Electronic component, method for electric insulation, and device for same

Abstract

The invention relates to an electronic component (100) comprising at least one layer (120) in the form of an electrode layer or a semiconducting layer which is structured with at least one first trench (101) and a second trench (102). The at least one layer has two regions (120.1, 120.2) which are continuously electrically insulated from each other. The invention also relates to a method for structuring and mutually electrically insulating two regions (120.1, 120.2) of a layer (120) of an electronic component (100) and to a device for same.

Description

[0001] Electronic component, method for electrical insulation and device therefor

[0002] The invention relates to an electronic component having at least one layer in the form of an electrode layer or a semiconducting layer, which is structured with at least one first trench and a second trench, wherein the at least one layer has two regions that are continuously electrically insulated from one another, a method for structuring and mutually electrically insulating two regions of a layer of an electronic component, and a device therefor. The invention is particularly suitable for laser structuring in optoelectronic components.

[0003] Optoelectronic components include in particular systems that enable the conversion of electronically generated energy into light emission or that convert light emission into energy.

[0004] Photovoltaic elements (OPVs) generate electrical energy and organic light emitting diodes (OLEDs) convert electrical energy into light emissions.

[0005] Organic optoelectronic components, in particular organic photovoltaic elements or organic light-emitting diodes, consist of a sequence of thin layers with at least one photoactive layer, which are preferably vapor-deposited in a vacuum or processed from a solution. The electrical connection can be achieved by metal layers, transparent conductive oxides and / or transparent conductive polymers. DE 10 2004 014 046 A1 discloses a photoactive component, in particular a solar cell, consisting of organic layers of one or more stacked pi, ni and / or pin diodes.

[0006] Organic optoelectronic components are made up of a large number of semiconducting and metallic layers which must be structured during the manufacturing process in order to create individual, electrically insulated regions within the layers. In organic photovoltaic elements, a P1 / P2 / P3 structuring of the electrodes and the layer system of the photovoltaic cells is important, in which a layer system with a photoactive layer is arranged between a first electrode layer and a second electrode layer. A P1 trench interrupts the first electrode layer, a P3 trench interrupts the second electrode layer, and a P2 trench interrupts the layer system, with electrode layers of several photovoltaic cells being ohmically connected to one another.

[0007] For structuring, methods are known in which individual regions, e.g. electrically insulated from one another by trenches, are created in the layers by means of abrasion, i.e. material removal. The material removal can be carried out in particular by means of laser beams, electron beams, or ion beams. So-called scanner units are known for deflecting and specifically guiding laser beams on the surface of the layer. Using such a scanner unit, the laser beam can be guided along a predetermined path, hereinafter referred to as the fictitious target line.

[0008] Since the working range of such scanner units is limited, it may be necessary to structure the layer to be structured section by section, i.e. in several work steps, wherein a substrate carrying the layer is moved continuously or step by step by means of a moving unit, in particular in a roll-to-roll process. The manufacture of photovoltaic elements requires elongated isolation trenches in the electrode and semiconducting layers that extend along a predetermined, fictitious target line. For technical reasons, such elongated isolation trenches have to be arranged in a row from individual, shorter trenches. In order to avoid short circuits between the areas electrically insulated by the elongated isolation trench, the individual, shorter trenches have to be arranged in an overlapping manner. Due to tolerance fluctuations in such a process, e.g.the travel unit, the individual, shorter trenches can in practice be slightly offset laterally in a random, fluctuating manner from the specified, fictitious target line, which can result in the trenches not overlapping or not forming an uninterrupted isolation trench, so that short circuits can occur between the areas that are actually to be electrically insulated during later operation of the electronic component.

[0009] In order to avoid such short circuits, it is known to create short transverse trenches in the layers at the joints of the individual, shorter trenches, running transversely to these trenches.

[0010] WO 2011 / 017571 A2 and EP 3 780 122 A1 describe such methods for the reliable electrical insulation of individual solar cells of a solar cell module by introducing transverse trenches at the seams of the trenches produced parallel to the fictitious target line.

[0011] A disadvantage of the prior art, however, is that due to random fluctuations in the movement of the substrate through the traversing unit, the individual trenches are partially formed on top of one another, whereby the layer at the seams of the trenches is subjected to the abrasion process twice. By introducing the transverse trenches, material is removed a third time at the intersection point of the trenches. This creates the risk that underlying layers at this position will also be inadvertently severed or at least damaged.

