Ion trap, ion trap system and quantum computing arrangement
Patent Information
- Authority / Receiving Office
- EP · EP
- Patent Type
- Applications
- Current Assignee / Owner
- ELEQTRON GMBH
- Filing Date
- 2024-07-04
- Publication Date
- 2026-05-13
AI Technical Summary
Conventional ion traps lack optical access and controllability, which are essential for performing quantum computing processes with trapped ions effectively.
The ion trap design incorporates blade electrodes with time-varying and static electric fields, through-holes in end cap electrodes for optical access, and soft magnetic materials to enhance the external magnetic field, allowing for improved confinement and control of ions along the trapping axis.
This design enhances optical access for laser cooling and magnetic field gradients, enabling precise control and manipulation of ions for efficient quantum computing processes.
Smart Images
Figure EP2024068796_09012025_PF_FP_ABST
Abstract
Description
[0001] ION TRAP, ION TRAP SYSTEM AND QUANTUM COMPUTING ARRANGEMENT
[0002] The present disclosure relates to an ion trap, an ion trap system and a quantum computing arrangement .
[0003] Typically, end cap electrodes of a conventional ion trap are of a bulk material and do not provide any optical access along a trapping axis .
[0004] Furthermore , in order to perform quantum computing processes using trapped ions , the trapped ions have to be controllable and addressable individually from one another .
[0005] An obj ect to be solved is to provide an ion trap, which has an improved optical access as well as an improved controllability . Furthermore , an ion trap system and a quantum computing arrangement comprising such an ion trap are to be provided .
[0006] The obj ect is solved by the subj ect matter of the independent claims . Advantageous embodiments , implementations and further developments are the subj ect matter of the respective dependent claims .
[0007] According to at least one embodiment , the ion trap comprises at least two first electrodes configured to provide a timevarying electric field . In particular, the first electrodes are spaced apart from one another . Exemplarily, each of the first electrodes extends along a main extension direction . The main extension directions of the first electrodes are parallel to one another . The first electrodes are , in particular, first blade electrodes of the ion trap . Each first blade electrode extends within a main extension plane along the corresponding main extension direction . For example , each first blade electrode has a cross sectional view along its main extension plane being rectangular or trapezoidal . In particular, each first blade electrode has an edge , wherein the edges of the first electrodes face one another and / or are arranged directly opposite to one another .
[0008] Additionally, the ion trap comprises at least two further first electrodes configured to provide a static electric field . In particular, the further first electrodes are spaced apart from one another and are spaced apart from the first electrodes . Exemplarily, each of the further first electrodes extends along a main extension direction . The main extension directions of the further first electrodes and the further first electrodes are parallel to one another .
[0009] The further first electrodes are , in particular, further first blade electrodes of the ion trap . Each further first blade electrode extends within a main extension plane along the corresponding main extension direction . For example , each further first blade electrode has a cross sectional view along its main extension plane being rectangular or trapezoidal . In particular, each further first blade electrode has an edge , wherein the edges of the further first electrodes face one another and / or are arranged directly opposite to one another .
[0010] The main extension planes of the first electrodes and the further first electrodes , being in particular blade electrodes , cross one another in a region of the trapping axis of the ion trap .
[0011] The first electrodes and / or the further first electrodes are formed of an electrically conductive material .
[0012] According to at least one embodiment , the ion trap comprises at least two second electrodes configured to provide a static electric field . In particular, the second electrodes are spaced apart from one another and / or from the first electrodes and / or the further first electrodes .
[0013] For example , the second electrodes are end cap electrodes of the ion trap . In particular, the ion trap is a Paul trap .
[0014] According to at least one embodiment of the ion trap, at least one of the second electrodes comprises a through hole . In particular, the through hole completely penetrates the at least one second electrode .
[0015] According to at least one embodiment of the ion trap, the second electrodes each comprise a soft magnetic material configured to enhance an external magnetic field . For example , the soft magnetic material has a relative permeability being at least 1 . 05 . Exemplarily, the soft magnetic material is magneti zed only once when assembling, in contrast to , for example , a typical yoke in a trans former . Such a soft magnetic material is configured to be magnetised in the external magnetic field particularly well , leading to a magnetic polarisation of the soft magnetic material .
[0016] The magnetic polarisation of the soft magnetic material is achieved by the external magnetic field . The magnetic polarisation of the soft magnetic material provides a magnetic field component to the external magnetic field in a region of the soft magnetic material which is bigger than a component of the external magnetic field itsel f in the region of the soft magnetic material . Thus , the soft magnetic material enhances the external magnetic field, in particular in the region of the soft magnetic material .
[0017] It is an idea, inter alia, to form a through hole within at least one of the second electrodes in order to provide an optical access to the trapping axis of the ion trap . Advantageously, due to the axial optical access laser cooling can be improved . Further, by using a soft magnetic material , the external magnetic field is enhanced in the region of the soft magnetic material and thus a magnetic field gradient along the trapping axis can be enhanced in comparison to the sole use of the external magnetic field .
