components. One or more components of the semiconductor component can comprise concrete material, such as the base substrate, an insulating layer, and / or a protective sheath. Concrete material is also extremely well suited for integration into proven processes for manufacturing semiconductor component components. Thus, the use of concrete material in the manufacture of a semiconductor component represents a significant improvement over the prior art. Such a use of concrete materials was previously unknown in the prior art.

[0118] BIBLIOGRAPHY

[0119] Fedder, Gary K. "MEMS fabrication." International Test Conference, 2003. Proceedings. ITC 2003. IEEE Computer Society, 2003.

[0120] Rahman, Md Atikur. "A review on semiconductors including applications and temperature effects in semiconductors." American Academic Scientific Research Journal for Engineering, Technology, and Sciences 7.1 (2014): 50-70.

[0121] Shamiryan, Denis, et al. "Low-k dielectric materials." Materials today 7.1 (2004): 34-39.

[0122] Park, Heakyoung. "Sealing dispensing requirements to meet MEMS packaging and throughput impact." Additional Papers and Presentations 2013. DPC (2013): 000535-000570.

Claims

PATENT CLAIMS 1. A semiconductor component comprising a MEMS element and / or an electronic circuit, wherein the MEMS element and / or the electronic circuit is incorporated on or in a base substrate, characterized in that the base substrate comprises a concrete material, the semiconductor component has an insulating layer comprising concrete material for insulating an electrical connection, and / or the MEMS component and / or the electronic circuit is at least partially enclosed by a protective sheath comprising concrete material.

2. Semiconductor component according to the preceding claim, characterized in that the concrete material comprises a cement, wherein the cement is preferably selected from a group comprising granulated blast furnace slag, silica fume, pozzolan, fly ash, burnt slate, limestone, calcium sulfate, torsion cement clinker and / or cement clinker, wherein the cement clinker preferably comprises tricalcium silicate, dicalcium silicate, tricalcium aluminate, tetracalcium aluminate ferrite, tricalcium aluminate and / or free calcium oxide.

3. Semiconductor component according to one or more of the preceding claims, characterized in that the concrete material is a fiber concrete comprising fibers, wherein the fibers preferably comprise a material selected from a group comprising plastic, steel and / or glass.

4. Semiconductor component according to one or more of the preceding claims, characterized in that the concrete material has a pore structure, wherein the pore structure preferably has pores with a diameter selected between 1 nm - 200 nm, preferably between 2 - 50 nm, particularly preferably between 5 nm - 40 nm.

5. Semiconductor component according to one or more of the preceding claims, characterized in that the concrete material has a roughness, wherein the roughness preferably has a mean roughness value in a range between 0.01 pm and 100 pm, preferably between 1 pm and 50 pm, particularly preferably between 5 pm and 20 pm.

6. Semiconductor component according to one or more of the preceding claims, characterized in that the base substrate comprises a concrete material and an additive, wherein the additive can preferably be activated using an ablation process to form active regions, and the active regions can be used by metallization to provide the electrical connection of the MEMS element and / or the electronic circuit. Semiconductor component according to one or more of the preceding claims, characterized in that the insulating layer comprises a concrete material, wherein the insulating layer is preferably present at least partially on the electrical connection and / or encases an electrical connection. Semiconductor component according to one or more of the preceding claims, characterized in that the insulating layer comprises concrete material, wherein the insulating layer preferably has a pore structure.The semiconductor component according to one or more of the preceding claims, characterized in that the semiconductor component has a protective layer comprising concrete material, wherein the protective layer is preferably present in a surface-conforming manner on the MEMS element and / or the electronic circuit. The semiconductor component according to one or more of the preceding claims, characterized in that the semiconductor component has a cover substrate comprising concrete material, wherein the cover substrate preferably covers the MEMS component and is integrally connected to the base substrate.Semiconductor component according to one or more of the preceding claims, characterized in that the MEMS element is selected from a group comprising acoustic MEMS transducers, optical MEMS transducers, MEMS sensors, in particular MEMS gas sensors and / or MEMS filters and / or the electronic circuit is selected from a group comprising a computing unit, a processor, a microprocessor, an integrated circuit (IC), an application-specific integrated circuit (ASIC), a programmable logic circuit (PLD), a field programmable gate array (FPGA) and / or a programmable logic circuit. Method for producing a semiconductor component according to one or more of claims 1-11, comprising the following steps: a) providing a base substrate, b) attaching a MEMS component and / or an electronic circuit onto or into the base substrate. characterized in that the base substrate comprises a concrete material, an insulating layer comprising a concrete material is applied to insulate an electrical connection and / or a protective sheath comprising concrete material is applied, which at least partially encloses the MEMS component and / or the electronic circuit. Method according to the preceding claim, characterized in that the concrete material is applied and / or processed by a method selected from a group comprising film casting, injection molding, additive manufacturing, embossing and / or joining, wherein a pore structure and / or roughness can preferably be adjusted by selecting parameters of the method. Method according to one or more of claims 12 - 13, characterized in that the concrete material is applied in pasty form, wherein self-curing of the concrete material by an exothermic reaction is preferably used.Method according to one or more of claims 12 - 14, characterized in that the base substrate comprises a material comprising concrete and the base substrate comprises an additive, wherein preferably the additive is activated by an ablation process so that active regions are formed and the active regions are used by metallization to provide an electrical connection of the MEMS component, wherein preferably the electrical connection, preferably a conductor track, is introduced by a galvanic process.