[0012] The invention is therefore based on the object of providing an electronic component with a structured layer with regions which are continuously electrically insulated from one another, a method for electrical insulation and a device, wherein the aforementioned disadvantages do not occur, and wherein in particular an insulation trench which runs continuously essentially along a predetermined fictitious target line and is composed of a plurality of trenches is ensured with reduced multiple abrasion compared to the prior art, so that reliable electrical insulation of regions of the layer separated by the insulation trench is provided. The object is achieved by the subject matter of the independent claims. Advantageous embodiments emerge from the subclaims.

[0013] The object is achieved in particular by providing an electronic component comprising a substrate with at least one electrode layer and / or a semiconducting layer, hereinafter generally referred to as "layer", wherein the at least one layer is structured, in particular laser-structured, with at least one first trench and one second trench along a fictitious target line.In this case, a rear end region of the first trench directly intersects a front end region of the second trench, or a third trench additionally arranged transversely to the fictitious target line, hereinafter referred to as a “transverse trench”, intersects the rear end region of the first trench and the front end region of the second trench, wherein a linear region of the first trench and a linear region of the second trench each have a tilt angle relative to the fictitious target line, or the first trench and / or the second trench have at least one non-linear front end region and / or a non-linear rear end region. Due to the arrangement or the geometry of the trenches, the at least one layer has two regions that are continuously electrically insulated from one another.Preferably, the at least one first trench, the second trench, or the at least one first trench, the second trench, and the transverse trench are formed through the entire layer. As a result, two electrically insulated regions are present horizontally within the layer.

[0014] An electrode layer is understood in particular to be a layer in a plane of the electronic component which has electrically conductive regions for supplying or discharging charge carriers into or from other (e.g. semiconducting) regions of the electronic component. A semiconducting layer is understood in particular to be a layer which predominantly contains a semiconducting material or consists entirely of one or more semiconducting materials and thus has the properties of a semiconductor, or is a transport layer, an injection layer or a photoactive layer of a layer system of an optoelectronic component.

[0015] A trench is understood, in particular, to be a channel-shaped depression in a layer, wherein this depression, i.e., a depth of the trench, preferably corresponds to the thickness of the layer into which the trench is introduced. Thus, individual regions of the layer are separated from one another by the trench.

[0016] The term "fictitious target line" defines in particular a predetermined line course on the surface of the layer, i.e. the electrode layer or the semiconducting layer, along which an electrically insulating trench structure is to be formed in the layer. The target line defines the ideal course for the electrically insulating trench structure, which, however, can rarely be adhered to when creating the trenches, e.g. due to technical restrictions and / or parameter deviations. The fictitious target line is therefore a hypothetical specification to which the actual course of the trench structure created essentially approximates.

[0017] The term "structuring" refers in particular to the formation of a structure by ablating layer material to form trench structures, whereby separate regions of a layer are formed. The ablation of layer material can be carried out using energy beams or particle beams. Structuring is preferably carried out using a laser in pulsed or continuous operation.

[0018] In connection with the present invention, the term "intersect" is used in the sense of descriptive geometry, where two intersecting lines have an intersection point or intersection region. Thus, two intersecting trenches have a common region in which the two trenches cross or partially overlap; this common region is preferably almost point-shaped. A "non-linear" front end region and a "non-linear" rear end region are understood to mean, in particular, a region that is non-linear relative to the linear region, i.e. a region that is itself not linear to the linear region. The non-linear end region itself can be linear, curved or angled.

[0019] The term "end zone" refers to the part of the trench or line that lies at the beginning or end in the longitudinal direction. The end zone is only a partial zone of the trench or line, which preferably amounts to a maximum of one third of the total length of the trench or line. The trench or line can therefore be divided into a front end zone, a middle zone and a rear end zone.

[0020] The tilt angle describes the angle that is formed between a linear section of a trench and the fictitious target line. If the trench or the linear section of the trench runs parallel to the fictitious target line, the tilt angle is 0°. If the linear section of the trench is tilted, i.e. rotated, clockwise with respect to the fictitious target line, the tilt angle becomes greater than 0°. If the trench is tilted, i.e. rotated, counterclockwise with respect to the fictitious target line, the tilt angle becomes less than 0°.

[0021] A trench may have one or more linear sections.

[0022] Alternatively, a trench can be completely linear. If a trench has more than one linear region, the linear section of the central region of the trench is used to describe the tilt angle. The central region of a trench is preferably linear, i.e., a trench preferably has at least one straight central region. If the trench is completely non-linear, i.e., the trench in particular has no straight central region, the tilt angle is defined as the angle between the fictitious target line and the straight line running through the two end points in the longitudinal direction of the non-linear trench.