[0018] According to at least one embodiment of the ion trap, each of the second electrodes comprise a through hole . In particular, each through hole completely penetrates the corresponding electrode .
[0019] According to at least one embodiment of the ion trap, the time-varying electric field and the static electric field are configured to confine at least one ion, in particular at least two ions , along a first axis . In particular, the timevarying electric field of the first electrodes , the static electric field of the further first electrodes and the static electric field of the second electrodes are configured to confine the ion along the trapping axis . For example , the ion, in particular each of the ions , intersects with the trapping axis and / or oscillates around the trapping axis . Exemplarily, the ions are arranged in an ion chain along the trapping axis.
[0020] Exemplarily, the ion trap is configured to confine, i.e. trap, two or more, e.g. at least 8 or at least 20 or at least 100 and or at most 1000, ions along the trapping axis.
[0021] According to at least one embodiment of the ion trap, the soft magnetic material is a ferromagnetic material configured to be magnetised by the external magnetic field. Exemplarily, the soft magnetic material comprises Iron, Cobalt and Vanadium. For example, the soft magnetic material further comprises at least one of the following materials: manganese, niobium, silicon, carbon. For example, a concentration of iron and cobalt is bigger than a concentration of vanadium. For example, the concentration of iron and cobalt is at least 90 % with respect to the soft magnetic material. The concentration of vanadium is at least 0.5 % with respect to the soft magnetic material.
[0022] Exemplarily, the soft magnetic material has a relative magnetic permeability of at least 300, in particular at least 1000, e.g. at least 10000 and at most 20000, in particular at least 11000 and at most 15000. For example, the relative magnetic permeability of the soft magnetic material is about 12000. Further, the soft magnetic material has, exemplarily, a saturation flux density of at least 1 T, e.g. at least 1.5 T and at most 5 T, in particular at least 2 T and at most 3 T .
[0023] Advantageously, with such a soft magnetic material a change of magnitudes of the external magnetic field along the trapping axis is at least one or two orders of magnitudes higher in regions near the second electrodes .
[0024] According to at least one embodiment of the ion trap, the through hole has a main extension direction, and the main extension direction is parallel to the trapping axis . In particular, the main extension direction of the through hole is defined between two opposite openings of the second electrode delimiting the through hole .
[0025] The through hole has , for example , a cross sectional shape in a plane perpendicular to the main extension direction being circular, elliptical or polygonal , such as triangular or rectangular .
[0026] According to at least one embodiment of the ion trap, the main extension direction is inclined to the trapping axis by at most 15 ° . In particular, the main extension direction is inclined to the trapping axis by at most 10 ° or at most 5 ° and / or at least 1 ° or at least 5 ° . Advantageously, with such an angle , an optical access to the trapping axis can still be ensured .
[0027] According to at least one embodiment of the ion trap, each of the second electrodes has a main extension direction parallel to the trapping axis .
[0028] According to at least one embodiment of the ion trap, each of the second electrodes has a shape tapering towards the other second electrode . Advantageously, with such tapered second electrodes , the ions along the trapping axis can be confined particularly precise . According to at least one embodiment of the ion trap, each of the second electrodes comprises a first part and a second part , wherein the first part has the shape of a rotation body, in particular a cylinder or a polygonal prism, and the second part has the shape of a tapered rotation body, in particular a truncated cone . The first part and the second part comprise in particular both the through hole . This is that the rotation body is a hollow rotation body and the tapered rotation body is a hollow tapered rotation body . Exemplarily, the second parts face one another and / or are arranged directly opposite to one another .
[0029] Alternatively, the first part has the shape of a paraboloid, a hyperboloid, or semi-sphere .
[0030] In particular, the first part and the second part of the same second electrode are formed integrally with one another .
[0031] Furthermore , an ion trap system is speci fied, wherein the ion trap system comprises the ion trap as described herein above . This is to say that the features concerning the ion trap system are also applicable for the ion trap and vice versa .
[0032] According to at least one embodiment , the ion trap system comprises a laser device , wherein laser light of the laser device is provided through the through hole . As the laser light is provided through the through hole to a region close to the trapping axis or on the trapping axis , the laser light has a predetermined spatial overlap with the ions on the trapping axis , in particular with at least some states of at least some ions . Thus , the laser light can advantageously interact with the ions in particular ef fectively . This is that that a signi ficant fraction of the laser light is absorbed by the ions , leading to an ef ficient cooling of the ions at the trapping axis .
[0033] Furthermore , a quantum computing arrangement is speci fied, wherein the quantum computing arrangement comprises the ion trap system as described herein above . This is to say that the features concerning the quantum computing arrangement are also applicable for the ion trap system and vice versa .
[0034] According to at least one embodiment , the quantum computing arrangement comprises a permanent magnet arrangement configured to establish the external magnetic field . In particular, the external magnetic field has magnitudes being di f ferent from one another for di f ferent positions on the trapping axis . Thus , the magnitudes of the magnetic field for di f ferent positions on the trapping axis are characteristic for a magnetic field gradient along the trapping axis . Advantageously, a resonance frequency of each of the ions at the trapping axis , on which the magnetic field gradient acts , is unique for each trapped ion due to the magnetic field gradient .