[0023] The term "non-linear" is understood in particular to mean a deviation from straightness, preferably an arcuate, an arbitrarily curved, but also an angled (also multiply) i.e. kinked, course of a line or a trench. If a trench has a non-linear end region, the trench is, for example, angled (kinked) or bent at its end region. If a trench has at least one non-linear end region, it can be provided that the trench has one non-linear end region, two non-linear end regions or an overall non-linear course, i.e. is, for example, completely arcuate or S-shaped.

[0024] The electronic component according to the invention has advantages compared to the prior art. Advantageously, when a layer is laser structuring, the damaged area of ​​an underlying layer is reduced to a minimum. Due to the special arrangement of the structuring, in particular the arrangement, i.e. rotation, of the first and second trench with respect to the fictitious target line and / or the non-linear design of the end regions of the first and / or the second trench, multiple processing of the layers, i.e. multiple ablation of layer material, at the overlapping positions of the trenches is reduced. Advantageously, reliable electrical insulation of regions of the layer from one another is achieved by a continuously through-going insulation trench composed of a plurality of trenches.The electrical dead zone in the vicinity of the trenches does not experience any significant increase, especially compared to the state of the art.

[0025] According to a development of the invention, it is provided that the rear end region of the first trench directly intersects the front end region of the second trench, the first trench and the second trench with their linear regions having the same tilt angle relative to the fictitious target line, and having a non-linear front end region and / or a non-linear rear end region. The first trench and the second trench are therefore designed, with their linear regions, in particular parallel to one another. There is therefore a common intersection point or intersection region between the front end region of one trench and the rear end region of the other trench arranged immediately in front of it in the row of trenches. Advantageously, a transverse trench can be omitted in this development.

[0026] According to a development of the invention, it is provided that the rear end region of the first trench directly intersects the front end region of the second trench, the first trench having a tilt angle relative to the fictitious target line that is different from the tilt angle of the second trench relative to the fictitious target line. In a series of trenches arranged one behind the other, each trench therefore has a tilt angle relative to the fictitious target line that is different from its adjacent trenches. In particular, the tilt angle according to this development can also assume the value zero, or alternatively, in particular, the tilt angle can only assume values ​​greater than zero, preferably greater than 1 °, preferably greater than 2 ° or preferably greater than 5 °.

[0027] In this case, the trenches can have one or two non-linear end regions. However, the trenches can also be completely linear, i.e. non-linear end regions can be omitted. In particular, it can be provided that a trench, e.g. the first trench, has one or two non-linear end regions and the trench arranged adjacent to it in the row, e.g. the second trench, is completely linear. If the first and second trenches are completely linear, the tilt angles of adjacent trenches relative to the fictitious target line preferably each have a different sign. In particular, the trenches can be arranged in the form of a zigzag pattern along the fictitious target line. Advantageously, in this development, a transverse trench can be omitted, as a result of which the layer only experiences double ablation at the positions of the intersection points of the first and second trench.

[0028] According to a development of the invention, a transverse trench is additionally arranged transversely to the fictitious target line, which transverse trench intersects the rear end region of the first trench and the front end region of the second trench, wherein the linear regions of the first trench and the second trench have the same tilt angle relative to the fictitious target line, and wherein the first trench and / or the second trench have a non-linear front end region and / or a non-linear rear end region. In a preferred embodiment, the tilt angle of the linear regions of the first trench and the second trench relative to the fictitious target line is greater than zero, i.e. there is a tilt relative to the fictitious target line.

[0029] According to a further development of the invention, it is provided that the first trench and / or the second trench have a non-linear front end region and / or a non-linear rear end region and a linear region between the front end region and the rear end region, wherein the non-linear front end region and / or the non-linear rear end region of the first trench and / or second trench is angled or arc-shaped relative to the respective linear region.

[0030] An end region angle of the non-linear front end region and / or of the non-linear rear end region is preferably 10° to 90°, more preferably 10° to 70°. At least one end region of the first and / or second trench is therefore non-linear, with the end region angled relative to the linear region, e.g. linear middle region, of the trench or the tangent through the end point of the arc-shaped end region having an end region angle to the linear region of the respective trench of at least 10°, more preferably at most 90°, more preferably 70°. The end region angle is related to the fictitious extension of the linear region, e.g. the linear middle region, of the trench in the direction of the end region, i.e. , the angle between the imaginary extension of the linear section of the trench and the angled end section or the tangent through the end point of the curved end section defines the end section angle.

[0031] In a preferred embodiment of the invention, the tilt angle of the first trench and / or of the second trench relative to the fictitious target line is -15° to 15°, preferably the tilt angle of the first trench and / or of the second trench relative to the fictitious target line is -10° to 10°, preferably -5° to 5°, preferably -2° to 2°, preferably -1° to 1°, or preferably -0.3° to 0.3°, wherein the value 0° is excluded, preferably the values ​​-0.2° to 0.2° are excluded, preferably -0.1° to 0.1°, preferably -0.05° to 0.05°, or preferably -0.02° to 0.02°.

[0032] According to a further development of the invention, it is provided that the tilt angle of the first trench and / or of the second trench relative to the fictitious target line is -15° to 15°, preferably the tilt angle of the first trench and / or of the second trench relative to the fictitious target line is -10° to 10°, preferably -5° to 5°, preferably -2° to 2°, preferably -1° to 1°, or preferably -0.3° to 0.3°, in particular the value 0° is included here.

[0033] According to a further development of the invention, the at least one transverse trench is designed to be linear, curved, or angled. This ensures that the transverse trench reliably intersects the first trench and the second trench.

[0034] According to a further development of the invention, it is provided that a width of the first trench, the second trench and / or the transverse trench is at least 20 pm and at most 200 pm, preferably at least 30 pm and at most 150 pm, preferably at least 40 pm and at most 120 pm, or preferably at least 50 pm and at most 100 pm.

[0035] According to a development of the invention, it is provided that the absolute value of the tilt angle of the first trench corresponds to the absolute value of the tilt angle of the second trench. The absolute value of the tilt angle is to be understood here in the mathematical sense, according to which the absolute value of a real number is always greater than (or equal to) zero, preferably the absolute value of the tilt angle is a real number always greater than zero. The tilt angle of the first trench is therefore either identical to the tilt angle of the second trench or the two trenches have the same value for the tilt angle, but with a different sign. The first trench and the second trench are therefore arranged either quasi parallel to one another or tilted, i.e. rotated, by twice the tilt angle to one another.

[0036] According to a development of the invention, it is provided that the first trench and the second trench, or the first trench, the second trench and the transverse trench are repeated along the fictitious target line over the entire extent of the layer. Thus, over the entire extent of the layer along the fictitious target line, a second trench follows the first trench and this second trench is followed by a first trench and so on, wherein optionally a transverse trench intersecting the two trenches can be arranged at seams between the first trench and the second trench and / or between the second trench and the first trench, in particular if the first and second trenches do not have a common intersection point.Thus, the sequential juxtaposition of first and second trenches, alternatively in conjunction with the transverse trenches, forms a continuous isolation trench composed of the plurality of trenches, extending across the entire layer, in particular horizontally across the entire layer, wherein the regions of the layer separated by this isolation trench are electrically insulated from one another. This prevents a short circuit between the regions of the layer separated by the isolation trench.

[0037] The electronic component according to the invention can be an optoelectronic component comprising at least one layer, preferably a photovoltaic element, particularly preferably a flexible photovoltaic element, in particular a flexible organic photovoltaic element. The at least one layer can be an electrode layer or a semiconducting layer of a layer system of an optoelectronic component, preferably a photovoltaic element, particularly preferably a flexible photovoltaic element, in particular a flexible organic photovoltaic element.

[0038] An optoelectronic component is understood to mean, in particular, an electronic component having at least one photoactive layer, preferably an organic photoactive layer. A photovoltaic element is understood to mean, in particular, an arrangement comprising a plurality of photovoltaic cells, in particular solar cells. In a preferred embodiment, a plurality of cells of the photovoltaic element are arranged next to one another and connected in series. A photovoltaic element makes it possible to convert electromagnetic radiation, in particular in the wavelength range of visible light, into electrical current by utilizing the photoelectric effect.

[0039] The photovoltaic element has as the at least one semiconducting layer at least one transport layer and / or one photoactive layer, preferably an organic photoactive layer made of organic polymers or small organic molecules with monodisperse molar masses between 100 and 2000 g / mol.

[0040] A flexible optoelectronic component is understood to mean, in particular, an optoelectronic component that is bendable and / or stretchable at least in some areas.