[0035] The quantum computing arrangement can be used within a quantum computer being configured to perform quantum computing processes by using the quantum computing arrangement . The ions at the trapping axis of the quantum computing arrangement can be controlled and manipulated particularly well with the ion trap described herein above , in order to perform predetermined quantum calculations .
[0036] In the following, the ion trap, the ion trap system and the quantum computing arrangement are explained in more detail with reference to exemplary embodiments and the associated Figures .
[0037] Figure 1 shows a schematic view of the ion trap according to an exemplary embodiment and Figure 2 shows a schematic view of the ion trap system and the quantum computing arrangement according to an exemplary embodiment .
[0038] Elements that are identical , similar or have the same ef fect are given the same reference signs in the Figures . The Figures and the proportions of the elements shown in the figures are not to be regarded as true to scale . Rather, individual elements may be shown exaggeratedly large for better representability and / or for better comprehensibility .
[0039] The ion trap 1 according to the exemplary embodiment of Figure 1 comprises two first electrodes 2 and two further first electrodes 3 , each of them extending along a main extension direction within a main extension plane . The main extension planes cross one another forming a trapping axis 6 . The first electrodes 2 and the further first electrodes 3 are configured to provide a radial confinement of ions to be trapped in a region along the trapping axis 6 .
[0040] The ion trap 1 further comprises second electrodes 4 configured to provide an axial confinement of the ions to be trapped along the trapping axis 6 . The second electrodes 4 each comprises a soft magnetic material configured to enhance an external magnetic field .
[0041] Each of the second electrodes 4 comprises a through hole 5 . Each of the through holes 5 penetrate the second electrodes 4 completely . The through holes 5 have a common main extension direction along the trapping axis 6 .
[0042] Each second electrode 4 comprises a first part 7 and a second part 8 . The first part 7 has the shape of a hollow cylinder and the second part 8 has the shape of a hollow truncated cone . A tapered part of the hollow truncated cone of one of the second electrodes 4 faces a tapered part of the hollow truncated cone of the other one of the second electrodes 4 .
[0043] The quantum computing arrangement 12 according to the exemplary embodiment of Figure 2 comprises an ion trap system 11 with an ion trap 1 according to the exemplary embodiment according to Figure 1 and a laser device 9 . The laser device 9 is configured to provide laser light of the laser device 9 through at least one of the through holes 5 .
[0044] The quantum computing arrangement 12 further comprises a permanent magnet arrangement 10 configured to establish the external magnetic field, in particular a magnetic field gradient , along the trapping axis 6 . The second electrodes 4 form a yoke structure , enhancing the external magnetic field, in particular the magnetic field gradient along the trapping axis 6 .
[0045] Reference signs
[0046] 1 ion trap
[0047] 2 first electrode
[0048] 3 further first electrode
[0049] 4 second electrode
[0050] 5 through hole
[0051] 6 trapping axis
[0052] 7 first part
[0053] 8 second part
[0054] 9 laser device
[0055] 10 permanent magnet arrangement
[0056] 11 ion trap system
[0057] 12 quantum computing arrangement
Claims
Claims1. Ion trap (1) configured to perform quantum computing processes, with- at least two first electrodes (2) configured to provide a time-varying electric field, and- at least two second electrodes (4) configured to provide a static electric field, wherein- at least one of the second electrodes (4) comprises a through hole (5) , and- the second electrodes (4) each comprise a soft magnetic material configured to enhance an external magnetic field.
2. Ion trap (1) according to claim 1, wherein- each of the second electrodes (4) comprise a through hole (5) .
3. Ion trap (1) according to one of the claims 1 or 2, wherein- the time-varying electric field and the static electric field are configured to confine at least one ion along a trapping axis (6) .
4. Ion trap (1) according to one of the claims 1 to 3, wherein- the soft magnetic material is a ferromagnetic material configured to be magnetised by the external magnetic field.
5. Ion trap (1) according to claim 4, wherein- the through hole (5) has a main extension direction, and- the main extension direction is parallel to the trapping axis ( 6 ) , or- the main extension direction is inclined to the trapping axis (6) by at most 15°.
6. Ion trap (1) according to one of the claims 1 to 5, wherein- each of the second electrodes (4) has a main extension direction parallel to the trapping axis (6) .
7. Ion trap (1) according to one of the claims 1 to 5, wherein- each of the second electrodes (4) has a shape tapering towards the other second electrode (4) .
8. Ion trap (1) according to one of the claims 1 to 7, wherein- each of the second electrodes (4) comprises a first part(7) and a second part (8) , wherein- the first part (7) has the shape of a rotation body , and- the second part (8) has the shape of a tapered rotation body .
9. Ion trap system (11) , comprising- the ion trap according to one of claims 1 to 8, and- a laser device (9) , wherein- laser light of the laser device (9) is provided through the through hole (5) .
10. Quantum computing arrangement (12) , comprising- the ion trap system (11) according to claim 9, and- a permanent magnet arrangement (10) configured to establish the external magnetic field.