[0041] The object of the present invention is also achieved by providing a method for electrically insulating two regions of a layer of an electronic component formed as an electrode layer or semiconducting layer, comprising the following steps: a) providing a substrate with the layer formed as an electrode layer or semiconducting layer, b) forming a first trench in the layer by means of at least one laser substantially along a fictitious target line, wherein a laser beam of the at least one laser is deflected by means of at least one scanner, c) forming a second trench in the layer by means of the at least one laser substantially along the fictitious target line, wherein the laser beam of the at least one laser is deflected by means of the at least one scanner, wherein a rear end region of the first trench directly intersects a front end region of the second trench,or a transverse trench additionally formed in the layer transversely to the fictitious target line by means of the at least one laser intersects the rear end region of the first trench and the front end region of the second trench, wherein a linear region of the first trench and a linear region of the second trench have a tilt angle relative to the fictitious target line, or the first trench and / or the second trench have at least one non-linear front end region and / or a non-linear rear end region, and d) obtaining a continuous laser structuring along the fictitious target line, wherein the layer has two regions that are electrically insulated from one another.

[0042] According to a further development of the invention, it is provided that the transverse trench is formed before or after step c) in a step c1) transversely to the fictitious target line by means of the at least one laser.

[0043] In a preferred embodiment of the invention, the first trench and the second trench, preferably the first trench, the second trench, and the transverse trench, are formed by means of a laser beam from a laser. The laser beam of one laser can be deflected by means of one or more scanners.

[0044] According to a further development of the invention, it is provided that steps b) and c), preferably steps b), c) and c1), are repeated along the fictitious target line over the entire extent of the layer, wherein the method is preferably used in a roll-to-roll method.

[0045] The method can be used in particular for producing electrically insulated regions in electrode layers and / or semiconducting layers of a flexible photovoltaic module comprising a plurality of photovoltaic cells, preferably connected in series.

[0046] The object of the present invention is also achieved by providing a device for carrying out a method with the features described above. The device has at least one laser generating a laser beam for forming at least one first trench, a second trench and / or a transverse trench in at least one layer of an electronic component, at least one scanner for deflecting the laser beam on a surface of the layer to form an arrangement of the at least first trench, second trench and / or transverse trench relative to one another in the layer, and at least one control device for setting the parameters of the at least one laser and the parameters of the at least one scanner.

[0047] In a preferred embodiment of the invention, an energy or a power density of the at least one laser is reduced at the end regions of the trenches by means of a control device for adjusting the parameters of the at least one laser. The energy or a power density of the at least one laser can be reduced continuously as a function of the distance to the end point of the trench or gradually upon reaching the end region of the trench.

[0048] The device preferably comprises two lasers whose laser beams are each split into two beam paths. The device has a scanner for each of the beam paths, whereby a total of four scanning fields on the surface of the layer can be processed independently of one another. The at least one scanner of the device can comprise one or two galvanometer mirrors, i.e. mirrors moved by a galvanometer drive. Lasers with a wavelength in the range from 510 nm to 532 nm and / or 1020 nm to 1064 nm are preferably used. In addition, non-linear optical elements can be provided which allow a frequency doubling or tripling of the laser radiation of the at least one laser.

[0049] The control device for setting the parameters of the at least one laser and the parameters of the at least one scanner is in particular designed to move, preferably deflect, the laser beam of the at least one laser at a speed in the range between 1 m / s to 20 m / s over the surface of the at least one layer of the electronic component.

[0050] The device can further comprise at least one lens or focusing unit for the laser beam of the at least one laser, wherein by means of the at least one lens or focusing unit the laser beam can be focused onto the surface of the at least one layer of the electronic component to form a laser spot, preferably with a diameter in the range of 50 to 100 pm.

[0051] The invention is explained in more detail below with reference to the drawings, in which identical or similar features are provided with the same reference numerals. In the drawings:

[0052] Fig. 1 is a schematic representation of an embodiment of an electronic component with a layer system in an oblique plan view; and

[0053] Fig. 2 to 11 each show a schematic representation of an embodiment of an arrangement of trenches in a layer of an electronic component in a plan view.

[0054] Examples of implementation

[0055] Fig. 1 shows a schematic representation of an embodiment of an electronic component 100 with a layer system in an oblique plan view. The embodiment shown here is, in particular, an optoelectronic component 100 manufactured using a roll-to-roll process.

[0056] The electronic component 100 has a first layer 115 on a substrate 110, for example, an electrode layer or a layer of a layer system arranged between two electrodes, for example, a transport layer, an injection layer, or a photoactive layer. Arranged thereon is a layer 120 with two regions 120.1 and 120.2 that are continuously electrically insulated from one another, for example, an electrode layer or a semiconducting layer.

[0057] In this exemplary embodiment, layer 115 is an electrode layer, and layer 120, which is divided into the two regions 120.1 and 120.2, is a semiconducting layer. A trench 101 is formed in layer 120, electrically isolating layer 120 into the two regions 120.1 and 120.2. Trench 101 was formed in layer 120 along the fictitious target line 200 using a pulsed laser whose pulsed laser beam with a pulse duration of less than 10 ps was deflected by a scanner, here using a laser scanner with a galvanometer drive.

[0058] Fig. 1 shows only a first trench 101 for separating layer 120 into regions 120.1 and 120.2. Due to the spatially limited working range of the laser and / or scanner, with an extended layer 120, it is necessary to place several trenches one behind the other along the fictitious target line 200 (see Figs. 2 to 11). For reliable electrical insulation of the two regions 120.1 and 120.2 from one another, the trenches in layer 120 must overlap at the seams, i.e., intersect, or be "connected" to one another by means of a third transverse trench formed transversely to the fictitious target line, wherein the transverse trench intersects end regions of adjacent trenches. Furthermore, for reliable electrical insulation of the two regions 120.1 and 120.2 from one another, the trenches must be formed completely through layer 120. Fig.2 to 11 each show a schematic representation of an embodiment of an arrangement of trenches 101, 102 and / or 104 in a layer 120 of an electronic component 100 in a plan view.

[0059] Fig. 2 shows, in one embodiment, two first trenches 101 and a second trench 102 arranged between the two first trenches 101. The trenches 101 and 102 are arranged substantially along the fictitious target line 200. In addition, the trenches 101 and 102 are rotated by a tilt angle with respect to the fictitious target line 200. In this example, the tilt angle is 5° for each of the first trench 101 and the second trench 102. The tilt angle of 5° in each case was chosen to better illustrate the rotation of the first trench 101 and the second trench 102 relative to the fictitious target line 200. For an electronic component 100, a tilt angle of a maximum of 1° would preferably be selected.

[0060] Due to the alignment of the first trench 101 and the second trench 102 rotated by the tilt angle relative to the fictitious target line 200, the rear end regions 101.2 of the first trenches 101 and the front end regions 102.1 of the second trenches 102 do not lie on one another. Between the rear end region 101.2 of the first trench 101 and the front end region 102.1 of the second trench 102 there is a gap in the trench system, which is bridged, i.e. closed, by the linear transverse trench 104 additionally arranged transversely to the fictitious target line 200. The transverse trench 104 intersects the first trench 101 at its rear end region 101. 2 and the second trench 102 at its front end region 102 . 1 . A further transverse trench 104 intersects the second trench 102 at its rear end region 102 . 2 and the trench 101 arranged below it in Fig. 2 at its front end region 101 . 1 .All trenches 101 , 102 and 104 are linear .

[0061] In Fig. 3, in one embodiment, an arrangement of trenches 101 and 102 in a layer 120 of an electronic component 100 is shown in plan view. In this embodiment, the trenches 101 and 102 are also rotated by a tilt angle relative to the fictitious target line 200. In this example, the first trench 101 is rotated clockwise (the tilt angle is positive), and the second trench 102 is rotated counterclockwise (the tilt angle is negative). This creates a trench arrangement in a zigzag pattern. The rear end region 101.2 of the first trench 101 intersects the front end region 102.1 of the second trench 102, and the rear end region 102.2 of the second trench 102 intersects the front end region 101.1 of the first trench 101. This arrangement of the trenches 101 and 102 forms a continuous isolation trench along the fictitious target line 200.In this example, the trenches 101 and 102 are also completely linear.

[0062] Fig. 4 shows an embodiment of an arrangement with trenches 101 and 102 that are not completely linear. The end regions 101.1 and 101.2 of the first trench 101 and the end regions 102.1 and 102.2 of the second trench 102 are non-linear, in particular angled. The trenches 101 and 102 each intersect at the angled end regions 101.1, 101.2, 102.1, 102.2, the rear end region 101.2 of a first trench 101 with the front end region 102.1 of a second trench 102, and the rear end region 102.2 of a second trench 102 with the front end region 101.1 of a first trench 101, although the trenches 101 and 102 do not lie exactly on the fictitious target line 200 due to technical deficiencies. The linear center regions of the trenches 101 and 102 are each aligned parallel to the fictitious target line 200, i.e., the tilt angle here is 0°.

[0063] Fig. 5 shows a further embodiment in which the trenches 101 and 102 are not completely linear. The end regions 101.1 and 101.2 of the first trench 101 and the end regions 102.1 and 102.2 of the second trench 102 are nonlinear, in particular curved. Due to the curved end regions 101.1, 101.2 and 102.1, 102.2, the trenches 101 and 102 intersect at their end regions 101.2 and 102.1, or 102.2 and 101.1, respectively, although the trenches 101 and 102—again for technical reasons—do not lie exactly on the fictitious target line 200. The linear central regions of the trenches 101 and 102 are each aligned parallel to the fictitious target line 200, ie the tilt angle is zero in each case.

[0064] Fig. 6 shows, in one exemplary embodiment, a series of first trenches 101 and second trenches 102 running along the notional target line 200, wherein the first trenches 101 and the second trenches 102 are formed in a completely non-linear manner. In this exemplary embodiment, both the first trenches 101 and the second trenches 102 are arcuate. The first trenches 101 and the second trenches 102 each intersect at their end regions, thereby forming a continuous isolation trench running along the notional target line 200. The first trench 101 and the second trench 102 are aligned "parallel" to one another, i.e., they have the same tilt angle—here 0°.

[0065] Fig. 7 essentially corresponds to the embodiment of Fig. 2, wherein in Fig. 7 the transverse trenches 104 are non-linear but arcuate. The first trench 101 and the second trench 102 have the same tilt angle relative to the fictitious target line 200 and are completely linear.

[0066] Fig. 8 shows, in one exemplary embodiment, non-linearly formed first trenches 101 and non-linearly formed second trenches 102. The trenches 101, 102 have the shape of a serpentine line, wherein the shape of the first trenches 101 is mirrored to that of the second trenches 102. Due to this shape and arrangement, a first trench 101 and a second trench 102 each intersect at their (non-linear) end regions 101.1, 101.2 and 102.1, 102.2. The end points (i.e. start and end points) of the first trenches 101 and the second trenches 102 lie essentially on the fictitious target line 200, as a result of which the tilt angle of each of the first trench 101 and the second trench 102 is 0°. Fig. 9 shows a further embodiment in which the first trench 101 is non-linear in its end regions 101.1 and 101.2, while the second trench 102 is completely linear, in particular also in its two end regions 102.1 and 102.2.The non-linear—in this example, angled—end regions 101.1 and 101.2 intersect the trench 102 arranged in front of and behind the first trench 101, respectively. To ensure an intersection point between the front end region 101.1 of the first trench 101 and the second trench 102, and between the rear end region 101.2 of the first trench 101 and the second trench 102, the first trench 101 and / or the second trench 102 are arranged laterally offset—in this embodiment by 15 micrometers—relative to the fictitious target line 200. Furthermore, the first trench 101 and the second trench 102 each have a tilt angle of 0°.

[0067] Fig. 10 shows an embodiment which is similar to that of Fig. 9, wherein according to Fig. 10 the first trench 101 has an arcuate front end region 101.1 and an arcuate rear end region 101.2.

[0068] Fig. 11 shows an embodiment in which the first trench 101 is completely non-linear, while the second trench 102 is completely linear. The first trench 101 and the second trench 102 intersect at their respective end regions 101.2 and 102.1 and 102.2 and 101.1. Here, too, the tilt angle of the first trench 101 and the second trench 102 is 0°.

Claims

Patent claims 1. An electronic component (100) comprising a substrate (110) having at least one layer (120) in the form of an electrode layer or a semiconducting layer, wherein the at least one layer (120) is structured, in particular laser-structured, with at least one first trench (101) and one second trench (102) along a fictitious target line (200), characterized in that a rear end region (101.2) of the first trench (101) directly intersects a front end region (102.1) of the second trench (102), or a transverse trench (104) additionally arranged transversely to the fictitious target line (200) intersects the rear end region (101.2) of the first trench (101) and the front end region (102.1) of the second trench (102), wherein a linear region of the first trench (101) and a linear region of the second trench (102) each have a tilt angle relative to the fictitious target line (200), or the first trench (101) and / or the second trench (102) have at least one non-linear front end region (101.1, 102.1) and / or a non-linear rear end region (101.2, 102.2), and wherein the at least one layer (120) has two regions (120.1, 120.2) that are continuously electrically insulated from one another.

2. Electronic component (100) according to claim 1, wherein the rear end region (101.2) of the first trench (101) directly intersects the front end region (102.1) of the second trench (102), wherein the first trench (101) and the second trench (102) with their linear regions have the same tilt angle relative to the fictitious target line (200), and have a non-linear front end region (101.1, 102.1) and / or a non-linear rear end region (101.2, 102.2).

3. Electronic component (100) according to claim 1, wherein the rear end region (101.2) of the first trench (101) directly intersects the front end region (102.1) of the second trench (102), wherein the first trench (101) has a tilt angle relative to the fictitious target line (200) different from the tilt angle of the second trench (102) relative to the fictitious target line (200).

4. Electronic component (100) according to claim 1, wherein the transverse trench (104) additionally arranged transversely to the fictitious target line intersects the rear end region (101.2) of the first trench (101) and the front end region (102.1) of the second trench (102), wherein the linear regions of the first trench (101) and the second trench (102) have the same tilt angle relative to the fictitious target line (200), and wherein the first trench (101) and / or the second trench (102) have a non-linear front end region (101.1, 102.1) and / or a non-linear rear end region (101.2, 102.2).

5. Electronic component (100) according to claim 1, wherein the first trench (101) and / or the second trench (102) have a non-linear front end region (101.1, 102.1) and / or a non-linear rear end region (101.2, 102.2) and a linear region between the front end region (101.1, 102.2) and the rear end region (101.2, 102.2), wherein the non-linear front end region (101.1, 102.1) and / or the non-linear rear end region (101.2, 102.2) of the first trench (101) and / or second trench (102) is angled or arcuate relative to the respective linear region.

6. Electronic component (100) according to one of the preceding claims, wherein the tilt angle of the first trench (101) and / or the second trench (102) relative to the fictitious target line (200) is -15° to 15°.

7. Electronic component (100) according to one of the preceding claims, wherein the transverse trench (104) is linear, arcuate or angled.

8. Electronic component (100) according to one of the preceding claims, wherein a width of the first trench (101), the second trench (102) and / or the transverse trench (104) is 50 pm to 100 pm.

9. Electronic component (100) according to one of the preceding claims, wherein the absolute value of the tilt angle of the first trench (101) corresponds to the absolute value of the tilt angle of the second trench (102).

10. Electronic component (100) according to one of the preceding claims, wherein the first trench (101) and the second trench (102), or the first trench (101), the second trench (102) and the transverse trench (104) are repeated along the fictitious target line (200) over the entire extent of the layer (120).

11. Electronic component (100) according to one of the preceding claims, wherein the at least one layer (120) is an electrode layer or a semiconducting layer of a layer system of an optoelectronic component, preferably a photovoltaic element, particularly preferably a flexible photovoltaic element.

12. A method for electrically insulating two regions (120.1, 120.2) of a layer (120) of an electronic component (100) formed as an electrode layer or semiconducting layer, preferably an electronic component (100) according to one of claims 1 to 11, comprising the following steps: a) providing a substrate (110) with the layer (120), b) forming a first trench (101) in the layer (120) by means of at least one laser substantially along a fictitious target line (200), wherein a laser beam of the at least one laser is deflected by means of at least one scanner, c) forming a second trench (102) in the layer (120) by means of the at least one laser substantially along the fictitious target line (200), wherein the laser beam of the at least one laser is deflected by means of the at least one scanner, wherein a rear end region (101.2) of the first trench (101) has a front end region (102.1) of the second trench (102) directly intersects, or. a transverse trench additionally formed in the layer (120) transversely to the fictitious target line (200) by means of the at least one laser (104) intersects the rear end region (101.2) of the first trench (101) and the front end region (102.1) of the second trench (102), wherein a linear region of the first trench (101) and a linear region of the second trench (102) have a tilt angle relative to the fictitious target line (200), or the first trench (101) and / or the second trench (102) have at least one non-linear front end region (101.1, 102.1) and / or a non-linear rear end region (101.2, 102.2), and d) obtaining a continuous laser structuring along the fictitious target line (200), wherein the layer (120) has two regions (120.1, 120.2) that are electrically insulated from one another.

13. The method according to claim 12, wherein the transverse trench (104) is formed before or after step c) in a step c1) transversely to the fictitious target line (200) by means of the at least one laser.

14. The method according to claim 12 or 13, wherein steps b) and c), or steps b), c) and c1), are repeated along the fictitious target line (200) over the entire extent of the layer (120), wherein the method is preferably used in a roll-to-roll process.

15. Device for carrying out a method according to one of claims 12 to 14, comprising at least one laser generating a laser beam for forming at least one first trench (101), a second trench (102) and / or a transverse trench (104) in at least one layer (120) of an electronic component (100), at least one scanner for deflecting the laser beam on a surface of the layer (120) to form an arrangement of the at least first trench (101), second trench (102) and / or transverse trench (104) relative to one another in the layer (120), and at least one control device for setting the parameters of the at least one laser and the parameters of the at least one Scanners .

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